WO2021110019A1 - Dispositif électroluminescent à del et son procédé de fabrication - Google Patents

Dispositif électroluminescent à del et son procédé de fabrication Download PDF

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Publication number
WO2021110019A1
WO2021110019A1 PCT/CN2020/133281 CN2020133281W WO2021110019A1 WO 2021110019 A1 WO2021110019 A1 WO 2021110019A1 CN 2020133281 W CN2020133281 W CN 2020133281W WO 2021110019 A1 WO2021110019 A1 WO 2021110019A1
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Prior art keywords
area
emitting device
led light
electrode
layer
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PCT/CN2020/133281
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English (en)
Chinese (zh)
Inventor
林纪年
林羿孜
李昱达
陈庆
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亿光电子工业股份有限公司
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Priority to CN202080083419.1A priority Critical patent/CN114747025A/zh
Publication of WO2021110019A1 publication Critical patent/WO2021110019A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto

Definitions

  • the present invention relates to the field of LED technology, in particular to an LED light-emitting device and a manufacturing method thereof.
  • LED light-emitting devices have the advantages of long working life, low power consumption, small size, light weight, etc., and have been widely used in lighting, display and other fields.
  • a common LED light-emitting device includes a carrier and an LED chip.
  • the carrier includes a conductive layer, the conductive layer includes a copper layer, and a soldering area is provided on the copper layer.
  • the soldering area is composed of a nickel layer and a gold layer.
  • the electrode of the LED chip is fixed on the gold layer by solder paste and electrically connected to the soldering area, so that the LED light-emitting device can emit light normally.
  • embodiments of the present invention provide an LED light-emitting device and a manufacturing method thereof, which are used to reduce the cost of the LED light-emitting device and improve the structural stability of the LED light-emitting device.
  • An embodiment of the present invention provides an LED light-emitting device, wherein the LED light-emitting device includes: a carrier, the carrier includes a conductive layer; an LED chip, the LED chip is arranged on the carrier, and the electrode of the LED chip Flip-chip bonding and conductive connection on the conductive layer;
  • the conductive layer includes a copper layer and a welding area provided on the copper layer, and any one of the welding area and the electrode includes a tin layer, and does not include gold and nickel.
  • the LED light-emitting device provided by the embodiment of the present invention includes a carrier and an LED chip, the carrier includes a conductive layer, the electrodes of the LED chip are flip chip bonded and conductively connected to the conductive layer, and any one of the welding area of the conductive layer and the electrode of the LED chip Including tin layer, and excluding gold and nickel. With this arrangement, the nickel layer and the gold layer in the related solutions can be replaced by the tin layer, thereby saving cost.
  • the tin layer can provide a higher proportion of tin to the soldering area than the solder paste, which improves the adhesion between the electrode of the LED chip and the soldering area; and the melting point of tin in the tin layer is higher than the melting point of the solder paste, so when soldering , There will be no secondary melting, thereby improving the structural stability of the LED light-emitting device.
  • soldering area includes a tin layer.
  • soldering area includes a tin layer and does not include gold and nickel; and the electrode includes gold and nickel.
  • the electrode includes a tin layer and does not include gold and nickel; and the soldering area includes gold and nickel.
  • the bonding area includes a tin layer and does not include gold and nickel; the electrode includes a tin layer but does not include gold and nickel.
  • the LED light-emitting device as described above, wherein the LED light-emitting device further includes a high-reflective bracket arranged on the carrier, the high-reflective bracket is a groove-shaped structure, and includes an integrally formed wall part and a base part;
  • the area in the welding area that is in contact with the electrode of the LED chip is a chip contact area, and the base portion covers an area in the welding area excluding the chip contact area;
  • the LED chip is located in the high reflection bracket.
  • the material of the high-reflective bracket includes resin and filler, and the resin is any one of polyester, unsaturated polyester, and epoxy;
  • the filler includes at least one of titanium dioxide or glass fiber;
  • the filler includes at least one of the titanium dioxide, silicon dioxide, and the glass fiber;
  • the filler includes at least one of the titanium dioxide, the silicon dioxide, and the aluminum oxide.
  • the area of the conductive layer corresponding to the chip contact area is a conductive layer contact area
  • the top surface of the conductive layer contact area and the top surface of the base portion are located on the same plane.
  • the base part has an isolation part located between the two welding areas.
  • the two soldering areas include two chip contact areas, the two chip contact areas correspond to the two conductive layer contact areas, and the two conductive layer contact areas Each has an extension part embedded in the isolation part.
  • the shape of the LED chip is a square; the limiting protrusion includes at least one L-shaped protrusion, and the L-shaped protrusion is distributed beside at least one corner of the LED chip .
  • the shape of the LED chip is a square; the limiting protrusion is a square ring-shaped protrusion, and the square ring-shaped protrusion surrounds four sides of the LED chip.
  • the embodiment of the present invention also provides a method for manufacturing an LED light-emitting device, wherein the method for manufacturing the LED light-emitting device includes:
  • the carrier including a conductive layer
  • the conductive layer includes a copper layer and a welding area provided on the copper layer, and any one of the welding area and the electrode includes a tin layer, and does not include gold and nickel.
