CN108987549A - A kind of white chip preparation method - Google Patents
A kind of white chip preparation method Download PDFInfo
- Publication number
- CN108987549A CN108987549A CN201710402435.2A CN201710402435A CN108987549A CN 108987549 A CN108987549 A CN 108987549A CN 201710402435 A CN201710402435 A CN 201710402435A CN 108987549 A CN108987549 A CN 108987549A
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- Prior art keywords
- chip
- white
- light
- silica gel
- led chip
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000741 silica gel Substances 0.000 claims abstract description 16
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000012528 membrane Substances 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000000605 extraction Methods 0.000 abstract description 3
- 239000000843 powder Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of white chip preparation methods, comprising: fluorescence diaphragm is placed on supporting substrate；On fluorescence membrane surface according to preset rules point transparent silica gel；Blue LED flip chip is placed in transparent silica gel surface and is solidified；Fluorescence diaphragm is cut along Cutting Road；High anti-glue is filled between adjacent LED chip and is solidified；Groove between adjacent LED chip is cut, and single white chip is obtained.The phenomenon that white light color that the White-light LED chip issues is uniform, is not in leakage blue light, and light extraction efficiency is high, light emitting angle is small.
Description
Technical field
The present invention relates to semiconductor light-emitting-diode field, in particular to a kind of white chip preparation method.
Background technique
LED (Light Emitting Diode, light emitting diode) is that one kind can convert electrical energy into consolidating for visible light
The semiconductor devices of state, principle of luminosity are electroluminescence, i.e., on PN junction plus after forward current, free electron and hole-recombination
And shine, so that electric energy is directly converted into luminous energy.LED, especially white light LEDs, as a kind of new lighting source material quilt
Be widely applied, it has many advantages, such as, and reaction speed is fast, shock resistance is good, the service life is long, energy conservation and environmental protection and it is fast-developing, at present by
It is widely used in the fields such as beautification of landscape and indoor and outdoor lighting.
The preparation of white light LEDs is mainly made using the technique for coating yellow fluorescent powder on blue chip at present, i.e.,
Layer of fluorescent powder glue is directly applied or sprays on blue-light LED chip surface, there are following two by White-light LED chip made from above-mentioned technique
A problem: first is that only coating layer of fluorescent powder glue on blue-light LED chip surface, and chip sides and being not coated with fluorescent glue,
Therefore it will appear chip surrounding leakage blue light phenomenon, cause the white light LED part white light color being finally packaged into uneven, often band
There are yellow or blue hot spot；Second is that the White-light LED chip of above method preparation is that five faces go out light, most of side light becomes invalid
The utilization rate of light, light does not effectively improve.In addition, requiring LED product that there is miniaturization, integrated, light emitting anger some
The application field of the features such as smaller is spent, for example the products such as flash lamp, television backlight, the LED chip of conventional method preparation is up to not
To the requirement in these fields.Therefore, it is necessary to provide the new LED core piece preparation method of one kind to solve the above problems.
Summary of the invention
In view of the above-mentioned problems, the present invention is intended to provide a kind of white chip preparation method, the white chip of preparation issue
White light color it is uniform, the phenomenon that being not in leakage blue light, and light extraction efficiency is high, light emitting angle is small.
In order to achieve the above objectives, technical solution provided by the invention is as follows:
A kind of white chip preparation method characterized by comprising
Fluorescence diaphragm is placed on supporting substrate；
On fluorescence membrane surface according to preset rules point transparent silica gel；
Blue LED flip chip is placed in transparent silica gel surface and is solidified；
Fluorescence diaphragm is cut along Cutting Road；
High anti-glue is filled between adjacent LED chip and is solidified；
Groove between adjacent LED chip is cut, and single white chip is obtained.
It is further preferred that upside-down mounting blue chip surface includes metal electrode, the thickness range of the metal electrode
It is 10~200 μm.
It is further preferred that forming metal electrode on the LED chip surface using the method for plating or chemical plating.
It is further preferred that the transparent silica gel be set in arcuation in the fluorescence membrane surface towards fluorescence diaphragm it is described
LED chip surrounding.
It is further preferred that the altitude range of the transparent silica gel is 10~150 μ along any side of the LED chip
M, width range are 10~1000 μm.
