KR20190022210A - Semiconductor device and semiconductor module - Google Patents

Abstract

The present invention provides a semiconductor module having one or more semiconductor device packages. According to an embodiment of the present invention, the semiconductor module comprises a semiconductor device and a circuit substrate. The semiconductor device includes: a first reflection structure and a second reflection structure arranged on sides opposite to each other; a light emitting structure arranged between the first reflection structure and the second reflection structure; and at least one pad which is arranged on the outside of at least one of the first reflection structure and the second reflection structure. The circuit substrate is arranged with a bottom surface of the semiconductor device arrange, wherein the pad is arranged on a lateral surface adjacent to the bottom surface of the semiconductor device on the outside of at least one of the first reflection structure and the second reflection structure and is electrically coupled to the light emitting structure, and an outer lateral surface of the light emitting structure can be opened from the first reflection structure and the second reflection structure on the outside between the first reflection structure and the second reflection structure.

Description

Technical Field [0001] The present invention relates to a semiconductor device and a semiconductor module,

Embodiments relate to semiconductor devices.

An embodiment relates to a light emitting element.

An embodiment relates to a semiconductor module having a semiconductor element or a light emitting element.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a Group III-V or Group II-VI compound semiconductor material can be used for a variety of applications such as red, Blue and ultraviolet rays can be realized. In addition, a light emitting device such as a light emitting diode or a laser diode using a Group III-V or Group-VI-VI compound semiconductor material can realize a white light source having high efficiency by using a fluorescent material or combining colors. Such a light emitting device has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environment friendliness compared with conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a Group III-V or Group-VI-VI compound semiconducting material, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. Further, such a light receiving element has advantages of fast response speed, safety, environmental friendliness and easy control of element materials, and can be easily used for power control or microwave circuit or communication module.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diode (LED) lighting devices, automotive headlights, traffic lights, and gas and fire sensors. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

The light emitting device can be provided as a pn junction diode having a characteristic in which electric energy is converted into light energy by using a group III-V element or a group II-VI element in the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, a blue light emitting element, a green light emitting element, an ultraviolet (UV) light emitting element, and a red (RED) light emitting element using a nitride semiconductor are commercially available and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm. It is used for sterilizing and purifying in the wavelength band, short wavelength, Can be used.

 Ultraviolet rays can be divided into UV-A (315nm-400nm), UV-B (280nm-315nm) and UV-C (200nm-280nm) in the order of long wavelengths. UV-A (315nm-400nm) has been applied in various fields such as UV curing for industrial use, curing of printing ink, exposure machine, discrimination of counterfeit, photocatalytic disinfection and special illumination (aquarium / ) Area is used for medical use, and the UV-C (200nm-280nm) area is applied to air purification, water purification, sterilization products and the like.

On the other hand, a semiconductor device capable of providing a high output has been requested, and a semiconductor device capable of increasing a power by applying a high power source has been studied.

In addition, studies are being made on a method for improving the light extraction efficiency of a semiconductor device and improving the light intensity at a package end in a semiconductor device package. Further, studies are being made on a method for improving bonding strength between a frame of a package and a semiconductor device in a semiconductor device package.

In addition, studies have been made on a method for reducing the manufacturing cost and improving the manufacturing yield by improving the process efficiency and changing the structure in the semiconductor device package.

Embodiments provide a semiconductor device that emits light to at least three sides.

Embodiments can provide a semiconductor device that emits light in the lateral direction by the opposite-side reflection structure.

The embodiment can provide a semiconductor device package having a phosphor layer that covers the light emitting structure and the reflective structure opposite to each other.

Embodiments can provide a semiconductor module having one or more semiconductor device packages.

A semiconductor module according to an embodiment includes: a first reflective structure and a second reflective structure disposed on opposite sides; A light emitting structure disposed between the first reflective structure and the second reflective structure; And at least one pad disposed outside of at least one of the first reflective structure and the second reflective structure; And a circuit board on which the bottom surface of the semiconductor element is disposed, the pad being disposed on a side surface adjacent to a bottom surface of the semiconductor element outside at least one of the first and second reflective structures, And an outer surface of the light emitting structure may be opened from the first and second reflective structures on the outer side between the first and second reflective structures.

