KR20220001086A - light emitting device - Google Patents

Abstract

A light emitting device is disclosed. The light emitting device includes: a package body having a molding portion including a cavity and a first lead terminal and a second lead terminal extending from the bottom surface to an outer surface of the cavity and formed on a lower surface of the molding portion; an LED chip mounted on the bottom surface in the cavity; and an encapsulant formed in the cavity to cover the LED chip, wherein the LED chip includes: a sapphire substrate having an upper surface and a lower surface; a semiconductor stack portion formed on the lower surface of the sapphire substrate and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; a first electrode pad formed on a lower surface of the semiconductor stack portion and connected to the first conductivity-type semiconductor layer; a second electrode pad formed on the lower surface of the semiconductor stack portion and connected to the second conductivity-type semiconductor layer; and a release layer formed on the upper surface of the sapphire substrate. In the light emitting device according to the present invention, it is suppressed that the flip chip LED chip is lifted together with the silicone encapsulant when the silicone encapsulant is expanded by heat.

Description

light emitting device

The present invention relates to a light emitting device, and more particularly, comprising a flip-chip LED chip and a silicone encapsulant covering the same, and suppressing the flip-chip LED chip being lifted together with the silicone encapsulant when the silicone encapsulant is expanded by heat Thus, it relates to a light emitting device that solves the problems caused by it.

A package type light emitting device or a chip-on-board type light emitting device including a flip chip type LED chip and a silicon encapsulant for encapsulating the flip chip type LED chip is known.

In general, a flip-chip type LED chip includes a semiconductor stacking part, a sapphire substrate formed on the semiconductor stacking part, and first and second electrode pads formed under the semiconductor stacking part. In addition, the semiconductor stack includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and each of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer is connected to the first electrode pad and the second electrode pad, respectively. do. Since the first conductivity type semiconductor layer is interposed between the structure including the active layer and the second conductivity type semiconductor layer and the sapphire substrate, the second conductivity type semiconductor layer and a part of the active layer are partially removed, for example, by mesa etching, and the removal thereof The first conductive type semiconductor layer and the first electrode pad are connected through the portion.

The package type light emitting device includes a molding part having a cavity in which the aforementioned flip chip type LED chip is accommodated, and a first lead terminal and a second lead terminal. In the flip-chip type LED chip, a first electrode pad is bonded to a first lead terminal and a second electrode pad is bonded to a second lead terminal by a primary SMT process. The silicone encapsulant is formed by a silicone resin filled in the cavity to cover the flip-chip type LED chip. In the package type light emitting device as described above, the first lead terminal and the second lead terminal extending below the molding part are bonded to the first electrode and the second electrode on the substrate through a secondary SMT process, respectively.

However, during the secondary SMT process, the internal temperature of the cavity also rises, so that the solder connecting the first lead terminal and the first electrode pad and the solder connecting the second lead terminal and the second electrode pad are re-melted, At this time, as the silicone encapsulant expands by heat, the flip-chip type LED chip bonded to the silicon encapsulant is lifted. Due to such unintentional lifting, an electrical connection between the first electrode pad and the first lead terminal or an electrical connection between the second electrode pad and the second lead terminal may be broken. In addition, the light emitting device may cause lifting of the flip chip LED chip and non-illuminating blockage due to expansion of the silicone encapsulant due to heat generated during operation of the flip chip LED chip even during use after completion of manufacturing.

As another type of light emitting device, there is a chip-on-board type light emitting device in which one or more flip-type LED chips are directly bonded to a substrate such as a PCB. In such a chip-on-board type light emitting device, a silicon encapsulant is formed on the substrate to cover the plurality of LED chips as a whole or individually. The silicone encapsulant may be formed by molding or may be formed by dotting.

In the art, there is a need for a technology that separates the upper surface of the LED chip and the silicone encapsulant so that the LED chip is not lifted even when the silicon encapsulant expands.

Korean Patent Registration No. 10-1578752 (2015.12.14.)

