KR102501888B1 - Semiconductor device, light semiconducotr device package - Google Patents

Abstract

A semiconductor device package according to an embodiment includes first and second frames having first and second openings; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; and a conductive layer in the first and second openings. At least one of the first and second bonding pads faces the first and second frames, overlaps the first and second openings, and has a contact area in contact with the conductive layer and a first non-contact area not in contact with the conductive layer. Including, it is possible to prevent damage to the electrode by the conductive layer.

Description

Semiconductor device and semiconductor device package {SEMICONDUCTOR DEVICE, LIGHT SEMICONDUCOTR DEVICE PACKAGE}

The embodiment relates to a semiconductor device, a semiconductor device package, a method for manufacturing a semiconductor device package, and a light source device.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in various ways such as light emitting devices, light receiving devices, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials are developed in thin film growth technology and device materials to produce red, green, It has the advantage of being able to implement light in various wavelength bands such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material can implement a white light source with high efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when light receiving devices such as photodetectors or solar cells are manufactured using Group 3-5 or Group 2-6 compound semiconductor materials, photocurrent is generated by absorbing light in various wavelength ranges through the development of device materials. By doing so, it is possible to use light in a wide range of wavelengths from gamma rays to radio wavelengths. In addition, such a light-receiving element has advantages of fast response speed, safety, environmental friendliness, and easy control of element materials, so that it can be easily used in power control or ultra-high frequency circuits or communication modules.

Accordingly, the semiconductor device can replace a transmission module of an optical communication means, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, and can replace a fluorescent lamp or an incandescent bulb. Applications are expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, applications of semiconductor devices can be expanded to high-frequency application circuits, other power control devices, and communication modules.

The light emitting device (Light Emitting Device) may be provided as, for example, a p-n junction diode having a characteristic of converting electrical energy into light energy using a group 3-5 element or a group 2-6 element on the periodic table, and a compound semiconductor Various wavelengths can be implemented by adjusting the composition ratio.

For example, nitride semiconductors are of great interest in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, red light emitting devices, and the like using nitride semiconductors are commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, as a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm, in the wavelength range, in the case of a short wavelength, it is used for sterilization and purification, and in the case of a long wavelength, an exposure machine or a curing machine, etc. can be used

Ultraviolet light can be divided into three types in order of wavelength: UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm), and UV-C (200nm ~ 280nm). UV-A (315nm ~ 400nm) area is applied to various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit money discrimination, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm ~ 315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as semiconductor devices capable of providing high output are requested, research on semiconductor devices capable of increasing output by applying high power is being conducted.

In addition, in a semiconductor device package, research is being conducted on a method capable of improving light extraction efficiency of the semiconductor device and improving light intensity at the package end. In addition, in a semiconductor device package, research into a method for improving a bonding force between a package electrode and a semiconductor device is being conducted.

In addition, in semiconductor device packages, research is being conducted on ways to reduce manufacturing cost and improve manufacturing yield through process efficiency improvement and structural change.

An embodiment may provide a semiconductor device package or a light emitting device package in which an electrode of a semiconductor device or light emitting device facing the opening of the frame has a contact area and an open area or a non-contact area.

The embodiment provides a semiconductor device package or light emitting device package in which electrodes of a semiconductor device or light emitting device facing the opening of the frame are provided as a contact area and a non-contact area to disperse adhesive force with a conductive layer.

The embodiment may provide a semiconductor device package or a light emitting device package capable of improving light extraction efficiency and electrical characteristics.

The embodiment may provide a semiconductor device package or a light emitting device package capable of reducing manufacturing cost and improving manufacturing yield by improving process efficiency and presenting a new package structure.

The embodiment may provide a semiconductor device package or a light emitting device package capable of preventing a re-melting phenomenon from occurring in a bonding area of a semiconductor device package in a process of re-bonding the semiconductor device package to a substrate or the like.

A light emitting device package according to an embodiment includes a first frame having a first opening; a second frame having a second opening; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; a first conductive layer in the first opening; and a second conductive layer in the second opening, the first opening passing through upper and lower surfaces of the first frame, the second opening passing through upper and lower surfaces of the second frame, and 1 bonding pad faces the first frame and overlaps the first opening, the second electrode faces the second frame and overlaps the second opening, and the first electrode faces the first opening and overlaps the second opening. It may have a first contact area contacting the first conductive layer and a first non-contact area not contacting the first conductive layer.