According to an embodiment of the present invention, there is provided a light emitting device, comprising a substrate disposed between the first reflective structure and the light emitting structure, the light emitting structure being disposed between the substrate and the second reflective structure, A first conductive semiconductor layer disposed between the first conductive semiconductor layer and the reflective structure, an active layer, and a second conductive semiconductor layer disposed between the reflective structures, the pad having a first pad connected to the first conductive semiconductor layer, And a second pad.

According to an embodiment, the first pad may be disposed outside the first reflective structure, and the second pad may be disposed outside the second reflective structure.

According to an embodiment, the first pad and the second pad may be disposed outside the first reflective structure or the second reflective structure.

According to the embodiment, a phosphor layer is formed on the surface of the semiconductor element, and the phosphor layer can be disposed on the side surface of the light emitting structure, the surfaces of the first and second reflecting structures.

According to an embodiment, the first and second reflective structures may include a DBR structure.

According to the embodiment, the light emitting structure can emit light through three side surfaces.

According to the embodiment, the semiconductor element is open at least three sides, and the semiconductor element may include a plurality of semiconductor elements emitting the same peak wavelength or different peak wavelengths with respect to each other.

The embodiment can provide a semiconductor package having a thin thickness.

The embodiment has the effect of disposing the reflection structure on the opposite sides of the light emitting structure to emit light in the lateral direction.

The embodiment has the effect of arranging the phosphor layers on the surfaces of the light emitting structure and the reflecting structure to emit the light with the wavelength-shifted in the lateral direction.

The embodiment can reduce the size of a semiconductor module in which a plurality of semiconductor device packages are arranged.

The embodiment can improve the reliability of the light emitting device having the semiconductor module, the display device, and the lighting device.

1 is a perspective view of a semiconductor device according to an embodiment.
2 is a side cross-sectional view of the semiconductor device of Fig.
3 is a bottom view of the semiconductor device of FIG.
4 is another example of the semiconductor device of Fig.
5 is an example of a package in which a phosphor layer is disposed on the semiconductor element of Fig.
6 is an example of a bottom view of the semiconductor device of Fig.
7 is an example of a semiconductor module having the semiconductor element of Fig.
8 is an example of a semiconductor module having the semiconductor element of Fig.
9 is another example of the semiconductor package of Fig.
The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device, to be.
Figs. 13 to 15 are examples in which a plurality of semiconductor elements of Fig. 2 are connected.
16 and 17 are side cross-sectional views of a semiconductor module in which a plurality of semiconductor device packages according to an embodiment are disposed on a circuit board.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on "and " under " include both being formed" directly "or" indirectly " Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

Hereinafter, a semiconductor device according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The semiconductor device may be a light emitting device that emits light of ultraviolet, infrared, or visible light, a non-light emitting device, a sensing device that senses wavelength or heat, or a protection device such as a zener diode. Hereinafter, an example of a device will be described as an example of a light emitting device, and may be defined as a package, a module, or a light emitting device to which the device is applied.

Hereinafter, the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a perspective view of a semiconductor device according to an embodiment, FIG. 2 is a side sectional view of the semiconductor device of FIG. 1, FIG. 3 is a bottom view of the semiconductor device of FIG. 1, 5 is an example of a package in which a phosphor layer is disposed in the semiconductor element of Fig. 2, Fig. 6 is an example of a bottom view of the semiconductor element of Fig. 5, and Fig. 7 is an example of a module having the semiconductor element of Fig. 2 .

1 to 3, the semiconductor device 10 may include a light emitting structure 21, first and second reflective structures 31 and 41 disposed on opposite sides of the light emitting structure 21, . A substrate 11 may be disposed between the first reflective structure 31 and the light emitting structure 21. The light emitting structure 21 may be disposed between the substrate 11 and the second reflective structure 41.

The semiconductor element 10 can emit light in the lateral direction. The side surfaces of the substrate 11 and the light emitting structure 21 may be the outer surfaces between the first and second reflecting structures 31 and 41 and the surfaces on which light is emitted in the Y axis direction and the Z axis direction.

