KR101623042B1 - Light emitting device package, backlight unit, lighting device and its manufacturing method - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, an illuminating device, and a method of manufacturing a light emitting device package that can be used for display or illumination, device; A lead frame having a first electrode provided on one side of the electrode separation space, a second electrode provided on the other side of the electrode assembly, and a light emitting element mounted on the lead frame; A first bonding medium disposed between the first pad and the first electrode so that the first pad of the light emitting device and the first electrode of the lead frame are electrically connected; A second bonding medium disposed between the second pad and the second electrode such that the second pad of the light emitting device and the second electrode of the lead frame are electrically connected; And an electrode separation wall made of a resin material filled in the electrode separation space, wherein the first electrode and the second electrode of the lead frame are aligned so that the light emitting device is aligned on the lead frame and the electrode separation wall, And a chip accommodating portion capable of accommodating at least a part of the light emitting element in the electrode separating wall.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, a lighting device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, an illumination device, and a method of manufacturing a light emitting device package, and more particularly to a light emitting device package, a backlight unit, And a manufacturing method thereof.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to shock and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so that they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

However, in the conventional light emitting device package, when the solder paste is coated on the substrate, the adhesion strength between the substrate and the light emitting device may be lowered, resulting in a short circuit, There is a problem in that the solder paste spreads over the electrode dividing line along the substrate while being pressed by the light emitting element when the device is seated, resulting in a short circuit.

In addition, since the conventional light emitting device package is cured by being contacted with the solder paste in a flowing state, there is a problem that the light emitting axis of the light emitting device is inclined or twisted and the optical performance is deteriorated.

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and it is an object of the present invention to provide a chip accommodating portion and a receiving portion, A light emitting device package, a backlight unit, an illumination device, and a method of manufacturing a light emitting device package. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a light emitting device package including: a light emitting device in the form of a flip chip having a first pad and a second pad; A lead frame having a first electrode provided on one side of the electrode separation space, a second electrode provided on the other side of the electrode assembly, and a light emitting element mounted on the lead frame; A first bonding medium disposed between the first pad and the first electrode so that the first pad of the light emitting device and the first electrode of the lead frame are electrically connected; A second bonding medium disposed between the second pad and the second electrode such that the second pad of the light emitting device and the second electrode of the lead frame are electrically connected; And an electrode separation wall made of a resin material filled in the electrode separation space, wherein the first electrode and the second electrode of the lead frame are aligned so that the light emitting device is aligned on the lead frame and the electrode separation wall, And a chip accommodating portion capable of accommodating at least a part of the light emitting element in the electrode separating wall.

According to an aspect of the present invention, at least one first accommodating portion capable of accommodating the first bonding medium is formed on one side of the bottom surface of the chip accommodating portion, and the second bonding medium is accommodated in the other side of the bottom surface of the chip accommodating portion And at least one second accommodating portion capable of accommodating the second accommodating portion may be formed.

According to an aspect of the present invention, the first bonding medium is received between the first electrode of the lead frame and the electrode separating wall so that a part of the electrode separating wall can directly contact the first bonding medium. Between the second electrode of the lead frame and the electrode separating wall so that the other part of the electrode separating wall can be in direct contact with the second bonding medium, And at least one second receiving portion capable of receiving two bonding media may be formed.

According to an aspect of the present invention, at least one inner wall surface of the chip accommodating portion and at least one inner wall surface of the second accommodating portion are connected to each other in the same plane, and air inside the chip accommodating portion can be discharged to the outside An inner wall surface of the chip accommodating portion and a side surface of the light emitting device corresponding to the inner wall surface may be spaced apart from each other.

According to an aspect of the present invention, the first bonding medium and the second bonding medium are solder pastes respectively applied or dispensed to the first housing portion and the second housing portion, 1 accommodating portions may be arranged in parallel along a longitudinal direction or a width direction of the first pad.

The light emitting device package according to the present invention may further include a reflective encapsulant for forming a reflective cup portion surrounding the side surface of the light emitting device, The upper surface may be in the form of a flattened straight line or a cross shape so as to be in direct molding contact with the light emitting element.

According to an aspect of the present invention, the electrode separation wall may have a pointed end having a pointed end which is in direct contact with the light emitting element.

