CN106159073B

CN106159073B - Light emitting element and method for manufacturing the same

Info

Publication number: CN106159073B
Application number: CN201510195154.5A
Authority: CN
Inventors: 黄信雄; 简振伟; 林筱雨; 富振华
Original assignee: Epistar Corp
Current assignee: Epistar Corp
Priority date: 2015-04-23
Filing date: 2015-04-23
Publication date: 2020-06-16
Anticipated expiration: 2035-04-23
Also published as: CN106159073A

Abstract

The invention discloses a light-emitting element and a manufacturing method thereof, the light-emitting element comprises: a conductive support substrate including a first surface, a second surface opposite to the first surface, a first member forming a conductive channel, a second member, an annular opening defined by the first member and the second member, the annular opening extending from the first surface to the second surface, and an insulating material filling the annular opening; a light-emitting laminated structure, which comprises a semiconductor laminated layer and a first conducting layer, wherein the semiconductor laminated layer is provided with a first semiconductor layer, a second semiconductor layer and an active layer positioned between the first semiconductor layer and the second semiconductor layer; and a conductive bonding layer for bonding the light-emitting laminated structure to the first surface.

Description

Light emitting element and method for manufacturing the same

Technical Field

The present invention relates to a light emitting device and a method for manufacturing the same, and more particularly, to a light emitting device with high luminance.

Background

Light-emitting diodes (LEDs) are optoelectronic devices composed of P-type semiconductors and N-type semiconductors, emit light by combining carriers at the P-N junction, have advantages of small size, low power consumption, long service life, and fast response speed, and are widely used in optical displays, traffic lights, data storage devices, communication devices, lighting devices, and medical devices. The existing light emitting diode structure has a horizontal structure and a vertical structure. In the horizontal-type structure and vertical-type structure light emitting diodes, the front surface (light emitting surface) of the chip is shielded by an electrode, so that light emission is limited, and therefore, a structure is developed in which the chip is inverted, the electrode faces downward, and light is emitted through the sapphire substrate surface, that is, an inverted structure. The light emitting diode with the inverted structure can be directly contacted with the heat dissipation structure in the packaging structure through the electrode or the lug, so that the heat dissipation effect is improved, and the manufacturing processes of routing, lead supports and the like can be omitted.

Disclosure of Invention

To achieve the above object, the present invention provides a light emitting device, comprising: a conductive support substrate including a first surface, a second surface opposite to the first surface, a first member forming a conductive channel, a second member, an annular opening defined by the first member and the second member, the annular opening extending from the first surface to the second surface, and an insulating material filling the annular opening; a light-emitting laminated structure, which comprises a semiconductor laminated layer and a first conducting layer, wherein the semiconductor laminated layer is provided with a first semiconductor layer, a second semiconductor layer and an active layer positioned between the first semiconductor layer and the second semiconductor layer; and a conductive bonding layer for bonding the light-emitting laminated structure to the first surface.

The invention provides a manufacturing method of a light-emitting element, comprising the following steps: providing a light-emitting laminated structure with a first semiconductor layer, an active layer and a second semiconductor layer on a growth substrate; forming a first bonding layer on the light-emitting laminated structure; providing a substrate with a first surface and a second surface opposite to the first surface, and etching the first surface of the substrate to a certain depth to form an annular closed groove; filling an insulating material in the annular closed groove; bonding the light-emitting laminated structure and the substrate by using a bonding first bonding layer; thinning the substrate from the second surface until the insulating material is exposed to form a third surface; and forming an electrode pad on the third surface.

Drawings

Fig. 1 is a cross-sectional structural view of a light-emitting element according to a first embodiment of the present invention;

FIGS. 2A to 2D, 3A to 3C and 4A to 4D are schematic views illustrating a manufacturing method according to a first embodiment of the present invention;

fig. 5A to 5C are a top view, a structural view along a cross section AA 'and a structural view along a cross section BB' of a light-emitting element according to a second embodiment of the present invention, respectively;

FIG. 6 is a cross-sectional view of a light-emitting element according to a third embodiment of the present invention;

fig. 7 is a cross-sectional structural view of a light-emitting element according to a fourth embodiment of the present invention.

