CN2922135Y - High brightness, high reliability sapphire backing base luminous diode - Google Patents
High brightness, high reliability sapphire backing base luminous diode Download PDFInfo
- Publication number
- CN2922135Y CN2922135Y CNU2006200409423U CN200620040942U CN2922135Y CN 2922135 Y CN2922135 Y CN 2922135Y CN U2006200409423 U CNU2006200409423 U CN U2006200409423U CN 200620040942 U CN200620040942 U CN 200620040942U CN 2922135 Y CN2922135 Y CN 2922135Y
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- chip
- utility
- model
- reliability
- led
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Led Device Packages (AREA)
Abstract
The utility model discloses a high brightness, high reliability sapphire backing base luminous diode, which comprises a chip, a bracket and a housing, wherein the chip comprises a sapphire backing base. The utility model is characterized in that the chip further comprises a reflection metallic layer arranged with the back of the sapphire backing base; a die bond layer arranged between the chip and the bracket. The utility model makes the back of the LED chip sapphire backing base deposited with metallic layer for reflecting, and combines with the die material with fine heat conducting character, so that the LED of the utility model not only has high luminous efficiency, but also evidently improves the reliability of the device. The metallic reflection layer makes the light which is spread to the back mostly reflected to the upper surface and taken out. And the silver glue or solder of the lower of the device plays a good role of heat conducting, so that the temperature rise of the device can be controlled while working, thereby evidently improving the reliability and aging character of the device.
Description
Technical field
The utility model relates to a kind of light-emitting diode, relates generally to chip back metal reflector layer and good heat conductive encapsulating structure.
Background technology
The quality of light-emitting diode (LED) mainly contains two aspects: the one, and its brightness; The 2nd, its reliability.The brightness decision factor of LED comprises: 1) the radiation recombination efficient of the inside charge carrier of chip (that is internal quantum efficiency of device); 2) the interior photon of chip escapes into the efficient (that is getting optical efficiency) in device external freedom space.What the product of the two embodied is the efficient of LED bright dipping, that is external quantum efficiency.Current advanced person's LED technology can realize nearly 50% external quantum efficiency (with reference to people such as M.R.Krames, Appl.Phys.Lett.75,2365 (1999)).On the other hand, the quality of LED depends on its reliability and stability in actual applications to a great extent.Usually the unfailing performance that attracts people's attention comprises: the 1) attenuation ratio of brightness; 2) probability of dead lamp or the like.The packaging technology relation of these characteristics and device is very close.Existing current LED packaging technology mainly comprises three steps: 1) led chip is fixed on the metallic support by solid brilliant material; 2) electrode with led chip passes through to beat mode and the metallic support UNICOM that goes between; 3) with transparent epoxy resin the led chip covering protection is lived, make simultaneously and be beneficial to the lens of getting light and (, wait people's Light emitting diode assembly, U.S. Patent number: 4,358,708) with reference to J.A.Silva.The light decay of LED is that the outer epoxy resin of chip is aging to be caused owing to covering to a great extent, and aging speed depends on the temperature of chip internal.Bad as fruit chip heat radiation in work, temperature will raise, and this will cause, and epoxy resin is aging to be increased the weight of, thereby causes bigger LED light decay.About the dead lamp phenomenon of LED, often find that cause is relevant with the big thermal expansion coefficient difference between encapsulating material and the semiconductor chip material.If the chip cooling condition is relatively poor, chip is being lighted and not light two kinds of temperature difference under the situation bigger, and variation of temperature makes two kinds of big storerooms of expansion coefficient difference produce gravitation, and this gravitation often causes lead-in wire to disconnect, and device opens circuit, thereby causes dead lamp.
With the sapphire is the LED of substrate, mainly be blue light, green glow and add fluorescent material after white light LEDs, the packaging and die bonding material two kinds of selections are arranged usually, the one, adopt transparent insulating cement, the 2nd, adopt elargol or scolder.The former can provide the higher optical efficiency of getting, because the light of propagating toward the transparent sapphire substrate direction can further pass through transparent insulating cement after arriving chip back, reflects on metallic support then.On the contrary, if adopt elargol or scolder as solid brilliant material, the light of considerable part will be absorbed, thereby significantly reduce the brightness of chip.But, on the other hand,, adopt the solid brilliant LED of transparent insulation glue to have the problem of weak heat-dissipating again with respect to elargol or the solid brilliant scheme of scolder.And this LED reliability that often causes such packaged type is not very desirable.
Summary of the invention
The utility model is intended to overcome the above-mentioned problem of mentioning, and a kind of fine heat radiation property is provided, and light extraction efficiency has higher led chip simultaneously.
The Sapphire Substrate based light-emitting diode of high brightness of the present utility model, high reliability, described light-emitting diode comprises chip, support and shell, and described chip comprises Sapphire Substrate, it is characterized in that, described chip further comprises: reflective metal layer is arranged at the described Sapphire Substrate back side; Gu crystal layer is arranged between described chip and the described support.
Key of the present utility model is to be used for reflective metal level at led chip Sapphire Substrate backside deposition, be used solid brilliant material simultaneously with good heat conductive characteristic, not only light extraction efficiency is higher to make LED of the present utility model, and device reliability also is significantly improved.The metal reflective layer makes the light overwhelming majority reflected back upper surface of propagating to the back side also take out.And elargol under it or scolder play good conductive force, make that device temperature rise in work is controlled, and this can significantly improve the reliability and the aging characteristics of device.
