KR101578752B1 - Light emitting device package, backlight unit, illumination device and its manufacturing method - Google Patents

Light emitting device package, backlight unit, illumination device and its manufacturing method Download PDF

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Publication number
KR101578752B1
KR101578752B1 KR1020130142035A KR20130142035A KR101578752B1 KR 101578752 B1 KR101578752 B1 KR 101578752B1 KR 1020130142035 A KR1020130142035 A KR 1020130142035A KR 20130142035 A KR20130142035 A KR 20130142035A KR 101578752 B1 KR101578752 B1 KR 101578752B1
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KR
South Korea
Prior art keywords
electrode
substrate
light emitting
emitting device
conductive bonding
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KR1020130142035A
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Korean (ko)
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KR20150059198A (en
Inventor
오승현
조성식
임정아
윤성열
이지연
김인수
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주식회사 루멘스
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Priority to KR1020130142035A priority Critical patent/KR101578752B1/en
Priority to PCT/KR2014/011210 priority patent/WO2015076591A1/en
Priority to US15/038,042 priority patent/US9831407B2/en
Publication of KR20150059198A publication Critical patent/KR20150059198A/en
Application granted granted Critical
Publication of KR101578752B1 publication Critical patent/KR101578752B1/en
Priority to US15/792,523 priority patent/US10074788B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, an illumination device, and a method of manufacturing a light emitting device package, which can be used for display or illumination. A substrate having a first electrode on one side and a second electrode on the other side based on an electrode separation space; A first conductive bonding member mounted on a first electrode of the substrate so as to be electrically connected to the first terminal of the light emitting device; A second conductive bonding member mounted on a second electrode of the substrate so as to be electrically connected to the second terminal of the light emitting device; A reflective encapsulant that is molded in the substrate to form a reflective cup portion that reflects light emitted from the light emitting device and is filled in the electrode separation space to form an electrode separator; And a filler filled between the reflective cup portion and the first conductive bonding member and the second conductive bonding member.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, an illumination device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, a lighting device, and a method of manufacturing a light emitting device package, and more particularly to a light emitting device package, a backlight unit, And a manufacturing method thereof.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to shock and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so that they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

However, in a conventional light emitting device package, when a flip chip type light emitting device is attached to a substrate, due to the characteristics of a light emitting device package that is exposed to a high temperature environment for a long time, thermal stress There is a problem that cracks are generated in the light emitting element or the bonding member is broken.

In addition, in the conventional light emitting device package, the filling material filled in the reflection cup portion is not sufficiently filled in the space between the light emitting device and the substrate, and bubbles are formed, thereby greatly degrading the product performance.

Disclosure of Invention Technical Problem [8] The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a reflective encapsulant of white EMC material capable of forming a reflective cup portion and an electrode separation portion, It is possible to minimize the thermal stress by molding on the substrate and prevent the formation of bubbles in the filling material by using the centrifugal force and to improve the terminal structure of the light emitting device to prevent breakage or damage of the light emitting device or the bonding member due to thermal stress A backlight unit, a lighting device, and a method of manufacturing a light emitting device package. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a light emitting device package including: a flip chip type light emitting device having a first terminal and a second terminal; A substrate having a first electrode on one side and a second electrode on the other side based on an electrode separation space; A first conductive bonding member mounted on a first electrode of the substrate so as to be electrically connected to the first terminal of the light emitting device; A second conductive bonding member mounted on a second electrode of the substrate so as to be electrically connected to the second terminal of the light emitting device; A reflective encapsulant that is molded in the substrate to form a reflective cup portion that reflects light emitted from the light emitting device and is filled in the electrode separation space to form an electrode separator; And a filler filled between the reflective cup portion and the first conductive bonding member and the second conductive bonding member.

According to an aspect of the present invention, the reflective encapsulant may be a white EMC (Epoxy Molding Compound) or a SMC (Silicone Molding Compound) which is a thermosetting resin having a thermal expansion coefficient difference of less than 80% have.

