CN202948972U - White light light emitting diode (LED) module packaging structure - Google Patents
White light light emitting diode (LED) module packaging structure Download PDFInfo
- Publication number
- CN202948972U CN202948972U CN2012206362426U CN201220636242U CN202948972U CN 202948972 U CN202948972 U CN 202948972U CN 2012206362426 U CN2012206362426 U CN 2012206362426U CN 201220636242 U CN201220636242 U CN 201220636242U CN 202948972 U CN202948972 U CN 202948972U
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- fluorescent glass
- white light
- led
- fluorescent
- package structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Abstract
The utility model belongs to the electronic packaging technology, and relates to a white light light emitting diode (LED) module packaging structure, which comprises an LED chip, lead wires, a solid crystal layer, a heat dissipation substrate and a fluorescent glass and the like, wherein the fluorescent glass consists of a glass substrate and a fluorescent glass layer which is arranged on the surface of the glass substrate, and the fluorescent glass and the LED chip are connected through filled silica gel or direct bonding process. The total thickness of the fluorescent glass is 0.5-3mm, the thickness of the fluorescent glass layer is 50-500 microns, the refraction index of a fluorescent glass layer material is equal to or smaller than the refraction index of a glass substrate material, the refraction index of the filled silica gel is equal to or slightly greater than the refraction index of the glass substrate material. The white light LED module packaging structure reduces process cost, simultaneously improves uniformity and thermal stability of fluorescent powder, improves packaging quality of LED devices, improves lighting effect because of adopting the technology of departing from the phosphor powder, and is suitable for large-scale production of LED packaging and development of packaging technology of chips on boards.
Description
Technical field
Under the utility model, the field belongs to Electronic Encapsulating Technology, is specifically related to the encapsulating structure of a kind of white light LEDs (light-emitting diode) module.
Background technology
For the large power white light LED encapsulation, the effect of fluorescent material is photochromic compound, forms white light.Fluorescent material occupation mode commonly used is that fluorescent material is mixed with packaging plastic (epoxy resin or silica gel), then is coated on LED chip.The thickness and the shape that are difficult to accurately control phosphor powder layer due to coating processes cause the colour temperature of LED device and color rendition index fluctuation very large, affect product quality.In addition, because the fluorescent material glue-line is to be formed by epoxy resin or silica gel and fluorescent material allotment, thermal endurance, ageing resistance and moisture vapor resistance can be relatively poor, thereby affect the long-term reliability of LED device.
For thermal endurance and the ageing resistace that improves phosphor powder layer, carried out a series of research both at home and abroad.Japanese General Electric glass company developed the YAG fluorescent glass sheet that can be used for the LED encapsulation in 2005.This fluorescent glass sheet mixes rear sintering by glass dust and fluorescent material and forms, and has good thermal endurance and moisture vapor resistance, compares common fluorescent material glue-line, and the reliability of LED packaging improves; American documentation literature (US 2009/0212697A1 and US2010/0207512A1) discloses a kind of semitransparent ceramics piece preparation method that contains fluorescent material, is mainly formed by ceramic powder, fluorescent material, binding agent, sintering aid sintering under high temperature (1400-1500 ℃) inert gas environment; Chinese patent literature CN 101314519A discloses a kind of rare earth doping luminescent glass for white radiation LED and preparation method thereof, prepare by high temperature melting (1450-1550 ℃ lower sintering 2-3 hour) the fluorescent glass body that contains fluorescent RE powder, satisfy the white-light LED encapsulation requirement; Chinese patent literature CN 101723586 A disclose a kind of fluorescent material vitreum that is applied to semiconductor lighting and preparation method thereof, by doped by rare-earths aluminate fluorescent powder in aluminium borate glass dust, form at the lower hot pressed sintering of high temperature (400-500 ℃).In addition, the people such as Ding Weijia utilize sol-gel process to prepare low temperature fluorescent glass body, and the people such as Zhu Xuehui utilize vacuum sintering technique to prepare Ce:YAG fluorescent glass body, are used for LED and encapsulate and improved the LED device performance.
