KR20190086099A - Light emitting device package - Google Patents

Abstract

The present invention relates to a light emitting element package capable of increasing light extraction efficiency, electrical characteristics, and reliability. According to an embodiment of the present invention, the light emitting element package comprises: first and second frames spaced apart from each other and individually including first and second recesses; a body arranged between the first and second frames; a light emitting element arranged in the body and including first and second bonding units; first and second conductive units individually arranged under the first and second bonding units; and first and second conductive bodies individually arranged in the first and second recesses. According to an embodiment of the present invention, each of the first and second conductive units individually extends from the first and second bonding unit to the first and second recesses. The first and second conductive bodies can be individually arranged between the first and second conductive units and the first and second frames.

Description

[0001] LIGHT EMITTING DEVICE PACKAGE [0002]

The embodiments relate to a semiconductor device package, a method of manufacturing a semiconductor device package, and a light source device.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a Group III-V or Group II-VI compound semiconductor material can be used for a variety of applications such as red, Blue and ultraviolet rays can be realized. In addition, a light emitting device such as a light emitting diode or a laser diode using a Group III-V or Group-VI-VI compound semiconductor material can realize a white light source having high efficiency by using a fluorescent material or combining colors. Such a light emitting device has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environment friendliness compared with conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a Group III-V or Group-VI-VI compound semiconducting material, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. Further, such a light receiving element has advantages of fast response speed, safety, environmental friendliness and easy control of element materials, and can be easily used for power control or microwave circuit or communication module.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diode (LED) lighting devices, automotive headlights, traffic lights, and gas and fire sensors. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

The light emitting device can be provided as a pn junction diode having a characteristic in which electric energy is converted into light energy by using a group III-V element or a group II-VI element in the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, a blue light emitting element, a green light emitting element, an ultraviolet (UV) light emitting element, and a red (RED) light emitting element using a nitride semiconductor are commercially available and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm. It is used for sterilizing and purifying in the wavelength band, short wavelength, Can be used.

 Ultraviolet rays can be divided into UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm) and UV-C (200nm ~ 280nm) in the long wavelength order. UV-A (315nm ~ 400nm) is applied in various fields such as UV curing for industrial use, curing of printing ink, exposure machine, discrimination of counterfeit, photocatalytic disinfection and special illumination (aquarium / ) Area is used for medical use, and UV-C (200nm ~ 280nm) area is applied to air purification, water purification, sterilization products and the like.

On the other hand, a semiconductor device capable of providing a high output has been requested, and a semiconductor device capable of increasing a power by applying a high power source has been studied.

In addition, studies are being made on a method for improving the light extraction efficiency of a semiconductor device and improving the light intensity at a package end in a semiconductor device package. In addition, studies have been made on a method for improving the bonding strength between a package electrode and a semiconductor device in a semiconductor device package.

In addition, studies have been made on a method for reducing the manufacturing cost and improving the manufacturing yield by improving the process efficiency and changing the structure in the semiconductor device package.

Embodiments can provide a semiconductor device package, a method of manufacturing a semiconductor device package, and a light source device capable of improving light extraction efficiency and electrical characteristics.

Embodiments can provide a semiconductor device package, a method of manufacturing a semiconductor device package, and a light source device, which can improve the process efficiency and provide a new package structure to reduce the manufacturing cost and improve the manufacturing yield.

Embodiments can provide a semiconductor device package and a method of manufacturing a semiconductor device package that can prevent a re-melting phenomenon from occurring in a bonding region of a semiconductor device package in a process of re-bonding the semiconductor device package to a substrate or the like have.

A light emitting device package according to an embodiment includes first and second frames spaced apart from each other and including first and second recesses, respectively; A body disposed between the first and second frames; A light emitting device disposed on the body and including first and second bonding portions; First and second conductive parts disposed under the first and second bonding parts, respectively; And first and second conductors respectively disposed in the first and second recesses; Each of the first and second conductive portions extending into the first and second recesses in the first and second bonding portions, respectively, and the first and second conductors extend in the first and second conductive portions, respectively, 2 conductive portion and the first and second frames, respectively.

According to the embodiment, the first and second conductors may be disposed on the side surface and the bottom surface of the first and second conductive portions, respectively.

According to the embodiment, the widths of the first and second bonding portions provided along the long side direction of the light emitting element can be provided larger than the widths of the first and second recesses provided along the long side direction of the light emitting element have.

According to the embodiment, the widths of the first and second conductive parts provided along the long side direction of the light emitting element can be provided smaller than the widths of the first and second recesses.

According to an embodiment, a lower surface of the first and second bonding portions may be disposed at a level equal to or higher than an upper surface of the first and second frames providing the first and second recesses.

According to an embodiment, a portion of the first and second conductors may be disposed between the lower surface of the first and second bonding portions and the upper surface of the first and second frames, respectively.

According to an embodiment, the first and second conductive parts may include at least one material selected from the group consisting of Ag, Au, Cu, Ti, and Ni.

According to the embodiment, the thickness of the first and second conductive parts may be several tens of micrometers to several hundreds of micrometers.

According to an embodiment, the first and second conductive parts and the first and second bonding parts may include different materials.

The light emitting device package according to the embodiment may further include a resin disposed around the first and second bonding portions.

According to the embodiment, the upper surfaces of the first and second conductive portions may be disposed at the same height or higher than the upper surfaces of the first and second frames providing the first and second recesses.

According to the semiconductor device package and the method for fabricating a semiconductor device package according to the embodiments, the light extraction efficiency, electrical characteristics and reliability can be improved.

According to the semiconductor device package and the method for manufacturing a semiconductor device package according to the embodiments, the process efficiency is improved and a new package structure is presented, which is advantageous in that the manufacturing cost can be reduced and the manufacturing yield can be improved.

The semiconductor device package according to the embodiment has an advantage that the reflector can be prevented from being discolored by providing the body with high reflectance, thereby improving the reliability of the semiconductor device package.

According to the semiconductor device package and the method for manufacturing a semiconductor device according to the embodiments, it is possible to prevent the re-melting phenomenon from occurring in the bonding area of the semiconductor device package in the process of re-bonding the semiconductor device package to the substrate .

1 is a plan view of a light emitting device package according to an embodiment of the present invention.
2 is a bottom view of the light emitting device package shown in FIG.
3 is a cross-sectional view taken along line DD of the light emitting device package shown in FIG.
4 is an enlarged cross-sectional view illustrating a recessed region of a light emitting device package according to an embodiment of the present invention.
5 is a view for explaining the arrangement relationship of the first frame, the second frame, the body, and the light emitting device applied to the light emitting device package according to the embodiment of the present invention.
6 is a view illustrating another example of a light emitting device package according to an embodiment of the present invention.
7 is a view showing another example of the light emitting device package according to the embodiment of the present invention.
8 is a plan view illustrating an example of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.
9 is a cross-sectional view along the FF line of the light emitting device shown in Fig.
10 is a plan view illustrating another example of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.
11 is a cross-sectional view taken along line AA of the light emitting device shown in Fig.

Hereinafter, embodiments will be described with reference to the accompanying drawings. In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. In addition, the criteria for the top, bottom, or bottom of each layer will be described with reference to drawings, but the embodiment is not limited thereto.

Hereinafter, a method for fabricating a semiconductor device package and a semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. Hereinafter, a case where a light emitting device is applied as an example of a semiconductor device will be described.

First, referring to FIGS. 1 to 5, a light emitting device package according to an embodiment of the present invention will be described.

FIG. 1 is a plan view of a light emitting device package according to an embodiment of the present invention, FIG. 2 is a bottom view of the light emitting device package shown in FIG. 1, to be.

4 is a cross-sectional view illustrating an enlarged recessed region of a light emitting device package according to an exemplary embodiment of the present invention. FIG. 5 is a cross-sectional view illustrating a first and a second frame, The light emitting device package 100 according to the embodiment may include a package body 110 and a light emitting device 120 as shown in FIGS. 1 to 5 .

For reference, the first resin 130 is not shown in FIG. 1 so that the structure of the package body 110 according to the embodiment can be easily grasped.

The package body 110 may include a first frame 111 and a second frame 112. The first frame 111 and the second frame 112 may be spaced apart from each other.

The package body 110 may include a body 113. The body 113 may be disposed between the first frame 111 and the second frame 112. The body 113 may function as an electrode separation line. The body 113 may be referred to as an insulating member.

The body 113 may be disposed on the first frame 111. In addition, the body 113 may be disposed on the second frame 112.

The body 113 may provide an inclined surface disposed on the first frame 111 and the second frame 112. A cavity C may be provided on the first frame 111 and the second frame 112 by an inclined surface of the body 113. [

According to the embodiment, the package body 110 may be provided with a cavity C, or may be provided with a flat upper surface without a cavity C.

For example, the body 113 may be formed of a material selected from the group consisting of polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide 9T, silicone, epoxy molding compound, And may be formed of at least one selected from the group including silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. In addition, the body 113 may include a high refractive index filler such as TiO ₂ and SiO ₂ .

The first frame 111 and the second frame 112 may be provided as a conductive frame. The first frame 111 and the second frame 112 can stably provide the structural strength of the package body 110 and can be electrically connected to the light emitting device 120.

The light emitting device 120 may include a first bonding portion 121, a second bonding portion 122, a light emitting structure 123, and a substrate 124. [

The light emitting structure 123 may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first bonding portion 121 may be electrically connected to the first conductive semiconductor layer. In addition, the second bonding portion 122 may be electrically connected to the second conductivity type semiconductor layer.

The light emitting device 120 may be disposed on the package body 110. The light emitting device 120 may be disposed on the first frame 111 and the second frame 112. The light emitting device 120 may be disposed in the cavity C provided by the package body 110.

The first bonding portion 121 may be disposed on the lower surface of the light emitting device 120. The second bonding portion 122 may be disposed on the lower surface of the light emitting device 120. The first bonding part 121 and the second bonding part 122 may be spaced apart from each other on the lower surface of the light emitting device 120.

The first bonding part 121 may be disposed on the first frame 111. The second bonding portion 122 may be disposed on the second frame 112.

The first bonding portion 121 may be disposed between the light emitting structure 123 and the first frame 111. The second bonding portion 122 may be disposed between the light emitting structure 123 and the second frame 112.

The first bonding portion 121 and the second bonding portion 122 may be formed of any one selected from the group consisting of Ti, Al, Sn, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, At least one material or alloy selected from the group consisting of Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Or may be formed as a single layer or multiple layers.

Meanwhile, the light emitting device package 100 according to the embodiment may include a first recess R10 and a second recess R20. The first frame 111 may include the first recess R10. The second frame 112 may include the second recess R20.

The first recess R10 may be provided on the upper surface of the first frame 111. [ The first recess R10 may be recessed in a downward direction from an upper surface of the first frame 111. [

The first recess R10 may be disposed below the first bonding portion 121 of the light emitting device 120. [ The first recess R10 may be provided so as to overlap with the first bonding portion 121 of the light emitting device 120. [ The first recess R10 may be provided to overlap with the first bonding portion 121 of the light emitting device 120 in a first direction toward the bottom surface from the top surface of the first frame 111. [ The first bonding portion 121 may be disposed on the first recess R10.

The second recess R20 may be provided on the upper surface of the second frame 112. [ The second recess R20 may be recessed in a downward direction from an upper surface of the second frame 112.

The second recess R20 may be disposed under the second bonding portion 122 of the light emitting device 120. [ The second recess R20 may be provided so as to overlap with the second bonding portion 122 of the light emitting device 120. [ The second recess R20 may be provided in a superimposed manner with the second bonding portion 122 of the light emitting device 120 in a first direction toward the lower surface from the upper surface of the second frame 112. [ The second bonding portion 122 may be disposed on the second recess R20.

The first recess R10 and the second recess R20 may be spaced apart from each other. The first recess R10 and the second recess R20 may be spaced apart from each other below the lower surface of the light emitting device 120. [

According to the embodiment, the width W2 of the first recess R10 may be smaller than the width W1 of the first bonding portion 121. In addition, the width of the upper region of the second recess R20 may be less than or equal to the width of the second bonding portion 122.

The area of the upper region of the first recess R10 may be smaller than the area of the lower surface of the first bonding portion 121. [ The area of the upper region of the second recess R20 may be smaller than the area of the lower surface of the second bonding portion 122. [

For example, the first recess R10 and the second recess R20 may be provided with a width of several tens of micrometers to several hundreds of micrometers.

The first and second frames 111 and 112 may include a support member and a metal layer surrounding the support member.

For example, the first and second frames 111 and 112 may include a Cu layer as a support member, and further include at least one metal layer selected from the group consisting of Ni, Ag, and the like on the surface of the support member .

As will be described later, depending on the type of the light emitting device 120 applied to the light emitting device package 100 according to the embodiment, the widths or diameters of the first and second bonding portions 121 and 122 may be several tens of micrometers To several hundred micrometers.

The light emitting device package 100 according to the embodiment may include a first conductive portion 221 and a second conductive portion 222. In addition, the light emitting device package 100 according to the embodiment may include the first conductor 321 and the second conductor 322. The first conductor 321 may be spaced apart from the second conductor 322.

The first conductive part 221 may be disposed under the first bonding part 121. The first conductive part 221 may be electrically connected to the first bonding part 121. The first conductive part 221 may be disposed to overlap the first bonding part 121 in the first direction.

The first conductive part 221 may be provided in the first recess R10. The first conductive portion 221 may be disposed between the first bonding portion 121 and the first conductive body 321. The first conductive portion 221 may be electrically connected to the first bonding portion 121 and the first conductive body 321.

The lower surface of the first conductive part 221 may be disposed lower than the upper surface of the first recess R10. The lower surface of the first conductive part 221 may be disposed lower than the upper surface of the first conductive part 321.

The first conductive part 221 may be disposed on the first recess R10. The first conductive part 221 may extend from the lower surface of the first bonding part 121 to the inside of the first recess R10.

