KR102471688B1 - Light emitting device package, lighting device and method of manufacturing the same - Google Patents

Abstract

A light emitting device package disclosed in an embodiment of the present invention includes forming an adhesive layer on a first region of a wavelength conversion layer made of glass having a phosphor; forming a body made of a reflective resin material on the second region of the wavelength conversion layer; and attaching a light emitting element on the adhesive layer; and dicing the body to the size of a package having at least one light emitting element. The light emitting element includes first and second bonding parts on an upper part, a light emitting structure under the first and second bonding parts, and a substrate bonded to the adhesive layer under the light emitting structure, and the body has upper and lower surfaces It has an opening through which the light emitting device is disposed, and a side surface of the wavelength conversion layer may be formed on the same vertical plane as a side surface of the body.

Description

Light emitting device package, light source device and light emitting device package manufacturing method {LIGHT EMITTING DEVICE PACKAGE, LIGHTING DEVICE AND METHOD OF MANUFACTURING THE SAME}

The embodiment relates to a light emitting device package, a method for manufacturing a light emitting device package, and a light source device.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in various ways such as light emitting devices, light receiving devices, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials are developed in thin film growth technology and device materials to produce red, green, It has the advantage of being able to implement light in various wavelength bands such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material can implement a white light source with high efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when light receiving devices such as photodetectors or solar cells are manufactured using Group 3-5 or Group 2-6 compound semiconductor materials, photocurrent is generated by absorbing light in various wavelength ranges through the development of device materials. By doing so, it is possible to use light in a wide range of wavelengths from gamma rays to radio wavelengths. In addition, such a light-receiving element has advantages of fast response speed, safety, environmental friendliness, and easy control of element materials, so that it can be easily used in power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace a transmission module of an optical communication means, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, and can replace a fluorescent lamp or an incandescent bulb. Applications are expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, applications of semiconductor devices can be expanded to high-frequency application circuits, other power control devices, and communication modules.

The light emitting device (Light Emitting Device) may be provided as, for example, a p-n junction diode having a characteristic of converting electrical energy into light energy using a group 3-5 element or a group 2-6 element on the periodic table, and a compound semiconductor Various wavelengths can be implemented by adjusting the composition ratio.

For example, nitride semiconductors are of great interest in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, red light emitting devices, and the like using nitride semiconductors are commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, as a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm, in the wavelength range, in the case of a short wavelength, it is used for sterilization and purification, and in the case of a long wavelength, an exposure machine or a curing machine, etc. can be used

Ultraviolet light can be divided into three types in order of wavelength: UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm), and UV-C (200nm ~ 280nm). UV-A (315nm ~ 400nm) area is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit money discrimination, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm ~ 315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as semiconductor devices capable of providing high output are requested, research on semiconductor devices capable of increasing output by applying high power is being conducted.

In addition, in a semiconductor device package, research is being conducted on a method capable of improving light extraction efficiency of the semiconductor device and improving light intensity at the package end. In addition, in a semiconductor device package, research into a method for improving a bonding force between a package electrode and a semiconductor device is being conducted.

A package having a light emitting diode is manufactured by dispersing a phosphor in an inorganic material such as silicon. However, in the case of a high-power package, there is a problem in that cracks occur in the organic phosphor layer due to high light energy.

When a flip chip is used as a light source for a chip scale package, improvement in color conversion efficiency of light emitted to the side and bottom of the flip chip is required.

An embodiment of the present invention provides a light emitting device package having an inorganic wavelength conversion layer with little deterioration and discoloration and a manufacturing method thereof.

An embodiment of the present invention provides a light emitting device package with improved light efficiency and a manufacturing method thereof.

An embodiment of the present invention provides a light emitting device package in which a light emitting device and a body are disposed around the light emitting device, and an inorganic wavelength conversion layer is disposed on the light emitting device and the body, and a manufacturing method thereof.

An embodiment of the present invention provides a light emitting device package in which a light emitting device and a body, the light emitting device and a wavelength conversion layer are bonded with an adhesive layer, and a manufacturing method thereof.

An embodiment of the present invention provides a light emitting device package capable of providing a uniform color distribution and a manufacturing method thereof.

A method of manufacturing a light emitting device package according to an embodiment of the present invention includes forming an adhesive layer on a first region of a wavelength conversion layer made of glass having a phosphor; forming a body made of a reflective resin material on the second region of the wavelength conversion layer; and attaching a light emitting element on the adhesive layer; and dicing the body into a package size having at least one light emitting device, wherein the light emitting device includes first and second bonding portions on top, a light emitting structure below the first and second bonding portions, and the light emitting device. A substrate is attached to the adhesive layer under the light emitting structure, the body has an opening through which upper and lower surfaces pass, the light emitting device is disposed in the opening, and the side surface of the wavelength conversion layer is the same as the side surface of the body. It can be formed on a vertical plane.

According to an embodiment, forming the body may include forming a resist layer on the wavelength conversion layer; etching a region corresponding to the first region in the resist layer; and forming a body on the first region, wherein the unetched resist layer is removed and the adhesive layer is formed.

According to an embodiment, in the forming of the body, the body having the opening may be formed or printed on the second region of the wavelength conversion layer.

According to an embodiment, the forming of the body includes attaching the light emitting element on the adhesive layer and then forming the body on the second region of the wavelength conversion layer, wherein the body includes the adhesive layer and the body. It is disposed on the side of the light emitting element, and the upper part of the body may extend to the upper surface of the light emitting element.

According to the embodiment, a plurality of openings are disposed on the wavelength conversion layer in a first direction, the light emitting element is disposed in each of the plurality of openings, and a side surface of the wavelength conversion layer is perpendicular to a side surface of the body. It can be placed on a flat surface.

A light emitting device package according to an embodiment includes a light emitting device including a light emitting structure and a substrate on first and second bonding parts, and on the first and second bonding parts; a body made of a reflective resin material around the light emitting element; a wavelength conversion layer on the light emitting element and the body; and an adhesive layer bonded between the wavelength conversion layer and the light emitting element and between the light emitting element and the body, wherein the light emitting element overlaps the first region of the wavelength conversion layer in a vertical direction, and the body comprises the It has an opening overlapping in a vertical direction with a second area disposed outside the first area of the wavelength conversion layer, the wavelength conversion layer is formed of a glass material having a phosphor, and the first and second bonding parts of the light emitting element are It can be exposed from the lower part of the body.

According to the embodiment, the adhesive layer is disposed between the body and the side surface of the substrate of the light emitting device, and may be exposed between the lower portion of the body and the lower surface of the light emitting device.

According to the embodiment, the adhesive layer is disposed between the body and the side surface of the substrate of the light emitting device, the lower portion of the body may extend to the lower surface of the light emitting device.

According to the light source device according to the embodiment, a plurality of frames; and at least one light emitting device package having first and second bonding parts disposed below the plurality of frames, wherein the plurality of frames have a conductive layer and face through holes facing the first and second bonding parts. can have

According to an embodiment of the invention, it is possible to reduce deterioration of the wavelength conversion layer.

According to an embodiment of the present invention, discoloration of the wavelength conversion layer can be reduced.

According to an embodiment of the invention, a package that can be applied to a high temperature and high humidity environment can be provided.

According to an embodiment of the invention, it can be provided in a high-power package.

According to an embodiment of the present invention, a manufacturing process of a light emitting device package can be simplified and process efficiency can be improved.

According to an embodiment of the present invention, it is possible to reduce the occurrence of cracks in the wavelength conversion layer, thereby improving the reliability of the package.

According to an embodiment of the invention, there is an advantage of improving light extraction efficiency, electrical characteristics, and reliability.

According to an embodiment of the present invention, there is an advantage of reducing manufacturing cost and improving manufacturing yield by improving process efficiency and presenting a new package structure.

According to an embodiment of the present invention, by providing a body having high reflectivity and an inorganic wavelength conversion layer, it is possible to prevent the reflective body from being discolored, thereby improving the reliability of the package.

According to an embodiment of the present invention, there is an advantage in preventing a re-melting phenomenon from occurring in a bonding area of a semiconductor device package in a process of re-bonding the package to a substrate or the like.

1 is a bottom view showing a light emitting device package according to a first embodiment of the present invention.
FIG. 2 is a plan view of the light emitting device package of FIG. 1 .
3 is an AA-side cross-sectional view of the light emitting device package of FIG. 1 .
FIG. 4 is a first modified example of the light emitting device package of FIG. 1 .
FIG. 5 is a second modified example of the light emitting device package of FIG. 1 .
6 is an example of a side cross-sectional view of the light emitting device package of FIG. 4 or 5 .
7 to 14 are diagrams illustrating a manufacturing process of a light emitting device package according to a first embodiment of the present invention.
15 is a bottom view of a light emitting device package according to a second embodiment of the present invention.
FIG. 16 is a plan view of the light emitting device package of FIG. 15 .
17 is a BB-side cross-sectional view of the light emitting device package of FIG. 15 .
18 to 21 are views illustrating a manufacturing process of a light emitting device package according to a second embodiment of the present invention.
FIG. 22 is a view showing an example in which the size of a unit unit is cut on the wafer of FIG. 21 .
23 is an example of the package cut by FIG. 22 .
FIG. 24 is an example of a light source device having the light emitting device package of FIG. 3 .
25 is another example of a light source device having the light emitting device package of FIG. 3 .
27 is an example of a lamp having a light emitting device package according to an embodiment of the present invention.
27 is a plan view illustrating an example of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.
FIG. 28 is a cross-sectional view of the light emitting device shown in FIG. 27 taken along line FF.

An embodiment of the invention will be described with reference to the accompanying drawings. In the description of an embodiment of the invention, each layer (film), region, pattern or structure is "on/over" or "under" the substrate, each layer (film), region, pad or pattern. )”, “on/over” and “under” mean “directly” or “indirectly” formed through another layer. All inclusive. In addition, the criterion for the top/top or bottom of each layer will be described based on the drawings, but the embodiment is not limited thereto.

A semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the present invention, the device package may include a semiconductor device or a light emitting device that emits light of ultraviolet, infrared, or visible light. Hereinafter, a description will be given based on the case where a light emitting element is applied as an example of a semiconductor device, and a package or light source device to which the light emitting element is applied may include a non-light emitting element such as a zener diode or a sensing element for monitoring wavelength or heat. can Hereinafter, a case in which a light emitting device is applied as an example of a semiconductor device will be described, and a light emitting device package will be described in detail.

<First Embodiment>

1 is a bottom view showing a light emitting device package according to a first embodiment of the present invention, FIG. 2 is a plan view of the light emitting device package of FIG. 1, FIG. 3 is a cross-sectional view of the light emitting device package of FIG. is a first modified example of the light emitting device package of FIG. 1 , FIG. 5 is a second modified example of the light emitting device package of FIG. 1 , and FIG. 6 is a side cross-sectional view of the light emitting device package of FIG. 4 or 5 .

1 to 6, the light emitting device package 100 includes a light emitting device 151, a body 120 around the light emitting device 151, and the body 120 and the light emitting device 151. It includes a wavelength conversion layer 110 on top. The light emitting device package 100 includes an adhesive layer 130 disposed in a region between the body 120 and the light emitting device 151 and in a region between the light emitting device 151 and the wavelength conversion layer 110. do.

The light emitting element 151 may emit blue light. As another example, the light emitting device 151 may emit green light or red light. As another example, the light emitting device 151 may emit ultraviolet light. The light emitting element 151 may selectively emit light in the range from ultraviolet to visible light.

The light emitting device 151 may be disposed within the body 120 . The light emitting device 151 may be disposed within the opening R1 of the body 120 . The opening R1 of the body 120 may be a hole through which upper and lower surfaces pass.

The light emitting element 151 may include a first bonding portion 51 and a second bonding portion 52 at a lower portion. The first and second bonding parts 51 and 52 may be spaced apart from each other in a first direction. The first bonding part 51 and the second bonding part 52 may be spaced apart from each other on the lower surface of the light emitting device 151 and exposed on the lower surface of the body 120 .

