KR101997247B1 - Light emitting device and light apparatus having thereof - Google Patents

Abstract

A light emitting device according to an embodiment includes: a first lead frame having a first bonding area; A second lead frame spaced apart from the first lead frame and having a second bonding area; A first body coupled to the first and second lead frames, the first and second bonding regions of the first and second lead frames being open; A second body having an opening and disposed on the first body; A gap portion between the first and second lead frames; A light emitting chip having a first connection electrode connected to a first bonding region of the first lead frame, a second connection electrode connected to a second bonding region of the second lead frame, and a plurality of compound semiconductor layers; And a translucent resin layer disposed on the periphery of the light emitting chip, the first body being formed of a material having a higher reflectivity than the transmittance, and the second body having a transmittance And the first and second bonding regions of the first and second lead frames are formed in a region overlapping with the light emitting chip in the vertical direction, .

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device,

The embodiment relates to a light emitting device and a lighting device having the same.

BACKGROUND ART A light emitting device, for example, a light emitting device (Light Emitting Device) is a type of semiconductor device that converts electrical energy into light, and has been widely recognized as a next generation light source in place of existing fluorescent lamps and incandescent lamps.

Since the light emitting diode generates light by using a semiconductor element, the light emitting diode consumes very low power as compared with an incandescent lamp that generates light by heating tungsten, or a fluorescent lamp that generates ultraviolet light by impinging ultraviolet rays generated through high-pressure discharge on a phosphor .

In addition, since the light emitting diode generates light using the potential gap of the semiconductor device, it has a longer lifetime, faster response characteristics, and an environment-friendly characteristic as compared with the conventional light source.

Accordingly, much research has been conducted to replace an existing light source with a light emitting diode, and a light emitting diode is increasingly used as a light source for various lamps used for indoor and outdoor use, lighting devices such as a liquid crystal display, an electric signboard, and a streetlight.

The embodiment provides a light emitting device having a wide light directing angle.

The embodiment provides a light emitting device including a first body having a reflectance higher than that of the light emitting chip and a second body having a transmittance higher than that of the first body.

An embodiment provides a light emitting device in which a first body under a light emitting chip and a region of the light emitting chip overlap vertically.

An embodiment provides a light emitting device having a light emitting chip mounted on a first contact hole exposing a first lead frame and a second contact hole exposing a second lead frame in a first body.

Embodiments provide a light emitting device in which a light emitting chip is mounted in a flip manner in open regions of first and second bodies of different materials.

The embodiment provides a light emitting element having a resin layer and an optical lens bonded to the resin layer in an open region of a second body having a transmittance higher than that of the reflectance.

Embodiments provide a light emitting device and a lighting device having the same.

A light emitting device according to an embodiment includes: a first lead frame having a first bonding area; A second lead frame spaced apart from the first lead frame and having a second bonding area; A first body coupled to the first and second lead frames, the first and second bonding regions of the first and second lead frames being open; A second body having an opening and disposed on the first body; A gap portion between the first and second lead frames; A light emitting chip having a first connection electrode connected to a first bonding region of the first lead frame, a second connection electrode connected to a second bonding region of the second lead frame, and a plurality of compound semiconductor layers; And a translucent resin layer disposed on the periphery of the light emitting chip, the first body being formed of a material having a higher reflectivity than the transmittance, and the second body having a transmittance And the first and second bonding regions of the first and second lead frames are formed in a region overlapping with the light emitting chip in the vertical direction, .

The embodiment can increase the light directing angle of the light emitting device.

The embodiment can provide a light emitting device having a wide light directing angle of 140 degrees or more.

The embodiment can improve the light extraction efficiency of the light emitting device.

The embodiment can improve the reliability of the light emitting device and the lighting device having the same.

1 is a side sectional view of a light emitting device according to a first embodiment.
Fig. 2 is a partial enlarged view of a region A1 of the light emitting device of Fig. 1;
3 (A) and 3 (B) are views showing an example of a plan view of a first body of the light emitting device of FIG.
4 (A) - (D) are cross-sectional side views showing other examples of the upper surface of the first body of the light emitting device of FIG.
5 is a side sectional view of the light emitting device according to the second embodiment.
Fig. 6 is a partial enlarged view of a region A2 of the light emitting device of Fig. 5;
7 is a side sectional view of the light emitting device according to the second embodiment.
8 is a partial enlarged view of a region A3 of the light emitting element in Fig.
9 is a side sectional view showing a light emitting device according to a third embodiment.
10 is a partial enlarged view of an area A4 of the light emitting device of Fig.
11 is a side cross-sectional view of the light emitting device according to the fourth embodiment.
12 is a side sectional view of the light emitting device according to the fifth embodiment.
13 is a partially enlarged view of a region A5 of the light emitting device of Fig.
14 is a side sectional view of the light emitting device according to the sixth embodiment.
15 is a partial enlarged view of a region A6 of the light emitting element of Fig.
16 is a side sectional view showing a light emitting chip according to an embodiment.
17 is a bottom view of the light emitting chip of Fig.
18 is a side cross-sectional view of the light emitting device according to the seventh embodiment.
FIG. 19 is a plan view of the first body of the light emitting device of FIG. 18;
20 is a bottom view of the light emitting chip of the light emitting device of Fig. 18;
21 is a sectional view of the light emitting chip of Fig. 20 on the BB side.
22 is a cross-sectional side view of the light emitting chip of Fig. 20 on the CC side.
23 is a perspective view of a display device having a light emitting element according to the embodiment.
24 is a side sectional view showing another example of a display device having a light emitting element according to the embodiment.
25 is an exploded perspective view of a lighting apparatus having a light emitting element according to the embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under / under" Quot; on "and" under "as used herein are intended to refer to all that is" directly "or" indirectly " . In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings.

Hereinafter, a light emitting device according to an embodiment will be described with reference to the accompanying drawings.

FIG. 1 is a side sectional view of a light emitting device according to a first embodiment, and FIG. 2 is a partial enlarged view of a region A1 of the light emitting device of FIG.

1 and 2, the light emitting device 10 includes a plurality of lead frames including a first lead frame 21 and a second lead frame 31, and first and second lead frames 21, A second body 51 having an opening 55 and formed on the first body 41 with a material different from that of the first body 41; A light emitting chip 61 disposed in the opening 55 and electrically connected to the first and second lead frames 21 and 31 and a light transmitting resin layer disposed in the opening 55 and covering the light emitting chip 61 71, and an optical lens 81.

The length of the light emitting element 10 in the first direction X may be equal to or different from the length of the second direction Y perpendicular to the first direction X. [ The length of the light emitting element 10 in the first direction X may be the distance between both ends of the first lead frame 21 and the second lead frame 31 or the distance between the first body 41 and the second body 51 The width in the first direction X of the first direction X, and is not limited thereto. The length of the light emitting element 10 in the second direction Y is equal to the length of the first or second lead frame 21 or 31 or the length of the second May be equal to the width of the direction (Y). Here, the direction perpendicular to the upper surface of the light emitting chip 61 may be described as the normal direction Z of the light emitting chip 61. The first body 41 and the second body 51 may have the same length in the first direction X and the second direction Y or may have the same length as the width of the first body 41 in either direction. 2 body 51, but is not limited thereto.

The first lead frame 21 may protrude further than the outer surface of the first or second body 41 or 51 and the second lead frame 31 may protrude from the first or second body 41, 41, 51) of the outer surface (2). This can improve bonding between the first and second lead frames 21 and 31 and a bonding member such as a solder paste.

At least one of the upper surface and the lower surface of the first and second lead frames 21 and 31 may include a recessed region. The recessed region may increase a coupling force with the first body 41 . Also, at least one of the first and second lead frames 21 and 31 may have one or a plurality of holes, which can improve the coupling force with the first body 41.

The first lead frame 21 and the second lead frame 31 may be formed of a metal material such as Ti, Cu, Ni, Au, Cr, At least one or more alloys of tin (Ta), platinum (Pt), tin (Sn), silver (Ag) and phosphorus (P) and may also be formed as a single layer or a different metal layer, I do not. The first and second lead frames 21 and 31 are made of a metal material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum ), At least one of platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P) The first and second lead frames 21 and 31 may be formed of copper (Cu) and at least one kind of metal alloy such as a copper-zinc alloy, a copper-iron alloy, a copper-chromium alloy , And copper-silver-iron. The thickness of the first and second lead frames 21 and 31 may be 0.23 mm to 1.5 mm, for example, 0.25 mm to 0.5 mm.

A first body 41 is coupled to the first and second lead frames 21 and 31 and a second body 51 is coupled to the first body 41. A gap portion 42 is disposed between the first and second lead frames 21 and 31. The gap portion 42 is formed of the material of the first body 41, It is possible to block the light leaked to the outside.

The first body 41 is formed to have a predetermined thickness T1 or less and the thickness T1 can be obtained by using an angle? 1 of the inclined upper surface 47 and a length of an inclined upper surface, And may be formed to have a thickness ranging from 0.2 mm to 0.3 mm from the upper surfaces of the first and second lead frames 121 and 131.

And is physically coupled to the first lead frame 21 and the second lead frame 31 to support the first lead frame 21 and the second lead frame 31. The lower surface of the first body 41 may be formed in the same horizontal plane as the lower surfaces of the first lead frame 21 and the second lead frame 31.

The first body 41 may be formed of a material having a reflectivity higher than that of the light emitted from the light emitting chip 61, for example, a material having a reflectivity of 70% or more. When the reflectance of the first body 41 is 70% or more, the first body 41 may be defined as a non-transmissive or reflective material. The first body 41 may be formed of a resin-based insulating material, for example, a resin material such as polyphthalamide (PPA). The first body 41 may be formed of a thermosetting resin including silicon, epoxy resin, or plastic material, or a high heat-resistant, high-light-resistant material. The above-mentioned silicon includes a white-based resin. Also, the first body 41 may be selectively added with an acid anhydride, an antioxidant, a release agent, a light reflector, an inorganic filler, a curing catalyst, a light stabilizer, a lubricant, and titanium dioxide. . The first body 41 may be formed of at least one member selected from the group consisting of an epoxy resin, a modified epoxy resin, a silicone resin, a modified silicone resin, an acrylic resin, and a urethane resin. For example, an epoxy resin comprising triglycidylisocyanurate, hydrogenated bisphenol A diglycidyl ether and the like and an acid comprising hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride and the like DBU (, 8-Diazabicyclo (5,4,0) undecene-7) as an accelerator for epoxy resin and ethylene glycol, titanium oxide pigment and glass fiber as a cocatalyst were added to the epoxy resin, And a B-staged solid epoxy resin composition may be used. However, the present invention is not limited thereto.