  • the manufacturing method of the LED light-emitting device includes providing a carrier including a conductive layer and an LED chip, and bonding the electrodes of the LED chip with flip-chip and conductively connected to the conductive layer; wherein the conductive layer includes a copper layer and is disposed on the conductive layer.
  • the soldering area on the copper layer, any one of the soldering area and the electrode includes a tin layer, and does not include gold and nickel. After the above steps, the tin layer can replace the gold layer and the nickel layer, and there is no need to provide the gold layer and the nickel layer in the welding area, thereby saving the cost.
  • the tin layer itself provides tin for soldering the electrode of the LED chip and the soldering area, without Use solder paste to provide tin. Since no solder paste is used, impurities other than tin in the solder paste can be avoided at the junction between the electrode of the LED chip and the soldering area after soldering, and the above-mentioned impurities are not easy to clean, and the tin layer can be provided to the soldering area compared to the solder paste.
  • a higher proportion of tin improves the adhesion between the electrode of the LED chip and the soldering area; and the melting point of pure tin is higher than that of tin paste, so there will be no secondary melting during reflow soldering, thereby improving the LED light-emitting device
  • the structural stability
  • the bonding area includes a tin layer and does not include gold and nickel; and the electrode includes gold and nickel.
  • soldering area includes a tin layer and does not include gold and nickel; and the electrode includes a tin layer and does not include gold and nickel.
  • At least one electrode of the LED chip is attached to the flux
  • soldering flux does not have tin.
  • the high-reflection support being arranged on the carrier;
  • the high-reflective bracket is a groove-shaped structure, including an integrally formed wall part and a base part; the area in the soldering area that is in contact with the electrode of the LED chip is a chip contact area, and the base part covers the The area of the bonding area excluding the chip contact area.
  • Figure 1 is a schematic diagram of the structure of the welding zone in the related technology
  • FIG. 2 is a schematic diagram of the structure of the welding zone in the embodiment of the present invention.
  • Figure 3 is a scanning electron micrograph (SEM) of the welding area and electrode of the carrier in the embodiment of the present invention
  • Fig. 4 is an energy dispersive X-ray spectrum (EDX) obtained by performing spectral analysis on the first analysis point in Fig. 3;
  • EDX energy dispersive X-ray spectrum
  • Figure 5 is a scanning electron micrograph (SEM) of the welding area and electrode of the carrier in the related scheme
  • Fig. 6 is an energy dispersive X-ray spectrogram (EDX) obtained by performing spectral analysis on the second analysis point in Fig. 5;
  • EDX energy dispersive X-ray spectrogram
  • FIG. 7 is a schematic diagram of the structure of the first highly reflective bracket in the embodiment of the present invention.
  • Figure 8 is a top view of Figure 7;
  • FIG. 9 is a schematic diagram of the structure of the highly reflective support and the conductive layer when no LED chip is provided in the embodiment of the present invention.
  • FIG. 10 is a schematic diagram of the structure when the conductive layer in FIG. 9 is provided with solder paste;
  • FIG. 11 is a schematic diagram of the structure when the LED chip is arranged in FIG. 9;
  • FIG. 12 is a schematic diagram of the structure when the conductive layer is provided with flux in the embodiment of the present invention.
  • FIG. 13 is a schematic diagram of the structure when the LED chip is arranged in FIG. 12;
  • FIG. 14 is a schematic structural diagram of a second type of highly reflective bracket provided in an embodiment of the present invention.
  • Figure 15 is a top view of Figure 14;
  • FIG. 16 is a schematic view of the structure of the conductive layer in FIG. 14 provided with flux;
  • FIG. 17 is a schematic diagram of the structure when the LED chip is arranged in the second type of highly reflective bracket in FIG. 14;
  • FIG. 18 is a schematic diagram of the structure when the LED chip is arranged in the third type of highly reflective bracket
  • Figure 19 is a top view of Figure 18;
  • 20 is a schematic diagram of the structure when the mixture of the bonding glue and the tin layer provided in the embodiment of the present invention overflows;
  • Figure 21 is a top view of Figure 20;
  • FIG. 22 is a schematic structural diagram of an extension portion of a conductive layer provided in an embodiment of the present invention.
  • Figure 23 is a top view of Figure 22;
  • FIG. 24 is a schematic diagram of a structure of a limiting protrusion provided in an embodiment of the present invention.
  • Figure 25 is a top view of Figure 24;
  • FIG. 26 is a schematic diagram of the structure of the LED chip provided in the embodiment of the present invention when the position of the LED chip is shifted; FIG.
  • Figure 27 is a top view of Figure 26;
  • Figure 29 is a top view of Figure 28;
  • FIG. 30 is a schematic diagram of the flow of reflow soldering in an embodiment of the present invention.
  • FIG. 31 is a schematic structural diagram of an LED chip provided by an embodiment of the present invention.