The light emitting device 151 may include a light emitting structure 50 . The light emitting structure 50 may be disposed on the first and second bonding parts 51 and 52 . The light emitting device 151 may include a substrate 55 on the light emitting structure 50 . The substrate 55 is a light-transmitting layer and may be formed of an insulating material or a semiconductor material. The substrate 55 may be selected from a group including, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, a concave-convex pattern may be formed on the surface of the substrate 55 . The substrate 55 may be removed, or a light-transmitting layer made of another resin material may be disposed. The substrate 55 may be disposed on the uppermost layer of the light emitting device 151 or function as a light extracting layer.

Here, when the light emitting device 151 is disposed as a flip chip, most of the light may be emitted through the top and side surfaces of the substrate 55 . Light traveling to the upper surface of the substrate 55 may travel to the wavelength conversion layer 110, and since light traveling to the side surface of the substrate 55 is lost when not reflected, it is reflected through the body 120 can give The flip chip light emitting device 151 may be disposed in an area adjacent to the body 120 to reflect light traveling to the side of the substrate 55 .

The light emitting structure 50 may be disposed below the substrate 55 . The light emitting structure 50 may be exposed on top of the light emitting device 151 when the substrate 55 is removed. According to an embodiment, the light emitting structure 50 may be provided as a compound semiconductor. The light emitting structure 50 may be provided as, for example, a Group 2-6 or Group 3-5 compound semiconductor. For example, the light emitting structure 50 includes at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). It can be.

The light emitting structure 50 may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The first and second conductivity-type semiconductor layers may be implemented with at least one of group 3-5 or group 2-6 compound semiconductors. The first and second conductive semiconductor layers are formed of, for example, a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It can be. For example, the first and second conductivity type semiconductor layers may include at least one selected from a group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. . The first conductivity-type semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductivity-type semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The first conductive semiconductor layer may be disposed between the substrate 55 and the active layer. The second conductive semiconductor layer may be disposed between the active layer and the first and second bonding parts 51 and 52 .

In the light emitting structure 50 , another semiconductor layer may be further disposed on an upper surface or/or a lower surface of at least one layer of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.

The first bonding part 51 may be electrically connected to the first conductivity type semiconductor layer. The second bonding part 52 may be electrically connected to the second conductivity type semiconductor layer. Conversely, the second bonding portion 52 may be electrically connected to the first conductivity type semiconductor layer. The first bonding part 51 may be electrically connected to the second conductivity type semiconductor layer.

The first bonding unit 51 may be disposed below the first area of the light emitting structure 53, and the second bonding unit 52 may be disposed below the second area of the light emitting structure 53. have. The first bonding part 51 and the second bonding part 52 may include a metal material. The first and second bonding parts 51 and 52 are Ti, Al, Sn, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO are formed using one or more materials or alloys selected from the group consisting of a single layer or multiple layers. It can be.

The first and second bonding parts 51 and 52 may be electrodes or pads. The first and second bonding parts 51 and 52 may be bonded on a circuit board or frame. The light emitting element 151 can be driven by driving power supplied through the first bonding part 51 and the second bonding part 52 . In addition, the light emitted from the light emitting element 151 can be provided to the wavelength conversion layer 110 .

The first bonding portion 51 may be disposed in an area of 20% or more of the area of the lower surface of the light emitting element 151 to improve heat dissipation efficiency and bonding force. The second bonding portion 52 may be disposed in an area of 20% or more of the area of the lower surface of the light emitting element 151 to improve heat dissipation efficiency and bonding force.

In the light emitting device 151 according to an embodiment of the present invention, a reflective layer may be disposed between the light emitting structure 50 and the first and second bonding parts 51 and 52 . The reflective layer may be formed of a metal or/and non-metal material. The reflective layer may reflect light generated from the light emitting structure 53 toward the substrate. The reflective layer may be formed in a single-layer or multi-layer structure.

The body 120 may be disposed around the light emitting element 151 . The body 120 may be disposed outside all sides of the light emitting device 151 . The body 120 has an opening R1 with open top and bottom surfaces, and the light emitting device 151 may be disposed in the opening R1. The height or depth of the opening R1 may be the same as the thickness c of the body 120 . The opening R1 has a lower surface area larger than that of the light emitting element 151 so that the light emitting element 151 can be inserted therein. A lower surface area of the opening R1 may be the same as an upper surface area.

The lower surface of the body 120 may be the same plane as the lower surface of the light emitting device 151 or a different plane. When the lower surface of the body 120 is on the same plane as the lower surface of the light emitting element 151, the lower part of the body 120 is in close contact with the circuit board to block leakage of the light emitting element 151 downward. have. When the lower surface of the body 120 protrudes from the lower surface of the light emitting element 151, a bonding layer disposed under the first and second bonding parts 51 and 52, for example, solder paste, Ag paste, SAC ( The bonding efficiency between the bonding parts 51 and 52 of the light emitting device 151 and the bonding layer can be improved by reducing the degree of compression of the Sn-Ag-Cu)-based material. When the lower surface of the body 120 protrudes, the lower surface of the light emitting device 151 may protrude less than 100 micrometers (㎛). When the lower surface of the body 120 is disposed lower than the bonding parts 51 and 52 of the light emitting element 151, interference caused by alignment of the bonding parts 51 and 52 of the light emitting element 151 can be reduced. have. Accordingly, the thickness c of the body 120 may be in the range of ±100 μm of the thickness of the light emitting element 151 . The thickness of the light emitting element 151 may be a straight line distance from the upper surface of the substrate 55 to the lower surface of the first and second bonding parts 51 and 52 . The lower surface of the body 120 may be disposed within a range of ±90 μm in the Z direction based on the lower surface of the light emitting element 151 .

The width (b) of the body 120 is the width in the first direction (X) or/and the second direction (Y), and may be the distance between the outside of the opening R1 and the outside of the body 120. have. The width (b) of the body 120 may be 50 micrometers or more, for example, in the range of 50 to 300 micrometers. When the width (b) of the body 120 is smaller than the above range, light may be transmitted and light loss may occur and rigidity may be reduced. When the width (b) of the body 120 is larger than the above range, the yield of packages on the wafer may decrease.

The body 120 may be made of an insulating material or a resin material. The body 120 may include at least one of silicon, epoxy, epoxy molding compound (EMC), and silicon molding compound (SMC). As another example, the body 120 may be polyphthalamide (PPA). The body 120 may be made of a material containing a metal oxide such as TiO ₂ , SiO ₂ , Al ₂ O ₃ and the like inside a resin material. The body 120 may be a white material or a black material. When the body 120 is made of a white material, it can reflect light and thus light reflection efficiency can be improved. When the body 120 is made of a black material, it can absorb light and thus improve the contrast. The black material may selectively include carbon black, titanium oxide, iron oxide, chromium, and silver particles.

A wavelength conversion layer 110 may be disposed on the body 120 and the light emitting element 151 . The wavelength conversion layer 110 may be formed of an inorganic material rather than an organic material. The wavelength conversion layer 110 may include, for example, a glass material. The wavelength conversion layer 110 may be a transparent glass material. The wavelength conversion layer 110 may be a transparent inorganic glass material. In a high-power package such as a vehicle lamp, a high current is applied and high light energy is emitted. When such high light energy is irradiated for a long time, the wavelength conversion layer 110 formed of an organic material such as silicon may crack or change color. Since the embodiment of the invention is manufactured by sintering an inorganic material such as glass powder, it can withstand higher light energy than organic materials.

Since the wavelength conversion layer 110 is made of glass, it is less deteriorated and discolored even when used at a high temperature and for a long time, and thus can be provided as a layer with high power and high efficiency. Since the wavelength conversion layer 110 is made of light-transmitting glass, light transmittance may not decrease compared to epoxy or silicon. The wavelength conversion layer 110 removes air bubbles, thereby preventing a decrease in light efficiency due to air bubbles and generating cracks. The wavelength conversion layer 110 can uniformly distribute phosphors on the light-transmissive glass material, so that wavelength conversion efficiency and color coordinate distribution can be improved.

The wavelength conversion layer 110 may contain impurities such as a diffusion agent or a phosphor therein. The wavelength conversion layer 110 may include at least one of a phosphor or a quantum dot, and the phosphor or quantum dot absorbs light emitted from the light emitting element 151 to excite it with a long wavelength and emit it. The wavelength conversion layer 110 may emit blue, yellow, green, and red light. The phosphor may include at least one or two types of a green phosphor, a red phosphor, a yellow phosphor, and a blue phosphor. The phosphor may include at least one of YAG-based, TAG-based, silicate-based, sulfide-based, and nitride-based. The wavelength conversion layer 110 may emit target light by mixing some light from the light emitting device 151 and some light wavelength-converted by the phosphor. The target light may be white light. The target light may be green, blue or red light.

The wavelength conversion layer 110 may have a horizontal lower surface and a horizontal upper surface. The upper and lower surfaces of the wavelength conversion layer 110 may be parallel. The wavelength conversion layer 110 includes a first area a1 overlapping the light emitting element 151 in a vertical direction and a second area a2 overlapping the body 120 in a vertical direction. The first area (a1) and the second area (a2) of the wavelength conversion layer 110 may have the same thickness (a). The second area a2 may be disposed around an outer circumference of the first area a1.

The thickness (a) of the wavelength conversion layer 110 may be less than 300 micrometers, for example, in the range of 3 to 300 micrometers. When the thickness (a) of the wavelength conversion layer 110 is greater than the above range, improvement in wavelength conversion efficiency may be insignificant, a dicing process may be difficult, and package thickness may increase or materials may be wasted. When the thickness (a) of the wavelength conversion layer 110 is smaller than the above range, wavelength conversion efficiency may decrease, handling may be difficult, and rigidity may decrease.

A lower surface area of the wavelength conversion layer 110 may be the same as an upper surface area. A lower surface area of the wavelength conversion layer 110 may be larger than an upper surface area of the light emitting element 151 . An upper surface area of the wavelength conversion layer 110 may be larger than lower and upper surface areas of the light emitting device 151 . A width of the wavelength conversion layer 110 in the first direction may be greater than a width of the light emitting element 151 in the first direction. A width of the wavelength conversion layer 110 in the second direction may be greater than a width of the light emitting element 151 in the second direction. Widths of the upper and lower surfaces of the wavelength conversion layer 110 may be greater than those of the upper and lower surfaces of the light emitting element 151 in the first and second directions. Since the wavelength conversion layer 110 is disposed in an area larger than the area of the light emitting element 151, light out of the area of the light emitting element 151 can also be wavelength-converted and emitted.

A light extraction structure may be formed on at least one or both of the upper and lower surfaces of the wavelength conversion layer 110 . The light extracting structure may have a structure in which concave and convex parts are alternately arranged, or rough protrusions may be arranged.

An adhesive layer 130 may be disposed between the wavelength conversion layer 110 and the light emitting element 151 . The adhesive layer 130 may be disposed between the light emitting element 151 and the body 120 . The first portion of the adhesive layer 130 is disposed below the first area of the wavelength conversion layer 110, and the second portion extends from the first portion to an area between the light emitting element 151 and the body 120. It can be.

The adhesive layer 130 may be a transparent resin material. The adhesive layer 130 may be made of a resin material such as silicone or epoxy. The adhesive layer 130 may be made of an organic material. The thickness (e) of the adhesive layer 130 may be less than 50 micrometers, for example, in the range of 2 to 50 micrometers. When the thickness (e) of the adhesive layer 130 is larger than the above range, the light loss rate may be more increased than the adhesive strength is improved, and when the thickness (e) of the adhesive layer 130 is smaller than the above range, the improvement of the adhesive strength may be deteriorated. The adhesive layer 130 is in contact with the top and side surfaces of the substrate 55 made of a light-transmitting material disposed above the light emitting element 151, and can reduce loss of light traveling in a lateral direction of the substrate 55. .

The adhesive layer 130 may adhere top and side surfaces of the light emitting device 151 to the wavelength conversion layer 110 and the body 120 . The lower end Ra of the adhesive layer 130 may be a concave curved surface in the direction of the wavelength conversion layer 110 or a convex curved surface in the opposite direction. The lower end Ra of the adhesive layer 130 may be disposed the same as or spaced apart from the lower surface of the body 120 .

