CN111640846B - Deep ultraviolet LED packaging and lamp - Google Patents
Deep ultraviolet LED packaging and lamp Download PDFInfo
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- CN111640846B CN111640846B CN202010450976.4A CN202010450976A CN111640846B CN 111640846 B CN111640846 B CN 111640846B CN 202010450976 A CN202010450976 A CN 202010450976A CN 111640846 B CN111640846 B CN 111640846B
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- 238000004806 packaging method and process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 61
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 7
- 230000000087 stabilizing effect Effects 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims description 3
- 241001465382 Physalis alkekengi Species 0.000 claims 1
- 238000000605 extraction Methods 0.000 abstract description 12
- 238000005538 encapsulation Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000002147 killing effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The application provides a dark ultraviolet LED encapsulation, including the base plate, install the box dam on the base plate and install the LED chip on the base plate, during the box dam was located to the LED chip, the box dam had and was used for reflecting into the internal surface that parallel light jetted out with the light that the LED chip sent. According to the deep ultraviolet LED package, light rays emitted by the LED chips are adjusted through reflection of the inner surface of the box dam, so that the light rays emitted by the LED chips form parallel light rays to be emitted, the loss of the light rays in the box dam is reduced, and the light emitting efficiency is improved; and the emitted parallel light can be used more conveniently and efficiently, so that the utilization rate of the light emitted by the deep ultraviolet LED package is further improved, and the light extraction efficiency of the deep ultraviolet LED package is improved.
Description
Technical Field
The application belongs to the technical field of LEDs, and particularly relates to deep ultraviolet LED packaging and a lamp.
Background
The deep ultraviolet light source is an important means for sterilization and disinfection. At present, the high-power deep ultraviolet light source adopts a mercury lamp as a light source, and has high light power and good killing effect. However, mercury lamps contain a large amount of the hazardous substance mercury. According to the Water guarantee convention, China will gradually reduce the production of mercury-containing products in 2020, so that the development of a novel high-power deep ultraviolet light source for replacing a mercury lamp is urgent. The deep ultraviolet LED (Light Emitting Diode, LED for short) is safe and pollution-free, and is the most potential substitute candidate. At present, due to the limitation of a manufacturing process of a deep ultraviolet LED chip, the photoelectric efficiency of a commercial chip is only 3% at most, and the efficiency of a packaged product is low. Deep ultraviolet light also has limitations on packaging structures and materials, and the current substrate and packaging mode mainly focus on ensuring reliability, so that the light extraction efficiency (the proportion of available light emitted by packaging relative to light emitted by a chip) of packaging is limited, and the light extraction efficiency of the current deep ultraviolet LED packaging is low.
Disclosure of Invention
An object of the embodiments of the present application is to provide a deep ultraviolet LED package to solve the problem of low light extraction efficiency of the deep ultraviolet LED package in the related art.
In order to achieve the above purpose, the embodiment of the present application adopts the following technical solutions: the utility model provides a deep ultraviolet LED encapsulation, including the base plate, install in box dam on the base plate and install in LED chip on the base plate, the LED chip is located in the box dam, the box dam has and is used for reflecting into the internal surface that parallel light jetted out with the light that the LED chip sent.
In one embodiment, a cross-sectional line of the inner surface in a thickness direction of the substrate is parabolic.
In one embodiment, one end of the cross-sectional line close to the base plate is in arc transition connection with the base plate, and the radian of a transition arc line between one end of the cross-sectional line close to the base plate and the base plate ranges from 10 degrees to 65 degrees.
In one embodiment, the section line satisfies the following formula: y is ax2+ bx + c, where 0<a<2，-0.5<b<0.5,0 is less than or equal to c and less than or equal to 400, the section line takes the central point of the corresponding area of the box dam on the substrate as the origin, y is the distance from a certain point on the section line to the substrate, and x is the distance from a certain point of the section line to the origin along the direction parallel to the substrate.