Adopt fluorescent glass sheet packaged LED, preparation and the coating processes of fluorescent material and glue in the encapsulation process have not only been omitted, improve white-light LED encapsulation efficient, and improved uniformity and the thermal stability of fluorescent material, thereby improved luminous mass and the reliability of LED device.Adopt the fluorescent glass packaging LED module as German Sumita company, light 10000 as a child not declines of rear brightness in 85 ℃ of environment, slightly rise on the contrary, and common LED package module (adopting the fluorescent material glue-line) brightness has under the same conditions reduced by 20%.But in above-mentioned fluorescent glass preparation process, mix in glass dust sintering together in being due to fluorescent material, fluorescent material consumption large (material cost is high) not only, and high-temperature sintering process (greater than 1000 ℃) can to crystalline phase (crystal structure) the generation damage of fluorescent material, affect the luminous efficiency of fluorescent material.What is more important, this fluorescent glass body need could be used for the LED encapsulation after cutting, grinding, polishing, and process costs is very high.
The utility model content
For the deficiencies in the prior art, the utility model proposes a kind of novel white light LEDs module package structure, this structure can reduce process costs and phosphor material powder cost, and can improve the light efficiency of LED encapsulation module.
The white light LEDs module package structure that the utility model provides comprises LED chip, lead-in wire, die bond layer, heat-radiating substrate and fluorescent glass sheet; LED chip is mounted on heat-radiating substrate by the die bond material; The LED chip electrode is through electrical interconnection between Bonding and heat-radiating substrate pad; The fluorescent glass sheet covers above LED chip, and realizes connecting by filling gel or Direct Bonding technique between the two.
As improvement of the technical scheme, described fluorescent glass sheet fluorescent glass sheet is comprised of the fluorescent glass layer on glass substrate and surface thereof.
The utility model is compared with using fluorescent material glue-line packaged LED, has not only reduced process costs (need not prepare and apply phosphor gel), has improved simultaneously uniformity and the thermal stability of fluorescent material, has improved the package quality of LED device; Compare with the fluorescent glass of inner blending method preparation, owing to only having the fluorescent glass layer at glass substrate surface, process costs (need not cut, grinding and polished glass sheet) and phosphor material powder cost have not only been reduced, and owing to having adopted away from fluorescent material technology (spacing can be passed through the glass substrate THICKNESS CONTROL), improved the light efficiency of LED encapsulation module, be particularly suitable for high-power LED encapsulation and make in batches the growth requirement with multi-chip COB (chip on board encapsulation).
The advantage of a kind of white light LEDs module package structure of the utility model is: compare with using fluorescent material glue-line packaged LED, this structure not only can reduce process costs (need not prepare and apply phosphor gel) when packaged LED, can also improve simultaneously uniformity and the thermal stability of fluorescent material, improve the package quality of LED device; Compare with the fluorescent glass of inner blending method preparation, owing to only having the fluorescent glass layer at glass substrate surface, process costs (need not cut, grinding and polished glass sheet) and phosphor material powder cost have not only been reduced, and owing to having adopted away from fluorescent material technology (distance can be passed through the glass substrate THICKNESS CONTROL), improved the light efficiency of LED encapsulation module.Simultaneously, this LED encapsulating structure also is fit to the development of large-scale production and chip on board encapsulation technology (COB).
Description of drawings
Fig. 1 is the white light LEDs modular structure of existing fluorescent material glue-line encapsulation, and in figure, 10 be heat-radiating substrate, and 11 is LED chip, and 12 mix the glue-line of fluorescent material in being, 13 is the glue-line of not mixing fluorescent material.
Fig. 2 is the white light LEDs modular structure of the fluorescent glass sheet encapsulation of mixing fluorescent material in existing the employing, and in figure, 20 is heat-radiating substrate, and 21 is LED chip, and 22 mix the sheet glass of fluorescent material in being, 23 is layer of silica gel.
Fig. 3 is the White-light LED package structure schematic diagram of the utility model embodiment 1.
Fig. 4 is the White-light LED package structure schematic diagram of the utility model embodiment 2.
Fig. 5 is the White-light LED package structure schematic diagram of the utility model embodiment 3.