According to an embodiment, the second electrode may include a second contact area contacting the second conductive layer and a second non-contact area not contacting the second conductive layer on the second opening.

According to an embodiment, the first and second conductive layers may include solder paste, and the body may be made of an insulating material.

According to the embodiment, in at least one of the first and second electrodes, the area of each of the first and second contact regions may be twice or more than the area of the particle constituting the first and second conductive layers. In at least one of the first and second electrodes, an area of each of the first and second non-contact regions may be 1.5 times or more than an area of particles constituting the first and second conductive layers.

According to an embodiment, the area of the first contact area of the first bonding pad may be smaller than the area of the upper surface of the first opening, and the area of the second contact area of the second electrode may be smaller than the area of the upper surface of the second opening. there is.

According to the embodiment, one or a plurality of first contact areas of the first bonding pad are disposed on the first opening, and one or a plurality of second contact areas of the second electrode are disposed on the second opening. One or more first non-contact areas of the first bonding pad are disposed on the first opening, have an area smaller than that of the first contact area, and have a second non-contact area of the second electrode. may be disposed on the second opening in one or a plurality thereof and may have an area smaller than that of the second contact area.

According to an embodiment, the first and second conductive layers may have a concave curved surface on the first and second non-contact areas, and may include at least one of an adhesive and a resin part disposed between the body and the light emitting element. can

According to an embodiment, the body includes a recess concave from the top to the bottom, the adhesive is disposed in the recess, and the adhesive is applied to the upper surface of the body, the lower surface of the light emitting device, and the first and second electrodes. can be contacted.

According to an embodiment, at least one of the adhesive and the resin part may be disposed outside the non-contact area of the first and second electrodes.

According to an embodiment, the first and second frames are conductive frames, and the adhesive may be formed of an insulating resin material.

According to the embodiment, the body may have a concave cavity around the light emitting device.

According to the semiconductor device package and the method of manufacturing the semiconductor device package according to the embodiment, damage to the electrodes can be reduced by providing a contact region and a non-contact region in the region corresponding to the opening of the package body to the electrodes of the light emitting device. there is.

According to the semiconductor device package and the semiconductor device package manufacturing method according to the embodiment, there are advantages in improving light extraction efficiency, electrical characteristics, and reliability.

According to the semiconductor device package and the semiconductor device package manufacturing method according to the embodiment, there is an advantage in that manufacturing cost can be reduced and manufacturing yield can be improved by improving process efficiency and presenting a new package structure.

The semiconductor device package according to the exemplary embodiment has an advantage of improving reliability of the semiconductor device package by preventing the reflector from discoloring by providing a body having high reflectivity.

According to the semiconductor device package and the semiconductor device manufacturing method according to the embodiment, the re-melting phenomenon can be prevented from occurring in the bonding area of the semiconductor device package in the process of re-bonding the semiconductor device package to a substrate or the like. there is

Reliability of a semiconductor device package or a light emitting device package according to an embodiment may be improved.

1 is a plan view of a light emitting device package according to a first embodiment of the present invention.
FIG. 2 is a bottom view of the light emitting device package shown in FIG. 1 .
FIG. 3 is a cross-sectional view taken along line DD of the light emitting device package shown in FIG. 1 .
FIG. 4 is a cross-sectional view taken along line EE of the light emitting device package shown in FIG. 1 .
FIG. 5 is a cross-sectional view taken along line FF of the light emitting device package shown in FIG. 1 .
FIG. 6 is a detailed view showing a first bonding pad and a first conductive layer of the light emitting device of FIG. 4 .
FIG. 7 is a detailed view showing a second electrode and a second conductive layer of the light emitting device of FIG. 5 .
8 is a partially enlarged view of the light emitting device package of FIG. 1 .
FIG. 9 is a view for explaining contact and non-contact areas between first and second electrodes and first and second conductive layers of the light emitting device of FIG. 8 .
FIG. 10 is another example of first and second electrodes and openings of the light emitting device of FIG. 8 .
11 is a first modified example of an electrode of a light emitting device according to an embodiment.
FIG. 12 is an example of arrangement of electrodes and openings of the body of the light emitting device of FIG. 11 .
FIG. 13 is a second modified example of an electrode of the light emitting device of FIG. 11 .
FIG. 14 is an example of arrangement of electrodes and openings of the body of the light emitting device of FIG. 11 .
15 to 17 are other modified examples of the electrode of the light emitting device according to the embodiment.
19 to 22 are examples of openings of a light emitting device according to an embodiment.
23 is a first modified example of the light emitting device package of FIG. 3 .
24 is a second modified example of the light emitting device package of FIG. 3 .
25 is an example of a module in which the light emitting device package of FIG. 3 is disposed on a circuit board.
26 is an example of a module in which the light emitting device package of FIG. 3 is disposed on a circuit board.
27 is a side cross-sectional view of a light emitting device package according to a second embodiment of the present invention.
28 is another cross-sectional view of the light emitting device package of FIG. 27 .
29 is an example of a plan view of a light emitting device according to an embodiment.
30 is a plan view illustrating another example of a light emitting device according to an embodiment.
31(a)(b) is a cross-sectional view showing a first bonding pad and a second bonding pad taken along a cross section of line AA of the light emitting device of FIG. 29 .