The second conductive part 222 may be disposed under the second bonding part 122. The second conductive part 222 may be electrically connected to the second bonding part 122. The second conductive part 222 may be disposed to overlap with the second bonding part 122 in the first direction.

The second conductive part 222 may be provided in the second recess R20. The second conductive part 222 may be disposed between the second bonding part 122 and the second conductive part 322. The second conductive part 222 may be electrically connected to the second bonding part 122 and the second conductive part 322.

The lower surface of the second conductive part 222 may be disposed lower than the upper surface of the second recess R20. The lower surface of the second conductive part 222 may be disposed lower than the upper surface of the second conductive part 322.

The second conductive part 222 may be disposed on the second recess R20. The second conductive part 222 may extend from the lower surface of the second bonding part 122 to the inside of the second recess R20.

According to an embodiment, the first conductor 321 may be disposed on a lower surface and a side surface of the first conductive portion 221. The first conductor 321 may be disposed in direct contact with a lower surface and a side surface of the first conductive portion 221.

In addition, according to the embodiment, the second conductor 322 may be disposed on a lower surface and a side surface of the second conductive portion 222. The second conductor 322 may be disposed in direct contact with a lower surface and a side surface of the second conductive portion 222.

The first conductor 321 may be provided in the first recess R10. The first conductor 321 may be disposed under the first bonding portion 121. The second conductor 322 may be provided in the second recess R20. The second conductor 322 may be disposed under the second bonding portion 122.

According to the light emitting device package of this embodiment, the first and second conductive parts 221 and 222 and the first and second conductive parts 321 and 322 and the first and second bonding parts 121 and 122 can be more stably provided.

The first and second bonding portions 121 and 122 may have a width W1 in a second direction perpendicular to the first direction in which the first and second recesses R10 and R20 are concave. The width W1 of the first and second bonding portions 121 and 122 may be greater than the width W2 of the first and second recesses R10 and R20 in the second direction. The width W3 of the first and second conductive portions 221 and 222 may be smaller than the width W2 of the first and second recesses R10 and R20 in the second direction have.

According to an embodiment of the present invention, after the first and second conductors 321 and 322 are provided to the first and second recesses R10 and R20, respectively, And can be disposed and attached on the frame 111, 112. The first and second conductive parts 221 and 222 may be arranged in the first and second recesses R10 and R20 respectively and the first and second conductive parts 321 and 322 May be in contact with the lower surface and side surfaces of the first and second conductive parts 221 and 222.

The first and second conductors 321 and 322 may be diffused and moved along the sides of the first and second conductive portions 221 and 222 and the first and second conductors 321 and 322 may be formed of a conductive material, A portion of the first and second frames 111 and 112 may be diffused to the upper surface region of the first and second frames 111 and 112. A portion of the first and second conductors 321 and 322 may be disposed between the first and second bonding portions 121 and 122 and the upper surfaces of the first and second frames 111 and 112, have.

The first conductor 321 may be disposed in direct contact with the lower surface of the first bonding portion 121. The first conductor 321 may be electrically connected to the first bonding portion 121. The first conductor (321) may be arranged to be surrounded by the first frame (111).

The second conductor 322 may be disposed in direct contact with the lower surface of the second bonding portion 122. The second conductor 322 may be electrically connected to the second bonding portion 122. The second conductor (322) may be disposed to be surrounded by the second frame (112).

For example, the first and second conductive parts 221 and 222 may be stably bonded to the first and second bonding parts 121 and 122 through separate bonding materials, respectively. The side surfaces and the bottom surfaces of the first and second conductive portions 221 and 222 may be in contact with the first and second conductors 321 and 322, respectively.

The first and second conductive parts 221 and 222 may be provided to the first and second bonding parts 121 and 122 through a plating process. For example, a seed layer is provided to the first and second bonding portions 121 and 122 at a wafer level where a plurality of light emitting elements are formed, a mask layer such as a photoresist film is formed on the seed layer, The process can be carried out. After the plating process is performed, the first and second conductive portions 221 and 222 may be formed only in a predetermined region of the first and second bonding portions 121 and 122 through removal of the photoresist film.

For example, the first and second conductive parts 221 and 222 may be formed as a single layer or a multilayer including at least one material selected from the group consisting of Ag, Au, Cu, Ti, Ni and the like. In addition, the first and second conductive parts 221 and 222 may include the seed layer. The seed layer may be formed as a single layer or multiple layers including at least one material selected from the group including, for example, Ti, Ni, Cu, and the like.

The first and second conductive parts 221 and 222 may be provided in a circular column shape or a polygonal column shape, for example. The shapes of the first and second conductive parts 221 and 222 may be selected corresponding to the shapes of the upper regions of the first and second recesses R10 and R20. The width or diameter of the first and second conductive parts 221 and 222 may be smaller than the width or diameter of the upper region of the first and second recesses R10 and R20.

For example, the widths or diameters of the first and second conductive parts 221 and 222 may be several tens of micrometers to several hundreds of micrometers. In addition, the thickness of the first and second conductive parts 221 and 222 may be several tens of micrometers to several hundreds of micrometers.

As an example, the first and second conductive portions 221 and 222 may be provided with a width or a diameter of 130 micrometers to 170 micrometers, and the widths or diameters of the first and second conductive portions 221 and 222 The thickness may be from 60 micrometers to 100 micrometers.

The width of the first and second recesses R10 and R20 or the width of the first and second recesses R10 and R20 must be set so that the first and second conductive portions 221 and 222 are inserted into the first and second recesses R10 and R20, The diameter may be several tens of micrometers to several hundreds of micrometers larger than the width or diameter of the first and second conductive parts 221 and 222 in consideration of process errors and the like.

For example, the width or diameter of the first and second recesses R10 and R20 is 100 to 200 micrometers larger than the width or diameter of the first and second conductive parts 221 and 222 Can be provided. The width or diameter of the first and second recesses R10 and R20 may be 1.5 to 2.5 times larger than the width or diameter of the first and second conductive parts 221 and 222 have.

The upper surfaces of the first and second conductive parts 221 and 222 may include a flat surface. The side surfaces of the first and second conductive parts 221 and 222 may include inclined surfaces. In addition, the first and second conductive parts 221 and 222 may have different areas of the upper area and the lower area. For example, the area of the upper area of the first and second conductive parts 221 and 222 may be larger than the area of the lower area.

The first and second conductive parts 221 and 222 and the first and second bonding parts 121 and 122 may be formed of different materials in a separate process. Accordingly, the first and second conductive parts 221 and 222 and the first and second bonding parts 121 and 122 may include different materials and different lamination structures.

The first and second conductors 321 and 322 may be formed on the bottom surfaces of the first and second bonding portions 121 and 122 without providing the first and second conductive portions 221 and 222, The areas where the first and second conductors 321 and 322 are in contact with the first and second conductive parts 221 and 222 can be larger than in the case where they are directly in contact with each other. Accordingly, power is supplied from the first and second conductors 321 and 322 to the first and second bonding portions 121 and 122 through the first and second conductive portions 221 and 222, As shown in FIG.

The first conductor 321 and the second conductor 322 may include at least one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, and the like, or an alloy thereof. However, the present invention is not limited thereto, and the first conductor 321 and the second conductor 322 may be formed of a material capable of ensuring a conductive function.

For example, the first conductor 321 and the second conductor 322 may be formed using a conductive paste. The conductive paste may include a solder paste, a silver paste, or the like, and may be composed of a multi-layer or an alloy composed of different materials or a single layer. For example, the first conductor 321 and the second conductor 322 may include a SAC (Sn-Ag-Cu) material.

According to the embodiment, in the process of providing the first and second conductors 321 and 322 or in the post-heat treatment process in which the first and second conductors 321 and 322 are provided, An intermetallic compound (IMC) layer may be formed between the first and second frames 321 and 322 and the first and second frames 111 and 112.

For example, an intermetallic compound layer may be formed by bonding between the first and second conductors 321 and 322 and the first and second frames 111 and 112.

Accordingly, the first and second conductors 321 and 322 and the first and second frames 111 and 112 can be physically and electrically coupled to each other stably.

For example, the intermetallic compound layer may include at least one metal layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by a combination of a first material and a second material, and a first material may be provided from the first and second conductors 321 and 322, And second frames 111 and 112, respectively.

According to the embodiment, the intermetallic compound layer may be provided to a thickness of several micrometers. For example, the intermetallic compound layer may be formed to a thickness of 1 micrometer to 3 micrometers.

When the first and second conductors 321 and 322 include a Sn material and the first and second frames 111 and 112 include an Ag material, the first and second conductors 321 and 322 may be formed of Ag, 322 may be provided or a heat treatment may be performed after the intermetallic compound layer of AgSn is formed by the combination of the Sn material and the Ag material.

In addition, when the first and second conductors 321 and 322 include a Sn material and the first and second frames 111 and 112 include an Au material, the first and second conductors The intermetallic compound layer of AuSn may be formed by the combination of the Sn material and the Au material in the process of providing the electrode material 321, 322 or after the heat treatment.

Also, when the first and second conductors 321 and 322 include a Sn material and the first and second frames 111 and 112 include a Cu material, the first and second conductors The intermetallic compound layer of CuSn may be formed by the combination of the Sn material and the Cu material in the process of providing the first electrode layer 321 or 322 or the heat treatment process after the second electrode layer 321 or 322 is provided.

In addition, when the first and second conductors 321 and 322 include Ag material and the first and second frames 111 and 112 include a Sn material, the first and second conductors 321 and 322 are provided, or an intermetallic compound layer of AgSn may be formed by a combination of the Ag material and the Sn material during the heat treatment process after the process.

The intermetallic compound layer described above can have a higher melting point than a general bonding material. In addition, the heat treatment process in which the intermetallic compound layer is formed can be performed at a lower temperature than the melting point of a common bonding material.

Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main substrate through a reflow process, re-melting phenomenon does not occur, so that electrical connection and physical bonding force are not deteriorated There are advantages.

According to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.

As a result, the selection range for the material constituting the body 113 can be widened. According to the embodiment, the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.

For example, the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.

On the other hand, according to the embodiment, the first and second An intermetallic compound layer may also be formed between the bonding portions 121 and 122 and the first and second conductors 321 and 322.

The first and second conductors 321 and 322 and the first and second conductors 321 and 322 are provided in the heat treatment process after the first and second conductors 321 and 322 are provided, And an intermetallic compound (IMC) layer may be formed between the first and second bonding portions 121 and 122.

For example, an alloy layer may be formed by bonding between the first and second conductors 321 and 322 and the first and second bonding portions 121 and 122.

Accordingly, the first conductor 321 and the first bonding portion 121 can be physically and electrically coupled more stably. The first conductor 321, the alloy layer, and the first bonding portion 121 can be physically and electrically coupled to each other in a stable manner.

In addition, the second conductor 322 and the second bonding portion 122 can be physically and electrically coupled more stably. The second conductor 322, the alloy layer, and the second bonding portion 122 can be physically and electrically coupled stably.

For example, the alloy layer may include at least one intermetallic compound layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by a combination of a first material and a second material, and a first material may be provided from the first and second conductors 321 and 322, And the second bonding portions 121 and 122, respectively.

According to the embodiment, the intermetallic compound layer may be provided to a thickness of several micrometers. For example, the intermetallic compound layer may be formed to a thickness of 1 micrometer to 3 micrometers.

When the first and second conductors 321 and 322 include a Sn material and the first and second bonding portions 121 and 122 include an Ag material, the first and second conductors 321 and 322 , 322) is provided, an intermetallic compound layer of AgSn can be formed by the bonding of the Sn material and the Ag material in the heat treatment process.

When the first and second conductors 321 and 322 include a Sn material and the first and second bonding portions 121 and 122 include an Au material, The intermetallic compound layer of AuSn can be formed by the combination of the Sn material and the Au material in the heat treatment process after the first and second electrodes 321 and 322 are provided.

When the first and second conductors 321 and 322 include an Ag material and the first and second bonding portions 121 and 121 include a Sn material, The intermetallic compound layer of AgSn can be formed by the bonding of the Ag material and the Sn material in the heat treatment process after the intermetallic compound layers 321 and 322 are provided.

The intermetallic compound layer described above can have a higher melting point than a general bonding material. In addition, the heat treatment process in which the metal compound layer is formed can be performed at a lower temperature than the melting point of a general bonding material.

Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main substrate through a reflow process, re-melting phenomenon does not occur, so that electrical connection and physical bonding force are not deteriorated There are advantages.

On the other hand, according to the embodiment, the first and second An intermetallic compound layer may also be formed between the conductive parts 221 and 222 and the first and second conductors 321 and 322.

The first and second conductors 321 and 322 and the first and second conductors 321 and 322 are provided in the heat treatment process after the first and second conductors 321 and 322 are provided, And an intermetallic compound (IMC) layer may be formed between the second conductive parts 221 and 222.

For example, an alloy layer may be formed by coupling between the material of the first and second conductors 321 and 322 and the first and second conductive parts 221 and 222.

Accordingly, the first conductor 321 and the first conductor 221 can be physically and electrically coupled more stably. The first conductor 321, the alloy layer, and the first conductive part 221 can be physically and electrically coupled to each other in a stable manner.

In addition, the second conductor 322 and the second conductor 222 can be physically and electrically coupled more stably. The second conductor 322, the alloy layer, and the second conductive part 222 can be physically and electrically coupled to each other in a stable manner.

For example, the alloy layer may include at least one intermetallic compound layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by a combination of a first material and a second material, and a first material may be provided from the first and second conductors 321 and 322, And second conductive portions 221 and 222, respectively.

According to the embodiment, the intermetallic compound layer may be provided to a thickness of several micrometers. For example, the intermetallic compound layer may be formed to a thickness of 1 micrometer to 3 micrometers.

When the first and second conductors 321 and 322 include a Sn material and the first and second conductive portions 221 and 222 include Ag material, the first and second conductive materials 321 and 322 , 322) is provided, an intermetallic compound layer of AgSn can be formed by the bonding of the Sn material and the Ag material in the heat treatment process.

