CN214411233U

CN214411233U - High light efficiency deep ultraviolet LED packaging structure

Info

Publication number: CN214411233U
Application number: CN202022613344.3U
Authority: CN
Inventors: 彭洋; 柳星星; 王志涛
Original assignee: Wuhan Gaoxing Uv Photoelectric Technology Co ltd
Current assignee: Wuhan Gaoxing Uv Photoelectric Technology Co ltd
Priority date: 2020-11-12
Filing date: 2020-11-12
Publication date: 2021-10-15
Anticipated expiration: 2030-11-12

Abstract

The utility model discloses a high light efficiency deep ultraviolet LED packaging structure. The packaging structure comprises a quartz glass cover plate, a three-dimensional packaging substrate, an adhesive layer and a deep ultraviolet LED chip; the inner wall and the bottom of the three-dimensional packaging substrate cavity are plated with high-reflection aluminum layers for reflection and extraction of deep ultraviolet light; the bonding layer is arranged at the upper end of the three-dimensional packaging substrate cavity and used for reliably bonding the quartz glass cover plate; the deep ultraviolet LED chip is attached to the circuit layer in the cavity of the three-dimensional packaging substrate and is electrically connected with the outside through the conductive through hole. Through the utility model provides a deep ultraviolet is effectively avoided to the large tracts of land high reflection aluminium lamination to be absorbed by the packaging body for more light is gone out from the packaging body, thereby improves deep ultraviolet LED luminous efficiency.

Description

High light efficiency deep ultraviolet LED packaging structure

Technical Field

The invention belongs to the field related to semiconductor manufacturing technology, and particularly relates to deep ultraviolet LED packaging.

Background

Compared with traditional ultraviolet light sources such as mercury lamps and fluorescent lamps, the ultraviolet LED has the advantages of energy conservation, environmental protection, long service life, small size, controllable wavelength and the like, wherein the deep ultraviolet LED (the wavelength is less than 300nm) can be used in the fields of sterilization, disinfection, water purification, biochemical detection and the like. At present, most of the traditional white light LEDs adopt organic materials (epoxy resin, silica gel and the like) as light emitting materials to protect LED chips and extract light. However, the organic light-emitting material has serious problems of aging, yellowing and the like under ultraviolet light and heat radiation environments for a long time, reduces the transmittance of the organic material, and is not suitable for high-reliability deep ultraviolet LED packaging.

In order to solve the reliability problem, researchers begin to adopt glass materials as the light emitting materials of the deep ultraviolet LEDs, and utilize the planar glass cover plate and the three-dimensional heat dissipation substrate to package the deep ultraviolet LEDs, thereby avoiding the use of organic materials as much as possible. However, the package structure still needs to consider the problems of extraction of light emitted from the side wall of the deep ultraviolet LED chip and absorption of light by the package substrate. Accordingly, there is a need to improve existing deep ultraviolet LED package structures.

SUMMERY OF THE UTILITY MODEL

To the above defect or the improvement demand of prior art, the utility model provides a high light efficiency deep ultraviolet LED packaging structure, through the high reflection aluminium lamination of three-dimensional packaging substrate cavity inner wall and bottom, effectively avoided the packaging body to the absorption of deep ultraviolet ray, improved deep ultraviolet LED light-emitting efficiency.

Correspondingly, in order to achieve the above purpose, the utility model adopts the following technical scheme:

a high-luminous-efficiency deep ultraviolet LED packaging structure comprises a quartz glass cover plate, a three-dimensional packaging substrate, an adhesive layer and a deep ultraviolet LED chip; the inner wall and the bottom of the three-dimensional packaging substrate cavity are plated with high-reflection aluminum layers for reflection and extraction of deep ultraviolet light; the bonding layer is arranged at the upper end of the three-dimensional packaging substrate cavity and used for reliably bonding the quartz glass cover plate; the deep ultraviolet LED chip is attached to the circuit layer in the cavity of the three-dimensional packaging substrate and is electrically connected with the outside through the conductive through hole.

Further, the high-reflection aluminum layer is mirror reflection or diffuse reflection, has a thickness of 20-500nm, and is manufactured on the inner wall of the three-dimensional packaging substrate cavity and the bottom area except the chip position by adopting a sputtering or evaporation mode.

