CN213340411U

CN213340411U - Deep ultraviolet LED packaging structure

Info

Publication number: CN213340411U
Application number: CN202020842515.7U
Authority: CN
Inventors: 柳星星; 彭洋; 王志涛
Original assignee: Wuhan Gaoxing Uv Photoelectric Technology Co ltd
Current assignee: Wuhan Gaoxing Uv Photoelectric Technology Co ltd
Priority date: 2020-05-15
Filing date: 2020-05-15
Publication date: 2021-06-01
Anticipated expiration: 2030-05-15

Abstract

The utility model discloses a dark ultraviolet LED packaging structure. Packaging structure is including the three-dimensional ceramic substrate that contains the box dam, contain quartz lens, solder layer and the deep ultraviolet LED chip of metal ring, be equipped with the step on the three-dimensional ceramic substrate box dam, the deep ultraviolet LED chip is located on the circuit layer in the three-dimensional ceramic substrate box dam, quartz lens becket one side correspond place in on the step of three-dimensional ceramic substrate box dam, and pass through solder layer accomplishes welded fastening. Through the utility model discloses, realized the deep ultraviolet LED of different luminous angles, and improved deep ultraviolet LED long-term reliability.

Description

Deep ultraviolet LED packaging structure

Technical Field

The invention belongs to the field related to semiconductor manufacturing technology, and particularly relates to a deep ultraviolet LED packaging structure.

Background

Compared with the traditional ultraviolet light source, the deep ultraviolet LED has the advantages of energy conservation, environmental protection, long service life, small volume, controllable wavelength and the like, and can be widely applied to the fields of sterilization, disinfection, water purification, biochemical detection and the like. It is worth noting that the traditional organic packaging material can have the problem of ultraviolet degradation under long-time deep ultraviolet radiation, seriously affects the transmittance and the cohesiveness of the organic material, and is not suitable for the packaging and manufacturing of deep ultraviolet LEDs. To this end, researchers have begun to use quartz glass instead of organic encapsulation materials to encapsulate the deep ultraviolet LED with a quartz window, thereby improving the reliability of the deep ultraviolet LED. However, most of the prior art still uses organic adhesive material to fix the quartz window and the package substrate, and it is difficult to maintain long-term reliability. Although the metal welding mode is adopted to fix the quartz window in the prior art, the adopted quartz window is mostly a plane window, the light emitting angle of the deep ultraviolet LED cannot be regulated, and the solder easily overflows onto a circuit layer of a packaging substrate in the metal welding process to cause the LED short circuit damage. Accordingly, there is a need to improve existing deep ultraviolet LED package structures.

SUMMERY OF THE UTILITY MODEL

To the above defect of prior art or improve the demand, the utility model provides a deep ultraviolet LED packaging structure has realized the deep ultraviolet LED of different luminous angles to deep ultraviolet LED long-term reliability has been improved.

Correspondingly, in order to achieve the above purpose, the utility model adopts the following technical scheme:

the utility model provides a deep ultraviolet LED packaging structure, includes the three-dimensional ceramic substrate that contains the box dam, contains quartzy window, quartz lens, solder layer and the deep ultraviolet LED chip of metal ring, be equipped with the step on the three-dimensional ceramic substrate box dam, quartz lens set up in quartzy window upper surface, deep ultraviolet LED chip is located on the circuit layer in the three-dimensional ceramic substrate box dam, quartzy window passes through the solder layer is fixed in on the step of three-dimensional ceramic substrate box dam.

Furthermore, a groove is formed in the step of the three-dimensional ceramic substrate dam and used for preventing the solder from overflowing to the circuit layer of the ceramic substrate after the solder layer is melted.

Furthermore, the metal system of the metal ring on the quartz window is titanium-copper-nickel-gold, chromium-nickel-gold or titanium-aluminum-titanium-platinum-gold, and the metal system is square or round, the thickness is 5-50 microns, and the width is 0.5-5 microns.

Further, the quartz lens and the quartz window are manufactured together through a fused glass or an integral molding process, and the emission angle of the quartz lens is 30, 60 or 120 degrees.

Furthermore, the thickness of the solder layer is 20-100 microns, the material is tin-based solder, and the welding temperature is 200-300 ℃.

Furthermore, the three-dimensional ceramic substrate box dam is a copper box dam and is manufactured on the planar ceramic substrate through an electroplating or bonding process.

Furthermore, the three-dimensional ceramic substrate box dam is a ceramic box dam and is manufactured through a low-temperature co-firing process or a high-temperature co-firing process, a metal layer is arranged on a step of the box dam, and the thickness of the metal layer is 1-10 microns.

Generally, through the utility model discloses above technical scheme that thinks compares with prior art, realizes the deep ultraviolet LED of different luminous angles through quartz lens to utilize metal bonding between quartz window and the three-dimensional ceramic substrate to avoid organic material to use and ultraviolet degradation, and the step and the groove structure that adopt the box dam prevent that metallic solder from spilling over to the circuit layer, thereby improve deep ultraviolet LED long-term reliability.

Drawings

Fig. 1 is a schematic diagram of a deep ultraviolet LED package structure provided by the present invention.

Fig. 2 is a schematic diagram of another deep ultraviolet LED package structure provided by the present invention.