  • Electrode 610: Light-transmitting element substrate
  • 611 First surface
  • 612 Fourth area
  • 620 N-type semiconductor layer
  • 630 Light-emitting layer
  • 631 The third area; 640: P-type semiconductor layer;
  • 671 the first opening
  • 672 the second opening
  • 680 the second N electrode; 681: the first area;
  • the LED light-emitting device includes a carrier 1 and an LED chip.
  • the carrier 1 includes a conductive layer
  • the conductive layer includes a copper layer 5 and a bonding area, that is, the second bonding area 4 in FIG.
  • the welding area 4 covers the copper layer 5 to prevent the copper layer 5 from being oxidized by air.
  • the second welding area 4 includes a nickel layer 41 and a gold layer 42.
  • the electrode of the LED chip is fixed to the second soldering area 4 by the solder paste, thereby electrically connecting with the conductive layer, so that the LED light-emitting device can emit light normally.
  • gold and nickel are relatively expensive, and the provision of the nickel layer 41 and the gold layer 42 increases the cost of the LED light-emitting device.
  • solder paste is used as a bonding glue and the electrodes of the LED chip are welded and fixed in the second welding area through the tin powder dissolved in the solder paste. 4 on.
  • the flux in the solder paste cannot be removed during the process of fixing the LED chip on the second soldering area 4, otherwise the solder powder will not be dissolved in the solder paste and damage the solder paste The performance stability.
  • any one of the soldering area of the LED light emitting device and the electrode of the LED chip provided by the embodiment of the present invention includes a tin layer, and does not include gold and nickel.
  • the nickel layer and the gold layer are replaced by the tin layer, which saves costs.
  • the LED light emitting device includes a carrier 1 and an LED chip arranged on the carrier.
  • the carrier 1 includes a conductive layer; the LED chip is arranged on the carrier, and the electrode of the LED chip is flip-chip. Bonded and conductively connected to the conductive layer; wherein the conductive layer includes a copper layer 5 and a first welding area 3 provided on the copper layer 5. Any one of the first welding area 3 and the electrode includes a tin layer and does not include Gold and nickel.
  • the first welding zone 3 here is the welding zone in the embodiment of the present invention.
  • the carrier 1 may be a circuit board with a conductive layer, wherein the conductive layer may be a copper-plated layer, and the conductive layer includes a first bonding area 3 for conductive connection with the LED chip.
  • the LED chip is a semiconductor device and a light-emitting component of the LED light-emitting device.
  • the LED chip generally includes two electrodes 61. One or two electrodes of the LED chip can be connected to the first welding area 3 on the conductive layer.
  • the LED chip is a blue light or ultraviolet light (UV) chip, that is, the light emitted by the LED chip 6 is blue light or ultraviolet light.
  • the LED chip 6 may be a flip-chip LED chip. As shown in FIG.
  • the LED chip 6 includes a light-transmitting element substrate 610, an N-type semiconductor layer 620, a light-emitting layer 630, and a P-type semiconductor layer 640.
  • the two electrodes 61 electrically connected to the first pad 3 of the conductive layer are the second N electrode 680 and the second P electrode 690 shown in FIG. 31.
  • the light-transmitting element substrate 610 may be sapphire, ceramic, resin, or thermosetting epoxy resin (EMC).
  • the light-transmitting element substrate 610 includes a first surface 611.
  • the N-type semiconductor layer 620 is disposed on the surface 611 and connected to the light-transmitting element substrate 610.
  • the light-emitting layer 630 is disposed on the N-type semiconductor layer 620 and the light-emitting layer 630 contacts the N-type semiconductor layer 620 to form a third region 631.
  • the P-type semiconductor layer 640 is disposed on the light-emitting layer 630, the light-emitting layer 630 and the P-type semiconductor 640 expose a fourth region 612 of the N-type semiconductor layer 620, and the fourth region 612 is not covered by the light-emitting layer 630 and the P-type semiconductor layer 640 In the region, the P-type semiconductor layer 640 contacts the N-type semiconductor layer to form the light-emitting layer 630.
  • the first N electrode 650 is disposed on the fourth region 612 of the N-type semiconductor layer 620, and the first N electrode 650 is not connected to the P-type semiconductor layer 640, and the first N electrode 650 is in contact with the N-type semiconductor layer 620 to form a first junction ⁇ 651.
  • the first P electrode 660 is provided on the P-type semiconductor layer 640.
  • the first N electrode 650 and the first P electrode 660 may be indium tin oxide (ITO) and indium zinc oxide (IZO), respectively.
  • the first insulating layer 670 is disposed on the N-type semiconductor 620 between the first N electrode 650 and the first P electrode 660 to insulate the two electrodes from each other.
  • the first insulating layer 670 completely covers the left and right sides of the first N electrode 650, and also completely covers the left and right sides of the first P electrode 660, so that the first N electrode 650 and the first P The electrodes 660 are not electrically connected to each other.
  • the first insulating layer 670 covers the lower side of the first N electrode 650 and forms at least one first opening 671, and the first insulating layer 670 covers the lower side of the first P electrode 660 and forms at least one second opening 672.
