CN109671830A - UV disinfection system - Google Patents
UV disinfection system Download PDFInfo
- Publication number
- CN109671830A CN109671830A CN201811202334.1A CN201811202334A CN109671830A CN 109671830 A CN109671830 A CN 109671830A CN 201811202334 A CN201811202334 A CN 201811202334A CN 109671830 A CN109671830 A CN 109671830A
- Authority
- CN
- China
- Prior art keywords
- structure according
- optical transmission
- side wall
- transmission lid
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004659 sterilization and disinfection Methods 0.000 title abstract description 19
- 230000005855 radiation Effects 0.000 claims abstract description 84
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 230000005540 biological transmission Effects 0.000 claims description 18
- 239000012530 fluid Substances 0.000 claims description 7
- 239000000499 gel Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 230000001154 acute effect Effects 0.000 claims description 2
- 208000029152 Small face Diseases 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 239000011343 solid material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910021654 trace metal Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 239000004812 Fluorinated ethylene propylene Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005202 decontamination Methods 0.000 description 2
- 230000003588 decontaminative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920009441 perflouroethylene propylene Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 241000894006 Bacteria Species 0.000 description 1
- 229920000965 Duroplast Polymers 0.000 description 1
- 235000003283 Pachira macrocarpa Nutrition 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 241001083492 Trapa Species 0.000 description 1
- 235000014364 Trapa natans Nutrition 0.000 description 1
- 241000700605 Viruses Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 238000012921 fluorescence analysis Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009165 saligot Nutrition 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L2/00—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
- A61L2/02—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor using physical phenomena
- A61L2/08—Radiation
- A61L2/10—Ultra-violet radiation
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L9/00—Disinfection, sterilisation or deodorisation of air
- A61L9/16—Disinfection, sterilisation or deodorisation of air using physical phenomena
- A61L9/18—Radiation
- A61L9/20—Ultra-violet radiation
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/30—Treatment of water, waste water, or sewage by irradiation
- C02F1/32—Treatment of water, waste water, or sewage by irradiation with ultraviolet light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2201/00—Apparatus for treatment of water, waste water or sewage
- C02F2201/32—Details relating to UV-irradiation devices
- C02F2201/322—Lamp arrangement
- C02F2201/3228—Units having reflectors, e.g. coatings, baffles, plates, mirrors
Abstract
Present application is related to a kind of UV disinfection system.The embodiment of the present invention includes a kind of UV UV source, and the source UV includes semiconductor device, and the semiconductor device includes the active layer being placed between n-type area and p-type area.The active layer transmitting has the radiation of the peak wavelength in UV range.Reflector cup is disposed around the source UV.Transparency cover is placed in above the reflector cup.
Description
The cross reference of related application
Present application is to file an application on April 8th, 2016 and entitled " UV disinfection system (Ultraviolet
Disinfection System) " the 15/094th, No. 873 U.S. patent application case continuation in part application case, the U.S.
Patent application case is on October 17th, 2017 as No. 9,789,295 United States Patent (USP) publication.No. 15/094,873 U.S. is special
Sharp application case is incorporated herein.
Technical field
Present application is related to a kind of UV disinfection system.
Background technique
The band gap of III-nitride material comprising (AlN, GaN, InN) and its alloy is from the very narrow gap of InN
(0.7eV) extends to the very wide gap (6.2eV) of AlN, so that III-nitride material be made to extend to depth from near-infrared
Ultraviolet wide spectral range inner height is suitable for optoelectronic applications, such as light emitting diode (LED), laser diode, optics tune
Device and detector processed.The InGaN in active layer can be used to obtain for visible LED and laser, and ultraviolet (UV) LED and laser
Need the larger band gap of AlGaN.
It is expected that there is the application of wide scope with the UV LED of the launch wavelength in the range of 230nm to 350nm,
In be mostly based on UV radiation biomaterial between interaction.Typical case includes surface disinfection, Water warfare, medical treatment
Device and biochemistry, the light source for ultra high density optical recording, white-light illuminating, fluorescence analysis, sensing and zero-emission vehicle.
UV, which radiates to have, makes bacterium, virus and the deactivated disinfection property of other microorganisms.Cooper-Hewitt lamp can produce
UV radiation in the range of 254nm.Since most of microbe is by the radiation effect of 260nm or so, UV radiation pair
At sterilizing activity in the proper range.
