KR101675904B1 - Light emitting device package, light emitting device package module, backlight unit, lighting device and its manufacturing method - Google Patents

Light emitting device package, light emitting device package module, backlight unit, lighting device and its manufacturing method Download PDF

Info

Publication number
KR101675904B1
KR101675904B1 KR1020140092375A KR20140092375A KR101675904B1 KR 101675904 B1 KR101675904 B1 KR 101675904B1 KR 1020140092375 A KR1020140092375 A KR 1020140092375A KR 20140092375 A KR20140092375 A KR 20140092375A KR 101675904 B1 KR101675904 B1 KR 101675904B1
Authority
KR
South Korea
Prior art keywords
light emitting
emitting device
pad
emitting element
device package
Prior art date
Application number
KR1020140092375A
Other languages
Korean (ko)
Other versions
KR20160011723A (en
Inventor
조성식
오승현
Original Assignee
주식회사 루멘스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 루멘스 filed Critical 주식회사 루멘스
Priority to KR1020140092375A priority Critical patent/KR101675904B1/en
Publication of KR20160011723A publication Critical patent/KR20160011723A/en
Application granted granted Critical
Publication of KR101675904B1 publication Critical patent/KR101675904B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip

Abstract

The present invention relates to a light emitting device package, a light emitting device package module, a backlight unit, a lighting device, and a method of manufacturing a light emitting device package module, which can be used for display or illumination purposes. A wiring layer is provided so as to be electrically connected to the light emitting element, a receiving space is formed in the inside to accommodate the light emitting element, light generated from the light emitting element is guided in the lateral direction of the light emitting element, Wherein the light emitting device has a light emitting portion formed in a lateral direction of the light emitting device and surrounding at least a remaining portion except for the light emitting portion; And a light conversion material provided in at least a space between the light emitting device and the housing.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a light emitting device package module, a backlight unit, an illumination device,

The present invention relates to a light emitting device package, a light emitting device package module, a backlight unit, a lighting device, and a method of manufacturing the light emitting device package module. More particularly, A backlight unit, a lighting device, and a method of manufacturing a light emitting device package module.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to shock and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so that they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

On the other hand, in the conventional backlight unit, the edge-type light emitting device package module has a limitation in making the light emitting device slim.

In addition, there are many problems such as a light emitting phenomenon in which the light path is not precisely controlled due to the wide area of the light emitting surface of the light emitting element, thereby causing nonuniform light.

In addition, when a flexible type module substrate is used, the conventional light emitting device package module has a structure in which the light emitting device package module protrudes at a height based on the module substrate, and is easily damaged by an external force or an impact.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a light emitting device package module which can remarkably reduce a light emitting device package module using a side light emitting device package and a housing, Since the path of light emitted through the optical part can be precisely controlled, the light leakage phenomenon can be prevented, and the thin-shaped housing can be firmly adhered to the flexibly mounted module substrate, A light emitting device package module, a backlight unit, a lighting device, and a light emitting device package module that can greatly improve durability, shorten a production process and a production time to reduce a unit price of a product, And a method for producing the same. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a light emitting device package comprising: a light emitting element, which is a flip chip LED having a first pad and a second pad; A pair of double-sided DBRs attached to upper and lower surfaces of the light emitting device; A wiring layer is provided so as to be electrically connected to the first pad and the second pad of the light emitting element, a receiving space is formed therein to receive the light emitting element, and light generated from the light emitting element is transmitted to the light emitting element A housing having a light emitting portion formed in a lateral direction of the light emitting device so as to be guided out in a lateral direction and surrounding at least a remaining portion except for the light emitting portion; And a hollow phototransducing material provided at least in a space between the light emitting device and the housing and formed to surround the light emitting device and the side surfaces of the pair of double-sided DBRs.

According to an aspect of the present invention, the wiring layer may include a first electrode on one side of the electrode separation space, a second electrode on the other side of the electrode separation space, and a seating surface, And the housing includes a pair of flange portions protruding from both sides of the light emitting portion, the opening portion being formed at one side of the housing so that the light emitting element can be seated thereon, , A part of the wiring layer is extended to correspond to the pair of flange portions so as to be exposed to the outside and is located at a height corresponding to the light emitting element at the side of the light emitting element, It can be installed.

According to an aspect of the present invention, the light emitting device is a flip chip type LED having a first pad and a second pad, and at least a reflective layer, a reflective sheet, and a DBR (Distributed Bragg Reflector) ), And a combination thereof.

