WO2021110019A1 - Led light emitting device and manufacturing method therefor - Google Patents

Abstract

An LED light emitting device and a manufacturing method therefor, relating to the technical field of LEDs, for use in solving the technical problems of high cost and poor structural stability of LED light emitting devices. The LED light emitting device comprises: a carrier (1), the carrier (1) comprising a conductive layer (2); and an LED chip (6), the LED chip (6) being provided on the carrier (1), an electrode (61) of the LED chip (6) being flip-chip bonded to and conductively connected to the conductive layer (2), wherein the conductive layer (2) comprises a copper layer (5) and a soldering area (3) provided on the copper layer (5), and any of the soldering area (3) and the electrode (61) comprises a tin layer and does not comprise gold and nickel. The LED light emitting device and the manufacturing method therefor is used for reducing the cost of LED light emitting devices and improving the structural stability of LED light emitting devices.

Description

LED light emitting device and manufacturing method thereof

This invention is required to be filed with the U.S. Patent and Trademark Office on December 2, 2019, with application number 62/942,359, and the application name is "LED", and on July 6, 2020, with the U.S. Patent and Trademark Office, with application number 63. /048,343, the priority of the US patent application named "Lead frame design for dispensing", the entire content of which is incorporated into the present invention by reference.

Technical field

The present invention relates to the field of LED technology, in particular to an LED light-emitting device and a manufacturing method thereof.

Background technique

LED light-emitting devices have the advantages of long working life, low power consumption, small size, light weight, etc., and have been widely used in lighting, display and other fields.

A common LED light-emitting device includes a carrier and an LED chip. The carrier includes a conductive layer, the conductive layer includes a copper layer, and a soldering area is provided on the copper layer. The soldering area is composed of a nickel layer and a gold layer. The electrode of the LED chip is fixed on the gold layer by solder paste and electrically connected to the soldering area, so that the LED light-emitting device can emit light normally.

However, the above-mentioned LED light-emitting devices have the problems of high cost and poor structural stability.

Summary of the invention

In view of the foregoing problems, embodiments of the present invention provide an LED light-emitting device and a manufacturing method thereof, which are used to reduce the cost of the LED light-emitting device and improve the structural stability of the LED light-emitting device.

In order to achieve the foregoing objectives, the embodiments of the present invention provide the following technical solutions:

An embodiment of the present invention provides an LED light-emitting device, wherein the LED light-emitting device includes: a carrier, the carrier includes a conductive layer; an LED chip, the LED chip is arranged on the carrier, and the electrode of the LED chip Flip-chip bonding and conductive connection on the conductive layer;

Wherein, the conductive layer includes a copper layer and a welding area provided on the copper layer, and any one of the welding area and the electrode includes a tin layer, and does not include gold and nickel.

The LED light-emitting device provided by the embodiment of the present invention has the following advantages:

The LED light-emitting device provided by the embodiment of the present invention includes a carrier and an LED chip, the carrier includes a conductive layer, the electrodes of the LED chip are flip chip bonded and conductively connected to the conductive layer, and any one of the welding area of the conductive layer and the electrode of the LED chip Including tin layer, and excluding gold and nickel. With this arrangement, the nickel layer and the gold layer in the related solutions can be replaced by the tin layer, thereby saving cost. And when soldering at least one electrode of the LED chip to the soldering area, you only need to use flux (Flux) as a die bond to help and promote the soldering process, and the tin layer itself provides the electrode and the soldering area of the LED chip to be soldered together There is no need to use solder paste to provide tin. Because no solder paste is used, impurities other than tin in the solder paste can be avoided at the junction of the electrode and the soldering area of the LED chip after soldering, and the above-mentioned impurities are not easy to clean. Moreover, the tin layer can provide a higher proportion of tin to the soldering area than the solder paste, which improves the adhesion between the electrode of the LED chip and the soldering area; and the melting point of tin in the tin layer is higher than the melting point of the solder paste, so when soldering , There will be no secondary melting, thereby improving the structural stability of the LED light-emitting device.

The LED light-emitting device as described above, wherein the soldering area includes a tin layer.

The LED light-emitting device as described above, wherein the soldering area includes a tin layer and does not include gold and nickel; and the electrode includes gold and nickel.

The LED light-emitting device as described above, wherein the electrode includes a tin layer and does not include gold and nickel; and the soldering area includes gold and nickel.

The LED light-emitting device as described above, wherein the bonding area includes a tin layer and does not include gold and nickel; the electrode includes a tin layer but does not include gold and nickel.

The LED light-emitting device as described above, wherein the LED light-emitting device further includes a high-reflective bracket arranged on the carrier, the high-reflective bracket is a groove-shaped structure, and includes an integrally formed wall part and a base part; The area in the welding area that is in contact with the electrode of the LED chip is a chip contact area, and the base portion covers an area in the welding area excluding the chip contact area;

The LED chip is located in the high reflection bracket.

The LED light-emitting device as described above, wherein the material of the high-reflective bracket includes resin and filler, and the resin is any one of polyester, unsaturated polyester, and epoxy;

When the resin is the polyester, the filler includes at least one of titanium dioxide or glass fiber;

When the resin is the unsaturated polyester, the filler includes at least one of the titanium dioxide, silicon dioxide, and the glass fiber;

When the resin is the epoxy resin, the filler includes at least one of the titanium dioxide, the silicon dioxide, and the aluminum oxide.

The LED light-emitting device as described above, wherein the area of the conductive layer corresponding to the chip contact area is a conductive layer contact area, and the top surface of the conductive layer contact area and the top surface of the base portion are located on the same plane.

The LED light-emitting device as described above, wherein the LED chip includes two electrodes, and the conductive layer includes two welding areas corresponding to the two electrodes one-to-one;

The base part has an isolation part located between the two welding areas.

The LED light-emitting device as described above, wherein the top surface of the isolation portion is higher than the top surface of the conductive layer contact area.

The LED light-emitting device as described above, wherein the two soldering areas include two chip contact areas, the two chip contact areas correspond to the two conductive layer contact areas, and the two conductive layer contact areas Each has an extension part embedded in the isolation part.

The LED light-emitting device as described above, wherein the base is provided with a limiting protrusion, and the limiting protrusion is located at the periphery of the LED chip.

The LED light-emitting device as described above, wherein the shape of the LED chip is a square; the limiting protrusion includes at least one L-shaped protrusion, and the L-shaped protrusion is distributed beside at least one corner of the LED chip .

In the LED light-emitting device as described above, the shape of the LED chip is a square; the limiting protrusion is a square ring-shaped protrusion, and the square ring-shaped protrusion surrounds four sides of the LED chip.

The embodiment of the present invention also provides a method for manufacturing an LED light-emitting device, wherein the method for manufacturing the LED light-emitting device includes:

Providing a carrier, the carrier including a conductive layer; and

Provide an LED chip, and connect the electrodes of the LED chip with flip chip and conductively connect to the conductive layer;

Wherein, the conductive layer includes a copper layer and a welding area provided on the copper layer, and any one of the welding area and the electrode includes a tin layer, and does not include gold and nickel.

