KR102610607B1 - Light emitting device package - Google Patents

Abstract

A light emitting device package according to an embodiment includes a plurality of frames arranged to be spaced apart from each other; A body supporting the plurality of frames; a plurality of light emitting elements disposed on the body, each of which is electrically connected to two adjacent frames among the plurality of frames; And it may include a first resin part disposed between the body and the light-emitting device and extending to the outside of the light-emitting device.

Description

Light emitting device package {LIGHT EMITTING DEVICE PACKAGE}

The embodiment relates to a light emitting device package, a method of manufacturing a light emitting device package, and a light source device.

Semiconductor devices containing compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in a variety of ways, such as light emitting devices, light receiving devices, and various diodes.

In particular, light-emitting devices such as light emitting diodes and laser diodes using group III-V or group II-VI compound semiconductor materials have been developed into red, green, and green colors through the development of thin film growth technology and device materials. It has the advantage of being able to produce light in various wavelength bands, such as blue and ultraviolet rays. In addition, light-emitting devices such as light-emitting diodes or laser diodes using Group 3-5 or Group 2-6 compound semiconductor materials can also be implemented as highly efficient white light sources by using fluorescent materials or combining colors. Compared to existing light sources such as fluorescent lamps and incandescent lamps, these light-emitting devices have the advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness.

In addition, when light-receiving devices such as photodetectors or solar cells are manufactured using group III-V or group II-VI compound semiconductor materials, light in various wavelength ranges can be absorbed through the development of device materials to generate photocurrent. By doing so, light of various wavelengths, from gamma rays to radio wavelengths, can be used. In addition, such light-receiving devices have the advantages of fast response speed, safety, environmental friendliness, and easy control of device materials, so they can be easily used in power control, ultra-high frequency circuits, or communication modules.

Therefore, semiconductor devices can replace the transmission module of optical communication means, the light emitting diode backlight that replaces the cold cathode fluorescence lamp (CCFL) that constitutes the backlight of LCD (Liquid Crystal Display) display devices, and fluorescent or incandescent light bulbs. Applications are expanding to include white light-emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. Additionally, the applications of semiconductor devices can be expanded to high-frequency application circuits, other power control devices, and communication modules.

For example, a light emitting device can be provided as a p-n junction diode that converts electrical energy into light energy using elements from groups 3 to 5 or elements from groups 2 to 6 on the periodic table, and can be provided as a p-n junction diode of a compound semiconductor. By adjusting the composition ratio, various wavelengths can be realized.

For example, nitride semiconductors are receiving great attention in the development of optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light-emitting devices, green light-emitting devices, ultraviolet (UV) light-emitting devices, and red light-emitting devices using nitride semiconductors are commercialized and widely used.

For example, in the case of ultraviolet light-emitting devices, they are light-emitting diodes that generate light distributed in the wavelength range of 200 nm to 400 nm. In the above wavelength range, in the case of short wavelengths, they are used for sterilization and purification, and in the case of long wavelengths, they are used in exposure machines or curing machines, etc. can be used

Ultraviolet rays can be divided into three types in order of longest wavelength: UV-A (315nm~400nm), UV-B (280nm~315nm), and UV-C (200nm~280nm). The UV-A (315nm~400nm) range is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit identification, photocatalyst sterilization, and special lighting (aquarium/agricultural use, etc.), while UV-B (280nm~315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, according to the prior art, there is an issue of bonding strength between the package body and the light emitting device, and accordingly, there is a reliability issue due to a decrease in coupling strength.

Additionally, in the light emitting device package of the prior art, there are issues of bonding strength and bonding reliability between the electrodes of the package body and the light emitting device.

For example, when a conventional light emitting device package is mounted on a submount or circuit board, a high temperature process such as reflow is applied. In this case, in the reflow process, bonding between the lead frame provided in the light emitting device package and the light emitting device is performed. A re-melting phenomenon occurs in the area, weakening the stability of the electrical connection or physical bonding, resulting in problems with electrical and physical reliability.

In addition, as light-emitting devices capable of providing high output are required in current and future technologies, research is being conducted on light-emitting devices that can increase output by applying high power, but countermeasures for this are weak.

In particular, when high power is applied to a light-emitting device, the reliability of the light-emitting device may decrease, and when multiple light-emitting devices are used, the size of the semiconductor package increases.

In addition, in the prior art, research is being conducted on ways to improve the light extraction efficiency of light emitting devices and improve the luminous intensity at the package end.

In addition, in light emitting device packages in the prior art, research is being conducted on ways to reduce manufacturing costs and improve manufacturing yield by improving process efficiency and changing structures.

One of the technical challenges of the embodiment is to provide a light emitting device package that can improve the bonding strength between the package body and the light emitting device, a manufacturing method thereof, and a light source device including the same.

In addition, one of the technical challenges of the embodiment is to provide a light emitting device package that can solve problems of electrical and physical reliability in the bonding area between the electrodes of the package body and the light emitting device electrode, a manufacturing method thereof, and a light source device including the same.

In addition, one of the technical tasks of the embodiment is to provide a light emitting device package that provides high output, has excellent reliability, and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

In addition, one of the technical problems of the embodiment is to provide a light emitting device package capable of improving brightness, a manufacturing method thereof, and a light source device including the same.

In addition, one of the technical tasks of the embodiment is to provide a light emitting device package that can reduce manufacturing costs and improve manufacturing yield by improving process efficiency and changing the structure, a method of manufacturing the same, and a light source device including the same.

The technical problems of the embodiments are not limited to the matters described in this item, but include those that can be understood through the description of the invention.

A light emitting device package according to an embodiment includes a first frame 111 and a second frame 112 arranged to be spaced apart from each other; a third frame 153 disposed between the first frame 111 and the second frame 112 and spaced apart from the first frame 111 and the second frame 112; A body 113 supporting the first to third frames 111, 112, and 153; A first light emitting element (120A) disposed on the body 113 and electrically connected to the first frame 111 and the third frame 153; and a second light emitting device 120B disposed on the body 113 and electrically connected to the second frame 112 and the third frame 153.

The body 113 has a first recess (R1) in the upper area between the first frame 111 and the third frame 153, and the third frame 153 and the second frame 112. It may include a second recess (R2) in the upper area between the two sides.

The embodiment may include a first resin portion 131 disposed in the first recess (R1) and a second resin portion 132 disposed in the second recess (R2).

The first light emitting device 120A includes a first bonding part 121 and a second bonding part 122, and is disposed on the first resin part 131 to form the first frame 111 and the second bonding part 122. 3 Can be electrically connected to the frame 153.

The second light emitting device 120B includes a third bonding part 121b and a fourth bonding part 122b, and is disposed on the second resin part 132 to form the second frame 112 and the fourth bonding part 122b. 3 Can be electrically connected to the frame 153.

According to embodiments, a light emitting device package capable of improving the bonding force between the package body and the light emitting device, a manufacturing method thereof, and a light source device including the same can be provided.

In addition, according to the embodiment, a light emitting device package that has excellent electrical and physical reliability in the bonding area between the electrodes of the package body and the electrodes of the light emitting device, a manufacturing method thereof, and a light source device including the same can be provided.

For example, according to the light emitting device package and the light emitting device manufacturing method according to the embodiment, re-melting phenomenon is prevented from occurring in the bonding area of the light emitting device package during the process of rebonding the light emitting device package to the substrate, etc. There are advantages to doing this.

In addition, according to the embodiment, a light emitting device package that provides high output while being highly reliable and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same can be provided.

In addition, according to the embodiment, a light emitting device package capable of improving luminous intensity, a manufacturing method thereof, and a light source device including the same can be provided.

In addition, according to the embodiment, a light emitting device package that can reduce manufacturing costs and improve manufacturing yield by improving process efficiency and changing the structure, a method of manufacturing the same, and a light source device including the same can be provided.

The technical effects of the embodiments are not limited to the matters described in this item, but include those that can be understood through the description of the invention.

1 is a plan view of a light emitting device package according to a first embodiment.
FIG. 2 is a cross-sectional view taken along line DD of the light emitting device package shown in FIG. 1.
FIG. 3 is a conceptual diagram showing the light emitting device package shown in FIG. 1 disposed on a circuit board.
Figure 4 is a plan view of a light emitting device package according to a second embodiment.
Figure 5 is a plan view of a light emitting device package according to a third embodiment.
Figure 6 is a plan view of a light emitting device package according to a fourth embodiment.
Figure 7 is a plan view showing an example of a light-emitting device applied to a light-emitting device package according to an embodiment.
FIG. 8 is a cross-sectional view taken along line AA of the light emitting device shown in FIG. 7.
9 is a plan view illustrating the arrangement of electrodes of a light-emitting device applied to a light-emitting device package according to an embodiment.
FIG. 10 is a cross-sectional view taken along line FF of the light emitting device shown in FIG. 9.

The following embodiments will be described with reference to the attached drawings. In the description of the embodiment, each layer (film), region, pattern or structure is “on/over” or “under” the substrate, each layer (film), region, pad or pattern. In the case where it is described as being formed in a layer, “on/over” and “under” include both being formed “directly” or “indirectly through another layer.” do. In addition, the standards for top/up or bottom of each floor are explained based on the drawings, but the embodiment is not limited thereto.

Hereinafter, a light-emitting device package and a method of manufacturing a light-emitting device package according to an embodiment will be described in detail with reference to the attached drawings. Hereinafter, the description will be based on the case where a light emitting device is applied as an example of a semiconductor device.

<First Example>

First, the light emitting device package 100 according to the first embodiment will be described with reference to FIGS. 1 and 2.

FIG. 1 is a plan view of a light emitting device package 100 according to the first embodiment, and FIG. 2 is a cross-sectional view taken along line D-D of the light emitting device package shown in FIG. 1.

As shown in FIG. 1 , the light emitting device package 100 according to the first embodiment includes a package body 110 and a plurality of light emitting devices disposed on the package body 110 and can implement high-output light output. For example, the embodiment may include a first light-emitting device 120A and a second light-emitting device 120B, but is not limited thereto and can implement high-output light output by using three or more light-emitting devices.

The package body 110 may include a plurality of frames. For example, the package body 110 may include a first frame 111, a second frame 112, and a third frame 153 that are spaced apart from each other, but is not limited to this and includes four or more frames. You may.

At this time, power may be applied directly to the first frame 111 and the second frame 112 from electrodes of separate circuit boards, and the third frame 153 may not receive power directly. , It may be called an intermediate frame, a connection frame, or a bridge frame, and by connecting the plurality of light-emitting elements in series, high power can be applied and high-output optical output can be realized (6V, 9V, 12V, etc.). , when power is directly applied to the third frame 153, which is the middle frame, a dimming function can also be implemented.

In addition, the package body 110 may include a body 113 that functions as a support portion, and a number that can function as an adhesive in the upper area overlapping the first light emitting device 120A and the second light emitting device 120B. It may include a branch 130. For example, the embodiment includes a first resin part 131 and a second resin part 132 in the upper area overlapping the first light emitting device 120A and the second light emitting device 120B, respectively, and the package body and The bonding strength between light emitting devices can be improved.

Additionally, the first resin portion 131 and the second resin portion 132 may extend to the outside of the first light emitting device 120A and the second light emitting device 120B, respectively, and in this case, during bonding. Electrical reliability can be improved by preventing electrical short circuits by blocking lateral expansion of paste, etc.