An embodiment will be described below with reference to the accompanying drawings. In the description of the embodiment, each layer (film), region, pattern or structure is "on/over" or "under" the substrate, each layer (film), region, pad or pattern. In the case where it is described as being formed in, "on/over" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criterion for the top/top or bottom of each layer will be described based on the drawings, but the embodiment is not limited thereto.

Hereinafter, a semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The semiconductor device of the semiconductor device package may include a light emitting device that emits light of ultraviolet, infrared, or visible light. Hereinafter, a description will be given based on the case where a light emitting element is applied as an example of a semiconductor device, and a package or light source device to which the light emitting element is applied may include a non-light emitting element such as a zener diode or a sensing element for monitoring wavelength or heat. Hereinafter, a semiconductor device package or a light emitting device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. Hereinafter, a case in which a light emitting device is applied as an example of a semiconductor device will be described.

<First Embodiment>

1 is a plan view of a light emitting device package according to a first embodiment of the present invention, FIG. 2 is a bottom view of the light emitting device package shown in FIG. 1, and FIG. 3 is a line D-D of the light emitting device package shown in FIG. FIG. 4 is a cross-sectional view of the light emitting device package shown in FIG. 1 along line E-E, FIG. 5 is a cross-sectional view of the light emitting device package shown in FIG. 1 taken along line F-F, and FIG. 6 is a cross-sectional view of the light emitting device of FIG. 4 A detailed view showing a first bonding pad and a first conductive layer, FIG. 7 is a detailed view showing a second electrode and a second conductive layer of the light emitting device of FIG. 5, and FIG. 8 is a portion of the light emitting device package of FIG. 1 9 is a view for explaining contact and non-contact areas between the first and second electrodes and the first and second conductive layers of the light emitting device of FIG. 8 .

1 to 5, the device package 100 according to the embodiment includes a package body 110 having a plurality of frames 111 and 112 and a body 113 disposed between the plurality of frames 111 and 112 and , For example, a semiconductor device disposed on the plurality of frames 111 and 112 may include a light emitting device 120 . Hereinafter, the device package 100 is a package in which the light emitting device 120 is disposed, and will be described as a light emitting device package.

<Package body 110>

The plurality of frames 111 and 112 may include at least two, for example, a first frame 111 and a second frame 112 . The first frame 111 and the second frame 112 may be spaced apart from each other. The first and second frames 111 and 112 may be spaced apart from each other in the X-axis direction.

The package body 110 may include a body 113. The body 113 may be disposed between the first frame 111 and the second frame 112 . The body 113 may function as an electrode separation line. The body 113 may also be referred to as an insulating member. The body 113 may be disposed between the frames 111 and 112 in a Y-axis direction perpendicular to the X-axis direction.

The body 113 may be disposed on the first frame 111 . Also, the body 113 may be disposed on the second frame 112 . The body 113 may provide an inclined surface disposed on the first frame 111 and the second frame 112 . A wall portion 110A having a cavity C may be provided on the first frame 111 and the second frame 112 by the inclined surface of the body 113 . The wall portion 110A may be integrally formed with the body 113 or may be formed separately. According to the embodiment, the package body 110 may be provided in a structure with a cavity (C), or may be provided in a structure with a flat top surface without a cavity (C). The wall portion 110A may be removed.

For example, the body 113 may include polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, epoxy molding compound (EMC), It may be formed of at least one selected from a group including silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. In addition, the body 113 may include a high refractive index filler such as TiO ₂ and SiO ₂ .

