KR101568757B1 - Lead frame, light emitting device package, backlight unit, lighting device and its manufacturing method - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame, a light emitting device package, a backlight unit, a lighting device, and a method of manufacturing a light emitting device package that can be used for display or illumination, Preparing a lead frame in which a second electrode is provided on the other side, a first receiving cup is formed on the first electrode, and a second receiving cup is formed on the second electrode; Forming the first bonding medium and the second bonding medium in a solid state in the first accommodating cup portion and the second accommodating cup portion, respectively; Molding a reflective encapsulant into the first bonding medium in solid state and the lead frame in which the second bonding medium is formed; Placing the light emitting element on the lead frame such that the first pad is in contact with the first bonding medium and the second pad is in contact with the second bonding medium; And a second bonding medium, wherein the first pad is electrically and physically rigidly connected to the first bonding medium, and wherein the first bonding medium and the second bonding medium are bonded to each other to electrically and physically connect the second pad to the second bonding medium. And reflowing the bonding medium.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame, a light emitting device package, a backlight unit, a lighting device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame, a light emitting device package, a backlight unit, a lighting device, and a method of manufacturing a light emitting device package. More particularly, And a manufacturing method of the light emitting device package.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to shock and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so that they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

However, in the conventional light emitting device package, when dispensing the solder paste onto the lead frame, it is difficult to precisely supply the solder paste, so that when too little solder paste is applied, the bonding strength between the substrate and the light emitting element is lowered, When the solder paste is applied too much, the solder paste is spread over the electrode dividing line as the solder paste is pressed by the light emitting device when the light emitting device is seated, resulting in a short circuit.

Further, in the conventional light emitting device package, it has been difficult to screen the solder paste by the uneven surface of the reflective encapsulant after molding the reflective encapsulant.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a lead frame, a light emitting device package, a backlight unit, a lighting unit, and the like which simplify a process, improve a bonding property of a bonding medium, And a method of manufacturing the light emitting device package. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a method of manufacturing a light emitting device package, the method comprising: providing a first electrode on one side of the electrode separation space, a second electrode on the other side of the electrode separation space, Preparing a lead frame in which a first accommodating cup portion is formed and a second accommodating cup portion is formed in the second electrode; Forming the first bonding medium and the second bonding medium in a solid state in the first accommodating cup portion and the second accommodating cup portion, respectively; Molding a reflective encapsulant into the first bonding medium in solid state and the lead frame in which the second bonding medium is formed; Placing the light emitting element on the lead frame such that the first pad is in contact with the first bonding medium and the second pad is in contact with the second bonding medium; And a second bonding medium, wherein the first pad is electrically and physically rigidly connected to the first bonding medium, and wherein the first bonding medium and the second bonding medium are bonded to each other to electrically and physically connect the second pad to the second bonding medium. And reflowing the bonding medium.

According to an aspect of the present invention, the step of preparing the lead frame may include etching or pressing the first electrode and the second electrode to form the first accommodating cup portion and the second accommodating cup portion .

According to an aspect of the present invention, before forming the first bonding medium and the second bonding medium in solid state in the first accommodating cup portion and the second accommodating cup portion, The first bonding medium and the second bonding medium in a flowing state are applied through the through holes of the screen corresponding to the second accommodating cup portion and the first bonding medium and the second bonding medium are screen printed by pushing the first bonding medium and the second bonding medium step; And preliminarily reflowing the first bonding medium and the second bonding medium to cure the screen-printed first bonding medium and the second bonding medium.

According to an aspect of the present invention, the step of forming the first bonding medium and the second bonding medium in a solid state in the first accommodating cup portion and the second accommodating cup portion, respectively, The first bonding medium and the second bonding medium may be deposited through the through-holes of the mask corresponding to the second accommodating cup portion.

According to an aspect of the present invention, in the step of molding the reflective encapsulant into the lead frame formed with the first bonding medium and the second bonding medium in a solid state, at the time of molding the reflective encapsulant, The temperature may be higher than the melting temperature of the molding material of the reflective encapsulant and lower than the melting temperature of the first bonding medium and the second bonding medium.

