JP6542509B2 - 蛍光体及びそれを含む発光素子パッケージ - Google Patents
蛍光体及びそれを含む発光素子パッケージ Download PDFInfo
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- JP6542509B2 JP6542509B2 JP2014085275A JP2014085275A JP6542509B2 JP 6542509 B2 JP6542509 B2 JP 6542509B2 JP 2014085275 A JP2014085275 A JP 2014085275A JP 2014085275 A JP2014085275 A JP 2014085275A JP 6542509 B2 JP6542509 B2 JP 6542509B2
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- phosphor
- light
- light emitting
- emitting device
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 231
- 150000004767 nitrides Chemical class 0.000 claims description 28
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 27
- 238000001228 spectrum Methods 0.000 claims description 17
- 229910052712 strontium Inorganic materials 0.000 claims description 14
- 102100032047 Alsin Human genes 0.000 claims description 7
- 101710187109 Alsin Proteins 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 76
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- 239000000463 material Substances 0.000 description 28
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 238000000465 moulding Methods 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
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- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
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- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
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- 229910018229 Al—Ga Inorganic materials 0.000 description 1
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- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
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- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
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- 239000010408 film Substances 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- 230000003068 static effect Effects 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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- C09K11/77342—Silicates
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L2924/11—Device type
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Description
120、220 発光構造物
300、400、500、600、700 発光素子パッケージ
900 映像表示装置
Claims (11)
- 第1波長領域の光を放出するシリケート(silicate)系の第1蛍光体と、
第2波長領域の光を放出するナイトライド(nitride)系の第2蛍光体と、
第3波長領域の光を放出するナイトライド系の第3蛍光体とを含み、
前記第1蛍光体乃至第3蛍光体が放出する光が混合されたスペクトルの半値幅は110nm以上であり、
前記シリケート(silicate)系の第1蛍光体は、(Ba、Sr)2SiO4:Euであり、
前記ナイトライド(nitride)系の第2蛍光体は、La3Si6N11:Ceであり、
前記ナイトライド(nitride)系の第3蛍光体は、(Sr、Ca)AlSiN3:Euであり、
前記第1蛍光体、前記第2蛍光体及び前記第3蛍光体は、それぞれ68:30:2の重量%で混合される、蛍光体。 - 前記第1蛍光体は、青色波長領域の光によって励起されて、553nm乃至558nmにピーク波長を有し、86nm乃至88nmの半値幅を有する光を放出する、請求項1に記載の蛍光体。
- 前記第2蛍光体は、青色波長領域の光によって励起されて、535nmにピーク波長を有し、半値幅が107nmである光を放出する、請求項1に記載の蛍光体。
- 前記第3蛍光体は、青色波長領域の光によって励起されて、625nmにピーク波長を有し、半値幅が81nmである光を放出する、請求項1に記載の蛍光体。
- 互いに電気的に分離された第1電極及び第2電極と、
前記第1電極及び第2電極にそれぞれ電気的に接続され、第1波長領域の光を放出する少なくとも一つの発光素子と、
前記発光素子から放出された青色波長領域の光によって励起されて第2波長領域の光を放出し、第1波長領域の光を放出するシリケート系の第1蛍光体、第2波長領域の光を放出するナイトライド系の第2蛍光体、及び第3波長領域の光を放出するナイトライド系の第3蛍光体を含み、前記第1蛍光体乃至第3蛍光体が放出する光が混合されたスペクトルの半値幅は110nm以上である蛍光体と、を含み、
前記シリケート(silicate)系の第1蛍光体は、(Ba、Sr)2SiO4:Euであり、
前記ナイトライド(nitride)系の第2蛍光体は、La3Si6N11:Ceであり、
前記ナイトライド(nitride)系の第3蛍光体は、(Sr、Ca)AlSiN3:Euであり、
前記第1蛍光体、前記第2蛍光体及び前記第3蛍光体は、それぞれ68:30:2の重量%で混合される、発光素子パッケージ。 - 前記発光素子から放出された前記青色波長領域の光と、前記青色波長領域の光によって励起された前記第1蛍光体、前記第2蛍光体及び前記第3蛍光体が放出する光とが混合されて白色光をなし、前記白色光に含まれる緑色光の色度座標(chromaticity coordinates)は、CIEx:0.296〜0.316であり、CIEy:0.606〜0.626である、請求項5に記載の発光素子パッケージ。
- 前記発光素子から放出された前記青色波長領域の光と、前記青色波長領域の光によって励起された前記第1蛍光体、前記第2蛍光体及び前記第3蛍光体が放出する光とが混合されて白色光をなし、前記白色光に含まれる赤色光の色度座標は、CIEx:0.624〜0.644であり、CIEy:0.322〜0.342である、請求項5に記載の発光素子パッケージ。
- 前記発光素子から放出された前記青色波長領域の光と、前記青色波長領域の光によって励起された前記第1蛍光体、前記第2蛍光体及び前記第3蛍光体が放出する光とが混合されて白色光をなし、前記白色光に含まれる青色光の色度座標は、CIEx:0.142〜0.162であり、CIEy:0.044〜0.064である、請求項5に記載の発光素子パッケージ。
- 前記蛍光体は、請求項2から4のいずれかに記載の蛍光体を含む、請求項5に記載の発光素子パッケージ。
- 前記蛍光体は、前記発光素子パッケージのキャビティの体積の10.5%〜11.5%のボリューム(volume)で充填される、請求項5から9のいずれかに記載の発光素子パッケージ。
- 前記蛍光体は、前記キャビティの体積の11.0%のボリューム(volume)で充填される、請求項10に記載の発光素子パッケージ。
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KR1020130056027A KR20140135556A (ko) | 2013-05-16 | 2013-05-16 | 형광체 및 이를 포함하는 발광소자 패키지 |
KR10-2013-0056027 | 2013-05-16 | ||
KR10-2013-0117219 | 2013-10-01 | ||
KR1020130117219A KR102131309B1 (ko) | 2013-10-01 | 2013-10-01 | 형광체 및 이를 포함하는 발광소자 패키지 |
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