CN202363515U - LED device and LED module device thereof - Google Patents
LED device and LED module device thereof Download PDFInfo
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- CN202363515U CN202363515U CN2011203545261U CN201120354526U CN202363515U CN 202363515 U CN202363515 U CN 202363515U CN 2011203545261 U CN2011203545261 U CN 2011203545261U CN 201120354526 U CN201120354526 U CN 201120354526U CN 202363515 U CN202363515 U CN 202363515U
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Abstract
The utility model belongs to the technical field of LEDs, and particularly discloses an LED device and an LED module device thereof. The LED device comprises a substrate and a plurality of LED chips inversely mounted on the substrate, an insulating layer of the substrate is made of a DLC (diamond like carbon) film or diamond film, first radiating layers are arranged on the upper surfaces of a P-metal electrode layer and an N-metal electrode layer of the substrate and between the P-metal electrode layer and the N-metal electrode layer and are also made of DLC films or diamond films, and a high reflecting layer is arranged on each of the upper surface of each first radiating layer or the lower surface of P-type gallium nitride of each LED chip. The LED module device can be obtained by packaging the LED device. The LED device and the LED module device have the advantages that by means of improvement of materials and structures, better radiating performance and high light-emitting efficiency are obtained, and LED development requirements are met.
Description
Technical field
The utility model belongs to the LED technical field, is specifically related to a kind of height heat radiation of upside-down mounting, the LED device and the LED module device thereof of high light efficiency.
Background technology
In order to obtain the more LED of high brightness, increase the input current of LED usually, but along with the increase of electric current, the heat that led chip produces increases sharply, like heat derivation that can not in time, effectively will be unnecessary, the LED light efficiency will descend rapidly, seriously shorten the LED life-span.
Along with the LED application is extensive day by day, various LED encapsulating structure light sources have appearred, and it comprises led chip and substrate.Wherein, traditional metal-base circuit plate (MCPCB) is exactly a relatively more excellent substrate of a kind of heat dispersion, and its common structure comprises the metallic substrates that is positioned at bottom, is positioned at the insulating barrier on the said metallic substrates and is positioned at the circuit layer on the said insulating barrier; Wherein, metallic substrates is processed by the splendid aluminium of pyroconductivity, copper metal; Wherein, insulating barrier is processed by high molecular polymer, because the conductive coefficient of macromolecular material is merely 0.2～0.5W/mK, thereby causes the pyroconductivity of MCPCB that 1W/mK～2.2W/mK is also only arranged.Therefore, the heat dispersion of traditional metal base circuit board (MCPCB) is still bad.
In order further to improve its heat dispersion, there is the people that high conductive material is compound in the macromolecule polymer material of insulating barrier.Though this measure has promoted the pyroconductivity of traditional MCPCB product to a certain extent, the pyroconductivity of its MCPCB one-piece rotor shaft direction also only can be promoted to about 3～5W/mK, far can not satisfy high-capacity LED product radiating requirements.
Diamond-film-like (DLC) has splendid thermal conductivity (600-1200W/mk); Have remarkable advantages such as 12 times of heat diffusivities, the high strength of materials, high anti-invading property to copper material; The insulating layer material that is used for metallic circuit replaces the insulating barrier of traditional metal circuit board, the thermal conductivity of metallic circuit plate insulating layer is promoted more than hundred times, and the substrate of the CTE of DLC (thermal coefficient of expansion) (7～9ppm/ ℃) and led chip, silicon or sapphire material matees; Can not produce thermal stress and thermal deformation because of heat; When improving heat dispersion, can also effectively solve the inconsistent problem of bringing of each storeroom thermal coefficient of expansion, further promote the quality and the reliability of LED product.
Wherein, U.S. Pat 20050276052A1 just discloses a kind of diamond-film-like (DLC) that utilizes and has replaced the led module structure of high molecular polymer as the high-cooling property of insulating barrier: it with aluminium nitride (AlN) ceramic material as substrate; Diamond-film-like (DLC) replaces high molecular polymer as insulating barrier, the circuit layer on the substrate directly and led chip be electrically connected.This kind packaged type has strengthened the heat dispersion of LED, but since the AlN pottery than frangible, the product yield is difficult to guarantee.
