KR102432220B1 - Semiconductor device and semiconductor module - Google Patents

Abstract

The semiconductor module disclosed in the embodiment includes a first reflective structure and a second reflective structure disposed on opposite sides of each other; a light emitting structure disposed between the first reflective structure and the second reflective structure; and at least one pad disposed outside at least one of the first reflective structure and the second reflective structure; and a circuit board on which a bottom surface of the semiconductor device is disposed, wherein the pad is disposed on a side surface adjacent to the bottom surface of the semiconductor device outside at least one of the first and second reflective structures, and is electrically connected to the light emitting structure and an outer side of the light emitting structure may be opened from the first and second reflecting structures to the outside between the first and second reflecting structures.

Description

Semiconductor device and semiconductor module

The embodiment relates to a semiconductor device.

The embodiment relates to a light emitting device.

The embodiment relates to a semiconductor device or a semiconductor module having a light emitting device.

A semiconductor device including a compound such as GaN or AlGaN has many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials have developed red, green, and It has the advantage of being able to implement light of various wavelength bands, such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a Group III-5 or Group II-6 compound semiconductor material may be implemented as a white light source with good efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light receiving device such as a photodetector or a solar cell is manufactured using a group 3-5 or group 2-6 compound semiconductor material, a photocurrent is generated by absorbing light in various wavelength ranges through the development of the device material. By doing so, light of various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, such a light receiving element has advantages of fast response speed, safety, environmental friendliness, and easy adjustment of element materials, and thus can be easily used in power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace a light emitting diode backlight, a fluorescent lamp or an incandescent light bulb that replaces a cold cathode fluorescence lamp (CCFL) constituting a transmission module of an optical communication means and a backlight of a liquid crystal display (LCD) display device. The application is expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device may be extended to high-frequency application circuits, other power control devices, and communication modules.

A light emitting device (Light Emitting Device) may be provided as a p-n junction diode having a property of converting electrical energy into light energy by using, for example, a group 3-5 element or a group 2-6 element on the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors are receiving great attention in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet (UV) light emitting device, and a red light emitting device using a nitride semiconductor have been commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that emits light distributed in a wavelength range of 200 nm - 400 nm, and is used for sterilization and purification in the case of a short wavelength in the wavelength band, and in the case of a long wavelength, an exposure machine or a curing machine, etc. can be used

Ultraviolet rays can be divided into UV-A (315nm-400nm), UV-B (280nm-315nm), and UV-C (200nm-280nm) in the order of the longest wavelength. UV-A (315nm-400nm) area is applied in various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit detection, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm-315nm) ) area is used for medical purposes, and the UV-C (200nm-280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as a semiconductor device capable of providing a high output is requested, research on a semiconductor device capable of increasing the output by applying a high power is being conducted.

In addition, in a semiconductor device package, research on a method for improving the light extraction efficiency of the semiconductor device and improving the luminous intensity at the package stage is being conducted. In addition, in a semiconductor device package, research is being conducted on a method for improving the bonding force between the frame of the package and the semiconductor device.

In addition, in the semiconductor device package, research is being conducted on a method for reducing manufacturing cost and improving manufacturing yield by improving process efficiency and changing the structure.

An embodiment provides a semiconductor device that emits light in at least three sides.

The embodiment may provide a semiconductor device that emits light in a lateral direction by reflective structures opposite to each other.

The embodiment may provide a semiconductor device package having a reflective structure opposite to each other and a phosphor layer covering the light emitting structure.

An embodiment may provide a semiconductor module having one or a plurality of semiconductor device packages.

A semiconductor module according to an embodiment may include a first reflective structure and a second reflective structure disposed on opposite sides of each other; a light emitting structure disposed between the first reflective structure and the second reflective structure; and at least one pad disposed outside at least one of the first reflective structure and the second reflective structure; and a circuit board on which a bottom surface of the semiconductor device is disposed, wherein the pad is disposed on a side surface adjacent to the bottom surface of the semiconductor device outside at least one of the first and second reflective structures, and is electrically connected to the light emitting structure and an outer side surface of the light emitting structure may be opened from the first and second reflecting structures to the outside between the first and second reflecting structures.