The first frame 111 and the second frame 112 may be provided as conductive frames. The first frame 111 and the second frame 112 may stably provide structural strength of the package body 110 and may be electrically connected to the light emitting device 120 . When the first frame 111 and the second frame 112 are conductive frames, they may be defined as lead frames, and may dissipate heat generated from the light emitting device 120 or reflect light.

As another example, the first frame 111 and the second frame 112 may be provided as insulating frames. When the first frame 111 and the second frame 112 are insulating frames, structural strength of the package body 110 can be stably provided. When the first frame 111 and the second frame 112 are insulating frames, the body 113 and the frames 111 and 112 may be integrally formed of the same material or may be made of different materials. The difference between the case where the first frame 111 and the second frame 112 are formed of an insulating frame and a case where they are formed of a conductive frame will be further described later.

When the first and second frames 111 and 112 are conductive, a metal such as platinum (Pt), titanium (Ti), nickel (Ni), copper (Cu), gold (Au), tantalum (Ta), aluminum It may include at least one of (Al) and silver (Ag), and may be formed as a single layer or as a multilayer having different metal layers.

When the first and second frames 111 and 112 are made of an insulating material, they may be made of a resin material or an insulating material, for example, polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), PA9T (Polyamide9T), silicone, epoxy molding compound (EMC: Epoxy molding compound), silicon molding compound (SMC), ceramic, PSG (photo sensitive glass), sapphire (Al ₂ O ₃ ), and the like selected from the group containing at least one can be formed In addition, the first and second frames 111 and 112 may include a high refractive index filler such as TiO ₂ and SiO ₂ in an epoxy material. The first and second frames 111 and 112 may be made of a reflective resin material.

As shown in FIGS. 1 and 2 , the first frame 111 may protrude outward more than the first side of the package body 110 . The second frame 112 may protrude outward more than the second side opposite to the first side of the package body 110 .

<Light-emitting element 120>

According to an embodiment, the light emitting device 120 may include a plurality of bonding pads 121 and 122 and a light emitting part 123 having a semiconductor layer. One or a plurality of the light emitting devices 120 may be disposed on the first and second frames 111 and 112 .

The semiconductor layer of the light emitting unit 123 may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The first bonding pad 121 may be electrically connected to the first conductive semiconductor layer. Also, the second bonding pad 122 may be electrically connected to the second conductive semiconductor layer.

According to the embodiment, the semiconductor layer of the light emitting part 123 may be provided with a compound semiconductor. The semiconductor layer may be provided with, for example, a Group 2-6 or Group 3-5 compound semiconductor. For example, the semiconductor layer may include at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). . The semiconductor layer may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

The first and second conductivity-type semiconductor layers may be implemented with at least one of group 3-5 or group 2-6 compound semiconductors. The first and second conductive semiconductor layers are formed of, for example, a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It can be. For example, the first and second conductivity type semiconductor layers may include at least one selected from a group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. . The first conductivity-type semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductivity-type semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The active layer may be implemented as a compound semiconductor. For example, the active layer may be implemented with at least one of Group 3-5 or Group 2-6 compound semiconductors. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers alternately disposed, In _x Al _y Ga _1-xy N (0≤x≤1, 0 ≤y≤1, 0≤x+y≤1) may be arranged as a semiconductor material having a composition formula. For example, the active layer is selected from a group including InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, and InP/GaAs. may contain at least one.

The light emitting device 120 may be disposed on the package body 110 . The light emitting device 120 may be disposed on the first frame 111 and the second frame 112 . The light emitting device 120 may overlap the first frame 111 and the second frame 112 in a vertical direction, for example, in a Z-axis direction. The light emitting device 120 may be disposed in the cavity (C).

The bonding pads 121 and 122 of the light emitting element 120 may be spaced apart from each other below the light emitting part 123 . The bonding pads 121 and 122 may face the frames 111 and 112 in a vertical direction. A first bonding pad 121 may be disposed on the first frame 111 . A second bonding pad 122 may be disposed on the second frame 112 . The first bonding pad 121 may face the first frame 111 , and the second bonding pad 122 may face the second frame 112 . The first bonding pad 121 and the second bonding pad 122 may be spaced apart from each other on the lower surface of the light emitting device 120 .

