CN112652696B

CN112652696B - LED light-emitting device and manufacturing method thereof

Info

Publication number: CN112652696B
Application number: CN202110046836.5A
Authority: CN
Inventors: 林秋霞; 黄森鹏; 李达诚; 白文华; 余长治; 徐宸科
Original assignee: Quanzhou Sanan Semiconductor Technology Co Ltd
Current assignee: Quanzhou Sanan Semiconductor Technology Co Ltd
Priority date: 2021-01-14
Filing date: 2021-01-14
Publication date: 2022-12-20
Anticipated expiration: 2041-01-14
Also published as: CN112652696A

Abstract

The invention provides an LED light-emitting device and a manufacturing method thereof. The substrate is further provided with a strip structure surrounding the functional region at the periphery of the functional region and spaced apart from the functional region, the strip structure being higher than the surface of the substrate, and an adhesive material being located above the strip structure. The metal strip has a certain height, so that the distance between the light transmitting unit and the substrate can be increased, and the distance between the inner wall of the light transmitting unit and the LED chip can be increased. In addition, the height of the strip structure is adjustable, and the strip structure can be adjusted according to the thickness of the LED chip and the depth of the inner cavity of the light transmitting area of the light transmitting unit. The LED chip can be ensured not to be contacted with the light transmission unit or extruded by the light transmission unit, and the LED chip is ensured to realize the optimal light emitting effect.

Description

LED light-emitting device and manufacturing method thereof

Technical Field

The invention relates to the field of semiconductor devices, in particular to an LED light-emitting device and a manufacturing method thereof.

Background

LED chips are rapidly developed for their excellent performance. The ultraviolet light LED, especially the deep ultraviolet light LED, has great application value, especially in the aspect of sterilization, and has attracted people's high attention, becoming a new research hotspot.

With the demand of the deep ultraviolet LED becoming larger and larger, the structure of the deep ultraviolet LED becomes more and more diversified. At present, a packaging form of a substrate and quartz glass is generally adopted. The quartz glass is bonded to the substrate by an adhesive, and then such a package form has many problems. For example, the substrate and the quartz glass are different in material, which generally results in poor adhesion of the adhesive and cannot ensure the airtightness of the product; secondly, the amount of the binder cannot be accurately controlled in the laminating process, the binder is low in amount, the binder is easy to lack around the product, the binder cannot fully fill the gap between the substrate and the quartz glass, and the problem of air tightness of the product is caused; the use amount of the binder is large, or the binder enters a functional area of a product to influence the luminous effect of the LED; since the quartz glass material itself is hard and brittle, the glass is likely to be chipped and damaged during the production operation, which also results in a decrease in the airtightness and reliability of the product. On the other hand, because the ultraviolet LED chip has a large thickness and the depth of the cavity of the light transmission unit formed by the quartz glass is limited, the depth of the cavity is smaller than the thickness of the chip, and at the moment, the covering quartz glass can cause overstock and damage to the LED chip, so that the LED chip can not work normally, and the reliability of a finished product is reduced.

Based on many problems faced by LED packages, especially UV LED packages, there is an urgent need for a solution to the light-emitting device light-emitting efficiency and to improve the reliability of the light-emitting device.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, it is an object of the present invention to provide an LED light emitting device and a method of manufacturing the same, in which an adhesive material layer is formed between a substrate and quartz glass, the adhesive material layer including a first portion located above a metal strip outside a functional region on a first surface of the substrate, and a second portion located on at least a portion of the substrate outside the metal strip, the adhesive material layer forming a continuous structure. The bonding material layer fully fills the gap between the substrate and the quartz glass, can improve the air tightness of the product, and simultaneously protects the quartz glass from being damaged or damaged. The side walls of the light-emitting device provided by the invention are flush on the whole, so that the product can be better placed in the braid vibrating disc, and the packaging yield can be better improved.

To achieve the above and other related objects, the present invention provides an LED lighting device, comprising:

the substrate is provided with a first surface and a second surface which are oppositely arranged, a functional area and a strip structure are formed on the first surface of the substrate, the strip structure is positioned at the periphery of the functional area and is mutually spaced from the functional area, and the strip structure is higher than the first surface of the substrate;

an LED chip fixed to the functional region of the first surface of the substrate;

a light transmitting unit disposed over the first surface of the substrate and covering the LED chip;

and the bonding material layer is used for connecting the substrate and the light transmitting unit and is positioned above the strip structure.

Optionally, the substrate is a planar substrate, a metal plating layer higher than the first surface is disposed on the first surface of the substrate, and the metal plating layer forms the functional region and the stripe structure.

Optionally, in the light emitting direction of the LED chip, the thickness of the adhesive material layer is 35 μm to 150 μm.

Optionally, the adhesive material layer is further formed on at least a part of the substrate outside the metal strip, the adhesive material layer above the strip structure is a first part, and the adhesive material layer on at least a part of the substrate outside the metal strip is a second part.

Optionally, in the light emitting direction of the LED chip, the thickness of the first portion of the adhesive material layer is 35 μm to 50 μm, and the thickness of the second portion is 50 μm to 150 μm.

Optionally, the light transmission unit is a lens structure including a convex lens and a mount formed around the convex lens, wherein,

a cavity is formed between the mounting seat and the convex lens, and the quartz glass plate is connected to the substrate through the mounting seat;

the LED chip is located in the cavity.

Optionally, the thickness of the LED chip is between 200 μm and 750 μm.

Optionally, the depth of the cavity of the light-transmitting unit is 100 μm to 900 μm, and the distance between the inner wall of the inner cavity and the top of the LED chip is 10 μm to 100 μm.

Optionally, the height of the stripe structure is between 35 μm and 100 μm.

Optionally, the convex lens is a hemispherical convex lens, and a spherical center of the convex lens is located between the upper surface of the LED chip and the inner surface of the convex lens.

Optionally, the convex lens is a semi-ellipsoidal convex lens in the long axis direction, and the spherical center of the convex lens is located between the upper surface of the LED chip and the inner surface of the convex lens.

Optionally, a vertical distance between a highest point and a lowest surface of the lens structure is between 3.00 and 3.50mm, a height of the mount of the lens structure is between 0.3 and 0.7mm, and a maximum width of the convex lens is between 3.00 and 3.50mm.

Optionally, the light-transmitting unit is quartz glass.

Optionally, the adhesive material layer includes a first adhesive layer located above the stripe structure and a second adhesive layer located on a sidewall of the light transmitting unit.

Optionally, the adhesive material layer includes a first adhesive layer located above the stripe structure, a second adhesive layer located on the side wall of the light transmitting unit, and a third adhesive layer located on at least part of the side wall of the substrate.

The invention also provides a manufacturing method of the LED light-emitting device, which comprises the following steps:

providing a substrate, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged, a functional area and a strip structure are formed on the first surface, the strip structure is positioned at the periphery of the functional area and is mutually spaced from the functional area, and a cutting area is formed between the adjacent strip structures;

providing an LED chip and fixing the LED chip on the functional region on the first surface of the substrate;

covering a light-transmitting plate on the substrate, connecting the light-transmitting plate to the substrate through a bonding material layer on the substrate outside the functional area, wherein the light-transmitting plate covers the LED chip;

and cutting the substrate in alignment with the cutting area of the substrate until the substrate is cut through to form the light-emitting device.

Optionally, the substrate is a planar substrate, a metal plating layer higher than the first surface is disposed on the first surface of the substrate, the metal plating layer forms the functional region and the stripe structures, and a groove is formed between adjacent stripe structures.

Optionally, the step of covering the light-transmitting plate on the substrate further comprises the steps of:

providing quartz glass comprising a plurality of light transmitting units, wherein each light transmitting unit comprises a mounting seat positioned on the periphery of the light transmitting unit and a light transmitting area positioned in the middle of the mounting seat;

filling a bonding material in the groove;

attaching the quartz glass to the substrate, so that part of the bonding material is formed above the strip structure to form a first part of the bonding material layer, the bonding material layer remained in the groove forms a second part, the mounting seat of each light-transmitting unit is connected to the substrate through the bonding material, and the light-transmitting area of each light-transmitting unit of the quartz glass corresponds to the LED chips one to one.

Optionally, the step of covering the substrate with a light-transmitting plate further comprises:

providing a plurality of independent light-transmitting units formed by quartz glass, wherein each light-transmitting unit comprises a mounting seat positioned at the periphery of the light-transmitting unit and a light-transmitting area positioned in the middle of the mounting seat;

filling a bonding material in the groove;

attaching a plurality of light-transmitting units to the substrate such that a portion of the bonding material is formed over the strip structure to form a first portion of the bonding material layer, the bonding material layer remaining in the groove forms a second portion, the mount of each light-transmitting unit is connected to the substrate through the bonding material, and the light-transmitting regions of each light-transmitting unit correspond one-to-one to the LED chips.

Optionally, the light-transmitting unit is formed in a lens structure, wherein the light-transmitting region is a convex lens, a cavity is formed between the mounting seat and the convex lens, the quartz glass plate is connected to the substrate through the mounting seat, and the LED chip is located in the cavity.

Optionally, the thickness of the adhesive material layer is between 35 μm and 150 μm.

Optionally, the thickness of the first portion is between 35 μm and 50 μm and the thickness of the second portion is between 50 μm and 150 μm.

Optionally, the height of the stripe structure is between 35 μm and 100 μm.

Optionally, before the cutting, the method further comprises:

performing first cutting to cut the light-transmitting plate so as to form a first groove above the cutting area;

a second bonding layer of a bonding material layer is formed in the first trench.

Optionally, before the cutting, the method further comprises:

performing a first cutting to cut the light-transmitting plate and at least part of the substrate so as to form a first groove above the cutting area and form a second groove in the substrate, wherein the second groove is communicated with the first groove;

forming a third bonding layer of the bonding material layer in the second trench;

forming a second bonding layer of the bonding material layer in the first trench.

As described above, the LED light emitting device and the method for manufacturing the same according to the present invention have at least the following advantageous effects:

the LED light-emitting device of the present invention includes: the LED light source comprises a substrate, an LED chip arranged in a functional region of the substrate, a light transmitting unit covering the substrate and the LED chip, and a bonding material layer connecting the substrate and the light transmitting unit. The above-mentioned substrate is further provided with a strip structure located at the periphery of, preferably surrounding and spaced from the functional area, the strip structure being higher than the surface of the substrate, over which strip structure an adhesive material is located. The metal strip has a certain height, so that the distance between the light transmitting unit and the substrate can be increased, and the distance between the inner wall of the light transmitting unit and the LED chip can be increased. The LED chip is ensured not to be contacted with the light transmission unit or extruded by the light transmission unit, so that the performance of the LED chip is ensured. The height of the strip structure is adjustable, the strip structure can be adjusted according to the thickness of the LED chip and the depth of the inner cavity of the light transmitting area of the light transmitting unit, the LED chip and the inner cavity of the light transmitting unit are guaranteed to keep the optimal distance, and the LED chip is guaranteed to achieve the optimal light emitting effect.

The side walls of the LED light-emitting device are flush on the whole, so that the product can be better placed in the braid vibration disc, and the packaging yield can be better improved. The first portion of the adhesive layer uniformly and completely fills the space between the metal strip and the lens unit without air bubbles or gaps, which can significantly increase the hermeticity of the device. In addition, the second portion formed on at least a part of the substrate outside the metal strip can further block moisture and the like from entering the inside of the device, and particularly when the second portion fills up the gap between the substrate outside the metal strip and the light-transmitting unit, the airtightness of the device can be further improved.

In an LED lighting device according to another embodiment of the present invention, the adhesive material layer between the substrate and the light transmitting unit includes: the LED light-emitting device comprises a first bonding layer and a second bonding layer, wherein the first bonding layer is positioned above the substrate on the outer side of the functional region on the first surface of the substrate, the second bonding layer is positioned on the side wall of the light-transmitting unit, and the bonding material layers form a continuous structure in the LED light-emitting device. The bonding material is integrally formed into a structure similar to an L shape, and the bonding material with the structure can fully bond the substrate and the light-transmitting unit, so that the bonding force between the substrate and the light-transmitting unit is enhanced, and the reliability of the product is improved. Meanwhile, the bonding material layer fully fills the gap between the substrate and the light transmission unit and is also formed on the side wall of the light transmission unit, so that the sealing property between the substrate and the light transmission unit is effectively improved, and the air tightness and the reliability of the product are enhanced.

In the light-emitting device of the present invention, the adhesive material layer further includes a third adhesive layer formed on at least a part of the side wall of the substrate, for example, a step is formed on the side wall of the substrate, and the third adhesive layer is formed on the surface and the side wall of the step. The bonding material layer comprising the third bonding layer forms a continuous structure resembling a "T" or "Z" shape. The structure forms a coating structure between the substrate and the light transmission unit and around the substrate and the light transmission unit, so that the air tightness and the reliability of the product can be further improved.