The reference signs are: 11-three-dimensional ceramic substrate, 12-copper dam, 22-ceramic dam, 13, 23-quartz window, 14, 24-quartz lens, 15, 25-metal ring, 16, 26-solder layer, 17, 27-deep ultraviolet LED chip, 28-metal layer.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention. Furthermore, the technical features mentioned in the embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

Example 1

Referring to fig. 1, embodiment 1 provides a deep ultraviolet LED package structure, which includes a three-dimensional ceramic substrate 11 including a copper dam 12, a quartz window 13 including a metal ring 15, a quartz lens 14, a solder layer 16, and a deep ultraviolet LED chip 17; the copper dam 12 is manufactured on a planar ceramic substrate through an electroplating process, a step is arranged at the upper end of the copper dam 12, and a groove is formed in the step and used for preventing solder from overflowing to a circuit layer of the three-dimensional ceramic substrate 12 after the solder layer 16 is melted; the metal ring 15 of the quartz window 13 is manufactured on the lower surface of the quartz window 13 through a sputtering process, the metal system of the metal ring is titanium-copper-nickel-gold, the shape of the metal ring is square, the thickness of the metal ring is 30 micrometers, and the width of the metal ring is 1 micrometer; the quartz lens 14 is manufactured on the upper surface of the quartz window 13 through a fused glass process, and is in a hemispherical lens shape, and the emission angle is 60 degrees; the solder layer 16 is arranged on the step of the copper box dam 12, and is made of tin-silver-copper solder with the thickness of 80 microns; the deep ultraviolet LED chip 17 is eutectic-crystallized on the circuit layer in the three-dimensional ceramic substrate 11; the metal ring 15 of the quartz window 13 is correspondingly placed on the solder layer 16, and the solder layer 16 is melted at 260 ℃ to complete metal welding with the copper box dam 12, so that the deep ultraviolet LED airtight packaging is realized.

Example 2

Referring to fig. 2, embodiment 2 provides a deep ultraviolet LED package structure, which includes a three-dimensional ceramic substrate 21 including a ceramic dam 22, a quartz window 23 including a metal ring 25, a quartz lens 24, a solder layer 26, and a deep ultraviolet LED chip 27; the ceramic dam 22 is manufactured by a low-temperature co-firing process, a step is arranged at the upper end of the ceramic dam 22, a metal layer 28 with the thickness of 5 microns is arranged on the step, and a groove is formed in the step and used for preventing the solder from overflowing onto the circuit layer of the three-dimensional ceramic substrate 22 after the solder layer 26 is melted; the metal ring 25 of the quartz window 23 is manufactured on the lower surface of the quartz window 23 through an evaporation process, the metal system of the metal ring is titanium-aluminum-titanium-platinum-gold, the metal ring is circular, the thickness is 20 micrometers, and the width is 1.5 micrometers; the quartz lens 24 is manufactured on the upper surface of the quartz window 23 through an integral forming process, is in a plano-convex shape, and has an emission angle of 30 degrees; the solder layer 26 is arranged on the metal layer 28 of the step of the ceramic box dam 12, and is made of gold-tin solder with the thickness of 50 microns; the deep ultraviolet LED chip 27 is eutectic on the circuit layer in the three-dimensional ceramic substrate 21; the metal ring 25 of the quartz window 23 is correspondingly placed on the solder layer 26, and the solder layer 26 is melted at 280 ℃ to complete the metal welding with the metal layer 28 of the step of the ceramic dam 22, so that the deep ultraviolet LED airtight packaging is realized.

It will be understood by those skilled in the art that the foregoing is merely a preferred embodiment of the present invention, and is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

Claims

1. The utility model provides a deep ultraviolet LED packaging structure, its characterized in that is including the three-dimensional ceramic substrate that contains the box dam, contain quartzy window, quartz lens, solder layer and the deep ultraviolet LED chip of metal ring, be equipped with the step on the three-dimensional ceramic substrate box dam, quartz lens set up in quartzy window upper surface, deep ultraviolet LED chip is located on the circuit layer in the three-dimensional ceramic substrate box dam, quartzy window passes through the solder layer is fixed in on the step of three-dimensional ceramic substrate box dam.

2. The deep ultraviolet LED package structure of claim 1, wherein the step of the three-dimensional ceramic substrate dam is provided with a groove for preventing the solder from overflowing onto the circuit layer of the ceramic substrate after the solder layer is melted.

3. The deep ultraviolet LED package structure of claim 1, wherein the metal system of the metal ring on the quartz window is Ti-Cu-Ni-Au, Cr-Ni-Au or Ti-Al-Ti-Pt-Au, and the metal system is square or round, and has a thickness of 5-50 μm and a width of 0.5-5 μm.

4. The deep ultraviolet LED package structure of claim 1, wherein the quartz lens and the quartz window are made by fused glass or integral molding process, and the emission angle is 30, 60 or 120 degrees.

5. The package structure of claim 1, wherein the solder layer has a thickness of 20-100 μm, is made of tin-based solder, and has a soldering temperature of 200-300 ℃.

6. The deep ultraviolet LED package structure of claim 1, wherein the three-dimensional ceramic substrate dam is a copper dam fabricated on a planar ceramic substrate by electroplating or bonding.

7. The deep ultraviolet LED package structure of claim 1, wherein the three-dimensional ceramic substrate dam is a ceramic dam fabricated by a low temperature co-firing or high temperature co-firing process, a metal layer is disposed on a step of the dam, and the thickness of the metal layer is 1-10 μm.