CN107910420A - A kind of UV LED and preparation method - Google Patents
A kind of UV LED and preparation method Download PDFInfo
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- CN107910420A CN107910420A CN201711371840.9A CN201711371840A CN107910420A CN 107910420 A CN107910420 A CN 107910420A CN 201711371840 A CN201711371840 A CN 201711371840A CN 107910420 A CN107910420 A CN 107910420A
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- 238000010894 electron beam technology Methods 0.000 claims description 9
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- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000004062 sedimentation Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
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- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
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- 229910052710 silicon Inorganic materials 0.000 claims description 3
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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Abstract
The present invention relates to a kind of UV LED and preparation method.The device includes luminescent layer, the P-type layer positioned at luminescent layer side and the N-type layer positioned at luminescent layer opposite side, it is spaced apart in the P-type layer and is equipped with some through holes, each through hole is from P-type layer downward through luminescent layer, N electrode is equipped with each through hole, extend P-type layer and form N-terminal electrode in one end of N electrode, the other end is electrically connected with N-type layer, and the outer circumferential surface of the N electrode makes N electrode insulate respectively between P-type layer, luminescent layer covered with the first insulating layer, the first insulating layer.Since N electrode is arranged in through hole, the electrode tip of N-terminal electrode and P-type layer is located at homonymy, easy to wiring, propagated at the same time easy to light, and since the first insulating layer and reflective N electrode exist, the light of luminescent layer is reflected by N electrode, realize light scattering in maximum plane, improve light extraction efficiency.
Description
Technical field
The present invention relates to LED technology field, more particularly to a kind of UV LED and preparation method.
Background technology
Optoelectronic semiconductor component plays an increasingly important role in our life and scientific research.In recent years,
Based on having been obtained in practice more and more for the nitride semiconductor LED (LED) of representative with gallium nitride (GaN)
Using the LED of deep ultraviolet C-band (UVC) has also been used as excitation source to realize special source.And grinding for LED
Study carefully and apply, people are at most concerned with LED internal quantum efficiency and external quantum efficiency.Although the interior quantum effect of current UVC bases LED
Rate has reached 60%, but due to the AlGaN material 6 (such as Fig. 1) that UVC uses high Al contents, is influenced be subject to optical polarization, only
There is the light no more than 12% to project LED to enter in air.This greatly affected the raising of UVC base LED component efficiency,
Hinder its further application.
In recent years, researcher has done substantial amounts of research to how to improve light extraction efficiency, it is concentrated mainly on following side
Face：(1) 2 D photon crystal is made in LED surface to modulate the behavior of light, to meet the needs [Jonathan of maximum outgoing
J.Wierer,Jr,Aurelien David,Mischa M.Megens,Nature Photonics,Vol.3,(2009.]；(2)
Using the self-organizing behavior of oxide (such as silica, titanium oxide) in GaN surfaces growing nano-rod or hole array, change GaN
Surface texture [Min-An Tsai, Peichen Yu, C.L.Chaoetal, IEEE Photonics Technology
Letters,VOL.21,(2009]；Day-ShanLiu,Tan-WeiLin,Bing-WenHuang,Appl.Phys.Lett.94,
2009]；(3) Ag grids are done on GaN surfaces, Ag and Quantum Well couple, light output intensity increase [Kun-Ching Shen,
Cheng-Yen Chen,Hung-Lu Chen,Appl.Phys.Lett.,93,(2008)]；(4) using Woelm Alumina as template,
ICP etching change GaN surface roughness, raising light extraction efficiency [Keunjoo KIM, Iaeho CHOI, Tae Sung BAE,
Japanese Journal of Applied Physics,Vol.46,2007:6682-6684]；(5) using laser lift-off, receive
Rice coining and natural lithography method strengthen the roughness on GaN surfaces, with improve light extraction efficiency [T.Fujii, Y.Gao,
R.Sharma, E.L.Hu, S.P.DenBaars, and S.Nakamura, Appl.Phys.Lett., Vol.84, (2004)]
(6) ejection efficiency [Michael R.Krames, Oleg B.Shchekin, Regina are improved by designing LED chip structure
Mueller-Mach,Gerd O.Mueller,Ling Zhou,Gerard Harbers,and M.George Craford,
Journal of Display Technology,Vol.3,(2007)].From the point of view of current research conditions, various nanometers are utilized
Technology changes the roughness on GaN surfaces, is the common method for improving GaN surfaces light extraction efficiency, but existing method is required for
More complicated operating process and technical equipment, belongs to surface light propagation light scattering, and limited to the effect of UVC wave bands, although respectively
State scholar has carried out on the surface nano-structure of GaN and the problem by nanostructured enhancing light ejection efficiency largely to grind
Study carefully, but at present, also without propose a kind of simple technique, low damage, to the three-dimensional light scattering structure of UVC wave band high-efficiency bight-dippings.