When the first and second conductors 321 and 322 include a Sn material and the first and second conductive parts 221 and 222 include an Au material, The intermetallic compound layer of AuSn can be formed by the combination of the Sn material and the Au material in the heat treatment process after the first and second electrodes 321 and 322 are provided.

When the first and second conductors 321 and 322 include an Ag material and the first and second conductive parts 221 and 222 include a Sn material, The intermetallic compound layer of AgSn can be formed by the bonding of the Ag material and the Sn material in the heat treatment process after the intermetallic compound layers 321 and 322 are provided.

The intermetallic compound layer described above can have a higher melting point than a general bonding material. In addition, the heat treatment process in which the metal compound layer is formed can be performed at a lower temperature than the melting point of a general bonding material.

Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main substrate through a reflow process, re-melting phenomenon does not occur, so that electrical connection and physical bonding force are not deteriorated There are advantages.

The light emitting device package 100 according to the embodiment may include the first resin 130.

The first resin 130 may be disposed between the body 113 and the light emitting device 120. The first resin 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120.

In the light emitting device package 100 according to the embodiment, the first resin 130 may be provided between the lower surface of the light emitting device 120 and the upper surface of the package body 110. The first resin 130 may be provided around the first and second bonding portions 121 and 122 when viewed from the upper direction of the light emitting device 120. The first resin 130 may be provided around the first and second openings R10 and R20 when viewed from above the light emitting device 120. [

The first resin 130 may function to stably fix the light emitting device 120 to the package body 110. The first resin 130 may be disposed around the first and second bonding portions 121 and 122 in contact with the side surfaces of the first and second bonding portions 121 and 122.

The first resin 130 may seal the periphery of the first bonding part 121 and the second bonding part 122. The first resin 130 may be formed such that the first conductor 321 and the second conductor 322 are out of the first recess R10 region and the second recess R20 region, And can be prevented from being diffused and moved outwardly in the direction of the outer surface of the body 120.

When the first and second conductors 321 and 322 are diffused and moved in the outer surface direction of the light emitting device 120, the first and second conductors 321 and 322 are electrically connected to the light emitting device 120 It is possible to contact the active layer and cause a failure due to a short circuit. Therefore, when the first resin 130 is disposed, a short circuit between the first and second conductors 321 and 322 and the active layer can be prevented, thereby improving the reliability of the light emitting device package according to the embodiment.

The first resin 130 may be disposed between the first bonding portion 121 and the second bonding portion 122. For example, the first resin 130 may be disposed in contact with a side surface of the first bonding portion 121 and a side surface of the second bonding portion 122.

The first resin 130 may be formed such that the first conductor 321 and the second conductor 322 are out of the first recess R10 region and the second recess R20 region, Can be prevented from being diffused and moved in the direction of the body 113 from below the lower surface of the body 120. Accordingly, it is possible to prevent the first conductor 321 and the second conductor 322 from being electrically short-circuited under the light emitting device 120.

The first resin 130 may include an adhesive function. The first resin 130 may provide an adhesive force to neighboring components. The first resin 130 may be referred to as an adhesive.

The first resin 130 may provide a stable fixing force between the light emitting device 120 and the package body 110. The first resin 130 may provide a stable fixing force between the light emitting device 120 and the body 113. The first resin 130 may be placed in direct contact with the upper surface of the body 113, for example. Also, the first resin 130 may be disposed in direct contact with the lower surface of the light emitting device 120.

For example, the first resin 130 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material . Also, as an example, when the first resin 130 includes a reflection function, the first resin 130 may include a white silicone.

The first resin 130 may provide a stable clamping force between the body 113 and the light emitting device 120. When the light is emitted to the lower surface of the light emitting device 120, And a light diffusing function may be provided between the body 113 and the body 113. When the light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the first resin 130 provides a light diffusion function to improve the light extraction efficiency of the light emitting device package 100 have. In addition, the first resin 130 may reflect light emitted from the light emitting device 120. When the first resin 130 includes a reflection function, the first resin 130 may be formed of a material including TiO ₂ , SiO ₂ , and the like.

According to the embodiment, the first and second conductors 321 and 322 are provided to the first and second recesses R10 and R20, and the upper surface of the first and second frames 111 and 112 The light emitting device 120 may be attached to the package body 110 after the first resin 130 is provided on the upper surface of the body 113. [

The first and second bonding portions 121 and 122 are respectively disposed on the first and second recesses R10 and R20 and the first and second conductive portions 221 and 222 are formed on the first and second conductive portions 221 and 222, Respectively, in the second recesses R10 and R20.

Accordingly, the first and second conductors 321 and 322 can be moved along the side surfaces of the first and second conductive parts 221 and 222, The first and second bonding parts 121 and 122 may be wrapped around the first bonding part 121 and the second bonding part 122 under the first bonding part 120. According to the embodiment, the first resin 130 and the first and second conductors 321 and 322 may be simultaneously cured.

The physical properties of the first resin 130 may be selected in consideration of CTE (Coefficient of Thermal Expansion) matching between the first resin 130, the package body 110, and the light emitting device 120 . The first resin 130 may be selected from resins having low CTE values. At this time, the first resin 130 may be referred to as an LCBR (Low CTE bottom reflector), and the problem of cracking or peeling due to thermal shock can be solved.

In addition, the light emitting device package 100 according to the embodiment may include a molding part 140, as shown in FIGS. 1 to 5.

The molding part 140 may be provided on the light emitting device 120. The molding part 140 may be disposed on the first frame 111 and the second frame 112. The molding part 140 may be disposed in the cavity C provided by the package body 110.

The molding part 140 may include an insulating material. The molding unit 140 may include wavelength conversion means for receiving light emitted from the light emitting device 120 and providing wavelength-converted light. For example, the molding part 140 may include at least one selected from the group including phosphors, quantum dots, and the like.

Meanwhile, the light emitting device package according to the embodiment may further include a recess R provided on the upper surface of the body 113.

The recess R may be provided between the first recess R10 and the second recess R20. The recess R may be recessed in a first direction from the upper surface to the lower surface of the body 113. The recess R may be disposed below the light emitting device 120. The recess R may be provided to overlap with the light emitting device 120 in the first direction.

By way of example, the first resin 130 may be disposed in the recess R. The first resin 130 may be disposed between the light emitting device 120 and the body 113.

The recess R may provide a suitable space under which an under-fill process may be performed under the light emitting device 120. The underfill process may be a process of mounting the light emitting device 120 on the package body 110 and then disposing the first resin 130 on the lower portion of the light emitting device 120, The first resin 130 may be disposed on the recess R to be mounted on the first resin 130 in the step of mounting the element 120 on the package body 110, As shown in FIG. The recess R may be provided at a first depth or more so as to sufficiently provide the first resin 130 between the lower surface of the light emitting device 120 and the upper surface of the body 113. [ In addition, the recesses R may be provided at a second depth or less to provide stable strength of the body 113.

Further, according to the embodiment, the light emitting structure 123 may be provided as a compound semiconductor. The light emitting structure 123 may be formed of, for example, a Group 2-VI-VI or Group III-V compound semiconductor. For example, the light emitting structure 123 may include at least two elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As) .

The light emitting structure 123 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.

The first and second conductivity type semiconductor layers may be formed of at least one of Group III-V-Vs or Group V-VIs compound semiconductors. The first and second conductivity type semiconductor layers are formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -xy} N (0? X? 1, 0? _Y? 1, 0? _X + y? . For example, the first and second conductive semiconductor layers may include at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, . The first conductive semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se or Te. The second conductive semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr or Ba.

The active layer may be formed of a compound semiconductor. The active layer may be implemented, for example, in at least one of Group 3-Group-5 or Group-6-Group compound semiconductors. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of alternately arranged well layers and a plurality of barrier layers, and may be In _x Al _y Ga _{1 -x- y} N , 0? Y? 1, 0? X + y? 1). For example, the active layer may be selected from the group consisting of InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / InGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, And may include at least one.

In the light emitting device package 100 according to the embodiment, power is connected to the first bonding portion 121 through the first recess R10 region, power is supplied to the second bonding region 121 through the second recess R20 region, A power source may be connected to the bonding portion 122.

Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding part 121 and the second bonding part 122. The light emitted from the light emitting device 120 may be provided in an upward direction of the package body 110.

Meanwhile, the light emitting device package 100 according to the embodiment described above may be mounted on a submount, a circuit board, or the like.

However, since a conventional light emitting device package is mounted on a submount, a circuit board or the like, a high temperature process such as a reflow process can be applied. At this time, in the reflow process, a re-melting phenomenon occurs in the bonding region between the lead frame and the light emitting device provided in the light emitting device package, so that the stability of electrical connection and physical coupling can be weakened.

However, according to the light emitting device package and the method of manufacturing the light emitting device package according to the embodiment, the bonding part of the light emitting device according to the embodiment can receive the driving power through the conductive layer disposed in the recess. The melting point of the conductive layer disposed in the recess and the melting point of the intermetallic compound layer may be selected to have a higher value than the melting point of the common bonding material.

Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main substrate through a reflow process, re-melting phenomenon does not occur, so that electrical connection and physical bonding force are not deteriorated There is no advantage.

According to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.

As a result, the selection range for the material constituting the body 113 can be widened. According to the embodiment, the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.

For example, the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.

Next, another example of the light emitting device package according to the embodiment will be described with reference to FIG.

Referring to FIG. 6, a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 5. FIG.

The light emitting device package 200 according to the embodiment shown in FIG. 6 is different from the light emitting device package 100 described with reference to FIGS. 1 to 5 in that the lower surfaces of the first and second bonding portions 121 and 122 And can be disposed in contact with the upper surface of the substrate 113.

The light emitting device package 200 according to the embodiment may include a package body 110 and a light emitting device 120.

The package body 110 may include a first frame 111 and a second frame 112. The first frame 111 and the second frame 112 may be spaced apart from each other.

The package body 110 may include a body 113. The body 113 may be disposed between the first frame 111 and the second frame 112. The body 113 may function as an electrode separation line. The body 113 may be referred to as an insulating member.

The light emitting device 120 may include a first bonding portion 121, a second bonding portion 122, a light emitting structure 123, and a substrate 124. [

The light emitting structure 123 may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first bonding portion 121 may be electrically connected to the first conductive semiconductor layer. In addition, the second bonding portion 122 may be electrically connected to the second conductivity type semiconductor layer.

The first bonding portion 121 may be disposed on the lower surface of the light emitting device 120. The second bonding portion 122 may be disposed on the lower surface of the light emitting device 120. The first bonding part 121 and the second bonding part 122 may be spaced apart from each other on the lower surface of the light emitting device 120.

The first bonding part 121 may be disposed on the first frame 111. The second bonding portion 122 may be disposed on the second frame 112.

The first bonding portion 121 may be disposed between the light emitting structure 123 and the first frame 111. The second bonding portion 122 may be disposed between the light emitting structure 123 and the second frame 112.

Meanwhile, the light emitting device package 200 according to the embodiment may include a first recess R10 and a second recess R20. The first frame 111 may include the first recess R10. The second frame 112 may include the second recess R20.

The first recess R10 may be provided on the upper surface of the first frame 111. [ The first recess R10 may be recessed in a downward direction from an upper surface of the first frame 111. [

The first recess R10 may be disposed below the first bonding portion 121 of the light emitting device 120. [ The first recess R10 may be provided so as to overlap with the first bonding portion 121 of the light emitting device 120. [ The first recess R10 may be provided to overlap with the first bonding portion 121 of the light emitting device 120 in a first direction toward the bottom surface from the top surface of the first frame 111. [ The first bonding portion 121 may be disposed on the first recess R10.

The second recess R20 may be provided on the upper surface of the second frame 112. [ The second recess R20 may be recessed in a downward direction from an upper surface of the second frame 112.

The second recess R20 may be disposed under the second bonding portion 122 of the light emitting device 120. [ The second recess R20 may be provided so as to overlap with the second bonding portion 122 of the light emitting device 120. [ The second recess R20 may be provided in a superimposed manner with the second bonding portion 122 of the light emitting device 120 in a first direction toward the lower surface from the upper surface of the second frame 112. [ The second bonding portion 122 may be disposed on the second recess R20.

The first recess R10 and the second recess R20 may be spaced apart from each other. The first recess R10 and the second recess R20 may be spaced apart from each other below the lower surface of the light emitting device 120. [

According to the embodiment, the width of the first recess R10 may be smaller than the width of the first bonding portion 121. In addition, the width of the upper region of the second recess R20 may be less than or equal to the width of the second bonding portion 122.

The area of the upper region of the first recess R10 may be smaller than the area of the lower surface of the first bonding portion 121. [ The area of the upper region of the second recess R20 may be smaller than the area of the lower surface of the second bonding portion 122. [

For example, the first recess R10 and the second recess R20 may be provided with a width of several tens of micrometers to several hundreds of micrometers.

The first and second frames 111 and 112 may include a support member and a metal layer surrounding the support member.

For example, the first and second frames 111 and 112 may include a Cu layer as a support member, and further include at least one metal layer selected from the group consisting of Ni, Ag, and the like on the surface of the support member .

The light emitting device package 200 according to the embodiment may include a first conductive portion 221 and a second conductive portion 222. In addition, the light emitting device package 200 according to the embodiment may include the first conductor 321 and the second conductor 322. The first conductor 321 may be spaced apart from the second conductor 322.

The first conductive part 221 may be disposed under the first bonding part 121. The first conductive part 221 may be electrically connected to the first bonding part 121. The first conductive part 221 may be disposed to overlap the first bonding part 121 in the first direction.

The first conductive part 221 may be provided in the first recess R10. The first conductive portion 221 may be disposed between the first bonding portion 121 and the first conductive body 321. The first conductive portion 221 may be electrically connected to the first bonding portion 121 and the first conductive body 321.

The lower surface of the first conductive part 221 may be disposed lower than the upper surface of the first recess R10. The lower surface of the first conductive part 221 may be disposed lower than the upper surface of the first conductive part 321.

