KR100964812B1 - Semiconductor light emitting device package - Google Patents

Semiconductor light emitting device package Download PDF

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Publication number
KR100964812B1
KR100964812B1 KR20080095086A KR20080095086A KR100964812B1 KR 100964812 B1 KR100964812 B1 KR 100964812B1 KR 20080095086 A KR20080095086 A KR 20080095086A KR 20080095086 A KR20080095086 A KR 20080095086A KR 100964812 B1 KR100964812 B1 KR 100964812B1
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KR
South Korea
Prior art keywords
light emitting
semiconductor light
emitting device
dam
heat sink
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Application number
KR20080095086A
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Korean (ko)
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KR20100035754A (en
Inventor
김동설
김창태
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주식회사 에피밸리
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Priority to KR20080095086A priority Critical patent/KR100964812B1/en
Publication of KR20100035754A publication Critical patent/KR20100035754A/en
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Abstract

The present disclosure provides a semiconductor light emitting device for generating light; A heat sink configured to discharge heat generated from the semiconductor light emitting device; A lead frame for supplying electricity to the semiconductor light emitting device; A translucent encapsulant disposed on the semiconductor light emitting device; A molded frame for fixing the heat sink and the lead frame, comprising: a molded frame having an internal dam in which the semiconductor light emitting element is located and an external dam in which the translucent encapsulant is positioned; And a hole located in an external dam and fixing the light-transmissive encapsulant in a radial direction and a circumferential direction with respect to the molded frame.

Semiconductor, Light Emitting Device, Package, Phosphor, Encapsulant, Lens, Lead, Frame, Heat, Sink

Description

Semiconductor light emitting device package {SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE}

The present disclosure relates to a semiconductor light emitting device package as a whole, and more particularly, to a package of a semiconductor light emitting device that improves a bonding force between package constituent members such as a light-transmissive encapsulant, a lens, and prevents penetration of gas and moisture.

Here, the semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting device. The group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). In addition, GaAs type semiconductor light emitting elements used for red light emission, etc. are mentioned.

This section provides backgound informaton related to the present disclosure which is not necessarily prior art.

1 is a view showing an example of a semiconductor light emitting device (LED) package described in Korean Patent Publication No. 10-0818518, the heat sink 100, LED 200, LED 200 placed on the heat sink 100 The first lead frame 300 coupled to the heat sink 100 so as to be electrically connected to the heat sink 100, the second lead frame 400 electrically connected to the LED 200 through a bonding wire, the heat sink 100, and the first lead frame 300. Molded frame 500 fixing the first lead frame 300 and the second lead frame 400 and forming the body of the LED package, the phosphor layer 600 is applied only around the LED 200, the phosphor layer 600 An LED package is described that includes a light-transmissive encapsulant 700 that covers the lens, and a lens 800 overlying the light-transmissive encapsulant 700.

2 and 3 are views illustrating an example of the LED package described in US Patent No. 7,427,806, and includes a mold frame 500 for fixing the first lead frame 300 and the second lead frame 400. The LED package including the protrusion 510 and the recess 520 to increase the bonding strength with the light-transmissive encapsulant is described. The LED package includes a protrusion 510 and a concave portion 520 to increase the bonding strength with the light-transmissive encapsulant in the circumferential direction, but there is a limit in increasing the bonding force with the light-transmissive encapsulant in the radial direction.

This will be described later in the Specification for Implementation of the Invention.

This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all, provided that this is a summary of the disclosure. of its features).

According to one aspect of the present disclosure (According to one aspect of the present disclosure), a semiconductor light emitting device for generating light; A heat sink configured to discharge heat generated from the semiconductor light emitting device; A lead frame for supplying electricity to the semiconductor light emitting device; A translucent encapsulant disposed on the semiconductor light emitting device; A molded frame for fixing the heat sink and the lead frame, comprising: a molded frame having an internal dam in which the semiconductor light emitting element is located and an external dam in which the translucent encapsulant is positioned; And a hole located in the external dam and fixing the light-transmissive encapsulant in the radial direction and the circumferential direction with respect to the molded frame.

