CN203288648U - White light-emitting diode with high light extraction efficiency - Google Patents
White light-emitting diode with high light extraction efficiency Download PDFInfo
- Publication number
- CN203288648U CN203288648U CN2013202622950U CN201320262295U CN203288648U CN 203288648 U CN203288648 U CN 203288648U CN 2013202622950 U CN2013202622950 U CN 2013202622950U CN 201320262295 U CN201320262295 U CN 201320262295U CN 203288648 U CN203288648 U CN 203288648U
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- fluorescent material
- sapphire substrate
- white light
- emitting diode
- extraction efficiency
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Abstract
The utility model discloses a white light-emitting diode with a high light extraction efficiency. The diode comprises a sapphire substrate, a semiconductor structure epitaxially grown on the sapphire substrate, a solid-state fluorescent material bonded on the back surface of the sapphire substrate, an electrode manufactured on the semiconductor structure, and a base plate welded with a chip, wherein the sapphire substrate is directly bonded with the solid-state fluorescent material. According to the diode, because no medium exists between the solid-state fluorescent material and the sapphire substrate, the total reflection loss is reduced, and the light extraction efficiency is increased.
Description
Technical field
The utility model relates to the LED lighting field, is specifically related to a kind of high optical efficiency white light emitting diode of getting.
Background technology
As a kind of energy-conservation, environmental protection light source, LED be known as after incandescent lamp, fluorescent lamp and high-pressure discharge lamp the 4th generation light source, along with people to the further investigation of III-V compound material and reaching its maturity of metal-organic chemical vapor deposition equipment (MOCVD) growing technology, developed super bright great power LED, the particularly appearance of highlighted GaN blue-ray LED, yttrium aluminium garnet fluorescent powder (YAG:Ce3+) in conjunction with high conversion efficiency has made the dual base color white light LEDs, and LED is skelped to lighting field.The white light LEDs of commercialization has at present reached 100lm/w, and the laboratory level of Cree company has reached 276lm/w.
According to the research to visible light, the white light that people's eyes can be seen can be mixed by two or more monochromatic light.Based on this principle, there are three kinds of methods to obtain white light LEDs, the first is that coating can be by blue-light excited yellow fluorescent powder on the blue led chip, the complementary white light that forms of the gold-tinted that the blue light that chip sends and fluorescent material send; The second applies green and red fluorescence powder on the blue led chip, green glow and the compound white light that obtains of ruddiness that the blue light that sends by chip and fluorescent material send; The third is to apply the fluorescent material of three primary colors or multiple color on purple light or ultraviolet leds chip, utilizes long wave ultraviolet light (370nm-380nm) or the purple light (380nm-410nm) of this chip emission to carry out excitated fluorescent powder, thereby realizes white light emission.
The application pattern of fluorescent material is in the mode of point gum machine point glue as main, idiographic flow is with fluorescent material and the surface that is coated to LED chip after epoxy resin or silica gel mix, there is more problem in the mode that above this glue applies in actual production is controlled, such as the glue amount along with the variation coating of time in the process of a glue is difficult to the problems such as control in the photochromic and colour temperature consistency that causes that gradually changes.
industry is in order to overcome the shortcoming of conventional fluorescent powder packaged type, occurred the fluorescent rare earth ion is mixed in solid transparent material and makes flourescent sheet replacement fluorescent material and epoxy resin, the packaging technology that silica gel mixes, the solid transparent material that for example uses in patent 200910265306.9 is usually by ARTON, COC, COP, PMMA and the optical glass wherein transparent base of any forming materials carry out the formation of fluorescent material plated film, but this method for packing has layer of silica gel between fluorescence coating and LED chip, and the refractive index of layer of silica gel is 1.5, lower than LED chip refractive index 2.4, caused higher loss at total reflection, greatly light can't be from chip outgoing and absorbed by chip and be converted into heat,
In order to overcome the problem that exists in conventional package, be welded on substrate and be packaged into light source after the Direct Bonding of the utility model employing solid state fluorescent material and LED chip, the total reflection loss of having avoided the glue of low-refraction to bring, increased greatly and got optical efficiency, reduce difficulty of processing, improved rate of finished products.
The utility model content
The problem of the utility model in order to exist in the light-emitting diode that solves the conventional package structure, adopted without the medium bonding technology solid state fluorescent material and sapphire epitaxial wafer Direct Bonding have been shaped as LED chip, owing to being without medium between solid state fluorescent material and sapphire epitaxial wafer, therefore reduced loss at total reflection, increased greatly and got optical efficiency, reduce difficulty of processing, improved rate of finished products.
