TWM482855U - Light-emitting diode packaging structure - Google Patents

Description

Light emitting diode package structure

The present invention relates to a package technology of a light-emitting diode, and more particularly to a package structure of a light-emitting diode.

It has been known in the art to use a light emitting diode (LED) as a solid state light source. The LED emits light by a combination of electron-hole pairs in the forward biasing of the p-n junction of the semiconductor material. Compared with traditional lamps such as incandescent bulbs, the advantages of using LED as a solid-state light source are low power consumption and long service life. In particular, since the white LED device has a high color rendering index (CRI), it is widely used in various lighting applications such as various lighting devices and light source decoration.

However, in order to meet the lighting needs for different purposes, in addition to LED devices capable of generating visible light, such as UV LED devices capable of generating ultraviolet light such as UVA, UVB, UVC, or even UVD, can be applied to medical equipment, anti-counterfeiting devices, special gel adhesion. In the field of curing, and with the improvement of UV LED device process, luminous efficiency and service life, the replacement of traditional ultraviolet light lamps with LED devices has become a significant trend in the development of special LED devices.

However, due to the ultraviolet light, the colloids of plastic, silicone, epoxy resin, etc. are deteriorated. In turn, the package tightness and integrity of the UV LED device are destroyed, resulting in a reduction in the life of the LED device. In order to solve the problem of colloidal deterioration of the above-mentioned prior art, it has been proposed to use only metal and glass as an external packaging material of a UV LED device, and to apply a KOVAR alloy (an alloy of iron-nickel-cobalt) to achieve a metal-to-glass sealing effect. Since the colloid of the prior art is not used, the colloidal deterioration does not occur and the package tightness and integrity of the UV LED device are destroyed. The commercially available TO-18, TO-65, and TO-66 are used in this package. technology. However, the package structure of the metal glass is only used as a heat dissipation path through an elongated metal guide pin connected to an external power source, and the heat dissipation effect is not good, and the heat dissipation requirement of the high power UV LED device cannot be overcome.

Therefore, how to provide a package structure that can overcome the cracking of the package caused by ultraviolet light and can have the heat dissipation performance has become an urgent problem to be solved in the industry.

In order to solve the problems of the prior art, the present invention provides a light emitting diode package structure, comprising: a base having an upper surface; a light emitting diode disposed on the upper surface of the base; and a wire layer formed and penetrating The susceptor is electrically connected to the illuminating diode; the encapsulant is formed on the upper surface of the pedestal and is disposed around the illuminating diode; the light transmissive layer is formed on the encapsulant. Forming a receiving space with the pedestal and the encapsulant; a conductor layer formed on the upper surface of the pedestal, the outer side of the encapsulant and a portion of the outer side of the transparent layer; and a solder layer formed on the pedestal The conductor layer on the upper surface; and a lens formed on the light transmissive layer without forming the conductor layer.

In one form of the creation, the accommodation space is filled with an inert gas such as nitrogen or a vacuum.

In one form of the creation, the composite includes two separate bonding wires, and wherein the hair is The light diodes respectively comprise two separate terminals, and the two separate bonding wires are electrically connected to the two separate terminals of the light emitting diode and the corresponding wire layer.

In one form of the present invention, the lens is composed of a plurality of microlenses.

In one form of the present invention, the spacer layer is coated on the outside of the solder layer or the nano silver layer.

In one form of the present invention, the light transmissive layer is composed of glass or quartz.

In one form of the present invention, the lens is formed over the conductor layer around the light transmissive layer.

In one form of the present invention, the conductor layer forms a eutectic structure with the solder layer or the nanosilver layer.

In one form of the present creation, the height of the solder layer is slightly equal to or slightly higher than the height of the encapsulant.

In one form of the creation, the weld layer is selected from the group consisting of solder, silver or tin gold.

In one form of the present invention, the light-emitting diode system is disposed on the upper surface of the base in a surface-adhesive manner.

In one form of the creation, the light-emitting diode system is an ultraviolet light-emitting diode.