The white chip of white chip preparation method preparation provided by the invention, surrounding are provided with high anti-glue (high reflectance
White glue), it is reflected back from the light that side issues by the anti-glue of the height with this, realizes that single side goes out the purpose of light.In addition, in upside-down mounting blue light
LED chip and fluorescence diaphragm connect surface equipped with arcuation transparent silica gel, same with the anti-glue of height that this is filled in transparent silica gel surface
Arcuation is showed, the setting of the structure is so that the light that blue LED flip chip side issues is reflected back as effective light from hair
Smooth surface output, to substantially increase the light extraction efficiency of white chip.Finally, the present invention provides compared to existing white chip
White chip be provided simultaneously with hot spot more evenly, thermal conductivity is good, light emitting angle is small, the advantages such as at low cost, substantially increase LED
Application range and the convenience that uses, the application field for especially requiring light emitting angle small, such as LED backlight field.
Detailed description of the invention
Fig. 1 to Fig. 4 is white chip preparation process schematic diagram in the present invention；
Identifier declaration in figure:
1- blue LED flip chip, 2- transparent silica gel, 3- fluorescence diaphragm, 4- supporting substrate, the anti-glue of 5- high.
Specific embodiment
The present embodiment uses following steps:
It prepares and selects satisfactory fluorescence diaphragm 3, the plating metal conduct on the electrode of blue LED flip chip 1
Metal electrode.Fluorescence diaphragm 3 is placed on supporting substrate 4, then on 3 surface of fluorescence diaphragm according to preset rules point transparent silicon
Glue such as uniformly puts the identical transparent silica gel 2 of size on the surface of fluorescence diaphragm 3；Later, the upside-down mounting for being prepared for metal electrode is blue
Light LED chip 1 (not preparing one side surface of metal electrode) is placed on the position of transparent silica gel of fluorescence diaphragm midpoint, and
It is toasted 2 hours at a temperature of 150 °, makes the transparent silica gel 2 of blue LED flip chip surrounded surface that lower concave arc shape, such as Fig. 1 be presented
It is shown；
The distance between cut fluorescence diaphragm 3 along Cutting Road, and expand adjacent blue LED flip chip 1, such as Fig. 2
It is shown；
Along support substrate surface and the high anti-glue of transparent silica gel surface filling between adjacent two blue LED flip chips 1
5, until the height of high reflection glue 5 is consistent with metal electrode height, as shown in Figure 3；
It is cut along the groove between adjacent two blue LED flip chips 1, obtains single high brightness single side and go out light
White chip, such as Fig. 4.
Claims (5)
1. a kind of white chip preparation method, which is characterized in that include: in the white chip preparation method
Fluorescence diaphragm is placed on supporting substrate；
On fluorescence membrane surface according to preset rules point transparent silica gel；
Blue LED flip chip is placed in transparent silica gel surface and is solidified；
Fluorescence diaphragm is cut along Cutting Road；
High anti-glue is filled between adjacent LED chip and is solidified；
Groove between adjacent LED chip is cut, and single white chip is obtained.
2. white chip preparation method as described in claim 1, which is characterized in that upside-down mounting blue chip surface includes gold
Belong to electrode, the thickness range of the metal electrode is 10~200 μm.
3. white chip preparation method as claimed in claim 2, which is characterized in that the method using plating or chemical plating exists
The LED chip surface forms metal electrode.
4. the white chip as described in claims 1 or 2 or 3, which is characterized in that the transparent silica gel is in the fluorescence diaphragm watch
The LED chip surrounding is set in arcuation facing towards fluorescence diaphragm.