The first area a1 of the wavelength conversion layer 110 may overlap the adhesive layer 130 in a vertical direction. The wavelength conversion layer 110 may convert the wavelength of light incident or reflected through the adhesive layer 130 .

The number of openings R1 of the body 120 may be the same as the number of light emitting elements 151 . The bottom view shape of the opening R1 may be the same as the outer shape of the bottom surface of the light emitting device 151 . A bottom area of the opening R1 may be larger than an area of a lower surface or an area of an upper surface of the light emitting device 151 . In an embodiment of the present invention, the body 120 is disposed under the second area a2 of the wavelength conversion layer 110, and the light emitting element 151 is bonded to the adhesive layer 130 under the first area a1. can do it Accordingly, it is possible to reflect light to the body 120 in the lateral direction of the light emitting element 151 and convert the wavelength of light with an area larger than the upper surface area of the light emitting element 151 in the up direction.

In an embodiment of the present invention, a body 120 having an opening R1 is disposed on the side of a flip chip type light emitting device 151, and a wavelength conversion layer made of glass is placed on the body 120 and the light emitting device 151. By arranging (110), it can be provided as a high-power and high-efficiency package with little deterioration and discoloration. According to an embodiment of the present invention, cracks in the wavelength conversion layer 110 of the light emitting device package 100 may be reduced, thereby improving the reliability of the package. According to an embodiment of the present invention, even when the light emitting device package 100 is used at high temperature and for a long time, deterioration of performance in a high power package can be prevented without deterioration or discoloration of the wavelength conversion layer 110 .

4 to 6 are modified examples of the light emitting device package of FIGS. 1 to 3 . In describing the modified example, redundant description of the same parts as the above configuration may be omitted and selectively applied.

Referring to FIGS. 4 and 6 , in the light emitting device package, a plurality of light emitting devices 151 and 153 may be disposed under the wavelength conversion layer 110 . The plurality of light emitting devices 151 and 153 may be arranged in a first direction. A body 120 may be disposed outside the plurality of light emitting devices 151 and 153 . The body 120 may be disposed outside the side surface of each light emitting element 151 to reflect the light emitted from the light emitting element 151 . The body 120 may include a plurality of openings R1 and R2 disposed in a first direction, and the light emitting device 151 may be disposed in each of the openings R1 and R2.

The adhesive layer 130 may be bonded between the body 120 and the light emitting elements 151 and 153 and between the wavelength conversion layer 110 and the light emitting elements 151 and 153 . The plurality of light emitting devices 151 and 153 arranged in the first direction may be two or more or three or more under the wavelength conversion layer 110 . The two or three or more light emitting elements 151 may emit the same color, or elements having the same peak wavelength or elements having different peak wavelengths may be disposed within the same color. Since at least one of these light emitting devices 151 and 153 has a different rank, use efficiency of the light emitting device 151 can be improved.

As shown in FIGS. 5 and 6 , in the light emitting device package, a plurality of light emitting devices 151 , 153 , 155 , and 157 may be disposed under the wavelength conversion layer 110 . The light emitting devices 151 , 153 , 155 , and 157 may be disposed in plurality in the first direction and the second direction. The light emitting devices 151 may be arranged in N rows and M columns, and N and M may be 2 or more. The wavelength conversion layer 110 is made of glass, and descriptions of FIGS. 1 to 3 will be referred to. The material of the body 120 and the material of the adhesive layer 130 will be described with reference to FIGS. 1 to 3 .

As shown in FIGS. 4 to 6 , the plurality of light emitting devices 151 and 153 may have first and second bonding parts 51 and 52 at the bottom, be connected to a circuit board, and may be driven in series or in parallel. The lower surface area of the wavelength conversion layer 110 may be provided with an area greater than the sum of the upper surface areas of the plurality of light emitting elements 151 and 153, and may be made of an inorganic material to prevent deterioration and discoloration of the wavelength conversion layer 110. can write

The light emitting device package according to the embodiment of the present invention reflects side light of the light emitting device 151 to increase conversion efficiency into target light and prevent light extraction efficiency from deteriorating.

7 to 14 are diagrams explaining a process of manufacturing a light emitting device package according to a first embodiment of the present invention. In the description of FIGS. 7 to 14 , the above configuration is selectively applied to the same parts as the above configuration. 7 to 14, (a) is a plan view, and (b) is a partial cross-sectional view of (a).

Referring to FIGS. 7 and 8 , a resist layer 112 is formed on a wafer made of the wavelength conversion layer 110 . Here, the wafer may be provided as a layer or film having a phosphor in a glass material. The wafer may have the same thickness as the thickness (a) of the wavelength conversion layer 110 of FIG. 2 . The resist layer 110 is formed on the entire upper surface of the wafer and may be formed of a photo resist (PR) material.

Referring to FIGS. 8 and 9 , when the resist layer 112 is formed, the resist layer 112 is etched using a mask pattern and then a pattern is provided. The pattern of the resist layer 112 may be separated into a first direction and a second direction. The etching process may use dry or/and wet etching. Each region of the pattern of the resist layer 112 may have the size of the opening R1 in FIG. 1 . A wavelength conversion layer 110, which is the wafer, may be exposed around the pattern of the resist layer 112 . The etched region may be a first region in which a light emitting element is disposed.

Referring to FIGS. 9 and 10 , a body 125 may be formed on the outside of the pattern of the resist layer 112, that is, on the second region. The body 125 may be made of the same material as the body 110 of FIG. 1 . The body 125 may be formed on the outside of the resist layer 112 and on the wafer. The body 125 may be formed by a printing or screen printing method. The body 125 may be provided by a dispensing method. The material of the body 125 is a resin material, and may be a white resin or a black resin material. The material of the body 125 may be a layer in which a metal oxide is added to a material such as silicon or epoxy, and may be the body.

Referring to FIGS. 10 and 11 , when the body 125 is formed, the pattern of the resist layer 112 is removed. A dry etching process or/and a wet etching process may be used to remove the pattern of the resist layer 112 . Accordingly, the body 125 has a plurality of openings R1 arranged in a matrix form, and the wavelength conversion layer 110, which is the wafer, may be exposed through the plurality of openings R1.

Referring to FIGS. 11 and 12 , an adhesive layer 135 may be formed in each opening R1 of the body 125 . The adhesive layer 135 may be applied to each opening through a dispensing process. The adhesive layer 135 may be a transparent resin material such as silicone or epoxy.

12 and 13, when the adhesive layer 135 is formed in each opening R1 of the body 125, a light emitting element 151 is disposed in each opening R1, and the light emitting element 151 ) may be attached to the adhesive layer 135. When the light emitting element 151 is bonded by pressing, the adhesive layer 135 extends to the side surface of the light emitting element 151 and extends to a region between the side surface of the light emitting element 151 and the body 125. It can be. Accordingly, an adhesive layer 135 may be disposed on the top and side surfaces of the light emitting device 151 . The light emitting element 151 may be disposed on the first region of the wavelength conversion layer 110 .

The light emitting element 151 has a structure in which the light emitting element 151 of FIG. 3 is turned over 180 degrees, and the first and second bonding parts 51 and 52 are disposed on the upper part and the light emitting structure and the substrate are disposed on the lower part. to be. The first and second bonding parts 51 and 52 of the light emitting element 151 have a structure exposed to the top, and may protrude more than the upper surface of the body 125 .

Referring to FIGS. 13 and 14 , the adhesive layer 135 attached to the light emitting device 151 is cured and then diced into a package unit having the light emitting device 151 . In this case, the dicing may be provided in an individual package size by cutting from the body 125 to the lower surface of the wavelength conversion layer 110, which is the wafer, along the cutting lines CL1 and CL2. Here, in the dicing process, the size of the package may be diced in units of a package having one light emitting device 151 or a package having two or more light emitting devices 151 . Accordingly, a package as shown in FIG. 1 , FIG. 3 or FIG. 5 may be provided.

In an embodiment of the invention, the body 125 is formed on a wafer made of the wavelength conversion layer 110, the openings R1 are arranged, the adhesive layer 135 is applied to the openings R1, and the light emitting element 151 is applied. ) may be attached to each opening R1 and diced to a package size. Accordingly, the body 125 made of a reflective resin material may be disposed in a lateral direction of the light emitting element 151, and the wavelength conversion layer 110 may be disposed in an upper direction of the light emitting element 151 and the body 125 or in a wafer direction. ) can be placed. Such a package may be provided as a package as shown in FIGS. 1 to 6 , and may be provided as a light source having a wavelength conversion layer 110 made of glass and less deteriorating and discoloring.

As another example of the manufacturing process of the light emitting device package, refer to FIGS. 7 and 11 to 14 .

Referring to FIGS. 7 and 11 , a body 125 having an opening R1 disposed thereon is formed on a wafer made of the wavelength conversion layer 110 . The body 125 may have an opening R1 and be formed on the wafer through injection molding. The wafer may be exposed through the opening R1.

The injection molding process of the body 125 may be formed by injecting a body material into an area of the wafer except for the opening R1, and the body material may be made of silicon, epoxy, silicone molding compound, or epoxy molding compound. can be The body 125 may be formed of a reflective resin material.

As shown in FIGS. 11 and 12 , an adhesive layer 135 may be formed in the opening R1 of the body 125 . The adhesive layer 135 is a transparent material such as silicon or epoxy, and may be formed in each opening R1 through a dispensing process.

12 and 13, when the adhesive layer 135 is formed in each opening R1 of the body 125, a light emitting element 151 is disposed in each opening R1, and the light emitting element 151 ) may be attached to the adhesive layer 135. When the light emitting element 151 is bonded by pressing, the adhesive layer 135 extends to the side surface of the light emitting element 151 and extends to a region between the side surface of the light emitting element 151 and the body 125. It can be. Accordingly, an adhesive layer 135 may be disposed on the top and side surfaces of the light emitting device 151 .

The light emitting element 151 has a structure in which the light emitting element 151 of FIG. 3 is turned over 180 degrees, and the first and second bonding parts 51 and 52 are disposed on the upper part and the light emitting structure and the substrate are disposed on the lower part. to be. The first and second bonding parts 51 and 52 of the light emitting element 151 have a structure exposed to the top, and may protrude more than the upper surface of the body 120 .

Referring to FIGS. 13 and 14 , the adhesive layer 135 attached to the light emitting device 151 is cured, and then diced in units of packages having the light emitting device 151 . In this case, the dicing may be provided in an individual package size by cutting from the body 125 to the lower surface of the wafer along the cutting lines CL1 and CL2. Here, in the dicing process, the size of the package may be diced in units of a package having one light emitting device 151 or a package having two or more light emitting devices 151 . Accordingly, packages such as those shown in FIGS. 3 and 5 may be provided.

In an embodiment of the present invention, the body 125 is printed on a wafer made of the wavelength conversion layer 110 using a photoresist layer or formed through injection molding to arrange the openings R1, and then the openings R1 An adhesive layer 135 may be applied to and the light emitting device 151 may be attached to each opening R1 and then diced into a predetermined package size. Accordingly, the body 125 made of a reflective resin material may be disposed in a lateral direction of the light emitting element 151, and the wavelength conversion layer 110 may be disposed in an upper direction of the light emitting element 151 and the body 125 or in a wafer direction. ) can be placed. Such a package may be provided as a package as shown in FIGS. 1 to 6 , and may be provided as a light source having a wavelength conversion layer 110 made of glass and less deteriorating and discoloring.

<Second Embodiment>

15 to 17 are views showing a light emitting device package according to a second embodiment of the present invention.

15 to 17, the light emitting device package 101 includes a light emitting device 151, a body 120 around the light emitting device 151, and the body 120 and the light emitting device 151. A wavelength conversion layer 110 is included thereon. The light emitting device package 101 includes an adhesive layer 130 disposed in an area between the body 120 and the light emitting device 151 and between the light emitting device 151 and the wavelength conversion layer 110. include

The light emitting element 151 may emit blue light. As another example, the light emitting device 151 may emit green light or red light. As another example, the light emitting device 151 may emit ultraviolet light. The light emitting element 151 may selectively emit light in the range from ultraviolet to visible light.

