CN101320775B - Encapsulation of silicon substrate LED - Google Patents
Encapsulation of silicon substrate LED Download PDFInfo
- Publication number
- CN101320775B CN101320775B CN2008101071333A CN200810107133A CN101320775B CN 101320775 B CN101320775 B CN 101320775B CN 2008101071333 A CN2008101071333 A CN 2008101071333A CN 200810107133 A CN200810107133 A CN 200810107133A CN 101320775 B CN101320775 B CN 101320775B
- Authority
- CN
- China
- Prior art keywords
- led
- silicon substrate
- chip
- solidifying
- packing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 18
- 239000010703 silicon Substances 0.000 title claims abstract description 18
- 238000005538 encapsulation Methods 0.000 title description 6
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000003292 glue Substances 0.000 claims abstract description 19
- 239000000084 colloidal system Substances 0.000 claims abstract description 14
- 238000012856 packing Methods 0.000 claims abstract description 12
- 238000000465 moulding Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 27
- 239000003822 epoxy resin Substances 0.000 claims description 15
- 229920000647 polyepoxide Polymers 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 239000000843 powder Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 3
- 230000002950 deficient Effects 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000001795 light effect Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 201000009310 astigmatism Diseases 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241001085205 Prenanthella exigua Species 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Images
Landscapes
- Led Device Packages (AREA)
Abstract
The invention discloses a solidifying method in the process of packaging LED. The method comprises: pointing glue, packing the LED chip in the reflective cup with the transparent colloid mixed with the fluorescent powder; baking and solidifying: placing the LED chip with the glue in the solidifying oven for the solidifying and molding; while processing the solidifying, firstly reversely placing the LED chip with the glue, and then placing the chip in the solidifying oven for the solidifying and molding. The method is used for solidifying the fluorescent powder at the upper position of the lighting chip to sufficiently use the fluorescent powder to obtain a great effect of white light for the LED lamp under the situation of not increasing the fluorescent powder on the LED chip.The invention is suitable for the thick LED chip with the silicon substrate, which has the advantages of lower cost, greater effect, simpler procedure, and lower defective rate.
Description
Technical field
The present invention relates to a kind of LED, particularly relate to its method for packing.
Background technology
The LED method for packing of prior art such as one Chinese patent application number by 200620040942.2, name is called in the background technology of patent documentation of " the Sapphire Substrate based light-emitting diode of high brightness, high reliability " and put down in writing.
The method for packing summary of LED is: routing, and welding lead links to each other chip electrode with the support pin; Mix glue, in transparent epoxy resin, sneak into fluorescent material; Point glue is inserted epoxy resin mixed glue in the reflector, and chip is covered, and is formed with the lens shape that is beneficial to astigmatism; Solidify, place curing oven to carry out the baking-curing moulding LED that has put glue; Floating screed is cut the LED lamp after solidifying from the base of support then; Test is tested screening and stepping to the LED lamp.
Adopt only blue light or the green glow that light emitting source sent of gallium nitride material as LED, it adopts silicon materials to compare sapphire as substrate as substrate, has that cost is low, the advantage of handling ease.But the led chip of the silicon substrate of processing usually can be thicker, and its thickness is compared the led chip of Sapphire Substrate and wanted thick a lot of at 60 microns～100 microns generally more than 120 micron.This method is in the encapsulation process of silicon substrate LED; Mainly be in the process of epoxy resin cure; Be blended in the side that fluorescent material in the epoxy resin is deposited in chip easily by conventional proportioning, this causes, and fluorescent material owing to the luminescence chip top is not enough to cause the white light effect of LED bad.
In actual production, to the problems referred to above, in order to improve the white light effect of LED, common way has three kinds:
One, strengthens the dosage of mixed fluorescent powder in epoxy resin.The shortcoming of doing like this is that mostly fluorescent material is that from Japanese import, its cost is very high at present, increases the consumption of fluorescent material, can increase the production cost of LED lamp greatly;
Two, polish thinlyyer silicon substrate so that chip is thinner, process the same thin body substrate of similar Sapphire Substrate, can reduce the accommodation space of sides of chip like this, fluorescent material can more be positioned at the top of light emitting source chip.The shortcoming of doing like this is, prolonged manufacturing process, reduced production efficiency, increased product substandard products probability simultaneously.
Three, in epoxy resin, add the mixing antiprecipitant, to reduce the deposition of fluorescent material in solidification process.The shortcoming of doing like this is to increase cost, reduces the transparency of epoxy resin.
