CN202905773U - Package structure with fluorescent wafer used on large-power white-light LED - Google Patents
Package structure with fluorescent wafer used on large-power white-light LED Download PDFInfo
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- CN202905773U CN202905773U CN 201220474882 CN201220474882U CN202905773U CN 202905773 U CN202905773 U CN 202905773U CN 201220474882 CN201220474882 CN 201220474882 CN 201220474882 U CN201220474882 U CN 201220474882U CN 202905773 U CN202905773 U CN 202905773U
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Abstract
The utility model discloses a package structure with a fluorescent wafer used on a large-power white-light LED. The package structure comprises the following components: a reflection bracket which has a cup-shaped structure, an LED chip, the fluorescent wafer and a lens. The LED chip is equipped at a preset wafer fixing position on a bottom substrate of the reflection bracket. The fluorescent wafer is equipped at the inside part of the cup edge of the reflection bracket. The lens is bucked on the top of the reflection bracket. The package structure provided by the utility model has the following advantages: improved stability of the large-power white-light LED device, prolonged service life of the LED device, simple manufacturing process and high suitability for large-scale industrial production.
Description
Technical field
The utility model relates to a kind of encapsulating structure of large power white light LED, particularly the fluorescence wafer is used for the encapsulating structure of large power white light LED, belongs to lighting technical field.
Background technology
Light-emitting diode (Light Emitting Diode) light source is as a kind of novel green lighting source, and the characteristics such as, long-life pollution-free with it, low-loss, photochromic pure, vibration resistance are widely used in the world.Since the nineties, the white light LEDs new industry has become the new lover of illuminating industry, emerges rapidly and high speed development.
At present, commercialization white light LEDs product produces white light as Developing mainstream take blue chip and phosphor combination.It is that the InGaN/GaN base blue-ray LED of 460～470nm excites Y as basic light source that the manufacture method of white light LEDs is normally utilized wavelength
3Al
5O
12: Ce (YAG:Ce) fluorescent material, the gold-tinted that sends after fluorescent material is stimulated forms white light with the residue blue light.The white light LEDs that adopts this method to obtain, because the fluorescent powder packaging material is close to the chip pyrotoxin, chip temperature raises and causes the fluorescent material performance degradation, and the heat that the while chip distributes and shortwave radiation can make the encapsulating material accelerated ageing cause transmitance to descend, white light LEDs shortening in useful life.In addition, because the inconsistent problem of white light quality between the different white light LED parts appears in the inhomogeneities that fluorescent material distributes in colloid.Although there is being certain progress present stage aspect uniformity, stability, aging and the device heat dispersion of fluorescent powder packaging improving, but still can not satisfy the growth requirement of high light efficiency, high color rendering index (CRI), the illumination of long-life large power white light LED.
Yttrium-aluminum garnet single crystal compare fluorescent material have excitation-emission efficient high, be subjected to the advantages such as thermally-stabilised, that thermal conductivity is high, mechanical strength is good, be suitable as very much the substitution material of conventional fluorescent powder.Existing scholar attempts preparing white light LEDs with fluorescent materials such as monocrystalline: the Guan Rongfeng of Institutes Of Technology Of He'nan etc. utilizes doped Ce: the glass of YAG fluorescent material has carried out the LED encapsulation, and (" being used for the development of the doped Ce of white light LEDs-YAG fluorescent glass " is published in electronic component and material, 26 (12), 2007); Chinese patent CN1815765A(denomination of invention: a kind of YAG chip-type white-light light-emitting-diode and method for packing thereof, open day on 08 09th, 2006) adopt transparent silica gel or resin and Mold for Plastics to encapsulate a kind of YAG chip-type white-light light-emitting-diode; Patent CN101894900A(denomination of invention: a kind of manufacture method that monocrystal is used for white light LEDs, open day on November 24th, 2010) narrated a kind of manufacture method that cerium-doped yttrium aluminum garnet monocrystal is used for white light LEDs, monocrystal is close to luminescence chip in the method, and chip temperature raises and causes the wafer combination property to descend during normal operation.Existing published method for packing all is to be near the 530nm cerium-doped yttrium aluminum garnet material and the direct spiral-lock of chip with emission dominant wavelength, with compare obvious shortage ruddiness composition with the white light LEDs of yellow fluorescent powder and red fluorescence powder combining form encapsulation, colour temperature higher and the colour developing scarce capacity, limited application and the development of wafer package white light LEDs in the normal lighting field.Open source literature does not relate to encapsulating structure and the method for yttrium-aluminum garnet single crystal sheet about the preparation large power white light LED at present.