  • the at least one first opening 671 and the at least one second opening 672 may be a cylindrical shape extending in a vertical direction, where the vertical direction is the vertical direction in FIG. 31.
  • the second N electrode 680 is disposed on the first N electrode 650 and the first insulating layer 670. A part of the second N electrode 680 passes through the first opening 671 and is electrically connected to the first N electrode 650.
  • the second N electrode 680 includes one The surface area of the first area 681 is larger than the surface area of the first joining surface 651.
  • the second P electrode 690 is disposed on the first P electrode 660 and the first insulating layer 670. A part of the second P electrode 690 passes through the second opening 672 and is electrically connected to the first P electrode 660.
  • the second P electrode 690 The second area 691 includes a second area 691, and the second area 691 is smaller than a third area 631 on the light-emitting layer 630, that is, the surface area of the second area 691 is smaller than the surface area of the third area 631.
  • the second N electrode 680 and the second P electrode 690 have almost the same size (same surface area) from a bottom view, and the second N electrode 680 and the second P electrode 690 are electrically connected and fixed to the conductive layer.
  • the second N electrode 680 may also have a size smaller than the size of the second P electrode 690 or larger than the size of the second P electrode 690.
  • the LED chip material may be nitride semiconductor, and the general formula of the nitride semiconductor is In x Al y Ga 1-xy N (0 ⁇ x, 0 ⁇ y, x+y ⁇ 1),
  • the LED chip material can also be a mixed crystal formed by mixing B, P, and As with a nitride semiconductor.
  • the N-type semiconductor layer and the P-type semiconductor layer are not particularly limited to a single layer or multiple layers.
  • the nitride semiconductor layer is a light-emitting layer having an active layer, and the active layer is a single (SQW) or multiple quantum well structure (MQW). Below, examples of nitride semiconductor layers are shown.
  • the base layer of a nitride semiconductor such as a buffer layer can be a low-temperature grown thin film GaN and GaN layer; as an N-type nitride semiconductor layer, it can be an N-type contact layer laminated with Si-doped GaN
  • the P-type nitride semiconductor layer can be a P-type multilayer film layer with Mg-doped InGaN/AlGaN layered and The structure of Mg-doped GaN P-type contact layer.
  • the light-emitting layer (active layer) of the nitride semiconductor may have a quantum well structure including a well layer or a barrier layer and a well layer.
  • the nitride semiconductor used in the active layer may be doped with P-type impurity, but through undoped or N-type impurity doping, the light-emitting element can be made into a high-output device.
  • Al is contained in the well layer, it is possible to obtain a wavelength shorter than the wavelength of the band gap energy of GaN, 365 nm.
  • the wavelength of light emitted from the active layer can be adjusted according to the purpose, application, etc.
  • the composition of the well layer is that InGaN is best used in the visible light and near-ultraviolet regions.
  • the composition of the barrier layer is preferably GaN or InGaN.
  • Specific examples of the film thickness of the barrier layer and the well layer are 1 nm or more and 30 nm or less and 1 nm or more and 20 nm or less, and can be used as a single quantum well structure with a single well layer, or a multiple quantum well structure of plural well layers such as a barrier layer.
  • the LED light emitting device emits white light
  • a blue or ultraviolet LED chip can be used in combination with a packaging gel mixed with yellow phosphors to mix blue and yellow light into white light.
  • the phosphor used in the encapsulating gel of the LED chip is not limited to the phosphor of a specific color, and can be red phosphor, green phosphor or yellow phosphor, or two or more different colors of phosphor
  • the composition even if the same is red, green or yellow phosphor, it can also be composed of one or more different materials; specifically, taking red phosphor as an example, it may include CASN or SCASN series, such as CaAlSiN 3 :Eu 2+ , (Sr,Ca)AlSiN 3 :Eu 2+ , (SrCa)S:Eu 2+ , CaS:Eu 2+ , Sr 3 Si(ON) 5 :Eu 2+ ; KSF series, such as K 2 SiF 6 :Mn 4+ ; It also includes red phosphors with AE 1-z S 1-y Se y : zA as the general formula, where AE is at least one alkaline earth metal selected from M
  • any one of the first welding area 3 and the electrode of the conductive layer includes a tin layer, and does not include gold and nickel, that is, at this time, the first welding area 3 uses a tin layer instead of the gold layer 42 and nickel in the related solution.
  • the role of layer 41 is that tin is cheaper than gold and nickel, so this solution can save costs.
  • the method of flip chip bonding of the electrodes of the LED chip may be reflow soldering.
  • reflow soldering only flux is needed to help and promote the soldering process, and the tin layer of the first soldering area 3 itself provides the tin for soldering the electrodes of the LED chip and the first soldering area 3, without the need to use solder paste.
  • solder paste Since solder paste is not used, there is no need to use solder paste to provide tin.
