CN207977346U - A kind of LED component and lighting device - Google Patents

Abstract

The utility model is related to a kind of LED component and lighting devices.LED component includes：Substrate；The electron transfer layer set gradually, radiating layer and hole transmission layer above substrate, wherein substrate includes transparent filling material；P electrode/reflective layers, setting is on the hole transport layer；And N electrodes, it is arranged between electron transfer layer and transparent filling material.The utility model proposes a kind of completely new LED structure, it is suitable for making LED on silicon Si substrates, cost reduction and there is very high power.

Description

A kind of LED component and lighting device

Technical field

The utility model is related to LED technology field, particularly a kind of LED component and lighting device.

Background technology

Based on including compound semiconductors and its polynary chemical combination such as aluminium nitride (AlN), gallium nitride (GaN), indium nitrides (InN) The LED of the III/V group-III nitride semiconductors of object (AlInGaN) is worldwide promoted the use of.It is white compared to common Vehement lamp, LED light source can energy saving about 80%, be ideal energy-conserving product.However, restricting LED replaces incandescent lamp comprehensively There is also some difficulties.An important aspect is that existing LED costs are still higher among these.Therefore, how to reduce LED's Cost is one of the important directions of this field research.

Utility model content

For the technical problems in the prior art, the utility model proposes a kind of LED components, including：Substrate；Lining The electron transfer layer set gradually, radiating layer and hole transmission layer above bottom, wherein substrate includes transparent filling material； P- electrode/reflective layers, setting is on the hole transport layer；And N- electrodes, it is arranged in electron transfer layer and transparent filling material Between material.

LED component as described above wherein forms reflector in substrate.

LED component as described above further comprises that the conductive path being electrically connected with N- electrodes, wherein conductive path extend To the substrate of reservation.

LED component as described above, wherein conductive path is between electron transfer layer and transparent filling material.

LED component as described above, wherein conductive path are located on transparent filling material.

LED component as described above wherein the substrate retained is located at around LED component, and is enough to prevent light from revealing.

LED component as described above, wherein filling transparent material includes light conversion material.

LED component as described above, P- electrode/reflective layers are high reflecting metal layer or P- electrode/reflective layers include saturating Bright ohmic contact layer and high reflecting metal layer.

LED component as described above includes N pads and P pads positioned at homonymy or opposite side, wherein P pads and reservation Substrate form solid support structure.

Other side according to the present utility model proposes a kind of lighting device, including one or more as above any LED component.

The utility model proposes a kind of completely new LED structure, it is suitable for making LED, cost reduction on silicon Si substrates And there is very high power.

Description of the drawings

In the following, preferred embodiments of the present invention will be described in more detail in conjunction with attached drawing, wherein：

Figure 1A-Fig. 1 C are the schematic diagrames for making LED chip on Sapphire substrates in the prior art；

Fig. 2A-Fig. 2 D are the schematic diagrames for making LED chip on a si substrate in the prior art；

Fig. 3 A- Fig. 3 K are the LED component schematic diagrames of one embodiment according to the present utility model；

Fig. 4 A- Fig. 4 D show the LED component schematic diagram according to the utility model embodiment；

Fig. 5 is the schematic diagram of the manufacturing method of the LED component of one embodiment according to the present utility model；And

Fig. 6 is the schematic diagram of the packaging method of the LED component of one embodiment according to the present utility model.

Specific implementation mode

It is new below in conjunction with this practicality to keep the purpose, technical scheme and advantage of the utility model embodiment clearer Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that is retouched The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to The range of the utility model protection.

In the following detailed description, the specific embodiment for being used for illustrating the application as the application part may refer to Each Figure of description.In the accompanying drawings, similar reference numeral describes substantially similar component in different drawings.This Shen Each specific embodiment please has carried out description detailed enough following so that has the general of ability domain-dependent knowledge and technology Logical technical staff can implement the technical solution of the application.It should be appreciated that other embodiments can also be utilized or to the application Embodiment carry out structure, logic or electrical change.