Description of the symbols

1. 2, 3, 4: light emitting element

5. 6, 7, 8: light emitting laminated structure

10. 12: supporting substrate

100. 200: a first conductive path

300: second conductive path

101. 102, 102': surface of

120: annular opening

120 a: annular closed groove

60. 601, 602, 603: insulating layer

14: growth substrate

18a, 18 b: electrode pad

20: semiconductor stack

22: first semiconductor layer

24: active layer

26: a second semiconductor layer

30: metal contact layer

32: opening of the container

36: insulating material

38: through hole

40. 40': metal conductive layer

401. 402, a step of: first and second conductive layers

403: electrode extension layer

46. 46': conductive bonding layer

50: protective layer

52: coarsening structure

308: exposed region

Detailed Description

Embodiments of the invention will be described in detail and illustrated in the accompanying drawings, wherein like or similar elements may be referred to by like numerals throughout the several views and the description.

Fig. 1 is a cross-sectional structural view of a light-emitting element 1 according to a first embodiment of the present invention. As shown in fig. 1, the light emitting device 1 has a light emitting laminated structure 5 bonded and fixed on a supporting substrate 10 by a conductive bonding layer 46'. The light emitting laminated structure 5, such as a light emitting diode laminated structure or a laser laminated structure, includes a semiconductor laminated layer 20 including a first semiconductor layer 22, a second semiconductor layer 26, and an active layer 24 disposed between the first semiconductor layer 22 and the second semiconductor layer 26. First semiconductor layer 2The second semiconductor layer 26 and the active layer 24 are, for example, a cladding layer (cladding layer) capable of providing carriers or a confinement layer (confinement layer) capable of confining carriers, and electrons and holes are combined to emit light. The materials of the first semiconductor layer 22, the active layer 24, and the second semiconductor layer 26 include one or more elements selected from semiconductor compounds consisting of gallium (Ga), aluminum (Al), indium (In), phosphorus (P), nitrogen (N), zinc (Zn), cadmium (Cd), and selenium (Se), such as Al_xIn_yGa_(1-x-y)N or Al_xIn_yGa_(1-x-y)P, wherein 0 ≦ x, y ≦ 1; (x + y) ≦ 1. Depending on the material of the active layer 24, the semiconductor stack 20 may emit red light with a wavelength between 610nm and 650nm, green light with a wavelength between 530nm and 570nm, blue light with a wavelength between 450nm and 490nm, or near ultraviolet light (near UV) or ultraviolet light (UV) with a wavelength less than 400nm, including UVA with a wavelength between 400nm and 315nm, UVB with a wavelength between 315nm and 280nm, and UVC with a wavelength below 280 nm. The structure of the active layer 24 may be a single heterostructure, a double-sided double heterostructure, a multiple quantum well, or a quantum dot. The first semiconductor layer 22 and the second semiconductor layer 26 are electrically different, in this embodiment, the first semiconductor layer 22 is doped with p-type impurities to be a p-type semiconductor layer, and the second semiconductor layer 26 is doped with n-type impurities to be an n-type semiconductor layer. The first semiconductor layer 22 has a current spreading layer (not shown), a metal contact layer 30 and a selectively formed reflective layer (not shown) on its surface. A first conductive layer 401 is disposed on the surface of the metal contact layer 30, electrically connected to the first semiconductor layer 22, and extends to the supporting substrate 10 in the vertical direction. A plurality of vias 38 are formed in the semiconductor stack 20, the vias 38 are formed by removing the first semiconductor layer 22 and the active layer 24 to expose a portion of the second semiconductor layer 26, and a plurality of second conductive layers 402 are disposed in the vias 38 and connected to the second semiconductor layer 26 exposed at the bottom of the vias 38. The number and arrangement of the through holes 38 and the second conductive layer 402 can be designed differently according to the magnitude of the injected current and the purpose of current dispersion. A roughened structure 52 may be selectively formed on the surface of the second semiconductor layer 26 opposite to the active layer 24 to reduce total reflection and improve light extraction efficiency. First conductive layer 401 and second conductive layerThe electrical layer 402 is preferably a metallic material including, but not limited to, gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn), alloys thereof, or stacked combinations thereof. The metal contact layer 30 has an insulating layer 60 thereon, and the insulating layer 60 extends to cover the sidewalls of the semiconductor stack 20 and a portion of the bottom of the via hole in the plurality of via holes 38 and is disposed between the first conductive layer 401 and the second conductive layer 402 to ensure insulation between the first conductive layer 401 and the second conductive layer 402.