According to an aspect of the present invention, the first conductive bonding member may be provided on the first electrode of the substrate so as to be electrically connected to the first terminal of the light emitting device, and may be dotted And the second conductive bonding member is mounted on the second electrode of the substrate so as to be electrically connected to the second terminal of the light emitting device, And may be a second solder cream having a dotting viscosity mixed with a liquid solvent so as to be dotted by a dipping pin.

According to an aspect of the present invention, the height of the electrode separator may be higher than the height of the substrate.

Further, according to an aspect of the present invention, the filler may be one selected from at least one of silicon, transparent epoxy, phosphor, and combinations thereof.

According to an aspect of the present invention, the filling material may be filled between the first conductive bonding member and the second conductive bonding member by centrifugal force.

According to an aspect of the present invention, there is provided a backlight unit including: a light emitting device in the form of a flip chip having a first terminal and a second terminal; A substrate having a first electrode on one side and a second electrode on the other side based on an electrode separation space; A first conductive bonding member mounted on a first electrode of the substrate so as to be electrically connected to the first terminal of the light emitting device; A second conductive bonding member mounted on a second electrode of the substrate so as to be electrically connected to the second terminal of the light emitting device; A reflective encapsulant that is molded in the substrate to form a reflective cup portion that reflects light emitted from the light emitting device and is filled in the electrode separation space to form an electrode separator; A filler filled between the reflective cup portion and the first conductive bonding member and the second conductive bonding member; And a light guide plate installed in an optical path of the light emitting device.

According to an aspect of the present invention, there is provided an illumination device including: a light emitting device in the form of a flip chip having a first terminal and a second terminal; A substrate having a first electrode on one side and a second electrode on the other side based on an electrode separation space; A first conductive bonding member mounted on a first electrode of the substrate so as to be electrically connected to the first terminal of the light emitting device; A second conductive bonding member mounted on a second electrode of the substrate so as to be electrically connected to the second terminal of the light emitting device; A reflective encapsulant that is molded in the substrate to form a reflective cup portion that reflects light emitted from the light emitting device and is filled in the electrode separation space to form an electrode separator; And a filler filled between the reflective cup portion and the first conductive bonding member and the second conductive bonding member.

According to an aspect of the present invention, there is provided a method of manufacturing a light emitting device package, the method including preparing a substrate having a first electrode on one side and a second electrode on the other side based on an electrode separation space; Molding a reflective encapsulant, which is capable of forming a reflective cup part and filled in the electrode separation space to form an electrode separation part, onto the substrate; The first conductive bonding member may be bonded to the first electrode of the substrate so as to be electrically connected to the first terminal of the flip chip type light emitting device and the second conductive bonding member may be electrically connected to the second terminal of the light emitting device, Bonding a second conductive bonding member to the electrode; Placing the light emitting device on the substrate; Reflowing the substrate while simultaneously curing the multi-step temperature of the substrate so that the first conductive bonding member and the second conductive bonding member are cured; And filling the filler into the reflection cup portion.

According to an aspect of the present invention, after the step of filling the filler in the reflection cup portion, the substrate is rotated such that the filler is filled between the first conductive bonding member and the second conductive bonding member, The method comprising the steps of:

According to some embodiments of the present invention as described above, it is possible to improve the structure and material of the reflective encapsulant material to minimize thermal stress, prevent the formation of bubbles in the encapsulant by using centrifugal force, It is possible to prevent breakage or damage of the light emitting device or the bonding member due to thermal stress and to improve the durability of the product by facilitating the bonding of the flip chip and to maximize the mass productivity and productivity of the flip chip light emitting device product . Of course, the scope of the present invention is not limited by these effects.

