CN106784243B - A kind of deep ultraviolet LED packaging and preparation method thereof - Google Patents
A kind of deep ultraviolet LED packaging and preparation method thereof Download PDFInfo
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- CN106784243B CN106784243B CN201611228510.XA CN201611228510A CN106784243B CN 106784243 B CN106784243 B CN 106784243B CN 201611228510 A CN201611228510 A CN 201611228510A CN 106784243 B CN106784243 B CN 106784243B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention discloses a kind of deep ultraviolet LED packagings, include metal substrate, deep ultraviolet chip, optical element, intermediate insulating layer and the first metal eutectic bonded layer；The positive pole zone of the metal substrate and negative regions are separated by intermediate insulating layer；Deep ultraviolet chip is fixed on metal substrate, and deep ultraviolet chip is electrically connected with the positive pole zone of metal substrate, negative regions；Optical element is fixed on metal substrate by the first metal eutectic bonded layer, and optical element is fully wrapped around by deep ultraviolet chip；It further include having SiO2Insulating layer is covered in the inner surface of intermediate insulating layer.The invention also discloses a kind of preparation methods of deep ultraviolet LED packaging.Deep ultraviolet LED packaging of the present invention, not only luminous power is high, and thermal diffusivity is good, and the reliability and service life of product are significantly improved, and encapsulating structure is simple, advantageously reduces preparation cost；And for preparation method, simple for process, suitable the flow work, preparation efficiency height.
Description
Technical field
The invention belongs to deep ultraviolet LED encapsulation technology fields, and in particular to a kind of deep ultraviolet LED packaging and its preparation
Method.
Background technique
In ultraviolet light, wavelength is referred to as deep UV in 200 nanometers to 350 nanometers of light.And deep ultraviolet LED
(DUVLED) because of it efficiently, environmental protection, energy conservation, the advantages such as reliable, in illumination, sterilization, medical treatment, printing, biochemistry detection, highdensity
The fields such as information storage and secure communication have great application value, these advantages are that common ultraviolet LED institute is incomparable
's.
Since the wavelength of deep ultraviolet LED is shorter, energy is very strong, causes material property deterioration serious, so to encapsulation technology
High requirement is proposed with encapsulating material.But in traditional deep ultraviolet LED encapsulation technology, since adhesive layer etc. is in material
There are certain defects in terms of matter, and UV light is caused easily to be absorbed by adhesive layer, so that adhesive layer is easy flavescence, aging etc., in turn
Lead to deep ultraviolet LED there are luminous powers not high, poor radiation, reliability low and the shortcomings such as service life is short.
For example, application No. is 201420396320.9 Chinese patents to disclose a kind of deep ultraviolet LED component encapsulating structure,
Including ceramics bracket 1 and the deep ultraviolet chip 5 being located on 1 pedestal die bond position of ceramics bracket, deep ultraviolet chip 5 is connected by silver wire 6
It is connected to positive and negative electrode, passes through adhesives 4 on ceramics bracket 1 and is bonded with quartz lens 2, this encapsulating structure has following lack
Fall into: (1) adhesives is easy to absorb UV light and cause self deterioration, and so as to cause LED component luminous power, low, reliability is not
It is high；(2) encapsulating structure is more complicated, and cost of manufacture is higher, poor radiation, and ceramics bracket and quartz lens use bonding side
Formula is attached, and reliability is also not very high.
For another example, application No. is 201520585540.0 Chinese patents to disclose a kind of deep ultraviolet COB light source, the base
Plate is equipped with groove, is equipped with supporting station, the height of supporting station formation platform lower than the surface of substrate along the top edge of groove
Stepped structure, the edge of the glass cover-plate are mounted on the supporting station, the top surface of glass cover-plate and the either flush of substrate；
The glass cover-plate is equipped with pressure ring, and the outer edge of glass cover-plate is pressed on the inside of the pressure ring, is pressed in substrate on the outside of pressure ring
Surface.In this patent, glass cover-plate and substrate are fastened and connected by setting ring structure, so as to avoid because using viscous
Connect form and to lead to problems such as bonding agent that aging, LED component reliability easily occurs not high, but its encapsulating structure is equally relatively more multiple
Miscellaneous, cost of manufacture is higher, and thermal diffusivity is also poor.
