CN100492690C - Packaging method for white light LED - Google Patents
Packaging method for white light LED Download PDFInfo
- Publication number
- CN100492690C CN100492690C CNB200710172635XA CN200710172635A CN100492690C CN 100492690 C CN100492690 C CN 100492690C CN B200710172635X A CNB200710172635X A CN B200710172635XA CN 200710172635 A CN200710172635 A CN 200710172635A CN 100492690 C CN100492690 C CN 100492690C
- Authority
- CN
- China
- Prior art keywords
- component
- white light
- emitting diode
- light emitting
- weight content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention discloses an encapsulating method for white light emitting diodes, including the following procedures of dispensing, fixing chips, baking after fixing chips, welding wire, mixing and dispensing fluorescent powders, baking after dispensing fluorescent powders, mixing glue, pouring glue and baking after pouring glue; the mixing fluorescent powders procedure includes proportionally taking out, stirring and thoroughly mixing the first component, the second component and fluorescent powders; the first component is poly (dimethylsiloxane), and the second component mainly consists of copolymer formed by dimethylsiloxane, methylhydrosiloxane and vinyl siloxane; in the second component the weight compositions of the copolymer is 94 to 99 percent, and the dimethylsiloxane content is 84 to 90 percent by weight of the copolymer, 4 to 9 percent by weight of methylhydrosiloxane, and 2 to 7 percent by weight of vinyl siloxane.
Description
[technical field]
The present invention relates to a kind of light emitter diode seal method, or rather, relate to a kind of method for packing of low light decay white light emitting diode.
[background technology]
Light-emitting diode is a kind of light emitting semiconductor device, is used as indicator light, display screen etc. widely.White light emitting diode be described as replace fluorescent lamps and incandescent lamp the 4th generation lighting source.Theoretical about 100000 hours of the life-span of light-emitting diode, still, from white light emitting diode product in the market, its life-span do not reach far away theoretical 100000 hours.
See also shown in Figure 1, this figure be the white light emitting diode product of domestic certain A company under 25 ℃ of room temperature conditions, constant current 25mA electric current, 2520 hours light decay curve chart of follow-on test.As can be seen from this figure, 13% light decay rate occurred in the time of 168 hours, the light decay rate is 20% in the time of 336 hours, the light decay rate is 25% in the time of 504 hours, the light decay rate was 49% when the light decay rate was 31%, 1128 hour in the time of 648 hours, and its light decay rate has reached 80% in the time of 2520 hours.In order further to verify the light decay situation of this product, under 25 ℃ of room temperature conditions, constant current 40mA electric current, follow-on test 1032 hours, Fig. 2 are light decay curve chart under these conditions to the inventor to this product.As can be seen from this figure, 34% light decay rate occurred in the time of 168 hours, the light decay rate is 45% in the time of 336 hours, and the light decay rate is 68% in the time of 504 hours, and the light decay rate has reached 88% in the time of 1032 hours.
Foreign vendor is faced with the light decay problem too, and at present international top LED manufacturer has had significant improvement at the white light LEDs product that the effort that reduces aspect the light decay has made them produce aspect the light decay.See also shown in Figure 3, this figure be model that Japanese Ri Ya chemical company produces be the white light emitting diode of NSPW500CS under 25 ℃ of room temperature conditions, constant current 25mA electric current, 2520 hours light decay curve chart of follow-on test.As can be seen from this figure, 3% light decay rate occurred in the time of 168 hours, the light decay rate is 5% in the time of 336 hours, the light decay rate is 8% in the time of 504 hours, the light decay rate was 12% when the light decay rate was 10%, 1128 hour in the time of 648 hours, and its light decay rate has reached 24% in the time of 2520 hours.In order further to verify the light decay situation of the white light emitting diode product of above-mentioned model, under 25 ℃ of room temperature conditions, constant current 40mA electric current, follow-on test 1032 hours, Fig. 4 are light decay curve chart under these conditions to the inventor to this product.As can be seen from this figure, 10% light decay rate occurred in the time of 168 hours, the light decay rate is 13% in the time of 336 hours, and the light decay rate is 14% in the time of 504 hours, and the light decay rate has reached 24% in the time of 1032 hours.
