KR20220075201A - Light emitting device package - Google Patents

Abstract

A light emitting device package according to an embodiment includes a plurality of frames spaced apart from each other; a body supporting the plurality of frames; a plurality of light emitting devices disposed on the body, each of which is electrically connected to two adjacent frames among the plurality of frames; and a first resin part disposed between the body and the light emitting device and extending to the outside of the light emitting device.

Description

Light emitting device package {LIGHT EMITTING DEVICE PACKAGE}

The embodiment relates to a light emitting device package, a light emitting device package manufacturing method, and a light source device.

A semiconductor device including a compound such as GaN or AlGaN has many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials have developed red, green, and It has the advantage of being able to implement light of various wavelength bands, such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material may be implemented as a white light source with good efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light receiving device such as a photodetector or a solar cell is manufactured using a group 3-5 or group 2-6 compound semiconductor material, a photocurrent is generated by absorbing light in various wavelength ranges through the development of the device material. By doing so, light of various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, such a light receiving element has advantages of fast response speed, safety, environmental friendliness, and easy adjustment of element materials, and thus can be easily used in power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace a light emitting diode backlight, a fluorescent lamp or an incandescent light bulb that replaces a cold cathode fluorescence lamp (CCFL) constituting a transmission module of an optical communication means and a backlight of a liquid crystal display (LCD) display device. The application is expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device may be extended to high-frequency application circuits, other power control devices, and communication modules.

A light emitting device (Light Emitting Device) may be provided as a p-n junction diode having a characteristic in which electric energy is converted into light energy by using, for example, a group 3-5 element or a group 2-6 element on the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors are receiving great attention in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet (UV) light emitting device, and a red light emitting device using a nitride semiconductor have been commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that emits light distributed in a wavelength range of 200 nm to 400 nm. can be used

Ultraviolet rays can be divided into UV-A (315nm~400nm), UV-B (280nm~315nm), and UV-C (200nm~280nm) in the order of the longest wavelength. The UV-A (315nm~400nm) area is applied in various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit detection, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm~315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

On the other hand, according to the prior art, there is an issue of bonding force between the package body and the light emitting device, and accordingly, there is a reliability issue due to a decrease in the bonding force.

In addition, in the light emitting device package of the prior art, there are issues of bonding strength and bonding reliability between the electrode of the package body and the light emitting device.

For example, when a conventional light emitting device package is mounted on a submount or a circuit board, a high temperature process such as reflow is applied. A re-melting phenomenon occurs in the region, thereby weakening the stability of the electrical connection or physical bonding, and thus there is a problem of electrical and physical reliability.

In addition, as a light emitting device capable of providing a high output is requested in current and future technologies, research on a light emitting device capable of increasing the output by applying a high power is being conducted, but countermeasures against this are weak.

In particular, when high power is applied to the light emitting device, the reliability of the light emitting device may be deteriorated, and when several light emitting devices are employed, there is a problem in that the size of the semiconductor package increases.

In addition, in the prior art, research on a method for improving the light extraction efficiency of the light emitting device and improving the luminous intensity at the package stage is being conducted.

In addition, in the prior art, in the light emitting device package, research is being conducted on a method for reducing manufacturing cost and improving manufacturing yield by improving process efficiency and changing the structure.

One of the technical problems of the embodiment is to provide a light emitting device package capable of improving the bonding force between the package body and the light emitting device, a manufacturing method thereof, and a light source device including the same.

In addition, one of the technical problems of the embodiment is to provide a light emitting device package capable of solving the problem of electrical and physical reliability in a bonding region between an electrode of the package body and the light emitting device electrode, a manufacturing method thereof, and a light source device including the same.

In addition, one of the technical problems of the embodiment is to provide a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

In addition, one of the technical problems of the embodiment is to provide a light emitting device package capable of improving luminosity, a manufacturing method thereof, and a light source device including the same.

In addition, one of the technical problems of the embodiment is to provide a light emitting device package capable of reducing manufacturing cost and improving manufacturing yield through process efficiency improvement and structural change, a manufacturing method thereof, and a light source device including the same.

The technical problem of the embodiment is not limited to the matters described in this item, and includes those that can be grasped through the description of the invention.

The light emitting device package according to the embodiment includes a first frame 111 and a second frame 112 that are disposed to be spaced apart from each other; a third frame 153 disposed between the first frame 111 and the second frame 112 and spaced apart from the first frame 111 and the second frame 112; a body 113 supporting the first to third frames 111, 112, and 153; a first light emitting device disposed on the body 113 and electrically connected to the first frame 111 and the third frame 153; and a second light emitting device 120B disposed on the body 113 and electrically connected to the second frame 112 and the third frame 153 .

The body 113 includes a first recess R1 in an upper region between the first frame 111 and the third frame 153 and the third frame 153 and the second frame 112 . A second recess R2 may be included in the upper region therebetween.

The embodiment may include a first resin part 131 disposed in the first recess R1 and a second resin part 132 disposed in the second recess R2 .

The first light emitting device 120A includes a first bonding part 121 and a second bonding part 122, is disposed on the first resin part 131, and is disposed on the first frame 111 and the first resin part 131. 3 It may be electrically connected to the frame 153 .

The second light emitting device 120B includes a third bonding portion 121b and a fourth bonding portion 122b, is disposed on the second resin portion 132, and includes the second frame 112 and the second bonding portion 132. 3 It may be electrically connected to the frame 153 .

According to the embodiment, it is possible to provide a light emitting device package capable of improving the bonding force between the package body and the light emitting device, a manufacturing method thereof, and a light source device including the same.

Further, according to the embodiment, it is possible to provide a light emitting device package, a method for manufacturing the same, and a light source device including the same, having excellent electrical and physical reliability in the bonding region between the electrode of the package body and the electrode of the light emitting device.

For example, according to the light emitting device package and the light emitting device manufacturing method according to the embodiment, a re-melting phenomenon is prevented from occurring in the bonding region of the light emitting device package in the process of re-bonding the light emitting device package to a substrate or the like. There are advantages to doing.

Further, according to the embodiment, it is possible to provide a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

Further, according to the embodiment, it is possible to provide a light emitting device package capable of improving luminous intensity, a method for manufacturing the same, and a light source device including the same.

Further, according to the embodiment, it is possible to provide a light emitting device package capable of reducing a manufacturing cost and improving a manufacturing yield by improving process efficiency and changing a structure, a manufacturing method thereof, and a light source device including the same.

The technical effect of the embodiment is not limited to the matters described in this item, and includes those that can be grasped through the description of the invention.

1 is a plan view of a light emitting device package according to a first embodiment;
FIG. 2 is a cross-sectional view taken along line DD of the light emitting device package shown in FIG. 1 ;
3 is a conceptual view in which the light emitting device package shown in FIG. 1 is disposed on a circuit board;
4 is a plan view of a light emitting device package according to a second embodiment;
5 is a plan view of a light emitting device package according to a third embodiment;
6 is a plan view of a light emitting device package according to a fourth embodiment;
7 is a plan view illustrating an example of a light emitting device applied to a light emitting device package according to the embodiment.
8 is a cross-sectional view taken along line AA of the light emitting device shown in FIG. 7 ;
9 is a plan view illustrating an electrode arrangement of a light emitting device applied to a light emitting device package according to an embodiment;
10 is a cross-sectional view taken along line FF of the light emitting device shown in FIG.

Hereinafter, an embodiment will be described with reference to the accompanying drawings. In the description of an embodiment, each layer (film), region, pattern or structure is “on/over” or “under” the substrate, each layer (film), region, pad or pattern. In the case of being described as being formed on, “on/over” and “under” include both “directly” or “indirectly” formed through another layer. do. In addition, the reference for the upper / upper or lower of each layer will be described with reference to the drawings, but the embodiment is not limited thereto.

Hereinafter, a light emitting device package and a light emitting device package manufacturing method according to an embodiment will be described in detail with reference to the accompanying drawings. Hereinafter, a case in which a light emitting device is applied as an example of a semiconductor device will be described.

<First embodiment>

First, the light emitting device package 100 according to the first embodiment will be described with reference to FIGS. 1 to 2 .

1 is a plan view of a light emitting device package 100 according to a first embodiment, and FIG. 2 is a cross-sectional view taken along line D-D of the light emitting device package shown in FIG. 1 .

1 , the light emitting device package 100 according to the first embodiment includes a package body 110 and a plurality of light emitting devices disposed on the package body 110 to realize high output light output. For example, the embodiment may include, but is not limited to, the first light emitting device 120A and the second light emitting device 120B, and three or more light emitting devices may be provided to realize high output light output.

The package body 110 may include a plurality of frames. For example, the package body 110 may include a first frame 111, a second frame 112, and a third frame 153 spaced apart from each other, but is not limited thereto, and includes four or more frames. You may.

At this time, power may be directly applied to the first frame 111 and the second frame 112 from electrodes of separate circuit boards, and the third frame 153 may not receive direct power. , may be referred to as an intermediate frame, a connection frame, or a bridge frame, and the plurality of light emitting devices are connected in series so that high power can be applied to realize high output light output (6V, 9V, 12V, etc.) , when power is directly applied to the third frame 153 that is an intermediate frame, a dimming function may also be implemented.

In addition, the package body 110 may include a body 113 serving as a support part, and may serve as an adhesive in the upper region overlapping the first light emitting device 120A and the second light emitting device 120B. It may include a branch 130 . For example, the embodiment includes a first resin part 131 and a second resin part 132 in an upper region overlapping the first light emitting device 120A and the second light emitting device 120B, respectively, so that the package body and It is possible to improve bonding strength between the light emitting devices.

In addition, the first resin part 131 and the second resin part 132 may extend to the outside of the first light emitting device 120A and the second light emitting device 120B, respectively, and in this case, when bonding is performed It is possible to improve electrical reliability by preventing an electrical short circuit by blocking the lateral expansion of the paste.

Also, the package body 110 may include a third and fifth resin part 135 around the first and second light emitting devices 120A and 120B. For example, the fifth resin part 135 may be disposed below and/or on side surfaces of the first and second light emitting devices 120A and 120B to perform a sealing function. In addition, the fifth resin part 135 may improve adhesion between the first and second light emitting devices 120A and 120B and the first to third frames 111 , 112 , and 153 .

Hereinafter, the technical features of the applied invention will be described in more detail with reference to FIG. 2 .

(body, body recess, resin part)

Referring to FIG. 2 , the light emitting device package 100 according to the embodiment includes a first frame 111 , a second frame 112 , and a third frame 153 spaced apart from each other in a body 113 constituting the package body. may include The first light emitting device 120A is disposed on the body 113 and may be electrically connected to the first frame 111 and the third frame 153, and the second light emitting device 120B is disposed on the body ( 113 ) and may be electrically connected to the second frame 112 and the third frame 153 .

The body 113 may be disposed between the first frame 111 , the third frame 153 , and the second frame 112 . The body 113 may function as a kind of electrode separation line. The body 113 may be referred to as an insulating member.

