CN101545587A - A preparation method of high-performance heat-radiating semiconductor planar light source - Google Patents
A preparation method of high-performance heat-radiating semiconductor planar light source Download PDFInfo
- Publication number
- CN101545587A CN101545587A CN200910045086A CN200910045086A CN101545587A CN 101545587 A CN101545587 A CN 101545587A CN 200910045086 A CN200910045086 A CN 200910045086A CN 200910045086 A CN200910045086 A CN 200910045086A CN 101545587 A CN101545587 A CN 101545587A
- Authority
- CN
- China
- Prior art keywords
- light source
- diamond
- led chip
- preparation
- silica gel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to the technical field of semiconductor lighting. Concretely speaking, the invention is a preparation method of high-performance heat-radiating semiconductor planar light source, the diamond particle composite material with good insulating property and high heat transfer efficiency is used to prepare aluminum-based circuit board as the circuit substrate of LED chip. LED chip is directly bonded or welded to this wired composite circuit board to improve the heat transfer efficiency of the chip; meanwhile diamond particles are mixed into transparent silica gel to form composite material that is highly conductive to heat and conducts and scatters light. The composite material is directly used to encapsulate LED chips. Comparing with prior art, diamond particle composite material greatly raises the reliability and life of light source module; the transparent silica gel containing nano diamond particles can quickly disperse heat, plays a role of light conduction and scattering, turns LED point light source to an area light source, reduces light loss, and meanwhile simplifies the steps of LED encapsulation process, reduces the manufacturing cost of light sources and facilitates large-scale production.
Description
[technical field]
The present invention relates to technical field of semiconductor illumination, specifically a kind of preparation method of high-performance heat-radiating semiconductor planar light source.
[background technology]
Semiconductor lighting is a kind of LED of using, it is the new and effective solid light source that Light Emitting Diode is made, have many advantages such as long-life, energy-conservation, economy, environmental protection, rich color, microminiaturization, progressively substituting traditional incandescent lamp and fluorescent lamp.LED uses as illumination, and its development trend is the high-power chip development to high-luminous-efficiency, makes the luminous flux of single chip high as far as possible, to satisfy the demand of general illumination.
And along with the raising of chip power, required electric current is increasing during chip light emitting, causes local pyrexia that chip temperature is raise and has influence on luminous efficiency, reliability and the life-span etc. of chip; In addition, belong to the similarity light source luminescent because of led chip is luminous, light is more concentrated, can produce dazzle when illumination, and human eye is easily damaged, and uses, generally can reduce the utilization rate of light so need make spot light change into area source by leaded light and astigmatic structure.
Make for the LED lighting source, generally packaged LED device is directly adhered to or is welded on the aluminium base circuit board to strengthen the heat radiation of led chip, because of the material more than at least four layers is arranged in the middle of led chip and the aluminium base, be followed successively by epoxy resins insulation layer, copper film conductive layer, elargol reflecting layer, silicone insulation adhesion layer etc. as material from aluminium base to chip.Comprehensive thermal resistance is bigger, and actual effective heat transfer efficiency is lower; In addition, the conductive layer of compound aluminium base circuit board surface and the insulating barrier between the aluminium base generally adopt the composite of particulates such as epoxy resin and aluminium oxide, thermal conductivity is unsatisfactory, the led light source of manufacturing is relatively poor because of heat transfer property like this, temperature during led chip work is higher, makes chip light emitting efficient reduce, and light intensity attenuation is bigger, make the reliability variation of light source simultaneously, shorten service life.
[summary of the invention]
The objective of the invention is in order to overcome the deficiencies in the prior art, employing has the aluminium base compound circuit plate of Composite Preparation of diamond particle of good insulation performance and high-heat conductive efficency as the circuit substrate of led chip, led chip is directly adhered to or is welded on this compound circuit plate with line, to improve the heat transfer efficiency of chip; Simultaneously diamond particle is doped in the transparent silica gel, formation has the composite of high heat conduction, leaded light, astigmatism, is directly used in the encapsulation of led chip, and makes spot light be converted into area source, improves the radiating efficiency of chip.