In addition, a light shielding material or a diffusing agent may be mixed in the first body 41 to reduce the transmitted light. The first body 41 may have at least one member selected from the group consisting of a diffusing agent, a pigment, a fluorescent material, a reflective material, a light shielding material, a light stabilizer, and a lubricant in the thermosetting resin They may be appropriately mixed.

The first body 41 may include a metal oxide such as epoxy or silicon, and the metal oxide may include at least one of TiO ₂ , SiO ₂ , and Al ₂ O _3. The first body 41 41) at a ratio of 5 wt% or more. Accordingly, the first body 41 can effectively reflect incident light L2. Here, if the content of the metal oxide added in the first body 41 is 5 wt% or less, the reflection efficiency may be lowered. If the reflection efficiency is lowered, the light directing angle distribution may be changed. The first body 41 can provide higher reflection efficiency than the reflection efficiency of the lead frames 21 and 31. [

The second body (51) may be formed on the first body (41). The second body 51 may be formed of a translucent material having a transmittance higher than that of the reflectance, and may be formed of, for example, a silicon-based or epoxy-based resin. The second body 51 may be formed by an injection molding method or an epoxy molding compound (EMC) method. The second body 51 may be formed of a transparent material such as a translucent resin material in which impurities are not added, and the transmissivity thereof may be 70% or more. The second body 51 can effectively transmit the light L1 emitted from the light emitting chip 61 or the light L2 reflected from the first body 41. [

The upper surface 47 of the first body 41 is formed to have a larger area than the lower surface of the second body 51 to reflect light traveling in the upper surface direction of the first body 41, The optical loss can be reduced.

An opening 55 is disposed in the second body 51 and a light emitting chip 61 is disposed in the opening 55. The peripheral side surface 52 of the opening 55 may be inclined or perpendicular to the upper surface of the first and second lead frames 21 and 31 at a predetermined angle? 2 with respect to a flat horizontal surface. The periphery of the opening 55 may be covered with the inner surface 51 of the second body 51, but the present invention is not limited thereto. The opening 55 may include a circular shape, an elliptical shape, a polygonal shape, or an irregular shape when viewed from above, or a shape in which a corner portion is curved, but the present invention is not limited thereto.

The concavo-convex structures 54 and 53 may be disposed on the upper surface of the second body 51. The concavo-convex structures 54 and 53 improve the light extraction efficiency and increase the coupling force with the optical lens 81 .

The second body 51 is spaced from the first and second lead frames 21 and 31. The thickness of the second body 51 may be thicker than the maximum thickness T1 of the first body 41 or may be thicker than the thickness of the light emitting chip 61, And may be formed to a thickness of 250 mu m or more to 550 mu m or less, but the invention is not limited thereto. The second body 51 may be formed in the thickness range for light extraction efficiency.

A first contact hole 43 and a second contact hole 44 formed in the first body 41 are disposed at the bottom of the opening 55. The first contact hole 43 and the second contact hole 44 are disposed under the region of the light emitting chip 61, and may be disposed in one or more than one.

2, the upper surface 47 of the first body 41 is inclined at a predetermined angle (? 1), for example, 5 degrees or less, to the upper surfaces of the first and second lead frames 21 and 31, To 5 degrees. When the angle? 1 is more than 5 degrees, the improvement of the distribution of the light directing angles is insignificant. When the angle? 1 is less than 2 degrees, the inner region of the first body 41 can be unformed, Can be lowered. The first body 41 is inclined from the inner region 42A to the outer region and the thickness T1 of the outer region, that is, the maximum thickness may be thicker than the thickness of the inner region 42A. The minimum thickness of the inner region may be 0.05 mm or more. The maximum thickness or peak position of the first body 41 may be lower than the lowest semiconductor layer of the light emitting chip 61.

 The first body 41 is provided with first and second contact holes 43 and 44 in an inner region 42A corresponding to the opening 55. The first contact hole 43 exposes a part of the first lead frame 21 or the bonding area and the second contact hole 44 exposes a part of the second lead frame 31, Thereby exposing the area.

The light emitting chip 61 includes a plurality of compound semiconductor layers (not shown), a reflective electrode layer (not shown), a first connecting electrode 65 and a second connecting electrode 66. The first connection electrode 65 is connected to one of the n-type semiconductor layer and the p-type semiconductor layer of the plurality of compound semiconductor layers of the light emitting chip 61, and the second connection electrode 66 And is connected to the other semiconductor layer. Alternatively, the light emitting chip 61 may further include another electrode between the semiconductor layer and the first connection electrode 65 and the second connection electrode 66, but the present invention is not limited thereto. The light emitting chip 61 can improve the light extraction efficiency in the normal direction by arranging the reflective electrode layer under the plurality of compound semiconductor layers.

The first connection electrode 65 corresponds to the first contact hole 43 and is connected to the first lead frame 21 through the first contact electrode 67 disposed in the first contact hole 43 do. The second connection electrode 66 corresponds to the second contact hole 44 and is connected to the second lead frame 31 via the second contact electrode 68 disposed in the second contact hole 44. [ do.

A part of the first contact electrode 67 is disposed in the first contact hole 43 and electrically connects the first lead frame 21 and the first connection electrode 65. A part of the second contact electrode 68 is disposed in the second contact hole 44 and electrically connects the second lead frame 31 and the second connection electrode 66.

The first and second contact electrodes 67 and 68 are formed to have a width B1 that is narrower than the width G1 of the first and second contact holes 43 and 43. For example, The width difference (G1-B1) between the electrodes 67 and 68 and the first and second contact holes 43 and 44 may be formed within a range of 30 mu m or less, for example, 10 mu m or less. If the width difference G1-B1 is 30 탆 or more, the light extraction efficiency by the first lead frame 21 exposed to the first contact hole 43 may be reduced.

The thickness of the first contact electrode 67 and the second contact electrode 68 may be thicker than the inner region 42A of the first body 41 disposed in the opening 55, It is not limited. The thickness of the inner region 42A of the first body 41 may be smaller than the difference between the light emitting chip 61 and the lead frames 21 and 31. For example, If it is 0.08 mm or more, a problem of contact with the light emitting chip 61 may occur. If the thickness is less than 0.05 mm, the first body 41 may not be formed or damaged. .

The first contact electrode 67 and the second contact electrode 68 may include a circular, polygonal, or irregular shape as viewed from above, and the first and second contact holes 43, A circular shape, a polygonal shape, or an irregular shape. In addition, the first contact electrode 67 and the second contact electrode 68 and the first and second contact holes 43 and 44 may have the same shape or different shapes, but the present invention is not limited thereto.

The first and second contact electrodes 67 and 68 are made of a conductive material and include at least one of an alloy of a metal material such as Ag, Au-Sn, Ag-Sn, Au-Al, Cu- But is not limited thereto.

The first and second connection electrodes 65 and 66 may include any one of circular, elliptical, polygonal, and irregular shapes as viewed from above. The height may be in a range of 0.10 mm or less, for example, 0.03 mm to 0.05 mm , The material may be formed of at least one of metals such as Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Ti, W, have. When the thickness of the first and second connection electrodes 65 and 66 is 0.10 mm or more, the thickness of the light emitting device 10 is increased. When the thickness is 0.03 mm or less, the bonding process is difficult .

The inner region 42A of the first body 41 may be a flat surface or a surface inclined in a predetermined direction. For example, the inner region 42A of the first body 41 may be disposed such that an inclined upper surface 47 of the first body 41 extends. The inner region 42A of the first body 41 may be an upper surface of the gap portion 42 or a portion extending from the gap portion 42. [

The light emitting chip 61 is electrically connected to the first and second lead frames 21 and 31 through the first and second connection electrodes 65 and 66. The light emitting chip 61 may be connected to the first and second lead frames 21 and 31 without using a separate wire. The top surface area of the light emitting chip 61 may be smaller than the bottom surface area of the opening 55.

The light emitting chip 61 may include at least one of an LED chip using a semiconductor compound such as an ultraviolet (UV) LED chip, a blue LED chip, a green LED chip, a white LED chip, and a red LED chip. The light emitting chip 161 may include a group III-V compound semiconductor. The active layer may include a double junction structure, a single well structure, a multi-well structure, a single quantum well, a multi quantum well (MQW) And a quantum dot structure. The active layer may be formed by alternately arranging a well layer / a barrier layer, and the period of the well layer / barrier layer may be, for example, a periodic structure of InGaN / GaN, GaN / AlGaN, InGaN / InGaN, or InAlGaN / InAlGaN And may be formed in 2 to 30 cycles. The active layer may include a semiconductor such as ZnS, ZnSe, SiC, GaP, GaAlAs, AlN, InN, and AlInGaP. However, the present invention is not limited thereto. The emission wavelength of the active layer can selectively emit light from light in the ultraviolet band to light in the visible light band, but the present invention is not limited thereto. The thickness of the light emitting chip 61 is a thickness excluding the first and second connection electrodes 65 and 66 and may be in the range of 80 μm to 400 μm, for example, 80 μm to 150 μm, I do not.

On the other hand, the transparent resin layer 71 is filled in the opening 55 of the second body 51 and covers the light emitting chip 61. The light transmitting resin layer 71 may be in contact with the inner region 42A of the first body 41 and may be in contact with the upper surface, the side surface, and the lower surface of the light emitting chip 61.

The light transmitting resin layer 71 may be formed of a resin material such as silicone or epoxy and is formed of a material having a transmittance of 70% or more, for example, 90% or more with respect to a wavelength (e.g., blue wavelength) emitted from the light emitting chip . The upper surface of the transparent resin layer 71 may be flat, and may be concave or convex as another example.