According to another aspect of the present disclosure (According to one aspect of the present disclosure), a semiconductor light emitting device for generating light; A heat sink configured to discharge heat generated from the semiconductor light emitting device; A lead frame formed integrally with the heat sink and supplying electricity to the semiconductor light emitting device; A translucent encapsulant disposed on the semiconductor light emitting device; A molded frame for fixing the heat sink and the lead frame, comprising: a molded frame having an internal dam in which the semiconductor light emitting element is located and an external dam in which the translucent encapsulant is positioned; And an etched step disposed on an upper surface of the heat sink and for firmly coupling the molded frame.

According to another aspect of the present disclosure (According to one aspect of the present disclosure), a semiconductor light emitting device for generating light; A heat sink configured to discharge heat generated from the semiconductor light emitting device; A lead frame for supplying electricity to the semiconductor light emitting device; A translucent encapsulant disposed on the semiconductor light emitting device; A molded frame for fixing the heat sink and the lead frame, comprising: a molded frame having an internal dam in which the semiconductor light emitting element is located and an external dam in which the translucent encapsulant is positioned; A lens located on the outer dam; Located in the outer dam, the groove for fixing the lens; And a gas and moisture prevention path by the first recess formed by the inner dam, the second recess formed by the inner dam and the outer dam, and the third recess formed by the groove. A semiconductor light emitting device package is provided.

This will be described later in the Specification for Implementation of the Invention.

The present disclosure will now be described in detail with reference to the accompanying drawing (s).

4 is a diagram illustrating an example of an LED package according to the present disclosure, in which a heat sink 10, an LED 20 placed on the heat sink 10, and one side of the LED 20 are electrically connected to each other. The first lead frame 30 integrally formed with the 10, the second lead frame 40 electrically connected to the LED 20 through the bonding wire 21, the heat sink 10, and the first lead frame 30. ) And a transparent frame covering the molded frame 50 forming the body of the LED package, the phosphor layer 60 applied only around the LED 20, and the phosphor layer 60 fixing the second lead frame 40. And a lens 80 overlying the agent 70 and the light-transmissive encapsulant 70.

The molded frame 50 has an internal dam 51 so that the phosphor layer 60 is located only around the LED 20 and an external dam 52 to position the translucent encapsulant 70.

Preferably, the heat sink 10 has a step 11 and a step 12, the step 11 and step 12 improves the coupling force of the heat sink 10 and the molded frame 50. To this end, a portion of the internal dam 51 is formed through the heat sink 10, and serves to electrically insulate the first lead frame 30 and the second lead frame 40. In addition, the heat sink 10 has a step 13 on the upper surface, and the step 13 further strengthens the coupling of the heat sink 10 and the molded frame 50. The step 11, the step 12, and the step 13 can be formed by etching the heat sink 10.

Preferably, the molded frame 50 has a hole 53 in the external dam 52 to improve the cohesion with the light-transmissive encapsulant 70, and the groove 54 for improving the cohesion with the lens 80. ). By providing the holes 53, unlike the protrusions 510 and the recesses 520 of FIG. 2, the coupling force can be improved in both the radial direction and the circumferential direction. Preferably, the outer wall 54b is formed higher than the inner wall 54a of the groove 54, thereby making it possible to more firmly fix the lens 80. At this time, the lens 80 is not a solid lens that is already made, but a substance having thixotropy (change from gel to fluid sol when shaken, but return to gel when stopped) (for example, epoxy). Resin, silicone encapsulant, etc. That is, the lens 80 is formed by dispensing the light-transmissive encapsulant 70, and the groove 54 according to the present disclosure. ) Has a greater meaning. On the other hand, by having the inner dam 51, the outer dam 52 and the groove 54, the penetration path of the gas or moisture is lengthened to bring about the effect of preventing this. That is, the recess 91 formed by the internal dam 51, the recess 92 formed by the internal dam 51 and the external dam 52, and the recess 93 formed by the groove 54. By lengthening the path of gas and moisture to the LED (20) by the), to form a path to prevent their penetration.

5 is a view showing an example of the upper structure of the LED package according to the present disclosure, the outer dam 52 has a circular recess 56 as a whole so that the light-transmissive encapsulant 70 (see FIG. 4) is located, The internal dam 51 is formed symmetrically in a rectangular shape as a whole (this improves moldability in injection molding). The internal dam 51 may have another shape such as circular or hexagon as a whole.