According to an embodiment, it includes a substrate disposed between the first reflective structure and the light emitting structure, wherein the light emitting structure is disposed between the substrate and the second reflective structure, and the light emitting structure includes the substrate and the second light emitting structure. A first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are disposed between the reflective structure, wherein the pad is connected to the first pad and the second conductivity type semiconductor layer connected to the first conductivity type semiconductor layer A second pad may be included.

In example embodiments, the first pad may be disposed outside the first reflective structure, and the second pad may be disposed outside the second reflective structure.

In example embodiments, the first pad and the second pad may be disposed outside the first reflective structure or the second reflective structure.

In an embodiment, a phosphor layer may be included on a surface of the semiconductor device, and the phosphor layer may be disposed on a side surface of the light emitting structure and surfaces of the first and second reflective structures.

According to an embodiment, the first and second reflective structures may include a DBR structure.

According to an embodiment, the light emitting structure may emit light through three side surfaces.

In an embodiment, at least three side surfaces of the semiconductor device may be opened, and the semiconductor device may include a plurality of semiconductor devices emitting light with the same or different peak wavelengths.

The embodiment may provide a semiconductor package having a thin thickness.

The embodiment has an effect of emitting light in a lateral direction by disposing a reflective structure on opposite sides of the light emitting structure.

In the embodiment, a phosphor layer is disposed on the surfaces of the light emitting structure and the reflective structure, thereby emitting the wavelength-converted light in the lateral direction.

The embodiment may reduce the size of a semiconductor module in which a plurality of semiconductor device packages are arranged.

The embodiment may improve the reliability of a light emitting device including a semiconductor module, a display device, and a lighting device.

1 is a perspective view of a semiconductor device according to an embodiment.
FIG. 2 is a side cross-sectional view of the semiconductor device of FIG. 1 .
FIG. 3 is a bottom view of the semiconductor device of FIG. 1 .
4 is another example of the semiconductor device of FIG. 2 .
FIG. 5 is an example of a package in which a phosphor layer is disposed on the semiconductor device of FIG. 2 .
6 is an example of a bottom view of the semiconductor device of FIG. 5 .
7 is an example of a semiconductor module including the semiconductor device of FIG. 6 .
FIG. 8 is an example of a semiconductor module including the semiconductor device of FIG. 5 .
9 is another example of the semiconductor package of FIG. 8 .
FIG. 10 is another example of a package in which a phosphor layer is disposed on the semiconductor device of FIG. 5. FIG. 11 is another example of arrangement of pads of the semiconductor device of FIG. 2. FIG. 12 is another example of arrangement of pads of the semiconductor device of FIG. to be.
13 to 15 are examples in which a plurality of semiconductor devices of FIG. 2 are connected.
16 and 17 are cross-sectional side views of a semiconductor module in which a plurality of semiconductor device packages are disposed on a circuit board according to an embodiment.

In the description of embodiments, each layer (film), region, pattern or structures are formed “on” or “under” each layer (film), region, pad or pattern of a substrate, Where described as being, "on" and "under" include both "directly" or "indirectly" formed through another layer. In addition, the reference for the upper / upper or lower of each layer will be described with reference to the drawings.

Hereinafter, a semiconductor device according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The semiconductor device is a chip, and may be a light emitting device that emits ultraviolet, infrared or visible light, a non-light emitting device, a sensing device that detects wavelength or heat, or a protection device such as a Zener diode. Hereinafter, an example of a light emitting device will be described as an example of the device, and may be defined as a package, a module, or a light emitting device to which the device is applied.

Hereinafter, it will be described with reference to the accompanying drawings.

1 is a perspective view of a semiconductor device according to an embodiment, FIG. 2 is a side cross-sectional view of the semiconductor device of FIG. 1 , FIG. 3 is a bottom view of the semiconductor device of FIG. 1 , and FIG. 4 is another example of the semiconductor device of FIG. 2 5 is an example of a package in which a phosphor layer is disposed on the semiconductor device of FIG. 2, FIG. 6 is an example of a bottom view of the semiconductor device of FIG. 5, and FIG. 7 is an example of a module having the semiconductor device of FIG. .

1 to 3 , the semiconductor device 10 may include a light emitting structure 21 and first and second reflective structures 31 and 41 disposed on opposite sides of the light emitting structure 21 . . A substrate 11 may be disposed between the first reflective structure 31 and the light emitting structure 21 . The light emitting structure 21 may be disposed between the substrate 11 and the second reflective structure 41 .