The refractive index of the light transmitting resin layer 71 may be 1.6 or less and the refractive index of the second body 51 may be the same or lower than the refractive index of the light transmitting resin layer 71. In addition, the refractive index of the second body 51 may be about ± 0.2, which is different from the refractive index of the transparent resin layer 71, but is not limited thereto.

The light transmitting resin layer 71 may include at least one of a filler, a diffusing agent, a pigment, a fluorescent material, and a reflective material. The phosphor mixed in the transparent resin layer 71 absorbs the light emitted from the light emitting chip 61 and converts the light into light having different wavelengths. The phosphor may include at least one of a yellow phosphor, a green phosphor, a blue phosphor, and a red phosphor. For example, the phosphor may be a nitride-based phosphor, an oxynitride-based phosphor, or the like, which is mainly activated by lanthanoid- Alkaline earth metal borate halogen phosphors, alkaline earth metal aluminate phosphors, alkaline earth silicate, alkaline earth metal silicate phosphors, alkaline earth metal silicate phosphors, alkaline earth metal silicate phosphors, alkaline earth metal silicate phosphors, A rare earth aluminate, a rare earth silicate or a lanthanoid-based element such as Eu, which is mainly activated by a lanthanoid element such as Ce, etc., which is mainly activated by a rare earth aluminate, a rare earth aluminate, Organic and organic complexes, and the like. The. As a specific example, the above-mentioned phosphors can be used, but the present invention is not limited thereto.

The first body 41 is in contact with the second body 51 made of a resin and the transparent resin layer 71, thereby improving light reflection efficiency and suppressing moisture penetration.

In the first embodiment, the first and second contact holes 43 and 44 among the upper surface regions of the first and second lead frames 21 and 31 are formed using the first body 41 having a thin thickness and a reflection characteristic And cover the entire area except for the area. Accordingly, the reflection efficiency of the light emitted from the light emitting chip 61 can be improved, and moisture penetration can be effectively prevented.

The optical lens 81 is disposed on the second body 51 and the transparent resin layer 71. The optical lens 81 may be made of a translucent resin material such as silicone or epoxy, or may be made of glass. The refractive index of the optical lens 81 may be equal to or lower than the refractive index of the transparent resin layer 71. And may be in contact with the upper portions of the light transmitting resin layer 71 and the second body 51.

The optical lens 81 includes a light exit surface 82 and a total reflection surface 85. The light exit surface 82 has a curved surface around the upper portion of the light emitting chip 61 and emits incident light to the outside. The totally reflecting surface 85 reflects incident light in the direction of the light exit surface 82 or downward. The front reflection surface 85 is recessed in the upward direction of the light emitting chip 61 and is separated from the light transmitting resin layer 71. The total reflection surface 85 corresponds to the light emitting chip 61 and is formed as a concave curved surface with a lower depth in the direction of the light emitting chip 61 than the upper surface of the optical lens 81, And allows some light to pass through. The optical lens 81 can irradiate the light passing through the second body 51 with a broader light-directing angle distribution.

The reflecting surface 85 may be filled with a reflective material (not shown), and the reflective material is doped with a metal oxide in a resin such as silicon or epoxy.

Further, the light exit surface 82 may be formed in a hemispherical shape for light distribution of light, and may be formed in a circular shape or an elliptical shape when viewed from above.

The outer portion of the optical lens 81 may extend from the second body 51 to the upper surface of the first body 41, but the present invention is not limited thereto. The optical lens 81 may be formed on the second body 51 or may be manufactured separately and then adhered thereto, but the present invention is not limited thereto.

Referring to FIG. 3A, the inner region 42A of the first body 41 may be formed as a flat surface with respect to the inclined upper surface 47. Here, the inner region 42A may be formed in a polygonal shape.

The distance D21 between the first and second contact holes 43 and 44 may be equal to the width D1 of the light emitting chip 61 or the bottom of the opening 55 as shown in FIGS. May be narrower than the width (D2), and may be formed wider than the width of the gap portion (42). The first and second contact holes 43 and 44 may be smaller than the area of the inner region 42A of the first body 41. [

Referring to FIG. 3B, a plurality of the first and second contact holes 43 and 44 may be arranged in the inner region 42A of the first body 41, and the corner portions thereof may be curved . A surface 47-1 inclined at an angle different from the inclination angle of the inclined upper surface 7 or having a predetermined curvature is formed between the inner region 42A of the first body 41 and the inclined upper surface 47, Can be formed. This surface 47-1 can effectively reflect light emitted in the lateral direction of the light emitting chip 61.

The first and second contact holes 43 and 44 may be formed to be wider than the area of the inner region 42A of the first body 41, I do not.

4 (A) to 4 (D) are cross-sectional side views showing other examples of the upper surface of the first body according to the embodiment.

4A, the upper surface of the first body 41 is connected to the flat inner surface 42-1 and the flat inner surface 42-1 is connected to the inclined upper surface 47. As shown in FIG. That is, the inner region 42-1 corresponding to the light emitting chip is formed flat, and the light is efficiently reflected by using the inclined upper surface 47 around the inner region 42-1.

As shown in FIG. 4B, the inclined upper surface 47 of the first body 41 is inclined to the central region 42-2. The minimum thickness of the inclined upper surface 47 is formed to be thinner than the distance between the light emitting chip and the lead frames 21 and 31.

The upper surface 47 of the first body 41 may be formed to have a predetermined curvature up to the inner region 42-3 or the upper surface 47 may be formed as an inclined plane, 42-3 may correspond to the light emitting chip and may have a concave curved surface or a convex curved surface.

4D, the inner region 42-4 of the inclined upper surface 47 of the first body 41 may be formed in such a shape that a portion corresponding to the gap portion 42 is convexly protruded And the boundary portion 42-5 between the inner region 42-4 and the inclined upper surface 47 may be formed to have the lowest thickness. That is, the central portion of the inner region 42-4 may be formed thicker than the outer boundary portion 42-5, and the incident light may be reflected in the outward direction.

5 is a side sectional view showing a light emitting device according to a second embodiment, and Fig. 6 is an enlarged view of a region A2 in Fig. In describing the second embodiment, the same parts as those of the first embodiment will be described with reference to the first embodiment.

5 and 6, the light emitting device 100 includes a plurality of lead frames including a first lead frame 121 and a second lead frame 131, and first and second lead frames 121 and 131, A second body 151 having an opening 155 and formed of a different material from the first body 141 on the first body 141 and a second body 151 formed of a material different from the first body 141 on the first body 141, A light emitting chip 161 disposed in the opening 155 and electrically connected to the first and second lead frames 121 and 131, a light transmitting resin layer 171 disposed in the opening 155 and covering the light emitting chip 161, And includes a lens 181 and a phosphor layer 191.

The first lead frame 121 may protrude further than the first side S1 of the first or second body 141 or 151 and the second lead frame 131 may protrude outwardly from the first or second body 141, May protrude further outward than the second side surface (S2) of the body (141, 151). This can improve bonding between the first and second lead frames 121 and 131 and a bonding member such as a solder paste.

A first body 141 is coupled to the first and second lead frames 121 and 131 and a second body 151 is coupled to the first body 141.

The first body 141 may be formed of a reflective or opaque material. The second body 151 may be formed of a transparent material. The first and second bodies 141 and 151 The first embodiment will be referred to.

The upper surface of the first body 141 is formed to have a larger area than the lower surface of the second body 151 to reflect light traveling in the upper surface direction of the first body 141, Can be reduced.

An opening 155 is disposed in the second body 151 and a light emitting chip 161 is disposed in the opening 155.

The peripheral side surface 152 of the opening 155 may be inclined or perpendicular to the bottom of the opening 155 at a predetermined angle. The periphery of the opening 155 may be covered by the inner surface 152 of the second body 151, but the present invention is not limited thereto.

The first lead frame 121 includes a first engagement hole 122, a first recess 123, and a first bonding area 127. A portion 143 of the first body 141 is coupled to the first engagement hole 122 of the first lead frame 121. Here, the first engagement hole 122 may have a step width larger than the upper width or a stepped structure for the coupling force with the first body 141. Accordingly, the adhesive strength to the portion 143 of the first body 141 is strengthened, and moisture penetration can be suppressed.

The first recess 122 may be formed at a depth T5 of 50% or less from the upper surface of the first lead frame 121 and a portion 145 of the first body 141 is filled. The inner region of the first recess portion 122 is disposed adjacent to the light emitting chip 161 and below the opening portion 155. Accordingly, a portion 145 of the first body 141 filled in the first recess 122 may be exposed under the opening 155.

In the first recess 122, the width of the first direction X may be 50% or more of the thickness of the first lead frame 121, and the width of the second direction Y may be The first lead frame 121 may have a thickness of 100% or more of the thickness of the first lead frame 121. If the depth T5 of the first recess 122 exceeds 50%, the strength of the first lead frame 121 may be weakened. If the depth is too narrow, The bonding force can be weakened.

The second lead frame 131 includes a second engagement hole 132, a second recess 133, and a second bonding area 137. A portion 144 of the first body 141 is coupled to the second engagement hole 132 of the second lead frame 131. Here, the second engagement hole 132 may have a step width larger than the upper width or a stepped structure for the coupling force with the first body 141. Accordingly, the adhesion of the first body 141 to the portion 144 is enhanced, and moisture penetration can be suppressed.

The second recess portion 132 may be formed at a depth T5 of 50% or less from the upper surface of the second lead frame 131 and a portion 146 of the first body 141 is filled. The inner region of the second recess portion 132 is located adjacent to the light emitting chip 161 and below the opening portion 155. [ A portion 146 of the first body 141 filled in the second recess portion 132 may be exposed under the opening portion 155. The portions 145 and 146 of the first body 141 are exposed at a predetermined width B2 under the opening 155 so that the reflection efficiency in the opening 155 can be improved. The width B2 is 5 占 퐉 or more, which can improve the adhesive force with the translucent resin layer 171 and improve the light reflection efficiency.