Compared with the prior art, the LED package structure of the present invention can overcome the problem of ultraviolet light leakage when the encapsulant colloid is deteriorated by the conductor layer formed on the pedestal, the encapsulant and the partially transparent layer. In addition, the LED can be realized by adjusting the range of the conductor layer covering the light transmissive layer. The effect of aperture size adjustment. Furthermore, the package structure of the present invention can effectively improve the heat dissipation effect of the light-emitting diode.

10‧‧‧ Pedestal

101‧‧‧ wire layer

11‧‧‧Lighting diode

12‧‧‧Package colloid

13‧‧‧Transparent layer

131‧‧‧ unwanted parts of the light transmission layer

14‧‧‧Conductor layer

15‧‧‧welding layer

16‧‧‧ lens

17‧‧‧welding line

18‧‧‧Enclosed space

19‧‧‧Isolation

20‧‧‧resist pattern

30‧‧‧ cutting line

Fig. 1 is a schematic cross-sectional view showing the light emitting diode package structure of the present invention.

The 2a~2e diagram is a schematic cross-sectional view of the process of the LED package structure.

The embodiments of the present invention are described below by way of specific embodiments, and those skilled in the art can readily appreciate other advantages and functions of the present invention from the disclosure of the present disclosure. The present invention can also be implemented or applied by various other specific embodiments. The details of the present specification can also be modified and changed without departing from the spirit of the present invention.

The structure, the proportions, the sizes and the like of the drawings are only used to cope with the contents disclosed in the specification for the understanding and reading of those skilled in the art, and are not intended to limit the conditions for the implementation of the present invention. Therefore, it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should not be affected by the effect of the creation and the purpose that can be achieved. The technical content can be covered. In the meantime, the terms "upper", "lower" and "one" as used in the specification are merely for convenience of description, and are not intended to limit the scope of the invention, the relative relationship may be changed or Adjustments, if there is no material change in the content of the technology, are also considered to be the scope of implementation of this creation.

Please refer to FIG. 1 , which is a schematic cross-sectional view of the package structure of the present invention. Figure. As shown in FIG. 1 , the LED package structure of the present invention includes a susceptor 10 , a light emitting diode 11 , an encapsulant 12 , a light transmissive layer 13 , a conductor layer 14 , a solder layer 15 , and a lens 16 .

The susceptor 10 can be, for example, a ruthenium substrate, a ceramic substrate, or other conventional semiconductor substrates. In the present embodiment, the susceptor 10 includes two separate conductor layers 101. Two separate conductor layers 101 are formed and penetrated through the susceptor 10 for electrically connecting to the LEDs 11, and two separate conductor layers 101. They are used as positive and negative electrical connection terminals.

In this embodiment, the LEDs are UV photodiodes, such as, but not limited to, UVA LEDs emitting wavelengths of 320 to 400 nm, UVB LEDs of 275 to 320 nm, or UVC LEDs of 200 to 275 nm. The polar body 11 is disposed on the upper surface of the susceptor 10 through surface adhesion (SMT). More specifically, the LED 11 has two electrical connection terminals (positive and negative terminals, respectively, not shown), and is electrically connected to the corresponding positive and negative electrical connections through the two bonding wires 17, respectively. The wire layer 101 of the terminal. By the surface adhesion method, the heat energy generated by the light-emitting diode 11 during light emission can be effectively transmitted to the susceptor 10 and then dispersed by the susceptor 10, so that the heat dissipation performance of the entire light-emitting diode device can be improved.

In other embodiments, the light-emitting diodes may be disposed by other packaging technologies, such as, but not limited to, flip-chip bonding, and electrically connecting the light-emitting diodes to the corresponding wire layers through the solder balls.

It should be noted that the number of the light-emitting diodes 11 can also be changed into plural numbers as needed. In other embodiments, the LED 11 is not limited to the ultraviolet light emitting diode, and may be a general blue, red or green light emitting diode.

The encapsulant 12 is disposed on the upper surface of the susceptor 10 and is disposed around the illuminating diode 11 . The encapsulant 12 can be made of glass paste, polymer encapsulant, epoxy or other plastic. Or rubber-like colloids.