See also shown in Figure 5, this figure is that model that another giant U.S. Hua Gang company in LED field, the world today produces is that the white light emitting diode of LC503TWN1-15Q-A1 is under 25 ℃ of room temperature conditions, constant current 25mA electric current, 2520 hours light decay curve chart of follow-on test.As can be seen from this figure, 4% rising has appearred in its luminous flux sustainment rate in the time of 168 hours, its luminous flux sustainment rate still remains on 104% state in the time of 336 hours, its luminous flux sustainment rate falls back to 103% in the time of 504 hours, its luminous flux sustainment rate falls back to 101% in the time of 648 hours, the light decay rate is 3% in the time of 1128 hours, and its light decay rate has reached 9% in the time of 2520 hours.In order further to verify the light decay situation of the white light emitting diode product of above-mentioned model, under 25 ℃ of room temperature conditions, constant current 40mA electric current, follow-on test 1032 hours, Fig. 6 are light decay curve chart under these conditions to the inventor to this product.As can be seen from this figure, 4% rising has appearred in its luminous flux sustainment rate in the time of 168 hours, and the light decay rate is 2% in the time of 336 hours, and the light decay rate is 5% in the time of 504 hours, and the light decay rate has reached 17% in the time of 1032 hours
The relative product of other companies at present of inferior product chemical and U.S. Hua Gang of day has remarkable advantages aspect the light decay, yet, the price of this two manufacturers product is all very high, be the doubly a lot of of present like product, this certainly will increase the use cost of LED, and then has fettered LED interior applying on a large scale.Therefore, market calls a kind of new technology to occur, to address the above problem.
[summary of the invention]
Technical problem to be solved by this invention is to overcome above-mentioned defective, and a kind of method for packing of white light emitting diode is provided, and the white light emitting diode that encapsulates by this kind method for packing has advantages such as low light decay, long-life, low cost.
The present invention is achieved by the following technical solutions: a kind of method for packing of white light emitting diode, comprise the steps: a glue, and be about to insulating cement and click and enter in the support reflector; Gu brilliant, be about to above the support that ready prepd crystal grain is positioned over the insulating cement of having put; Gu the baking of brilliant back, soon the semi-finished product of solid good crystal grain toast, and make crystal grain and support fix adhesion; Bonding wire, the crystal grain that soon toasts out is drawn two gold threads at both positive and negative polarity; Join fluorescent material, promptly take out first component in proportion, second component, fluorescent material is prepared, stir then, it is fully mixed, wherein said first component is a dimethyl silicone polymer, mainly consisting of of described second component by dimethyl siloxane, the copolymer that methyl hydrogen radical siloxane and vinylsiloxane form, the weight content of copolymer is 94%～99% in described second component, and wherein the weight content of dimethyl siloxane is 84%～90%, the weight content of methyl hydrogen radical siloxane is 4%～9%, the weight content of vinylsiloxane is 2%～7%; Dot fluorescent powder is about to be clicked and entered successively in the support reflector that has welded gold thread by the composite that described first component, described second component, fluorescent material allotment form; Toast behind the dot fluorescent powder, the support that is about to the good fluorescent material of point toasts, so that its curing; And join baking procedure behind glue, encapsulating, the encapsulating.
Described joining in the fluorescent material step, the part by weight of first component, second component, fluorescent material is 3:3:1.
The weight content of copolymer is preferably 98% in described second component, and wherein the weight content of dimethyl siloxane is preferably 87%, the weight content of methyl hydrogen radical siloxane is preferably 7%, the weight content of vinylsiloxane is preferably 4%.
Also comprise r-(2, the 3-glycidoxy) propyl trimethoxy silicane (r-glycidol ether propyl trimethoxy silicane) in described second component, its weight content in second component is 0.5%～3%.
The weight content of described r-(2, the 3-glycidoxy) propyl trimethoxy silicane (r-glycidol ether propyl trimethoxy silicane) in second component is preferably 1%.
Also comprise the triethoxy methylsiloxane in described second component, its weight content in second component is 0.5%～3%.
The weight content of described triethoxy methylsiloxane in second component is preferably 1%.
In the baking procedure, baking temperature is at the 130-150 degree behind the described dot fluorescent powder, and stoving time was at 1-2 hour.
