CN108987556A - A kind of white chip - Google Patents

A kind of white chip Download PDF

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Publication number
CN108987556A
CN108987556A CN201710402474.2A CN201710402474A CN108987556A CN 108987556 A CN108987556 A CN 108987556A CN 201710402474 A CN201710402474 A CN 201710402474A CN 108987556 A CN108987556 A CN 108987556A
Authority
CN
China
Prior art keywords
chip
led chip
white
fluorescence diaphragm
silica gel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710402474.2A
Other languages
Chinese (zh)
Inventor
肖伟民
朴雨
朴一雨
李珍珍
徐海
丁小军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lattice Power Jiangxi Corp
Original Assignee
Lattice Power Jiangxi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp
Priority to CN201710402474.2A priority Critical patent/CN108987556A/en
Publication of CN108987556A publication Critical patent/CN108987556A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin

Abstract

The present invention provides a kind of white chips, comprising: metal electrode, blue LED flip chip, transparent silica gel, high anti-glue and fluorescence diaphragm;Wherein, metal electrode is set to the lower surface of LED chip;Fluorescence diaphragm is set to the upper surface of LED chip, and the area of fluorescence diaphragm is greater than the area on LED chip surface;Transparent silica gel is set to LED chip surrounding in arcuation in fluorescence membrane surface;High anti-glue is set to LED chip and fluorescence diaphragm surrounding along transparent silica gel surface.The phenomenon that white light color that the White-light LED chip issues is uniform, is not in leakage blue light, and light extraction efficiency is high, light emitting angle is small.