Summary of the invention
The present invention is to make up the deficiencies in the prior art, on the one hand provides a kind of deep ultraviolet LED packaging, not only greatly
Ground improves LED luminous power, and thermal diffusivity is good, and the reliability and service life of product are significantly improved, and encapsulating structure
It is extremely simple, advantageously reduce preparation cost.
The present invention be reach its purpose, the technical solution adopted is as follows:
A kind of deep ultraviolet LED packaging, it is characterised in that:
It include metal substrate, deep ultraviolet chip, optical element, intermediate insulating layer and the first metal eutectic bonded layer；
The positive pole zone of the metal substrate and negative regions are separated by the intermediate insulating layer；
The deep ultraviolet chip is fixed on the metal substrate, and the deep ultraviolet chip and the metal substrate are just
Polar region domain, negative regions electrical connection；
The optical element is fixed on the metal substrate by the first metal eutectic bonded layer, the optics member
Part is fully wrapped around by the deep ultraviolet chip.
It further, further include having SiO2Insulating layer；The SiO2Insulating layer is covered in the interior table of the intermediate insulating layer
Face.
It further, further include having the second metal eutectic bonded layer；The deep ultraviolet chip is total by second metal
Brilliant bonded layer is fixed on the metal substrate.
Further, the deep ultraviolet chip is vertical chip；The second metal eutectic bonded layer is located at the metal
On the negative regions of substrate；The vertical chip passes through the cathode area of the second eutectic metal bonding layer and the metal substrate
Domain electrical connection, the vertical chip are electrically connected by gold thread with the positive pole zone of the metal substrate.
Further, the deep ultraviolet chip is flip-chip；The positive pole zone of the metal substrate and negative regions are equal
Equipped with the second metal eutectic bonded layer, the flip-chip passes through the second metal eutectic bonded layer and the Metal Substrate
The positive pole zone of plate, negative regions electrical connection.
Further, the outer surface of the optical element is in multi-step formula structure, and the outer surface of the optical element
Equipped with roughening microstructured layers.
Further, the metal substrate is planar metal copper sheet；The intermediate insulating layer is made of SMC material；Institute
Optical element is stated to be made of inorganic transparent material.
Another aspect of the invention accordingly provides a kind of preparation method of deep ultraviolet LED packaging, encapsulates work
Skill is simple and easy, is suitble to the flow work, and preparation efficiency is high, advantageously reduces preparation cost, which is characterized in that including following step
It is rapid:
S1: being divided into positive pole zone and negative regions for metal substrate, puts by the positive and negative anodes of the adjacent metal substrate
Sequentially opposite mode carries out array arrangement to multiple metal substrates；
S2: intermediate insulating layer is filled between the positive pole zone and negative regions of each metal substrate；
S3: installing fixed deep ultraviolet chip in the upper surface of each metal substrate, and make each deep ultraviolet chip with
The positive pole zone of the corresponding metal substrate, negative regions electrical connection；
S4: selected optical component first makes the first metal eutectic bonded layer in the upper surface of each metal substrate, then
Optical element is fixed on the metal substrate by the first metal eutectic bonded layer in a manner of eutectic bonding, and makes each institute
It is fully wrapped around by the optical element to state deep ultraviolet chip；
S5: single LED device, test, packaging are cut into.
Further, it after the step S2, before the step S3, is covered in the upper surface of the intermediate insulating layer
Make SiO2Insulating layer.
Further, in the step S3, the second metal eutectic key first is made in the upper surface of each metal substrate
Layer is closed, then each deep ultraviolet chip is mounted on institute by the second metal eutectic bonded layer in a manner of eutectic bonding
It states on metal substrate.