The first conductive part 221 may be disposed on the first recess R10. The first conductive part 221 may extend from the lower surface of the first bonding part 121 to the inside of the first recess R10.

The second conductive part 222 may be disposed under the second bonding part 122. The second conductive part 222 may be electrically connected to the second bonding part 122. The second conductive part 222 may be disposed to overlap with the second bonding part 122 in the first direction.

The second conductive part 222 may be provided in the second recess R20. The second conductive part 222 may be disposed between the second bonding part 122 and the second conductive part 322. The second conductive part 222 may be electrically connected to the second bonding part 122 and the second conductive part 322.

The lower surface of the second conductive part 222 may be disposed lower than the upper surface of the second recess R20. The lower surface of the second conductive part 222 may be disposed lower than the upper surface of the second conductive part 322.

The second conductive part 222 may be disposed on the second recess R20. The second conductive part 222 may extend from the lower surface of the second bonding part 122 to the inside of the second recess R20.

According to an embodiment, the first conductor 321 may be disposed on a lower surface and a side surface of the first conductive portion 221. The first conductor 321 may be disposed in direct contact with a lower surface and a side surface of the first conductive portion 221.

In addition, according to the embodiment, the second conductor 322 may be disposed on a lower surface and a side surface of the second conductive portion 222. The second conductor 322 may be disposed in direct contact with a lower surface and a side surface of the second conductive portion 222.

The first conductor 321 may be provided in the first recess R10. The first conductor 321 may be disposed under the first bonding portion 121. The second conductor 322 may be provided in the second recess R20. The second conductor 322 may be disposed under the second bonding portion 122.

According to the light emitting device package of this embodiment, the first and second conductive parts 221 and 222 and the first and second conductive parts 321 and 322 and the first and second bonding parts 121 and 122 can be more stably provided.

The first and second bonding portions 121 and 122 may have a width in a second direction perpendicular to the first direction in which the first and second recesses R10 and R20 are concave. The width of the first and second bonding portions 121 and 122 may be greater than the width of the first and second recesses R10 and R20 in the second direction. The width of the first and second conductive parts 221 and 222 may be smaller than the width of the first and second recesses R10 and R20 in the second direction.

According to an embodiment of the present invention, after the first and second conductors 321 and 322 are provided to the first and second recesses R10 and R20, respectively, And can be disposed and attached on the frame 111, 112. The first and second conductive parts 221 and 222 may be arranged in the first and second recesses R10 and R20 respectively and the first and second conductive parts 321 and 322 May be in contact with the lower surface and side surfaces of the first and second conductive parts 221 and 222.

The first and second conductors 321 and 322 may be diffused and moved along the sides of the first and second conductive parts 221 and 222. The first conductor 321 may be disposed in direct contact with the lower surface of the first bonding portion 121. The first conductor 321 may be electrically connected to the first bonding portion 121. The first conductor (321) may be arranged to be surrounded by the first frame (111). The second conductor 322 may be disposed in direct contact with the lower surface of the second bonding portion 122. The second conductor 322 may be electrically connected to the second bonding portion 122. The second conductor (322) may be disposed to be surrounded by the second frame (112).

For example, the first and second conductive parts 221 and 222 may be stably bonded to the first and second bonding parts 121 and 122 through separate bonding materials, respectively. The side surfaces and the bottom surfaces of the first and second conductive portions 221 and 222 may be in contact with the first and second conductors 321 and 322, respectively.

The first and second conductive parts 221 and 222 may be provided to the first and second bonding parts 121 and 122 through a plating process. For example, a seed layer is provided to the first and second bonding portions 121 and 122 at a wafer level where a plurality of light emitting elements are formed, a mask layer such as a photoresist film is formed on the seed layer, The process can be carried out. After the plating process is performed, the first and second conductive portions 221 and 222 may be formed only in a predetermined region of the first and second bonding portions 121 and 122 through removal of the photoresist film.

For example, the first and second conductive parts 221 and 222 may be formed as a single layer or a multilayer including at least one material selected from the group consisting of Ag, Au, Cu, Ti, Ni and the like. In addition, the first and second conductive parts 221 and 222 may include the seed layer. The seed layer may be formed as a single layer or multiple layers including at least one material selected from the group including, for example, Ti, Ni, Cu, and the like.

The first and second conductive parts 221 and 222 may be provided in a circular column shape or a polygonal column shape, for example. The shapes of the first and second conductive parts 221 and 222 may be selected corresponding to the shapes of the upper regions of the first and second recesses R10 and R20. The width or diameter of the first and second conductive parts 221 and 222 may be smaller than the width or diameter of the upper region of the first and second recesses R10 and R20.

The width of the first and second recesses R10 and R20 or the width of the first and second recesses R10 and R20 must be set so that the first and second conductive portions 221 and 222 are inserted into the first and second recesses R10 and R20, The diameter may be several tens of micrometers to several hundreds of micrometers larger than the width or diameter of the first and second conductive parts 221 and 222 in consideration of process errors and the like.

For example, the width or diameter of the first and second recesses R10 and R20 is 100 to 200 micrometers larger than the width or diameter of the first and second conductive parts 221 and 222 Can be provided. The width or diameter of the first and second recesses R10 and R20 may be 1.5 to 2.5 times larger than the width or diameter of the first and second conductive parts 221 and 222 have.

The upper surfaces of the first and second conductive parts 221 and 222 may include a flat surface. The side surfaces of the first and second conductive parts 221 and 222 may include inclined surfaces. In addition, the first and second conductive parts 221 and 222 may have different areas of the upper area and the lower area. For example, the area of the upper area of the first and second conductive parts 221 and 222 may be larger than the area of the lower area.

The first and second conductive parts 221 and 222 and the first and second bonding parts 121 and 122 may be formed of different materials in a separate process. Accordingly, the first and second conductive parts 221 and 222 and the first and second bonding parts 121 and 122 may include different materials and different lamination structures.

The first and second conductors 321 and 322 may be formed on the bottom surfaces of the first and second bonding portions 121 and 122 without providing the first and second conductive portions 221 and 222, The areas where the first and second conductors 321 and 322 are in contact with the first and second conductive parts 221 and 222 can be larger than in the case where they are directly in contact with each other. Accordingly, power is supplied from the first and second conductors 321 and 322 to the first and second bonding portions 121 and 122 through the first and second conductive portions 221 and 222, As shown in FIG.

The first conductor 321 and the second conductor 322 may include at least one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, and the like, or an alloy thereof. However, the present invention is not limited thereto, and the first conductor 321 and the second conductor 322 may be formed of a material capable of ensuring a conductive function.

For example, the first conductor 321 and the second conductor 322 may be formed using a conductive paste. The conductive paste may include a solder paste, a silver paste, or the like, and may be composed of a multi-layer or an alloy composed of different materials or a single layer. For example, the first conductor 321 and the second conductor 322 may include a SAC (Sn-Ag-Cu) material.

According to the embodiment, in the process of providing the first and second conductors 321 and 322 or in the post-heat treatment process in which the first and second conductors 321 and 322 are provided, An intermetallic compound (IMC) layer may be formed between the first and second frames 321 and 322 and the first and second frames 111 and 112.

For example, an intermetallic compound layer may be formed by bonding between the first and second conductors 321 and 322 and the first and second frames 111 and 112.

Accordingly, the first and second conductors 321 and 322 and the first and second frames 111 and 112 can be physically and electrically coupled to each other stably.

For example, the intermetallic compound layer may include at least one metal layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by a combination of a first material and a second material, and a first material may be provided from the first and second conductors 321 and 322, And second frames 111 and 112, respectively.

The intermetallic compound layer described above can have a higher melting point than a general bonding material. In addition, the heat treatment process in which the intermetallic compound layer is formed can be performed at a lower temperature than the melting point of a common bonding material.

Therefore, even when the light emitting device package 200 according to the embodiment is bonded to the main substrate through a reflow process, re-melting phenomenon does not occur, so that electrical connection and physical bonding force are not deteriorated There are advantages.

In addition, according to the light emitting device package 200 and the method of manufacturing the light emitting device package according to the embodiment, the package body 110 does not need to be exposed to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.

As a result, the selection range for the material constituting the body 113 can be widened. According to the embodiment, the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.

For example, the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.

On the other hand, according to the embodiment, the first and second An intermetallic compound layer may also be formed between the bonding portions 121 and 122 and the first and second conductors 321 and 322.

The first and second conductors 321 and 322 and the first and second conductors 321 and 322 are provided in the heat treatment process after the first and second conductors 321 and 322 are provided, And an intermetallic compound (IMC) layer may be formed between the first and second bonding portions 121 and 122.

For example, an alloy layer may be formed by bonding between the first and second conductors 321 and 322 and the first and second bonding portions 121 and 122.

Accordingly, the first conductor 321 and the first bonding portion 121 can be physically and electrically coupled more stably. The first conductor 321, the alloy layer, and the first bonding portion 121 can be physically and electrically coupled to each other in a stable manner.

In addition, the second conductor 322 and the second bonding portion 122 can be physically and electrically coupled more stably. The second conductor 322, the alloy layer, and the second bonding portion 122 can be physically and electrically coupled stably.

For example, the alloy layer may include at least one intermetallic compound layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by a combination of a first material and a second material, and a first material may be provided from the first and second conductors 321 and 322, And the second bonding portions 121 and 122, respectively.

On the other hand, according to the embodiment, the first and second An intermetallic compound layer may also be formed between the conductive parts 221 and 222 and the first and second conductors 321 and 322.

The first and second conductors 321 and 322 and the first and second conductors 321 and 322 are provided in the heat treatment process after the first and second conductors 321 and 322 are provided, And an intermetallic compound (IMC) layer may be formed between the second conductive parts 221 and 222.

For example, an alloy layer may be formed by coupling between the material of the first and second conductors 321 and 322 and the first and second conductive parts 221 and 222.

Accordingly, the first conductor 321 and the first conductor 221 can be physically and electrically coupled more stably. The first conductor 321, the alloy layer, and the first conductive part 221 can be physically and electrically coupled to each other in a stable manner.

In addition, the second conductor 322 and the second conductor 222 can be physically and electrically coupled more stably. The second conductor 322, the alloy layer, and the second conductive part 222 can be physically and electrically coupled to each other in a stable manner.

For example, the alloy layer may include at least one intermetallic compound layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by a combination of a first material and a second material, and a first material may be provided from the first and second conductors 321 and 322, And second conductive portions 221 and 222, respectively.

The light emitting device package 200 according to the embodiment may include the first resin 130.

The first resin 130 may be disposed between the body 113 and the light emitting device 120. The first resin 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120.

In the light emitting device package 200 according to the embodiment, the first resin 130 may be provided between the lower surface of the light emitting device 120 and the upper surface of the package body 110. The first resin 130 may be provided around the first and second bonding portions 121 and 122 when viewed from the upper direction of the light emitting device 120. The first resin 130 may be provided around the first and second openings R10 and R20 when viewed from above the light emitting device 120. [

The first resin 130 may function to stably fix the light emitting device 120 to the package body 110. The first resin 130 may be disposed around the first and second bonding portions 121 and 122 in contact with the side surfaces of the first and second bonding portions 121 and 122.

The first resin 130 may seal the periphery of the first bonding part 121 and the second bonding part 122. The first resin 130 may be formed such that the first conductor 321 and the second conductor 322 are out of the first recess R10 region and the second recess R20 region, And can be prevented from being diffused and moved outwardly in the direction of the outer surface of the body 120.

When the first and second conductors 321 and 322 are diffused and moved in the outer surface direction of the light emitting device 120, the first and second conductors 321 and 322 are electrically connected to the light emitting device 120 It is possible to contact the active layer and cause a failure due to a short circuit. Therefore, when the first resin 130 is disposed, a short circuit between the first and second conductors 321 and 322 and the active layer can be prevented, thereby improving the reliability of the light emitting device package according to the embodiment.

The first resin 130 may be disposed between the first bonding portion 121 and the second bonding portion 122. For example, the first resin 130 may be disposed in contact with a side surface of the first bonding portion 121 and a side surface of the second bonding portion 122.

The first resin 130 may be formed such that the first conductor 321 and the second conductor 322 are out of the first recess R10 region and the second recess R20 region, Can be prevented from being diffused and moved in the direction of the body 113 from below the lower surface of the body 120. Accordingly, it is possible to prevent the first conductor 321 and the second conductor 322 from being electrically short-circuited under the light emitting device 120.

The first resin 130 may include an adhesive function. The first resin 130 may provide an adhesive force to neighboring components. The first resin 130 may be referred to as an adhesive.

The first resin 130 may provide a stable fixing force between the light emitting device 120 and the package body 110. The first resin 130 may provide a stable fixing force between the light emitting device 120 and the body 113. The first resin 130 may be placed in direct contact with the upper surface of the body 113, for example. Also, the first resin 130 may be disposed in direct contact with the lower surface of the light emitting device 120.

For example, the first resin 130 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material . Also, as an example, when the first resin 130 includes a reflection function, the first resin 130 may include a white silicone.

The first resin 130 may provide a stable clamping force between the body 113 and the light emitting device 120. When the light is emitted to the lower surface of the light emitting device 120, And a light diffusing function may be provided between the body 113 and the body 113. When the light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the first resin 130 provides a light diffusing function to improve light extraction efficiency of the light emitting device package 200 have. In addition, the first resin 130 may reflect light emitted from the light emitting device 120. When the first resin 130 includes a reflection function, the first resin 130 may be formed of a material including TiO ₂ , SiO ₂ , and the like.

According to the embodiment, the first and second conductors 321 and 322 are provided to the first and second recesses R10 and R20, and the upper surface of the first and second frames 111 and 112 The light emitting device 120 may be attached to the package body 110 after the first resin 130 is provided on the upper surface of the body 113. [

The first and second bonding portions 121 and 122 are respectively disposed on the first and second recesses R10 and R20 and the first and second conductive portions 221 and 222 are formed on the first and second conductive portions 221 and 222, Respectively, in the second recesses R10 and R20.