Further, the adhesive material layer may further include a fourth adhesive layer formed on a portion of an upper surface of the light-transmitting unit, and specifically, the fourth adhesive layer is formed on at least a portion of an upper surface of the mounting seat of the light-transmitting unit, so that an adhesive area of the adhesive material is further increased, a bonding force between the light-transmitting unit and the substrate is increased, and airtightness and reliability of the product are further enhanced.

The above-mentioned layer of bonding material preferably has one or more of the following characteristics: the adhesive has good adhesion, certain fluidity and certain reflection effect on light emitted by the LED chip, for example, silica gel, white glue, fluororesin and the like can be selected, so that the air tightness of the product can be improved, and the light emitting effect of the product can also be improved.

The method for manufacturing the light-emitting device of the present invention may be a method in which a whole quartz glass plate including a plurality of light-transmitting units is covered on a whole substrate, or a method in which a plurality of independent light-transmitting units formed of quartz glass are bonded to a whole substrate. Firstly, the whole quartz glass plate or the independent light-transmitting unit and the substrate are positioned by corresponding positioning parts on respective jigs, so that the light-transmitting area of the light-transmitting unit is ensured to be superposed with the center of an LED chip on the substrate, the process can effectively improve the deviation of the quartz glass plate or the light-transmitting unit, and the deviation of the central light-emitting angle of the LED chip is avoided; the mounting seat of the light-transmitting unit is aligned with the area outside the functional area coated with the first bonding layer on the substrate, and the quartz glass is contacted with the first bonding layer on the substrate and extruded to realize the tight fit of the quartz glass and the first bonding layer in a vacuum-pumping laminating device. Furthermore, first grooves are formed among the light transmitting units, bonding materials are filled in the first grooves to fill the first grooves to form second bonding layers, and the second bonding layers are baked, cured and cut along the third bonding layers to obtain the light-emitting device, so that the light-emitting device comprising the bonding material layers with the L-shaped structures is formed. The method can ensure the air tightness and reliability of the light-emitting device, and the deviation of the quartz glass can be effectively improved in the whole process. The manufacturing method cuts part of the substrate along the first groove while forming the first groove, forms a second groove on the second substrate, and forms the third bonding layer in the second groove. Therefore, the bonding material layer similar to the T shape is formed, and the air tightness and the reliability of the device are further improved.

In the present invention, the substrate may be a planar substrate or a holder substrate with a bowl, and the light-transmitting unit may be a lens structure or a flat structure. The manufacturing method of the light-emitting device has the advantages of variable modes, strong applicability, capability of manufacturing light-emitting devices in various forms and capability of ensuring good air tightness and reliability of devices.

Drawings

Fig. 1a is a schematic view illustrating an LED lighting device according to an embodiment of the present invention.

Fig. 1b is a flow chart illustrating a method for manufacturing the LED lighting device shown in fig. 1 a.

FIG. 1c is a schematic diagram of a substrate provided in the method of FIG. 1 b.

FIG. 1d is a schematic top view of the substrate shown in FIG. 1 c.

FIG. 1e is a schematic diagram of the structure of FIG. 1d for coating the substrate with the adhesive material.

Fig. 1f is a schematic structural view of the substrate shown in fig. 1e placed in the first fixture.

Fig. 1g shows a schematic view of quartz glass being placed in a second jig.

Fig. 1h shows a schematic view of placing the second fixture on the first fixture.

FIG. 1i is a schematic view showing the attachment of quartz glass to a substrate.

Fig. 1j shows a schematic view of a structure in which an adhesive material is formed on a metal strip.

Fig. 1k shows a schematic structure of the substrate covered with quartz glass.

Fig. 2a is a schematic view illustrating an LED lighting device according to a second embodiment of the present invention.

Fig. 2b is a schematic view illustrating an LED lighting device according to an alternative embodiment of the second embodiment of the present invention.

Fig. 2c is a schematic view illustrating an LED lighting device according to an alternative embodiment of the second embodiment of the present invention.

Fig. 3 is a schematic diagram showing the light-emitting angle of the LED lighting device shown in fig. 2a and 2 b.

Fig. 4a shows a schematic diagram of an LED lighting device provided for an alternative embodiment of the first and second embodiments.

Fig. 4b is a schematic diagram showing the light-emitting angle of the LED lighting device shown in fig. 4 a.

Fig. 5 is a schematic flow chart illustrating a method for manufacturing an LED lighting device according to a second embodiment of the present invention.

Fig. 6a is a schematic structural view after the substrate is provided and the LED chip is fixed on the substrate as described in fig. 5.

Fig. 6b and 6c are schematic diagrams showing different arrangements of LED chips on the substrate.

Fig. 7a is a schematic structural view illustrating a first adhesive layer formed on the substrate shown in fig. 6 a.

Fig. 7b is a schematic diagram illustrating a structure of a first adhesive layer formed on the substrate shown in fig. 6a according to another alternative embodiment.

Fig. 8a is a schematic structural diagram of the substrate shown in fig. 7a placed in the first fixture.

Fig. 8b shows a schematic view of quartz glass being placed in a second jig.

Fig. 8c is a schematic view showing the second jig being placed on the first jig.

Fig. 8d shows a schematic view of bonding quartz glass to a substrate.

Fig. 8e is a schematic structural view after the substrate is covered with quartz glass.

Fig. 9 is a schematic structural view showing the formation of first trenches between adjacent light-transmitting units of the quartz glass shown in fig. 8 e.

Fig. 10 is a schematic structural view illustrating formation of a second adhesive layer in the first trench shown in fig. 9.

Fig. 11a is a schematic structural diagram illustrating the formation of a first trench in another alternative embodiment.

Fig. 11b is a schematic structural diagram of the first fixture for fixing the substrate shown in fig. 11 a.

Fig. 11c is a schematic structural view of a second fixture for fixing the plurality of light-transmitting units shown in fig. 11 a.

Fig. 12a is a schematic structural diagram of an LED lighting device according to a third embodiment of the present invention.

Fig. 12b is a schematic structural diagram of an LED lighting device in an alternative embodiment of the third embodiment.

Fig. 12c is a schematic structural diagram of an LED lighting device in another alternative embodiment of the third embodiment.

Fig. 13 is a schematic structural view illustrating the formation of the second trench in the method for manufacturing an LED light emitting device according to the third embodiment.

FIG. 14 is a schematic diagram illustrating the formation of second and third structures in the structure shown in FIG. 13.

Fig. 15 is a schematic structural view illustrating formation of a second trench in another alternative embodiment of the third embodiment.

Fig. 16a is a schematic structural diagram of an LED lighting device according to a fourth embodiment of the present invention.

Fig. 16b is a schematic structural view illustrating an LED lighting device according to a fifth embodiment of the present invention.

Fig. 17a is a schematic structural diagram illustrating an LED lighting device according to a sixth embodiment of the present invention.

Fig. 17b is a schematic structural diagram illustrating an LED lighting device according to a seventh embodiment of the present invention.

Fig. 18a is a schematic structural diagram of an LED lighting device according to an eighth embodiment of the present invention.

Fig. 18b is a schematic structural diagram of an LED lighting device according to an alternative embodiment of the eighth embodiment of the present invention.

Fig. 19 is a schematic structural view showing a substrate provided in a method of manufacturing an LED light-emitting device according to an eighth embodiment and an LED chip fixed on the substrate.

Fig. 20 is a schematic structural view illustrating a first adhesive layer formed on the substrate shown in fig. 19.

Fig. 21 is a schematic view showing a structure in which a quartz glass is coated on the substrate shown in fig. 20.

Fig. 22 is a schematic structural view illustrating formation of a first trench in the structure shown in fig. 21.

Fig. 23 is a schematic view showing a structure in which a second adhesive layer is formed in the structure shown in fig. 22.

Fig. 24 is a schematic structural diagram illustrating formation of a first trench in an alternative embodiment to the eighth embodiment.

Fig. 25a is a schematic structural diagram illustrating an LED lighting device according to a ninth embodiment of the present invention.

Fig. 25b is a schematic structural diagram of an LED lighting device according to an alternative embodiment of the ninth embodiment.

Fig. 26 is a schematic structural view illustrating formation of a second groove in the method for manufacturing an LED light-emitting device according to the ninth embodiment.

Fig. 27 is a schematic view showing a structure in which second and third adhesive layers are formed in the structure shown in fig. 26.

Fig. 28 is a schematic structural diagram illustrating formation of a second trench in an alternative embodiment to the ninth embodiment.

Fig. 29 is a graph showing a comparison of He gas leakage in the LED lighting device shown in fig. 1a, 2b and 12 a.

Fig. 30 is a schematic structural view of an LED lighting device according to a tenth embodiment of the present invention.

Fig. 31 is a schematic structural view illustrating an LED lighting device according to an eleventh embodiment of the present invention.

Fig. 32 is a schematic structural view illustrating an LED lighting device according to a twelfth embodiment of the present invention.

Fig. 33 is a schematic structural view illustrating an LED lighting device according to a thirteenth embodiment of the present invention.

List of reference numerals

100-1 LED Lighting apparatus 200-1, 200-1' LED Lighting apparatus

101. Substrate 200-2, 200-2' LED light emitting device

1011. Functional area 200-3 LED light-emitting device

1012. Non-functional area 200-4, 200-4' LED light-emitting device

1012-1 Metal strap 201 substrate

1013. Electrode pad 2011 functional region

1014. Non-functional region of second trench 2012

1015. First tool 2013 electrode pad

1016. Positioning spring 2014 second groove

1017. Peripheral region of step 2018' nonfunctional region on sidewall of substrate

1018' peripheral region 2018 cut region of nonfunctional area

1018. Cutting area 2015 first tool

102. Light transmission unit 2016 positioning spring

1020. Step on side wall of quartz glass 2017 substrate

1021. Mount 202 light transmission unit

1022. Light-transmitting region 2020 quartz glass

1023. First groove 2021 mount

1024. Second tool 2022 light-transmitting area

1025. Positioning hole 2023 first groove

103 Second jig for LED chip 2024

104. Cavity 2025 locating hole formed by lens structure

1051. First adhesive layer 203 LED chip

1052. Second adhesive layer 204 lens structure forming cavity

1053. Third bonding layer 2051 first bonding layer

1054. Fourth bonding layer 2052 second bonding layer

106. Groove 2053 third adhesive layer

100-2, 100-2',100-2 "LED light 2054 fourth adhesive layer

100-3 LED illuminator 206 groove

100-4 LED illuminator 207 step

200-5 LED light emitting device 200-7 LED light emitting device

200-6 LED light emitting device 200-8 LED light emitting device

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.

It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity, position relationship and proportion of the components in actual implementation can be changed freely on the premise of implementing the technical solution of the present invention, and the layout form of the components may be more complicated.

Example one

As shown in fig. 1a, the LED light emitting device 100-1 of the present embodiment includes a substrate 101, an LED chip 103 disposed on the substrate, a light transmitting unit 102 covering the LED chip and connected to the substrate, and an adhesive layer 1051 connecting the substrate 101 and the light transmitting unit 102.

In this embodiment, the substrate 101 may be any suitable substrate such as a ceramic substrate or a printed circuit board. This embodiment will be described with reference to a planar ceramic substrate as an example. The substrate 101 includes a first surface and a second surface oppositely disposed, as shown in fig. 1a, the first surface of the substrate 101 is provided with a functional region 1011, and the second surface is provided with an electrode pad 1013 connected to the functional region 1011. The functional region 1011 is formed as a die attach region for attaching the LED chip, and the LED chip 103 is disposed on the functional region 1011, and may be connected by gold wire or directly soldered to the functional region, for example. In an alternative embodiment, the functional region is formed of a metal plating layer formed on the first surface of the substrate 101, the metal plating layer is formed in the functional region to connect positive and negative electrode regions of the electrodes of the LED chip, respectively, and the electrode pads 1013 lead out the electrodes of the LED chip disposed in the functional region. The light-transmitting unit 102 includes a mounting seat 1021 and a light-transmitting region 1022, a cavity 104 is formed between the mounting seat and the light-transmitting region, and the led chip 103 is located in the cavity 104. The light transmitting unit is connected to the substrate 101 through an adhesive material layer 1051 over the substrate outside the functional region. In the present invention, for convenience of description, the outer region of the non-functional region is defined as a non-functional region 1012, and this definition is only for explaining the present invention and is not to be construed as limiting the present invention.

The LED chip 103 may be any type of LED chip, for example, an ultraviolet or deep ultraviolet LED chip with a wavelength less than 400nm, especially a wavelength between 220nm and 385nm, and in this embodiment, an ultraviolet LED chip with a wavelength between 220nm and 385nm is taken as an example. The thickness of the UV LED chip is 250-500 μm, preferably about 430 μm, for example 450 μm. Although not shown in detail, it is understood that the LED chip 103 may include a substrate, a semiconductor layer formed on a surface of the substrate, the semiconductor layer including a first semiconductor layer, an active layer and a second semiconductor layer which may be sequentially formed on the surface of the substrate, the LED chip 103 further including an electrode structure connected to the first and second semiconductor layers, respectively, the electrode structure of the LED chip 103 being connected to the functional region 1011 of the substrate, for example, by soldering, eutectic bonding, etc., thereby achieving the fixation of the LED chip 103. The electrode structure of the LED chip is LED out through the electrode pad 1013 on the back surface of the substrate.

