CN207199666U - A kind of flip-chip COB substrates and light source product - Google Patents
A kind of flip-chip COB substrates and light source product Download PDFInfo
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- CN207199666U CN207199666U CN201721038660.4U CN201721038660U CN207199666U CN 207199666 U CN207199666 U CN 207199666U CN 201721038660 U CN201721038660 U CN 201721038660U CN 207199666 U CN207199666 U CN 207199666U
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Abstract
A kind of flip-chip COB substrates and light source product, the substrate include composite substrate, conductive circuit layer and insulating protective layer.Composite substrate by metal level with boron nitride layer is compound forms；Conductive circuit layer is arranged in the composite substrate and comprising the pad being arranged in pairs；Insulating protective layer is arranged on the same side of the composite substrate and exposes the pad with the conductive circuit layer.Therefore, the utility model comprehensively utilizes the advantage of various materials and obtains having concurrently the upside-down mounting COB substrates of high thermal conductivity, high reflectance, high stability and superior isolation performance and the LED encapsulation structure with high reliability or even bloom extraction efficiency.
Description
Technical field
It the utility model is related to a kind of flip-chip COB substrates and light source product.
Background technology
With the development of LED (Light Emitting Diode, light emitting diode) technology, it is extensive in illuminating industry
Using while, market is to the higher requirements of proposition such as LED luminous flux, light quality, reliability, install convenient, such COB
The packing forms of (chip on board) just arise at the historic moment.
With the continuous development of flip-chip (Flip-Chip) technology, the advantage of the fabric chip will be opened up fully
It is existing.Either COB or Emitter packing forms, the proportion shared by flip chip technology (fct) product will continue to increase.And upside-down mounting
The various performances for the currently used material of package substrate that chip technology is related to for example thermal conductivity, insulating properties, stability with it is anti-
Penetrate between rate and exist conflicting, such as mirror face aluminum material has high thermal conductivity, reflectivity and stability, but its insulation is electrical
Can be poor；Ceramic substrate has high stability and excellent insulating properties, but reflectivity is relatively low.
The structure of the flip-chip COB substrates of generally use mainly has following two at present：1st, ceramic base material (AlN or
Al2O3)+copper foil.Base material AlN and Al2O3Possess good insulating properties and, but wherein Al2O3Thermal conductivity factor only has 20w/
M.k, heat dispersion are poor；AlN is relative to Al2O3With high thermal conductivity, but poor reflectivity and stability deficiency, it is not easy and gold
Category burns altogether, and sintering temperature is high, and manufacturing process is complicated, and current domestic domestic production technology is simultaneously immature, and price is relatively higher is permitted
It is more.2nd, metal base (Cu or Al)+insulation glue-line+copper foil.The copper thermal conductivity factor of copper and aluminium and copper foil layer is all in base material
It is very high, and the thermal conductivity factor of insulating materials epoxy (or organic siliconresin) causes LED core compared to this poor hundred times of two classes material
The heat that piece is sent conduct to insulating barrier can not be quickly spread out so that heat all concentrates on insulating barrier, forms a heat
Bottleneck.Cause the junction temperature of chip can not reduce so that LED light decay is speeded, and service life and reliability reduce.
Utility model content
In view of this, to overcome in the prior art the defects of and deficiency, the utility model provide a kind of flip-chip COB bases
Plate and light source product.
Specifically, the utility model proposes a kind of flip-chip COB substrates, including：
Composite substrate, by metal level (1) with boron nitride layer (2) is compound forms；
Conductive circuit layer (3), it is arranged on the boron nitride layer (2) of the composite substrate and comprising the pad being arranged in pairs；
And
Insulating protective layer (4), it is arranged on the same side of the composite substrate with the conductive circuit layer (3) and exposes described
Pad.
In one preferred embodiment, the material of the metal level (1) of the composite substrate is aluminium or copper, and thickness is 0.5-4 millis
Rice；The thickness of the boron nitride layer (2) of the composite substrate is arranged to 30-100 microns；Boron nitride layer (2) is sunk by sputtering, gas phase
Long-pending mode carries out compound with metal level (1).
In one preferred embodiment, conductive circuit layer (3) material is gold, silver or copper, and its thickness is 2-30 microns.