The supporting substrate 10 has a first surface 101 and a second surface 102 opposite to the first surface 101. The supporting substrate 10 has an annular opening 120 extending from the first surface 101 to the second surface 102, which means that the opening is annular when viewed from the top of the first surface 101 or the second surface 102. The ring shape may be a circular ring or a ring shape of other shapes, such as a square ring. Surrounded by the annular opening 120 is a portion of the support substrate 10, and the annular opening is etched down from the first surface 101 or the second surface 102 of the support substrate 10, leaving the support substrate 10 in the middle of the annular opening 120. The annular opening 120 is filled with an insulating material 36, when the supporting substrate 10 is made of a conductive material, the supporting substrate 10 surrounded by the annular opening 120 can form a conductive channel 100, and the insulating material 36 can electrically insulate the conductive channel 100 from the supporting substrate 10. The conductive material of the support substrate 10 includes, but is not limited to, gallium phosphide (GaP), silicon (Si), molybdenum (Mo), copper (Cu), other Metal materials, Metal alloys, or Metal-based printed circuit boards (MCPCBs). The first surface 101 of the supporting substrate 10 has a conductive bonding layer 46' for bonding the light emitting stacked structure 5, and the first conductive layer 401 and the second conductive layer 402 of the light emitting stacked structure 5 are electrically connected to the conductive via 100 and the supporting substrate 10, respectively. The conductive bonding layer 46' is preferably a metallic material including, but not limited to, copper, gold, tin, other metals, or metal alloy materials. The second surface 102 of the supporting substrate 10 is provided with a first electrode pad 18a and a second electrode pad 18b for electrically connecting with an external power source and/or a circuit element, and also has a heat dissipation function. The first electrode pad 18a is disposed on the second surface 102 of the conductive via 100, and the second electrode pad 18b is disposed on the second surface 102 outside the annular opening 120. When the supporting substrate 10 is made of a conductive material and an external voltage is applied to the light emitting device 1, the first electrode pad 18a on the second surface 102 can be electrically connected to the first semiconductor layer 22 through the conductive via 100, the first conductive layer 401 and the metal contact layer 30; similarly, the second electrode pad 18b can be electrically connected to the second semiconductor layer 26 through the supporting substrate 10, the conductive bonding layer 46', and the plurality of second conductive layers 402. The insulating material 36 in the annular opening 120 ensures electrical insulation between the first electrode pad 18a and the second electrode pad 18 b. The light emitting device 1 further has a protection layer 50 covering the surface of the second semiconductor layer 26 and the sidewall of the light emitting stacked structure 5 to protect the semiconductor stacked layer 20 and the light emitting stacked structure 5.

In the present embodiment, the current can be uniformly dispersed by the arrangement of the plurality of through holes 38 and the plurality of second conductive layers 402; since the

electrode pads

18a and 18b are disposed on the second surface 102 of the supporting substrate 10, the bonding process between the

electrode pads

18a and 18b and external electronic components is simplified, and the heat dissipation of the light emitting element 1 is facilitated. The light-emitting surface of the light-emitting device 1 (i.e., the surface of the second semiconductor layer 26 opposite to the supporting substrate 10) is not shielded by any electrode structure, so that the overall light-emitting efficiency of the light-emitting device 1 can be improved.