The semiconductor device 10 may emit light in a lateral direction. A side surface of the substrate 11 and the light emitting structure 21 is an outer side between the first and second reflective structures 31 and 41 , and may be a surface through which light is emitted in the Y-axis direction and the Z-axis direction.

The substrate 11 may use a light-transmitting, insulating, or conductive substrate, for example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ At least one is available. The substrate 11 may be a metal or non-metal substrate.

The light emitting structure 21 may include a first conductivity type semiconductor layer, an active layer A1 and a second conductivity type semiconductor layer. The first conductive semiconductor layer, the active layer A1 and the second conductive semiconductor layer may be stacked between the substrate 11 and the second reflective structure 41 .

The light emitting structure 21 may be formed using a compound semiconductor of a group II to group VI element. The light emitting structure 21 may be formed using a compound semiconductor of group II and group VI element or a compound semiconductor of group III and group V element. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer are, for example, semiconductor layers using a group III-V group element compound semiconductor, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP. , GaAs, GaAsP, AlGaInP, may be formed of at least one layer or multiple layers of GaP. The first conductivity type semiconductor layer may include an n-type semiconductor layer, and the second conductivity type semiconductor layer may include a p-type semiconductor layer. The active layer may emit at least one of ultraviolet light, visible light, and infrared light. The active layer may include, for example, at least one of blue, green, and red, but is not limited thereto. The light emitting structure 21 may be implemented as any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

The semiconductor device 10 may include pads 51 and 61 , and at least one of the pads 51 and 61 may be disposed outside at least one of the first and second reflective structures 31 and 41 . . For example, the pads 51 and 61 may include a first pad 51 connected to the first conductivity type semiconductor layer and a second pad 61 connected to the second conductivity type semiconductor layer. The first conductive semiconductor layer may be disposed adjacent to or in contact with the substrate 11 , and the second conductive semiconductor layer may be disposed adjacent to or in contact with the second reflective structure 341 . One or a plurality of connection electrodes may be disposed between the first pad 51 and the first conductivity type semiconductor layer and connected to each other having a via structure or a hole structure penetrating the first reflective structure 31 . One or a plurality of connection electrodes may be disposed between the second pad 61 and the second conductive semiconductor layer having a via structure or a hole structure penetrating through the second reflective structure 41 and connected thereto. The pad may be disposed in a bottom direction of the semiconductor device 10 . The bottom of the pad may be disposed on the same plane as the bottom surface of the semiconductor device 10 .

A transmissive electrode layer and/or a reflective electrode layer may be disposed between the light emitting structure 21 and the second reflective structure 41 , but the present disclosure is not limited thereto. A transmissive material or a reflective material may be disposed between the substrate 11 and the first reflective structure 31 , but is not limited thereto.

In the semiconductor device 10 , a first direction may be a length in a Y-axis direction, a second direction may be a thickness in an X-axis direction, and a third direction may be a length in the Z-axis direction. The Y-axis direction may be a direction perpendicular to the X-axis direction and the Z-axis direction. The length in the Y-axis direction may be greater than the length in the X-axis direction, and the length in the Z-axis direction may be equal to or greater than the length in the Y-axis direction. The thickness of the semiconductor device 10 may be less than 1 mm, thereby providing a thin-film device.

The semiconductor device 10 includes a first side S1 opposite to the bottom fourth side S4, second and third sides S2 and S3 opposite to each other, and fifth and sixth sides opposite to each other as shown in FIG. 2 . Sides S5 and S6 may be disposed. The first, 4, 5, and 6 side surfaces S1, S4, S5, and S6 may be exposed in the outward direction between the first and second reflective structures 31 and 41 or in the Y-axis direction and the Z-axis direction. .

The light emitting structure 21 and the substrate 11 are blocked by the first and second reflective structures 31 and 41 in the second and third side (S2, S3) directions, Six side surfaces S1, S4, S5, and S6 may be exposed. The fourth side S4 is a bottom surface of the semiconductor device 10 , and may be a surface facing the circuit board 81 of FIG. 7 . Accordingly, when the semiconductor device 10 is disposed on the circuit board 81 of FIG. 7 , light may be emitted through at least three surfaces, for example, the first, fifth, and sixth side surfaces S1 , S5 , and S6 . .