According to an aspect of the present invention, there is provided a light emitting device package module including: a module substrate; And at least one light emitting device package mounted on the module substrate, wherein the light emitting device package includes: a light emitting device as a flip chip type LED having a first pad and a second pad; A pair of double-sided DBRs attached to upper and lower surfaces of the light emitting device; A wiring layer is provided so as to be electrically connected to the first pad and the second pad of the light emitting device and a receiving space is formed therein to receive the light emitting device, A light emitting element having a light emitting portion formed in a lateral direction of the light emitting device so as to be guided in a lateral direction of the light emitting device and surrounding at least a remaining portion except for the light emitting portion; A hollow phototransducing material provided at least in a space between the light emitting device and the housing and formed to surround the light emitting device and the side surfaces of the pair of double-sided DBRs; And a bonding medium applied between the wiring layer and the module substrate.

According to an aspect of the present invention, the housing may be formed of a molding resin material having an opening formed at one side thereof so that the light emitting device can be seated thereon and molded into the wiring layer, and a pair of Wherein a portion of the wiring layer is extended to correspond to the pair of flange portions and is extended to be electrically connected to the module substrate so as to have a height corresponding to the light emitting element on the side of the light emitting element, And a first reflective layer may be provided on at least a part of the inner surface.

According to an aspect of the present invention, there is also provided a module substrate comprising: a rigid or soft module substrate core; A second reflective layer provided on the light emitting device facing surface of the module substrate core; And a module wiring layer provided on the module substrate core and electrically connected to the wiring layer.

delete

According to an aspect of the present invention, there is provided a backlight unit including: a module substrate; At least one light emitting device package mounted on the module substrate; And a light guide plate disposed in a lateral direction of the light emitting device package, wherein the light emitting device package includes: a light emitting device, which is a flip chip LED having a first pad and a second pad; A pair of double-sided DBRs attached to upper and lower surfaces of the light emitting device; A wiring layer is provided so as to be electrically connected to the first pad and the second pad of the light emitting element, a receiving space is formed therein to receive the light emitting element, and light generated from the light emitting element is transmitted to the light emitting element A housing made of an opaque material having a light emitting portion formed in a lateral direction of the light emitting device so as to be guided out in a lateral direction and surrounding at least a remaining portion except for the light emitting portion; A hollow phototransducing material provided at least in a space between the light emitting device and the housing and formed to surround the light emitting device and the side surfaces of the pair of double-sided DBRs; And a bonding medium installed between the wiring layer and the module substrate.

According to an aspect of the present invention, there is provided an illumination device including: a module substrate; And at least one light emitting device package mounted on the module substrate; Wherein the light emitting device package comprises: a light emitting element, which is a flip chip type LED having a first pad and a second pad; A pair of double-sided DBRs attached to upper and lower surfaces of the light emitting device; A wiring layer is provided so as to be electrically connected to the first pad and the second pad of the light emitting element, a receiving space is formed therein to receive the light emitting element, and light generated from the light emitting element is transmitted to the light emitting element A housing made of an opaque material having a light emitting portion formed in a lateral direction of the light emitting device so as to be guided out in a lateral direction and surrounding at least a remaining portion except for the light emitting portion; A hollow phototransducing material provided at least in a space between the light emitting device and the housing and formed to surround the light emitting device and the side surfaces of the pair of double-sided DBRs; And a bonding medium installed between the wiring layer and the module substrate; . ≪ / RTI >

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device package module, comprising: preparing a light emitting device package; Preparing a module substrate; And mounting the light emitting device package on the module substrate, wherein the step of preparing the light emitting device package is a flip chip type LED having a first pad and a second pad, Preparing a light emitting device having a pair of double-sided DBRs attached on top and bottom surfaces of the device; A wiring layer is provided so as to be electrically connected to the first pad and the second pad of the light emitting element, a receiving space is formed therein to receive the light emitting element, and light generated from the light emitting element is transmitted to the light emitting element Preparing a housing made of an opaque material by molding and molding a light emitting portion formed in a lateral direction of the light emitting device so as to be guided out in the lateral direction and surrounding at least a remaining portion except for the light emitting portion; Placing the light emitting device on the wiring layer; Providing a hollow photo-conversion material in at least some space between the light emitting device and the housing to surround the light emitting device and the side surfaces of the pair of double-sided DBRs; And applying a bonding medium between the wiring layer and the module substrate; . ≪ / RTI >

According to some embodiments of the present invention as described above, the light emitting device package module can be made as slim as possible, the optical path can be precisely controlled to prevent light leakage, and it is resistant to external force or shock, And the durability is greatly improved, the unit cost of the product is reduced, and the productivity is improved. Of course, the scope of the present invention is not limited by these effects.