1 is a cross-sectional view conceptually showing a light emitting device package according to some embodiments of the present invention.
FIGS. 2 to 5 are cross-sectional views illustrating steps of installing the first solder cream and the second solder cream of the light emitting device package of FIG. 1;
6 is a perspective view showing the dozing pin of Fig.
7 is a plan view showing the substrate of the light emitting device package of FIG.
8 is a perspective view of the light emitting device package of FIG.
9 is a perspective view illustrating an example of a reflow process of the light emitting device package of FIG.
10 is a plan view showing an example of a filler filling process of the light emitting device package of FIG.
11 is a cross-sectional view conceptually showing a backlight unit according to some embodiments of the present invention.
12 is a flowchart showing a method of manufacturing a light emitting device package according to some embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified in various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a cross-sectional view conceptually showing a light emitting device package 100 according to some embodiments of the present invention. 2 to 5 are sectional views showing the steps of installing the first solder cream 31-1 and the second solder cream 32-1 of the light emitting device package 100 of FIG. FIG. 7 is a plan view showing the substrate 20 of the light emitting device package 100 of FIG. 3, and FIG. 8 is a perspective view of the light emitting device package of FIG.

1 to 8, a light emitting device package 100 according to some embodiments of the present invention includes a light emitting device 10, a substrate 20, a bonding member 30, A reflective encapsulant 40, and a filler material 50. [0035]

Here, the light emitting device 10 may be a flip chip type LED (Light Emitting Diode) having a first terminal 11 and a second terminal 12 on a lower surface thereof, as shown in FIG.

The light emitting device 10 may be made of a semiconductor, as shown in FIGS. 1 to 8. For example, LEDs of blue, green, red, and yellow light emission, and LEDs of ultraviolet light emission, which are made of a nitride semiconductor, can be applied. The nitride semiconductor is represented by a general formula Al x Ga y In z N (0? X? 1, 0? Y? 1, 0? Z? 1, x + y + z = 1).

The light emitting device 10 may be formed by epitaxially growing nitride semiconductors such as InN, AlN, InGaN, AlGaN, and InGaAlN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD To grow. The light emitting element 10 may be formed using a semiconductor such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, or AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. Further, the light emitting element 10 can be selected to have an arbitrary wavelength depending on applications such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl 2 O 4, MgO, LiAlO 2, LiGaO 2, GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

In addition, since the silicon (Si) substrate absorbs light generated from the GaN-based semiconductor and the external quantum efficiency of the light emitting device is lowered, the substrate may be removed as necessary, and Si, Ge, SiAl, A support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

Herein, the buffer layer may be made of Al x In y Ga 1-xy N (0? X? 1, 0? Y? 1, x + y? 1), in particular GaN, AlN, AlGaN, InGaN or InGaNAlN. Materials such as ZrB2, HfB2, ZrN, HfN and TiN can also be used as needed. Further, a plurality of layers may be combined, or the composition may be gradually changed.

Although not shown, the light emitting element 10 may be in the form of a flip chip having a signal transmitting medium such as a bump, a pad, or a solder. In addition, the first and second terminals The light emitting elements to which the bonding wire is applied, or to which the bonding wire is applied to only the first terminal or the second terminal partially can all be applied.

As shown in FIG. 1, the light emitting device 10 may be provided on the substrate 20, or may be provided on the substrate 20.

1, the substrate 20 includes a lead frame in which a first electrode 21 is formed on one side and a second electrode 22 is formed on the other side with reference to an electrode separation space .

The substrate 20 may be made of a material having a suitable mechanical strength and insulation and a conductive material so as to support the light emitting device 10.

For example, the substrate 20 may be a metal substrate such as an insulated aluminum, copper, zinc, tin, lead, gold, or silver, and may be a plate or a lead frame.

In addition, the substrate 20 may be a printed circuit board (PCB) having a plurality of epoxy resin sheets formed thereon. In addition, the substrate 20 may be a Flexible Printed Circuit Board (FPCB) made of a flexible material.

In addition, the substrate 20 may be a synthetic resin substrate such as resin or glass epoxy, or a ceramic substrate in consideration of thermal conductivity.

The substrate 20 may be formed by partially or wholly selecting at least one of EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber and combinations thereof in order to improve workability Lt; / RTI >

Meanwhile, the bonding member 30 can electrically connect the light emitting device 10 and the substrate 20 to each other.

For example, as shown in FIGS. 1 to 8, the bonding member 30 may include a first conductive bonding member 31 and a second conductive bonding member 32.