Before the baking, also have one to vacuumize step behind the step encapsulating, behind the step encapsulating.
Behind the step dot fluorescent powder, before the baking, also have one to vacuumize step behind the step dot fluorescent powder, promptly the composite that is formed by first component, second component, fluorescent material allotment is carried out vacuum defoamation.
Compared with prior art, the method for packing of white light emitting diode of the present invention encapsulates by adopting the special arogel of joining that is formed by described first component and the allotment of second component, simultaneously baking temperature and time are controlled, not only solved the high light decay problem that white light emitting diode faces at present effectively, and technology is simple, with low cost, and the research and development of this technology successfully will promote the application of white light emitting diode at lighting field energetically.
[description of drawings]
Fig. 1 is under the kindred circumstances, the white light emitting diode product of domestic certain A company under 25 ℃ of room temperature conditions, constant current 25mA electric current, 2520 hours light decay curve chart of follow-on test.
Fig. 2 is under the kindred circumstances, the white light emitting diode product of domestic certain A company under 25 ℃ of room temperature conditions, constant current 40mA electric current, 1032 hours light decay curve chart of follow-on test.
Fig. 3 is under the kindred circumstances, the model that Japanese Ri Ya chemical company produces be the white light emitting diode of NSPW500CS under 25 ℃ of room temperature conditions, constant current 25mA electric current, 2520 hours light decay curve chart of follow-on test.
Fig. 4 is under the kindred circumstances, the model that Japanese Ri Ya chemical company produces be the white light emitting diode of NSPW500CS under 25 ℃ of room temperature conditions, constant current 40mA electric current, 1032 hours light decay curve chart of follow-on test.
Fig. 5 is under the kindred circumstances, the model that U.S. Hua Gang company produces be the white light emitting diode of LC503TWN1-15Q-A1 under 25 ℃ of room temperature conditions, constant current 25mA electric current, 2520 hours light decay curve chart of follow-on test.
Fig. 6 is under the kindred circumstances, the model that U.S. Hua Gang company produces be the white light emitting diode of LC503TWN1-15Q-A1 under 25 ℃ of room temperature conditions, constant current 40mA electric current, 1032 hours light decay curve chart of follow-on test.
Fig. 7 is the flow chart of disclosed white light emitting diode method for packing.
Fig. 8 is under the kindred circumstances, according to the white light emitting diode of disclosed white light emitting diode method for packing encapsulation under 25 ℃ of room temperature conditions, constant current 25mA electric current, 2520 hours light decay curve chart of follow-on test.
Fig. 9 is under the kindred circumstances, according to the white light emitting diode of disclosed white light emitting diode method for packing encapsulation under 25 ℃ of room temperature conditions, constant current 40mA electric current, 1032 hours light decay curve chart of follow-on test.
[embodiment]
White light emitting diode according to method for packing encapsulation of the present invention comprises support, LED crystal particle, joins arogel and fluorescent material, described LED crystal particle is fixed on the support, described fluorescent material with join arogel and allocate in proportion, the described arogel of joining is formed by the first thick component and second component allotment that all is in a liquid state, wherein said first component is a dimethyl silicone polymer, the copolymer that mainly the consisting of of described second component formed by dimethyl siloxane, methyl hydrogen radical siloxane and vinylsiloxane (
), also comprise simultaneously r-(2, the 3-glycidoxy) propyl trimethoxy silicane (r-glycidol ether propyl trimethoxy silicane) (molecular structural formula:
) and the triethoxy methylsiloxane (molecular structural formula:
)。The weight content of copolymer described in described second component is 94%～99% (present embodiment is preferably 98%), and wherein the weight content of dimethyl siloxane is that the weight content of 84%～90% (present embodiment is preferably 87%), methyl hydrogen radical siloxane is that the weight content of 4%～9% (present embodiment is preferably 7%), vinylsiloxane is 2%～7% (present embodiment is preferably 4%).The weight content of r-in described second component (2, the 3-glycidoxy) propyl trimethoxy silicane (r-glycidol ether propyl trimethoxy silicane) in second component is 0.5%～3% (present embodiment is preferably 1%); The weight content of triethoxy methylsiloxane in second component in described second component is 0.5%～3% (present embodiment is preferably 1%).