Description of drawings
Below, with reference to accompanying drawing, for those skilled in the art that, to the detailed description of the present utility model, above-mentioned and other purposes of the present utility model, feature and advantage will be apparent.
Fig. 1 is a generalized section of finishing the GaN base LED of chip electrode making;
Shown in Figure 2 is to finish LED disk reducing thin of sapphire substrate, then the chip profile schematic diagram of back side evaporated metal reflector layer;
Fig. 3 is the LED generalized section that has the back metal reflector layer that the utility model adopts the good solid brilliant material package of thermal conductivity.
Embodiment
Specify with regard to the example of the utility model below with reference to Fig. 1 to Fig. 3 at the LED of GaN base.
At first as shown in Figure 1, epitaxial growth III-group-III nitride semiconductor plural layers led chip structure comprises: n type GaN layer 2 on Sapphire Substrate 1; Luminescent layer 4; And p type GaN layer 5.Then by photo etched mask, ion etching process etched portions epitaxial loayer zone until exposing n type GaN layer 2 so that draw n electrode 3.Then, the translucent Ni/Au metal level of deposition is made contact electrode 6 on the p electrode.At last, the method making by photo etched mask, physical deposition is used for p electrode pad 7 on the p electrode.
After finishing two electrodes of chip upper surface and making,, make back metal reflector layer 8 by photo etched mask, physical deposition metal level, the method peeled off then, as shown in Figure 2 with thinning back side to 80 ~ 100 micron thickness of the Sapphire Substrate 1 of disk.It mainly is the rate of finished products of cutting apart chip in order to improve that led chip wafer substrate 1 is thinned to 80 ~ 100 microns.After finishing wafer substrate 1 back metal reflector layer and making, utilize the mode of laser scribing and mechanical sliver chip to be divided into the chip of Dan Li.
At last, in the process of led chip encapsulation, adopt solid brilliant material 8 such as elargol or scolder that the chip of said structure is fixed on the metallic support 9, as shown in Figure 3.If Gu 8 employings of brilliant material is scolder, need equipment can the support heating and cooling so that scolder can melt earlier, be solidified then, realize the bonding of support 9 and chip chamber.If the employing elargol, then technology is simple relatively, does not need heated holder.After finishing solid crystalline substance, play lead-in wire 11 and 12, make chip be communicated with support 9 pins.With transparent epoxy resin chip is sealed at last, utilized mould resin to be made the lens shape that is beneficial to bright dipping simultaneously.So far, having the good LED manufacturing process of good light extraction efficiency while reliability finishes.The reflecting metal layer material here comprises aluminium, nickel, silver, palladium.
Though described example of the present utility model by above-mentioned example, it is illustrative.In fact, under the condition of the utility model principle, can also carry out various forms of modifications to it.In addition, scope of the present utility model is limited by appended claims.
Claims (5)
1, the Sapphire Substrate based light-emitting diode of high brightness, high reliability, described light-emitting diode comprises chip, support and shell, and described chip comprises Sapphire Substrate, it is characterized in that, and described chip further comprises:
Reflective metal layer is arranged at the described Sapphire Substrate back side;
Gu crystal layer is arranged between described chip and the described support.
2, the Sapphire Substrate based light-emitting diode of high brightness according to claim 1, high reliability is characterized in that, described chip further comprises:
Some scribe line are arranged on the described reflective metal layer of described substrate back.
3, the Sapphire Substrate based light-emitting diode of high brightness according to claim 1 and 2, high reliability is characterized in that,
Described solid crystal layer comprises elargol.
4, the Sapphire Substrate based light-emitting diode of high brightness according to claim 3, high reliability is characterized in that,
Described solid crystal layer comprises scolder.
5, the Sapphire Substrate based light-emitting diode of high brightness according to claim 4, high reliability is characterized in that,
Described reflecting metal layer material comprises aluminium, nickel, silver, palladium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006200409423U CN2922135Y (en) | 2006-04-11 | 2006-04-11 | High brightness, high reliability sapphire backing base luminous diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006200409423U CN2922135Y (en) | 2006-04-11 | 2006-04-11 | High brightness, high reliability sapphire backing base luminous diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2922135Y true CN2922135Y (en) | 2007-07-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2006200409423U Expired - Lifetime CN2922135Y (en) | 2006-04-11 | 2006-04-11 | High brightness, high reliability sapphire backing base luminous diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2922135Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102000893A (en) * | 2010-10-25 | 2011-04-06 | 惠州志能达光电科技有限公司 | Eutectic microwelding method for LED crystals |
| CN101320775B (en) * | 2008-07-21 | 2012-05-23 | 晶能光电（江西）有限公司 | Encapsulation of silicon substrate LED |
| CN103715311A (en) * | 2012-09-28 | 2014-04-09 | 上海蓝光科技有限公司 | High-current-density and low-voltage-power light emitting diode and manufacturing method thereof |
-
2006
- 2006-04-11 CN CNU2006200409423U patent/CN2922135Y/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320775B (en) * | 2008-07-21 | 2012-05-23 | 晶能光电（江西）有限公司 | Encapsulation of silicon substrate LED |
| CN102000893A (en) * | 2010-10-25 | 2011-04-06 | 惠州志能达光电科技有限公司 | Eutectic microwelding method for LED crystals |
| CN103715311A (en) * | 2012-09-28 | 2014-04-09 | 上海蓝光科技有限公司 | High-current-density and low-voltage-power light emitting diode and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20070711 |
|
| EXPY | Termination of patent right or utility model |