The problem to be solved by the present invention is a light emitting device comprising a flip chip LED chip and a silicone encapsulant covering the same, wherein the flip chip LED chip is suppressed from being lifted together with the silicone encapsulant when the silicone encapsulant is expanded by heat will provide

According to one aspect of the present invention, a light emitting device includes: a package body having a molding part having a cavity and first and second lead terminals extending from a bottom surface of the cavity to the outside of the cavity; an LED chip mounted on a bottom surface of the cavity; and a silicon encapsulant formed in the cavity to cover the LED chip, wherein the LED chip includes: a sapphire substrate having an upper surface and a lower surface; a first conductive semiconductor layer formed on the lower surface of the sapphire substrate; A semiconductor stack including an active layer and a second conductivity type semiconductor layer, a first electrode pad formed on a lower surface of the semiconductor stack portion and connected to the first conductivity type semiconductor layer, and formed on a lower surface of the semiconductor stack portion a second electrode pad connected to the second conductivity-type semiconductor layer; and a release layer formed on the upper surface of the sapphire substrate to separate the sapphire substrate and the silicon encapsulant.

According to an embodiment, the release layer may be a fluorine coating layer.

According to an embodiment, the release layer may be a fluorine coating layer formed by applying a fluororesin to the upper surface of the sapphire substrate and then heating and sintering at a predetermined temperature.

According to an embodiment, the release layer may be formed only on the upper surface of the sapphire substrate.

According to an embodiment, the release layer is formed to cover the upper surface of the sapphire substrate 210 and the upper side of the sapphire substrate, and the upper side of the sapphire substrate may include an inclined surface.

In an embodiment, the inner surface of the cavity includes an inclined surface, the lower end of the inclined surface is less than or equal to the lower end of the second conductivity-type semiconductor layer, and the inclined surface has a predetermined inclination from the lower end to the upper end.

A light emitting device according to another aspect of the present invention includes a mount substrate having a first electrode and a second electrode; an LED chip mounted on the mount substrate; and a silicon encapsulant formed on the mount substrate to cover the LED chip, wherein the LED chip includes a sapphire substrate having an upper surface and a lower surface, and a first conductivity-type semiconductor layer formed on the lower surface of the sapphire substrate. , a semiconductor stack including an active layer and a second conductivity type semiconductor layer, a first electrode pad formed on a lower surface of the semiconductor stack portion and connected to the first conductivity type semiconductor layer, and formed on a lower surface of the semiconductor stack portion and a second electrode pad connected to the second conductivity type semiconductor layer, and a release layer formed on the upper surface of the sapphire substrate to separate the sapphire substrate and the silicon encapsulant.

An LED chip according to an aspect of the present invention includes: a sapphire substrate including a first surface and a second surface opposite to the first surface; a semiconductor laminate formed on a first surface of the sapphire substrate and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; a first electrode pad formed on a lower surface of the semiconductor stack and connected to the first conductivity-type semiconductor layer; a second electrode pad formed on a lower surface of the semiconductor stack and connected to the second conductivity-type semiconductor layer; and a fluorine coating layer formed on the second surface of the sapphire substrate.

According to an aspect of the present invention, there is provided a method for manufacturing an LED chip, comprising: preparing a sapphire substrate including a first surface and a second surface opposite to the first surface; forming a semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially on a first surface of the sapphire substrate; forming a plurality of exposed regions in which the first conductivity type semiconductor layer is exposed by partially removing the active layer and the second conductivity type semiconductor layer from the plurality of areas; connecting first electrode pads to a first conductivity-type semiconductor layer through the plurality of exposed regions; connecting second electrode pads to second conductivity-type semiconductor layers; forming a fluorine coating layer on the second surface of the sapphire substrate; and a singulation step of dividing a structure including the sapphire substrate, the semiconductor stacked structure, the first electrode pads, and the second electrode pads from a plurality of LED chips.

The light emitting device according to the present invention includes a flip-chip type LED chip and a silicone encapsulant covering the same, but when the silicone encapsulant is expanded by heat, lifting of the flip-chip type LED chip together with the silicone encapsulant is suppressed, resulting in poor lighting solve the problem

1 is a cross-sectional view showing a package type light emitting device according to an embodiment of the present invention;
2 is a view for explaining how the silicone encapsulant of the package-type light emitting device according to an embodiment of the present invention changes when the secondary SMT progresses, after the secondary SMT progress pigment, and when the LED chip is turned on;
3 is a view for explaining a method of manufacturing an LED chip applied to the light emitting device shown in FIG. 1;
4 is a view showing a package type light emitting device according to another embodiment of the present invention.
5 is a view showing a chip-on-board type light emitting device according to another embodiment of the present invention.