  • solder paste is not used, impurities other than tin in the solder paste can be avoided to remain at the junction between the electrode 61 of the LED chip and the first soldering area 3 after soldering, and The above-mentioned impurities are not easy to clean, and the tin layer of the first bonding area 3 can provide a higher proportion of tin to the first bonding area 3 than a solder paste, which improves the adhesion between the electrode of the LED chip and the first bonding area 3 In addition, the melting point of pure tin is higher than that of tin paste. During reflow soldering, there will be no secondary melting, which improves the structural stability of the LED light-emitting device.
  • any one of the first welding area 3 and the electrode includes a tin layer, and does not include gold and nickel. That is, the first bonding area 3 includes a tin layer and does not include gold and nickel; and/or, the electrode includes a tin layer and does not include gold and nickel.
  • the tin layer is a part of the first welding zone 3. This arrangement can prevent the copper layer covered by the first welding area 3 from being oxidized by air before welding with the LED chip electrode 61.
  • tin can be provided as a conductive component, and the flux can be a flux that does not contain conductive components such as tin.
  • the tin plating method of tin plating on the copper layer 5 of the first welding zone 3 can be used to set the tin layer on the copper layer 5 of the first welding zone 3, that is, the copper layer 5 in the welding zone passes through The chemical reaction is coated with pure tin.
  • the tin plating method adopts tin, the process is simple, the phenomenon of plate explosion is not easy to occur, and the thickness of the tin layer is uniform.
  • Fig. 3 is a scanning electron micrograph (SEM) of the contact area between the carrier 1 and the electrode 61 in an embodiment of the present invention
  • Fig. 5 is a scanning electron micrograph (SEM) of the contact area between the carrier 1 and the electrode 61 in a related scheme
  • the above-mentioned carrier 1 is a PCB carrier.
  • the LED chip electrode 61 and Between the copper layer 5 is the welding area of this scheme, namely the first welding area 3.
  • the chip electrode 61 and the copper layer Between 5 is the welding area of the related scheme, that is, the second welding area 4.
  • Performing spectral analysis on the first analysis point 31 of the first welding zone 3 can obtain the energy dispersive X-ray spectrogram as shown in Fig. 4, and analyzing the energy dispersive X-ray spectrogram as shown in Fig. 4 can be obtained as shown in Table 1.
  • Table 1 shows that the first welding zone 3 is the first
  • the elements at analysis point 31 include C, Cu, and Sn, where C mainly comes from the flux, Cu mainly comes from the first solder zone 3, and Sn mainly comes from the tin layer.
  • Performing spectral analysis on the second analysis point 43 of the second welding zone 4 can obtain the energy dispersive X-ray spectrogram as shown in Fig. 6, and analyzing the energy dispersive X-ray spectrogram as shown in Fig. 6 can be obtained as shown in Table 2.
  • the element types and the proportions of the elements at the second analysis point 43 of the second welding zone 4 of the carrier 1 and the electrode 61 provided by the related solutions shown in Table 2 show that the second analysis point of the second welding zone 4 Elements at 43 include C, P, Ni, Cu, Sn, where C mainly comes from flux, Ni mainly comes from the nickel layer 41, Cu mainly comes from the second pad 4 and solder paste, and Sn mainly comes from solder paste .
  • the LED light-emitting device provided by the embodiment of the present invention further includes a high-reflective bracket 7 arranged on the carrier 1, and the LED chip 6 is located in the high-reflective bracket 7.
  • the LED chip 6 is fixed on the first welding area 3 in the high-reflective bracket 7 by soldering with a tin layer. With this arrangement, the light emitted by the LED chip 6 can be reflected by the high-reflective bracket 7 so as to achieve the effect of increasing the light intensity emitted by the LED chip 6.
  • the material of the high reflection bracket 7 is shown in Table 3, including resin and filler, where the resin can be any of polyester, unsaturated polyester, and epoxy.
  • the filler includes at least one of titanium dioxide (TiO 2 ) or glass fiber (Glass fiber); when the resin is an unsaturated polyester, the filler includes titanium dioxide (TiO 2 ), silicon dioxide ( At least one of SiO 2 ) and glass fiber (Glass fiber); when the resin is epoxy resin, the filler includes titanium dioxide (TiO 2 ), silicon dioxide (SiO 2 ), and aluminum oxide (Al 2 O 3 ). At least one of.
  • the reflectance of silver to the visible light is 94%-98%, and the tin to the visible light
  • the reflectivity of the high-reflection bracket 7 is between 77% and 81%, and the reflectivity of the high-reflection bracket 7 to the visible light is between 95% and 97%.
  • the general way of reflecting the light emitted by the LED chip 6 in the general LED light-emitting device is to include a silver layer in the soldering area of the conductive layer 2 shown in Fig. 9, and the LED chip 6 is soldered and fixed to the conductive layer 2.
  • the light emitted by the LED chip 6 is reflected by the silver layer.
  • solder paste 8 is required.
  • solder paste As the bonding glue, solder paste or dispensing solder paste is applied to the soldering area shown in FIG.
  • the electrode 61 of the LED chip 6 is soldered and fixed in the soldering area by the tin powder dissolved in the solder paste 8.