Embodiment
The technical scheme that the utility model proposes is: adopt the fluorescent glass sheet to replace (the fluorescent glass layer by glass substrate and surface thereof forms) the fluorescent glass sheet of fluorescent material glue-line or inner blending method preparation.In the LED encapsulation process, at first adopt the die bond material that LED chip is mounted on heat-radiating substrate; Then realize electrical interconnection between LED chip electrode and heat-radiating substrate pad by Bonding; At last the fluorescent glass sheet is covered LED chip top, be connected by filling gel or the realization of Direct Bonding technique between fluorescent glass sheet and LED chip.
Below in conjunction with accompanying drawing, embodiment of the present utility model is described further.Need to prove at this, understand the utility model for the explanation of these execution modes for helping, but do not consist of restriction of the present utility model.In addition, below in each execution mode of described the utility model involved technical characterictic just can mutually not make up as long as consist of each other conflict.
A kind of white light LEDs module package structure that the utility model provides, this LED encapsulation module is comprised of LED chip, lead-in wire, die bond layer, heat-radiating substrate and fluorescent glass sheet etc.LED chip adopts the die bond material to be mounted on heat-radiating substrate; Then realize electrical interconnection between LED chip electrode and heat-radiating substrate pad by Bonding; At last the fluorescent glass sheet is covered above LED chip, realize connecting by filling gel or Direct Bonding technique between the two.Wherein, the fluorescent glass sheet is comprised of the fluorescent glass layer on glass substrate and surface thereof, and gross thickness is 0.5 millimeter to 3 millimeters, and the fluorescent glass layer thickness depends on fluorescent material concentration and LED encapsulation requirement, be generally 50 microns to 500 microns, preferred value is 10 microns to 300 microns.The refractive index of fluorescent glass layer material is equal to or slightly less than the refractive index of glass substrate material, in the refractive index low 0.2 as the refractive index ratio glass substrate material of fluorescent glass layer material; Another feature of the present utility model be described fluorescent glass sheet with LED chip between realize being connected by filling gel or Direct Bonding technique, the refractive index of filling gel equals or is slightly larger than the refractive index of glass substrate material, in the refractive index large 0.2 as the refractive index ratio glass substrate material of filling gel.The upper surface of fluorescent glass sheet is smooth flat or adopts micro-structural to carry out alligatoring.
Embodiment 1
The utility model White-light LED package structure such as Fig. 3, concrete implementation step is as follows:
1) adopt die bond technique that blue-ray LED horizontal chip 31 is mounted on metal core printed circuit board (PCB) (MCPCB) 30;
2) adopt lead key closing process (gold thread 32), realize the electrical interconnection between LED chip electrode and MCPCB circuit;
3) whole MCPCB substrate 30 is fixed in metal pattern framing 33;
4) require (colour temperature, color rendering index etc.) according to chip dominant wavelength and encapsulation, (gross thickness is 0.5 millimeter to choose corresponding fluorescent glass sheet 35, the fluorescent glass layer thickness is 50 μ m, glass substrate refractive index 1.48), be cut to and be slightly less than the module framework size, then cover (fluorescent glass layer 34 up) on the LED chip array, and adopt screw etc. to be fixed on module framework 33;
5) adopt glue-injection machine equipment, the filling refractive index is 1.5 silica gel 36 between fluorescent glass sheet 35 and LED chip 31 arrays;
6) heating is solidified silica gel, obtains the white-light LED encapsulation module.
Embodiment 2
The utility model White-light LED package structure such as Fig. 4, concrete implementation step is as follows:
1) adopt die bond technique, 25 (5 * 5) blue-light LED chips 41 are mounted on ceramic copper-clad base plate (DPC) 40;
2) adopt lead key closing process (gold thread 42), realize the electrical interconnection between circuit on LED chip 41 and ceramic substrate 40;
3) whole ceramic substrate 40 is fixed in metal pattern framing 43;
4) require (colour temperature, color rendering index etc.) according to chip dominant wavelength and encapsulation, (gross thickness is 3.0 millimeters to choose corresponding fluorescent glass sheet, the fluorescent glass layer thickness is 500 μ m, glass substrate refractive index 1.50), be placed in high temperature furnace, be warming up to following 50 ℃ of the glass transition temperature of glass substrate, adopt hot pressing mode to prepare microlens array 45 on fluorescent glass layer 44 surface of glass substrate, cooling rear standby;
5) fluorescent glass sheet 46 is cut into be slightly less than the module framework size, then it is covered (microlens array up) on the LED chip array, and adopt epoxy bond on module framework;
6) adopt glue-injection machine, the filling refractive index is 1.50 silica gel 47 between fluorescent glass sheet 45 and LED chip array;
7) heating is solidified silica gel, obtains the white-light LED encapsulation module.