For example, the body 113 may include polyphthalamide (PPA: Polyphthalamide), PCT (Polychloro Triphenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy molding compound (EMC), It may be formed of at least one selected from a group including a silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), and sapphire (Al ₂ O ₃ ). Also, the body 113 may include a high refractive filler such as TiO ₂ and SiO ₂ .

In addition, the body 113 may be disposed to extend upwardly on one side of the first frame 111 . In addition, the body 113 may be disposed to extend upwardly on one side of the second frame 112 . Through this, the body 113 may provide an inclined surface disposed above the first frame 111 and the second frame 112 . A cavity C may be provided on the first frame 111 and the second frame 112 by the inclined surface of the body 113 .

According to an embodiment, the package body 110 may be provided in a structure having a cavity (C) or may be provided in a structure having a flat top surface without the cavity (C).

One of the technical problems of the embodiment is to provide a light emitting device package capable of improving bonding strength between the package body and the light emitting device, a manufacturing method thereof, and a light source device including the same.

In order to solve this technical problem, the light emitting device package 100 according to the embodiment includes a recess in the upper region of the body 113, as shown in FIG. 2, and the resin part 130 (see FIG. 1). can be placed.

For example, in the embodiment, the body 113 includes a first recess R1 formed in an upper region between the first frame 111 and the third frame 153 and the third frame 153 and the A second recess R2 formed in an upper region between the second frames 112 may be included.

The first recess R1 and the second recess R2 may be provided to be concave in a direction from an upper surface to a lower surface of the body 113 . The first recess R1 may be disposed under the first light emitting device 120A. The second recess R2 may be disposed under the second light emitting device 120B.

In the embodiment, the first resin part 131 disposed in the first recess R1 of the body 113 and the second resin part 132 disposed in the second recess R2 of the body 113 are provided. may include, wherein the first and second resin parts 131 and 132 are disposed between the first and second light emitting devices 120A and 120B and the body 113, and the body 113 and the first The coupling force between the light emitting device 120A and the second light emitting device 120B may be increased.

The resin unit 130 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material.

Accordingly, the resin part 130 may provide a stable fixing force between the first and second light emitting devices 120A and 120B and the package body 110 .

According to the embodiment, it is possible to provide a light emitting device package capable of improving bonding strength between the package body and the light emitting device, a manufacturing method thereof, and a light source device including the same.

The resin part 130 may be disposed in direct contact with the upper surface of the body 113 . In addition, the resin part 130 may be disposed in direct contact with the lower surfaces of the first and second light emitting devices 120A and 120B.

In addition, in the embodiment, when light is emitted to the lower surfaces of the first and second light emitting devices 120A and 120B, the resin part 130 includes the first and second light emitting devices 120A and 120B and the body ( 113), the light extraction efficiency of the light emitting device package 100 may be improved by providing a light diffusion function.

Also, in an embodiment, the resin part 130 may reflect the light emitted from the first and second light emitting devices 120A and 120B. When the resin part 130 includes a reflective function, the resin part 130 may be made of a material including TiO ₂ , Silicone, etc., and the resin part 130 is made of white silicone. can be configured.

Accordingly, according to the embodiment, it is possible to provide a light emitting device package capable of improving luminous intensity, a manufacturing method thereof, and a light source device including the same.

Also, referring to FIG. 1 , the first resin part 131 and the second resin part 132 may extend to the outside of the first light emitting device 120A and the second light emitting device 120B, respectively, and , in this case, it is possible to improve electrical reliability by preventing an electrical short circuit by blocking the lateral expansion of the paste during bonding.

Referring back to FIG. 2 , in the embodiment, the depth T1 of the first and second recesses R1 and R2 may be determined in consideration of the adhesive force of the resin part 130 , and the stability of the body 113 may be reduced. It may be determined so that cracks do not occur in the light emitting device package 100 by taking the intensity into consideration or heat emitted from the first and second light emitting devices 120A and 120B.

The first and second recesses R1 and R2 may provide an appropriate space under the first and second light emitting devices 120A and 120B to perform a kind of underfill process. Here, in the underfill process, the first and second light emitting devices 120A and 120B are mounted on the package body 110 and then the resin part 130 is applied to the first and second light emitting devices 120A, 120B) may be a process of arranging the lower part.

Alternatively, in the process of mounting the first and second light emitting devices 120A and 120B on the package body 110 , the resin part 130 is mounted through the resin part 130 in the first and second parts. It may be a process of disposing the first and second light emitting devices 120A and 120B after disposing them in the recesses R1 and R2.

Referring to FIG. 2 , the depth T1 and the width W4 of the first recess R1 may affect the formation position and fixing force of the resin part 130 . For example, the depth T1 and the width W4 of the first recess R1 are in the first resin part 131 disposed between the body 113 and the first light emitting device 120A. It may be determined so that sufficient fixing force can be provided by this.

For example, the depth T1 of the first recess R1 may be several tens of micrometers. A depth T1 of the first recess R1 may be 40 micrometers to 60 micrometers.

Also, the width W4 of the first recess R1 may be several tens of micrometers to several hundred micrometers. Here, the width W4 of the first recess R1 is provided in the long axis direction of the first light emitting device 120A in order to secure a fixing force between the first light emitting device 120A and the package body 110 . can be

The depth T1 and the width (not shown) of the second recess R2 may also adopt the characteristics of the depth T1 and the width W4 of the first recess R1 .

In an embodiment, a width W4 of the first recess R1 may be provided to be narrower than a distance between the first bonding portion 121 and the second bonding portion 122 of the first light emitting device 120A. . The width W4 of the first recess R1 with respect to the long axis length of the first light emitting device 120A may be 5% or more to 80% or less. When the width W4 of the first recess R is provided to be 5% or more of the long axis length of the first light emitting device 120A, a stable connection between the first light emitting device 120A and the package body 110 is provided. A fixing force can be secured, and when 80% or less is provided, the first resin part 131 is formed between the first recess R1 and the first and second openings TH1 and TH2 (refer to FIG. 2 ). The first and third frames 111 and 153 may be respectively disposed. Accordingly, the fixing force between the first and third frames 111 and 153 and the first light emitting device 120A between the first recess R1 and the first and second openings TH1 and TH2 can be secured. can

Through this, according to the embodiment, it is possible to provide a light emitting device package capable of improving bonding strength between the package body and the light emitting device, a manufacturing method thereof, and a light source device including the same.

Further, according to the embodiment, it is possible to provide a light emitting device package capable of improving luminous intensity, a method for manufacturing the same, and a light source device including the same.

(The first to third frames, the light emitting element, the opening of the frame, the conductive layer of the opening)

In addition, one of the technical problems of the embodiment is to provide a light emitting device package capable of solving the problem of electrical and physical reliability in a bonding region between an electrode of the package body and an electrode of the light emitting device, a manufacturing method thereof, and a light source device including the same.

In addition, one of the technical problems of the embodiment is to provide a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

Referring to FIG. 2 , the embodiment may include a first frame 111 , a second frame 112 , and a third frame 153 spaced apart from each other, but is not limited thereto, and may include four or more frames. have.

In an embodiment, the first frame 111 and the second frame 112 may stably provide the structural strength of the package body 110, and may be formed of a conductive material and electrically connected to the light emitting device. However, the present invention is not limited thereto.

In particular, in the embodiment, the third frame 153 is disposed between the first frame 111 and the second frame 112 and spaced apart from the first frame 111 and the second frame 112 . may include The third frame 153 may also stably provide the structural strength of the package body 110 , and may be formed of a conductive material and electrically connected to the light emitting device, but is not limited thereto.

For example, the first frame 111, the second frame 112, and the third frame 153 may include one material selected from the group consisting of Cu, Ag, Au, Pt, etc. or an alloy thereof. have.

At this time, power may be directly applied to the first frame 111 and the second frame 112 from electrodes of separate circuit boards, and the third frame 153 may not receive direct power. , may be referred to as an intermediate frame, a connection frame, or a bridge frame, and the plurality of light emitting devices are connected in series so that high power can be applied to realize high output light output (6V, 9V, 12V, etc.) , when power is directly applied to the third frame 153 that is an intermediate frame, a dimming function may also be implemented.

The embodiment may include a first light emitting device 120A disposed on the first resin part 131 and a second light emitting device 120B disposed on the second resin part 132 . The first and second light emitting devices 120A and 120B may be disposed in the cavity C provided by the package body 110 .

*

The first light emitting device 120A may include a first bonding unit 121 , a second bonding unit 122 , a light emitting structure 123 , and a substrate 124 . In addition, the second light emitting device 120B may include a third bonding portion 121b , a fourth bonding portion 122b , a light emitting structure 123 , and a substrate 124 .

2 , the first and second light emitting devices 120A and 120B may include the light emitting structure 123 disposed under the substrate 124 . The first and second bonding portions 121 and 122 and the third and fourth bonding portions 121b and 122b may be respectively disposed between the light emitting structure 123 and the package body 110 .

The light emitting structure 123 may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The first and third bonding portions 121 and 121b may be electrically connected to the first conductivity-type semiconductor layer. In addition, the second and fourth bonding portions 122 and 122b may be electrically connected to the second conductivity-type semiconductor layer.

The light emitting structure 123 may be formed of a compound semiconductor. The light emitting structure 123 may be formed of, for example, a group 2-6 or group 3-5 compound semiconductor. For example, the light emitting structure 123 may include at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). can be

The light emitting structure 123 may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

The first and second conductivity-type semiconductor layers may be implemented with at least one of a group 3-5 or group 2-6 compound semiconductor. The first and second conductivity type semiconductor layers are formed of, for example, a semiconductor material having a compositional formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) can be For example, the first and second conductivity type semiconductor layers may include at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. . The first conductivity-type semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductivity-type semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The active layer may be implemented with a compound semiconductor. The active layer may be embodied as, for example, at least one of a group 3-5 or group 2-6 compound semiconductor. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers that are alternately disposed, and In _x Al _y Ga _1-xy N (0≤x≤1, 0 It may be disposed as a semiconductor material having a compositional formula of ≤y≤1, 0≤x+y≤1). For example, the active layer may be selected from the group consisting of InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, InP/GaAs. It may include at least one.

The first bonding unit 121 and the second bonding unit 122 may be disposed to be spaced apart from each other on the lower surface of the first light emitting device 120A. In addition, the third bonding portion 121b and the fourth bonding portion 122b may be disposed to be spaced apart from each other on the lower surface of the second light emitting device 120B.

The first bonding part 121 may be disposed on the first frame 111 . The second bonding unit 122 and the third bonding unit 121b may be disposed on the third frame 153 . The fourth bonding part 122b may be disposed on the second frame 112 .

The first to fourth bonding portions 121, 122, 121b, and 122b are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au , Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO using one or more materials or alloys selected from the group consisting of a single layer or It may be formed in multiple layers.

* One of the technical problems of the embodiment is to provide a light emitting device package capable of solving the problem of electrical and physical reliability in a bonding area between an electrode of a package body and an electrode of a light emitting device, a manufacturing method thereof, and a light source device including the same.