In one embodiment, an end of the cross-sectional line away from the substrate is a top end, and the cross-sectional line satisfies the following condition in a direction from the top end to the substrate:
the distance range from the top end is 0-50 microns, a is more than or equal to 0.1 and less than or equal to 0.3, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 200 and less than or equal to 300;
at the distance range of 50-100 microns from the top end, a is more than or equal to 0.3 and less than or equal to 0.7, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 100 and less than or equal to 200;
the distance range from the top end is 100-200 microns, a is more than or equal to 0.7 and less than or equal to 1.1, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 50 and less than or equal to 100;
at the distance range of 200-400 microns from the top end, a is more than or equal to 1.1 and less than or equal to 1.5, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 20 and less than or equal to 50;
at the distance range from the top end to the top end of more than 400 microns, a is more than or equal to 1.5 and less than or equal to 2, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 0 and less than or equal to 20.
In one embodiment, the distance from the top end to the substrate is in the range of 400-600 microns.
In one embodiment, the inner surface is provided with a reflective coating.
In one embodiment, the deep ultraviolet LED package further comprises a lens overlying the dam.
In one embodiment, the deep ultraviolet LED package further includes a zener diode for stabilizing a voltage supplied to the LED chip, the zener diode being mounted on the substrate.
It is another object of this embodiment to provide a luminaire including the deep ultraviolet LED package as described in any of the above embodiments.
One or more technical solutions in the embodiments of the present application have at least one of the following technical effects:
according to the deep ultraviolet LED package provided by the embodiment of the application, light rays emitted by the LED chip are adjusted through reflection of the inner surface of the box dam, so that the light rays emitted by the LED chip form parallel light to be emitted, the loss of the light rays in the box dam is reduced, and the light emitting efficiency is improved; and the emitted parallel light can be used more conveniently and efficiently, so that the utilization rate of the light emitted by the deep ultraviolet LED package is further improved, and the light extraction efficiency of the deep ultraviolet LED package is improved.
The lamp provided by the embodiment of the application uses the deep ultraviolet LED package, the light emitting efficiency is higher, more usable light rays are available, and the light utilization rate is high.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or exemplary technical descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a deep ultraviolet LED package according to an embodiment of the present application.
Fig. 2 is a schematic structural diagram of a deep ultraviolet LED package according to a second embodiment of the present application.
Fig. 3 is a schematic structural diagram of a deep ultraviolet LED package according to a third embodiment of the present application.
Fig. 4 is a schematic structural diagram of a deep ultraviolet LED package according to a fourth embodiment of the present application.
Wherein, in the drawings, the reference numerals are mainly as follows:
100-deep ultraviolet LED packaging;
11-a substrate; 111-slotting;
12-a box dam; 120-an inner surface; 121-section line; 1211-top; 122-transition arc; 123-step groove;
13-an LED chip; 14-a lens; 141-a bonding glue layer;
15-a reflective coating; 16-a light-reflective layer; 17-zener diode.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
In the description of the present application, it is to be understood that the terms "thickness," "top," "bottom," "inner," "outer," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular orientation, and thus should not be construed as limiting the present application.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
Reference throughout this specification to "one embodiment," "some embodiments," or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the present application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," or the like, in various places throughout this specification are not necessarily all referring to the same embodiment, but rather "one or more but not all embodiments" unless specifically stated otherwise. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
Referring to fig. 1, a deep ultraviolet LED package 100 provided herein will now be described. The deep ultraviolet LED package 100 includes a substrate 11, a dam 12, and an LED chip 13, where the LED chip 13 is mounted on the substrate 11, and the LED chip 13 is supported by the substrate 11. The box dam 12 is mounted on the base plate 11, and the box dam 12 is supported by the base plate 11; the LED chips 13 are arranged in the box dam 12, and light rays emitted by the LED chips 13 are reflected out through the box dam 12, so that the light emitting efficiency is improved. The box dam 12 has an inner surface 120 for reflecting the light emitted by the LED chip 13 into parallel light to be emitted, that is, when the light emitted by the LED chip 13 irradiates the inner surface 120 of the box dam 12, the inner surface 120 of the box dam 12 can adjust the light into parallel light by reflection, so as to emit more and better light out of the box dam 12, reduce the loss of the light inside the box dam 12, and improve the light emitting efficiency; in addition, the emitted parallel light can be effectively utilized more conveniently, thereby improving the light utilization rate and further improving the light extraction efficiency of the deep ultraviolet LED package 100.