The content of the invention
The purpose of the present invention is in view of the deficienciess of the prior art, providing that a kind of technique is simpler, light extraction is efficient
Deep-UV light-emitting diode and preparation method.
To achieve these goals, the technical solution that a kind of UV LED of the present invention is taken：
A kind of UV LED, including luminescent layer, the P-type layer positioned at luminescent layer side and another positioned at luminescent layer
The N-type layer of side, the surface of the P-type layer are equipped with exposed surface, and exposed surface is equipped with the P electrode being electrically connected with P-type layer, in P-type layer
It is spaced apart and is equipped with some through holes, for each through hole from P-type layer downward through luminescent layer, each through hole is interior is equipped with N electrode, N electricity
One end of pole extends P-type layer and forms N-terminal electrode, and the other end is electrically connected with N-type layer, and the outer circumferential surface of the N electrode is covered with the
One insulating layer, the first insulating layer make N electrode insulate respectively between P-type layer, luminescent layer.
During present invention work, positive pole and P electrode are connected, power cathode and N-terminal electrode are connected, are then electrified to,
Luminescent layer shines, and a light part for luminescent layer gets into the air through N-type layer, and another part of light is irradiated through the first insulating layer
Onto N electrode, the light of irradiation is reflexed to N-type layer by N electrode, is entered back into air.
Compared with prior art, beneficial effects of the present invention are：Since N electrode is arranged in through hole, N-terminal electrode and p-type
The electrode tip of layer is located at homonymy, easy to lead, while is propagated easy to light, and since the first insulating layer and reflective N electrode are deposited
The light of luminescent layer is reflected by N electrode, is realized light scattering in maximum plane, is improved light extraction efficiency.
The second insulating layer is covered on P-type layer exposed surface between adjacent P electrode and N electrode, second insulating layer makes N electric
Insulate with P electrode pole.Second insulating layer can be effectively prevented from N electrode and P electrode and connect and short-circuit.
First insulating layer and the second insulating layer are SiO2Insulating layer, the first insulating layer and the second thickness of insulating layer are
50nm~200nm.
The through hole periodicity regular distribution or random distribution in P-type layer, the through hole for diameter be 200nm~
The circular hole or section inscribed circle of 5000nm is the square hole or delthyrium or hexagon ring of 200nm~5000nm.Through hole can be rational
N electrode is set, so that N electrode reflexes to light in air.
The P electrode and N electrode are Ni, Al, Ti, Au, Cr or Ag metal.
The cross sectional shape of the N-terminal electrode includes but not limited to circular, square, fan-shaped and interdigitation, N-terminal electrode are
Ni, Al, Ti, Au, Cr, Ag, Mg or Pd metal.
The cross sectional shape of the P electrode includes but not limited to circular, square, fan-shaped and interdigitation.
Present invention also offers a kind of UV LED preparation method, the technical solution taken：
A kind of UV LED preparation method, comprises the following steps：
Step 1：Material growth, on sapphire, carborundum or silicon substrate, is set using metal organic chemical vapor deposition
It is standby, cushion is grown, then grows N-type layer, luminescent layer and P-type layer successively on the buffer layer；
Step 2：The first insulating layer is prepared, using electron-beam vapor deposition method or PECVD sedimentations on the exposed surface of P-type layer
Generate the SiO of 100nm thickness2Insulating layer；
Step 3：P electrode is processed, first is insulated using photolithography method or electron beam exposure method or nano-imprinting method
Layer etching forms P electrode；
Step 4：Through hole is processed, etches to be formed for setting the logical of N electrode by the first insulating layer using dry etching method
Hole, the through hole run through luminescent layer from P-type layer etching；
Step 5：N electrode is prepared, deposits to form Al gold with sputtering technology or electron beam evaporation method or thermal evaporation method
The N electrode of category, reuses the SiO that electron-beam vapor deposition method or PECVD sedimentations generate 100nm thickness on the outer circumferential surface of N electrode2Absolutely
Edge layer；
Step 6：N electrode is set, N electrode is set into through hole, one end of N electrode is electrically connected with N-type layer, it is another
End extends to P-type layer.