The light emitting device 151 may be disposed within the body 120 . The light emitting device 151 may be disposed in a structure embedded in the body 120 .

The light emitting element 151 may include a first bonding portion 51 and a second bonding portion 52 at a lower portion. The first and second bonding parts 51 and 52 may be spaced apart from each other in a first direction. The first bonding part 51 and the second bonding part 52 may be spaced apart from each other on the lower surface of the light emitting device 151 and exposed on the lower surface of the body 120 .

The light emitting device 151 may include a light emitting structure 50 . The light emitting structure 50 may be disposed on the first and second bonding parts 51 and 52 . The light emitting device 151 may include a substrate 55 on the light emitting structure 50 . The substrate 55 is a light-transmitting layer and may be formed of an insulating material or a semiconductor material. The substrate 55 may be selected from a group including, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, a concave-convex pattern may be formed on the surface of the substrate 55 . The substrate 55 may be removed, or a light-transmitting layer made of another resin material may be disposed. The substrate 55 may be disposed on the uppermost layer of the light emitting device 151 or function as a light extracting layer.

Here, when the light emitting device 151 is disposed as a flip chip, most of the light may be emitted through the top and side surfaces of the substrate 55 . The light traveling to the upper surface of the substrate 55 may travel to the wavelength conversion layer 110, and since the light traveling to the side of the substrate 55 is lost when not reflected, it is reflected through the body 120. can give The flip chip light emitting device 151 may be disposed in an area adjacent to the body 120 to reflect light traveling to the side of the substrate 55 .

The light emitting structure 50 may be disposed below the substrate 55 . The light emitting structure 50 may be exposed on top of the light emitting device 151 when the substrate 55 is removed. According to an embodiment, the light emitting structure 50 may be provided as a compound semiconductor. The light emitting structure 50 may be provided as, for example, a Group 2-6 or Group 3-5 compound semiconductor. For example, the light emitting structure 50 includes at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). It can be. The light emitting structure 55 will refer to the description of the first embodiment.

The first bonding part 51 may be electrically connected to the first conductivity type semiconductor layer. The second bonding part 52 may be electrically connected to the second conductivity type semiconductor layer. Conversely, the second bonding portion 52 may be electrically connected to the first conductivity type semiconductor layer. The first bonding part 51 may be electrically connected to the second conductivity type semiconductor layer.

The first bonding unit 51 may be disposed below the first area of the light emitting structure 53, and the second bonding unit 52 may be disposed below the second area of the light emitting structure 53. have. The first bonding part 51 and the second bonding part 52 may include a metal material. The first and second bonding parts 51 and 52 are Ti, Al, Sn, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO are formed using one or more materials or alloys selected from the group consisting of a single layer or multiple layers. It can be.

The first and second bonding parts 51 and 52 may be electrodes or pads. The first and second bonding parts 51 and 52 may be bonded on a circuit board or frame. The light emitting element 151 can be driven by driving power supplied through the first bonding part 51 and the second bonding part 52 . In addition, the light emitted from the light emitting element 151 can be provided to the wavelength conversion layer 110 .

The first bonding portion 51 may be disposed in an area of 20% or more of the area of the lower surface of the light emitting element 151 to improve heat dissipation efficiency and bonding force. The second bonding portion 52 may be disposed in an area of 20% or more of the area of the lower surface of the light emitting element 151 to improve heat dissipation efficiency and bonding force.

In the light emitting device 151 according to an embodiment of the present invention, a reflective layer may be disposed between the light emitting structure 50 and the first and second bonding parts 51 and 52 . The reflective layer may be formed of a metal or/and non-metal material. The reflective layer may reflect light generated from the light emitting structure 53 toward the substrate. The reflective layer may be formed in a single-layer or multi-layer structure.

The body 120 may be disposed around the light emitting element 151 . The body 120 may be disposed outside all sides of the light emitting device 151 . The body 120 has an opening in which upper and lower surfaces are open, and the light emitting device 151 may be disposed in the opening. An upper surface area of the opening may be larger than a lower surface area.

The lower surface of the body 120 may be the same plane as the lower surface of the light emitting device 151 or a different plane. When the lower surface of the body 120 is the same as the lower surface of the light emitting element 151, the lower part of the body 120 is in close contact with the circuit board to block leakage of the light emitting element 151 downward. When the lower surface of the body 120 protrudes from the lower surface of the light emitting element 151, a bonding member disposed under the first and second bonding parts 51 and 52, for example, solder paste, Ag paste, SAC ( The bonding efficiency between the bonding parts 51 and 52 of the light emitting device 151 and the bonding layer can be improved by reducing the degree of compression of the Sn-Ag-Cu)-based material. When the lower surface of the body 120 protrudes, the lower surface of the light emitting device 151 may protrude less than 100 micrometers. When the lower surface of the body 120 is disposed lower than the bonding parts 51 and 52 of the light emitting element 151, interference caused by alignment of the bonding parts 51 and 52 of the light emitting element 151 can be reduced. have. Accordingly, the thickness c of the body 120 may be in the range of ±100 μm of the thickness of the light emitting element 151 . The lower surface of the body 120 may be in the range of ±90 μm based on the lower surface of the light emitting device 151 .

The distance d1 between the light emitting element 151 and the side surface of the body 120 may be greater than or equal to 50 micrometers, for example, in the range of 50 to 300 micrometers. The distance d1 is the width of the body 120. If it is smaller than the above range, light transmission loss and rigidity degradation may occur, and if it is larger than the above range, improvement in reflection efficiency may be insignificant and package manufacturing yield may be reduced. .

The body 120 may be made of an insulating material or a resin material. The body 120 may include at least one of silicon, epoxy, epoxy molding compound (EMC), and silicon molding compound (SMC). As another example, the body 120 may be polyphthalamide (PPA). The body 120 may be made of a material containing a metal oxide such as TiO ₂ , SiO ₂ , Al ₂ O ₃ and the like inside a resin material. The body 120 may be a white material or a black material. When the body 120 is made of a white material, it can reflect light and thus light reflection efficiency can be improved. When the body 120 is made of a black material, it can absorb light and thus improve the contrast. The black material may selectively include carbon black, titanium oxide, iron oxide, chromium, and silver particles.

A wavelength conversion layer 110 may be disposed on the body 120 and the light emitting element 151 . The wavelength conversion layer 110 may be formed of an inorganic material rather than an organic material. The wavelength conversion layer 110 may include, for example, a glass material. The wavelength conversion layer 110 may be a transparent glass material. The wavelength conversion layer 110 may be a transparent inorganic glass material. In a high-power package such as a vehicle lamp, a high current is applied and high light energy is emitted. When such high light energy is irradiated for a long time, the wavelength conversion layer 110 formed of an organic material such as silicon may crack or change color. Since the embodiment of the invention is manufactured by sintering an inorganic material such as glass powder, it can withstand higher light energy than organic materials.

Since the wavelength conversion layer 110 is made of glass, it is less deteriorated and discolored even when used at a high temperature and for a long time, and thus can be provided as a layer with high power and high efficiency. Since the wavelength conversion layer 110 is made of light-transmitting glass, light transmittance may not decrease compared to epoxy or silicon. The wavelength conversion layer 110 removes air bubbles, thereby preventing a decrease in light efficiency due to gaps and generating cracks. The wavelength conversion layer 110 can uniformly distribute phosphors on the light-transmissive glass material, so that wavelength conversion efficiency and color coordinate distribution can be improved.

The wavelength conversion layer 110 may contain impurities such as a diffusion agent or a phosphor therein. The wavelength conversion layer 110 may include at least one of a phosphor or a quantum dot, and the phosphor or quantum dot absorbs light emitted from the light emitting element 151 to excite it with a long wavelength and emit it. The wavelength conversion layer 110 may emit blue, yellow, green, and red light. The phosphor may include at least one or two types of a green phosphor, a red phosphor, a yellow phosphor, and a blue phosphor. The phosphor may include at least one of YAG-based, TAG-based, silicate-based, sulfide-based, and nitride-based.

The wavelength conversion layer 110 may emit target light by mixing some light from the light emitting device 151 and some light wavelength-converted by the phosphor. The target light may be white light.

The wavelength conversion layer 110 may have a horizontal lower surface and a horizontal upper surface. The upper and lower surfaces of the wavelength conversion layer 110 may be parallel. The wavelength conversion layer 110 includes a first region overlapping the light emitting element 151 in a vertical direction and a second region overlapping the body 120 in a vertical direction, and the first region and the second region overlap each other in a vertical direction. The two regions may have the same thickness. The second area may be disposed on an outer circumference of the first area.

The thickness (a) of the wavelength conversion layer 110 may be less than 300 micrometers, for example, in the range of 3 to 300 micrometers. When the thickness (a) of the wavelength conversion layer 110 is greater than the above range, the improvement of wavelength conversion efficiency may be insignificant, the dicing process may be difficult, the package thickness may increase, or materials may be wasted. When the thickness (a) of the wavelength conversion layer 110 is smaller than the above range, wavelength conversion efficiency may decrease, handling may be difficult, and rigidity may decrease.

A lower surface area of the wavelength conversion layer 110 is larger than an upper surface area of the light emitting element 151 . An upper surface area of the wavelength conversion layer 110 may be larger than lower and upper surface areas of the light emitting device 151 . A width of the wavelength conversion layer 110 in the first direction may be greater than a width of the light emitting element 151 in the first direction. A width of the wavelength conversion layer 110 in the second direction may be greater than a width of the light emitting element 151 in the second direction. Widths of the upper and lower surfaces of the wavelength conversion layer 110 may be greater than those of the upper and lower surfaces of the light emitting element 151 in the first and second directions. Since the wavelength conversion layer 110 is disposed in an area larger than the area of the light emitting element 151, light out of the area of the light emitting element 151 can also be wavelength-converted and emitted.

A light extraction structure may be formed on at least one or both of the upper and lower surfaces of the wavelength conversion layer 110 . The light extracting structure may have a structure in which concave and convex parts are alternately arranged, or rough protrusions may be arranged.

An adhesive layer 130 may be disposed between the wavelength conversion layer 110 and the light emitting element 151 . The adhesive layer 130 may be disposed in a partial area between the light emitting device 151 and the body 120 . The first portion of the adhesive layer 130 is disposed below the first area of the wavelength conversion layer 110, and the second portion extends from the first portion to an area between the light emitting element 151 and the body 120. It can be.

An area of the upper surface of the adhesive layer 130 may be larger than that of the upper surface of the light emitting device 151 . A distance between the outer side surface Re2 of the adhesive layer 130 and the side surface of the light emitting device 151 may become narrower toward the lower surface of the light emitting device 151 . The outer side surface Re2 of the adhesive layer 130 may be disposed closer to the light emitting device 151 as the area corresponding to the side surface of the substrate 55 goes toward the lower surface of the light emitting device 151 . The lower end Re1 of the adhesive layer 130 may be disposed closer to the lower surface of the substrate than the lower end of the light emitting structure 50 . The lower end Re1 of the adhesive layer 130 may be spaced apart from the lower end of the light emitting element 151 . The lower end Re1 of the adhesive layer 130 may or may not contact the light emitting structure 50 .

The outer side surface Re2 of the adhesive layer 130 may be an inclined surface, a curved surface, or an angled surface. An inclined angle of the outer side surface Re2 of the adhesive layer 130 may be 45 degrees or less, for example, 30 degrees or less, based on each side surface of the substrate 55 . In the outer side surface Re2 of the adhesive layer 130, a straight line connecting the upper and lower ends is provided at an inclined angle with respect to the side surface of the substrate 55 of the light emitting element 151, so that the side through the substrate 55 is provided. Light emitted in a direction may be reflected to the wavelength conversion layer 110 .