The substrate 11 may take advantage of a light-transmitting, insulating or conductive substrate, e.g., sapphire (Al ₂ O _3), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ of At least one can be used. The substrate 11 may be a metal or non-metal substrate.

The light emitting structure 21 may include a first conductive semiconductor layer, an active layer A1, and a second conductive semiconductor layer. The first conductive type semiconductor layer, the active layer A1 and the second conductive type semiconductor layer may be stacked between the substrate 11 and the second reflective structure 41.

The light emitting structure 21 may be formed using a compound semiconductor of group II to VI elements. The light emitting structure 21 may be formed using a compound semiconductor of Group II and VI elements or a compound semiconductor of Group III and V elements. The first conductive semiconductor layer and the second conductive semiconductor layer may be formed of a semiconductor layer using a compound semiconductor of Group III-V elements, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP , GaAs, GaAsP, AlGaInP, GaP, or the like. The first conductive semiconductor layer may include an n-type semiconductor layer, and the second conductive semiconductor layer may include a p-type semiconductor layer. The active layer may emit at least one of ultraviolet rays, visible rays, and infrared rays. The active layer may include, for example, at least one of blue, green, and red, but is not limited thereto. The light emitting structure 21 may have any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

The semiconductor device 10 includes pads 51 and 61 and at least one pad 51 and 61 may be disposed outside at least one of the first and second reflective structures 31 and 41 . For example, the pads 51 and 61 may include a first pad 51 connected to the first conductive semiconductor layer and a second pad 61 connected to the second conductive semiconductor layer. The first conductive semiconductor layer may be disposed adjacent to or in contact with the substrate 11 and the second conductive semiconductor layer may be disposed adjacent to or in contact with the second reflective structure 341. One or a plurality of connection electrodes may be disposed between the first pad 51 and the first conductive semiconductor layer to have a via structure or a hole structure passing through the first reflection structure 31, One or a plurality of connection electrodes may be disposed between the second pads 61 and the second conductive semiconductor layer to have a via structure or a hole structure passing through the second reflection structure 41. The pad may be disposed in the bottom direction of the semiconductor device 10. [ The bottom of the pad may be disposed in the same plane as the bottom surface of the semiconductor element 10.

A light-transmitting electrode layer and / or a reflective electrode layer may be disposed between the light-emitting structure 21 and the second reflective structure 41, but the present invention is not limited thereto. A light-transmissive material or a reflective material may be disposed between the substrate 11 and the first reflective structure 31, but the present invention is not limited thereto.

In the semiconductor device 10, the first direction may be the length in the Y-axis direction, the second direction may be the thickness in the X-axis direction, and the third direction may be the length in the Z-axis direction. The Y-axis direction may be a direction orthogonal to the X-axis direction and the Z-axis direction. The length in the Y-axis direction may be greater than the length in the X-axis direction, and the length in the Z-axis direction may be equal to or greater than the length in the Y-axis direction. The thickness of the semiconductor element 10 may be less than 1 mm, thereby providing a thin film device.

The semiconductor device 10 includes a first side S1 opposite to the fourth side S4 on the bottom side, second and third sides S2 and S3 opposite to each other, The side surfaces S5 and S6 can be disposed. The first, fourth, fifth, and sixth sides S1, S4, S5, and S6 may be outward between the first and second reflective structures 31 and 41, or may be exposed in the Y axis direction and the Z axis direction .

The light emitting structure 21 and the substrate 11 are blocked by the first and second reflective structures 31 and 41 in the second and third side faces S2 and S3, Six sides S1, S4, S5, and S6 may be exposed. The fourth side surface S4 may be a bottom surface of the semiconductor element 10 and a surface facing the circuit board 81 (FIG. 7). Accordingly, when the semiconductor element 10 is disposed on a circuit board (81 in FIG. 7), light can be emitted through at least three sides, for example, the first, fifth, and sixth sides S1, S5, and S6 .

The first pad 51 is disposed on an outer second side S2 of the first reflective structure 31 and the second pad 61 is disposed on an outer third side of the second reflective structure 41 S3. The first and second pads 51 and 61 are disposed on the second and third side surfaces S2 and S3 of the semiconductor device 10 opposite to each other and may be disposed at positions corresponding to or offset from each other.