The width of the first direction X may be 50% or more of the thickness of the second lead frame 131 and the width of the second direction Y May be 100% or more of the thickness of the second lead frame 131. If the depth T5 of the second recess portion 132 exceeds 50%, the strength of the second lead frame 131 may be weakened. If the depth T5 of the second lead frame 131 is too narrow, The bonding force can be weakened.

The first bonding region 127 is disposed between the first recess portion 123 and the gap portion 142 and exposed from the first body 141 at the bottom of the opening portion 155. The second bonding region 137 is disposed between the second recess portion 133 and the gap portion 142 and is exposed from the first body 141 at the bottom of the opening portion 155. The upper portion 142A of the gap portion 142 may be formed to have a width wider than the gap between the first and second lead frames 121 and 131.

The first bonding region 127 of the first lead frame 121 and the second bonding region 137 of the second lead frame 131 are exposed at the bottom of the opening 155. A gap portion 142 is disposed between the first bonding region 127 and the second bonding region 137 and the gap portion 142 physically separates the first and second bonding regions 127 and 137 . The gap portion 142 may be formed of the material of the first body 141 to block light leaking to the gap portion 142.

The distance D3 between the first and second bonding regions 127 and 137 may be narrower than the width D1 of the light emitting chip 161. [ The width D4 of the first and second bonding regions 127 and 137 may be equal to or greater than the width B1 of the first and second contact electrodes 167 and 168. [ The first and second bonding regions 127 and 137 may be formed in a circular or polygonal shape when viewed from above, and may have an area corresponding to the first and second contact holes of FIG. This is because the width difference D4-B1 between the first and second bonding regions 12 and 137 and the first and second contact electrodes 167 and 168 can be formed to be 30 占 퐉 or less, for example, 10 占 퐉 or less. If the width difference G1-B1 is 30 탆 or more, the light extraction efficiency by the first lead frame 21 exposed to the first contact hole 43 may be reduced.

Here, the first lead frame 121 and the second lead frame 131 may be formed of the material described in the first embodiment, and may have a thickness of 0.23 mm to 1.5 mm, for example, 0.25 mm to 0.5 mm Range.

A first body 141 is coupled to the first and second lead frames 121 and 131. An upper surface of the first body 141 is connected to the first and second lead frames 121 and 131 And may have a thickness ranging from 0.2 mm to 0.25 mm from the upper surfaces of the first and second lead frames 121 and 131. [ An inner region 142A of the first body 141 is connected to the gap portion 142 and a sloped surface 47 having a predetermined thickness from the bottom of the opening 155 protrudes from the bottom surface of the second body 151 And its outer portion can be formed as a flat or inclined surface.

The light emitting chip 161 is disposed in the opening 155 and the light emitting chip 161 is electrically connected to the first and second lead frames 121 and 131 through the first and second contact electrodes 167 and 168 . The first and second connection electrodes 165 and 166 of the light emitting chip 161 are bonded on the first and second contact electrodes 167 and 168. The first and second bonding regions 127 and 137 overlap the region of the light emitting chip 161 and are disposed in a region overlapping the light emitting chip 161, for example. Accordingly, the light extraction efficiency by the first body 141 can be improved by minimizing the first and second bonding regions 127 and 137.

A second body 151 having the opening 155 is coupled to the first body 141. The second body 151 may be formed of a light transmitting material as in the first embodiment, and the description of the first embodiment will be referred to. Further, an adhesive layer may be formed between the upper surface of the first body 141 and the upper surface of the second body 151, but the present invention is not limited thereto. Further, the peripheral side surface 152 of the opening 155 may be formed to be inclined or vertically formed, or may be formed in a stepped structure, but the present invention is not limited thereto.

The light transmitting resin layer 171 may be disposed on the opening 155 and the phosphor layer 191 may be disposed on the light transmitting resin layer 171. The top surface height of the light transmitting resin layer 171 may be lower than the top surface height of the light emitting chip 161 or may extend from the top surface of the light emitting chip 161.

The light transmitting resin layer 171 may be in contact with the side surface and the bottom surface of the light emitting chip 161. The transparent resin layer 171 may be a clean molding material in which an impurity such as a diffusion material or a scattering material is added to the inside of the translucent resin layer 171 or no impurities are added thereto.

The phosphor layer 191 is doped with a phosphor in a light transmitting resin material. The phosphor absorbs light emitted from the light emitting chip 161 and converts the light into light having a different wavelength. The phosphor may include at least one of a yellow phosphor, a green phosphor, a blue phosphor, and a red phosphor. For example, the phosphor may be a nitride-based phosphor, an oxynitride-based phosphor, or the like, which is mainly activated by lanthanoid- Alkaline earth metal borate halogen phosphors, alkaline earth metal aluminate phosphors, alkaline earth silicate, alkaline earth metal silicate phosphors, alkaline earth metal silicate phosphors, alkaline earth metal silicate phosphors, alkaline earth metal silicate phosphors, A rare earth aluminate, a rare earth silicate or a lanthanoid-based element such as Eu, which is mainly activated by a lanthanoid element such as Ce, etc., which is mainly activated by a rare earth aluminate, a rare earth aluminate, Organic and organic complexes, and the like. The. As a specific example, the above-mentioned phosphors can be used, but the present invention is not limited thereto.

The thickness T4 of the phosphor layer 191 may be 100 탆 or less and may be formed on the upper surface of the light emitting chip 161 or on the upper surface and / But is not limited thereto.

An optical lens 181 is coupled onto the phosphor layer 191, the light transmitting resin layer 171, and the second body 151. The optical lens 181 is in contact with the surfaces of the phosphor layer 191, the light-transmitting resin layer 171 and the second body 151 and is formed by the concave and convex structures 153 and 154 of the second body 151 Adhesion is improved.

The optical lens 181 includes the light exit surface 182 and the total reflection surface 185. The light exit surface 182 has a curved surface around the upper portion of the light emitting chip 161 and emits incident light to the outside. The totally reflecting surface 185 reflects incident light toward the light output surface 182 or downward. The front reflecting surface 185 is recessed in the upward direction of the light emitting chip 161 and is separated from the light transmitting resin layer 171. The total reflection surface 185 corresponds to the light emitting chip 161 and is formed to have a concave curved surface with a lower depth in the direction of the light emitting chip 161 than the upper surface of the optical lens 181, And allows some light to pass through. The optical lens 181 can irradiate the light transmitted through the second body 151 with a wider light directing angle distribution.

A reflective material 186 may be filled on the front reflector 185 and a metal oxide may be added to the reflective material 186 in a resin such as silicon or epoxy.

The outer frame 183 of the optical lens 181 may extend from the second body 151 to the upper surface of the first body 141 and is not limited thereto. The optical lens 181 may be injected onto the second body 151 or may be separately manufactured and then adhered thereto, but the present invention is not limited thereto.

7 is a side sectional view showing a light emitting device according to a third embodiment, and Fig. 8 is an enlarged view of an area A3 in Fig. In the following description of the third embodiment, the same reference numerals are given to the same components as those of the first and second embodiments.

7 and 8, the light emitting device includes a plurality of lead frames including a first lead frame 121 and a second lead frame 131, and a plurality of lead frames 121 and 131 coupled to the first and second lead frames 121 and 131, A second body 151 having a first body 141 and an opening 155 and formed on the first body 141 with a material different from that of the first body 141; A light emitting chip 161 electrically connected to the first and second lead frames 121 and 131, a light transmitting resin layer 172 disposed in the opening 155 and covering the light emitting chip 161, 181).

An upper portion of the gap portion 142 disposed between the first and second lead frames 121 and 131 is an inner region 142B of the first body 141. The upper surface of the first and second lead frames 121 and 131 And is exposed at the bottom of the opening 155. The width of the inner region 142B may be larger than the distance between the first and second lead frames 121 and 131, but the present invention is not limited thereto.

A light transmitting resin layer 172 is formed on the opening 155 of the second body 151 and the light transmitting resin layer 172 is filled in the opening 155. The upper surface of the light transmitting resin layer 172 may be formed to have a height T6 covering the phosphor layer 191 disposed on the light emitting chip 161. The upper surface of the transparent resin layer 172 may have the same height as the upper surface height T6 of the opening 155, but the present invention is not limited thereto.

FIG. 9 is a side sectional view showing a light emitting device according to a third embodiment, and FIG. 10 is a partial enlarged view of a region A4 of the light emitting device of FIG. In describing the third embodiment, the same parts in the first and second embodiments will be referred to the first and second embodiments.

9 and 10, the light emitting device includes a plurality of lead frames including a first lead frame 121 and a second lead frame 131, and a plurality of lead frames 121, 121 coupled to the first and second lead frames 121, A second body 151 having a first body 141 and an opening 155 and formed on the first body 141 with a material different from that of the first body 141; A light emitting chip 161 electrically connected to the first and second lead frames 121 and 131 and a light transmitting resin layer 173 disposed at the opening 155 and covering the light emitting chip 161, 181).

The first recess portion 123 of the first lead frame 121 and the second recess portion 133 of the second lead frame 131 are provided with the portions 145 and 146 of the first body 141, 1 and the second lead frames 121, 131, respectively. That is, the upper surface inner side 147A of the portions 145 and 146 of the first body 141 exposed at the bottom of the opening 155 is disposed lower than the upper surfaces of the first and second lead frames 121 and 131, May be formed as a photographic surface. The lower end of the circumferential side 152A of the second body 151 may be disposed in the first and second recessed portions 123 and 133. The circumferential side 152A of the second body 151 The inclined surfaces from the first recess portions 123 and 133 can be started.

The lower end of the circumferential side 152A of the second body 151 may be disposed below the region of the light emitting chip 161 so that the first and second The bonding force of the bodies 141 and 151 can be strengthened, and moisture penetration can be suppressed. In addition, since the stacking structure of the first body 141 and the second body 151 disposed in the first and second recessed portions 123 and 133 is disposed below the light emitting chip 161, .

The light transmitting resin layer 173 may be disposed in the opening 155 and partially extend to the upper surface of the second body 151. Accordingly, the height of the light transmitting resin layer 173 may be higher than the depth of the opening 155.