Summary of the invention
Technical problem to be solved by this invention provides the curing in a kind of LED encapsulation process; This method is with solving led chip under the situation that does not increase the fluorescent material consumption; Make fluorescent material can be solidificated in the top position of luminescence chip; To make full use of fluorescent material, let the LED lamp can send white light effect preferably.
In order to solve the problems of the technologies described above, the present invention proposes the curing in a kind of LED encapsulation process, comprising:
The led chip of putting glue is inserted the baking-curing step of carrying out the colloid curing molding in the curing oven;
When carrying out said baking-curing, the transparent colloid encapsulated LED chip that will put glue earlier, is mixed with fluorescent material is inverted, and puts into curing oven again and carries out the colloid curing molding.It is that completion is epitaxially grown on silicon substrate that said LED is preferably.
Preferably: said transparent colloid is an epoxy resin.The temperature of the baking-curing of said epoxy resin is at 120 ℃～150 ℃, and stoving time was at 30 minutes～60 minutes.
Preferably: said transparent colloid is a silica gel.
Preferably: the height of said led chip is between 120 microns～200 microns.
Preferably: also be mixed with diffusant or antisettling agent in the said transparent colloid that is mixed with fluorescent material.
Beneficial effect of the present invention is following:
Compare prior art; The present invention has optimized mode of operation; When the chip behind the glue is carried out baking-curing, earlier entire bracket is inverted to insert again and is cured processing in the oven, just can make fluorescent material be distributed in the top of luminescence chip and can not be deposited in the side of chip.So just can make full use of fluorescent material, make blue light or green light LED send satisfactory white light not increasing the fluorescent material consumption or increasing under the situation of antiprecipitant.Also can the silicon substrate wear down be solved the problem of fluorescent material deposition.
Evidence under the situation of normal fluorescent material consumption, promotes about 40%～60% through being inverted the product ratio that solidifies without the pipe brightness of being inverted the product that solidifies.The present invention implements simply, but has reached very gratifying effect, and particularly suitable is with the thicker led chip of silicon as substrate, and the present invention has that cost is lower, better effects if, operation is simpler, defect rate is lower advantageous feature.
Description of drawings
Fig. 1 is the prior art constructions sketch map.
Fig. 2 is a structural representation of the present invention.
Embodiment
The present invention provides the curing in a kind of LED encapsulation process.
The embodiment of the invention is an example with the led chip of gallium nitride material.Gallium nitride material is the luminescent material of the led chip of blue light and green glow, uses the 8mil blue chip to make white light, and the chip height that contains silicon substrate is 200 μ m.Chip electrode is a stagged electrode structure.
Test one, referring to Fig. 1, make by traditional handicraft:
Routing, welding lead 6 links to each other the electrode of chip 5 with the pin of support 1; Mix glue, in transparent epoxy resin 7, sneak into fluorescent material 4; Point glue is inserted epoxy resin mixed glue in the reflector 2, and chip 5 is covered, and is formed with the lens shape that is beneficial to astigmatism; Solidify, place curing oven to carry out the baking-curing moulding LED that has put glue, the baking temperature of curing is 130 degrees centigrade, and the time is 1 hour; Floating screed is cut the LED lamp after solidifying from the base of support then; Test is tested screening and stepping to the LED lamp.
Observe meeting at the product that above-mentioned traditional handicraft is made and find that fluorescent material 4 is deposited in the side of chip 5 in a large number, as shown in Figure 1, through test, the production tube luminosity is low, colour temperature is high, finished product white light effect is blue partially.
Test two, referring to Fig. 2, make by technology of the present invention:
Step elder generation routing and some glue referring to above-mentioned traditional handicraft.
Solidify then.When carrying out said baking-curing, will put the chip 5 of glue earlier and be inverted, put into curing oven again and carry out the colloid curing molding.The baking temperature that solidifies is 140 degrees centigrade, and the time is 45 minutes.
Floating screed, test are screened and stepping then.
Solidify the back and product is observed found that most of fluorescent material 4 is deposited in the opening part of epoxy resin 7 bottoms, reflector 2, after support is upright, basically all in the top position of chip 5.The blue light that sends of chip can fully excite all fluorescent material in the epoxy resin like this, and making the light that appears epoxy resin is bright white light.
Through the one group of data contrast to above-mentioned two tests, the pipe brightness of finding to use the product of producing after the inventive method promotes about 60% than conventional production methods, is lifted between 40%～60% through the too much evidence pipe brightness above the group.