The manufacturing method of the LED light emitting device provided by the embodiment of the present invention has the following advantages:

The manufacturing method of the LED light-emitting device provided by the embodiment of the present invention includes providing a carrier including a conductive layer and an LED chip, and bonding the electrodes of the LED chip with flip-chip and conductively connected to the conductive layer; wherein the conductive layer includes a copper layer and is disposed on the conductive layer. The soldering area on the copper layer, any one of the soldering area and the electrode includes a tin layer, and does not include gold and nickel. After the above steps, the tin layer can replace the gold layer and the nickel layer, and there is no need to provide the gold layer and the nickel layer in the welding area, thereby saving the cost. And when at least one electrode of the LED chip is fixedly connected to the soldering area, only flux is used as a die bond to help and promote the soldering process. The tin layer itself provides tin for soldering the electrode of the LED chip and the soldering area, without Use solder paste to provide tin. Since no solder paste is used, impurities other than tin in the solder paste can be avoided at the junction between the electrode of the LED chip and the soldering area after soldering, and the above-mentioned impurities are not easy to clean, and the tin layer can be provided to the soldering area compared to the solder paste. A higher proportion of tin improves the adhesion between the electrode of the LED chip and the soldering area; and the melting point of pure tin is higher than that of tin paste, so there will be no secondary melting during reflow soldering, thereby improving the LED light-emitting device The structural stability.

The method for manufacturing an LED light-emitting device as described above, wherein the soldering area includes a tin layer.

The method for manufacturing an LED light-emitting device as described above, wherein the bonding area includes a tin layer and does not include gold and nickel; and the electrode includes gold and nickel.

The method for manufacturing an LED light-emitting device as described above, wherein the electrode includes a tin layer and does not include gold and nickel; and the bonding area includes gold and nickel.

The method for manufacturing an LED light emitting device as described above, wherein the soldering area includes a tin layer and does not include gold and nickel; and the electrode includes a tin layer and does not include gold and nickel.

The manufacturing method of the LED light-emitting device as described above, wherein the manufacturing method further includes:

Adding flux by dispensing glue on the welding area;

At least one electrode of the LED chip is attached to the flux; and

Performing reflow soldering on the electrode and the welding area, so that at least one electrode of the LED chip is welded and fixed in the welding area;

Wherein, the soldering flux does not have tin.

The manufacturing method of the LED light-emitting device as described above, wherein the manufacturing method further includes:

Providing a high-reflection support, the high-reflection support being arranged on the carrier; and

Arranging the LED chip in the high reflection bracket;

Wherein, the high-reflective bracket is a groove-shaped structure, including an integrally formed wall part and a base part; the area in the soldering area that is in contact with the electrode of the LED chip is a chip contact area, and the base part covers the The area of the bonding area excluding the chip contact area.

Description of the drawings

In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are For some of the embodiments of the invention, those of ordinary skill in the art can obtain other drawings based on these drawings without creative work.

Figure 1 is a schematic diagram of the structure of the welding zone in the related technology;

2 is a schematic diagram of the structure of the welding zone in the embodiment of the present invention;

Figure 3 is a scanning electron micrograph (SEM) of the welding area and electrode of the carrier in the embodiment of the present invention;

Fig. 4 is an energy dispersive X-ray spectrum (EDX) obtained by performing spectral analysis on the first analysis point in Fig. 3;

Figure 5 is a scanning electron micrograph (SEM) of the welding area and electrode of the carrier in the related scheme;

Fig. 6 is an energy dispersive X-ray spectrogram (EDX) obtained by performing spectral analysis on the second analysis point in Fig. 5;

FIG. 7 is a schematic diagram of the structure of the first highly reflective bracket in the embodiment of the present invention;

Figure 8 is a top view of Figure 7;

9 is a schematic diagram of the structure of the highly reflective support and the conductive layer when no LED chip is provided in the embodiment of the present invention;

10 is a schematic diagram of the structure when the conductive layer in FIG. 9 is provided with solder paste;

FIG. 11 is a schematic diagram of the structure when the LED chip is arranged in FIG. 9;

12 is a schematic diagram of the structure when the conductive layer is provided with flux in the embodiment of the present invention;

FIG. 13 is a schematic diagram of the structure when the LED chip is arranged in FIG. 12;

FIG. 14 is a schematic structural diagram of a second type of highly reflective bracket provided in an embodiment of the present invention;

Figure 15 is a top view of Figure 14;

16 is a schematic view of the structure of the conductive layer in FIG. 14 provided with flux;

FIG. 17 is a schematic diagram of the structure when the LED chip is arranged in the second type of highly reflective bracket in FIG. 14;

FIG. 18 is a schematic diagram of the structure when the LED chip is arranged in the third type of highly reflective bracket;

Figure 19 is a top view of Figure 18;

20 is a schematic diagram of the structure when the mixture of the bonding glue and the tin layer provided in the embodiment of the present invention overflows;

Figure 21 is a top view of Figure 20;

FIG. 22 is a schematic structural diagram of an extension portion of a conductive layer provided in an embodiment of the present invention; FIG.

Figure 23 is a top view of Figure 22;

24 is a schematic diagram of a structure of a limiting protrusion provided in an embodiment of the present invention;

Figure 25 is a top view of Figure 24;

FIG. 26 is a schematic diagram of the structure of the LED chip provided in the embodiment of the present invention when the position of the LED chip is shifted; FIG.

Figure 27 is a top view of Figure 26;

28 is a schematic structural diagram of another limiting protrusion provided in an embodiment of the present invention;

Figure 29 is a top view of Figure 28;

FIG. 30 is a schematic diagram of the flow of reflow soldering in an embodiment of the present invention;

FIG. 31 is a schematic structural diagram of an LED chip provided by an embodiment of the present invention.

Description of reference signs:

1: Carrier; 2: Conductive layer;

21: Conductive layer contact area; 22: Extension part;

3: The first welding zone; 31: the first analysis point;

4: The second welding zone; 41: Nickel layer;

42: Gold layer; 43: Second analysis point;

5: Copper layer; 6: LED chip;

61: Electrode; 610: Light-transmitting element substrate;

611: First surface; 612: Fourth area;

620: N-type semiconductor layer; 630: Light-emitting layer;

631: The third area; 640: P-type semiconductor layer;

650: the first N electrode; 651: the first joint surface;

660: the first P electrode; 670: the first insulating layer;

671: the first opening; 672: the second opening;

680: the second N electrode; 681: the first area;

690: the second P electrode; 691: the second area;

7: Highly reflective bracket; 71: Wall part;

72: base; 721: isolation part;

722: Limit protrusion; 8: Solder paste;

9: Flux.

Detailed ways

In the related art, the LED light-emitting device includes a carrier 1 and an LED chip. As shown in FIG. 1, the carrier 1 includes a conductive layer, and the conductive layer includes a copper layer 5 and a bonding area, that is, the second bonding area 4 in FIG. The welding area 4 covers the copper layer 5 to prevent the copper layer 5 from being oxidized by air. The second welding area 4 includes a nickel layer 41 and a gold layer 42. The electrode of the LED chip is fixed to the second soldering area 4 by the solder paste, thereby electrically connecting with the conductive layer, so that the LED light-emitting device can emit light normally. However, gold and nickel are relatively expensive, and the provision of the nickel layer 41 and the gold layer 42 increases the cost of the LED light-emitting device.