For achieving the above object, the preparation method of a kind of high-performance heat-radiating semiconductor planar light source of design is characterized in that adopting being prepared as follows step:
At first, preparation diamond composite mortar: with particle diameter is that 1-100nm king kong stone particulate (21) and particle diameter are little diamond particle (22) mixing of 0.1-10 μ m, the diamond particle that will be mixed with two kinds of grain sizes then mixes for 1:5～10:6～12 by weight with polyethylene glycol and silica gel, control adamantine percentage by weight＜60%, mixture is stirred into slurry;
Then, preparation insulating barrier: adopt silk screen print method or spin-coating method or stamped method, above-mentioned slurry is printed on aluminium base 1 surface, in air or under the vacuum environment, heat to 200-400 ℃, make slurry form fine and close diamond thin, the thickness scope is 10-30 μ m, play the material of the high conductive force of insulation in the film that slurry forms, mainly be that thermal conductivity is at 1000-2000W/K*m, the particle size scope is the king kong stone particulate 21 of 1-10 μ m, also having grain size between king kong stone particulate is little diamond particle 22 fillings of 1nm-1 μ m, make and the densification of insulating heat-conductive layer film can strengthen the intercrystalline heat conductivility of king kong stone simultaneously;
The preparation conductive layer: the employing conductive silver paste is printed on diamond thin 2 surfaces with silk screen print method with the circuitous pattern that designs, and adopts heating furnaces such as Muffle furnace, vacuum drying oven to heat under air condition or gas shield or vacuum state and dries the silver conductive layer 3 of back formation; Also can adopt technology such as magnetron sputtering directly at diamond thin 2 surface deposition layer of copper conductive films,, adopt etching technics and obtain required circuitous pattern then according to the circuitous pattern design;
Connect led chip: led chip 4 is directly pasted or be welded on diamond thin 2 surfaces at the conductive layer 3 figure hollow out places on the composite aluminum substrate, then with gold thread as contact conductor 5, the plus or minus electrode and the conductive layer 3 that the two ends of gold thread are welded on led chip 4 respectively couple together;
Encapsulation: the diamond of 10-100nm after adopting nitric acid or sulfuric acid etc. and carrying out finishing, is used deionized water rinsing, can be distributed in the organic solvent,, add in the transparent silica gel mixing then to as alcohol, acetone, pentane or cyclohexane etc.Wherein, the content of diamond in silica gel is controlled in the weight ratio 10%, the transparent silica gel 6 that will contain diamond particle then is coated on the composite aluminum substrate surface of having welded led chip, heats to 150 ℃ to make it be solidified to form planar light source under air or vacuum environment.
For led chip as adopting blue-light LED chip, then this blue-light LED chip surface-coated phosphor powder layer produces white light, the transparent silica gel 6 that will contain diamond particle then is coated in and is connected with the composite aluminum substrate surface with phosphor powder layer led chip, form the LED white light plane light source then after the baking and curing, the high-termal conductivity and the transparency that have because of diamond, the thermal conductivity of transparent silica gel is strengthened, can play seeing through and scattering process of light simultaneously, make whole luminescent layer uniformly light-emitting.
The present invention compares with prior art, has adopted the diamond particle composite of high heat conduction, makes the heat transfer efficiency of led chip greatly improve, and the reliability of light source module and life-span are greatly improved; Adopt the transparent silica gel of nano-diamond particles, both helped the heat radiation of chip surface, diamond particle can play the effect of leaded light, astigmatism simultaneously, makes the LED spot light change into area source, reduced the loss of light, made light source simultaneously at when illumination free from glare and human eye is felt comfortably cool; Led chip directly is connected with the composite aluminum substrate of high heat conduction, simplified LED packaging technology step, reduced the manufacturing cost of light source, be easy to large-scale production, this technology not only is applicable to high-power single-chip package technology, and the integrated packaging technology of multicore sheet of suitable various power, have the characteristics of application, highly versatile.