Compared with the existing technology, the present invention has following advantageous effects:
(1) the present invention provides a kind of deep ultraviolet LED packagings, include metal substrate, deep ultraviolet chip, optics member
Part, intermediate insulating layer and the first metal eutectic bonded layer.Wherein, optical element is fixed on gold by the first metal eutectic bonded layer
Belong on substrate, in other words, in the present invention, optical element is connect by eutectic bonding mode with metal substrate, instead of use
Bonding agent is attached this traditional fixed form to optical element, substrate, and connection structure is stronger, and avoids viscous
The problems such as aging itself occurs due to absorbing UV light for agent, LED product luminous power is low is connect, to greatly improve LED production
Luminescent properties, reliability and the service life of product.Moreover, the present invention devises one kind completely newly according to the structure feature of LED support
Encapsulating structure, not only overall structure is extremely simple, and manufacture craft is easy, advantageously reduces preparation cost, and thermal diffusivity
Can be splendid, be conducive to the reliability and service life that improve LED product.
It (2) further include having SiO the present invention provides a kind of deep ultraviolet LED packaging2Insulating layer is covered in centre
The inner surface of insulating layer is absorbed to obstruct UV light by intermediate insulation layer material, effectively prevents deep ultraviolet chip work
As when the high-energy that discharges and the problems such as cause intermediate insulating layer material aging, LED component luminous power to reduce, to improve
Luminescent properties, reliability and the service life of LED product.
(3) the corresponding a kind of deep ultraviolet LED packaging preparation method provided of the present invention, preparation is simple, at
It is ripe, it is suitble to the flow work, therefore, the present invention is improving the luminescent properties of deep ultraviolet LED packaging, reliability and using the longevity
Preparation efficiency can also be improved while life, be very beneficial for reducing preparation cost.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram (cut away view) of deep ultraviolet LED packaging described in embodiment 1；
Fig. 2 is a kind of structural schematic diagram (cut away view) of deep ultraviolet LED packaging as described in example 2；
Fig. 3 is a kind of schematic diagram of preparation flow of deep ultraviolet LED packaging described in embodiment 1.
Appended drawing reference:
1, metal substrate；11, the positive pole zone of metal substrate；12, the negative regions of metal substrate；2, deep ultraviolet chip；
3, optical element；31, it is roughened microstructured layers；4,SiO2Insulating layer；5, intermediate insulating layer；6, the first metal eutectic bonded layer；7,
Second metal eutectic bonded layer；8, gold thread.
Specific embodiment
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention.But the present invention can be with
It is different from the other modes of this description much to implement, those skilled in the art can be without violating the connotation of the present invention
Similar popularization is done, therefore the present invention is not limited by the specific embodiments disclosed below.
Embodiment 1
Present embodiment discloses a kind of deep ultraviolet LED packagings, as shown in Figure 1, including metal substrate 1, deep ultraviolet
Chip 2, optical element 3, intermediate insulating layer 5 and the first metal eutectic bonded layer 6.
Wherein, the positive pole zone 11 of metal substrate 1 and negative regions 12 are separated by intermediate insulating layer 5；Deep ultraviolet chip 2
It is fixed on metal substrate 1, and deep ultraviolet chip 2 is electrically connected with the positive pole zone 11 of metal substrate 1, negative regions 12.
Wherein, optical element 3 is fixed on metal substrate 1 by the first metal eutectic bonded layer 6, and optical element 3 will be deep
Ultraviolet chip 2 is fully wrapped around.In other words, in the present invention, using metal eutectic bonding pattern by optical element 3 and metal substrate
1 combines, instead of traditional bonding way and Automatic manual transmission connection type, to not only avoid bonding agent because a large amount of
It absorbs UV light and leads to that itself is easy to aging, LED component luminous power is low, and in the reliability for improving LED component
With encapsulating structure is also greatly simplified on the basis of service life, be beneficial to improve the preparation efficiency, reduce cost of manufacture, improve
The heat dissipation performance of LED product.
In the present invention, using metal material as substrate, for ceramics or sapphire substrate, metal is total
The technique of crystalline substance bonding is simpler, is conducive to improve packaging efficiency.