Further, the three-dimensional packaging substrate is a high-thermal-conductivity aluminum nitride ceramic substrate, and the inclination angle of the cavity is 90 degrees, 120 degrees or 150 degrees.

Furthermore, the bonding layer is made of organic materials, metal solder or low-temperature glass cement, and the thick bottom is 20-100 μm.

Furthermore, the deep ultraviolet LED chip is a flip chip, and chip mounting is completed through an eutectic process.

Generally, through the utility model discloses the above technical scheme who thinks compares with prior art, through the high reflection aluminium lamination of three-dimensional packaging substrate cavity inner wall and bottom, can effectively avoid the encapsulation body to the absorption of deep ultraviolet ray for more deep ultraviolet rays can be exited, thereby improve deep ultraviolet LED light-emitting efficiency.

Drawings

Fig. 1 is a schematic diagram of a high light efficiency deep ultraviolet LED package structure provided by the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention. Furthermore, the technical features mentioned in the embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

Example 1

Referring to fig. 1, embodiment 1 provides a high light efficiency deep ultraviolet LED package structure, which includes a quartz glass cover plate 11, a three-dimensional package substrate 13, an adhesive layer 12, and a deep ultraviolet LED chip 16; the inner wall of the cavity of the three-dimensional packaging substrate 13 and the bottom area except the chip position are plated with a high-reflection aluminum layer 14 through sputtering, the thickness of the high-reflection aluminum layer 14 is 50nm, and the emergence of deep ultraviolet light is improved by utilizing the mirror reflection effect of the high-reflection aluminum layer 14; the three-dimensional packaging substrate 13 is a high-thermal-conductivity aluminum nitride ceramic substrate, and the inclination angle of the cavity is 120 degrees; the bonding layer 12 is arranged at the upper end of the cavity of the three-dimensional packaging substrate 13, is made of metal solder, has a thickness of 30 μm, and is used for metal welding with the quartz glass cover plate 11, wherein metal layers are arranged at the upper end of the cavity of the three-dimensional packaging substrate 13 and at corresponding positions on the quartz glass cover plate 11; the deep ultraviolet LED chip 16 is attached to the circuit layer 17 in the cavity of the three-dimensional packaging substrate 13 and is electrically connected with the outside through the conductive through hole 15. The packaging structure effectively improves light extraction by utilizing the large-area high-reflection aluminum layer, so that the high-light-efficiency deep ultraviolet LED is obtained.

It will be understood by those skilled in the art that the foregoing is merely a preferred embodiment of the present invention, and that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention.

Claims

1. A high-luminous-efficiency deep ultraviolet LED packaging structure is characterized by comprising a quartz glass cover plate, a three-dimensional packaging substrate, an adhesive layer and a deep ultraviolet LED chip; the inner wall and the bottom of the three-dimensional packaging substrate cavity are plated with high-reflection aluminum layers for reflection and extraction of deep ultraviolet light; the bonding layer is arranged at the upper end of the three-dimensional packaging substrate cavity and used for reliably bonding the quartz glass cover plate; the deep ultraviolet LED chip is attached to the circuit layer in the cavity of the three-dimensional packaging substrate and is electrically connected with the outside through the conductive through hole.

2. The high luminous efficiency deep ultraviolet LED package structure of claim 1, wherein the high reflective aluminum layer is specular or diffuse, has a thickness of 20-500nm, and is formed on the inner wall of the three-dimensional package substrate cavity and the bottom region excluding the chip position by sputtering or evaporation.

3. The high light efficiency deep ultraviolet LED package structure of claim 1, wherein the three-dimensional package substrate is a high thermal conductivity aluminum nitride ceramic substrate, and the cavity inclination angle is 90 degrees, 120 degrees or 150 degrees.

4. The high light efficiency deep ultraviolet LED package structure of claim 1, wherein the adhesive layer is an organic material, a metal solder or a low temperature glass cement, and has a thickness of 20-100 μm.

5. The high luminous efficiency deep ultraviolet LED packaging structure of claim 1, wherein the deep ultraviolet LED chip is a flip chip, and the chip mounting is completed by an eutectic process.