As shown in FIG. 3, the first and second pads 51 and 61 are disposed at a central position in the Z-axis direction of the semiconductor device 10, A plurality of second pads (61) are arranged on the first reflecting structure (31) and connected to each other in an arm pattern, or the second pads (61) are arranged on the second reflecting structure (41) Can be connected to each other. The intervals D1 and D2 between the first pads 51 and 51A or between the second pads 61 and 61A may be equal to or different from each other and may be equal to or greater than 1/4 of the length of the semiconductor device, Current diffusion can be achieved.

The first and second pads 51 and 61 may be formed of a metal such as Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Layer or multi-layer using at least one material or alloy selected from among Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / have.

As shown in FIG. 2, the first reflection structure 31 may be formed of a distributed Bragg reflection (DBR) structure in which first and second layers 32 and 33 having different refractive indices are alternately arranged, The first layer 32 may be made of SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , Ta ₂ O ₅ , and the second layer 33 may be formed of any material other than the first layer 32. The pair of the first layer 32 and the second layer 33 may be 5 pairs or more, for example 5 pairs to 50 pairs, and may be provided, for example, with TiO ₂ and SiO ₂ or Ta ₂ O ₅ and SiO ₂ . The first layer 32 may be at least 50 nm in the case of SiO ₂ and may be at least 30 nm in the case where the second layer 33 is TiO ₂ .

2, the second reflection structure 41 may be a DBR (distributed Bragg reflection) structure in which the third layer 42 and the fourth layer 43 having different refractive indices are alternately arranged, The third layer 42 is formed of one of SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ and TiO ₂ and the fourth layer 43 is formed of any material other than the third layer 42. . The pair of the third layer 42 and the fourth layer 43 may be 5 pairs or more, for example, 5 pairs to 50 pairs. The third layer 42 may be at least 50 nm when SiO ₂ is used, and may be at least 30 nm when the fourth layer 43 is TiO ₂ .

At least one of the first and second reflective structures 31 and 41 may be an Omni-directional reflection (ODR). The ODR structure may include, for example, a stacked structure of SiO ₂ / ITO / Ag. At least one of the first and second reflective structures 31 and 41 may be a composite reflective structure having a DBR and an ODR, the composite reflective structure including a multilayer pair structure of SiO ₂ / TiO ₂ and an ITO / Ag structure can do.

The first and second reflective structures 31 and 41 may be disposed parallel to each other. The area of the second side surface S2 of the first reflective structure 31 may be equal to the area of the upper surface or the lower surface of the light emitting structure 21 or the upper surface or the lower surface of the substrate 11. [ The area of the second side surface S2 of the first reflective structure 31 may be equal to the area of the third side surface S3 of the second reflective structure 41. [ Since the first and second reflective structures 31 and 41 are disposed in the same area, the light emitted in the X-axis direction from the light emitting structure 21 can be effectively reflected. The light reflected by the first and second reflective structures 31 and 41 can be emitted laterally of the semiconductor element 10.

The embodiment can provide a side view type device using the semiconductor device 10 that emits light in the lateral direction.

5 and 6, the semiconductor device package 10A may include the semiconductor element 10 and a phosphor layer 71 disposed on the surface thereof. The phosphor layer 71 may be formed on a surface of the semiconductor element 10 other than the fourth side surface S4. The phosphor layer 71 is disposed on the surface of the first reflective structure 31, the surface of the second reflective structure 41, the substrate 11 and the side of the light emitting structure 21, Lt; / RTI > The semiconductor device package 10A may have a thickness of 1.2 mm or less, for example, in a range of 0.8 mm to 1.2 mm, thereby providing a thin film package. By providing such a package with a thin thickness, it can be applied to cell phones and other portable products to reduce its size.

The phosphor layer 71 may be disposed outside the first pad 51 and the second pad 61. Since the phosphor layer 71 is disposed in a region other than the bottom of the semiconductor device 10, the bottoms of the first and second pads 51 and 61 may be exposed.

The phosphor layer 71 may include a phosphor added in the light-transmitting resin material. The light transmitting resin material may include a material such as silicon or epoxy, and the phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, or may include different kinds of phosphors.