According to an aspect of the present invention, the first pad is electrically connected to the first bonding medium, and the light emitting element is seated on the lead frame so that the second pad can be electrically connected to the second bonding medium Applying the flux to the first pad and the second pad and / or the first bonding medium and the second bonding medium prior to the step.

According to another aspect of the present invention, there is provided a light emitting device package comprising: a light emitting device package;

According to an aspect of the present invention, there is provided a light emitting device package including a light emitting device package manufactured by the manufacturing method according to any one of claims 1 to 6.

According to an aspect of the present invention, there is provided a light emitting device package including a light emitting device package manufactured by the manufacturing method according to any one of claims 1 to 6.

According to another aspect of the present invention, there is provided a lead frame comprising: a first electrode provided on one side of an electrode separation space; A second electrode provided in the other direction with respect to the electrode separation space; A first accommodating cup portion formed concavely in the first electrode; A second receiving cup portion formed concavely in the second electrode; A first bonding medium filled in the first accommodating cup to be in a solid state and having a melting point as high as not melting during molding of the reflective encapsulant; And a second bonding medium having a melting point that is filled in the second accommodating cup portion to be in a solid state and has a melting point that is high enough not to be melted during the molding of the reflective encapsulant.

According to some embodiments of the present invention as described above, the process is simplified by forming a receiving cup portion in the lead frame before molding the reflective encapsulant and screen-printing the solder paste thereon to precisely supply the correct amount, And at the same time, it is possible to prevent a shot. Of course, the scope of the present invention is not limited by these effects.

1 is a perspective view illustrating a lead frame in accordance with some embodiments of the present invention.
2 is an exploded perspective view of a light emitting device package according to some embodiments of the present invention.
3 is a cross-sectional view of a light emitting device package of FIG. 2 taken along line II-II.
4 is a plan view showing a first bonding medium and a second bonding medium of the light emitting device package of FIG.
5 to 8 are plan views showing a first bonding medium and a second bonding medium according to various embodiments of the light emitting device package.
9 to 16 are cross-sectional views illustrating steps of manufacturing the light emitting device package according to some embodiments of the present invention.
17 is a cross-sectional view illustrating a backlight unit according to some embodiments of the present invention.
18 is a cross-sectional view illustrating a manufacturing process of a light emitting device package according to another embodiment of FIG.
19 is a flowchart showing a method of manufacturing a light emitting device package according to some embodiments of the present invention.
20 is a flow chart illustrating a method of manufacturing a light emitting device package according to some other embodiments of the present invention.
21 is a flowchart showing a method of manufacturing a light emitting device package according to still another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified in various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a perspective view showing a lead frame 20 according to some embodiments of the present invention.

1, a lead frame 20 according to some embodiments of the present invention includes a first electrode 21, a second electrode 22, a first receiving cup portion 21a , A second receiving cup portion 22a, a first bonding medium B1 and a second bonding medium B2.

Here, the first electrode 21 may be a part of a lead frame disposed in one direction with respect to the electrode separation space.

In addition, the second electrode 22 may be another portion of the lead frame provided in the other direction with respect to the electrode separation space.

Also, the first accommodating cup portion 21a may be a portion formed concavely in the first electrode 21.

In addition, the second accommodating cup portion 22a may be a portion formed concavely in the second electrode 22.

The first bonding medium B1 is a member filled with the first accommodating cup portion 21a to be in a solid state and having a high melting and melting point that is high enough not to be melted when molding the reflective encapsulant 30, ≪ / RTI >

The second bonding medium may include a solder component filled in the second accommodating cup portion 22a to form a solid state and having a high melting point of melting which is high enough not to be melted during the molding of the reflective encapsulant 30 have.

Here, the first bonding medium B1 is printed with a solder paste or solder cream in a fluid state in the first receiving cup portion 21a and hardened, and the second bonding medium B2 is cured The pattern can be printed and cured with a solder paste or solder cream in a flowing state in the second accommodating cup portion 22a.

In addition, the first bonding medium B1 and the second bonding medium B2 may be in a fluidized state during bonding, as well as in a solder paste or a solder cream, or may be cured upon cooling, The conductive bonding medium may be any hardenable material.

