TWM496847U - Light emitting module - Google Patents

Light emitting module Download PDF

Info

Publication number
TWM496847U
TWM496847U TW103220719U TW103220719U TWM496847U TW M496847 U TWM496847 U TW M496847U TW 103220719 U TW103220719 U TW 103220719U TW 103220719 U TW103220719 U TW 103220719U TW M496847 U TWM496847 U TW M496847U
Authority
TW
Taiwan
Prior art keywords
transparent substrate
epitaxial
light
guiding members
illuminating
Prior art date
Application number
TW103220719U
Other languages
Chinese (zh)
Inventor
Shao-Ying Ding
Guan-Jie Huang
Jing-En Huang
Yi-Ru Huang
Original Assignee
Genesis Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genesis Photonics Inc filed Critical Genesis Photonics Inc
Priority to TW103220719U priority Critical patent/TWM496847U/en
Publication of TWM496847U publication Critical patent/TWM496847U/en

Links

Landscapes

  • Led Device Packages (AREA)

Description

發光模組Light module

本新型是有關於一種發光模組,特別是指一種發光二極體(LED)之發光模組。The invention relates to a lighting module, in particular to a lighting module of a light emitting diode (LED).

已知的發光二極體(LED)模組,主要包含形成有p-n接面磊晶結構的LED晶片、電連接該LED晶片的電極,以及用於封裝LED晶片等元件的封裝體。該LED模組封裝後通常為半圓球型態,亦即各個LED模組會形成一顆顆的半圓球突起結構,導致每一LED模組封裝後的體積較大。而且要製作成燈具時,必須將一顆顆的LED模組排列於一燈板上,另外還必須設置一可供LED模組之光線通過的玻璃基板,導致LED模組組裝成燈具時較為麻煩。Known light-emitting diode (LED) modules mainly include an LED chip formed with a p-n junction epitaxial structure, an electrode electrically connected to the LED wafer, and a package for packaging components such as an LED chip. The LED module is usually semi-spherical after being packaged, that is, each LED module forms a semi-spherical protrusion structure, which results in a larger volume after packaging each LED module. Moreover, when manufacturing a luminaire, it is necessary to arrange a plurality of LED modules on a light board, and a glass substrate through which the light of the LED module passes must be disposed, which makes the assembly of the LED module into a luminaire more troublesome. .

另外,上述的LED晶片中的p-n接面磊晶結構,實際上可以設置有數個,該等磊晶結構彼此間可透過電極串接連接,以一磊晶結構的額定電壓為3伏特為例,當串接三個時,則模組整體的額定電壓為9伏特,當串接9個時,則模組整體的額定電壓為27伏特,藉此可形成高壓LED模組。但傳統的高壓LED模組同樣會有上述封裝後體積較大,組裝不便之缺點,因此其結構有待改良。In addition, the pn junction epitaxial structure in the above LED chip may be actually provided in a plurality, and the epitaxial structures are connected to each other through the electrodes in series, and the rated voltage of an epitaxial structure is 3 volts as an example. When three connected in series, the overall rated voltage of the module is 9 volts. When nine are connected in series, the overall rated voltage of the module is 27 volts, thereby forming a high voltage LED module. However, the conventional high-voltage LED module also has the disadvantages of large volume and inconvenient assembly after the above-mentioned package, and therefore its structure needs to be improved.

因此,本新型之目的,即在提供一種方便封裝、封裝體積小,可提升產品競爭力的發光模組。Therefore, the purpose of the present invention is to provide a light-emitting module that is convenient for packaging, has a small package size, and can enhance product competitiveness.

於是,本新型發光模組,包含:至少一發光單元、一封裝膠體、一第二透光基板,以及數個第二導接件。Therefore, the novel light emitting module comprises: at least one light emitting unit, one encapsulant, a second transparent substrate, and a plurality of second guiding members.