1 is an exploded perspective view of a light emitting device package and a light emitting device package module according to some embodiments of the present invention.
2 is a cross-sectional view of a light emitting device package module of FIG. 1 taken along line II-II.
3 is a cross-sectional view of a light emitting device package module of FIG. 1 taken along line III-III.
4 to 6 are plan views showing various embodiments of the housing and the wiring layer of the light emitting device package of FIG.
FIGS. 7 to 12 are cross-sectional views illustrating steps of fabricating a light emitting device package module according to some embodiments of the present invention.
13 is a cross-sectional view illustrating a backlight unit according to some embodiments of the present invention.
14 is a flowchart illustrating a method of manufacturing a light emitting device package module according to some embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions illustrated herein, but should include, for example, changes in shape resulting from manufacturing.

1 is an exploded perspective view of a light emitting device package 100 and a light emitting device package module 2000 according to some embodiments of the present invention. 2 is a cross-sectional view illustrating a light emitting device package module 2000 of FIG. 1 taken along line II-II. FIG. 3 is a cross-sectional view of a light emitting device package module 2000 of FIG.

1 to 3, a light emitting device package 100 according to some embodiments of the present invention includes a light emitting device 10, a housing 20, and a light conversion material 30, . ≪ / RTI >

1 to 3, the light emitting device 10 includes a first pad P1 and a second pad P2. The first pad P1 and the second pad P2 may be bonded to the housing 20, And may be a flip chip LED (Light Emitting Diode) electrically connected by using the medium B.

1 to 3, at least one of a reflective layer, a reflective sheet, a DBR (Distributed Bragg Reflector) 11, and combinations thereof may be provided on the upper surface or the lower surface of the light emitting element 10 Can be installed.

In addition, although not shown, it may be in the form of a flip chip having a signal transmission medium such as a pump or a solder in addition to the pads P1 and P2. In addition, a bonding wire may be applied to the terminal, A light emitting element to which a bonding wire is applied to only a terminal, or a horizontal or vertical type light emitting element can be applied.

In addition, the first pad P1 and the second pad P2 may be deformed into various shapes other than the rectangular shape shown in FIG. 1, and may have a finger structure having a plurality of fingers on one arm, for example.

1 to 3, one or more light emitting devices 10 may be provided in the housing 20, and a plurality of light emitting devices 10 may be provided in the housing 20 It is possible.

In addition, although not shown, the light emitting device 10 may be a horizontal or vertical type light emitting device electrically connected to the housing 20 using a bonding wire.

 The light emitting device 10 may be made of a semiconductor, as shown in FIGS. For example, LEDs of blue, green, red, and yellow light emission, LEDs of ultraviolet light emission, and LEDs of infrared light emission, which are made of a nitride semiconductor, can be applied.

The light emitting device 10 may be formed by epitaxially growing nitride semiconductors such as InN, AlN, InGaN, AlGaN, and InGaAlN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD To grow. The light emitting element 10 may be formed using a semiconductor such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, or AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. Further, the light emitting element 10 can be selected to have an arbitrary wavelength depending on applications such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl 2 O 4 , MgO, LiAlO 2 , LiGaO 2 , GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

In addition, since the silicon (Si) substrate absorbs light generated from the GaN-based semiconductor and the external quantum efficiency of the light emitting device is lowered, the substrate may be removed as necessary, and Si, Ge, SiAl, A support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

The buffer layer may be made of GaN, AlN, AlGaN, InGaN, or InGaNAlN. If necessary, a material such as ZrB 2 , HfB 2 , ZrN, HfN, or TiN may be used. Further, a plurality of layers may be combined, or the composition may be gradually changed.

1 to 3, a housing space A is formed in the housing 20 so as to accommodate the light emitting device 10 therein, and a space A formed in the light emitting device 10 A light emitting portion 20b is formed in a lateral direction of the light emitting element 10 so that light can be guided in the lateral direction of the light emitting element 10 and the light emitting portion 10 is surrounded by at least the remaining portion except for the light emitting portion 20b A box-like structure made of an opaque material in the form of an upper side and an open side.

1 to 3, the housing 20 may be provided with a wiring layer 23 so as to be electrically connected to the light emitting device 10.

Here, the wiring layer 23 includes a first electrode 21 disposed on one side of the electrode separation space and a second electrode 22 disposed on the other side of the electrode separation space. A seating surface can be formed.

More specifically, for example, as shown in FIGS. 1 to 3, an opening 20a is formed at one side of the housing 20 so that the light emitting device 10 can be seated, and the wiring layer 23 A flange portion 24 is formed to expose a part of the wiring layer 23 to the outside and a first reflective layer R1 may be provided on at least a part of the inner surface of the flange portion 24 have. Here, the flange portions 24 may be provided as a pair of protruding portions extending from both sides of the light emitting portion. A part of the wiring layer 23 may be located at a height corresponding to the light emitting element 10 on the side of the light emitting element 10. [

For example, the housing 20 may be formed of at least an epoxy resin composition, a silicone resin composition, a modified epoxy resin composition, a modified silicone resin composition, a polyimide resin composition, a modified polyimide resin composition, Resin composition, EMC including polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, , White silicon included, photoimageable solder resist (PSR), and combinations thereof.