In addition; U.S. Pat 20070035930A1 discloses the LED encapsulating structure of another kind of high-cooling property; Circuit layer top at substrate (PCB) covers, perhaps all covers one deck DLC film, perhaps all covers the DLC film on the upper and lower surface of pcb board, to strengthen led chip heatsink transverse ability on substrate.Though this packaged type also can improve the LED heat-sinking capability,, can cause light efficiency to decrease because DLC has certain absorption originally as opaque film to LED light.
The utility model content
Above deficiency to prior art; First purpose of the utility model is to provide the LED that a kind of heat dispersion is better and luminous efficiency is higher encapsulating structure, and second purpose of the utility model is to provide the LED module that a kind of heat dispersion is better and luminous efficiency is higher device.
In order to realize first purpose of the utility model, the technical scheme that the utility model is taked is following:
A kind of LED device; Comprise substrate and the upside-down mounting a plurality of led chips on said substrate; Said substrate comprises metallic substrates, is grown in the insulating barrier of said metallic substrates upper surface and is grown in the metal electrode layer on the said insulating barrier; Said metal electrode layer comprises separate P district metal electrode layer and N district metal electrode layer; Said insulating barrier adopts diamond-film-like (DLC) or diamond film to make; Between the upper surface of said P district's metal electrode layer and N district metal electrode layer and said P district's metal electrode layer and N district metal electrode layer, be provided with first heat dissipating layer, said first heat dissipating layer adopts diamond-film-like (DLC) or diamond film to make equally, at the upper surface of said first heat dissipating layer, or be provided with a high reflection layer at the lower surface of the P of led chip type gallium nitride.
Further; Processing for ease; Said P district metal electrode layer is provided with the P weld pad that makes things convenient for substrate and led chip to be electrically connected; Said N district metal electrode layer is provided with the N weld pad that makes things convenient for substrate and led chip to be electrically connected, and is electrically connected in order to prevent P/N weld pad and reflector, also is attached with diamond-film-like (DLC) or diamond film at the sidewall of said P weld pad and the sidewall of N weld pad.
Further, in order to increase light output efficiency, between said P district's metal electrode layer and N district metal electrode layer, be provided with a square groove.
Further, in order to promote light efficiency, between said P district's metal electrode layer and N district metal electrode layer, be provided with an inverted trapezoidal groove.
Optional, the metal material of said metallic substrates is aluminium (Al), copper (Cu), gold (Au) or nickel (Ni).
Optional, the reflector of the individual layer shape that said high reflection layer is formed by following any material or below the multi-lamellar distributed Bragg reflecting layer that forms of multiple material cycle alternating growth:
Indium (In), aluminium (Al), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), silicon nitride (SiNx), silicon dioxide (SiO
2), alundum (Al (Al
2O
3), titanium monoxide (TiO), titanium dioxide (TiO
2), titanium sesquioxide (Ti
2O
3) and zirconium dioxide (ZrO
2).
In order to realize second purpose of the utility model, the technical scheme that the utility model is taked is following:
A kind of LED module device of processing according to said LED device comprises:
The LED device comprises substrate and the upside-down mounting a plurality of led chips on said substrate;
Box dam glue, be enclosed in said led chip around; And
The phototransformation material layer is sealed on the top of said led chip.
Further, the requirement for the type that realizes not sharing the same light also is provided with an optical structure layers on said phototransformation material layer.
Optional, said optical structure layers be shaped as hemisphere, square, oval, Fresnel shape, honeycombed, peanut shape, taper shape, regular hexagon or dried persimmon shape.
Optional, the material of said optical structure layers is one or several in Merlon (PC), polymethyl methacrylate (PMMA), silica gel (Silicone), polypropylene (EP), polyphenyl dioctyl phthalate glycol ester (PET) and the glass.
Optional, said box dam glue is not extinction thermosets or white extinction thermosets not of DAM glue, milky.
Optional, said phototransformation material layer is organic dyestuff, rare earth organic complex, rare earth phosphor or semiconductor-quantum-point.
Optional, the arrange shape of said a plurality of led chips on said substrate is square, polygon or circle.