The light transmissive layer 13 is formed on the encapsulant 12 and forms a space with the LEDs 11. In the embodiment, the light transmissive layer 13 is made of transparent glass or quartz.

In this embodiment, the susceptor 10, the LED assembly 11, the encapsulant 12, and the light transmissive layer 13 form a closed space 18 that can be filled with nitrogen. In other embodiments, it is also possible to evacuate or fill other gases.

The conductor layer 14 is formed on the upper surface of the susceptor 10, on the outer side of the encapsulant 12, and on the outer side of the portion of the light transmissive layer 13. The conductor layer 14 may be selected from titanium/copper/nickel or titanium tungsten/copper/nickel. The desired photoresist pattern may be formed by dry film lamination, and the conductor layer 14 may be formed by sputtering or the like. The upper surface of the susceptor 10, the outer side of the encapsulant 12, and a portion of the outer side of the light transmissive layer 13 are then removed from the photoresist pattern. When the portion of the light-transmitting layer 13 outside the conductor layer 14 is not formed, light emitted from the light-emitting diode 11 can be emitted through the light-transmitting layer 13.

The size of the photoresist pattern can determine the area of the conductive layer 14 covering the light transmissive layer 13. In other words, the range of the light emitted by the LED 11 can be controlled, so that the effect of controlling the aperture size can be achieved.

In addition, since the conductor layer 14 covers the outer side of the encapsulant 12, even if the encapsulant 12 is exposed to ultraviolet light or other light for a long period of time, or because the light-emitting diode 11 is cracked due to thermal energy generated by the light-emitting diode, the conductor The setting of layer 14 does not cause a problem of light leakage.

The solder layer 15 is formed on the conductor layer 14, and more specifically, on the conductor layer 14 on the upper surface of the susceptor 10. Preferably, in the present embodiment, the solder layer 15 can form a eutectic structure with the conductor layer 14. More preferably, the height of the solder layer 15 may be slightly equal to or slightly higher than the height of the encapsulant 14. The solder layer 15 may be selected from the group consisting of solder, silver (which may be, for example, nano-sized silver) or tin gold.

The lens 16 is formed on the light transmissive layer 13 without forming the conductor layer 14. The lens 16 is used to adjust the angle of the light. In other embodiments, lens 16 can be comprised of a plurality of microlenses. In addition, the lens can be formed on the light-transmitting layer 13 without forming the conductor layer 14, and can be formed on the conductor layer 14 around the light-transmitting layer 13 to achieve a better light-emitting angle control effect.

In this embodiment, preferably, an isolation layer 19 may be included on the outer side of the solder layer 15 to avoid oxidation of the solder layer 15. The barrier layer 19 can be, for example, silicone.

Please refer to the 2a~2e diagram, which is a schematic cross-sectional view of the process of the LED package structure. Please understand the contents disclosed in the foregoing embodiments. The LED package structure of the present invention can be applied to a wafer level packaging process, and a plurality of LED devices can be packaged at the same time.

As shown in FIG. 2a, the light-emitting diodes 11 are disposed on the susceptor 10 having the two separated wire layers 101 by surface bonding, and the light-emitting diodes 11 are electrically connected to the two through the two bonding wires 17, respectively. The conductor layer 101 corresponding to the positive and negative electrical connection terminals is described. Then, the encapsulant 12 is surrounded around the LEDs 11, and the susceptor 10, the LEDs 11, the encapsulant 12 and the light transmissive layer 13 are combined into a closed space 18 by gas filling technology. The susceptor 10, the light-emitting diode 11, the encapsulant 12 and the light-transmitting layer 13 are combined into a closed space 18 to form a vacuum state by using nitrogen gas (or other inert gas) or by vacuuming. Further, a desired photoresist pattern 20 can be formed on the light transmissive layer 13 by dry film bonding.

Referring to FIG. 2b, the unnecessary portion 131 of the light transmissive layer 13 is removed, and the conductor layer 14 is formed on the upper surface of the susceptor 10 by the sputtering or the like, the outer side of the encapsulant 12, and a portion of the transparent layer 13 The outer side of the photoresist pattern 20 is then removed.