Accordingly, the first and second conductors 321 and 322 can be moved along the side surfaces of the first and second conductive parts 221 and 222, The first and second bonding parts 121 and 122 may be wrapped around the first bonding part 121 and the second bonding part 122 under the first bonding part 120. According to the embodiment, the first resin 130 and the first and second conductors 321 and 322 may be simultaneously cured.

The physical properties of the first resin 130 may be selected in consideration of CTE (Coefficient of Thermal Expansion) matching between the first resin 130, the package body 110, and the light emitting device 120 . The first resin 130 may be selected from resins having low CTE values. At this time, the first resin 130 may be referred to as an LCBR (Low CTE bottom reflector), and the problem of cracking or peeling due to thermal shock can be solved.

In addition, the light emitting device package 200 according to the embodiment may include a molding part 140.

The molding part 140 may be provided on the light emitting device 120. The molding part 140 may be disposed on the first frame 111 and the second frame 112. The molding part 140 may be disposed in the cavity C provided by the package body 110.

The molding part 140 may include an insulating material. The molding unit 140 may include wavelength conversion means for receiving light emitted from the light emitting device 120 and providing wavelength-converted light. For example, the molding part 140 may include at least one selected from the group including phosphors, quantum dots, and the like.

Meanwhile, the light emitting device package according to the embodiment may further include a recess R provided on the upper surface of the body 113.

The recess R may be provided between the first recess R10 and the second recess R20. The recess R may be recessed in a first direction from the upper surface to the lower surface of the body 113. The recess R may be disposed below the light emitting device 120. The recess R may be provided to overlap with the light emitting device 120 in the first direction.

By way of example, the first resin 130 may be disposed in the recess R. The first resin 130 may be disposed between the light emitting device 120 and the body 113.

The recess R may provide a suitable space under which an under-fill process may be performed under the light emitting device 120.

The light emitting device package 200 according to the embodiment is connected to the first bonding portion 121 through the first recess R10 and the second bonding portion 121 through the second recess R20, A power source may be connected to the bonding portion 122.

Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding part 121 and the second bonding part 122. The light emitted from the light emitting device 120 may be provided in an upward direction of the package body 110.

Meanwhile, the light emitting device package 200 according to the embodiment described above may be mounted on a submount, a circuit board, or the like.

However, since a conventional light emitting device package is mounted on a submount, a circuit board or the like, a high temperature process such as a reflow process can be applied. At this time, in the reflow process, a re-melting phenomenon occurs in the bonding region between the lead frame and the light emitting device provided in the light emitting device package, so that the stability of electrical connection and physical coupling can be weakened.

However, according to the light emitting device package and the method of manufacturing the light emitting device package according to the embodiment, the bonding part of the light emitting device according to the embodiment can receive the driving power through the conductive layer disposed in the recess. The melting point of the conductive layer disposed in the recess and the melting point of the intermetallic compound layer may be selected to have a higher value than the melting point of the common bonding material.

Therefore, even when the light emitting device package 200 according to the embodiment is bonded to the main substrate through a reflow process, re-melting phenomenon does not occur and electrical connection and physical bonding force are not deteriorated There is no advantage.

In addition, according to the light emitting device package 200 and the method of manufacturing the light emitting device package according to the embodiment, the package body 110 does not need to be exposed to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.

As a result, the selection range for the material constituting the body 113 can be widened. According to the embodiment, the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.

For example, the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.

Next, another example of the light emitting device package according to the embodiment will be described with reference to FIG.

7 illustrates an example in which the light emitting device package described with reference to FIGS. 1 to 6 is mounted on a circuit board 410 and supplied. Referring to FIG.

Referring to FIG. 7, in the description of a light emitting device package according to an embodiment of the present invention, description of elements overlapping with those described with reference to FIGS. 1 to 6 may be omitted.

The light emitting device package 300 according to the embodiment may include a circuit board 410, a package body 110, and a light emitting device 120, as shown in FIG.

The circuit board 410 may include a first pad 411, a second pad 412, and a substrate 413. The substrate 413 may be provided with a power supply circuit for controlling the driving of the light emitting device 120.

The package body 110 may be disposed on the circuit board 410. The first pad 411 and the first bonding portion 121 may be electrically connected to each other. The second pad 412 and the second bonding portion 122 may be electrically connected to each other.

The first pad 411 and the second pad 412 may include a conductive material. For example, the first pad 411 and the second pad 412 may be formed of a material selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, At least one selected material or alloy thereof. The first pad 411 and the second pad 412 may be provided as a single layer or a multilayer.

The light emitting device package 300 according to the embodiment may include a package body 110, a light emitting device 120, and a circuit board 410.

The package body 110 may include a first frame 111 and a second frame 112. The first frame 111 and the second frame 112 may be spaced apart from each other.

The package body 110 may include a body 113. The body 113 may be disposed between the first frame 111 and the second frame 112. The body 113 may function as an electrode separation line. The body 113 may be referred to as an insulating member.

The light emitting device 120 may include a first bonding portion 121, a second bonding portion 122, a light emitting structure 123, and a substrate 124. [

The first bonding portion 121 may be disposed on the lower surface of the light emitting device 120. The second bonding portion 122 may be disposed on the lower surface of the light emitting device 120. The first bonding part 121 and the second bonding part 122 may be spaced apart from each other on the lower surface of the light emitting device 120.

The first bonding part 121 may be disposed on the first frame 111. The second bonding portion 122 may be disposed on the second frame 112.

The first bonding portion 121 may be disposed between the light emitting structure 123 and the first frame 111. The second bonding portion 122 may be disposed between the light emitting structure 123 and the second frame 112.

Meanwhile, the light emitting device package 300 according to the embodiment may include a first recess R10 and a second recess R20. The first frame 111 may include the first recess R10. The second frame 112 may include the second recess R20.

The first recess R10 may be provided on the upper surface of the first frame 111. [ The first recess R10 may be recessed in a downward direction from an upper surface of the first frame 111. [

The first recess R10 may be disposed below the first bonding portion 121 of the light emitting device 120. [ The first recess R10 may be provided so as to overlap with the first bonding portion 121 of the light emitting device 120. [ The first recess R10 may be provided to overlap with the first bonding portion 121 of the light emitting device 120 in a first direction toward the bottom surface from the top surface of the first frame 111. [ The first bonding portion 121 may be disposed on the first recess R10.

The second recess R20 may be provided on the upper surface of the second frame 112. [ The second recess R20 may be recessed in a downward direction from an upper surface of the second frame 112.

The second recess R20 may be disposed under the second bonding portion 122 of the light emitting device 120. [ The second recess R20 may be provided so as to overlap with the second bonding portion 122 of the light emitting device 120. [ The second recess R20 may be provided in a superimposed manner with the second bonding portion 122 of the light emitting device 120 in a first direction toward the lower surface from the upper surface of the second frame 112. [ The second bonding portion 122 may be disposed on the second recess R20.

The first recess R10 and the second recess R20 may be spaced apart from each other. The first recess R10 and the second recess R20 may be spaced apart from each other below the lower surface of the light emitting device 120. [

According to the embodiment, the width of the first recess R10 may be smaller than the width of the first bonding portion 121. In addition, the width of the upper region of the second recess R20 may be less than or equal to the width of the second bonding portion 122.

The area of the upper region of the first recess R10 may be smaller than the area of the lower surface of the first bonding portion 121. [ The area of the upper region of the second recess R20 may be smaller than the area of the lower surface of the second bonding portion 122. [

For example, the first recess R10 and the second recess R20 may be provided with a width of several tens of micrometers to several hundreds of micrometers.

The first and second frames 111 and 112 may include a support member and a metal layer surrounding the support member.

For example, the first and second frames 111 and 112 may include a Cu layer as a support member, and further include at least one metal layer selected from the group consisting of Ni, Ag, and the like on the surface of the support member .

The light emitting device package 300 according to the embodiment may include a first conductive portion 221 and a second conductive portion 222. In addition, the light emitting device package 300 according to the embodiment may include the first conductor 321 and the second conductor 322. The first conductor 321 may be spaced apart from the second conductor 322.

The first conductive part 221 may be disposed under the first bonding part 121. The first conductive part 221 may be electrically connected to the first bonding part 121. The first conductive part 221 may be disposed to overlap the first bonding part 121 in the first direction.

The first conductive part 221 may be provided in the first recess R10. The first conductive portion 221 may be disposed between the first bonding portion 121 and the first conductive body 321. The first conductive portion 221 may be electrically connected to the first bonding portion 121 and the first conductive body 321.

The lower surface of the first conductive part 221 may be disposed lower than the upper surface of the first recess R10. The lower surface of the first conductive part 221 may be disposed lower than the upper surface of the first conductive part 321.

The first conductive part 221 may be disposed on the first recess R10. The first conductive part 221 may extend from the lower surface of the first bonding part 121 to the inside of the first recess R10.

The second conductive part 222 may be disposed under the second bonding part 122. The second conductive part 222 may be electrically connected to the second bonding part 122. The second conductive part 222 may be disposed to overlap with the second bonding part 122 in the first direction.

The second conductive part 222 may be provided in the second recess R20. The second conductive part 222 may be disposed between the second bonding part 122 and the second conductive part 322. The second conductive part 222 may be electrically connected to the second bonding part 122 and the second conductive part 322.

The lower surface of the second conductive part 222 may be disposed lower than the upper surface of the second recess R20. The lower surface of the second conductive part 222 may be disposed lower than the upper surface of the second conductive part 322.

The second conductive part 222 may be disposed on the second recess R20. The second conductive part 222 may extend from the lower surface of the second bonding part 122 to the inside of the second recess R20.

According to an embodiment, the first conductor 321 may be disposed on a lower surface and a side surface of the first conductive portion 221. The first conductor 321 may be disposed in direct contact with a lower surface and a side surface of the first conductive portion 221.

In addition, according to the embodiment, the second conductor 322 may be disposed on a lower surface and a side surface of the second conductive portion 222. The second conductor 322 may be disposed in direct contact with a lower surface and a side surface of the second conductive portion 222.

The first conductor 321 may be provided in the first recess R10. The first conductor 321 may be disposed under the first bonding portion 121. The second conductor 322 may be provided in the second recess R20. The second conductor 322 may be disposed under the second bonding portion 122.

According to the light emitting device package of this embodiment, the first and second conductive parts 221 and 222 and the first and second conductive parts 321 and 322 and the first and second bonding parts 121 and 122 can be more stably provided.

The first and second bonding portions 121 and 122 may have a width in a second direction perpendicular to the first direction in which the first and second recesses R10 and R20 are concave. The width of the first and second bonding portions 121 and 122 may be greater than the width of the first and second recesses R10 and R20 in the second direction. The width of the first and second conductive parts 221 and 222 may be smaller than the width of the first and second recesses R10 and R20 in the second direction.

According to an embodiment of the present invention, after the first and second conductors 321 and 322 are provided to the first and second recesses R10 and R20, respectively, And can be disposed and attached on the frame 111, 112. The first and second conductive parts 221 and 222 may be arranged in the first and second recesses R10 and R20 respectively and the first and second conductive parts 321 and 322 May be in contact with the lower surface and side surfaces of the first and second conductive parts 221 and 222.

The first and second conductors 321 and 322 may be diffused and moved along the sides of the first and second conductive parts 221 and 222. The first conductor 321 may be disposed in direct contact with the lower surface of the first bonding portion 121. The first conductor 321 may be electrically connected to the first bonding portion 121. The first conductor (321) may be arranged to be surrounded by the first frame (111). The second conductor 322 may be disposed in direct contact with the lower surface of the second bonding portion 122. The second conductor 322 may be electrically connected to the second bonding portion 122. The second conductor (322) may be disposed to be surrounded by the second frame (112).

For example, the first and second conductive parts 221 and 222 may be stably bonded to the first and second bonding parts 121 and 122 through separate bonding materials, respectively. The side surfaces and the bottom surfaces of the first and second conductive portions 221 and 222 may be in contact with the first and second conductors 321 and 322, respectively.

The first and second conductive parts 221 and 222 may be provided to the first and second bonding parts 121 and 122 through a plating process. For example, a seed layer is provided to the first and second bonding portions 121 and 122 at a wafer level where a plurality of light emitting elements are formed, a mask layer such as a photoresist film is formed on the seed layer, The process can be carried out. After the plating process is performed, the first and second conductive portions 221 and 222 may be formed only in a predetermined region of the first and second bonding portions 121 and 122 through removal of the photoresist film.

For example, the first and second conductive parts 221 and 222 may be formed as a single layer or a multilayer including at least one material selected from the group consisting of Ag, Au, Cu, Ti, Ni and the like. In addition, the first and second conductive parts 221 and 222 may include the seed layer. The seed layer may be formed as a single layer or multiple layers including at least one material selected from the group including, for example, Ti, Ni, Cu, and the like.

The first and second conductive parts 221 and 222 may be provided in a circular column shape or a polygonal column shape, for example. The shapes of the first and second conductive parts 221 and 222 may be selected corresponding to the shapes of the upper regions of the first and second recesses R10 and R20. The width or diameter of the first and second conductive parts 221 and 222 may be smaller than the width or diameter of the upper region of the first and second recesses R10 and R20.

The width of the first and second recesses R10 and R20 or the width of the first and second recesses R10 and R20 must be set so that the first and second conductive portions 221 and 222 are inserted into the first and second recesses R10 and R20, The diameter may be several tens of micrometers to several hundreds of micrometers larger than the width or diameter of the first and second conductive parts 221 and 222 in consideration of process errors and the like.

For example, the width or diameter of the first and second recesses R10 and R20 is 100 to 200 micrometers larger than the width or diameter of the first and second conductive parts 221 and 222 Can be provided. The width or diameter of the first and second recesses R10 and R20 may be 1.5 to 2.5 times larger than the width or diameter of the first and second conductive parts 221 and 222 have.