Compared with prior art, beneficial effects of the present invention are：Since N electrode is arranged in through hole, N-terminal electrode and p-type
The electrode tip of layer is located at homonymy, easy to wiring, while is propagated easy to light, and since the first insulating layer and reflective N electrode are deposited
The light of luminescent layer is reflected by N electrode, is realized light scattering in maximum plane, is improved light extraction efficiency.
Brief description of the drawings
Fig. 1 is the structure diagram of background technology.
Fig. 2 is the structure diagram of the present invention.
Wherein, 1 is luminescent layer, and 2 be P-type layer, and 201 be through hole, and 202 be the second insulating layer, and 3 be N-type layer, and 4 be N electrode,
401 be N-terminal electrode, and 402 be the first insulating layer, and 5 be P electrode, and 6 be AlGaN material.
Embodiment
As described in Figure 2, be a kind of UV LED, including luminescent layer 1, positioned at 1 side of luminescent layer P-type layer 2 with
And the N-type layer 3 positioned at 1 opposite side of luminescent layer, it is spaced apart in P-type layer 2 and is equipped with some through holes 201, through hole 201 was in 2 last week of P-type layer
Phase property regular distribution or random distribution, through hole 201 is the circular hole of 200nm~5000nm for diameter or section inscribed circle is 200nm
The square hole or delthyrium or hexagon ring of~5000nm, through hole 201 can reasonably set N electrode 4, and each through hole 201 is from P-type layer 2
Downward through luminescent layer 1, N electrode 4 is provided with each through hole 201, one end of N electrode 4 extends P-type layer 2 and forms N-terminal electrode
401, the cross sectional shape of N-terminal electrode 401 includes but not limited to circular, square, sector and interdigitation, N-terminal electrode 401 and is
Ni, Al, Ti, Au, Cr, Ag, Mg or Pd metal, the other end are connected with N-type layer 3, and the outer circumferential surface of N electrode 4 is covered with the first insulation
Layer 402, the first insulating layer 402 makes N electrode 4 insulate respectively between P-type layer 2, luminescent layer 1, and the surface of P-type layer 2 is equipped with exposed
Face, exposed surface are equipped with the P electrode 5 being electrically connected with P-type layer 2, and P electrode 5 and N electrode 4 are Ni, Al, Ti, Au, Cr or Ag metal,
The cross sectional shape of P electrode 5 includes but not limited to circular, square, fan-shaped and interdigitation, in order to by P-type layer 2 and external power
Connect, cover the second insulating layer 202 on 2 exposed surface of P-type layer between adjacent P electrode 5 and N electrode 4, the second insulating layer 202 makes N
Electrode 4 insulate with P electrode 5, and the second insulating layer 202 can be effectively prevented from N electrode 4 and P electrode 5 and connect and short-circuit, and first is exhausted
402 and second insulating layer 202 of edge layer is SiO2Insulating layer, the first insulating layer 402 and 202 thickness of the second insulating layer be 50nm~
200nm。
During work, positive pole and 2 terminals of P-type layer are connected, power cathode and N-terminal electrode 401 are connected, Ran Houtong
Electricity, luminescent layer 1 shine, and a light part for luminescent layer 1 gets into the air through N-type layer 3, and another part of light is through the first insulation
Layer 402 is irradiated in N electrode 4, and the light of irradiation is reflexed to N-type layer 3 by N electrode 4, is entered back into air.
Corresponding with a kind of above-mentioned UV LED, the present invention also provides a kind of UV LED production method
Comprise the following steps：
Step 1：Material growth, on sapphire, carborundum or silicon substrate, is set using metal organic chemical vapor deposition
It is standby, cushion is grown, then grows N-type layer 3, luminescent layer 1 and P-type layer 2 successively on the buffer layer；
Step 2：The first insulating layer is prepared, using electron-beam vapor deposition method or PECVD sedimentations on the exposed surface of P-type layer 2
Generate the SiO of 100nm thickness2Insulating layer；
Step 3：P electrode is processed, first is insulated using photolithography method or electron beam exposure method or nano-imprinting method
The etching of layer 402 forms P electrode 5；
Step 4：Through hole is processed, etches to be formed for setting N electrode 4 by the first insulating layer 402 using dry etching method
Through hole 201, through hole 201 from P-type layer 2 etching runs through luminescent layer 1；
Step 5：N electrode is prepared, deposits to form Al gold with sputtering technology or electron beam evaporation method or thermal evaporation method
The N electrode 4 of category, reuses the SiO that electron-beam vapor deposition method or PECVD sedimentations generate 100nm thickness on the outer circumferential surface of N electrode2
Insulating layer；
Step 6：N electrode is set, N electrode 4 is set in through hole 201, the one end and N-type layer 3 for making N electrode 4 are connected,
The other end extends to P-type layer 2.