該發光單元包括一第一透光基板、數個磊晶結構,及數個第一導接件。該第一透光基板具有一磊晶面,及一相對於該磊晶面的表面。該等磊晶結構位於該磊晶面上,每一磊晶結構具有一n型披覆層、一發光層,及一p型披覆層。該等第一導接件將該等磊晶結構串聯、並聯或串並聯。The light emitting unit comprises a first transparent substrate, a plurality of epitaxial structures, and a plurality of first guiding members. The first transparent substrate has an epitaxial surface and a surface opposite to the epitaxial surface. The epitaxial structures are located on the epitaxial surface, and each epitaxial structure has an n-type cladding layer, a light-emitting layer, and a p-type cladding layer. The first guiding members connect the epitaxial structures in series, in parallel or in series and in parallel.

該封裝膠體由該第一透光基板的該表面包覆該第一透光基板及該等磊晶結構。該第二透光基板位於該第一透光基板之該表面的一側,並覆蓋於該封裝膠體上。該等第二導接件選擇性地電連接於與其相對應的該第一導接件,並分別對外形成至少一電極。The encapsulant covers the first transparent substrate and the epitaxial structures from the surface of the first transparent substrate. The second transparent substrate is located on a side of the surface of the first transparent substrate and covers the encapsulant. The second guiding members are selectively electrically connected to the first guiding members corresponding thereto, and respectively form at least one electrode.

本新型之功效:該發光單元設置有該等磊晶結構,並透過該封裝膠體結合於該第二透光基板上,且該第二透光基板為薄板片狀,使本新型整體封裝後的體積小,且於後續製作成燈具時,具有方便製作之優點,可提升產品競爭力。The illuminating unit is provided with the epitaxial structure, and is coupled to the second transparent substrate through the encapsulant, and the second transparent substrate is in the form of a thin plate, so that the novel package is integrally packaged. It is small in size and has the advantage of convenient production when it is subsequently made into a luminaire, which can enhance the competitiveness of the product.

1‧‧‧發光單元1‧‧‧Lighting unit

11‧‧‧第一透光基板11‧‧‧First transparent substrate

111‧‧‧磊晶面111‧‧‧Leading surface

112‧‧‧表面112‧‧‧ surface

12‧‧‧磊晶結構12‧‧‧ Epitaxial structure

121‧‧‧n型披覆層121‧‧‧n type coating

122‧‧‧發光層122‧‧‧Lighting layer

123‧‧‧p型披覆層123‧‧‧p type coating

13‧‧‧第一導接件13‧‧‧First guide

14‧‧‧絕緣層14‧‧‧Insulation

141‧‧‧第一絕緣部141‧‧‧First insulation

142‧‧‧第二絕緣部142‧‧‧Second insulation

2‧‧‧封裝膠體2‧‧‧Package colloid

21‧‧‧螢光材料21‧‧‧Fluorescent materials

3‧‧‧第二透光基板3‧‧‧Second transparent substrate

4‧‧‧第二導接件4‧‧‧Second guide

41‧‧‧電極41‧‧‧Electrode

本新型之其他的特徵及功效,將於參照圖式的 實施方式中清楚地呈現,其中:圖1是本新型發光模組的一第一實施例的剖視示意圖;及圖2是本新型發光模組的一第二實施例的剖視示意圖。Other features and effects of the novel will be referred to the drawings. The embodiment is clearly shown in FIG. 1 is a cross-sectional view of a first embodiment of the present invention; and FIG. 2 is a cross-sectional view of a second embodiment of the novel lighting module.

在本新型被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.

參閱圖1,本新型發光模組之第一實施例包含:一發光單元1、一封裝膠體2、一第二透光基板3,以及數個第二導接件4。Referring to FIG. 1 , a first embodiment of the novel light emitting module includes: a light emitting unit 1 , an encapsulant 2 , a second transparent substrate 3 , and a plurality of second guiding members 4 .

該發光單元1包括一第一透光基板11、數個磊晶結構12、數個第一導接件13,以及一絕緣層14。The light emitting unit 1 includes a first transparent substrate 11 , a plurality of epitaxial structures 12 , a plurality of first guiding members 13 , and an insulating layer 14 .

該第一透光基板11具有一磊晶面111,及一相對於該磊晶面111的表面112。該第一透光基板11例如藍寶石基板。The first transparent substrate 11 has an epitaxial surface 111 and a surface 112 opposite to the epitaxial surface 111. The first transparent substrate 11 is, for example, a sapphire substrate.