The utility model is when changing insulating layer material into splendid diamond-film-like of thermal conductivity (DLC) or diamond film; Also between the upper surface of P district metal electrode layer and N district metal electrode layer and P district metal electrode layer and N district metal electrode layer, be provided with first heat dissipating layer of same material, thereby the heat dispersion of the utility model is provided greatly; In order to overcome the defective that light efficiency that diamond-film-like (DLC) or diamond film bring reduces; The utility model through at the upper surface of first heat dissipating layer, or one high reflection layer is set at the lower surface of the P of led chip type gallium nitride, can significantly improve LED device luminous efficiency.
Therefore, the utility model LED device and LED module device, not only heat dispersion is better with respect to prior art, and luminous efficiency is higher.
Description of drawings
Fig. 1 is the structural representation of existing led chip;
Fig. 2 is the structural representation of the utility model LED device embodiment 1;
Fig. 3 is the structural representation of the utility model LED device embodiment 2;
Fig. 4 is the structural representation of the utility model LED device embodiment 3;
Fig. 5 is the structural representation of the utility model LED device embodiment 4;
Fig. 6 is the structural representation of the utility model LED device embodiment 5;
Fig. 7 is the overall structure sketch map of the utility model LED module device embodiment 6;
Fig. 8 is the structural representation of the utility model LED module device embodiment 6;
Fig. 9 is the vertical view of the utility model LED module device embodiment 6;
Figure 10 is the overall structure sketch map of the utility model LED module device embodiment 7;
Among the figure:
The 1-LED chip; The 11-Sapphire Substrate; 12-N type gallium nitride; 13-multi layer quantum well luminescent layer; 14-P type gallium nitride; The 15-P electrode; The 16-metal salient point; The 17-N electrode;
The 2-substrate; 21-P district metal electrode layer; 22-N district metal electrode layer; The 23-insulating barrier; The 24-metallic substrates; 25-first heat dissipating layer; The 26-P weld pad; The 27-N weld pad;
The 3-reflector;
4-outer package structure; 41-box dam glue; 42-phototransformation material layer; 43-optical facilities layer;
The 5-LED module is anodal;
6-LED module negative pole.
Embodiment
Embodiment 1
As shown in Figure 2, present embodiment discloses a kind of LED device, comprises a plurality of led chips 1 (situation of only schematically having drawn a led chip among the figure) and substrate 2, shown in led chip 1 upside-down mounting on substrate 2.
Of Fig. 1, led chip 1 comprises Sapphire Substrate 11, n type gallium nitride 12, multi layer quantum well luminescent layer 13, P type gallium nitride 14, P electrode 15, metal salient point 16 and N electrode 17.On Sapphire Substrate 11, grow into n type gallium nitride 12, grow into luminescent layer 13 on the n type gallium nitride 12, growth has P type gallium nitride 14 on the luminescent layer 13.Through processing steps such as photoetching, etching, layer metal deposition and passivation layer protections; Pass through sliver technology at last; On 14 layers of P type gallium nitride, form P electrode 15 and metal salient point 16; On n type gallium nitride 12, form N electrode 17 and metal salient point 16, and P electrode 15 and N electrode 17 are positioned at the same side of led chip.
Wherein, The material of metal salient point 16 can be a kind of, multiple or its alloy among Ag, Au, Al, Cu, Cr, the Ni; Its position can be in the P district 21 of the metal electrode layer of substrate 2 and N district 22, on the chip ohmic contact layer or both all have, the technology of manufacturing metal salient point 16 can be that ball technology is planted in evaporation, plating, metal wire.
As shown in Figure 2; Substrate 2 comprises metallic substrates 24, is grown in the insulating barrier 23 of metallic substrates 24 upper surfaces and is grown in the metal electrode layer on the insulating barrier 23; Metal electrode layer comprises separate P district metal electrode layer 21 and N district metal electrode layer 22; P district metal electrode layer 21 is provided with the P weld pad 26 that makes things convenient for substrate 2 and led chip 1 to be electrically connected; N district metal electrode layer 22 is provided with the N weld pad 27 that makes things convenient for substrate 2 and led chip 1 to be electrically connected, and is electrically connected in order to prevent P/N weld pad (26,27) and reflector 3, also is attached with diamond-film-like (DLC) or diamond film at the sidewall of P weld pad 26 and the sidewall of N weld pad 27.