Examples of the resin include a light reflecting material such as titanium oxide, silicon dioxide, titanium dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, chromium, .

The housing 20 may have a structure in which the first reflective layer R1 formed by selecting at least one of a Bragg reflective layer, an air gap, a total reflection layer, a metal layer, Can be installed.

1 to 3, the photo-conversion material 30 is installed in at least a part of the space between the light emitting device 10 and the housing 20. Thereby, the photo-conversion material 30 can also be arranged to surround the side surface of the light emitting element 10 (and the double-sided DBR 11). To this end, the photo-conversion material 30 is formed in a hollow shape and can generally form a square loop. In addition, the photo-conversion material 30 may be a material capable of receiving the excitation light of the first wavelength and generating converted light of a wavelength different from the first wavelength.

More specifically, the photo-conversion material 30 may be formed by selecting at least one of a light-transmitting encapsulant containing at least a fluorescent material, a quantum dot, a fluorescent material or a quantum dot, and combinations thereof.

Here, the phosphor may have the following composition formula and color.

Oxide system: yellow and green Y 3 Al 5 O 12 : Ce, Tb 3 Al 5 O 12 : Ce, Lu 3 Al 5 O 12 : Ce

(Ba, Sr) 2 SiO 4 : Eu, yellow and orange (Ba, Sr) 3 SiO 5 : Ce

The nitride-based: the green β-SiAlON: Eu, yellow L 3 Si 6 O 11: Ce , orange-colored α-SiAlON: Eu, red CaAlSiN 3: Eu, Sr 2 Si 5 N 8: Eu, SrSiAl 4 N 7: Eu

The composition of the phosphor should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

The Quantum Dot (QD) has a structure of a core (3 to 10 nm) such as CdSe and InP, a shell (0.5 to 2 nm) such as ZnS and ZnSe, and a ligand for stabilizing the core and shell And various colors can be implemented according to the size.

In addition, the application method of the phosphor may be at least one of a method of being applied to an LED chip or a light emitting device, a method of covering the LED chip, a method of covering the LED chip, a method of attaching a sheet form such as a film or a ceramic phosphor.

Dispensing and spray coating are common methods of spraying, and dispensing includes mechanical methods such as pneumatic method and screw, linear type. It is also possible to control the amount of dyeing through a small amount of jetting by means of a jetting method and control the color coordinates thereof. The method of collectively applying the phosphor on the wafer level or the light emitting device substrate by the spray method can easily control productivity and thickness.

The method of directly covering the light emitting device or the LED chip in a film form can be applied by a method of electrophoresis, screen printing or phosphor molding, and the method can be different according to necessity of application of the side of the LED chip.

In order to control the efficiency of the long-wavelength light-emitting phosphor that reabsers light emitted from a short wavelength among two or more kinds of phosphors having different emission wavelengths, two or more kinds of phosphor layers having different emission wavelengths can be distinguished. A DBR (ODR) layer may be included between each layer to minimize absorption and interference.

In order to form a uniform coating film, the phosphor may be formed into a film or ceramic form and then attached onto the LED chip or the light emitting device.

In order to make a difference in light efficiency and light distribution characteristics, a photoelectric conversion material may be located in a remote format. In this case, the photoelectric conversion material is located together with a transparent polymer, glass, or the like depending on its durability and heat resistance.

Such a fluorescent material and a quantum dot coating technique play the greatest role in determining optical characteristics in a light emitting device, and therefore various control techniques such as thickness of a fluorescent material coating layer and uniform dispersion of a fluorescent material have been studied. The quantum dot (QD) can also be located in the LED chip or the light emitting element in the same manner as the phosphor, and can be positioned between the glass or the light-transmitting polymer material to perform light conversion.

1 to 3, a light emitting device package module 2000 according to some embodiments of the present invention includes a module substrate 40 and at least one light emitting device package 40 mounted on the module substrate 40, And the light emitting device package 100 may be included.

1 to 3, the module substrate 40 includes a rigid or soft module substrate core 41, and a plurality of light emitting elements 41, And a module wiring layer 42 provided on the module substrate core 41 and electrically connected to the wiring layer 23.

Here, as the module substrate core 41, a printed circuit board (PCB) in which an epoxy resin sheet is formed in multiple layers can be applied. The lead frame 20 may be a Flexible Printed Circuit Board (FPCB) made of a flexible material.