Hereinafter, various embodiments of the present invention will be described with reference to the accompanying drawings. It should be noted that the accompanying drawings and embodiments are simplified and illustrated for the purpose of helping those of ordinary skill in the art to understand the present invention. In addition, it should be noted that, in the present specification, the expression "consistent", "consistent" or "consistent" is not to be construed as being limited to the meaning of exact match, but to be construed as allowing a margin of error.

1 is a cross-sectional view illustrating a package type light emitting device according to an embodiment of the present invention.

Referring to FIG. 1 , a package type light emitting device (hereinafter referred to as a 'light emitting device') according to an embodiment of the present invention is mounted on a printed circuit board (PCB), for example, with a package body 100 and an LED. It includes a chip 200 and a silicone encapsulant 300 .

In this embodiment, the package body 100 includes a molding part 120 serving as a reflector, and a first lead terminal 140 and a second lead terminal 150 formed in the molding part 120 . The molding part 120 is formed by injection molding a white, milky, or metallic colored resin material having good reflectivity, and a cavity 121 having an open top and converging downward is formed. The inner surface of the cavity 121 includes an inclined surface formed inward from top to bottom.

In addition, the first lead terminal 140 and the second lead terminal 150 are supported by the molding part 120 , and are formed on the inner bottom surface of the cavity 121 to be spaced apart from each other. 141 and the second internal terminal part 151, the first external terminal part 143 and the second external terminal part 153 formed to be spaced apart from each other on the lower outer surface of the molding part 120, and the first internal terminal part (141) and a first terminal connection part 142 for connecting the first external terminal part 143, and a second terminal connection part 152 for connecting the second internal terminal part 151 and the second external terminal part 153. includes

The LED chip 200 is a flip-chip type LED chip mounted on the bottom surface of the cavity 121, and is a first lead terminal 140 and a second lead terminal 150 respectively bonded to the first lead terminal 140 and the second lead terminal 150 by an SMT process. A first electrode pad 201 and a second electrode pad 202 are provided on the lower surface. In addition, the silicon encapsulant 300 is filled in the cavity 121 to cover the LED chip 200 . Accordingly, the upper surface of the LED chip 200 is in contact with the silicon encapsulant 300 . The silicone encapsulant 300 may include one or more types of phosphors for wavelength-converting the light generated by the LED chip 200 .

The LED chip 200 includes a sapphire substrate 210 having an upper surface that is a light emitting surface and a lower surface on the opposite side, and a semiconductor stack 220 formed on the lower surface of the sapphire substrate 210 . The semiconductor stack 220 includes gallium nitride-based semiconductor layers grown on the lower surface of the sapphire substrate 210 , and includes at least a first conductivity type semiconductor layer 222 and the first conductivity type semiconductor layer ( It includes an active layer 224 formed under the 222 , and a second conductivity-type semiconductor layer 226 formed under the active layer 224 . Since the first conductivity type semiconductor layer 222 is covered by the structure including the active layer 224 and the second conductivity type semiconductor layer 226 , the first conductivity type semiconductor layer 222 and the first electrode pad For connection with 201 , the second conductivity type semiconductor layer 226 and a portion of the active layer 224 are partially removed, for example, by mesa etching, and through the removed portion, the first conductivity type semiconductor layer 222 . ) and the first electrode pad 201 are connected. In addition, the second electrode pad 202 is formed on the second conductivity type semiconductor layer 226 and is electrically connected to the second conductivity type semiconductor layer 226 .

In addition, the LED chip 200 includes a release layer 250 formed on the upper surface of the sapphire substrate 210 so that the upper surface is separated from the surface of the silicon encapsulant 300 . The release layer 250 may be formed by coating the upper surface of the sapphire substrate 210 with a material that may not adhere well to the silicon encapsulant 300 due to low surface energy. In particular, the release layer 250 may be a hard fluorine coating layer obtained by applying a C-H combination fluororesin as a paint to the upper surface of the sapphire substrate 210 and then heating and sintering at a predetermined temperature. As a fluororesin material for forming the fluorine coating layer 250, PTFE (Polytetrafluoroethylene), SF, PFA (Perfluoroalkoxy), ETFE (Ethylene + Tetrafluoroethylene), FEP (Fluorinated Ethylene Propylene Copolymer), or other fluorine-containing resin may be considered. can