The adhesive layer 130 may be a transparent resin material. The adhesive layer 130 may be a resin material such as silicone or epoxy. The adhesive layer 130 may be made of an organic material. A thickness (e) of the adhesive layer 130 disposed between the light emitting element 151 and the wavelength conversion layer 11 may be 50 micrometers or less, for example, in the range of 2 to 50 micrometers. When the thickness (e) of the adhesive layer 130 is larger than the above range, the light loss rate may be more increased than the adhesive strength is improved, and when the thickness (e) of the adhesive layer 130 is smaller than the above range, the improvement of the adhesive strength may be deteriorated. The adhesive layer 130 may contact the top and side surfaces of the light-transmitting substrate 55 disposed above the light emitting device 151 to reduce light loss. The adhesive layer 130 may adhere top and side surfaces of the light emitting device 151 to the wavelength conversion layer 110 and the body 120 . The lower end of the adhesive layer 130 may be spaced apart from the lower surface of the body 120 without being exposed to the lower surface of the body 120 .

The lower end Re1 of the adhesive layer 130 may be disposed the same as the lower surface of the body 120 or may be spaced apart from the lower surface of the body 120 . The first area a1 of the wavelength conversion layer 110 may overlap the adhesive layer 130 in a vertical direction. The wavelength conversion layer 110 may convert the wavelength of light incident or reflected through the adhesive layer 130 . The second area a2 of the wavelength conversion layer 110 may overlap the body 120 in a vertical direction.

An upper outer surface of the adhesive layer 120 may be formed with a width d of a predetermined distance from the side surface of the light emitting device 151 . The width (d) may be less than 200 micrometers, for example, in the range of 1 to 200 micrometers. When the width (d) is larger than the range, the width between the region between the body 110 and the wavelength conversion layer 120 is reduced, and light may leak.

The number of openings of the body 120 may be the same as the number of light emitting devices 151 . The body 120 may face a side surface of the light emitting device 151 . A part of the body 120 may be in contact with a side surface of the light emitting device 151 . A portion of the body 120 may contact a side surface of the light emitting structure 50 or may be disposed to face in a first direction. The lower part of the body 120 may face or come into contact with the lower surface of the light emitting element 151 in the third direction. The lower part of the body 120 may come into contact with the first and second bonding parts 51 and 52 or face each other in the first direction. Since the lower part of the body 120 is disposed below the light emitting element 151, it surrounds the circumferences of the first and second bonding parts 51 and 52 and the outside of the first and second bonding parts 51 and 52. can reflect the leaked light. A lower portion of the body 120 may be disposed in a separation area between the first and second bonding parts 51 and 52 .

The lower surface of the body 120 may be disposed on the same plane as the lower surfaces of the first and second bonding parts 51 and 52 . A side surface of the body 120 may be disposed on the same vertical plane as a side surface of the wavelength conversion layer 110 .

In an embodiment of the present invention, the body 120 is disposed under the second area a2 of the wavelength conversion layer 110, and the light emitting element 151 is bonded to the adhesive layer 130 under the first area a1. can do it Accordingly, light can be reflected to the body 120 in the side direction of the light emitting element 151 and the wavelength of light can be converted with an area larger than the upper surface area of the light emitting element 151 in the up direction.

In an embodiment of the present invention, the body 120 is disposed on the side of the flip chip type light emitting element 151, and the wavelength conversion layer 110 made of glass is disposed on the body 120 and the light emitting element 151. , it can be provided in a high-power and high-efficiency package with little deterioration and discoloration. Reliability of the package may be improved by reducing cracks in the wavelength conversion layer 110 in the package of the light emitting device 151 . Even if the light emitting device package according to the embodiment of the present invention is used at a high temperature and for a long time, degradation of the wavelength conversion layer 110 or discoloration may be prevented, and performance degradation in a high power package may be prevented.

Referring to FIGS. 18 to 21 , a process of manufacturing a light emitting device package according to the second embodiment will be described. 18 to 21, (a) is a plan view, and (b) is a partial cross-sectional view of (a).

Referring to FIGS. 18 and 19 , an adhesive layer 135 is formed on the wafer including the wavelength conversion layer 110 to correspond to the first region overlapping the light emitting device. The adhesive layer 135 may be dispensed at a position corresponding to the first region of each light emitting device.

Referring to FIGS. 19 and 20 , a light emitting element 151 is bonded to the adhesive layer 135 . As shown in FIG. 2 , the light emitting device 151 may have a configuration including first and second bonding parts 51 and 52 , a light emitting structure, and a substrate, and may be bonded in a 180 degree rotation structure shown in FIG. 2 . That is, the substrate of the light emitting device 151 may be bonded to the adhesive layer 135 .

20 and 21 , after the light emitting element 151 is bonded to the adhesive layer 135, the body 125 is formed between the outside of the light emitting element 151. The body 125 may be formed on the second region of the wavelength conversion layer 110 by a dispensing method that exposes the light emitting element 151, and the outer side of the adhesive layer 135 and the light emitting element 151 ), and surrounds the outer circumference of the light emitting element 151. The material of the body 125 may be the above body material. An upper portion of the body 125 may extend to an upper surface of the light emitting device 151 .

Referring to FIGS. 20 and 21 , when the body 125 disposed outside the light emitting element 151 is cured, it is diced into a unit package size along the cutting lines CL1 and CL2. Such diced packages may be provided as packages shown in FIGS. 15 to 17 .

As shown in FIGS. 22 and 23 , the structure manufactured as shown in FIG. 21 may be cut into a package having two or three or more light emitting devices 151 through the cutting line CL0.

In the second embodiment, an adhesive layer is pre-coated on a wafer made of a wavelength conversion layer, and then a light emitting element is adhered in a flip chip form, and then a body is formed through a printing method or a dispensing process, and can be cut in individual package units. have.

<Light source device>

24 is an example of a light source device, a light source package, or a light source module having the light emitting device package of FIG. 3 .

Referring to FIG. 24 , in the light source module according to the embodiment of the present invention, one or a plurality of light emitting device packages 100 may be disposed on a circuit board 201 .

The circuit board 201 may include a substrate member having pads 211 and 213 . The circuit board 201 includes a printed circuit board (PCB), for example, a resin-based printed circuit board (PCB), a metal core PCB, a flexible PCB, and a ceramic PCB, FR-4 substrate may be included. When the substrate 201 is disposed as a metal core PCB having a metal layer disposed on the bottom, heat dissipation efficiency of the light emitting element 151 may be improved. The circuit board 201 may include a flexible circuit board or a non-flexible circuit board.

A power supply circuit for controlling driving of the light emitting device 151 may be provided on the circuit board 201 . The first and second bonding portions 51 and 52 of the light emitting device package 100 and the respective pads 211 and 213 of the circuit board 201 may be connected through bonding layers 221 and 223 . Accordingly, the light emitting device 151 of the light emitting device package 100 may receive power from the respective pads 211 and 213 of the circuit board 201 . Each of the pads 221 and 223 of the circuit board 201 is, for example, at least one selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, and Al. of or alloys thereof. The bonding layer may be a solder paste material, an Ag paste material, or a paste material in which metals such as Sn, Ag, and Cu are mixed.

FIG. 25 is another example of a light source package, light source device or light source module having the light emitting device package of FIG. 3 .

25, in the light source package according to the embodiment of the present invention, the first and second bonding parts 51 and 52 of the light emitting device 151 are exposed at the bottom of the light emitting device package 100, and the light emitting device 151 ) A plurality of frames 210 and 22 are disposed under the. A support body 250 may be disposed between the plurality of frames.

The plurality of frames 210 and 220 include a first frame 210 facing the first bonding part 51 under the light emitting element 151 and a second bonding part 52 under the light emitting element 151. ) and a second frame 220 facing each other. The support body 250 may be disposed under the light emitting element 151 to face the light emitting element 151 .

The plurality of frames 210 and 220 may be conductive frames. The plurality of frames 210 and 220 may be metal, for example, conductive frames, and include copper (Cu), titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum ( It may be selected from Pt), tin (Sn), and silver (Ag), and may be formed as a single layer or multiple layers. As another example, the plurality of frames 210 and 220 may be insulating frames. The insulating frame may be a resin material or an insulating material, for example, polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, epoxy molding compound ( It may be formed of at least one selected from a group including epoxy molding compound (EMC), silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al 2 O 3 ), and the like.

At least one or all of the plurality of frames 120 and 130 may include through holes TH1 and TH2. The through holes TH1 and TH2 may include a first through hole TH1 disposed in the first frame 120 and a second through hole TH2 disposed in the second frame 130 . The first and second through holes TH1 and TH2 may be spaced apart from each other in a first direction. The first and second through holes TH1 and TH2 may be holes penetrating from the upper surface to the lower surface of the first and second frames 120 and 130 . The depths of the first and second through holes TH1 and TH2 may be the same as the thicknesses of the first and second frames 120 and 130 .

The first and second through holes TH1 and TH2 may have circular, polygonal, or elliptical top-view shapes, or may have curved and straight lines. Side end surfaces of the first and second through holes TH1 and TH2 may have the same upper and lower widths, or the lower width may be wider than the upper width. Side end faces of the first and second through holes TH1 and TH2 may have a gradually widening width toward the bottom. The first and second through holes TH1 and TH2 may have upper widths wider than lower widths, and side surfaces having curvature or curved surfaces having different curvatures may be disposed with inflection points.

The first and second through holes TH1 and TH2 may have a width in the X direction equal to or less than a length in the Y direction. Since the length of the side surface of the light emitting element 151 is equal to or smaller than the length in the Y direction, the first and second through holes TH1 and TH2 have a size of the light emitting element 151. As a reference, the sizes of the through holes TH1 and TH2 may be increased in the expandable Y direction. The distance between the through holes TH1 and TH2 may vary according to the size of the light emitting element 151 . Since the upper regions of the first and second through holes TH1 and TH2 have the same width as or narrower than the lower regions, a decrease in rigidity of the frames 210 and 220 can be prevented and an electrical path can be provided.

Here, one or a plurality of first through holes TH1 may be provided in the first frame 210 . The first through hole TH1 may be provided through the first frame 210 . The first through hole TH1 may be provided to pass through the upper and lower surfaces of the first frame 210 in the Z direction.

The first through hole TH1 may overlap the light emitting element 151 in a vertical direction. The first through hole TH1 may be disposed under the first bonding portion 51 of the light emitting element 151 . The first through hole TH1 may overlap the first bonding portion 51 of the light emitting device 151 in the Z direction. The first through hole TH1 may overlap the first bonding portion 51 of the light emitting element 151 in the Z direction from the upper surface to the lower surface of the first frame 120 . By exposing the first bonding portion 51 through the first through hole TH1, an electrical path and a heat dissipation path may be provided through the conductive material filling the first through hole TH1.

One or more second through holes TH2 may be provided in the second frame 220 . The second through hole TH2 may be provided through the second frame 220 . The second through hole TH2 may be provided to pass through the upper and lower surfaces of the second frame 220 in the Z direction.

The second through hole TH2 may be disposed below the second bonding portion 52 of the light emitting element 151 . The second through hole TH2 may overlap the light emitting element 151 in a vertical direction. The second through hole TH2 may overlap with the second bonding portion 52 of the light emitting element 151 in a vertical direction. The second through hole TH2 may overlap the second bonding portion 52 of the light emitting element 151 in a direction from the upper surface to the lower surface of the second frame 220 . By exposing the second bonding portion 52 through the second through hole TH2, an electrical path and a heat dissipation path may be provided through the conductive material filling the second through hole TH2.

An upper area of each of the through holes TH1 and TH2 may be 30% or more of a lower surface area of each of the bonding parts 51 and 52, for example, in a range of 30% to 100%. Also, each of the through holes TH1 and TH2 and each of the bonding parts 51 and 52 may have a facing area. Therefore, the first bonding portion 51 of the light emitting device 151 and the first frame 210 may be attached by a material provided by the first through hole TH1. The second bonding portion 52 of the light emitting element 151 and the second frame 220 may be attached by a material provided by the first through hole TH1.