In the ultraviolet LED chip, the substrate can be a sapphire substrate, the first semiconductor layer can be an N-type A1GaN layer, and an AlN buffer layer and an A1N/A1GaN superlattice layer can be formed between the N-type A1GaN layer and the sapphire substrate to reduce the lattice mismatch rate of the N-type A1GaN layer and the sapphire substrate. The active layer is an AlGaN multi-quantum well layer, and the AlGaN multi-quantum well layer is arranged on one side, far away from the substrate, of the N-type AlGaN layer; the second semiconductor layer is a P-type A1GaN layer, and the P-type AlGaN layer is arranged on one side, away from the substrate, of the AlGaN quantum well layer.

Referring also to fig. 1a, the light transmitting unit 102 includes a mounting seat 1021 and a light transmitting area 1022, in this embodiment, the light transmitting unit 102 is a lens structure formed by quartz glass, the light transmitting area forms a convex lens, and the mounting seat is located below the convex lens. The mount is attached to the non-functional area 1012 of the substrate and the light transmissive area is over the LEDs. A cavity 104 is formed between the mount and the light-transmitting region, and the led chip 103 is located in the cavity 104, and the depth of the cavity is about 100 μm to 900 μm. Although not shown in the present embodiment, a reflective layer, an encapsulation adhesive containing phosphor, or other structures may be formed in the cavity 104. In order to improve the light emitting effect of the LED light emitting device, preferably, the center line of the LED chip coincides with the center line of the light transmitting region (convex lens) 1022.

Referring also to fig. 1a, the non-functional region 1012 of the substrate 101 is also formed with a metal plating layer, the metal plating layer of the non-functional region is formed as a metal strip 1012-1 surrounding the functional region, and the metal strip 1012-1 is spaced apart from the functional region. The metal plating layers of the metal strips forming the functional regions and the non-functional regions may be the same metal material or different metal materials. When the same metal material is used, the metal plating layers of the functional region and the non-functional region can be formed at the same time. The thickness of the metal plating layer is between 30 μm and 100 μm, preferably about 50 μm. Since the metal plating has the above-mentioned thickness, the substrate 101 forms a groove 106 between adjacent metal strips (see fig. 1 d). As shown in fig. 1a, the adhesive layer 1051 comprises a first portion 1051-1 located over the metal strip of the non-functional area and a second portion 1051-2 located on at least a portion of the substrate outside of the metal strip 1012-1. Fig. 1a shows the LED lighting device with the second portion 1051-2 of the adhesive layer formed on a portion of the substrate outside the metal strip 1012-1, it being understood that the second portion 1051-2 may be formed on the entire substrate outside the metal strip 1012-1 and fill the gap between the mount of the light transmissive unit and the substrate outside the metal strip.

Due to the metal strip, when the light-transmitting unit is adhered to the substrate through the adhesive material, the distance between the light-transmitting unit and the substrate is increased, and accordingly the distance between the inner wall of the inner cavity 104 of the light-transmitting unit and the top of the LED chip is increased, so that the LED chip can be prevented from being extruded by the light-transmitting unit, and the LED chip is protected from being damaged. In addition, the distance between the top of the LED chip and the inner wall of the inner cavity 104 of the light-transmitting unit can be adjusted by adjusting the height of the metal strip, so that the distance is smaller than 100 μm, preferably, the distance is larger than 10nm, and thus, the light-emitting effect of the LED chip is ensured on the premise that the LED chip is not squeezed.

In the present embodiment, the metal strip is taken as an example for description, and it can be understood that any material capable of increasing the distance between the light-transmitting unit and the substrate and not affecting the photoelectric performance of the LED chip can be used to form the strip structure. For example, the strip structure may be formed by depositing an insulating material such as silicon oxide or aluminum oxide.

The thickness of the adhesive layer 1051 is 35 μm to 150 μm in the light-emitting direction of the LED light-emitting device, i.e., in the direction indicated by the arrow O in fig. 1 a. Wherein the thickness of the first portion 1051-1 is between 35 μm and 50 μm, and the thickness of the second portion 1051-2 is between 50 μm and 150 μm.

The adhesive layer 1051 may be selected from, for example, silica gel, white gel, fluorine resin, and the like, and preferably has one or more of the following characteristics: the material has good adhesion, certain fluidity and certain reflection effect on light emitted by the LED chip, so that the air tightness of the product can be improved, and the service life of the product can be prolonged.

Still referring to fig. 1a, in the present embodiment, the light-transmitting unit 102 forms a lens structure, wherein the convex lens of the light-transmitting region 1022 is formed as a hemispherical convex lens. The spherical diameter of the hemispherical convex lens is between 2.00mm and 3.50mm, preferably 3.20mm, and the height of the whole light transmission unit is between 1.50mm and 2.30mm, preferably 2.10mm. With the convex lens, as shown in fig. 3, the light emitting angle of the LED light emitting device is about 60 °. The light-emitting angle of the LED lighting device can also be adjusted by adjusting the filling material in the cavity 104 between the mounting base and the light-transmitting region. For example, when there is no filling material around the LED chip, i.e. air or nitrogen gas is in the cavity 104, the light-emitting angle of the LED light-emitting device is between 55 ° and 80 °; if the periphery of the LED chip, i.e., the cavity 104, is filled with a reflective material such as an inorganic adhesive, the light-emitting angle of the LED light-emitting device 100-2 is between 80 ° and 120 °.

Referring to fig. 4a, in another alternative embodiment of the present embodiment, the light transmission unit is also formed as a lens structure, and includes a mounting seat 1021 and a light transmission region 1022, except that the light transmission region is formed as a semi-ellipsoid shape and is a semi-ellipsoid shape in the long axis direction. The height (i.e., the vertical distance between the highest and lowest surfaces of the lens structure) H1 of the light transmission unit having the semi-ellipsoidal light transmission region is about 3.00 to 3.50mm, the height H2 of the mount is 0.30 to 0.70mm, and the maximum width W of the convex lens is 2.00 to 3.50mm. As shown in fig. 4b, the light-emitting device having the light-transmitting unit of the semi-ellipsoidal light-transmitting region has an exit angle of about 35 °. The light exit angle of a light emitting device having a semi-ellipsoidal light transmitting unit can also be adjusted by adjusting the filling material in the cavity 104 between the mount and the light transmitting region. For example, when there is no filling material around the LED chip, i.e., air or nitrogen gas is in the cavity 104, the light-emitting angle of the light-emitting device is about 25 ° to 55 °; if the periphery of the LED chip, i.e. the cavity 104, is filled with a reflective material such as an inorganic glue, the light-emitting angle of the light-emitting device is between 55 ° and 75 °.

In practical application, any light-transmitting unit can be selected according to the requirement of the light-emitting angle. In this embodiment, the light-transmitting unit may be a quartz glass lens, or may be a plastic lens.

As shown in fig. 1a, the sidewall of the substrate of the light emitting device 100-1 of the present embodiment is flush with the sidewall of the lens, which is beneficial to better position the product in the braid vibrating plate and better improve the packaging yield. The first portion 1051-1 of the adhesive layer 1051 uniformly and completely fills the space between the metal strip and the lens unit without bubbles or gaps, which can significantly increase the hermeticity of the device. In addition, the second portion 1051-2 formed on at least a part of the substrate outside the metal strip can further block moisture and the like from entering the inside of the device, and particularly when the second portion fills up the space between the substrate outside the metal strip and the light transmitting unit, the airtightness of the device can be further improved.

The present embodiment also provides a method for manufacturing a light emitting device, as shown in fig. 1b, the method comprising the following steps:

s101: providing a substrate, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged, functional areas are formed on the first surface, and cutting areas are formed between the adjacent functional areas;

s102: providing an LED chip and fixing the LED chip on the functional region on the first surface of the substrate;

referring to fig. 1c and 1d, first a substrate 101 is provided, which may be any suitable substrate such as a ceramic substrate, a printed circuit board, etc. The present embodiment will be described with reference to a planar ceramic substrate as an example. The substrate 101 includes a first surface and a second surface opposite to each other, wherein a functional region 1011 is formed on the first surface, and an electrode pad 1013 (see fig. 1 a) is disposed on the second surface and communicates with the functional region 1011. The functional regions 1011 are formed as die bond regions for fixing the LED chip, and a cutting region 1018 is formed between adjacent functional regions. In the present embodiment, an area other than the functional area 1011 is defined as a non-functional area 1012.

In an optional embodiment of this embodiment, forming a metal strip 1012-1 surrounding the functional region on the substrate outside the functional region, where the metal strip is spaced apart from the functional region. As shown in fig. 1c and 1d, the non-functional region 1012 is also formed with a metal plating layer, specifically, the metal plating layer of the non-functional region is formed in a region other than the cutting region, and the metal plating layer is formed as a metal strip 1012-1 surrounding the functional region in the non-functional region, the metal strip and the functional region being spaced apart from each other. The metal strips of the functional region and the non-functional region may be formed by forming a metal plating layer on the first surface of the substrate 101. The metal plating layer may be formed on the first surface of the substrate 101 by, for example, etching, deposition, or the like. The thickness of the metal plating is between 30 μm and 100 μm, preferably around 50 μm, and since the metal plating has the above thickness, the substrate 101 forms the groove 106 in the cutting area 1018 as shown in fig. 1 c.

After the metal strips in the functional region and the non-functional region are formed on the substrate 101, the LED chip 103 is provided, and the LED chip may be any type of LED chip, for example, an ultraviolet or deep ultraviolet LED chip with a wavelength less than 400nm, especially a wavelength between 220nm and 385nm, and in this embodiment, an ultraviolet LED chip with a wavelength between 220nm and 385nm is taken as an example. The LED chip 103 is fixed to the functional region 1011 of the substrate 101. For example, the LED chip can be fixed by wire bonding, soldering, and other various processes. As shown in fig. 1d, the present embodiment takes a flip-chip LED as an example, and the LED chip is bonded to the functional region 1011. The electrode structure of the LED chip is LED out through the electrode pad 1013 on the second surface of the substrate communicating with the functional region 1011.

The LED chips are fixed to the substrate and may be arranged in different ways. Referring to fig. 6b and 6c, the LED chips shown in fig. 6b may be arranged side-by-side with the substrate, where the side of the LED chip is parallel to the side of the substrate, and the two are substantially parallel to each other. The LED chips and the substrate shown in fig. 6c may be arranged in a corner-to-corner manner, and four corners of the LED chips are respectively opposite to four sidewalls of the substrate. Especially when the size of the LED chip is large, the arrangement shown in fig. 6c is adopted, so that the space of the substrate can be fully utilized, and the utilization rate of the substrate can be improved. In practical application, the arrangement mode of the LEDs can be flexibly selected according to the size of the LED chip and the size of the substrate.

S103: and covering a light-transmitting plate on the substrate, connecting the light-transmitting plate to the substrate through a bonding material layer on the substrate outside the functional area, and covering the LED chip with the light-transmitting plate.

After the LED chip 103 is fixed on the substrate 101, a light-transmitting plate is covered on the substrate to package the LED chip. In this embodiment, the transparent plate is made of quartz glass. As shown in fig. 1e, the grooves 106 between the metal strips of the non-functional area are first filled with an adhesive material. Preferably, the thickness of the adhesive material filled in the groove 106 is greater than the thickness of the metal plating layer forming the functional region and the non-functional region. In a preferred embodiment, the bonding material is about 50 μm to about 200 μm above the metal coating. The adhesive material may be silica gel, white glue, fluorine resin, or the like. Then, quartz glass was coated on the substrate. In this embodiment, the quartz glass is a whole quartz glass having a plurality of light-transmitting units, wherein the light-transmitting units are lens structures as shown in fig. 1 a. Then, the process of covering the quartz glass is completed according to the processes shown in FIGS. 1f to 1 j:

first, as shown in fig. 1f, the substrate 101, on which the LED chip is fixed and on which the adhesive material is formed as shown in fig. 1d, is placed in a first jig 1015, the first jig 1015 has a slot (not specifically shown) for receiving the substrate 101, and the substrate 101 is placed in the slot to fix the substrate. Referring to fig. 1f, the top end of the sidewall of the first fixture 1015 has a positioning component, for example, in this embodiment, the positioning component is a positioning spring 1016, the number of the positioning springs is at least two, and the required number of the positioning components can be set according to actual needs. Of course, any other positioning means capable of positioning and separating may be used.