Summary of the invention
According to an aspect of the present invention, a kind of structure is provided, the structure includes: the ultraviolet source (UV) comprising is partly led
Body device, the semiconductor device include the active layer being placed between n-type area and p-type area, wherein active layer transmitting tool
There is the radiation of the peak wavelength in UV range；Reflector cup is disposed around the source UV；And optical transmission lid, peace
It is placed in above the reflector cup, the optical transmission lid includes angled side wall.
Detailed description of the invention
Fig. 1 illustrates the UV radiation source 50 comprising UV emitter (UVLED).
Fig. 2 is the plan view of multiple pixels in flip-chip UVLED.
Fig. 3 is the cross-sectional view of a pixel in the UVLED of Fig. 2.
Fig. 4 illustrates the UV radiation source 50 comprising UVLED and lens.
Fig. 5 illustrates the UV radiation source of Fig. 1 of the object disinfection for will be spaced apart with UV radiation source.
Fig. 6 is illustrated for by the UV radiation source of Fig. 1 of fluid disinfection.
Fig. 7 is the block diagram for controlling the circuit of UV decontamination system.
Fig. 8 illustrates the UV radiation source comprising the lid with angled side wall.
Specific embodiment
Although device described herein is group III-nitride device, by other materials (such as other iii-vs
Material, II-VI group material, Si) formed device in the scope of embodiments of the invention.Device described herein can be through
Configuration with emit UV A radiation (peak wavelength is between 340nm and 400nm), UV beta radiation (peak wavelength between 290nm with
Between 340nm) or UV C radiation (peak wavelength is between 210nm and 290nm).
In an embodiment of the present invention, one or more UVLED are in packaged type UV radiation source.Although in reality of the invention
Apply in example any suitable purposes of expected UV radiation source, but in some embodiments, UV radiation source can be used for being suitable for by object,
In fluid (such as water or air) or any other suitable material or the chlorination equipment of structure disinfection.
Fig. 1 illustrates packaged type UV radiation source 50.In the device of Fig. 1, one or more UVLED 1 are attached to mounting
70.For example, mounting 70 can be ceramic mounting, circuit board, metal-core printed circuit board, silicon mounting or any other suitable
Structure.Such as the circuit elements such as drive circuit for UVLED 1 or any other suitable circuit can be placed in mounting 70
It is upper or interior.Single UVLED can be used, multiple UVLED for being placed in single package can be used, or can be used respectively contain one or
Multiple encapsulation of multiple UVLED radiate in order to provide for the UV of given application abundance.
Reflector cup 32 is disposed around UVLED 1.Reflector cup 32 can be any suitable structure.In some embodiments
In, reflector cup 32 is the hollow structure for being attached (for example) and arriving mounting 70.The inner surface reflection UV radiation of reflector cup 32.
For example, reflector cup 32 can be any suitable by what is be machined and polished to reflecting surface by the inclusion of (for example)
Reflecting material (such as aluminium) production that the technology of conjunction is formed.Alternatively, reflector cup 32 can be by being coated with reflecting layer on inside
Non-reflective materials production.Suitable example includes to pass through (for example) molding, injection-molded, 3D printing or any other suitable
Technology formed plastics.The example of suitable reflectance coating include metal, silver, aluminium, teflon, polytetrafluoroethylene (PTFE) (PTFE),
Barium sulfate, oxide, silicon oxide (include SiO2), the oxide of yttrium, the oxide of hafnium, multiple-level stack, distributed Bradley
Lattice reflector and combinations thereof.Coating can be formed by the inclusion of any suitable technology of (for example) plating, vapor deposition or spraying.
The reflective inner surface of reflector cup 32 can have any suitable finish, include mirror finish, diffusing reflection or " orange peel " light
Cleanliness or facet finish (facet can have mirror finish or the cleanliness that diffuses).
In some embodiments, reflector cup 32 can be formed and in the case where not having reflector cup 32 by UVLED 1
The radiation pattern of transmitting compares the radiation pattern of collimation.In some embodiments, reflector cup 32 is shaped so that reflecting
The UV radiation emitted at the top of device cup 32 from device is substantially uniform.In some embodiments, reflector cup 32 can have
There is parabolic-like sidewall.In the plane of major surfaces for being parallel to UVLED 1, the cross section of reflector cup 32 can for it is round,
Square, rectangle, ellipse or any other suitable shape.In general, reflector cup 32 is defeated by directly reflection change radiation
Pattern out, but in some embodiments, total internal reflection can be used.