In order to solve this problem, the light emitting device package 100 according to the embodiment may include an opening in each frame, and a conductive layer may be disposed in the opening, as shown in FIG. 2 .

For example, in the embodiment, the first frame 111 includes a first opening TH1, and the third frame 153 includes a second opening TH2 and a third opening TH3, The second frame 112 may include a fourth opening TH4, and first to fourth conductive layers 321, 322, 323, and 324 in the first to fourth openings TH1, TH2, TH3, and TH4, respectively. This can be arranged.

Through this, according to the embodiment, it is possible to provide a light emitting device package, a manufacturing method thereof, and a light source device including the same having excellent electrical and physical reliability in the bonding region between the electrode of the package body and the electrode of the light emitting device.

For example, according to the light emitting device package and the light emitting device manufacturing method according to the embodiment, a re-melting phenomenon is prevented from occurring in the bonding region of the light emitting device package in the process of re-bonding the light emitting device package to a substrate or the like. There are advantages to doing.

Specifically, when a conventional light emitting device package is mounted on a sub-mount or a circuit board, a high-temperature process such as reflow may be applied. In this case, in the reflow process, a re-melting phenomenon may occur in the bonding region between the lead frame provided in the light emitting device package and the electrode of the light emitting device, so that the stability of electrical connection and physical coupling may be weakened, and the light emitting device may change, so that optical and electrical characteristics and reliability of the light emitting device package may be deteriorated.

Accordingly, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first frame 111 includes a first opening TH1, the third frame 153 includes a second opening TH2, A third opening TH3 may be included, and the second frame 112 may include a fourth opening TH4, and the first to fourth openings TH1, TH2, TH3, and TH4 may include first openings, respectively. to fourth conductive layers 321 , 322 , 323 , and 324 may be disposed, and the first to fourth bonding portions 121 , 122 , 121b and 122b of the light emitting device according to the embodiment have first to fourth openings TH1 , TH2 , TH3 , The driving power may be provided through the first to fourth conductive layers 321 , 322 , 323 , and 324 disposed on the TH4 .

Accordingly, the first and second light emitting devices 120A and 120B not only contact the first to third frames 111 , 112 and 153 of the package body 110 , but also the first to fourth openings TH1 of each frame. The re-melting problem can be prevented by bonding in contact with the first to fourth conductive layers 321 , 322 , 323 , and 324 of TH2 , TH3 , and TH4 . In addition, in the embodiment, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of a general bonding material.

In addition, the adhesive material between the first and second light emitting devices 120A and 120B and the package body 110 and the adhesive material between the light emitting device package and the circuit board are different from each other so that re-melting is performed. It may also prevent problems.

Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main board or the like through a reflow process, a re-melting phenomenon does not occur, so electrical connection and physical bonding force are not deteriorated. There is no advantage.

In addition, according to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, the package body 110 does not need to be exposed to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature.

In addition, in the embodiment, the first resin part 131 disposed in the first recess R1 of the body 113 and the second resin part 132 disposed in the second recess R2 of the body 113 ), and the first and second resin parts 131 and 132 are disposed between the first and second light emitting devices 120A and 120B and the body 113, and the body 113 and the first The coupling force between the first light emitting device 120A and the second light emitting device 120B may be increased.

Accordingly, in the embodiment, the first and second light emitting devices 120A and 120B not only contact the first to third frames 111 , 112 and 153 of the package body 110 , but also first to fourth openings ( The first to fourth conductive layers 321, 322, 323, 324 of TH1, TH2, TH3, TH4 are bonded to each other, and the first and second resin parts 131 and 132 are formed by the first and second light emitting devices 120A, 120B) and there is a complex technical effect that can provide a stable fixing force between the package body (110).

Referring to FIG. 2 , the first opening TH1 may be provided in the first frame 111 . The first opening TH1 may be provided through the first frame 111 . The first opening TH1 may be provided through the upper and lower surfaces of the first frame 111 in the first direction.

The first opening TH1 may be disposed under the first bonding portion 121 of the first light emitting device 120A. The first opening TH1 may be provided to overlap the first bonding portion 121 of the first light emitting device 120A in a first direction from an upper surface to a lower surface of the first frame 111 .

The second and third openings TH2 and TH3 may be provided in the third frame 153 . The second and third openings TH2 and TH3 may be provided through the third frame 153 . The second and third openings TH2 and TH3 may be provided through the upper and lower surfaces of the third frame 112 in the first direction.

The second opening TH2 may be disposed under the second bonding portion 122 of the first light emitting device 120A. The third opening TH3 may be disposed under the third bonding portion 121a of the second light emitting device 120B.

The fourth opening TH4 may be provided in the second frame 112 . The fourth opening TH4 may be provided through the second frame 112 . The fourth opening TH4 may be provided through the upper and lower surfaces of the second frame 112 in the first direction.

The fourth opening TH4 may be disposed under the fourth bonding portion 122b of the second light emitting device 120B. The fourth opening TH4 may be provided to overlap the fourth bonding portion 122b of the second light emitting device 120B in a first direction from an upper surface to a lower surface of the second frame 112 .

*

The first opening TH1 and the second opening TH2 may be spaced apart from each other. The first opening TH1 and the second opening TH2 may be disposed to be spaced apart from each other under the lower surface of the first light emitting device 120A.

According to an embodiment, the width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width W1 of the first bonding portion 121 . In addition, the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the second bonding portion 122 .

Accordingly, the first bonding portion 121 of the first light emitting device 120A not only comes in contact with the first conductive layer 321 disposed in the first opening TH1 but also comes in contact with the first frame 111 . By doing so, it can be attached more firmly.

Similarly, the second bonding portion 122 of the first light emitting device 120A not only comes in contact with the second conductive layer 322 disposed in the second opening TH2 but also comes in contact with the third frame 153 . It can be attached more firmly.

In addition, the width W1 of the upper region of the first opening TH1 may be several tens of micrometers to several hundred micrometers. Also, the width W2 of the lower region of the first opening TH1 may be tens of micrometers to several hundreds of micrometers larger than the width W1 of the upper region of the first opening TH1. Through this, electrical reliability with the circuit board mounted on the lower part can be improved, and when the first conductive layer 321 is injected from the bottom to form the conductive layer, the process of the conductive layer is smooth and the conductive layer is uniformly formed. Reliability can be improved.

Also, the width of the upper region of the second opening TH2 may be several tens of micrometers to several hundred micrometers. In addition, the width of the lower region of the second opening TH2 may be greater than the width of the upper region of the second opening TH2 by several tens of micrometers to several hundreds of micrometers.

Also, the width W2 of the lower region of the first opening TH1 may be wider than the width W1 of the upper region of the first opening TH1 . The first opening TH1 may be provided with a constant width by a predetermined depth in the upper region, and may be provided in an inclined shape toward the lower region.

In addition, the width of the lower region of the second opening TH2 may be wider than the width of the upper region of the second opening TH2 . The second opening TH2 may be provided with a constant width by a predetermined depth in the upper area, and may be provided in an inclined shape toward the lower area.

For example, the first opening TH1 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region. Also, the second opening TH2 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region.

Also, according to an embodiment, both of the lower regions of the first and second openings TH1 and TH2 may include inclined surfaces (not shown). However, the present invention is not limited thereto, and the inclined surfaces between the upper and lower regions of the first and second openings TH1 and TH2 may have a plurality of inclined surfaces having different inclinations, and the inclined surfaces may be disposed with a curvature. .

In addition, the width W3 between the first opening TH1 and the second opening TH2 in the lower surface of the first frame 111 and the third frame 153 may be several hundreds of micrometers. . A width W3 between the first opening TH1 and the second opening TH2 in the lower surface area of the first frame 111 and the third frame 153 is, for example, 100 micrometers to 150 micrometers. can be provided as

The width W3 between the first opening TH1 and the second opening TH2 in the lower surface of the first frame 111 and the third frame 153 is the light emitting device package ( When 100) is later mounted on a circuit board, a sub-mount, etc., it may be selected to be provided over a certain distance in order to prevent an electrical short between the pads from occurring.

Referring to FIG. 2 , in the embodiment, the depth T2 of the first to fourth openings TH1 , TH2 , TH3 and TH4 corresponds to the thickness of the first to third frames 111 , 112 , and 153 . may be provided, and may be provided with a thickness capable of maintaining stable strength of the frame.

In addition, the depth T2 of the first to fourth openings TH1, TH2, TH3, and TH4 may be provided to correspond to the thickness of the body 113, and may be provided with a thickness capable of maintaining stable strength of the body. can

For example, the depth T2 of the first opening TH1 may be several hundreds of micrometers. A depth T2 of the first opening TH1 may be 180 micrometers to 500 micrometers. For example, the depth T2 of the first opening TH1 may be 500 micrometers.

For example, the thickness of (T2-T1) may be selected to be at least 100 micrometers or more. This is in consideration of the thickness of the injection process that can provide crack free (crack free) of the body (113).

According to an embodiment, the ratio (T2/T1) of the thickness T1 to the thickness T2 may be 2 to 10. For example, when the thickness of T2 is provided as 200 micrometers, the thickness of T1 may be provided as 20 micrometers to 100 micrometers. When the ratio (T2/T1) of the T1 thickness to the T2 thickness is 2 or more, mechanical strength can be secured so that cracks do not occur or break in the body 113 . In addition, when the ratio (T2/T1) of the T1 thickness to the T2 thickness is 10 or less, the amount of the resin part 130 disposed in the recess can be sufficiently disposed, and thus the first and second light emitting devices 120A , 120B) and the light emitting device package 110 may improve the fixing force.

Next, in the embodiment, first to fourth conductive layers 321, 322, 323 and 324 are respectively disposed in the first to fourth openings TH1, TH2, TH3, and TH4, and the first to fourth openings TH1, TH2, TH3 , TH4) may be vertically overlapped with the first to fourth bonding portions 121 , 122 , 121b and 122b.

Also, the first to fourth conductive layers 321 , 322 , 323 , and 324 may vertically overlap with the first to fourth bonding portions 121 , 122 , 121b and 122b , respectively.

The widths of the first to fourth conductive layers 321 , 322 , 323 , and 324 may be smaller than the widths of the first to fourth bonding portions 121 , 122 , 121b and 122b.

The first to fourth conductive layers 321 , 322 , 323 , and 324 may include one material selected from the group consisting of Ag, Au, Pt, or the like or an alloy thereof. However, the present invention is not limited thereto, and a material capable of securing a conductive function may be used as the first to fourth conductive layers 321 , 322 , 323 , and 324 .

For example, the first to fourth conductive layers 321 , 322 , 323 , and 324 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, or the like, and may be configured as a multi-layer made of different materials or a multi-layer or a single layer made of an alloy.

(5th resin part under/around the light emitting element)

The light emitting device package according to the embodiment includes a fifth resin part 135 under or around the first and second light emitting devices 120A and 120B, as shown in FIG. 2 , and the first and second light emitting devices ( 120A and 120B) and the first to third frames 111, 112, and 153 can improve adhesion, and the fifth resin part 135 is formed by the first and second light emitting devices 120A and 120B. When the light emitted from the light emitting device package 100 is reflected, the light extraction efficiency of the light emitting device package 100 may be improved.