Additionally, the package body 110 may include third and fifth resin parts 135 around the first and second light emitting devices 120A and 120B. For example, the fifth resin part 135 may be disposed below and/or on the side of the first and second light emitting devices 120A and 120B to perform a sealing function. Additionally, the fifth resin portion 135 may improve adhesion between the first and second light emitting devices 120A and 120B and the first to third frames 111, 112, and 153.

Hereinafter, the technical features of the applied invention will be described in more detail with reference to FIG. 2.

(Body, body recess, resin part)

Referring to FIG. 2, the light emitting device package 100 according to the embodiment includes a first frame 111, a second frame 112, and a third frame 153 spaced apart from each other in the body 113 constituting the package body. may include. The first light-emitting device 120A is disposed on the body 113 and may be electrically connected to the first frame 111 and the third frame 153, and the second light-emitting device 120B is located on the body (113). 113) and may be electrically connected to the second frame 112 and the third frame 153.

The body 113 may be disposed between the first frame 111, the third frame 153, and the second frame 112. The body 113 may function as a kind of electrode separation line. The body 113 may also be referred to as an insulating member.

For example, the body 113 is made of polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide 9T (PA9T), silicone, epoxy molding compound (EMC), It may be formed of at least one selected from the group including silicone molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. Additionally, the body 113 may include a high refractive index filler such as TiO ₂ and SiO ₂ .

Additionally, the body 113 may be disposed to extend upward to one side of the first frame 111. Additionally, the body 113 may be disposed to extend upward to one side of the second frame 112. Through this, the body 113 can provide an inclined surface disposed above the first frame 111 and the second frame 112. A cavity C may be provided on the first frame 111 and the second frame 112 by the inclined surface of the body 113.

According to an embodiment, the package body 110 may be provided in a structure with a cavity (C), or may be provided in a structure with a flat top surface without the cavity (C).

One of the technical tasks of the embodiment is to provide a light emitting device package that can improve the bonding force between the package body and the light emitting device, a manufacturing method thereof, and a light source device including the same.

In order to solve this technical problem, the light emitting device package 100 according to the embodiment includes a recess in the upper area of the body 113, as shown in FIG. 2, and a resin portion 130 (see FIG. 1). can be placed.

For example, in the embodiment, the body 113 includes a first recess R1 formed in the upper area between the first frame 111 and the third frame 153, the third frame 153, and the third frame 153. It may include a second recess R2 formed in the upper area between the second frames 112.

The first recess (R1) and the second recess (R2) may be provided concavely in a direction from the top to the bottom of the body 113. The first recess R1 may be disposed below the first light emitting device 120A. The second recess R2 may be disposed below the second light emitting device 120B.

The embodiment includes a first resin portion 131 disposed in the first recess (R1) of the body 113 and a second resin portion 132 disposed in the second recess (R2) of the body 113. It may include, and the first and second resin parts 131 and 132 are disposed between the first and second light emitting elements 120A and 120B and the body 113, The bonding force between the light emitting device 120A and the second light emitting device 120B can be increased.

The resin portion 130 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicon-based material.

Accordingly, the resin part 130 can provide a stable fixing force between the first and second light emitting devices 120A and 120B and the package body 110.

According to the implementation, it is possible to provide a light emitting device package that can improve the bonding force between the package body and the light emitting device, a manufacturing method thereof, and a light source device including the same.

The resin portion 130 may be disposed in direct contact with the upper surface of the body 113. Additionally, the resin portion 130 may be disposed in direct contact with the lower surfaces of the first and second light emitting devices 120A and 120B.

Additionally, in the embodiment, when light is emitted from the lower surfaces of the first and second light emitting devices 120A and 120B, the resin portion 130 is connected to the first and second light emitting devices 120A and 120B and the body ( 113), the light extraction efficiency of the light emitting device package 100 can be improved by providing a light diffusion function.

Additionally, in an embodiment, the resin part 130 may reflect light emitted from the first and second light emitting devices 120A and 120B. When the resin part 130 includes a reflective function, the resin part 130 may be made of a material containing TiO ₂ , Silicone, etc., and the resin part 130 may be made of white silicone. It can be configured.

Accordingly, according to the embodiment, a light emitting device package capable of improving brightness, a manufacturing method thereof, and a light source device including the same can be provided.

Also, referring to FIG. 1, the first resin portion 131 and the second resin portion 132 may extend outside the first light emitting device 120A and the second light emitting device 120B, respectively. , In this case, electrical reliability can be improved by preventing electrical short circuits by blocking the lateral expansion of paste, etc. during bonding.

Referring again to FIG. 2, in the embodiment, the depth T1 of the first and second recesses R1 and R2 may be determined by considering the adhesive force of the resin portion 130, and may be determined to ensure stable stability of the body 113. It may be determined that cracks do not occur in the light emitting device package 100 by considering strength or by heat emitted from the first and second light emitting devices 120A and 120B.

The first and second recesses R1 and R2 may provide an appropriate space below the first and second light emitting devices 120A and 120B where an underfill process can be performed. Here, in the underfill process, the first and second light emitting devices 120A and 120B are mounted on the package body 110 and then the resin portion 130 is mounted on the first and second light emitting devices 120A and 120B. 120B) It may be a process of placing it at the bottom.

Alternatively, in the process of mounting the first and second light emitting devices 120A and 120B on the package body 110, the resin portion 130 is connected to the first and second li to mount the first and second light emitting devices 120A and 120B through the resin portion 130. This may be a process of placing the first and second light emitting devices 120A and 120B after being placed in the accesses R1 and R2.

Referring to FIG. 2, the depth T1 and width W4 of the first recess R1 may affect the formation position and fixing force of the resin portion 130. For example, the depth (T1) and width (W4) of the first recess (R1) are determined by the first resin portion (131) disposed between the body (113) and the first light emitting device (120A). It can be determined so that sufficient fixing force can be provided.

For example, the depth T1 of the first recess R1 may be provided as tens of micrometers. The depth T1 of the first recess R1 may be 40 micrometers to 60 micrometers.

Additionally, the width W4 of the first recess R1 may range from tens of micrometers to hundreds of micrometers. Here, the width (W4) of the first recess (R1) is provided in the long axis direction of the first light-emitting device (120A) to secure the fixing force between the first light-emitting device (120A) and the package body 110. It can be.

The depth T1 and width (not shown) of the second recess R2 may also adopt the characteristics of the depth T1 and width W4 of the first recess R1.

In an embodiment, the width W4 of the first recess R1 may be narrower than the gap between the first bonding part 121 and the second bonding part 122 of the first light emitting device 120A. . The width W4 of the first recess R1 may be 5% or more and 80% or less of the major axis length of the first light emitting device 120A. When the width W4 of the first recess R is provided to be 5% or more of the major axis length of the first light emitting device 120A, a stable connection between the first light emitting device 120A and the package body 110 is achieved. The fixing force can be secured, and when provided at 80% or less, the first resin portion 131 is positioned between the first recess R1 and the first and second openings TH1 and TH2 (see FIG. 2). It may be placed in the first and third frames 111 and 153, respectively. Therefore, it is possible to secure a fixing force between the first and third frames 111 and 153 between the first recess R1 and the first and second openings TH1 and TH2 and the first light emitting element 120A. You can.

Through this, according to the embodiment, a light emitting device package capable of improving the bonding force between the package body and the light emitting device, a manufacturing method thereof, and a light source device including the same can be provided.

In addition, according to the embodiment, a light emitting device package capable of improving luminous intensity, a manufacturing method thereof, and a light source device including the same can be provided.

(First to third frames, light emitting element, opening of frame, conductive layer of opening)

In addition, one of the technical challenges of the embodiment is to provide a light emitting device package that can solve problems of electrical and physical reliability in the bonding area between the electrodes of the package body and the electrodes of the light emitting device, a manufacturing method thereof, and a light source device including the same.

In addition, one of the technical tasks of the embodiment is to provide a light emitting device package that provides high output, has excellent reliability, and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

Referring to FIG. 2, the embodiment may include a first frame 111, a second frame 112, and a third frame 153 spaced apart from each other, but is not limited to this and may include four or more frames. there is.

In an embodiment, the first frame 111 and the second frame 112 can stably provide structural strength to the package body 110 and are made of a conductive material and can be electrically connected to the light emitting device. It is not limited to this.

In particular, the embodiment includes a third frame 153 disposed between the first frame 111 and the second frame 112 and spaced apart from the first frame 111 and the second frame 112. may include. The third frame 153 may also stably provide structural strength to the package body 110 and may be made of a conductive material and electrically connected to a light emitting device, but is not limited thereto.

For example, the first frame 111, the second frame 112, and the third frame 153 may include one material selected from the group including Cu, Ag, Au, Pt, etc., or an alloy thereof. there is.

At this time, power may be applied directly to the first frame 111 and the second frame 112 from electrodes of separate circuit boards, and the third frame 153 may not receive power directly. , It may be called an intermediate frame, a connection frame, or a bridge frame, and by connecting the plurality of light-emitting elements in series, high power can be applied and high-output optical output can be realized (6V, 9V, 12V, etc.). , when power is directly applied to the third frame 153, which is the middle frame, a dimming function can also be implemented.

The embodiment may include a first light emitting device 120A disposed on the first resin portion 131 and a second light emitting device 120B disposed on the second resin portion 132. The first and second light emitting devices 120A and 120B may be disposed within the cavity C provided by the package body 110.

*

The first light emitting device 120A may include a first bonding part 121, a second bonding part 122, a light emitting structure 123, and a substrate 124. Additionally, the second light emitting device 120B may include a third bonding part 121b, a fourth bonding part 122b, a light emitting structure 123, and a substrate 124.

As shown in FIG. 2 , the first and second light emitting devices 120A and 120B may include the light emitting structure 123 disposed below the substrate 124 . The first and second bonding parts 121 and 122 and the third and fourth bonding parts 121b and 122b may be disposed between the light emitting structure 123 and the package body 110, respectively.

The light emitting structure 123 may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first and third bonding parts 121 and 121b may be electrically connected to the first conductive semiconductor layer. Additionally, the second and fourth bonding parts 122 and 122b may be electrically connected to the second conductive semiconductor layer.

The light emitting structure 123 may be provided as a compound semiconductor. The light emitting structure 123 may be provided as, for example, a Group 2-6 compound semiconductor or a Group 3-5 compound semiconductor. As an example, the light emitting structure 123 includes at least two elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). It can be.

The light emitting structure 123 may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

The first and second conductivity type semiconductor layers may be implemented with at least one of group 3-5 or group 2-6 compound semiconductors. The first and second conductive semiconductor layers are formed of a semiconductor material having a composition formula of, for example, In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It can be. For example, the first and second conductive semiconductor layers may include at least one selected from the group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. . The first conductive semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductive semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The active layer may be implemented as a compound semiconductor. For example, the active layer may be implemented with at least one of group 3-5 compound semiconductors or group 2-6 compound semiconductors. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers arranged alternately, In _x Al _y Ga _1-xy N (0≤x≤1, 0 It can be arranged as a semiconductor material with a composition formula of ≤y≤1, 0≤x+y≤1). For example, the active layer is selected from the group including InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, InP/GaAs. It can contain at least one.