In addition, since the temperature required for the eutectic between the gold layer 42 and the LED chip is too high, it is difficult to achieve. Generally, solder paste is used as a bonding glue and the electrodes of the LED chip are welded and fixed in the second welding area through the tin powder dissolved in the solder paste. 4 on. However, there is flux in the solder paste, and the flux in the solder paste cannot be removed during the process of fixing the LED chip on the second soldering area 4, otherwise the solder powder will not be dissolved in the solder paste and damage the solder paste The performance stability. After the electrode of the LED chip is welded and fixed to the second welding area 4 by solder paste, since the flux cannot be removed, there are impurities such as flux at the junction of the electrode of the LED chip and the second welding area 4, which reduces the electrode of the LED chip. Adhesive force with the second soldering area 4; and the melting point of the solder paste is low, and the secondary melting is prone to occur during reflow soldering, so that the electrode of the LED chip is easily separated from the second soldering area 4, which reduces the LED light emitting device The structural stability.

In view of the above-mentioned problems, any one of the soldering area of the LED light emitting device and the electrode of the LED chip provided by the embodiment of the present invention includes a tin layer, and does not include gold and nickel. With this arrangement, the nickel layer and the gold layer are replaced by the tin layer, which saves costs. When soldering at least one electrode of the LED chip to the soldering area, you only need to use flux (Flux) as a bonding glue to help and promote the soldering process, and the tin layer of the soldering area itself provides the electrode and the soldering area of the LED chip. The tin together, there is no need to use solder paste to provide tin. Since no solder paste is used, impurities other than tin in the solder paste can be avoided at the junction between the electrode of the LED chip and the soldering area after soldering, and the above-mentioned impurities are not easy to clean, and the tin layer can be provided to the soldering area compared to the solder paste. A higher proportion of tin improves the adhesion between the electrode of the LED chip and the soldering area; and the melting point of pure tin in the tin layer is higher than the melting point of the solder paste, so there will be no secondary melting during reflow soldering. The structural stability of the LED light-emitting device is improved.

In order to make the above objectives, features and advantages of the embodiments of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

As shown in Figures 2 to 3, the LED light emitting device provided by the embodiment of the present invention includes a carrier 1 and an LED chip arranged on the carrier. The carrier 1 includes a conductive layer; the LED chip is arranged on the carrier, and the electrode of the LED chip is flip-chip. Bonded and conductively connected to the conductive layer; wherein the conductive layer includes a copper layer 5 and a first welding area 3 provided on the copper layer 5. Any one of the first welding area 3 and the electrode includes a tin layer and does not include Gold and nickel. The first welding zone 3 here is the welding zone in the embodiment of the present invention.

The carrier 1 may be a circuit board with a conductive layer, wherein the conductive layer may be a copper-plated layer, and the conductive layer includes a first bonding area 3 for conductive connection with the LED chip. The LED chip is a semiconductor device and a light-emitting component of the LED light-emitting device. The LED chip generally includes two electrodes 61. One or two electrodes of the LED chip can be connected to the first welding area 3 on the conductive layer. In some embodiments, the LED chip is a blue light or ultraviolet light (UV) chip, that is, the light emitted by the LED chip 6 is blue light or ultraviolet light. In a specific embodiment, the LED chip 6 may be a flip-chip LED chip. As shown in FIG. 31, the LED chip 6 includes a light-transmitting element substrate 610, an N-type semiconductor layer 620, a light-emitting layer 630, and a P-type semiconductor layer 640. , The first N electrode 650, the first P electrode 660, the first insulating layer 670, the second N electrode 680, and the second P electrode 690. The two electrodes 61 electrically connected to the first pad 3 of the conductive layer are the second N electrode 680 and the second P electrode 690 shown in FIG. 31.

The light-transmitting element substrate 610 may be sapphire, ceramic, resin, or thermosetting epoxy resin (EMC). The light-transmitting element substrate 610 includes a first surface 611. The N-type semiconductor layer 620 is disposed on the surface 611 and connected to the light-transmitting element substrate 610. The light-emitting layer 630 is disposed on the N-type semiconductor layer 620 and the light-emitting layer 630 contacts the N-type semiconductor layer 620 to form a third region 631. The P-type semiconductor layer 640 is disposed on the light-emitting layer 630, the light-emitting layer 630 and the P-type semiconductor 640 expose a fourth region 612 of the N-type semiconductor layer 620, and the fourth region 612 is not covered by the light-emitting layer 630 and the P-type semiconductor layer 640 In the region, the P-type semiconductor layer 640 contacts the N-type semiconductor layer to form the light-emitting layer 630. The first N electrode 650 is disposed on the fourth region 612 of the N-type semiconductor layer 620, and the first N electrode 650 is not connected to the P-type semiconductor layer 640, and the first N electrode 650 is in contact with the N-type semiconductor layer 620 to form a first junction面651. The first P electrode 660 is provided on the P-type semiconductor layer 640. The first N electrode 650 and the first P electrode 660 may be indium tin oxide (ITO) and indium zinc oxide (IZO), respectively.

The first insulating layer 670 is disposed on the N-type semiconductor 620 between the first N electrode 650 and the first P electrode 660 to insulate the two electrodes from each other. The first insulating layer 670 completely covers the left and right sides of the first N electrode 650, and also completely covers the left and right sides of the first P electrode 660, so that the first N electrode 650 and the first P The electrodes 660 are not electrically connected to each other. The first insulating layer 670 covers the lower side of the first N electrode 650 and forms at least one first opening 671, and the first insulating layer 670 covers the lower side of the first P electrode 660 and forms at least one second opening 672. The at least one first opening 671 and the at least one second opening 672 may be a cylindrical shape extending in a vertical direction, where the vertical direction is the vertical direction in FIG. 31. The second N electrode 680 is disposed on the first N electrode 650 and the first insulating layer 670. A part of the second N electrode 680 passes through the first opening 671 and is electrically connected to the first N electrode 650. The second N electrode 680 includes one The surface area of the first area 681 is larger than the surface area of the first joining surface 651. The second P electrode 690 is disposed on the first P electrode 660 and the first insulating layer 670. A part of the second P electrode 690 passes through the second opening 672 and is electrically connected to the first P electrode 660. The second P electrode 690 The second area 691 includes a second area 691, and the second area 691 is smaller than a third area 631 on the light-emitting layer 630, that is, the surface area of the second area 691 is smaller than the surface area of the third area 631. The second N electrode 680 and the second P electrode 690 have almost the same size (same surface area) from a bottom view, and the second N electrode 680 and the second P electrode 690 are electrically connected and fixed to the conductive layer. The first welding area 3, even if the size of the light-emitting layer 630 is to be increased, and thus the size of the first joint surface 651 is reduced, it is still possible to avoid the gap between the N-type and P-type electrodes and the first welding area 3 on the conductive layer. During electrical connection, due to the size change and higher requirements for welding accuracy, the production efficiency is reduced, and it is easier to maintain the uniformity of light emission, which is not limited here. The second N electrode 680 may also have a size smaller than the size of the second P electrode 690 or larger than the size of the second P electrode 690. For related background information of the chip, please refer to the record of patent document CN100487931C.