Fig. 2A to 2C, fig. 3A to 3C, and fig. 4A to 4D illustrate a manufacturing method according to a first embodiment of the present invention. Fig. 2A to 2C illustrate a method for manufacturing the light emitting stacked structure 5. As shown in fig. 2A, a semiconductor stack 20, which includes a second semiconductor layer 26, an active layer 24 and a first semiconductor layer 22 sequentially, is formed on a growth substrate 14 by an epitaxial process, and a buffer layer (not shown) may also be formed on the growth substrate 14 before the second semiconductor layer 26 is formed to reduce lattice defects formed by a subsequent epitaxial process. The material of the growth substrate 14 includes, but is not limited to, sapphire (sapphire), magnesium aluminum oxide (MgAl)₂O₄) Lithium aluminate (LiAlO)₂) Lithium gallate (LiGaO)₂) Gallium oxide (Ga)₂O₃) Magnesium oxide (MgO), gallium nitride (GaN), gallium arsenide (GaAs), silicon carbide (SiC), silicon (Si), or the like. In addition, the surface of the growth substrate 14 to be subjected to epitaxy may have a patterned structure. Then, in the first half-leadThe surface of the body layer 22 is etched to remove portions of the first semiconductor layer 22 and the active layer 24, exposing the second semiconductor layer 26 and forming a plurality of vias 38. Next, as shown in fig. 2B, after forming a current diffusion layer (not shown), a metal contact layer 30 and/or a selective reflection layer (not shown) on the surface of the first semiconductor layer 22, an insulating layer 601 is formed on the metal contact layer 30 and on the sidewalls of the plurality of through holes 38. The insulating layer 601 covers the sidewalls of the semiconductor stack 20 in the plurality of vias 38, a portion of the bottom within the vias 38, and the metal contact layer 30. Part of the metal contact layer 30 is not covered by the insulating layer 601, and an opening 32 is formed. Next, a metal layer 40' is formed directly above the opening 32, in the plurality of vias 38 and above the insulating layer 601 by a metal plating process. Next, as shown in fig. 2C, the metal layer 40' is removed from the position right above the opening 32 by a yellow light process, so as to form a conductive layer 401, a second conductive layer 402 and the metal conductive layer 40. Next, as shown in fig. 2D, an insulating layer 602 is further formed between the first conductive layer 401 and the second conductive layer 402. The metal conductive layer 40 is used as a bonding layer in a subsequent manufacturing process, the metal layer in the opening 32 and the region above the opening is a first conductive layer 401, and the metal layer in the through holes 38 is a second conductive layer 402. In the manufacturing method of the present embodiment, the first conductive layer 401, the second conductive layer 402 and the metal conductive layer 40 are made of the same material, but the embodiment of the present invention is not limited thereto. For example, in another embodiment, the first conductive layer 401 and the second conductive layer 402 can be formed in the opening 32 and the plurality of through holes 38 by using a metal material, which can form an ohmic contact with the second semiconductor layer 26, and then the metal conductive layer 40 is formed by using another metal material over the first conductive layer 401, the second conductive layer 402 and the insulating layer 601. The metal conductive layer 40 will serve as a bonding layer in subsequent fabrication processes, and therefore, a different metal may be selected from the first/second conductive layers, including but not limited to gold, other metal stacks, or other alloys.

Fig. 3A to 3C illustrate a method of manufacturing a support substrate 10 according to a first embodiment of the present invention. As shown in FIG. 3A, a ring with a depth of about 200 μm is formed on a first surface 101 of a supporting substrate 10 by an etching processThe annular closed trench 120a, i.e., the trench is viewed from the top of the first surface 101 of the support substrate 10 as a closed ring, which may be a circular ring or other ring, and the support substrate 10 in the middle of the annular closed trench 120a remains the support substrate 10 that is not etched away, which will be used to form the conductive via 100 in the subsequent manufacturing process. Next, as shown in fig. 3B, an insulating material 36 is formed on the first surface 101 and in the annular closed trench 120a, so that the insulating material 36 fills the annular closed trench 120 a. In the present embodiment, the insulating material 36 may be formed on the first surface 101 and in the annular closed trench 120a by spin coating. The insulating material 36 may be Polyimide (PI), benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), magnesium oxide (MgO), Su8, Epoxy (Epoxy), Acrylic (Acrylic Resin), cyclic olefin Polymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), Polycarbonate (PC), Polyetherimide (polyethylimide), Fluorocarbon Polymer (Fluorocarbon Polymer), Glass (Glass), aluminum oxide (Al)₂O₃) Silicon oxide (SiO)_x) Titanium oxide (TiO)₂) Tantalum oxide (Ta)₂O₅) Silicon nitride (SiN)_x) Spin-on glass (SOG), Tetraethoxysilane (TEOS), magnesium fluoride (MgF)₂) Or combinations of the above. Next, as shown in fig. 3C, the insulating material 36 is remained at the corresponding position of the annular closed trench 120a, the insulating material 36 inside and outside the ring shape of the annular closed trench 120a is removed, and a metal bonding layer 46 is formed on the first surface 101 of the supporting substrate 10 after the insulating material 36 is removed. If there is no supporting substrate 10 remaining part, but a circular opening is formed in the supporting substrate, and the circular opening is filled with an insulating material, this structure is easy to generate bubbles when the circular opening is filled with a glue material, so that the difficulty of the manufacturing process is increased, and if the circular opening is too large, there is a problem of insufficient support. In contrast to the above-mentioned method, the present embodiment retains a portion of the substrate 100 to form the annular closed trench 120a, the width of the annular closed trench 120a is smaller than that of the circular opening, and the narrower annular trench 120a is filled with the insulating material by spin coating, so as to achieve the preferable coverage and avoid forming an insulating material in the via holeThe air bubbles generated during the production of the material cause the problem of poor insulation property.