The first bonding part 121 and the second bonding part 122 may be arranged to be spaced apart from each other on the lower surface of the first light emitting device 120A. Additionally, the third bonding part 121b and the fourth bonding part 122b may be arranged to be spaced apart from each other on the lower surface of the second light emitting device 120B.

The first bonding part 121 may be disposed on the first frame 111. The second bonding part 122 and the third bonding part 121b may be disposed on the third frame 153. The fourth bonding part 122b may be disposed on the second frame 112.

The first to fourth bonding parts (121, 122, 121b, 122b) are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au , Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO. It can be formed in multiple layers.

*One of the technical challenges of the embodiment is to provide a light emitting device package, a manufacturing method thereof, and a light source device including the same that can solve problems of electrical and physical reliability in the bonding area between the electrodes of the package body and the electrodes of the light emitting device.

To solve this problem, the light emitting device package 100 according to the embodiment may include an opening in each frame, and a conductive layer may be disposed in the opening, as shown in FIG. 2.

For example, in the embodiment, the first frame 111 includes a first opening (TH1), the third frame 153 includes a second opening (TH2) and a third opening (TH3), The second frame 112 may include a fourth opening TH4, and first to fourth conductive layers 321, 322, 323, and 324 are formed in the first to fourth openings TH1, TH2, TH3, and TH4, respectively. This can be placed.

Through this, according to the embodiment, a light emitting device package that has excellent electrical and physical reliability in the bonding area between the electrodes of the package body and the electrodes of the light emitting device, a manufacturing method thereof, and a light source device including the same can be provided.

For example, according to the light emitting device package and the light emitting device manufacturing method according to the embodiment, re-melting phenomenon is prevented from occurring in the bonding area of the light emitting device package during the process of rebonding the light emitting device package to the substrate, etc. There are advantages to doing this.

Specifically, when a conventional light emitting device package is mounted on a submount or circuit board, high temperature processes such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon may occur in the bonding area between the lead frame provided in the light-emitting device package and the electrode of the light-emitting device, thereby weakening the stability of the electrical connection and physical bonding, and also the light-emitting device. The position of may change, and the optical and electrical characteristics and reliability of the light emitting device package may deteriorate.

Accordingly, according to the light emitting device package and the method of manufacturing the light emitting device package according to the embodiment, the first frame 111 includes a first opening (TH1), the third frame 153 includes a second opening (TH2), Includes a third opening (TH3), and the second frame 112 may include a fourth opening (TH4), and the first to fourth openings (TH1, TH2, TH3, and TH4) each have a first opening (TH3). To fourth conductive layers (321, 322, 323, 324) may be disposed, and the first to fourth bonding parts (121, 122, 121b, 122b) of the light emitting device according to the embodiment may have first to fourth openings (TH1, TH2, TH3, Driving power can be provided through the first to fourth conductive layers 321, 322, 323, and 324 disposed on TH4).

Accordingly, the first and second light emitting devices (120A, 120B) not only contact the first to third frames (111, 112, 153) of the package body 110, but also contact the first to fourth openings (TH1, The re-melting problem can be prevented by bonding in contact with the first to fourth conductive layers 321, 322, 323, and 324 of TH2, TH3, and TH4). Additionally, in an embodiment, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of a general bonding material.

In addition, re-melting is performed by ensuring that the adhesive material between the first and second light emitting devices (120A, 120B) and the package body 110 and the adhesive material between the light emitting device package and the circuit board are different from each other. You can also prevent problems.

Therefore, even when the light emitting device package 100 according to the embodiment is bonded to a main board, etc. through a reflow process, a re-melting phenomenon does not occur, and thus the electrical connection and physical bonding force are not deteriorated. There is an advantage to not having it.

In addition, according to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, there is no need for the package body 110 to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored due to exposure to high temperatures.

In addition, the embodiment includes a first resin portion 131 disposed in the first recess (R1) of the body 113 and a second resin portion 132 disposed in the second recess (R2) of the body 113. ) may include, and the first and second resin parts 131 and 132 are disposed between the first and second light emitting elements 120A and 120B and the body 113, The bonding force between the first light emitting device 120A and the second light emitting device 120B can be increased.

Accordingly, in the embodiment, the first and second light emitting elements (120A, 120B) not only contact the first to third frames (111, 112, 153) of the package body 110, but also the first to fourth openings of each frame ( In addition to being in contact with and bonding to the first to fourth conductive layers (321, 322, 323, 324) of TH1, TH2, TH3, and TH4), the first and second resin parts (131, 132) are connected to the first and second light emitting devices (120A, There is a complex technical effect that can provide a stable fixing force between 120B) and the package body 110.

Referring to FIG. 2 , the first opening TH1 may be provided in the first frame 111 . The first opening TH1 may be provided through the first frame 111 . The first opening TH1 may be provided through the upper and lower surfaces of the first frame 111 in a first direction.

The first opening TH1 may be disposed below the first bonding part 121 of the first light emitting device 120A. The first opening TH1 may be provided to overlap the first bonding portion 121 of the first light emitting device 120A in a first direction from the top to the bottom of the first frame 111.

The second and third openings TH2 and TH3 may be provided in the third frame 153. The second and third openings TH2 and TH3 may be provided through the third frame 153. The second and third openings TH2 and TH3 may be provided through the upper and lower surfaces of the third frame 112 in the first direction.

The second opening TH2 may be disposed below the second bonding part 122 of the first light emitting device 120A. The third opening TH3 may be disposed below the third bonding part 121a of the second light emitting device 120B.

The fourth opening TH4 may be provided in the second frame 112 . The fourth opening TH4 may be provided through the second frame 112 . The fourth opening TH4 may be provided through the upper and lower surfaces of the second frame 112 in the first direction.

The fourth opening TH4 may be disposed below the fourth bonding part 122b of the second light emitting device 120B. The fourth opening TH4 may be provided to overlap the fourth bonding portion 122b of the second light emitting device 120B in a first direction from the top to the bottom of the second frame 112.

*

The first opening TH1 and the second opening TH2 may be arranged to be spaced apart from each other. The first opening TH1 and the second opening TH2 may be arranged to be spaced apart from each other under the lower surface of the first light emitting device 120A.

According to an embodiment, the width W1 of the upper area of the first opening TH1 may be smaller than or equal to the width of the first bonding part 121. Additionally, the width of the upper area of the second opening TH2 may be smaller than or equal to the width of the second bonding portion 122.

Accordingly, the first bonding portion 121 of the first light emitting device 120A not only contacts the first conductive layer 321 disposed in the first opening TH1 but also contacts the first frame 111. By doing so, it can be attached more firmly.

Likewise, the second bonding portion 122 of the first light emitting device 120A not only contacts the second conductive layer 322 disposed in the second opening TH2 but also contacts the third frame 153. It can be attached more firmly.

Additionally, the width W1 of the upper region of the first opening TH1 may range from tens of micrometers to hundreds of micrometers. Additionally, the width W2 of the lower region of the first opening TH1 may be tens to hundreds of micrometers larger than the width W1 of the upper region of the first opening TH1. Through this, electrical reliability with the circuit board mounted below can be improved, and when forming the first conductive layer 321 by injecting it from the bottom, not only is the process of the conductive layer smooth, but the conductive layer is formed evenly. Reliability can be improved.

Additionally, the width of the upper area of the second opening TH2 may range from tens of micrometers to hundreds of micrometers. Additionally, the width of the lower region of the second opening TH2 may be tens to hundreds of micrometers larger than the width of the upper region of the second opening TH2.

Additionally, the width W2 of the lower area of the first opening TH1 may be provided to be wider than the width W1 of the upper area of the first opening TH1. The first opening TH1 may be provided with a constant width and a predetermined depth in the upper region and may be provided in an inclined shape toward the lower region.

Additionally, the width of the lower area of the second opening TH2 may be wider than the width of the upper area of the second opening TH2. The second opening TH2 may be provided with a constant width and a predetermined depth in the upper region and may be provided in an inclined shape toward the lower region.

For example, the first opening TH1 may have an inclined shape whose width gradually decreases from the lower area to the upper area. Additionally, the second opening TH2 may have an inclined shape whose width gradually decreases from the lower area to the upper area.

Additionally, according to an embodiment, both lower areas of the first and second openings TH1 and TH2 may include inclined surfaces (not shown). However, it is not limited to this, and the inclined surface between the upper and lower areas of the first and second openings TH1 and TH2 may have a plurality of inclined surfaces with different inclinations, and the inclined surfaces may be arranged to have a curvature. .

In addition, the width W3 between the first opening TH1 and the second opening TH2 in the lower surface areas of the first frame 111 and the third frame 153 may be hundreds of micrometers. . The width W3 between the first opening TH1 and the second opening TH2 in the lower surface areas of the first frame 111 and the third frame 153 is, for example, 100 micrometers to 150 micrometers. It can be provided as .

The width W3 between the first opening TH1 and the second opening TH2 in the lower surface areas of the first frame 111 and the third frame 153 is the light emitting device package according to the embodiment ( When 100) is mounted on a circuit board, sub-mount, etc. in the future, it may be selected to be provided at a certain distance or more to prevent electrical shorts between pads.

Referring to FIG. 2, in the embodiment, the depth T2 of the first to fourth openings TH1, TH2, TH3, and TH4 corresponds to the thickness of the first to third frames 111, 112, and 153. It can be provided and can be provided at a thickness that can maintain stable strength of the frame.

In addition, the depth T2 of the first to fourth openings TH1, TH2, TH3, and TH4 may be provided to correspond to the thickness of the body 113, and may be provided at a thickness that can maintain stable strength of the body. You can.

For example, the depth T2 of the first opening TH1 may be hundreds of micrometers. The depth T2 of the first opening TH1 may be 180 micrometers to 500 micrometers. For example, the depth T2 of the first opening TH1 may be 500 micrometers.

As an example, the thickness of (T2-T1) may be selected to be at least 100 micrometers or more. This takes into account the thickness of the injection process that can provide crack freeness of the body 113.

According to an embodiment, the ratio (T2/T1) of the T1 thickness to the T2 thickness may be provided as 2 to 10. As an example, if the thickness of T2 is provided as 200 micrometers, the thickness of T1 may be provided as between 20 micrometers and 100 micrometers. The ratio of the T1 thickness to the T2 thickness (T2/T1) must be 2 or more to ensure mechanical strength to prevent cracks or disconnections in the body 113. In addition, the ratio of the T1 thickness to the T2 thickness (T2/T1) must be 10 or less to sufficiently dispose the resin portion 130 in the recess, and thus the first and second light emitting devices 120A , 120B) and the light emitting device package 110 can be improved.

Next, in the embodiment, first to fourth conductive layers 321, 322, 323, and 324 are disposed in the first to fourth openings TH1, TH2, TH3, and TH4, respectively, and the first to fourth openings TH1, TH2, TH3 ,TH4) may each overlap the first to fourth bonding parts 121, 122, 121b, and 122b in the vertical direction.

Additionally, the first to fourth conductive layers 321, 322, 323, and 324 may overlap the first to fourth bonding parts 121, 122, 121b, and 122b, respectively, in the vertical direction.

The width of the first to fourth conductive layers 321, 322, 323, and 324 may be smaller than the width of the first to fourth bonding parts 121, 122, 121b, and 122b.