Summary of the invention
Technical problem to be solved in the utility model provides a kind of encapsulating structure that the fluorescence wafer is used for large power white light LED, improves the stability of large power white light LED part, prolongs LED device useful life.
The below does the technical solution of the utility model and specifies.
Of the present utility modelly provide a kind of encapsulating structure that the fluorescence wafer is used for large power white light LED, described encapsulating structure comprises reflective support, led chip, fluorescence wafer and the lens that are bowl cup-like structure, described led chip is arranged on the die bond position that the bottom substrate of described reflective support presets, described fluorescence wafer rack is located at the cup of described reflective support along inboard, and described lens are buckled in the top of described reflective support.
Further, the bottom outside of described reflective support is provided with radiating subassembly, with the heat dispersion of raising large power white light LED part, thereby further provides its stability.
Further, the material of reflective support is conductive metal, and its inboard is mirror surface.
Further, the material of reflective support is copper or steel.
In the utility model, described fluorescence wafer is the fluorescent materials such as rare-earth-dopping yttrium aluminum garnet monocrystalline, can blue-light excited lower, send the light of one or more wave bands.Thickness is 0.2 ~ 2mm, and the surface is through the single or double polishing, and is perhaps two-sided all without polishing.
Further, the quantity of described fluorescence wafer is at least one; When the quantity of fluorescence wafer during more than 1, each fluorescence wafer superposes up and down and is erected at the top of reflective support.Therefore, the utility model can obtain the light of various different colours to reach the purpose of tuning white light LEDs optical property by the fluorescence wafer of combination varying number, different-thickness, different luminous wave bands, realize the raising of the controlled of light source color temperature and colour developing ability, satisfy real life environments to the requirement of light source.
Further, the seamless contact between the edge of described fluorescence wafer and the reflective support namely need not to introduce silica gel or resin, and Waffer edge directly contacts with reflective support, utilizes the thermal conductance of wafer excellence to improve the heat dispersion of device.
In the utility model, led chip is blue-light LED chip.
Further, the quantity of described led chip is at least one, and chip is placed on the die bond position that reflective frame bottom substrate presets.
Further, described optical lens is preferably the optical grade polymethyl methacrylate.
The utility model also provides a kind of method for packing that the fluorescence wafer is used for the encapsulating structure of large power white light LED, and described method for packing may further comprise the steps:
(1) mode by die bond is fixed on the die bond position that the bowl cup-like structure bottom substrate of reflective support is reserved with led chip, then carries out bonding wire;
(2) cup that the fluorescence wafer rack is located at the reservation of reflective support top is fixed along inner side;
(3) buckle lens at reflective support.
Further, described method for packing also comprises the steps: to add radiating subassembly in reflective frame bottom.
Have following advantage behind the utility model employing aforementioned structure and the method for packing:
(1) substitutes the technical scheme of fluorescent material with the fluorescence wafer, have the series of advantages such as excitation-emission efficient is high, physical and chemical performance stable, high homogeneity, thermal conductivity is high, aftertreatment technology is simple, can realize LED without silica gel or resin-encapsulated, overcome the poor stability of fluorescent powder packaging, the easy problem such as aging.
(2) the far field excitation mode that adopts fluorescent material and chip to separate in conjunction with the bowl reflective support of cup-shaped and optical lens design, effectively promotes the light extraction efficiency of white light LEDs, improves heat dispersion, improves the quality of products and the life-span.