For example, the first frame 111 includes a third upper recess R3 provided on its upper surface, and the second frame 112 includes a fourth upper recess R4 provided on its upper surface. Including, the third frame 153 may include third and fourth upper recesses R3 and R4 provided on the upper surface thereof.

The third upper recess R3 may be provided to be concave in a direction from an upper surface to a lower surface of the first frame 111 . The third upper recess R3 may be disposed to be spaced apart from the first opening TH1 in an outer direction of the package body 110 .

Also, according to the embodiment, the side surface of the third upper recess R3 may have an inclined surface and may have a curvature. Also, the third upper recess R3 may have a spherical shape, and a side surface thereof may have a circular shape.

The fourth upper recess R4 may be provided on an upper surface of the third frame 153 . The fourth upper recess R4 may be provided to be concave in a direction from an upper surface to a lower surface of the third frame 153 . Also, according to the embodiment, the side surface of the fourth upper recess R4 may have an inclined surface or a curvature. Also, the fourth upper recess R4 may have a spherical shape, and a side surface thereof may have a circular shape.

In addition, the light emitting device package 100 according to the embodiment may include a fifth resin part 135 in the third and fourth upper recesses R3 and R4 as shown in FIG. 2 . For example, the fifth resin part 135 includes at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. can do.

The fifth resin part 135 may be disposed between the first to third frames 111 , 112 , and 153 and the first and second light emitting devices 120A and 120B, and accordingly, the third The fifth resin part 135 filled in the upper recess R3 and the fourth upper recess R4 can effectively seal the periphery of the first to fourth bonding parts 121, 122, 121b, and 122b. there will be

In addition, the third upper recess R3 and the fourth upper recess R4 may be provided with the fifth resin part 135 under the first and second light emitting devices 120A and 120B. It can provide enough space. The third upper recess R3 and the fourth upper recess R4 may provide an appropriate space under the first light emitting device 120A in which a kind of underfill process may be performed.

Accordingly, the fifth resin part 135 filled in the third upper recess R3 and the fourth upper recess R4 is formed by the first to fourth bonding parts 121 , 122 , 121b and 122b. It is possible to effectively seal the perimeter.

In addition, in the embodiment, the first and second light emitting devices 120A through the first and second resin parts 131 and 132 disposed in the first and second recesses R1 and R2 of the body 113, 120B) and the package body 110 are fixed, and then the fifth resin part 135 is disposed in the third and fourth upper recesses R3 and R4, and the first to fourth bonding parts 121 and 122 are disposed. , 121b, 122b) has a technological effect that can seal the periphery.

In addition, in the embodiment, when the first and second recesses R3 and R4 are disposed to surround a partial region of the first to fourth bonding portions 121 , 122 , 121b and 122b, the first to second recesses R3 and R4 are disposed. 4 The conductive layers 121 , 122 , 123 , and 124 may block the extension of the first and second light emitting devices 120A and 120B from extending to the side of the first and second light emitting devices 120A and 120B, so that an electrical short circuit problem in the active layer may be more effectively improved.

Also, the fifth resin part 135 may be disposed under the first and second light emitting devices 120A and 120B to perform a sealing function. In addition, the fifth resin part 135 may improve adhesion between the first and second light emitting devices 120A and 120B and the first to third frames 111 , 112 , and 153 .

In addition, the fifth resin part 135 is made of white silicon or TiO ₂ to reflect the light emitted from the first and second light emitting devices 120A and 120B, or includes a material having reflective properties such as TiO 2 . In this case, the fifth resin part 135 reflects the light provided from the first and second light emitting devices 120A and 120B in the upper direction of the package body 110 to extract light from the light emitting device package 100 . efficiency can be improved.

In addition, when the fifth resin part 135 is disposed to fill the third and fourth upper recesses R3 and R4 , as described above, the third and fourth upper recesses R3 and R4 . is disposed to surround a partial area of the first and second light emitting devices 120A and 120B, so that reflectance may be increased in the area in which the third and fourth upper recesses R3 and R4 are disposed. Accordingly, the light extraction efficiency of the light emitting device package 100 may be improved.

<Molding part>

Next, the light emitting device package 100 according to the embodiment may include a molding unit 140 as shown in FIG. 2 . For reference, in FIG. 1 , the molding unit 140 is not shown so that the arrangement relationship between the first to third frames 111 , 112 , and 153 and the body 113 can be clearly shown.

The molding part 140 may be provided on the first and second light emitting devices 120A and 120B. The molding part 140 may be disposed on the first to third frames 111 , 112 , and 151 . The molding part 140 may be disposed in the cavity C provided by the package body 110 .

The molding part 140 may include an insulating material. In addition, the molding unit 140 may include a wavelength conversion unit that receives the light emitted from the first and second light emitting devices 120A and 120B and provides wavelength-converted light. For example, the molding unit 140 may be formed of at least one selected from a group including a phosphor, a quantum dot, and the like.

Next, FIG. 3 is a conceptual diagram in which the light emitting device package shown in FIG. 1 is disposed on the circuit board 410 .

The circuit board 410 may include a first pad 411 , a second pad 412 , and a substrate 415 . A power supply circuit for controlling driving of the first and second light emitting devices 120A and 120B may be provided on the substrate 415 . For example, the circuit board 410 may include a first wire 413 and a second wire 414 , and the first wire 413 may be electrically connected to the first pad 411 . and the second wiring 414 may be electrically connected to the second pad 412 .

The first pad 411 and the second pad 412 may include a conductive material. For example, the first pad 411 and the second pad 412 may be selected from among Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, and Al. It may include at least one selected material or an alloy thereof. The first pad 411 and the second pad 412 may be provided in a single layer or in multiple layers.

As shown in FIG. 3 , the light emitting device package 100 of the embodiment may be disposed on the circuit board 410 . The first pad 411 and the first bonding unit 121 may be electrically connected, and the second pad 412 and the fourth bonding unit 122 may be electrically connected.

1 and 3, the first light emitting device 120A and the second light emitting device 120B may be electrically connected in series, and through this, a high-output series method of a flip chip (6V, 9V, 12V, etc.) can be implemented, and the resin part functions as an adhesive, and a light emitting device package having excellent reliability while providing high output by a conductive layer disposed in the opening can be provided.

For example, power may be directly applied to the first frame 111 and the second frame 112 from electrodes of separate circuit boards, and power may not be directly applied to the third frame 153 . In addition, since the plurality of light emitting devices are connected in series, high power can be applied to realize high output optical output (6V, 9V, 12V, etc.). In addition, when power is directly applied to the third frame 153 , which is an intermediate frame, a dimming function may be implemented.

Meanwhile, in the light emitting device package described above, a flip chip light emitting device may be provided as an example. For example, the flip chip light emitting device may be provided as a transmissive flip chip light emitting device that emits light in six directions, or may be provided as a reflective flip chip light emitting device that emits light in five directions.

The reflective flip-chip light emitting device emitting light in the five-plane direction may have a structure in which a reflective layer is disposed in a direction close to the package package body 110 . For example, in the reflective flip-chip light emitting device, an insulating reflective layer (eg, Distributed Bragg Reflector, Omni Directional Reflector, etc.) and/or a conductive reflective layer (eg, Ag, Al, Ni, Au, etc.).

In addition, the flip-chip light emitting device emitting light in the six-sided direction has a first bonding portion electrically connected to the first conductivity-type semiconductor layer and a second bonding portion electrically connected to the second conductivity-type semiconductor layer, It may be provided as a general horizontal light emitting device in which light is emitted between the first bonding unit and the second bonding unit.

In addition, the flip-chip light emitting device emitting light in the six-plane direction is a transmissive flip-chip light emitting device including both a reflective region in which a reflective layer is disposed between the first and second bonding portions and a transmissive region through which light is emitted. can be provided.

Here, the transmissive flip-chip light emitting device refers to a device that emits light to the upper surface, four side surfaces, and six surfaces of the lower surface. In addition, the reflective flip-chip light emitting device refers to a device that emits light to five surfaces of the upper surface and four side surfaces.

On the other hand, the light emitting device package 100 according to the embodiment described above may be supplied by being mounted on a sub-mount or a circuit board.

However, when the conventional light emitting device package is mounted on a sub-mount or a circuit board, a high-temperature process such as reflow may be applied. In this case, in the reflow process, a re-melting phenomenon occurs in the bonding region between the light emitting device and the lead frame provided in the light emitting device package, so that the stability of electrical connection and physical bonding may be weakened.

However, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first to bonding portions of the light emitting device according to the embodiment may receive driving power through the conductive layer disposed in the opening. In addition, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than that of a general bonding material.

Therefore, in the light emitting device package 100 according to the embodiment, even when bonding to a main board or the like through a reflow process, a re-melting phenomenon does not occur, so electrical connection and physical bonding force are not deteriorated. There is no advantage.

In addition, according to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, the package body 110 does not need to be exposed to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature.

<Second embodiment>

4 is a plan view of the light emitting device package 102 according to the second embodiment.

One of the technical problems of the embodiment is to provide a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

The second embodiment may adopt the technical features of the first embodiment. For example, the second embodiment may include the package body 110 and a plurality of light emitting devices disposed on the package body 110 to realize high-output light output. For example, the embodiment may include, but is not limited to, the first light emitting device 120A and the second light emitting device 120B, and three or more light emitting devices may be provided to realize high output light output.

The package body 110 may include a plurality of frames. For example, the package body 110 may include a first frame 111A, a second frame 112A, and a third frame 153 spaced apart from each other.

At this time, power may be directly applied to the first frame 111A and the second frame 112A from electrodes of separate circuit boards, and the third frame 153 may not receive direct power, , since the plurality of light emitting devices are connected in series, high power can be applied to realize high output light output, and when power is directly applied to the third frame 153 , which is an intermediate frame, a dimming function can also be implemented can

In addition, the package body 110 may include a body 113 serving as a support part, and includes a resin part 130 in an upper region overlapping the first light emitting device 120A and the second light emitting device 120B. can do. For example, in the embodiment, the resin part 130, for example, the first resin part 131, the second resin part ( 132), respectively, to improve bonding strength between the package body and the light emitting device.

In addition, the first resin part 131 and the second resin part 132 may extend to the outside of the first light emitting device 120A and the second light emitting device 120B, respectively, and in this case, when bonding is performed It is possible to improve electrical reliability by preventing an electrical short circuit by blocking the lateral expansion of the paste.

Also, the package body 110 may include a fifth resin part 135 around the first and second light emitting devices 120A and 120B. For example, the fifth resin part 135 may be disposed below and/or on side surfaces of the first and second light emitting devices 120A and 120B to perform a sealing function. In addition, the fifth resin part 135 may improve adhesion between the first and second light emitting devices 120A and 120B and the first to third frames 111A, 112A, and 153 .