Figure 1A-Fig. 1 C are the schematic diagrames of LED chip on sapphire Sapphire substrates in the prior art.As shown in Figure 1A, Direct epitaxial growth electron transfer layer 102, radiating layer 103 and hole transmission layer 104 on Sapphire substrates 101.Electronics passes Defeated layer 102, radiating layer 103 and hole transmission layer 104 form the light emitting structure of LED.For example, electron transfer layer includes N Type gallium nitride N-GaN, radiating layer includes the multi-element compounds InGaN of gallium nitride GaN, indium nitride InN etc., and hole transmission layer packet Include p-type gallium nitride P-GaN.It will be appreciated by those skilled in the art that illustrating possible application with being merely exemplary above LED light emitting structures, other existing light emitting structures can similarly be applied in this field.

Include reflecting layer 105 and reflecting layer protective layer 106 on LED light emitting structures as described in Figure 1A.Reflecting layer 105 Can be metal material with high reflectivity, including but not limited to silver, aluminium, nickel etc..Alternatively, reflecting layer 105 can be transparent The composite construction of conductive material such as ITO and highly reflective material, it is transparent conductive material to be contacted with hole transmission layer 104, It is highly reflective material above.Light loss can be reduced in this way, improve light extraction efficiency.Reflecting layer protective layer 106 is in reflecting layer On 105, shield to reflecting layer 105.

Sapphire substrates 101 are high light transmissions.The blue light that LED light emitting structures are sent out may be from Sapphire substrates It reveals side.Since the blue light of leakage is harmful, it is necessary to carry out additional processing.A kind of mode of processing blue light leakage is to move Except Sapphire substrates.As shown in Figure 1B, the structure of Figure 1A is transferred on metal base 107, then by Sapphire substrates 101 remove.Sapphire substrates are removed to need to use laser separation technique, cost very high.Handle the another kind of blue light leakage Mode is in light conversion materials such as Sapphire substrate outer wrapping fluorescent materials, to form light conversion layer 108, as shown in Figure 1 C. However, in order to expose the side of Sapphire substrates to the open air, it is necessary first to the scribing of Sapphire substrates, cutting substrate, isolate list Only LED chip；Then individual LED is packaged again.So not only so that the technique of encapsulation is increasingly complex, cost is more Height also increases the volume of the LED after encapsulation, is unfavorable for improving power density.

Fig. 2A-Fig. 2 D are the schematic diagrames for making LED chip on a si substrate in the prior art.Fig. 2A is shown in Si substrates Epitaxial wafer on make schematic diagram after reflecting layer 205 and reflecting layer protective layer 206.Epitaxial wafer on Si substrates includes Si Nucleating layer 210, electron transfer layer 202, radiating layer 203 on substrate 201 and Si substrates and hole transmission layer 204.Due to The III/VI group-III nitrides such as direct epitaxial growth of gallium nitride GaN are difficult on Si substrates 201, and nucleating layer is formd on Si substrates 210.The example of nucleating layer is aluminium nitride AlN.Certainly, other materials for being suitable for Si substrate nucleating layers can also use. Further, it between nucleating layer 210 and electron transfer layer 202 may include one or more buffer layers or insert layer.

As shown, electron transfer layer 202, radiating layer 203 and hole transmission layer 204 form the light emitting structure of LED.It lifts For example, electron transfer layer 202 includes n type gallium nitride N-GaN, and radiating layer includes the polynary of gallium nitride GaN, indium nitride InN etc. Compound InGaN, and hole transmission layer 204 includes P type gallium nitride P-GaN.It will be appreciated by those skilled in the art that above only Only it is the LED light emitting structures for illustratively illustrating may be applied to, other existing light emitting structures similarly may be used in this field With application.One embodiment according to the present utility model, epitaxial wafer can be formed by fabrication steps before, can also It is to purchase from other suppliers.

Include reflecting layer 205 and reflecting layer protective layer 206 on LED light emitting structures as described in Fig. 2A.Reflecting layer 205 Can be metal material with high reflectivity, including but not limited to silver, aluminium, nickel etc..Alternatively, reflecting layer 205 can be transparent The composite construction of conductive material such as ITO and highly reflective material, it is transparent conductive material to be contacted with hole transmission layer 204, It is highly reflective material above.Light loss can be reduced in this way, improve light extraction efficiency.Reflecting layer protective layer 206 is in reflecting layer On 205, shield to reflecting layer 205.