[description of drawings]
Fig. 1 is a structural representation of the present invention;
Fig. 2 is a diamond thin structural representation among the present invention.
Appointment Fig. 1 is a Figure of abstract.
Referring to accompanying drawing 1 and Fig. 2,1 is aluminium base; 2 is the diamond laminated film as insulating barrier; 3 is conductive layer, is silverskin or copper film; 4 is led chip; 5 is contact conductor, adopts gold thread; 6 for containing the transparent silica gel of diamond particle; 21 is king kong stone particulate; 22 is little diamond particle.
[specific embodiment]
Below the present invention is further illustrated, the present invention is still more clearly concerning those skilled in the art.
Embodiment 1
The diamond particle 10g of employing 100nm-10 μ m and polyethylene glycol 100g and silica gel 50g are mixed into slurry;
Adopt silk screen print method that this composite mortar is printed on aluminium base 1 surface, under vacuum environment, heat to 300-400 ℃, keep temperature 1-2h, organic principle volatilization back in the slurry forms fine and close diamond thin 2, after high-temperature process, thickness is about 20-30 μ m, as shown in Figure 2, insulation high heat-conductive diamond film 2 is 1000-2000W/K*m by thermal conductivity, particle diameter is the king kong stone particulate 21 of 1-100nm, and to be filled with particle diameter between king kong stone particulate 21 be that the little diamond particle 22 of 0.1-10 μ m is formed, thereby make diamond thin 2 densifications, can strengthen the heat conductivility of 22 of king kong stone particulates simultaneously;
Adopt the conductive silver paste silk screen print method, be printed on aluminium base diamond thin 2 surfaces by the circuitous pattern that designs, the employing Muffle furnace forms silver conductive layer after heating and drying under air condition or gas shield state;
Led chip 4 is directly sticked on the surface of conductive layer 3 hollow out place diamond thins 2 in the composite aluminum substrate that designs, the positive and negative electrode with led chip passes through contact conductor 5 then, adopts gold thread to be welded to designed conductive layer 3 places here;
With the diamond of 10-50nm after nitric acid dousing 20min and washed with de-ionized water, be distributed to organic solvent, in alcohol or acetone etc., add in the transparent silica gel then and mix, the mass ratio of diamond in silica gel is 3%, the transparent silica gel 6 that will have diamond particle then is coated on the composite aluminum substrate surface that connects led chip, heats to 150 ℃ to make it be solidified to form planar light source under vacuum environment.
The diamond particle 8g of employing 250nm-5 μ m and polyethylene glycol 80g and silica gel 100g are mixed into slurry;
Adopt traditional knife coating that this slurry is printed on aluminium base 1 surface, heat under atmospheric environment to 200-300 ℃, keep temperature 0.5-1.5h, the organic principle volatilization back in the composite mortar forms fine and close diamond thin 2, after high-temperature process, the thick 15-20 μ m that is about of diamond thin;
Adopt technology such as magnetron sputtering directly at aluminium base diamond thin 2 surface deposition one deck copper films as conductive layer 3, then according to circuit design, adopt etching technics to obtain required circuitous pattern.
Led chip 4 directly is welded on the surface of the diamond thin 2 at conductive layer 3 hollow out places in the composite aluminum substrate that designs, the positive and negative electrode with led chip 4 is welded to designed conductive layer 3 places by contact conductor 5 then;
With the diamond of 50-80nm after nitric acid dousing 30min and washed with de-ionized water, be distributed to organic solvent, in alcohol or acetone etc., add in the transparent silica gel then and mix, the weight ratio of diamond in silica gel is 5%, the transparent silica gel 6 that will contain diamond particle then is coated on the composite aluminum substrate surface that connects led chip, heats to 150 ℃ to make it be solidified to form planar light source under air ambient.
Above-mentioned led chip, as adopt blue-light LED chip, then at first fluorescent material is applied to the blue-light LED chip surface, the transparent silica gel that will have diamond particle then is coated on the composite aluminum substrate surface that is connected with the blue-light LED chip with phosphor powder layer, forms the LED white light plane light source then after the baking and curing.