In traditional deep ultraviolet LED encapsulation technology, because there is also certain defects in terms of material for intermediate insulating layer etc., lead
UV light is caused easily to be absorbed by intermediate insulating layer, so that intermediate insulation layer material is easy flavescence, aging etc., so as to cause deep ultraviolet
The luminous power of LED is not high, reliability is low, service life is short etc..Therefore, in the present embodiment, deep ultraviolet LED encapsulation
Device further includes having SiO2Insulating layer 4, as shown in Figure 1, SiO2Insulating layer 4 is covered in the inner surface of intermediate insulating layer 5, greatly
Improve the air-tightness of deep ultraviolet LED component encapsulation.It is designed based on the structure, SiO2Insulating layer 4 has obstructed a large amount of shortwave types
UV light is directly absorbed by intermediate insulating layer 5, not only greatlys improve the light extraction efficiency of deep ultraviolet LED, but also reduces centre
The material aging speed of insulating layer 5, so that the reliability and service life of LED product are significantly improved.
Specifically, deep ultraviolet LED packaging described in the present embodiment further includes having the second metal eutectic bonded layer 7, it is deep
Ultraviolet chip 2 is fixed on metal substrate 1 by the second metal eutectic bonded layer 7.For traditional bonding way, altogether
The connection structure of crystalline substance bonding is stronger, is conducive to the reliability and service life that improve product.
More specifically, in the present embodiment, as shown in Figure 1, deep ultraviolet chip 2 is vertical chip, the second metal eutectic key
Layer 7 is closed to be only located on the negative regions 12 of metal substrate 1；Deep ultraviolet chip 2 (specially vertical chip) passes through the second eutectic gold
Belong to bonded layer 7 be electrically connected with the negative regions 12 of metal substrate 1, deep ultraviolet chip 2 (specially vertical chip) pass through gold thread 8 and
The positive pole zone 11 of metal substrate 1 is electrically connected.
Certainly, in the present invention, the second metal eutectic bonded layer 7 can also be only located at the positive pole zone 11 of metal substrate 1
On；The positive pole zone 11 that deep ultraviolet chip 2 (specially vertical chip) passes through the second eutectic metal bonding layer 7 and metal substrate 1
Electrical connection, deep ultraviolet chip 2 are electrically connected by gold thread 8 with the negative regions 12 of metal substrate 1.In other words, similar simple change
It changes and belongs to equivalent protection range of the invention.
In the present embodiment, as shown in Figure 1, the outer surface of optical element 3 is in multi-step formula structure, then optical element 3
Refractive index gradually decreased with step, reduce the absorption etc. of the total internal reflection loss, P-type electrode of deep ultraviolet light, to mention
The high light extraction efficiency of deep ultraviolet LED.Moreover, in the present embodiment, as shown in Figure 1, the outer surface of optical element 3 is equipped with roughening
Microstructured layers 31 are conducive to the extraction efficiency for improving light.
In the present embodiment, as shown in Figure 1, metal substrate 1 is planar metal copper sheet.Planar metal copper sheet relative to
For traditional groove type package support, structure is more simple, is more easier to process and encapsulate, and is conducive to the preparation for improving product
Efficiency, and the good heat dissipation effect of planar metal copper sheet, electrical conductivity are high.In addition, the carrier that copper sheet is encapsulated frequently as LED,
The cost of raw material is lower, advantageously reduces the cost of manufacture of entire LED product.
In the present embodiment, intermediate insulating layer 5 is made of SMC material, thus not only guarantee metal substrate 1 positive and negative anodes it
Between electrical insulation capability it is more excellent, and guarantee that LED product has good mechanical performance, thermal stability and chemically-resistant anti-
Corruption.
In the present embodiment, optical element 3 is made of inorganic transparent material, effectively enhances the anti-UV of optical element 3
The ability of light.
In addition, in the present embodiment, a metal terminal is respectively welded as lead wire, with even in the both ends of metal substrate 1
External power supply is connect, provides electric energy for deep ultraviolet chip 2.