According to the deep ultraviolet LED package 100 provided by the application, light emitted by the LED chip 13 is reflected and adjusted through the inner surface 120 of the box dam 12, so that the light emitted by the LED chip 13 forms parallel light to be emitted, the loss of the light in the box dam 12 is reduced, and the light emitting efficiency is improved; and the emitted parallel light can be used more conveniently and efficiently, so that the utilization rate of the light emitted by the deep ultraviolet LED package 100 is further improved, and the light extraction efficiency of the deep ultraviolet LED package 100 is improved.
In one embodiment, the inner surface 120 of the dam 12 has a parabolic cross-sectional shape 121 along the thickness of the substrate 11. That is, the inner surface 120 of the dam 12 is a curved line in the cross section along the thickness direction of the substrate 11, the curved line is a cross section line 121 of the inner surface 120 of the dam 12 along the thickness direction of the substrate 11, and the cross section line 121 is a parabolic line, so that the inner surface 120 of the dam 12 forms a paraboloid, so as to better reflect the light emitted by the LED chip 13 into parallel light to be emitted, and improve the light emitting efficiency.
In one embodiment, a cross-sectional line 121 of the inner surface 120 of the dam 12 in the thickness direction of the substrate 11 satisfies the following formula: y is ax2+ bx + c, where 0<a<2，-0.5<b<0.5,0 ≦ c ≦ 400, that is, the section line 121 is a parabola, and the section line 121 takes the center point of the area corresponding to the dam 12 on the substrate 11 as the origin O, that is, the section line 121 takes the center point of the mounting position of the LED chip 13 on the substrate 11 as the origin O, y is the distance from a point on the section line 121 to the substrate 11, x is the distance from a point on the section line 121 to the origin O in the direction parallel to the substrate 11, then the direction passing through the origin O and parallel to the substrate 11 is the x-axis, and the direction passing through the origin O and perpendicular to the substrate 11 is the y-axis, forming a parabola formula of the section line 121. The cross-sectional line 121 satisfying the formula corresponds to the inner surface 120 of the parabolic dam 12, and reflects more light emitted from the LED chip 13And light extraction efficiency is improved.
In one embodiment, the end of the inner surface 120 of the dam 12 away from the substrate 11 along the cross-sectional line 121 of the substrate 11 in the thickness direction is a top end 1211; then, in the direction from the top end 1211 to the substrate 11, the cross-sectional line 121 also satisfies the following condition:
the distance range from the top 1211 is 0-50 microns, a is more than or equal to 0.1 and less than or equal to 0.3, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 200 and less than or equal to 300;
the distance range from the top end 1211 is 50-100 microns, a is more than or equal to 0.3 and less than or equal to 0.7, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 100 and less than or equal to 200;
the distance range from the top 1211 is 100-200 microns, a is more than or equal to 0.7 and less than or equal to 1.1, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 50 and less than or equal to 100;
the distance range from the top 1211 is 200-400 microns, a is more than or equal to 1.1 and less than or equal to 1.5, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 20 and less than or equal to 50;
at the distance range of the top 1211 greater than 400 microns, a is greater than or equal to 1.5 and less than or equal to 2, b is greater than or equal to 0.5 and less than or equal to 0.5, and c is greater than or equal to 0 and less than or equal to 20.
The cross section line 121 of the inner surface 120 of the dam 12 along the thickness direction of the substrate 11 is designed to be a multiple parabolic combination, so that more light rays emitted by the LED chips 13 can be reflected to form parallel light, more light rays can be emitted, and the light emitting efficiency is improved.
In one embodiment, the distance from the top 1211 of the cross-sectional line 121 of the inner surface 120 of the dam 12 along the thickness direction of the substrate 11 to the substrate 11 is in the range of 400-600 microns. Since the height of the LED chip 13 is about 200 μm, if the distance from the top 1211 of the cross-sectional line 121 to the substrate 11 is too small, the LED chip 13 has poor light-emitting uniformity and poor parallelism of light-gathering. If the distance from the top 1211 of the cross-sectional line 121 to the substrate 11 is large, the LED chip 13 emits light which is reflected in the dam 12 a plurality of times, resulting in light loss. The distance between the top 1211 of the cross-sectional line 121 and the substrate 11 is 400-600 μm, so that more light can be emitted and the light-emitting efficiency can be improved.
