CN108987549A - A kind of white chip preparation method - Google Patents

A kind of white chip preparation method Download PDF

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Publication number
CN108987549A
CN108987549A CN201710402435.2A CN201710402435A CN108987549A CN 108987549 A CN108987549 A CN 108987549A CN 201710402435 A CN201710402435 A CN 201710402435A CN 108987549 A CN108987549 A CN 108987549A
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CN
China
Prior art keywords
chip
white
light
silica gel
led chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710402435.2A
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Chinese (zh)
Inventor
肖伟民
朴雨
朴一雨
李珍珍
徐海
丁小军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lattice Power Jiangxi Corp
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Lattice Power Jiangxi Corp
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Publication date
Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp
Priority to CN201710402435.2A priority Critical patent/CN108987549A/en
Publication of CN108987549A publication Critical patent/CN108987549A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements

Abstract

The present invention provides a kind of white chip preparation methods, comprising: fluorescence diaphragm is placed on supporting substrate;On fluorescence membrane surface according to preset rules point transparent silica gel;Blue LED flip chip is placed in transparent silica gel surface and is solidified;Fluorescence diaphragm is cut along Cutting Road;High anti-glue is filled between adjacent LED chip and is solidified;Groove between adjacent LED chip is cut, and single white chip is obtained.The phenomenon that white light color that the White-light LED chip issues is uniform, is not in leakage blue light, and light extraction efficiency is high, light emitting angle is small.

Description

A kind of white chip preparation method
Technical field
The present invention relates to semiconductor light-emitting-diode field, in particular to a kind of white chip preparation method.
Background technique
LED (Light Emitting Diode, light emitting diode) is that one kind can convert electrical energy into consolidating for visible light The semiconductor devices of state, principle of luminosity are electroluminescence, i.e., on PN junction plus after forward current, free electron and hole-recombination And shine, so that electric energy is directly converted into luminous energy.LED, especially white light LEDs, as a kind of new lighting source material quilt Be widely applied, it has many advantages, such as, and reaction speed is fast, shock resistance is good, the service life is long, energy conservation and environmental protection and it is fast-developing, at present by It is widely used in the fields such as beautification of landscape and indoor and outdoor lighting.
The preparation of white light LEDs is mainly made using the technique for coating yellow fluorescent powder on blue chip at present, i.e., Layer of fluorescent powder glue is directly applied or sprays on blue-light LED chip surface, there are following two by White-light LED chip made from above-mentioned technique A problem: first is that only coating layer of fluorescent powder glue on blue-light LED chip surface, and chip sides and being not coated with fluorescent glue, Therefore it will appear chip surrounding leakage blue light phenomenon, cause the white light LED part white light color being finally packaged into uneven, often band There are yellow or blue hot spot;Second is that the White-light LED chip of above method preparation is that five faces go out light, most of side light becomes invalid The utilization rate of light, light does not effectively improve.In addition, requiring LED product that there is miniaturization, integrated, light emitting anger some The application field of the features such as smaller is spent, for example the products such as flash lamp, television backlight, the LED chip of conventional method preparation is up to not To the requirement in these fields.Therefore, it is necessary to provide the new LED core piece preparation method of one kind to solve the above problems.
Summary of the invention
In view of the above-mentioned problems, the present invention is intended to provide a kind of white chip preparation method, the white chip of preparation issue White light color it is uniform, the phenomenon that being not in leakage blue light, and light extraction efficiency is high, light emitting angle is small.
In order to achieve the above objectives, technical solution provided by the invention is as follows:
A kind of white chip preparation method characterized by comprising
Fluorescence diaphragm is placed on supporting substrate;
On fluorescence membrane surface according to preset rules point transparent silica gel;
Blue LED flip chip is placed in transparent silica gel surface and is solidified;
Fluorescence diaphragm is cut along Cutting Road;
High anti-glue is filled between adjacent LED chip and is solidified;
Groove between adjacent LED chip is cut, and single white chip is obtained.
It is further preferred that upside-down mounting blue chip surface includes metal electrode, the thickness range of the metal electrode It is 10~200 μm.
It is further preferred that forming metal electrode on the LED chip surface using the method for plating or chemical plating.
It is further preferred that the transparent silica gel be set in arcuation in the fluorescence membrane surface towards fluorescence diaphragm it is described LED chip surrounding.
It is further preferred that the altitude range of the transparent silica gel is 10~150 μ along any side of the LED chip M, width range are 10~1000 μm.
The white chip of white chip preparation method preparation provided by the invention, surrounding are provided with high anti-glue (high reflectance White glue), it is reflected back from the light that side issues by the anti-glue of the height with this, realizes that single side goes out the purpose of light.In addition, in upside-down mounting blue light LED chip and fluorescence diaphragm connect surface equipped with arcuation transparent silica gel, same with the anti-glue of height that this is filled in transparent silica gel surface Arcuation is showed, the setting of the structure is so that the light that blue LED flip chip side issues is reflected back as effective light from hair Smooth surface output, to substantially increase the light extraction efficiency of white chip.Finally, the present invention provides compared to existing white chip White chip be provided simultaneously with hot spot more evenly, thermal conductivity is good, light emitting angle is small, the advantages such as at low cost, substantially increase LED Application range and the convenience that uses, the application field for especially requiring light emitting angle small, such as LED backlight field.
Detailed description of the invention
Fig. 1 to Fig. 4 is white chip preparation process schematic diagram in the present invention;
Identifier declaration in figure:
1- blue LED flip chip, 2- transparent silica gel, 3- fluorescence diaphragm, 4- supporting substrate, the anti-glue of 5- high.
Specific embodiment
The present embodiment uses following steps:
It prepares and selects satisfactory fluorescence diaphragm 3, the plating metal conduct on the electrode of blue LED flip chip 1 Metal electrode.Fluorescence diaphragm 3 is placed on supporting substrate 4, then on 3 surface of fluorescence diaphragm according to preset rules point transparent silicon Glue such as uniformly puts the identical transparent silica gel 2 of size on the surface of fluorescence diaphragm 3;Later, the upside-down mounting for being prepared for metal electrode is blue Light LED chip 1 (not preparing one side surface of metal electrode) is placed on the position of transparent silica gel of fluorescence diaphragm midpoint, and It is toasted 2 hours at a temperature of 150 °, makes the transparent silica gel 2 of blue LED flip chip surrounded surface that lower concave arc shape, such as Fig. 1 be presented It is shown;
The distance between cut fluorescence diaphragm 3 along Cutting Road, and expand adjacent blue LED flip chip 1, such as Fig. 2 It is shown;
Along support substrate surface and the high anti-glue of transparent silica gel surface filling between adjacent two blue LED flip chips 1 5, until the height of high reflection glue 5 is consistent with metal electrode height, as shown in Figure 3;
It is cut along the groove between adjacent two blue LED flip chips 1, obtains single high brightness single side and go out light White chip, such as Fig. 4.