The upper surfaces of the first and second conductive parts 221 and 222 may include a flat surface. The side surfaces of the first and second conductive parts 221 and 222 may include inclined surfaces. In addition, the first and second conductive parts 221 and 222 may have different areas of the upper area and the lower area. For example, the area of the upper area of the first and second conductive parts 221 and 222 may be larger than the area of the lower area.

The first and second conductive parts 221 and 222 and the first and second bonding parts 121 and 122 may be formed of different materials in a separate process. Accordingly, the first and second conductive parts 221 and 222 and the first and second bonding parts 121 and 122 may include different materials and different lamination structures.

The first and second conductors 321 and 322 may be formed on the bottom surfaces of the first and second bonding portions 121 and 122 without providing the first and second conductive portions 221 and 222, The areas where the first and second conductors 321 and 322 are in contact with the first and second conductive parts 221 and 222 can be larger than in the case where they are directly in contact with each other. Accordingly, power is supplied from the first and second conductors 321 and 322 to the first and second bonding portions 121 and 122 through the first and second conductive portions 221 and 222, As shown in FIG.

The first conductor 321 and the second conductor 322 may include at least one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, and the like, or an alloy thereof. However, the present invention is not limited thereto, and the first conductor 321 and the second conductor 322 may be formed of a material capable of ensuring a conductive function.

For example, the first conductor 321 and the second conductor 322 may be formed using a conductive paste. The conductive paste may include a solder paste, a silver paste, or the like, and may be composed of a multi-layer or an alloy composed of different materials or a single layer. For example, the first conductor 321 and the second conductor 322 may include a SAC (Sn-Ag-Cu) material.

According to the embodiment, in the process of providing the first and second conductors 321 and 322 or in the post-heat treatment process in which the first and second conductors 321 and 322 are provided, An intermetallic compound (IMC) layer may be formed between the first and second frames 321 and 322 and the first and second frames 111 and 112.

For example, an intermetallic compound layer may be formed by bonding between the first and second conductors 321 and 322 and the first and second frames 111 and 112.

Accordingly, the first and second conductors 321 and 322 and the first and second frames 111 and 112 can be physically and electrically coupled to each other stably.

For example, the intermetallic compound layer may include at least one metal layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by a combination of a first material and a second material, and a first material may be provided from the first and second conductors 321 and 322, And second frames 111 and 112, respectively.

The intermetallic compound layer described above can have a higher melting point than a general bonding material. In addition, the heat treatment process in which the intermetallic compound layer is formed can be performed at a lower temperature than the melting point of a common bonding material.

Therefore, even when the light emitting device package 300 according to the embodiment is bonded to the main substrate through a reflow process, re-melting phenomenon does not occur and electrical connection and physical bonding force are not deteriorated There are advantages.

In addition, according to the light emitting device package 300 and the method of manufacturing the light emitting device package according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.

As a result, the selection range for the material constituting the body 113 can be widened. According to the embodiment, the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.

For example, the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.

On the other hand, according to the embodiment, the first and second An intermetallic compound layer may also be formed between the bonding portions 121 and 122 and the first and second conductors 321 and 322.

The first and second conductors 321 and 322 and the first and second conductors 321 and 322 are provided in the heat treatment process after the first and second conductors 321 and 322 are provided, And an intermetallic compound (IMC) layer may be formed between the first and second bonding portions 121 and 122.

For example, an alloy layer may be formed by bonding between the first and second conductors 321 and 322 and the first and second bonding portions 121 and 122.

Accordingly, the first conductor 321 and the first bonding portion 121 can be physically and electrically coupled more stably. The first conductor 321, the alloy layer, and the first bonding portion 121 can be physically and electrically coupled to each other in a stable manner.

In addition, the second conductor 322 and the second bonding portion 122 can be physically and electrically coupled more stably. The second conductor 322, the alloy layer, and the second bonding portion 122 can be physically and electrically coupled stably.

For example, the alloy layer may include at least one intermetallic compound layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by a combination of a first material and a second material, and a first material may be provided from the first and second conductors 321 and 322, And the second bonding portions 121 and 122, respectively.

On the other hand, according to the embodiment, the first and second An intermetallic compound layer may also be formed between the conductive parts 221 and 222 and the first and second conductors 321 and 322.

The first and second conductors 321 and 322 and the first and second conductors 321 and 322 are provided in the heat treatment process after the first and second conductors 321 and 322 are provided, And an intermetallic compound (IMC) layer may be formed between the second conductive parts 221 and 222.

For example, an alloy layer may be formed by coupling between the material of the first and second conductors 321 and 322 and the first and second conductive parts 221 and 222.

Accordingly, the first conductor 321 and the first conductor 221 can be physically and electrically coupled more stably. The first conductor 321, the alloy layer, and the first conductive part 221 can be physically and electrically coupled to each other in a stable manner.

In addition, the second conductor 322 and the second conductor 222 can be physically and electrically coupled more stably. The second conductor 322, the alloy layer, and the second conductive part 222 can be physically and electrically coupled to each other in a stable manner.

For example, the alloy layer may include at least one intermetallic compound layer selected from the group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by a combination of a first material and a second material, and a first material may be provided from the first and second conductors 321 and 322, And second conductive portions 221 and 222, respectively.

The light emitting device package 200 according to the embodiment may include the first resin 130.

The first resin 130 may be disposed between the body 113 and the light emitting device 120. The first resin 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120.

In the light emitting device package 300 according to the embodiment, the first resin 130 may be provided between the lower surface of the light emitting device 120 and the upper surface of the package body 110. The first resin 130 may be provided around the first and second bonding portions 121 and 122 when viewed from the upper direction of the light emitting device 120. The first resin 130 may be provided around the first and second openings R10 and R20 when viewed from above the light emitting device 120. [

The first resin 130 may function to stably fix the light emitting device 120 to the package body 110. The first resin 130 may be disposed around the first and second bonding portions 121 and 122 in contact with the side surfaces of the first and second bonding portions 121 and 122.

The first resin 130 may seal the periphery of the first bonding part 121 and the second bonding part 122. The first resin 130 may be formed such that the first conductor 321 and the second conductor 322 are out of the first recess R10 region and the second recess R20 region, And can be prevented from being diffused and moved outwardly in the direction of the outer surface of the body 120.

When the first and second conductors 321 and 322 are diffused and moved in the outer surface direction of the light emitting device 120, the first and second conductors 321 and 322 are electrically connected to the light emitting device 120 It is possible to contact the active layer and cause a failure due to a short circuit. Therefore, when the first resin 130 is disposed, a short circuit between the first and second conductors 321 and 322 and the active layer can be prevented, thereby improving the reliability of the light emitting device package according to the embodiment.

The first resin 130 may be disposed between the first bonding portion 121 and the second bonding portion 122. For example, the first resin 130 may be disposed in contact with a side surface of the first bonding portion 121 and a side surface of the second bonding portion 122.

The first resin 130 may be formed such that the first conductor 321 and the second conductor 322 are out of the first recess R10 region and the second recess R20 region, Can be prevented from being diffused and moved in the direction of the body 113 from below the lower surface of the body 120. Accordingly, it is possible to prevent the first conductor 321 and the second conductor 322 from being electrically short-circuited under the light emitting device 120.

The first resin 130 may include an adhesive function. The first resin 130 may provide an adhesive force to neighboring components. The first resin 130 may be referred to as an adhesive.

The first resin 130 may provide a stable fixing force between the light emitting device 120 and the package body 110. The first resin 130 may provide a stable fixing force between the light emitting device 120 and the body 113. The first resin 130 may be placed in direct contact with the upper surface of the body 113, for example. Also, the first resin 130 may be disposed in direct contact with the lower surface of the light emitting device 120.

For example, the first resin 130 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material . Also, as an example, when the first resin 130 includes a reflection function, the first resin 130 may include a white silicone.

The first resin 130 may provide a stable clamping force between the body 113 and the light emitting device 120. When the light is emitted to the lower surface of the light emitting device 120, And a light diffusing function may be provided between the body 113 and the body 113. When the light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the first resin 130 provides a light diffusion function to improve the light extraction efficiency of the light emitting device package 300 have. In addition, the first resin 130 may reflect light emitted from the light emitting device 120. When the first resin 130 includes a reflection function, the first resin 130 may be formed of a material including TiO ₂ , SiO ₂ , and the like.

According to the embodiment, the first and second conductors 321 and 322 are provided to the first and second recesses R10 and R20, and the upper surface of the first and second frames 111 and 112 The light emitting device 120 may be attached to the package body 110 after the first resin 130 is provided on the upper surface of the body 113. [

The first and second bonding portions 121 and 122 are respectively disposed on the first and second recesses R10 and R20 and the first and second conductive portions 221 and 222 are formed on the first and second conductive portions 221 and 222, Respectively, in the second recesses R10 and R20.

Accordingly, the first and second conductors 321 and 322 can be moved along the side surfaces of the first and second conductive parts 221 and 222, The first and second bonding parts 121 and 122 may be wrapped around the first bonding part 121 and the second bonding part 122 under the first bonding part 120. According to the embodiment, the first resin 130 and the first and second conductors 321 and 322 may be simultaneously cured.

The physical properties of the first resin 130 may be selected in consideration of CTE (Coefficient of Thermal Expansion) matching between the first resin 130, the package body 110, and the light emitting device 120 . The first resin 130 may be selected from resins having low CTE values. At this time, the first resin 130 may be referred to as an LCBR (Low CTE bottom reflector), and the problem of cracking or peeling due to thermal shock can be solved.

In addition, the light emitting device package 300 according to the embodiment may include a molding part 140.

The molding part 140 may be provided on the light emitting device 120. The molding part 140 may be disposed on the first frame 111 and the second frame 112. The molding part 140 may be disposed in the cavity C provided by the package body 110.

The molding part 140 may include an insulating material. The molding unit 140 may include wavelength conversion means for receiving light emitted from the light emitting device 120 and providing wavelength-converted light. For example, the molding part 140 may include at least one selected from the group including phosphors, quantum dots, and the like.

The light emitting device package 300 according to the embodiment is connected to the first bonding portion 121 through the first recess R10 region and the second bonding portion 121 through the second recess R20 region, A power source may be connected to the bonding portion 122.

Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding part 121 and the second bonding part 122. The light emitted from the light emitting device 120 may be provided in an upward direction of the package body 110.

According to the embodiment, the first pad 411 of the circuit board 410 and the first conductor 321 may be electrically connected. Also, the second pad 412 of the circuit board 410 and the second conductor 322 may be electrically connected.

The first pad 411 may be electrically connected to the first frame 111. Also, the second pad 412 may be electrically connected to the second frame 112.

Meanwhile, according to the embodiment, a separate bonding layer may be further provided between the first pad 411 and the first frame 111. Further, a separate bonding layer may be additionally provided between the second pad 412 and the second frame 112.

7, a power source supplied from the circuit board 410 is electrically connected to the first conductor 321 and the second conductor 322 through the first conductor 321 and the second conductor 322. In the light emitting device package according to the embodiment, (121) and the second bonding portion (122). The first pad 411 of the circuit board 410 is in direct contact with the first frame 111 and the second pad 412 of the circuit board 410 and the second frame 112 of the circuit board 410 are in direct contact with each other. Can be directly contacted.

As described above, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the bonding part of the light emitting device according to the embodiment can receive the driving power through the conductive layer disposed in the recess. The melting point of the conductive layer disposed in the recess and the melting point of the intermetallic compound layer may be selected to have a higher value than the melting point of the common bonding material.

Therefore, the light emitting device package according to the embodiment has advantages such that the electrical connection and the physical bonding force are not deteriorated because the re-melting phenomenon does not occur even when the light emitting device package according to the embodiment is bonded to the main substrate through a reflow process have.

In addition, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.

As a result, the selection range for the material constituting the body 113 can be widened. According to the embodiment, the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.

For example, the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.

Meanwhile, the light emitting device package described above may be provided with a flip chip light emitting device as an example.

For example, the flip chip light emitting device may be provided as a transmissive flip chip light emitting device that emits light in six plane directions, or may be provided as a reflective flip chip light emitting device that emits light in five plane directions.

The reflection type flip chip light emitting device in which light is emitted in the five-sided direction may have a structure in which a reflection layer is disposed in a direction close to the package package body 110. For example, the reflective flip chip light emitting device may include an insulating reflective layer (e.g., a Distributed Bragg Reflector, an Omni Directional Reflector, etc.) and / or a conductive reflective layer (e.g., Ag, Al, Ni, Au, etc.).

The flip chip light emitting device may include a first electrode electrically connected to the first conductivity type semiconductor layer and a second electrode electrically connected to the second conductivity type semiconductor layer, And may be provided as a general horizontal type light emitting device in which light is emitted between one electrode and the second electrode.

The flip-chip light emitting device in which light is emitted in the six-sided direction may include a reflection type flip chip light emitting device including a reflection region in which a reflection layer is disposed between the first and second bonding units, and a transmission region in which light is emitted. Can be provided.

Here, the transmissive flip chip light emitting device refers to a device that emits light to the top surface, four side surfaces, and six surfaces of the bottom surface. In addition, the reflection type flip chip light emitting device means an element that emits light to the upper surface and the four side surfaces.

Hereinafter, an example of a flip chip light emitting device applied to a light emitting device package according to an embodiment of the present invention will be described with reference to the accompanying drawings.

FIG. 8 is a plan view illustrating an electrode arrangement of a light emitting device applied to a light emitting device package according to an embodiment of the present invention, and FIG. 9 is a cross-sectional view taken along line F-F of FIG.

8, only the relative arrangement of the first electrode 127 and the second electrode 128 is conceptually shown. The first electrode 127 may include a first bonding portion 121 and a first branched electrode 125. The second electrode 128 may include a second bonding portion 122 and a second branched electrode 126.

A light emitting device according to an embodiment may include a light emitting structure 123 disposed on a substrate 124.

The substrate 124 may be selected from the group consisting of a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. For example, the substrate 124 may be provided as a patterned sapphire substrate (PSS) having a concavo-convex pattern formed on its upper surface.