Fig. 4A to 4D illustrate a method for forming a light emitting device 1 by bonding a light emitting laminated structure 5 to a supporting substrate 10 according to a first embodiment of the present invention. As shown in fig. 4A, the light emitting stacked structure 5 is inverted, and the Metal conductive layer 40 on the surface thereof is used as a Bonding layer with the first conductive layer 401 and is bonded with the Metal Bonding layer 46 on the support substrate 10, in this embodiment, a Wafer Bonding (Wafer Bonding) method, such as Metal-Metal Bonding (Metal-Metal Bonding), can be adopted. In the bonding process, the first conductive layer 401 and the supporting substrate 10 in the annular closed trench 120a need to be aligned to achieve electrical conduction. Fig. 4B is a plan view of the bonding surface of the support substrate 10 and the light-emitting stacked structure 5 in this step. After bonding, the insulating layer 602 is in contact with the insulating layer 36 and the metallic conductive layer 40 is bonded to the metallic bonding layer 46 to form a conductive bonding layer 46'. Next, as shown in fig. 4C, the growth substrate 14 is removed, for example, by a Laser Lift-Off (Laser Lift-Off) process. Next, as shown in fig. 4D, the semiconductor stacked layer 20 is separated into a plurality of light emitting stacked layer structures 5, and a roughened structure 52 may be selectively formed on the surface of the light emitting stacked layer structure 5 opposite to the support substrate 10, and a protective layer 50 may be selectively formed on the surface and the sidewall of the light emitting stacked layer structure 5. Next, the support substrate 10 is thinned from the second surface 102 'opposite to the bonding surface, for example, by grinding, so that the second surface 102' of the support substrate 10 is thinned to expose the annular closed groove 120a, so as to form a third surface 102, and the exposed annular closed groove 120a forms the annular opening 120. And a first electrode pad 18a is formed on the third surface 102 of the conductive via 100 and a second electrode pad 18b is formed on the third surface 102 of the support substrate 10 outside the annular closed trench opening 120. Finally, the supporting substrate 10 corresponding to each light-emitting laminated structure 5 is cut by another method such as laser or diamond knife to form a plurality of light-emitting elements 1 as shown in fig. 1. In the manufacturing method of the present embodiment, a wavelength conversion layer (not shown), such as a phosphor or a quantum dot material, may also be selectively formed on the surface of the light emitting stacked structure 5.

In the present embodiment and the manufacturing method thereof, the conductive via 100 is formed by etching the annular closed trench 120a and retaining the middle support substrate 10, and no additional metal layer is required to be filled as the conductive via, thereby simplifying the manufacturing process. In addition, the annular sealing trench 120a is filled with the insulating material 36, so that the coverage of the insulating material can be increased, and the insulation between the conductive via 100 and the supporting substrate 10 can be ensured. With the conductive material as the supporting substrate, the current of the light-emitting stacked structure 5 can be conducted to the first/second electrode pads 18a/18b through the conductive bonding layer 46', the supporting substrate 10 and the conductive vias 100, and then connected to an external device or a power source, without any electrode shielding on the light-emitting surface of the light-emitting device 1. The current distribution in the semiconductor stack can be achieved by the plurality of vias 38 and the plurality of second conductive layers 402, thereby reducing forward bias (Vf) of the light emitting stack 5 and improving light emitting efficiency.