Also, as shown in FIG. 1, the first bonding medium B1 and the second bonding medium B2 may have a rectangular plate shape.

5 to 8 are plan views showing a first bonding medium B1 and a second bonding medium B2 according to various embodiments of the light emitting device package.

In addition, in order to increase the contact area between the lead frame 20 and the bonding media B1 and B2, the first bonding medium B1 and the second bonding medium B2 may be formed as shown in FIG. 5 (Three in the figure) arranged in the row direction, and may be in the form of a plurality of short rectangular plates arranged in the column direction (two in the figure) as shown in Fig. 6 And may be in the form of a plurality of (six in the figure) elongated rectangular plates arranged in the row and column directions as shown in Fig. 7, (14 in the figure) short rectangular plates. In addition, the shapes of the first bonding medium (B1) and the second bonding medium (B2) may vary widely.

1, the lead frame 20 according to some embodiments of the present invention may be formed in such a manner that before the reflective encapsulant 30, which will be described later, is molded, Is printed with a solder paste or a solder cream in a fluid state in the first receiving cup portion 21a and hardened and the second bonding medium B2 flows into the second receiving cup portion 22a Solder paste or solder cream in a state where the pattern is printed and hardened and commercialized.

Therefore, the operator simply purchases the lead frame 20 of the present invention as a product unit, molds the reflective encapsulant 30 thereon, without needing to apply or dispense the solder paste after molding molding as in the prior art, The light emitting device can be mounted and reflowed to complete the light emitting device package.

Therefore, the operator can omit the application or dispensing process of the bonding medium in the line, and can precisely screen-print the solder paste or the solder cream during the production of the lead frame 20 of the present invention, The first bonding medium B1 and the second bonding medium B2 are precisely filled in the cup part 21a and the second accommodating cup part 22a so that no short circuit or short circuit is generated, .

Meanwhile, the lead frame 20 may be a substrate having a first electrode 21 provided on one side of the electrode separation space, and a second electrode 22 provided on the other side of the electrode.

The lead frame 20 may be made of a material or a conductive material having appropriate mechanical strength and insulation that can support or accommodate the light emitting element 10. [

For example, the lead frame 20 may be formed of a metal material such as aluminum, copper, zinc, tin, lead, gold or silver, which is insulated, and may be in the form of a perforated or bent plate.

In addition, a printed circuit board (PCB) in which an epoxy resin sheet is formed in multiple layers in place of the lead frame 20 can be applied. The lead frame 20 may be a Flexible Printed Circuit Board (FPCB) made of a flexible material.

In addition, instead of the lead frame 20, a synthetic resin substrate such as resin or glass epoxy or a ceramic substrate may be used in consideration of thermal conductivity.

In order to improve workability, the lead frame 20 may be made of at least one selected from at least one of EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber and combinations thereof . ≪ / RTI >

2 is a fragmentary exploded perspective view showing a light emitting device package 100 according to some embodiments of the present invention. FIG. 3 is a cross-sectional view showing a II-II cross section of the light emitting device package 100 of FIG. 2, 1 is a plan view showing a first bonding medium B1 and a second bonding medium B2 of the light emitting device package 100 of FIG.

2 to 4, the light emitting device package 100 according to some embodiments of the present invention includes the lead frame 20 of the present invention described above, A lead frame 20, a first bonding medium B1, and a second bonding medium B2.

Here, the light emitting device 10 may be a flip chip type LED (Light Emitting Diode) having a first pad P1 and a second pad P2.

The light emitting device 10 may be formed of a semiconductor, as shown in FIG. For example, LEDs of blue, green, red, and yellow light emission, LEDs of ultraviolet light emission, and LEDs of infrared light emission, which are made of a nitride semiconductor, can be applied. The nitride semiconductor is represented by a general formula Al _x Ga _y In _z N (0? X? 1, 0? Y? 1, 0? Z? 1, x + y + z = 1).