The phosphor layers 71 may include different phosphor layers, and the different phosphor layers may include a phosphor layer in which the first layer is a red phosphor layer, a yellow phosphor layer, and a green phosphor layer, and the second layer is formed on the first layer And may be formed of a phosphor layer different from the first layer.

The phosphor layer 71 may include a diffusing agent such as a bead of a high refractive index material.

FIG. 7 is an example of a semiconductor module in which a circuit board is disposed under the semiconductor device of FIG. 2, and FIG. 8 is an example of a semiconductor module of a circuit board under the semiconductor device package package of FIG.

7, the semiconductor module 80 may be arranged on the circuit board 81 with the semiconductor element 10 or the semiconductor element package 10A. The semiconductor device package 10A includes a substrate 11, a light emitting structure 21, a first reflective structure 31 and a second reflective structure 41, and a semiconductor having a first and a second pads 51 and 61 And the phosphor layer 71 may be disposed on the surface of the semiconductor element 10 as shown in FIG.

The circuit board 81 has a circuit pattern and may include a resin-based PCB, a metal core PCB (MCPCB), a flexible PCB (FPCB), or the like, but is not limited thereto.

The circuit board 81 includes a first electrode 83 and a second electrode 85 on an upper portion thereof and the first electrode 83 is connected to the first pad 51 of the semiconductor device 10 And the second electrode 85 may be connected to the second pad 61 of the semiconductor device 10. The first electrode 83 and the second pad 61 and the second electrode 85 and the second pad 61 may be bonded with a conductive adhesive such as solder or paste or a yutetic bonding material. have.

A reflective layer, for example, a solder resist material may be formed on the circuit board 81 to reflect incident light.

The top surface area of the circuit board 81 may be the same as the bottom surface of the semiconductor device package 10A as shown in FIG. The side surface of the circuit board 81 may be disposed in the same plane as the side surface of the semiconductor device package 10A. This semiconductor module 80 may be defined as a unit light emitting module having a single semiconductor package.

8, the semiconductor module 80 is formed by mounting a semiconductor element 10 on the circuit board 81, forming a phosphor layer 71, cutting the unit semiconductor module unit, . Accordingly, the top surface area of the circuit board 81 and the bottom surface area of the semiconductor device package 10A may be the same.

9 is another example of the semiconductor module of Fig.

Referring to FIG. 9, the circuit board 81 includes a recess 87 formed on the circuit board 81, and the recess 87 may be recessed from the upper surface of the circuit board 81 in a downward direction. The width of the recess 87 may be smaller than the distance between the adjacent two electrodes 83 and 85 and the length may be equal to or less than the length of the semiconductor element 10. The length of the recess 82 may be in the Z direction in FIG. 1, but may be not less than 1/2 of the length of the semiconductor element 10 and not more than 1. The depth of the recess 87 may be less than a half of the thickness of the circuit board 81. The recess 87 may be disposed to overlap with the semiconductor device 10 in the vertical direction.

The recess 87 may be provided with the adhesive 87A. The adhesive 87 may be attached to the lower surface of the semiconductor element 10. The adhesive 87 may adhere the semiconductor elements 10 so that the circuit boards 81 are in close contact with each other. The adhesive 87 may include at least one of a resin material, a hybrid material including an epoxy-based material, a silicone-based material, an epoxy-based material, and a silicon-based material . The adhesive 87 may be a reflective material that reflects light emitted from the semiconductor device 10 or may be a material that dissipates heat. For example, the adhesive 87 may be a filler having a high refractive index such as Al ₂ O ₃ , SiO ₂ , TiO ₂ , , Or may include white silicone.

10 is a side view showing another example of the semiconductor device package according to the embodiment.

Referring to FIG. 10, the semiconductor device package may include a phosphor layer 71 disposed outside the semiconductor device 10. The phosphor layer 71 may be disposed in an area other than the first and second pads 51 and 61 of the semiconductor device 10. The first and second pads 51 and 61 may be exposed from the phosphor layer 71. The phosphor layer 71 is spaced apart from the bottom of the semiconductor element 10 or the lower portion of the phosphor layer 71 excluding the first and second pads 51 and 61 is exposed on the bottom of the semiconductor element 10 .