That is, the first conductive bonding member 31 is electrically connected to the first terminal 11 of the light emitting device 10 by a bonding member (not shown) provided on the first electrode 21 of the substrate 20, Lt; / RTI >

The second conductive bonding member 32 may be a bonding member provided on the second electrode 22 of the substrate 20 so as to be electrically connected to the second terminal 12 of the light emitting device 10, Lt; / RTI >

2 to 5, the first conductive bonding member 31 may be electrically connected to the first terminal 11 of the light emitting device 10, for example, The first solder cream 31-1 is provided on the first electrode 21 of the solder cream 20 and is mixed with a liquid solvent so as to be dotted by the dicing pin DP, ).

2 to 5, the second conductive bonding member 32 may be electrically connected to the second terminal 12 of the light emitting device 10, The first solder cream 32-1 may be a second solder cream 32-1 provided on the second electrode 22 and mixed with a liquid solvent so as to be dotted by the dipping pin DP and having a dipping viscosity.

Therefore, as shown in FIG. 2, the solder cream contained in the plating liquid container (not shown) is dipped into the dosing pins DP to form the first solder cream 31-1 in the shape of a drop 3, after the forming of the first solder cream DP (FIG. 3), the first soldering cream DP attached to the tip of the dosing pin DP is lowered 31-1 may be diced onto the substrate 20.

6, a plurality of first solder creams 31-1 are simultaneously dots-dotted on the surface of the first electrode 21 of the substrate 20, The solder creams 31-1 may be formed so as to stick together. In addition, the first solder creams 31-1 may not be attached to each other and may be spaced apart from each other.

Next, as shown in FIG. 3, the solder cream contained in the plating solution receiving container (not shown) is photographed by the dosing pins (DP), and the second solder cream (32-1) The dowel pins DP are lowered to form the second solder cream 32 on the tip of the dowel pin DP as shown in Fig. -1) may be applied to the substrate 20.

Here, a plurality of the second solder creams 32-1 may be simultaneously dot-dented on the surface of the second electrode 22 of the substrate 20.

In addition, the first solder cream 31-1 and the second solder cream 32-1 may be simultaneously diced.

The method of applying the solder cream to the substrate 20 using the precise dicing pin DP may be a super precision transferring method or a super precision stamping method. In addition, an inkjet printing method, a stencil printing method, the solder cream may be applied to the substrate 20 by various printing methods such as a stencil printing method and a squeeze printing method.

The reflective encapsulant 40 may be molded in the substrate 20 to form a reflective cup portion C that reflects light generated in the light emitting device 10, Thereby forming the electrode separating portion 41. [0064]

The reflective encapsulant 40 may be a thermosetting resin having a difference in thermal expansion coefficient from the first electrode 21 and the second electrode 22 of the substrate 20 to a thermal expansion coefficient of 80% or less , For example, white EMC (Epoxy Molding Compound) or SMC (Silicone Molding Compound).

That is, when the thermal expansion coefficient of the first electrode 21 and the second electrode 22 of the substrate 20 is approximately 10 ppm / ° C, the difference in thermal expansion coefficient between conventional resins and the second electrode 22 is approximately 50 ppm / The thermal expansion coefficient of the white EMC is 30 ppm / ° C. at the maximum. Experimentally, the first electrode 21 and the second electrode 22 of the substrate 20 were experimentally found to have a problem that the components were damaged or damaged due to excessive thermal stress. ) Is less than 80 percent, thermal stress can be minimized to prevent breakage or damage of the component.

1, the electrode separation portion 41 is formed such that the height H2 of the electrode separation portion 41 is greater than the height H2 of the substrate 20 The height H1 of the first and second guide grooves 22, Accordingly, when the electrode separator 41 is diced by the first solder cream 31-1 and the second solder cream 32-1, the first solder cream 31-1 and the second solder cream 32-1, It is possible to form a separation wall of the cream 32-1 to prevent a shot defect and to guide the first solder cream 31-1 and the second solder cream 32-1 to a predetermined position . However, the shape of the reflective encapsulant 40 can be variously modified, and for example, the two heights H1 and H2 may be the same as the height of the substrate 20.