According to an aspect of the present invention, there is provided a backlight unit including: a light emitting device in the form of a flip chip having a first pad and a second pad; A lead frame having a first electrode provided on one side of the electrode separation space, a second electrode provided on the other side of the electrode assembly, and a light emitting element mounted on the lead frame; A first bonding medium disposed between the first pad and the first electrode so that the first pad of the light emitting device and the first electrode of the lead frame are electrically connected; A second bonding medium disposed between the second pad and the second electrode such that the second pad of the light emitting device and the second electrode of the lead frame are electrically connected; An electrode separation wall made of resin filled in the electrode separation space; And a light guide plate disposed on an optical path of the light emitting device, wherein the first electrode, the second electrode, and the electrode of the lead frame are aligned so that the light emitting device is aligned on the lead frame and the electrode separating wall, And a chip accommodating portion capable of accommodating at least a part of the light emitting element is formed in the separating wall.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device package, the method comprising: providing a first electrode on one side of the electrode separation space, a second electrode on the other side of the electrode separation space, Preparing a lead frame having a first electrode and a second electrode with a chip accommodating portion capable of accommodating at least a part of the light emitting element; Molding the electrode separation wall in which a chip accommodating portion capable of accommodating at least a part of the light emitting device is formed by filling the electrode separation space with resin; Applying or dispensing a first bonding medium and a second bonding medium to a bottom surface of the chip accommodating portion; Placing the light emitting element on the first electrode, the second electrode, and the chip receiving portion formed in the electrode dividing wall so that at least a part of the light emitting element is received in the chip receiving portion; And reflowing the first bonding medium and the second bonding medium.

According to some embodiments of the present invention as described above, first and second accommodating portions capable of accommodating the chip accommodating portion and the solder paste are formed on the substrate and the electrode separating wall to increase the adhesion surface area to improve the adhesion. At the same time, the solder paste can be guided in a direction away from the electrode separation line to prevent a short-circuit phenomenon. When the light emitting element is mounted, both side pads of the light emitting element can be directly contacted with the substrate to accurately align the light emitting axis. It is possible to improve the fusion path and to prevent the chip lift from being defective. Of course, the scope of the present invention is not limited by these effects.

1 is an exploded perspective view of a light emitting device package according to some embodiments of the present invention.
2 is a cross-sectional view of a light emitting device package of FIG. 1 taken along line II-II.
3 is a plan view of the light emitting device package of FIG.
4 is an exploded perspective view of a light emitting device package according to some other embodiments of the present invention.
5 is a cross-sectional view showing a VV cut plane of the light emitting device package of FIG.
6 is an exploded perspective view of a light emitting device package according to still another embodiment of the present invention.
7 is a plan view of the light emitting device package of Fig.
8 is a cross-sectional view illustrating a light emitting device package according to still another embodiment of the present invention.
9 is a plan view illustrating a light emitting device package according to still another embodiment of the present invention.
FIGS. 10 to 14 are cross-sectional views illustrating steps of manufacturing a light emitting device package according to some embodiments of the present invention.
15 is a cross-sectional view illustrating a backlight unit according to some embodiments of the present invention.
16 is a flowchart showing a method of manufacturing a light emitting device package according to some embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified in various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions illustrated herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a partially exploded perspective view of a light emitting device package 100 according to some embodiments of the present invention. 2 is a cross-sectional view taken along the line II-II of the light emitting device package 100 of FIG. 1, and FIG. 3 is a plan view of the light emitting device package 100 of FIG.

1 to 3, a light emitting device package 100 according to some embodiments of the present invention includes a light emitting device 10, a lead frame 20, a first bonding medium (not shown) B1, a second bonding medium B2, and an electrode separation wall 31. [

Here, the light emitting device 10 may be a flip chip type LED (Light Emitting Diode) having a first pad P1 and a second pad P2.

The light emitting device 10 may be formed of a semiconductor, as shown in FIG. For example, LEDs of blue, green, red, and yellow light emission, LEDs of ultraviolet light emission, and LEDs of infrared light emission, which are made of a nitride semiconductor, can be applied.

The light emitting device 10 may be formed by epitaxially growing nitride semiconductors such as InN, AlN, InGaN, AlGaN, and InGaAlN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD To grow. The light emitting element 10 may be formed using a semiconductor such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, or AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. Further, the light emitting element 10 can be selected to have an arbitrary wavelength depending on applications such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl 2 O 4, MgO, LiAlO 2, LiGaO 2, GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

In addition, since the silicon (Si) substrate absorbs light generated from the GaN-based semiconductor and the external quantum efficiency of the light emitting device is lowered, the substrate may be removed as necessary, and Si, Ge, SiAl, A support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

The buffer layer may be made of GaN, AlN, AlGaN, InGaN, or InGaNAlN, and ZrB2, HfB2, ZrN, HfN, or TiN may be used as needed. Further, a plurality of layers may be combined, or the composition may be gradually changed.