The utility model is realized by the following technical solutions: a kind of high optical efficiency white light emitting diode of getting, comprise Sapphire Substrate, epitaxially grown semiconductor structure on Sapphire Substrate, solid state fluorescent material at the precious substrate back bonding of indigo plant, the electrode of making on semiconductor structure, the substrate of welding chip, the bonding face of described Sapphire Substrate and solid state fluorescent material are without medium, and the light of described solid state fluorescent material is appeared as frosting.
Description of drawings
Accompanying drawing is that height of the present utility model is got optical efficiency white light LED structure schematic diagram, wherein 101 is solid state fluorescent material, 102 is Sapphire Substrate, 103 is the N-shaped semiconductor, and 104 is the p-type semiconductor, and 105 is the p electrode, 106 is the n electrode, 107 is the p electrode metal layer, and 108 is the n electrode metal layer, and 109 is support base.
Embodiment
Describe execution mode of the present utility model in detail below with reference to drawings and Examples, how the application technology means solve technical problem to the utility model whereby, and the implementation procedure of reaching technique effect can fully understand and implement according to this.Need to prove, only otherwise form conflict, each embodiment in the utility model and each feature in each embodiment can mutually combine, and formed technical scheme is all within protection range of the present utility model.
Embodiment 1
a kind of high optical efficiency white light emitting diode of getting, its structural representation as shown in drawings, first provide sapphire long substrate 102, epitaxial growth semiconductor structure on one surface, it comprises N-shaped semiconductor layer 103 from top to down, p-type semiconductor layer 104, with long substrate 102 attenuated polishing to the 50 μ m of sapphire, forming LED chip by Ce3+:YAG potsherd on the vacuum high-temperature bonding 101 on the long substrate of sapphire after attenuated polishing 102 back sides, LED chip is thinned to 100 μ m, one supporting substrate 109 is provided, upper n electrode metal layer 108 and P electrode metal layer 107 distribute on it, make n electrode 106 on N-shaped semiconductor layer 103, make p electrode 105 on p type semiconductor layer 104, with n electrode 106 and p electrode 105 respectively with supporting substrate on n electrode metal layer 108 and p electrode metal layer 107 bondings complete height and get the optical efficiency white light emitting diode.
Claims (2)
1. get the optical efficiency white light emitting diode for one kind high, comprise Sapphire Substrate, epitaxially grown semiconductor structure on Sapphire Substrate, solid state fluorescent material at the precious substrate back bonding of indigo plant, the electrode of making on semiconductor structure, the substrate of welding chip is characterized in that: the bonding face of described Sapphire Substrate and solid state fluorescent material is without medium.
2. diode according to claim 1 is characterized in that: the exiting surface of described solid state fluorescent material is done frosted and is processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013202622950U CN203288648U (en) | 2013-05-15 | 2013-05-15 | White light-emitting diode with high light extraction efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013202622950U CN203288648U (en) | 2013-05-15 | 2013-05-15 | White light-emitting diode with high light extraction efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203288648U true CN203288648U (en) | 2013-11-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013202622950U Expired - Lifetime CN203288648U (en) | 2013-05-15 | 2013-05-15 | White light-emitting diode with high light extraction efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203288648U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226164A (en) * | 2015-09-09 | 2016-01-06 | 南京光宝光电科技有限公司 | The encapsulating structure that white light LEDs is directly SMD |
| CN105485573A (en) * | 2015-12-31 | 2016-04-13 | 广东晶科电子股份有限公司 | High-colour-gamut direct-type LED backlight module |
| CN111699419A (en) * | 2018-02-19 | 2020-09-22 | 日本碍子株式会社 | Optical member and lighting device |
-
2013
- 2013-05-15 CN CN2013202622950U patent/CN203288648U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226164A (en) * | 2015-09-09 | 2016-01-06 | 南京光宝光电科技有限公司 | The encapsulating structure that white light LEDs is directly SMD |
| CN105485573A (en) * | 2015-12-31 | 2016-04-13 | 广东晶科电子股份有限公司 | High-colour-gamut direct-type LED backlight module |
| CN105485573B (en) * | 2015-12-31 | 2019-02-15 | 广东晶科电子股份有限公司 | A kind of high colour gamut direct-light type LED backlight mould group |
| CN111699419A (en) * | 2018-02-19 | 2020-09-22 | 日本碍子株式会社 | Optical member and lighting device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131113 |
|
| CX01 | Expiry of patent term |