Since Si substrates 201 have very strong absorbability for the light of short wavelength, in order to increase light extraction efficiency, the prior art In generally by the way of removing original Si substrates.Specifically, as shown in Figure 2 B, the structure of Fig. 2A passes through bonding material 211 It is bonded on the Si substrates 212 of another conduction.Conductive Si substrates 212 may be used as subsequent circuit connection.Such as Fig. 2 C institutes Show, after the structure of Fig. 2 B is inverted, original Si substrates 201 and nucleating layer 210 etc. are removed, and expose electron transfer layer 202.Removal Si substrates may be used the modes such as mechanical lapping or dry or wet etching and carry out.Next, as shown in Figure 2 D, Extraction structure is made on the electron transport layer, and further makes N- electrodes 207.Finally protective layer is set on the electron transport layer 208 etc., complete the making of LED chip.

Above production process needs to use two panels silicon chip, and which includes the complicated streams such as wafer bonding, thinned, removal Journey increases production cost, also reduces yield.But even so, what above-mentioned technique was made is also LED chip, To apply on circuit boards, it is also necessary to be produced with reflector, welding electrode, epoxy resin or silica gel by packaging technology Protection, fluorescent material, the isostructural LED packaging bodies of lens.This all makes the cost of LED component further increase.

Fig. 3 A- Fig. 3 K are the schematic diagrames that one embodiment according to the present utility model makes LED component.With Fig. 2A-Fig. 2 D Embodiment is compared, and the epitaxial layer and light emitting structure of Fig. 3 A- Fig. 3 K embodiments are same or like, and which is not described herein again.

As shown in Figure 3A, P- electrode/reflective layers 311 are set on hole transmission layer 304.One according to the present utility model Embodiment, reflecting layer, which can be P- electrodes or reflecting layer, can be arranged on P- electrodes.Specifically, in some embodiments In, the material of P- electrodes includes the metal material of high reflectance, including but not limited to silver, aluminium, nickel etc..It is according to the present utility model Another embodiment includes multilayered structure or labyrinth on hole transmission layer, wherein the part contacted with hole transmission layer is P-type ohmic contact material.In some embodiments, P-type ohmic contact material can be transparent material.High reflectance conduction material Material can be arranged on transparent P-type ohmic contact material.In further embodiments, P-type ohmic contact material is transparent Transparent insulating layer (such as silica) can be arranged in ohmic contact material thereon, and reflective metals material is arranged on transparent insulating layer again Material.Reflective metal material can be connected with P- electrodes.In addition, P- electrodes other than comprising ohmic contact material, can also include Other functional conductive materials are set in P- electrode uppers point or whole region, such as coordinating with paster technique or Flip Chip Bond Technique Thicker conductive layer.For the present embodiment, P- electrodes are non-light-emitting surface.P- electrode is set with high reflection spy to Property, the absorption of photon is advantageously reduced, light extraction efficiency is improved.

Further, protective layer 312 is set in P- electrode/reflective layers 311.Protective layer 312 can be to the structure under it It plays a protective role.The material of protective layer 312 can be the passivating materials such as silica.In following figure 3 B- Fig. 3 K, P- electrodes/ Reflecting layer 311 is referred to as reflecting layer.

As shown in Figure 3B, structure shown in Fig. 3 A is overturn, then part removes Si substrates 301.It specifically may be used dry Method or wet etching mode part remove Si substrates.Si substrates are removed by part, are exposed under Si substrates including but not limited to One of nucleating layer 310, buffer layer, insert layer and electron transfer layer 302.In fact, after Si substrates remove, nucleating layer delays Light can't be absorbed by rushing layer, insert layer etc., therefore can select to retain these layers；Or selectively remove in these layers one Person or more persons.One embodiment according to the present utility model, exposed portion electron transfer layer 302, to facilitate subsequent processing procedure.By The thickness for not being etched part in Si substrates is still larger, makes, in packages and devices application in subsequent LED, is not etched Si substrates the effects that remaining to play support and frame.Radiating layer 303 is set to electron transfer layer 302 and hole transmission layer Between 304.

As shown in Figure 3 C, etched formed forms N- electrodes in Si substrates 301 on the electron transfer layer 302 in cavity 313.After Si substrates are removed, N- electrodes 313 are formed on the part electron transfer layer for being exposed out.