* As shown in FIG. 4 , in the second embodiment, the first frame 111A and the second frame 112A may have a smaller size than the third frame 153 . Through this, according to the embodiment, it is possible to provide a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

For example, the first frame 111A and the second frame 112A may be disposed to overlap with each other, and the third frame 153 may be disposed in the longitudinal direction of the first and second light emitting devices 120B. The first light emitting device 120A is disposed on the first frame 111A and the third frame 153 to be disposed perpendicular to the By disposing on the third frame 153 , it is possible to provide a light emitting device package that provides high output and has excellent reliability and has a compact semiconductor package size.

The first light emitting device 120A and the second light emitting device 120B are disposed to overlap the upper and lower sides as a whole, so that the area occupied by the light emitting devices 120A and 120B and the light emitting device package body 110 is very compact and high output. A light emitting device package can be implemented. Accordingly, according to the embodiment, it is possible to provide a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

In addition, according to the embodiment, a light emitting device package including each of the first resin part 131 and the second resin part 132 to improve bonding force between the package body and the light emitting device, a manufacturing method thereof, and a light source device including the same can provide

Further, according to the embodiment, it is possible to provide a light emitting device package, a method for manufacturing the same, and a light source device including the same, having excellent electrical and physical reliability in the bonding region between the electrode of the package body and the electrode of the light emitting device.

In addition, according to the embodiment, it is possible to provide a light emitting device package capable of improving luminous intensity by a resin part, a manufacturing method thereof, and a light source device including the same.

In addition, according to the embodiment, there is a complex effect of providing a light emitting device package capable of reducing manufacturing cost and improving manufacturing yield through improvement of process efficiency and structural change, a manufacturing method thereof, and a light source device including the same.

<Third embodiment>

5 is a plan view of the light emitting device package 103 according to the third embodiment.

One of the technical problems of the embodiment is to provide a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

The third embodiment may employ the technical features of the first and second embodiments.

For example, the third embodiment may include the package body 110 and a plurality of light emitting devices disposed on the package body 110 to realize high output light output. For example, the embodiment may include, but is not limited to, the first light emitting device 120A, the second light emitting device 120B, and the third light emitting device 120C, and includes four or more light emitting devices to provide high-output light. You can also implement an output.

The package body 110 may include a plurality of frames. For example, the package body 110 may include a first frame 111A, a second frame 112A, a third frame 153 and a fourth frame 154 spaced apart from each other, but is not limited thereto. It may also include 5 or more frames.

In this case, power may be directly applied to the first frame 111A and the second frame 112A from electrodes of separate circuit boards, and the third frame 153 and the fourth frame 154 may be directly connected to each other. Power may not be applied, and since the plurality of light emitting devices are connected in series, high power can be applied to realize high output light output, and the third frame 153 or the fourth frame 154 as an intermediate frame. When power is directly applied to the , a dimming function can also be implemented.

In addition, the package body 110 may include a body 113 functioning as a support part. Accordingly, the first frame 111A spaced apart from each other, the second frame 112A, the third frame 153 and the fourth frame 154 of the central lower part and the right part may be supported by the body 113 . . The body 113 also includes first to third resin parts 131, 132, and 133 in upper regions overlapping the first light emitting device 120A, the second light emitting device 120B, and the third light emitting device 120C, respectively. ), including the bonding strength between the package body and the light emitting device can be improved.

In addition, the first to third resin parts 131 , 132 , and 133 may extend to the outside of the first light emitting device 120A, the second light emitting device 120B, and the third light emitting device 120C, respectively, and in this case, bonding proceeds It is possible to improve electrical reliability by preventing an electrical short circuit by blocking the lateral expansion of the paste, etc.

Also, the package body 110 may include a fifth resin part 135 around the first, second, and third light emitting devices 120A, 120B, and 120C. For example, the fifth resin part 135 may be disposed below and/or on side surfaces of the first, second, and third light emitting devices 120A, 120B, and 120C to perform a sealing function. In addition, the fifth resin part 135 may improve the adhesion between the first, second, and third light emitting devices 120A, 120B, and 120C and the first to fourth frames 111A, 112A, 153 and 154. have.

In the third embodiment, between the third frame 153 and the second frame 112A, a fourth frame 154 disposed to be spaced apart from the third frame 153 and the second frame 112A may include more.

The first light emitting device 120A may be disposed on a first frame 111A and a third frame 153 , and the second light emitting device 120B includes a second frame 112A and a fourth frame 154 . ), and the third light emitting device 120C may be disposed on the third frame 153 and the fourth frame 154 .

5 , in the third embodiment, the first frame 111A and the second frame 112A may have a smaller size than the third frame 153 and the fourth frame 154 . Through this, according to the embodiment, it is possible to provide a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

For example, the first frame 111A and the second frame 112A may be disposed adjacent to each other laterally, and the third frame 153 may be formed between the first frame 111A and the second frame 112A. ) and may be arranged to overlap between the top and bottom.

In addition, since the fourth frame 154 is disposed perpendicularly to the longitudinal direction of the second and third light emitting devices 120B and 120C, a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size can provide

The second light emitting device 120B and the third light emitting device 120C are disposed to overlap the upper and lower sides as a whole so that the area occupied by the light emitting devices 120A, 120B, and 120C and the light emitting device package body 110 is very compact. It is possible to implement a light emitting device package of high output while still doing so. Accordingly, according to the embodiment, it is possible to provide a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

In addition, according to the embodiment, the first resin part 131, the second resin part 132, the third resin part 133, each including a light emitting device package capable of improving the bonding force between the package body and the light emitting device, A method for manufacturing the same and a light source device including the same can be provided.

Further, according to the embodiment, it is possible to provide a light emitting device package, a method for manufacturing the same, and a light source device including the same, having excellent electrical and physical reliability in the bonding region between the electrode of the package body and the electrode of the light emitting device.

In addition, according to the embodiment, it is possible to provide a light emitting device package capable of improving luminous intensity by a resin part, a manufacturing method thereof, and a light source device including the same.

In addition, according to the embodiment, there is a complex effect of providing a light emitting device package capable of reducing manufacturing cost and improving manufacturing yield through improvement of process efficiency and structural change, a manufacturing method thereof, and a light source device including the same.

<Fourth embodiment>

6 is a plan view of the light emitting device package 104 according to the fourth embodiment.

One of the technical problems of the embodiment is to provide a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

The fourth embodiment may adopt the technical features of the first to third embodiments.

For example, the fourth embodiment may include the package body 110 and a plurality of light emitting devices disposed on the package body 110 to realize high output light output. For example, the embodiment may include, but is not limited to, the first light emitting device 120A, the second light emitting device 120B, and the third light emitting device 120C, and includes four or more light emitting devices to provide high-output light. You can also implement an output.

The package body 110 may include a plurality of frames. For example, the package body 110 may include a first frame 111A, a second frame 112A, a third frame 153 and a fourth frame 154 spaced apart from each other, but is not limited thereto. It may also include 5 or more frames.

In this case, power may be directly applied to the first frame 111A and the second frame 112A from electrodes of separate circuit boards, and the third frame 153 and the fourth frame 154 may be directly connected to each other. Power may not be applied, and since the plurality of light emitting devices are connected in series, high power can be applied to realize high output light output, and the third frame 153 or the fourth frame 154 as an intermediate frame. When power is directly applied to the , a dimming function can also be implemented.

Also, the package body 110 may include a fifth resin part 135 around the first, second, and third light emitting devices 120A, 120B, and 120C. For example, the fifth resin part 135 may be disposed below and/or on side surfaces of the first, second, and third light emitting devices 120A, 120B, and 120C to perform a sealing function. In addition, the fifth resin part 135 may improve the adhesion between the first, second, and third light emitting devices 120A, 120B, and 120C and the first to fourth frames 111A, 112A, 153 and 154. have.

In addition, the package body 110 may include a body 113 serving as a support part, and an upper region overlapping the first light emitting device 120A, the second light emitting device 120B, and the third light emitting device 120C. Each of the first to third resin parts 131 , 132 , and 133 may be included to improve bonding force between the package body and the light emitting device.

In addition, the first to third resin parts 131 , 132 , and 133 may extend to the outside of the first light emitting device 120A, the second light emitting device 120B, and the third light emitting device 120C, respectively, in this case It is possible to improve electrical reliability by preventing an electrical short circuit by blocking the lateral expansion of the paste during bonding.

In the third embodiment, between the third frame 153 and the second frame 112A, a fourth frame 154 disposed to be spaced apart from the third frame 153 and the second frame 112A may include more.

The first light emitting device 120A may be disposed on a first frame 111A and a third frame 153 , and the second light emitting device 120B includes a second frame 112A and a fourth frame 154 . ), and the third light emitting device 120C may be disposed on the third frame 153 and the fourth frame 154 .

5 , in the third embodiment, the first frame 111A and the second frame 112A may have a smaller size than the third frame 153 and the fourth frame 154 . Through this, according to the embodiment, it is possible to provide a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

For example, the first frame 111A and the second frame 112A may be disposed to be spaced apart, and the third frame 153 and the fourth frame 154 may be disposed therebetween.

For example, the third frame 153 is disposed in a direction perpendicular to the longitudinal direction of the first light emitting device 120A, and the fourth frame 154 is partially overlapped with the third frame 153 vertically. It may be disposed in a direction perpendicular to the longitudinal direction of the first light emitting device 120A and overlap the second frame 112A vertically.

Accordingly, the arrangement of the light emitting device and the arrangement of the frame become dense, so that it is possible to provide a light emitting device package that provides high output and has excellent reliability and has a compact semiconductor package size.

In particular, since the first, second, and third light emitting devices 120A, 120B, and 120C are arranged to overlap with the side as a whole, the area occupied by the light emitting devices 120A, 120B, and 120C and the light emitting device package body 110 is very large. It is possible to implement a light emitting device package of high output while making it compact. Accordingly, according to the embodiment, it is possible to provide a light emitting device package that provides high output and excellent reliability and has a compact semiconductor package size, a manufacturing method thereof, and a light source device including the same.

Further, according to the embodiment, it is possible to provide a light emitting device package, a method for manufacturing the same, and a light source device including the same, having excellent electrical and physical reliability in the bonding region between the electrode of the package body and the electrode of the light emitting device.

In addition, according to the embodiment, it is possible to provide a light emitting device package capable of improving luminous intensity by a resin part, a manufacturing method thereof, and a light source device including the same.

In addition, according to the embodiment, the first resin part 131, the second resin part 132, the third resin part 133, each including a light emitting device package capable of improving the bonding force between the package body and the light emitting device, A method for manufacturing the same and a light source device including the same can be provided.

In addition, according to the embodiment, there is a complex effect of providing a light emitting device package capable of reducing manufacturing cost and improving manufacturing yield through improvement of process efficiency and structural change, a manufacturing method thereof, and a light source device including the same.

<Example of flip chip light emitting device applied to light emitting device package>

Then, an example of the flip-chip light emitting device applied to the light emitting device package according to the embodiment will be described below.

First, a light emitting device according to an embodiment will be described with reference to FIGS. 7 and 8 .