In a specific embodiment, the LED chip material may be nitride semiconductor, and the general formula of the nitride semiconductor is In _x Al _y Ga _1-xy N (0≦x, 0≦y, x+y≦1), The LED chip material can also be a mixed crystal formed by mixing B, P, and As with a nitride semiconductor. In addition, the N-type semiconductor layer and the P-type semiconductor layer are not particularly limited to a single layer or multiple layers. The nitride semiconductor layer is a light-emitting layer having an active layer, and the active layer is a single (SQW) or multiple quantum well structure (MQW). Below, examples of nitride semiconductor layers are shown. Used on a growth substrate, the base layer of a nitride semiconductor such as a buffer layer can be a low-temperature grown thin film GaN and GaN layer; as an N-type nitride semiconductor layer, it can be an N-type contact layer laminated with Si-doped GaN The N-type multilayer film layer with GaN/InGaN, or the active layer of the MQW layered with InGaN/GaN; the P-type nitride semiconductor layer can be a P-type multilayer film layer with Mg-doped InGaN/AlGaN layered and The structure of Mg-doped GaN P-type contact layer. In addition, the light-emitting layer (active layer) of the nitride semiconductor may have a quantum well structure including a well layer or a barrier layer and a well layer. The nitride semiconductor used in the active layer may be doped with P-type impurity, but through undoped or N-type impurity doping, the light-emitting element can be made into a high-output device. When Al is contained in the well layer, it is possible to obtain a wavelength shorter than the wavelength of the band gap energy of GaN, 365 nm. The wavelength of light emitted from the active layer can be adjusted according to the purpose, application, etc. of the light-emitting element, and the wavelength of the light can be around 360 nm to 650 nm, preferably the wavelength of light of 380 nm to 560 nm. The composition of the well layer is that InGaN is best used in the visible light and near-ultraviolet regions. In this case, the composition of the barrier layer is preferably GaN or InGaN. Specific examples of the film thickness of the barrier layer and the well layer are 1 nm or more and 30 nm or less and 1 nm or more and 20 nm or less, and can be used as a single quantum well structure with a single well layer, or a multiple quantum well structure of plural well layers such as a barrier layer.

In some embodiments, the LED light emitting device emits white light, and a blue or ultraviolet LED chip can be used in combination with a packaging gel mixed with yellow phosphors to mix blue and yellow light into white light.

In some embodiments, the phosphor used in the encapsulating gel of the LED chip is not limited to the phosphor of a specific color, and can be red phosphor, green phosphor or yellow phosphor, or two or more different colors of phosphor The composition, even if the same is red, green or yellow phosphor, it can also be composed of one or more different materials; specifically, taking red phosphor as an example, it may include CASN or SCASN series, such as CaAlSiN ₃ :Eu ²⁺ , (Sr,Ca)AlSiN ₃ :Eu ²⁺ , (SrCa)S:Eu ²⁺ , CaS:Eu ²⁺ , Sr ₃ Si(ON) ₅ :Eu ²⁺ ; KSF series, such as K ₂ SiF ₆ :Mn ⁴⁺ ; It also includes _{red phosphors with AE 1-z} S _1-y Se _y : zA as the general formula, where AE is at least one alkaline earth metal selected from Mg, Ca, Sr and Ba, 0≤y< 1 and 0.0005≤z≤0.2, A is at least one activator selected from Eu(II), Ce(III), Mn(II) and Pr(III); in addition, the green phosphor may include: L ₂ SiO ₄ :Eu ²⁺ (L is alkaline earth metal), especially (SrBa) ₂ SiO ₄ :Eu ²⁺ or (SrCa) ₂ SiO ₄ :Eu ²⁺ , or CaSc ₂ O ₄ :Ce ²⁺ , SrGa ₂ S :Eu ²⁺ , β-SiAlON (Si6-zAlzOzN8-z:Eu ²⁺ ) or LuAG (Lu ₃ Al ₅ O ₁₂ :Ce ²⁺ ), etc.; take the yellow phosphor as an example, which can include TAG (Tb ₃ Al ₅ O ₁₂ :Ce ³⁺ ), YAG (Y ₃ Al ₅ O ₁₂ :Ce ³⁺ ), Sr ₂ SiO ₄ :Eu ²⁺ , (SrBaCa)Si ₂ (OCl) ₂ N ₂ :Eu ²⁺ ; Can include quantum dot phosphors and/or non-quantum dot phosphors, or BAM (BaMgAl ₁₀ O ₁₇ ), BAM:Mn, (Zn, Cd)Zn:Cu, Sr ₅ (PO ₄ ) ₃ Cl:Eu ²⁺ , CCA, SCESN, SESN, CESN, CASBN, or by the general formula LSi2O2N2: Eu ²⁺ , L _x Si _y N _(2/3x+4/3y) : Eu ²⁺ , L _x Si _y O _z N _{(2/3x +4/3y-2/3z)} : ^{a phosphor represented by Eu 2+} (L is any one of Sr, Ca, Sr, and Ca), which can convert the wavelength of light from at least a part of the light-emitting element.

The electrodes of the LED chip are flip chip bonded and electrically connected to the conductive layer, so that the LED light-emitting device works normally. In addition, any one of the first welding area 3 and the electrode of the conductive layer includes a tin layer, and does not include gold and nickel, that is, at this time, the first welding area 3 uses a tin layer instead of the gold layer 42 and nickel in the related solution. The role of layer 41 is that tin is cheaper than gold and nickel, so this solution can save costs.

The method of flip chip bonding of the electrodes of the LED chip may be reflow soldering. When performing reflow soldering, only flux is needed to help and promote the soldering process, and the tin layer of the first soldering area 3 itself provides the tin for soldering the electrodes of the LED chip and the first soldering area 3, without the need to use solder paste. Provide tin. Since solder paste is not used, there is no need to use solder paste to provide tin. Since solder paste is not used, impurities other than tin in the solder paste can be avoided to remain at the junction between the electrode 61 of the LED chip and the first soldering area 3 after soldering, and The above-mentioned impurities are not easy to clean, and the tin layer of the first bonding area 3 can provide a higher proportion of tin to the first bonding area 3 than a solder paste, which improves the adhesion between the electrode of the LED chip and the first bonding area 3 In addition, the melting point of pure tin is higher than that of tin paste. During reflow soldering, there will be no secondary melting, which improves the structural stability of the LED light-emitting device.

It should be noted that any one of the first welding area 3 and the electrode includes a tin layer, and does not include gold and nickel. That is, the first bonding area 3 includes a tin layer and does not include gold and nickel; and/or, the electrode includes a tin layer and does not include gold and nickel. This arrangement can increase the structural diversity of the LED light-emitting device. In this embodiment, the tin layer is a part of the first welding zone 3. This arrangement can prevent the copper layer covered by the first welding area 3 from being oxidized by air before welding with the LED chip electrode 61. Based on the tin layer, tin can be provided as a conductive component, and the flux can be a flux that does not contain conductive components such as tin.

In the actual production process, the tin plating method of tin plating on the copper layer 5 of the first welding zone 3 can be used to set the tin layer on the copper layer 5 of the first welding zone 3, that is, the copper layer 5 in the welding zone passes through The chemical reaction is coated with pure tin. The tin plating method adopts tin, the process is simple, the phenomenon of plate explosion is not easy to occur, and the thickness of the tin layer is uniform.