Description

A kind of white chip
Technical field
The present invention relates to semiconductor light-emitting-diode field, in particular to a kind of white chip.
Background technique
LED (Light Emitting Diode, light emitting diode) is that one kind can convert electrical energy into consolidating for visible light The semiconductor devices of state, principle of luminosity are electroluminescence, i.e., on PN junction plus after forward current, free electron and hole-recombination And shine, so that electric energy is directly converted into luminous energy.LED, especially white light LEDs, as a kind of new lighting source material quilt Be widely applied, it has many advantages, such as, and reaction speed is fast, shock resistance is good, the service life is long, energy conservation and environmental protection and it is fast-developing, at present by It is widely used in the fields such as beautification of landscape and indoor and outdoor lighting.
The preparation of white light LEDs is mainly made using the technique for coating yellow fluorescent powder on blue chip at present, i.e., Layer of fluorescent powder glue is directly applied or sprayed on blue-light LED chip surface, is existed by White-light LED chip made from above-mentioned technique as follows Two problems: first is that only coating layer of fluorescent powder glue on blue-light LED chip surface, and chip sides and it is not coated with fluorescence Glue, therefore will appear chip surrounding leakage blue light phenomenon, cause the white light LED part white light color being finally packaged into uneven, it is past Toward with yellow or blue hot spot;Second is that the White-light LED chip of above method preparation is that five faces go out light, most of side light becomes The utilization rate of invalid light, light does not effectively improve.In addition, requiring LED product that there is miniaturization, integrated, hair some The application field for the features such as angular is smaller, for example the products such as flash lamp, television backlight, the LED chip of conventional method preparation are The requirement in these fields is not achieved.Therefore, it is necessary to provide the new LED core piece preparation method of one kind to solve the above problems.
Summary of the invention
In view of the above-mentioned problems, the white light color issued is uniform the present invention is intended to provide a kind of white chip, be not in The phenomenon that leaking blue light, and light extraction efficiency is high, light emitting angle is small.
In order to achieve the above objectives, technical solution provided by the invention is as follows:
A kind of white chip, comprising: metal electrode, blue LED flip chip, transparent silica gel, high anti-glue and fluorescent film Piece;Wherein,
The metal electrode is set to the lower surface of the LED chip;
The fluorescence diaphragm is set to the upper surface of the LED chip, and the area of the fluorescence diaphragm is greater than LED chip The area on surface;
The transparent silica gel is set to the LED chip surrounding in arcuation in the fluorescence membrane surface;
The anti-glue of height is set to the LED chip and fluorescence diaphragm surrounding along the transparent silica gel surface.
It is further preferred that the thickness range of the metal electrode is 10~200 μm.
It is further preferred that forming gold on the blue LED flip chip surface using the method for plating or chemical plating Belong to electrode.
It is further preferred that the fluorescence diaphragm is set to the upper surface of the LED chip, and the area of the fluorescence diaphragm Greater than the area on LED chip surface, the fluorescence diaphragm is arranged along the center of the LED chip.
It is further preferred that the transparent silica gel be set in arcuation in the fluorescence membrane surface towards fluorescence diaphragm it is described LED chip surrounding.
It is further preferred that the altitude range of the transparent silica gel is 10~150 along any side of the LED chip μm, width range is 10~1000 μm.
White chip provided by the invention is provided with high anti-glue (high reflectance white glue) by surrounding, is issued with this from side Light reflected back by the anti-glue of the height, realize that single side goes out the purpose of light.In addition, in upside-down mounting blue-ray LED chip and fluorescence diaphragm phase Surface is connect equipped with arcuation transparent silica gel, arcuation is showed equally with the anti-glue of height that this is filled in transparent silica gel surface, the structure It is arranged so that the light that blue LED flip chip side issues is reflected back as effective light from light-emitting surface output, to mention significantly The high light extraction efficiency of white chip.Finally, white chip provided by the invention is provided simultaneously with compared to existing white chip Hot spot is more evenly, thermal conductivity is good, light emitting angle is small, the advantages such as at low cost, substantially increases the application range of LED and uses just Victory, the application field for especially requiring light emitting angle small, such as LED backlight field.
Detailed description of the invention
Fig. 1 to Fig. 4 is the side schematic view of preparation process in embodiment one;
Fig. 5 to Figure 10 is the side schematic view of preparation process in embodiment two.
Identifier declaration in figure:
1- blue LED flip chip, 2- transparent silica gel, 3- fluorescence diaphragm, 4- supporting substrate, the anti-glue of 5- high.
Specific embodiment
Embodiment one
The present embodiment uses following steps:
It prepares and selects satisfactory fluorescence diaphragm 3, the plating metal conduct on the electrode of blue LED flip chip 1 Metal electrode.Fluorescence diaphragm 3 is placed on supporting substrate 4, then on 3 surface of fluorescence diaphragm according to preset rules point transparent silicon Glue such as uniformly puts the identical transparent silica gel 2 of size on the surface of fluorescence diaphragm 3;Later, the upside-down mounting for being prepared for metal electrode is blue Light LED chip 1 (not preparing one side surface of metal electrode) is placed on the position of transparent silica gel of fluorescence diaphragm midpoint, and 150 ° at a temperature of toast 2 hours, make the transparent silica gel 2 of blue LED flip chip surrounded surface that lower concave arc shape be presented, such as scheme Shown in 1;
The distance between cut fluorescence diaphragm 3 along Cutting Road, and expand adjacent blue LED flip chip 1, such as Fig. 2 It is shown;
Along support substrate surface and the high anti-glue of transparent silica gel surface filling between adjacent two blue LED flip chips 1 5, until the height of high reflection glue 5 is consistent with metal electrode height, as shown in Figure 3;
It is cut along the groove between adjacent two blue LED flip chips 1, obtains single high brightness single side and go out light White chip, such as Fig. 4.
Embodiment two
The present embodiment uses following steps:
Satisfactory fluorescence diaphragm 3 is prepared and selected, powers on metallized electrode in the electrode of blue LED flip chip 1. Upside-down mounting indigo plant port LED chip 1 is arranged on supporting substrate 4 with array manner;Between adjacent two blue LED flip chips 1 Transparent silica gel 2 is printed, and 150 degree are toasted 2 hours, makes the transparent silica gel 2 of blue LED flip chip surrounded surface that lower concave arc be presented Shape, as shown in Figure 5;
The high anti-glue 5 of transparent silica gel surface filling between adjacent two blue LED flip chips 1, until described high anti- The height of injection 5 is consistent with the metal electrode height, as shown in Figure 6;
Supporting substrate 4 is replaced with fluorescence diaphragm 3, as shown in Figure 7;
Along the high anti-glue 5 of Cutting Road cutting and fluorescence diaphragm 3, and expand between adjacent blue LED flip chip 1 Distance is placed in support substrate 4, as shown in Figure 8;
Along support substrate surface and the high anti-glue of transparent silica gel surface filling between adjacent two blue LED flip chips 1 5, until the height of high reflection glue 5 is consistent with metal electrode height, as shown in Figure 9;
It is cut along the groove between adjacent two blue LED flip chips 1, obtains single high brightness single side and go out light White chip, such as Figure 10.

