CN107180904A - A kind of ultraviolet LED packaging - Google Patents

A kind of ultraviolet LED packaging Download PDF

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Publication number
CN107180904A
CN107180904A CN201710334523.3A CN201710334523A CN107180904A CN 107180904 A CN107180904 A CN 107180904A CN 201710334523 A CN201710334523 A CN 201710334523A CN 107180904 A CN107180904 A CN 107180904A
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CN
China
Prior art keywords
led chip
copper coating
aluminium oxide
ceramic substrate
oxide ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710334523.3A
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Chinese (zh)
Inventor
何苗
黄波
熊德平
杨思攀
周海亮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong University of Technology
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Guangdong University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong University of Technology filed Critical Guangdong University of Technology
Priority to CN201710334523.3A priority Critical patent/CN107180904A/en
Publication of CN107180904A publication Critical patent/CN107180904A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Abstract

The invention discloses a kind of ultraviolet LED packaging.The ultraviolet LED packaging includes aluminium oxide ceramic substrate, UV LED chip, copper coating, CuAlO2The solid layer of transition zone, silicones and quartz glass；The UV LED chip includes positive electrode and negative electrode, and the chip is fixed in the encapsulation groove of aluminium oxide ceramic substrate, and the plating copper coating on the surface of the aluminium oxide ceramic substrate has CuAlO between the copper coating and aluminium oxide ceramic substrate2Transition zone, the copper coating and CuAlO2Transition zone is discontinuous conductive layer, and insulation layer is set between the positive electrode and negative electrode of UV LED chip, and the insulation layer runs through whole aluminium oxide ceramic substrate surface, and copper coating is divided into two parts of insulation.The ultraviolet LED packaging has three layers of encapsulating structure, the light extraction efficiency and heat-sinking capability of UV LED chip can be improved, so as to improve the performance reliability and service life of device.

