JP2017220664A - Package structure of ultraviolet light-emitting diode part - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package structure of an ultraviolet light-emitting diode part.SOLUTION: A package structure of an ultraviolet light-emitting diode part has a substrate 100, an ultraviolet light-emitting diode 200, and an optical part 300. Emission wavelength range of the ultraviolet light-emitting diode 200 is 200-400 nm, the optical part 300 has amorphous silicon dioxide, and ultraviolet light passage rate is 80%. By combining the optical part 300 with a reflection ring 110 and a metal film 340, direct irradiation of a sealing material with ultraviolet light is blocked, and deterioration of the material can be circumvented. The package structure overcomes limitations of ultraviolet light-emitting diode 200 flattened package, and thereby application of backend manufacturing process is widened furthermore.SELECTED DRAWING: Figure 1B

Description

  The present invention relates to a package structure, and more particularly to a package structure of an ultraviolet light emitting diode part.

A light-emitting diode (light-emitting diode, abbreviated as LED) is a light-emitting part that uses a semiconductor as a light-emitting material. Its light-emitting principle is that photons are generated by recombining electrons and holes in a semiconductor by applying a voltage from the outside. Without the need to rely on filaments.
Therefore, the light-emitting diode has features such as mercury-free, energy saving, low power consumption, small volume, long life, fast reaction, and high light emission efficiency, and the conventional lamp easily generates heat and is easily damaged by heat. This is called a fourth generation illumination light source or a green light source.

The emission wavelength of the light emitting diode is determined by the band gap of the manufacturing material, and includes the wavelength range of ultraviolet rays, visible rays, and infrared rays.
Among these, infrared light emitting diodes can be applied to night surveillance cameras, optical fiber communications, and the like.
Visible light emitting diodes have various colors of light and are widely applied on products such as general lighting, indicators, backlights and plant lighting.
The ultraviolet light emitting diode is divided into three wavelengths of UVA, UVB, and UVC.
The emission wavelength of UVA is 320 to 400 nm, which is called near-ultraviolet light, and is applied to counterfeit bill identification, ultraviolet ray treatment, and air purification.
UVB is an ultraviolet ray having an emission wavelength of 280 to 320 nm and is applied to the biotechnology industry and medical health.
Ultraviolet light having an emission wavelength shorter than 280 nm is UVC and is also called deep ultraviolet light.
Since its energy is the strongest of the three, it can pass through the cell membrane and cell nucleus of microorganisms and break the molecular key bonds of nucleic acids, and is applied to water sterilization systems or air sterilization systems.
Currently, UVA and UVB application areas and technologies are already mature enough, and related industries and research institutes continue to develop UVC application areas and aim to overcome existing technical limitations.

At present, the package technology of ultraviolet light emitting diodes is mainly a coaxial type (Transistor outline can, TO-can) package structure.
The TO-can package technology has good airtightness and can reduce the environmental influence on the ultraviolet light emitting diode chip.
In addition, the TO-can package technology has good reliability because it is packaged with an inorganic material and the material is not deteriorated by long-term irradiation with ultraviolet rays.
However, a lead wire exists in the TO-can metal package structure, and its heat dissipating ability is limited, which is a bottleneck in heat conduction efficiency.
Therefore, the TO-can package technology is limited to low power ultraviolet light emitting diodes.
Further, since the TO-can has a non-planar package structure, there are many space needs restrictions in the alignment of modules and systems in the back end of the manufacturing process.

Surface-mount devices (SMD) packaging technology is a packaging technology conventionally used for visible light emitting diodes.
Since it has advantages such as small volume, large scatter color angle, and excellent light emission uniformity, the problem of space limitation can be overcome by replacing the SMD package method with TO-can package technology. .
However, since the SMD packaging technology is packaged with an organic polymer polymer (silicon, acrylic, epoxy resin, or the like), the chemical bond of each polymer polymer is broken under irradiation of ultraviolet rays.
Currently, there is a problem in that a conventional organic polymer sealing material is applied to an ultraviolet light emitting diode package, which is unreliable and easily deteriorates.
To overcome the shortcomings of the prior art, the present invention improves upon the conventional SMD package structure.
It can prevent the degradation of the package material while overcoming the limitations of the conventional planarized package while having the advantages of the conventional SMD structure.