11 and 12 show another arrangement example of the pads of the semiconductor element according to the embodiment.

Referring to FIG. 11, the first and second pads 51, 61 may be disposed on the second side S2 of the first reflective structure 31 of the semiconductor device. The first and second pads 51 and 61 may be disposed on one side of the semiconductor device and may be selectively connected to the layers of the light emitting structure 21 and electrically connected to the electrodes of the circuit board. The distance D3 between the first and second pads 51 and 61 can be equal to or greater than one third of the length of the semiconductor device, thereby reducing interference between the first and second pads 51 and 61. [

The first and second pads 51 and 61 may be disposed adjacent to the bottom of the semiconductor device or below the second side S2 and may be bonded to the electrodes of the circuit board 81. Since the first and second pads 51 and 61 are disposed on the first reflective structure 31 of the semiconductor element, the electrode pattern of the circuit board 81 can be simplified and the light emitting structure 21 Can be prevented from influencing the side of the display panel.

Referring to FIG. 12, the first and second pads 51 and 61 of the semiconductor device may be disposed on the third side S3 of the second reflective structure 41. In FIG. The first and second pads 51 and 61 may be disposed on one side of the semiconductor device and may be selectively connected to the layers of the light emitting structure 21 and electrically connected to the electrodes of the circuit board. The distance D4 between the first and second pads 51 and 61 can be equal to or greater than one third of the length of the semiconductor device, thereby reducing the interference between the first and second pads 51 and 61.

The first and second pads 51 and 61 may be disposed adjacent to the bottom of the semiconductor device or below the third side S3 and may be bonded to the electrodes of the circuit board 81. [ Since the first and second pads 51 and 61 are disposed on the second reflective structure 41 of the semiconductor device, the electrode pattern of the circuit board 81 can be simplified and the light emitting structure 21 Can be prevented from influencing the side of the display panel.

Figs. 13 to 15 are examples in which a plurality of semiconductor elements of Fig. 2 are connected.

As shown in FIG. 13, the first and second pads 51 and 61 of two semiconductor elements can be connected in series by arranging the semiconductor elements adjacent to each other, and the two pads 51 and 61 are connected to each other Semiconductor devices can be connected in parallel. As shown in FIG. 15, first and second pads 51 and 61 are disposed at both ends of two semiconductor elements. To this end, the two semiconductor elements are brought into close contact with each other, and the pads disposed between the two semiconductor elements are removed and directly connected to each other, thereby reducing the number of pads of the two semiconductor elements. 15, two semiconductor elements may be connected in series. In the semiconductor device as shown in FIGS. 13 to 15, two or more semiconductor elements can be closely contacted to each other, and a phosphor layer can be disposed on the surface. Further, a circuit board may be disposed at a lower portion to supply power to each pad.

16 to 17 are side cross-sectional views of a semiconductor module in which a plurality of semiconductor device packages according to the embodiment are disposed on a circuit board.

16 and 17, the semiconductor module is an example in which a plurality of semiconductor device packages 10A, 10B, and 10C are arranged on a circuit board 81. [ The plurality of semiconductor device packages 10A, 10B, and 10C may be spaced apart from each other or disposed closely to each other.

The plurality of semiconductor device packages 10A, 10B, and 10C may emit blue, green, and red light, respectively. In this case, the plurality of semiconductor device packages 10A, 10B, and 10C may be defined as unit pixels, and the semiconductor device packages 10A, 10B, and 10C may be sub-pixels. These pixels may be arranged in one direction or may be arranged in a pixel 15 in the form of a matrix as shown in Fig.

The plurality of semiconductor device packages 10A, 10B, and 10C may emit the same color, for example, blue, green, red, or white. In such a semiconductor module, an optical member such as a light guide plate or an optical sheet may be disposed in the emitting direction. An optical lens is disposed on the semiconductor module to diffuse the incident light.

The semiconductor device package according to the embodiment can be applied to a light source device. The light source device may be applied to a lamp such as a display device, a lighting device, a vehicle lamp such as a fog lamp, a car light, a turn signal, a brake, a tail light, a reverse light, an upward light, a down light, and a fog light.