7 is a plan view illustrating a light emitting device according to an embodiment, and FIG. 8 is a cross-sectional view taken along line A-A of the light emitting device shown in FIG. 7 .

Meanwhile, for better understanding, in FIG. 7 , the first sub-electrode is disposed under the first bonding unit 1171 and the second bonding unit 1172 , but is electrically connected to the first bonding unit 1171 . 1141 and the second sub-electrode 1142 electrically connected to the second bonding part 1172 are shown to be visible.

The light emitting device 1100 according to the embodiment may include a semiconductor structure 1110 disposed on a substrate 1105 .

The substrate 1105 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 1105 may be provided as a patterned sapphire substrate (PSS) in which an uneven pattern is formed on an upper surface of the substrate 1105 .

The semiconductor structure 1110 may include a first conductivity type semiconductor layer 1111 , an active layer 1112 , and a second conductivity type semiconductor layer 1113 . The active layer 1112 may be disposed between the first conductivity-type semiconductor layer 1111 and the second conductivity-type semiconductor layer 1113 . For example, the active layer 1112 may be disposed on the first conductivity-type semiconductor layer 1111 , and the second conductivity-type semiconductor layer 1113 may be disposed on the active layer 1112 .

In an embodiment, the first conductivity-type semiconductor layer 1111 may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 1113 may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity-type semiconductor layer 1111 may be provided as a p-type semiconductor layer, and the second conductivity-type semiconductor layer 1113 may be provided as an n-type semiconductor layer.

Hereinafter, for convenience of description, it will be described based on a case in which the first conductivity-type semiconductor layer 1111 is provided as an n-type semiconductor layer and the second conductivity-type semiconductor layer 1113 is provided as a p-type semiconductor layer. .

The light emitting device 1100 according to the embodiment may include an ohmic contact layer 1130 as shown in FIG. 8 . The ohmic contact layer 1130 may improve current diffusion to increase light output. The arrangement position and shape of the ohmic contact layer 1130 will be further described while explaining the method of manufacturing the light emitting device according to the embodiment.

For example, the ohmic contact layer 1130 may include at least one selected from the group consisting of a metal, a metal oxide, and a metal nitride. The ohmic contact layer 1130 may include a light-transmitting material.

The ohmic contact layer 1130 may be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), or IGZO ( indium gallium zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni It may include at least one selected from the group including /IrOx/Au/ITO, Pt, Ni, Au, Rh, and Pd.

The light emitting device 1100 according to the embodiment may include a reflective layer 1160 as shown in FIGS. 7 and 8 . The reflective layer 1160 may include a first reflective layer 1161 , a second reflective layer 1162 , and a third reflective layer 1163 . The reflective layer 1160 may be disposed on the ohmic contact layer 1130 .

The second reflective layer 1162 may include a first opening h1 exposing the ohmic contact layer 1130 . The second reflective layer 1162 may include a plurality of first openings h1 disposed on the ohmic contact layer 1130 .

The first reflective layer 1161 may include a plurality of second openings h2 exposing an upper surface of the first conductivity-type semiconductor layer 1111 .

The third reflective layer 1163 may be disposed between the first reflective layer 1161 and the second reflective layer 1162 . For example, the third reflective layer 1163 may be connected to the first reflective layer 1161 . Also, the third reflective layer 1163 may be connected to the second reflective layer 1162 . The third reflective layer 1163 may be disposed in direct physical contact with the first reflective layer 1161 and the second reflective layer 1162 .

For example, the width W5 of the third reflective layer 1163 may be smaller than the width W4 of the first recess R described with reference to FIG. 2 .

Accordingly, light emitted between the first reflective layer 1161 and the third reflective layer 1163 may be incident on the first resin part 131 disposed in the first recess R region. Light emitted in the downward direction of the light emitting device may be diffused by the first resin part 131 , and light extraction efficiency may be improved.

In addition, light emitted between the second reflective layer 1162 and the third reflective layer 1163 may be incident on the first resin part 131 disposed in the first recess R1 region. Light emitted in the downward direction of the light emitting device may be diffused by the first resin part 131 , and light extraction efficiency may be improved.

The reflective layer 1160 according to the embodiment may contact the second conductivity-type semiconductor layer 1113 through a plurality of contact holes provided in the ohmic contact layer 1130 . The reflective layer 1160 may physically contact the upper surface of the second conductivity-type semiconductor layer 1113 through a plurality of contact holes provided in the ohmic contact layer 1130 .

The shape of the ohmic contact layer 1130 and the shape of the reflective layer 1160 according to the embodiment will be further described while explaining the method of manufacturing the light emitting device according to the embodiment.

The reflective layer 1160 may be provided as an insulating reflective layer. For example, the reflective layer 1160 may be provided as a distributed Bragg reflector (DBR) layer. In addition, the reflective layer 1160 may be provided as an Omni Directional Reflector (ODR) layer. In addition, the reflective layer 1160 may be provided by stacking a DBR layer and an ODR layer.

The light emitting device 1100 according to the embodiment may include a first sub-electrode 1141 and a second sub-electrode 1142 as shown in FIGS. 7 and 8 .

The first sub-electrode 1141 may be electrically connected to the first conductivity-type semiconductor layer 1111 inside the second opening h2 . The first sub-electrode 1141 may be disposed on the first conductivity-type semiconductor layer 1111 . For example, in the light emitting device 1100 according to the embodiment, the first sub-electrode 1141 passes through the second conductivity-type semiconductor layer 1113 and the active layer 1112 to form a first conductivity-type semiconductor layer ( It may be disposed on the upper surface of the first conductivity-type semiconductor layer 1111 in a recess disposed up to a partial region of 1111 .

The first sub-electrode 1141 may be electrically connected to the upper surface of the first conductivity-type semiconductor layer 1111 through the second opening h2 provided in the first reflective layer 1161 . The second opening h2 and the recess may vertically overlap. For example, as shown in FIGS. 7 and 8 , the first sub-electrode 1141 may include the first sub-electrode 1141 in the plurality of recess regions. It may be in direct contact with the upper surface of the first conductivity type semiconductor layer 1111 .

The second sub-electrode 1142 may be electrically connected to the second conductivity-type semiconductor layer 1113 . The second sub-electrode 1142 may be disposed on the second conductivity-type semiconductor layer 1113 . In an embodiment, the ohmic contact layer 1130 may be disposed between the second sub-electrode 1142 and the second conductivity-type semiconductor layer 1113 .

The second sub-electrode 1142 may be electrically connected to the second conductivity-type semiconductor layer 1113 through the first opening h1 provided in the second reflective layer 1162 . For example, as shown in FIGS. 7 and 8 , the second sub-electrode 1142 is electrically connected to the second conductivity-type semiconductor layer 1113 through the ohmic contact layer 1130 in the plurality of P regions. can be connected to

As shown in FIGS. 7 and 8, the second sub-electrode 1142 is connected to the ohmic contact layer ( 1130) may be in direct contact with the upper surface.

According to an embodiment, as shown in FIGS. 7 and 8 , the first sub-electrode 1141 and the second sub-electrode 1142 may have polarities and may be disposed to be spaced apart from each other.

The first sub-electrode 1141 may be provided in a plurality of line shapes, for example. In addition, the second sub-electrode 1142 may be provided in a plurality of line shapes, for example. The first sub-electrode 1141 may be disposed between a plurality of adjacent second sub-electrodes 1142 . The second sub-electrode 1142 may be disposed between a plurality of adjacent first sub-electrodes 1141 .

When the first sub-electrode 1141 and the second sub-electrode 1142 have different polarities, different numbers of electrodes may be disposed. For example, when the first sub-electrode 1141 is an n-electrode and the second sub-electrode 1142 is a p-electrode, the number of the second sub-electrodes 1142 is greater than that of the first sub-electrode 1141 . may be more When the electrical conductivity and/or resistance of the second conductivity type semiconductor layer 1113 and the first conductivity type semiconductor layer 1111 are different from each other, the first sub-electrode 1141 and the second sub-electrode 1142 Thus, electrons and holes injected into the semiconductor structure 1110 may be balanced, and thus, optical characteristics of the light emitting device may be improved.

The first sub-electrode 1141 and the second sub-electrode 1142 may be formed in a single-layer or multi-layer structure. For example, the first sub-electrode 1141 and the second sub-electrode 1142 may be ohmic electrodes. For example, the first sub-electrode 1141 and the second sub-electrode 1142 are ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag , at least one of Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy of two or more of these materials.

The light emitting device 1100 according to the embodiment may include a protective layer 1150 as shown in FIGS. 7 and 8 .

The protective layer 1150 may include a plurality of third openings h3 exposing the second sub-electrode 1142 . The plurality of third openings h3 may be disposed to correspond to the plurality of PB regions provided in the second sub-electrode 1142 .

Also, the protective layer 1150 may include a plurality of fourth openings h4 exposing the first sub-electrode 1141 . The plurality of fourth openings h4 may be disposed to correspond to the plurality of NB regions provided in the first sub-electrode 1141 .

The protective layer 1150 may be disposed on the reflective layer 1160 . The passivation layer 1150 may be disposed on the first reflective layer 1161 , the second reflective layer 1162 , and the third reflective layer 1163 .

For example, the protective layer 1150 may be made of an insulating material. For example, the protective layer 1150 is Si _x O _y , SiO _x N _y , It may be formed of at least one material selected from the group including Si _x N _y and Al _x O _y .

The light emitting device 1100 according to the embodiment may include a first bonding unit 1171 and a second bonding unit 1172 disposed on the protective layer 1150, as shown in FIGS. 7 and 8 . have.

The first bonding part 1171 may be disposed on the first reflective layer 1161 . Also, the second bonding part 1172 may be disposed on the second reflective layer 1162 . The second bonding unit 1172 may be disposed to be spaced apart from the first bonding unit 1171 .

The first bonding part 1171 may contact the upper surface of the first sub-electrode 1141 through the plurality of fourth openings h4 provided in the passivation layer 1150 in the plurality of NB regions. The plurality of NB regions may be vertically displaced from the second opening h2 . When the plurality of NB regions and the second openings h2 are vertically shifted from each other, the current injected into the first bonding portion 1171 may be evenly spread in the horizontal direction of the first sub-electrode 1141, Accordingly, currents may be uniformly injected in the plurality of NB regions.

In addition, the second bonding part 1172 may be in contact with the upper surface of the second sub-electrode 1142 through the third openings h3 provided in the protective layer 1150 in the plurality of PB regions. have. When the plurality of PB regions and the plurality of first openings h1 are not vertically overlapped, the current injected into the second bonding part 1172 is evenly spread in the horizontal direction of the second sub-electrode 1142 . Therefore, currents may be uniformly injected in the plurality of PB regions.

As described above, according to the light emitting device 1100 according to the embodiment, the first bonding portion 1171 and the first sub-electrode 1141 may contact each other in the plurality of fourth openings h4 regions. Also, the second bonding part 1172 and the second sub-electrode 1142 may contact each other in a plurality of regions. Accordingly, according to the embodiment, since power may be supplied through a plurality of regions, there is an advantage that a current dispersion effect may occur and an operating voltage may be reduced according to an increase in the contact area and dispersion of the contact region.