Because of the high-termal conductivity and the transparency that diamond has, the thermal conductivity of transparent silica gel is strengthened, can play seeing through and scattering process of light simultaneously, make whole luminescent layer uniformly light-emitting.
Claims (5)
1, a kind of preparation method of high-performance heat-radiating semiconductor planar light source, it is characterized in that adopting and be prepared as follows step: a, preparation diamond composite mortar: with particle diameter is that 1-100nm king kong stone particulate (21) and particle diameter are little diamond particle (22) mixing of 0.1-10 μ m, the diamond particle that will be mixed with two kinds of sizes then mixes for 1:5～10:6～12 by weight with polyethylene glycol and silica gel, control adamantine percentage by weight＜60%, mixture is stirred into slurry; B, preparation insulating barrier: slurry is printed on aluminium base (1) surface, and under air or vacuum environment, be warmed to 200-400 ℃, make the organic principle volatilization in the slurry, forming thick on aluminium base (1) surface is that the diamond thin (2) of 10-30 μ m is as insulating barrier; C, preparation conductive layer: adopt silk screen print method that conductive silver paste is printed on diamond thin (2) surface by the circuitous pattern that designs, heat the oven dry after, form silver conductive layer (3), or adopt magnetically controlled sputter method directly at diamond thin (2) surface deposition layer of copper film as conductive layer (3), and be etched into designed circuitous pattern, form composite aluminum substrate; D, connect led chip: diamond thin (2) surface at conductive layer (3) the figure hollow out place of composite aluminum substrate is directly pasted or be welded on to led chip (4), adopt gold thread to couple together then as the positive and negative electrode and the conductive layer (3) of contact conductor (5) with led chip (4); E, encapsulation: behind the diamond surface modification with 10-100nm, use deionized water rinsing, be distributed in the organic solvent, add in the transparent silica gel then and mix, the transparent silica gel (6) that will contain diamond particle is coated in the composite aluminum substrate surface that is connected with led chip, under air or vacuum environment, heat, make it solidify to form planar light source to 150 ℃.
2, the preparation method of a kind of high-performance heat-radiating semiconductor planar light source as claimed in claim 1 is characterized in that: described slurry adopts silk screen print method or knife coating or stamped method to be printed on aluminium base (1) surface.
3, the preparation method of a kind of high-performance heat-radiating semiconductor planar light source as claimed in claim 1 is characterized in that: the content of diamond in transparent silica gel is controlled at percentage by weight≤10%.
4, the preparation method of a kind of high-performance heat-radiating semiconductor planar light source as claimed in claim 1 is characterized in that: described organic solvent is alcohol or acetone or pentane or cyclohexane.
5, the preparation method of a kind of high-performance heat-radiating semiconductor planar light source as claimed in claim 1 is characterized in that: described led chip is as adopting blue-light LED chip, and then this blue-light LED chip surface-coated phosphor powder layer produces white light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100450869A CN101545587B (en) | 2009-06-08 | 2009-06-08 | A preparation method of high-performance heat-radiating semiconductor planar light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100450869A CN101545587B (en) | 2009-06-08 | 2009-06-08 | A preparation method of high-performance heat-radiating semiconductor planar light source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101545587A true CN101545587A (en) | 2009-09-30 |