Description

A kind of ultraviolet LED packaging
Technical field
The invention belongs to ultraviolet LED technical field, more particularly, to a kind of ultraviolet LED packaging.
Background technology
LED, it is in daily life now and industrial use more and more extensively, low in energy consumption, luminous with its Response is fast, reliability height, radiation efficiency height, long lifespan, environmentally safe, compact conformation many advantages, such as obtain it is substantial amounts of The market share, is a kind of environmental protection light source of great prospect.Wherein, with LED wavelength divisions, wave-length coverage is in 320~400nm For near ultraviolet UVA, wave-length coverage UV B, wave-length coverage in 275~320nm is are far ultraviolet UVC in 100~275nm. It is increasingly deeper that the fast development of ultraviolet LED is also permeated in every profession and trade, such as silk-screen printing, polymer solidification, environmental protection, in vain Optical illumination, military detection etc., have extensive in the field such as special lighting, ultraviolet antivirus, especially Water warfare, ink solidification Market application foreground, is most to be hopeful the existing ultraviolet high-pressure mercury-vapor lamp of substitution to turn into ultraviolet source of future generation.Ultraviolet LED technology Using that will keep rapid growth, ultraviolet LED also will persistently keep height study hotspot, wherein including the envelope of ultraviolet LED naturally Dress research and development.
Comparatively, from the point of view of chip level, ultraviolet LED crystal growth quality is relatively low, and optical radiation power is not high, and LED Chip has larger power density, and the heating problem triggered is more serious.From the point of view of encapsulation rank, ultraviolet light has height Energy is also more harsh to encapsulating material, and traditional LED encapsulation structure makes the light extraction efficiency and heat-sinking capability of UV LED chip not Height, the performance of device obtains reliability and the lost of life, it is impossible to meet the high-performance of ultraviolet LED, the demand that the long-life uses.Cause This, improves the light recovery rate and heat-sinking capability of ultraviolet LED packaging, is the research emphasis of ultraviolet LED encapsulation field.
The content of the invention
The invention aims to overcome the deficiencies in the prior art, there is provided a kind of ultraviolet LED packaging.The device has There is new encapsulating structure, the light extraction efficiency and heat-sinking capability of UV LED chip can be improved, so as to improve the reliable of device performance Property, increase the service life.
Above-mentioned purpose of the present invention is achieved by the following technical programs：
A kind of ultraviolet LED packaging, including aluminium oxide ceramic substrate and UV LED chip, the UV LED chip are consolidated It is scheduled in the encapsulation groove of the aluminium oxide ceramic substrate, the UV LED chip includes positive electrode and negative electrode, in the oxidation Plating copper coating on the surface of aluminium ceramic substrate, has CuAlO between the copper coating and the aluminium oxide ceramic substrate2Transition Layer, the copper coating and CuAlO2Transition zone is discontinuous conductive layer, in the positive electrode and negative electrode of the UV LED chip Between insulation layer is set, the insulation layer runs through whole aluminium oxide ceramic substrate surface, and the copper coating is divided into insulation Two parts.
Further, the encapsulation groove includes mounting groove and groove, and the mounting groove is connected with groove, the mounting groove Upper storing quartz glass, the groove puts the UV LED chip, and the UV LED chip is encapsulated with the solid layer of silicones, institute Quartz glass is stated to be fixed on the solid layer of silicones.
Preferably, the quartz glass is quartz lens glass or quartzy plate glass.
Preferably, the groove is reflecting cup structure.
Preferably, the thickness of the top silicone layer of the UV LED chip is 0.3~1mm.
Preferably, the thickness of the copper coating is 50~300 μm, the CuAlO2The thickness of transition zone is 3~5 μm.
Further, the insulation layer is banding, and line is symmetrical centered on the banding.
Further, when the UV LED chip uses upside-down mounting, the width of the banding is less than the UV LED chip Positive electrode and negative electrode spacing；When the UV LED chip uses formal dress, the width of the banding is less than or equal to described The width of UV LED chip.
Preferably, the copper coating is to be formed by direct copper method under the conditions of 1060~1085 DEG C.
Compared with prior art, the invention has the advantages that：
1. the present invention by silicone layer and quartz lens twice encapsulating structure, then with the sapphire in LED chip, formed The structure that refractive index is successively decreased, can eliminate the light losing of total reflection, advantageously reduce Fresnel loss of the light in communication process.
2. the groove that aluminium oxide ceramic substrate is provided with the present invention has the side wall of reflecting cup structure, i.e. groove to tilt Face, is effectively reflected ultraviolet light jointly with the minute surface of copper coating formation, solid suction of the layer to ultraviolet light of reduction silicones Receive, increase the recovery rate of ultraviolet light.