A phosphor layer 191 is disposed on the light emitting chip 161 and the phosphor layer 191 may be formed on the upper surface or the upper surface or the side surface of the light emitting chip 161. However,

11 is a side sectional view showing a light emitting device according to the fourth embodiment. In describing the fourth embodiment, the same parts in the first and second embodiments will be referred to the first and second embodiments.

11, the light emitting device includes a plurality of lead frames including a first lead frame 121 and a second lead frame 131, a first body coupled to the first and second lead frames 121 and 131, A second body 151 formed on the first body 141 with a different material from the first body 141 and having an opening 155 and a second body 151 disposed in the opening 155, A light emitting chip 162 electrically connected to the first lead frame 121 and the second lead frame 121 and a translucent resin layer 171 disposed at the opening 155 and covering the light emitting chip 162, Layer 192. < / RTI >

The light emitting chip 162 of the embodiment will be described with reference to FIGS. 16 and 17 described later. The light emitting chip 162 may be bonded to the first and second contact electrodes 167 and 168 by the first and second connection electrodes 163 and 164 to be electrically connected to the first and second lead frames 121 and 131.

The optical lens 181 may be extended or disposed in the opening 155 of the first body 141, or air or other light diffusing material may be disposed.

The phosphor layer 192 may extend from the top surface to the side surface of the light emitting chip 162 to convert the wavelength of the light emitted from the light emitting chip 162.

FIG. 12 is a side sectional view showing a light emitting device according to a fifth embodiment, and FIG. 13 is an enlarged view of a region A5 of the light emitting device of FIG. In describing the fifth embodiment, the same parts of the above-described embodiments will be described with reference to the above-described embodiments.

12 and 13, the light emitting device includes a plurality of lead frames including a first lead frame 121 and a second lead frame 131, and a plurality of lead frames 121, 131 coupled to the first and second lead frames 121, A second body 151 having a first body 141 and an opening 155 and formed on the first body 141 with a material different from that of the first body 141; A light emitting chip 162 electrically connected to the first and second lead frames 121 and 131 and a light transmitting resin layer 173 disposed at the opening 155 and covering the light emitting chip 162, ) And a phosphor layer 191. [

A portion 145 and 146 of the first body 141 are disposed on the first and second recess portions 123 and 133 of the first and second lead frames 121 and 131 and an upper surface 147B thereof is formed on the first and second lead frames 121 and 131, Two lead frames 121 and 131 are closer to the light emitting chip 161 than the upper surfaces thereof. The upper surface 147B extends from the inclined upper surface 147 of the first body 141 and may be formed as a horizontal surface or an inclined surface. The upper surface 147B may be disposed between the lower surface of the light emitting chip 162 and the upper surfaces of the first and second lead frames 121 and 131. This structure may be connected to the gap portion 142 and the upper portion 142A .

The first and second lead frames 121 and 131 may have a height higher than the upper surfaces of the first and second lead frames 121 and 131 and may be disposed under the light emitting chip 162, 167 and 168 can be prevented from overflowing into other areas.

FIG. 14 is a side sectional view showing a light emitting device according to a sixth embodiment, and FIG. 15 is an enlarged view of a region A6 of the light emitting device of FIG. In describing the sixth embodiment, the same parts as those in the above-described embodiments will be described with reference to the above-described embodiments.

14 and 15, the light emitting device includes a plurality of lead frames including a first lead frame 121 and a second lead frame 131, and a plurality of lead frames 121, 131 coupled to the first and second lead frames 121, A second body 151 having a first body 141 and an opening 155 and formed on the first body 141 with a material different from that of the first body 141; A light emitting chip 162 electrically connected to the first and second lead frames 121 and 131 and a light transmitting resin layer 173 disposed at the opening 155 and covering the light emitting chip 162, ) And a phosphor layer 191. [

The first connection electrode 163 of the light emitting chip 162 is directly bonded onto the first bonding region 127 of the first lead frame 121 and the second connection electrode 164 is bonded directly to the second lead frame 121. [ Is directly bonded onto the second bonding region 137 of the first electrode 131. To this end, a bonding layer may be further formed on the surfaces of the first and second lead frames 121 and 131, for example, the first and second bonding regions 127 and 137 so as not to use a separate bump. The bonding layer may be formed of a material such as Ag or Au-Sn. The heat radiation efficiency of the light emitting chip 162 can be improved. Further, the bottom surface of the light emitting chip 162 may be in contact with the inner upper surface of the first body 141, but the present invention is not limited thereto.

FIG. 16 is a side sectional view showing one example of the light emitting chip according to the embodiment, and FIG. 17 is a bottom view showing the light emitting chip of FIG.

16 and 17, the light emitting device 162 includes a substrate 211, a light emitting structure 220, a reflective electrode layer 230, a first insulating layer 221, a first electrode structure 231, 233, 235, A second connection electrode 241, a second connection electrode 243, and a support member 251. The electrode structures 232, 234, and 236, the second insulation layer 223, the first connection electrode 241,

The substrate 211 may use a light-transmitting, insulating or conductive substrate, e.g., sapphire (Al ₂ O _3), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ of At least one can be used. The light extracting structure may be formed on one side surface of the substrate, such as a concavo-convex pattern. The concavo-convex pattern may be formed by etching the substrate, or may be formed as a separate roughness-like pattern. The concavo-convex pattern may include a stripe shape or a convex lens shape. The substrate 211 can be removed.

A first semiconductor layer 213 may be formed under the substrate 211. The first semiconductor layer 213 may include at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The first semiconductor layer 213 may be formed of a buffer layer and the buffer layer may reduce a difference in lattice constant between the substrate 211 and the nitride semiconductor layer. The first semiconductor layer 213 may be formed of an undoped semiconductor layer. The undoped semiconductor layer may be formed of a Group III-V compound semiconductor, for example, a GaN-based semiconductor. The undoped semiconductor layer may have a first conductivity type property without intentionally doping the conductive type dopant during the manufacturing process, The conductivity of the semiconductor layer 215 is lower than that of the conductive dopant. The first semiconductor layer 213 may be formed of at least one of a buffer layer and an undoped semiconductor layer, or may be formed or removed.

A light emitting structure 220 may be formed under the first semiconductor layer 213. The light emitting structure 220 includes a group III-V compound semiconductor, for example, In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + It is possible to emit light having a predetermined peak wavelength within a wavelength range from the ultraviolet band to the visible light band.

The light emitting structure 220 includes a first conductive semiconductor layer 215, a second conductive semiconductor layer 219, and a second conductive semiconductor layer 215 between the first conductive semiconductor layer 215 and the second conductive semiconductor layer 219. And an active layer 217 formed thereon.

A first conductive semiconductor layer 215 may be formed under the first semiconductor layer 213. The first conductive semiconductor layer 215 may be formed of a Group III-V compound semiconductor doped with the first conductive dopant, for example, a semiconductor layer to which an N-type dopant is added.

A superlattice structure in which different semiconductor layers are alternately stacked may be formed between the first conductive semiconductor layer 215 and the first semiconductor layer 213. Such a superlattice structure may reduce lattice defects .

A first clad layer may be formed between the first conductive semiconductor layer 215 and the active layer 217. The first clad layer may be formed of a GaN-based semiconductor, and the band gap of the first clad layer may be greater than a bandgap of the active layer 217. The first cladding layer is formed in the first conductivity type and serves to constrain carriers.

An active layer 217 is formed under the first conductive semiconductor layer 215. The active layer 217 selectively includes a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure, and includes a well layer and a barrier layer period. The well layer comprises a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), and wherein the barrier layer is In _x Al _y And Ga _1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1). The period of the well layer / barrier layer may be one or more cycles using a lamination structure of, for example, InGaN / GaN, GaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, and InAlGaN / InAlGaN. The barrier layer may be formed of a semiconductor material having a band gap higher than a band gap of the well layer.

A second conductive semiconductor layer 219 is formed under the active layer 217. The second conductive semiconductor layer 219 may be formed of any one of compound semiconductors such as a Group II-V compound semiconductor doped with a p-type dopant, such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN and AlInN. The second conductive semiconductor layer 219 may include a superlattice structure, and the superlattice structure may include an InGaN / GaN superlattice structure or an AlGaN / GaN superlattice structure.

For example, the first conductivity type semiconductor layer 215 may be a P-type semiconductor layer, and the second conductivity type semiconductor layer 219 may be disposed as an N-type semiconductor layer. can do. A first conductive semiconductor layer having a polarity opposite to that of the second conductive type may be further disposed on the second conductive semiconductor layer 219.

The light emitting device 162 may be defined as a light emitting structure 220 including the first conductive semiconductor layer 215, the active layer 217 and the second conductive semiconductor layer 219. The light emitting structure 220 ) May be implemented by any one of an NP junction structure, a PN junction structure, an NPN junction structure, and a PNP junction structure. Herein, P is a P-type semiconductor layer, and N is an N-type semiconductor layer, and the - indicates a structure in which the P-type semiconductor layer and the N-type semiconductor layer are in direct contact or indirect contact. Hereinafter, for convenience of explanation, the lowermost layer of the light emitting structure 220 will be described as the second conductivity type semiconductor layer 219.

A reflective electrode layer 230 is formed under the second conductive type semiconductor layer 219. The reflective electrode layer 230 includes at least one of an ohmic contact layer, a reflective layer, a diffusion prevention layer, and a protective layer. Here, the ohmic contact layer is contacted under the second conductive type semiconductor layer 219, and the contact area thereof may be 70% or more of the bottom area of the second conductive type semiconductor layer 219. The ohmic contact layer may include at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide) ZnO, IrOx, RuOx, NiO, Ni, Cr, and their optional compounds or alloys, such as Al2O3, AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SnO, InO, INZnO, , Or at least one layer. The reflective layer may be selected from a material having a reflectance of 70% or more below the ohmic contact layer, for example, a metal of Al, Ag, Ru, Pd, Rh, Pt, or Ir and at least two of the metals. The diffusion preventing layer may be selected from Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta and Ti and alloys of two or more thereof. The diffusion barrier prevents interdiffusion at the boundaries of the different layers. The protective layer may be selected from Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti and alloys of two or more thereof. As shown in FIG.