Then, as shown in fig. 1g, the quartz glass is placed in the second jig 1024. As shown in fig. 1g, in the present embodiment, the quartz glass is a whole quartz glass 1020 including a plurality of light-transmitting units 102, and the light-transmitting unit 1020 includes a light-transmitting region 1022 and a mounting seat 1021 located at the periphery of the light-transmitting region. The second jig 1024 has a chamber for accommodating the quartz glass 1020, and in order to accommodate and fix the quartz glass 1020, a layer of pyrolytic glue film is attached to an inner wall of the chamber of the second jig 1024, and then the whole piece of quartz glass 1020 is placed on the pyrolytic glue film to accommodate and fix the quartz glass in the second jig 1024. As also shown in fig. 1g, the top end of the side wall of the second tool 1024 also has a positioning part 1025, and the positioning part 1025 is engaged with the positioning part 1016 of the first tool 1015. For example, when the positioning component of the first fixture is the positioning spring 1016, the positioning of the second fixture may be the positioning hole 1025. The positioning parts of the first jig and the second jig can be interchanged so as to realize the positioning and the separation.

Thereafter, as shown in fig. 1h, the second jig to which the quartz glass 1020 is fixed is turned over so that the quartz glass faces the substrate 101. The positioning of the first jig and the second jig is realized by the positioning spring 1016 and the positioning hole 1025. The alignment of each light-transmitting unit with the LED chip on the substrate is achieved by this positioning, preferably, the center lines of the two coincide. As shown in FIG. 1h, the positioning spring 1016 is in contact with the positioning hole 1025, and the quartz glass 1020 is not in contact with the substrate 101.

Then, the positioned first jig and second jig are put into a lamination apparatus capable of being vacuumized, as shown in fig. 1i, and the quartz glass is first contacted with the first bonding layer 1051 on the substrate in the lamination process. Since the cavity 104 (refer to fig. 1 a) is formed between the mount 1021 of the light transmission unit and the light transmission region (convex lens) 1022, the mount 1021 of the light transmission region first comes into contact with the first adhesive layer on the substrate, and the LED chip is accommodated in the cavity 104 without coming into contact with or being pressed by the light transmission region, thereby ensuring the performance of the LED chip. During the laminating and vacuum-pumping process, since the height of the adhesive material filled in the groove is higher than that of the metal strip, the adhesive material in the groove is squeezed to flow onto the surrounding metal strip, as shown in fig. 1j, the amount of the adhesive material in the groove is reduced, and the adhesive material on the metal strip is gradually increased. Under the action of the vacuum, the adhesive material can continue to flow to the position of the metal strip until the position of the adhesive material lacking on the side of the metal strip is complemented, and the whole metal strip is covered to form a first part 1051-1 of the adhesive layer 1051, so that the quartz glass and the substrate are tightly combined. The remaining bonding material in the groove forms a second portion 1051-2 of the bonding layer 1051, which forms a continuous structure with the first portion on the metal strip, further enhancing the bonding force between the substrate and the quartz glass and enhancing the airtightness of the device. And in the laminating and vacuumizing processes, the bonding layer is heated and baked, the flowing of the bonding layer is promoted in the heating process, and the curing of the bonding layer is realized in the baking process. And meanwhile, the pyrolytic glue film attached to the inner wall of the cavity of the second jig in the heating process can be decomposed to lose the bonding effect, so that the quartz glass is separated from the second jig.

As shown in fig. 1j, the adhesive material in the groove flows towards the metal strip and the adhesive material in the groove becomes less and less fills the groove. In an alternative embodiment, the amount of adhesive material filled in the groove can be adjusted so that after the vacuum is applied to the lamination, the metal strip is uniformly covered with the adhesive material, and the groove is still filled with the adhesive material. This can further improve the hermeticity of the device.

Then, as shown in fig. 1k, the first jig and the second jig are removed. For example, the vacuum is first removed, and at this time, under the restoring force of the positioning spring 1016, the first jig and the second jig are initially separated, and then the second jig and the first jig are separated, so as to obtain the structure covered with the quartz glass 1020 shown in fig. 1 k. In the embodiment, the quartz glass is covered by the method, and the bonding material in the groove flows to the metal coating of the non-functional area from the groove, cannot flow to the functional area, and cannot pollute the functional area. Meanwhile, the central position of the lens and the central position of the chip can be ensured to deviate less than 100 mu m, and the left-right deviation of the central light-emitting angle is less than +/-3 degrees.

S104: and cutting the light-transmitting plate and the substrate by aligning the cutting area of the substrate until the substrate is cut through to form the light-emitting device.

As shown in fig. 1k, the cutting area 1018 of the alignment substrate 101 is cut in the direction indicated by the arrow A1, resulting in the LED light emitting device shown in fig. 1 a. In this embodiment, the substrate is covered with the whole quartz glass including the plurality of light-transmitting units, and the LED light-emitting device is obtained by cutting, so that it can be ensured that the side walls of the obtained light-emitting device are flush, that is, the side walls of the light-transmitting units and the side walls of the substrate are flush. Such structure is favorable to the product to better put the position in the vibrations dish of braid, better promotion packing yield.

Example two

The present embodiment provides an LED light emitting device, as shown in fig. 2a, the LED light emitting device 100-2' includes a substrate 101, an LED chip 103 disposed on a first surface of the substrate, a light transmitting unit 102 disposed on the substrate 101 and covering the LED chip 103, and an adhesive material layer connecting the substrate 101 and the light transmitting unit 102.

In this embodiment, the substrate 101, the LED chip 103, and the light-transmitting unit 102 are the same as those in the first embodiment, and are not repeated herein, except that:

as shown in fig. 2a, in this embodiment, the adhesive material layer comprises a first adhesive layer 1051 between the nonfunctional area 1011 and the mount and a second adhesive layer 1052 on the side wall of the mount. In a preferred embodiment, the first adhesive layer 1051 and the second adhesive layer 1052 on the same sidewall of the LED lighting device form a continuous structure, as shown in fig. 2a, forming a structure similar to an "L" shape. In the light emitting direction of the LED light emitting device, i.e., the direction indicated by the arrow O in fig. 2a, the thickness t1 of the first adhesive layer 1051 is 50 μm to 150 μm, and the thickness t2 of the second adhesive layer is 200 μm to 400 μm.

In another alternative embodiment of the present embodiment, as shown in fig. 2b, the non-functional region 1012 of the substrate 101 of the LED lighting device 100-2 is also formed with a metal plating layer, specifically, the metal plating layer of the non-functional region is formed in a region other than the cut region 1018'. The metal coatings of the functional region 1011 and the non-functional region 1012 may be formed at the same time, and the metal coatings of the functional region 1011 and the non-functional region 1012 may be spaced apart from each other. The thickness of the metal plating layer is between 30 and 100 μm, preferably about 50 μm. Since the metal plating layer has the above thickness, the substrate 101 forms a groove 106 between adjacent non-functional regions (see fig. 6 a). As shown in fig. 2b, at this time, the first adhesive layer 1051 includes a first portion 1051-1 positioned above the metal plating layer of the nonfunctional area and a second portion 1051-2 positioned at the peripheral area. In the light emitting direction of the LED light emitting device, and in the direction indicated by the arrow O in FIG. 2b, the thickness of the first portion 1051-1 is 35 μm to 50 μm, and the thickness of the second portion 1051-2 is 50 μm to 150 μm. In the light-emitting device 100-2, the first adhesive layer and the second adhesive layer also form a similar "L" shaped structure.

The bonding material layer with the L-shaped structure forms a coating structure for the non-functional area and the mounting seat of the device, the bonding material layer is fully formed between the mounting seat and the substrate, bubbles or gaps caused by lack of bonding materials do not exist, and the air tightness and the reliability of the product can be obviously improved. In addition, the first adhesive layer 1051 and the second adhesive layer 1052 may be formed of the same material or different materials, for example, silica gel, white gel, fluorine resin, etc. may be selected, and preferably have one or more of the following characteristics: the material has good adhesion, certain fluidity and certain reflection effect on light emitted by the LED chip, so that the air tightness of the product can be improved, and the service life of the product can also be prolonged.

Still referring to fig. 2a and 2b, the light-transmitting unit 102 in this embodiment forms a lens structure, wherein the convex lens of the light-transmitting region 1022 is formed as a hemispherical convex lens. The spherical diameter of the hemispherical convex lens is between 2.00mm and 3.50mm, preferably 3.20mm, and the height of the whole light transmission unit is between 1.50mm and 2.30mm, preferably 2.10mm. With the convex lens, as shown in fig. 3, the light emitting angle of the LED light emitting device is about 60 °. The light-emitting angle of the LED lighting device can also be adjusted by adjusting the filling material in the cavity 104 between the mounting base and the light-transmitting region. For example, when there is no filling material around the LED chip, i.e. air or nitrogen gas is in the cavity 104, the light-emitting angle of the LED light-emitting device is between 55 ° and 80 °; if the reflective material such as inorganic glue is filled around the LED chip, i.e. in the cavity 104, the light-emitting angle of the LED lighting device 100-2 is between 80 ° and 120 °.

In another alternative embodiment of this embodiment, as shown in fig. 4a, the light transmission unit is also formed as a lens structure, and includes a mounting seat 1021 and a light transmission region 1022, except that the light transmission region is formed as a semi-ellipsoid shape and is a semi-ellipsoid shape in the long axis direction. The height (i.e., the vertical distance between the highest and lowest surfaces of the lens structure) H1 of the light transmission unit having the semi-ellipsoidal light transmission region is about 3.00 to 3.50mm, the height H2 of the mount is 0.30 to 0.70mm, and the maximum width W of the convex lens is 2.00 to 3.50mm. As shown in fig. 4b, the light-emitting device having the light-transmitting unit of the semi-ellipsoidal light-transmitting region has an exit angle of about 35 °. The light exit angle of a light emitting device having a semi-ellipsoidal light transmitting unit can also be adjusted by adjusting the filling material in the cavity 104 between the mount and the light transmitting region. For example, when there is no filling material around the LED chip, i.e., air or nitrogen gas in the cavity 104, the light-emitting angle of the light-emitting device is about 25 ° to 55 °; if the reflective material such as inorganic glue is filled around the LED chip, i.e. in the cavity 104, the light-emitting angle of the light-emitting device is between 55 ° and 75 °.

In practical application, any light-transmitting unit can be selected according to the requirement of the light-emitting angle. In this embodiment, the light-transmitting unit may be a quartz glass lens, a plastic lens, or the like.

The present embodiment also provides a method for manufacturing a light emitting device, as shown in fig. 5, the method includes the following steps:

s201: providing a substrate, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged, functional areas are formed on the first surface, and cutting areas are formed between the adjacent functional areas;

s202: providing an LED chip and fixing the LED chip on the functional region on the first surface of the substrate;

referring to fig. 6a, first a substrate 101 is provided, which may be any suitable substrate such as a ceramic substrate, a printed circuit board, etc. This embodiment will be described with reference to a planar ceramic substrate as an example. The substrate 101 includes a first surface and a second surface opposite to each other, the first surface having a functional region 1011 and a non-functional region 1012 formed thereon, and the second surface having an electrode pad 1013 communicating with the functional region 1011 (see fig. 2a and 2 b). The functional regions 1011 are formed as die bond regions for fixing the LED chip, and a cutting region 1018' is formed between adjacent functional regions. In the present embodiment, an area other than the functional area 1011 is defined as a non-functional area 1012..

In an alternative embodiment of this embodiment, as shown in fig. 6a, the non-functional region 1012 is also formed with a metal plating layer, specifically, the metal plating layer of the non-functional region is formed in a region other than the cutting region 1018'. The metal plating layers of the functional region 1011 and the non-functional region 1012 may be formed simultaneously, with the metal plating layers of the functional region 1011 and the non-functional region 1012 being spaced apart from each other. The metal plating layer may be formed on the first surface of the substrate 101 by, for example, etching, deposition, or the like. The thickness of the metal plating layer is between 30 and 100 μm, preferably about 50 μm, and the substrate 101 forms the groove 106 in the cutting area 1018 (see fig. 6 a) due to the thickness of the metal plating layer.

After the functional region and the non-functional region are formed on the substrate 101, the LED chip 103 is provided, and the LED chip may be any type of LED chip, for example, an ultraviolet or deep ultraviolet LED chip with a wavelength less than 400nm, especially a wavelength between 220nm and 385nm, and in this embodiment, an ultraviolet LED chip with a wavelength between 220nm and 385nm is taken as an example. The LED chip 103 is fixed to the functional region 1011 of the substrate 101. For example, the LED chip can be fixed by various processes such as wire bonding, soldering, etc. As shown in fig. 6a, the present embodiment takes a flip-chip LED as an example, and the LED chip is bonded to the functional region 1011. The electrode structure of the LED chip is LED out through the electrode pad 1013 on the second surface of the substrate communicating with the functional region 1011.

The LED chips are fixed to the substrate and may be arranged in different ways. As shown in fig. 6b and 6c, the LED chips shown in fig. 6b may be arranged edge to edge with the substrate, and the side edges of the LED chips are parallel to the side edges of the substrate, and the two are substantially parallel to each other. The LED chips and the substrate shown in fig. 6c may be arranged in a corner-to-corner manner, and four corners of the LED chips are respectively opposite to four sidewalls of the substrate. Especially when the size of the LED chip is relatively large, the arrangement shown in fig. 6c is adopted, so that the space of the substrate can be fully utilized, and the utilization rate of the substrate can be improved. In practical application, the arrangement mode of the LEDs can be flexibly selected according to the size of the LED chip and the size of the substrate.