The first pad 51 is disposed on the outer second side S2 of the first reflective structure 31 , and the second pad 61 is disposed on the third outer side S2 of the second reflective structure 41 . S3) may be disposed. The first and second pads 51 and 61 may be disposed on second and third sides S2 and S3 opposite to each other of the semiconductor device 10 , and may be disposed at positions corresponding to each other or displaced from each other.

As shown in FIG. 3 , the first and second pads 51 and 61 are disposed at a central position in the Z-axis direction of the semiconductor device 10 , or as shown in FIG. 4 , the first pad 51 has the first reflective structure. A plurality of the second pads 61 are disposed on the second reflective structure 41 to be separated from each other or connected to each other in an arm pattern, or a plurality of the second pads 61 are disposed on the second reflective structure 41 or separated from each other or in an arm pattern. can be connected to each other. The distances D1 and D2 between the plurality of first pads 51 and 51A or the plurality of second pads 61 and 61A may be the same or different from each other, and may be 1/4 or more of the length of the semiconductor device, Current diffusion can be achieved.

The first and second pads 51 and 61 may be formed of a metal, for example, Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf. , Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO may be formed as a single layer or multiple layers using one or more materials or alloys. have.

2, the first reflective structure 31 may be formed of a DBR (distributed Bragg reflection) structure in which a first layer 32 and a second layer 33 having different refractive indices are alternately disposed, The first layer 32 is SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , Any one of Ta ₂ O ₅ , and the second layer 33 may be formed of any material other than the first layer 32 . The pair of the first layer 32 and the second layer 33 may be 5 or more pairs, for example, 5 to 50 pairs, and may be provided of, for example, TiO ₂ and SiO ₂ or Ta ₂ O ₅ and SiO ₂ . . When the first layer 32 is SiO ₂ , it may be 50 nm or more, and when the second layer 33 is TiO ₂ , it may be 30 nm or more.

2, the second reflective structure 41 may be formed of a distributed Bragg reflection (DBR) structure in which a third layer 42 and a fourth layer 43 having different refractive indices are alternately disposed, The third layer 42 is any one of SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ , and the fourth layer 43 is formed of any material other than the third layer 42 . can be A pair of the third layer 42 and the fourth layer 43 may be 5 or more pairs, for example, 5 to 50 pairs. When the third layer 42 is SiO ₂ , it may have a thickness of 50 nm or more, and when the fourth layer 43 is TiO ₂ , it may have a thickness of 30 nm or more.

At least one of the first and second reflective structures 31 and 41 may be omni-directional reflection (ODR). The ODR structure may include, for example, a stacked structure of SiO ₂ /ITO/Ag. At least one of the first and second reflective structures 31 and 41 may be a complex reflective structure having DBR and ODR, and the complex reflective structure includes a multilayer pair structure of SiO ₂ /TiO ₂ and an ITO/Ag structure. can do.

The first and second reflective structures 31 and 41 may be disposed parallel to each other. The area of the second side surface S2 of the first reflective structure 31 may be the same as the area of the upper surface or the lower surface of the light emitting structure 21 or the area of the upper surface or the lower surface of the substrate 11 . The area of the second side surface S2 of the first reflective structure 31 may be the same as the area of the third side surface S3 of the second reflection structure 41 . Since the first and second reflective structures 31 and 41 are disposed in the same area, light emitted from the light emitting structure 21 in the X-axis direction may be effectively reflected. Lights reflected by the first and second reflective structures 31 and 41 may be emitted in a lateral direction of the semiconductor device 10 .

The embodiment may provide a side view type device by using the semiconductor device 10 that emits light in a lateral direction.

5 and 6 , a semiconductor device package 10A may include the semiconductor device 10 and a phosphor layer 71 disposed on a surface thereof. The phosphor layer 71 may be formed on a surface of the semiconductor device 10 , excluding the fourth side S4 , which is the bottom. The phosphor layer 71 is disposed on the surface of the first reflective structure 31 , the surface of the second reflective structure 41 , and side surfaces of the substrate 11 and the light emitting structure 21 , and the wavelength of the incident light can be converted The thickness of the semiconductor device package 10A may be 1.2 mm or less, for example, 0.8 mm to 1.2 mm, to provide a thin film package. By providing such a package with a thin thickness, it can be applied to a mobile phone or other portable products, thereby reducing the size.