Specifically, the utility model proposes a kind of light source product using flip-chip COB substrates, it is characterised in that：
It includes flip-chip COB substrates, luminescence chip (6), solder (5) and box dam glue (8) and fluorescent glue (7), and chip (6) is logical
Cross solder (5) to be welded in conductive circuit layer (3), surface periphery is coated with box dam glue (8) on substrate, within box dam glue (8)
Coated with fluorescent glue (7).
From above-mentioned to description of the present utility model, compared with prior art, the utility model has following beneficial to effect
Fruit：
Metal can be very good solve existing flip chip base plate thermal conductivity, insulating properties, reflection with boron nitride composite substrate
Contradictory problems between rate, stability.Comprehensively utilize the advantage of various materials and obtain having high thermal conductivity, high reflectance, height concurrently
Stability and the upside-down mounting COB substrates of superior isolation performance and the LED encapsulation with high reliability even bloom extraction efficiency are tied
Structure.
Metal has the advantage that with boron nitride composite substrate：1), high thermal conductivity：Boron nitride thermal conductivity factor is 60W/
M.k, the thermal conductivity factor of copper can reach 400W/m.K；Composite substrate is than conventional oxidation aluminium base or adds organic insulator aluminium base tool
There is higher thermal conductivity factor (Al2O3 thermal conductivitys are 20W/m.K, and the thermal conductivity factor of epoxy resin is 0.2W/mk)；2), anti-thermal shock
It is functional：The thermal coefficient of expansion of boron nitride is 4.5 × 10-6/ K, the thermal coefficient of expansion of silicon is 4.1 × 10-6/ K, it is sapphire
Thermal coefficient of expansion is 8.8 × 10-6/ K, matching degree are high；3), excellent electrical insulation capability：Boron nitride breakdown voltage 30kv/mm；4)、
Good weatherability：There is extraordinary tolerance performance to environment such as high temperature, high humidity, acidity, high salts.Meanwhile the composite base plate
Realize compound using techniques such as sputtering, vapour depositions, be tightly combined between material, be not easy different materials occur in extreme circumstances
Lamination between matter.
2nd, 30-100 microns are used using 0.5-4 millimeters, boron nitride layer thickness by many experiments, metal layer thickness, should
Thickness range has been taken into account the performance of thermal conductivity, insulating properties and mechanical strength etc. and produced so that its thermal conductivity, insulating properties and
Effect in terms of mechanical strength is best.
Brief description of the drawings
Fig. 1 is a kind of schematic top plan view of flip-chip COB substrates.
Fig. 2 is Fig. 1 A-A schematic cross-sectional views.
Fig. 3 is the schematic top plan view of light source product.
Fig. 4 is Fig. 3 B-B schematic cross-sectional views.
Embodiment
Below by way of embodiment, the utility model will be further described.
Referring to Figures 1 and 2, a kind of flip-chip COB substrates, it includes：Composite substrate, conductive circuit layer 3 and insulation are protected
Sheath 4.
Composite substrate, by metal level 1 with boron nitride layer 2 is compound forms.
In the present embodiment, the material of the metal level 1 of the composite substrate is aluminium or copper, and thickness is 0.5-4 millimeters；It is described
The thickness of the boron nitride layer 2 of composite substrate is arranged to 30-100 microns；Boron nitride layer 2 by way of sputtering, being vapor-deposited with
Metal level 1 carries out compound.
Conductive circuit layer 3, it is arranged on the boron nitride layer 2 of the composite substrate and comprising the pad being arranged in pairs.
In the present embodiment, the material of conductive circuit layer 3 is gold, silver or copper, and its thickness is 2-30 microns.
Insulating protective layer 4, it is arranged on the same side of the composite substrate with the conductive circuit layer 3 and exposes the weldering
Disk.
In the present embodiment, insulating protective layer 4 is arranged at light-emitting zone outer nonconductive region.The insulating protective layer 4 is
Bismaleimide Triazine system material layer and/or low temperature glass glaze layer, the fusing point of the low temperature glass glaze layer are less than 600 DEG C.
Fig. 3 and Fig. 4 are refer to, is a kind of light source product using above-mentioned upside-down mounting COB substrates, it includes the flip-chip
COB substrates, luminescence chip 6, solder 5 and box dam glue 8 and fluorescent glue 7, chip 6 are welded on conductive circuit layer 3 by solder 5
On, surface periphery is coated with box dam glue 8 on substrate, and fluorescent glue 7 is coated with box dam glue 8.