The release layer 250 , more specifically, the upper surface of the LED chip 200 may be separated without being adhered to the silicone encapsulant 300 by the fluorine coating layer. Due to this separation, a fine gap is formed between the silicone encapsulant 300 and the release layer 250 . Therefore, even if the silicon encapsulant 300 is expanded by heat generated during a secondary SMT process for mounting the LED package on a substrate such as a PCB or heat generated during a light emitting operation of the LED chip 200 while using the LED package, the LED chip 200 may not be lifted by the silicone encapsulant 300, which is the first solder 20 between the first electrode pad 201) and the first lead terminal 140 due to the lifting of the LED chip 200 ) and/or the second solder 30 between the second electrode pad 202 and the second lead terminal 150 fundamentally blocks the occurrence of non-lighting due to breakage.

As mentioned above, the molding part 120 includes a cavity 121 including an inclined surface. In this case, the inclined surface functions as a reflective surface, and it is preferable that the lower end of the inclined surface is less than or equal to the lower end of the second conductivity-type semiconductor layer 226 . This contributes to the inclined surface reflecting most of the light emitted from the side surface of the LED chip 200 upward. In addition, it is preferable that the inclined surface has a constant inclination from the bottom to the top so that the silicone encapsulant 300 rises without jamming when it expands, that is, an inclined surface without a chin. In addition, the lower end of the inclined surface is preferably positioned adjacent to the same height as the lower edge of the second conductivity-type semiconductor layer 226 . Accordingly, the cavity 121 is divided into an upper cavity surrounded by the inclined surface and a lower cavity located below it, which is the upper part of the silicone encapsulant 300 located in the upper cavity. The lower part of the silicone encapsulant 300 located in the lower cavity is raised without giving little to maintain the LED chip 300 .

2 is a view for explaining how the silicone encapsulant of the package type light emitting device according to an embodiment of the present invention changes when the secondary SMT progresses, after the secondary SMT progress pigment, and when the LED chip is turned on.

Figure 2 (a) is a package-type light emitting device in which the LED chip 200 is mounted on the package body 100 having a cavity by the first SMT process and the silicon encapsulant 300 is formed on a substrate 2 such as a PCB. It shows the state before bonding. In this state, expansion of the silicone encapsulant 300 does not occur, and the upper surface of the release layer 250 of the LED chip 200 and the silicone encapsulant 300 are almost in close contact. At this time, due to the release layer 250 , the upper surface of the release layer 250 of the LED chip 200 and the silicone encapsulant 300 remain almost non-adhesive.

FIG. 2B shows the state of the silicon encapsulant 300 well when the secondary SMT process is performed to bond the package light emitting device to the substrate 2 by the secondary SMT process. The silicone encapsulant 300 expands and deforms in a direction away from the LED chip 200 , and in this expansion deformation, a gap 5 between the upper surface of the release layer 250 of the LED chip 200 and the silicone encapsulant 300 . ) is expanded. Although the first solder 20 and the second solder 30 are remelted due to heat applied during the SMT process, since the silicone encapsulant 300 and the release layer 250 are separated, the silicone encapsulant 300 Lifting of the LED chip 200 due to the expansion deformation of the , and thus, a defect in which the electrical connection between the LED chip 200 and the lead terminals is broken does not occur.

2(c) shows that the silicone encapsulant 300, which was expanded as the temperature of the silicone encapsulant 300 is cooled to room temperature after the second SMT process, is restored to its original state.

FIG. 2D shows that the silicon encapsulant 300 is expanded and deformed in a direction away from the LED chip 200 by heat generated when the LED chip 200 emits light by applying a current to the light emitting device. In this expansion deformation, the gap 5 between the upper surface of the release layer 250 of the LED chip 200 and the silicone encapsulant 300 is expanded. Since the silicone encapsulant 300 and the release layer 250 are separated from each other, the LED chip 200 is lifted due to the expansion deformation of the silicone encapsulant 300, and thereby the LED chip 200 and the lead terminals are electrically connected to each other. There is no defect that disconnects the connection.