Fig. 5A is a top view of a light emitting device 2 according to a second embodiment of the invention, and fig. 5B and 5C are structural diagrams taken along a cross section AA 'and a cross section BB', respectively, the top view being viewed from a light emitting surface of the light emitting device 2. As shown in fig. 5A to 5C, the light emitting device 2 has a light emitting laminated structure 6 bonded and fixed on a supporting substrate 10 by a conductive bonding layer 46'. The supporting substrate 10 is made of a conductive material and has an annular opening 120 filled with an insulating material 36 and a conductive via 100 located in the annular opening 120, and the second surface 102 of the conductive via 100 and the second surface of the supporting substrate 10 outside the annular opening 120 are respectively provided with a second electrode pad 18b and a first electrode pad 18 a. The structure and the manufacturing method of the supporting substrate 10 are the same as those of the first embodiment of the present invention, and therefore, the description thereof is omitted. The light emitting stack structure 6 includes a semiconductor stack 20 having an exposed region 308, wherein the exposed region 308 is formed by removing a portion of the first semiconductor layer 22 and the active layer 24 to expose a portion of the second semiconductor layer 26. The electrode extension layer 403 is disposed on the second semiconductor layer 26 in the exposed region 308, and the insulating layer 603 fills the exposed region 308 and covers the electrode extension layer 403 and the sidewall of the semiconductor stack 20 in the exposed region 308. The via 38 is located in the exposed region 308, passes through the insulating layer 603 in the vertical direction, and communicates to the electrode extension layer 403. As in the first embodiment, the through hole 38 is provided with a second conductive layer 402 connected to the electrode extension layer 403 for electrical conduction. The second conductive layer 402 in the via hole 38 extends in the vertical direction and is connected to the conductive via 100, electrically connected to the second electrode pad 18 b. The first semiconductor layer 22 also has a current spreading layer (not shown), a metal contact layer 30 and a reflective layer (not shown). The conductive bonding layer 46' is disposed on the metal contact layer 30 and is bonded to the support substrate 10. The current can be transmitted from the first electrode pad 18a to the first semiconductor layer 22 through the supporting substrate 10 and the conductive bonding layer 46', and uniformly dispersed in the semiconductor stacked layer 20 through the electrode extension layer 403, and then transmitted from the second semiconductor layer 26 to the second electrode pad 18b through the second conductive layer 402 and the conductive via 100. Therefore, the shape and configuration of the exposed region 308 and the electrode extension 403, and the arrangement of the via 38 and the second conductive layer 402 can be designed differently according to the current magnitude and the dispersion purpose. The bonding method of the light emitting laminated structure 6 and the supporting substrate 10 is the same as that of the first embodiment, and therefore, the description thereof is omitted.

Fig. 6 is a cross-sectional structural view of a light-emitting element 3 according to a third embodiment of the present invention. As shown in fig. 6, the light emitting device 3 has a light emitting laminated structure 7 bonded and fixed on a supporting substrate 12 by a conductive bonding layer 46'. The structure and the manufacturing method of the light emitting stacked structure 7 of this embodiment are the same as those of the first embodiment, and therefore, the description thereof is omitted. In the present embodiment, the supporting substrate 12 is made of a non-conductive material, including but not limited to aluminum nitride (AlN), diamond, sapphire (sapphire), glass, ceramic, and polymer composite (PMC). The supporting substrate 12 has a first surface 101 and a second surface 102 opposite to the first surface 101, and a first conductive via 200 and a second conductive via 300 are located in the supporting substrate, extending from the first surface 101 to the second surface 102 and penetrating through the supporting substrate 12. The first/second conductive vias 200/300 are formed by forming openings in the support substrate 12 and filling them with a conductive material (e.g., metal). The conductive bonding layer 46' is formed between the light emitting stacked structure 7 and the supporting substrate 12, and is connected to and covers the second conductive via 300 for bonding with the light emitting stacked structure 7, and similarly, as described in the manufacturing method of the first embodiment, the first conductive layer 401 and the first conductive via 200 need to be aligned during bonding. The first electrode pad 18a and the second electrode pad 18b are disposed on the second surface 102 and are respectively connected to the first conductive via 200 and the second conductive via 300. The first semiconductor layer 22 can be electrically connected to the first electrode pad 18a through the metal contact layer 30, the first conductive layer 401 and the first conductive via 200; similarly, the second semiconductor layer 26 can be electrically connected to the second electrode pad 18b through the plurality of second conductive layers 402, the conductive bonding layer 46' and the second conductive via 300. The number of the first conductive paths 200 and the second conductive paths 300 is not limited to a single one, and a plurality of the first conductive paths and the second conductive paths may be provided for the purpose of conducting or dissipating heat. The areas and configurations of the first electrode pad 18a and the second electrode pad 18b may also have different design manners due to the packaging structure, the wire bonding process, or the heat dissipation purpose, for example, the areas of the first electrode pad 18a and the second electrode pad 18b may be equal or different.