The first to fourth conductive layers 321, 322, 323, and 324 may include one material selected from the group including Ag, Au, Pt, etc., or an alloy thereof. However, the material is not limited to this, and materials capable of securing a conductive function may be used as the first to fourth conductive layers 321, 322, 323, and 324.

For example, the first to fourth conductive layers 321, 322, 323, and 324 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, etc., and may be composed of multiple layers made of different materials or a single layer or a single layer made of alloy.

(Fifth resin part below/around the light emitting element)

As shown in FIG. 2, the light-emitting device package according to the embodiment includes a fifth resin part 135 below or around the first and second light-emitting devices 120A and 120B to form the first and second light-emitting devices (120A, 120B). 120A, 120B) and the first to third frames 111, 112, and 153 can be improved, and the fifth resin part 135 is connected to the first and second light emitting devices 120A and 120B. When the light emitted from is reflected, the light extraction efficiency of the light emitting device package 100 can be improved.

For example, the first frame 111 includes a third upper recess (R3) provided on its upper surface, and the second frame 112 includes a fourth upper recess (R4) provided on its upper surface. The third frame 153 may include third and fourth upper recesses R3 and R4 provided on its upper surface.

The third upper recess R3 may be provided concavely in a direction from the top to the bottom of the first frame 111. The third upper recess (R3) may be arranged to be spaced apart from the first opening (TH1) in an outer direction of the package body 110.

Additionally, according to an embodiment, a side surface of the third upper recess R3 may have an inclined surface or a curvature. Additionally, the third upper recess R3 may have a spherical shape, and its side surface may have a circular shape.

The fourth upper recess R4 may be provided on the upper surface of the third frame 153. The fourth upper recess R4 may be concave in a direction from the top to the bottom of the third frame 153. Additionally, according to an embodiment, a side surface of the fourth upper recess R4 may have an inclined surface or a curvature. Additionally, the fourth upper recess R4 may have a spherical shape, and its side surface may have a circular shape.

Additionally, the light emitting device package 100 according to the embodiment may include a fifth resin portion 135 in the third and fourth upper recesses R3 and R4, as shown in FIG. 2 . For example, the fifth resin portion 135 includes at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicon-based material. can do.

The fifth resin portion 135 may be disposed between the first to third frames 111, 112, and 153 and the first and second light emitting devices 120A and 120B, and accordingly, the third The fifth resin part 135 filled in the upper recess (R3) and the fourth upper recess (R4) can effectively seal around the first to fourth bonding parts (121, 122, 121b, and 122b). There will be.

In addition, the third upper recess (R3) and the fourth upper recess (R4) are configured such that the fifth resin portion 135 may be provided below the first and second light emitting elements (120A, 120B). Sufficient space can be provided. The third upper recess R3 and the fourth upper recess R4 may provide an appropriate space below the first light emitting device 120A where an underfill process can be performed.

Accordingly, the fifth resin portion 135 filled in the third upper recess (R3) and the fourth upper recess (R4) is connected to the first to fourth bonding portions 121, 122, 121b, and 122b. It is possible to effectively seal the surroundings.

In addition, in the embodiment, the first and second light emitting elements 120A and 120A are transmitted through the first and second resin parts 131 and 132 disposed in the first and second recesses R1 and R2 of the body 113, respectively. After fixing 120B and the package body 110, the fifth resin part 135 is placed in the third and fourth upper recesses R3 and R4 to form the first to fourth bonding parts 121 and 122. , 121b,122b) It has the technical effect of sealing the surroundings.

Additionally, in the embodiment, when the first and second recesses (R3, R4) are disposed to surround partial areas of the first to fourth bonding parts (121, 122, 121b, and 122b), the first to fourth recesses (R3, R4) 4 By blocking the conductive layers 121, 122, 123, and 124 from extending to the sides of the first and second light emitting devices 120A and 120B, the electrical short circuit problem in the active layer can be more effectively improved.

Additionally, the fifth resin part 135 may be disposed under the first and second light emitting devices 120A and 120B to perform a sealing function. Additionally, the fifth resin portion 135 may improve adhesion between the first and second light emitting devices 120A and 120B and the first to third frames 111, 112, and 153.

In addition, the fifth resin part 135 is made of white silicon or includes a material with reflective properties such as TiO ₂ to reflect the light emitted from the first and second light emitting devices 120A and 120B. In this case, the fifth resin part 135 reflects the light provided from the first and second light emitting devices 120A and 120B toward the top of the package body 110 to extract light from the light emitting device package 100. Efficiency can be improved.

In addition, when the fifth resin portion 135 is arranged to fill the third and fourth upper recesses (R3, R4), the third and fourth upper recesses (R3, R4) as described above Since is disposed to surround a portion of the first and second light emitting devices 120A and 120B, reflectivity may be increased in the area where the third and fourth upper recesses R3 and R4 are disposed. Accordingly, light extraction efficiency of the light emitting device package 100 can be improved.

<Molding part>

Next, the light emitting device package 100 according to the embodiment may include a molding part 140, as shown in FIG. 2. For reference, in FIG. 1 , the molding part 140 is not shown so that the arrangement relationship between the first to third frames 111, 112, and 153 and the body 113 can be clearly shown.

The molding part 140 may be provided on the first and second light emitting devices 120A and 120B. The molding part 140 may be disposed on the first to third frames 111, 112, and 151. The molding part 140 may be placed in the cavity C provided by the package body 110.

The molding part 140 may include an insulating material. Additionally, the molding part 140 may include a wavelength conversion means that receives light emitted from the first and second light emitting devices 120A and 120B and provides wavelength-converted light. For example, the molding part 140 may be made of at least one selected from the group including phosphors, quantum dots, etc.

Next, FIG. 3 is a conceptual diagram showing the light emitting device package shown in FIG. 1 disposed on the circuit board 410.

The circuit board 410 may include a first pad 411, a second pad 412, and a substrate 415. A power supply circuit that controls the operation of the first and second light emitting devices 120A and 120B may be provided on the substrate 415. For example, the circuit board 410 may include a first wire 413 and a second wire 414, and the first wire 413 may be electrically connected to the first pad 411. and the second wiring 414 may be electrically connected to the second pad 412.

The first pad 411 and the second pad 412 may include a conductive material. For example, the first pad 411 and the second pad 412 are selected from a group including Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, and Al. It may include at least one selected material or alloy thereof. The first pad 411 and the second pad 412 may be provided as a single layer or multiple layers.

As shown in FIG. 3 , the light emitting device package 100 of the embodiment may be placed on the circuit board 410 . The first pad 411 and the first bonding part 121 may be electrically connected, and the second pad 412 and the fourth bonding part 122 may be electrically connected.

Referring to FIGS. 1 and 3, the first light-emitting device 120A and the second light-emitting device 120B may be electrically connected in series, and through this, the high-output serial method of the flip chip (6V, 9V, 12V, etc.), and in addition, the resin part functions as an adhesive, and a light emitting device package with excellent reliability can be provided while providing high output by using a conductive layer disposed in the opening.

For example, the first frame 111 and the second frame 112 may receive power directly from electrodes of separate circuit boards, and the third frame 153 may not receive power directly. In addition, by connecting the plurality of light-emitting devices in series, high power can be applied and high-power optical output can be realized (6V, 9V, 12V, etc.). In addition, when power is directly applied to the third frame 153, which is the middle frame, a dimming function can also be implemented.

Meanwhile, the light emitting device package described above may include, for example, a flip chip light emitting device. For example, the flip-chip light-emitting device may be provided as a transmissive flip-chip light-emitting device that emits light in six-sided directions, or may be provided as a reflective flip-chip light-emitting device that emits light in five-sided directions.

The reflective flip chip light emitting device that emits light in the five-sided direction may have a structure in which a reflective layer is disposed in a direction close to the package body 110. For example, the reflective flip chip light emitting device may have an insulating reflective layer (e.g., Distributed Bragg Reflector, Omni Directional Reflector, etc.) and/or a conductive reflective layer (e.g., Ag, etc.) between the first and second bonding parts and the light emitting structure. Al, Ni, Au, etc.).

In addition, the flip chip light emitting device that emits light in the six-sided direction has a first bonding portion electrically connected to the first conductivity type semiconductor layer and a second bonding portion electrically connected to the second conductivity type semiconductor layer, It can be provided as a general horizontal light emitting device that emits light between the first bonding part and the second bonding part.

In addition, the flip chip light emitting device that emits light in the six-sided direction is a transmission type flip chip light emitting device that includes both a reflective area where a reflective layer is disposed between the first and second bonding parts and a transmission area where light is emitted. can be provided.

Here, a transmissive flip chip light emitting device refers to a device that emits light from six sides: the top surface, four sides, and the bottom surface. Additionally, a reflective flip chip light emitting device refers to a device that emits light from the top surface and 5 sides of the 4 sides.

Meanwhile, the light emitting device package 100 according to the embodiment described above may be supplied mounted on a sub-mount or a circuit board.

However, when conventional light emitting device packages are mounted on submounts or circuit boards, high temperature processes such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in the bonding area between the lead frame provided in the light emitting device package and the light emitting device, which may weaken the stability of the electrical connection and physical bond.

However, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first to bonding portions of the light emitting device according to the embodiment may be provided with driving power through a conductive layer disposed in the opening. Additionally, the melting point of the conductive layer disposed in the opening may be selected to have a higher melting point than that of a general bonding material.

Therefore, even when the light emitting device package 100 according to the embodiment is bonded to a main board, etc. through a reflow process, a re-melting phenomenon does not occur, so the electrical connection and physical bonding force are not deteriorated. There is an advantage to not having it.

In addition, according to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, there is no need for the package body 110 to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored due to exposure to high temperatures.

<Second Embodiment>

Figure 4 is a plan view of the light emitting device package 102 according to the second embodiment.

One of the technical tasks of the embodiment is to provide a light emitting device package that provides high output while being highly reliable and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

The second embodiment can adopt the technical features of the first embodiment. For example, the second embodiment includes a package body 110 and a plurality of light-emitting devices disposed on the package body 110 to implement high-output light output. For example, the embodiment may include a first light-emitting device 120A and a second light-emitting device 120B, but is not limited thereto and can implement high-output light output by using three or more light-emitting devices.

The package body 110 may include a plurality of frames. For example, the package body 110 may include a first frame 111A, a second frame 112A, and a third frame 153 that are spaced apart from each other.

At this time, power may be applied directly to the first frame 111A and the second frame 112A from electrodes of separate circuit boards, and the third frame 153 may not receive power directly. , By connecting the plurality of light-emitting devices in series, high power can be applied, thereby realizing high-output optical output, and when power is applied directly to the third frame 153, which is the middle frame, a dimming function can also be implemented. You can.

In addition, the package body 110 may include a body 113 that functions as a support portion, and includes a resin portion 130 in an upper region overlapping with the first light emitting device 120A and the second light emitting device 120B. can do. For example, the embodiment includes a resin part 130, for example, a first resin part 131, a second resin part ( 132), the bonding strength between the package body and the light emitting device can be improved.

Additionally, the first resin portion 131 and the second resin portion 132 may extend to the outside of the first light emitting device 120A and the second light emitting device 120B, respectively, and in this case, during bonding. Electrical reliability can be improved by preventing electrical short circuits by blocking lateral expansion of paste, etc.