Claims (6)

1. a kind of white chip, which is characterized in that include: in the white chip metal electrode, blue LED flip chip, thoroughly Bright silica gel, high anti-glue and fluorescence diaphragm;Wherein,
The metal electrode is set to the lower surface of the LED chip;
The fluorescence diaphragm is set to the upper surface of the LED chip, and the area of the fluorescence diaphragm is greater than LED chip surface Area;
The transparent silica gel is set to the LED chip surrounding in arcuation in the fluorescence membrane surface;
The anti-glue of height is set to the LED chip and fluorescence diaphragm surrounding along the transparent silica gel surface.
2. white chip as described in claim 1, which is characterized in that the thickness range of the metal electrode is 10~200 μm.
3. white chip as claimed in claim 2, which is characterized in that using the method for plating or chemical plating in the upside-down mounting Blue-light LED chip surface forms metal electrode.
4. the white chip as described in claims 1 or 2 or 3, which is characterized in that the fluorescence diaphragm is set to the LED chip Upper surface, and the area of the fluorescence diaphragm be greater than LED chip surface area, the fluorescence diaphragm is along the LED chip Center setting.
5. the white chip as described in claims 1 or 2 or 3, which is characterized in that the transparent silica gel is in the fluorescence diaphragm watch The LED chip surrounding is set in arcuation facing towards fluorescence diaphragm.
6. white chip as claimed in claim 5, which is characterized in that along any side of the LED chip, the transparent silicon The altitude range of glue is 10~150 μm, and width range is 10~1000 μm.
CN201710402474.2A 2017-06-01 2017-06-01 A kind of white chip Pending CN108987556A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710402474.2A CN108987556A (en) 2017-06-01 2017-06-01 A kind of white chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710402474.2A CN108987556A (en) 2017-06-01 2017-06-01 A kind of white chip

Publications (1)

Publication Number Publication Date
CN108987556A true CN108987556A (en) 2018-12-11

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CN201710402474.2A Pending CN108987556A (en) 2017-06-01 2017-06-01 A kind of white chip

Country Status (1)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109755231A (en) * 2018-12-29 2019-05-14 晶能光电(江西)有限公司 White-light LED chip
CN111312866A (en) * 2018-12-12 2020-06-19 蚌埠三颐半导体有限公司 Packaging method and packaging structure of light emitting diode chip

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204834670U (en) * 2015-07-10 2015-12-02 晶能光电(江西)有限公司 White light LED chip package structure
CN204857774U (en) * 2015-07-10 2015-12-09 江西省晶瑞光电有限公司 White light LED packaging structure
CN105720166A (en) * 2014-12-05 2016-06-29 晶能光电(江西)有限公司 White-light LED chip preparation method
CN106129231A (en) * 2015-05-05 2016-11-16 新世纪光电股份有限公司 Light-emitting device and preparation method thereof
US20170054062A1 (en) * 2015-08-21 2017-02-23 Nichia Corporation Method of manufacturing light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105720166A (en) * 2014-12-05 2016-06-29 晶能光电(江西)有限公司 White-light LED chip preparation method
CN106129231A (en) * 2015-05-05 2016-11-16 新世纪光电股份有限公司 Light-emitting device and preparation method thereof
CN204834670U (en) * 2015-07-10 2015-12-02 晶能光电(江西)有限公司 White light LED chip package structure
CN204857774U (en) * 2015-07-10 2015-12-09 江西省晶瑞光电有限公司 White light LED packaging structure
US20170054062A1 (en) * 2015-08-21 2017-02-23 Nichia Corporation Method of manufacturing light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111312866A (en) * 2018-12-12 2020-06-19 蚌埠三颐半导体有限公司 Packaging method and packaging structure of light emitting diode chip
CN109755231A (en) * 2018-12-29 2019-05-14 晶能光电(江西)有限公司 White-light LED chip

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Application publication date: 20181211