  The prior art has the disadvantages of poor reliability and easy material degradation.

  In the present invention, the light emission wavelength range of the ultraviolet light emitting diode is 200 to 400 nm, the optical part of the package structure contains silicon dioxide, and the ultraviolet light transmission rate to the optical part is 80% or more, more than the conventional ultraviolet light emitting diode. The present invention relates to a package structure of ultraviolet light emitting diode parts having good light emission and passage efficiency.

  The present invention provides an ultraviolet light-emitting diode part that can prevent the deterioration of the material and can increase the amount of light emitted from the ultraviolet light-emitting diode by installing a metal film on the bottom of the optical part of the package structure, thereby preventing the sealing material from being irradiated with ultraviolet light. Related to the package structure.

  In the present invention, a reflection ring is installed on a substrate having a package structure, and is further disposed between an ultraviolet light emitting diode and an optical part, which can prevent irradiation of ultraviolet rays in the lateral direction and prevent deterioration of the material. It is related with the package structure of the ultraviolet light emitting diode part which can be used as the alignment mark at the time of combination.

The package structure of the ultraviolet light emitting diode part according to the present invention includes a substrate, an ultraviolet light emitting diode and an optical part.
The ultraviolet light emitting diode is placed on the substrate.
The optical part includes silicon dioxide.
And the structure has a concave tank.
The concave tank faces and covers the substrate, and adheres the substrate and the bottom of the optical part with a sealing material, so that the ultraviolet light emitting diode is located between the substrate and the optical part.

  The package structure of the ultraviolet light emitting diode part according to the present invention further has a metal film adhered to the bottom of the optical part and on the substrate. A reflection ring is installed between the ultraviolet light emitting diode and the optical part.

  In one embodiment of the present invention, an accommodation space is provided between the substrate and the optical part.

  In one embodiment of the invention, the silicon dioxide has an amorphous structure.

  In one embodiment of the present invention, the connection position between the bottom of the optical part and one side surface is a non-perpendicular connection surface.

  In one embodiment of the invention, the height of the sealing material is lower than the height of the reflective ring.

  In one embodiment of the invention, the sealing material comprises a resin.

  In one embodiment of the invention, the metal film comprises aluminum.

  The package structure of the ultraviolet light emitting diode parts of the present invention overcomes the limitations of the planar package of ultraviolet light emitting diodes, thereby broadening the application of the backend manufacturing process.

It is a schematic diagram of the package structure of this invention. It is a schematic diagram of the optical part bottom part structure of this invention. It is a ultraviolet route figure of this invention package structure.

The package structure of the ultraviolet light emitting diode part according to the present embodiment has an optical part.
The optical part has amorphous silicon dioxide, and ultraviolet light having an emission wavelength of 200 to 400 nm can pass through the optical part, and has a better light transmission rate than the conventional one.
In addition, ultraviolet rays in a wider wavelength range can pass, and by combining a reflective ring and a metal film, the problem that conventional sealing materials deteriorate after being irradiated with ultraviolet rays can be solved, and the luminous efficiency of ultraviolet light emitting diodes can be improved. Thus, it is possible to overcome the limitations of the current planarized package of ultraviolet light emitting diodes.

As shown in FIGS. 1A and 1B, which are a schematic diagram of a package structure of the present invention and a schematic diagram of an optical part bottom structure of the present invention, the package structure of the present invention includes a substrate 100, an ultraviolet light emitting diode 200, and an optical part 300. .
The light emitting diode 200 is installed on the substrate 100.
Moreover, the optical part 300 has a concave tank 310.
The concave tank 310 faces the substrate 100 and covers the concave tank 310 to form an accommodation space 400. The optical part bottom 320 and the substrate 100 are connected by the resin 350.
Accordingly, the ultraviolet light emitting diode 200 is positioned between the substrate 100 and the optical part 300.