In addition, the module substrate core 41 may be a synthetic resin substrate such as resin or glass epoxy, or a ceramic substrate in consideration of thermal conductivity.

The module substrate core 41 may be formed of at least one of EMC (Epoxy Mold Compound), PI (polyimide), ceramic, graphene, glass synthetic fiber and combinations thereof at least partially May be selected.

The light emitting device package 100 may include a light emitting device 10, a housing 20, a photo-conversion material 30, and a bonding medium B. Referring to FIG.

1 to 3, the light emitting device 10, the housing 20, and the light conversion material 30 may be formed of the light emitting device 10 according to some embodiments of the present invention, The constitution and role of the package 100 may be the same as those of the package 100. Therefore, detailed description is omitted.

The bonding medium B is applied between the wiring layer 23 and the module substrate 40 to physically and electrically connect the wiring layer 23 and the module substrate 40 to each other. The medium (B) is applied between two parts due to relatively low melting temperature or curing temperature such as solder, solder paste, solder cream, solder, gold, silver, tin, zinc and various adhesives, And any type of bonding medium that electrically connects with each other can be applied.

2, the light generated from the light emitting element 10 is reflected by the double-sided DBR 11 provided on the top and bottom surfaces of the light emitting element 10, As shown in Fig.

The light emitted laterally of the light emitting element 10 is again reflected between the first reflective layer R1 and the second reflective layer R2 to be finally reflected by the outgoing portion of the housing 20 20b. ≪ / RTI >

At this time, the distance between the first reflection layer Rl and the second reflection layer R2 is relatively narrow. Therefore, the optical path can be precisely controlled by adjusting the reflection amount or the distance of the reflection layers R1 and R2 .

 Therefore, as described above with reference to FIGS. 1 to 3, the light emitting device package module 2000 can be remarkably slimmed by using the light emitting device package 100 of the lateral light emitting type in a lying state and the housing 20 covering the light emitting device package 100 .

For example, the thickness of the light emitting device package module 2000 according to some embodiments of the present invention can be minimized to the sum of the thickness of the module substrate 40 and the thickness of the light emitting device 10 and the housing 20 have.

Also, since the path of light emitted through the light emitting portion 20b can be precisely controlled by using the bidirectional reflection layers R1 and R2 and the double-sided DBR 11, light leakage phenomenon and the like can be prevented, The housing 20 of the housing 20 can be firmly adhered to the flexible type module board 40, so that it is resistant to external force or impact to prevent breakage of the components, greatly improves the durability, and shortens the production process and the production time It can reduce the unit price of the product and maximize the productivity.

4 to 6 are plan views showing various embodiments of the housing 20 and the wiring layer 23 of the light emitting device package 100 of FIG.

4 to 6, the wiring layer 23 provided in the housing 20 of the light emitting device package 100 according to some embodiments of the present invention is not limited to the drawings, And may be installed in the housing 20.

4, the wiring layer 23 may be connected to the pads P1 and P2 of the light emitting device 10 in the left and right directions, respectively. In addition, as shown in FIG. 5, Likewise, they may extend in the vertical direction and may be connected in various ways, such as extending in the left upward direction and the rightward downward direction, as shown in FIG. Also, the housing 20 is not necessarily limited to the drawings, but may be installed in a very wide variety of boxes, such as a polygon, a circle, and an ellipse.

FIGS. 7 to 12 are cross-sectional views illustrating steps of manufacturing the light emitting device package module 2000 according to some embodiments of the present invention.

7 to 12, the manufacturing process of the light emitting device package module 2000 according to some embodiments of the present invention will be described step by step. First, as shown in FIG. 7, A wiring layer 23 is provided so as to be electrically connected to the light emitting element 10 in order to prepare the package 100 and the light emitting element 10 can be accommodated therein so as to surround the wiring layer 23 A light emitting element 10 is formed in a receiving space A so that light emitted from the light emitting element 10 can be guided in a lateral direction of the light emitting element 10, 20b are formed, and a housing 20 made of an opaque material, which surrounds at least the remaining part except for the light emitting part 20b, can be molded by molding.

Then, as shown in FIG. 8, the light emitting device 10 can be seated on the seating surface of the wiring layer 23. At this time, a bonding medium B may be provided between the wiring layer 23 and the light emitting device 10, and then a reflow process or the like may be performed.

9, the photo-conversion material 30 may be applied or dispensed by using a printer, a syringe, a dispenser, or the like in at least a part of the space between the light emitting element 10 and the housing 20 .

10, a bonding medium B may be applied between the wiring layer 23 and the module substrate 40 using a bonding apparatus, a printer, a syringe, or a dispenser.