3 is a diagram for sequentially explaining a manufacturing method of the LED chip 200 applied to the above-described light emitting device.

First, as shown in (a) of FIG. 3 , a first conductivity type semiconductor layer 222 , an active layer 224 and a second conductivity type semiconductor layer 226 are sequentially included on one surface of a sapphire substrate 210 . A semiconductor laminate structure is formed. The semiconductor layers constituting the semiconductor stacked structure are preferably gallium nitride-based semiconductor layers.

Next, as shown in FIG. 3B , the mesa for removing the active layer 224 and the second conductivity type semiconductor layer 226 so as to connect the first electrode pad with the first conductivity type semiconductor layer 222 . Etching is performed. Since a plurality of LED chips are made from the sapphire substrate 210 and the semiconductor stacked structure grown thereon shown in FIGS. The active layer 224 and the second conductivity type semiconductor layer 226 are removed in the region of , thereby forming a plurality of exposed regions where the first conductivity type semiconductor layer 226 is exposed.

Next, as shown in FIG. 3C , a first electrode pad 201 is formed in each of the plurality of exposed regions exposing the first conductivity-type semiconductor layer 222 , and the first electrode A second electrode pad 202 corresponding to each pad 201 is formed on the second conductivity type semiconductor layer 226 . The first electrode pad 201 and the second electrode pad 202 are a first electrode pad 201 among the exposed regions of the second conductivity type semiconductor layer 226 and the first conductivity type semiconductor layer 222 . and the second electrode pad 202 may be formed by a metal deposition process performed after covering the remaining regions with a mask except for the region where the second electrode pad 202 is to be formed.

Next, as shown in FIG. 3(d), a release layer 250 made of a fluorine coating layer is coated with a CH-bonded fluororesin on the opposite side of the sapphire substrate 210 on which the semiconductor laminate structure is not formed, and then heated and baked at a predetermined temperature. ) to form As a fluororesin material for forming the fluorine coating layer, PTFE (Polytetrafluoroethylene), SF, PFA (Perfluoroalkoxy), ETFE (Ethylene + Tetrafluoroethylene), FEP (Fluorinated Ethylene Propylene Copolymer), or other fluorine-containing resin may be considered.

Next, as shown in FIG. 3E , a semiconductor stack including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer is formed on one surface of the sapphire substrate 210 and a release layer is formed on the opposite surface of the sapphire substrate 210 . A singulation process of dividing the stacked structure in which 250 is formed into a plurality of LED chips 200 each including one first electrode pad 201 and one second electrode pad 202 is performed.

Each of the LED chips 200 prepared in this way is mounted to be electrically connected to the first lead terminal and the second lead terminal in the cavity of the above-described package body, and then a silicon encapsulant is formed to cover the LED chip 200, so that FIG. 1 A light emitting device as shown in is manufactured.

4 is a view showing a package type light emitting device according to another embodiment of the present invention.

Referring to FIG. 4 , the package type light emitting device according to the present embodiment is mounted on a printed circuit board (PCB), for example, and includes a package body 100 , an LED chip 200 , and a silicon encapsulant 300 . includes

In this embodiment, the LED chip 200 is a flip-chip type LED chip mounted on the bottom surface of the cavity 121 of the package body 100, and is a first lead terminal of the package body 100 by an SMT process. A first electrode pad 201 and a second electrode pad 202 respectively bonded to 140 and second lead terminals 150 are provided on the lower surface.

The LED chip 200 includes a sapphire substrate 210 having an upper surface that is a light emitting surface and a lower surface on the opposite side, and a semiconductor stack 220 formed on the lower surface of the sapphire substrate 210 . The semiconductor stack 220 includes gallium nitride-based semiconductor layers grown on the lower surface of the sapphire substrate 210 , and includes at least a first conductivity type semiconductor layer 222 and the first conductivity type semiconductor layer ( It includes an active layer 224 formed under the 222 , and a second conductivity-type semiconductor layer 226 formed under the active layer 224 . Since the first conductivity type semiconductor layer 222 is covered by the structure including the active layer 224 and the second conductivity type semiconductor layer 226 , the first conductivity type semiconductor layer 222 and the first electrode pad For connection with 201 , the second conductivity type semiconductor layer 226 and a portion of the active layer 224 are partially removed, for example, by mesa etching, and through the removed portion, the first conductivity type semiconductor layer 222 . ) and the first electrode pad 201 are connected. In addition, the second electrode pad 202 is formed on the second conductivity type semiconductor layer 226 and is electrically connected to the second conductivity type semiconductor layer 226 .