Wherein, the metal material of metallic substrates 24 is aluminium (Al), copper (Cu), gold (Au) or nickel (Ni).Wherein, insulating barrier 23 adopts diamond-film-like (DLC) or diamond film to make, to improve the radiating effect of this LED device.
Wherein, Between the upper surface of P district metal electrode layer 21 and N district metal electrode layer 22 and P district metal electrode layer 21 and N district metal electrode layer 22, be provided with first heat dissipating layer 25; First heat dissipating layer, 25 same diamond-film-like (DLC) or the diamond films of adopting make, and further improve its radiating effect.
Wherein, be provided with a high reflection layer 3 at the upper surface of first heat dissipating layer 25, to improve the light efficiency of this LED device.
Wherein, the reflector of the individual layer shape that forms by following any material of high reflection layer 3:
Indium (In), aluminium (Al), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), silicon nitride (SiNx), silicon dioxide (SiO
2), alundum (Al (Al
2O
3), titanium monoxide (TiO), titanium dioxide (TiO
2), titanium sesquioxide (Ti
2O
3) and zirconium dioxide (ZrO
2).
The utility model can expose P weld pad 26 and N weld pad 27 on the metallic circuit layer through reactive ion etching (RIE), grinding, glossing, and the P electrode 15 on the led chip 1 can be electrically connected with substrate 2 corresponding P weld pads 26 and N weld pad 27 respectively through the mode of Soder, anisotropic conductive film or eutectic bonding with N electrode 17.
Below specify the manufacturing approach of present embodiment LED device:
Step S1: make led chip 1.Have on the epitaxial wafer of n type gallium nitride 12, P type gallium nitride 14, luminescent layer 13 in growth on the Sapphire Substrate 11; Through sequence of process steps such as photoetching, etching, layer metal deposition and passivation layer protections, at the metal salient point 16 that forms on the led chip on P electrode 15 and N electrode 17 and the electrode.
Step S2: make substrate 2.Through chemical vapour deposition technique (CVD) or plasma enhanced chemical vapor deposition method (PE-CVD) at metallic substrates 24 upper surfaces growth insulating barrier 23, through electroplating technology growing metal electrode layer on insulating barrier 23.Metallic circuit layer upper surface CVD, PE-CVD or evaporation process deposit first heat dissipating layer 25 and reflector 3 respectively, expose metal level P weld pad 26 and N weld pad 27 through technologies such as reactive ion etching (RIE), grinding, glossings.
Step S3: the upper surface that led chip 1 flip chip bonding is connected on substrate 2.Reflux, the heating of anisotropic conductive film, apply external force or the eutectic mode realizes the metal salient point 16 of P electrode 15 on the S1 step led chip 1 and N electrode 17 to be electrically connected with corresponding P weld pad of metal substrate and N weld pad bonding respectively through soder.
Embodiment 2
As shown in Figure 3, present embodiment is with the different of embodiment 1: the position of high reflection layer 3 is arranged on the lower surface of the P type gallium nitride 14 of led chip 1.
Present embodiment, because reflector 3 is located on the P type gallium nitride layer 14, first heat dissipating layer, 25 thickness that then are deposited on the metal electrode layer can be highly identical with N weld pad 27 with P weld pad on the substrate 2 26; Because what first heat dissipating layer adopted is diamond-film-like (DLC) or diamond film; Has high thermal diffusivity; Can quicken heat that led chip distributes in horizontal circulation; Rapidly heat is imported to metal substrate, and because diamond-film-like (DLC) or diamond film have hard, wear-resisting excellent specific property, the diamond-film-like (DLC) or the diamond film that are deposited on the metal electrode layer play a very good protection to the metallic circuit layer.
Embodiment 3
As shown in Figure 4, present embodiment is with the different of embodiment 1:
(1) also is attached with diamond-film-like (DLC) or diamond film at the sidewall of P weld pad 26 and the sidewall of N weld pad 27, with the radiating effect of this LED device of further raising.