Fig. 3 is a scanning electron micrograph (SEM) of the contact area between the carrier 1 and the electrode 61 in an embodiment of the present invention, and Fig. 5 is a scanning electron micrograph (SEM) of the contact area between the carrier 1 and the electrode 61 in a related scheme ). In an achievable embodiment, the above-mentioned carrier 1 is a PCB carrier. As shown in FIG. 3, in the scanning electron microscopic image of the contact area between the carrier 1 and the electrode 61 provided by the embodiment of the present invention, the LED chip electrode 61 and Between the copper layer 5 is the welding area of this scheme, namely the first welding area 3. As shown in FIG. 5, in the scanning electron micrograph of the contact area between the carrier 1 and the electrode 61 of the related scheme, the chip electrode 61 and the copper layer Between 5 is the welding area of the related scheme, that is, the second welding area 4.

Performing spectral analysis on the first analysis point 31 of the first welding zone 3 can obtain the energy dispersive X-ray spectrogram as shown in Fig. 4, and analyzing the energy dispersive X-ray spectrogram as shown in Fig. 4 can be obtained as shown in Table 1. The element type and the proportion of each element at the first analysis point 31 of the first welding zone 3 of the carrier 1 and the electrode 61 provided by the embodiment of the present invention are shown. Table 1 shows that the first welding zone 3 is the first The elements at analysis point 31 include C, Cu, and Sn, where C mainly comes from the flux, Cu mainly comes from the first solder zone 3, and Sn mainly comes from the tin layer.

Table 1: Element types at the first analysis point and the proportion of each element

Performing spectral analysis on the second analysis point 43 of the second welding zone 4 can obtain the energy dispersive X-ray spectrogram as shown in Fig. 6, and analyzing the energy dispersive X-ray spectrogram as shown in Fig. 6 can be obtained as shown in Table 2. The element types and the proportions of the elements at the second analysis point 43 of the second welding zone 4 of the carrier 1 and the electrode 61 provided by the related solutions shown in Table 2 show that the second analysis point of the second welding zone 4 Elements at 43 include C, P, Ni, Cu, Sn, where C mainly comes from flux, Ni mainly comes from the nickel layer 41, Cu mainly comes from the second pad 4 and solder paste, and Sn mainly comes from solder paste .

Table 2: Element types at the second analysis point and the proportion of each element

Comparing Table 1 and Table 2, it can be seen that the elements in the contact area between the carrier 1 and the electrode 61 in the embodiment of the present invention do not contain nickel and phosphorus, that is, the embodiment of the present invention does not provide the nickel layer 41, and the embodiment of the present invention does not use solder paste. Therefore, the cost can be reduced, and the risk of secondary melting during reflow soldering can be reduced.

As shown in FIGS. 7-8, the LED light-emitting device provided by the embodiment of the present invention further includes a high-reflective bracket 7 arranged on the carrier 1, and the LED chip 6 is located in the high-reflective bracket 7. Specifically, the LED chip 6 is fixed on the first welding area 3 in the high-reflective bracket 7 by soldering with a tin layer. With this arrangement, the light emitted by the LED chip 6 can be reflected by the high-reflective bracket 7 so as to achieve the effect of increasing the light intensity emitted by the LED chip 6.

The material of the high reflection bracket 7 is shown in Table 3, including resin and filler, where the resin can be any of polyester, unsaturated polyester, and epoxy. When the resin is polyester, the filler includes _{at least one of titanium dioxide (TiO 2} ) or glass fiber (Glass fiber); when the resin is an unsaturated polyester, the filler includes titanium dioxide (TiO ₂ ), silicon dioxide ( At least one of SiO ₂ ) and glass fiber (Glass fiber); when the resin is epoxy resin, the filler includes titanium dioxide (TiO ₂ ), silicon dioxide (SiO ₂ ), and aluminum oxide (Al ₂ O ₃ ). At least one of.

Table 3: Materials of high-reflective bracket

It should be noted that, in a specific embodiment, when the light emitted by the LED chip 6 is visible light with a wavelength range of 100-700nm, the reflectance of silver to the visible light is 94%-98%, and the tin to the visible light The reflectivity of the high-reflection bracket 7 is between 77% and 81%, and the reflectivity of the high-reflection bracket 7 to the visible light is between 95% and 97%.

As shown in Figs. 9-11, the general way of reflecting the light emitted by the LED chip 6 in the general LED light-emitting device is to include a silver layer in the soldering area of the conductive layer 2 shown in Fig. 9, and the LED chip 6 is soldered and fixed to the conductive layer 2. The light emitted by the LED chip 6 is reflected by the silver layer. However, since the melting point of silver is as high as 961°C, the temperature required for the eutectic between the silver layer and the electrode 61 of the LED chip 6 is too high, which is difficult to achieve, so solder paste 8 is required. As the bonding glue, solder paste or dispensing solder paste is applied to the soldering area shown in FIG. 9, and the electrode 61 of the LED chip 6 is soldered and fixed in the soldering area by the tin powder dissolved in the solder paste 8. During the soldering process, due to the use of the solder paste 8, the secondary tin melting is likely to occur, and the electrode 61 of the LED chip 6 is easily separated from the soldering area, causing the LED light-emitting device to fail.

As shown in Figures 12-15, compared to the LED light-emitting device provided with a silver layer, the first soldering area 3 of the conductive layer 2 of the LED light-emitting device provided in this embodiment includes a tin layer, and the electrode 61 of the LED chip 6 is soldered For the conductive layer, only the solder flux 9 is used as the bonding glue, that is, the solder flux 9 is dispensed on the conductive layer 2 as shown in FIG. 9, and there is no need to use the solder paste 8 to provide tin, and the tin layer itself can provide tin. In addition, the melting point of pure tin is higher than that of the solder paste 8, and no secondary melting occurs during reflow soldering, which improves the structural reliability of the LED light-emitting device.

The LED chip 6 can be a flip chip or a formal chip, and the specific conditions can be selected according to actual needs. The LED chip 6 may be various types of LED chips, such as mini LEDs and small-pitch light-emitting diodes. In this embodiment, the LED chip 6 is a flip chip. Compared with the normal chip, the flip chip can further increase the light extraction rate of the LED light-emitting device and increase the light intensity of the LED light-emitting device. In a specific embodiment, the LED chip 6 may use the chip shown in Table 4.

It should be noted that when the LED chip is an ultra-fine-pitch light-emitting diode (mini LED), that is, when the LED light-emitting device is a mini LED light-emitting device, since the size of the ultra-fine-pitch light-emitting diode is extremely small, the size of the corresponding dispenser is also Very small, and the size of the tin particles in the solder paste cannot be spotted from the outlet of the dispenser. As a result, when the solder paste is used as the solid crystal glue, the dispenser cannot be used to add the solder paste, and only brushing can be used. Add solder paste by machine brushing. The flux used in this embodiment can be dispensed by a dispenser, thereby improving the accuracy of LED chip bonding.