11, the module substrate 40 is prepared, and the light emitting device package 100 to which the bonding medium B is applied is inverted to mount the light emitting device package 100 on the module substrate 40 100 can be seated. Thereafter, a reflow process or the like can be performed.

Therefore, the module substrate 40 and the light emitting device package 100, which are flexible by using the bonding medium B, are firmly attached to the light emitting device package 100 by reducing the unit cost of the product by reducing the production cost, Can be improved.

13 is a cross-sectional view illustrating a backlight unit 1000 according to some embodiments of the present invention.

13, a backlight unit 1000 according to some embodiments of the present invention includes a module substrate 40, at least one light emitting device package 100 that is seated on the module substrate 40, And a light guide plate 110 installed in a lateral direction of the light emitting device package 100. The light emitting device package 100 includes a light emitting device 10 and a wiring layer 110 electrically connected to the light emitting device 10, The light emitting device 10 is provided with a receiving space A therein so that the light emitting device 10 can be received therein and the light emitted from the light emitting device 10 is emitted toward the light emitting device 10 in the lateral direction A housing 20 made of an opaque material having a light emitting portion 20b formed in a lateral direction of the light emitting device 10 so as to be guided out and to surround at least a remaining portion except for the light emitting portion 20b, , At least some space between the light emitting element (10) and the housing (20) It may include a bonding medium (B) provided between the photo-conversion value material 30 and the wiring layer 23 and the module substrate 40, which is.

Herein, the module substrate 40 and the light emitting device package 100 are the same as those of the light emitting device package module 2000 according to some embodiments of the present invention shown in FIGS. 1 to 13, And roles may be the same. Therefore, detailed description is omitted.

The light guide plate 110 may be an optical member that can be made of a light-transmitting material to guide light generated from the light emitting device 10.

The light guide plate 110 may be installed in a path of light generated by the light emitting device 10 to transmit light generated by the light emitting device 10 in a wider area.

The light guide plate 110 may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like , And various light transmitting resin materials may be applied. In addition, the light guide plate 110 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

Although not shown, various diffusion sheets, prism sheets, filters, and the like may be additionally provided above the light guide plate 110. In addition, various display panels such as an LCD panel may be installed above the light guide plate 110. [

Meanwhile, although not shown, the present invention may include a lighting device or a display device including the light emitting device package module 2000 described above. Here, the components of the illumination device or the display device according to some embodiments of the present invention may have the same configuration and function as those of the above-described light emitting device package module of the present invention. Therefore, detailed description is omitted.

14 is a flowchart illustrating a method of manufacturing a light emitting device package module 2000 according to some embodiments of the present invention.

1 to 14, a method of manufacturing a light emitting device package module 2000 according to some embodiments of the present invention includes a step S1 of preparing a light emitting device package 100, (S2) of mounting the light emitting device package (100) on the module substrate (40) and mounting the light emitting device package (100) on the module substrate (40) A wiring layer 23 is provided so as to be electrically connected to the light emitting element 10 and a receiving space A is formed therein to accommodate the light emitting element 10, A light emitting portion 20b is formed in the lateral direction of the light emitting element 10 so that the light emitted from the light emitting element 10 can be guided in the lateral direction of the light emitting element 10, Molding the housing 20 made of an opaque material in the form of a surrounding (S1 (S1-2) placing a light-emitting element (10) on the wiring layer (23) and a step (S1-2) of placing the light-converting element And a step S1-4 of applying a bonding medium B between the wiring layer 23 and the module substrate 40 in the step S1-3.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: Light emitting element
P1: first pad
P2: second pad
11: DBR
20: Housing
21: first electrode
22: second electrode
23: wiring layer
24: flange portion
A: accommodation space
20a: opening
20b:
30: Photoconductive material
R1: first reflective layer
R2: second reflective layer
40: module substrate
B: bonding medium
41: Module substrate core
42: module wiring layer
110: light guide plate
100: Light emitting device package
1000: Backlight unit
2000: Light emitting device package module

Claims (9)

