KR100964812B1 - Semiconductor light emitting device package - Google Patents
Semiconductor light emitting device package Download PDFInfo
- Publication number
- KR100964812B1 KR100964812B1 KR20080095086A KR20080095086A KR100964812B1 KR 100964812 B1 KR100964812 B1 KR 100964812B1 KR 20080095086 A KR20080095086 A KR 20080095086A KR 20080095086 A KR20080095086 A KR 20080095086A KR 100964812 B1 KR100964812 B1 KR 100964812B1
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- KR
- South Korea
- Prior art keywords
- light emitting
- semiconductor light
- emitting device
- dam
- heat sink
- Prior art date
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Abstract
The present disclosure provides a semiconductor light emitting device for generating light; A heat sink configured to discharge heat generated from the semiconductor light emitting device; A lead frame for supplying electricity to the semiconductor light emitting device; A translucent encapsulant disposed on the semiconductor light emitting device; A molded frame for fixing the heat sink and the lead frame, comprising: a molded frame having an internal dam in which the semiconductor light emitting element is located and an external dam in which the translucent encapsulant is positioned; And a hole located in an external dam and fixing the light-transmissive encapsulant in a radial direction and a circumferential direction with respect to the molded frame.
Semiconductor, Light Emitting Device, Package, Phosphor, Encapsulant, Lens, Lead, Frame, Heat, Sink
Description
The present disclosure relates to a semiconductor light emitting device package as a whole, and more particularly, to a package of a semiconductor light emitting device that improves a bonding force between package constituent members such as a light-transmissive encapsulant, a lens, and prevents penetration of gas and moisture.
Here, the semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting device. The group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). In addition, GaAs type semiconductor light emitting elements used for red light emission, etc. are mentioned.
This section provides backgound informaton related to the present disclosure which is not necessarily prior art.
1 is a view showing an example of a semiconductor light emitting device (LED) package described in Korean Patent Publication No. 10-0818518, the
2 and 3 are views illustrating an example of the LED package described in US Patent No. 7,427,806, and includes a
This will be described later in the Specification for Implementation of the Invention.
This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all, provided that this is a summary of the disclosure. of its features).
According to one aspect of the present disclosure (According to one aspect of the present disclosure), a semiconductor light emitting device for generating light; A heat sink configured to discharge heat generated from the semiconductor light emitting device; A lead frame for supplying electricity to the semiconductor light emitting device; A translucent encapsulant disposed on the semiconductor light emitting device; A molded frame for fixing the heat sink and the lead frame, comprising: a molded frame having an internal dam in which the semiconductor light emitting element is located and an external dam in which the translucent encapsulant is positioned; And a hole located in the external dam and fixing the light-transmissive encapsulant in the radial direction and the circumferential direction with respect to the molded frame.
According to another aspect of the present disclosure (According to one aspect of the present disclosure), a semiconductor light emitting device for generating light; A heat sink configured to discharge heat generated from the semiconductor light emitting device; A lead frame formed integrally with the heat sink and supplying electricity to the semiconductor light emitting device; A translucent encapsulant disposed on the semiconductor light emitting device; A molded frame for fixing the heat sink and the lead frame, comprising: a molded frame having an internal dam in which the semiconductor light emitting element is located and an external dam in which the translucent encapsulant is positioned; And an etched step disposed on an upper surface of the heat sink and for firmly coupling the molded frame.
According to another aspect of the present disclosure (According to one aspect of the present disclosure), a semiconductor light emitting device for generating light; A heat sink configured to discharge heat generated from the semiconductor light emitting device; A lead frame for supplying electricity to the semiconductor light emitting device; A translucent encapsulant disposed on the semiconductor light emitting device; A molded frame for fixing the heat sink and the lead frame, comprising: a molded frame having an internal dam in which the semiconductor light emitting element is located and an external dam in which the translucent encapsulant is positioned; A lens located on the outer dam; Located in the outer dam, the groove for fixing the lens; And a gas and moisture prevention path by the first recess formed by the inner dam, the second recess formed by the inner dam and the outer dam, and the third recess formed by the groove. A semiconductor light emitting device package is provided.
This will be described later in the Specification for Implementation of the Invention.
The present disclosure will now be described in detail with reference to the accompanying drawing (s).
4 is a diagram illustrating an example of an LED package according to the present disclosure, in which a
The molded
Preferably, the
Preferably, the molded
5 is a view showing an example of the upper structure of the LED package according to the present disclosure, the
The
The
Various embodiments of the present disclosure will be described below.
(1) An LED package comprising means for fixing the position of the translucent encapsulant in the circumferential direction (including circumferential direction if not circular) and in the radial direction to the molded frame forming the LED package body.
(2) An LED package comprising means for securing the lens to a molded frame forming the LED package body.
(3) An LED package having means for preventing the penetration of gas and moisture in a molded frame forming the LED package body.
(4) An LED package having high moldability by molding with a symmetrical dam as a whole in a molded frame forming an LED package body.
(5) An LED package having a step formed in the heat sink through etching to improve bonding to the molded frame.
(6) An LED package in which a plurality of recesses are formed in the LED package body to prevent the penetration of gas and moisture.
According to one semiconductor light emitting device package according to the present disclosure, the bonding force between the molded frame, the light-transmissive encapsulant and / or the lens and the heat sink and / or the lead frame can be improved.