The distance from the upper regions of the first and second through holes TH1 and TH2 to the side ends of the first and second bonding parts 51 and 52 in the X direction is 40 micrometers or more, for example, 40 to 60 micrometers. can be provided. When the distance is 40 micrometers or more, a process margin for preventing the first and second bonding parts 51 and 52 from being exposed on the bottom surfaces of the first and second through holes TH1 and TH2 may be secured. . In addition, when the distance is 60 micrometers or less, the area of the first and second bonding parts 51 and 52 exposed to the first and second through holes TH1 and TH2 may be secured. and the resistance of the first and second bonding parts 51 and 52 exposed by the second through holes TH1 and TH2 can be lowered, thereby reducing the exposure of the first and second through holes TH1 and TH2. Current can be smoothly injected into the first and second bonding parts 51 and 52 .

The support body 250 may be disposed between the first and second frames 210 and 220 and may be disposed between the first and second through holes TH1 and TH2. The body 250 may be formed to have the same thickness as that of the first and second frames 210 and 220 .

The conductive layers 321 and 323 may be provided in the first and second through holes TH1 and TH2. The conductive layers 321 and 323 disposed in the first and second through holes TH1 and TH2 may be disposed below the first and second bonding parts 51 and 52 . The conductive layers 321 and 323 include a first conductive layer 321 disposed in the first through hole TH1 and a second conductive layer 323 disposed in the second through hole TH2. Upper and lower widths of the first and second conductive layers 321 and 323 may be smaller than upper and lower widths of the first and second bonding parts 51 and 52 .

The conductive layers 321 and 323 may be disposed in direct contact with lower surfaces of the first and second bonding parts 51 and 52 . The conductive layers 321 and 323 may be electrically connected to the first and second bonding parts 51 and 52 . The conductive layers 321 and 323 may be disposed to be surrounded by the frames 210 and 220 .

The conductive layers 321 and 323 may include one material selected from a group including Ag, Au, Pt, Sn, Cu, and the like, or an alloy thereof. However, it is not limited thereto, and a material capable of securing a conductive function may be used as the conductive layers 321 and 323 .

As the conductive layers 321 and 323 in the first and second through holes TH1 and TH2, a material capable of securing a conductive function may be used. The conductive layers 321 and 323 are solder paste and may be formed by mixing powder particles or particle particles and flux. For example, the conductive layers 321 and 323 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, and the like, and may be composed of multiple layers composed of different materials or multiple layers or single layers composed of alloys. For example, the conductive layers 321 and 323 may include a Sn-Ag-Cu (SAC) material or a SAC-based material.

At least one of the respective bonding parts 51 and 52 may be bonded by an intermetallic compound layer. The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , wherein x satisfies the conditions of 0<x<1, y=1-x, x>y can In the light emitting device package of the present invention, a conductive material, for example, conductive layers 321 and 323 or a conductive paste may be formed in at least one or both of the through holes TH1 and TH2. The conductive layer 321 disposed in the first and second through holes TH1 and TH2 occupies 30% or more of the volume of the first and second through holes TH1 and TH2, for example, in a range of 30% to 100%. If it is smaller than the above range, electrical reliability may be lowered, and if it is larger than the above range, bonding force with the circuit board may be lowered due to protrusion of the conductive layers 321 and 323.

The first bonding part 51 of the light emitting element 151 is formed by forming the first conductive layer 321 with the material constituting the first conductive layer 321 or the first conductive layer 321 is formed. In a heat treatment process after being provided, an alloy layer having an intermetallic compound (IMC) may be formed between the first conductive layer 321 and the first frame 210 or/and the first bonding part 51. have. The alloy layer may include at least one intermetallic compound layer selected from a group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by combining a first material and a second material, the first material may be provided from the conductive layer 321, and the second material may be provided from the first bonding part 51. can

The second bonding part 52 of the light emitting element 151 is formed by the material constituting the second conductive layer 323 and the process of forming the second conductive layer 323 or the second conductive layer 323 In a heat treatment process after being provided, an alloy layer having an intermetallic compound (IMC) may be formed between the second conductive layer 323 and the second frame 220 or/and the second bonding part 52. have. The alloy layer may include at least one intermetallic compound layer selected from a group including AgSn, CuSn, AuSn, and the like. The intermetallic compound layer may be formed by combining a first material and a second material, the first material may be provided from the second conductive layer 323, and the second material may be provided from the second bonding part 52. can be provided.

When the first and second conductive layers 321 and 323 contain a Sn material and the metal layer in contact with the conductive layers 321 and 323 includes an Ag material, in the process of providing the conductive layers 321 and 323 or in the heat treatment process after being provided An intermetallic compound layer of AgSn may be formed by combining a Sn material and an Ag material.

Alternatively, when the conductive layers 321 and 323 include a Sn material and the metal layer in contact with the conductive layers 321 and 323 includes an Au material, during the process of providing the conductive layers 321 and 323 or the heat treatment process after the provision of the Sn material An intermetallic compound layer of AuSn may be formed by the combination of and Au material.

Alternatively, when the conductive layers 321 and 323 include a Sn material and the metal layer in contact with the conductive layers 321 and 323 includes a Cu material, during the process of providing the conductive layers 321 and 323 or the heat treatment process after the provision of the Sn material An intermetallic compound layer of CuSn may be formed by the combination of and Cu material.

Alternatively, when the conductive layers 321 and 323 include an Ag material and some of the metal layers in contact with the conductive layers 321 and 323 include a Sn material, in the process of providing the conductive layers 321 and 323 or in the heat treatment process after being provided. An intermetallic compound layer of AgSn may be formed by combining Ag and Sn materials.

The intermetallic compound layer described above may have a higher melting point than other bonding materials. In addition, the heat treatment process for forming the metallic compound layer may be performed at a lower temperature than the melting point of a general bonding material. Therefore, the light emitting device package according to the embodiment has the advantage of not deteriorating electrical connection and physical bonding force because re-melting does not occur even when bonded to a main substrate or the like through a reflow process. .

In addition, according to the light emitting device package according to the embodiment, the package body does not need to be exposed to high temperatures in a process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body from being damaged or discolored due to exposure to high temperatures. Accordingly, the range of selection for the material constituting the support body 250 can be widened. According to the embodiment, the support body 250 may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic.

According to the embodiment, the first conductive layer 321 of the first through hole TH1 may be electrically connected to the first bonding part 51, and the second conductive layer of the second through hole TH2. 323 may be electrically connected to the second bonding part 52 . For example, external power may be supplied to the first and second conductive layers 321 and 323 disposed in the first and second through holes TH1 and TH2, and thus the light emitting element 151 may be driven. have. The first and second bonding parts 51 and 52 of the light emitting device 151 may be electrically connected to the first and second conductive layers 321 and 323 and the first and second frames 210 and 220 .

When viewed from the top of the light emitting element 151, when the conductive layers 321 and 323 move outward from the light emitting element 151, the conductive layers 321 and 323 cover the side of the light emitting element 151. may spread and spread. As such, when the conductive layers 321 and 323 are moved to the side of the light emitting element 151, the first conductivity type semiconductor layer and the second conductivity type semiconductor layer of the light emitting element 151 may be electrically shorted. . When the first conductive layers 321 and 323 are moved to the side of the light emitting element 151, light extraction efficiency of the light emitting element 151 may decrease. To this end, resins 162 and 164 are disposed around the lower circumference of the light emitting element 151 to prevent the conductive layers 321 and 323 from moving outwardly out of the region. Therefore, the resins 162 and 164 can prevent the conductive layers 321 and 323 from moving to the side of the light emitting element 151, prevent the light emitting element 151 from being electrically shorted, and improve light extraction efficiency. can be improved

The support body 250 may be made of an insulating material or a resin material. The body 250 includes polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, epoxy molding compound (EMC), and silicone molding compound. (SMC), ceramic, polyimide (PI), photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. When the support body 250 is made of a resin material, it may be made of a material containing a metal oxide therein, for example, TiO ₂ , SiO ₂ , Al ₂ O ₃ , and the like.

The support body 250 may include a first recess 160 . The first recess 160 may be provided concavely on the lower surface of the support body 250 . The first recess 160 may be provided in the support body 250 . One or a plurality of first recesses 160 may be disposed above the support body 250 .

The first recess 160 may be disposed between the first and second through holes TH1 and TH2, or may be disposed such that at least a part or all of the area overlaps the light emitting element 151 in a vertical direction. The first recess 160 is a region in which the upper portion of the support body 250 is concavely depressed, and may be provided concavely from the upper surface to the lower surface of the support body 250 . A part of the first recess 160 may be disposed below the light emitting device 151 .

When viewed from the top of the light emitting device 151 , the first recess 160 may be disposed between the first bonding part 51 and the second bonding part 52 . The depth of the first recess 160 may be provided smaller than that of the first through hole TH1. The depth of the first recess 160 may be determined considering the stable strength of the supporting body 250 and/or preventing cracks from occurring in the supporting body 250 due to heat emitted from the light emitting device 151. can

The first resin 162 may be disposed in the first recess 160 . The first resin 162 may be disposed between the light emitting element 151 and the support body 250 . The first resin 162 may be adhered to the lower surface of the light emitting element 151 and the upper surface of the support body 250 . The first resin 162 may be adhered to the lower surface of the light emitting device 151 and the upper surfaces of the first and second frames 210 and 220 . The first resin 162 may be disposed between the first bonding part 52 and the second bonding part 52 . For example, the first resin 162 may be disposed in contact with the side surfaces of the first bonding part 51 and the side surface of the second bonding part 52 .

The first resin 162 may provide a stable fixing force between the light emitting element 151 and the support body 250 . For example, the first resin 162 may be placed in direct contact with the upper surface of the support body 250 . The first resin 162 may be placed in direct contact with the lower surface of the light emitting element 151 . For example, the first resin 162 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. can In addition, the first resin 162 may reflect light emitted from the light emitting element 151 . When the first resin 162 has a reflective function, the first resin may include white silicone. When the first resin 162 includes a reflective function, the first resin 162 may be made of a material including, for example, TiO ₂ , SiO ₂ , Al ₂ O ₃ , and the like.

The first recess 160 may provide an appropriate space in which a kind of underfill process can be performed under the light emitting device 151 . The first recess 160 may be provided with a depth equal to or greater than a first depth so that the first resin 162 can be sufficiently provided between the lower surface of the light emitting device 151 and the upper surface of the support body 250. . In addition, the first recess 160 may be provided with a second depth or less to provide stable strength of the support body 250 .

The depth and width of the first recess 160 may affect the formation position and fixing force of the first resin 162 . The depth and width of the first recess 160 may be determined so that sufficient fixing force can be provided by the first resin 162 disposed between the support body 250 and the light emitting element 151 . For example, the depth of the first recess 160 may be 20 micrometers to 60 micrometers. Also, the width of the first recess 160 may be 140 micrometers to 160 micrometers.

The second resin 164 may be disposed around the lower surface of the light emitting element 151 . The second resin 164 may be disposed between the first and second frames 210 and 220 and the light emitting device package 100 . An inner portion of the second resin 164 may be disposed between the first and second frames 210 and 220 and the light emitting element 151 . The outer portion of the second resin 164 may be disposed between the first and second frames 210 and 220 and the body 120 .

The second resin 164 may contact the lower surface of the light emitting element 151 , the lower surface of the body 120 , and the lower surface of the adhesive layer 130 . The second resin 164 may reflect light leaking downward and block moisture penetrating into the lower portion of the light emitting element 151 .

The second resin 164 may be the same as the first resin 162 . The second resin 164 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. In addition, the first and second resins 162 and 164 may reflect light emitted from the light emitting element 151 . When the first and second resins 162 and 164 have a reflective function, they may also include white silicone.

An optical sheet or an optical lens may be disposed on the light source device, the light source module, or the light source package.

26 is an example of a lamp to which a light emitting device package according to an embodiment(s) of the present invention is applied.

Referring to FIG. 26 , lamps may be selectively applied to vehicle lamps such as stop lamps, fog lamps, turn signal lamps, rear lamps, reversing lamps, fog lamps, side lamps, high lamps, and low lamps. The vehicle lamp may include a bracket 20 , a light emitting device package 10 according to the embodiment disposed on the bracket 20 , and a lens 20 covering the light emitting device package 20 . In such a vehicle lamp, the light emitting device package 20 is applied to a high-power lamp to which a high current is applied, so crack generation can be improved and deterioration or discoloration can be reduced.