In addition, the LED chip 200 includes a release layer 250 ′ formed on the upper surface of the sapphire substrate 210 so as to be separated without being bonded to the upper surface and the surface of the silicon encapsulant 300 . In addition, the release layer 250 ′ covers the upper surface of the sapphire substrate 210 and extends to a region covering the upper side of the sapphire substrate 210 . By the release layer 250 ′, the upper surface and the upper side of the LED chip 200 may be separated without being adhered to the silicone encapsulant 300 , which is a secondary SMT or LED chip 200 . When the silicone encapsulant 300 expands by lighting, the silicon encapsulant 300 further weakens the force of holding and lifting the LED chip 200 . The LED chip 200 forms a semiconductor stacked structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a sapphire substrate 210 and then undergoes a singulation process of dividing the semiconductor layer into several LED chips. Thereafter, after forming a groove of a certain depth, more specifically, a V-shaped notch from the upper surface of the sapphire substrate 210 , the release layer 250 ′ is formed to extend to the inside of the groove, and then the groove Through a singulation process of transferring along a line passing through , the release layer 250 ′ extending from the upper surface of the sapphire substrate 210 to the side surface of the sapphire substrate 210 can be obtained.

As in the previous embodiment, the release layer 250 ′ is formed of a material that may not adhere well to the silicone encapsulant 300 due to low surface energy. In particular, the release layer 250' is coated with a fluororesin, which is a CH bond, in a groove formed on the upper surface of the sapphire substrate 210 and the upper surface of the sapphire substrate 210, and then heated and baked at a certain temperature. It may be a hard fluorine coating layer obtained. Polytetrafluoroethylene (PTFE), SF, Perfluoroalkoxy (PFA), ETFE (Ethylene + Tetrafluoroethylene), FEP (Fluorinated Ethylene Propylene Copolymer), or other fluorine-containing resins are considered as a fluororesin material forming the fluorine coating layer 250 ′. can be

The release layer 250 ′, more specifically, the upper surface and the upper side of the LED chip 200 may be separated from each other without being adhered to the silicone encapsulant 300 by the fluorine coating layer. Due to this separation, a fine gap is formed between the silicone encapsulant 300 and the release layer 250 ′. Therefore, even if the silicon encapsulant 300 is expanded by heat generated during a secondary SMT process for mounting the LED package on a substrate such as a PCB or heat generated during a light emitting operation of the LED chip 200 while using the LED package, the LED chip 200 may not be lifted by the silicone encapsulant 300, which is the first solder 20 between the first electrode pad 201) and the first lead terminal 140 due to the lifting of the LED chip 200 ) and/or the second solder 30 between the second electrode pad 202 and the second lead terminal 150 fundamentally blocks the occurrence of non-lighting due to breakage.

5 and 6 are cross-sectional views for explaining chip-on-board type light emitting devices according to other embodiments of the present invention.

5 and 6, the chip-on-board type light emitting device includes a mount substrate 2, a plurality of flip-chip type LED chips 200 mounted on the mount substrate 2, and the plurality of flip-chip type LED chips ( 200) includes a silicone encapsulant 300 formed on the mount substrate 2 to cover each of the individually.

The mount substrate 2 may be a printed circuit board (PCB), and includes a plurality of electrode pairs including a first electrode 2a and a second electrode 2b on an upper surface. The silicon encapsulant 300 is formed on the mount substrate 2 by transfer molding or dotting. The silicone encapsulant 200 may include a phosphor for wavelength-converting light from the LED chip 200 .