In addition, the reflective encapsulant 40 may be an epoxy resin composition, a silicone resin composition, a modified epoxy resin composition, a modified silicone resin composition, a polyimide resin composition, a modified polyimide resin composition, a polyphthalamide (PPA), a polycarbonate resin , A polyphenylene sulfide (PPS), a liquid crystal polymer (LCP), an ABS resin, a phenol resin, an acrylic resin, a PBT resin, a Bragg reflection layer, an air gap, It can be done by selecting more than one.

The reflective encapsulant 40 may be made of at least one selected from the group consisting of EMC including a reflective material, white silicon containing a reflective material, a photoimageable solder resist (PSR), and combinations thereof.

More specifically, for example, the reflective encapsulant 40 may be a silicone resin composition, a modified epoxy resin composition such as a silicone modified epoxy resin, a modified silicone resin composition such as an epoxy modified silicone resin, a polyimide resin composition , Modified polyimide resin composition, resin such as polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin and PBT resin have.

It is also possible to add a light reflecting material such as titanium oxide, silicon dioxide, titanium dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, chromium, have.

The filling material 50 is a material to be filled between the reflective cup portion C and the first conductive bonding member 31 and the second conductive bonding member 32, Can be fenced or applied.

The filling material 50 may be at least one selected from the group consisting of at least silicon, a transparent epoxy, a fluorescent material, and a combination thereof, the material of which is relatively small in particle size and can be filled between the light emitting device 10 and the substrate 20 It can be done by selecting one or more.

In addition, the filler 50 may include a phosphor.

Here, the phosphor may have the following composition formula and color.

Oxide system: yellow and green Y3Al5O12: Ce, Tb3Al5O12: Ce, Lu3Al5O12: Ce

(Ba, Sr) 2SiO4: Eu, yellow and orange (Ba, Sr) 3SiO5: Ce

Eu, Sr2Si5N8: Eu, SrSiAl4N7: Eu, Eu3O3: Eu, Eu3O3: Eu,

The composition of the phosphor should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

As a substitute for the phosphor, materials such as a quantum dot may be used. Alternatively, a fluorescent material and QD may be mixed with the LED or used alone.

QD can be composed of a core (3 to 10 nm) such as CdSe and InP, a shell (0.5 to 2 nm) such as ZnS and ZnSe, and a ligand for stabilizing the core and the shell. Can be implemented.

In addition, the coating method of the fluorescent material or the quantum dot may include at least one of a method of being applied to an LED chip or a light emitting device, a method of covering the material in a film form, a method of attaching a sheet form such as a film or a ceramic fluorescent material .

Dispensing and spray coating are common methods of spraying, and dispensing includes mechanical methods such as pneumatic method and screw, linear type. It is also possible to control the amount of dyeing through a small amount of jetting by means of a jetting method and control the color coordinates thereof. The method of collectively applying the phosphor on the wafer level or the light emitting device substrate by the spray method can easily control productivity and thickness.

The method of directly covering the light emitting device or the LED chip in a film form can be applied by a method of electrophoresis, screen printing or phosphor molding, and the method can be different according to necessity of application of the side of the LED chip.

In order to control the efficiency of the long-wavelength light-emitting phosphor that reabsers light emitted from a short wavelength among two or more kinds of phosphors having different emission wavelengths, two or more kinds of phosphor layers having different emission wavelengths can be distinguished. A DBR (ODR) layer may be included between each layer to minimize absorption and interference.

In order to form a uniform coating film, the phosphor may be formed into a film or ceramic form and then attached onto the LED chip or the light emitting device.

In order to make a difference in light efficiency and light distribution characteristics, a photoelectric conversion material may be located in a remote format. In this case, the photoelectric conversion material is located together with a transparent polymer, glass, or the like depending on its durability and heat resistance.

Since the phosphor coating technique plays a major role in determining the optical characteristics in the light emitting device, control techniques such as the thickness of the phosphor coating layer and the uniform dispersion of the phosphor have been studied variously. QD can also be placed in the LED chip or the light emitting element in the same manner as the phosphor, and can be positioned between the glass or translucent polymer material for light conversion.

9 is a perspective view showing an example of a reflow process of the light emitting device package 100 of FIG.