27 is a plan view illustrating an example of a light emitting device according to an embodiment of the present invention, and FIG. 28 is a cross-sectional view of the light emitting device shown in FIG. 27 taken along line F-F.

Meanwhile, for better understanding, in FIG. 27 , the first sub-electrode is disposed under the first bonding part 1171 and the second bonding part 1172, but is electrically connected to the first bonding part 1171. 1141 and the second sub-electrode 1142 electrically connected to the second bonding portion 1172 are shown so that they can be seen.

As shown in FIG. 28 , the light emitting device 1000 according to the embodiment may include a light emitting structure 1110 disposed on a substrate 1105 . The substrate 1105 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 1105 may be provided as PSS (Patterned Sapphire Substrate) having a concavo-convex pattern formed on an upper surface thereof.

The light emitting structure 1110 may include a first conductivity type semiconductor layer 1111 , an active layer 1112 , and a second conductivity type semiconductor layer 1113 . The active layer 1112 may be disposed between the first conductivity type semiconductor layer 1111 and the second conductivity type semiconductor layer 1113 . For example, the active layer 1112 may be disposed on the first conductivity-type semiconductor layer 1111 , and the second conductivity-type semiconductor layer 1113 may be disposed on the active layer 1112 .

The light emitting device 1000 according to the embodiment may include a light-transmitting electrode layer 1130 . The light-transmitting electrode layer 1130 may increase light output by improving current diffusion. For example, the light-transmitting electrode layer 1130 may include at least one selected from a group including a metal, a metal oxide, and a metal nitride. The light-transmitting electrode layer 1130 may include a light-transmitting material. The light-transmitting electrode layer 1130 may be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), or indium IGZO (IGZO). gallium zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni/ It may include at least one selected from the group including IrOx/Au/ITO, Pt, Ni, Au, Rh, and Pd.

The light emitting device 1000 according to the embodiment may include a reflective layer 1160 . The reflective layer 1160 may include a first reflective layer 1161 , a second reflective layer 1162 , and a third reflective layer 1163 . The reflective layer 1160 may be disposed on the light-transmitting electrode layer 1130 . The second reflective layer 1162 may include a first opening h1 exposing the light-transmitting electrode layer 1130 . The second reflective layer 1162 may include a plurality of first openings h1 disposed on the light-transmissive electrode layer 1130 . The first reflective layer 1161 may include a plurality of second openings h2 exposing an upper surface of the first conductivity type semiconductor layer 1111 .

The third reflective layer 1163 may be disposed between the first reflective layer 1161 and the second reflective layer 1162 . For example, the third reflective layer 1163 may be connected to the first reflective layer 1161 . Also, the third reflective layer 1163 may be connected to the second reflective layer 1162 . The third reflective layer 1163 may be disposed in direct physical contact with the first reflective layer 1161 and the second reflective layer 1162 .

The reflective layer 1160 according to the embodiment may contact the second conductivity-type semiconductor layer 1113 through a plurality of contact holes provided in the light-transmissive electrode layer 1130 . The reflective layer 1160 may physically contact the upper surface of the second conductivity type semiconductor layer 1113 through a plurality of contact holes provided in the light-transmissive electrode layer 1130 .

The reflective layer 1160 may be provided as an insulating reflective layer. For example, the reflective layer 1160 may be provided as a Distributed Bragg Reflector (DBR) layer. In addition, the reflective layer 1160 may be provided as an Omni Directional Reflector (ODR) layer. In addition, the reflective layer 1160 may be provided by stacking a DBR layer and an ODR layer.

The light emitting device 1000 according to the embodiment may include a first sub-electrode 1141 and a second sub-electrode 1142 . The first sub-electrode 1141 may be electrically connected to the first conductive semiconductor layer 1111 within the second opening h2. The first sub-electrode 1141 may be disposed on the first conductive semiconductor layer 1111 . For example, according to the light emitting device 1000 according to the embodiment, the first sub-electrode 1141 penetrates the second conductivity-type semiconductor layer 1113 and the active layer 1112 to form the first conductivity-type semiconductor layer ( 1111) may be disposed on the upper surface of the first conductivity type semiconductor layer 1111 in a recess extending to a partial region.

The first sub-electrode 1141 may be electrically connected to the upper surface of the first conductive semiconductor layer 1111 through the second opening h2 provided in the first reflective layer 1161 . The second opening h2 and the recess may vertically overlap. For example, the first sub-electrode 1141 may be formed on the upper surface of the first conductive semiconductor layer 1111 in a plurality of recess regions. can be contacted directly.

The second sub-electrode 1142 may be electrically connected to the second conductive semiconductor layer 1113 . The second sub-electrode 1142 may be disposed on the second conductive semiconductor layer 1113 . According to the embodiment, the translucent electrode layer 1130 may be disposed between the second sub-electrode 1142 and the second conductivity-type semiconductor layer 1113 .

The second sub-electrode 1142 may be electrically connected to the second conductive semiconductor layer 1113 through the first opening h1 provided in the second reflective layer 1162 . For example, the second sub-electrode 1142 may be electrically connected to the second conductivity-type semiconductor layer 1113 through the transmissive electrode layer 1130 in a plurality of P regions.

The second sub-electrode 1142 may directly contact the upper surface of the light-transmitting electrode layer 1130 through the plurality of first openings h1 provided in the second reflective layer 1162 in the plurality of P regions. According to the embodiment, the first sub-electrode 1141 and the second sub-electrode 1142 may have polarities and may be spaced apart from each other.

The first sub-electrode 1141 and the second sub-electrode 1142 may have a single-layer or multi-layer structure. For example, the first sub-electrode 1141 and the second sub-electrode 1142 may be ohmic electrodes. For example, the first sub-electrode 1141 and the second sub-electrode 1142 may be ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO, Ag , Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, or at least one or an alloy of two or more of these materials. In FIG. 28, regions R11, R12, and R13 are indicated to distinguish overlapping regions for each region of each sub-electrode.

The light emitting device 1000 according to the embodiment may include a protective layer 1150. The protective layer 1150 may include a plurality of third openings h3 exposing the second sub-electrode 1142 . The plurality of third openings h3 may be disposed to correspond to the plurality of PB regions provided in the second sub-electrode 1142 . In addition, the protective layer 1150 may include a plurality of fourth openings h4 exposing the first sub-electrode 1141 . The plurality of fourth openings h4 may be disposed to correspond to the plurality of NB regions provided in the first sub-electrode 1141 . The protective layer 1150 may be disposed on the reflective layer 1160 . The protective layer 1150 may be disposed on the first reflective layer 1161 , the second reflective layer 1162 , and the third reflective layer 1163 . For example, the protective layer 1150 may be provided with an insulating material. For example, the protective layer 1150 is Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y It may be formed of at least one material selected from the group including.

The light emitting device 1000 according to the embodiment may include a first bonding part 1171 and a second bonding part 1172 disposed on the protective layer 1150 . The first bonding part 1171 may be disposed on the first reflective layer 1161 . Also, the second bonding part 1172 may be disposed on the second reflective layer 1162 . The second bonding part 1172 may be spaced apart from the first bonding part 1171 . The first bonding portion 1171 may contact the upper surface of the first sub-electrode 1141 through the plurality of fourth openings h4 provided in the protective layer 1150 in the plurality of NB regions. The plurality of NB areas may be arranged to be vertically offset from the second opening h2. When the plurality of NB regions and the second opening h2 are vertically displaced from each other, current injected into the first bonding part 1171 can be evenly spread in the horizontal direction of the first sub-electrode 1141, Accordingly, current may be evenly injected in the plurality of NB regions.

In addition, the second bonding part 1172 may contact the upper surface of the second sub-electrode 1142 through the plurality of third openings h3 provided in the protective layer 1150 in a plurality of PB regions. have. When the plurality of PB regions and the plurality of first openings h1 are not vertically overlapped, the current injected into the second bonding part 1172 spreads evenly in the horizontal direction of the second sub-electrode 1142. Therefore, current can be evenly injected in the plurality of PB regions. Since power can be supplied through a plurality of areas, there is an advantage in that a current dissipation effect occurs and an operating voltage can be reduced according to the contact area increase and the contact area distribution.

Accordingly, the first reflective layer 1161 and the second reflective layer 1162 reflect light emitted from the active layer 1112 of the light emitting structure 1110 to form a first sub-electrode 1141 and a second sub-electrode ( 1142), the luminous intensity Po may be improved by minimizing light absorption. The first reflective layer 1161 and the second reflective layer 1162 may form a DBR structure in which materials having different refractive indices are repeatedly disposed. For example, the first reflective layer 1161 and the second reflective layer 1162 are TiO ₂ , SiO ₂ , Ta ₂ O ₅ , HfO ₂ It may be arranged in a single-layer or laminated structure including at least one of them. Also, according to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided as ODR layers. According to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided in a kind of hybrid form in which a DBR layer and an ODR layer are stacked.

When the light emitting device according to the embodiment is implemented as a light emitting device package by being mounted in a flip chip bonding method, light provided from the light emitting structure 1110 may be emitted through the substrate 1105 . Light emitted from the light emitting structure 1110 may be reflected by the first reflective layer 1161 and the second reflective layer 1162 and emitted toward the substrate 1105 .

In addition, light emitted from the light emitting structure 1110 may also be emitted in a lateral direction of the light emitting structure 1110 . In addition, light emitted from the light emitting structure 1110 is bonded to the first bonding unit 1171 and the second bonding unit among the surfaces on which the first bonding unit 1171 and the second bonding unit 1172 are disposed. The portion 1172 may be emitted to the outside through an area not provided.

Accordingly, the light emitting device 1000 according to the embodiment can emit light in six directions surrounding the light emitting structure 1110, and can significantly improve the luminous intensity.

Meanwhile, according to the light emitting device according to the embodiment, when viewed from the upper direction of the light emitting device 1000, the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 is The portion 1171 and the second bonding portion 1172 may be provided equal to or smaller than 60% of the total area of the upper surface of the light emitting device 1000 .

For example, the total area of the upper surface of the light emitting device 1000 may correspond to an area defined by the horizontal length and the vertical length of the lower surface of the first conductivity type semiconductor layer 1111 of the light emitting structure 1110. . Also, the entire area of the upper surface of the light emitting device 1000 may correspond to the area of the upper or lower surface of the substrate 1105 .

In this way, the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is provided equal to or smaller than 60% of the total area of the light emitting device 1000, so that the first bonding The amount of light emitted to the surface where the portion 1171 and the second bonding portion 1172 are disposed can be increased. Accordingly, according to the embodiment, since the amount of light emitted in the direction of the six surfaces of the light emitting device 1000 increases, the light extraction efficiency can be improved and the luminous intensity Po can be increased.

In addition, when viewed from the upper direction of the light emitting element 1000, the sum of the area of the first bonding part 1171 and the area of the second bonding part 1172 is 30 of the total area of the light emitting element 1000. may be given equal to or greater than the %.

In this way, the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is equal to or larger than 30% of the total area of the light emitting device 1000, so that the first bonding Stable mounting can be performed through the unit 1171 and the second bonding unit 1172, and electrical characteristics of the light emitting device 1000 can be secured.

In the light emitting device 1000 according to the embodiment, in consideration of light extraction efficiency and bonding stability, the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is the light emitting element 1000 ) can be selected to be 30% or more and 60% or less of the total area of ).

That is, when the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 is greater than or equal to 30% and less than or equal to 100% of the total area of the light emitting device 1000, the light emitting device 1000 Stable mounting can be performed by securing electrical characteristics and securing bonding force to be mounted on the light emitting device package.

In addition, when the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is more than 0% and less than 60% of the total area of the light emitting device 1000, the first bonding part 1171 ) and the second bonding unit 1172 are disposed, the light extraction efficiency of the light emitting device 1000 may be improved and the light intensity Po may be increased.