(2) the multi-lamellar distributed Bragg reflecting layer that forms by following multiple material cycle alternating growth of its high reflection layer 3:
Indium (In), aluminium (Al), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), silicon nitride (SiNx), silicon dioxide (SiO
2), alundum (Al (Al
2O
3), titanium monoxide (TiO), titanium dioxide (TiO
2), titanium sesquioxide (Ti
2O
3) and zirconium dioxide (ZrO
2).
Bragg reflecting layer is the layer structure by two kinds of refractive index material different cycle alternating growths, can the light of directive substrate be utilized Bragg reflection principle reflected back upper surface.The distributed Bragg reflecting layer method can directly utilize MOCVD equipment to grow, and processed has good cost advantage once more.
Embodiment 4
As shown in Figure 5, present embodiment is with the different of embodiment 1: between P district metal electrode layer 21 and N district metal electrode layer 22, be provided with a square groove.
Because the thickness of diamond-film-like (DLC) or diamond film generally between 1 micron to several microns, can carry out effective recess etched at this thickness range.The formation of groove has increased the transmission path of light, can make light final through the sapphire surface launching through repeatedly reflecting in groove, can effectively increase light output efficiency.
Embodiment 5
As shown in Figure 6, present embodiment is with the different of embodiment 4: the groove that between P district metal electrode layer 21 and N district metal electrode layer 22, is provided with is trapezoidal.
Present embodiment is compared with embodiment 4; Inverted trapezoidal structure hypotenuse length is big than the square groove vertical range; And bigger opening is arranged at inverted trapezoidal structure top, can reduce to incide light that bottom portion of groove the launches refraction number of times in recess sidewall, further promotes light efficiency.
Embodiment 6
As shown in Figure 7, present embodiment is by the made LED module device of the disclosed LED device of embodiment 1-5, and it comprises the LED device and is wrapped in the outer outer package structure of this LED device.Wherein, the LED device comprises substrate 2 and the upside-down mounting a plurality of led chips 1 on substrate 2.Wherein, the outer package structure comprises box dam glue 41 and phototransformation material layer 42, box dam glue 41 be enclosed in led chip 1 around, phototransformation material layer 42 is sealed on the top of said led chip 1.
Wherein, box dam glue 41 is not extinction thermosets or white extinction thermosets not of DAM glue, milky.Its height of its available technology controlling and process, width and institute enclose the regional extent of plurality of LEDs chip, have very big flexibility, make things convenient for product is designed, and box dam glue itself has the high reliability of silica gel, can obtain high performance product.
Wherein, Phototransformation material layer 42 is organic dyestuff, rare earth organic complex, rare earth phosphor or semiconductor-quantum-point; Organic dyestuff specifically can be selected fragrant alkane dyestuff, azo dyes or the like for use; Rare earth organic complex specifically can be selected europium doping dibenzoyl methane (DBM:Eu2+), terbium doped P-hydroxybenzoic acid (PHBA:Tb3+) or the like for use; The rare earth phosphor specifically can be selected yttrium-aluminium-garnet (YAG), aluminic acid lutetium (LuAG) or the like for use, and semiconductor-quantum-point specifically can be selected cadmium sulfide (CdS), indium phosphide (InP) or the like for use.Phototransformation material layer 42 is used for photochromicly being converted into want photochromic with what plurality of LEDs chip 1 sent, and as blue light is converted into white light etc., light transformational substance layer 42 is simple layer or multilevel hierarchy structure.
Wherein, the arrange shape of a plurality of led chips 1 on substrate 2 be square, polygon, circular or other shapes.
Below specify the manufacturing approach of present embodiment LED device:
Step S1: make plurality of LEDs chip 1.This step is identical with step among the embodiment 1.
Step S2: make substrate 2.Through chemical vapour deposition technique (CVD) or plasma enhanced chemical vapor deposition method (PE-CVD) at metallic substrates 24 upper surfaces growth insulating barrier 23, through electroplating technology growing metal electrode layer on insulating barrier 23.Metallic circuit layer upper surface CVD, PE-CVD or evaporation process deposit first heat dissipating layer 25 and reflector 3 respectively, expose metal level P weld pad 26 and N weld pad 27 through technologies such as reactive ion etching (RIE), grinding, glossings.