Table 4: Parameters of an LED chip

LED chip specifications	If (forward current) = 60mA
Size(mil)	20*40(800)
Pad size (um)	465x365
Wavelength (nm)	452.5-454.09-455
Vf(V)	3.1-3.15-3.2
PO(mW)	430-453.66-460

As shown in FIGS. 14-15, in some embodiments, the LED chip 6 includes two electrodes 61, and the conductive layer 2 of the carrier 1 includes two first welding areas 3 corresponding to the above two electrodes 61 one-to-one. Each first welding area 3 includes a chip contact area, the chip contact area is the area where the first welding area 3 contacts the electrode 61 of the LED chip 6, and the area of the conductive layer 2 corresponding to each chip contact area is the conductive layer contact area 21, that is, the part of the conductive layer 2 that is in contact with the electrode 61 of the LED chip 6 is the conductive layer contact area 21. As shown in FIG. 14, in some embodiments, the upper end of the conductive layer contact area 21 is a chip contact area. The size of the conductive layer contact area 21 can be designed with reference to the size of the LED chip 6.

When the model of the LED chip 6 is different, the size of the LED chip 6 is also different. Table 5 lists the sizes of three different models of LED chips; as shown in Table 5, the sizes of the three different models of LED chips 6 are in order It is 580μm*1170μm, 660μm*760μm, 510μm*1020μm. Among them, 580μm, 660μm, and 510μm are the longitudinal dimensions of the three different types of LED chips 6 in sequence, which can be characterized by a in Figure 8; 1170μm, 760μm, and 1020μm are the horizontal dimensions of the three different types of LED chips in order. The size, the lateral size can be characterized by b in FIG. 8.

Table 5: The brightness of the LED light-emitting devices in the first, second and third options

NO	Option One	Option II	third solution
1	20.33	14.21	21.20
2	22.50	14.45	21.84
3	20.71	15.05	21.19
4	22.00	14.55	21.40
5	22.20	14.91	21.60
6	21.11	14.91	20.46
7	22.30	14.43	20.63
8	22.45	15.01	20.83
9	21.31	14.85	20.90
10	21.29	14.75	21.66
11	21.82	14.68	22.10
12	21.19	14.54	20.64
13	21.36	14.74	21.03
14	22.25	14.42	20.82
15	22.41	14.44	22.07
16	21.01	14.89	20.67
17	20.89	14.52	20.96
18	21.56	14.34	20.58
19	21.85	14.95	21.46
20	22.08	14.73	22.36
twenty one	21.37	14.69	21.16
twenty two	21.63	14.74	21.04
twenty three	21.43	14.56	21.73
twenty four	21.17	14.53	22.36
25	20.98	14.68	22.08
26	21.66	14.40	20.96
27	21.06	14.80	22.40
28	21.82	15.24	20.57
29	22.34	14.54	22.09
30	21.54	14.25	22.38
AVG.	21.59	14.66	21.37
brightness	100.00%	67.91%	99.00%

When the size of the LED chip 6 is 580μm*1170μm, the size of each electrode 61 of the LED chip 6 is 530μm*450μm; when the size of the LED chip 6 is 660μm*760μm, the size of each electrode 61 of the LED chip 6 is 460 μm*205 μm or 500 μm*225 μm. When the size of the LED chip 6 is 510 μm*1020 μm, the size of each electrode 61 of the LED chip 6 is 435 μm*365 μm.

The size of the conductive layer contact area 21 can be slightly smaller than the size of the electrode 61 of the LED chip 6, so that the electrode 61 of the LED chip 6 can completely cover the chip contact area on the conductive layer contact area 21, that is, the electrode of the LED chip 6. 61 completely covers the tin layer on the conductive layer contact area 21, thereby improving the adhesion (pushing force) between the electrode 61 of the LED chip 6 and the conductive layer contact area 21. As shown in FIG. 15, in a specific embodiment, the size of each conductive layer contact area 21 is 205 μm*435 μm, and the interval between two conductive layer contact areas 21 is 150 μm. Among them, 205 μm is the lateral dimension of the conductive layer contact area 21, which can be characterized by c in FIG. 15, and 435 μm is the longitudinal dimension of the conductive layer contact area 21, which can be characterized by d in FIG. 15; two conductive layer contact areas The interval between 21 can be characterized by e in FIG. 15.

Further, as shown in FIGS. 16 and 17, the high reflection bracket 7 is a groove-shaped structure, and includes an integrally formed wall portion 71 and a base portion 72. The LED chip 6 is soldered and fixed on the conductive layer 2 in the high-reflection bracket 7 through the tin layer of the first soldering area 3, and the base portion 72 covers the area of the first soldering area 3 except the chip contact area.

With this arrangement, the light emitted by the LED chip 6 can be reflected by the base 72, compared to the light emitted by the LED chip 6 being reflected by the tin layer in the area other than the chip contact area in the first bonding area 3, due to the high reflection bracket 7 The reflectance of visible light is higher than that of the tin layer, so that the structure of the highly reflective bracket 7 provided in this embodiment can increase the intensity of the light emitted from the light outlet of the highly reflective bracket 7, thereby increasing the LED light emitting device emits The intensity of the light.

When the size of the LED chip 6 is 22mil*40mil. Table 5 shows the results obtained by simulating the brightness of the LED light-emitting devices in the first, second, and third scenarios. Among them, 22mil refers to the longitudinal dimension of the LED chip 6. The specific structures of Scheme 1, Scheme 2 and Scheme 3 are as follows:

The soldering area of the LED light-emitting device in the first solution is a silver layer, and the base 72 does not cover areas other than the chip contact area; the soldering area of the LED light-emitting device in the second solution is a tin layer, and the base 72 does not cover the other than the chip The area other than the contact area; the soldering area of the LED light-emitting device in the third solution is a tin layer, and the base 72 covers the area except the chip contact area.

It can be seen from Table 5 that the average brightness of the light emitted by the LED light-emitting devices in the first, second, and third solutions are 21.59, 14.66, and 21.37, respectively. The average brightness of the light emitted by the LED light-emitting devices in the second and third solutions is the same as the solution The ratio of the average brightness of the light emitted by the LED light-emitting device in No. 1 is 67.91% and 99.00%.

It can be seen from the above analysis that the brightness of the light emitted by the LED light-emitting device in the third solution is much greater than that of the LED light-emitting device in the second solution, indicating that when the base 72 covers the soldering area except the chip contact area, it can be Greatly improve the brightness of the light emitted by the LED lighting device. At the same time, because the brightness of the LED light-emitting device in the third solution is relatively close to that of the LED light-emitting device in the first solution, it indicates that when the base 72 covers the area other than the chip contact area, the soldering area formed by the silver layer is replaced with The soldering area formed by the tin layer has little effect on the brightness of the light emitted by the LED light-emitting device. Therefore, the silver layer can be replaced with a tin layer, thereby reducing the cost of the LED light-emitting device, avoiding secondary melting during soldering, and improving the structural reliability of the LED light-emitting device.

It can be seen from the above content that one LED chip 6 corresponds to two first welding areas 3. In order to separate the two first welding areas 3, the base portion 72 includes an isolation portion 721 located between the two first welding areas 3. As shown in FIG. 18, in a specific embodiment, the isolation portion 721, the base portion 72 can separate the two first welding areas 3 into the positive electrode welding area and the negative electrode welding area, and the positive electrode welding area and the LED chip 6 The positive electrode is electrically connected, and the negative electrode welding area is electrically connected to the negative electrode of the LED chip 6.