In the embodiment, the areas of the first bonding part 1171 and the second bonding part 1172 are secured in order to secure the electrical characteristics of the light emitting device 1000 and the bonding force mounted on the light emitting device package, and to increase the light intensity. The sum of was selected to be 30% or more to 60% or less of the total area of the light emitting device 1000.

Also, according to the light emitting device 1000 according to the embodiment, the third reflective layer 1163 may be disposed between the first bonding part 1171 and the second bonding part 1172 . For example, the length of the third reflective layer 1163 along the long axis direction of the light emitting element 1000 may be disposed corresponding to the distance between the first bonding part 1171 and the second bonding part 1172. have. Also, the area of the third reflective layer 1163 may be 10% or more and 25% or less of the entire upper surface of the light emitting device 1000, for example.

When the area of the third reflective layer 1163 is 10% or more of the total upper surface of the light emitting device 1000, discoloration or cracking of the package body disposed under the light emitting device can be prevented, and 25% In the case of the following, it is advantageous to secure light extraction efficiency to emit light from the six sides of the light emitting device.

In addition, in another embodiment, the area of the third reflective layer 1163 is disposed to be greater than 0% to less than 10% of the entire upper surface of the light emitting device 1000 in order to secure a higher light extraction efficiency without being limited thereto. In order to further secure an effect of preventing discoloration or cracking in the package body, the area of the third reflective layer 1163 is greater than 25% to 100% of the entire upper surface of the light emitting device 1000. Can be placed below.

In addition, a second region provided between the side surface disposed in the long axis direction of the light emitting element 1000 and the first bonding part 1171 or the second bonding part 1172 adjacent to the light emitting structure 1110 is generated. Light can be transmitted and emitted.

In addition, the light generated by the light emitting structure is transmitted to a third area provided between the first bonding part 1171 and the second bonding part 1172 adjacent to the side surface disposed in the direction of the short axis of the light emitting element 1000. It can be permeated and released.

According to an embodiment, the size of the first reflective layer 1161 may be several micrometers larger than that of the first bonding part 1171 . For example, the area of the first reflective layer 1161 may be provided with a size sufficient to completely cover the area of the first bonding part 1171 . Considering the process error, the length of one side of the first reflective layer 1161 may be greater than the length of one side of the first bonding part 1171 by, for example, about 4 micrometers to about 10 micrometers.

Also, the size of the second reflective layer 1162 may be several micrometers larger than that of the second bonding portion 1172 . For example, the area of the second reflective layer 1162 may be provided to a size sufficient to completely cover the area of the second bonding portion 1172 . Considering the process error, the length of one side of the second reflective layer 1162 may be greater than the length of one side of the second bonding part 1172 by, for example, about 4 micrometers to about 10 micrometers.

According to the embodiment, the light emitted from the light emitting structure 1110 is transmitted to the first bonding unit 1171 and the second bonding unit 1172 by the first reflective layer 1161 and the second reflective layer 1162. ) and can be reflected without incident. Accordingly, according to the embodiment, the light emitted from the light emitting structure 1110 is incident on the first bonding unit 1171 and the second bonding unit 1172, and loss thereof can be minimized.

In addition, according to the light emitting device 1000 according to the embodiment, since the third reflective layer 1163 is disposed between the first bonding unit 1171 and the second bonding unit 1172, the first bonding unit ( 1171) and the second bonding portion 1172 can adjust the amount of light emitted.

As described above, the light emitting device 1000 according to the embodiment may be mounted in a flip chip bonding method and provided in the form of a light emitting device package. At this time, when the package body in which the light emitting device 1000 is mounted is made of resin or the like, the package body is discolored by strong short-wavelength light emitted from the light emitting device 1000 in the lower region of the light emitting device 1000. or cracks may occur.

However, according to the light emitting device 1000 according to the embodiment, since the amount of light emitted between the regions where the first bonding part 1171 and the second bonding part 1172 are disposed can be adjusted, the light emitting element 1000 ) It is possible to prevent discoloration or cracking of the package body disposed in the lower region.

According to the embodiment, the light is emitted from an area of 20% or more of the upper surface of the light emitting device 1000 on which the first bonding part 1171, the second bonding part 1172, and the third reflective layer 1163 are disposed. Light generated by the structure 1110 may be transmitted and emitted.

Accordingly, according to the embodiment, since the amount of light emitted in the direction of the six surfaces of the light emitting device 1000 increases, the light extraction efficiency can be improved and the luminous intensity Po can be increased. In addition, discoloration or cracking of the package body disposed close to the lower surface of the light emitting device 1000 can be prevented.

In addition, according to the light emitting device 1000 according to the embodiment, a plurality of contact holes C1 , C2 , and C3 may be provided in the light-transmitting electrode layer 1130 . The second conductive semiconductor layer 1113 and the reflective layer 1160 may be bonded through the plurality of contact holes C1 , C2 , and C3 provided in the light-transmissive electrode layer 1130 . Since the reflective layer 1160 can directly contact the second conductivity-type semiconductor layer 1113, adhesive strength can be improved compared to when the reflective layer 1160 contacts the translucent electrode layer 1130.

When the reflective layer 1160 directly contacts only the light-transmissive electrode layer 1130, bonding strength or adhesive strength between the reflective layer 1160 and the light-transmitting electrode layer 1130 may be weakened. For example, when the insulating layer and the metal layer are bonded, bonding strength or adhesive strength between materials may be weakened.

For example, when the bonding or adhesive strength between the reflective layer 1160 and the light-transmissive electrode layer 1130 is weak, separation may occur between the two layers. In this way, when separation occurs between the reflective layer 1160 and the light-transmitting electrode layer 1130, the characteristics of the light emitting device 1000 may be deteriorated, and reliability of the light emitting device 1000 cannot be secured.

However, according to the embodiment, since the reflective layer 1160 may directly contact the second conductivity type semiconductor layer 1113, the reflective layer 1160, the translucent electrode layer 1130, and the second conductivity type semiconductor layer The bonding force and adhesive force between (1113) can be stably provided.

Therefore, according to the embodiment, since the bonding force between the reflective layer 1160 and the second conductivity-type semiconductor layer 1113 can be stably provided, the reflective layer 1160 is prevented from being separated from the translucent electrode layer 1130. You will be able to do it. In addition, since the bonding strength between the reflective layer 1160 and the second conductivity type semiconductor layer 1113 can be stably provided, the reliability of the light emitting device 1000 can be improved.

Meanwhile, as described above, a plurality of contact holes C1 , C2 , and C3 may be provided in the light-transmissive electrode layer 1130 . Light emitted from the active layer 1112 is incident on the reflective layer 1160 through the plurality of contact holes C1 , C2 , and C3 provided in the light-transmissive electrode layer 1130 and can be reflected. Accordingly, loss of light generated in the active layer 1112 incident to the translucent electrode layer 1130 can be reduced and light extraction efficiency can be improved. Accordingly, according to the light emitting device 1000 according to the embodiment, the luminous intensity can be improved.

The light emitting device of the light emitting device package according to the embodiment of the present invention has been described as a structure in which the light emitting structure has a single light emitting structure or a single light emitting cell. When the light emitting cell includes the above light emitting structure, the driving voltage of the light emitting device may be the voltage applied to one light emitting cell. As an example of the light emitting device disclosed in the embodiment, a light emitting device having two or three or more light emitting cells in one package may be included. Accordingly, a high voltage light emitting device package can be provided. Such a high-voltage light-emitting device package can be voltage-controlled, and thus can give a dimming effect.

Meanwhile, one or a plurality of light emitting device packages according to an embodiment of the present invention may be disposed on a circuit board and applied to a light source device. In addition, the light source device may include a display device, a lighting device, a head lamp, and the like according to industrial fields.

As an example of the light source device, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module including a light emitting element that emits light, and a light emitting module disposed in front of the reflector and guiding light emitted from the light emitting module forward. A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying image signals to the display panel, A color filter disposed on the front side may be included. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. In addition, the display device may have a structure in which light emitting elements emitting red, green, and blue light are respectively disposed without including a color filter.

As another example of a light source device, a headlamp includes a light emitting module including a light emitting device package disposed on a substrate, a reflector for reflecting light emitted from the light emitting module in a predetermined direction, for example, forward, and a light reflected by the reflector. It may include a lens that refracts light forward, and a shade that blocks or reflects a part of the light reflected by the reflector and directed to the lens to achieve a light distribution pattern desired by a designer.

A lighting device, which is another example of a light source device, may include a cover, a light source module, a radiator, a power supply unit, an inner case, and a socket. In addition, the light source device according to an embodiment of the present invention may further include any one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment of the present invention.

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified with respect to other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to these combinations and variations should be interpreted as being included in the scope of the embodiments.

Although the above has been described centering on the embodiment, this is only an example and is not intended to limit the embodiment, and those skilled in the art to which the embodiment belongs may find various things not exemplified above to the extent that they do not deviate from the essential characteristics of the present embodiment. It will be appreciated that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

Claims (14)

In the light emitting device package manufacturing method,
forming an adhesive layer on a first region of a wavelength conversion layer made of glass including a phosphor;
forming a body made of a reflective resin material on the second region of the wavelength conversion layer;
attaching a light emitting element on the adhesive layer; and
dicing the body to the size of a package having at least one light emitting element;
The light emitting element includes first and second bonding parts on top, a light emitting structure under the first and second bonding parts, and a substrate bonded to the adhesive layer under the light emitting structure,
The body has an opening through which upper and lower surfaces pass,
The light emitting element is disposed in the opening,
The side surface of the wavelength conversion layer is formed on the same vertical plane as the side surface of the body,
The light emitting device package manufacturing method,
Forming a light extraction structure on an upper surface of the wavelength conversion layer, in which concave and convex portions are alternately disposed or rough protrusions are disposed.
Including more,
The adhesive layer is disposed between the body and the substrate side of the light emitting device,
The lower end of the adhesive layer is more adjacent to the lower surface of the substrate than the lower end of the light emitting structure,
The outer side of the adhesive layer is an inclined surface or an angled surface,
When the outer side of the adhesive layer is an inclined surface, the inclined angle of the outer side of the adhesive layer is 45 degrees or less with respect to the side of the substrate.
A method for manufacturing a light emitting device package. delete delete delete delete A light emitting device including a light emitting structure and a substrate on the first and second bonding parts, the first and second bonding parts on the lower part;
a body made of a reflective resin material around the light emitting element;
a wavelength conversion layer on the light emitting element and the body; and
An adhesive layer bonded between the wavelength conversion layer and the light emitting element and between the light emitting element and the body,
The light extraction structure is formed on the upper surface of the wavelength conversion layer and has a structure in which rough protrusions are arranged or concave and convex parts are alternately arranged,
The adhesive layer is disposed between the body and the substrate side of the light emitting device,
The lower end of the adhesive layer is more adjacent to the lower surface of the substrate than the lower end of the light emitting structure,
The outer side of the adhesive layer is an inclined surface or an angled surface,
When the outer side of the adhesive layer is an inclined surface, the inclined angle of the outer side of the adhesive layer is 45 degrees or less with respect to the side of the substrate.
Light emitting device package. delete According to claim 6,
A light emitting device package wherein a lower portion of the body extends to a lower surface of the light emitting device. delete According to claim 6,
The wavelength conversion layer is a light emitting device package formed of a glass material having a phosphor. According to claim 6,
The first and second bonding parts of the light emitting device are exposed from the lower portion of the body. According to claim 6,
The light emitting device package of claim 1 , wherein a distance between an outer portion of the adhesive layer and a side surface of the light emitting device is 200 micrometers or less. multiple frames; and
Including one or more light emitting device packages having first and second bonding parts disposed on lower portions of the plurality of frames,
The light emitting device package is any one of claims 6, 8, and 10 to 12,
The plurality of frames have a conductive layer and have through holes facing the first and second bonding parts. According to claim 13,
A support body disposed between the plurality of frames
Including more,
The support body includes a first recess concave in a direction from the upper surface of the support body to the lower surface,
At least a portion of the first recess is disposed under the light emitting element.

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