Although not shown, the light emitting element 10 may be a flip chip type having a signal transmission medium such as a pump or a solder in addition to the pads P1 and P2. In addition, a bonding wire may be applied to the terminal, A light emitting element to which a bonding wire is applied only to the first terminal or a second terminal in part, or a horizontal or vertical type light emitting element can be applied.

In addition, the first pad P1 and the second pad P2 may be deformed into various shapes other than the rectangular shape shown in FIG. 1, and may have a finger structure having a plurality of fingers on one arm, for example.

1, the light emitting device 10 may be mounted on the lead frame 20, or a plurality of the light emitting devices 10 may be mounted on the lead frame 20.

Meanwhile, the lead frame 20 may be a substrate having a first electrode 21 provided on one side of the electrode separation space, and a second electrode 22 provided on the other side of the electrode.

The lead frame 20 may be made of a material or a conductive material having appropriate mechanical strength and insulation that can support or accommodate the light emitting element 10. [

For example, the lead frame 20 may be formed of a metal material such as aluminum, copper, zinc, tin, lead, gold or silver, which is insulated, and may be in the form of a perforated or bent plate.

In addition, a printed circuit board (PCB) in which an epoxy resin sheet is formed in multiple layers in place of the lead frame 20 can be applied. The lead frame 20 may be a Flexible Printed Circuit Board (FPCB) made of a flexible material.

In addition, instead of the lead frame 20, a synthetic resin substrate such as resin or glass epoxy or a ceramic substrate may be used in consideration of thermal conductivity.

In order to improve workability, the lead frame 20 may be made of at least one selected from at least one of EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber and combinations thereof . ≪ / RTI >

The first bonding medium B1 is electrically connected to the first pad P1 of the light emitting device 10 and the first electrode 21 of the lead frame 20, P1) and the first electrode 21, as shown in FIG.

The second bonding medium B2 is electrically connected to the second pad P2 of the light emitting device 10 and the second electrode 22 of the lead frame 20, P2, and the second electrode 22, respectively.

Herein, the first bonding medium B1 and the second bonding medium B2 are solder paste (solder paste) which is applied or dispensed to the first accommodating portion 21a and the second accommodating portion 22a ) Or a solder cream.

In addition, the first bonding medium B1 and the second bonding medium B2 may be in the form of a flowable state during the bonding of the solder or the like, or a conductive bonding medium which is a curable material which is cured at the time of cooling, .

The electrode separation wall 31 may be a molding structure of a resin material filled in the electrode separation space. In addition, the electrode separating wall 31 may be molded integrally with the reflective encapsulant 30 to be described later.

Meanwhile, the light emitting device package 100 according to some embodiments of the present invention includes the lead frame 20 and the electrode separating wall 31 so that the light emitting device 10 can be aligned on the lead frame 20 and the electrode separating wall 31, A chip accommodating portion 23 capable of accommodating at least a part of the light emitting element 10 is formed on the first electrode 21, the second electrode 22 and the electrode separating wall 31 of the light emitting element 20 .

For example, the depth of the chip accommodating portion 23 may be 10 to 100 micrometers for smooth alignment when the light emitting device 10 is received.

At least one first accommodating portion 21a capable of accommodating the first bonding medium B1 is formed on one side of the bottom surface of the chip accommodating portion 23, At least one second receiving portion 22a capable of receiving the second bonding medium B2 may be formed.

The first electrode 21 and the electrode separating wall 31 of the lead frame 20 are connected to each other so that a part of the electrode separating wall 31 can be in direct contact with the first bonding medium B1. , At least one first receiving portion 21a capable of receiving the first bonding medium B1 is formed and the other portion of the electrode separating wall 31 is in direct contact with the second bonding medium B2, At least one second receiving portion 22a capable of receiving the second bonding medium B2 is provided between the second electrode 22 and the electrode separating wall 31 of the lead frame 20 May be formed.

For example, as shown in FIG. 1, the first accommodating portion 21a is opened upward, three side surfaces and bottom surfaces of the inner wall surface thereof are formed on the first electrode 21, And may be the exposed left side of the electrode separating wall 31.

Likewise, the second accommodating portion 22a is opened upward, three side surfaces and a bottom surface of the inner wall surface are formed in the second electrode 22, and the other one side surface is formed in the electrode separating wall 31 As shown in FIG.