The first bonding pad 121 may be disposed between the semiconductor layer of the light emitting part 123 and the first frame 111 . The second bonding pad 122 may be disposed between the semiconductor layer of the light emitting part 123 and the second frame 112 . The first bonding pad 121 may be disposed between the first conductive type semiconductor layer and the first frame 111 . The second bonding pad 122 may be disposed between the second conductive semiconductor layer and the second frame 112 .

The first bonding pad 121 and the second bonding pad 122 are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au , Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO using one or more materials or alloys selected from the group consisting of a single layer or It can be formed in multiple layers.

<Body openings (TH1, TH2)>

Meanwhile, the light emitting device package 100 according to the embodiment may include at least two openings, for example, a first opening TH1 and a second opening TH2, as shown in FIGS. 2 to 5 . The first frame 111 may include the first opening TH1. The second frame 112 may include the second opening TH2.

One or a plurality of first openings TH1 may be provided in the first frame 111 . The first opening TH1 may be provided through the first frame 111 . The first opening TH1 may pass through the upper and lower surfaces of the first frame 111 in the Z direction.

The first opening TH1 may be disposed below the first bonding pad 121 of the light emitting device 120 . The first opening TH1 may overlap the first bonding pad 121 of the light emitting device 120 in the Z direction. The first opening TH1 may overlap the first bonding pad 121 of the light emitting device 120 in the Z direction from the upper surface to the lower surface of the first frame 111 .

One or a plurality of second openings TH2 may be provided in the second frame 112 . The second opening TH2 may be provided through the second frame 112 . The second opening TH2 may pass through the top and bottom surfaces of the second frame 112 in the Z direction.

The second opening TH2 may be disposed under the second bonding pad 122 of the light emitting device 120 . The second opening TH2 may overlap with the second bonding pad 122 of the light emitting device 120 . The second opening TH2 may overlap the second bonding pad 122 of the light emitting device 120 in a direction from the upper surface to the lower surface of the second frame 112 .

The first opening TH1 and the second opening TH2 may be spaced apart from each other. The first opening TH1 and the second opening TH2 may be spaced apart from each other under the lower surface of the light emitting device 120 . The first opening TH1 and the second opening TH2 may overlap the light emitting element 120 in the Z-axis direction. The first opening TH1 and the second opening TH2 may be disposed in an area overlapping the light emitting device 120 and may be spaced apart from the body 113 .

According to the embodiment, as shown in FIGS. 3 and 8 , the width W2 of the upper region of the first opening TH1 in the X direction is smaller than or equal to the width W1 of the first bonding pad 121 . can be provided. In addition, a width of an upper region of the second opening TH2 in the X direction may be smaller than or equal to the width of the second bonding pad 122 . Widths of the first and second openings TH1 and TH2 in the X direction may be the same as or different from each other. Widths of the first and second bonding pads 121 and 122 in the X direction may be the same as or different from each other.

According to the embodiment, as shown in FIGS. 4 and 8 , the length W12 of the upper region of the first opening TH1 in the Y direction is smaller than or equal to the length W11 of the first bonding pad 121 . can be provided. As shown in FIG. 5 , the length W13 of the upper region of the second opening TH2 in the Y direction may be less than or equal to the length W14 of the second bonding pad 122 . Lengths W2 and W5 of the first and second openings TH1 and TH2 in the Y direction may be different or the same. Lengths W1 and W6 of the first and second bonding pads 121 and 122 in the Y direction may be different from or identical to each other. Here, when the lengths of the bonding pads 121 and 122 are W13 Cheng W11, the lengths of the openings TH1 and TH2 may have a relationship of W12 Cheng W14. An upper area of each of the openings TH1 and TH2 may be 50% or more of a lower surface area of each of the bonding pads 121 and 122, for example, in a range of 50% to 110%. In addition, each of the openings TH1 and TH2 and each of the bonding pads 121 and 122 may have a partially facing region and a non-overlapping region that does not face each other. Accordingly, the first bonding pad 121 of the light emitting device 120 and the first frame 111 may be attached by a material provided by the first opening TH1. Also, the second bonding pad 122 of the light emitting device 120 and the second frame 112 may be attached by a material provided by the first opening TH1.

A distance from an upper region of the second opening TH2 to a side end of the second bonding pad 122 in the X direction may be 40 micrometers or more, for example, 40 to 60 micrometers. When the distance is 40 micrometers or more, a process margin for preventing the second bonding pad 122 from being exposed at the bottom of the second opening TH2 may be secured. In addition, when the distance is 60 micrometers or less, the area of the second bonding pad 122 exposed to the second opening TH2 may be secured, and the second bonding area exposed by the second opening TH2 may be secured. Resistance of the pad 122 can be lowered, so that current can be smoothly injected into the second bonding pad 122 exposed through the second opening TH2 .