In one embodiment, a cross-sectional line 121 of the inner surface 120 of the dam 12 along the thickness direction of the substrate 11 is in arc transition connection with the substrate 11 at an end close to the substrate 11, that is, the cross-sectional line 121 is in arc transition connection with the substrate 11 at an end close to the substrate 11, so that the inner surface 120 of the dam 12 is in arc surface filtering connection with the substrate 11 to better reflect light, and reflect more light emitted by the LED chip 13. The arc 122 of the cross-section 121 between the end of the base plate 11 and the base plate 11 is in the range of 10 degrees to 65 degrees to provide a better smooth transition between the inner surface 120 of the dam 12 and the base plate 11.
In one embodiment, the deep ultraviolet LED package 100 further includes a lens 14 covering the dam 12 to better protect the LED chips 13 in the dam 12. In some embodiments, the dam 12 may be filled with an encapsulation adhesive to protect the LED chip 13. In one embodiment, the lens 14 can also adjust the light emitted from the light-adjusting dam 12 to make the emitted light more focused and parallel.
In one embodiment, the lens 14 can be fixed on the dam 12 by bonding with the adhesive layer 141, and the installation and fixation are convenient. In some embodiments, the lens 14 may also be soldered to the dam 12. In some embodiments, the lens 14 may be fixed on the dam 12 by the packaging adhesive when the dam 12 is filled with the packaging adhesive.
In one embodiment, the lens 14 is bonded to the dam 12 by an intermetallic compound melt, thereby more stably securing the lens 14 to the dam 12.
In one embodiment, the wavelength range of the LED chip 13 is 250-285nm, so that the light emitted from the deep ultraviolet LED package 100 is deep ultraviolet light.
In one embodiment, the LED chip 13 may adopt a flip structure to improve light extraction efficiency. In still other embodiments, the LED chip 13 may also be mounted in a vertical configuration for ease of mounting.
In one embodiment, when the lens 14 is fixed to the dam 12 using an adhesive paste, an organic resin paste may be used as the adhesive paste layer 141. Of course, in other embodiments, other curing glues may be used for the lens 14.
In one embodiment, the substrate 11 is made of aluminum nitride plating alloy, and in other embodiments, the substrate 11 may be made of other materials, such as ceramic material.
In one embodiment, referring to fig. 2, a step groove 123 is formed at an end of the dam 12 away from the substrate 11, and the lens 14 is disposed in the step groove 123. The step groove 123 is provided to facilitate positioning of the lens 14, and thus, mounting and fixing of the lens 14.
In one embodiment, the depth of the stepped groove 123 ranges from 100 microns to 200 microns to stably mount the fixed lens 14.
In one embodiment, the inner surface 120 of the dam 12 is provided with a reflective coating 15 to improve the reflective efficiency, so as to reflect more light emitted from the LED chip 13 and improve the light extraction rate.
In one embodiment, the reflective coating 15 may be a highly reflective aluminum layer or a teflon coating to ensure high light reflectivity.
In one embodiment, the substrate 11 is provided with a reflective layer 16 in an area outside the LED chip 13 and corresponding to the area in the dam 12, so as to better reflect more light emitted from the LED chip 13 and improve the light extraction rate.
In one embodiment, the light-reflecting layer 16 is a teflon coating to enhance the light reflectivity of the substrate 11. In other embodiments, the light-reflecting layer 16 may be made of other highly light-reflecting materials.
In one embodiment, the deep ultraviolet LED package 100 further includes a zener diode 17 for stabilizing a voltage supplied to the LED chip 13, the zener diode 17 being mounted on the substrate 11. The voltage stabilizing diode 17 is arranged, so that stable work of the LED chip 13 can be better guaranteed, and the luminous efficiency and the service life of the LED chip 13 are guaranteed.
In one embodiment, the zener diode 17 is disposed in the dam 12, that is, during manufacturing, the zener diode 17 may be mounted on the substrate 11, and then the dam 12 is formed on the substrate 11, so that the dam 12 wraps the zener diode 17 to better protect the zener diode 17.
In one embodiment, the zener diode 17 may adopt a flip-chip structure to improve the light extraction efficiency. In still other embodiments, zener diode 17 may also use a vertical structure to facilitate mounting.
In one embodiment, referring to fig. 3, the zener diode 17 is disposed in the dam 12 to facilitate the installation of the zener diode 17, and also to facilitate the disposition of the dam 12 on the substrate 11.