Lid 34 is placed in 32 top of reflector cup.The lid can be resistance by the radiation emitted of UVLED 1 and optical transmission
By any material of the radiation emitted of UVLED 1.In some embodiments, lid 34 is for the radiation emitted by UVLED 1
Bright.It is suitble to material including but not limited to quartz, fused silica, UV duroplasts film (such as fluorinated ethylene propylene (FEP)), silicon
Ketone, sapphire, UV transparent glass and with titleThe transparent cyclic olefine copolymer of the UV of sale (COC).In some implementations
In example, reflector guides the radiation emitted by UVLED 1, so that it is shone with the angle for being substantially perpendicular to the major surfaces of lid 34
It penetrates on lid 34 (for example) to minimize reflection.In some embodiments, the top side of lid 34 is (back to UVLED's 1
Side), the bottom side (side towards UVLED 1) of lid 34 or both roughened, textured or patterned (citing comes
Say) to serve as diffusing globe for the radiation for leaving lid 34.
In some embodiments, the region 36 sealed by UVLED 1, reflector cup 32 and lid 34 is filled with air or other
Ambient gas.Region 36 can be it is sealed, although wherein region 36 filled with ambient gas embodiment in and should not
Seek this condition.In some embodiments, region 36 can be filled with index-matching material, such as lens oil, silicone gel or solid
Body material, such as quartz or silicone.Index-matching material can be chosen to match (for example, the UVLED 1 of UVLED 1
Growth substrates are described below) refractive index, the refractive index of lid 34 or can be chosen as between the refractive index and lid of UVLED 1
Between 34 refractive index.
In some embodiments, such as the optical devices such as lens or any other suitable structure form or are placed in UVLED
1 top, as illustrated in fig. 4.Lens 38 are by the UV radiation transparent by the wavelength emitted of UVLED 1 and can be
The material that UV radiation is born in the case where not degrading is formed.For example, in some embodiments, lens 38 can be by transmiting at least
The material of the 85% UV radiation in 280nm is formed.The material be exposed in 280nm UV radiate 1000 hours it
After can degrade no more than 1%.In some embodiments, lens 38 by moldable material (such as, for example, glass, can be from five
The IHU UV transmissive glass and the silicone of resistance to UV that water chestnut Seiko glass company (Isuzu Glass, Inc.) obtains) it is formed.In some realities
It applies in example, lens 38 are formed by that can pass through (for example) grinding and polish the material (such as quartz or sapphire) of forming.It is logical
The lens of over-molded formation can be less expensive；Lens by grinding and polishing formation can have preferred optical quality.It is preforming
Lens 38 (such as quartz lens) could attach to UVLED 1 or be placed in 1 top UVLED and be attached to mounting 70.Lens 38 can
It is optically coupled to the only top surface of UVLED 1 or is optically coupled to top surface and the side surface of UVLED 1.Lens 38 can be
Any suitable shape.Although illustrating dome lens, other shapes (such as Fresnel (Fresnel) lens, hyperbolic are saturating
The lens of mirror, parabolic lenticules and the pedestal with square base or shape identical with UVLED 1 are (that is, the bottom of lens
The part that portion surface and/or lens are contacted with the top emissive surface of UVLED 1 is square or shape identical with UVLED 1
Shape)) it can be to be suitble to.When comprising lens 38, region 36 is normally filled with air or other gases, although in some embodiments
In, region 36 can be filled in liquid, gel or solid, as described above.
Commercially available UVA LED, UVB LED and UVC LED can be used in various embodiments.Fig. 2 and 3 is workable agency
The example of UVB LED and the UVC LED of people oneself.Fig. 2 is the top view of a part of the array of UVLED pixel 12, and Fig. 3 is
Single UVLED pixel 12 divides cross section equally.Any suitable UVLED can be used, and the embodiment of the present invention is not limited to Fig. 2 and 3
Device.