A light emitting element which is an LED in the form of a flip chip having a first pad and a second pad;
A pair of double-sided DBRs attached to upper and lower surfaces of the light emitting device;
A wiring layer is provided so as to be electrically connected to the first pad and the second pad of the light emitting element, a receiving space is formed therein to receive the light emitting element, and light generated from the light emitting element is transmitted to the light emitting element A housing having a light emitting portion formed in a lateral direction of the light emitting device so as to be guided out in a lateral direction and surrounding at least a remaining portion except for the light emitting portion; And
And a hollow phototransformation material provided at least in a space between the light emitting device and the housing, the hollow phototransformation material being formed to surround side surfaces of the light emitting device and the pair of double-sided DBRs. The method according to claim 1,
The wiring layer may include a first electrode on one side of the electrode separation space, a second electrode on the other side of the electrode separation space, a seating surface for seating the light emitting device,
The housing includes a pair of flange portions protruding from both sides of the light emitting portion, the opening portion being formed at one side of the housing to allow the light emitting device to be seated, And a first reflective layer is provided on at least a portion of the inner surface of the first reflective layer, the second reflective layer being disposed at a height corresponding to the light emitting element at a side of the light emitting element, extending to correspond to the pair of flange portions, Emitting device package. delete Module substrate; And
And at least one light emitting device package mounted on the module substrate,
Wherein the light emitting device package includes:
A light emitting element which is an LED in the form of a flip chip having a first pad and a second pad;
A pair of double-sided DBRs attached to upper and lower surfaces of the light emitting device;
A wiring layer is provided so as to be electrically connected to the first pad and the second pad of the light emitting device and a receiving space is formed therein to receive the light emitting device, A light emitting element having a light emitting portion formed in a lateral direction of the light emitting device so as to be guided in a lateral direction of the light emitting device and surrounding at least a remaining portion except for the light emitting portion;
A hollow phototransducing material provided at least in a space between the light emitting device and the housing and formed to surround the light emitting device and the side surfaces of the pair of double-sided DBRs; And
And a bonding medium applied between the wiring layer and the module substrate. 5. The method of claim 4,
The housing includes a pair of flange portions protruding from both sides of the light emitting portion, the opening portion being formed at one side of the housing to allow the light emitting device to be seated, A portion of the light emitting device is extended to correspond to the pair of flange portions so as to be electrically connected to the module substrate and positioned at a height corresponding to the light emitting device at the side of the light emitting device, Wherein a first reflective layer is provided. The method according to claim 4 or 5,
Wherein the module substrate comprises:
A hard or soft module substrate core;
A second reflective layer provided on the light emitting device facing surface of the module substrate core; And
A module wiring layer provided on the module substrate core and electrically connected to the wiring layer;
Emitting device package module. Module substrate;
At least one light emitting device package mounted on the module substrate; And
And a light guide plate installed in a lateral direction of the light emitting device package,
Wherein the light emitting device package includes:
A light emitting element which is an LED in the form of a flip chip having a first pad and a second pad;
A pair of double-sided DBRs attached to upper and lower surfaces of the light emitting device;
A wiring layer is provided so as to be electrically connected to the first pad and the second pad of the light emitting element, a receiving space is formed therein to receive the light emitting element, and light generated from the light emitting element is transmitted to the light emitting element A housing made of an opaque material having a light emitting portion formed in a lateral direction of the light emitting device so as to be guided out in a lateral direction and surrounding at least a remaining portion except for the light emitting portion;
A hollow phototransducing material provided at least in a space between the light emitting device and the housing and formed to surround the light emitting device and the side surfaces of the pair of double-sided DBRs; And
And a bonding medium installed between the wiring layer and the module substrate. Module substrate; And
At least one light emitting device package mounted on the module substrate;
Lt; / RTI >
Wherein the light emitting device package includes:
A light emitting element which is an LED in the form of a flip chip having a first pad and a second pad;
A pair of double-sided DBRs attached to upper and lower surfaces of the light emitting device;
A wiring layer is provided so as to be electrically connected to the first pad and the second pad of the light emitting element, a receiving space is formed therein to receive the light emitting element, and light generated from the light emitting element is transmitted to the light emitting element A housing made of an opaque material having a light emitting portion formed in a lateral direction of the light emitting device so as to be guided out in a lateral direction and surrounding at least a remaining portion except for the light emitting portion;
A hollow phototransducing material provided at least in a space between the light emitting device and the housing and formed to surround the light emitting device and the side surfaces of the pair of double-sided DBRs; And
A bonding medium installed between the wiring layer and the module substrate; . Preparing a light emitting device package;
Preparing a module substrate; And
And placing the light emitting device package on the module substrate,
The step of preparing the light emitting device package includes:
Preparing a light emitting device having a first pad and a second pad in the form of a flip chip having a pair of double-sided DBRs on the top and bottom surfaces of the light emitting device;
A wiring layer is provided so as to be electrically connected to the first pad and the second pad of the light emitting element, a receiving space is formed therein to receive the light emitting element, and light generated from the light emitting element is transmitted to the light emitting element Preparing a housing made of an opaque material by molding and molding a light emitting portion formed in a lateral direction of the light emitting device so as to be guided out in the lateral direction and surrounding at least a remaining portion except for the light emitting portion;
Placing the light emitting device on the wiring layer;
Providing a hollow photo-conversion material in at least some space between the light emitting device and the housing to surround the light emitting device and the side surfaces of the pair of double-sided DBRs; And
Applying a bonding medium between the wiring layer and the module substrate;
Wherein the light emitting device package module comprises:
KR1020140092375A 2014-07-22 2014-07-22 Light emitting device package, light emitting device package module, backlight unit, lighting device and its manufacturing method KR101675904B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020140092375A KR101675904B1 (en) 2014-07-22 2014-07-22 Light emitting device package, light emitting device package module, backlight unit, lighting device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140092375A KR101675904B1 (en) 2014-07-22 2014-07-22 Light emitting device package, light emitting device package module, backlight unit, lighting device and its manufacturing method

