CN203131720U - High-power ultraviolet light-emitting diode (LED) lamp packaging structure - Google Patents
High-power ultraviolet light-emitting diode (LED) lamp packaging structure Download PDFInfo
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- CN203131720U CN203131720U CN2013200622509U CN201320062250U CN203131720U CN 203131720 U CN203131720 U CN 203131720U CN 2013200622509 U CN2013200622509 U CN 2013200622509U CN 201320062250 U CN201320062250 U CN 201320062250U CN 203131720 U CN203131720 U CN 203131720U
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- ultraviolet led
- led chip
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- power
- quartz glass
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Abstract
The utility model relates to a light-emitting diode (LED) packaging technology, in particular to a high-power ultraviolet LED lamp packaging structure. The high-power ultraviolet LED lamp packaging structure comprises a substrate and a plurality of ultraviolet LED chips, and is characterized in that the ultraviolet LED chips are evenly fixed on the substrate and sealed by silica glass, a space is formed between the ultraviolet LED chips and the silica glass, and the space is vacuum or filled with inert gases. Due to the fact that silica gel and resin are not used for sealing, the aging problem can not happen. Meanwhile, the substrate can be made of metal materials, heat dissipation is benefited, and the high-power ultraviolet LED lamp packaging structure is suitable for packaging high-power ultraviolet LED lamps.
Description
Technical field
The utility model relates to a kind of LED lamp encapsulation technology, particularly high-power ultraviolet LED lamp encapsulation structure.
Background technology
Ultraviolet ray is that wavelength is mainly in the 200-400nm(nanometer) light, this light people generally can't see.Ultraviolet ray is divided into three kinds of different zones: long wave 320-400 nm, medium wave 280-320nm, shortwave 200-280nm.Difference according to wavelength, ultraviolet ray has different applications: as fluorescent material detection, biopolymerization, surface modification treatment, treatment skin disease, sterilizing and paint solidification, pigment curing etc., application is very extensive, and bigger application is arranged aspect paint solidification especially.Traditional high-power ultraviolet light source all is to adopt quartz burner, and the ultraviolet curing light source mainly comprises types such as mercury vapor lamp, metal halide lamp, electrodeless lamp and xenon lamp at present, but these a few class lamps have deficiencies such as price is higher, not enough environmental protection.Along with the development of LED technology, because the LED light fixture has characteristics such as energy-conserving and environment-protective, long service life, the ultraviolet LED lamp also progresses into the UV application field.The structure of LED lamp normally is fixed on led chip on pedestal or the substrate back with silica gel or resin encapsulation at present.Because silica gel and resin be the meeting accelerated ageing under ultraviolet long-time irradiation, causes ultraviolet ray to weaken, and be more obvious in high-power ultraviolet LED lamp especially, restricted the range of application of ultraviolet LED lamp.
The utility model content
The purpose of this utility model is to provide a kind of safe and reliable high-power ultraviolet LED lamp encapsulation structure for overcoming the deficiencies in the prior art.
For achieving the above object, the technical solution that the utility model is taked is: a kind of high-power ultraviolet LED lamp encapsulation structure, comprise substrate, a plurality of ultraviolet LED chip, it is characterized in that: described a plurality of ultraviolet LED chips evenly are fixed on the substrate, and sealed by quartz glass, leave the space between described ultraviolet LED chip and the quartz glass, be vacuum or be filled with inert gas in the described space.
Beneficial effect compared with prior art is: the utility model is not owing to use silica gel and resin to carry out sealing, therefore can not exist because the aging problem that causes the depletion of UV light luminous intensity of silica gel and resin, substrate can adopt metal material to make simultaneously, be conducive to heat radiation, be suitable for high-power ultraviolet LED lamp encapsulation.
The utility model is described in further detail below in conjunction with the accompanying drawings and the specific embodiments.
Description of drawings
Accompanying drawing 2 is the utility model specific embodiment 1 decomposition texture schematic diagram;
Accompanying drawing 3 is the utility model specific embodiment 1 structure cutaway view;
Accompanying drawing 4 is the utility model specific embodiment 2 contour structures schematic diagrames;
Accompanying drawing 5 is the utility model specific embodiment 2 decomposition texture schematic diagrames;
Accompanying drawing 6 is the utility model specific embodiment 2 structure cutaway views.