UVLED is usually group III-nitride, and often GaN, AlGaN and InGaN.The array shape of UV transmitting pixel 12
At on single substrate 14, such as transparent sapphire substrate.There may be other substrates.Although example shows that pixel 12 is round
, but it can have any shape, such as square.Light is escaped across transparent substrates, as shown in fig. 3.Pixel 12 can be each
It (is described below) from for flip-chip, Anodic and cathode electrode towards mounting.
All semiconductor layers are epitaxially grown in 14 top of substrate.Growing AIN or other suitable buffer layer (not shown), after
Continued access n-type area 16.N-type area 16 may include multiple layers of different constituents, concentration of dopant and thickness.N-type area 16 may include
At least one Al of N-shaped is doped to Si, Ge and/or other suitable n-type dopantsaGa1-aN film.N-type area 16 can have from about
It 100nm to about 10 microns of thickness and is directly grown on buffer layer.In n-type area 16 doped level of Si can between from 1 ×
1016cm-3To 1 × 1021cm-3In the range of.Depending on set launch wavelength, AlN molar fraction " a " can be from for hair in formula
Penetrate 360nm device be 0% change to for be designed to transmitting 200nm device be 100%.
Active region 18 is grown on 16 top of n-type area.Active region 18 may include single Quantum Well or be separated by barrier layer
Multiple Quantum Well (MQW).Quantum Well and barrier layer contain AlxGa1-xN/AlyGa1-yN, wherein 0 < x < y < 1, x indicate quantum well layer
AlN molar fraction, and y indicate barrier layer AlN molar fraction.It is generally depended on by the peak wavelength that UV LED emits
The relative amount of Al in AlGaN Quantum Well active layer.
P-type area 22 is grown on 18 top of active region.Such as n-type area 16, p-type area 22 may include different constituents, dopant
Multiple layers of concentration and thickness.P-type area 22 includes one or more p-type doping (for example, Mg is adulterated) AlGaN layers.AlN molar fraction
Can in the range of from 0 to 100%, and this layer or the thickness of multilayer can between from about 2nm to about 100nm (single layer) or to
In the range of about 500nm (multilayer).Multilayer used in this area can improve transverse conductivity.Mg doped level can from 1 ×
1016cm-3Change to 1 × 1021cm-3.Mg doping GaN contact layer can be finally grown in p-type area 22.
All or some in semiconductor layer as described above can grow under the conditions of excessive Ga, such as by reference simultaneously
Enter and is more fully described in US 2014/0103289 herein.
The etched groove to form the surface in exposing n-type area 16 between pixel 12 of semiconductor structure 15.Pixel 12
Side wall 12a can be the normal of major surfaces vertical or relative to growth substrates with acute angle 12b inclination.Each pixel 12
Highly 138 can be between 0.1 micron to 5 microns.The bottom of each pixel 12 and the width 131 and 139 at top can be extremely
It is 5 microns few.Other sizes can also be used.
Before or after etching semiconductor structure 15 to form groove, the contact metal p 24 is deposited on each pixel 12
It is on top and patterned.The contact p 24 may include to be formed ohm contact one or more metal layers and formed reflector one or
Multiple metal layers.One example of the suitable contact p 24 includes Ni/Ag/Ti laminated contact.
The contact n 28 is deposited and the patterned n-type area 16 that the contact n 28 is placed between pixel 12 it is substantially flat
On smooth surface.The contact n 28 may include single or multiple metal layers.For example, the contact n 28 may include directly connecing with n-type area 16
The contact ohm n 130 of touching and the n trace metal layer 132 for being formed in 130 top of ohm contact n.For example, the contact ohm n
130 can be V/Al/Ti laminated contact.For example, n trace metal 132 can be Ti/Au/Ti laminated contact.
The contact the contact n 28 and p 24 is electrically isolated by dielectric layer 134.Dielectric layer 134 can be to pass through any appropriate methodology
Any suitable material formed, such as, for example, one or more oxides of silicon and/or one or more nitride of silicon.Electricity
Dielectric layer 134 covers the contact n 28.It is formed in the opening exposure contact p 24 in dielectric layer 134.
P trace metal 136 is formed in above the top surface of device, and substantially conformally covers entire top surface.p
Trace metal 136 is electrically connected to the contact p 24 in the opening being formed in dielectric layer 134.P trace metal 136 is situated between by electricity
Matter layer 134 and the contact n 28 are electrically isolated.