The light emitting device 10 may be formed by epitaxially growing nitride semiconductors such as InN, AlN, InGaN, AlGaN, and InGaAlN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD To grow. The light emitting element 10 may be formed using a semiconductor such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, or AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. Further, the light emitting element 10 can be selected to have an arbitrary wavelength depending on applications such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl 2 O 4, MgO, LiAlO 2, LiGaO 2, GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

In addition, since the silicon (Si) substrate absorbs light generated from the GaN-based semiconductor and the external quantum efficiency of the light emitting device is lowered, the substrate may be removed as necessary, and Si, Ge, SiAl, A support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

Herein, the buffer layer may be made of Al _x In _y Ga _1-xy N (0? X? 1, 0? _Y? 1, x + y? 1), in particular GaN, AlN, AlGaN, InGaN or InGaNAlN. Materials such as ZrB2, HfB2, ZrN, HfN and TiN can also be used as needed. Further, a plurality of layers may be combined, or the composition may be gradually changed.

Although not shown, the light emitting element 10 may be a flip chip type having a signal transmission medium such as a pump or a solder in addition to the pads P1 and P2. In addition, a bonding wire may be applied to the terminal, A light emitting element to which a bonding wire is applied only to the first terminal or a second terminal in part, or a horizontal or vertical type light emitting element can be applied.

The first pad P1 and the second pad P2 may be deformed into various shapes other than the rectangular shape shown in FIG. 2, and may have a finger structure having a plurality of fingers on one arm, for example.

As shown in FIG. 2, the light emitting device 10 may be mounted on the lead frame 20, or a plurality of the light emitting devices 10 may be mounted on the lead frame 20.

2 to 4, a part of the first pad P1 of the light emitting element 10 is in direct contact with the first electrode 21 of the lead frame 20, An inlet width W2 or length W2 of the first accommodating cup portion 21a such that a portion of the second pad P2 of the light emitting element 10 can be in direct contact with the second electrode 22 of the lead frame 20, Is smaller than the width W1 or length of the first pad P1 and the inlet width W2 or length of the second receiving cup portion 22a is less than the width W1 or length of the second pad P2 It can be small.

A part of the first pad P1 of the light emitting element 10 is in direct contact with the first electrode 21 of the lead frame 20 and the second pad P2 of the light emitting element 10 A part of the light emitting element 10 can directly contact the second electrode 22 of the lead frame 20 so that both the side pads P1 and P2 of the light emitting element 10 are directly connected to the lead frame 20 The light emitting element 10 is not tilted or tilted so that the light emitting axis can be accurately aligned.

4, the first accommodating cup portion 21a and the second accommodating cup portion 22a have a footprint of the first pad P1 and the second pad P2, Can be located within the areas A1 and A2.

The rim of the first pad P1 of the light emitting element 10 is in direct contact with the first electrode 21 of the lead frame 20 so that there is no void and the second portion of the light emitting element 10 Since the rim portion of the pad P2 is in direct contact with the second electrode 22 of the lead frame 20 and there is no gap therebetween, the first accommodating cup portion 21a and the second accommodating cup portion 22a are sealed The first bonding medium B1 and the second bonding medium B2 do not leak to the outside of the first accommodating cup portion 21a and the second accommodating cup portion 22a during reflow.

At the same time, it is possible to prevent other phosphors, transparent encapsulant, reflection member, and other molding materials from penetrating into the first and second accommodating cup portions 21a and 22a during reflow .

Of course, it is obvious that the first accommodating cup portion 21a and the second accommodating cup portion 22a are located within the footprint region A3 of the light emitting element 10. [

Herein, for example, the foot pad region of the first pad P1 indicates a region where the first pad P1 is projected onto the lead frame 20 on a plan view, And the bottom surface area occupied on the base 20.

2 to 4, the light emitting device package 100 according to the present invention includes the electrode separation wall 31 formed by filling the electrode separation space, and at the time of mounting the light emitting device, The reflective encapsulant 30 may be formed to have a shape corresponding to the side surface of the light emitting element 10 so that the reflective cup portion 32 may be aligned in a predetermined position.

In the reflective encapsulant 30, the electrode separation wall 31 and the reflection cup portion 32 may be integrally molded by a mold.