Step S3: the upper surface that led chip 1 flip chip bonding is connected on substrate 2.Reflux, the anisotropic conducting film heating, apply external force or the eutectic mode realizes the metal salient point 16 of P electrode 15 on the S1 step led chip 1 and N electrode 17 to be electrically connected with corresponding P weld pad of metal substrate and N weld pad bonding respectively through soder.Led chip has multiple arrangement mode on substrate 4, different arrangement modes realizes that difference goes out optical target, shown in Fig. 8 and 9.
Step S4: at above-mentioned led chip 1 peripheral point box dam glue 41.In-edit glue program adopts the semi automatic machine hand at plurality of LEDs chip periphery point box dam glue.Control the height and the width of box dam through control point glue air pressure and some glue time.
Step S5: some light transformational substance layer 42 in the zone that box dam glue 41 encloses.YAG base sodium yellow transformational substance sneaked in advance process the fluorescent glue mixture in transparent adhesive tape and the diluent, adopt syringe in box dam glue 41, to inject light transformational substance 42 then.
Embodiment 7
Shown in figure 10, present embodiment and embodiment 6 different being: on phototransformation material layer 42, also be provided with an optical structure layers 43.
This optical structure layers 43 be shaped as a kind of in hemisphere, square, oval, Fresnel shape, honeycombed, peanut shape, taper shape, regular hexagon, the dried persimmon shape.Different shapes can realize the light type requirement that this encapsulating structure is different, and its material is one or several in Merlon (PC), polymethyl methacrylate (PMMA), silica gel (Silicone), polypropylene (EP), polyphenyl dioctyl phthalate glycol ester (PET) and the glass.It realizes technology, can be conventional molds injection mo(u)lding or mould and decides moulding.
The utility model being on the substrate 2 of insulating barrier with diamond-film-like (DLC) or diamond film, has improved the radiating effect of LED device with led chip 1 upside-down mounting effectively.And, strengthened the led chip heatsink transverse through deposition first heat dissipating layer and reflector on metal electrode layer, the existence in reflector has simultaneously improved the LED light extraction efficiency, has obtained the LED device of high heat radiation, high light efficiency.
The utility model adopts the COB packaging technology on the encapsulating structure of LED module device.Do box dam with barrier material; The easy height of control box dam, width and the institute regional extent of enclosing the plurality of LEDs chip on the technology has very big flexibility, makes things convenient for product is designed; And box dam glue itself has the high reliability of silica gel, can obtain high performance product.
The utility model can also have various embodiments, as the MCPCB substrate is improved, strengthens the sandwich construction that combines and strengthen the insulating Design of substrate between diamond-film-like (DLC) or diamond film and the substrate.
More than technical scheme that the utility model embodiment is provided carried out detailed introduction; Used concrete example among this paper principle and the execution mode of the utility model embodiment are set forth, the explanation of above embodiment only is applicable to the principle that helps to understand the utility model embodiment; Simultaneously, for one of ordinary skill in the art, according to the utility model embodiment, the part that on embodiment and range of application, all can change, in sum, this description should not be construed as the restriction to the utility model.
Claims (13)
1. LED device; Comprise substrate and the upside-down mounting a plurality of led chips on said substrate; Said substrate comprises metallic substrates, is grown in the insulating barrier of said metallic substrates upper surface and is grown in the metal electrode layer on the said insulating barrier; Said metal electrode layer comprises separate P district metal electrode layer and N district metal electrode layer, it is characterized in that:
Said insulating barrier adopts diamond-film-like (DLC) or diamond film to make;
Between the upper surface of said P district's metal electrode layer and N district metal electrode layer and said P district's metal electrode layer and N district metal electrode layer, be provided with first heat dissipating layer, said first heat dissipating layer adopts diamond-film-like (DLC) or diamond film to make equally;
At the upper surface of said first heat dissipating layer, or be provided with a high reflection layer at the lower surface of the P of led chip type gallium nitride.