The steady metal gasket for being electrically connected to p trace metal 136 and the contact n 28 is set to except schema to be connected to electric power confession
Answer terminal.Multiple pixels 12 are contained in single UVLED.Pixel passes through large area p trace metal 136 and large area n Determination of trace gold
Belong to 132 electrical connections.The number of pixel can be selected based on application and/or wanted radiant output.It will include multiple pixels in the following figure
Single UVLED be illustrated as UVLED 1.
In some embodiments, substrate 14 is sapphire.For example, substrate 14 may be about hundreds of microns thickness.Having
Have in the 1mm square UVLED 1 of 200 μ m-thick Sapphire Substrates, it is assumed that extract radiation, top table from the top of substrate and side
Face occupies about 55% extraction surface, and side occupies about 45% extraction surface of substrate.In some embodiments, substrate 14
A part of device can be remained, and in some embodiments, the substrate can be removed from semiconductor structure.
In some embodiments, the top emissive surface of substrate 14 is roughened, patterned or textured (citing comes
Say) to improve the extraction of radiation, or the extraction of the radiation from device shaped.For example, microlens array, one or more
Fresnel lens or photonic crystal can be formed in Sapphire Substrate.In some embodiments, the relative growth surface of substrate can
Roughened, patterned or textured (for example) is to promote growth and/or improve 14 from semiconductor material to substrate
In radiation extraction.
When from the top surface of substrate 14 (when device is overturn relative to orientation illustrated in Fig. 3) viewing,
UVLED can be square, rectangle or any other suitable shape.
Illustrated UV radiation source 50 can be particularly suitable for some disinfection applications in Fig. 1 and 4.In some embodiments
In, simply object to be sterilized is placed on lid 34.Fig. 5 and 6 is illustrated using UV illustrated in Fig. 1 and 4
Two disinfections of radiation source are applied.
In the device of Fig. 5, UV radiation source 50 is spaced apart with object 64 to be sterilized.Object 64 can be placed in microscope carrier 60
On.Microscope carrier 60 can be positioned so that object 64 be spaced apart with the output area (that is, surface of lid 34) of UV radiation source 50 it is optimal away from
From 62.Distance 62 can be for one or more specific features (such as uniformity and/or the radiation function of the output UV radiation at the point
Rate) it selects.
In some embodiments, for adjust UV radiation source 50 output area and the object 64 being placed on microscope carrier 60 it
Between distance device 66 be coupled to UV radiation source 50, microscope carrier 60 or both.For example, device 66 may include for determining
The sensor and motor of the distance between object and UV radiation source, the motor are used to making one in UV radiation source 50 and microscope carrier 60
Person moves up or down, so that the distance between object and UV radiation source are the optimal distance 62 for disinfection.
In some embodiments, microscope carrier 60 can be configured so that object 64 moves through the output area of UV radiation source 50.
For example, microscope carrier 60 can be conveyer belt.An application of illustrated system is conveyer belt in Fig. 5, and user will move
Phone, laptop computer or other objects are placed on conveyer belt, so that object is sent out from the output surface of UV radiation source 50
Pass through and sterilized below the UV power penetrated.
In the device of Fig. 6, UV radiation source couples to the room for accommodating liquid or gas to be sterilized.Lid 34 can form described
The wall of room, as illustrated or the lid can be optically coupled to the independent wall of the room.
Fig. 7 be can any suitable application (such as, for example, disinfection as described above application) in control UV radiate
The block diagram of the circuit in source.As in prior art it is known that can readily calculate UV radiation source 50 number and disinfection needed for
Time.Any suitable circuit can be used.Not all components illustrated in Fig. 7 are necessary in all embodiments
's.The component can be placed on mounting as described above or in, and via mounting, circuit board or any other suitable structure
It is electrically connected to each other, as illustrated.UV radiation source 50 may be connected to microprocessor 90, and the microprocessor can be connected and be closed again
Disconnected UV radiation source 50 and the electric power for being adjustable to UV radiation source 50.It can be user's activation type or self-action and can be any be suitble to out
The switch 91 of pass can directly activate UV radiation source (not shown in Fig. 7) or can activation of microprocessor, the microprocessor connects UV
Radiation source.