In one embodiment, when the substrate 11 is provided with the light reflecting layer 16 in the area of the dam 12, the light reflecting layer 16 surrounds the zener diode 17 and the LED chip 13 to facilitate the mounting and fixing of the zener diode 17 and the LED chip 13.
In one embodiment, referring to fig. 4, a slot 111 may be formed on the back surface of the substrate 11 for mounting the zener diode 17, so as to protect the zener diode 17 and facilitate the mounting and fixing of the substrate 11. Of course, in some embodiments, the zener diode 17 may also be provided in an external circuit.
The embodiment of the present application further provides a lamp, which includes the deep ultraviolet LED package 100 according to any one of the above embodiments. The lamp uses the deep ultraviolet LED package 100 described in the above embodiments, and has higher light emitting efficiency, more available light rays and high light utilization rate.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (6)
1. Dark ultraviolet LED packaging structure, including the base plate, install in box dam on the base plate and install in LED chip on the base plate, LED chip locates in the box dam, will through the box dam the light that LED chip sent reflects its characterized in that: the dam is provided with an inner surface which reflects light rays emitted by the LED chips into parallel light rays and emits the parallel light rays, a section line of the inner surface along the thickness direction of the substrate is parabolic, one end, close to the substrate, of the section line is in arc transition connection with the substrate, and the radian range of a transition arc line between one end, close to the substrate, of the section line and the substrate is 10-65 degrees; the section line satisfies the following formula: y is ax2+ bx + c, where 0<a<2，-0.5<b<C is more than or equal to 0.5 and less than or equal to 0 and less than or equal to 400, and the cross section line of the LED chip on the substrateThe center point of the installation position is an original point, y is the distance from a certain point on the section line to the substrate, x is the distance from a certain point on the section line to the original point along the direction parallel to the substrate, one end of the section line far away from the substrate is a top end, and the section line also meets the following conditions from the top end to the substrate:
the distance range from the top end is 0-50 microns, a is more than or equal to 0.1 and less than or equal to 0.3, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 200 and less than or equal to 300;
at the distance range of 50-100 microns from the top end, a is more than or equal to 0.3 and less than or equal to 0.7, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 100 and less than or equal to 200;
the distance range from the top end is 100-200 microns, a is more than or equal to 0.7 and less than or equal to 1.1, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 50 and less than or equal to 100;
at the distance range of 200-400 microns from the top end, a is more than or equal to 1.1 and less than or equal to 1.5, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 20 and less than or equal to 50;
at the distance range from the top end to the top end of more than 400 microns, a is more than or equal to 1.5 and less than or equal to 2, b is more than or equal to 0.5 and less than or equal to 0.5, and c is more than or equal to 0 and less than or equal to 20.
2. The deep ultraviolet LED package structure of claim 1, wherein: the distance from the top end to the substrate ranges from 400 microns to 600 microns.
3. The deep ultraviolet LED package structure of claim 1 or 2, wherein: the inner surface is provided with a reflective coating.
4. The deep ultraviolet LED package structure of claim 1 or 2, wherein: the deep ultraviolet LED package further comprises a lens covering the dam.
5. The deep ultraviolet LED package structure of claim 1 or 2, wherein: the deep ultraviolet LED package further comprises a voltage stabilizing diode for stabilizing the voltage transmitted to the LED chip, and the voltage stabilizing diode is mounted on the substrate.
6. Lamps and lanterns, its characterized in that: comprising the deep ultraviolet LED package structure of any one of claims 1-5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010450976.4A CN111640846B (en) | 2020-05-25 | 2020-05-25 | Deep ultraviolet LED packaging and lamp |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010450976.4A CN111640846B (en) | 2020-05-25 | 2020-05-25 | Deep ultraviolet LED packaging and lamp |
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| CN111640846A CN111640846A (en) | 2020-09-08 |
| CN111640846B true CN111640846B (en) | 2021-05-14 |
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| CN113975646A (en) * | 2021-11-02 | 2022-01-28 | 中国人民解放军总医院第一医学中心 | LED uniform luminous component suitable for human body |
| CN114904022A (en) * | 2022-03-23 | 2022-08-16 | 厦门大学 | Large-area deep ultraviolet solid-state area light source and sterilization device |
| CN118099337A (en) * | 2024-04-23 | 2024-05-28 | 广州市鸿利秉一光电科技有限公司 | UV LED packaging structure and method |
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