  • the secondary tin melting is likely to occur, and the electrode 61 of the LED chip 6 is easily separated from the soldering area, causing the LED light-emitting device to fail.
  • the first soldering area 3 of the conductive layer 2 of the LED light-emitting device provided in this embodiment includes a tin layer, and the electrode 61 of the LED chip 6 is soldered
  • the conductive layer only the solder flux 9 is used as the bonding glue, that is, the solder flux 9 is dispensed on the conductive layer 2 as shown in FIG. 9, and there is no need to use the solder paste 8 to provide tin, and the tin layer itself can provide tin.
  • the melting point of pure tin is higher than that of the solder paste 8, and no secondary melting occurs during reflow soldering, which improves the structural reliability of the LED light-emitting device.
  • the LED chip 6 can be a flip chip or a formal chip, and the specific conditions can be selected according to actual needs.
  • the LED chip 6 may be various types of LED chips, such as mini LEDs and small-pitch light-emitting diodes.
  • the LED chip 6 is a flip chip. Compared with the normal chip, the flip chip can further increase the light extraction rate of the LED light-emitting device and increase the light intensity of the LED light-emitting device.
  • the LED chip 6 may use the chip shown in Table 4.
  • the LED chip is an ultra-fine-pitch light-emitting diode (mini LED), that is, when the LED light-emitting device is a mini LED light-emitting device, since the size of the ultra-fine-pitch light-emitting diode is extremely small, the size of the corresponding dispenser is also Very small, and the size of the tin particles in the solder paste cannot be spotted from the outlet of the dispenser.
  • the dispenser cannot be used to add the solder paste, and only brushing can be used. Add solder paste by machine brushing.
  • the flux used in this embodiment can be dispensed by a dispenser, thereby improving the accuracy of LED chip bonding.
  • the LED chip 6 includes two electrodes 61, and the conductive layer 2 of the carrier 1 includes two first welding areas 3 corresponding to the above two electrodes 61 one-to-one.
  • Each first welding area 3 includes a chip contact area
  • the chip contact area is the area where the first welding area 3 contacts the electrode 61 of the LED chip 6, and the area of the conductive layer 2 corresponding to each chip contact area is the conductive layer contact area 21, that is, the part of the conductive layer 2 that is in contact with the electrode 61 of the LED chip 6 is the conductive layer contact area 21.
  • the upper end of the conductive layer contact area 21 is a chip contact area.
  • the size of the conductive layer contact area 21 can be designed with reference to the size of the LED chip 6.
  • Table 5 lists the sizes of three different models of LED chips; as shown in Table 5, the sizes of the three different models of LED chips 6 are in order It is 580 ⁇ m*1170 ⁇ m, 660 ⁇ m*760 ⁇ m, 510 ⁇ m*1020 ⁇ m. Among them, 580 ⁇ m, 660 ⁇ m, and 510 ⁇ m are the longitudinal dimensions of the three different types of LED chips 6 in sequence, which can be characterized by a in Figure 8; 1170 ⁇ m, 760 ⁇ m, and 1020 ⁇ m are the horizontal dimensions of the three different types of LED chips in order. The size, the lateral size can be characterized by b in FIG. 8.
  • Table 5 The brightness of the LED light-emitting devices in the first, second and third options
  • the size of each electrode 61 of the LED chip 6 is 580 ⁇ m*1170 ⁇ m, the size of each electrode 61 of the LED chip 6 is 530 ⁇ m*450 ⁇ m; when the size of the LED chip 6 is 660 ⁇ m*760 ⁇ m, the size of each electrode 61 of the LED chip 6 is 460 ⁇ m*205 ⁇ m or 500 ⁇ m*225 ⁇ m. When the size of the LED chip 6 is 510 ⁇ m*1020 ⁇ m, the size of each electrode 61 of the LED chip 6 is 435 ⁇ m*365 ⁇ m.
  • the size of the conductive layer contact area 21 can be slightly smaller than the size of the electrode 61 of the LED chip 6, so that the electrode 61 of the LED chip 6 can completely cover the chip contact area on the conductive layer contact area 21, that is, the electrode of the LED chip 6. 61 completely covers the tin layer on the conductive layer contact area 21, thereby improving the adhesion (pushing force) between the electrode 61 of the LED chip 6 and the conductive layer contact area 21.
  • the size of each conductive layer contact area 21 is 205 ⁇ m*435 ⁇ m, and the interval between two conductive layer contact areas 21 is 150 ⁇ m.
  • 205 ⁇ m is the lateral dimension of the conductive layer contact area 21, which can be characterized by c in FIG. 15, and 435 ⁇ m is the longitudinal dimension of the conductive layer contact area 21, which can be characterized by d in FIG. 15; two conductive layer contact areas The interval between 21 can be characterized by e in FIG. 15.
  • the high reflection bracket 7 is a groove-shaped structure, and includes an integrally formed wall portion 71 and a base portion 72.