According to one semiconductor light emitting device package according to the present disclosure, it is possible to prevent the penetration of gas and / or moisture into the semiconductor light emitting device.
In addition, according to another semiconductor light emitting device package according to the present disclosure, the moldability between the molded frame, the light-transmissive encapsulant and / or the lens and the heat sink and / or the lead frame can be improved.
1 is a view showing an example of a conventional group III nitride semiconductor light emitting device,
2 and 3 are views showing an example of the LED package described in US Patent No. 7,427,806;
4 is a diagram illustrating an example of an LED package according to the present disclosure;
5 illustrates an example of a superstructure of an LED package according to the present disclosure.
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20080095086A KR100964812B1 (en) | 2008-09-29 | 2008-09-29 | Semiconductor light emitting device package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20080095086A KR100964812B1 (en) | 2008-09-29 | 2008-09-29 | Semiconductor light emitting device package |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100035754A KR20100035754A (en) | 2010-04-07 |
KR100964812B1 true KR100964812B1 (en) | 2010-06-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20080095086A KR100964812B1 (en) | 2008-09-29 | 2008-09-29 | Semiconductor light emitting device package |
Country Status (1)
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KR (1) | KR100964812B1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102324423A (en) * | 2011-07-21 | 2012-01-18 | 浙江英特来光电科技有限公司 | Integrated COBLED (Chip on Board Light-emitting Diode) encapsulation structure |
WO2014137144A1 (en) * | 2013-03-04 | 2014-09-12 | 유버 주식회사 | Chip-on-board uv led package and production method therefor |
KR101457806B1 (en) * | 2012-06-29 | 2014-11-03 | 어드밴스드 옵토일렉트로닉 테크놀로지 인코포레이티드 | LED Package and Method of Manufacturing the Same |
Families Citing this family (12)
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KR101724699B1 (en) * | 2010-06-23 | 2017-04-10 | 엘지이노텍 주식회사 | Light emitting apparatus and lighting system |
US8878215B2 (en) | 2011-06-22 | 2014-11-04 | Lg Innotek Co., Ltd. | Light emitting device module |
KR101894349B1 (en) * | 2011-06-22 | 2018-09-04 | 엘지이노텍 주식회사 | Light emitting device package and lighting system including the same |
KR101641744B1 (en) * | 2011-10-07 | 2016-07-21 | 엘지이노텍 주식회사 | Light emitting device package and backlight unit having the same |
KR20130114872A (en) * | 2012-04-10 | 2013-10-21 | 엘지이노텍 주식회사 | Light emitting device package |
KR102019498B1 (en) * | 2012-10-11 | 2019-09-06 | 엘지이노텍 주식회사 | Light emitting device and lighting system |
KR101997247B1 (en) * | 2012-11-14 | 2019-07-08 | 엘지이노텍 주식회사 | Light emitting device and light apparatus having thereof |
KR101375225B1 (en) * | 2012-12-28 | 2014-03-17 | 주식회사 루멘스 | Light emitting device package and backlight unit comprising the same |
KR101511032B1 (en) * | 2013-09-25 | 2015-04-10 | 앰코 테크놀로지 코리아 주식회사 | Leadframe for manufacturing LED package and LED package using the same |
KR101720285B1 (en) * | 2013-12-27 | 2017-03-28 | 서울바이오시스 주식회사 | Light emitting device |
US11677059B2 (en) | 2017-04-26 | 2023-06-13 | Samsung Electronics Co., Ltd. | Light-emitting device package including a lead frame |
KR102335216B1 (en) * | 2017-04-26 | 2021-12-03 | 삼성전자 주식회사 | Light emitting device package |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004087812A (en) | 2002-08-27 | 2004-03-18 | Sanyo Electric Co Ltd | Light emitting device |
US20060034084A1 (en) | 2004-06-28 | 2006-02-16 | Kyocera Corporation | Light-emitting apparatus and illuminating apparatus |
KR100555174B1 (en) | 2003-09-29 | 2006-03-03 | 바이오닉스(주) | Manufacturing method and product of high power type led |
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2008
- 2008-09-29 KR KR20080095086A patent/KR100964812B1/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004087812A (en) | 2002-08-27 | 2004-03-18 | Sanyo Electric Co Ltd | Light emitting device |
KR100555174B1 (en) | 2003-09-29 | 2006-03-03 | 바이오닉스(주) | Manufacturing method and product of high power type led |
US20060034084A1 (en) | 2004-06-28 | 2006-02-16 | Kyocera Corporation | Light-emitting apparatus and illuminating apparatus |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102324423A (en) * | 2011-07-21 | 2012-01-18 | 浙江英特来光电科技有限公司 | Integrated COBLED (Chip on Board Light-emitting Diode) encapsulation structure |
KR101457806B1 (en) * | 2012-06-29 | 2014-11-03 | 어드밴스드 옵토일렉트로닉 테크놀로지 인코포레이티드 | LED Package and Method of Manufacturing the Same |
US8981407B2 (en) | 2012-06-29 | 2015-03-17 | Advanced Optoelectronic Technology, Inc. | Light emitting diode package with lens and method for manufacturing the same |
WO2014137144A1 (en) * | 2013-03-04 | 2014-09-12 | 유버 주식회사 | Chip-on-board uv led package and production method therefor |
Also Published As
Publication number | Publication date |
---|---|
KR20100035754A (en) | 2010-04-07 |
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