In the above-described embodiment, the optical part 300 is silicon dioxide having a high-purity amorphous structure. Ultraviolet light having an emission wavelength of 200 to 400 nm can pass through the optical part 300, and the transmittance reaches 80% or more.
In addition, the optical part 300 can overcome the limitation that conventional quartz cannot be directly press-molded, can be formed into a structure having a concave tub 310, can form a receiving space 400, directly covers the substrate 100, and is fluorescent. It can be replaced with a resin package.
Accordingly, the influence of the external environment on the ultraviolet light emitting diode can be isolated, and the concave tank 310 of the optical part 300 is installed directly covering the substrate 100.
Thus, unlike a general mounting structure (having a reflective cover), the light emitting angle of the ultraviolet light emitting diode can be expanded.

In the present embodiment, a reflective ring 110 is further provided between the ultraviolet light emitting diode 200 and the optical part 300 on the substrate 100.
In addition, between the reflective ring 110 and the ultraviolet light emitting diode 200 on the substrate 100, a conductive hole 120 and a metal wiring board 130 are installed, and the ultraviolet light emitting diode 200 is connected to the metal wiring board 130 by a gold wire 140. .
A metal film 340 is provided on the optical part bottom 320, and the connection position between the optical part bottom 320 and one side surface is a non-perpendicular connection surface 330.

As shown in FIGS. 1A and 1B, when performing an ultraviolet light emitting diode parts package, it includes three parts of die bonding, wire bonding, and package.
First, the ultraviolet light emitting diode 200 is placed on the substrate 100 and connected to the metal wiring board 130 by the gold wire 140.
Subsequently, the optical part 300 is placed on the substrate 100.
The reflection ring 110 installed on the substrate 100 is used as an alignment mark, and alignment is performed in the process of placing the optical part 300.
Next, the optical part 300 is pressed and bonded using the resin 350.
Thereby, the optical part bottom part 320 and the board | substrate 100 contact | adhere.
Since the connection position between the bottom part 320 of the optical part and the one side surface is the non-perpendicular connection surface 330, the resin 350 is pressed only toward the outside in the adhesion process and does not overflow into the accommodation space 400. .
In addition, since the reflection ring 110 is installed between the optical part bottom 320 and the ultraviolet light emitting diode 200, the resin 350 can be prevented from overflowing into the housing space 400.

As shown in FIG. 2, which is an ultraviolet route diagram of the package structure of the present invention, the present invention ensures the reliability of the resin 350 in the package structure in the following manner.
That is, a metal film 340 is installed on the bottom part 320 of the optical part.
It contains aluminum.
Aluminum is the only thin film that can reflect short wavelengths among the current thin film materials, has an extremely high reflectivity for ultraviolet rays, and has strong adhesion to optical parts.
When the ultraviolet light B is applied to the optical part 300 to form the reflected light B ′, the reflected light B ′ is subsequently applied to the metal film 340 and reflected to form the reflected light C.
Accordingly, it is possible to prevent the resin 350 from being irradiated with ultraviolet rays and cause deterioration, and at the same time, the amount of light emitted from the ultraviolet light emitting diode can be increased.
The other is that a reflective ring 110 is installed between the ultraviolet light emitting diode 200 and the optical part 300, and the height of the reflective ring 110 is higher than that of the resin 350. Thus, the reflected light A ′ is formed, the irradiation of the ultraviolet rays on the resin 350 in the lateral direction is prevented, and the effect of preventing the material deterioration is achieved.

In summary, the ultraviolet light emitting diode part package structure of the present invention uses an optical part containing silicon dioxide having an amorphous structure, so that all ultraviolet light with an emission wavelength of 200 to 400 nm can pass through, and the transmittance is also high. Reaches 80% or more, so that the light emitting performance of the ultraviolet light emitting diode can be improved.
Moreover, since the conventional quartz has a melting point that is too high, the limitation that it cannot be press-molded can be overcome.
Furthermore, by installing the concave tank structure, the emission angle of the ultraviolet light-emitting diode can be expanded and the amount of emitted light can be increased.
In addition, the package structure of the present invention can achieve the purpose of preventing deterioration by preventing direct irradiation of ultraviolet rays onto the resin through the metal film and the reflective ring, thereby protecting the material.
Thus, the present invention can solve the problem of insufficient reliability of the sealing material when packaging the ultraviolet light emitting diode parts by the planar packaging technology.
The present invention overcomes the limitations of the conventional UV light emitting diode planar package, and at the same time has the advantages of a planar package and replaces it with a high cost TO-can package structure, so that the UV light emitting diode can be used in the back-end manufacturing process. A wider range of applications is possible.