Corresponding, present embodiment discloses a kind of preparation method of deep ultraviolet LED packaging, the techniques of the preparation method
Process as shown in figure 3, itself the following steps are included:
S1: being divided into positive pole zone 11 and negative regions 12 for metal substrate 1, puts by the positive and negative anodes of adjacent metal substrate 1
It puts forward sequence opposite mode and array arrangement is carried out to multiple metal substrates 1；
In above-mentioned steps S1, each metal substrate 1 can be divided by positive pole zone 11 and cathode area by electroplating technology
Domain 12, it is easily operated, it is beneficial to improve the preparation efficiency.Certainly, metal substrate 1 also can be used traditional intermetallic composite coating mode into
Row segmentation.
S2: intermediate insulating layer 5 is filled between the positive pole zone 11 and negative regions 12 of each metal substrate 1.
S2 through the above steps is (logical by intermediate insulating layer 5 between the positive pole zone 11 and negative regions 12 of metal substrate 1
Often it is SMC material) filling, it is effectively guaranteed good insulation between the positive pole zone 11 of metal substrate 1 and negative regions 12
Performance.
S3: installing fixed deep ultraviolet chip 2 in the upper surface of each metal substrate 1, and make each deep ultraviolet chip 2 with it is corresponding
The positive pole zone 11 of metal substrate 1, negative regions 12 are electrically connected.
S4: selected optical component 3 first makes the first metal eutectic bonded layer 6 in the upper surface of each metal substrate 1, then
Optical element 3 is fixed on metal substrate 1 by the first metal eutectic bonded layer 6 in a manner of eutectic bonding, and makes each deep ultraviolet
Chip 2 is fully wrapped around by optical element 3.
S5: single LED device, test, packaging are cut into.
Wherein, upon step s 2, before step S3, intermediate insulating layer 5 upper surface covering production SiO2Insulating layer 4
(SiO2Insulating layer 4 can be fabricated to a thin layer), specifically, SiO2Insulating layer 4 is deposited on intermediate insulation by vapor deposition method
The upper surface of layer 5.Therefore, the upper surface growth of intermediate insulating layer 5 has the SiO of a thin shape2Insulating layer 4, significantly reduces
Between insulating layer 5 (usually SMC material) shortwave effect under aging speed, improve the reliability and service life of product.
In addition, gas-phase deposition comparative maturity, easily operated, be conducive to the preparation efficiency for improving LED product.
Wherein, in step s3, the second metal eutectic bonded layer 7 first is made in the upper surface of each metal substrate 1, then respectively
Deep ultraviolet chip 2 is mounted on metal substrate 1 by the second metal eutectic bonded layer 7 in a manner of eutectic bonding.In addition, can
Vertical chip is made in a manner of sinking to the bottom using figure, to improve light extraction efficiency.
Specifically, deep ultraviolet chip 2 is vertical chip, the second metal eutectic bonded layer 7 is only located at the cathode of metal substrate 1
On region 12；The cathode that deep ultraviolet chip 2 (specially vertical chip) passes through the second eutectic metal bonding layer 7 and metal substrate 1
Region 12 is electrically connected, and deep ultraviolet chip 2 (specially vertical chip) is electrically connected by gold thread 8 and the positive pole zone 11 of metal substrate 1
It connects.
In other words, pass through metal between deep ultraviolet chip 2 (specially vertical chip) and the negative regions 12 of metal substrate 1
Eutectic bonding technique realizes electrical connection, specifically there is following manner:
(1) Au-Sn eutectic: Au-Sn point scaling powder, about 310 DEG C of reflow solderings；
(2) Au-Au eutectic: heat ultrasound eutectic bonding；
(3) Sn-Ag-Cu tin cream reflow soldering (about 260 DEG C).
I.e.: in the present embodiment, the negative regions 12 of deep ultraviolet chip 2 (specially vertical chip) and metal substrate 1 it
Between no longer use traditional gold thread or alloy wire electric connection mode, not only reduce packaging cost, and improve product
Reliability.
In the present invention, deep ultraviolet chip 2 and metal substrate 1 are attached fixation in a manner of eutectic bonding, relative to
For traditional bonding way, connection structure is stronger, to effectively improve the reliability and service life of product.