The time quantum that fluid or object are exposed to the radiation from UV radiation source can provide by timer 94, the timer
Countable predetermined time amount, hereafter microprocessor 90 can turn off UV radiation source 50.Such as lamp or any other suitable indicator etc.
Whether just indicator 92 can indicate the transmitting UV radiation of UV radiation source 50.
Detector 96 can detect the UV amount of radiation of the set point in decontamination system.The UV amount of radiation emitted by source 50 can be by
Microprocessor 90 correspondingly adjusts.Second detector 98 can be used for detecting whether UV radiation source 50 properly works.Citing comes
It says, the first detector 96 can be positioned near UV radiation source 50, and the second detector 98 can be located remotely from UV radiation source 50.
When UV radiation source 50 is connected, the UV amount of radiation detected by each of detector 96 and 98 can be compared.If inspection
It surveys device 96 and indicates that UV amount of radiation is higher and detector 98 indicates that UV amount of radiation is lower, then fluid may be polluted by particle matter.
If detector 96 and 98 both indicates that UV amount of radiation is low, UV radiation source 50 may be properly acted.Indicator
92 can be used for indicating to the user that UV radiation source 50 is not properly acted.
In one operation, user activates switch 91.In response, microprocessor 90 connects UV radiation source 50.Micro process
Indicator 92 can be also switched to the state that instruction UV radiation source is just carrying out disinfection by device 90.UV amount of radiation is measured by detector 96.
In response, microprocessor 90 can adjust the time quantum that UV radiation source 50 remains up and/or the electric power to UV radiation source 50, with
Just the UV for delivering enough dose is radiated fluid disinfection.Once reaching dosage, microprocessor 92 can cut off UV radiation source 50
And it cuts off indicator 92 or indicator 92 is changed to indicate that UV radiation source completes the state of disinfection.
According to Snell's law (Snells ' s law), into lid 34 some radiation can in lid 34 by waveguide so that
It advances through waveguide antenna along the direction for the major surfaces for being roughly parallel to lid 34, the side wall across lid 34 leaves.This radiation is usual
It is not useable for sterilizing, and is therefore actually dropped.In some embodiments, by the side wall of lid 34 be made reduction across side wall from
The radiation that the amount of radiation or elimination opened are left across side wall.
In some embodiments, as illustrated in fig. 8, one or more side walls 100 of lid 34 are non-perpendicular, angulations
It is degree or shaped.As illustrated, side wall is shaped so that substitution vertical sidewall, side wall are inwardly at an angle of, so that lid
34 wide at bottom surface (bottom surface contact reflector cup 32 is positioned proximate to ratio in other ways at top surface
At UVLED 1).Although being illustrated as inside angle, side wall can be also at an angle of outward from the top to the bottom, so that covering
It is wider at bottom surface.As illustrated, side wall is angled so that the top surface of lid 34 formed with side wall 100 it is sharp
Angle.For example, in some embodiments, the angle can be at least 30 °, be at least 45 °, one in some embodiments
In a little embodiments, it is no more than 60 °, and in some embodiments, less than 90 °.As illustrated, angled side wall is flat
's.In some embodiments, side wall can be curved (convex or spill), or may include bending part and flat.?
In some embodiments, side wall has more than one profile.For example, the top section of side wall can be angled, and side
The bottom section of wall can be vertical；The top section of side wall can be vertical, and the bottom section of side wall can be into
Angle；The top section of side wall can be it is curved, and the bottom section of side wall can be it is vertical；The top section of side wall
Can be it is vertical, and the bottom section of side wall can be it is curved；The top section of side wall can be angled, and side wall
Bottom section can be it is curved；Or the top section of side wall can be curved, and the bottom section of side wall can be into
Angle.Any other suitable non-vertical sidewalls can be used.
In some embodiments, in single device, only one or less than all side walls are shaped.Described device can also wrap
Containing some vertical sidewalls.
In some embodiments, non-perpendicular or vertical sidewall patterned or roughened (for example) is to scatter off
The light of lid 34.In some embodiments, UV reflectance coating can be formed on all or part of of non-vertical sidewalls.UV reflection applies
Layer can be any one of UV reflecting material described herein.All side walls of lid 34, only vertical sidewall, only non-perpendicular side
Wall vertically can be covered with UV reflectance coating with the combination of non-vertical sidewalls.In some embodiments, some side walls can for not by
Covering.