Fig. 7 is a sectional view of a light emitting element 4 according to a fourth embodiment of the present invention. As shown in fig. 7, the light emitting device 4 has a light emitting laminated structure 8 bonded and fixed on a supporting substrate 12 by a conductive bonding layer 46'. The structure and the manufacturing method of the light emitting laminated structure 8 of this embodiment are the same as those of the second embodiment, and the supporting substrate 12 is made of a non-conductive material. The conductive bonding layer 46' is disposed on the metal contact layer 30 for bonding the light emitting stacked structure 8 and the supporting substrate 12, and the second conductive layer 402 is connected to the second conductive via 300. In this way, the first semiconductor layer 22 is electrically connected to the first electrode pad 18a through the metal contact layer 30, the conductive bonding layer 46' and the first conductive via 200, and the second semiconductor layer 26 is electrically connected to the second electrode pad 18b through the second conductive layer 402 and the second conductive via 300.

The above-described embodiments are merely illustrative of the principles and utilities of the present application and are not intended to limit the application. Any person skilled in the art to which this application belongs can modify and change the above-mentioned embodiments without departing from the technical principle and spirit of this application. The scope of protection of the present application is therefore set forth in the appended claims.

Claims

1. A light emitting element comprising:

a support substrate comprising:

a first part forming a conductive path;

a second component; and

an annular opening defined by the first and second members, the first and second members each including a first surface and a second surface opposite the first surface, the annular opening extending from the first surface to the second surface;

an insulating material filled into the annular opening;

a light emitting laminate structure comprising:

a semiconductor stack having a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;

a first conductive layer disposed over the first component and between the semiconductor stack and the first component to electrically connect to the conductive via;

a second conductive layer disposed over the second component and between the semiconductor stack and the second component to electrically connect the semiconductor stack and the second component; and

and the conductive bonding layers are respectively arranged between the first conductive layer and the first part and between the second conductive layer and the second part, and the light-emitting laminated structure is bonded on the first surface by utilizing the conductive bonding layers.

2. The light-emitting element according to claim 1, further comprising a first electrode pad on the second surface of the first member, and a second electrode pad on the second surface of the second member and separated from the first electrode pad.

3. The light-emitting device according to claim 1, further comprising a plurality of vias through the first semiconductor layer and the active layer, the second conductive layer being disposed in each via to electrically connect the second semiconductor layer and the conductive bonding layer, and wherein the first conductive layer electrically connects the first semiconductor layer and the conductive via.

4. The light-emitting element according to claim 3, wherein insulating layers are provided between the first conductive layer and the second conductive layer, and between the semiconductor stack and the conductive bonding layer.

5. The light-emitting element according to claim 1, further comprising:

a through hole penetrating through the first semiconductor layer and the active layer, the first conductive layer being disposed in the through hole to electrically connect the second semiconductor layer and the conductive via, and wherein the second conductive layer is electrically connected to the first semiconductor layer and the conductive bonding layer; and

and the electrode extension layer is positioned on the second semiconductor layer and is connected with the first conductive layer.

6. The light-emitting device according to claim 5, wherein the light-emitting stacked structure further comprises an insulating layer covering sidewalls of the via hole.

7. The light-emitting device according to claim 1, wherein the conductive via and the supporting substrate are made of the same material.

8. The light emitting device as claimed in claim 1, wherein the material of the supporting substrate is gallium phosphide (GaP), silicon (Si), molybdenum (Mo), copper (Cu), a Metal material, a Metal alloy or a Metal-based printed circuit board (MCPCB).

9. The light-emitting element according to claim 1, wherein the light-emitting laminated structure has a wavelength conversion layer on a surface opposite to the support substrate.

10. The light-emitting device according to claim 1, wherein the first semiconductor layer has a reflective layer thereon.

11. The light-emitting device according to claim 1, wherein the second semiconductor layer has a roughened structure on a surface thereof.

12. A method for manufacturing a light emitting device includes:

providing a light emitting stack structure comprising: the first semiconductor layer, the active layer and the second semiconductor layer are arranged on a growing substrate;

forming a first bonding layer on the light-emitting laminated structure;

providing a substrate, wherein the substrate is provided with a first surface and a second surface opposite to the first surface;

etching the first surface of the substrate to a depth to form an annular closed groove, wherein the substrate is divided into a first part in the annular closed groove and a second part outside the annular closed groove by the annular closed groove;

filling an insulating material in the annular closed groove;

aligning the first conducting layer or the second conducting layer in the light-emitting laminated structure with the first part of the substrate;

the first bonding layer is used for bonding the light-emitting laminated structure and the first component and the second component of the substrate;

thinning the substrate from the second surface to expose the insulating material to form a third surface; and

an electrode pad is formed on the third surface.