See also shown in Figure 7ly, the method for packing of the white light emitting diode that is disclosed in the present embodiment comprises the steps:
Step 1: some glue is about to insulating cement and clicks and enters in the support reflector.
Step 2: Gu brilliant, be about to above the support that ready prepd crystal grain is positioned over the insulating cement of having put.
Step 3:, make crystal grain and support fix adhesion Gu the baking of brilliant back is about to the semi-finished product of solid good crystal grain and puts into the high temperature baking box and toast.
Step 4: bonding wire, the crystal grain that soon toasts out is drawn two gold threads at both positive and negative polarity.
Step 5: join fluorescent material, promptly take out first component, second component, fluorescent material in proportion and prepare, stir then, it is fully mixed, mixing time is about 5 minutes; Wherein said first component is a dimethyl silicone polymer, mainly consisting of of described second component by dimethyl siloxane, the copolymer that methyl hydrogen radical siloxane and vinylsiloxane form, the weight content of copolymer is 94%～99% (present embodiment is preferably 8%) in described second component, and wherein the weight content of dimethyl siloxane is 84%～90% (present embodiment is preferably 87%), the weight content of methyl hydrogen radical siloxane is 4%～9% (present embodiment is preferably 7%), the weight content of vinylsiloxane is 2%～7% (present embodiment is preferably 4%).
Step 6: vacuumize, promptly the composite that is formed by first component, second component, fluorescent material allotment is carried out vacuum defoamation, the pumpdown time is about 5-10 minute.
Step 7: dot fluorescent powder, the composite that is formed by first component, second component, fluorescent material allotment that is about to have taken out vacuum is poured in the syringe of point gum machine, regulate the jelly amount after, it is clicked and entered in the support reflector that has welded gold thread successively.
Step 8: toast behind the dot fluorescent powder, the support that is about to the good glue of point is put into the high temperature baking box and is toasted, so that its curing, temperature is at the 130-150 degree, and stoving time was at 1-2 hour.
Step 9: join glue, be about to the good A of preheating, B agent epoxy glue, be generally the 1:1 part by weight and prepare, and stir, so that it fully mixes by certain.
Step 10: vacuumize, promptly the composite of preparing in the step 9 is carried out vacuum defoamation, the pumpdown time is about 5-10 minute.
Step 11: encapsulating, promptly utilize the encapsulating machine that glue is injected in die cavity or the support successively.
Step 12: toast behind the encapsulating, promptly carry out high-temperature baking, the adhesive curing that makes in the step 11 to be injected, baking temperature is 125 degree, time 8-10 hour.
Step 13: cut pin: promptly utilize diel, separately with its both positive and negative polarity.
Step 14: beam split, promptly utilize light splitting machine, classify according to relevant electrical parameters such as the voltage of product, brightness, colors.
In the present embodiment, it is the LED crystal particle of 455-465nm that described chip is selected the blue light emitting wavelength for use, the crystal-bonding adhesive insulating cement, fluorescent material adopts silicate fluorescent powder, LED support adopts retort stand, join arogel and then adopt the 1:1 allotment by weight proportion of above-mentioned first component and second component to form, described fluorescent material, first component, second component allotment part by weight are 1:3:3.Need to prove that the fluorescent material among the present invention can certainly be YAG yttrium aluminium garnet fluorescent powder, TAG terbium aluminium garnet fluorescent material or sulphide fluorescent material or their mixture etc.
In order to verify the light decay situation of the white light emitting diode that above-mentioned method for packing is packaged, the inventor has done a large amount of experiments.See also shown in Figure 8, this figure be under the similarity condition according to the white light emitting diode of disclosed method for packing encapsulation under 25 ℃ of room temperature conditions, constant current 25mA electric current, 2520 hours light decay curve chart of follow-on test.As can be seen from this figure, the luminous flux sustainment rate is 105% in the time of 168 hours, the luminous flux sustainment rate is 106% in the time of 336 hours, the luminous flux sustainment rate still is 106% in the time of 504 hours, the luminous flux sustainment rate is 107% in the time of 648 hours, the luminous flux sustainment rate is 102% in the time of 1128 hours, and it 3% light decay rate only occurred in the time of 2520 hours.