The phosphor layer 71 may be disposed outside the first pad 51 and the second pad 61 . Since the phosphor layer 71 is disposed in an area except for the bottom of the semiconductor device 10 , the bottom of the first and second pads 51 and 61 may be exposed.

The phosphor layer 71 may include a phosphor added to a light-transmitting resin material. The light-transmitting resin material may include a material such as silicone or epoxy, and the phosphor may be selectively formed from among YAG, TAG, Silicate, Nitride, and Oxy-nitride-based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, or different kinds of phosphors.

The phosphor layer 71 may include different phosphor layers. In the different phosphor layers, a first layer is any one of red, yellow, and green phosphor layers, and a second layer is formed on the first layer. and may be formed of a phosphor layer different from that of the first layer.

A diffusing agent such as a bead of a high refractive material may be included in the phosphor layer 71 .

7 is an example of a semiconductor module in which a circuit board is disposed under the semiconductor device of FIG. 2 , and FIG. 8 is an example of a semiconductor module in which the circuit board is disposed under the semiconductor device package of FIG. 5 .

Referring to FIG. 7 , in the semiconductor module 80 , a semiconductor device 10 or a semiconductor device package 10A may be disposed on a circuit board 81 . The semiconductor device package 10A is a semiconductor including a substrate 11 , a light emitting structure 21 , a first reflective structure 31 and a second reflective structure 41 , and first and second pads 51 and 61 . The device 10 may be included or a phosphor layer 71 may be disposed on the surface of the semiconductor device 10 as shown in FIG. 8 .

The circuit board 81 has a circuit pattern and may include a resin-based PCB, a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB), and the like, but is not limited thereto.

The circuit board 81 includes a first electrode 83 and a second electrode 85 thereon, and the first electrode 83 is connected to the first pad 51 of the semiconductor device 10 , , the second electrode 85 may be connected to the second pad 61 of the semiconductor device 10 . The first electrode 83 and the second pad 61, and the second electrode 85 and the second pad 61 may be joined with a conductive adhesive, for example, solder or paste, or a material such as eutectic bonding. have.

The circuit board 81 may have a reflective layer, for example, a solder resist material formed thereon, to reflect incident light.

The circuit board 81 may have the same top area as the bottom surface of the semiconductor device package 10A as shown in FIG. 8 . A side surface of the circuit board 81 may be disposed on the same plane as a side surface of the semiconductor device package 10A. The semiconductor module 80 may be defined as a unit light emitting module having a single semiconductor package.

Here, as shown in FIG. 8 , the semiconductor module 80 is formed by mounting the semiconductor device 10 on the circuit board 81 , and then forming the phosphor layer 71 , and then cutting it in units of semiconductor modules to form a package. can provide Accordingly, the top surface area of the circuit board 81 may be the same as the bottom area of the semiconductor device package 10A.

9 is another example of the semiconductor module of FIG. 8 .

Referring to FIG. 9 , a recess 87 may be included in an upper portion of the circuit board 81 , and the recess 87 may be concave in a direction from an upper surface to a lower surface of the circuit board 81 . The width of the recess 87 may be smaller than the distance between the two adjacent electrodes 83 and 85 , and the length may be equal to or smaller than the length of the semiconductor device 10 . The length of the recess 82 in the Z direction in FIG. 1 may be 1/2 or more to 1 or less of the length of the semiconductor device 10 . The depth of the recess 87 may be formed to be less than 1/2 of the thickness of the circuit board 81 . The recess 87 may be disposed to overlap the semiconductor device 10 in a vertical direction.

The recess 87 may have the adhesive 87A disposed therein. The adhesive 87 may be attached to the lower surface of the semiconductor device 10 . The adhesive 87 may attach the semiconductor device 10 so that the circuit board 81 is in close contact with each other. The adhesive 87 is a resin material, and includes, for example, at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. can In addition, the adhesive 87 may be a reflective material that reflects light emitted from the semiconductor device 10 or a material that radiates heat, for example, a high refractive index filler such as Al ₂ O ₃ , SiO ₂ , TiO ₂ . It may be a resin containing, or may include white silicone (white silicone).

10 is a side view illustrating another example of a semiconductor device package according to an embodiment.