As shown in FIG. 9, the light emitting device package 100 of FIG. 1 prevents foreign substances such as flux and fume that may occur in the solder cream described above during the reflow process from contaminating the substrate A reflow apparatus (RL) capable of removing fumes while controlling the temperature in multiple stages can be used.

For example, the reflow apparatus RL may include a plurality of step-by-step process chambers R1, R2, R3, and R4. Here, the processing chambers R1, R2, R3, and R4 may be sequentially installed to allow the light emitting device package 100 or the strips to be transported inline, and may be formed as a partition, a separating wall, So that the temperature environment of the process chambers of the process chambers can be differentiated.

As shown in the temperature graph of FIG. 9, the processing chambers R1, R2, R3, and R4 are divided into a first temperature T1 and a second temperature T1 by using individually controlled heaters The light emitting device package 100 or strips that are transported inline while maintaining the first temperature T3, the second temperature T2, the third temperature T3, and the fourth temperature T4 may be heated or cooled step by step.

More specifically, as shown in FIG. 9, the second temperature (T2) may be higher than the first temperature (T1), the third temperature (T3) may be higher than the second temperature, The fourth temperature T4 may be equal to the first temperature T1.

Therefore, the fume gas or the like discharged from the light emitting device package 100 or the strips is discharged to the outside along the discharge line in a multistage manner to prevent foreign substances such as flux and fume from contaminating the substrate A separate cleaning process may be unnecessary.

10 is a plan view showing an example of a filler filling process of the light emitting device package 100 of FIG.

10, the filling material 50 is filled between the first conductive bonding member 31 and the second conductive bonding member 32 by the centrifugal force F of the centrifugal pressing machine M, . Here, the centrifugal extruder M may be provided with a separate gas exhaust device for discharging fume gas generated in the filling material to the outside.

11 is a cross-sectional view conceptually showing a backlight unit 1000 according to some embodiments of the present invention.

11, the backlight unit 1000 according to some embodiments of the present invention includes a flip chip type light emitting device 10 having a first terminal 11 and a second terminal 12, A substrate 20 on which a first electrode 21 is formed on one side and a second electrode 22 is formed on the other side with reference to an electrode separation space and a substrate 20 electrically connected to the first terminal 11 of the light emitting device 10 A first conductive bonding member 31 mounted on the first electrode 21 of the substrate 20 so as to be connected to the second terminal 12 of the light emitting device 10, A second conductive bonding member 32 provided on the second electrode 22 of the light emitting device 20 and a reflecting cup portion C reflecting the light generated from the light emitting device 10, A reflective encapsulant 40 which is molded in the electrode separating space and filled in the electrode separating space to form an electrode separator 41, A filler 50 filled between the conductive bonding member 31 and the second conductive bonding member 32 and a light guide plate 90 provided in the optical path of the light emitting device 10.

Here, the light emitting device 10, the substrate 20, the first conductive bonding member 31, the second conductive bonding member 32, the reflective encapsulant 40, and the filler 50 may be the same in function and configuration as the components of the light emitting device package 100 according to some embodiments of the present invention as shown in FIG. Therefore, detailed description is omitted.

In addition, the light guide plate 90 may be an optical member that can be made of a light-transmitting material to guide light generated from the light emitting device 10.

The light guide plate 90 may be installed in a path of light generated by the light emitting device 10 to transmit light generated by the light emitting device 10 over a wider area.

The light guide plate 90 may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like , And various light transmitting resin materials may be applied. In addition, the light guide plate 90 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

Although not shown, various diffusion sheets, prism sheets, filters, and the like may be additionally provided above the light guide plate 90. In addition, various display panels such as an LCD panel may be installed above the light guide plate 90.

Although not shown, the present invention may include a lighting device including the light emitting device package 100 described above. Here, the components of the lighting apparatus according to some embodiments of the present invention may have the same configuration and functions as those of the above-described light emitting device package of the present invention. Therefore, detailed description is omitted.

12 is a flowchart showing a method of manufacturing a light emitting device package according to some embodiments of the present invention.