As shown in FIGS. 14, 16 and 17, in an achievable embodiment, the top surface of the conductive layer contact area 21 and the top surface of the base portion 72 are in the same plane. With this arrangement, when the LED chip 6 is fixed in the conductive layer contact area 21, the LED chip 6 is not easily shaken, thereby improving the structural stability of the LED light-emitting device.

As shown in FIGS. 18-19, in another achievable embodiment, the top surface of the isolation portion 721 of the base portion 72 is higher than the top surface of the conductive layer contact region 21. This arrangement can prevent the mixture of die-bonding glue and tin layer from overflowing during the welding process.

As shown in FIGS. 20-21, when the top surface of the isolation portion 721 is not higher than the top surface of the conductive layer contact area 21, the mixture of the bonding glue and the tin layer on the two conductive layer contact areas 21 located on the left and right sides flows to The isolation portion 721 makes the two conductive layer contact areas 21 on the left and right sides conductively connected, resulting in a short circuit of the LED light-emitting device. By setting the top surface of the isolation portion 721 higher than the top surface of the conductive layer contact area 21, the mixture of the bond glue and the tin layer on the two conductive layer contact areas 21 on the left and right sides can be blocked from flowing to the isolation portion 721, avoiding the left and right sides. The two conductive layer contact areas 21 are electrically connected, so as to avoid short-circuit failure.

Referring to Figures 22-23, the LED light-emitting device will be deformed when subjected to external forces such as bending or impact, especially when the LED light-emitting device is used as an edge-type backlight. At this time, the LED light-emitting device has a long and narrow structure and is subjected to bending. It is easy to crack when external forces such as folding and impact are applied. Therefore, in order to enhance the ability of the LED light-emitting device to resist bending and impact deformation, in the present embodiment, the two conductive layer contact areas 21 on the left and the right are provided with extensions 22 embedded in the isolation portion 721.

As an achievable embodiment, referring to FIGS. 24-25, the base 72 is provided with a limiting protrusion 722 located on the periphery of the LED chip 6. By setting the limit protrusion 722, it is possible to prevent the position of the LED chip 6 from shifting due to the heat fusion of the die bond and the tin layer during operations such as reflow soldering (refer to Figure 26-27), resulting in the LED chip 6 The adhesion force (thrust force) between the electrode 61 and the chip contact area is insufficient, and the light emitted by the LED light-emitting device appears light-type distortion, and the LED light-emitting device is electrically abnormal.

It should be noted that when the position of the LED chip 6 does not shift, the LED light emitting device will correspond to a specific light intensity at a specific light output angle. When the position of the LED chip 6 shifts, at this time, the position of the LED chip 6 relative to the high-reflective support 7, the first welding area 3 and other structures has changed, and the light emitted by the LED chip 6 passes through the high-reflective support 7, the first welding The parameters such as the angle and intensity of the output of the structure such as zone 3 will also change after reflection, which causes the light-type distortion of the light emitted by the LED light-emitting device.

Further, in a possible embodiment, as shown in FIGS. 24-25, the shape of the LED chip 6 is square, the limiting protrusion 722 includes at least one L-shaped protrusion, and the L-shaped protrusions are distributed on the LED At least one corner of the chip. In this embodiment, the limiting protrusion 722 includes four L-shaped protrusions distributed at the four corners of the LED chip 6. This arrangement has less influence on the light emitted by the LED chip 6 and can prevent the LED chip 6 from shifting in the four directions of up, down, left, and right in FIG. 14.

In another possible embodiment, as shown in FIGS. 28-29, the shape of the LED chip 6 is square; the limiting protrusion 722 is a square ring-shaped protrusion, and the square ring-shaped protrusion surrounds the four sides of the LED chip 6. Sides.

The embodiment of the present invention also provides a method for manufacturing an LED light-emitting device. The method for manufacturing an LED light-emitting device provided by the embodiment of the present invention first provides a carrier, and the carrier includes a conductive layer;

Secondly, an LED chip is provided, and the electrodes of the LED chip are flip-chip bonded and conductively connected to the conductive layer;

Wherein, the conductive layer includes a copper layer and a welding area provided on the copper layer, and any one of the welding area and the electrode includes a tin layer, and does not include gold and nickel.

After the above steps, the LED chip and the conductive layer can be electrically connected, so that the LED light-emitting device can work normally. Moreover, any one of the soldering area and the electrode of the carrier includes a tin layer, and does not include gold and nickel, that is, the gold layer and the nickel layer in the related scheme are replaced by the tin layer, and compared with gold and nickel, tin is cheaper and can be save costs.

And when the electrode of the LED chip is fixedly connected to the soldering area, only the flux is used as a die bond to help and promote the soldering process. There is no need to use solder paste to provide tin. The tin layer itself can provide tin, and the flux is better than solder paste. Cheap, can reduce costs. Since no solder paste is used, impurities other than tin in the solder paste can be avoided at the junction between the electrode of the LED chip and the soldering area after soldering, and the above-mentioned impurities are not easy to clean, and the tin layer can be provided to the soldering area compared to the solder paste. A higher proportion of tin improves the adhesion between the electrode of the LED chip and the soldering area; and the melting point of pure tin is higher than that of solder paste, so there will be no secondary melting during reflow soldering, which reduces the electrode of the LED chip. The risk of leaving the soldering zone improves the structural stability of the LED light-emitting device. In a specific embodiment, the bonding force between the electrode of the LED chip and the soldering area is 50G-60G, which is much greater than that of the LED chip when the nickel layer and the gold layer are arranged on the carrier and the solder paste is used for connection in the related solution. The adhesion between the electrode and the welding area (25G-35G).

It should be noted that any one of the soldering area and the electrode of the carrier includes a tin layer, and does not include gold and nickel. That is, the soldering area includes a tin layer and does not include nickel and gold; and/or, the electrode includes a tin layer and does not include gold and nickel. Such a design can increase the flexibility of the manufacturing method of the LED light-emitting device.

Further, in order to fix at least one electrode of the LED chip in the welding area, in a specific embodiment, the method further includes the following steps:

First, add flux by dispensing glue on the soldering zone; the flux does not contain tin.

Secondly, at least one electrode of the LED chip is attached to the flux;

Finally, reflow soldering is performed on the electrode and the soldering area, so that at least one electrode of the LED chip is soldered and fixed in the soldering area.

Adopting the glue dispensing method of the glue machine, compared with the brushing method of the tin brushing machine, has the advantages of high precision and not easy to brush, so that the LED chip can be solidified, that is, at least one electrode of the LED chip is attached to the helper. When the flux is applied, the LED chip will not shift, so that the light pattern of the light emitted by the LED light-emitting device will not shift.

And when the LED chip is an ultra-fine-pitch light-emitting diode (mini LED), because the size of the ultra-fine-pitch light-emitting diode is extremely small, the size of the corresponding dispenser is also extremely small, and the size of the tin particles in the solder paste cannot be The exit point of the glue machine is out, and when the solder paste is used as the solid crystal glue, the glue can not be added by the glue dispensing method, and the solder paste can only be added by the brushing method of the tin brushing machine. The flux used in this embodiment can be dispensed by a dispenser, thereby improving the accuracy of LED chip bonding.