Additionally, the package body 110 may include a fifth resin portion 135 around the first and second light emitting devices 120A and 120B. For example, the fifth resin part 135 may be disposed below and/or on the side of the first and second light emitting devices 120A and 120B to perform a sealing function. Additionally, the fifth resin portion 135 may improve adhesion between the first and second light emitting devices 120A and 120B and the first to third frames 111A, 112A and 153.

*As shown in FIG. 4, in the second embodiment, the first frame 111A and the second frame 112A may be smaller than the third frame 153. Through this, according to the embodiment, it is possible to provide a light emitting device package that provides high output, has excellent reliability, and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

For example, the first frame 111A and the second frame 112A may be arranged to overlap top and bottom, and the third frame 153 may be positioned in the longitudinal direction of the first and second light emitting devices 120B. The first light-emitting device 120A is disposed on the first frame 111A and the third frame 153 so as to be arranged perpendicularly, and the second light-emitting device 120B is placed on the second frame 112A and By placing it on the third frame 153, it is possible to provide a light emitting device package that provides high output, has excellent reliability, and has a compact semiconductor package size.

The first light-emitting device (120A) and the second light-emitting device (120B) are arranged to overlap top and bottom, thereby making the area occupied by the light-emitting devices (120A, 120B) and the light-emitting device package body 110 very compact while providing high-output power. A light emitting device package can be implemented. Accordingly, according to the embodiment, it is possible to provide a light emitting device package that provides high output, has excellent reliability, and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

In addition, according to an embodiment, a light emitting device package that includes a first resin portion 131 and a second resin portion 132 and can improve the bonding force between the package body and the light emitting device, a manufacturing method thereof, and a light source device including the same can be provided.

In addition, according to the embodiment, a light emitting device package that has excellent electrical and physical reliability in the bonding area between the electrodes of the package body and the electrodes of the light emitting device, a manufacturing method thereof, and a light source device including the same can be provided.

In addition, according to the embodiment, a light emitting device package capable of improving luminous intensity by a resin part, a manufacturing method thereof, and a light source device including the same can be provided.

In addition, according to the embodiment, there is a complex effect of providing a light emitting device package that can reduce manufacturing costs and improve manufacturing yield by improving process efficiency and changing the structure, a method of manufacturing the same, and a light source device including the same.

<Third Embodiment>

Figure 5 is a plan view of the light emitting device package 103 according to the third embodiment.

One of the technical tasks of the embodiment is to provide a light emitting device package that provides high output while being highly reliable and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

The third embodiment can adopt the technical features of the first and second embodiments.

For example, the third embodiment can implement high-output light output by including the package body 110 and a plurality of light-emitting devices disposed on the package body 110. For example, the embodiment may include a first light-emitting device (120A), a second light-emitting device (120B), and a third light-emitting device (120C), but is not limited thereto and includes four or more light-emitting devices to provide high-output light. You can also implement output.

The package body 110 may include a plurality of frames. For example, the package body 110 may include a first frame 111A, a second frame 112A, a third frame 153, and a fourth frame 154 that are spaced apart from each other, but is not limited thereto. It may also contain five or more frames.

At this time, power may be applied directly to the first frame (111A) and the second frame (112A) from electrodes of separate circuit boards, and the third frame (153) and fourth frame (154) may be directly supplied with power. Power may not be applied, and by connecting the plurality of light-emitting devices in series, high power can be applied to realize high-output optical output, and the third frame 153 or fourth frame 154, which is the middle frame, If power is applied directly to the device, a dimming function can also be implemented.

Additionally, the package body 110 may include a body 113 that functions as a support unit. Accordingly, the first frame 111A, the second frame 112A, the third frame 153, and the fourth frame 154 in the lower center portion and the right portion can be supported by the body 113. . The body 113 also has first to third resin parts 131, 132, and 133 in the upper region overlapping with the first light-emitting device 120A, the second light-emitting device 120B, and the third light-emitting device 120C, respectively. ), which can improve the bonding strength between the package body and the light emitting device.

In addition, the first to third resin parts 131, 132, and 133 may extend to the outside of the first light-emitting device 120A, the second light-emitting device 120B, and the third light-emitting device 120C, respectively, and in this case, bonding is performed. Electrical reliability can be improved by preventing electrical short circuits by blocking the lateral expansion of paste, etc.

Additionally, the package body 110 may include a fifth resin portion 135 around the first, second, and third light emitting devices 120A, 120B, and 120C. For example, the fifth resin part 135 may be disposed below and/or on the side of the first, second, and third light emitting devices 120A, 120B, and 120C to perform a sealing function. In addition, the fifth resin part 135 can improve adhesion between the first, second, and third light emitting devices (120A, 120B, and 120C) and the first to fourth frames (111A, 112A, 153, and 154). there is.

In the third embodiment, a fourth frame 154 is disposed between the third frame 153 and the second frame 112A and spaced apart from the third frame 153 and the second frame 112A. More may be included.

The first light-emitting device 120A may be disposed on the first frame 111A and the third frame 153, and the second light-emitting device 120B may be disposed on the second frame 112A and the fourth frame 154. ), and the third light emitting device 120C may be disposed on the third frame 153 and the fourth frame 154.

As shown in FIG. 5, in the third embodiment, the first frame 111A and the second frame 112A may be smaller in size than the third frame 153 and the fourth frame 154. Through this, according to the embodiment, it is possible to provide a light emitting device package that provides high output, has excellent reliability, and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

For example, the first frame 111A and the second frame 112A may be placed adjacent to each other laterally, and the third frame 153 may be adjacent to the first frame 111A and the second frame 112A. ) and can be arranged to overlap between the top and bottom.

In addition, the fourth frame 154 is arranged perpendicular to the longitudinal direction of the second and third light emitting devices 120B and 120C, thereby providing high output and excellent reliability, and a light emitting device package with a compact semiconductor package size. can be provided.

The second light-emitting device 120B and the third light-emitting device 120C are arranged to overlap top and bottom, so that the area occupied by the light-emitting devices 120A, 120B, and 120C and the light-emitting device package body 110 is very compact. However, it is possible to implement a high-output light emitting device package. Accordingly, according to the embodiment, it is possible to provide a light emitting device package that provides high output, has excellent reliability, and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

In addition, according to the embodiment, a light emitting device package that includes a first resin portion 131, a second resin portion 132, and a third resin portion 133, respectively, to improve the bonding force between the package body and the light emitting device; A manufacturing method thereof and a light source device including the same can be provided.

In addition, according to the embodiment, a light emitting device package that has excellent electrical and physical reliability in the bonding area between the electrodes of the package body and the electrodes of the light emitting device, a manufacturing method thereof, and a light source device including the same can be provided.

In addition, according to the embodiment, a light emitting device package capable of improving luminous intensity by a resin part, a manufacturing method thereof, and a light source device including the same can be provided.

In addition, according to the embodiment, there is a complex effect of providing a light emitting device package that can reduce manufacturing costs and improve manufacturing yield by improving process efficiency and changing the structure, a method of manufacturing the same, and a light source device including the same.

<Example 4>

Figure 6 is a plan view of the light emitting device package 104 according to the fourth embodiment.

One of the technical tasks of the embodiment is to provide a light emitting device package that provides high output while being highly reliable and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

The fourth embodiment can adopt the technical features of the first to third embodiments.

For example, the fourth embodiment can implement high-output light output by including the package body 110 and a plurality of light-emitting devices disposed on the package body 110. For example, the embodiment may include a first light-emitting device (120A), a second light-emitting device (120B), and a third light-emitting device (120C), but is not limited thereto and includes four or more light-emitting devices to provide high-output light. You can also implement output.

The package body 110 may include a plurality of frames. For example, the package body 110 may include a first frame 111A, a second frame 112A, a third frame 153, and a fourth frame 154 that are spaced apart from each other, but is not limited thereto. It may also contain five or more frames.

At this time, power may be applied directly to the first frame (111A) and the second frame (112A) from electrodes of separate circuit boards, and the third frame (153) and fourth frame (154) may be directly supplied with power. Power may not be applied, and by connecting the plurality of light-emitting devices in series, high power can be applied to realize high-output optical output, and the third frame 153 or fourth frame 154, which is the middle frame, If power is applied directly to the device, a dimming function can also be implemented.

Additionally, the package body 110 may include a fifth resin portion 135 around the first, second, and third light emitting devices 120A, 120B, and 120C. For example, the fifth resin part 135 may be disposed below and/or on the side of the first, second, and third light emitting devices 120A, 120B, and 120C to perform a sealing function. In addition, the fifth resin part 135 can improve adhesion between the first, second, and third light emitting devices (120A, 120B, and 120C) and the first to fourth frames (111A, 112A, 153, and 154). there is.

Additionally, the package body 110 may include a body 113 that functions as a support portion, and an upper region that overlaps the first light-emitting device 120A, the second light-emitting device 120B, and the third light-emitting device 120C. By including the first to third resin parts 131, 132, and 133, respectively, the bonding strength between the package body and the light emitting device can be improved.

Additionally, the first to third resin parts 131, 132, and 133 may extend to the outside of the first light-emitting device 120A, the second light-emitting device 120B, and the third light-emitting device 120C, respectively. In this case, Electrical reliability can be improved by preventing electrical short circuits by blocking the lateral expansion of paste, etc. during bonding.

In the third embodiment, a fourth frame 154 is disposed between the third frame 153 and the second frame 112A and spaced apart from the third frame 153 and the second frame 112A. More may be included.

The first light-emitting device 120A may be disposed on the first frame 111A and the third frame 153, and the second light-emitting device 120B may be disposed on the second frame 112A and the fourth frame 154. ), and the third light emitting device 120C may be disposed on the third frame 153 and the fourth frame 154.

As shown in FIG. 5, in the third embodiment, the first frame 111A and the second frame 112A may be smaller in size than the third frame 153 and the fourth frame 154. Through this, according to the embodiment, it is possible to provide a light emitting device package that provides high output, has excellent reliability, and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

For example, the first frame 111A and the second frame 112A may be arranged to be spaced apart, and the third frame 153 and the fourth frame 154 may be arranged between them.

For example, the third frame 153 is disposed in a direction perpendicular to the longitudinal direction of the first light emitting device 120A, and the fourth frame 154 is partially overlapped with the third frame 153 above and below. It is disposed in a direction perpendicular to the longitudinal direction of the first light emitting device 120A and may overlap top and bottom with the second frame 112A.

Accordingly, the arrangement of the light emitting elements and the frame become more dense, making it possible to provide a light emitting element package that provides high output, has excellent reliability, and has a compact semiconductor package size.

In particular, the first, second, and third light emitting devices (120A, 120B, 120C) are arranged to overlap laterally, so that the area occupied by the light emitting devices (120A, 120B, 120C) and the light emitting device package body 110 is greatly reduced. It is possible to implement a compact yet high-output light emitting device package. Accordingly, according to the embodiment, it is possible to provide a light emitting device package that provides high output, has excellent reliability, and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

In addition, according to the embodiment, a light emitting device package that has excellent electrical and physical reliability in the bonding area between the electrodes of the package body and the electrodes of the light emitting device, a manufacturing method thereof, and a light source device including the same can be provided.

In addition, according to the embodiment, a light emitting device package capable of improving luminous intensity by a resin part, a manufacturing method thereof, and a light source device including the same can be provided.

In addition, according to the embodiment, a light emitting device package that includes a first resin portion 131, a second resin portion 132, and a third resin portion 133, respectively, to improve the bonding force between the package body and the light emitting device; A manufacturing method thereof and a light source device including the same can be provided.