As shown in Figure 3D, the etched side for forming cavity forms reflecting layer 314 in Si substrates 301.Si substrates as a result, Reflected light is absorbed light by the side in middle cavity.Further, it during part removes Si substrates, can control To form inclined Si side of substrate.After sputter high reflecting metal, the cavity of Si substrates forms reflector.According to this reality It can be selected with the angle of inclination of novel one embodiment, side.In other words, the angle of reflector is can to select 's.

As shown in FIGURE 3 E, transparent filling material 315 is filled in the cavity of Si substrates.A reality according to the present utility model Example is applied, transparent filling material can be the combination of high transparency silica gel, transparent resin or the two.Further, in transparent filling Light transformational substance such as fluorescent powder can be increased in material, to realize the conversion of outgoing wavelength.Transparent filling material pair as a result, Also the function of outgoing wavelength convert is completed while LED light emitting structures are protected.Alternatively, according to the present utility model another A kind of embodiment does not include light transformational substance in transparent filling material.On the transparent material of filling and/or the substrate of reservation Fang Zengjia light transformational substance layers realize the conversion of outgoing wavelength.

As illustrated in Figure 3 F, it removes and is partially filled with material, expose N- electrodes to the open air.As shown in Figure 3 G, conductive material is deposited or sputters, Form the conductive path 316 of connection N- electrodes.The width of conductive path can be narrow.The material of conductive path can be transparent , can also be opaque.One embodiment according to the present utility model, conductive path extend at least partially into the Si of reservation Substrate.

As shown in figure 3h, in the Si substrate area scribings of reservation, LED component is detached.It is drawn in the Si substrate areas of reservation Piece cuts substrate, can isolate each LED component.It is noted that the light emitting structure in the LED component isolated is The transparent material being filled is closed, and LED component has had good mechanical performance.It is therefore contemplated that isolating LED component be encapsulated or at least partly encapsulate.

Need not additionally it be made using the Si substrates of silicon epitaxial wafer as support substrate in the LED component of the utility model as a result, Use support substrate.Since Si substrates are only partially removed, remaining Si substrates play the role of support and frame well, During the subsequent encapsulation step of LED component and use important branch is played for only having several microns of thick nitride epitaxial layers Support acts on.Further, the utility model avoids the technological process of the complexity such as bonding chip, to considerably reduce LED Cost, be very beneficial for the popularization and use of LED.

Another embodiment according to the present utility model, Fig. 3 D the step of after, and be not filled with transparent filling material.Such as Shown in Fig. 3 I, conductive path 316 is formed on the N- electrodes of formation.Conductive path extends on the Si substrates of reservation.

As shown in figure 3j, transparent filling material 315 is filled in the cavity of Si substrates.As shown in Fig. 3 K, in the Si of reservation Substrate area scribing detaches LED component.Similar with Fig. 3 H, the Si substrates for equally obtaining the silicon epitaxial wafer of the utility model are made For the LED component of support substrate.

With reference to figure 3H and Fig. 3 K, the LED component of the utility model is the LED component of vertical structure, has excellent radiating effect Energy.Also, the encapsulation of the making and light emitting structure of reflector is achieved that in chip technology, after being sliced and cutting substrate Available LED component can be directly obtained.Moreover, because do not include additional encapsulation step, the volume of LED component completely by The area of corresponding Si substrates determines that the volume of LED devices is reduced.The present embodiment by by chip technology and encapsulation work Skill dexterously merges, and while simplifying packaging technology, can also reduce the volume of LED component, improve power density.Both it was not required to Scribing and cutting are carried out to Si substrates before encapsulation, isolate individual LED chip；In chip and packaging technology also not It needs to carry out substrate removal or substrate bonding, additional support substrate is not needed, it is possible thereby to so that the LED of the present embodiment yet Device cost is greatly lowered.

Fig. 4 A- Fig. 4 D show the LED component schematic diagram according to the utility model embodiment；Wherein, Fig. 4 A show root According to the vertical view of the light-emitting surface of the LED component of one embodiment of the utility model；Fig. 4 B show the LED devices of the embodiment The vertical view of the non-light-emitting surface of part.Fig. 4 C show the light-emitting surface of the LED component according to the utility model another embodiment Vertical view；Fig. 4 D show the vertical view of the non-light-emitting surface of the LED devices of the embodiment.