2. LED device according to claim 1 is characterized in that:
Said P district metal electrode layer is provided with the P weld pad that makes things convenient for substrate and led chip to be electrically connected;
Said N district metal electrode layer is provided with the N weld pad that makes things convenient for substrate and led chip to be electrically connected;
Also be attached with diamond-film-like (DLC) or diamond film at the sidewall of said P weld pad and the sidewall of N weld pad.
3. LED device according to claim 1 and 2 is characterized in that:
Between said P district's metal electrode layer and N district metal electrode layer, be provided with a square groove.
4. LED device according to claim 1 and 2 is characterized in that:
Between said P district's metal electrode layer and N district metal electrode layer, be provided with an inverted trapezoidal groove.
5. LED device according to claim 1 and 2 is characterized in that:
The metal material of said metallic substrates is aluminium (Al), copper (Cu), gold (Au) or nickel (Ni).
6. LED device according to claim 1 and 2 is characterized in that:
The reflector of the individual layer shape that said high reflection layer is formed by following any material or below the multi-lamellar distributed Bragg reflecting layer that forms of multiple material cycle alternating growth:
Indium (In), aluminium (Al), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), silicon nitride (SiNx), silicon dioxide (SiO
2), alundum (Al (Al
2O
3), titanium monoxide (TiO), titanium dioxide (TiO
2), titanium sesquioxide (Ti
2O
3) and zirconium dioxide (ZrO
2).
7. a LED module device of processing according to the said LED device of claim 1 is characterized in that, comprising:
The LED device comprises substrate and the upside-down mounting a plurality of led chips on said substrate;
Box dam glue, be enclosed in said led chip around; And
The phototransformation material layer is sealed on the top of said led chip.
8. LED module device according to claim 7 is characterized in that:
On said phototransformation material layer, also be provided with an optical structure layers.
9. LED module device according to claim 8 is characterized in that:
Said optical structure layers be shaped as hemisphere, square, oval, Fresnel shape, honeycombed, peanut shape, taper shape, regular hexagon or dried persimmon shape.
10. LED module device according to claim 8 is characterized in that:
The material of said optical structure layers is Merlon (PC), polymethyl methacrylate (PMMA), silica gel (Silicone), polypropylene (EP), PETG (PET) or glass.
11., it is characterized in that according to each described LED module device of claim 7 to 10:
Said box dam glue is not extinction thermosets or white extinction thermosets not of DAM glue, milky.
12., it is characterized in that according to each described LED module device of claim 7 to 10:
Said phototransformation material layer is organic dyestuff, rare earth organic complex, rare earth phosphor or semiconductor-quantum-point.
13., it is characterized in that according to each described LED module device of claim 7 to 10:
The arrange shape of said a plurality of led chip on said substrate is square, polygon or circle.
Priority Applications (1)
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| CN2011203545261U CN202363515U (en) | 2011-09-21 | 2011-09-21 | LED device and LED module device thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203545261U CN202363515U (en) | 2011-09-21 | 2011-09-21 | LED device and LED module device thereof |
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| CN202363515U true CN202363515U (en) | 2012-08-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102290524A (en) * | 2011-09-21 | 2011-12-21 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof |
| CN103236490A (en) * | 2013-04-03 | 2013-08-07 | 大连德豪光电科技有限公司 | LED flip-chip packaged device, manufacture method of LED flip-chip packaged device, and package structure using LED flip-chip packaged device |
| CN108767102A (en) * | 2018-03-26 | 2018-11-06 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
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2011
- 2011-09-21 CN CN2011203545261U patent/CN202363515U/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102290524A (en) * | 2011-09-21 | 2011-12-21 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof |
| CN102290524B (en) * | 2011-09-21 | 2013-03-06 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof |
| CN103236490A (en) * | 2013-04-03 | 2013-08-07 | 大连德豪光电科技有限公司 | LED flip-chip packaged device, manufacture method of LED flip-chip packaged device, and package structure using LED flip-chip packaged device |
| CN103236490B (en) * | 2013-04-03 | 2016-01-13 | 大连德豪光电科技有限公司 | LED flip chip packaging, its manufacture method and use its encapsulating structure |
| CN109643743A (en) * | 2016-06-21 | 2019-04-16 | 天空公司 | LED package |
| CN108767102A (en) * | 2018-03-26 | 2018-11-06 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
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