CN106129222A - The high power white LED device of monolithic package - Google Patents
The high power white LED device of monolithic package Download PDFInfo
- Publication number
- CN106129222A CN106129222A CN201610710278.7A CN201610710278A CN106129222A CN 106129222 A CN106129222 A CN 106129222A CN 201610710278 A CN201610710278 A CN 201610710278A CN 106129222 A CN106129222 A CN 106129222A
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- chip
- high power
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- led device
- white led
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- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000002131 composite material Substances 0.000 claims abstract description 14
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 14
- 239000010432 diamond Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000000945 filler Substances 0.000 claims abstract description 4
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 239000000741 silica gel Substances 0.000 abstract description 10
- 229910002027 silica gel Inorganic materials 0.000 abstract description 10
- 238000002156 mixing Methods 0.000 abstract description 8
- 239000000919 ceramic Substances 0.000 abstract description 6
- 239000006185 dispersion Substances 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000000605 extraction Methods 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000011222 crystalline ceramic Substances 0.000 description 1
- 229910002106 crystalline ceramic Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
A kind of high power white LED device of monolithic package, including Al C composite substrate and blue chip, gold-plated diamond film on described Al C composite substrate, described diamond film arranges conductive layer, described conductive layer arranges blue chip, described blue chip is added a cover the capping of fluorescence wafer, between described blue chip and fluorescence wafer cover, adds trace filler.The present invention uses single-chip capping to replace the packaged type of fluorescent material mixing silica gel, eliminate metal rack, take full advantage of the lateral face light of chip, improve the white light light extraction efficiency that chip is overall, and owing to the thermal conductivity of single-chip is higher than the thermal conductivity of fluorescent material mixing silica gel so that the heat dispersion of device is improved.The Al C substrate of the diamond film of the high heat conductance of substrate employing simultaneously, heat radiation is much better than conventional ceramic substrate so that device heat radiation is more excellent, and then ensure that the normal work of high power white LED device.
Description
Technical field
The present invention relates to light emitting diode, the high power white LED device of a kind of monolithic package.
Background technology
LED, as a kind of light emitting semiconductor device, is showing rapidly with its specular removal, life-span length, the advantage of energy-conserving and environment-protective
Being used widely with lighting field, wherein high-power LED is shown greatly by the field such as bulkhead lamp and headlight for vehicles especially
Enthusiasm.The main mode using fluorescent material mixing silica gel of LED encapsulation at present is packaged, and high-capacity LED operationally can
Producing substantial amounts of heat, owing to fluorescent material mixing silica gel thermal conductivity is low, the heat collection party of excess causes temperature to steeply rise so that
The light efficiency of LED chip declines, and it is aging that too high temperature also can accelerate silica gel so that LED life declines.Additionally general LED chip
The heat-radiating substrate of bottom selects common aluminium oxide ceramic substrate or aluminium base, it is also difficult to ensure that heat can effectively pass from bottom
Go out.The existence of these problems so that high-capacity LED device cisco unity malfunction.Meanwhile, in order to reduce high-capacity LED device
Entire area, the size of LED chip itself is also constantly increasing, and this is proposed more strict requirements to dispelling the heat and going out light.
Publication date be on March 23rd, 2016, Publication No. CN 105431503A Chinese invention patent application " high-power
High temperature white-light LED encapsulation and preparation method thereof " propose use plane fluorescent wafer packaged type to improve heat radiation, but right
It is not appropriate for for five faces go out the large scale LED chip of light, because the ambient light of LED chip can lose completely under this kind of mode
Fall (assuming that large size chip is 3*3*0.15mm, then the ambient light calculated accounts for 20%).Commonly make pottery in terms of substrate selection
The thermal conductivity of porcelain is the lowest, and publication date be 2016 08 month No. 03, the Chinese invention patent Shen of Publication No. CN 105826454
Please the substrate in " discrete crystalline ceramics Flip-chip IC LED light source and method for packing thereof " have employed the nitridation of high heat conductance
Aluminum, but expensive.
Summary of the invention
The present invention is to solve the problems referred to above, it is provided that the high power white LED device of a kind of monolithic package, and from going out
Light and heat radiation two aspects are started with.In terms of going out light, single-crystal wafer capping is used to replace the packaged type of fluorescent material mixing silica gel, by
Light conversion efficiency and heat dispersion in monocrystalline Ce:YAG are superior to fluorescent material mixing silica gel, therefore use the mode of wafer capping
Both make use of LED's laterally to go out light, and improve again light conversion efficiency, and then overall white light light emission rate is improved.Additionally use
Thermal conductivity is better than the monocrystalline of fluorescent material mixing silica gel, and part solves the heat dissipation problem of high-capacity LED again.For meeting height further
The cooling requirements of power device, bottom substrate uses the Al-C composite substrate of the diamond film of high heat conductance to replace price
Expensive aluminium nitride ceramics and the best conventional ceramic substrate of heat dispersion.Single-crystal wafer capping is used to coordinate high heat dispersion
The Al-C composite substrate of diamond film ensure that the normal work of high-capacity LED device.