In addition, according to the light emitting device 1100 according to the embodiment, as shown in FIG. 8 , the first reflective layer 1161 is disposed under the first sub-electrode 1141 , and the second reflective layer 1162 . This second sub-electrode 1142 is disposed below. Accordingly, the first reflective layer 1161 and the second reflective layer 1162 reflect light emitted from the active layer 1112 of the semiconductor structure 1110 to form a first sub-electrode 1141 and a second sub-electrode ( 1142), the light absorption may be minimized to improve the luminous intensity (Po).

For example, the first reflective layer 1161 and the second reflective layer 1162 are made of an insulating material, and a material having high reflectivity, for example, a DBR structure, is used for reflection of light emitted from the active layer 1112 . can be achieved

The first reflective layer 1161 and the second reflective layer 1162 may form a DBR structure in which materials having different refractive indices are repeatedly disposed. For example, the first reflective layer 1161 and the second reflective layer 1162 may be disposed in a single-layer or stacked structure including at least one of TiO ₂ , SiO ₂ , Ta ₂ O ₅ , and HfO ₂ .

In addition, according to another embodiment, without being limited thereto, the first reflective layer 1161 and the second reflective layer 1162 emit light from the active layer 1112 according to the wavelength of light emitted from the active layer 1112 . It can be freely selected to adjust the reflectivity to light.

Also, according to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided as ODR layers. According to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided in a hybrid form in which a DBR layer and an ODR layer are stacked.

When the light emitting device according to the embodiment is mounted in a flip-chip bonding method and implemented as a light emitting device package, the light provided from the semiconductor structure 1110 may be emitted through the substrate 1105 . Light emitted from the semiconductor structure 1110 may be reflected by the first reflective layer 1161 and the second reflective layer 1162 to be emitted toward the substrate 1105 .

In addition, light emitted from the semiconductor structure 1110 may also be emitted in a lateral direction of the semiconductor structure 1110 . In addition, the light emitted from the semiconductor structure 1110 may include the first bonding unit 1171 and the second bonding unit 1171 and the second bonding unit 1172 among the surfaces on which the first bonding unit 1171 and the second bonding unit 1172 are disposed. The portion 1172 may be discharged to the outside through an area where the portion 1172 is not provided.

Specifically, the light emitted from the semiconductor structure 1110 includes the first reflective layer 1161 and the second reflective layer among the surfaces on which the first bonding part 1171 and the second bonding part 1172 are disposed. In 1162 , the third reflective layer 1163 may be emitted to the outside through a region not provided.

Accordingly, the light emitting device 1100 according to the embodiment can emit light in six directions surrounding the semiconductor structure 1110 , and the luminous intensity can be remarkably improved.

On the other hand, according to the light emitting device according to the embodiment, when viewed from the upper direction of the light emitting device 1100, the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 is the first bonding The portion 1171 and the second bonding portion 1172 may be provided equal to or smaller than 60% of the total area of the upper surface of the light emitting device 1100 on which the second bonding portion 1172 is disposed.

For example, the total area of the upper surface of the light emitting device 1100 may correspond to an area defined by the horizontal and vertical lengths of the lower surface of the first conductivity-type semiconductor layer 1111 of the semiconductor structure 1110 . . Also, the total area of the upper surface of the light emitting device 1100 may correspond to the area of the upper surface or the lower surface of the substrate 1105 .

In this way, by providing the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 equal to or smaller than 60% of the total area of the light emitting device 1100, the first bonding The amount of light emitted to the surface on which the part 1171 and the second bonding part 1172 are disposed can be increased. Accordingly, according to the embodiment, since the amount of light emitted in the direction of six surfaces of the light emitting device 1100 is increased, the light extraction efficiency is improved and the luminous intensity (Po) can be increased.

In addition, when viewed from the upper direction of the light emitting device 1100 , the sum of the area of the first bonding part 1171 and the area of the second bonding part 1172 is 30 of the total area of the light emitting device 1100 . It may be provided equal to or greater than %.

In this way, the sum of the areas of the first bonding unit 1171 and the second bonding unit 1172 is equal to or larger than 30% of the total area of the light emitting device 1100, so that the first bonding unit 1172 Stable mounting may be performed through the unit 1171 and the second bonding unit 1172 , and electrical characteristics of the light emitting device 1100 may be secured.

In the light emitting device 1100 according to the embodiment, in consideration of light extraction efficiency and securing stability of bonding, the sum of the areas of the first bonding unit 1171 and the second bonding unit 1172 is the light emitting device 1100 . ) of 30% or more of the total area and may be selected as 60% or less.

That is, when the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 is 30% or more to 100% or less of the total area of the light emitting device 1100, the Stable mounting can be performed by securing electrical characteristics and securing bonding force to be mounted on the light emitting device package.

In addition, when the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 is greater than 0% to 60% or less of the total area of the light emitting device 1100 , the first bonding portion 1171 ) and the amount of light emitted to the surface on which the second bonding part 1172 is disposed increases, so that the light extraction efficiency of the light emitting device 1100 may be improved, and the luminous intensity Po may be increased.

In the embodiment, the area of the first bonding unit 1171 and the second bonding unit 1172 is to secure the electrical characteristics of the light emitting device 1100 and the bonding force to be mounted on the light emitting device package, and to increase the luminous intensity. A sum of 30% or more to 60% or less of the total area of the light emitting device 1100 was selected.

Also, according to the light emitting device 1100 according to the embodiment, the third reflective layer 1163 may be disposed between the first bonding unit 1171 and the second bonding unit 1172 . For example, the length W5 of the third reflective layer 1163 along the long axis direction of the light emitting device 1100 corresponds to the interval between the first bonding unit 1171 and the second bonding unit 1172 . can be placed. In addition, the area of the third reflective layer 1163 may be, for example, 10% or more and 25% or less of the entire upper surface of the light emitting device 1100 .

When the area of the third reflective layer 1163 is 10% or more of the entire upper surface of the light emitting device 1100, discoloration of the package body disposed under the light emitting device or occurrence of cracks can be prevented, and 25% In the following case, it is advantageous to secure light extraction efficiency to emit light on six surfaces of the light emitting device.

In addition, in another embodiment, the area of the third reflective layer 1163 is arranged to be more than 0% to less than 10% of the entire upper surface of the light emitting device 1100 in order to secure a greater light extraction efficiency without being limited thereto. In order to prevent discoloration or cracking in the package body, the area of the third reflective layer 1163 may be disposed to be greater than 25% to less than 100% of the entire upper surface of the light emitting device 1100. .

In addition, a second region provided between the first bonding portion 1171 or the second bonding portion 1172 adjacent to a side surface disposed in the long axis direction of the light emitting device 1100 is generated in the semiconductor structure 1110 . Light can be transmitted through and emitted.

In addition, light generated by the light emitting structure is transmitted to a third area provided between the first bonding unit 1171 or the second bonding unit 1172 adjacent to the side surface disposed in the minor axis direction of the light emitting device 1100 . It can be permeated and released.

According to an embodiment, the size of the first reflective layer 1161 may be several micrometers larger than the size of the first bonding part 1171 . For example, the area of the first reflective layer 1161 may be large enough to completely cover the area of the first bonding part 1171 . In consideration of the process error, the length of one side of the first reflective layer 1161 may be, for example, 4 micrometers to 10 micrometers greater than the length of one side of the first bonding part 1171 .

In addition, the size of the second reflective layer 1162 may be several micrometers larger than the size of the second bonding part 1172 . For example, the area of the second reflective layer 1162 may be large enough to completely cover the area of the second bonding part 1172 . In consideration of the process error, the length of one side of the second reflective layer 1162 may be greater than the length of one side of the second bonding part 1172, for example, by about 4 micrometers to 10 micrometers.

According to an embodiment, light emitted from the semiconductor structure 1110 by the first reflective layer 1161 and the second reflective layer 1162 is emitted from the first bonding part 1171 and the second bonding part 1172 . ) can be reflected without being incident on it. Accordingly, according to the embodiment, it is possible to minimize loss of light generated and emitted from the semiconductor structure 1110 by being incident on the first bonding unit 1171 and the second bonding unit 1172 .

In addition, according to the light emitting device 1100 according to the embodiment, since the third reflective layer 1163 is disposed between the first bonding part 1171 and the second bonding part 1172, the first bonding part ( 1171) and the amount of light emitted between the second bonding unit 1172 can be adjusted.

As described above, the light emitting device 1100 according to the embodiment may be provided in the form of a light emitting device package by mounting, for example, by a flip chip bonding method. At this time, when the package body on which the light emitting device 1100 is mounted is provided with resin or the like, the package body is discolored by strong light of a short wavelength emitted from the light emitting device 1100 in the lower region of the light emitting device 1100 . or cracks may occur.

However, according to the light emitting device 1100 according to the embodiment, since the amount of light emitted between the region where the first bonding part 1171 and the second bonding part 1172 is disposed can be adjusted, the light emitting device 1100 ) to prevent discoloration or cracking of the package body disposed in the lower region.

According to an embodiment, in an area of 20% or more of the upper surface of the light emitting device 1100 on which the first bonding portion 1171 , the second bonding portion 1172 , and the third reflective layer 1163 are disposed, the semiconductor Light generated by the structure 1110 may be transmitted and emitted.

Accordingly, according to the embodiment, since the amount of light emitted in the direction of six surfaces of the light emitting device 1100 is increased, the light extraction efficiency is improved and the luminous intensity (Po) can be increased. In addition, it is possible to prevent discoloration or cracking of the package body disposed close to the lower surface of the light emitting device 1100 .

Also, according to the light emitting device 1100 according to the embodiment, a plurality of contact holes C1 , C2 , and C3 may be provided in the ohmic contact layer 1130 . The second conductivity type semiconductor layer 1113 and the reflective layer 1160 may be adhered to each other through a plurality of contact holes C1 , C2 , and C3 provided in the ohmic contact layer 1130 . Since the reflective layer 1160 can be in direct contact with the second conductivity-type semiconductor layer 1113 , the adhesive force can be improved compared to when the reflective layer 1160 comes into contact with the ohmic contact layer 1130 .

When the reflective layer 1160 is in direct contact with only the ohmic contact layer 1130 , the bonding or adhesive force between the reflective layer 1160 and the ohmic contact layer 1130 may be weakened. For example, when the insulating layer and the metal layer are combined, the bonding force or adhesive force between the materials may be weakened.

For example, when the bonding or adhesive strength between the reflective layer 1160 and the ohmic contact layer 1130 is weak, peeling may occur between the two layers. As such, when peeling occurs between the reflective layer 1160 and the ohmic contact layer 1130 , the characteristics of the light emitting device 1100 may be deteriorated, and reliability of the light emitting device 1100 may not be secured.