該等磊晶結構12彼此間隔地位於該磊晶面111上,每一磊晶結構12具有由鄰近至遠離該磊晶面111而披覆的一n型披覆層121、一發光層122與一p型披覆層123。以氮化鎵系的發光二極體(LED)為例,該n型披覆層121與該p型披覆層123可分別為n型與p型的氮化鎵材料。該發光層122又稱為主動層(Active Layer),可以為多重量子井(MQW)結構。該發光層122材料可包含氮化鎵、氮化銦鎵、氮化鋁鎵等等。但實施時不須特別限定該等磊晶結 構12之各層材料。The epitaxial structures 12 are spaced apart from each other on the epitaxial surface 111. Each of the epitaxial structures 12 has an n-type cladding layer 121 and a light-emitting layer 122 that are adjacent to and away from the epitaxial surface 111. A p-type cladding layer 123. Taking a gallium nitride-based light-emitting diode (LED) as an example, the n-type cladding layer 121 and the p-type cladding layer 123 may be n-type and p-type gallium nitride materials, respectively. The luminescent layer 122 is also referred to as an active layer and may be a multiple quantum well (MQW) structure. The luminescent layer 122 material may comprise gallium nitride, indium gallium nitride, aluminum gallium nitride, or the like. However, it is not necessary to specifically limit the epitaxial junctions during implementation. Structure 12 layers of material.

該等第一導接件13為可導電的金屬,並用於將該等磊晶結構12串聯、並聯或串並聯。具體而言,本實施例之位於最左側的該第一導接件13接觸與其連接的該磊晶結構12的p型披覆層123。位於最右側的該第一導接件13接觸與其連接的該磊晶結構12的n型披覆層121。在中間的兩個第一導接件13中,皆同時位於任兩相鄰的磊晶結構12上,且每一第一導接件13同時接觸其中一磊晶結構12的n型披覆層121與另一磊晶結構12的p型披覆層123。The first guiding members 13 are electrically conductive metals and are used to connect the epitaxial structures 12 in series, in parallel or in series and in parallel. Specifically, the first guiding member 13 located at the leftmost side of the embodiment contacts the p-type cladding layer 123 of the epitaxial structure 12 connected thereto. The first guiding member 13 located at the rightmost side contacts the n-type cladding layer 121 of the epitaxial structure 12 connected thereto. The two first guiding members 13 in the middle are simultaneously located on any two adjacent epitaxial structures 12, and each of the first guiding members 13 simultaneously contacts the n-type coating layer of one of the epitaxial structures 12. 121 and p-type cladding layer 123 of another epitaxial structure 12.

該封裝膠體2由該第一透光基板11的該表面112包覆該第一透光基板11及該等磊晶結構12。該封裝膠體2可例如矽膠、環氧樹脂等可透光並適用於封裝之材料。進一步地,該封裝膠體2中可摻混一螢光材料21,該螢光材料21可吸收該等磊晶結構12的光而受激發光,螢光材料21受到激發而發出的光可以與磊晶結構12的光混色。舉例來說,該等磊晶結構12可發出藍光,該螢光材料21可受激發出黃光。The encapsulant 2 covers the first transparent substrate 11 and the epitaxial structures 12 from the surface 112 of the first transparent substrate 11 . The encapsulant 2 can be made of a material such as silicone, epoxy or the like which is permeable to light and suitable for encapsulation. Further, a fluorescent material 21 can be blended in the encapsulant 2, and the fluorescent material 21 can absorb the light of the epitaxial structure 12 and be excited, and the fluorescent material 21 can be excited to emit light. The light color of the crystal structure 12 is mixed. For example, the epitaxial structures 12 can emit blue light, and the phosphor material 21 can be excited to emit yellow light.