(3) encapsulating structure of the present utility model, the use capable of being combined of multi-disc fluorescence wafer, therefore, can obtain the light of various different colours to reach the purpose of tuning white light LEDs optical property by the fluorescence wafer of combination varying number, different-thickness, different luminous wave bands, realize the raising of the controlled of light source color temperature and colour developing ability, satisfy real life environments to the requirement of light source.
(4) this large power white light LED encapsulating structure is simple, and its manufacture craft is simple and easy, is fit to large-scale industrial production.
Description of drawings
Accompanying drawing 1 is the structural representation of the utility model embodiment 1;
Accompanying drawing 2 is the structural representation of the utility model embodiment 2;
Plan structure schematic diagram when accompanying drawing 3 is one for led chip;
Accompanying drawing 4 is the plan structure schematic diagram when forming the led chip group by six led chips.
Embodiment
The utility model is described in further detail below in conjunction with drawings and the specific embodiments, but limit the utility model absolutely not.
Embodiment 1:
As shown in Figure 1, this LED encapsulating structure comprises the reflective support 2 that is bowl cup-like structure, be arranged on described reflective support 2 bottoms, specifically be positioned at the blue-light LED chip 1 that bowl cup-like structure bottom substrate presets the die bond position, and the reflective support 2 of fluorescence wafer 3(that is erected at described reflective support 2 tops is when making, namely reserved the position that is used for installing fluorescence wafer 3 on top, specifically the cup of bowl cup-like structure is along inboard, label is 6 among Fig. 1), be buckled with lens 5 at the top of described fluorescence wafer 3, be provided with radiating subassembly 4 in the bottom outside of described reflective support 2.
Wherein, reflective support 2 adopts good metallic copper or the steel of heat conductivility to make, and its inboard is mirror surface.
Described fluorescence wafer 3 adopts the fluorescent materials such as rare-earth-dopping yttrium aluminum garnet monocrystalline, can blue-light excited lower, send the light of one or more wave bands.Fluorescence wafer 3 is laminated structure, and thickness is 0.2-2mm, and the surface is through the single or double polishing, and is perhaps two-sided all without polishing.The seamless contact between the edge of fluorescence wafer 3 and the reflective support 2, namely the edge of fluorescence wafer 3 directly contacts with reflective support 2, improves the heat dispersion of device.
Described lens 5 are the optical grade polymethyl methacrylate.
The utility model is fixed on the die bond position that reflective support 2 bottom substrates preset by the mode of die bond with single or multiple led chips 1, then carries out bonding wire; Then fluorescence wafer 3 is erected at the ad-hoc location (cup of bowl cup-like structure is along inboard) of reserving on reflective support 2 tops, is fixed; Then buckle lens 5 at reflective support 2, add radiating subassembly 4 in reflective support 2 bottom outside at last.
Embodiment 2:
In this embodiment, the fluorescence wafer comprises the first fluorescence wafer 31 and the second fluorescence wafer 32, during assembling, the first fluorescence wafer 31 and the second fluorescence wafer 32 are by the graded ad-hoc location that spiral-lock reserves on reflective support top that superposes up and down, be fixed and get final product, all the other repeat no more with embodiment 1, and concrete structure as shown in Figure 2.
The utility model also can have various embodiments, as can be by increasing multi-disc fluorescence wafer (the fluorescence wafers of combination varying number, different-thickness, different luminous wave bands), (single led chip as shown in Figure 3 for the led chip group that a plurality of led chips 1 form, the led chip group that a plurality of led chips form is as shown in Figure 4), change all parts in the replacement above-described embodiments such as reflective support, lens material.
The utility model is not limited to above-mentioned execution mode, if various changes of the present utility model or distortion are not broken away from spirit and scope of the present utility model, if these changes and distortion belong within claim of the present utility model and the equivalent technologies scope, then the utility model also is intended to comprise these changes and distortion.
Claims (10)
1. encapsulating structure that the fluorescence wafer is used for large power white light LED, it is characterized in that: this encapsulating structure comprises reflective support (2), led chip (1), fluorescence wafer and the lens (5) that are bowl cup-like structure, described led chip (1) is arranged on the die bond position that the bottom substrate of described reflective support (2) presets, described fluorescence wafer rack is located at the cup of described reflective support (2) along inboard, and described lens (5) are buckled in the top of described reflective support (2).