12, a method of fabricating a light emitting device package according to some embodiments of the present invention includes forming a first electrode 21 on one side and a second electrode 22 on the other side with reference to an electrode separation space And a reflective encapsulation material 40 filling the electrode separation space to form the electrode separation portion 41 is formed on the substrate 20, (21) of the substrate (20) so as to be electrically connected to the first terminal (11) of the flip chip type light emitting device (10) Bonding the second conductive bonding member 32 to the second electrode 22 of the substrate so that the bonding member 31 is electrically connected to the second terminal 12 of the light emitting device 10, (S4) placing the light emitting device (10) on the substrate (20), and attaching the first conductive bonding member (31) (S5) of reflowing the substrate (20) in multiple stages so that the conductive bonding member (32) is cured, a step (S6) of filling the filler (50) in the reflection cup portion (C) (S7) applying centrifugal force to the filler (50) by rotating the substrate (20) so that the first conductive bonding member (31) is filled between the first conductive bonding member (31) and the second conductive bonding member .

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: Light emitting element
11: First terminal
12: second terminal
20: substrate
21: first electrode
22: second electrode
30:
31: first conductive bonding member
31-1: First solder cream
32: second conductive bonding member
32-1: Second solder cream
C: Reflective cup portion
40: Reflective bag material
41; Electrode separation portion
50: packing
DP:
H1, H2; Height
RL: Reflow device
R1, R2, R3, R4: Process chamber
M: Centrifugal pressurizer
F: Centrifugal force
90: light guide plate
100: Light emitting device package
1000: Backlight unit

Claims (10)