Referring to FIG. 2c, a solder layer 15 is formed on the conductor layer 14, and more specifically, A solder layer 15 is formed on the conductor layer 14 on the upper surface of the susceptor 10.

Referring to Fig. 2d, a lens 16 is formed on the light-transmissive layer 13 on which the conductor layer 14 is not formed.

Next, as shown in Fig. 2e, the isolation layer 19 covering the solder layer 15 can be selectively formed on the outer side of the solder layer 15. The finished LED device is then cut along the cutting line 30 by means of a cutting device. It should be noted that the cutting device may first cut the soldering layer 15 from above to cause the soldering layer 15 to produce a cutting notch, and then form the insulating layer 19 on the soldering layer 15, and then, the cutting device cuts the base from below. The seat 10 and the isolation layer 19 formed on the gap of the solder layer 15. In this way, a separate LED device can be produced.

In summary, the LED package structure of the present invention can overcome the problem of ultraviolet light leakage when the encapsulant colloid is deteriorated by the conductor layer formed on the pedestal, the encapsulant and the partially transparent layer. In addition, by adjusting the range of the conductor layer covering the light transmissive layer, the effect of adjusting the size of the LED aperture can be achieved. Furthermore, the package structure of the present invention can effectively improve the heat dissipation effect of the light-emitting diode.

The above embodiments are intended to illustrate the principles of the present invention and its effects, and are not intended to limit the present invention. Anyone who is familiar with the art may modify the above embodiments without departing from the spirit and scope of the creation. Therefore, the scope of protection of this creation should be as listed in the scope of patent application described later.

10‧‧‧ Pedestal

101‧‧‧ wire layer

11‧‧‧Lighting diode

12‧‧‧Package colloid

13‧‧‧Transparent layer

14‧‧‧Conductor layer

15‧‧‧welding layer

16‧‧‧ lens

17‧‧‧welding line

18‧‧‧Enclosed space

19‧‧‧Isolation

Claims (13)

A light emitting diode package structure comprising: a base having an upper surface; a light emitting diode disposed on an upper surface of the base; a wire layer formed and penetrating the base and electrically connected to the light emitting The encapsulant is formed on the upper surface of the pedestal and is disposed around the illuminating diode; the light transmissive layer is formed on the encapsulant and forms a cavity with the pedestal and the encapsulant a space; a conductor layer formed on an upper surface of the base, on an outer side of the encapsulant and a portion of the outer side of the light transmissive layer; a solder layer formed on the conductor layer on the upper surface of the base; and a lens Is formed on the light transmissive layer without forming the conductor layer. The illuminating diode package structure of claim 1, wherein the accommodating space is filled with an inert gas or evacuated. The light emitting diode package structure of claim 2, wherein the inert gas is nitrogen. The illuminating diode package structure of claim 1, further comprising two separate bonding wires, wherein the illuminating diodes respectively comprise two separate terminals, wherein the two separate bonding wires are electrically connected to the two The two separate terminals of the light emitting diode and the corresponding wire layer. The light emitting diode package structure according to claim 1, wherein the lens is composed of a plurality of microlenses. The light-emitting diode package structure according to claim 1, further comprising an isolation layer covering the outside of the solder layer. The light emitting diode package structure according to claim 1, wherein the light transmissive layer is made of quartz or glass. The light emitting diode package structure according to claim 1, wherein the lens complex Formed on the conductor layer around the light transmissive layer. The light emitting diode package structure of claim 1, wherein the conductor layer and the solder layer form a eutectic structure. The light emitting diode package structure of claim 1, wherein the solder layer has a height slightly equal to or slightly higher than a height of the encapsulant. The light emitting diode package structure of claim 1, wherein the solder layer is selected from the group consisting of solder, silver or tin gold. The light emitting diode package structure according to claim 1, wherein the light emitting diode system is disposed on the upper surface of the base in a surface adhesive manner. The light emitting diode package structure according to claim 1, wherein the light emitting diode system is an ultraviolet light emitting diode.