  The embodiments of the present invention described above do not limit the present invention, and the scope protected by the present invention is based on the claims described below.

DESCRIPTION OF SYMBOLS 100 Substrate 110 Reflection ring 120 Conductive hole 130 Metal wiring board 140 Gold wire 200 Ultraviolet light emitting diode 300 Optical part 310 Recess tank 320 Optical part bottom part 330 Non-perpendicular connecting surface 340 Metal film 350 Resin 400 Accommodating space

Claims (21)

A package structure of ultraviolet light emitting diode parts, including a substrate, ultraviolet light emitting diodes and optical parts,
The emission wavelength range of the ultraviolet light emitting diode is 200 to 400 nm, and is installed on the substrate.
The optical part comprises silicon dioxide;
The passing rate of the ultraviolet light emitted by the ultraviolet light emitting diode to the optical part is 80% or more,
The optical part has a concave tank, and the concave tank faces the substrate and covers the concave part, whereby the ultraviolet light emitting diode is located between the substrate and the optical part. Package structure of UV light emitting diode parts.   The package structure of an ultraviolet light-emitting diode part according to claim 1, further comprising a reflective ring on the substrate, and disposed between the ultraviolet light-emitting diode and the optical part.   The package structure of the ultraviolet light emitting diode part according to claim 1, wherein an accommodation space is provided between the substrate and the optical part.   The package structure of an ultraviolet light emitting diode part according to claim 1, wherein the silicon dioxide has an amorphous structure.   2. The package structure of an ultraviolet light emitting diode part according to claim 1, wherein the connection position between the bottom of the optical part and one side surface is a non-perpendicular connection surface.   The package structure of an ultraviolet light emitting diode part according to claim 1, wherein the optical part is connected to the substrate by a sealing material.   The package structure of ultraviolet light emitting diode parts according to claim 6, wherein the sealing material includes a resin.   The package structure of an ultraviolet light emitting diode part according to claim 6, wherein a height of the sealing material is lower than a height of the reflecting ring.   The package structure of an ultraviolet light emitting diode part according to claim 1, wherein a metal film is installed on the bottom of the optical part.   The package structure of an ultraviolet light emitting diode part according to claim 9, wherein the metal film includes aluminum. Ultraviolet light emitting diode parts package structure, comprising a substrate, ultraviolet light emitting diodes and optical parts,
The ultraviolet light emitting diode is installed on the substrate,
A package structure of an ultraviolet light emitting diode part, wherein a metal film is installed on the bottom of the optical part, and the optical part and the substrate are connected by a sealing material.   The package structure of an ultraviolet light emitting diode part according to claim 11, further comprising a reflective ring on the substrate and disposed between the ultraviolet light emitting diode and the optical part.   The package structure of ultraviolet light emitting diode parts according to claim 11, wherein an accommodation space is provided between the substrate and the optical part.   The package structure of an ultraviolet light emitting diode part according to claim 11, wherein the optical part includes silicon dioxide.   The package structure of an ultraviolet light emitting diode part according to claim 14, wherein the silicon dioxide has an amorphous structure.   The package structure of ultraviolet light emitting diode parts according to claim 11, wherein the light emitting wavelength range of the ultraviolet light emitting diode is 200 to 400 nm.   The package structure of the ultraviolet light emitting diode part according to claim 11, wherein the ultraviolet light emitted by the ultraviolet light emitting diode has a passing rate of 80% or more through the optical part.   The package structure of the ultraviolet light emitting diode part according to claim 11, wherein a connection position between the bottom part of the optical part and one side surface is a non-perpendicular connection surface.   The package structure of an ultraviolet light emitting diode part according to claim 11, wherein a height of the sealing material is lower than a height of the reflection ring.   The package structure of an ultraviolet light emitting diode part according to claim 11, wherein the sealing material includes a resin.   The package structure of an ultraviolet light emitting diode part according to claim 11, wherein the metal film includes aluminum.

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