The present invention has already been described in detail, those skilled in the art will understand that, in the case where providing this disclosure,
Modification can be made to the present invention without departing substantially from the spirit of concept of the present invention described herein.In particular, originally
The different characteristic and component of different device described in text can be used in any one of other devices, or can appointing from device
One omits feature and component.(for example) characteristic of optical device is applicable described in the context of one embodiment
In any embodiment.In a particular embodiment for be suitble to described in specific components material can be used for other components and/or its
In its embodiment.Therefore, it is not intended to limit the scope of the invention to illustrated and description specific embodiment.
Claims (18)
1. a kind of structure comprising:
UV UV source comprising semiconductor device, the semiconductor device include the effect being placed between n-type area and p-type area
Layer, wherein active layer transmitting has the radiation of the peak wavelength in UV range；
Reflector cup is disposed around the source UV；And
Optical transmission lid is placed in above the reflector cup, and the optical transmission lid includes angled side wall.
2. structure according to claim 1, wherein the angled side wall is the first side wall, the optical transmission Gai Jinyi
Step includes vertical second sidewall.
3. structure according to claim 1 further comprises being placed between the source UV and the optical transmission lid
Liquid, gel or solid material.
4. structure according to claim 3, wherein the source UV includes growth substrates, and the refractive index of the material between
Between the refractive index of the optical transmission lid and the refractive index of the growth substrates.
5. structure according to claim 1 further comprises the optical device being placed in above the source UV.
6. structure according to claim 1, wherein the major surfaces of the optical transmission lid are roughened.
7. structure according to claim 1, wherein the angled side wall is roughened.
8. structure according to claim 1, wherein the surface towards the source UV of the reflector cup includes directly unrestrained
Reflector.
9. structure according to claim 1, wherein the surface towards the source UV of the reflector cup includes several small
Face.
10. structure according to claim 1 further comprises for adjusting the optical transmission lid and being placed in described
The device of the distance between microscope carrier below optical transmission lid.
11. structure according to claim 10, wherein the microscope carrier is conveyer belt.
12. structure according to claim 10, wherein the device for adjusting distance includes:
Sensor, the distance between object and the optical transmission lid for being used to detect on the microscope carrier；And
Motor is used to that one of the optical transmission lid and described microscope carrier to be made to move up or down.
13. structure according to claim 1, wherein the optical transmission lid it is oriented with formed be placed above it is to be sterilized
The microscope carrier of object.
14. structure according to claim 1, wherein the optical transmission lid is optically coupled to fluid.
15. structure according to claim 14, wherein the optical transmission lid forms the device for being adapted to accommodate the fluid
The side wall of ware.
16. structure according to claim 14, wherein the optical transmission lid is optically coupled to and is adapted to accommodate the stream
The side wall of the vessel of body.
17. structure according to claim 1, wherein the top surface of the optical transmission lid and the angled side wall shape
It is at an acute angle.