S203: and covering a light-transmitting plate on the substrate, connecting the light-transmitting plate to the substrate through a first bonding layer on the substrate outside the functional area, and covering the LED chip with the light-transmitting plate.

After the LED chip 103 is fixed on the substrate 101, a light-transmitting plate is covered on the substrate to package the LED chip. In this embodiment, the transparent plate is made of quartz glass, for example. The first adhesive layer 1051 is first formed on the surface of the nonfunctional area of the substrate 101. The first adhesive layer 1051 may be an adhesive material having a certain fluidity, such as silica gel, white gel, or fluorine resin. In this embodiment, as shown in FIG. 7a, a first portion 1051-1 of the first adhesive layer is first formed over the metal plating layer of the nonfunctional area 1012, and its thickness is controlled to be between 35 μm and 100 μm, for example, about 50 μm. Then, quartz glass was coated on the substrate. In this embodiment, the quartz glass is a whole quartz glass having a plurality of light-transmitting units, wherein the light-transmitting units are lens structures shown in fig. 2. The process of coating quartz glass is specifically shown in FIGS. 8a to 8 e:

first, as shown in fig. 8a, the substrate 101 with the first adhesive layer formed thereon and the LED chip fixed thereon shown in fig. 7a is placed in a first jig 1015, the first jig 1015 has a card slot (not specifically shown) for receiving the substrate 101, and the substrate 101 is placed in the card slot to fix the substrate. Referring to fig. 8a as well, the top end of the sidewall of the first fixture 1015 has a positioning component, for example, in this embodiment, the positioning component is a positioning spring 1016, the number of the positioning springs is at least two, and the required number of the positioning components can be set according to actual needs. Of course, any other positioning means capable of positioning and separating may be used.

Then, as shown in fig. 8b, the quartz glass is placed in the second jig 1024. As shown in fig. 8b, in the present embodiment, the quartz glass is a whole piece of quartz glass 1020 including a plurality of light-transmitting units 102, and the light-transmitting unit 1020 includes a light-transmitting region 1022 and a mounting seat 1021 located at the periphery of the light-transmitting region. The second jig 1024 has a chamber for accommodating the quartz glass 1020, and in order to accommodate and fix the quartz glass 1020, a layer of pyrolytic glue film is attached to an inner wall of the chamber of the second jig 1024, and then the whole piece of quartz glass 1020 is placed on the pyrolytic glue film to accommodate and fix the quartz glass in the second jig 1024. As also shown in fig. 8b, the top end of the side wall of the second tool 1024 also has a positioning part 1025, and the positioning part 1025 is mutually matched with the positioning part 1016 of the first tool 1015. For example, when the positioning component of the first fixture is the positioning spring 1016, the positioning of the second fixture may be the positioning hole 1025. The positioning parts of the first jig and the second jig can be interchanged so as to realize positioning and separation.

Thereafter, as shown in fig. 8c, the second jig to which the quartz glass 1020 is fixed is turned over so that the quartz glass faces the substrate 101. The positioning of the first jig and the second jig is realized by the positioning spring 1016 and the positioning hole 1025. The alignment of each light-transmitting unit with the LED chip on the substrate is realized through the positioning, and the central lines of the light-transmitting units and the LED chip on the substrate are preferably coincident. As shown in fig. 8c, at this time, the positioning spring 1016 is in contact with the positioning hole 1025, and the quartz glass 1020 is not in contact with the substrate 101.

Then, the positioned first jig and second jig are integrally placed in a laminating apparatus capable of being vacuumized, as shown in fig. 8d, and the quartz glass is first brought into contact with the first adhesive layer 1051 on the substrate by vacuuming in the laminating process. Since the cavity 104 (refer to fig. 2) is formed between the mount 1021 of the light transmission unit and the light transmission region (convex lens) 1022, the mount 1021 of the light transmission region is first brought into contact with the first adhesive layer on the substrate during lamination, and the LED chip is accommodated in the cavity 104 without being brought into contact with or pressed by the light transmission region, thereby ensuring the performance of the LED chip. During the lamination process, the first bonding layer is heated and baked to realize the curing. Meanwhile, the pyrolytic glue film attached to the inner wall of the chamber of the second jig in the heating process can be decomposed to lose the bonding effect, and the quartz glass is separated from the second jig.

Finally, as shown in fig. 8e, the first jig and the second jig are removed. For example, the vacuum is first removed, and at this time, under the restoring force of the positioning spring 1016, the first jig and the second jig are initially separated, and then the second jig and the first jig are separated, so as to obtain the structure covered with the quartz glass 1020 shown in fig. 8 e.

In this embodiment, the quartz glass is covered by the above method, so that the shift between the center position of the lens and the center position of the chip is less than 100 μm, and the shift between the left and right of the central light-emitting angle is less than ± 3 °.

In another alternative embodiment of this embodiment, instead of first forming the first adhesive layer on the metal plating layer of the non-functional area as shown in fig. 7a, the first adhesive layer 1051 is first filled in the groove 106 between the metal plating layers of the non-functional area as shown in fig. 7 b. The thickness of the first adhesive layer 1051 in the groove 106 is larger than the thickness of the metal plating layer forming the functional region and the non-functional region. In a preferred embodiment, the first adhesive layer 1051 is about 50 μm to about 200 μm higher than the metallization layer. The process of covering the quartz glass is then completed in the same manner as shown in fig. 8a to 8 e. The positioned first jig and the second jig are integrally placed into a laminating device capable of being vacuumized, so that quartz glass is firstly contacted with the first bonding layer 1051 in the groove, then, in the laminating process, the metal coating bonding material higher than the non-functional area is extruded to flow to the surrounding metal coating, the bonding material amount at the position of the groove originally filled with silica gel is reduced, and the metal coating of the non-functional area is covered with the bonding material and is attached to the quartz glass. And then vacuumizing is carried out, under the condition of keeping vacuum, the binding material higher than the metal coating in the groove forms irregular phase-change flow, and the binding material flows onto the metal coating in the non-functional area again to complement the position of the binding material lack on the groove and/or the metal coating in the non-functional area. After baking, the air tightness of the product is improved again. In the process, the bonding material in the groove flows on the metal coating of the groove flowing to the non-functional area, so that the bonding material cannot flow to the functional area and cannot pollute the functional area. The deviation between the central position of the lens and the central position of the chip is less than 100 mu m, and the left-right deviation of the central light-emitting angle is less than +/-3 degrees.

The adhesive material in the recess now forms the second portion 1051-2 of the first adhesive layer 1051 and the adhesive material over the metallization of the non-functional area forms the first portion 1051-1 of the first adhesive layer.

S204: forming a first trench over the cutting region;

as shown in fig. 9, in the structure of fig. 8e, the quartz glass is cut for the first time between the adjacent light-transmitting units along the direction indicated by the arrow a11 in fig. 9, and the quartz glass is cut through, so that a first groove 1023 is formed between the adjacent light-transmitting units above the cutting area, and the first groove 1023 is communicated with the groove 106 above the cutting area on the substrate.

S205: forming a second bonding layer in the first trench;

as shown in fig. 10, the first grooves 1023 are filled with an adhesive material to form second adhesive layers 1052, respectively. The second adhesive layer may be the same material as the first adhesive layer or a different material. And may be selected from silica gel, white gel or fluororesin. Taking silica gel as an example, after the groove and the first groove are filled with silica gel to form the second bonding layer, the silica gel is baked to be cured. As shown in fig. 10, when the groove 106 is not filled with the first adhesive layer, the adhesive material filled into the first trench flows into and fills the groove 106, forming the second portion 1051-2 of the first adhesive layer.

In the embodiment, the thickness of the first adhesive layer is 35-150 μm, the thickness of the second adhesive layer is larger than that of the first adhesive layer, and the thickness of the second adhesive layer is about 200-400 μm in the light outgoing direction of the LED light-emitting device. More specifically, the thickness of the first part of the first adhesive layer is 35 to 50 μm, and the thickness of the second part is 50 to 150 μm in the light emitting direction of the LED light emitting device.

S206: and performing second cutting, aligning the cutting area and cutting until the substrate is cut through to form the light-emitting device.

Also referring to fig. 10, a second adhesive layer is formed, the product is cut in the direction indicated by the arrow a12 of fig. 10 at the position of the second adhesive layer, the second adhesive layer 1052 and the substrate 101 are cut in this order, and the substrate 101 is cut through to obtain the LED light emitting device shown in fig. 2 b. In this embodiment, in the direction perpendicular to the cutting direction (arrows a11 and a 12), the width of the second cutting is smaller than that of the first cutting, so as to ensure that a bonding material layer with a certain width remains on the side wall of the formed LED light-emitting device. In a preferred embodiment, the width of the first cut is 2 times the width of the second cut, and the thickness of the adhesive material layer remaining on the sidewall of the LED light emitting device is 1/2 of the width of the second cut.

As shown in fig. 2, the sidewalls of the LED lighting device are entirely planar, that is, the sidewalls of the second bonding layer, the first bonding layer and the substrate are flush, which is beneficial to better positioning the product in the braid vibrating tray and better improving the packaging yield.

In another alternative embodiment of this embodiment, as shown in fig. 11a, in step S103, the quartz glass is provided as a plurality of individual light-transmitting units 102, which are also of lens structure, including a mount 1021 and a light-transmitting region 1022 in the form of a convex lens. The light-transmitting unit 102 may be an independent light-transmitting unit cut from a whole quartz glass sheet, or may be an independent light-transmitting unit formed separately. At this time, as shown in fig. 11b, the substrate 101 on which the LED chip is fixed and which forms the first adhesive layer is also placed in the first jig 1015, and unlike fig. 8a, the top end of the sidewall of the first jig 1015 shown in fig. 11b has a plurality of positioning members, for example, positioning springs 1016 in the present embodiment, and the number of positioning springs corresponds to the number of positioning members of the second jig to be described below. Of course, any other positioning means capable of positioning and separating may be used.

Then, as shown in fig. 11c, the plurality of light transmitting units 102 are placed in the second jig 1024. As shown in fig. 11c, in this embodiment, the second fixture 1024 has a plurality of cavities for accommodating the light transmission units, and the top end of the sidewall of the second fixture 1024 and the top end of the sidewall of the adjacent cavity are provided with positioning parts 1025, which are matched with the positioning parts 1016 of the first fixture 1015. For example, when the positioning component of the first fixture is the positioning spring 1016, the positioning of the second fixture may be the positioning hole 1025. The positioning parts of the first jig and the second jig can be interchanged so as to realize positioning and separation. The subsequent steps are the same as the processes shown in fig. 8c to 8e, and are not described herein again.

Since the light transmitting units are independent units, the first grooves 1023 are formed between the light transmitting units without being cut by a first cutting. After the structure shown in fig. 11a is obtained, the subsequent steps are still performed as shown in fig. 10, and finally, the LED light-emitting device shown in fig. 2b is also obtained.

In another alternative embodiment of this embodiment, as shown in FIG. 2c, the adhesive material layer of the LED light device 100-2 "further comprises a fourth adhesive layer 1054 formed on the upper surface of the partially light-transmissive unit. Specifically, the fourth adhesive layer is formed on at least a part of an upper surface of the mount of the light-transmitting unit. In the LED lighting device 100-2 ″ shown in fig. 2c, the fourth adhesive layer is formed on a portion of the upper surface of the mount of the light-transmitting unit. It is understood that the fourth adhesive layer may be formed on the entire upper surface of the mount. The fourth adhesive layer may be formed simultaneously with the formation of the second adhesive layer. The thickness of the fourth adhesive layer is about 10 μm to 200 μm in the light emitting direction of the LED light emitting device, i.e., the direction indicated by the arrow O in fig. 2 c. The bonding material layer formed in the way wraps the light-transmitting unit, so that the air tightness of the device can be further improved, and the bonding firmness of the light-transmitting unit and the substrate is improved.

EXAMPLE III

The present embodiment also provides an LED lighting device, and the same parts as those in the second embodiment are not described again, except that:

as shown in fig. 12a and 12b, the adhesive material layer connecting the substrate 101 and the light transmitting unit 102 in the LED light emitting device 100-3 of the present embodiment includes a third adhesive layer 1053 on at least a part of the side wall of the substrate 101, in addition to the first adhesive layer 1051 between the nonfunctional area 1012 and the mount and the second adhesive layer 1052 on the side wall of the mount. The third bonding layer, the first bonding layer and the second bonding layer form a continuous structure to form a T-shaped structure.

Referring to fig. 12a, a step 1017 is formed on a sidewall of a substrate 101, and a third adhesive layer is formed on a surface and a sidewall of the step 1017 and connected to the second adhesive layer. In this embodiment, the T-shaped adhesive material layer wraps the light-transmitting unit and a portion of the substrate, so that the air tightness of the product can be further improved.