5. white chip as claimed in claim 4, which is characterized in that along any side of the LED chip, the transparent silicon
The altitude range of glue is 10~150 μm, and width range is 10~1000 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710402435.2A CN108987549A (en) | 2017-06-01 | 2017-06-01 | A kind of white chip preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710402435.2A CN108987549A (en) | 2017-06-01 | 2017-06-01 | A kind of white chip preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108987549A true CN108987549A (en) | 2018-12-11 |
Family
ID=64502265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710402435.2A Pending CN108987549A (en) | 2017-06-01 | 2017-06-01 | A kind of white chip preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108987549A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830474A (en) * | 2018-12-17 | 2019-05-31 | 江西省晶能半导体有限公司 | Glory LED core piece preparation method and glory LED lamp bead preparation method |
| CN110297358A (en) * | 2019-06-28 | 2019-10-01 | 厦门天马微电子有限公司 | A kind of backlight module and curved face display panel |
| CN111092142A (en) * | 2019-12-30 | 2020-05-01 | 江西省晶能半导体有限公司 | White light LED chip and preparation method thereof |
| CN113764547A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Manufacturing method of Mini-LED device |
| CN115930173A (en) * | 2023-01-10 | 2023-04-07 | 硅能光电半导体(广州)有限公司 | Petal-shaped LED lamp bead and control method thereof |
| CN116565078A (en) * | 2023-07-07 | 2023-08-08 | 天津德高化成新材料股份有限公司 | White light CSP (chip scale package) suitable for high-power single-sided light emission and packaging method thereof |
| CN117577764A (en) * | 2024-01-16 | 2024-02-20 | 长春希龙显示技术有限公司 | Packaged white light device and preparation method thereof |
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| CN204834670U (en) * | 2015-07-10 | 2015-12-02 | 晶能光电（江西）有限公司 | White light LED chip package structure |
| CN204857774U (en) * | 2015-07-10 | 2015-12-09 | 江西省晶瑞光电有限公司 | White light LED packaging structure |
| CN105720166A (en) * | 2014-12-05 | 2016-06-29 | 晶能光电（江西）有限公司 | White-light LED chip preparation method |
| CN106129231A (en) * | 2015-05-05 | 2016-11-16 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
| US20170054062A1 (en) * | 2015-08-21 | 2017-02-23 | Nichia Corporation | Method of manufacturing light emitting device |
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2017
- 2017-06-01 CN CN201710402435.2A patent/CN108987549A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720166A (en) * | 2014-12-05 | 2016-06-29 | 晶能光电（江西）有限公司 | White-light LED chip preparation method |
| CN106129231A (en) * | 2015-05-05 | 2016-11-16 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN204834670U (en) * | 2015-07-10 | 2015-12-02 | 晶能光电（江西）有限公司 | White light LED chip package structure |
| CN204857774U (en) * | 2015-07-10 | 2015-12-09 | 江西省晶瑞光电有限公司 | White light LED packaging structure |
| US20170054062A1 (en) * | 2015-08-21 | 2017-02-23 | Nichia Corporation | Method of manufacturing light emitting device |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830474A (en) * | 2018-12-17 | 2019-05-31 | 江西省晶能半导体有限公司 | Glory LED core piece preparation method and glory LED lamp bead preparation method |
| CN109830474B (en) * | 2018-12-17 | 2023-07-11 | 江西省晶能半导体有限公司 | Preparation method of colored light LED chip and preparation method of colored light LED lamp beads |
| CN110297358A (en) * | 2019-06-28 | 2019-10-01 | 厦门天马微电子有限公司 | A kind of backlight module and curved face display panel |
| CN111092142A (en) * | 2019-12-30 | 2020-05-01 | 江西省晶能半导体有限公司 | White light LED chip and preparation method thereof |
| CN113764547A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Manufacturing method of Mini-LED device |
| CN115930173A (en) * | 2023-01-10 | 2023-04-07 | 硅能光电半导体(广州)有限公司 | Petal-shaped LED lamp bead and control method thereof |
| CN116565078A (en) * | 2023-07-07 | 2023-08-08 | 天津德高化成新材料股份有限公司 | White light CSP (chip scale package) suitable for high-power single-sided light emission and packaging method thereof |
| CN116565078B (en) * | 2023-07-07 | 2023-09-15 | 天津德高化成新材料股份有限公司 | White light CSP (chip scale package) suitable for high-power single-sided light emission and packaging method thereof |
| CN117577764A (en) * | 2024-01-16 | 2024-02-20 | 长春希龙显示技术有限公司 | Packaged white light device and preparation method thereof |
| CN117577764B (en) * | 2024-01-16 | 2024-05-03 | 长春希龙显示技术有限公司 | Packaged white light device and preparation method thereof |
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| PB01 | Publication | ||
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Application publication date: 20181211 |