In addition, the reflective encapsulant 30 may be formed of an epoxy resin composition, a silicone resin composition, a modified epoxy resin composition, a modified silicone resin composition, a polyimide resin composition, a modified polyimide resin composition, a polyphthalamide (PPA), a polycarbonate resin , A polyphenylene sulfide (PPS), a liquid crystal polymer (LCP), an ABS resin, a phenol resin, an acrylic resin, a PBT resin, a Bragg reflection layer, an air gap, It can be done by selecting more than one.

The reflective encapsulant 30 may be made of at least one selected from the group consisting of EMC including a reflective material, white silicon containing a reflective material, a photoimageable solder resist (PSR), and combinations thereof.

More specifically, for example, the reflective encapsulant 30 may be a silicone resin composition, a modified epoxy resin composition such as a silicone-modified epoxy resin, a modified silicone resin composition such as an epoxy-modified silicone resin, a polyimide resin composition , Modified polyimide resin composition, resin such as polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin and PBT resin have.

It is also possible to add a light reflecting material such as titanium oxide, silicon dioxide, titanium dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, chromium, have.

In addition, as shown in FIG. 16, the filler 40 may be filled in the reflection cup portion 32.

Here, the filler may be selected from at least one selected from the group consisting of silicon, transparent epoxy, phosphor, and combinations thereof, which are relatively small in particle size and dense materials.

In addition, the filler may be selected from the group consisting of EMC, epoxy resin composition, silicone resin composition, modified epoxy resin composition, modified silicone resin composition, polyimide resin composition, modified polyimide resin composition, polyphthalamide PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin and the like.

In addition, the filler may include a phosphor.

Here, the phosphor may have the following composition formula and color.

Oxide system: yellow and green Y3Al5O12: Ce, Tb3Al5O12: Ce, Lu3Al5O12: Ce

(Ba, Sr) 2SiO4: Eu, yellow and orange (Ba, Sr) 3SiO5: Ce

Eu, Sr2Si5N8: Eu, SrSiAl4N7: Eu, Eu3O3: Eu, Eu3O3: Eu,

The composition of the phosphor should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

In addition, the phosphor may include materials such as a quantum dot. The above-mentioned oxides, nitrides, silicates, and QD materials may be used alone or as a mixture of these phosphors.

QD can be composed of a core (3 to 10 nm) such as CdSe and InP, a shell (0.5 to 2 nm) such as ZnS and ZnSe, and a ligand for stabilizing the core and the shell. Can be implemented.

In addition, the application method of the phosphor may be at least one of a method of being applied to an LED chip or a light emitting device, a method of covering the LED chip, a method of covering the LED chip, a method of attaching a sheet form such as a film or a ceramic phosphor.

Dispensing and spray coating are common methods of spraying, and dispensing includes mechanical methods such as pneumatic method and screw, linear type. It is also possible to control the amount of dyeing through a small amount of jetting by means of a jetting method and control the color coordinates thereof. The method of collectively applying the phosphor on the wafer level or the light emitting device substrate by the spray method can easily control productivity and thickness.

The method of directly covering the light emitting device or the LED chip in a film form can be applied by a method of electrophoresis, screen printing or phosphor molding, and the method can be different according to necessity of application of the side of the LED chip.

In order to control the efficiency of the long-wavelength light-emitting phosphor that reabsers light emitted from a short wavelength among two or more kinds of phosphors having different emission wavelengths, two or more kinds of phosphor layers having different emission wavelengths can be distinguished. A DBR (ODR) layer may be included between each layer to minimize absorption and interference.

In order to form a uniform coating film, the phosphor may be formed into a film or ceramic form and then attached onto the LED chip or the light emitting device.

In order to make a difference in light efficiency and light distribution characteristics, a photoelectric conversion material may be located in a remote format. In this case, the photoelectric conversion material is located together with a transparent polymer, glass, or the like depending on its durability and heat resistance.

Since the phosphor coating technique plays a major role in determining the optical characteristics in the light emitting device, control techniques such as the thickness of the phosphor coating layer and the uniform dispersion of the phosphor have been studied variously. QD can also be placed in the LED chip or the light emitting element in the same manner as the phosphor, and can be positioned between the glass or translucent polymer material for light conversion.