In addition, according to the embodiment, there is a complex effect of providing a light emitting device package that can reduce manufacturing costs and improve manufacturing yield by improving process efficiency and changing the structure, a method of manufacturing the same, and a light source device including the same.

<Example of flip chip light emitting device applied to light emitting device package>

Then, an example of a flip chip light emitting device applied to a light emitting device package according to an embodiment will be described below.

First, a light emitting device according to an embodiment will be described with reference to FIGS. 7 and 8.

FIG. 7 is a plan view showing a light emitting device according to an embodiment, and FIG. 8 is a cross-sectional view taken along line A-A of the light emitting device shown in FIG. 7.

Meanwhile, to aid understanding, in FIG. 7 , the first sub-electrode is disposed below the first bonding part 1171 and the second bonding part 1172, but is electrically connected to the first bonding part 1171. The second sub-electrode 1142 electrically connected to 1141 and the second bonding portion 1172 is shown so as to be visible.

The light emitting device 1100 according to the embodiment may include a semiconductor structure 1110 disposed on a substrate 1105.

The substrate 1105 may be selected from the group including sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 1105 may be provided as a Patterned Sapphire Substrate (PSS) with a concavo-convex pattern formed on its upper surface.

The semiconductor structure 1110 may include a first conductive semiconductor layer 1111, an active layer 1112, and a second conductive semiconductor layer 1113. The active layer 1112 may be disposed between the first conductive semiconductor layer 1111 and the second conductive semiconductor layer 1113. For example, the active layer 1112 may be disposed on the first conductive semiconductor layer 1111, and the second conductive semiconductor layer 1113 may be disposed on the active layer 1112.

According to an embodiment, the first conductive semiconductor layer 1111 may be provided as an n-type semiconductor layer, and the second conductive semiconductor layer 1113 may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductive semiconductor layer 1111 may be provided as a p-type semiconductor layer, and the second conductive semiconductor layer 1113 may be provided as an n-type semiconductor layer.

Hereinafter, for convenience of explanation, the description will be made based on the case where the first conductive semiconductor layer 1111 is provided as an n-type semiconductor layer and the second conductive semiconductor layer 1113 is provided as a p-type semiconductor layer. .

The light emitting device 1100 according to the embodiment may include an ohmic contact layer 1130, as shown in FIG. 8. The ohmic contact layer 1130 can increase light output by improving current diffusion. The arrangement position and shape of the ohmic contact layer 1130 will be discussed further while explaining the light emitting device manufacturing method according to the embodiment.

For example, the ohmic contact layer 1130 may include at least one selected from the group including metal, metal oxide, and metal nitride. The ohmic contact layer 1130 may include a light-transmitting material.

The ohmic contact layer 1130 is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), IGZO ( indium gallium zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni It may include at least one selected from the group including /IrOx/Au/ITO, Pt, Ni, Au, Rh, and Pd.

The light emitting device 1100 according to the embodiment may include a reflective layer 1160, as shown in FIGS. 7 and 8 . The reflective layer 1160 may include a first reflective layer 1161, a second reflective layer 1162, and a third reflective layer 1163. The reflective layer 1160 may be disposed on the ohmic contact layer 1130.

The second reflective layer 1162 may include a first opening h1 exposing the ohmic contact layer 1130. The second reflective layer 1162 may include a plurality of first openings h1 disposed on the ohmic contact layer 1130.

The first reflective layer 1161 may include a plurality of second openings h2 exposing the upper surface of the first conductive semiconductor layer 1111.

The third reflective layer 1163 may be disposed between the first reflective layer 1161 and the second reflective layer 1162. For example, the third reflective layer 1163 may be connected to the first reflective layer 1161. Additionally, the third reflective layer 1163 may be connected to the second reflective layer 1162. The third reflective layer 1163 may be disposed in direct physical contact with the first reflective layer 1161 and the second reflective layer 1162.

For example, the width W5 of the third reflective layer 1163 may be smaller than the width W4 of the first recess R described with reference to FIG. 2 .

Accordingly, light emitted between the first reflective layer 1161 and the third reflective layer 1163 may be incident on the first resin part 131 disposed in the first recess (R) area. Light emitted toward the bottom of the light emitting device can be diffused by the first resin part 131, and light extraction efficiency can be improved.

Additionally, light emitted between the second reflective layer 1162 and the third reflective layer 1163 may be incident on the first resin portion 131 disposed in the first recess R1 region. Light emitted toward the bottom of the light emitting device can be diffused by the first resin part 131, and light extraction efficiency can be improved.

The reflective layer 1160 according to the embodiment may be in contact with the second conductive semiconductor layer 1113 through a plurality of contact holes provided in the ohmic contact layer 1130. The reflective layer 1160 may be physically contacted with the upper surface of the second conductive semiconductor layer 1113 through a plurality of contact holes provided in the ohmic contact layer 1130.

The shape of the ohmic contact layer 1130 and the shape of the reflective layer 1160 according to the embodiment will be further examined while explaining the light emitting device manufacturing method according to the embodiment.

The reflective layer 1160 may be provided as an insulating reflective layer. For example, the reflective layer 1160 may be provided as a Distributed Bragg Reflector (DBR) layer. Additionally, the reflective layer 1160 may be provided as an Omni Directional Reflector (ODR) layer. Additionally, the reflective layer 1160 may be provided by stacking a DBR layer and an ODR layer.

The light emitting device 1100 according to the embodiment may include a first sub-electrode 1141 and a second sub-electrode 1142, as shown in FIGS. 7 and 8.

The first sub-electrode 1141 may be electrically connected to the first conductive semiconductor layer 1111 inside the second opening h2. The first sub-electrode 1141 may be disposed on the first conductive semiconductor layer 1111. For example, according to the light emitting device 1100 according to the embodiment, the first sub-electrode 1141 penetrates the second conductive semiconductor layer 1113 and the active layer 1112 to form a first conductive semiconductor layer ( 1111) may be disposed on the upper surface of the first conductive semiconductor layer 1111 within a recess disposed in a partial area.

The first sub-electrode 1141 may be electrically connected to the upper surface of the first conductive semiconductor layer 1111 through the second opening h2 provided in the first reflective layer 1161. The second opening (h2) and the recess may overlap vertically, and for example, the first sub-electrode 1141 has the first sub-electrode 1141 in a plurality of recess areas, as shown in FIGS. 7 and 8. 1 may be directly contacted with the upper surface of the conductive semiconductor layer 1111.

The second sub-electrode 1142 may be electrically connected to the second conductive semiconductor layer 1113. The second sub-electrode 1142 may be disposed on the second conductive semiconductor layer 1113. According to an embodiment, the ohmic contact layer 1130 may be disposed between the second sub-electrode 1142 and the second conductive semiconductor layer 1113.

The second sub-electrode 1142 may be electrically connected to the second conductive semiconductor layer 1113 through the first opening h1 provided in the second reflective layer 1162. For example, as shown in FIGS. 7 and 8, the second sub-electrode 1142 is electrically connected to the second conductive semiconductor layer 1113 through the ohmic contact layer 1130 in a plurality of P regions. It can be connected to .

As shown in FIGS. 7 and 8, the second sub-electrode 1142 is connected to the ohmic contact layer through a plurality of first openings h1 provided in the second reflection layer 1162 in the plurality of P regions. 1130) can be directly contacted with the upper surface.

According to an embodiment, as shown in FIGS. 7 and 8, the first sub-electrode 1141 and the second sub-electrode 1142 may have polarities and may be arranged to be spaced apart from each other.

For example, the first sub-electrode 1141 may be provided in the shape of a plurality of lines. Additionally, the second sub-electrode 1142 may be provided in the shape of a plurality of lines, for example. The first sub-electrode 1141 may be disposed between a plurality of adjacent second sub-electrodes 1142. The second sub-electrode 1142 may be disposed between a plurality of adjacent first sub-electrodes 1141.

When the first sub-electrode 1141 and the second sub-electrode 1142 have different polarities, they may be arranged as different numbers of electrodes. For example, when the first sub-electrode 1141 is configured as an n electrode and the second sub-electrode 1142 is configured as a p electrode, the number of second sub-electrodes 1142 is greater than that of the first sub-electrode 1141. There may be more. When the electrical conductivity and/or resistance of the second conductive semiconductor layer 1113 and the first conductive semiconductor layer 1111 are different from each other, the first sub-electrode 1141 and the second sub-electrode 1142 By this, the electrons and holes injected into the semiconductor structure 1110 can be balanced, and thus the optical characteristics of the light emitting device can be improved.

The first sub-electrode 1141 and the second sub-electrode 1142 may be formed in a single-layer or multi-layer structure. For example, the first sub-electrode 1141 and the second sub-electrode 1142 may be ohmic electrodes. For example, the first sub-electrode 1141 and the second sub-electrode 1142 include ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag , Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy of two or more of these materials.

The light emitting device 1100 according to the embodiment may include a protective layer 1150, as shown in FIGS. 7 and 8.

The protective layer 1150 may include a plurality of third openings h3 exposing the second sub-electrode 1142. The plurality of third openings h3 may be arranged to correspond to the plurality of PB regions provided in the second sub-electrode 1142.

Additionally, the protective layer 1150 may include a plurality of fourth openings h4 exposing the first sub-electrode 1141. The plurality of fourth openings h4 may be arranged to correspond to the plurality of NB regions provided in the first sub-electrode 1141.

The protective layer 1150 may be disposed on the reflective layer 1160. The protective layer 1150 may be disposed on the first reflective layer 1161, the second reflective layer 1162, and the third reflective layer 1163.

For example, the protective layer 1150 may be provided as an insulating material. For example, the protective layer 1150 is Si _x O _y , SiO _x N _y , It may be formed of at least one material selected from the group including Si _x N _y and Al _x O _y .

The light emitting device 1100 according to the embodiment may include a first bonding portion 1171 and a second bonding portion 1172 disposed on the protective layer 1150, as shown in FIGS. 7 and 8. there is.

The first bonding part 1171 may be disposed on the first reflective layer 1161. Additionally, the second bonding part 1172 may be disposed on the second reflective layer 1162. The second bonding part 1172 may be arranged to be spaced apart from the first bonding part 1171.

The first bonding part 1171 may contact the upper surface of the first sub-electrode 1141 through the plurality of fourth openings h4 provided in the protective layer 1150 in the plurality of NB regions. The plurality of NB areas may be arranged to be vertically offset from the second opening h2. When the plurality of NB regions and the second opening h2 are vertically offset from each other, the current injected into the first bonding portion 1171 may be evenly spread in the horizontal direction of the first sub-electrode 1141, Therefore, current can be evenly injected into the plurality of NB areas.

Additionally, the second bonding portion 1172 may be in contact with the upper surface of the second sub-electrode 1142 through the plurality of third openings h3 provided in the protective layer 1150 in the plurality of PB regions. there is. When the plurality of PB regions and the plurality of first openings h1 do not overlap vertically, the current injected into the second bonding part 1172 will be evenly spread in the horizontal direction of the second sub-electrode 1142. Therefore, current can be evenly injected in the plurality of PB areas.