Referring to FIG. 10 , in the semiconductor device package, a phosphor layer 71 may be disposed outside the semiconductor device 10 . The phosphor layer 71 may be disposed in a region other than the first and second pads 51 and 61 of the semiconductor device 10 . The first and second pads 51 and 61 may be exposed from the phosphor layer 71 . The phosphor layer 71 is spaced apart from the bottom of the semiconductor device 10 , or lower portions of the phosphor layer 71 except for the first and second pads 51 and 61 are exposed to the bottom of the semiconductor device 10 . can be

11 and 12 are other examples of arrangement of pads of a semiconductor device according to an embodiment.

Referring to FIG. 11 , the first and second pads 51 and 61 may be disposed on the second side surface S2 of the first reflective structure 31 of the semiconductor device. The first and second pads 51 and 61 may be disposed on one side surface of the semiconductor device, and may be selectively connected to the layers of the light emitting structure 21 to be electrically connected to electrodes of the circuit board. The distance D3 between the first and second pads 51 and 61 may be 1/3 or more of the length of the semiconductor device, thereby reducing interference with each other.

The first and second pads 51 and 61 may be adjacent to the bottom of the semiconductor device or disposed under the second side surface S2 to be bonded to the electrodes of the circuit board 81 . Since the first and second pads 51 and 61 are disposed on the first reflective structure 31 of the semiconductor device, the electrode pattern of the circuit board 81 may be simplified, and the light emitting structure 21 may be bonded by bonding. ) can be blocked from affecting the side.

Referring to FIG. 12 , the first and second pads 51 and 61 of the semiconductor device may be disposed on the third side surface S3 of the second reflective structure 41 . The first and second pads 51 and 61 may be disposed on one side surface of the semiconductor device, and may be selectively connected to the layers of the light emitting structure 21 to be electrically connected to electrodes of the circuit board. The distance D4 between the first and second pads 51 and 61 may be 1/3 or more of the length of the semiconductor device, thereby reducing interference with each other.

The first and second pads 51 and 61 may be adjacent to the bottom of the semiconductor device or disposed under the third side surface S3 to be bonded to the electrodes of the circuit board 81 . Since the first and second pads 51 and 61 are disposed on the second reflective structure 41 of the semiconductor device, the electrode pattern of the circuit board 81 can be simplified and the light emitting structure 21 by bonding. ) can be blocked from affecting the side.

13 to 15 are examples in which a plurality of semiconductor devices of FIG. 2 are connected.

As shown in FIG. 13 , by disposing semiconductor devices adjacent to each other, the first and second pads 51 and 61 of the two semiconductor devices may be connected in series, and as shown in FIG. 14 , the two pads 51 and 61 may be connected to form two The semiconductor devices may be connected in parallel. 15 , first and second pads 51 and 61 are disposed at both ends of the two semiconductor devices. To this end, the two semiconductor devices are brought into close contact, and pads disposed between the two semiconductor devices are removed and the pads of the two semiconductor devices are directly connected to each other, thereby reducing the number of pads of the two semiconductor devices. 15 illustrates that two semiconductor devices may be connected in series. In the semiconductor device shown in FIGS. 13 to 15, two or more semiconductor devices may be closely connected to each other, and a phosphor layer may be disposed on the surface. In addition, by disposing a circuit board on the lower side, it is possible to supply power to each pad.

16 to 17 are cross-sectional side views of a semiconductor module in which a plurality of semiconductor device packages are disposed on a circuit board according to an embodiment.

16 and 17 , a semiconductor module is an example in which a plurality of semiconductor device packages 10A, 10B, and 10C are arranged on a circuit board 81 . The plurality of semiconductor device packages 10A, 10B, and 10C may be spaced apart from each other or disposed in close contact with each other.

The plurality of semiconductor device packages 10A, 10B, and 10C may emit blue, green, and red light, respectively. In this case, the plurality of semiconductor device packages 10A, 10B, and 10C may be defined as a unit pixel, and each of the semiconductor device packages 10A, 10B, and 10C may be a sub-pixel. These pixels may be arranged in one direction or may be arranged in a matrix form of pixels 15 as shown in FIG. 17 .

The plurality of semiconductor device packages 10A, 10B, and 10C may emit light of the same color, for example, blue, green, red, or white. In such a semiconductor module, an optical member such as a light guide plate or an optical sheet may be disposed in an emission direction. An optical lens may be disposed on the semiconductor module to diffuse incident light.