As shown, LED component includes the Si substrate areas 401 retained and one or more P- electrodes 402 and N- electrodes 403.P- electrodes 402 are arranged on the hole transport layer.N- electrodes are arranged on the electron transport layer.As shown, the substrate retained Region 401 surround one or more light emitting structure regions and by each light emitting structure region separately.Further, the Si of reservation Substrate extends beyond the enough distances in one or more light emitting structure regions to prevent light from the edge leakage in light emitting structure region. For example, the width of the Si substrates of reservation is at least 10 μm, 20 μm, 50 μm, 100 μm or 1000 μm.

As shown in figs. 4 a and 4 c, the geometric center in light emitting structure region 410 is arranged in N- electrodes, to be conducive to point of electric current Cloth, so as to improve the heat-sinking capability and service life of device.Further, multiple N- electrodes pass through a plurality of conductive path 404 are connected respectively to the regions N- 405 for retaining Si substrates.

Include P- pads 408 in the non-smooth side of LED component as shown in Fig. 4 B and Fig. 4 D.P- pads 408 are electrically connected to one A or multiple P- electrodes 402 can be shared by multiple light emitting structures.Specifically, the guarantor except P- electrode/reflective layers Sheath is insulating layer.Include being open to expose P- electrode/reflective layers on insulating layer.P- electrode/reflective layers are connect by P- ohm Contact layer is electrically connected with P- pads 408.The presence of insulating layer (protective layer) can prevent pad not by P- ohmic contact layers and sky Cave transport layer connection avoids shining caused by electrical pumping and efficiency is lost.Further, P- pads 408 and the Si substrates retained It is connected with multiple light emitting structures so that entire support construction is more stable.

One embodiment according to the present utility model, as illustrated in figures 4 a and 4b, N- pads 407 and P- pads 408 can be all Positioned at the non-light emission side of LED component.As shown, the regions N- 405 include electric connection structure 406.Electric structure 406 and conductive path 404 are electrically connected and are further connected electrically to the N- pads 407 of the other side of LED component.For example, electric connection structure 406 can Think the through-hole through the conductive structure for retaining Si substrates, such as inner surface jet-plating metallization.Due to N- pads 407 and P- pads 408 are located at the same side, and sealing technique by Reflow Soldering or surface can be secured and electrically connected to device on pcb board, can Veritably integrate encapsulation flow.

One embodiment according to the present utility model, as shown in figures 4 c and 4d, N- pads 407 and P- pads 408 can positions In the both sides of LED component.Include N- pads 407 on the light-emitting surface of LED component, the regions N- 405.N- pads 407 are by leading Power path 404 is electrically connected to one or more N- electrodes.Include P- pads 408 in the non-light-emitting surface of LED component.N- pads 407 It although also needs to be electrically connected with package support using methods such as bonding wires in the both sides of LED component with P- pads, but uses this The LED component cost that mode encapsulates is relatively low, also saves chip area.

The LED component of the utility model can form the larger P- pads of area in non-light emission side as a result, after not only improving Continuous electrical connection is also beneficial to the stabilization of LED component self structure.The substrate and pad that the LED component of the utility model retains Be connected, so as to be significantly increased the utility model LED devices mechanical strength.For subsequent electrical connection, pad Thickness be larger.In the LED component of the utility model, the larger part of thickness is exactly the substrate and pad retained, The thickness of his part all very littles.In the LED component of the utility model, the substrate of reservation is obtained to be connect with pad, i.e., from Vertical Square Look up reservation substrate above there are pads.Such structure is conducive to external force being transmitted to entire LED devices in stress On, so that entire device architecture is more firm.

One embodiment according to the present utility model, pad (including N- pads and/or P- pads) can be multilayered structure, Such as including ohmic contact layer and be conducive to the metal structure welded.It will be appreciated by those skilled in the art that the implementation of Fig. 1-Fig. 3 Can also include pad in example.Optionally, P- electrodes and N- electrodes can also use other shapes or layout.Fig. 4 A- figures Shape in 4D is only the content of exemplary.