In addition, the flip-chip type LED chip 200 is directly mounted on the mount substrate 2 without a package structure, and includes a sapphire substrate 210 having an upper surface and a lower surface, and a lower surface of the sapphire substrate 210 . The semiconductor stack 220 is formed and includes a first conductivity type semiconductor layer 222 , an active layer 224 , and a second conductivity type semiconductor layer 226 , and is connected to the first conductivity type semiconductor layer 222 . The semiconductor stacking part ( and a second electrode pad 202 formed on the lower surface of the 220 and bonded to the second electrode 2b. In addition, the flip-chip type LED chip 200 includes a release layer 250 formed on the upper surface of the sapphire substrate 210 to separate the sapphire substrate 210 and the silicon encapsulant 300 . Existing chip-on-board type light emitting device has a problem in that the LED is peeled off when the silicone encapsulant is peeled off because the silicon encapsulant is cracked due to a large amount of heat generated. Since it is separated from the silicone encapsulant 300 without being adhered by the release layer 250 , it is possible to prevent unwanted lifting of the LED chip 200 and failure to illuminate due to it.

100..............................Package body
120 ...............................Molding part
121..............................Cavity
200 ...............................LED chip
201 ...............................First electrode pad
202 ...............................Second electrode pad
210 ...............................Sapphire substrate
220 ...............................Semiconductor Lamination
250..............................Releasable layer
300 ...............................Silicone encapsulant

Claims (15)

a package body having a molding part including a cavity and first and second lead terminals extending from a bottom surface of the cavity to an outer surface of the cavity and formed on a lower surface of the molding part;
an LED chip mounted on a bottom surface of the cavity; and
and an encapsulant formed in the cavity to cover the LED chip,
The LED chip is
A sapphire substrate having an upper surface and a lower surface;
a semiconductor laminate formed on a lower surface of the sapphire substrate and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
a first electrode pad formed on a lower surface of the semiconductor stack and connected to the first conductivity-type semiconductor layer;
a second electrode pad formed on a lower surface of the semiconductor stack and connected to the second conductivity-type semiconductor layer;
and a release layer formed on the upper surface of the sapphire substrate. The light emitting device according to claim 1, wherein the release layer is a fluorine coating layer. The light emitting device according to claim 1, wherein the release layer is a fluorine coating layer formed by coating a fluororesin on the upper surface of the sapphire substrate and then heating and sintering at a predetermined temperature. The light emitting device according to claim 1, wherein the release layer is formed only on the upper surface of the sapphire substrate. The light emitting device according to claim 1, wherein the release layer is formed to cover an upper surface of the sapphire substrate and an upper side of the sapphire substrate, and the upper side of the sapphire substrate includes an inclined surface. The method according to claim 1, wherein the inner surface of the cavity includes an inclined surface, a lower end of the inclined surface has a height equal to or less than a lower end of the second conductivity-type semiconductor layer, and the inclined surface has a certain inclination from the lower end to the upper end. device. The light emitting device according to claim 1, wherein a gap is formed between the upper surface of the release layer and the encapsulant. The light emitting device according to claim 1, wherein the release layer is also formed on a side surface of the sapphire substrate. a mount substrate having a first electrode and a second electrode;
an LED chip mounted on the mount substrate; and
It includes an encapsulant formed on the mount substrate to cover the LED chip,
The LED chip is
A sapphire substrate having an upper surface and a lower surface;
a semiconductor laminate formed on a lower surface of the sapphire substrate and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
a first electrode pad formed on a lower surface of the semiconductor stack and connected to the first conductivity-type semiconductor layer;
a second electrode pad formed on a lower surface of the semiconductor stack and connected to the second conductivity-type semiconductor layer;
and a release layer formed on the upper surface of the sapphire substrate. The light emitting device according to claim 9, wherein the release layer is a fluorine coating layer. The light emitting device according to claim 9, wherein the release layer is a fluorine coating layer formed by coating a fluororesin on the upper surface of the sapphire substrate and then heating and sintering at a predetermined temperature. The light emitting device of claim 9, wherein a gap is formed between the upper surface of the release layer and the encapsulant. The light emitting device according to claim 9, wherein the release layer is also formed on a side surface of the sapphire substrate. a sapphire substrate including a first surface and a second surface opposite to the first surface;
a semiconductor laminate formed on a first surface of the sapphire substrate and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
a first electrode pad formed on a lower surface of the semiconductor stack and connected to the first conductivity-type semiconductor layer;
a second electrode pad formed on a lower surface of the semiconductor stack and connected to the second conductivity-type semiconductor layer; and
and a fluorine coating layer formed on the second surface of the sapphire substrate. The LED chip according to claim 14, wherein the release layer is also formed on a side surface of the sapphire substrate.

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