該絕緣層14包括數個分別位於任兩相鄰的磊晶結構12間的第一絕緣部141,以及數個分別位於該等第一導接件13間或第一導接件13的一側的第二絕緣部142。所述第一絕緣部141將該等磊晶結構12隔開,可避免磊晶結構12之間接觸而短路。所述第二絕緣部142將該等第一導接件13隔開,同時也避免該等第二導接件4接觸位於中間的該兩第一導接件13。The insulating layer 14 includes a plurality of first insulating portions 141 respectively located between any two adjacent epitaxial structures 12, and a plurality of sides respectively located between the first guiding members 13 or the first guiding members 13 The second insulating portion 142. The first insulating portion 141 separates the epitaxial structures 12 to avoid short-circuiting between the epitaxial structures 12 . The second insulating portion 142 separates the first guiding members 13 and also prevents the second guiding members 4 from contacting the two first guiding members 13 located in the middle.

該第二透光基板3位於該第一透光基板11之該表面112的一側,並覆蓋於該封裝膠體2上。該第二透光基板3例如為玻璃基板。The second transparent substrate 3 is located on one side of the surface 112 of the first transparent substrate 11 and covers the encapsulant 2 . The second light-transmitting substrate 3 is, for example, a glass substrate.

該等第二導接件4選擇性地電連接於與其相對應的該第一導接件13。該等第二導接件4皆有局部穿過該絕緣層14並接觸其中第一導接件13。該等第二導接件4分別對外形成至少一電極41,可連接外部電力,使外部電力可經由該等第二導接件4與第一導接件13傳導至磊晶結構12,使磊晶結構12可將電能轉換成光。該等第二導接件4為可導電之金屬,並可與一圖未示出的轉接基板焊接結合,可應用於覆晶(Flip Chip)封裝技術。The second guiding members 4 are selectively electrically connected to the first guiding members 13 corresponding thereto. The second guiding members 4 partially pass through the insulating layer 14 and contact the first guiding member 13 therein. The second guiding members 4 respectively form at least one electrode 41 externally, and can connect external power, so that external power can be transmitted to the epitaxial structure 12 via the second guiding members 4 and the first guiding members 13 to Crystal structure 12 converts electrical energy into light. The second connecting members 4 are electrically conductive metals and can be soldered to a switching substrate not shown, and can be applied to Flip Chip packaging technology.

綜上所述,藉由該發光單元1設置有該等磊晶結構12,可透過該等第一導接件13串聯及/或並聯,使本新型該發光模組整體的額定電壓可以有多種不同變化,可因應使用需求作變化設計。而且該發光單元1藉由該封裝膠體2結合於該第二透光基板3上,且該第二透光基板3為薄板片狀,使本新型整體封裝後的體積小,並且屬於一種晶片級封裝(Chip Scale Package,簡稱CSP)。且將本新型製作為燈具時,該第二透光基板3可作為原本就必須設置於燈具中的玻璃基板,亦即,本新型之發光單元1封裝後已直接與燈具中的玻璃基板結合,於後續製作燈具時,具有方便製作之優點。故本新型的創新結構具有簡化封裝製程、體積小之優點,可提升產品競爭力。In summary, the light-emitting unit 1 is provided with the epitaxial structures 12, and the first conductive members 13 can be connected in series and/or in parallel, so that the overall rated voltage of the light-emitting module of the present invention can be various. Different changes can be designed according to the needs of the use. The light-emitting unit 1 is bonded to the second transparent substrate 3 by the encapsulant 2, and the second transparent substrate 3 is in the form of a thin plate, which is small in size after being packaged as a whole, and belongs to a wafer level. Chip Scale Package (CSP). When the present invention is made into a luminaire, the second transparent substrate 3 can be used as a glass substrate which must be disposed in the luminaire, that is, the illuminating unit 1 of the present invention is directly combined with the glass substrate in the luminaire after being packaged. It has the advantage of convenient production in the subsequent production of lamps. Therefore, the novel innovative structure has the advantages of simplifying the packaging process and small size, and can enhance product competitiveness.