17 is a cross-sectional view illustrating a backlight unit 1000 according to some embodiments of the present invention.

17, a backlight unit 1000 according to some embodiments of the present invention includes a light emitting device in the form of a flip chip having a first pad P1 and a second pad P2 A first electrode 21 is provided on one side of the electrode separation space and a second electrode 22 is provided on the other side of the electrode assembly and a lead frame 20 on which the light emitting device 10 is mounted, The first pad P1 and the first electrode 21 are electrically connected to each other so that the first pad P1 of the light emitting element 10 and the first electrode 21 of the lead frame 20 are electrically connected. And the second pad 22 of the lead frame 20 are electrically connected to each other so that the second pad P2 of the light emitting element 10 and the second electrode 22 of the lead frame 20 are electrically connected to each other. (B2) provided between the second electrode (P2) and the second electrode (22) and a light guide plate (50) installed in the optical path of the light emitting element (10) The second electrode 22 of the lead frame 20 is formed with the second accommodating cup portion 22a and the second electrode 22 of the lead frame 20 is formed with the second accommodating cup portion 22a, 1 bonding medium B1 is printed and patterned in a fluid state in the first receiving cup portion 21a so that the second bonding medium B2 is in a fluidized state in the second receiving cup portion 22a The pattern may be printed and cured.

Here, the light emitting device 10, the lead frame 20, the first bonding medium B1, the second bonding medium B2, the first accommodating cup portion 21a, The receiving cup portion 22a may have the same function and configuration as the components of the light emitting device package 100 according to some embodiments of the present invention, as shown in FIG. Therefore, detailed description is omitted.

In addition, the light guide plate 50 may be an optical member that can be made of a light-transmitting material to guide light generated from the light emitting device 10.

The light guide plate 50 may be installed in a path of light generated by the light emitting device 10 to transmit light generated by the light emitting device 10 over a wider area.

The light guide plate 50 may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like , And various light transmitting resin materials may be applied. The light guide plate 50 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

Although not shown, various diffusion sheets, prism sheets, filters, and the like may be additionally provided above the light guide plate 50. In addition, various display panels such as an LCD panel may be installed above the light guide plate 50.

Although not shown, the present invention may include a lighting device including the light emitting device package 100 described above. Here, the components of the lighting apparatus according to some embodiments of the present invention may have the same configuration and functions as those of the above-described light emitting device package of the present invention. Therefore, detailed description is omitted.

9 to 16 are cross-sectional views illustrating steps of manufacturing the light emitting device package 100 according to some embodiments of the present invention.

9 to 16, the manufacturing process of the light emitting device package 100 according to some embodiments of the present invention will be described step by step. First, as shown in FIG. 9, A first electrode 21 is provided in one direction and a second electrode 22 is provided in the other direction and a first receiving cup portion 21a is formed in the first electrode 21, It is possible to prepare the lead frame 20 in which the second accommodating cup portion 22a is formed.

At this time, the first accommodating cup portion 21a and the second accommodating cup portion 22a can be formed by etching or pressing the first electrode 21 and the second electrode 22.

10 to 12, the first bonding medium (B1) and the second bonding medium (B1), which are in a solid state, respectively, are formed in the first accommodating cup portion 21a and the second accommodating cup portion 22a, B2) can be formed.

10, through the through holes Sa of the screen S corresponding to the first accommodating cup portion 21a and the second accommodating cup portion 22a, The medium B1 and the second bonding medium B2 are coated and the first bonding medium B1 and the second bonding medium B2 are bonded to each other by pushing the first bonding medium B1 and the second bonding medium B2, The first bonding medium (B1) and the second bonding medium (B2) are cured so as to cure the screen-printed first bonding medium (B1) and the second bonding medium (B2) The second heater B2 can be preliminarily reflowed by the first heater H1.

18 is a cross-sectional view illustrating a manufacturing process of a light emitting device package according to another embodiment of FIG.

18, instead of the screen printing method, a mask M corresponding to the first accommodating cup portion 21a and the second accommodating cup portion 22a, as illustrated in FIG. 18, It is also possible to deposit the metal ion particles P by sputtering the first bonding medium B1 and the second bonding medium B2 through the through holes Ma of the first bonding medium B1.