According to the light emitting device 1100 according to the embodiment, the first bonding part 1171 and the first sub-electrode 1141 may be in contact with the plurality of fourth openings h4 areas. Additionally, the second bonding part 1172 and the second sub-electrode 1142 may contact each other in a plurality of areas. Accordingly, according to the embodiment, power can be supplied through a plurality of areas, so there is an advantage in that a current dispersion effect occurs and the operating voltage can be reduced by increasing the contact area and dispersing the contact area.

In addition, according to the light emitting device 1100 according to the embodiment, as shown in FIG. 8, the first reflective layer 1161 is disposed below the first sub-electrode 1141, and the second reflective layer 1162 It is disposed below the second sub-electrode 1142. Accordingly, the first reflective layer 1161 and the second reflective layer 1162 reflect light emitted from the active layer 1112 of the semiconductor structure 1110 to form the first sub-electrode 1141 and the second sub-electrode ( 1142), the light intensity (Po) can be improved by minimizing light absorption.

For example, the first reflective layer 1161 and the second reflective layer 1162 are made of an insulating material, but a material with high reflectivity, for example, a DBR structure, is used to reflect light emitted from the active layer 1112. It can be achieved.

The first reflective layer 1161 and the second reflective layer 1162 may form a DBR structure in which materials with different refractive indices are repeatedly disposed. For example, the first reflective layer 1161 and the second reflective layer 1162 may be arranged in a single-layer or stacked structure including at least one of TiO ₂ , SiO ₂ , Ta ₂ O ₅ , and HfO ₂ .

In addition, according to another embodiment, without being limited thereto, the first reflective layer 1161 and the second reflective layer 1162 emit light from the active layer 1112 according to the wavelength of light emitted from the active layer 1112. It can be freely selected to control the reflectance of light.

Additionally, according to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided as an ODR layer. According to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided in a hybrid form in which a DBR layer and an ODR layer are stacked.

When the light emitting device according to the embodiment is mounted using a flip chip bonding method and implemented as a light emitting device package, light provided from the semiconductor structure 1110 may be emitted through the substrate 1105. Light emitted from the semiconductor structure 1110 may be reflected by the first reflective layer 1161 and the second reflective layer 1162 and be emitted in the direction of the substrate 1105.

Additionally, light emitted from the semiconductor structure 1110 may also be emitted in a lateral direction of the semiconductor structure 1110. In addition, the light emitted from the semiconductor structure 1110 is directed to the first bonding portion 1171 and the second bonding portion among the surfaces on which the first bonding portion 1171 and the second bonding portion 1172 are disposed. It may be emitted to the outside through an area where the part 1172 is not provided.

Specifically, the light emitted from the semiconductor structure 1110 is directed to the first reflective layer 1161 and the second reflective layer among the surfaces on which the first bonding portion 1171 and the second bonding portion 1172 are disposed. (1162), it may be emitted to the outside through an area where the third reflective layer 1163 is not provided.

Accordingly, the light emitting device 1100 according to the embodiment can emit light in six directions surrounding the semiconductor structure 1110, and the luminous intensity can be significantly improved.

Meanwhile, according to the light emitting device according to the embodiment, when viewed from the upper direction of the light emitting device 1100, the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is equal to the area of the first bonding part 1172. The portion 1171 and the second bonding portion 1172 may be provided equal to or smaller than 60% of the total area of the upper surface of the light emitting device 1100 where the portion 1171 and the second bonding portion 1172 are disposed.

For example, the total area of the upper surface of the light emitting device 1100 may correspond to an area defined by the horizontal and vertical lengths of the lower surface of the first conductive semiconductor layer 1111 of the semiconductor structure 1110. . Additionally, the total area of the top surface of the light emitting device 1100 may correspond to the area of the top or bottom surface of the substrate 1105.

In this way, the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is provided to be equal to or smaller than 60% of the total area of the light emitting device 1100, so that the first bonding part 1172 The amount of light emitted from the surface where the part 1171 and the second bonding part 1172 are disposed can be increased. Accordingly, according to the embodiment, the amount of light emitted in the six-sided direction of the light-emitting device 1100 increases, thereby improving light extraction efficiency and increasing the luminous intensity (Po).

In addition, when viewed from the top of the light-emitting device 1100, the sum of the areas of the first bonding portion 1171 and the area of the second bonding portion 1172 is 30% of the total area of the light-emitting device 1100. It can be provided as equal or greater than the %.

In this way, the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is provided to be equal to or greater than 30% of the total area of the light emitting device 1100, so that the first bonding part 1172 Stable mounting can be performed through the portion 1171 and the second bonding portion 1172, and the electrical characteristics of the light emitting device 1100 can be secured.

In the light emitting device 1100 according to the embodiment, in consideration of securing light extraction efficiency and bonding stability, the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 is the light emitting device 1100. ) may be selected to be more than 30% and less than 60% of the total area of the area.

That is, when the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is 30% or more and 100% or less of the total area of the light emitting device 1100, the Stable mounting can be performed by securing electrical characteristics and securing bonding force for mounting on the light emitting device package.

In addition, when the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is greater than 0% and less than 60% of the total area of the light emitting device 1100, the first bonding part 1171 ) and the amount of light emitted from the surface on which the second bonding portion 1172 is disposed increases, thereby improving the light extraction efficiency of the light emitting device 1100 and increasing the luminous intensity (Po).

In the embodiment, in order to secure the electrical characteristics of the light emitting device 1100 and the bonding force mounted on the light emitting device package and increase the luminous intensity, the area of the first bonding portion 1171 and the second bonding portion 1172 The sum of was selected to be 30% or more and 60% or less of the total area of the light emitting device 1100.

Additionally, according to the light emitting device 1100 according to the embodiment, the third reflective layer 1163 may be disposed between the first bonding part 1171 and the second bonding part 1172. For example, the length W5 of the third reflective layer 1163 along the long axis direction of the light emitting device 1100 corresponds to the gap between the first bonding portion 1171 and the second bonding portion 1172. can be placed. Additionally, the area of the third reflective layer 1163 may be, for example, 10% or more and 25% or less of the entire upper surface of the light emitting device 1100.

When the area of the third reflective layer 1163 is 10% or more of the entire upper surface of the light emitting device 1100, discoloration or cracking of the package body disposed below the light emitting device can be prevented, and 25% If it is below, it is advantageous to secure light extraction efficiency that allows light to be emitted from all six sides of the light emitting device.

Additionally, in another embodiment, the area of the third reflective layer 1163 is not limited to this and is arranged to be greater than 0% to less than 10% of the entire upper surface of the light emitting device 1100 in order to secure greater light extraction efficiency. In order to prevent discoloration or cracks in the package body, the area of the third reflective layer 1163 can be arranged to exceed 25% to less than 100% of the entire upper surface of the light emitting device 1100. .

In addition, a second region is created in the semiconductor structure 1110 between the first bonding part 1171 or the second bonding part 1172 adjacent to the side surface disposed in the long axis direction of the light emitting device 1100. The light can be transmitted and emitted.

In addition, the light generated from the light emitting structure is transmitted to a third area provided between the first bonding part 1171 or the second bonding part 1172 adjacent to the side disposed in the short axis direction of the light emitting device 1100. It can be transmitted and released.

According to an embodiment, the size of the first reflective layer 1161 may be several micrometers larger than the size of the first bonding portion 1171. For example, the area of the first reflective layer 1161 may be provided to be large enough to completely cover the area of the first bonding part 1171. Considering process errors, the length of one side of the first reflective layer 1161 may be, for example, 4 micrometers to 10 micrometers larger than the length of one side of the first bonding portion 1171.

Additionally, the size of the second reflective layer 1162 may be several micrometers larger than the size of the second bonding portion 1172. For example, the area of the second reflective layer 1162 may be provided to be large enough to completely cover the area of the second bonding part 1172. Considering process errors, the length of one side of the second reflective layer 1162 may be, for example, 4 micrometers to 10 micrometers larger than the length of one side of the second bonding portion 1172.

According to an embodiment, the light emitted from the semiconductor structure 1110 is transmitted by the first reflective layer 1161 and the second reflective layer 1162 to the first bonding portion 1171 and the second bonding portion 1172. ) can be reflected rather than incident on it. Accordingly, according to the embodiment, loss of light generated and emitted from the semiconductor structure 1110 when incident on the first bonding part 1171 and the second bonding part 1172 can be minimized.

In addition, according to the light emitting device 1100 according to the embodiment, the third reflective layer 1163 is disposed between the first bonding part 1171 and the second bonding part 1172, so that the first bonding part ( It is possible to control the amount of light emitted between 1171) and the second bonding portion 1172.

As described above, the light emitting device 1100 according to the embodiment may be mounted, for example, using a flip chip bonding method and provided in the form of a light emitting device package. At this time, when the package body on which the light-emitting device 1100 is mounted is made of resin, etc., the package body is discolored in the lower area of the light-emitting device 1100 by strong short-wavelength light emitted from the light-emitting device 1100. or cracks may occur.

However, according to the light emitting device 1100 according to the embodiment, the amount of light emitted between the area where the first bonding part 1171 and the second bonding part 1172 are arranged can be adjusted, so the light emitting device 1100 ) can prevent the package body placed in the lower area from discoloring or cracking.

According to an embodiment, the semiconductor is present in an area of 20% or more of the upper surface of the light emitting device 1100 where the first bonding part 1171, the second bonding part 1172, and the third reflective layer 1163 are disposed. Light generated in the structure 1110 may be transmitted and emitted.

Accordingly, according to the embodiment, the amount of light emitted in the six-sided direction of the light-emitting device 1100 increases, thereby improving light extraction efficiency and increasing the luminous intensity (Po). Additionally, it is possible to prevent the package body disposed close to the lower surface of the light emitting device 1100 from discoloring or cracking.

Additionally, according to the light emitting device 1100 according to the embodiment, a plurality of contact holes C1, C2, and C3 may be provided in the ohmic contact layer 1130. The second conductive semiconductor layer 1113 and the reflective layer 1160 may be bonded through a plurality of contact holes C1, C2, and C3 provided in the ohmic contact layer 1130. Since the reflective layer 1160 can be in direct contact with the second conductive semiconductor layer 1113, adhesion can be improved compared to when the reflective layer 1160 is in contact with the ohmic contact layer 1130.

When the reflective layer 1160 is in direct contact only with the ohmic contact layer 1130, the bonding force or adhesion between the reflective layer 1160 and the ohmic contact layer 1130 may be weakened. For example, when an insulating layer and a metal layer are combined, the bonding or adhesion between the materials may be weakened.

For example, if the bonding force or adhesion between the reflective layer 1160 and the ohmic contact layer 1130 is weak, peeling may occur between the two layers. In this way, if separation occurs between the reflective layer 1160 and the ohmic contact layer 1130, the characteristics of the light-emitting device 1100 may deteriorate, and the reliability of the light-emitting device 1100 cannot be secured.

However, according to the embodiment, the reflective layer 1160 may be in direct contact with the second conductive semiconductor layer 1113, so that the reflective layer 1160, the ohmic contact layer 1130, and the second conductive semiconductor layer The bonding force and adhesion force between the layers 1113 can be stably provided.

Therefore, according to the embodiment, the bonding force between the reflective layer 1160 and the second conductive semiconductor layer 1113 can be stably provided, thereby preventing the reflective layer 1160 from being peeled off from the ohmic contact layer 1130. It can be prevented. In addition, since the bonding force between the reflective layer 1160 and the second conductive semiconductor layer 1113 can be stably provided, the reliability of the light emitting device 1100 can be improved.