Claims (5)

1. a kind of white chip preparation method, which is characterized in that include: in the white chip preparation method
Fluorescence diaphragm is placed on supporting substrate;
On fluorescence membrane surface according to preset rules point transparent silica gel;
Blue LED flip chip is placed in transparent silica gel surface and is solidified;
Fluorescence diaphragm is cut along Cutting Road;
High anti-glue is filled between adjacent LED chip and is solidified;
Groove between adjacent LED chip is cut, and single white chip is obtained.
2. white chip preparation method as described in claim 1, which is characterized in that upside-down mounting blue chip surface includes gold Belong to electrode, the thickness range of the metal electrode is 10~200 μm.
3. white chip preparation method as claimed in claim 2, which is characterized in that the method using plating or chemical plating exists The LED chip surface forms metal electrode.
4. the white chip as described in claims 1 or 2 or 3, which is characterized in that the transparent silica gel is in the fluorescence diaphragm watch The LED chip surrounding is set in arcuation facing towards fluorescence diaphragm.
5. white chip as claimed in claim 4, which is characterized in that along any side of the LED chip, the transparent silicon The altitude range of glue is 10~150 μm, and width range is 10~1000 μm.
CN201710402435.2A 2017-06-01 2017-06-01 A kind of white chip preparation method Pending CN108987549A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710402435.2A CN108987549A (en) 2017-06-01 2017-06-01 A kind of white chip preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710402435.2A CN108987549A (en) 2017-06-01 2017-06-01 A kind of white chip preparation method

Publications (1)

Publication Number Publication Date
CN108987549A true CN108987549A (en) 2018-12-11

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Country Status (1)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110297358A (en) * 2019-06-28 2019-10-01 厦门天马微电子有限公司 A kind of backlight module and curved face display panel
CN111092142A (en) * 2019-12-30 2020-05-01 江西省晶能半导体有限公司 White light LED chip and preparation method thereof
CN113764547A (en) * 2021-08-30 2021-12-07 东莞市中麒光电技术有限公司 Manufacturing method of Mini-LED device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204834670U (en) * 2015-07-10 2015-12-02 晶能光电(江西)有限公司 White light LED chip package structure
CN204857774U (en) * 2015-07-10 2015-12-09 江西省晶瑞光电有限公司 White light LED packaging structure
CN105720166A (en) * 2014-12-05 2016-06-29 晶能光电(江西)有限公司 White-light LED chip preparation method
CN106129231A (en) * 2015-05-05 2016-11-16 新世纪光电股份有限公司 Light-emitting device and preparation method thereof
US20170054062A1 (en) * 2015-08-21 2017-02-23 Nichia Corporation Method of manufacturing light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105720166A (en) * 2014-12-05 2016-06-29 晶能光电(江西)有限公司 White-light LED chip preparation method
CN106129231A (en) * 2015-05-05 2016-11-16 新世纪光电股份有限公司 Light-emitting device and preparation method thereof
CN204834670U (en) * 2015-07-10 2015-12-02 晶能光电(江西)有限公司 White light LED chip package structure
CN204857774U (en) * 2015-07-10 2015-12-09 江西省晶瑞光电有限公司 White light LED packaging structure
US20170054062A1 (en) * 2015-08-21 2017-02-23 Nichia Corporation Method of manufacturing light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110297358A (en) * 2019-06-28 2019-10-01 厦门天马微电子有限公司 A kind of backlight module and curved face display panel
CN111092142A (en) * 2019-12-30 2020-05-01 江西省晶能半导体有限公司 White light LED chip and preparation method thereof
CN113764547A (en) * 2021-08-30 2021-12-07 东莞市中麒光电技术有限公司 Manufacturing method of Mini-LED device

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Application publication date: 20181211

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