13, the reflective encapsulant 30 may be molded by molding on the lead frame 20 in which the first bonding medium B1 and the second bonding medium B2 are formed. have.

At this time, at the time of molding the reflective encapsulant 30, the heating temperature of the mold is higher than the melting temperature of the molding material of the reflective encapsulant 30 and the temperature of the first bonding medium B1 and the second bonding medium B2). ≪ / RTI >

Also, a flux (F) may be applied to the first pad (P1) and the second pad (P2) and / or the first bonding medium (B1) and the second bonding medium .

Therefore, when molding the reflective encapsulant 30, the first bonding medium B1 and the second bonding medium B2 are not melted under the heating temperature environment of the mold, and the shape thereof can be maintained.

14, the first pad P1 is brought into contact with the first bonding medium B1 and the second pad P2 is brought into contact with the second bonding medium B2, The light emitting element 10 can be seated on the lead frame 20.

Next, as shown in FIG. 15, the first pad P1 is electrically and physically connected to the first bonding medium B1, and the second pad P2 is electrically connected to the second bonding medium The first bonding medium B1 and the second bonding medium B2 can be reflowed locally or globally to the second heater H2 so that the first bonding medium B1 and the second bonding medium B2 can be electrically and physically connected to the second bonding medium B2.

At this time, the reflow temperature may be higher than the melting temperature of the first bonding medium (B1) and the second bonding medium (B2).

The first bonding medium B1 and the second bonding medium B2 filled in the first accommodating cup portion 21a and the second accommodating cup portion 22a are electrically and physically connected to the first pad P1) and the second pad (P2). In this process, the above-described fluxes can be vaporized by increasing mutual bonding force.

19 is a flowchart showing a method of manufacturing a light emitting device package according to some embodiments of the present invention.

As shown in FIG. 19, a method of manufacturing a light emitting device package according to some embodiments of the present invention includes the steps of providing a first electrode 21 on one side with respect to an electrode separation space, A lead frame 20 in which a first receiving cup portion 21a is formed on the first electrode 21 and a second receiving cup portion 22a is formed on the second electrode 22, (B1) and the second bonding medium (B2) are formed in the first accommodating cup portion (21a) and the second accommodating cup portion (22a), respectively, A step S3 of molding the reflective encapsulant 30 into the lead frame 20 in which the first bonding medium B1 and the second bonding medium B2 are formed in a solid state; The light emitting element 10 is arranged such that the first pad P1 is in contact with the first bonding medium B1 and the second pad P2 is in contact with the second bonding medium B2, (S4) of placing the first pad (P1) on the lead frame (20), and the first pad (P1) is electrically and physically connected to the first bonding medium Reflowing the first bonding medium B1 and the second bonding medium B2 to the second heater H2 so as to be electrically and physically connected to the second bonding medium B2, S5).

The step S1 of preparing the lead frame 20 may include etching or pressing the first electrode 21 and the second electrode 22 to form the first accommodating cup portion 21a and the second accommodating cup portion 21a, To form the receiving cup portion 22a.

In the step S3 of molding the reflective encapsulant 30 on the lead frame 20 in which the first bonding medium B1 and the second bonding medium B2 are formed in a solid state, The heating temperature of the mold during molding molding of the ash 30 is higher than the melting temperature of the molding material of the reflective encapsulant 30 and lower than the melting temperature of the first bonding medium B1 and the second bonding medium B2 It can be low.

20 is a flow chart illustrating a method of manufacturing a light emitting device package according to some other embodiments of the present invention.

20, a manufacturing method of a light emitting device package according to some other embodiments of the present invention is characterized in that the first and second accommodating cup portions 21a and 22a are formed in the shape of the solid (S) corresponding to the first accommodating cup portion 21a and the second accommodating cup portion 22a before the step (S2) of forming the first bonding medium (B1) and the second bonding medium (B2) (B1) and the second bonding medium (B2) through the through hole (Sa) and pushing the first bonding medium (B1) and the second bonding medium (S6) of screening the bonding medium (B2) and a step (S6) of screen printing the first bonding medium (B1) and the second bonding medium (S7) preliminary reflowing the bonding medium B2 to the first heater H1.