Metal can be very good solve existing flip chip base plate thermal conductivity, insulating properties, reflection with boron nitride composite substrate
Contradictory problems between rate, stability.
Metal has the advantage that with boron nitride composite substrate：1), high thermal conductivity：Boron nitride thermal conductivity factor is 60W/
M.k, the thermal conductivity factor of copper can reach 400W/m.K；Composite substrate is than conventional oxidation aluminium base or adds organic insulator aluminium base tool
There is higher thermal conductivity factor (Al2O3 thermal conductivitys are 20W/m.K, and the thermal conductivity factor of epoxy resin is 0.2W/mk)；2), anti-thermal shock
It is functional：The thermal coefficient of expansion of boron nitride is 4.5 × 10-6/ K, the thermal coefficient of expansion of silicon is 4.1 × 10-6/ K, it is sapphire
Thermal coefficient of expansion is 8.8 × 10-6/ K, matching degree are high；3), excellent electrical insulation capability：Boron nitride breakdown voltage 30kv/mm；4)、
Good weatherability：There is extraordinary tolerance performance to environment such as high temperature, high humidity, acidity, high salts.Meanwhile the composite base plate
Realize compound using techniques such as sputtering, vapour depositions, be tightly combined between material, be not easy different materials occur in extreme circumstances
Lamination between matter, and pass through many experiments, the boron nitride layer thickness is preferable for the heat-conducting effect of 30-100 microns.
Specific embodiment of the present utility model is above are only, but design concept of the present utility model is not limited thereto,
All changes for carrying out unsubstantiality to the utility model using this design, all should belong to the row for invading scope of protection of the utility model
For.
Claims (4)
- A kind of 1. flip-chip COB substrates, it is characterised in that including：Composite substrate, by metal level (1) with boron nitride layer (2) is compound forms；Conductive circuit layer (3), is arranged in the composite substrate and comprising the pad being arranged in pairs；AndInsulating protective layer (4), it is arranged on the same side of the composite substrate with the conductive circuit layer (3) and exposes the weldering Disk.
- A kind of 2. flip-chip COB substrates as claimed in claim 1, it is characterised in that：The metal level (1) of the composite substrate Material be aluminium or copper, and thickness is 0.5-4 millimeters；The thickness of the boron nitride layer (2) of the composite substrate is arranged to 30-100 Micron；Boron nitride layer (2) is carried out compound by way of sputtering, being vapor-deposited with metal level (1).
- A kind of 3. flip-chip COB substrates as claimed in claim 1, it is characterised in that：Conductive circuit layer (3) material is Gold, silver or copper, and its thickness is 2-30 microns.
- A kind of 4. light source product of flip-chip COB substrates using described in claim 1,2 or 3, it is characterised in that：It includes Flip-chip COB substrates, luminescence chip (6), solder (5) and box dam glue (8) and fluorescent glue (7), luminescence chip (6) pass through Solder (5) is welded in conductive circuit layer (3), and surface periphery is coated with box dam glue (8) on substrate, and box dam glue applies within (8) It is covered with fluorescent glue (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721038660.4U CN207199666U (en) | 2017-08-18 | 2017-08-18 | A kind of flip-chip COB substrates and light source product |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721038660.4U CN207199666U (en) | 2017-08-18 | 2017-08-18 | A kind of flip-chip COB substrates and light source product |
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| Publication Number | Publication Date |
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| CN207199666U true CN207199666U (en) | 2018-04-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106100A (en) * | 2019-12-25 | 2020-05-05 | 广东华辉煌光电科技有限公司 | COB light source structure |
-
2017
- 2017-08-18 CN CN201721038660.4U patent/CN207199666U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106100A (en) * | 2019-12-25 | 2020-05-05 | 广东华辉煌光电科技有限公司 | COB light source structure |
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| TR01 | Transfer of patent right |
Effective date of registration: 20191225 Address after: 362000 Optoelectronic Industrial Park, Hutou Town, Anxi County, Quanzhou City, Fujian Province Patentee after: Fujian Xinda Photoelectric Technology Co., Ltd. Address before: Siming District Lingdou road Xiamen 361000 Fujian province No. 610 on the third floor of the building integrated photoelectric XinDa Patentee before: Xiamen XinDa Optoelectronic Science and Technology Research Institute Co., Ltd. |