8 and 19, the width W2 of the upper region of the first opening TH1 in the X direction is smaller than the width of the lower region of the first opening TH1, or the opening as shown in FIG. 20 ( TH3) can be provided in the same width. In addition, the width of the upper region of the second opening TH2 may be smaller than the width of the lower region of the second opening TH2 or may be provided as an opening TH3 having the same width as shown in FIG. 20 . As shown in FIG. 19 , the circumferential surfaces of the openings TH1 and TH2 may be convex curved surfaces S1 or may be vertical planes S2 as shown in FIG. 20 .

As shown in FIGS. 19, 21, and 22 , the openings TH1 , TH2 , TH3 , and TH5 may be provided in a shape in which a width in an X or Y direction gradually decreases from a lower area to an upper area. The circumferential surfaces S1, S3, and S4 between the upper and lower regions of the first and second openings TH1 and TH2 are a plurality of inclined planes S3 having different inclinations or curved surfaces S1 having curvature. ) or may be curved surfaces S4 having different curvatures. The circumferential surfaces of the openings TH1, TH2, TH3, TH4, and TH5 may have at least one of a flat surface, an inclined surface, or a curved surface, and when the frame 111 or 112 is made of an insulating material, as shown in FIGS. 19 and 20 It may be provided with a material, and in the case of a conductive material, it may be provided with a structure as shown in FIGS. 19 to 22.

The distance between the first opening TH1 and the second opening TH2 in the lower surface area of the first frame 111 and the second frame 112 is, for example, 100 micrometers or more, for example, 100 micrometers or more. Available in 150 micrometers. The distance between the openings TH1 and TH2 may be a minimum distance to prevent an electrical short between electrodes when the light emitting device package 100 is mounted on a circuit board or a submount. .

<Adhesive (130)>

As shown in FIGS. 3 to 5 , the light emitting device package 100 according to the embodiment may include an adhesive 130 . The adhesive 130 may be disposed between the body 113 and the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120 . The adhesive 130 may overlap the light emitting device 120 in a Z-axis direction that is perpendicular to the light emitting device 120 . The adhesive 130 may adhere to the light emitting device 120 and the body 113 . The adhesive 130 may be disposed between the first bonding pad 121 and the second bonding pad 122 of the light emitting device 120 or may contact the first and second bonding pads 121 and 122 .

<Recess (R) of the body>

The light emitting device package 100 according to the embodiment may include a recess R as shown in FIGS. 1 and 2 to 5 . The recess R may be provided on the body 113 or an upper portion of the body 113 . The recess R may be provided between the first opening TH1 and the second opening TH2. The recess R may be provided concavely in a direction from the upper surface of the body 113 to the lower surface. One or a plurality of the recesses R may be disposed under the light emitting device 120 . The recess R may overlap with the light emitting device 120 in the Z direction. The adhesive 130 may be disposed in the recess R, for example. The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113 . For example, the adhesive 130 may be placed in direct contact with the upper surface of the body 113 . In addition, the adhesive 130 may be placed in direct contact with the lower surface of the light emitting device 120 .

For example, the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. . Also, as an example, when the adhesive 130 includes a reflective function, the adhesive may include white silicone.

The adhesive 130 may provide a stable fixing force between the body 113 and the light emitting element 120, and when light is emitted to the lower surface of the light emitting element 120, the light emitting element 120 and the light emitting element 120 A light diffusing function may be provided between the bodies 113 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the adhesive 130 provides a light diffusing function, thereby improving the light extraction efficiency of the light emitting device package 100. In addition, the adhesive 130 may reflect light emitted from the light emitting device 120 . When the adhesive 130 includes a reflective function, the adhesive 130 may be made of a material including TiO ₂ , Silicone, and the like.

3 , according to the embodiment, the depth T1 of the recess R is smaller than the depth T2 of the first opening TH1 or the depth T2 of the second opening TH2. can be provided. The depth T1 of the recess R may be determined in consideration of the adhesive strength of the adhesive 130 . In addition, the depth T1 of the recess R considers the stable strength of the body 113 and/or cracks the light emitting device package 100 by heat emitted from the light emitting device 120. ) can be determined so that it does not occur.