Meanwhile, as described above, a plurality of contact holes C1, C2, and C3 may be provided in the ohmic contact layer 1130. Light emitted from the active layer 1112 is incident on the reflective layer 1160 through a plurality of contact holes C1, C2, and C3 provided in the ohmic contact layer 1130 and can be reflected. Accordingly, loss of light generated in the active layer 1112 when incident on the ohmic contact layer 1130 can be reduced, and light extraction efficiency can be improved. Accordingly, the light intensity can be improved according to the light emitting device 1100 according to the embodiment.

Next, another example of a flip chip light emitting device applied to a light emitting device package according to an embodiment will be described with reference to the attached drawings.

First, a light emitting device according to an embodiment will be described with reference to FIGS. 9 and 10. FIG. 9 is a plan view illustrating the electrode arrangement of a light-emitting device applied to a light-emitting device package according to an embodiment, and FIG. 10 is a cross-sectional view taken along line F-F of the light-emitting device shown in FIG. 9.

Meanwhile, to aid understanding, in FIG. 9 , only the relative arrangement relationship between the first electrode 127 and the second electrode 128 is conceptually shown. The first electrode 127 may include a first bonding portion 121 and a first branch electrode 125. The second electrode 128 may include a second bonding portion 122 and a second branch electrode 126.

Unlike the embodiment in which the flip chip light emitting device of FIG. 7 is arranged, the area of the first and second bonding portions 121 and 122 of the first light emitting device 120A and the light emitting structure 123 of the first light emitting device 120A The area ratio may be different. A light emitting device according to an embodiment may include a light emitting structure 123 disposed on a substrate 124, as shown in FIGS. 9 and 10.

The substrate 124 may be selected from the group including sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 124 may be provided as a Patterned Sapphire Substrate (PSS) with a concavo-convex pattern formed on its upper surface.

The light emitting structure 123 may include a first conductive semiconductor layer 123a, an active layer 123b, and a second conductive semiconductor layer 123c. The active layer 123b may be disposed between the first conductive semiconductor layer 123a and the second conductive semiconductor layer 123c. For example, the active layer 123b may be disposed on the first conductive semiconductor layer 123a, and the second conductive semiconductor layer 123c may be disposed on the active layer 123b.

According to an embodiment, the first conductive semiconductor layer 123a may be provided as an n-type semiconductor layer, and the second conductive semiconductor layer 123c may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductive semiconductor layer 123a may be provided as a p-type semiconductor layer, and the second conductive semiconductor layer 123c may be provided as an n-type semiconductor layer.

The light emitting device according to the embodiment may include a first electrode 127 and a second electrode 128, as shown in FIGS. 9 and 10.

The first electrode 127 may include a first bonding portion 121 and a first branch electrode 125. The first electrode 127 may be electrically connected to the second conductive semiconductor layer 123c. The first branch electrode 125 may be disposed to branch from the first bonding portion 121 . The first branch electrode 125 may include a plurality of branch electrodes branched from the first bonding portion 121.

The second electrode 128 may include a second bonding portion 122 and a second branch electrode 126. The second electrode 128 may be electrically connected to the first conductive semiconductor layer 123a. The second branch electrode 126 may be disposed to branch from the second bonding portion 122 . The second branch electrode 126 may include a plurality of branch electrodes branched from the second bonding portion 122.

The first branch electrode 125 and the second branch electrode 126 may be arranged to stagger each other in a finger shape. Power supplied through the first bonding part 121 and the second bonding part 122 by the first branch electrode 125 and the second branch electrode 126 is supplied to the entire light emitting structure 123. It can be spread and provided.

The first electrode 127 and the second electrode 128 may be formed in a single-layer or multi-layer structure. For example, the first electrode 127 and the second electrode 128 may be ohmic electrodes. For example, the first electrode 127 and the second electrode 128 include ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni , Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy of two or more of these materials.

Meanwhile, a protective layer may be further provided on the light emitting structure 123. The protective layer may be provided on the upper surface of the light emitting structure 123. Additionally, the protective layer may be provided on the side of the light emitting structure 123. The protective layer may be provided so that the first bonding part 121 and the second bonding part 122 are exposed. Additionally, the protective layer may be selectively provided on the periphery and bottom of the substrate 124.

By way of example, the protective layer may be provided as an insulating material. For example, the protective layer is Si _x O _y , SiO _x N _y , It may be formed of at least one material selected from the group including Si _x N _y and Al _x O _y .

In the light emitting device according to the embodiment, light generated in the active layer 123b may be emitted in the direction of six sides of the light emitting device. Light generated in the active layer 123b may be emitted in six directions through the top, bottom, and four sides of the light emitting device.

Light emitted from the upper surface of the light emitting device may be incident on the first and second recesses R1 and R2 regions described above.

For reference, the vertical arrangement direction of the light emitting device described with reference to FIG. 2 and the vertical arrangement direction of the light emitting device shown in FIGS. 9 and 10 are shown opposite to each other.

As explained with reference to FIG. 2, the light emitted between the first bonding part 121 and the second bonding part 122 is transmitted to the first resin part disposed in the first recess R1 area ( 131). Light emitted toward the bottom of the light emitting device can be diffused by the first resin part 131, and light extraction efficiency can be improved.

Additionally, according to an embodiment, the sum of the areas of the first and second bonding parts 121 and 122 may be 10% or less based on the top surface area of the substrate 124. According to the light emitting device package according to the embodiment, in order to secure the light emitting area emitted from the light emitting device and increase light extraction efficiency, the sum of the areas of the first and second bonding portions 121 and 122 is equal to that of the substrate 124. It can be set to 10% or less based on the top surface area.

Additionally, according to an embodiment, the sum of the areas of the first and second bonding parts 121 and 122 may be 0.7% or more based on the top surface area of the substrate 124. According to the light emitting device package according to the embodiment, in order to provide stable bonding force to the mounted light emitting device, the sum of the areas of the first and second bonding parts 121 and 122 is based on the top surface area of the substrate 124. It can be set to 0.7% or more.

For example, the width of the first bonding portion 121 along the long axis direction of the light emitting device may be several tens of micrometers. The width of the first bonding portion 121 may be, for example, 70 micrometers to 90 micrometers. Additionally, the area of the first bonding portion 121 may be several thousand square micrometers.

Additionally, the width of the second bonding portion 122 along the long axis direction of the light emitting device may be several tens of micrometers. The width of the second bonding portion 122 may be, for example, 70 micrometers to 90 micrometers. Additionally, the area of the second bonding portion 122 may be several thousand square micrometers.

In this way, as the areas of the first and second bonding portions 121 and 122 are provided to be small, the amount of light transmitted through the lower surface of the first light emitting device 120A can be increased. Additionally, the resin portion 130 with good reflective characteristics may be provided below the first light emitting device 120A. Accordingly, the light emitted toward the bottom of the first light emitting device 120A is reflected by the resin portion 130 and is effectively emitted toward the top of the light emitting device package, thereby improving light extraction efficiency.

Meanwhile, the light emitting device package according to the embodiment described above is described based on the case where the first and second bonding parts 121 and 122 are in direct contact with the first and second conductive layers 321 and 322. It has been done.

However, according to another example of the light emitting device package according to the embodiment, a separate conductive component is provided between the first and second bonding portions 121 and 122 and the first and second conductive layers 321 and 322. More may be placed.

Meanwhile, the light emitting device package according to the described embodiment can be applied to a light source device.

Additionally, the light source device may include a display device, a lighting device, a headlamp, etc. depending on the industrial field.

As an example of a light source device, a display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module that emits light and includes a light emitting element, and a light emitting module disposed in front of the reflector and guiding the light emitted from the light emitting module forward. A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, and the display panel It may include a color filter disposed in the front. Here, the bottom cover, reflector, light emitting module, light guide plate, and optical sheet may form a backlight unit. Additionally, the display device may not include a color filter and may have a structure in which light emitting elements that emit red, green, and blue light are respectively disposed.

As another example of a light source device, a headlamp includes a light emitting module including a light emitting element package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a certain direction, for example, forward, and a light that is reflected by the reflector. It may include a lens that refracts light forward, and a shade that blocks or reflects a portion of the light reflected by the reflector and heading to the lens to achieve a light distribution pattern desired by the designer.

A lighting device, which is another example of a light source device, may include a cover, a light source module, a heat sink, a power supply unit, an internal case, and a socket. Additionally, the light source device according to the embodiment may further include one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment.

The features, structures, effects, etc. described in the embodiments above are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified and implemented in other embodiments by a person with ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

Although the above description focuses on the examples, this is only an example and does not limit the examples, and those skilled in the art will understand that there are various options not exemplified above without departing from the essential characteristics of the examples. You will see that variations and applications of branches are possible. For example, each component specifically shown in the examples can be modified and implemented. And the differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended patent claims.

110: package body, 111 first frame, 112 second frame
113 body, 120A first light emitting device 120B second light emitting device 120C third light emitting device
121 first bonding part, 122 second bonding part, 123 light emitting structure, 124 substrate,
130 resin part, 135 5th resin part, 140 molding part
R1 first recess, R2 second recess, R3 third upper recess, R4 fourth upper recess
TH1 first opening TH2 second opening

Claims (10)

A plurality of frames including first to third frames arranged to be spaced apart from each other;
A body supporting the first to third frames;
Electrically connected to the first and second frames adjacent to each other, a first region disposed on the first frame, a second region disposed on the second frame, and between the first region and the second region. a first light emitting device including a third region disposed on the body;
Electrically connected to the second and third frames adjacent to each other, a fourth region disposed on the second frame, a fifth region disposed on the third frame, and between the fourth region and the fifth region. a second light emitting device including a sixth region disposed on the body;
a first resin portion disposed between the body and the first light emitting device and extending outwardly on both sides of the first light emitting device facing each other between the first and second frames;
A second resin portion disposed between the body and the second light-emitting device and extending outwardly on both sides of the second light-emitting device facing each other between the second and third frames,
The body includes a first recess formed on an upper surface of the body between the first and second frames and a second recess formed on an upper surface of the body between the second and third frames,
The first frame includes a third recess disposed along an outer edge of the first area of the first light emitting device,
The second frame includes a fourth recess disposed along an outer edge of the second region of the first light emitting device, and a fifth recess disposed along an outer edge of the fourth region of the second light emitting device. Contains,
The third frame includes a sixth recess disposed along an outer edge of the fifth region of the second light emitting device,
The first resin part is disposed in the first recess below the first light emitting device,
The second resin part is disposed in the second recess below the second light emitting device,
The width of the first recess in the long axis direction of the first light emitting device is in the range of 5% to 80% of the length of the first light emitting device in the long axis direction of the first light emitting device. delete According to claim 1,
A light emitting device package wherein the depth of the first recess is in the range of 40㎛ to 60㎛. delete delete delete According to claim 1,
The first light emitting device includes first and second bonding portions arranged to be spaced apart from each other at a lower portion of the first light emitting device,
The first bonding portion is disposed between the first resin portion and a third resin portion disposed in the third recess,
The second bonding part is a light emitting device package disposed between the first resin part and the fourth resin part disposed in the fourth recess. delete delete According to claim 1,
A light emitting device package wherein at least one of the first and second resin parts is made of a reflective material.