In order to achieve the above object, the invention provides techniques below scheme:
The high power white LED device of a kind of monolithic package, including Al-C composite substrate and blue chip, in institute
Gold-plated diamond film on the Al-C composite substrate stated, arranges conductive layer on described diamond film, at described conductive layer
On blue chip is set, described blue chip is added a cover fluorescence wafer capping.
Trace filler is added between described blue chip and fluorescence wafer cover.Described filler is hot setting
Glue, for filling the minim gap of wafer and chip.
Described blue chip is the large scale blue LED flip chip that five faces go out light.
Described fluorescence wafer cover closing material is monocrystalline Ce:YAG.
The capping of described fluorescence wafer is made up of the wafer bonding of planar rectangular wafer and middle hollow out (can according to reality application
Concentration or doping component to wafer adjust).
Described blue chip is large scale (planar dimension is at more than 2.5*2.5mm) the upside-down mounting blue-ray LED that five faces go out light
Chip.
Compared with prior art, the invention has the beneficial effects as follows:
(1) using the capping of fluorescence wafer to replace the packaged type of fluorescent material mixing silica gel, the metal eliminating encapsulation props up
Frame, make use of the side of chip to go out light, improves the light emission rate of entirety.Wafer is additionally used to substitute fluorescent material, relative to fluorescence
Powder, not only makes blue light excite the light conversion efficiency of wafer to be improved, and the radiating effect of LED chip top and surrounding is also carried
High.
(2) have employed the Al-C composite substrate of the higher diamond film of heat conductivity so that dissipating bottom LED chip
Hot property is significantly improved relative to conventional ceramic substrate, simultaneously cheap than aluminium nitride substrate again in price, thus ensure that
The normal work of this high power white LED device.
Accompanying drawing explanation
Fig. 1 is the structural representation of the high power white LED device of monolithic package of the present invention
Fig. 2 is fluorescence wafer capping figure of the present invention
Fig. 3 is the structural representation of the high power white LED device of the multiple LED chip of the present invention
In figure, 1.Al-C composite 2. diamond film 3. conductive layer 31. conductive layer positive pole 32. conductive layer negative pole
4. blue chip 5. high temperature setting glue 6. fluorescence wafer covers the wafer of the 61. middle hollow outs of planar rectangular wafer 62.
Detailed description of the invention
The present invention is described further with scheme implementation process below in conjunction with the accompanying drawings, so that those skilled in the art
It is more fully understood that the present invention.
Embodiment 1 (white light LED part of single large scale LED chip)
(1) according to scheme requirement, by the way of vacuum sputtering, on Al-C composite thick for about 1mm, it is deposited with one layer
The diamond film of about 50 μm, serves as insulating barrier, then plated with copper conductive layer by the way of changing crystalline substance, finally obtains and meet electric requirement
The Al-C composite substrate of diamond film, such as Fig. 1.
(2) chip mounter is used to coordinate tin cream to be fixed on substrate by large-sized blue LED flip chip, and by backflow
Weldering solidification further.
(3) by Czochralski grown crystal, obtaining doping content is 0.8%, the columned crystalline substance of Ce:YAG of a diameter of 5cm
Body, cutting process obtains the round shape wafer of different-thickness.
(4) the round shape wafer obtaining step (3) carries out machine cuts and obtains plane wafer, according to going out light requirement to wafer
Carry out polishing in various degree, finally obtain the planar rectangular wafer 61 of certain crystalline size, as the top layer covered such as
Fig. 2.
(5) the round shape wafer obtained step (3) with laser carries out hollow out processing, obtains the wafer 62 of middle hollow out
(shape is not limited to rectangle), is binded the wafer 62 of planar rectangular wafer 61 and middle hollow out, such as Fig. 2 by binding agent.
(6) by coating the high temperature setting glue 5 of trace inside the fluorescence wafer obtained by step (5) capping, then by fluorescence
Wafer capping 6 is mounted on the top on blue chip 4 and surrounding, completes encapsulation, such as Fig. 1.
(7) chip packaged for step (6) is put in constant temperature oven it is heating and curing, obtain packaged LED chip,
Such as Fig. 1.
Embodiment 2 (white light LED parts of multiple large scale LED chip)
(1) similar to Example 1, but except for the difference that embodiment 2 is suitable for the envelope of multi-chip high power white LED device
Dress.
(2) according to scheme requirement, the method using machining, prepare the Al-C composite as shown in shape in Fig. 3
(side of the convenient final white light parts LED chip prepared goes out light).
(3) same as in Example 1, operate according to the step of step 1-7 in embodiment 1 successively, complete to multiple greatly
The encapsulation of size LED chips, obtains multi-chip high power white LED device.