| CN101545587B CN101545587B (en) | 2010-09-01 |
Family
ID=41192884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100450869A Expired - Fee Related CN101545587B (en) | 2009-06-08 | 2009-06-08 | A preparation method of high-performance heat-radiating semiconductor planar light source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101545587B (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924177A (en) * | 2010-08-03 | 2010-12-22 | 陕西科技大学 | Light-emitting diode with light distributing function and preparation method thereof |
| CN102117881A (en) * | 2011-01-31 | 2011-07-06 | 王海军 | Light emitting diode (LED) package structure for improving light emitting rate |
| CN102235642A (en) * | 2010-04-22 | 2011-11-09 | 富士迈半导体精密工业（上海）有限公司 | Backlight module |
| CN102235643A (en) * | 2010-04-22 | 2011-11-09 | 富士迈半导体精密工业（上海）有限公司 | Backlight module |
| CN102398386A (en) * | 2011-08-31 | 2012-04-04 | 浙江工业大学 | Highly heat-conducting electric insulation composite material |
| CN102466146A (en) * | 2010-11-09 | 2012-05-23 | 四川新力光源有限公司 | Impulse LED (light emitting diode) light-emitting device |
| CN102537822A (en) * | 2010-10-05 | 2012-07-04 | 通用汽车环球科技运作有限责任公司 | Motor vehicle headlamp |
| CN102569284A (en) * | 2012-03-16 | 2012-07-11 | 广东科立盈光电技术有限公司 | Novel light-emitting diode (LED) light-emitting chip and LED lamp formed by assembling LED light-emitting chips |
| CN102646675A (en) * | 2012-05-11 | 2012-08-22 | 东莞市科磊得数码光电科技有限公司 | LED (light-emitting diode) light source and substrate thereof |
| CN102969438A (en) * | 2012-12-21 | 2013-03-13 | 左洪波 | Sapphire bracket for LED (Light-Emitting Diode) |
| WO2014063637A1 (en) * | 2012-10-25 | 2014-05-01 | 苏州东山精密制造股份有限公司 | Cob led module and manufacturing method thereof |
| CN103794443A (en) * | 2011-12-31 | 2014-05-14 | 四川虹欧显示器件有限公司 | Heat radiation section bar for plasma screen circuit heat radiation and making method for heat radiation section bar |
| CN104900793A (en) * | 2015-06-02 | 2015-09-09 | 华东师范大学 | Preparation and application of insulating core shell composite structure high in heat conduction and high in reflectivity |
| CN106129222A (en) * | 2016-08-23 | 2016-11-16 | 中国科学院上海光学精密机械研究所 | The high power white LED device of monolithic package |
| WO2018018961A1 (en) * | 2016-07-28 | 2018-02-01 | 广东欧珀移动通信有限公司 | Pcb, method for manufacturing same, and mobile terminal |
| CN107978669A (en) * | 2017-11-15 | 2018-05-01 | 维沃移动通信有限公司 | A kind of area source and preparation method thereof |
| CN110957287A (en) * | 2019-12-17 | 2020-04-03 | 北京师范大学 | High-power radiator and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103078052A (en) * | 2013-01-16 | 2013-05-01 | 东莞市中实创半导体照明有限公司 | Nano-diamond coating package substrate |
-
2009
- 2009-06-08 CN CN2009100450869A patent/CN101545587B/en not_active Expired - Fee Related
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102235642A (en) * | 2010-04-22 | 2011-11-09 | 富士迈半导体精密工业（上海）有限公司 | Backlight module |
| CN102235643A (en) * | 2010-04-22 | 2011-11-09 | 富士迈半导体精密工业（上海）有限公司 | Backlight module |
| CN101924177A (en) * | 2010-08-03 | 2010-12-22 | 陕西科技大学 | Light-emitting diode with light distributing function and preparation method thereof |
| CN102537822B (en) * | 2010-10-05 | 2016-01-27 | 通用汽车环球科技运作有限责任公司 | Car headlamp |
| CN102537822A (en) * | 2010-10-05 | 2012-07-04 | 通用汽车环球科技运作有限责任公司 | Motor vehicle headlamp |
| CN102466146A (en) * | 2010-11-09 | 2012-05-23 | 四川新力光源有限公司 | Impulse LED (light emitting diode) light-emitting device |
| CN102117881A (en) * | 2011-01-31 | 2011-07-06 | 王海军 | Light emitting diode (LED) package structure for improving light emitting rate |
| CN102117881B (en) * | 2011-01-31 | 2013-02-27 | 王海军 | Light emitting diode (LED) package structure for improving light emitting rate |
| CN102398386A (en) * | 2011-08-31 | 2012-04-04 | 浙江工业大学 | Highly heat-conducting electric insulation composite material |