Fig. 5 is the schematic diagram of the manufacturing method of the LED component of one embodiment according to the present utility model.As shown in figure 5, The manufacturing method 500 of LED component includes the following steps：In step 510, in the nitride epitaxial on piece setting P- electricity of Si substrates Pole/reflecting layer；The nitride epitaxial piece of wherein Si substrates includes Si substrates, nucleating layer, electron transfer layer, radiating layer and hole Transport layer.The material of one embodiment according to the present utility model, P- electrodes includes the metal material of high reflectance, including but not It is limited to silver, aluminium, nickel etc..Another embodiment according to the present utility model, P- electrodes be include transparent conductive material such as ITO and height The composite construction of reflective materials, wherein it is transparent conductive material to be contacted with hole transmission layer, it is in the above high reflectance Material.

In step 520, part removes Si substrates.One embodiment according to the present utility model, LED light emitting structures region Si substrates are removed in this step or major part is removed.Further, in step 520, the one of electron transfer layer is exposed to the open air Part.

In step 530, the N- electrodes being electrically connected with electron transfer layer are formed.In view of the LED of the utility model is vertical Size and the position of N- electrodes is arranged, to ensure best heat dissipation effect in structure, can be according to vertical structure LED the characteristics of.

In step 540, reflecting layer is formed in the side in the cavity of Si substrates.One embodiment according to the present utility model, Reflecting layer is formed using the method for sputter high reflecting metal.High reflecting metal may include silver, aluminium, nickel etc..It is new according to this practicality The side of one embodiment of type, the cavity of Si substrates is inclined, applies the cavity formation reflector of Si substrates behind reflecting layer.

In step 550, transparent material is filled in the cavity of Si substrates and forms the conductive path being electrically connected with N- electrodes； Or it forms the conductive path being electrically connected with N- electrodes and fills transparent material in the cavity of Si substrates.That wherein fills is transparent Material includes light transformational substance, such as fluorescent powder etc..Further, the conductive path being electrically connected with N- electrodes is at least partly Extend to the Si substrates of reservation.

In step 560, optical device is made above the transparent material of filling.It will be appreciated by those skilled in the art that step Rapid 560 be optional.

In step 570, scribing simultaneously cuts substrate, forms independent LED component.

Fig. 6 is the LED component packaging method of one embodiment according to the present utility model.As shown, packaging method 600 Include the following steps：In step 610, substrate or pcb board are provided；Wherein substrate or pcb board include wiring and multiple contacts. In step 620, by the utility model LED devices as described above be installed in a manner of flip-chip or patch substrate or On pcb board.

The utility model proposes a kind of completely new LED structure, it is suitable for making LED on silicon Si substrates, and have Very high power.Although the LED structure of the utility model is equally applicable to the materials such as other substrates, such as SiC silicon carbide.

Above-described embodiment is only for illustration of the utility model, and is not limitations of the present invention, related technology The those of ordinary skill in field can also make a variety of changes and modification in the case where not departing from the scope of the utility model, because This, all equivalent technical solutions should also belong to scope disclosed by the utility model.

Claims (10)

1. a kind of LED component, which is characterized in that including：

Substrate；

The electron transfer layer set gradually, radiating layer and hole transmission layer above substrate, wherein substrate includes transparent filling Material；

P- electrode/reflective layers, setting is on the hole transport layer；And

N- electrodes are arranged between electron transfer layer and transparent filling material.

2. LED component according to claim 1, which is characterized in that wherein form reflector in substrate.

3. LED component according to claim 1, which is characterized in that further comprise the conductive path being electrically connected with N- electrodes Diameter, wherein conductive path extend to the substrate of reservation.

4. LED component according to claim 1, which is characterized in that wherein conductive path be located at electron transfer layer with it is transparent Between packing material.

5. LED component according to claim 1, which is characterized in that wherein conductive path is located on transparent filling material.

6. LED component according to claim 1, which is characterized in that the substrate wherein retained is located at around LED component, And it is enough to prevent light from revealing.

7. LED component according to claim 1, which is characterized in that it includes light conversion material wherein to fill transparent material.

8. LED component according to claim 1, which is characterized in that P- electrode/reflective layers are high reflecting metal layer or P- Electrode/reflective layer includes transparent ohmic contact layer and high reflecting metal layer.

9. LED component according to claim 1, which is characterized in that include N pads and the P weldering positioned at homonymy or opposite side Disk, wherein P pads and the substrate of reservation form solid support structure.

10. a kind of lighting device, including it is one or more such as LED component any in claim 1-9.