Embodiment 3
The utility model White-light LED package structure such as Fig. 5, its concrete implementation step is as follows:
1) select the wafer 51 of flip LED structure;
2) require (colour temperature, color rendering index etc.) according to chip dominant wavelength and encapsulation, choose corresponding fluorescent glass sheet 52 (gross thickness is 1.0 millimeters, and the fluorescent glass layer thickness is 100 μ m, glass substrate refractive index 1.50);
3) adopt thermocompression bonding technique, realize the high strength bonding (fluorescent glass layer 53 up) of 51 of fluorescent glass sheet 52 and LED wafers;
4) cut the LED module 54 that obtains directly emitting white light according to LED chip size or module size.
The above is only the preferred embodiment of a kind of White-light LED package structure of the utility model, is not that the utility model technical scope is made any restriction.In above-mentioned embodiment, LED chip also can be selected ultraviolet LED chip or other monochromatic light LED chips, and just the phosphor material powder in corresponding fluorescent glass sheet need be done suitable adjustment.In addition, in embodiment 2, adopt hot pressing mode to prepare microlens array at glass substrate surface, also can be according to the LED package requirements, prepare concavees lens, little taper figure etc. on fluorescent glass sheet surface and realize surface coarsening.Therefore, every foundation technical spirit of the present utility model is made any modification or equivalent variations, modification to above-described embodiment, all belongs to the scope of the utility model technology contents.
Claims (10)
1. a white light LEDs module package structure, is characterized in that, it comprises LED chip, lead-in wire, die bond layer, heat-radiating substrate and fluorescent glass sheet; LED chip is contained on heat-radiating substrate by the die bond laminating; The electrode of LED chip is asked electrical interconnection through the pad of Bonding and heat-radiating substrate; The fluorescent glass sheet covers above LED chip, and both ask by filling gel or Direct Bonding technique realization connection.
2. white light LEDs module package structure according to claim 1, is characterized in that, described fluorescent glass sheet is comprised of the fluorescent glass layer on glass substrate and surface thereof.
3. white light LEDs module package structure according to claim 1, is characterized in that, described fluorescent glass sheet gross thickness is 0.5 millimeter to 3 millimeters.
4. white light LEDs module package structure according to claim 2, is characterized in that, the thickness of described fluorescent glass layer is 50 microns to 500 microns.
5. white light LEDs module package structure according to claim 2, is characterized in that, the thickness of described fluorescent glass layer is 100 microns to 300 microns.
6. according to claim 2,4 or 5 described white light LEDs module package structures, it is characterized in that, the refractive index of described fluorescent glass layer material equals the refractive index of glass substrate material, perhaps in the refractive index of the refractive index ratio glass substrate material of fluorescent glass layer material low 0.2.
7. arbitrary described white light LEDs module package structure according to claim 1 to 5, is characterized in that, the upper surface of fluorescent glass sheet is smooth flat or by micro-structural alligatoring face.
8. arbitrary described white light LEDs module package structure according to claim 1 to 5, is characterized in that, the fluorescent glass sheet is asked by filling gel or Direct Bonding with LED chip and is connected.
9. white light LEDs module package structure according to claim 7, is characterized in that, the fluorescent glass sheet is asked by filling gel or Direct Bonding with LED chip and is connected.