For the light decay situation of the packaged white light emitting diode of the method for packing of further checking the present invention announcement, the inventor has carried out a large amount of experiments to its light decay situation again.See also shown in Figure 9, this figure be under the similarity condition according to the white light emitting diode of disclosed method for packing encapsulation under 25 ℃ of room temperature conditions, constant current 40mA electric current, 1032 hours light decay curve chart of follow-on test.Its light decay rate is 2% in the time of 168 hours, and the light decay rate only is 3% in the time of 336 hours, and the light decay rate then is zero in the time of 504 hours, and the light decay rate only is 2% in the time of 1032 hours.
Need to prove that above-mentioned kindred circumstances is meant: (1) each experiment is all carried out under same laboratory, same time period and environmental condition; (2) each test event all is 20 light-emitting diodes randomly drawing from some single tubes wherein, as the sample of test.
The present invention produces on the basis of a large amount of experiments, the inventor is through a series of experiment, the chip of a large amount of encapsulating materials and light-emitting diode is carried out matching test, final discovery uses the composite that is formed in proportion by described first component and described second component to join powder, can reduce the light decay rate of white light emitting diode widely, the life-span of improving light-emitting diode significantly.The white light emitting diode of the method for packing encapsulation that foundation is disclosed is compared with domestic like product has significantly low light decay advantage, compare with the like product that external first-class technology manufacturer is researched and developed, has close even lower light decay rate, but it is with low cost, have tangible price advantage, the widespread adoption that promotes white light emitting diode is had very important effect.
More than describing is embodiments of the invention only, forgives and can understand, and under the prerequisite that does not depart from the present invention's design, to simple modification of the present invention and replacement, all should be included within the technical conceive of the present invention.
Claims (10)
1. the method for packing of a white light emitting diode comprises the steps:
Point glue is about to insulating cement and clicks and enters in the support reflector;
Gu brilliant, be about to above the support that ready prepd crystal grain is positioned over the insulating cement of having put;
Gu the baking of brilliant back, soon the semi-finished product of solid good crystal grain toast, and make crystal grain and support fix adhesion;
Bonding wire, the crystal grain that soon toasts out is drawn two gold threads at both positive and negative polarity;
Join fluorescent material, promptly take out first component in proportion, second component, fluorescent material is prepared, stir then, it is fully mixed, wherein said first component is a dimethyl silicone polymer, mainly consisting of of described second component by dimethyl siloxane, the copolymer that methyl hydrogen radical siloxane and vinylsiloxane form, the weight content of copolymer is 94%～99% in described second component, and wherein the weight content of dimethyl siloxane is 84%～90%, the weight content of methyl hydrogen radical siloxane is 4%～9%, the weight content of vinylsiloxane is 2%～7%;
Dot fluorescent powder is about to be clicked and entered successively in the support reflector that has welded gold thread by the composite that described first component, described second component, fluorescent material allotment form;
Toast behind the dot fluorescent powder, the support that is about to the good fluorescent material of point toasts, so that its curing; And
Join baking procedure behind glue, encapsulating, the encapsulating.
2. the method for packing of white light emitting diode as claimed in claim 1, it is characterized in that: described joining in the fluorescent material step, the part by weight of first component, second component, fluorescent material is 3: 3: 1.
3. the method for packing of white light emitting diode as claimed in claim 1 or 2, it is characterized in that: the weight content of copolymer is 98% in described second component, and wherein the weight content of dimethyl siloxane is 87%, the weight content of methyl hydrogen radical siloxane is 7%, the weight content of vinylsiloxane is 4%.
4. the method for packing of white light emitting diode as claimed in claim 3, it is characterized in that: also comprise r-(2 in described second component, 3-glycidoxy) propyl trimethoxy silicane (r-glycidol ether propyl trimethoxy silicane), its weight content in second component is 0.5%～3%.
5. the method for packing of white light emitting diode as claimed in claim 4, it is characterized in that: the weight content of described r-(2,3-glycidoxy) propyl trimethoxy silicane (r-glycidol ether propyl trimethoxy silicane) in second component is 1%.
6. the method for packing of white light emitting diode as claimed in claim 3, it is characterized in that: also comprise the triethoxy methylsiloxane in described second component, its weight content in second component is 0.5%～3%.
7. the method for packing of white light emitting diode as claimed in claim 6, it is characterized in that: the weight content of described triethoxy methylsiloxane in second component is 1%.