18. structure according to claim 1, wherein the angled side wall is curved.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/785,177 US10105460B1 (en) | 2016-04-08 | 2017-10-16 | Ultraviolet disinfection system |
| US15/785,177 | 2017-10-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109671830A true CN109671830A (en) | 2019-04-23 |
Family
ID=66141693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811202334.1A Pending CN109671830A (en) | 2017-10-16 | 2018-10-16 | UV disinfection system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109671830A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111529727A (en) * | 2020-05-06 | 2020-08-14 | 上海光之盾科技有限公司 | Deep ultraviolet LED disinfection lamp for kitchen and bathroom |
| CN111640846A (en) * | 2020-05-25 | 2020-09-08 | 旭宇光电（深圳）股份有限公司 | Deep ultraviolet LED packaging and lamp |
| CN114929291A (en) * | 2019-11-06 | 2022-08-19 | 清洁光线实验室有限责任公司 | Disinfection device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080068821A1 (en) * | 2006-09-14 | 2008-03-20 | Industrial Technology Research Institute | Light emitting apparatus and image monitor |
| CN101852337A (en) * | 2004-05-05 | 2010-10-06 | 伦斯勒工业学院 | Light emitting apparatus |
| CN102956803A (en) * | 2011-08-19 | 2013-03-06 | 夏普株式会社 | Semiconductor light-emitting device |
| CN203131720U (en) * | 2013-01-31 | 2013-08-14 | 叶相章 | High-power ultraviolet light-emitting diode (LED) lamp packaging structure |
| CN204834682U (en) * | 2015-08-14 | 2015-12-02 | 广州市鸿利光电股份有限公司 | Glass apron and LED packaging structure |
| CN205248307U (en) * | 2015-11-13 | 2016-05-18 | 广州市鸿利光电股份有限公司 | Dark purple outer LED packaging structure |
-
2018
- 2018-10-16 CN CN201811202334.1A patent/CN109671830A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101852337A (en) * | 2004-05-05 | 2010-10-06 | 伦斯勒工业学院 | Light emitting apparatus |
| US20080068821A1 (en) * | 2006-09-14 | 2008-03-20 | Industrial Technology Research Institute | Light emitting apparatus and image monitor |
| CN102956803A (en) * | 2011-08-19 | 2013-03-06 | 夏普株式会社 | Semiconductor light-emitting device |
| CN203131720U (en) * | 2013-01-31 | 2013-08-14 | 叶相章 | High-power ultraviolet light-emitting diode (LED) lamp packaging structure |
| CN204834682U (en) * | 2015-08-14 | 2015-12-02 | 广州市鸿利光电股份有限公司 | Glass apron and LED packaging structure |
| CN205248307U (en) * | 2015-11-13 | 2016-05-18 | 广州市鸿利光电股份有限公司 | Dark purple outer LED packaging structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114929291A (en) * | 2019-11-06 | 2022-08-19 | 清洁光线实验室有限责任公司 | Disinfection device |
| CN111529727A (en) * | 2020-05-06 | 2020-08-14 | 上海光之盾科技有限公司 | Deep ultraviolet LED disinfection lamp for kitchen and bathroom |
| CN111640846A (en) * | 2020-05-25 | 2020-09-08 | 旭宇光电（深圳）股份有限公司 | Deep ultraviolet LED packaging and lamp |
| CN111640846B (en) * | 2020-05-25 | 2021-05-14 | 旭宇光电（深圳）股份有限公司 | Deep ultraviolet LED packaging and lamp |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9789215B1 (en) | Ultraviolet disinfection system | |
| US9893253B2 (en) | LED with scattering features in substrate | |
| US10105460B1 (en) | Ultraviolet disinfection system | |
| KR102237398B1 (en) | Method for producing optoelectronic devices comprising light-emitting diodes | |
| CN109671830A (en) | UV disinfection system | |
| US7293908B2 (en) | Side emitting illumination systems incorporating light emitting diodes | |
| TWI437735B (en) | Light emitting device and light emitting device package | |
| US7378686B2 (en) | Light emitting diode and side emitting lens | |
| CN108969789A (en) | Ultraviolet ray disinfecting system | |
| JP6360173B2 (en) | Flip chip side-emitting LED | |
| US10734554B2 (en) | Light emitting diode having distributed Bragg reflector | |
| EP3435427A1 (en) | Light emitting devices with compact active regions | |
| KR20130053630A (en) | Light emitting device package | |
| US20180166854A1 (en) | Light-emitting semiconductor device, light-emitting semiconductor component and method for producing a light-emitting semiconductor device | |
| US20170222075A1 (en) | Semiconductor device and a method of making a semiconductor device | |
| US20120049230A1 (en) | Light emitting device | |
| CN107619086A (en) | UV disinfection system | |
| US20140367637A1 (en) | Light emitting device and lighting system | |
| KR20130027903A (en) | Light emitting device | |
| JP2004095941A (en) | Light emitting device | |
| KR101790047B1 (en) | Light Emitting device | |
| US10847678B2 (en) | Light emitting device that includes a light-transmissive conductive layer | |
| US10026881B2 (en) | Light emitting device with reflector and a top contact | |
| US10461229B1 (en) | Package for ultraviolet emitting devices | |
| KR20110025503A (en) | A light emitting diode with hign brightness and manufacturing mehtods |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190423 |
|
| WD01 | Invention patent application deemed withdrawn after publication |