This embodiment also provides a method for manufacturing an LED light-emitting device shown in fig. 12a, which is different from the method for manufacturing an LED light-emitting device provided in the second embodiment in that:

as shown in fig. 13, after the first groove 1023 is formed by cutting the lens through the first cut shown in fig. 9, the first cut is continued in the direction indicated by the arrow a11 to cut a part of the substrate 101, and a second groove 1014 is formed in the substrate 101. The second groove forms a coherent structure with the recess 106 and the first groove 1023. Thereafter, as shown in fig. 14, the second trench 1014 and the first trench 1023 are filled with an adhesive material to form a third adhesive layer 1053 and a second adhesive layer 1052 in this order. Then, as shown in fig. 14, the second dicing is performed in the direction indicated by the arrow a12, and the second adhesive layer 1052, the third adhesive layer 1053, and the substrate 101 are sequentially diced until the substrate is cut through, thereby obtaining the LED light-emitting device shown in fig. 12 a.

In another alternative embodiment of this embodiment, as shown in fig. 11, after a plurality of independent light-transmitting units are covered on the substrate 101 and the first grooves 1023 are formed between adjacent light-transmitting units, as shown in fig. 15, the substrate is cut for the first time through the first grooves 1023 along the direction indicated by the arrow a11, a part of the substrate 101 is cut, and the second grooves 1014 are formed on the substrate 101.

As described above, in the present embodiment, when the first cutting is performed to form the second grooves, the substrate is partially cut, and the thickness of the cut substrate, that is, the depth of the formed second grooves is about 1/3 to 2/3 of the entire thickness of the substrate, so that the strength of the substrate itself is ensured while the second grooves are formed.

Thereafter, as also shown in fig. 14, the second trench 1014 and the first trench 1023 are filled with an adhesive material to form a third adhesive layer 1053 and a second adhesive layer 1052 in this order. Then, as shown in fig. 14, the second dicing is performed in the direction indicated by the arrow a12, and the second adhesive layer 1052, the third adhesive layer 1053, and the substrate 101 are sequentially diced until the substrate is cut through, thereby obtaining the LED light-emitting device shown in fig. 12 a. As shown in fig. 12a, in the light emitting device 100-3, the thickness t1 of the first adhesive layer 1051 is 35 μm to 150 μm in the light emitting direction of the LED light emitting device, that is, the direction indicated by the arrow O in fig. 12a, wherein the thickness of the first portion 1051-1 is 35 μm to 50 μm, the thickness of the second portion 1051-2 is 50 μm to 150 μm, and the thickness t2 of the second adhesive layer is 200 μm to 400 μm; the thickness t3 of the third adhesive layer is about 1/3 to 2/3 of the entire thickness of the substrate.

In another alternative embodiment of this embodiment, as shown in fig. 12b, in the LED lighting device, the third adhesive layer 1053 is formed on the entire side wall of the substrate, and wraps the side wall. In this alternative embodiment, the adhesive material layer formed by the first adhesive layer 1051, the second adhesive layer 1052 and the third adhesive layer 1053 forms a wrapping effect on the lens 102 and the substrate 101, thereby further improving the air tightness of the device.

The manufacturing method of the LED light emitting device shown in fig. 12b is different from the manufacturing method shown in fig. 12a in that: the substrate is placed on a jig capable of fixing the substrate, and for example, the substrate may be adhered to a film having adhesive properties. The substrate is then cut and the substrate is cut completely through, forming a second trench through the entire substrate. A third adhesive layer covering the entire substrate sidewall as shown in fig. 12b is then formed in the second trench. The subsequent steps are the same as those for forming the LED light emitting device of fig. 12a, and are not described herein again.

In another alternative embodiment of this embodiment, as shown in fig. 12c, the adhesive material layer of the LED lighting device 100-4' further includes a fourth adhesive layer 1054 formed on the upper surface of the partially light-transmitting unit. Specifically, the fourth adhesive layer is formed on at least a part of an upper surface of the mount of the light transmitting unit. In the LED lighting device 200-4' shown in fig. 12c, the fourth adhesive layer is formed on a part of the upper surface of the mount of the light-transmitting unit. It is understood that the fourth adhesive layer may be formed on the entire upper surface of the mount. The fourth adhesive layer may be formed simultaneously with the formation of the second adhesive layer. The thickness t4 of the fourth adhesive layer is about 10 μm to 200 μm in the light emitting direction of the LED light emitting device, i.e., the direction indicated by the arrow O in fig. 12 c. The bonding material layer formed in the way wraps the light-transmitting unit, so that the air tightness of the device can be further improved, and the bonding firmness of the light-transmitting unit and the substrate is improved.

Example four

The present embodiment also provides an LED light emitting device, as shown in fig. 16a, the LED light emitting device 200-1 includes a substrate 201, an LED chip 203 disposed on a first surface of the substrate, a light transmitting unit 102 disposed on the substrate 201 to cover the LED chip 203, and an adhesive material layer connecting the substrate 201 and the light transmitting unit 202.

In this embodiment, the light-transmitting unit 102 is the same as the light-transmitting unit 102 of the first embodiment, the LED chip 203 is the same as the LED chip 103 of the first embodiment, and the adhesive material layer of this embodiment is also the same as the adhesive material layer of the second embodiment, which are not repeated herein. The difference from the second embodiment is that:

in this embodiment, the substrate 201 is a support with a bowl structure. The substrate 201 also includes a functional region 2011 and a non-functional region 2012 formed on the first surface, and electrode pads 2013 provided on the second surface to communicate with the functional region 2011. The functional region 2011 is formed on the bottom surface of the bowl structure, the non-functional region is the upper surface of the sidewall 2010 of the substrate, and the non-functional region includes the cutting region 2018'. In an alternative embodiment, the functional area may also be formed by a metal coating formed on the bottom surface of the bowl structure, the metal coating having a thickness of between 35 μm and 100 μm, preferably around 50 μm. In this embodiment, as shown in fig. 16a, the upper surface of the sidewall 2010 is directly used as the non-functional area.

The bonding material layer of the LED light emitting device of the present embodiment is also formed in a structure similar to an "L" shape, so that the airtightness and reliability of the device can be improved.

EXAMPLE five

The present embodiment also provides an LED light emitting device, as shown in fig. 16b, the LED light emitting device 200-1' includes a substrate 201, an LED chip 203 disposed on a first surface of the substrate, a light transmitting unit 102 disposed on the substrate 201 to cover the LED chip 203, and an adhesive material layer connecting the substrate 201 and the light transmitting unit 202.

In this embodiment, the same points as those in the fourth embodiment are not described again, but as shown in fig. 16b, in this embodiment, the light-transmitting unit 102 of the LED light-emitting device is a lens structure, the inner side surface of the lens structure, i.e., the surface close to one side of the LED chip, is a planar structure, and the light-transmitting unit 102 does not form the cavity shown in fig. 16a, but is flush with the lower surface of the mounting base. The light-transmitting unit reduces the distance between the lens structure and the LED chip, can provide better transmissivity, and improves the light-emitting effect of the device on the basis of improving the air tightness of the device.

EXAMPLE six

The present embodiment also provides an LED light emitting device, as shown in fig. 17a, the LED light emitting device 200-2 includes a substrate 201, an LED chip 203 disposed on a first surface of the substrate, a light transmitting unit 102 disposed on the substrate 201 to cover the LED chip 203, and an adhesive material layer connecting the substrate 201 and the light transmitting unit 202.

The same parts in this embodiment as those in the fourth embodiment are not described again, but the differences are: in this embodiment, as shown in fig. 17a, in the LED lighting device 200-2 of the present embodiment, the adhesive material layer includes a third adhesive layer 2053 on at least a part of the sidewall of the substrate 201, in addition to the first adhesive layer 2051 between the non-functional region 2012 and the mount 1021 and the second adhesive layer 2052 on the sidewall of the mount. The third bonding layer, the first bonding layer and the second bonding layer form a continuous structure to form a T-shaped structure.

The bonding material layer of the LED light-emitting device of the present embodiment is also formed into a structure similar to a "T", so that the air tightness and reliability of the device can be improved.

EXAMPLE seven

The present embodiment also provides an LED lighting device, as shown in fig. 17b, the LED lighting device 200-2' includes a substrate 201, an LED chip 203 disposed on a first surface of the substrate, a light-transmitting unit 102 disposed on the substrate 201 to cover the LED chip 203, and an adhesive material layer connecting the substrate 201 and the light-transmitting unit 202.

In this embodiment, the same points as those in the sixth embodiment are not repeated, but different from those in the sixth embodiment, as shown in fig. 17b, in this embodiment, the light-transmitting unit 102 of the LED light-emitting device is a lens structure, an inner side surface of the lens structure, that is, a surface close to one side of the LED chip, is a planar structure, and the light-transmitting unit 102 is not formed with the cavity shown in fig. 17a, but is flush with the lower surface of the mounting base. The light transmission unit reduces the distance between the lens structure and the LED chip, can provide better transmissivity, and improves the light emitting effect of the device on the basis of improving the air tightness of the device.

Example eight

The present embodiment also provides an LED light emitting device, as shown in fig. 18a, the LED light emitting device 200-3 includes a substrate 201, an LED chip 203 disposed on a first surface of the substrate, a light transmitting unit 102 disposed on the substrate 201 to cover the LED chip 203, and an adhesive material layer connecting the substrate 201 and the light transmitting unit 202.

As shown in fig. 18a, in the present embodiment, the substrates 201 are all the same as the substrates of the fourth embodiment, and are all the holders with bowls. The LED chip 203 is fixed in a bowl cup provided with a functional region 2011, and the upper surface of the bracket sidewall 2010 serves as a non-functional region 2012.

Referring also to fig. 18a, in the present embodiment, the light-transmitting unit 202 is a planar structure, and may be, for example, a flat quartz glass or plastic. In this embodiment, the thickness of the planar quartz glass is smaller than the thickness of the LED chip and smaller than the height of the side wall of the bowl support. For example, the thickness of the quartz glass is about 350 μm, the thickness of the chip is about 500 μm, and the draft of the side wall of the bowl and cup support is greater than 1000 μm. The light-transmitting unit 202 also includes a mounting base 2021 and a light-transmitting area 2022, the mounting base is attached to the upper surface of the sidewall 2010 of the substrate 201 through a bonding material layer, and the light-transmitting area covers the bowl area, that is, the light-transmitting area covers the LED chip in the bowl. As shown in fig. 18a, the side walls of the LED lighting device 200-1 are flush, i.e. the side walls of the light transmitting unit, the side walls of the adhesive material layer 1051 and the side walls of the bowl support are flush. Such structure is favorable to the product better to put in the good position of braid vibrations dish, better promotion packing yield.

The present embodiment also provides a method for manufacturing the LED light emitting device shown in fig. 18a, also referring to fig. 1c, the method also includes the following steps:

referring to fig. 19, a base plate 201, which is a support with a bowl, is provided. The substrate 201 includes a first surface and a second surface which are oppositely disposed, the first surface is formed with a functional region 2011, the second surface is provided with an electrode pad 2013 which is communicated with the functional region 2011, and the functional region is formed on the inner side surface of the bowl cup. The functional regions may also be formed by forming a metal plating layer on the first surface of the substrate 201, the metal plating layer having a thickness of between 30 μm and 100 μm, preferably around 50 μm. The functional region 2011 may be formed on the first surface of the substrate 201 by etching, deposition, or the like, for example. In this embodiment, as shown in fig. 19, a part of the upper surface of the side wall 2010 is directly used as the non-functional region 2012, and the cutting region 2018 of the non-functional region is formed on the upper surface of the side wall 2010 of the bracket.

After the functional regions are formed on the substrate 201, LED chips 203 are provided, and the LED chips may be any type of LED chips, for example, ultraviolet or deep ultraviolet LED chips with a wavelength less than 385nm, especially with a wavelength between 220nm and 385nm, in this embodiment, ultraviolet LED chips with a wavelength between 220nm and 385nm are taken as an example. The LED chip 203 is fixed to the functional region 2011 of the substrate 201 and fixed in a bowl. For example, the LED chip can be fixed by wire bonding, soldering, and other various processes. As shown in fig. 19, the present embodiment takes a flip-chip LED as an example, and bonds an LED chip to a functional region 2011. The electrode structure of the LED chip is LED out through an electrode pad 2013 on the second surface of the substrate, which is in communication with the functional region 2011.