The specific embodiment
As Figure 1-3, high-power ultraviolet LED comprises substrate 1, a plurality of ultraviolet LED chip 2, described a plurality of ultraviolet LED chip 2 evenly is fixed on the substrate 1, and by quartz glass such as quartz glass 3 sealings, leave the space between described ultraviolet LED chip 2 and the quartz glass 3, be vacuum or be filled with inert gas in the described space.Substrate 1 is made with good thermal conductor metal material such as copper material such as red copper, and shape can determine as required that described space can be to be made of the cavity that is arranged on the quartz glass 3.Substrate 1 is rectangle in this specific embodiment, encapsulation for convenience, be provided with cavity at described substrate 1 and form ultraviolet LED chip 2 cavity volumes, ultraviolet LED chip 2 cavity volumes can drawing on substrate 1, the sidewall of ultraviolet LED chip 2 cavity volumes can be to be obliquely installed, and be coated with reflector layer, be conducive to the light of side is reflected away, described ultraviolet LED chip 2 is fixed on ultraviolet LED chip 2 cavity volumes bottom, ultraviolet LED chip 2 evenly distributes, quartz glass 3 is sticked on the ultraviolet LED chip cavity volume mouth of substrate 1 sealing of ultraviolet LED chip 2 cavity volumes, leaves the space between described ultraviolet LED chip 2 and the quartz glass 3, is vacuum in the described space or is filled with inert gas.
In addition, shown in Fig. 4-6, also can be provided with shoulder rank 101 at described ultraviolet LED chip 2 cavity volume sidewalls, shoulder rank 101 to the distance of substrate 1 upper surface preferably with quartz glass 3 consistency of thickness, described quartz glass 3 is arranged on the ultraviolet LED chip 2 cavity volume mouths shoulder rank 101, and with the fixing sealing of binding agent, leave the space between described ultraviolet LED chip 2 and the quartz glass 3, be vacuum in the described space or be filled with inert gas.Described inert gas can be argon gas or nitrogen.
Claims (3)
1. high-power ultraviolet LED lamp encapsulation structure, comprise substrate, a plurality of ultraviolet LED chip, it is characterized in that: described a plurality of ultraviolet LED chips evenly are fixed on the substrate, and sealed by quartz glass, leave the space between described ultraviolet LED chip and the quartz glass, be vacuum or be filled with inert gas in the described space.
2. high-power ultraviolet LED lamp encapsulation structure according to claim 1, it is characterized in that: described substrate is provided with cavity and forms ultraviolet LED chip cavity volume, described ultraviolet LED chip is fixed on ultraviolet LED chip cavity volume bottom, described quartz glass is arranged on the ultraviolet LED chip cavity volume mouth ultraviolet LED chip cavity volume is sealed, the described space of inner formation.
3. high-power ultraviolet LED lamp encapsulation structure according to claim 2 is characterized in that: described ultraviolet LED chip cavity volume sidewall is provided with the shoulder rank, and described quartz glass is arranged on the described shoulder rank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013200622509U CN203131720U (en) | 2013-01-31 | 2013-01-31 | High-power ultraviolet light-emitting diode (LED) lamp packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013200622509U CN203131720U (en) | 2013-01-31 | 2013-01-31 | High-power ultraviolet light-emitting diode (LED) lamp packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203131720U true CN203131720U (en) | 2013-08-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013200622509U Expired - Fee Related CN203131720U (en) | 2013-01-31 | 2013-01-31 | High-power ultraviolet light-emitting diode (LED) lamp packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203131720U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106987145A (en) * | 2017-03-01 | 2017-07-28 | 盐城东紫光电科技有限公司 | A kind of encapsulating structure of UV LED chip |
| CN109671830A (en) * | 2017-10-16 | 2019-04-23 | 紫岳科技有限公司 | UV disinfection system |
-
2013
- 2013-01-31 CN CN2013200622509U patent/CN203131720U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106987145A (en) * | 2017-03-01 | 2017-07-28 | 盐城东紫光电科技有限公司 | A kind of encapsulating structure of UV LED chip |
| CN109671830A (en) * | 2017-10-16 | 2019-04-23 | 紫岳科技有限公司 | UV disinfection system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130814 Termination date: 20140131 |