Therefore, the chip accommodating portion 23 can be provided on the first electrode 21, the second electrode 22 and the electrode separating wall 31, and the chip accommodating portion 23 can be provided on the bottom surface of the chip accommodating portion 23 A part of the first bonding medium B1 and the second bonding medium B2 accommodated in the first accommodating part 21a and the second accommodating part 22a formed are directly connected to the electrode separating wall 31, Can be contacted.

2, at least a part of the light emitting element 10 is inserted into the chip accommodating part 23, and a part of the first pad P1 of the light emitting element 10 is inserted into the lead frame 23, So that a part of the second pad P2 of the light emitting element 10 can be in direct contact with the second electrode 22 of the lead frame 20, The inlet width W2 or length of the first accommodating portion 21a is smaller than the width W1 or length of the first pad P1 and the inlet width W2 or length W2 of the second accommodating portion 22a, May be smaller than the width W1 or length of the second pad P2.

At least a part of the first pad P1 of the light emitting element 10 is connected to the first electrode of the lead frame 20 21 and a part of the second pad P2 of the light emitting element 10 can be in direct contact with the second electrode 22 of the lead frame 20, Both the pads P1 and P2 of the light emitting element 10 directly contact the lead frame 20 so that the light emitting element 10 is not tilted or twisted so that the light emitting axis can be accurately aligned.

Since the shape of the first accommodating portion 21a and the shape of the second accommodating portion 22a can be formed with a molding die with high accuracy by using the electrode separating wall 31 of the molding resin material, It is possible to precisely control the receiving space of the bonding media B1 and B2 and to prevent the overflow of the bonding media B1 and B2 or the external leakage.

3, the first accommodating portion 21a and the second accommodating portion 22a have a footprint of the first pad P1 and the second pad P2, Can be located within the areas A1 and A2.

The first accommodating portion 21a and the second accommodating portion 22a are not limited to the drawings and a plurality of the first accommodating portion 21a and the second accommodating portion 22a may be arranged along the longitudinal direction and the width direction of the first pad P1 .

That is, the number, position, and shape of the first accommodating portion 21a and the second accommodating portion 22a may be variously applied to the second accommodating portion 21a, such as two, three, four, eight, etc. , But the present invention is not limited thereto.

The edge of the first pad P1 of the light emitting element 10 may be aligned with the edge of the lead frame 20, The edge portion of the second pad P2 of the light emitting element 10 is in direct contact with the second electrode 22 of the lead frame 20 so as to be in contact with the first electrode 21, The first accommodating portion 21a and the second accommodating portion 22a are sealed so that the first bonding portion 21a and the second accommodating portion 22a are connected to the first bonding medium B1 and the second bonding medium B2 do not leak.

At the same time, it is possible to prevent other phosphors, transparent encapsulant made of silicon, reflective members, and other molding materials from penetrating into the first accommodating portion 21a and the second accommodating portion 22a.

It is needless to say that the first accommodating portion 21a and the second accommodating portion 22a are located within the footprint area A3 of the light emitting element 10. [

Herein, for example, the foot pad region of the first pad P1 indicates a region where the first pad P1 is projected onto the lead frame 20 on a plan view, And the bottom surface area occupied on the base 20.

FIG. 4 is an exploded perspective view illustrating a light emitting device package 200 according to some embodiments of the present invention, and FIG. 5 is a cross-sectional view illustrating a V-V cut surface of the light emitting device package 200 of FIG.

4 and 5, the light emitting device package 200 according to some other embodiments of the present invention includes at least one inner wall surface 23b of the chip receiving portion 23, At least one inner wall surface 22b of the chip accommodating portion 23 is connected to the inner wall surface 23b of the chip accommodating portion 23 so that the air inside the chip accommodating portion 23 can be discharged to the outside. And the side surface 10b of the light emitting element 10 corresponding to the light emitting element 10 may be spaced apart from each other.

For example, the groove length or groove width of the chip accommodating portion 23 may be 10 to 30 percent larger than the length or width of the light emitting device 10. [

Air or air bubbles or air contained in the bonding mediums B1 and B2 are admitted to the outside of the chip accommodating portion 23 when the light emitting element 10 is placed in the chip accommodating portion 23, It is possible to easily discharge the chip storage part 23 and prevent the chip storage part 23 from being filled with the chip storage part 23 even if the amount of the bonding mediums B1 and B2 is large.