8. the method for packing of white light emitting diode as claimed in claim 1 or 2 is characterized in that: in the baking procedure, baking temperature is at 130-150 degree behind the described dot fluorescent powder, and stoving time was at 1-2 hours.
9. the method for packing of white light emitting diode as claimed in claim 1 or 2 is characterized in that: before the baking, also have one to vacuumize step behind the step encapsulating, behind the step encapsulating.
10. the method for packing of white light emitting diode as claimed in claim 1 or 2, it is characterized in that: behind the step dot fluorescent powder, before the baking, also have one to vacuumize step behind the step dot fluorescent powder, promptly the composite that is formed by first component, second component, fluorescent material allotment is carried out vacuum defoamation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200710172635XA CN100492690C (en) | 2007-12-20 | 2007-12-20 | Packaging method for white light LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200710172635XA CN100492690C (en) | 2007-12-20 | 2007-12-20 | Packaging method for white light LED |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101197412A CN101197412A (en) | 2008-06-11 |
| CN100492690C true CN100492690C (en) | 2009-05-27 |
Family
ID=39547657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200710172635XA Expired - Fee Related CN100492690C (en) | 2007-12-20 | 2007-12-20 | Packaging method for white light LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100492690C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369623B (en) * | 2008-10-08 | 2010-06-09 | 山东华光光电子有限公司 | Technique for coating fluorescent powder on LED chip |
| CN102148298B (en) * | 2010-12-28 | 2013-01-23 | 广州市鸿利光电股份有限公司 | Multipoint dispensing process and LED (light emitting diode) device |
| CN102832317B (en) * | 2012-08-16 | 2015-12-16 | 东莞市钜晶光电有限公司 | Red-light LED method for packing |
| CN102945910B (en) * | 2012-11-20 | 2015-03-11 | 湖南美星光电科技有限公司 | Manufacture method of mixed type saffron light-emitting diode (LED) |
| CN103779484A (en) * | 2014-01-24 | 2014-05-07 | 南通苏禾车灯配件有限公司 | Dispensing and curing method in packaging process of LED lamp |
-
2007
- 2007-12-20 CN CNB200710172635XA patent/CN100492690C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101197412A (en) | 2008-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100474646C (en) | Packaging method for white light illuminating diode | |
| CN101230245A (en) | Gluewater for packaging light-emitting diode and uses thereof | |
| CN104789186B (en) | A kind of one-component does not go out oil type LED filament thixotrope and preparation method thereof | |
| CN100490201C (en) | White light LED | |
| CN100492690C (en) | Packaging method for white light LED | |
| CN101714598A (en) | Method for layering and precipitating fluorescent powder in packaging process of white LED | |
| CN102832317B (en) | Red-light LED method for packing | |
| CN102237475A (en) | LED wafer level fluorescent powder coating technology based on organic colloid | |
| CN101320775A (en) | Encapsulation of silicon substrate LED | |
| CN102163660A (en) | Light emitting diode (LED) packaging process | |
| CN103165797A (en) | Preformed phosphor thin film for white light-emitting diode (LED) thin film packaging and preparation method for thin film | |
| CN101436625A (en) | Packaging method for white light LED | |
| CN102054919A (en) | High-brightness yellow-green lamp and manufacturing method thereof | |
| CN100477306C (en) | White Light-emitting diode | |
| CN109256458A (en) | A kind of LED product encapsulating structure and its packaging method | |
| CN104882529A (en) | Quick packaging method for COB-type LED chip | |
| CN105552193A (en) | LED filament preparation method | |
| CN100477307C (en) | Light-emitting diode | |
| CN100541847C (en) | Light emitter diode seal method | |
| CN109742216A (en) | A kind of no dead angle shines and the led lighting source production method of single side encapsulation | |
| CN101230262B (en) | Method for reducing light decay of white light luminescent diode | |
| CN100517787C (en) | Method for reducing light decay of light emitting diode | |
| CN101230197B (en) | Organosilicon composition for manufacturing packaging gluewater of light-emitting diode | |
| CN100541848C (en) | Light-emitting diode | |
| CN100459199C (en) | Light-emitting diode packaging method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090527 Termination date: 20121220 |