2. according to claim 1 with the encapsulating structure of fluorescence wafer for large power white light LED, it is characterized in that: the bottom outside of described reflective support (2) is provided with radiating subassembly.
3. according to claim 1 and 2 it is characterized in that: the material of reflective support (2) is conductive metal with the encapsulating structure of fluorescence wafer for large power white light LED, and its inboard is mirror surface.
4. according to claim 3 with the encapsulating structure of fluorescence wafer for large power white light LED, the material that it is characterized in that reflective support (2) is copper or steel.
5. according to claim 1 with the encapsulating structure of fluorescence wafer for large power white light LED, it is characterized in that: the quantity of described fluorescence wafer is at least one; When the quantity of fluorescence wafer during more than 1, each fluorescence wafer superpose up and down be erected at reflective support (2) cup along inboard.
6. according to claim 1 or 5 the fluorescence wafer is used for the encapsulating structure of large power white light LED, it is characterized in that: the seamless contact between the edge of described fluorescence wafer and the reflective support (2).
7. according to claim 1 or 5 the fluorescence wafer is used for the encapsulating structure of large power white light LED, it is characterized in that: the thickness of described fluorescence wafer is 0.2-2mm.
8. according to claim 1 or 5 the fluorescence wafer is used for the encapsulating structure of large power white light LED, it is characterized in that: described fluorescence wafer surface is through the single or double polishing, and is perhaps two-sided all without polishing.
9. according to claim 1 or 5 the fluorescence wafer is used for the encapsulating structure of large power white light LED, it is characterized in that: described fluorescence wafer is the rare-earth-dopping yttrium aluminum garnet single-chip.
10. according to claim 1 with the encapsulating structure of fluorescence wafer for large power white light LED, it is characterized in that: the quantity of described led chip (1) is at least one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220474882 CN202905773U (en) | 2012-09-17 | 2012-09-17 | Package structure with fluorescent wafer used on large-power white-light LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220474882 CN202905773U (en) | 2012-09-17 | 2012-09-17 | Package structure with fluorescent wafer used on large-power white-light LED |
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| CN202905773U true CN202905773U (en) | 2013-04-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220474882 Expired - Fee Related CN202905773U (en) | 2012-09-17 | 2012-09-17 | Package structure with fluorescent wafer used on large-power white-light LED |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102891245A (en) * | 2012-09-17 | 2013-01-23 | 温州大学 | High-power white light emitting diode (LED) packaging structure employing fluorescence wafer and packaging method thereof |
| CN103805196A (en) * | 2014-02-27 | 2014-05-21 | 昆山开威电子有限公司 | Composite structure based on Ce: YAG (yttrium aluminum garnet) wafer and production method |
| CN105864683A (en) * | 2015-01-22 | 2016-08-17 | 青岛海信电器股份有限公司 | Light source assembly, backlight module and display device |
| CN106678668A (en) * | 2015-10-29 | 2017-05-17 | 长城汽车股份有限公司 | Laser color converter used for laser lighting |
-
2012
- 2012-09-17 CN CN 201220474882 patent/CN202905773U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102891245A (en) * | 2012-09-17 | 2013-01-23 | 温州大学 | High-power white light emitting diode (LED) packaging structure employing fluorescence wafer and packaging method thereof |
| CN103805196A (en) * | 2014-02-27 | 2014-05-21 | 昆山开威电子有限公司 | Composite structure based on Ce: YAG (yttrium aluminum garnet) wafer and production method |
| CN103805196B (en) * | 2014-02-27 | 2016-09-28 | 昆山开威电子有限公司 | A kind of composite construction based on Ce:YAG wafer and manufacture method |
| CN105864683A (en) * | 2015-01-22 | 2016-08-17 | 青岛海信电器股份有限公司 | Light source assembly, backlight module and display device |
| CN106678668A (en) * | 2015-10-29 | 2017-05-17 | 长城汽车股份有限公司 | Laser color converter used for laser lighting |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130424 Termination date: 20130917 |