Wherein, in step s 4, before optical element 3 is combined with metal substrate 1, in advance using wet corrosion technique to light
The outer surface for learning element 3 is roughened, to form the roughening microstructured layers 31 for being easier to out light.Wet corrosion technique is mature, easy
Row, preparation efficiency are high.
Embodiment 2
Present embodiment discloses another deep ultraviolet LED packagings, and described in embodiment 1 dark purple in structure
The difference of outer LED packaging is:
As shown in Fig. 2, deep ultraviolet chip 2 is flip-chip, the positive pole zone 11 of metal substrate 1 and negative regions 12 are all provided with
There is the second metal eutectic bonded layer 7, deep ultraviolet chip 2 (specially flip-chip) passes through the second metal eutectic bonded layer 7 and gold
Belong to the positive pole zone 11 of substrate 1, negative regions 12 are electrically connected.
For the preparation method of deep ultraviolet LED packaging, the present embodiment and the difference of embodiment 1 are:
In step s 4, deep ultraviolet chip 2 selects flip-chip, the positive pole zone 11 of metal substrate 1 and negative regions 12
Make the second metal eutectic bonded layer 7；Deep ultraviolet chip 2 (specially flip-chip) passes through the second metal eutectic bonded layer 7
It is electrically connected with the positive pole zone 11 of metal substrate 1, negative regions 12.
In other words, the positive pole zone 11 of deep ultraviolet chip 2 (specially flip-chip) and metal substrate 1, negative regions 12
Electrical connection is realized by metal eutectic bonding technology, specifically there is following manner:
(1) Au-Sn eutectic: Au-Sn point scaling powder, about 310 DEG C of reflow solderings；
(2) Au-Au eutectic: heat ultrasound eutectic bonding；
(3) Sn-Ag-Cu tin cream reflow soldering (about 260 DEG C).
I.e.: in the present embodiment, the positive pole zone 11 of deep ultraviolet chip 2 (specially flip-chip) and metal substrate 1, negative
The electric connection mode of traditional gold thread or alloy wire, not only easy to operate, packaging cost are no longer used between polar region domain 12
It is minimized, and the connection structure between deep ultraviolet chip 2 and metal substrate 1 is more secured, the reliability of product is higher.
The other structures form and preparation method of deep ultraviolet LED packaging described in the present embodiment, it is complete with embodiment 1
Identical, details are not described herein.
A kind of other contents of deep ultraviolet LED packaging of the present invention and preparation method thereof are referring to the prior art.
The above described is only a preferred embodiment of the present invention, limitation in any form not is done to the present invention, therefore
All contents without departing from technical solution of the present invention, it is made to the above embodiment according to the technical essence of the invention any simply to repair
Change, equivalent variations and modification, all of which are still within the scope of the technical scheme of the invention.
Claims (8)
1. deep ultraviolet LED packaging, it is characterised in that:
It include metal substrate, deep ultraviolet chip, optical element, intermediate insulating layer and the first metal eutectic bonded layer；
The positive pole zone of the metal substrate and negative regions are separated by the intermediate insulating layer；
The deep ultraviolet chip is fixed on the metal substrate, and the positive polar region of the deep ultraviolet chip and the metal substrate
Domain, negative regions electrical connection；
The optical element is fixed on the metal substrate by the first metal eutectic bonded layer, and the optical element will
The deep ultraviolet chip is fully wrapped around；
The metal substrate is planar metal substrate；
The outer surface of the optical element is in multi-step formula structure, and the outer surface of the optical element is equipped with roughening micro-structure
Layer；
It further include having SiO2Insulating layer；The SiO2Insulating layer is covered in the inner surface of the intermediate insulating layer.
2. a kind of deep ultraviolet LED packaging according to claim 1, it is characterised in that: further include having the second metal total
Brilliant bonded layer；The deep ultraviolet chip is fixed on the metal substrate by the second metal eutectic bonded layer.