The invention is not limited in above-described embodiment, on the basis of technical solution disclosed by the invention, the skill of this area
Art personnel are according to disclosed technology contents, it is not necessary to which performing creative labour can make one to some of which technical characteristic
A little to replace and deform, these are replaced and deformation is within the scope of the present invention.
Claims (9)
- A kind of 1. UV LED, it is characterised in that：P-type layer including luminescent layer, positioned at luminescent layer side and it is located at The N-type layer of luminescent layer opposite side, the surface of the P-type layer are equipped with exposed surface, and exposed surface is equipped with the P electricity being electrically connected with P-type layer Pole, is spaced apart in P-type layer and is equipped with some through holes, and each through hole downward through luminescent layer, is equipped with from P-type layer in each through hole N electrode, one end of N electrode extend P-type layer and form N-terminal electrode, and the other end is electrically connected with N-type layer, the outer circumferential surface of the N electrode Covered with the first insulating layer, the first insulating layer makes N electrode insulate respectively between P-type layer, luminescent layer.
- A kind of 2. UV LED according to claim 1, it is characterised in that：Between adjacent P electrode and N electrode The second insulating layer is covered on P-type layer exposed surface, second insulating layer makes N electrode insulate with P electrode.
- A kind of 3. UV LED according to claim 2, it is characterised in that：First insulating layer and second exhausted Edge layer is SiO2Insulating layer.
- A kind of 4. UV LED according to claim 3, it is characterised in that：First insulating layer and second exhausted Edge layer thickness is 50nm~200nm.
- A kind of 5. UV LED according to claim 4, it is characterised in that：Through hole cycle in P-type layer Property regular distribution or random distribution, the through hole for diameter be the circular hole of 200nm~5000nm or section inscribed circle be 200nm~ The square hole or delthyrium or hexagon ring of 5000nm.
- A kind of 6. UV LED according to claim 5, it is characterised in that：The P electrode and N electrode for Ni, Al, Ti, Au, Cr or Ag metal.
- A kind of 7. UV LED according to claim 6, it is characterised in that：The cross sectional shape of the N-terminal electrode Including but not limited to circular, square, fan-shaped and interdigitation, N-terminal electrode are Ni, Al, Ti, Au, Cr, Ag, Mg or Pd metal.
- A kind of 8. deep-UV light-emitting diode according to claim 7, it is characterised in that：The cross sectional shape of the P electrode Including but not limited to circular, square, fan-shaped and interdigitation.
- 9. a kind of preparation method of deep-UV light-emitting diode as claimed in claim 8, it is characterised in that including following step Suddenly：Step 1：Material growth, it is raw using metal organic chemical vapor deposition equipment on sapphire, carborundum or silicon substrate Cushion is grown, then grows N-type layer, luminescent layer and P-type layer successively on the buffer layer；Step 2：The first insulating layer is prepared, is generated using electron-beam vapor deposition method or PECVD sedimentations on the exposed surface of P-type layer The SiO of 100nm thickness2Insulating layer；Step 3：P electrode is processed, is carved the first insulating layer using photolithography method or electron beam exposure method or nano-imprinting method Erosion forms P electrode；Step 4：Through hole is processed, the first insulating layer is etched into the through hole to be formed for setting N electrode using dry etching method, The through hole runs through luminescent layer from P-type layer etching；Step 5：N electrode is prepared, deposits to form Al metals with sputtering technology or electron beam evaporation method or thermal evaporation method N electrode, reuses the SiO that electron-beam vapor deposition method or PECVD sedimentations generate 100nm thickness on the outer circumferential surface of N electrode2Insulation Layer；Step 6：N electrode is set, N electrode is set into through hole, one end of N electrode is electrically connected with N-type layer, the other end prolongs Reach P-type layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020070022A1 (en) * | 2018-10-02 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Component having an enlarged active zone, and production method |
| CN112820809A (en) * | 2020-12-30 | 2021-05-18 | 华灿光电（浙江）有限公司 | Ultraviolet light-emitting diode chip and preparation method of P electrode thereof |
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