The light emitting structure 123 may include a first conductive semiconductor layer 123aa, an active layer 123b, and a second conductive semiconductor layer 123c. The active layer 123b may be disposed between the first conductive semiconductor layer 123a and the second conductive semiconductor layer 123c. For example, the active layer 123b may be disposed on the first conductive semiconductor layer 123a, and the second conductive semiconductor layer 123c may be disposed on the active layer 123b.

The first conductive semiconductor layer 123a may be provided as an n-type semiconductor layer and the second conductive semiconductor layer 123c may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductive semiconductor layer 123a may be provided as a p-type semiconductor layer, and the second conductive semiconductor layer 123c may be provided as an n-type semiconductor layer.

The light emitting device according to the embodiment may include a first electrode 127 and a second electrode 128.

The first electrode 127 may include a first bonding portion 121 and a first branched electrode 125. The first electrode 127 may be electrically connected to the second conductive semiconductor layer 123c. The first branched electrodes 125 may be branched from the first bonding portion 121. The first branched electrode 125 may include a plurality of branched electrodes branched from the first bonding portion 121.

The second electrode 128 may include a second bonding portion 122 and a second branched electrode 126. The second electrode 128 may be electrically connected to the first conductive semiconductor layer 123a. The second branched electrode 126 may be branched from the second bonding portion 122. The second branched electrode 126 may include a plurality of branched electrodes branched from the second bonding portion 122.

The first branched electrode 125 and the second branched electrode 126 may be arranged to be shifted from each other in a finger shape. The power supplied through the first bonding portion 121 and the second bonding portion 122 by the first branched electrode 125 and the second branched electrode 126 is supplied to the entire light emitting structure 123 It can be spread and provided.

The first electrode 127 and the second electrode 128 may have a single-layer structure or a multi-layer structure. For example, the first electrode 127 and the second electrode 128 may be ohmic electrodes. For example, the first electrode 127 and the second electrode 128 may be formed of one selected from the group consisting of ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / , At least one of Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf or an alloy of two or more of them.

The light emitting structure 123 may further include a protective layer. The protective layer may be provided on the upper surface of the light emitting structure 123. Further, the protective layer may be provided on a side surface of the light emitting structure 123. The protective layer may be provided so that the first bonding part 121 and the second bonding part 122 are exposed. In addition, the protective layer may be selectively provided on the periphery and the bottom surface of the substrate 124.

By way of example, the protective layer may be provided as an insulating material. For example, the protective layer can be made of Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y And at least one material selected from the group consisting of:

In the light emitting device according to the embodiment, light generated in the active layer 123b may be emitted in six directions of the light emitting device. Light generated in the active layer 123b may be emitted in six directions through the upper and lower surfaces of the light emitting device.

For reference, the vertical direction of the light-emitting device described with reference to FIGS. 1 to 7 and the vertical direction of the light-emitting device shown in FIGS. 8 and 9 are shown opposite to each other.

According to the embodiment, the sum of the areas of the first and second bonding portions 121 and 122 may be 10% or less based on the area of the top surface of the substrate 124. The sum of the areas of the first and second bonding portions 121 and 122 may be greater than the sum of the areas of the first and second bonding portions 121 and 122. In order to increase the light extraction efficiency of the light emitting device, May be set to 10% or less based on the top surface area.

In addition, according to the embodiment, the sum of the areas of the first and second bonding portions 121 and 122 may be 0.7% or more based on the area of the top surface of the substrate 124. The sum of the areas of the first and second bonding parts 121 and 122 is set to be larger than the area of the top surface of the substrate 124 To 0.7% or more.

For example, the width of the first bonding portion 121 along the major axis direction of the light emitting device may be several tens of micrometers. The width of the first bonding portion 121 may be, for example, 70 micrometers to 90 micrometers. Also, the area of the first bonding portion 121 may be several thousand square micrometers.

In addition, the width of the second bonding portion 122 along the major axis direction of the light emitting device may be several tens of micrometers. The width of the second bonding portion 122 may be, for example, 70 micrometers to 90 micrometers. In addition, the area of the second bonding portion 122 may be several thousand square micrometers.

As the area of the first and second bonding portions 121 and 122 is reduced, the amount of light transmitted to the lower surface of the light emitting device 120 can be increased.

Next, another example of the light emitting device applied to the light emitting device package according to the embodiment will be described with reference to FIGS. 10 and 11. FIG.

FIG. 10 is a plan view of a light emitting device according to an embodiment of the present invention, and FIG. 11 is a cross-sectional view taken along line A-A of the light emitting device shown in FIG.

10, the first sub-electrode 1171 is disposed under the first bonding portion 1171 and the second bonding portion 1172, but is electrically connected to the first bonding portion 1171. However, in order to facilitate understanding, And the second sub-electrode 1142 electrically connected to the second bonding portion 1172 can be seen.

A light emitting device 1100 according to an embodiment may include a light emitting structure 1110 disposed on a substrate 1105.

The substrate 1105 may be selected from the group consisting of a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. For example, the substrate 1105 may be provided as a patterned sapphire substrate (PSS) having a concavo-convex pattern formed on its upper surface.

The light emitting structure 1110 may include a first conductive semiconductor layer 1111, an active layer 1112, and a second conductive semiconductor layer 1113. The active layer 1112 may be disposed between the first conductive semiconductor layer 1111 and the second conductive semiconductor layer 1113. For example, the active layer 1112 may be disposed on the first conductive semiconductor layer 1111, and the second conductive semiconductor layer 1113 may be disposed on the active layer 1112.

According to an embodiment, the first conductivity type semiconductor layer 1111 may be provided as an n-type semiconductor layer, and the second conductivity type semiconductor layer 1113 may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity type semiconductor layer 1111 may be provided as a p-type semiconductor layer, and the second conductivity type semiconductor layer 1113 may be provided as an n-type semiconductor layer.

Hereinafter, the first conductive semiconductor layer 1111 is provided as an n-type semiconductor layer and the second conductive semiconductor layer 1113 is provided as a p-type semiconductor layer for convenience of description .

The light emitting device 1100 according to the embodiment may include a light transmitting electrode layer 1130. The transmissive electrode layer 1130 can improve current diffusion and increase light output.

For example, the light transmitting electrode layer 1130 may include at least one selected from the group consisting of a metal, a metal oxide, and a metal nitride. The transmissive electrode layer 1130 may include a light-transmitting material.

The transparent electrode layer 1130 may be formed of a material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO gallium zinc oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / IrOx / Au / ITO, Pt, Ni, Au, Rh, and Pd.

The light emitting device 1100 according to the embodiment may include a reflective layer 1160. The reflective layer 1160 may include a first reflective layer 1161, a second reflective layer 1162, and a third reflective layer 1163. The reflective layer 1160 may be disposed on the transmissive electrode layer 1130.

The second reflective layer 1162 may include a first opening h1 for exposing the transmissive electrode layer 1130. The second reflective layer 1162 may include a plurality of first openings h1 disposed on the transmissive electrode layer 1130. [

The first reflective layer 1161 may include a plurality of second openings h2 exposing the upper surface of the first conductive type semiconductor layer 1111. [

The third reflective layer 1163 may be disposed between the first reflective layer 1161 and the second reflective layer 1162. For example, the third reflective layer 1163 may be connected to the first reflective layer 1161. The third reflective layer 1163 may be connected to the second reflective layer 1162. The third reflective layer 1163 may be physically in direct contact with the first reflective layer 1161 and the second reflective layer 1162.

The reflective layer 1160 may be in contact with the second conductive type semiconductor layer 1113 through a plurality of contact holes provided in the transparent electrode layer 1130. [ The reflective layer 1160 may be physically contacted to the upper surface of the second conductive type semiconductor layer 1113 through a plurality of contact holes provided in the transmissive electrode layer 1130.

The reflective layer 1160 may be provided as an insulating reflective layer. For example, the reflective layer 1160 may be provided as a DBR (Distributed Bragg Reflector) layer. In addition, the reflective layer 1160 may be provided as an ODR (Omni Directional Reflector) layer. Also, the reflective layer 1160 may be provided by stacking a DBR layer and an ODR layer.

The light emitting device 1100 according to the embodiment may include a first sub electrode 1141 and a second sub electrode 1142.

The first sub-electrode 1141 may be electrically connected to the first conductivity type semiconductor layer 1111 in the second opening h2. The first sub-electrode 1141 may be disposed on the first conductive semiconductor layer 1111. For example, in the light emitting device 1100 according to the embodiment, the first sub-electrode 1141 penetrates the second conductive type semiconductor layer 1113 and the active layer 1112 to form the first conductive type semiconductor layer 1111. The first conductivity type semiconductor layer 1111 may be disposed on the upper surface of the first conductive type semiconductor layer 1111 in the recess.

The first sub electrode 1141 may be electrically connected to the upper surface of the first conductive type semiconductor layer 1111 through a second opening h2 provided in the first reflective layer 1161. [ The first sub-electrode 1141 may be formed directly on the upper surface of the first conductivity type semiconductor layer 1111 in a plurality of recess regions, for example, Can be contacted.

The second sub-electrode 1142 may be electrically connected to the second conductive type semiconductor layer 1113. The second sub-electrode 1142 may be disposed on the second conductive type semiconductor layer 1113. According to the embodiment, the transparent electrode layer 1130 may be disposed between the second sub-electrode 1142 and the second conductive type semiconductor layer 1113.

The second sub-electrode 1142 may be electrically connected to the second conductive type semiconductor layer 1113 through a first opening h1 provided in the second reflective layer 1162. [ For example, the second sub-electrode 1142 may be electrically connected to the second conductive type semiconductor layer 1113 through the transparent electrode layer 1130 in a plurality of P regions.

The second sub-electrode 1142 may be in direct contact with the upper surface of the transparent electrode layer 1130 through a plurality of first openings h1 provided in the second reflective layer 1162 in a plurality of P regions.

According to the embodiment, the first sub-electrode 1141 and the second sub-electrode 1142 may have polarities and may be spaced apart from each other.

The first sub-electrode 1141 may be provided in a plurality of line shapes as an example. In addition, the second sub-electrode 1142 may be provided in a plurality of line shapes as an example. The first sub-electrode 1141 may be disposed between a plurality of second sub-electrodes 1142 adjacent to each other. The second sub-electrode 1142 may be disposed between a plurality of neighboring first sub-electrodes 1141.

When the first sub-electrode 1141 and the second sub-electrode 1142 have different polarities, they may be arranged in different numbers of electrodes. For example, when the first sub-electrode 1141 is an n-electrode and the second sub-electrode 1142 is a p-electrode, the number of the second sub-electrodes 1142 Can be more. When the electrical conductivity and / or resistance of the second conductivity type semiconductor layer 1113 and the first conductivity type semiconductor layer 1111 are different from each other, the first sub electrode 1141 and the second sub electrode 1142, The electrons injected into the light emitting structure 1110 can be balanced with the holes and thus the optical characteristics of the light emitting device can be improved.

Meanwhile, the polarities of the first sub-electrode 1141 and the second sub-electrode 1142 may be opposite to each other depending on characteristics required in the light emitting device package to which the light emitting device according to the embodiment is applied. The width, length, shape, and number of the first sub-electrode 1141 and the second sub-electrode 1142 can be variously modified according to characteristics required in the light emitting device package.

The first sub-electrode 1141 and the second sub-electrode 1142 may have a single-layer structure or a multi-layer structure. For example, the first sub-electrode 1141 and the second sub-electrode 1142 may be ohmic electrodes. For example, the first sub-electrode 1141 and the second sub-electrode 1142 may be formed of a metal such as ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / , At least one of Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf or an alloy of two or more of them.

The light emitting device 1100 according to the embodiment may include a protective layer 1150.

The passivation layer 1150 may include a plurality of third openings h3 exposing the second sub-electrode 1142. [ The plurality of third openings h3 may be disposed corresponding to a plurality of PB regions provided in the second sub-

In addition, the protective layer 1150 may include a plurality of fourth openings h4 for exposing the first sub-electrode 1141. [ The plurality of fourth openings h4 may be disposed corresponding to a plurality of NB regions provided in the first sub-

The protective layer 1150 may be disposed on the reflective layer 1160. The protective layer 1150 may be disposed on the first reflective layer 1161, the second reflective layer 1162, and the third reflective layer 1163.

For example, the protective layer 1150 may be provided as an insulating material. For example, the passivation layer 1150 may include at least one of Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y And at least one material selected from the group consisting of:

The light emitting device 1100 according to the embodiment may include a first bonding portion 1171 and a second bonding portion 1172 disposed on the protective layer 1150.

The first bonding portion 1171 may be disposed on the first reflective layer 1161. The second bonding portion 1172 may be disposed on the second reflective layer 1162. The second bonding portion 1172 may be spaced apart from the first bonding portion 1171.

The first bonding portion 1171 may contact the upper surface of the first sub-electrode 1141 through a plurality of the fourth openings h4 provided in the protective layer 1150 in a plurality of NB regions. The plurality of NB regions may be arranged to be perpendicular to the second opening h2. When the plurality of NB regions and the second openings h2 are vertically offset from each other, a current injected into the first bonding portion 1171 can be uniformly distributed in the horizontal direction of the first sub-electrode 1141, Therefore, current can be uniformly injected in the plurality of NB regions.

The second bonding portion 1172 may be in contact with the upper surface of the second sub-electrode 1142 through a plurality of the third openings h3 provided in the protective layer 1150 in a plurality of PB regions have. When the plurality of PB regions and the plurality of first openings h1 are not vertically overlapped, the current injected into the second bonding portion 1172 is uniformly distributed in the horizontal direction of the second sub-electrode 1142 So that current can be evenly injected in the plurality of PB regions.

According to the light emitting device 1100, the first bonding portion 1171 and the first sub-electrode 1141 can be in contact with each other in the fourth openings h4. Also, the second bonding portion 1172 and the second sub-electrode 1142 may be in contact with each other in a plurality of regions. Thus, according to the embodiment, power can be supplied through a plurality of regions, so that current dispersion effect is generated according to increase of the contact area and dispersion of the contact region, and operation voltage can be reduced.