As shown in FIG. 30, in a specific embodiment, the step of performing reflow soldering on the electrode and the soldering area so that at least one electrode of the LED chip is soldered and fixed in the soldering area includes:

Heat the electrode and welding zone to 180°C-200°C at a rate of 1-5°C/s. This arrangement preheats the electrode and the welding area and removes the moisture in the bonding glue.

Keep the electrode and welding area at 180℃-200℃, and the duration is less than or equal to 120s. This arrangement can ensure that the die bond is completely dry, and at the same time can remove the metal oxide in the electrode and the welding area.

Heat the electrode and welding zone to 260°C at a rate of 1-5°C/s, where the time for the electrode and welding zone to be higher than 220°C is less than or equal to 60s. With this arrangement, the tin layer can be fused and the electrode can be connected to the soldering area.

Gradually reduce the temperature of the electrode and the welding area, so that at least one electrode of the LED chip is fixed in the welding area.

Further, in a specific embodiment, the manufacturing method of the LED light-emitting device further includes: providing a high-reflection support, the high-reflection support is arranged on the carrier; the high-reflection support is a groove-shaped structure, including an integrally formed wall and Base: The area in the soldering area that is in contact with the electrode of the LED chip is the chip contact area, and the base covers the area of the soldering area except the chip contact area.

Set the LED chip in the high-reflection bracket.

With this arrangement, the light emitted by the LED chip can be reflected by the high-reflection bracket, and the brightness of the light-emitting direction of the LED light-emitting device can be improved.

The embodiments or implementations in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referred to each other.

Those skilled in the art should understand that, in the disclosure of the present invention, the terms "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", " The orientation or positional relationship indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention And to simplify the description, rather than indicating or implying that the system or component referred to must have a specific orientation, be constructed and operated in a specific orientation, so the above terms should not be construed as limiting the present invention.

In the description of this specification, reference to descriptions such as "one embodiment", "some embodiments", "exemplary embodiments", "examples", "specific examples", or "some examples" means to combine the embodiments The specific features, structures, materials, or characteristics described in the examples are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above-mentioned terms do not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or equivalently replace some or all of the technical features; these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the embodiments of the present invention. range.

Claims (21)

1. An LED light emitting device, characterized in that it comprises:

   A carrier, the carrier including a conductive layer; and

   LED chip, the LED chip is arranged on the carrier, the electrode of the LED chip is flip chip bonded and conductively connected to the conductive layer;

   Wherein, the conductive layer includes a copper layer and a welding area provided on the copper layer, and any one of the welding area and the electrode includes a tin layer, and does not include gold and nickel.
2. The LED light-emitting device according to claim 1, wherein the soldering area comprises a tin layer.
3. The LED light-emitting device according to claim 1, wherein the soldering area includes a tin layer and does not include gold and nickel; and the electrode includes gold and nickel.
4. The LED light-emitting device according to claim 1, wherein the electrode includes a tin layer and does not include gold and nickel; and the welding area includes gold and nickel.
5. The LED light-emitting device according to claim 1, wherein the soldering area includes a tin layer and does not include gold and nickel; and the electrode includes a tin layer and does not include gold and nickel.
6. The LED light-emitting device according to claim 1, wherein the LED light-emitting device further comprises a high-reflective bracket arranged on the carrier, the high-reflective bracket is a groove-shaped structure, and includes an integrally formed wall part And a base; the area in the soldering area that is in contact with the electrode of the LED chip is a chip contact area, and the base covers the area of the soldering area excluding the chip contact area;

   The LED chip is located in the high reflection bracket.
7. The LED light-emitting device according to claim 6, wherein the material of the high-reflective bracket includes resin and filler, and the resin is any one of polyester, unsaturated polyester, and epoxy;

   When the resin is the polyester, the filler includes at least one of titanium dioxide or glass fiber;

   When the resin is the unsaturated polyester, the filler includes at least one of the titanium dioxide, silicon dioxide, and the glass fiber;

   When the resin is the epoxy resin, the filler includes at least one of the titanium dioxide, the silicon dioxide, and the aluminum oxide.
8. The LED light-emitting device according to claim 6, wherein the area of the conductive layer corresponding to the chip contact area is a conductive layer contact area, and the top surface of the conductive layer contact area and the top surface of the base portion are located same plane.
9. 7. The LED light-emitting device according to claim 6, wherein the LED chip includes two electrodes, and the conductive layer includes two soldering areas corresponding to the two electrodes one-to-one;

   The base part has an isolation part located between the two welding areas.
10. 9. The LED light-emitting device according to claim 9, wherein the top surface of the isolation portion is higher than the top surface of the conductive layer contact area.
11. The LED light-emitting device according to claim 9, wherein the two soldering areas include two chip contact areas, the two chip contact areas correspond to the two conductive layer contact areas, and the two contact areas are The conductive layer contact area has an extension part embedded in the isolation part.
12. The LED light-emitting device according to any one of claims 6-11, wherein the base is provided with a limiting protrusion, and the limiting protrusion is located on the periphery of the LED chip.
13. The LED light-emitting device according to claim 12, wherein the shape of the LED chip is a square; the limiting protrusion includes at least one L-shaped protrusion, and the L-shaped protrusion is distributed on the LED chip. At least one corner.
14. The LED light-emitting device according to claim 12, wherein the shape of the LED chip is a square; the limiting protrusion is a square ring-shaped protrusion, and the square ring-shaped protrusion surrounds the LED chip Four sides.
15. A method for manufacturing an LED light-emitting device, which is characterized in that it comprises:

    Providing a carrier, the carrier including a conductive layer; and

    Provide an LED chip, and connect the electrodes of the LED chip with flip chip and conductively connect to the conductive layer;

    Wherein, the conductive layer includes a copper layer and a welding area provided on the copper layer, and any one of the welding area and the electrode includes a tin layer, and does not include gold and nickel.
16. The method for manufacturing an LED light emitting device according to claim 15, wherein the soldering area includes a tin layer.
17. The method for manufacturing an LED light emitting device according to claim 15, wherein the soldering area includes a tin layer and does not include gold and nickel; and the electrode includes gold and nickel.
18. 15. The method of manufacturing an LED light emitting device according to claim 15, wherein the electrode includes a tin layer and does not include gold and nickel; and the welding area includes gold and nickel.
19. 15. The method for manufacturing an LED light emitting device according to claim 15, wherein the soldering area includes a tin layer and does not include gold and nickel; and the electrode includes a tin layer and does not include gold and nickel.
20. The method of manufacturing an LED light-emitting device according to claim 15, wherein the manufacturing method further comprises:

    Adding flux by dispensing glue on the welding area;

    At least one electrode of the LED chip is attached to the flux; and

    Performing reflow soldering on the electrode and the welding area, so that at least one electrode of the LED chip is welded and fixed in the welding area;

    Wherein, the soldering flux does not have tin.
21. The method for manufacturing an LED light-emitting device according to any one of claims 15-20, wherein the manufacturing method further comprises:

    Providing a high-reflection support, the high-reflection support being arranged on the carrier; and

    Arranging the LED chip in the high reflection bracket;

    Wherein, the high-reflective bracket is a groove-shaped structure, including an integrally formed wall part and a base part; the area in the soldering area that is in contact with the electrode of the LED chip is a chip contact area, and the base part covers the The area of the bonding area excluding the chip contact area.

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