Claims (8)
1. the method for packing of a silicon substrate LED comprises:
Point glue is encapsulated in led chip in the reflector with the transparent colloid that is mixed with fluorescent material;
Baking-curing is inserted the led chip of putting glue and is carried out the colloid curing molding in the curing oven;
When carrying out said baking-curing, will put the led chip of glue earlier and be inverted, put into curing oven again and carry out the colloid curing molding.
2. the method for packing of silicon substrate LED according to claim 1, it is characterized in that: said transparent colloid is an epoxy resin.
3. the method for packing of silicon substrate LED according to claim 1, it is characterized in that: said transparent colloid is a silica gel.
4. the method for packing of silicon substrate LED according to claim 1, it is characterized in that: the height of said led chip is between 120 microns～200 microns.
5. the method for packing of silicon substrate LED according to claim 1 is characterized in that: also be mixed with diffusant or antisettling agent in the said transparent colloid that is mixed with fluorescent material.
6. the method for packing of silicon substrate LED according to claim 2, it is characterized in that: the temperature of said baking-curing is at 120 ℃～150 ℃, and stoving time was at 30 minutes～60 minutes.
7. according to the method for packing of each described silicon substrate LED in the claim 1 to 6, its spy is: said LED is a silicon substrate LED.
8. the method for packing of silicon substrate LED according to claim 1, it is characterized in that: said led chip is blue light or green glow chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101071333A CN101320775B (en) | 2008-07-21 | 2008-07-21 | Encapsulation of silicon substrate LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101071333A CN101320775B (en) | 2008-07-21 | 2008-07-21 | Encapsulation of silicon substrate LED |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101320775A CN101320775A (en) | 2008-12-10 |
| CN101320775B true CN101320775B (en) | 2012-05-23 |
Family
ID=40180710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101071333A Active CN101320775B (en) | 2008-07-21 | 2008-07-21 | Encapsulation of silicon substrate LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101320775B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101514784B (en) * | 2009-03-19 | 2013-09-18 | 中国计量学院 | High-power light-emitting diode with part light-enhancing structure |
| CN101980385A (en) * | 2010-07-19 | 2011-02-23 | 宁波市瑞康光电有限公司 | Method for encapsulating light-emitting diode (LED), LED and LED illumination device |
| CN102121638A (en) * | 2011-01-14 | 2011-07-13 | 深圳市联诚发科技有限公司 | LED lamp and manufacturing method thereof and corresponding LED display |
| CN102157665A (en) * | 2011-03-22 | 2011-08-17 | 湘能华磊光电股份有限公司 | Light-emitting diode (LED) chip packaging structure and packaging method thereof |
| CN102270713A (en) * | 2011-07-28 | 2011-12-07 | 深圳市聚飞光电股份有限公司 | LED (light emitting diode) packaging method and LED |
| CN103044073A (en) * | 2012-12-11 | 2013-04-17 | 杭州杭科光电股份有限公司 | Surface treatment technology for ceramic substrate of LED (light-emitting diode) area light source |
| CN105505271A (en) * | 2015-11-26 | 2016-04-20 | 东莞市国正精密电子科技有限公司 | High gray scale display LED pouring sealant special for display screens and application process thereof |
| CN107452855B (en) * | 2017-08-17 | 2018-05-29 | 旭宇光电（深圳）股份有限公司 | Paster LED is without mould method for packing |
| CN117012882B (en) * | 2023-09-28 | 2023-12-22 | 天津德高化成新材料股份有限公司 | Packaging method and application of high-ink-color-consistency LED display screen |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1667848A (en) * | 2005-04-04 | 2005-09-14 | 江苏奥雷光电有限公司 | Fluorescent powder coating process for high-power light-emitting diode |
| CN1710724A (en) * | 2004-06-18 | 2005-12-21 | 江苏稳润光电有限公司 | Method for making white-light light-emitting diode |
| CN1783519A (en) * | 2004-11-24 | 2006-06-07 | 深圳市蓝科电子有限公司 | Method for producing white-light diode |
| CN2922135Y (en) * | 2006-04-11 | 2007-07-11 | 杭州士兰明芯科技有限公司 | High brightness, high reliability sapphire backing base luminous diode |
| CN100474646C (en) * | 2007-01-11 | 2009-04-01 | 宁波安迪光电科技有限公司 | Packaging method for white light illuminating diode |
-
2008
- 2008-07-21 CN CN2008101071333A patent/CN101320775B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1710724A (en) * | 2004-06-18 | 2005-12-21 | 江苏稳润光电有限公司 | Method for making white-light light-emitting diode |