The first reflective layer 1161 is disposed under the first sub-electrode 1141 and the second reflective layer 1162 is disposed under the second sub-electrode 1142. In addition, ). The first reflective layer 1161 and the second reflective layer 1162 reflect light emitted from the active layer 1112 of the light emitting structure 1110 to form a first sub-electrode 1141 and a second sub- It is possible to minimize the occurrence of light absorption and improve the light intensity Po.

For example, the first reflective layer 1161 and the second reflective layer 1162 are made of an insulating material. In order to reflect light emitted from the active layer 1112, a material having a high reflectivity, for example, a DBR structure Can be achieved.

The first reflective layer 1161 and the second reflective layer 1162 may have a DBR structure in which materials having different refractive indexes are repeatedly arranged. For example, the first reflective layer 1161 and the second reflective layer 1162 may be formed of TiO ₂ , SiO ₂ , Ta ₂ O ₅ , HfO ₂ Or a laminated structure including at least one of them.

The first reflective layer 1161 and the second reflective layer 1162 may emit light from the active layer 1112 according to the wavelength of the light emitted from the active layer 1112. In other words, And can be freely selected to adjust the reflectivity to light.

According to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided as an ODR layer. According to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided as a hybrid type in which a DBR layer and an ODR layer are stacked.

When the light emitting device according to the embodiment is mounted by a flip chip bonding method and is implemented as a light emitting device package, the light provided from the light emitting structure 1110 may be emitted through the substrate 1105. Light emitted from the light emitting structure 1110 may be reflected by the first reflective layer 1161 and the second reflective layer 1162 and may be emitted toward the substrate 1105.

Also, the light emitted from the light emitting structure 1110 may be emitted in the lateral direction of the light emitting structure 1110. The light emitted from the light emitting structure 1110 may be transmitted through the first bonding portion 1171 and the second bonding portion 1172 among the surfaces on which the first bonding portion 1171 and the second bonding portion 1172 are disposed, The portion 1172 can be released to the outside through the region not provided.

The light emitted from the light emitting structure 1110 may be transmitted through the first reflective layer 1161 and the second reflective layer 1172 among the surfaces on which the first bonding portion 1171 and the second bonding portion 1172 are disposed. The second reflective layer 1162, and the third reflective layer 1163 are not provided.

Accordingly, the light emitting device 1100 according to the embodiment can emit light in six directions surrounding the light emitting structure 1110, and the light intensity can be remarkably improved.

The sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 in the upper direction of the light emitting element 1100 is smaller than the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172, May be equal to or smaller than 60% of the total area of the upper surface of the light emitting device 1100 in which the first bonding portion 1171 and the second bonding portion 1172 are disposed.

The total area of the upper surface of the light emitting device 1100 may correspond to an area defined by the lateral length and the longitudinal length of the lower surface of the first conductive semiconductor layer 1111 of the light emitting structure 1110 . The total area of the upper surface of the light emitting device 1100 may correspond to the area of the upper surface or the lower surface of the substrate 1105.

By thus providing the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 equal to or smaller than 60% of the total area of the light emitting device 1100, The amount of light emitted to the surface where the first bonding portion 1171 and the second bonding portion 1172 are disposed can be increased. Accordingly, according to the embodiment, since the amount of light emitted toward the six surfaces of the light emitting device 1100 is increased, the light extraction efficiency can be improved and the light intensity Po can be increased.

The sum of the area of the first bonding portion 1171 and the area of the second bonding portion 1172 in the upper direction of the light emitting device 1100 is preferably 30 %, ≪ / RTI >

By thus providing the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 equal to or greater than 30% of the total area of the light emitting device 1100, Stable mounting can be performed through the first bonding portion 1171 and the second bonding portion 1172 and the electrical characteristics of the light emitting device 1100 can be secured.

The sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 may be greater than the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 in consideration of the light extraction efficiency and the stability of bonding, ) And not more than 60%.

That is, when the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 is 30% or more to 100% or less of the total area of the light emitting device 1100, The electrical characteristics can be ensured and the bonding force to be mounted on the light emitting device package can be ensured, so that stable mounting can be performed.

When the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is more than 0% and not more than 60% of the total area of the light emitting device 1100, The light extraction efficiency of the light emitting device 1100 may be improved and the light intensity Po may be increased by increasing the amount of light emitted to the surface on which the second bonding portion 1172 and the second bonding portion 1172 are disposed.

In order to secure the electrical characteristics of the light emitting device 1100 and the bonding force to be mounted on the light emitting device package and increase the light intensity, the area of the first bonding portion 1171 and the second bonding portion 1172 Is not less than 30% and not more than 60% of the total area of the light emitting element 1100.

In addition, according to the light emitting device 1100 according to the embodiment, the third reflective layer 1163 may be disposed between the first bonding portion 1171 and the second bonding portion 1172. For example, the length of the third reflective layer 1163 along the major axis of the light emitting device 1100 may be arranged corresponding to the distance between the first bonding portion 1171 and the second bonding portion 1172 have. In addition, the area of the third reflective layer 1163 may be 10% or more and 25% or less of the entire upper surface of the light emitting device 1100, for example.

When the area of the third reflective layer 1163 is 10% or more of the entire upper surface of the light emitting device 1100, the package body disposed under the light emitting device can be discolored or prevented from cracking, , It is advantageous to secure the light extraction efficiency to emit light to the six surfaces of the light emitting element.

In other embodiments, the area of the third reflective layer 1163 is set to be more than 0% and less than 10% of the entire upper surface of the light emitting device 1100 in order to secure a larger light extraction efficiency. And the area of the third reflective layer 1163 may be more than 25% to 100% of the entire upper surface of the light emitting device 1100 in order to further secure the effect of preventing discoloration or cracking in the package body. . ≪ / RTI >

The light emitting structure 1110 may be formed as a second region provided between the first bonding portion 1171 or the second bonding portion 1172 which is adjacent to the long side of the light emitting device 1100, The light can be transmitted and emitted.

The light generated in the light emitting structure may be incident on the third region provided between the first bonding portion 1171 or the second bonding portion 1172 adjacent to the side surface of the light emitting device 1100 in the short axis direction And can be transmitted and discharged.

According to the embodiment, the size of the first reflective layer 1161 may be several micrometers larger than the size of the first bonding portion 1171. For example, the area of the first reflective layer 1161 may be sufficiently large to cover the area of the first bonding portion 1171. The length of one side of the first reflective layer 1161 may be about 4 micrometers to 10 micrometers larger than the length of one side of the first bonding portion 1171 in consideration of a process error.

In addition, the size of the second reflective layer 1162 may be several micrometers larger than the size of the second bonding portion 1172. For example, the area of the second reflective layer 1162 may be sufficiently large to cover the area of the second bonding portion 1172. The length of one side of the second reflective layer 1162 may be greater than the length of one side of the second bonding portion 1172, for example, about 4 micrometers to 10 micrometers.

The light emitted from the light emitting structure 1110 may be transmitted through the first bonding portion 1171 and the second bonding portion 1172 by the first reflective layer 1161 and the second reflective layer 1162, The light can be reflected without being incident on the light source. Accordingly, according to the embodiment, light generated and emitted from the light emitting structure 1110 can be minimized by being incident on the first bonding portion 1171 and the second bonding portion 1172 and being lost.

In addition, according to the light emitting device 1100 according to the embodiment, since the third reflective layer 1163 is disposed between the first bonding portion 1171 and the second bonding portion 1172, 1171 and the second bonding portion 1172 of the first bonding portion.

As described above, the light emitting device 1100 according to the embodiment may be mounted, for example, in a flip chip bonding manner to provide a light emitting device package. In this case, when the package body on which the light emitting device 1100 is mounted is provided by resin or the like, strong light of a short wavelength emitted from the light emitting device 1100 in the lower region of the light emitting device 1100 causes discoloration Or cracks may occur.

However, according to the light emitting device 1100 according to the embodiment, since the amount of light emitted between the regions where the first bonding portion 1171 and the second bonding portion 1172 are disposed can be adjusted, Can be prevented from being discolored or cracked.

The light emitting device 1100 having the first bonding portion 1171, the second bonding portion 1172 and the third reflective layer 1163 may be formed on the upper surface of the upper surface of the light emitting device 1100, Light generated in the structure 1110 can be transmitted and emitted.

Accordingly, according to the embodiment, since the amount of light emitted toward the six surfaces of the light emitting device 1100 is increased, the light extraction efficiency can be improved and the light intensity Po can be increased. In addition, it is possible to prevent the package body disposed close to the lower surface of the light emitting device 1100 from being discolored or cracked.

In addition, according to the light emitting device 1100 according to the embodiment, the transparent electrode layer 1130 may be provided with a plurality of contact holes C1, C2, and C3. The second conductive type semiconductor layer 1113 and the reflective layer 1160 may be bonded to each other through a plurality of contact holes C1, C2, and C3 provided in the transparent electrode layer 1130. [ The reflective layer 1160 can be in direct contact with the second conductive type semiconductor layer 1113 so that the adhesive force can be improved as compared with the case where the reflective layer 1160 is in contact with the transparent electrode layer 1130.

When the reflective layer 1160 is directly in contact with the transmissive electrode layer 1130, the bonding force or adhesion between the reflective layer 1160 and the transmissive electrode layer 1130 may be weakened. For example, when the insulating layer and the metal layer are combined, the bonding force or adhesion between the materials may be weakened.

For example, when the bonding force or adhesive force between the reflective layer 1160 and the transmissive electrode layer 1130 is weak, peeling may occur between the two layers. If peeling occurs between the reflective layer 1160 and the transparent electrode layer 1130, the characteristics of the light emitting device 1100 may deteriorate and the reliability of the light emitting device 1100 can not be secured.

However, according to the embodiment, since the reflective layer 1160 can directly contact the second conductive type semiconductor layer 1113, the reflective layer 1160, the transparent electrode layer 1130, (1113) can be stably provided.

Therefore, according to the embodiment, since the coupling force between the reflective layer 1160 and the second conductive type semiconductor layer 1113 can be stably provided, it is possible to prevent the reflective layer 1160 from being peeled off from the transparent electrode layer 1130 . In addition, since the bonding force between the reflective layer 1160 and the second conductive type semiconductor layer 1113 can be stably provided, the reliability of the light emitting device 1100 can be improved.

Meanwhile, as described above, the transparent electrode layer 1130 may be provided with a plurality of contact holes C1, C2, and C3. Light emitted from the active layer 1112 may be incident on the reflective layer 1160 through the plurality of contact holes C1, C2, and C3 provided in the transmissive electrode layer 1130 and may be reflected. Accordingly, the light generated in the active layer 1112 is incident on the light-transmitting electrode layer 1130 to be lost, and the light extraction efficiency can be improved. Accordingly, the luminous intensity of the light emitting device 1100 according to the embodiment can be improved.

Meanwhile, the light emitting device package according to the embodiment can be applied to the light source device.

Further, the light source device may include a display device, a lighting device, a head lamp, and the like depending on an industrial field.

An example of the light source device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module that emits light and includes a light emitting element, a light emitting module disposed in front of the reflector, An optical sheet including a light guide plate, prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, And may include a color filter disposed in front thereof. Here, the bottom cover, the reflection plate, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. The display device may have a structure in which light emitting elements emitting red, green, and blue light are disposed, respectively, without including a color filter.

As another example of the light source device, the head lamp includes a light emitting module including a light emitting device package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, A lens that refracts light forward, and a shade that reflects off a portion of the light that is reflected by the reflector and that is directed to the lens to provide the designer with a desired light distribution pattern.

The lighting device, which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply, an inner case, and a socket. Further, the light source device according to the embodiment may further include at least one of a member and a holder. The light source module may include the light emitting device package according to the embodiment.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or scope of the invention.

110 package body 111 first frame
112 Second frame 113 Body
120 Light emitting device 121 First bonding part
122 Second bonding part 123 Light emitting structure
130 first resin 140 molding part
221 First conductive part 222 Second conductive part
321 first conductor 322 second conductor
R10 1st recess R20 1st recess

Claims (11)

First and second frames spaced apart from each other and including first and second recesses, respectively;
A body disposed between the first and second frames;
A light emitting device disposed on the body and including first and second bonding portions;
First and second conductive parts disposed under the first and second bonding parts, respectively; And
First and second conductors respectively disposed in the first and second recesses;
Lt; / RTI >
Each of the first and second conductive portions extending into the first and second recesses in the first and second bonding portions, respectively,
Wherein the first and second conductors are disposed between the first and second conductive portions and the first and second frames, respectively. The method according to claim 1,
Wherein the first and second conductors are disposed on side surfaces and a bottom surface of the first and second conductive parts, respectively. The method according to claim 1,
Wherein a width of the first and second bonding portions provided along the long side direction of the light emitting element is larger than a width of the first and second recesses provided along the long side direction of the light emitting element. The method of claim 3,
Wherein a width of the first and second conductive parts provided along the long side direction of the light emitting element is smaller than a width of the first and second recesses. The method according to claim 1,
Wherein a lower surface of the first and second bonding portions is disposed at a height equal to or higher than an upper surface of the first and second frames providing the first and second recesses. The method according to claim 1,
And a portion of the first and second conductors is disposed between the lower surface of the first and second bonding portions and the upper surface of the first and second frames, respectively. The method according to claim 1,
Wherein the first and second conductive portions comprise at least one material selected from the group consisting of Ag, Au, Cu, Ti, and Ni. The method according to claim 1,
Wherein the thickness of the first and second conductive parts is several tens of micrometers to several hundreds of micrometers. The method according to claim 1,
Wherein the first and second conductive parts and the first and second bonding parts comprise different materials. The method according to claim 1,
And a resin disposed around the first and second bonding portions. The method according to claim 1,
Wherein an upper surface of the first and second conductive parts is disposed at a height equal to or higher than an upper surface of the first and second frames providing the first and second recesses.

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