However, according to the embodiment, since the reflective layer 1160 may be in direct contact with the second conductivity type semiconductor layer 1113 , the reflective layer 1160 , the ohmic contact layer 1130 , and the second conductivity type semiconductor The bonding force and adhesive force between the layers 1113 may be stably provided.

Therefore, according to the embodiment, since the bonding force between the reflective layer 1160 and the second conductivity-type semiconductor layer 1113 can be stably provided, the reflective layer 1160 is separated from the ohmic contact layer 1130 . can be prevented In addition, since the coupling force between the reflective layer 1160 and the second conductivity-type semiconductor layer 1113 can be stably provided, the reliability of the light emitting device 1100 can be improved.

Meanwhile, as described above, a plurality of contact holes C1 , C2 , and C3 may be provided in the ohmic contact layer 1130 . Light emitted from the active layer 1112 is incident on the reflective layer 1160 through a plurality of contact holes C1 , C2 , and C3 provided in the ohmic contact layer 1130 to be reflected. Accordingly, it is possible to reduce the loss of light generated by the active layer 1112 when it is incident on the ohmic contact layer 1130 , and the light extraction efficiency can be improved. Accordingly, according to the light emitting device 1100 according to the embodiment, the luminous intensity can be improved.

Next, another example of the flip-chip light emitting device applied to the light emitting device package according to the embodiment will be described with reference to the accompanying drawings.

First, a light emitting device according to an embodiment will be described with reference to FIGS. 9 and 10 . 9 is a plan view illustrating an electrode arrangement of a light emitting device applied to a light emitting device package according to an embodiment, and FIG. 10 is a cross-sectional view taken along line F-F of the light emitting device shown in FIG. 9 .

Meanwhile, for better understanding, in FIG. 9 , only the relative arrangement relationship of the first electrode 127 and the second electrode 128 is conceptually illustrated. The first electrode 127 may include a first bonding part 121 and a first branch electrode 125 . The second electrode 128 may include a second bonding part 122 and a second branch electrode 126 .

Unlike the embodiment in which the flip-chip light emitting device of FIG. 7 is disposed, the area of the first and second bonding portions 121 and 122 of the first light emitting device 120A and the light emitting structure 123 of the first light emitting device 120A may be different from each other. The light emitting device according to the embodiment may include a light emitting structure 123 disposed on a substrate 124 as shown in FIGS. 9 and 10 .

The substrate 124 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 124 may be provided as a patterned sapphire substrate (PSS) having a concave-convex pattern formed on an upper surface thereof.

The light emitting structure 123 may include a first conductivity type semiconductor layer 123a, an active layer 123b, and a second conductivity type semiconductor layer 123c. The active layer 123b may be disposed between the first conductivity-type semiconductor layer 123a and the second conductivity-type semiconductor layer 123c. For example, the active layer 123b may be disposed on the first conductivity type semiconductor layer 123a , and the second conductivity type semiconductor layer 123c may be disposed on the active layer 123b .

In an embodiment, the first conductivity-type semiconductor layer 123a may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 123c may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity-type semiconductor layer 123a may be provided as a p-type semiconductor layer, and the second conductivity-type semiconductor layer 123c may be provided as an n-type semiconductor layer.

The light emitting device according to the embodiment may include a first electrode 127 and a second electrode 128 as shown in FIGS. 9 and 10 .

The first electrode 127 may include a first bonding part 121 and a first branch electrode 125 . The first electrode 127 may be electrically connected to the second conductivity-type semiconductor layer 123c. The first branch electrode 125 may be disposed to be branched from the first bonding part 121 . The first branched electrode 125 may include a plurality of branched electrodes branched from the first bonding part 121 .

The second electrode 128 may include a second bonding part 122 and a second branch electrode 126 . The second electrode 128 may be electrically connected to the first conductivity-type semiconductor layer 123a. The second branch electrode 126 may be disposed to be branched from the second bonding part 122 . The second branch electrode 126 may include a plurality of branch electrodes branched from the second bonding part 122 .

The first branched electrode 125 and the second branched electrode 126 may be alternately disposed in a finger shape. Power supplied through the first bonding part 121 and the second bonding part 122 by the first branched electrode 125 and the second branched electrode 126 is transmitted to the entire light emitting structure 123 . spread and can be provided.

The first electrode 127 and the second electrode 128 may be formed in a single-layer or multi-layer structure. For example, the first electrode 127 and the second electrode 128 may be ohmic electrodes. For example, the first electrode 127 and the second electrode 128 are ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni , Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, may be at least one of Hf or an alloy of two or more of these materials.

Meanwhile, a protective layer may be further provided on the light emitting structure 123 . The protective layer may be provided on the upper surface of the light emitting structure 123 . In addition, the protective layer may be provided on a side surface of the light emitting structure 123 . The protective layer may be provided such that the first bonding portion 121 and the second bonding portion 122 are exposed. In addition, the protective layer may be selectively provided on the periphery and the lower surface of the substrate 124 .

For example, the protective layer may be provided with an insulating material. For example, the protective layer is Si _x O _y , SiO _x N _y , It may be formed of at least one material selected from the group including Si _x N _y and Al _x O _y .

In the light emitting device according to the embodiment, light generated in the active layer 123b may be emitted in six directions of the light emitting device. The light generated by the active layer 123b may be emitted in a six-plane direction through the upper surface, the lower surface, and four side surfaces of the light emitting device.

The light emitted to the upper surface of the light emitting device may be incident into the above-described first and second recessed regions R1 and R2.

For reference, the vertical arrangement direction of the light emitting device described with reference to FIG. 2 and the vertical arrangement direction of the light emitting device illustrated in FIGS. 9 and 10 are opposite to each other.

As described with reference to FIG. 2 , the light emitted between the first bonding part 121 and the second bonding part 122 is disposed in the first recess R1 region of the first resin part ( 131) can be entered. Light emitted in the downward direction of the light emitting device may be diffused by the first resin part 131 , and light extraction efficiency may be improved.

Also, according to an embodiment, the sum of the areas of the first and second bonding portions 121 and 122 may be provided to be 10% or less based on the area of the top surface of the substrate 124 . According to the light emitting device package according to the embodiment, the sum of the areas of the first and second bonding portions 121 and 122 is the sum of the areas of the substrate 124 in order to secure a light emitting area emitted from the light emitting device to increase light extraction efficiency. It may be set to 10% or less based on the upper surface area.

In addition, according to an embodiment, the sum of the areas of the first and second bonding portions 121 and 122 may be 0.7% or more based on the area of the top surface of the substrate 124 . According to the light emitting device package according to the embodiment, the sum of the areas of the first and second bonding parts 121 and 122 is based on the upper surface area of the substrate 124 in order to provide a stable bonding force to the mounted light emitting device. may be set to 0.7% or more.

For example, the width of the first bonding part 121 along the long axis of the light emitting device may be several tens of micrometers. The width of the first bonding part 121 may be, for example, 70 micrometers to 90 micrometers. Also, the area of the first bonding part 121 may be several thousand square micrometers.

In addition, the width of the second bonding part 122 along the long axis of the light emitting device may be several tens of micrometers. The width of the second bonding part 122 may be, for example, 70 micrometers to 90 micrometers. Also, the area of the second bonding part 122 may be several thousand square micrometers.

As such, as the areas of the first and second bonding portions 121 and 122 are provided to be small, the amount of light transmitted through the lower surface of the first light emitting device 120A may be increased. In addition, the resin part 130 having good reflection characteristics may be provided under the first light emitting device 120A. Accordingly, the light emitted in the lower direction of the first light emitting device 120A is reflected by the resin part 130 to be effectively emitted in the upper direction of the light emitting device package, and light extraction efficiency can be improved.

On the other hand, the light emitting device package according to the embodiment described above is described based on a case in which the first and second bonding portions 121 and 122 are in direct contact with the first and second conductive layers 321 and 322 . became

However, according to another example of the light emitting device package according to the embodiment, a separate conductive component is provided between the first and second bonding portions 121 and 122 and the first and second conductive layers 321 and 322 . may be further disposed.

Meanwhile, the light emitting device package according to the described embodiment may be applied to a light source device.

In addition, the light source device may include a display device, a lighting device, a head lamp, etc. according to an industrial field.

As an example of the light source device, the display device includes a bottom cover, a reflecting plate disposed on the bottom cover, a light emitting module that emits light and includes a light emitting device, and is disposed in front of the reflecting plate and guides light emitted from the light emitting module to the front A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel; It may include a color filter disposed in front. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. Also, the display device may have a structure in which light emitting devices emitting red, green, and blue light are respectively disposed without including a color filter.

As another example of the light source device, the head lamp is a light emitting module including a light emitting device package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, and is reflected by the reflector It may include a lens that refracts light forward, and a shade that blocks or reflects a portion of light reflected by the reflector and directed to the lens to form a light distribution pattern desired by a designer.

A lighting device, which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply unit, an inner case, and a socket. Also, the light source device according to the embodiment may further include any one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

In the above, the embodiment has been mainly described, but this is only an example and does not limit the embodiment, and those of ordinary skill in the art to which the embodiment belongs are provided with several examples not illustrated above in the range that does not deviate from the essential characteristics of the embodiment. It can be seen that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And the differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

110: package body, 111 first frame, 112 second frame
113 body, 120A first light emitting element 120B second light emitting element 120C third light emitting element
121 first bonding unit, 122 second bonding unit, 123 light emitting structure, 124 substrate;
130 resin part, 135 fifth resin part, 140 molding part
R1 first recess, R2 second recess, R3 third upper recess, R4 fourth upper recess
TH1 first opening TH2 second opening

Claims (10)

a plurality of frames spaced apart from each other;
a body supporting the plurality of frames;
a plurality of light emitting devices disposed on the body, each of which is electrically connected to two adjacent frames among the plurality of frames; and
and a first resin part disposed between the body and the light emitting device and extending to the outside of the light emitting device. According to claim 1,
The body includes a plurality of first recesses formed in the upper surface of the body between the plurality of frames,
The first resin part is a light emitting device package disposed in the plurality of first recesses under the light emitting device. 3. The method of claim 2,
The depth of the first recess is in the range of 40㎛ to 60㎛ the light emitting device package. 3. The method of claim 2,
The width of the first recess is in the range of 5% to 80% of the length of the light emitting device package. 5. The method according to any one of claims 1 to 4,
The light emitting device package further comprising a second resin portion disposed on the upper surface of the frame away from the center of the light emitting device. 6. The method of claim 5,
The second resin part is a light emitting device package disposed around the light emitting device. 6. The method of claim 5,
The light emitting device includes two bonding portions disposed to be personal to each other under the light emitting device,
The bonding part is a light emitting device package disposed between the first resin part and the second resin part. 8. The method of claim 7,
the frame includes at least one second recess formed in an upper surface of the frame;
The second resin part is a light emitting device package disposed in the second recess. 9. The method of claim 8,
A side surface of the at least one second recess is a light emitting device package having an inclined surface or a curved surface. 6. The method of claim 5,
At least one of the first and second resin parts is a light emitting device package made of a reflective material.

Images