10. white light LEDs module package structure according to claim 8, is characterized in that, the refractive index of described filling gel equals the refractive index of glass substrate material, perhaps in the refractive index large 0.2 of the refractive index ratio glass substrate material of filling gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012206362426U CN202948972U (en) | 2012-11-28 | 2012-11-28 | White light light emitting diode (LED) module packaging structure |
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| CN2012206362426U CN202948972U (en) | 2012-11-28 | 2012-11-28 | White light light emitting diode (LED) module packaging structure |
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| CN202948972U true CN202948972U (en) | 2013-05-22 |
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| CN2012206362426U Expired - Lifetime CN202948972U (en) | 2012-11-28 | 2012-11-28 | White light light emitting diode (LED) module packaging structure |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI509843B (en) * | 2013-10-23 | 2015-11-21 | Opto Tech Corp | Led package structure |
| CN105198238A (en) * | 2014-06-13 | 2015-12-30 | 光联科技股份有限公司 | Glass attaching method |
| CN105789422A (en) * | 2014-12-25 | 2016-07-20 | 江苏豪迈照明科技有限公司 | Preparation method for LED lamp tube, and prepared LED lamp tube and LED lamp |
| CN107248547A (en) * | 2017-06-21 | 2017-10-13 | 鸿宝科技股份有限公司 | A kind of high-power LED integrated chip encapsulating structure and its method for packing |
| CN107331759A (en) * | 2017-08-21 | 2017-11-07 | 厦门华联电子股份有限公司 | Exempt from the wafer-level packaging method and LED flip chip packaging body of organic gel |
| CN107527979A (en) * | 2017-08-21 | 2017-12-29 | 厦门华联电子股份有限公司 | A kind of ultraviolet LED method for packing and encapsulating structure |
| CN110400864A (en) * | 2019-09-02 | 2019-11-01 | 宁波升谱光电股份有限公司 | A kind of LED light and its encapsulation chip |
| US10573779B2 (en) | 2014-07-14 | 2020-02-25 | Genesis Photonics Inc. | Method for manufacturing light emitting unit |
| CN112993123A (en) * | 2021-01-22 | 2021-06-18 | 深圳市鑫业新光电有限公司 | Packaging process for pasted glass sheet |
-
2012
- 2012-11-28 CN CN2012206362426U patent/CN202948972U/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI509843B (en) * | 2013-10-23 | 2015-11-21 | Opto Tech Corp | Led package structure |
| CN105198238A (en) * | 2014-06-13 | 2015-12-30 | 光联科技股份有限公司 | Glass attaching method |
| US10573779B2 (en) | 2014-07-14 | 2020-02-25 | Genesis Photonics Inc. | Method for manufacturing light emitting unit |
| CN105789422A (en) * | 2014-12-25 | 2016-07-20 | 江苏豪迈照明科技有限公司 | Preparation method for LED lamp tube, and prepared LED lamp tube and LED lamp |
| CN107248547A (en) * | 2017-06-21 | 2017-10-13 | 鸿宝科技股份有限公司 | A kind of high-power LED integrated chip encapsulating structure and its method for packing |
| CN107331759A (en) * | 2017-08-21 | 2017-11-07 | 厦门华联电子股份有限公司 | Exempt from the wafer-level packaging method and LED flip chip packaging body of organic gel |
| CN107527979A (en) * | 2017-08-21 | 2017-12-29 | 厦门华联电子股份有限公司 | A kind of ultraviolet LED method for packing and encapsulating structure |
| CN110400864A (en) * | 2019-09-02 | 2019-11-01 | 宁波升谱光电股份有限公司 | A kind of LED light and its encapsulation chip |
| CN112993123A (en) * | 2021-01-22 | 2021-06-18 | 深圳市鑫业新光电有限公司 | Packaging process for pasted glass sheet |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
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| CP03 | Change of name, title or address |
Address after: 430200 Wuhan four East Lake Road Development Zone, Hubei 40 Gezhouba Dam 40 Sun City 23 building 103 room. Patentee after: WUHAN LIZHIDA TECHNOLOGY CO.,LTD. Address before: 430074 Ding Yuan Lou, international business center, Optics Valley Avenue, Wuhan, Hubei, A423 Patentee before: WUHAN LIZHIDA SCIENCE & TECHNOLOGY Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130522 |