| CN1783519A (en) * | 2004-11-24 | 2006-06-07 | 深圳市蓝科电子有限公司 | Method for producing white-light diode |
| CN1667848A (en) * | 2005-04-04 | 2005-09-14 | 江苏奥雷光电有限公司 | Fluorescent powder coating process for high-power light-emitting diode |
| CN2922135Y (en) * | 2006-04-11 | 2007-07-11 | 杭州士兰明芯科技有限公司 | High brightness, high reliability sapphire backing base luminous diode |
| CN100474646C (en) * | 2007-01-11 | 2009-04-01 | 宁波安迪光电科技有限公司 | Packaging method for white light illuminating diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101320775A (en) | 2008-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101320775B (en) | Encapsulation of silicon substrate LED | |
| TW201027797A (en) | Phosphor-converted LED | |
| CN101075655B (en) | Generator of white-light surface light source | |
| CN101714598A (en) | Method for layering and precipitating fluorescent powder in packaging process of white LED | |
| CN101123286A (en) | LED encapsulation structure and method | |
| CN106469775A (en) | Structure of light emitting diode | |
| KR20090067040A (en) | Gel for packaging of emitting diode and use thereof | |
| TW201010125A (en) | White light light-emitting diodes | |
| CN103258940B (en) | A kind of method for packing of all solid state white light emitting diode | |
| CN102593326A (en) | Light-emitting diode (LED) packaging structure and process based on fluorescent powder dispersive excitation technology | |
| CN102163660B (en) | Light emitting diode (LED) packaging process | |
| CN101338865A (en) | Low attenuation high light efficiency LED illuminating apparatus and preparation method | |
| CN201708188U (en) | Ceramic high-power light emitting diode | |
| CN100401536C (en) | Method for making white-light light-emitting diode | |
| CN102709448A (en) | White light LED packaging structure and method | |
| CN101030610A (en) | Large-power light-emitting diodes and its fluorescent-powder coating method | |
| CN103236483A (en) | Light emitting diode encapsulation structure and light emitting diode encapsulation method | |
| CN100492690C (en) | Packaging method for white light LED | |
| CN203288648U (en) | White light-emitting diode with high light extraction efficiency | |
| CN100477307C (en) | Light-emitting diode | |
| CN208753358U (en) | A kind of novel adopting surface mounted LED illuminating source packaging structure | |
| US20100221550A1 (en) | Structure for fluorescent paster | |
| CN101740679B (en) | Fluorescent powder packaging of light-emitting diode | |
| TWM263624U (en) | Improved white-light LED structure | |
| KR20030063832A (en) | White Light-emitting Diode and Method of Manufacturing the Same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20081210 Assignee: Crystal energy photoelectric (Changzhou) Co., Ltd. Assignor: Lattice Power (Jiangxi) Co., Ltd. Contract record no.: 2012360000083 Denomination of invention: Encapsulation of silicon substrate LED Granted publication date: 20120523 License type: Common License Record date: 20121213 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| ASS | Succession or assignment of patent right |
Owner name: JIANGXI LATTICEBRIGHT CORPORATION Free format text: FORMER OWNER: LATTICE POWER (JIANGXI) CORPORATION Effective date: 20140130 |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 330029 NANCHANG, JIANGXI PROVINCE TO: 330096 NANCHANG, JIANGXI PROVINCE |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20140130 Address after: 330096 main building, No. 699, No. 101 North Sihu Road, Nanchang hi tech Zone, Jiangxi Patentee after: Jiangxi Latticebright Corporation Address before: 330029, No. 699 AI Sihu Road, Nanchang hi tech Development Zone, Jiangxi, China Patentee before: Lattice Power (Jiangxi) Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 330096 Main Workshop No. 699 101, Aixi Hubei Road, Nanchang High-tech Zone, Jiangxi Province Patentee after: JIANGXI LATTICEPOWER SEMICONDUCTOR Corp. Address before: 330096 Main Workshop No. 699 101, Aixi Hubei Road, Nanchang High-tech Zone, Jiangxi Province Patentee before: JIANGXI LATTICEBRIGHT Corp. |
|
| CP01 | Change in the name or title of a patent holder | ||
| EC01 | Cancellation of recordation of patent licensing contract |
Assignee: LATTICE POWER (CHANGZHOU) Corp. Assignor: LATTICE POWER (JIANGXI) Corp. Contract record no.: 2012360000083 Date of cancellation: 20220228 |
|
| EC01 | Cancellation of recordation of patent licensing contract |