參閱圖2,本新型發光模組之第二實施例,與該 第一實施例的結構大致相同,不同的地方在於,本實施例包含數個發光單元1,該等發光單元1彼此間透過數個第二導接件4連接;具體來說,任兩相鄰發光單元1同時與其中一第二導接件4連接,進而使該等發光單元1串聯、並聯或串並聯。該封裝膠體2由每一發光單元1的該第一透光基板11的該表面112包覆該第一透光基板11及該等磊晶結構12。該第二透光基板3位於該等第一透光基板11之該表面112的一側,並且同時涵蓋對應該等發光單元1。Referring to FIG. 2, a second embodiment of the novel lighting module, and the The structure of the first embodiment is substantially the same, except that the embodiment includes a plurality of light-emitting units 1 connected to each other through a plurality of second guide members 4; specifically, any two adjacent The light-emitting unit 1 is simultaneously connected to one of the second guide members 4, thereby making the light-emitting units 1 connected in series, in parallel or in series and in parallel. The encapsulant 2 covers the first transparent substrate 11 and the epitaxial structures 12 from the surface 112 of the first transparent substrate 11 of each of the light-emitting units 1 . The second transparent substrate 3 is located on one side of the surface 112 of the first transparent substrate 11 and simultaneously covers the corresponding light emitting unit 1.

本實施例於該第二透光基板3上設置該數個發光單元1。同時形成數個發光單元1的好處為,製程上較快速且方便,且在後續應用時,例如置作成燈具時,可依燈具所須的發光單元1數量,於該第二透光基板3的適當位置進行切割,以切割取得所須預定數量之發光單元1,如此一來,製作燈具時,該等發光單元1已預先排列設置於該第二透光基板3上,而可省去傳統必須將一顆顆獨立的LED模組一一排列並固定於一燈板上的缺失。In the embodiment, the plurality of light emitting units 1 are disposed on the second transparent substrate 3 . The advantage of forming the plurality of light-emitting units 1 at the same time is that the process is faster and more convenient, and in the subsequent application, for example, when the lamp is set as a lamp, the number of the light-emitting units 1 required by the lamp can be used in the second light-transmissive substrate 3 Cutting the appropriate position to cut the required number of the light-emitting units 1 so that when the lamps are made, the light-emitting units 1 are pre-arranged on the second transparent substrate 3, and the conventional necessity is eliminated. The individual LED modules are arranged one by one and fixed on a light board.

惟以上所述者,僅為本新型之實施例而已,當不能以此限定本新型實施之範圍,即大凡依本新型申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本新型專利涵蓋之範圍內。However, the above description is only for the embodiments of the present invention, and the scope of the present invention cannot be limited thereto, that is, the simple equivalent changes and modifications made by the present patent application scope and the contents of the patent specification are still It is within the scope of this new patent.

1‧‧‧發光單元1‧‧‧Lighting unit

11‧‧‧第一透光基板11‧‧‧First transparent substrate

111‧‧‧磊晶面111‧‧‧Leading surface

112‧‧‧表面112‧‧‧ surface

12‧‧‧磊晶結構12‧‧‧ Epitaxial structure

121‧‧‧n型披覆層121‧‧‧n type coating

122‧‧‧發光層122‧‧‧Lighting layer

123‧‧‧p型披覆層123‧‧‧p type coating

13‧‧‧第一導接件13‧‧‧First guide

14‧‧‧絕緣層14‧‧‧Insulation

141‧‧‧第一絕緣部141‧‧‧First insulation

142‧‧‧第二絕緣部142‧‧‧Second insulation

2‧‧‧封裝膠體2‧‧‧Package colloid

21‧‧‧螢光材料21‧‧‧Fluorescent materials

3‧‧‧第二透光基板3‧‧‧Second transparent substrate

4‧‧‧第二導接件4‧‧‧Second guide

41‧‧‧電極41‧‧‧Electrode

Claims (4)