The hole 53 is formed symmetrically along the circumferential direction, which leads to an improvement in uniform coupling.

The groove 54 is formed by the inner wall 54a and the outer wall 54b and has a circular ring shape as a whole. It is possible to more reliably block the gas and the moisture by being formed in a ring shape throughout not the part of the external dam 52.

Reference numeral 57 is an opening in which a protection element for protecting the LED 20 (see FIG. 4) from static electricity is located.

Various embodiments of the present disclosure will be described below.

(1) An LED package comprising means for fixing the position of the translucent encapsulant in the circumferential direction (including circumferential direction if not circular) and in the radial direction to the molded frame forming the LED package body.

(2) An LED package comprising means for securing the lens to a molded frame forming the LED package body.

(3) An LED package having means for preventing the penetration of gas and moisture in a molded frame forming the LED package body.

(4) An LED package having high moldability by molding with a symmetrical dam as a whole in a molded frame forming an LED package body.

(5) An LED package having a step formed in the heat sink through etching to improve bonding to the molded frame.

(6) An LED package in which a plurality of recesses are formed in the LED package body to prevent the penetration of gas and moisture.

According to one semiconductor light emitting device package according to the present disclosure, the bonding force between the molded frame, the light-transmissive encapsulant and / or the lens and the heat sink and / or the lead frame can be improved.

According to one semiconductor light emitting device package according to the present disclosure, it is possible to prevent the penetration of gas and / or moisture into the semiconductor light emitting device.

In addition, according to another semiconductor light emitting device package according to the present disclosure, the moldability between the molded frame, the light-transmissive encapsulant and / or the lens and the heat sink and / or the lead frame can be improved.

1 is a view showing an example of a conventional group III nitride semiconductor light emitting device,

2 and 3 are views showing an example of the LED package described in US Patent No. 7,427,806;

4 is a diagram illustrating an example of an LED package according to the present disclosure;

5 illustrates an example of a superstructure of an LED package according to the present disclosure.

Claims (12)

A semiconductor light emitting device for generating light; A heat sink configured to discharge heat generated from the semiconductor light emitting device; A lead frame for supplying electricity to the semiconductor light emitting device; A translucent encapsulant disposed on the semiconductor light emitting device; A molded frame for fixing the heat sink and the lead frame, comprising: a molded frame having an internal dam in which the semiconductor light emitting element is located and an external dam in which the translucent encapsulant is positioned; And Located in the external dam, a hole for fixing the light-transmissive encapsulant in the radial and circumferential direction with respect to the molded frame; semiconductor light emitting device package comprising a. The method according to claim 1, The lens is fixed to the external dam; further comprising, The external dam has a semiconductor light emitting device package, characterized in that provided with a groove for fixing the lens. The method according to claim 2, The heat sink is integrally formed with the lead frame, the semiconductor light emitting device package, characterized in that it comprises at least one step to secure the coupling with the molded frame. A semiconductor light emitting device for generating light; A heat sink configured to discharge heat generated from the semiconductor light emitting device; A lead frame formed integrally with the heat sink and supplying electricity to the semiconductor light emitting device; A translucent encapsulant disposed on the semiconductor light emitting device; A molded frame for fixing the heat sink and the lead frame, comprising: a molded frame having an internal dam in which the semiconductor light emitting element is located and an external dam in which the translucent encapsulant is positioned; And And an etched step disposed on an upper surface of the heat sink to firmly bond with the molded frame. The method according to claim 4, And a further etched step located on the bottom surface of the heat sink to secure engagement with the molded frame. The method according to claim 4, The lens is fixed to the external dam; further comprising, The external dam has a semiconductor light emitting device package, characterized in that it comprises a ring-shaped groove for fixing the lens. A semiconductor light emitting device for generating light; A heat sink configured to discharge heat generated from the semiconductor light emitting device; A lead frame for supplying electricity to the semiconductor light emitting device; A translucent encapsulant disposed on the semiconductor light emitting device; A molded frame for fixing the heat sink and the lead frame, comprising: a molded frame having an internal dam in which the semiconductor light emitting element is located and an external dam in which the translucent encapsulant is positioned; A lens located on the outer dam; Located in the outer dam, the groove for fixing the lens; And, And a gas and moisture prevention path by the first recess formed by the inner dam, the second recess formed by the inner dam and the outer dam, and the third recess formed by the groove. Light emitting device package. The method of claim 7, The groove is a semiconductor light emitting device package, characterized in that it has a ring shape. The method according to claim 8, The lens is a semiconductor light emitting device package, characterized in that consisting of a thixotropic material. The method according to any one of claims 7 to 9, The groove is a semiconductor light emitting device package, characterized in that consisting of an inner wall having a first height and located close to the semiconductor light emitting device, and an outer wall located farther and having a second height higher than the first height. The method of claim 7, wherein Located in the external dam, a hole for fixing the light-transmissive encapsulant in the radial and circumferential direction with respect to the molded frame; semiconductor light emitting device package comprising a. The method of claim 7, The heat sink is integrally formed with the lead frame, the semiconductor light emitting device package, characterized in that it comprises at least one step to secure the coupling with the molded frame.
KR20080095086A 2008-09-29 2008-09-29 Semiconductor light emitting device package KR100964812B1 (en)