The above light source device may include at least one of an optical sheet having an optical lens or a light guide plate in a light output area. An example of the light source device includes a bottom cover, a reflector disposed on the bottom cover, a semiconductor module that emits light and includes a light-emitting element, and a light source that is disposed in front of the reflector and guides light emitted from the light- An optical sheet including a light guide plate, prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, And may include a color filter disposed in front thereof. Here, the bottom cover, the reflection plate, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. The display device may have a structure in which light emitting elements emitting red, green, and blue light are disposed, respectively, without including a color filter.

As another example of the light source device, the head lamp includes a semiconductor module including a semiconductor element or a light emitting device package disposed on a substrate, a reflector for reflecting light emitted from the semiconductor module in a predetermined direction, And a shade that reflects the light reflected by the reflector and blocks or reflects a part of the light that is reflected by the reflector to form a desired light distribution pattern by a designer.

The lighting device, which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply, an inner case, and a socket. Further, the light source device according to the embodiment may further include at least one of a member and a holder.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10: Semiconductor device
10A, 10B, 10C: Semiconductor device package
11: substrate
21: Light emitting structure
31: First reflective structure
41: Second reflective structure
51, 61: Pad
71: phosphor layer
81: circuit board

Claims (9)

A first reflective structure and a second reflective structure disposed on opposite sides of the first reflective structure; A light emitting structure disposed between the first reflective structure and the second reflective structure; And at least one pad disposed outside of at least one of the first reflective structure and the second reflective structure; And
And a circuit board on which the bottom surface of the semiconductor element is disposed,
Wherein the pad is disposed on a side surface adjacent to a bottom surface of the semiconductor element outside at least one of the first and second reflective structures and electrically connected to the light emitting structure,
And an outer surface of the light emitting structure is opened from the first and second reflection structures on the outer side between the first and second reflecting structures. A first reflective structure and a second reflective structure disposed on opposite sides of the first reflective structure; A light emitting structure disposed between the first reflective structure and the second reflective structure; And at least one pad disposed outside of at least one of the first reflective structure and the second reflective structure; And
A circuit board on which a bottom surface of the semiconductor device is disposed;
And an adhesive disposed between the circuit board and the semiconductor element,
Wherein the circuit board includes a recess recessed in a direction perpendicular to the semiconductor element and recessed in a downward direction on an upper surface of the circuit board,
Wherein the adhesive is disposed in the recess,
Wherein the pad is disposed on a side surface adjacent to a bottom surface of the semiconductor element outside at least one of the first and second reflective structures and electrically connected to the light emitting structure,
And an outer surface of the light emitting structure is opened from the first and second reflection structures on the outer side between the first and second reflecting structures. The light emitting device according to claim 1 or 2, further comprising a substrate disposed between the first reflective structure and the light emitting structure,
Wherein the light emitting structure is disposed between the substrate and the second reflective structure,
Wherein the light emitting structure includes a first conductive semiconductor layer disposed between the substrate and the second reflective structure, an active layer, and a second conductive semiconductor layer,
Wherein the pad comprises a first pad connected to the first conductive semiconductor layer and a second pad connected to the second conductive semiconductor layer. 4. The device of claim 3, wherein the first pad is disposed outside the first reflective structure,
And the second pad is disposed outside the second reflective structure. The semiconductor module of claim 3, wherein the first pad and the second pad are disposed outside the first reflective structure or the second reflective structure. The semiconductor device according to claim 1 or 2, further comprising a phosphor layer on the surface of the semiconductor element,
Wherein the phosphor layer is disposed on a side surface of the light emitting structure, a surface of the first and second reflecting structures.  3. The semiconductor module of claim 1 or 2, wherein the first and second reflective structures comprise a DBR structure. The semiconductor module according to claim 1 or 2, wherein the light emitting structure emits light through three lateral directions orthogonal to the first and second reflective structure directions. 3. The semiconductor device according to claim 1 or 2, wherein at least three sides of the semiconductor element are open,
Wherein the semiconductor element comprises a plurality of semiconductor elements emitting the same peak wavelength or different peak wavelengths with respect to each other.

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