  • the LED chip 6 is soldered and fixed on the conductive layer 2 in the high-reflection bracket 7 through the tin layer of the first soldering area 3, and the base portion 72 covers the area of the first soldering area 3 except the chip contact area.
  • the light emitted by the LED chip 6 can be reflected by the base 72, compared to the light emitted by the LED chip 6 being reflected by the tin layer in the area other than the chip contact area in the first bonding area 3, due to the high reflection bracket 7
  • the reflectance of visible light is higher than that of the tin layer, so that the structure of the highly reflective bracket 7 provided in this embodiment can increase the intensity of the light emitted from the light outlet of the highly reflective bracket 7, thereby increasing the LED light emitting device emits The intensity of the light.
  • the soldering area of the LED light-emitting device in the first solution is a silver layer, and the base 72 does not cover areas other than the chip contact area; the soldering area of the LED light-emitting device in the second solution is a tin layer, and the base 72 does not cover the other than the chip The area other than the contact area; the soldering area of the LED light-emitting device in the third solution is a tin layer, and the base 72 covers the area except the chip contact area.
  • the average brightness of the light emitted by the LED light-emitting devices in the first, second, and third solutions are 21.59, 14.66, and 21.37, respectively.
  • the average brightness of the light emitted by the LED light-emitting devices in the second and third solutions is the same as the solution
  • the ratio of the average brightness of the light emitted by the LED light-emitting device in No. 1 is 67.91% and 99.00%.
  • the brightness of the light emitted by the LED light-emitting device in the third solution is much greater than that of the LED light-emitting device in the second solution, indicating that when the base 72 covers the soldering area except the chip contact area, it can be Greatly improve the brightness of the light emitted by the LED lighting device.
  • the brightness of the LED light-emitting device in the third solution is relatively close to that of the LED light-emitting device in the first solution, it indicates that when the base 72 covers the area other than the chip contact area, the soldering area formed by the silver layer is replaced with The soldering area formed by the tin layer has little effect on the brightness of the light emitted by the LED light-emitting device. Therefore, the silver layer can be replaced with a tin layer, thereby reducing the cost of the LED light-emitting device, avoiding secondary melting during soldering, and improving the structural reliability of the LED light-emitting device.
  • the base portion 72 includes an isolation portion 721 located between the two first welding areas 3. As shown in FIG. 18, in a specific embodiment, the isolation portion 721, the base portion 72 can separate the two first welding areas 3 into the positive electrode welding area and the negative electrode welding area, and the positive electrode welding area and the LED chip 6 The positive electrode is electrically connected, and the negative electrode welding area is electrically connected to the negative electrode of the LED chip 6.
  • the top surface of the conductive layer contact area 21 and the top surface of the base portion 72 are in the same plane.
  • the top surface of the isolation portion 721 of the base portion 72 is higher than the top surface of the conductive layer contact region 21. This arrangement can prevent the mixture of die-bonding glue and tin layer from overflowing during the welding process.
  • the isolation portion 721 when the top surface of the isolation portion 721 is not higher than the top surface of the conductive layer contact area 21, the mixture of the bonding glue and the tin layer on the two conductive layer contact areas 21 located on the left and right sides flows to The isolation portion 721 makes the two conductive layer contact areas 21 on the left and right sides conductively connected, resulting in a short circuit of the LED light-emitting device.
  • the mixture of the bond glue and the tin layer on the two conductive layer contact areas 21 on the left and right sides can be blocked from flowing to the isolation portion 721, avoiding the left and right sides.
  • the two conductive layer contact areas 21 are electrically connected, so as to avoid short-circuit failure.
  • the LED light-emitting device will be deformed when subjected to external forces such as bending or impact, especially when the LED light-emitting device is used as an edge-type backlight.
  • the LED light-emitting device has a long and narrow structure and is subjected to bending. It is easy to crack when external forces such as folding and impact are applied. Therefore, in order to enhance the ability of the LED light-emitting device to resist bending and impact deformation, in the present embodiment, the two conductive layer contact areas 21 on the left and the right are provided with extensions 22 embedded in the isolation portion 721.
  • the base 72 is provided with a limiting protrusion 722 located on the periphery of the LED chip 6.
  • a limiting protrusion 722 located on the periphery of the LED chip 6.
  • the LED light emitting device when the position of the LED chip 6 does not shift, the LED light emitting device will correspond to a specific light intensity at a specific light output angle.
  • the position of the LED chip 6 shifts, at this time, the position of the LED chip 6 relative to the high-reflective support 7, the first welding area 3 and other structures has changed, and the light emitted by the LED chip 6 passes through the high-reflective support 7, the first welding
  • the parameters such as the angle and intensity of the output of the structure such as zone 3 will also change after reflection, which causes the light-type distortion of the light emitted by the LED light-emitting device.
  • the shape of the LED chip 6 is square
  • the limiting protrusion 722 includes at least one L-shaped protrusion
  • the L-shaped protrusions are distributed on the LED At least one corner of the chip.
  • the limiting protrusion 722 includes four L-shaped protrusions distributed at the four corners of the LED chip 6. This arrangement has less influence on the light emitted by the LED chip 6 and can prevent the LED chip 6 from shifting in the four directions of up, down, left, and right in FIG. 14.