A light extraction structure such as a roughness may be formed on the surface of at least one of the second conductive type semiconductor layer 219 and the reflective electrode layer 230. Such a light extraction structure may change the critical angle of incident light, , The light extraction efficiency can be improved. The light extracting structure includes a concavo-convex pattern or a structure in which a plurality of projections are formed.

The first insulating layer 221 may be formed under the reflective electrode layer 230. The first insulating layer 221 is formed on the lower surface of the second conductive type semiconductor layer 219 and on the side surfaces of the second conductive type semiconductor layer 219 and the active layer 217, ) Of the first region R1. The first insulating layer 221 is formed in a region of the lower region of the light emitting structure 220 excluding the reflective electrode layer 230, the first electrode 231 and the second electrode 232, 220 are electrically protected.

The first insulating layer 221 includes an insulating material or an insulating resin formed of at least one of oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn and Zr. The above-mentioned insulating resin includes a polyimide material. The first insulating layer 221 may be formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ .

The first insulating layer 221 may be formed of a DBR structure in which first and second layers having different refractive indexes are alternately arranged, and the first layer may be formed of SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ , and the second layer may be formed of any material other than the first layer. In this case, the reflective electrode layer may not be formed.

A first electrode 231 is formed under a partial region R1 of the first conductive semiconductor layer 215. A first junction electrode 233 is disposed under the first electrode 231, A third junction electrode 235 is disposed below the first junction electrode 233. The first electrode 231 may be used as a pad and the first junction electrode 233 and the third junction electrode 235 may be disposed between the first electrode 231 and the first connection electrode 241 And they are bonded to each other. At least one of the first junction electrode 233 and the third junction electrode 235 may not be formed, but the present invention is not limited thereto.

The first electrode 231 may be in contact with the first conductive semiconductor layer 215 in an ohmic contact manner and may be electrically connected to the first junction electrode 233 and the third junction electrode 235.

A portion 233A of the first junction electrode 233 may be further disposed under the first insulation layer 221 disposed under the light emitting structure 220 and the second junction electrode 235 may be further disposed under the first insulation layer 221, A portion 235A of the first junction electrode 233 may be further formed under the portion 235A of the first junction electrode 233 under the light emitting structure 220. [ The width of the first junction electrode 233 and the third junction electrode 235 may be greater than or equal to the width of the first electrode 231 when viewed from the side surface of the light emitting device. The widths of the first bonding electrode 233 and the third bonding electrode 235 may be the same or different.

The first electrode 231 is spaced apart from the side surfaces of the active layer 217 and the second conductivity type semiconductor layer 219 and is in contact with the first electrode 231 in a smaller area than a partial region R1 of the first conductivity type semiconductor layer 215 .

A second electrode 232 may be formed under a portion of the reflective electrode layer 230. A second bonding electrode 234 is disposed under the second electrode 232 and a fourth bonding electrode 236 is disposed under the second bonding electrode 234. [ The second electrode 232 may be used as a pad and the second junction electrode 234 and the fourth junction electrode 236 may be disposed between the second electrode 232 and the second connection electrode 243 And they are bonded to each other. At least one of the second junction electrode 234 and the fourth junction electrode 236 may not be formed, but the present invention is not limited thereto. The first and second connection electrodes 241 and 243 have the same configuration as the connection electrodes disclosed in the other embodiments, and a detailed description thereof will be omitted.

The second electrode 232 may be under the reflective electrode layer 232 and may be electrically connected to the second junction electrode 234 and the fourth junction electrode 236. The width of the second bonding electrode 234 and the fourth bonding electrode 236 may be smaller than or equal to the width of the second electrode 232 when viewed from the side surface of the light emitting device. The widths of the second junction electrode 234 and the fourth junction electrode 236 may be the same or different from each other.

The second electrode 232 may be physically and / or electrically in contact with the second conductive type semiconductor layer 219 through the reflective electrode layer 230. A hole may be formed in the reflective electrode layer 230, and a part of the second electrode 232 may be disposed. The second electrode 232 includes an electrode pad.

The first electrode structures 231, 233, and 235 and the second electrode structures 232, 234, and 236 may have the same layer structure or different layer structures.

At least one of the first electrode 231 and the second electrode 232 may have a current diffusion pattern such as an arm or a finger structure branched from the electrode pad. The first electrode 231 and the second electrode 232 may have one or more electrode pads, but the present invention is not limited thereto. After the first conductive semiconductor layer 215 is exposed through the via structure in the light emitting structure 220, the first electrode 231 may be connected in a via structure. However, the present invention is not limited thereto.

A second insulating layer 223 may be disposed below the third junction electrode 235 and a portion of the second insulating layer 223 may contact the first insulating layer 221. A part of the second insulating layer 223 may be inserted into the open region P2 formed in the first and third junction electrodes 233 and 235 and disposed around the second connection electrode 243. [ Accordingly, the second insulating layer 223 separates the second connecting electrode 243 from the first and third bonding electrodes 233 and 235.

The second insulating layer 223 may be made of the same material as that of the first insulating layer 221 or may be made of another material, but the present invention is not limited thereto. The second insulating layer 223 includes an insulating material or an insulating resin formed of at least one of oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn, and Zr. The above-mentioned insulating resin includes a polyimide material. The second insulating layer 223 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The first insulating layer 221 may be formed as a single layer or a multilayer, but the present invention is not limited thereto.

At least one first connection electrode 241 is disposed below the first electrode structure 231, 233, 235, for example, below the third junction electrode 235. At least one second connection electrode 243 is disposed below the second electrode structure 232, 234, and 236, for example, below the fourth junction electrode 236.

The first connection electrode 241 and the second connection electrode 243 provide a lead function and a heat dissipation path for supplying power. The first connection electrode 241 and the second connection electrode 243 may have a columnar cross-section and may have a shape such as a sphere, a circular column, or a polygonal column or a random shape. Here, the polygonal column may be conformal or non-conformal, but is not limited thereto. The upper surface or lower surface of the first connection electrode 241 and the second connection electrode 243 may include a circular shape or a polygonal shape, but the shape is not limited thereto. The lower surface of the first connection electrode 241 and the second connection electrode 243 may have different areas than the upper surface. For example, the lower surface area may be larger or smaller than the upper surface area.

At least one of the first connection electrode 241 and the second connection electrode 243 may be formed to be smaller than the bottom width of the light emitting structure 220 and larger than the bottom width or diameter of each of the electrodes 231 and 232 .

The first connection electrode 241 and the second connection electrode 243 may have a diameter or width of 1 탆 to 100,000 탆 and a height of 1 탆 to 100,000 탆. The thickness of the first connection electrode 241 may be greater than the thickness of the second connection electrode 243 and the width of the first connection electrode 241 and the second connection electrode 243 may be greater than the thickness of the second connection electrode 243. [ May be disposed on the same plane (i.e., the horizontal plane). The thickness direction of the first and second connection electrodes 241 and 243 may be the thickness direction of each layer of the light emitting structure 220.

The first connection electrode 241 and the second connection electrode 243 may be formed of a single layer using any one metal or alloy, and the width and height of the single layer may be 1 to 100,000 m For example, the thickness of the single layer layer may be greater than the thickness of the second electrode 243.

The first connection electrode 241 and the second connection electrode 243 may be formed of Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Or a selective alloy of metal. The first connection electrode 241 and the second connection electrode 243 may be formed of In, Sn, Ni, Cu, and their alloys for enhancing adhesion to the first electrode 231 and the second electrode 232, Or the like. At this time, the plating thickness is 1 to 100,000 Å.

A plating layer may be further formed on the surfaces of the first connection electrode 241 and the second connection electrode 243. The plating layer may be formed of Tin or an alloy thereof, Ni or an alloy thereof, or a Tin-Ag-Cu alloy. And the thickness thereof may be formed to 0.5 탆 to 10 탆. Such a plating layer can improve bonding with other bonding layers.

The first connection electrode 241 and the second connection electrode 243 may be made of any one of Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, W, and their alloys. The first connection electrode 241 and the second connection electrode 243 may be formed of In, Sn, Ni, Cu, and alloys thereof for adhesion between the first electrode 231 and the second electrode 232. [ And the thickness of the plating layer may be 1 to 100,000 angstroms. The first connection electrode 241 and the second connection electrode 243 may be used as a solder ball or a metal bump, but the invention is not limited thereto.

The first connection electrode 241 and the second connection electrode 243 may be made of any one of Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, W, and their alloys. The first connection electrode 241 and the second connection electrode 243 may be formed of In, Sn, Ni, Cu, and alloys thereof for adhesion between the first electrode 231 and the second electrode 232. [ And the thickness of the plating layer may be 1 to 100,000 angstroms. The first connection electrode 241 and the second connection electrode 243 may be used as a single metal such as a solder ball or a metal bump, but the present invention is not limited thereto.

The supporting member 251 is used as a supporting layer for supporting the light emitting element 162. The support member 251 is formed of an insulating material, and the insulating material is formed of a resin layer such as silicon or epoxy. As another example, the insulating material may include a paste or an insulating ink. The insulating material is selected from the group consisting of polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimides rein, unsaturated polyesters resin, polyphenylene ether resin (PPE), polyphenylene oxide resin (PPO), polyphenylenesulfide resin, cyanate ester resin, benzocyclobutene (BCB), Polyamido-amine Dendrimers (PAMAM), and Polypropylene-imine, Dendrimers (PPI), and PAMAM-internal structures and PAMAM-OS (organosilicon) with organic-silicone outer surfaces alone or combinations thereof . The support member 251 may be formed of a material different from that of the first insulating layer 221.

At least one of compounds such as oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn and Zr may be added to the support member 251. Here, the compound added to the support member 251 may be a heat spreader, and the heat spreader may be used as a powder particle, a grain, a filler, or an additive of a predetermined size. For convenience of explanation, The diffusion agent will be described. Here, the heat spreader may be an insulating material or a conductive material. The size of the heat spreader may be 1 ANGSTROM to 100,000 ANGSTROM and may be 1,000 ANGSTROM to 50,000 ANGSTROM for thermal diffusion efficiency. The particle shape of the heat spreader may include a spherical shape or an irregular shape, but is not limited thereto.