S103: covering a light-transmitting plate on the substrate, connecting the light-transmitting plate to the substrate through an adhesive layer on the substrate outside the functional area, and covering the LED chip with the light-transmitting plate;

after the LED chip 203 is fixed on the substrate 201, a light-transmitting plate is covered on the substrate to package the LED chip. In this embodiment, the transparent plate is made of quartz glass. As shown in fig. 20, first, an adhesive layer 2051 is formed on the upper surface of the sidewall 2010 of the substrate 201. The bonding layer 2051 may be silica gel, white gel, or fluorine resin. The adhesive layer has certain fluidity, and the thickness of the adhesive layer is controlled to be less than 50 mu m. Quartz glass is then coated on the substrate, connected to the bonding layer. In this embodiment, the quartz glass is a monolithic quartz glass 2020 having a plurality of light transmitting units, wherein the light transmitting units are flat light transmitting units 202 shown in fig. 18 a. The process of fig. 8 a-8 d may also be used to cover the substrate 201 with quartz glass 2020, and the process will not be described in detail herein, and reference may be made to the description of the first embodiment.

Finally, as shown in fig. 21, a structure is formed in which the substrate 201 is covered with quartz glass 2020, in which each light-transmitting unit corresponds to each LED chip one by one.

S104: and cutting the substrate in alignment with the cutting area of the substrate until the substrate is cut through to form the light-emitting device.

After the structure shown in fig. 21 is formed, the cutting region aligned with the side wall of the support is cut until the substrate 201 is cut through, so as to obtain the LED light emitting device shown in fig. 18 a.

In another alternative embodiment of this embodiment, as shown in fig. 18b, in the light emitting device 200-3', the adhesive material layer includes a first adhesive layer 2051 on the upper surface of the sidewall and a second adhesive layer 2052 on the sidewall of the light transmitting unit. The first bonding layer 2051 and the second bonding layer 2052 form a continuous structure, form a structure similar to an L shape, and form a wrapping effect on the light-transmitting unit, so that the adhesion firmness of the light-transmitting unit and the substrate and the air tightness of the device can be greatly improved.

Referring also to fig. 5, forming the light emitting device shown in fig. 18b also includes the steps of:

s202: providing an LED chip and fixing the LED chip on the functional area on the first surface of the substrate;

s203: covering a light-transmitting plate on the substrate, connecting the light-transmitting plate to the substrate through a first bonding layer on the substrate outside the functional area, and covering the LED chip with the light-transmitting plate;

s204: forming a first trench over the cutting region;

steps S201 to S203 are the same as steps S101 to S103 of forming the light emitting device of fig. 18a, and are not described again here.

After the structure shown in fig. 21 is formed through the above steps S201 to S203, as shown in fig. 22, in addition to the structure of fig. 21, the quartz glass is first cut between the adjacent light transmitting units in the direction indicated by the arrow a21 in fig. 22, and the quartz glass is cut through, thereby forming the first groove 2023 between the adjacent light transmitting units.

S205: forming a second bonding layer in the first trench, the second bonding layer forming a continuous structure with the first bonding layer;

as shown in fig. 23, a second bonding layer 2052 is formed by filling a bonding material into the first groove 2023. The second adhesive layer may be the same material as the first adhesive layer or a different material. And may be selected from silica gel, white gel or fluororesin. Taking the silicone rubber as an example, after the first trench is filled with the silicone rubber to form the second bonding layer 2052, the silicone rubber is baked and cured.

In this embodiment, the first adhesive layer has a thickness less than that of the second adhesive layer, and the first adhesive layer has a thickness of about 35 μm to about 150 μm and the second adhesive layer has a thickness of about 200 μm to about 400 μm.

S206: and performing second cutting along the second bonding layer until the substrate is cut through to form the light-emitting device.

Also referring to fig. 23, after the second adhesive layer is formed, the product is cut in the direction indicated by the arrow a22 in fig. 23 at the position of the second adhesive layer, the second adhesive layer 2052, the first adhesive layer 2051, and the substrate 201 are cut in this order, and the substrate 201 is cut through to obtain the LED light-emitting device shown in fig. 18 b. In this embodiment, in the direction perpendicular to the cutting direction (arrows a21 and a 22), the width of the second cutting is smaller than that of the first cutting, so as to ensure that a certain width of the adhesive material layer remains on the sidewall of the formed LED light-emitting device. In a preferred embodiment, the width of the first cut is 2 times the width of the second cut, and the thickness of the adhesive material layer remaining on the sidewall of the LED light emitting device is 2 times the width of the second cut.

As shown in fig. 18b, the side wall of the LED light emitting device is entirely planar, that is, the side wall of the second bonding layer, the side wall of the first bonding layer and the side wall of the substrate are flush, so that the airtightness of the device is improved, and the better placement of the product in the braid vibration plate is facilitated, and the packaging yield is better improved.

In another alternative embodiment of this embodiment, as shown in fig. 24, in step S103, the quartz glass is provided as a plurality of individual light-transmitting units 202, which are also flat quartz glass, and the light-transmitting units include a mounting base 2021 and a light-transmitting region 2022. The light-transmitting unit 202 may be a separate light-transmitting unit cut from a single piece of quartz glass or may be a separate light-transmitting unit formed separately. The structure shown in fig. 24 is obtained by covering a plurality of light-transmitting cells on the substrate through the process shown in fig. 8a to 8d as well. Since the light transmitting units are independent units, the first grooves 2023 are formed between the light transmitting units without being cut by the first cutting. After the structure shown in fig. 24 is obtained, the subsequent steps are still performed as shown in fig. 23, and finally, the LED light-emitting device shown in fig. 18 is also obtained.

Example nine

The present embodiment also provides an LED lighting device, and the same parts as those in embodiment eight are not described again, except that:

as shown in fig. 25a, the bonding material layer connecting the substrate 201 and the light-transmitting unit 202 in the LED light-emitting device 200-4 of the present embodiment includes a third bonding layer 2053 on a part of the sidewall of the substrate 201, in addition to the first bonding layer 2051 between the upper surface of the sidewall of the bowl-cup holder and the mount, and the second bonding layer 2052 on the sidewall of the mount. The third bonding layer, the first bonding layer and the second bonding layer form a continuous structure to form a T-shaped structure.

Referring also to fig. 25a, a step 2017 is formed on the sidewall of the substrate 201 (and the sidewall of the sidewall 2010), and a third adhesive layer is formed on the surface and the sidewall of the step 2017 and connected to the third adhesive layer and the second adhesive layer. In this embodiment, the T-shaped adhesive material layer wraps the light-transmitting unit and a portion of the substrate, so that the air tightness of the product can be further improved.

This embodiment also provides a method for manufacturing an LED light-emitting device shown in fig. 25a, which is different from the method for manufacturing an LED light-emitting device provided in the first embodiment in that:

as shown in fig. 26, after the quartz glass 2020 is cut through to form the first grooves 1023 by the first cutting shown in fig. 22, the first cutting is continued in the direction indicated by the arrow a21 to cut a part of the substrate 201, and the second grooves 2014 are formed in the substrate 201. The second trench and the first trench 2023 form a coherent structure. Thereafter, as shown in fig. 27, the second trench 2014 and the first trench 2023 are filled with an adhesive material, thereby forming a third adhesive layer 2053 and a second adhesive layer 20523 in this order. Then, as shown in fig. 27, the third adhesive layer 2053, the second adhesive layer 2052, and the substrate 201 are cut in this order until the substrate is cut through, and the LED light-emitting device shown in fig. 25a is obtained by performing a second cutting in the direction indicated by the arrow a 22.

In another alternative embodiment of this embodiment, as shown in fig. 24, after a plurality of independent light-transmitting units are covered on the substrate 201 and the first trench 2023 is formed between adjacent light-transmitting units, as shown in fig. 28, the substrate is first cut along the direction indicated by the arrow a21 through the first trench 2023, a portion of the substrate 201 is cut, and the second trench 2014 is formed on the substrate 201. In this embodiment, the substrate is partially cut by performing the second cutting, and the thickness of the cut substrate, that is, the depth of the formed second groove, is about 1/2 of the thickness of the side wall of the substrate (the thickness in the cutting direction), and is preferably less than 1/2 of the thickness of the side wall, so as to ensure the strength of the substrate itself while forming the second groove.

Thereafter, as also shown in fig. 27, the second trench 2014 and the first trench 2023 are filled with an adhesive material, thereby forming a third adhesive layer 2053 and a second adhesive layer 2052 in this order. Then, as shown in fig. 27, the second dicing is performed in the direction indicated by the arrow a22, and the second adhesive layer 2052, the third adhesive layer 2053, and the substrate 201 are sequentially cut until the substrate is cut through, thereby obtaining the LED light-emitting device shown in fig. 25 a.

In order to verify the air tightness of the LED light emitting device of the present invention, the LED light emitting device in the prior art and the LED light emitting device of the present invention including the adhesive material layers having different structures are subjected to He gas leakage test, the LED light emitting devices 100-1, 100-2 and 100-3 shown in fig. 1, 2b and 12a of the present invention are selected as test objects, wherein the adhesive material layer of the light emitting device 100-1 includes only the first adhesive layer formed between the non-functional region and the light transmitting unit; the adhesive material layer of the light emitting device 100-2 includes the first adhesive layer and the second adhesive layerA second adhesive layer on the side wall of the light unit, the adhesive layer forming an 'L' -shaped structure; the adhesive material layer of the light emitting device 100-3 includes the first adhesive layer, the second adhesive layer, and a third material layer on a portion of the sidewall of the substrate, and the adhesive material layer forms a T-shaped structure. The results of the air tightness test of the above-mentioned light emitting devices are shown in fig. 29, and it can be seen from fig. 29 that the helium leakage rate of the light emitting device 100-1 of the present application is significantly reduced compared to the prior art light emitting devices, and the helium leakage rate of the prior art light emitting devices is 9.0 × 10 ^-9 Pa·m ² The helium leakage rate of the light-emitting device 100-1 is significantly lower than 9.0 × 10 ^-9 Pa·m ² S, mostly 6.0X 10 ^-9 Pa·m ² And s. It can be seen that the light emitting device 100-1 of the present application has significantly improved air tightness and thus reliability, compared to the light emitting devices of the prior art.

Further, by comparing the light-emitting devices 100-1, 100-2, and 100-3 of the present application, it can be seen from fig. 29 that He gas leakage rates of the light-emitting device 100-2 and the light-emitting device 100-3 are further reduced as compared with the light-emitting device 100-1. Specifically, the He gas leakage rates of the light emitting devices 100-3 are each less than 3.5X 10 ^-9 Pa·m ² A He gas leakage rate of less than 5.0X 10 for 80% of the light-emitting device 100-2 ^-9 Pa·m ² And(s) in the presence of a catalyst. As described above, the light-emitting device having the adhesive material layer of the "L" or "T" structure can further improve the airtightness and remarkably improve the reliability.

In another alternative embodiment of this embodiment, as shown in fig. 25b, a third adhesive layer 2053 is formed on the entire side wall of the substrate in the LED light emitting device 200-4', wrapping the side wall. In this alternative embodiment, the adhesive material layer formed by the first adhesive layer 2051, the second adhesive layer 2052, and the third adhesive layer 2053 has a wrapping effect on the lens 202 and the substrate 201, thereby further improving the airtightness of the device.

The manufacturing method of the LED light emitting device shown in fig. 25b is different from the manufacturing method shown in fig. 25a in that: the substrate is placed substantially on a jig capable of fixing the substrate, and for example, the substrate may be adhered to a film having adhesive properties. The substrate is then cut and the substrate is cut completely through, forming a second trench through the entire substrate. A third adhesive layer covering the entire substrate sidewall as shown in fig. 25b is then formed in the second trench. The subsequent steps are the same as those of forming the LED light emitting device of fig. 25a, and are not repeated herein.

The present invention is explained only with the LED light emitting device shown in fig. 25b that the third adhesive layer may be formed on the entire side wall of the substrate having the bowl cup. It is understood that, in the LED light emitting device shown in fig. 17a and 17b, the third adhesive layer may be formed on the entire sidewall of the substrate as well, and will not be described in detail herein.

Example ten

as shown in fig. 30, in the present embodiment, a step 207 is formed on the upper surface of the bracket sidewall 2010 of the substrate 201 of the LED light-emitting device 200-5, and the step 207 is formed on the side of the bracket sidewall 2010 close to the bowl (and the functional area). The light transmitting unit 202 is disposed on the step 207. The first bonding layer 2051 of the bonding material layer is located between the surface of the step 207 and the mount 2021 of the light-transmitting unit, and the second bonding layer 2052 is located between the sidewall of the step 207 and the sidewall of the light-transmitting unit 202. The first bonding layer 2051 and the second bonding layer 2052 form a continuous structure, and also form a structure similar to an L shape, so that a wrapping effect is formed on the light-transmitting unit, and therefore, the adhesion firmness of the light-transmitting unit and the substrate and the air tightness of the device can be greatly improved.

EXAMPLE eleven

The present embodiment also provides an LED lighting device, and the same parts as those in embodiment ten are not described again, except that:

as shown in fig. 31, in the present embodiment, the second adhesive layer 2052 of the LED light-emitting device 200-6 is located between the sidewall of the step 207 and the sidewall of the light-transmitting unit 202, and is also formed on a part of the upper surface of the bracket sidewall 2010. The first adhesive layer 2051 and the second adhesive layer 2052 form a continuous structure, and also form a structure similar to a "Z" shape, and compared with the LED light emitting device 200-5 of the tenth embodiment, in the LED light emitting device 200-6 of the present embodiment, the contact area between the second adhesive layer and the substrate 201 and the light transmitting unit 202 is increased, so that the connection firmness between the substrate and the light transmitting unit is further increased, and the air tightness of the device is further improved.