  • the shape of the LED chip 6 is square; the limiting protrusion 722 is a square ring-shaped protrusion, and the square ring-shaped protrusion surrounds the four sides of the LED chip 6. Sides.
  • the embodiment of the present invention also provides a method for manufacturing an LED light-emitting device.
  • the method for manufacturing an LED light-emitting device provided by the embodiment of the present invention first provides a carrier, and the carrier includes a conductive layer;
  • an LED chip is provided, and the electrodes of the LED chip are flip-chip bonded and conductively connected to the conductive layer;
  • the conductive layer includes a copper layer and a welding area provided on the copper layer, and any one of the welding area and the electrode includes a tin layer, and does not include gold and nickel.
  • any one of the soldering area and the electrode of the carrier includes a tin layer, and does not include gold and nickel, that is, the gold layer and the nickel layer in the related scheme are replaced by the tin layer, and compared with gold and nickel, tin is cheaper and can be save costs.
  • solder paste to provide tin.
  • the tin layer itself can provide tin, and the flux is better than solder paste.
  • Cheap can reduce costs. Since no solder paste is used, impurities other than tin in the solder paste can be avoided at the junction between the electrode of the LED chip and the soldering area after soldering, and the above-mentioned impurities are not easy to clean, and the tin layer can be provided to the soldering area compared to the solder paste.
  • the bonding force between the electrode of the LED chip and the soldering area is 50G-60G, which is much greater than that of the LED chip when the nickel layer and the gold layer are arranged on the carrier and the solder paste is used for connection in the related solution.
  • the adhesion between the electrode and the welding area (25G-35G).
  • any one of the soldering area and the electrode of the carrier includes a tin layer, and does not include gold and nickel. That is, the soldering area includes a tin layer and does not include nickel and gold; and/or, the electrode includes a tin layer and does not include gold and nickel.
  • the soldering area includes a tin layer and does not include nickel and gold; and/or, the electrode includes a tin layer and does not include gold and nickel.
  • the method further includes the following steps:
  • At least one electrode of the LED chip is attached to the flux
  • Adopting the glue dispensing method of the glue machine compared with the brushing method of the tin brushing machine, has the advantages of high precision and not easy to brush, so that the LED chip can be solidified, that is, at least one electrode of the LED chip is attached to the helper. When the flux is applied, the LED chip will not shift, so that the light pattern of the light emitted by the LED light-emitting device will not shift.
  • the LED chip is an ultra-fine-pitch light-emitting diode (mini LED)
  • the size of the corresponding dispenser is also extremely small, and the size of the tin particles in the solder paste cannot be
  • the exit point of the glue machine is out, and when the solder paste is used as the solid crystal glue, the glue can not be added by the glue dispensing method, and the solder paste can only be added by the brushing method of the tin brushing machine.
  • the flux used in this embodiment can be dispensed by a dispenser, thereby improving the accuracy of LED chip bonding.
  • the step of performing reflow soldering on the electrode and the soldering area so that at least one electrode of the LED chip is soldered and fixed in the soldering area includes:
  • the manufacturing method of the LED light-emitting device further includes: providing a high-reflection support, the high-reflection support is arranged on the carrier; the high-reflection support is a groove-shaped structure, including an integrally formed wall and Base: The area in the soldering area that is in contact with the electrode of the LED chip is the chip contact area, and the base covers the area of the soldering area except the chip contact area.
  • the light emitted by the LED chip can be reflected by the high-reflection bracket, and the brightness of the light-emitting direction of the LED light-emitting device can be improved.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif électroluminescent à DEL et son procédé de fabrication, se rapportant au domaine technique des DEL, qui sont utilisés pour résoudre les problèmes techniques de coût élevé et de stabilité structurelle médiocre de dispositifs électroluminescents à DEL. Le dispositif électroluminescent à DEL comprend : un support (1), le support (1) comprenant une couche conductrice (2) ; et une puce à DEL (6), la puce à DEL (6) étant disposée sur le support (1), une électrode (61) de la puce à DEL (6) étant liée de manière conductrice à la couche conductrice et connectée de manière conductrice à celle-ci (2), la couche conductrice (2) comprend une couche de cuivre (5) et une zone de brasage (3) disposée sur la couche de cuivre (5), et l'une quelconque de la zone de brasage (3) et de l'électrode (61) comprend une couche d'étain et ne comprend pas d'or et de nickel. Le dispositif électroluminescent à DEL et son procédé de fabrication sont utilisés pour réduire le coût de dispositifs électroluminescents à DEL et améliorer la stabilité structurelle de dispositifs électroluminescents à DEL.
PCT/CN2020/133281 2019-12-02 2020-12-02 Dispositif électroluminescent à del et son procédé de fabrication WO2021110019A1 (fr)

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US201962942359P 2019-12-02 2019-12-02
US62/942,359 2019-12-02
US202063048343P 2020-07-06 2020-07-06
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