The semiconductor device package according to the embodiment may be applied to a light source device. The light source device may be applied to a display device, a lighting device, a vehicle lamp, such as a fog lamp, a side lamp, a turn indicator, a brake lamp, a tail lamp, a reversing lamp, a high beam, a low beam, and a fog lamp according to an industrial field.

The light source device may include at least one of an optical lens and an optical sheet having a light guide plate in the light emission area. As an example of the light source device, the display device includes a bottom cover, a reflecting plate disposed on the bottom cover, a semiconductor module that emits light and includes a light emitting device, and is disposed in front of the reflecting plate and guides light emitted from the light emitting module to the front. A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel; It may include a color filter disposed in front. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. Also, the display device may have a structure in which light emitting devices emitting red, green, and blue light are respectively disposed without including a color filter.

As another example of the light source device, the head lamp is a semiconductor module including a semiconductor device or a light emitting device package disposed on a substrate, a reflector that reflects light irradiated from the semiconductor module in a predetermined direction, for example, forward, and a reflector. It may include a lens that refracts the light reflected by the forward direction, and a shade that blocks or reflects a portion of light reflected by the reflector and directed to the lens to form a light distribution pattern desired by the designer.

A lighting device, which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply unit, an inner case, and a socket. In addition, the light source device according to the embodiment may further include any one or more of a member and a holder.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

Although the embodiment has been described above, it is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are not exemplified above in the range that does not depart from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And the differences related to these modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

10: semiconductor element
10A, 10B, 10C: semiconductor device package
11: Substrate
21: light emitting structure
31: first reflective structure
41: second reflective structure
51,61: pad
71: phosphor layer
81: circuit board

Claims (9)

a first reflective structure and a second reflective structure disposed on opposite sides of each other; a light emitting structure disposed between the first reflective structure and the second reflective structure; and at least one pad disposed outside at least one of the first reflective structure and the second reflective structure; and
It includes a circuit board disposed under the semiconductor device,
The pad is disposed on a side adjacent to the bottom surface of the semiconductor device on the outside of at least one of the first and second reflective structures, and is electrically connected to the light emitting structure,
The outer side of the light emitting structure is open from the first and second reflecting structures to the outside between the first and second reflecting structures,
a recess is included on the circuit board;
The recess is disposed to overlap the semiconductor device in a vertical direction, and is disposed not to overlap the at least one pad in a vertical direction,
An adhesive is disposed in the recess, and the adhesive is attached to a lower surface of the semiconductor device. a first reflective structure and a second reflective structure disposed on opposite sides of each other; a light emitting structure disposed between the first reflective structure and the second reflective structure; and a plurality of pads disposed outside at least one of the first reflective structure and the second reflective structure; and
a circuit board disposed under the semiconductor device;
an adhesive disposed between the circuit board and the semiconductor device;
the circuit board vertically overlaps the semiconductor device and includes a recess concave in a direction from an upper surface to a lower surface of the circuit board;
wherein the adhesive is disposed in the recess;
The pad is disposed on a side adjacent to the bottom surface of the semiconductor device on the outside of at least one of the first and second reflective structures, and is electrically connected to the light emitting structure,
The outer side of the light emitting structure is open from the first and second reflecting structures to the outside between the first and second reflecting structures,
The distance between the pads is at least 1/4 of the length of the semiconductor device. According to claim 1 or 2, comprising a substrate disposed between the first reflective structure and the light emitting structure,
The light emitting structure is disposed between the substrate and the second reflective structure,
The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer disposed between the substrate and the second reflective structure,
wherein the pad includes a first pad connected to the first conductivity type semiconductor layer and a second pad connected to the second conductivity type semiconductor layer. delete delete According to claim 1 or 2, comprising a phosphor layer disposed on the surface of the semiconductor device,
The phosphor layer is disposed on an upper surface and four side surfaces of the semiconductor device. The semiconductor module according to claim 1 or 2, wherein the first and second reflective structures include DBR structures. The semiconductor device according to claim 1 or 2, wherein the semiconductor device is disposed between the first and second reflective structures in a top surface direction of the semiconductor device and in two lateral directions in which the first and second reflective structures are not disposed. A semiconductor module that emits light. delete

Images