| CN102398386B (en) * | 2011-08-31 | 2015-01-28 | 浙江工业大学 | Highly heat-conducting electric insulation composite material |
| CN103794443A (en) * | 2011-12-31 | 2014-05-14 | 四川虹欧显示器件有限公司 | Heat radiation section bar for plasma screen circuit heat radiation and making method for heat radiation section bar |
| CN102569284A (en) * | 2012-03-16 | 2012-07-11 | 广东科立盈光电技术有限公司 | Novel light-emitting diode (LED) light-emitting chip and LED lamp formed by assembling LED light-emitting chips |
| CN102646675A (en) * | 2012-05-11 | 2012-08-22 | 东莞市科磊得数码光电科技有限公司 | LED (light-emitting diode) light source and substrate thereof |
| WO2014063637A1 (en) * | 2012-10-25 | 2014-05-01 | 苏州东山精密制造股份有限公司 | Cob led module and manufacturing method thereof |
| CN102969438A (en) * | 2012-12-21 | 2013-03-13 | 左洪波 | Sapphire bracket for LED (Light-Emitting Diode) |
| CN104900793A (en) * | 2015-06-02 | 2015-09-09 | 华东师范大学 | Preparation and application of insulating core shell composite structure high in heat conduction and high in reflectivity |
| CN104900793B (en) * | 2015-06-02 | 2017-11-24 | 华东师范大学 | The preparation and application of a kind of insulation core-shell structure of high heat conduction high reflectance |
| WO2018018961A1 (en) * | 2016-07-28 | 2018-02-01 | 广东欧珀移动通信有限公司 | Pcb, method for manufacturing same, and mobile terminal |
| CN106129222A (en) * | 2016-08-23 | 2016-11-16 | 中国科学院上海光学精密机械研究所 | The high power white LED device of monolithic package |
| CN107978669A (en) * | 2017-11-15 | 2018-05-01 | 维沃移动通信有限公司 | A kind of area source and preparation method thereof |
| CN110957287A (en) * | 2019-12-17 | 2020-04-03 | 北京师范大学 | High-power radiator and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101545587B (en) | 2010-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101545587B (en) | A preparation method of high-performance heat-radiating semiconductor planar light source | |
| CN201741721U (en) | Chip-on-board light emitting diode structure | |
| CN108930919B (en) | Wavelength conversion device, preparation method thereof and light source | |
| WO2006108339A1 (en) | Led white light source based on metal wiring board | |
| CN206163517U (en) | LED device of transparent surface alligatoring | |
| CN106972092B (en) | A kind of quantum spot white light LED of high-luminous-efficiency and preparation method thereof | |
| CN102683555A (en) | Packaging structure and packaging method for light-emitting diode | |
| CN101350390B (en) | LED encapsulation structure | |
| CN104022217A (en) | High-power curved surface LED (light-emitting diode) radiating base plate and encapsulating method thereof | |
| TW201126765A (en) | Package structure of compound semiconductor and manufacturing method thereof | |
| CN203309836U (en) | LED light source, backlight source and liquid crystal display device | |
| CN201910445U (en) | Light-emitting diode (LED) packaging structure | |
| CN203521463U (en) | High-thermal conductivity LED-COB packaging substrate | |
| CN209016088U (en) | A kind of high power density COB device | |
| CN1893122A (en) | Led Lighting light-source based on metal aluminium-base material | |
| CN102468395A (en) | Ceramic substrate LED apparatus | |
| CN201944575U (en) | Ceramic substrate LED light source | |
| CN204611421U (en) | A kind of LED lamp tube based on AC-SMT encapsulation | |
| WO2020244490A1 (en) | Light source circuit board and led bulb with low heat generation | |
| CN204118113U (en) | A kind of built-in driving full angle emitting led light source | |
| CN208240726U (en) | A kind of LED illuminating source with substratum transparent | |
| CN102544300A (en) | LED packaging structure | |
| CN207199666U (en) | A kind of flip-chip COB substrates and light source product | |
| CN206619611U (en) | A kind of bare crystalline encapsulates light engine | |
| CN2817077Y (en) | Diode packing structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100901 Termination date: 20210608 |