The high power white LED device of the monolithic package of the present invention, uses the encapsulation side of monocrystalline Ce:YAG wafer capping
Formula eliminates metal rack, make use of the lateral face light of chip, improves the lateral light emission rate of chip.Additionally use fluorescence wafer
Replace fluorescent material so that light conversion efficiency is improved, and owing to the thermal conductivity of Ce:YAG single-crystal wafer is mixed higher than fluorescent material
Close the thermal conductivity of silica gel so that top and the surrounding heat dispersion of high-power LED chip are improved.The substrate of this device simultaneously
The Al-C composite substrate of the diamond film of high heat conductance, heat radiation is used to be much better than conventional ceramic substrate so that device dispels the heat
More preferably, work more stable.The packaged type that the present invention provides is not only suitable for the encapsulation of single large scale LED chip, is also adaptable for many
The encapsulation of individual large scale LED chip.What this packaging efficiently solved LED chip goes out light and heat dissipation problem so that this encapsulation
LED component coordinates the radiating subassemblies such as cuprio seat to be more suitable for high power white LED car headlight and the application of white light bulkhead lamp.
Claims (5)
1. the high power white LED device of monolithic package, including Al-C composite substrate (1) and blue chip (4), it is special
Levy and be, at the upper gold-plated diamond film (2) of described Al-C composite substrate (1), to lead in the upper setting of described diamond film (2)
Electric layer (3), arranges blue chip (4) on described conductive layer (3), adds a cover fluorescence wafer on described blue chip (4)
Capping (6).
The high power white LED device of monolithic package the most according to claim 1, it is characterised in that described blue light core
Sheet (4) is the large scale blue LED flip chip that five faces go out light.
The high power white LED device of monolithic package the most according to claim 1, it is characterised in that described fluorescence is brilliant
Sheet capping (6) material is monocrystalline Ce:YAG.
The high power white LED device of monolithic package the most according to claim 1, it is characterised in that described fluorescence wafer
Capping (6) is binded by the wafer (62) of planar rectangular wafer (61) and middle hollow out and is formed.
The high power white LED device of monolithic package the most according to claim 1, it is characterised in that at described blue light
Filler (5) is added between chip (4) and fluorescence wafer capping (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610710278.7A CN106129222A (en) | 2016-08-23 | 2016-08-23 | The high power white LED device of monolithic package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610710278.7A CN106129222A (en) | 2016-08-23 | 2016-08-23 | The high power white LED device of monolithic package |
Publications (1)
| Publication Number | Publication Date |
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| CN106129222A true CN106129222A (en) | 2016-11-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610710278.7A Pending CN106129222A (en) | 2016-08-23 | 2016-08-23 | The high power white LED device of monolithic package |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108011005A (en) * | 2017-11-10 | 2018-05-08 | 深圳大道半导体有限公司 | Light emitting semiconductor device and its manufacture method |
| CN114361315A (en) * | 2020-10-13 | 2022-04-15 | 福建中科芯源光电科技有限公司 | White light LED chip and device packaged by inorganic material, and preparation method and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101545587A (en) * | 2009-06-08 | 2009-09-30 | 刘素霞 | A preparation method of high-performance heat-radiating semiconductor planar light source |
| CN102925975A (en) * | 2011-08-09 | 2013-02-13 | 上海祥羚光电科技发展有限公司 | Making method for YAG single crystal for white light LED |
| CN204289503U (en) * | 2014-06-05 | 2015-04-22 | 上海富迪照明电器有限公司 | Based on the embedded White-light LED package structure of solid state fluorescent material |
| CN204289523U (en) * | 2014-06-05 | 2015-04-22 | 上海富迪照明电器有限公司 | High power high-temperature white-light LED encapsulation |
| CN105838930A (en) * | 2016-04-15 | 2016-08-10 | 郑州人造金刚石及制品工程技术研究中心有限公司 | Novel Al-C composite and preparation process and application thereof |
-
2016
- 2016-08-23 CN CN201610710278.7A patent/CN106129222A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101545587A (en) * | 2009-06-08 | 2009-09-30 | 刘素霞 | A preparation method of high-performance heat-radiating semiconductor planar light source |
| CN102925975A (en) * | 2011-08-09 | 2013-02-13 | 上海祥羚光电科技发展有限公司 | Making method for YAG single crystal for white light LED |
| CN204289503U (en) * | 2014-06-05 | 2015-04-22 | 上海富迪照明电器有限公司 | Based on the embedded White-light LED package structure of solid state fluorescent material |
| CN204289523U (en) * | 2014-06-05 | 2015-04-22 | 上海富迪照明电器有限公司 | High power high-temperature white-light LED encapsulation |
| CN105838930A (en) * | 2016-04-15 | 2016-08-10 | 郑州人造金刚石及制品工程技术研究中心有限公司 | Novel Al-C composite and preparation process and application thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108011005A (en) * | 2017-11-10 | 2018-05-08 | 深圳大道半导体有限公司 | Light emitting semiconductor device and its manufacture method |
| CN114361315A (en) * | 2020-10-13 | 2022-04-15 | 福建中科芯源光电科技有限公司 | White light LED chip and device packaged by inorganic material, and preparation method and application thereof |
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