The heat spreader may include a ceramic material. The ceramic material may include a low temperature co-fired ceramic (LTCC), a high temperature co-fired ceramic (HTCC), an alumina, Quartz, calcium zirconate, forsterite, SiC, graphite, fused silica, mullite, cordierite, zirconia, beryllia, ), And aluminum nitride. The ceramic material may be formed of a metal nitride having thermal conductivity higher than that of nitride or oxide among the insulating materials such as nitride or oxide, and the metal nitride may include a material having a thermal conductivity of, for example, 140 W / mK or more. The ceramic material may be, for example, SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , BN, Si ₃ N ₄ , SiC (SiC- CeO 2, AlN, and the like. The thermally conductive material may comprise a component of C (diamond, CNT).

The support member 251 may be formed of a ceramic-based support layer, a polyimide material, or a polyimide material formed under the ceramic substrate support layer. The polyimide is a highly heat resistant material and is stable to heat generated from the light emitting structure 220 and heat transmitted to the bonding process. The polyimide may be provided in the form of a film, but is not limited thereto.

The supporting member 251 may be formed as a single layer or a multilayer, but is not limited thereto. By including the powder of the ceramic material in the support member 251, the strength of the support member 251 can be improved and the thermal conductivity can also be improved.

The heat spreader contained in the support member 251 may be added at a content ratio of about 1 to 99 wt /% and may be added at an amount of 50 to 99 wt% for efficient heat diffusion. By adding the heat spreader to the support member 251, the heat conductivity inside can be further improved. Further, the thermal expansion coefficient of the support member 251 is 4-11 [占 0 ⁶ / 占 폚], and the thermal expansion coefficient has the same or similar thermal expansion coefficient as that of the substrate 211, for example, It is possible to prevent the warp of the wafer or the occurrence of defects due to the difference in thermal expansion from the light emitting structure 220 formed on the light emitting structure 220, thereby preventing the reliability of the light emitting device from deteriorating.

Here, the lower surface area of the support member 251 may be substantially the same as the upper surface of the substrate 211. The bottom surface of the support member 251 may have the same area as the top surface of the first conductive semiconductor layer 215. The width of the lower surface of the support member 251 may be the same as the width of the upper surface of the substrate 211 and the upper surface of the first conductive semiconductor layer 215. The side surfaces of the substrate 211 and the first conductive type semiconductor layer 215 may be disposed on the same plane by forming the supporting member 251 and then separating the supporting member 251 into individual chips .

Also, at least one of the first and second connection electrodes 241 and 243 may be exposed in a plurality of the exposed surfaces of the light emitting chip, but the present invention is not limited thereto. The lower surface of the support member 251 may be formed as a substantially flat surface or an irregular surface, but the present invention is not limited thereto. The thickness of the support member 251 may be in the range of 1 탆 to 100,000 탆, and may be in the range of 50 탆 to 1,000 탆.

The lower surface of the support member 251 is formed lower than the lower surface of the first electrode 231 and the second electrode 232 and the lower surface of the first connection electrode 241 is connected to the lower surface of the second connection electrode 243 (I.e., the horizontal surface) of the lower surface of the substrate (e.g.

The support member 251 is brought into contact with the circumferential surfaces of the first connection electrode 241 and the second connection electrode 243. Accordingly, the heat conducted from the first connection electrode 241 and the second connection electrode 243 can be diffused and radiated through the support member 251. At this time, the thermal conductivity of the support member 251 is improved by the heat spreader, and the heat is radiated through the entire surface. Therefore, the light emitting device 162 can improve reliability by heat.

The side surface of the support member 251 may be disposed on the same plane (that is, the vertical surface) of the light emitting structure 220 and the side surface of the substrate 211.

Most of the light is emitted in the direction of the top surface of the substrate 211 and a part of the light is transmitted through the side surface of the substrate 211 and the side surface of the light emitting structure 220 The light extraction efficiency and the heat radiation efficiency can be improved.

18 to 22 are views showing a seventh embodiment. 18 is a side sectional view of the light emitting device according to the seventh embodiment, Fig. 19 is a plan view of the first body of the light emitting device of Fig. 18, Fig. 20 is a bottom view of the light emitting chip of the light emitting device of Fig. 20 is a cross-sectional view of the light-emitting chip of Fig. 20 on the BB side, and Fig. 22 is a cross-sectional view of the light-emitting chip of Fig. 20 on the CC side. In describing the seventh embodiment, the same parts as the above-described embodiments will be described with reference to the explanations disclosed in the above embodiments.

18 to 22, the light emitting element includes a plurality of lead frames including a first lead frame 321 and a second lead frame 331, and a plurality of second lead frames 321, A second body 351 having an opening 355 and formed on the first body 341 with a material different from that of the first body 341; A light emitting chip 361 disposed in the opening 355 and electrically connected to the first and second lead frames 321 and 331, a light transmitting resin layer 371 covering the light emitting chip 361, (381).

The first and second lead frames 321 and 331 may be formed with coupling structures such as recesses and / or holes, but the present invention is not limited thereto.

The first body 341 is coupled to the first and second lead frames 321 and 331 and has an inclined upper surface 347 of 5 degrees or more. The maximum thickness of the first body 341 may be in a range of 0.2 mm to 0.25 mm from the upper surfaces of the first and second lead frames 121 and 131, May be formed at a lower height than the lower surface of the layer.

The first body 341 may be formed of a material having a reflectivity higher than that of the transmissivity, and the second body 151 may be bonded to the first body 341 using a material having a transmittance higher than that of the first body 341, One embodiment will be referred to. The second body 151 includes the concave-convex structures 354 and 353 for coupling with the optical lens 381, but is not limited thereto.

The first body 141 is disposed on the bottom of the opening 355 of the second body 151 and the first and second lead frames 321 and 331 are exposed by the plurality of contact holes 343 and 344. The plurality of contact holes 343 and 344 are connected to the first and second connection electrodes 365 and 366 through first and second contact electrodes 367 and 368, respectively. The light emitting chip 361 is electrically connected to the first and second lead frames 321 and 331 through the first and second connection electrodes 365 and 366.

The light emitting chip 361 is disposed in the opening 355, and the light transmitting resin layer 371 is filled. The light transmitting resin layer 371 may be doped with a phosphor or a separate phosphor layer may be disposed on the light emitting chip 361. The peripheral side surface 352 of the opening 355 may be formed to be inclined or vertical, but the present invention is not limited thereto.

An optical lens 381 is coupled onto the light transmitting resin layer 371 and the optical lens 381 includes a light exit surface 382 and a total reflection surface 382.

As shown in FIG. 19, the plurality of contact holes 343 and 344 are arranged at predetermined intervals with the gap portion 342 between the first and second lead frames 321 and 331 as a boundary. The gap portion 342 includes a protrusion 337 protruding from the center line of the opening 155 in the direction of the first lead frame 121. The protrusion 337 protrudes from the light emitting chip 361 ) Are separated from each other.

18 and 20, the light emitting chip 361 includes a plurality of second electrodes 441 connected to the first connection electrode 365, and a plurality of first connection electrodes 361 formed around the plurality of second electrodes 441, And a first electrode 439 connected to the electrodes 365 and 366. The plurality of second electrodes 441 are disposed in the inner region of the first electrode 439.

The plurality of second electrodes 441 are arranged in parallel and have a plurality of recesses 441A spaced apart at regular intervals. A portion of the first electrode 439 may be disposed between the plurality of second electrodes 441.

The first electrode 439 is disposed in the entire area of the light emitting chip and includes a bridge electrode 439B disposed between the plurality of second electrodes 441 and the bridge electrode 439B connected to the bridge electrode 439B, And a contact portion 439A disposed in the concave portion 441A of the first housing 441. The concave portion 441A of the second electrode 441 is formed in a hemispherical shape and is not limited thereto. The bridge electrode 439B may be formed to have a lower surface than the upper surface of the first electrode 439 and the second electrode 441, but the present invention is not limited thereto.

21 and 22, the light emitting chip 361 includes a substrate 411, a buffer layer 413, a low conductivity layer 415, a first conductivity type semiconductor layer 421, an active layer 423, A first electrode layer 431, a reflective layer 433, an insulating layer 437, a first electrode 439, and a second electrode 441. The first electrode 431,

The substrate 411 may be formed of a transparent, insulating, or conductive material. For example, the substrate 411 may be formed of a material such as sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, ₂ O ₃ , and LiGaO ₃ may be used. The substrate 411 may have a plurality of protrusions formed on at least one of the upper surface and the lower surface, and the thickness of the protrusions may be in the range of 30 탆 to 300 탆.

A buffer layer 413 may be formed on the substrate 411 and a low conductivity layer 415 may be formed on the buffer layer 413. The low conductivity layer 415 may include an undoped semiconductor layer . A first conductivity type semiconductor layer 421 having an n-type dopant may be formed on the low conductivity layer 415. A first clad layer (not shown) may be formed between the first conductive semiconductor layer 421 and the active layer 423. An active layer 423 is formed on the first conductive semiconductor layer 421 or the first clad layer. The active layer 423 may be formed of at least one of a single well, a single quantum well, a multi-well, a multiple quantum well (MQW), a quantum wire, and a quantum dot structure. A second conductivity type semiconductor layer 425 is formed on the active layer 423 and a p-type dopant is formed on the second conductivity type semiconductor layer 425. The light emitting device may be defined as a light emitting structure layer 420 having a layer structure including the first conductivity type semiconductor layer 421, the active layer 423, and the second conductivity type semiconductor layer 425.

The conductive type of the first conductive type and the second conductive type layers 421 and 425 in the light emitting structure layer 420 may be reversed. The light emitting structure layer 420 may include at least one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure. In the n-p and p-n junctions, an active layer is disposed between two layers, and an n-p-n junction or a p-n-p junction includes at least one active layer between three layers.