3. by the plating copper coating on aluminium oxide ceramic substrate in the present invention, and between copper coating and aluminium oxide ceramics Form CuAlO2Transition zone, not only increase between aluminium oxide ceramic substrate and copper coating it is deposited connect intensity, also improve simultaneously The capacity of heat transmission between aluminium oxide ceramic substrate and copper coating, so that the heat-sinking capability of ultraviolet LED packaging is improved,
4. the copper coating and CuAlO of the present invention2Transition zone is discontinuous conductive layer, in the positive electrode of UV LED chip Insulation layer is set between negative electrode, and the insulation layer runs through whole aluminium oxide ceramic substrate surface, and copper coating is divided into insulation Two parts, so as to realize the non-shorting connection of the both positive and negative polarity and power positive cathode of UV LED chip, complete package support and core The electrical connection of piece.
Brief description of the drawings
Fig. 1 is the dimensional structure diagram of aluminium oxide ceramic substrate in ultraviolet LED packaging.
Fig. 2 be ultraviolet LED packaging structure I of the present invention along along Fig. 1 A-A' to vertical section structure schematic diagram.
Fig. 3 be ultraviolet LED packaging structure II of the present invention along along Fig. 1 A-A' to vertical section structure schematic diagram.
Fig. 4 be ultraviolet LED packaging structure III of the present invention along along Fig. 1 A-A' to vertical section structure schematic diagram.
Fig. 5 be ultraviolet LED packaging structure IV of the present invention along along Fig. 1 A-A' to vertical section structure schematic diagram.
Embodiment
Below in conjunction with the accompanying drawings and its specific embodiment further illustrates present disclosure, but it should not be construed as to invention Limitation.
Fig. 1 is the dimensional structure diagram of aluminium oxide ceramic substrate in ultraviolet LED packaging of the present invention.From aluminum oxide pottery The groove-bottom aspect of porcelain substrate 111 has one with the symmetrical arrowband of center line to the top layer of substrate, belongs to no copper-plated region and is Insulation layer.So, the insulating properties of of aluminium oxide ceramics 111 itself divide into conductive copper coating 131 two parts of insulation.
Fig. 2-Fig. 5 be respectively ultraviolet LED packaging structure I, II, III and IV of the present invention along along Fig. 1 A-A' to vertical profile Face structural representation.A kind of ultraviolet LED packaging includes UV LED chip 101, aluminium oxide ceramic substrate 111, CuAlO2Cross Cross the solid layer 141 of layer, copper coating 131, silicones and quartz glass 151.UV LED chip 101 is fixed on aluminium oxide ceramic substrate In 111 encapsulation groove, encapsulation groove includes mounting groove and groove, and mounting groove is connected with groove, and the groove is bowl structure, is installed By inclined plane transition between the step surface a of groove and the bottom surface b of groove, reflecting cup structure is formed, the minute surface with the formation of copper coating 131 Ultraviolet light is effectively reflected jointly, increases the recovery rate of ultraviolet light.
The step surface a of mounting groove puts quartz glass 151, and silica gel and silicones are scribbled on the step surface a of mounting groove, even Quartz glass 151 and step surface a are connect, step surface a is played a part of " connection+sealing ", while for carrying quartz glass 151.UV LED chip 101 is seated on the bottom surface b of groove, and UV LED chip 101 includes positive electrode 121 and negative electrode 122, There is space between positive electrode 121 and negative electrode 122.The plating copper coating 131 on the surface of aluminium oxide ceramic substrate 111, the copper Coating 131 is top layer, mounting groove by direct copper method in aluminium oxide ceramic substrate 111 under the conditions of 1060~1085 DEG C Formed with the surface of groove.There is CuAlO between copper coating 131 and aluminium oxide ceramic substrate 1112Transition zone, the copper coating To be formed by direct copper method under the conditions of 1060~1085 DEG C, deposited copper cross Cheng Qian or during under oxygen ambient conditions, Make to form CuAlO between copper coating 131 and aluminium oxide ceramic substrate 1112Transition zone, so as to strengthen copper coating 131 and aluminum oxide Deposited between ceramic substrate 111 connects intensity.The thickness of copper coating is between 50~300 μm, CuAlO2Layer is between 3~5 μm.This Sample, in copper coating 131, CuAlO2The passage of heat transfer is formed between transition zone and aluminium oxide ceramic substrate 111, is reduced CuAlO2Temperature difference between the copper coating 131 and aluminium oxide ceramic substrate 111 at transition zone two ends.Compared to traditional aluminium base Encapsulation, present invention plating copper coating on aluminium oxide ceramic substrate, and form between copper coating and aluminium oxide ceramics CuAlO2 The structure of transition zone can be effectively reduced thermal resistance, improve the capacity of heat transmission between aluminium oxide ceramic substrate and copper coating, from And improve the heat-sinking capability of ultraviolet LED packaging.
Copper coating 131 and CuAlO2Transition zone is symmetrical, non-in the groove inner surface of aluminium oxide ceramic substrate 111 Two parts of connection.Copper coating 131 and CuAlO2Transition zone is discontinuous conductive layer, in the positive electrode 121 of UV LED chip Insulation layer is set between negative electrode 122, the symmetrical banding of line centered on the insulation layer, through whole aluminium oxide ceramic substrate table Face, copper coating 131 is divided into two parts of insulation, and upside-down mounting mode is used in Fig. 2 and Fig. 4 ultraviolet LED packaging I and III LED chip is installed, the width of the insulation layer is determined according to the size of chip, is less than the positive electricity of UV LED chip 101 Pole 121 and the spacing of negative electrode 122.The positive electrode 121 and negative electrode 122 of UV LED chip 101 are respectively welded in insulation layer Electrical connection, i.e. aluminium oxide ceramic substrate 111 and two parts copper coating separated by insulation layer are completed on the copper coating 131 on both sides 131 are monolithically fabricated the both positive and negative polarity of circuit.And installed in Fig. 3 and Fig. 5 ultraviolet LED packaging II and IV using formal dress mode LED chip, the width of the insulation layer is then suitable with chip size or less than die bottom surface width dimensions, because can pass through Bonding gold thread length, its length can be designed according to actual needs, will be connected in the positive electrode 121 and negative electrode of LED chip 101 122 bonding gold threads are respectively welded in completing electrical connection on the copper coating 131 on insulation layer both sides, to realize LED chip 101 positive electrode 121 and negative electrode 122 is separated, i.e. aluminium oxide ceramic substrate 111 and two parts copper coating separated by insulation layer 131 are monolithically fabricated the both positive and negative polarity of circuit.
After UV LED chip 101 is welded in the bottom portion of groove of the substrate of aluminium oxide ceramics 111, use to ultraviolet UV LED chip 101 is packaged and solidified, the silicon tree after solidification with the solid layer 141 of silicones by transmissivity very high silicones Lipid layer 141 is flexible, and its relatively low mechanical strength can preferably protect UV LED chip.Silicones fills up groove, in figure The silicones also fills up the positive electrode 121 of insulation layer and UV LED chip 101 in 2 and Fig. 4 ultraviolet LED packaging I and III The silicones also fills up insulation layer in space between negative electrode 122, Fig. 3 and Fig. 5 ultraviolet LED packaging II and IV Space, in whole encapsulating structure, the thickness d of the solid layer of the surface silicones of UV LED chip 101 is controlled within 1mm, with to the greatest extent Possibly reduce the absorption loss of silicones 141 pairs of ultraviolet light of solid layer.
In aluminium oxide ceramic substrate 111 provided with mounting groove to install quartz glass 151.Quartz glass 151 is seated in On the step surface a of mounting groove, as shown in Figures 2 and 3, quartz glass 151 is preferably quartz lens glass, or such as Fig. 4 and Fig. 5 It is shown, the quartzy plate glass of selection.Illustrate by taking the quartz lens glass in Fig. 2 and Fig. 4 as an example, quartz glass 151 is fixed on silicon On the solid layer 141 of resin, the solid layer 141 of silicones and the twice encapsulating structure of quartz lens glass 151 can significantly improve light extraction efficiency, this It is due to the quartz lens glass that the silicones that has used refractive index to be 1.54 and refractive index are 1.46, is 1.76 with refractive index Sapphire in LED chip, forms between LED chip, silicones and quartz lens glass after the packed solidification of LED chip and reflects The three-decker that rate is successively decreased, eliminates the light losing of total reflection, advantageously reduces Fresnel loss of the light in communication process. In addition, there is the groove that aluminium oxide ceramic substrate 111 is provided with the side wall of reflecting cup structure, i.e. groove to be inclined plane, with copper coating 131 smooth surfaces formed can effectively light reflection ultraviolet line, therefore, the absorption of reduction silicones 141 pairs of ultraviolet of solid layer increases The recovery rate of big ultraviolet light.The performance and used life of the solid layer 141 of silicones is also ensure that simultaneously, improves quartz glass The reliability of installation is connected between 151 and the solid layer 141 of silicones.
Above-described embodiment is preferably embodiment, but embodiments of the present invention are not by above-described embodiment of the invention Limitation, other any Spirit Essences without departing from the present invention and the change made under principle, modification, replacement, is combined and simplification, Equivalent substitute mode is should be, is included within protection scope of the present invention.

Claims (9)

1. a kind of ultraviolet LED packaging, including aluminium oxide ceramic substrate and UV LED chip, the UV LED chip are fixed In the encapsulation groove of the aluminium oxide ceramic substrate, the UV LED chip includes positive electrode and negative electrode, it is characterised in that The plating copper coating on the surface of the aluminium oxide ceramic substrate, has between the copper coating and the aluminium oxide ceramic substrate CuAlO2Transition zone, the copper coating and CuAlO2Transition zone is discontinuous conductive layer, in the positive electricity of the UV LED chip Insulation layer is set, and the insulation layer runs through whole aluminium oxide ceramic substrate surface, by the copper coating point between pole and negative electrode It is divided into two parts of insulation.
2. ultraviolet LED packaging according to claim 1, it is characterised in that the encapsulation groove includes mounting groove and recessed Groove, the mounting groove is connected with groove, and quartz glass is put on the mounting groove, and the groove puts the ultraviolet LED core Piece, the UV LED chip is encapsulated with the solid layer of silicones, and the quartz glass is fixed on the solid layer of silicones.
3. ultraviolet LED packaging according to claim 2, it is characterised in that the quartz glass is quartz lens glass Glass or quartzy plate glass.
4. ultraviolet LED packaging according to claim 2, it is characterised in that the groove is reflecting cup structure.
5. ultraviolet LED packaging according to claim 2, it is characterised in that the top silicon tree of the UV LED chip The thickness of lipid layer is 0.3~1mm.
6. ultraviolet LED packaging according to claim 1, it is characterised in that the thickness of the copper coating is 50~300 μm, the CuAlO2The thickness of transition zone is 3~5 μm.
7. ultraviolet LED packaging according to claim 1, it is characterised in that the insulation layer is banding, the banding Centered on line it is symmetrical.
8. ultraviolet LED packaging according to claim 7, it is characterised in that the UV LED chip uses upside-down mounting When, the width of the banding is less than the positive electrode of the UV LED chip and the spacing of negative electrode；The UV LED chip is adopted When using formal dress, the width of the banding is less than or equal to the width of the UV LED chip.
9. ultraviolet LED packaging according to claim 1, it is characterised in that the copper coating is by direct copper Method is formed under the conditions of 1060~1085 DEG C.
CN201710334523.3A 2017-05-12 2017-05-12 A kind of ultraviolet LED packaging Pending CN107180904A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710334523.3A CN107180904A (en) 2017-05-12 2017-05-12 A kind of ultraviolet LED packaging

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Application Number Priority Date Filing Date Title
CN201710334523.3A CN107180904A (en) 2017-05-12 2017-05-12 A kind of ultraviolet LED packaging

Publications (1)

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CN107180904A true CN107180904A (en) 2017-09-19

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107731989A (en) * 2017-11-21 2018-02-23 苏州市悠文电子有限公司 Decanter type light emitting diode
CN108550677A (en) * 2018-04-03 2018-09-18 江苏鸿利国泽光电科技有限公司 A kind of ultraviolet LED packaging
CN109103319A (en) * 2018-08-21 2018-12-28 华中科技大学鄂州工业技术研究院 A kind of deep ultraviolet LED encapsulation structure and its packaging method
CN111106225A (en) * 2019-12-31 2020-05-05 厦门市三安光电科技有限公司 Ultraviolet LED packaging structure
CN113825943A (en) * 2019-03-11 2021-12-21 亮锐有限责任公司 Light extraction bridge in a cup

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CN205406561U (en) * 2016-01-26 2016-07-27 易美芯光（北京）科技有限公司 Ultraviolet LED device packaging hardware
CN106287580A (en) * 2015-06-02 2017-01-04 深圳市光峰光电技术有限公司 Wavelength converter and preparation method thereof, related lighting fixtures and optical projection system
CN207038549U (en) * 2017-05-12 2018-02-23 广东工业大学 A kind of ultraviolet LED packaging

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JP2001144308A (en) * 1999-11-12 2001-05-25 Hitachi Cable Ltd Manufacturing method for photosensor
US20060018120A1 (en) * 2002-11-26 2006-01-26 Daniel Linehan Illuminator and production method
JP2005183897A (en) * 2003-11-27 2005-07-07 Kyocera Corp Package for housing light emitting device, light emitting device, and lighting system
JP2007201346A (en) * 2006-01-30 2007-08-09 Mitsuboshi Belting Ltd Ceramics circuit board and its manufacturing method
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107731989A (en) * 2017-11-21 2018-02-23 苏州市悠文电子有限公司 Decanter type light emitting diode
CN108550677A (en) * 2018-04-03 2018-09-18 江苏鸿利国泽光电科技有限公司 A kind of ultraviolet LED packaging
CN109103319A (en) * 2018-08-21 2018-12-28 华中科技大学鄂州工业技术研究院 A kind of deep ultraviolet LED encapsulation structure and its packaging method
CN113825943A (en) * 2019-03-11 2021-12-21 亮锐有限责任公司 Light extraction bridge in a cup
CN111106225A (en) * 2019-12-31 2020-05-05 厦门市三安光电科技有限公司 Ultraviolet LED packaging structure
CN111106225B (en) * 2019-12-31 2021-07-02 厦门市三安光电科技有限公司 Ultraviolet LED packaging structure

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