3. a kind of deep ultraviolet LED packaging according to claim 2, it is characterised in that: the deep ultraviolet chip is vertical
Straight chip；The second metal eutectic bonded layer is located on the negative regions of the metal substrate；The vertical chip passes through institute
The second eutectic metal bonding layer is stated to be electrically connected with the negative regions of the metal substrate, the vertical chip by gold thread with it is described
The positive pole zone of metal substrate is electrically connected.
4. a kind of deep ultraviolet LED packaging according to claim 2, it is characterised in that: the deep ultraviolet chip is to fall
Cartridge chip；The positive pole zone of the metal substrate and negative regions are equipped with the second metal eutectic bonded layer, the upside-down mounting
Chip is electrically connected by the second metal eutectic bonded layer with the positive pole zone of the metal substrate, negative regions.
5. a kind of deep ultraviolet LED packaging according to any one of claims 1 to 4, it is characterised in that: the Metal Substrate
Plate is planar metal copper sheet；The intermediate insulating layer is made of SMC material；The optical element is by inorganic transparent material system
At.
6. a kind of preparation method of such as described in any item deep ultraviolet LED packagings of Claims 1 to 4, which is characterized in that packet
Include following steps:
S1: being divided into positive pole zone and negative regions for metal substrate, puts sequence by the positive and negative anodes of the adjacent metal substrate
Opposite mode carries out array arrangement to multiple metal substrates；
S2: intermediate insulating layer is filled between the positive pole zone and negative regions of each metal substrate；
S3: installing fixed deep ultraviolet chip in the upper surface of each metal substrate, and make each deep ultraviolet chip with it is corresponding
The metal substrate positive pole zone, negative regions electrical connection；
S4: selected optical component first makes the first metal eutectic bonded layer in the upper surface of each metal substrate, then optics
Element is fixed on the metal substrate by the first metal eutectic bonded layer in a manner of eutectic bonding, and makes each depth
Ultraviolet chip is fully wrapped around by the optical element；
S5: single LED device, test, packaging are cut into.
7. the preparation method of deep ultraviolet LED packaging according to claim 6, it is characterised in that: in the step S2
Later, before the step S3, in the upper surface of intermediate insulating layer covering production SiO2Insulating layer.
8. the preparation method of deep ultraviolet LED packaging according to claim 6 or 7, it is characterised in that: in the step
In S3, the second metal eutectic bonded layer first is made in the upper surface of each metal substrate, then each deep ultraviolet chip is logical
The second metal eutectic bonded layer is crossed to be mounted in a manner of eutectic bonding on the metal substrate.
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| CN108134007B (en) * | 2017-11-08 | 2019-05-10 | 厦门市三安光电科技有限公司 | A kind of ultraviolet LED encapsulating structure |
| US11626547B2 (en) | 2017-11-08 | 2023-04-11 | Xiamen Sanan Optoelectronics Technology, Co., Ltd. | UV LED device |
| CN109786535B (en) * | 2018-12-17 | 2020-06-26 | 旭宇光电（深圳）股份有限公司 | Deep ultraviolet light-emitting device |
| CN112054111B (en) * | 2020-09-10 | 2022-10-25 | 无锡商业职业技术学院 | Light-emitting element packaging structure of ultraviolet sterilization lamp and driving method thereof |
| WO2022151115A1 (en) * | 2021-01-14 | 2022-07-21 | 泉州三安半导体科技有限公司 | Led device and manufacturing method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9263658B2 (en) * | 2012-03-05 | 2016-02-16 | Seoul Viosys Co., Ltd. | Light-emitting device and method of manufacturing the same |
| CN105845814A (en) * | 2016-05-04 | 2016-08-10 | 华中科技大学 | Ultraviolet LED packaging structure and manufacturing method thereof |
| CN206639811U (en) * | 2016-12-27 | 2017-11-14 | 广东晶科电子股份有限公司 | A kind of deep ultraviolet LED packagings |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105845814A (en) * | 2016-05-04 | 2016-08-10 | 华中科技大学 | Ultraviolet LED packaging structure and manufacturing method thereof |
| CN206639811U (en) * | 2016-12-27 | 2017-11-14 | 广东晶科电子股份有限公司 | A kind of deep ultraviolet LED packagings |
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