Publications (2)

Publication Number Publication Date
KR20160011723A KR20160011723A (en) 2016-02-02
KR101675904B1 true KR101675904B1 (en) 2016-11-15

Family

ID=55354262

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140092375A KR101675904B1 (en) 2014-07-22 2014-07-22 Light emitting device package, light emitting device package module, backlight unit, lighting device and its manufacturing method

Country Status (1)

Country Link
KR (1) KR101675904B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11508876B2 (en) 2018-12-31 2022-11-22 Seoul Viosys Co., Ltd. Light emitting device package and display device having the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037293A (en) 2001-07-25 2003-02-07 Nichia Chem Ind Ltd Chip component type light-emitting element and manufacturing method therefor
US20080315228A1 (en) 2006-06-09 2008-12-25 Philips Lumileds Lighting Company, Llc Low profile side emitting led with window layer and phosphor layer
JP2013143430A (en) 2012-01-10 2013-07-22 Citizen Holdings Co Ltd Semiconductor light-emitting device, and illuminating device using the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110131429A (en) * 2010-05-31 2011-12-07 우리조명 주식회사 Light emitting device and method of manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003037293A (en) 2001-07-25 2003-02-07 Nichia Chem Ind Ltd Chip component type light-emitting element and manufacturing method therefor
US20080315228A1 (en) 2006-06-09 2008-12-25 Philips Lumileds Lighting Company, Llc Low profile side emitting led with window layer and phosphor layer
JP2013143430A (en) 2012-01-10 2013-07-22 Citizen Holdings Co Ltd Semiconductor light-emitting device, and illuminating device using the same

Also Published As

Publication number Publication date
KR20160011723A (en) 2016-02-02

Similar Documents

Publication Publication Date Title
KR101578760B1 (en) Light emitting device package, backlight unit, and illumination device
KR20150044307A (en) Side type light emitting device package, backlight unit and its manufacturing method
KR101504168B1 (en) Light emitting device package, backlight unit and lighting device
KR101607139B1 (en) Light emitting device package, backlight unit, illumination device and its manufacturing method
KR101557944B1 (en) Light emitting device package, backlight unit, lighting device, its manufacturing method and molding jig
KR20160080945A (en) Light emitting device package, light emitting device package assembly, light emitting device package module, backlight unit and lighting device
KR101590463B1 (en) Light emitting device package, backlight unit, lighting device and its manufacturing method
KR101575653B1 (en) Light emitting device package, backlight unit, lighting device and its manufacturing method
KR101504171B1 (en) Light emitting device package, backlight unit and lighting device
KR101690203B1 (en) Light emitting element package
KR101504160B1 (en) Light emitting device package, backlight unit, lighting device and its manufacturing method
KR101504306B1 (en) Light emitting device package, backlight unit, lighting device and its manufacturing method
KR101504993B1 (en) Light emitting device package, backlight unit and lighting device
KR101675904B1 (en) Light emitting device package, light emitting device package module, backlight unit, lighting device and its manufacturing method
KR101501017B1 (en) Light emitting device package and backlight unit having it
KR101623558B1 (en) Light emitting device package and its manufacturing method
KR20150141337A (en) Light emitting device package, backlight unit, lighting device and its manufacturing method
KR101623042B1 (en) Light emitting device package, backlight unit, lighting device and its manufacturing method
KR101544126B1 (en) Light emitting device package module, multi-backlight unit and display apparatus
KR101550778B1 (en) Light emitting device package, backlight unit and lighting device
KR20160003429A (en) Light emitting device package, light emitting device package module, backlight unit, lighting device and its manufacturing method
KR101713683B1 (en) Light emitting device package
KR101547548B1 (en) Phosphor encapsulation type light emitting device package, backlight unit, illumination device and its manufacturing method
KR20160061297A (en) Light emitting device package
KR101606819B1 (en) Light emitting device package, backlight unit and its manufacturing method

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20190909

Year of fee payment: 4