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KR100964812B1 true KR100964812B1 (en) 2010-06-22

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Cited By (3)

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CN102324423A (en) * 2011-07-21 2012-01-18 浙江英特来光电科技有限公司 Integrated COBLED (Chip on Board Light-emitting Diode) encapsulation structure
WO2014137144A1 (en) * 2013-03-04 2014-09-12 유버 주식회사 Chip-on-board uv led package and production method therefor
KR101457806B1 (en) * 2012-06-29 2014-11-03 어드밴스드 옵토일렉트로닉 테크놀로지 인코포레이티드 LED Package and Method of Manufacturing the Same

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KR101724699B1 (en) * 2010-06-23 2017-04-10 엘지이노텍 주식회사 Light emitting apparatus and lighting system
US8878215B2 (en) 2011-06-22 2014-11-04 Lg Innotek Co., Ltd. Light emitting device module
KR101894349B1 (en) * 2011-06-22 2018-09-04 엘지이노텍 주식회사 Light emitting device package and lighting system including the same
KR101641744B1 (en) * 2011-10-07 2016-07-21 엘지이노텍 주식회사 Light emitting device package and backlight unit having the same
KR20130114872A (en) * 2012-04-10 2013-10-21 엘지이노텍 주식회사 Light emitting device package
KR102019498B1 (en) * 2012-10-11 2019-09-06 엘지이노텍 주식회사 Light emitting device and lighting system
KR101997247B1 (en) * 2012-11-14 2019-07-08 엘지이노텍 주식회사 Light emitting device and light apparatus having thereof
KR101375225B1 (en) * 2012-12-28 2014-03-17 주식회사 루멘스 Light emitting device package and backlight unit comprising the same
KR101511032B1 (en) * 2013-09-25 2015-04-10 앰코 테크놀로지 코리아 주식회사 Leadframe for manufacturing LED package and LED package using the same
KR101720285B1 (en) * 2013-12-27 2017-03-28 서울바이오시스 주식회사 Light emitting device
US11677059B2 (en) 2017-04-26 2023-06-13 Samsung Electronics Co., Ltd. Light-emitting device package including a lead frame
KR102335216B1 (en) * 2017-04-26 2021-12-03 삼성전자 주식회사 Light emitting device package

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JP2004087812A (en) 2002-08-27 2004-03-18 Sanyo Electric Co Ltd Light emitting device
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US20060034084A1 (en) 2004-06-28 2006-02-16 Kyocera Corporation Light-emitting apparatus and illuminating apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102324423A (en) * 2011-07-21 2012-01-18 浙江英特来光电科技有限公司 Integrated COBLED (Chip on Board Light-emitting Diode) encapsulation structure
KR101457806B1 (en) * 2012-06-29 2014-11-03 어드밴스드 옵토일렉트로닉 테크놀로지 인코포레이티드 LED Package and Method of Manufacturing the Same
US8981407B2 (en) 2012-06-29 2015-03-17 Advanced Optoelectronic Technology, Inc. Light emitting diode package with lens and method for manufacturing the same
WO2014137144A1 (en) * 2013-03-04 2014-09-12 유버 주식회사 Chip-on-board uv led package and production method therefor

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