A first electrode layer 431, a reflective layer 433, a second electrode layer 435, an insulating layer 437 and a second electrode 441 are disposed on the light emitting structure layer 420 and a second electrode 439 . The first electrode layer 431 may be formed of a material having permeability and electrical conductivity as a current diffusion layer. The first electrode layer 431 may be formed of a transparent electrode layer having a lower refractive index than the refractive index of the compound semiconductor layer. The first electrode layer 431 is formed on the upper surface of the second conductivity type semiconductor layer 425 and includes at least one of a metal oxide and a metal nitride. The first electrode layer 431 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide tin oxide, AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), ZnO, IrOx, RuOx, NiO and the like. For example, the first electrode layer 431 may be formed to have a thickness such that at least one of Al, Ag, Pd, Rh, Pt, and Ir may be thin enough to allow light to pass therethrough. .

A reflective layer 433 is formed on the first electrode layer 431. The reflective layer 433 includes Ag or Al and includes aluminum having a higher reflectance than Ag. can do.

A second electrode layer 345 may be disposed on the reflective layer 4 33 and the second electrode layer 435 may be formed of a metal layer such as a barrier metal layer. The second electrode layer 435 may include at least one of Ti, W, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Or may be formed as a single layer or multiple layers. The second electrode layer 435 may be formed of an alloy such as TiW (Titanium Tungsten), but is not limited thereto. The stacked structure of the first electrode layer 431, the reflective layer 433, and the second electrode layer 435 may be a stacked structure of ITO / Ag / TiW. The first electrode layer 431 may be removed.

21, at least one recess 419 is disposed in the light emitting structure layer 420, and the at least one recess 419 is formed in the light emitting structure layer 420 from the second conductivity type semiconductor layer 425 to the first conductivity type And may be formed to a depth until a part of the semiconductor layer 421 is exposed. A plurality of the recesses 419 may be spaced apart from each other, but the present invention is not limited thereto.

The insulating layer 437 is disposed on the second electrode layer 435 and extends around the recess 419. A hole is formed in the insulating layer 437 disposed in the recess 419 and a portion 439A of the first electrode 440 is disposed in the hole. A portion 439A of the first electrode 439 is physically contacted with the first conductive type semiconductor layer 421 in a via structure.

The insulating layer 437 may be formed on the side wall between the first electrode 439 and the light emitting structure layer 420. The insulating layer 437 includes an insulating material such as an oxide, a nitride, a fluoride, and a sulfide of a material such as Al, Cr, Si, Ti, Zn, or Zr or an insulating resin. The insulating layer 437 may be selectively formed, for example, from SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . The insulating layer 437 may be formed as a single layer or a multilayer, but is not limited thereto.

The insulating layer 444 includes a non-conductive metal compound such as a fluoride metal compound as another material, and may be formed of, for example, M _x F _y . Wherein M comprises at least one of a metal such as Ga, Mg, Al or a transition metal, x ranges from 1 to 3, and y can be 2 or 3. The fluorinated transition metal compound includes MgF ₂ , AlF ₃ , and GaF ₃ .

A first electrode layer 431 is disposed on the light emitting structure layer 420. A reflective layer 433 is disposed on the first electrode layer 431 and a second electrode layer 435 is disposed on the reflective layer 433. [ The reflective layer 433 may cover at least 80% of the upper region of the light emitting structure layer 420, and the adhesive force of the reflective layer 433 may be improved by the adhesive layer. The second electrode layer 435 may be in contact with the side surfaces of the first electrode layer 431 and the reflective layer 433, but the present invention is not limited thereto.

The second electrode 441 may be disposed on the second electrode layer 435 and the second electrode 441 may have one or more arm patterns that are connected to each other. The top surfaces of the first electrode 439 and the second electrode 441 are disposed on substantially the same plane on the light emitting structure layer 420 so that they can be mounted in a flip manner.

The first electrode 439 and the second electrode 441 may be formed of a metal such as Cr, Ti, Co, Ni, V, Hf, Ag, Al, Ru, Rh, Pt, Pd, Ni, Mo, W, And their selective alloys, and may be formed as a single layer or a multilayer. In addition, the first electrode 439 and the second electrode 441 may be formed of the same metal laminated structure, for example, a laminated structure of Cr / NiAl / Au, but the present invention is not limited thereto.

The light emitted from the active layer 423 is reflected by the reflective layer 433 and extracted in the direction of the substrate 411 and the side wall.

The light emitting device according to the embodiment can be applied to an illumination system. The lighting system includes a structure in which a plurality of light emitting elements are arrayed, and includes a display apparatus shown in Figs. 23 and 24, a lighting apparatus shown in Fig. 25, and may include an illumination lamp, a traffic light, a vehicle headlight, have.

23 is an exploded perspective view of the display device according to the embodiment.

23, the display device 1000 includes a light guide plate 1041, a light source module 1031 for providing light to the light guide plate 1041, a reflection member 1022 under the light guide plate 1041, A display panel 1061 on the optical sheet 1051 and a bottom cover 1011 for accommodating the light guide plate 1041, the light source module 1031 and the reflecting member 1022 on the light guide plate 1041 , But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses the light from the light source module 1031 to convert the light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >

The light source module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041 and ultimately serves as a light source of the display device.

At least one light source module 1031 is disposed in the bottom cover 1011 and may directly or indirectly provide light from one side of the light guide plate 1041. [ The light source module 1031 includes a circuit board 1033 and a light emitting element 1035 according to the above-described embodiment. The light emitting element 1035 includes an optical lens coupled to the circuit board 1033, Can be arrayed at intervals. The circuit board may be a printed circuit board, but is not limited thereto. The circuit board 1033 may include a metal core PCB (MCPCB), a flexible PCB (FPCB), or the like, but is not limited thereto. When the light emitting element 1035 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the circuit board 1033 can be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Therefore, heat generated in the light emitting element 1035 can be emitted to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting devices 1035 may be mounted on the circuit board 1033 such that the light emitting surface of the light emitting device 1035 is spaced apart from the light guiding plate 1041 by a predetermined distance. The light emitting device 1035 may directly or indirectly provide light to the light incident portion, which is one side of the light guide plate 1041, but the present invention is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light source module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 transmits or blocks light provided from the light source module 1031 to display information. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The optical path of the light source module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the invention is not limited thereto.

24 is a view showing a display device having a light emitting element according to the embodiment.

24, the display device 1100 includes a bottom cover 1152, a circuit board 1120 on which the light emitting elements 1124 of the above-described embodiment are arrayed, an optical member 1154, and a display panel 1155 .

The light emitting device 1124 coupled with the circuit board 1120 and the optical lens may be defined as a light source module 1160. The bottom cover 1152, the at least one light source module 1160, and the optical member 1154 may be defined as a light unit 1150.

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses the incident light, and the horizontal and vertical prism sheets condense the incident light onto the display panel 1155. The brightness enhancing sheet reuses the lost light to improve the brightness .

The optical member 1154 is disposed on the light source module 1160 and performs surface light source, diffusion, and light condensation of light emitted from the light source module 1160.

25 is an exploded perspective view of a lighting device having a lighting device according to an embodiment.

25, the lighting apparatus according to the embodiment may include a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800 have. Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device according to an embodiment of the present invention.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200 and may be coupled to the heat discharger 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint having a diffusion material. The light from the light source module 2200 can be scattered and diffused to emit to the outside using the milky white material.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light emitting device 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 into which a plurality of illumination elements 2210 and a connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the illumination device 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 may have a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components may include, for example, a DC converter, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protection device for protecting the light source module 2200, The present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. The extension 2670 may be electrically connected to the socket 2800 through a wire.

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10, 100:
21, 31, 121, 131, 321, 331:
41, 141, 341:
51, 151, 351:
61, 161, 162, 361:
71, 171, 172, 173:
81, 181, 381: Optical lens
191, 192:

Claims (20)

A first lead frame including a first engaging hole and a first recess portion, a second lead frame spaced apart from the first lead frame and including a second engaging hole and a second recess portion;
A first body coupled to the first lead frame and the second lead frame;
A second body having an opening and disposed on the first body;
And a light emitting chip disposed in the opening and electrically connected to the first lead frame and the second lead frame,
The first body is formed of a material having a reflectance higher than that of the transmissivity,
The second body may be formed of a material having a higher transmittance than a reflectance,
Wherein the first engaging hole is formed to penetrate the upper surface and the lower surface of the first lead frame and is coupled to a part of the first body, the lower width of the first engaging hole is wider than the upper width, Structure,
Wherein the first recess portion is recessed to a depth lower than an upper surface of the first lead frame so that a portion of the first body is disposed,
The second engagement hole is formed to penetrate the upper surface and the lower surface of the second lead frame and is coupled to a part of the first body, the lower width of the second engagement hole is wider than the upper width, Structure,
Wherein the second recess portion is recessed to a depth lower than an upper surface of the second lead frame to dispose a portion of the first body,
The light transmitting resin layer is disposed in the opening portion, and a part of the light transmitting resin layer extends to the upper surface of the second body,
The height of the upper surface of the translucent resin layer is higher than the height of the opening,
Wherein a portion of the first body disposed in the first recess portion and the second recess portion is disposed at a lower height than an upper surface of the first lead frame and the second lead frame,
Wherein the first recess portion and the second recess portion are provided with a lower end portion around the inner side surface of the second body,
And a lower end around an inner surface of the second body is disposed under the light emitting chip. The method according to claim 1,
Wherein an upper surface of the first body is inclined at a predetermined angle with respect to an upper surface of the first lead frame and the second lead frame. 3. The method of claim 2,
A gap portion is disposed between the first lead frame and the second lead frame,
The gap portion is formed of the material of the first body,
And the width of the top surface of the gap portion is larger than the width of the bottom surface. The method of claim 3,
Wherein the light emitting chip is electrically connected to the first lead frame through a first connection electrode and is electrically connected to the second lead frame through a second connection electrode. 5. The method of claim 4,
A first contact hole through which a part of the first lead frame is exposed and a second contact hole through which a part of the second lead frame is exposed,
Wherein the first connection electrode corresponds to the first contact hole and the second connection electrode corresponds to the second contact hole. The method according to claim 1,
And the depths of the first recess portion and the second recess portion are 50% or less of the thicknesses of the first lead frame and the second lead frame, respectively. 5. The method of claim 4,
And the side surface of the first body protrudes outward from the side surface of the second body. delete delete delete delete delete delete delete delete delete delete delete delete delete

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