FIG. 6 is an exploded perspective view of a light emitting device package 300 according to still another embodiment of the present invention, and FIG. 7 is a plan view of the light emitting device package 300 of FIG.

6 and 7, the electrode isolation wall 31 of the light emitting device package 300 according to still another embodiment of the present invention may be integrally molded and molded together with the reflective encapsulant 30, And the top surface 31a may be in the form of a flat cross so as to be in direct contact with the light emitting element 10. [

Therefore, the cross-shaped electrode dividing wall 31 can more firmly support the light emitting element 10 in a wider area.

In addition, the electrode separating wall 31 can be freely molded into various shapes depending on the shape of the molding die.

1 to 7, the light emitting device packages 100, 200, and 300 of the present invention are formed by filling the electrode separation space to form an electrode separation wall 31, The reflective encapsulant 30 forming the reflective cup portion 32 having a shape surrounding the side surface of the reflective cup portion 32 and the filler 40 filled in the reflective cup portion 32 may be further included.

Here, in the reflective encapsulant 30, the electrode separation wall 31 and the reflection cup portion 32 may be integrally molded by a mold.

In addition, the reflective encapsulant 30 may be formed of an epoxy resin composition, a silicone resin composition, a modified epoxy resin composition, a modified silicone resin composition, a polyimide resin composition, a modified polyimide resin composition, a polyphthalamide (PPA), a polycarbonate resin , A polyphenylene sulfide (PPS), a liquid crystal polymer (LCP), an ABS resin, a phenol resin, an acrylic resin, a PBT resin, a Bragg reflection layer, an air gap, It can be done by selecting more than one.

The reflective encapsulant 30 may be made of at least one selected from the group consisting of EMC including a reflective material, white silicon containing a reflective material, a photoimageable solder resist (PSR), and combinations thereof.

More specifically, for example, the reflective encapsulant 30 may be a silicone resin composition, a modified epoxy resin composition such as a silicone-modified epoxy resin, a modified silicone resin composition such as an epoxy-modified silicone resin, a polyimide resin composition , Modified polyimide resin composition, resin such as polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin and PBT resin have.

Further, a light reflecting material such as titanium oxide, silicon dioxide, titanium dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, chromium, have.

8 is a cross-sectional view illustrating a light emitting device package 400 according to still another embodiment of the present invention.

As shown in FIG. 8, the electrode separation wall 31 may have a sharp end face 31b in direct contact with the light emitting element 10.

Therefore, when the first bonding medium (B1) or the second bonding medium (B2) is applied, the solder paste is elongated at the time of dispensing or dispensing using the pointed tip (31b) of the electrode separation wall That is, when the solder tail phenomenon occurs, the solder tail may be cut to guide each solder to the first accommodating portion 21a and the second accommodating portion 22a.

9 is a plan view illustrating a light emitting device package 500 according to still another embodiment of the present invention.

9, the chip receiving portion 23 of the light emitting device package 500 according to still another embodiment of the present invention can be rounded rounded at four corners in a plan view.

Therefore, when the light emitting element 10 is mounted, rounded corners of the chip accommodating portion 23 may mitigate breakage or collision of the light emitting element 10.

Meanwhile, as shown in FIG. 14, the filler 40 may be filled in the reflection cup portion 32.

Here, the filler 40 may be made of at least one selected from the group consisting of silicon, transparent epoxy, fluorescent material, and combinations thereof, which are relatively small and dense particles.

In addition, the filler (40) can be used in various applications such as EMC, epoxy resin composition, silicone resin composition, modified epoxy resin composition, modified silicone resin composition, polyimide resin composition, modified polyimide resin composition, poly (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin and the like.

In addition, the filler 40 may include a phosphor.

Such a phosphor may have the following composition formula and color.

Oxide system: yellow and green Y ₃ Al ₅ O ₁₂ : Ce, Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce

(Ba, Sr) ₂ SiO ₄ : Eu, yellow and orange (Ba, Sr) ₃ SiO ₅ : Ce

The nitride-based: the green β-SiAlON: Eu, yellow _{L 3 Si 6 O 11: Ce} , orange-colored α-SiAlON: Eu, red _{CaAlSiN 3: Eu, Sr 2 Si} 5 N 8: Eu, SrSiAl 4 N 7: Eu

The composition of the phosphor should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

In addition, the phosphor may include materials such as a quantum dot. The above-mentioned oxides, nitrides, silicates, and QD materials may be used alone or as a mixture of these phosphors.

QD can be composed of a core (3 to 10 nm) such as CdSe and InP, a shell (0.5 to 2 nm) such as ZnS and ZnSe, and a ligand for stabilizing the core and the shell. Can be implemented.

In addition, the application method of the phosphor may be at least one of a method of being applied to an LED chip or a light emitting device, a method of covering the LED chip, a method of covering the LED chip, a method of attaching a sheet form such as a film or a ceramic phosphor.

Dispensing and spray coating are common methods of spraying, and dispensing includes mechanical methods such as pneumatic method and screw, linear type. It is also possible to control the amount of dyeing through a small amount of jetting by means of a jetting method and control the color coordinates thereof. The method of collectively applying the phosphor on the wafer level or the light emitting device substrate by the spray method can easily control productivity and thickness.

The method of directly covering the light emitting device or the LED chip in a film form can be applied by a method of electrophoresis, screen printing or phosphor molding, and the method can be different according to necessity of application of the side of the LED chip.

In order to control the efficiency of the long-wavelength light-emitting phosphor that reabsers light emitted from a short wavelength among two or more kinds of phosphors having different emission wavelengths, two or more kinds of phosphor layers having different emission wavelengths can be distinguished. A DBR (ODR) layer may be included between each layer to minimize absorption and interference.

In order to form a uniform coating film, the phosphor may be formed into a film or ceramic form and then attached onto the LED chip or the light emitting device.

In order to make a difference in light efficiency and light distribution characteristics, a photoelectric conversion material may be located in a remote format. In this case, the photoelectric conversion material is located together with a transparent polymer, glass, or the like depending on its durability and heat resistance.

Since the phosphor coating technique plays a major role in determining the optical characteristics in the light emitting device, control techniques such as the thickness of the phosphor coating layer and the uniform dispersion of the phosphor have been studied variously. QD can also be placed in the LED chip or the light emitting element in the same manner as the phosphor, and can be positioned between the glass or translucent polymer material for light conversion.

15 is a cross-sectional view illustrating a backlight unit 1000 according to some embodiments of the present invention.

15, a backlight unit 1000 according to some embodiments of the present invention includes a light emitting device 10 in the form of a flip chip having a first pad P1 and a second pad P2, A lead frame 20 in which a first electrode 21 is provided on one side of the electrode separation space and a second electrode 22 is provided on the other side thereof; A first bonding medium B1 provided between the first pad P1 and the first electrode 21 so that the first electrode 21 of the lead frame 20 can be electrically connected to the first electrode 21 of the lead frame 20, The second electrode P2 of the light emitting element 10 and the second electrode 22 of the lead frame 20 are electrically connected to each other. An electrode separating wall 31 made of a resin material filled in the electrode separating space and a light guide plate 50 provided in an optical path of the light emitting element 10, (21) of the lead frame (20) so that the light emitting element (10) can be aligned on the lead frame (20) and the electrode dividing wall (31) 22 and a chip accommodating portion 23 capable of accommodating at least a part of the light emitting element 10 may be formed in the electrode separating wall 31.

Here, the light emitting device 10, the lead frame 20, the first bonding medium B1, the second bonding medium B2, the electrode separation wall 31, The light emitting device package 23 may have the same function and configuration as the components of the light emitting device package 100 according to some embodiments of the present invention, as shown in FIG. Therefore, detailed description is omitted.

In addition, the light guide plate 50 may be an optical member that can be made of a light-transmitting material to guide light generated from the light emitting device 10.

The light guide plate 50 may be installed in a path of light generated by the light emitting device 10 to transmit light generated by the light emitting device 10 over a wider area.

The light guide plate 50 may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like , And various light transmitting resin materials may be applied. The light guide plate 50 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

Although not shown, various diffusion sheets, prism sheets, filters, and the like may be additionally provided above the light guide plate 50. In addition, various display panels such as an LCD panel may be installed above the light guide plate 50.

Although not shown, the present invention may include a lighting device or a display device including the light emitting device package 100 described above. Here, the components of the illumination device or the display device according to some embodiments of the present invention may have the same configuration and function as those of the above-described light emitting device package of the present invention. Therefore, detailed description is omitted.

FIGS. 10 to 14 are cross-sectional views illustrating steps of manufacturing the light emitting device package 100 according to some embodiments of the present invention.

10 to 14, the manufacturing process of the light emitting device package 100 according to some embodiments of the present invention will be described step by step. First, as shown in FIG. 10, A first electrode 21 is provided on one side of the first electrode 21 and a second electrode 22 is provided on the other side of the first electrode 21 and a second electrode 22 of the light emitting device 10 is provided on the first electrode 21 and the second electrode 22, A lead frame 20 having a chip accommodating portion 23 capable of accommodating a part thereof can be prepared.

Here, the first accommodating portion 21 and the second accommodating portion 22 may be formed on the bottom surface of the chip accommodating portion 23, respectively.

11, an electrode separation wall (not shown) is formed by filling the resin into the electrode separation space using a metal mold to form a chip accommodating portion 23 capable of accommodating at least a part of the light emitting element 10 31 may be molded together with the reflective encapsulant 30.

Next, as shown in FIG. 12, various printing methods such as a super-precision transfer method, a super precision stamping method, an inkjet printing method, a stencil printing method, a squeeze printing method, , The first bonding medium (B1) and the second bonding medium (B2) such as a solder paste are applied or dispensed to the bottom surface of the chip accommodating portion (23) or inside the first accommodating portion and the second accommodating portion can do.

13, the first electrode 21, the second electrode 22, and the electrode separator 23 are formed so that at least a part of the light emitting element 10 is received in the chip accommodating portion 23. [ The light emitting element is mounted on the chip accommodating portion 23 formed on the wall 31 so that a part of the first pad P1 is in direct contact with the first electrode 21, And the first bonding pad and the second bonding pad are electrically connected to the first bonding pad and the second bonding pad so that a part of the second pad is directly in contact with the second electrode, (10) can be seated on the lead frame (20).

At this time, the light emitting element 10 can be received in the chip accommodating portion 23, and a part of the first pad P1 of the light emitting element 10 is electrically connected to the first electrode (not shown) of the lead frame 20 21 and a part of the second pad P2 of the light emitting element 10 can be in direct contact with the second electrode 22 of the lead frame 20, The pads P1 and P2 on both sides of the light emitting element 10 directly contact the lead frame 20 so that the light emitting element 10 is not tilted or twisted so that the light emitting axis can be accurately aligned, The rim of the first pad P1 is in direct contact with the first electrode 21 of the lead frame 20 so that no gap is formed and the rim of the second pad P2 of the light emitting element 10 Since the second electrode 22 of the lead frame 20 is in direct contact with the second electrode 22 of the lead frame 20, 2a are sealed so that the first bonding medium B1 and the second bonding medium B2 do not leak to the outside of the first accommodating portion 21a and the second accommodating portion 22a.

The light emitting device 10 is disposed in the chip accommodating portion 23, that is, in the first accommodating portion 21a and the second accommodating portion 22a, 2 bonding medium B2, it is possible to improve the fusing path and to prevent the chip lift from being defective.

Next, as shown in FIG. 13, the first bonding medium (B1) and the second bonding medium (B2) are heated to cure the first bonding medium (B1) and the second bonding medium And reflow can be performed.

14, the light emitting device 10 may be protected by a filler 40 such as various transparent encapsulants or phosphors, and various optical members such as the light guide plate 50 may be disposed thereon.

16 is a flowchart illustrating a method of manufacturing a light emitting device package 100 according to some embodiments of the present invention.

10 to 16, a method of manufacturing a light emitting device package according to some embodiments of the present invention includes the steps of providing a first electrode 21 on one side with respect to an electrode separation space, A lead frame having a second electrode 22 and a chip accommodating portion 23 capable of accommodating at least a part of the light emitting element 10 is formed on the first electrode 21 and the second electrode 22 And a chip accommodating portion (23) capable of accommodating at least a part of the light emitting element (10) by filling a resin into the electrode separating space (S3) of applying or dispensing a first bonding medium (B1) and a second bonding medium (B2) to the bottom surface of the chip accommodating portion (23) (22) and the second electrode (22) so that at least a part of the first electrode (10) is received in the chip accommodating portion (23) (S4) placing the light emitting device on the chip accommodating portion (23) formed on the electrode separating wall (31) and reflowing the first bonding medium (B1) and the second bonding medium (B2) (Step S5).

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: Light emitting element
20: Lead frame
21: first electrode
22: second electrode
B1: First bonding medium
B2: Second bonding medium
21a:
22a:
23:
30: Reflective bag material
31: Electrode separation wall
32: reflection cup portion
40: Filler
50: light guide plate
100, 200, 300, 400, 500: Light emitting device package
1000: Backlight unit

Claims (9)

A flip chip type light emitting device having a first pad and a second pad;
A lead frame having a first electrode provided on one side of the electrode separation space, a second electrode provided on the other side of the electrode assembly, and a light emitting element mounted on the lead frame;
A first bonding medium disposed between the first pad and the first electrode so that the first pad of the light emitting device and the first electrode of the lead frame are electrically connected;
A second bonding medium disposed between the second pad and the second electrode such that the second pad of the light emitting device and the second electrode of the lead frame are electrically connected; And
An electrode separation wall made of resin filled in the electrode separation space;
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A chip accommodating portion capable of accommodating at least a part of the light emitting element in the first electrode and the second electrode of the lead frame and the electrode separating wall so that the light emitting element can be aligned on the lead frame and the electrode separating wall, Further,
At least one first receiving portion capable of receiving the first bonding medium is formed on one side of the bottom surface of the chip accommodating portion,
At least one second accommodating portion capable of accommodating the second bonding medium is formed on the other side of the bottom surface of the chip accommodating portion,
And the first housing portion and the second housing portion are divided by the electrode dividing wall. delete The method according to claim 1,
Wherein the first accommodating portion is formed between the first electrode of the lead frame and the electrode separating wall so that a part of the electrode separating wall is in direct contact with the first bonding medium,
Wherein the second accommodating portion is formed between the second electrode of the lead frame and the electrode separating wall so that another portion of the electrode separating wall can be in direct contact with the second bonding medium. The method of claim 3,
Wherein at least one inner wall surface of the chip receiving portion and at least one inner wall surface of the second receiving portion are connected to each other in the same plane,
Wherein an inner wall surface of the chip accommodating portion and a side surface of the light emitting device corresponding to the chip accommodating portion are spaced apart from each other so that air inside the chip accommodating portion can be discharged to the outside. The method according to claim 1,
Wherein the first bonding medium and the second bonding medium are solder pastes respectively applied or dispensed to the first housing portion and the second housing portion,
Wherein a plurality of the first accommodating portions are arranged in parallel along the longitudinal direction or the width direction of the first pad. The method according to claim 1,
And a reflective encapsulant for forming a reflective cup portion having a shape surrounding the side surface of the light emitting element,
Wherein the electrode separation wall is molded integrally with the reflective encapsulant and has an upper surface in a flattened or cross shape so as to be in direct contact with the light emitting element. The method according to claim 1,
Wherein the electrode separating wall has a sharp-pointed end surface that is in direct contact with the light emitting element. A flip chip type light emitting device having a first pad and a second pad;
A lead frame having a first electrode provided on one side of the electrode separation space, a second electrode provided on the other side of the electrode assembly, and a light emitting element mounted on the lead frame;
A first bonding medium disposed between the first pad and the first electrode so that the first pad of the light emitting device and the first electrode of the lead frame are electrically connected;
A second bonding medium disposed between the second pad and the second electrode such that the second pad of the light emitting device and the second electrode of the lead frame are electrically connected;
An electrode separation wall made of resin filled in the electrode separation space; And
And a light guide plate installed in a light path of the light emitting device,
A chip accommodating portion capable of accommodating at least a part of the light emitting element in the first electrode and the second electrode of the lead frame and the electrode separating wall so that the light emitting element can be aligned on the lead frame and the electrode separating wall, Further,
At least one first receiving portion capable of receiving the first bonding medium is formed on one side of the bottom surface of the chip accommodating portion,
At least one second accommodating portion capable of accommodating the second bonding medium is formed on the other side of the bottom surface of the chip accommodating portion,
Wherein the first housing portion and the second housing portion are separated by the electrode dividing wall. A first electrode is provided on one side of the electrode separation space, a second electrode is provided on the other side, and a chip accommodating portion capable of accommodating at least a part of the light emitting element is formed on the first electrode and the second electrode Preparing a lead frame;
Molding the electrode separation wall in which a chip accommodating portion capable of accommodating at least a part of the light emitting device is formed by filling the electrode separation space with resin;
Applying or dispensing a first bonding medium and a second bonding medium to a bottom surface of the chip accommodating portion;
Placing the light emitting element on the first electrode, the second electrode, and the chip receiving portion formed in the electrode dividing wall so that at least a part of the light emitting element is received in the chip receiving portion; And
Reflowing the first bonding medium and the second bonding medium;
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At least one first receiving portion capable of receiving the first bonding medium is formed on one side of the bottom surface of the chip accommodating portion,
At least one second accommodating portion capable of accommodating the second bonding medium is formed on the other side of the bottom surface of the chip accommodating portion,
Wherein the first housing portion and the second housing portion are divided by the electrode dividing wall.

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