一種發光模組,包含:至少一發光單元,該發光單元包括:一第一透光基板,具有一磊晶面,及一相對於該磊晶面的表面;數個磊晶結構,位於該磊晶面上,每一磊晶結構具有一n型披覆層、一發光層,及一p型披覆層;及數個第一導接件,將該等磊晶結構串聯、並聯或串並聯;一封裝膠體,由該第一透光基板的該表面包覆該第一透光基板及該等磊晶結構;一第二透光基板,位於該第一透光基板之該表面的一側,並覆蓋於該封裝膠體上;及數個第二導接件,選擇性地電連接於與其相對應的該第一導接件,並分別對外形成至少一電極。An illuminating module includes: at least one illuminating unit, the illuminating unit comprises: a first transparent substrate having an epitaxial surface and a surface opposite to the epitaxial surface; and a plurality of epitaxial structures located at the ray On the crystal plane, each epitaxial structure has an n-type cladding layer, a light-emitting layer, and a p-type cladding layer; and a plurality of first guiding members, the epitaxial structures are connected in series, in parallel or in series and in parallel a first colloidal substrate and the epitaxial structure are covered by the surface of the first transparent substrate; a second transparent substrate is located on a side of the surface of the first transparent substrate And covering the encapsulant; and the plurality of second guiding members are selectively electrically connected to the first guiding member corresponding thereto, and respectively forming at least one electrode. 如請求項1所述的發光模組,其中,該第二透光基板為玻璃基板。The lighting module of claim 1, wherein the second transparent substrate is a glass substrate. 如請求項1或2所述的發光模組,其中,該封裝膠體中摻混一螢光材料。The lighting module of claim 1 or 2, wherein the encapsulant is blended with a fluorescent material. 如請求項1或2所述的發光模組,包含數個發光單元,該等發光單元透過該等第二導接件連接,該封裝膠體由每一發光單元的該第一透光基板的該表面包覆該第一透光基板及該等磊晶結構。The illuminating module of claim 1 or 2, comprising a plurality of illuminating units, wherein the illuminating units are connected by the second guiding members, wherein the encapsulating colloid is used by the first transparent substrate of each illuminating unit The surface is coated with the first transparent substrate and the epitaxial structures.
TW103220719U 2014-11-21 2014-11-21 Light emitting module TWM496847U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103220719U TWM496847U (en) 2014-11-21 2014-11-21 Light emitting module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103220719U TWM496847U (en) 2014-11-21 2014-11-21 Light emitting module

Publications (1)

Publication Number Publication Date
TWM496847U true TWM496847U (en) 2015-03-01

Family

ID=53187418

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103220719U TWM496847U (en) 2014-11-21 2014-11-21 Light emitting module

Country Status (1)

Country Link
TW (1) TWM496847U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112151517A (en) * 2019-06-28 2020-12-29 隆达电子股份有限公司 Package body

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112151517A (en) * 2019-06-28 2020-12-29 隆达电子股份有限公司 Package body
CN112151517B (en) * 2019-06-28 2023-10-20 隆达电子股份有限公司 Package for display

Similar Documents

Publication Publication Date Title
TWI677112B (en) Fabricating method of light emitting diode device
TWI610465B (en) Light-emitting diode assembly and manufacturing method thereof
US9240433B2 (en) Light emitting device
TWI480962B (en) Light-emitting diode package and wafer-level packaging process of a light-emitting diode
US9153622B2 (en) Series of light emitting regions with an intermediate pad
TWI570962B (en) A light emitting unit and a semiconductor light emitting device
JP2016082231A (en) Light-emitting element package and lighting system including the same
JP2014199957A (en) Light-emitting device
JP2016171164A (en) Semiconductor light emission device
TWI532221B (en) Light emitting unit and light emitting module
WO2016093325A1 (en) Light emitting device
TW201409777A (en) LED device
US8637893B2 (en) Light emitting device package, method of manufacturing the same, and lighting system
US8536593B2 (en) LED device having two LED dies separated by a dam
TW201712897A (en) LED chip package
TWI470836B (en) Light-emitting diode package structure
TWM496847U (en) Light emitting module
TWI524501B (en) Led package structure and a method for manufacturing the same
TW201616687A (en) Flip chip light emitting diode packaging
JPWO2013027413A1 (en) Protective element and light emitting device using the same
KR102598476B1 (en) Light emitting device package
TWI713236B (en) Light-emitting diode assembly and manufacturing method thereof
KR102201186B1 (en) Lighting device
KR101448588B1 (en) Light emitting diode and manufacturing method thereof
KR102024296B1 (en) Light emitting device package