A flip chip type light emitting device having a first terminal and a second terminal;
A substrate having a first electrode on one side and a second electrode on the other side based on an electrode separation space;
A first conductive bonding member mounted on a first electrode of the substrate so as to be electrically connected to the first terminal of the light emitting device;
A second conductive bonding member mounted on a second electrode of the substrate so as to be electrically connected to the second terminal of the light emitting device;
A reflective encapsulant that is molded in the substrate to form a reflective cup portion that reflects light emitted from the light emitting device and is filled in the electrode separation space to form an electrode separator; And
A filler filled between the reflective cup portion and the first conductive bonding member and the second conductive bonding member;
/ RTI >
The reflective encapsulant is a white EMC (Epoxy Molding Compound) or a SMC (Silicone Molding Compound) which is a thermosetting resin having a thermal expansion coefficient within a range of 80% or less of the thermal expansion coefficient of the substrate,
Wherein the height of the electrode separating portion is higher than the height of the substrate and the filling material is guided to a space between the electrode separating portion and the light emitting element that has been raised by the centrifugal force so that the first conductive bonding material and the second conductive bonding material And the light emitting device package is filled between the light emitting device package and the light emitting device package. delete The method according to claim 1,
Wherein the first conductive bonding member comprises:
A first solder cream (not shown) having a dotting viscosity is provided on the first electrode of the substrate so as to be electrically connected to the first terminal of the light emitting device, and mixed with a liquid solvent so as to be dotted by a dipping pin, cream,
Wherein the second conductive bonding member comprises:
A second solder cream having a dotting viscosity, which is mixed with a liquid solvent so as to be dotted by a dipping pin, is provided on a second electrode of the substrate so as to be electrically connected to a second terminal of the light emitting device, cream. delete The method according to claim 1,
Wherein the filler comprises at least one selected from the group consisting of silicon, transparent epoxy, phosphor, and combinations thereof. delete A flip chip type light emitting device having a first terminal and a second terminal;
A substrate having a first electrode on one side and a second electrode on the other side based on an electrode separation space;
A first conductive bonding member mounted on a first electrode of the substrate so as to be electrically connected to the first terminal of the light emitting device;
A second conductive bonding member mounted on a second electrode of the substrate so as to be electrically connected to the second terminal of the light emitting device;
A reflective encapsulant that is molded in the substrate to form a reflective cup portion that reflects light emitted from the light emitting device and is filled in the electrode separation space to form an electrode separator;
A filler filled between the reflective cup portion and the first conductive bonding member and the second conductive bonding member; And
A light guide plate installed in an optical path of the light emitting element;
/ RTI >
The reflective encapsulant is a white EMC (Epoxy Molding Compound) or a SMC (Silicone Molding Compound) which is a thermosetting resin having a thermal expansion coefficient difference of less than 80 percent with respect to a thermal expansion coefficient of the substrate,
Wherein the height of the electrode separating portion is higher than the height of the substrate and the filling material is guided to a space between the electrode separating portion and the light emitting element that has been raised by the centrifugal force so that the first conductive bonding material and the second conductive bonding material Wherein the backlight unit is filled between the backlight unit and the member. A flip chip type light emitting device having a first terminal and a second terminal;
A substrate having a first electrode on one side and a second electrode on the other side based on an electrode separation space;
A first conductive bonding member mounted on a first electrode of the substrate so as to be electrically connected to the first terminal of the light emitting device;
A second conductive bonding member mounted on a second electrode of the substrate so as to be electrically connected to the second terminal of the light emitting device;
A reflective encapsulant that is molded in the substrate to form a reflective cup portion that reflects light emitted from the light emitting device and is filled in the electrode separation space to form an electrode separator; And
A filler filled between the reflective cup portion and the first conductive bonding member and the second conductive bonding member;
/ RTI >
The reflective encapsulant is a white EMC (Epoxy Molding Compound) or a SMC (Silicone Molding Compound) which is a thermosetting resin having a thermal expansion coefficient difference of less than 80 percent with respect to a thermal expansion coefficient of the substrate,
Wherein the height of the electrode separating portion is higher than the height of the substrate and the filling material is guided to a space between the electrode separating portion and the light emitting element that has been raised by the centrifugal force so that the first conductive bonding material and the second conductive bonding material And is filled between the members. Preparing a substrate having a first electrode on one side and a second electrode on the other side based on an electrode separation space;
Which is a thermosetting resin having a thermal expansion coefficient of less than 80%, which is different from a thermal expansion coefficient of the substrate, which is capable of forming a reflective cup portion and which is filled in the electrode separation space and which has an electrode separation portion higher than the height of the substrate, Epoxy Molding Compound) or SMC (Silicone Molding Compound) onto the substrate;
The first conductive bonding member may be bonded to the first electrode of the substrate so as to be electrically connected to the first terminal of the flip chip type light emitting device and the second conductive bonding member may be electrically connected to the second terminal of the light emitting device, Bonding a second conductive bonding member to the electrode;
Placing the light emitting device on the substrate;
Reflowing the substrate so that the first conductive bonding member and the second conductive bonding member are hardened; And
And filling the filler into the reflection cup portion,
After filling the filler into the reflection cup,
Applying a centrifugal force to the filler by rotating the substrate to be filled between the first conductive bonding member and the second conductive bonding member by being guided to a space between the electrode separator and the light emitting device where the filler is raised;
Emitting device package. delete
KR1020130142035A 2013-11-21 2013-11-21 Light emitting device package, backlight unit, illumination device and its manufacturing method KR101578752B1 (en)

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PCT/KR2014/011210 WO2015076591A1 (en) 2013-11-21 2014-11-20 Light-emitting device package, backlight unit, lighting device, and method for manufacturing light-emitting device package
US15/038,042 US9831407B2 (en) 2013-11-21 2014-11-20 Light emitting device package, backlight unit, illumination apparatus, and method of manufacturing light emitting device package
US15/792,523 US10074788B2 (en) 2013-11-21 2017-10-24 Light emitting device package, backlight unit, illumination apparatus, and method of manufacturing light emitting device package

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CN111474768A (en) * 2020-04-21 2020-07-31 Tcl华星光电技术有限公司 Backlight module, preparation method thereof and display device

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KR20100077865A (en) * 2008-12-29 2010-07-08 서울반도체 주식회사 Light emitting device
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KR20120091839A (en) * 2011-02-10 2012-08-20 삼성전자주식회사 Flip chip light emitting device package and manufaturing method thereof
KR20130080299A (en) * 2012-01-04 2013-07-12 엘지이노텍 주식회사 Light emitting device package, back light unit and display unit

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