Example twelve

The present embodiment also provides an LED lighting device, and the same parts as those in the eleventh embodiment are not repeated, except that:

as shown in fig. 32, in the present embodiment, the second adhesive layer 2052 of the LED light-emitting device 200-7 is located between the side wall of the step 207 and the side wall of the light-transmitting unit 202, and is also formed on the entire upper surface of the bracket side wall 2010. The first adhesive layer 2051 and the second adhesive layer 2052 form a continuous structure, and also form a structure similar to a "Z" shape, compared with the LED light emitting device 200-6 of the eleventh embodiment, in the LED light emitting device 200-7 of the present embodiment, the contact area between the second adhesive layer and the substrate 201 and the light transmitting unit 202 is further increased, so that the connection firmness between the substrate and the light transmitting unit is further increased, and the air tightness of the device is further improved.

EXAMPLE thirteen

The present embodiment also provides an LED lighting device, and the same parts as those in the twelfth embodiment are not repeated, except that:

as shown in fig. 33, in the present embodiment, the second bonding layer 2052 of the LED light-emitting device 200-8 is located between the sidewall of the step 207 and the sidewall of the light-transmitting unit 202, and is also formed on the entire upper surface of the bracket sidewall 2010, and in the light-emitting direction of the LED light-emitting device, the upper surface of the second bonding layer 2052 is flush with the upper surface of the light-transmitting unit 202. It is understood that the upper surface of the second adhesive layer is slightly higher than the upper surface of the light transmitting unit 202, and the second adhesive layer is formed on the upper surface of the partially light transmitting unit, specifically, the upper surface of the mount. The first adhesive layer 2051 and the second adhesive layer 2052 form a continuous structure, and also form a structure similar to a "Z" shape, and in the LED light emitting device 200-7 of the eleventh embodiment, compared to the LED light emitting device 200-7 of the eleventh embodiment, the upper surface of the second adhesive layer is flush with the upper surface of the light transmitting unit, so as to wrap the entire side wall of the light transmitting unit; alternatively, the second adhesive layer may be formed on a portion of the upper surface of the light transmitting unit to form a package for the light transmitting unit. The LED light emitting device of the present embodiment further increases the contact area between the second adhesive layer and the substrate 201 and the light transmitting unit 202, thereby further increasing the connection firmness between the substrate and the light transmitting unit and further improving the air tightness of the device.

the LED light-emitting device of the present invention comprises: the LED light source comprises a substrate, an LED chip arranged in a functional region of the substrate, a light transmitting unit covering the substrate and the LED chip, and a bonding material layer connecting the substrate and the light transmitting unit. The above-mentioned substrate is further provided with a stripe structure located at the periphery of, preferably surrounding, and spaced apart from the functional region, the stripe structure being higher than the surface of the substrate, over which stripe structure an adhesive material is located. The metal strip has a certain height, and can increase the distance between the light transmitting unit and the substrate, so that the distance between the inner wall of the light transmitting unit and the LED chip can be increased. The LED chip is ensured not to be contacted with the light transmission unit or extruded by the light transmission unit, so that the performance of the LED chip is ensured. The height of the strip structure is adjustable, the strip structure can be adjusted according to the thickness of the LED chip and the depth of the inner cavity of the light transmitting area of the light transmitting unit, the LED chip and the inner cavity of the light transmitting unit are guaranteed to keep the optimal distance, and the LED chip is guaranteed to achieve the optimal light emitting effect.

The side walls of the LED light-emitting device are flush as a whole, the first part 1051-1 of the bonding layer is uniformly and completely filled between the metal strip and the lens unit, no bubbles or gaps exist, and the air tightness of the device can be obviously improved. In addition, the second portion formed on at least a part of the substrate outside the metal strip can further block moisture and the like from entering the inside of the device, and particularly when the second portion fills up the gap between the substrate outside the metal strip and the light-transmitting unit, the airtightness of the device can be further improved.

In another embodiment of the LED lighting device, the bonding material layer between the substrate and the light-transmitting unit includes: the LED light-emitting device comprises a substrate, a first bonding layer and a second bonding layer, wherein the first bonding layer is positioned on the outer side of a functional area on the first surface of the substrate, the second bonding layer is positioned on the side wall of the light-transmitting unit, and the bonding material layers form a continuous structure in the LED light-emitting device. The bonding material is integrally formed into a structure similar to an L shape, and the bonding material with the structure can fully bond the substrate and the light-transmitting unit, so that the bonding force between the substrate and the light-transmitting unit is enhanced, and the reliability of the product is improved. Meanwhile, the bonding material layer fully fills the gap between the substrate and the light transmission unit and is also formed on the side wall of the light transmission unit, so that the sealing property between the substrate and the light transmission unit is effectively improved, and the air tightness and the reliability of the product are enhanced.

In the light-emitting device of the present invention, the adhesive material layer further includes a third adhesive layer formed on at least a part of the side wall of the substrate, for example, a step is formed on the side wall of the substrate, and the third adhesive layer is formed on the surface and the side wall of the step. The bonding material layer comprising the third bonding layer forms a continuous structure resembling a "T" or "Z" shape. The structure forms a coating structure between the substrate and the light-transmitting unit and around the substrate and the light-transmitting unit, so that the air tightness and the reliability of the product can be further improved.

The above-mentioned layer of bonding material preferably has one or more of the following characteristics: the adhesive has good adhesion, certain fluidity and certain reflection effect on light emitted by the LED chip, and for example, silica gel, white glue, fluorine resin and the like can be selected. Therefore, the air tightness of the product can be improved, and the service life of the product can also be prolonged.

The method for manufacturing the light-emitting device of the present invention may be a method in which a whole quartz glass plate including a plurality of light-transmitting units is covered on a whole substrate, or a method in which a plurality of independent light-transmitting units formed of quartz glass are bonded to a whole substrate. Firstly, the whole quartz glass plate or the independent light transmission unit and the substrate are positioned by the corresponding positioning parts on the respective jigs, so that the light transmission area of the light transmission unit is ensured to coincide with the center of the LED chip on the substrate, the offset of the quartz glass plate or the light transmission unit can be effectively improved in the process, and the offset of the central light-emitting angle of the LED chip is avoided; the mounting seat of the light-transmitting unit is aligned with the area outside the functional area coated with the first bonding layer on the substrate, and the quartz glass is in contact with the first bonding layer on the substrate and is extruded to realize the tight fit of the quartz glass and the first bonding layer in the vacuum-pumping laminating equipment. Further, a first groove can be formed between the light-transmitting units, the first groove is filled with bonding materials to form a second bonding layer, and the second bonding layer is baked, cured and cut along the third bonding layer to obtain the light-emitting device, so that the light-emitting device comprising the bonding material layer with the L-shaped structure is formed. The method can ensure the air tightness and reliability of the light-emitting device, and the offset of the quartz glass can be effectively improved in the whole process.

The manufacturing method cuts part of the substrate along the first groove while forming the first groove, forms a second groove on the second substrate, and forms the third bonding layer in the second groove. Therefore, the bonding material layer similar to the T shape is formed, and the air tightness and the reliability of the device are further improved.

In the present invention, the substrate may be a planar substrate or a holder substrate with a bowl, and the light-transmitting unit may be a lens structure or a flat structure. The manufacturing method of the light-emitting device is variable in mode and high in applicability, and can manufacture various light-emitting devices and ensure good air tightness and reliability of devices.

The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Those skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and scope of the present invention as defined in the appended claims.

Claims

1. An LED lighting device, comprising:

the light-transmitting unit is arranged above the first surface of the substrate and covers the LED chip, the light-transmitting unit is of a lens structure, the lens structure comprises a convex lens and a mounting seat formed around the convex lens, and a cavity is formed between the mounting seat and the convex lens;

and the bonding material layer is connected with the substrate and the light transmission unit, is positioned above the strip structure and is also formed on at least part of the substrate outside the strip structure, the bonding material layer positioned above the strip structure is a first part, and the bonding material layer on at least part of the substrate outside the strip structure is a second part.

2. The LED lighting device according to claim 1, wherein the substrate is a planar substrate, and a metal plating layer is disposed on a first surface of the substrate and is higher than the first surface, and the metal plating layer forms the functional region and the stripe structure.

3. The LED light-emitting device according to claim 1, wherein the thickness of the adhesive material layer is 35 μm to 150 μm in the light-emitting direction of the LED chip.

4. The LED light emitting device of claim 1, wherein the first portion of the adhesive material layer has a thickness of 35-50 μm and the second portion has a thickness of 50-150 μm in a light emitting direction of the LED chip.

5. The LED lighting device of claim 1 or 2, wherein the lens structure is connected to the substrate through the mount;

the LED chip is located in the cavity.

6. The LED light-emitting device according to claim 5, wherein the thickness of the LED chip is 200 μm to 750 μm.

7. The LED light-emitting device according to claim 6, wherein the cavity of the light-transmitting unit has a depth of 100-900 μm, and the distance between the inner wall of the cavity and the top of the LED chip is 10-100 μm.

8. The LED lighting device of claim 1, wherein the height of the stripe structure is between 35 μ ι η and 100 μ ι η.

9. The LED light-emitting device according to claim 5, wherein the convex lens is a hemispherical convex lens, and a spherical center of the convex lens is located between an upper surface of the LED chip and an inner surface of the convex lens.

10. The LED light device as claimed in claim 5, wherein the convex lens is a semi-ellipsoidal convex lens in the direction of the long axis, and the center of the convex lens is located between the upper surface of the LED chip and the inner surface of the convex lens.

11. The LED lighting device according to claim 10, wherein a vertical distance between a highest point and a lowest surface of the lens structure is 3.00-3.50 mm, a height of the mounting seat of the lens structure is 0.3-0.7 mm, and a maximum width of the convex lens is 3.00-3.50 mm.

12. The LED luminescent device of claim 1, wherein the light transmissive unit is quartz glass.

13. The LED luminescent device of claim 1, wherein the adhesive material layer comprises a first adhesive layer over the stripe structure and a second adhesive layer on sidewalls of the light transmissive unit.

14. The LED lighting device of claim 1, wherein the adhesive material layer comprises a first adhesive layer over the stripe structure, a second adhesive layer on the side walls of the light-transmissive unit, and a third adhesive layer on at least some of the side walls of the substrate.

15. A method for manufacturing an LED light-emitting device is characterized by comprising the following steps:

covering a light-transmitting plate on the substrate, wherein the light-transmitting plate comprises a light-transmitting unit, the light-transmitting unit comprises a mounting seat positioned on the periphery of the light-transmitting unit and a light-transmitting area positioned in the middle of the mounting seat, the light-transmitting unit is in a lens structure, the light-transmitting area is a convex lens, a cavity is formed between the mounting seat and the convex lens, the light-transmitting plate is connected to the substrate through a bonding material layer on the substrate outside the functional area, the light-transmitting plate covers the LED chip, and the bonding material layer comprises a first part positioned above the strip structure and a second part positioned on at least part of the substrate outside the strip structure;

16. The method of claim 15, wherein the substrate is a planar substrate, and a metal plating layer is disposed on the first surface of the substrate and is higher than the first surface, the metal plating layer forms the functional region and the stripe structure, and a groove is formed between adjacent stripe structures.

17. The method of manufacturing of claim 16, wherein the step of covering the substrate with a light-transmitting plate further comprises the steps of:

providing quartz glass comprising a plurality of light-transmitting cells;

filling a bonding material in the groove;

18. The method of manufacturing of claim 16, wherein the step of covering the substrate with a light-transmitting plate further comprises the steps of:

providing a plurality of independent light-transmitting units formed of quartz glass;

filling a bonding material in the groove;

19. The manufacturing method according to claim 17 or 18, wherein the quartz glass is connected to the substrate through the mount, and the LED chip is located in the cavity.

20. The method of manufacturing according to claim 15, wherein the thickness of the adhesive material layer is 35 μm to 150 μm.

21. The manufacturing method according to claim 17 or 18, wherein the thickness of the first portion is 35 μm to 50 μm, and the thickness of the second portion is 50 μm to 150 μm.

22. The manufacturing method according to claim 19, wherein the depth of the cavity of the light-transmitting unit is 100 to 900 μm, and the distance between the inner wall of the cavity and the top of the LED chip is 10 to 100 μm.

23. The method of manufacturing of claim 21, wherein the height of the strap structure is between 35 μ ι η and 100 μ ι η.

24. The method of manufacturing of claim 15, further comprising, prior to cutting:

and forming a second bonding layer of the bonding material layer in the first groove.

25. The method of manufacturing of claim 15, further comprising, prior to cutting: