CN206236704U

CN206236704U - The structure of LED flip-chip substrates

Info

Publication number: CN206236704U
Application number: CN201621273609.7U
Authority: CN
Inventors: 郭亚楠; 张韵; 王军喜; 李晋闽
Original assignee: Institute of Semiconductors of CAS
Current assignee: Institute of Semiconductors of CAS
Priority date: 2016-11-24
Filing date: 2016-11-24
Publication date: 2017-06-09
Anticipated expiration: 2026-11-24

Abstract

A kind of structure of LED flip-chip substrates, it is characterised in that including：One substrate, the substrate has a groove downwards；One insulating barrier, it is produced on substrate, and the insulating barrier simultaneously covers the surface of groove；There is one isolation channel one reflective metal layer, its surface for being produced on insulating barrier, the centre of the reflective metal layer, and reflective metal layer is divided into two parts by the isolation channel；Two blocks of metal electrodes, its bottom for being produced on groove is located relatively at the both sides of isolation channel.The utility model helps to improve LED light extraction efficiency and heat dispersion.

Description

The structure of LED flip-chip substrates

Technical field

The utility model belongs to LED encapsulation technologies field, and in particular to a kind of structure of LED flip-chip substrates.

Background technology

Since the nineties in last century, GaN base LED causes extensive concern and achieves swift and violent development.GaN base LED has Have that Wavelength tunable, light and flexible, energy consumption are low, operating voltage is low, directional lighting, pollution-free, long lifespan, response time are fast etc. significantly Advantage, wavelength covering green glow, blue light, purple light, ultraviolet regime, be widely used in various instructions, display, decoration, backlight, commonly The fields such as illumination, urban landscape, visible light communication, polymer solidification, sterilizing.

The device architecture of GaN base LED has three kinds substantially：Traditional positive assembling structure, inverted structure and vertical stratification.Wherein, LED Flip chip technology (fct) have the advantages that low thermal resistance, light extraction efficiency high, efficient encapsulation and can integrated anti-static device, especially fit The high-power LED chip in, will be the main flow of coming years development.Flip chip technology is welded LED by planting ball bonding or eutectic Flip-chip is on the substrate with more high thermal conductivity so that the heat of LED can be derived quickly from chip, improve LED core The heat-sinking capability of piece, improves reliability and the life-span of LED.In terms of luminescent properties, using inverted structure, p-type electricity can be avoided The problem that pole is in the light, CURRENT DISTRIBUTION can be made evenly by electrode design, reduce device voltage.Additionally, flip-chip can be made Exempt from gold thread encapsulation, so as to the dead lamp problem for avoiding gold thread lesion ribbon from, greatly improve the reliability of device.

Simulative display, the light that major part gives off from LED active areas is all restricted to waveguide mode, and about 66% light is limited Make in GaN epitaxial layer, finally with the less angle of horizontal direction from the end face of epitaxial layer with outgoing.Traditional LED upside-down mountings Substrate is usually planar structure, and is generally used in combination support with reflector and encapsulates, but reflector and chip distance Farther out.Therefore it is easy to be inhaled by parts such as the electrode on substrate, encapsulating material and supports from the light of the end face outgoing of LED epitaxial layers Receive, be unfavorable for the maximization of light extraction efficiency.

Utility model content

The purpose of this utility model is to provide a kind of structure of LED flip-chip substrates, helps to improve LED light extraction efficiency and dissipates Hot property.

The technical scheme that the utility model is used for：

The utility model provides a kind of structure of LED flip-chip substrates, it is characterised in that including：

One substrate, the substrate has a groove downwards；

One insulating barrier, it is produced on substrate, and the insulating barrier simultaneously covers the surface of groove；

There is one isolation channel one reflective metal layer, its surface for being produced on insulating barrier, the centre of the reflective metal layer, should be every Reflective metal layer is divided into two parts from groove；

Two blocks of metal electrodes, its bottom for being produced on groove is located relatively at the both sides of isolation channel.

Wherein described ditch profile is shaped as trapezoidal or arc.

Wherein the depth of isolation channel reaches the surface of substrate or insulating barrier.

Wherein the material of substrate is silicon, PCB or aluminium nitride ceramics.

Wherein the material of insulating barrier is silica, silicon nitride or aluminum oxide.

Compared with prior art, the utility model has the advantage of setting groove on LED flip-chip substrates, and in groove The metal level with high reflectance is placed on surface, can closely change LED flip chip from the propagation side of the light of end face outgoing To, make its upward outgoing, the absorption and loss of end face emergent light are reduced, improve the light extraction efficiency of LED；While substrate thickness It is thinning, also reduce the series resistances of system.

Brief description of the drawings

To further illustrate technology contents of the present utility model, with reference to embodiments and after accompanying drawing detailed description such as, its In：

Fig. 1 is the profile of LED flip-chip substrates of the present utility model；

Fig. 2 is the top view of LED flip-chip substrates of the present utility model；

Fig. 3 is the LED flip chip and the profile of LED flip-chip substrates after upside-down mounting.

Specific embodiment

Refer to shown in Fig. 1-Fig. 2, the utility model provides a kind of structure of LED flip-chip substrates, it is characterised in that bag Include：

One substrate 11, the substrate 11 has a groove 11 ' downwards, and the section of groove 11 ' is shaped as trapezoidal or arc, institute The shape for stating the vertical view of groove 11 ' can be square, circular or other figures；The material of the substrate 11 is silicon, PCB or aluminium nitride pottery Porcelain, can be with straight forming or via being etched into；LED flip chip A can be placed in the groove 11 ', therefore the groove 11 ' bottom size should be greater than the size of LED flip chip A；The depth of the groove 11 ' should be not less than metal electrode 14, LED The summation of the thickness of each epitaxial layer of flip-chip A and the electrode of LED flip chip A；

One insulating barrier 12, it makes on the substrate 11, and the insulating barrier 12 simultaneously covers the surface of groove 11 ', the insulating barrier 12 material is silica, silicon nitride or aluminum oxide；If the substrate 11 is in itself insulation, then insulating barrier 12 can be saved Slightly；

There is one isolation one reflective metal layer 13, its surface for being produced on insulating barrier 12, the centre of the reflective metal layer 13 Reflective metal layer 13 is divided into two parts by groove 13 ', the isolation channel 13 ', and the depth of the isolation channel 13 ' can reach substrate 11；Such as Fruit application scenario has higher requirements to leakage current, and the depth of the isolation channel 13 ' can also reach the surface of insulating barrier 12, i.e., described The centre of insulating barrier also forms isolation moat structure；The material of the reflective metal layer 13 is Al bases, Ag bases or Au Base Metals, to institute The reflectivity for stating the light that LED flip chip A sends is not lower than 80%；

Two blocks of metal electrodes 14, its bottom for being produced on groove 11 ' is located relatively at the both sides of isolation channel 13 '；Described two pieces Metal electrode 14 is located on reflective metal layer 13, and forms electricity interconnection respectively with reflective metal layer 13.It is follow-up to ensure thickness The carrying out of reverse installation process, the material of the metal electrode 14 is usually the alloy of Au Base Metals system or AuSn etc..

Embodiment of the present utility model

Refer to shown in Fig. 3, Fig. 3 is the profile of LED flip chip A and the LED flip-chip substrate after upside-down mounting, and it is by one LED chip is inverted on substrate, and the depth of the groove 11 ' should be greater than each epitaxial layer of metal electrode 14, LED flip chip A With the summation of the thickness of the electrode of LED flip chip A.

Particular embodiments described above, purpose, technical scheme and beneficial effect to this case have been carried out further in detail Explanation, it should be understood that the foregoing is only specific embodiment of the utility model, is not limited to this practicality new Type, all within spirit of the present utility model and principle, any modification, equivalent substitution and improvements done etc. should be included in this Within the protection domain of utility model.

Claims

1. a kind of structure of LED flip-chip substrates, it is characterised in that including：

One substrate, the substrate has a groove downwards；

There is one isolation channel one reflective metal layer, its surface for being produced on insulating barrier, the centre of the reflective metal layer, the isolation channel Reflective metal layer is divided into two parts；

2. the structure of LED flip-chip substrates according to claim 1, it is characterised in that the shape of wherein described ditch profile It is trapezoidal or arc.

3. the structure of LED flip-chip substrates according to claim 1, it is characterised in that wherein the depth of isolation channel reaches base The surface of plate or insulating barrier.

4. the structure of LED flip-chip substrates according to claim 1, it is characterised in that wherein the material of substrate is silicon, PCB Or aluminium nitride ceramics.

5. the structure of LED flip-chip substrates according to claim 1, it is characterised in that wherein the material of insulating barrier is dioxy SiClx, silicon nitride or aluminum oxide.