18, the first bonding medium B1 and the second bonding medium B2, which are in a solid state, are provided in the first accommodating cup portion 21a and the second accommodating cup portion 22a, respectively, The forming step S2 is performed to form the first bonding medium B1 and the second bonding medium B2 through the through holes Ma of the mask M corresponding to the first accommodating cup portion 21a and the second accommodating cup portion 22a. And to deposit the metal ion particles (P) by sputtering the second bonding medium (B2).

21 is a flowchart showing a method of manufacturing a light emitting device package according to still another embodiment of the present invention.

As shown in FIG. 21, in a method of manufacturing a light emitting device package according to still another embodiment of the present invention, the first pad P1 is electrically connected to the first bonding medium B1, (P1) before the step (S4) of placing the light emitting element (10) on the lead frame (20) so that the first pad (P2) can be electrically connected to the second bonding medium (B2) And applying a flux (F) to the second pad (P2) and / or the first bonding medium (B1) and the second bonding medium (B2).

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: Light emitting element
20: Lead frame
21: first electrode
22: second electrode
21a: first receiving cup portion
22a: the second receiving cup portion
B1: First bonding medium
B2: Second bonding medium
30: Reflective bag material
S: Screen
Sa: Through hole
R: Pusher
M: Mask
Ma: Through hole
40: packing
50: light guide plate
100: Light emitting device package
1000: Backlight unit

Claims (10)

A first electrode is provided on one side of the electrode separation space, a second electrode is provided on the other side of the electrode, a first receiving cup is formed on the first electrode, a second receiving cup is formed on the second electrode, Preparing a leadframe to be formed;
Forming a first bonding medium and a second bonding medium in a solid state in the first accommodating cup portion and the second accommodating cup portion, respectively;
Molding a reflective encapsulant into the first bonding medium in solid state and the lead frame in which the second bonding medium is formed;
Placing the light emitting element on the lead frame such that a first pad of the light emitting element is in contact with the first bonding medium and a second pad is in contact with the second bonding medium; And
Wherein the first pad is electrically and physically connected to the first bonding medium and the first pad is electrically and physically connected to the first bonding medium and the second pad is electrically and physically connected to the second bonding medium, And reflowing the medium,
The forming of the first bonding medium and the second bonding medium in the solid state in the first accommodating cup portion and the second accommodating cup portion, respectively,
The first bonding medium and the second bonding medium in a flowing state through a through hole of a screen corresponding to the first accommodating cup portion and the second accommodating cup portion and pushing the first bonding medium and the second bonding medium, 2 screen printing the bonding medium; And
Pre-reflowing the first bonding medium and the second bonding medium to cure the screen-printed first bonding medium and the second bonding medium;
Emitting device package. The method according to claim 1,
The step of preparing the lead frame includes:
Wherein the first accommodating cup portion and the second accommodating cup portion are formed by etching or pressing the first electrode and the second electrode. delete delete The method according to claim 1,
In the step of molding the reflective encapsulant into the solid state first bonding medium and the lead frame formed with the second bonding medium,
Wherein the heating temperature of the mold during the molding of the reflective encapsulant is higher than the melting temperature of the molding material of the reflective encapsulant and lower than the melting temperature of the first bonding medium and the second bonding medium . The method according to claim 1,
Before the step of seating the light emitting element on the lead frame so that the first pad is electrically connected to the first bonding medium and the second pad is electrically connected to the second bonding medium,
And applying a flux to the first pad and the second pad and / or the first bonding medium and the second bonding medium. delete delete delete A first electrode provided on one side of the electrode separation space;
A second electrode provided in the other direction with respect to the electrode separation space;
A first accommodating cup portion formed concavely in the first electrode;
A second receiving cup portion formed concavely in the second electrode;
A first bonding medium filled in the first accommodating cup to be in a solid state and having a melting point as high as not melting during molding of the reflective encapsulant; And
A second bonding medium filled in the second accommodating cup to be in a solid state and having a melting point as high as not melting during the molding of the reflective encapsulant;
And a lead frame.

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