The recess R may provide an appropriate space in which a kind of underfill process can be performed under the light emitting device 120 . Here, the under fill process may be a process of mounting the light emitting device 120 on the package body 110 and then disposing the adhesive 130 under the light emitting device 120, and the light emitting device ( 120) to the package body 110 may be a process of disposing the light emitting element 120 after disposing the adhesive 130 in the recess R in order to mount it through the adhesive 130. there is. The recess R may be provided with a first depth or more so that the adhesive 130 can be sufficiently provided between the lower surface of the light emitting device 120 and the upper surface of the body 113 . In addition, the recess R may be provided with a second depth or less to provide stable strength of the body 113 .

The depth T1 of the recess R and the width W4 in the X direction may affect the formation position and fixing force of the adhesive 130 . The depth T1 and width W4 of the recess R may be determined so that sufficient fixing force can be provided by the adhesive 130 disposed between the body 113 and the light emitting element 120. . For example, the depth T1 of the recess R may be provided in a range of 40 micrometers or more, for example, 40 to 60 micrometers.

A width W4 of the recess R may be narrower than a distance between the first bonding pad 121 and the second bonding pad 122 in the X direction of the light emitting device 120, and may be 140 microseconds. meters or larger, such as in the range of 140 to 160 micrometers. The length of the recess R in the Y direction may be larger or smaller than the length of the light emitting device 120 in the Y direction, thereby guiding the formation of the adhesive 130 and strengthening the adhesive force in the Y direction.

A depth T2 of the first opening TH1 may be the same as a thickness of the first frame 111 . The depth T2 of the first opening TH1 may be provided with a thickness capable of maintaining stable strength of the first frame 111 . A depth T2 of the second opening TH2 may be equal to a thickness of the second frame 112 . The depth T2 of the second opening TH2 may be provided with a thickness capable of maintaining stable strength of the second frame 112 .

The depth T2 of the first opening TH1 and the depth T2 of the second opening TH2 may be equal to the thickness of the body 113 . The depth T2 of the first opening TH1 and the depth T2 of the second opening TH2 may be provided with a thickness capable of maintaining stable strength of the body 113 . For example, the depth T2 of the first opening TH1 may be provided in a range of 180 micrometers or more, for example, 180 to 220 micrometers. For example, the thickness difference between the depths T2 - T1 may be selected to be at least 100 micrometers or more. This is in consideration of the thickness of the injection process capable of providing the body 113 without cracks.

According to an embodiment, the ratio (T2/T1) of the T1 depth to the T2 depth may be provided as 2 to 10. For example, if the depth of T2 is provided as 200 micrometers, the depth of T1 may be provided as 20 micrometers to 100 micrometers.

<Molding unit 140>

The light emitting device package 100 according to the embodiment may include a molding part 140 as shown in FIGS. 1 and 2 to 5 . The molding part 140 may be provided on the light emitting device 120 . The molding part 140 may be disposed on the first frame 111 and the second frame 112 . The molding part 140 may be disposed in the cavity C provided by the package body 110 .

The molding part 140 may include an insulating material. In addition, the molding part 140 may include a wavelength conversion means for receiving light emitted from the light emitting device 120 and providing wavelength-converted light. For example, the molding part 140 may be formed of at least one material selected from a group including phosphors and quantum dots. The light emitting device 120 may emit blue, green, red, white, infrared or ultraviolet light. The phosphor or quantum dot may emit blue, green, or red light. The molding part 140 may not be formed.

<Conductive layer (321, 322)>

As shown in FIGS. 3 to 5 , the light emitting device package 100 according to the embodiment may include a first conductive layer 321 and a second conductive layer 322 . The first conductive layer 321 may be spaced apart from the second conductive layer 322 .

The first conductive layer 321 may be provided in the first opening TH1. The first conductive layer 321 may be disposed under the first bonding pad 121 . The width and length of the first conductive layer 321 in the X and Y directions may be smaller than those of the first bonding pad 121 .

The first bonding pad 121 may have a width in an X direction perpendicular to a Z direction in which the first opening TH1 is formed. A width of the first bonding pad 121 may be greater than a width W2 of the first opening TH1 in the X direction.

The first conductive layer 321 may be disposed in direct contact with the lower surface of the first bonding pad 121 . The first conductive layer 321 may be electrically connected to the first bonding pad 121 . The first frame 111 may be disposed around the first conductive layer 321 .

The second conductive layer 322 may be provided in the second opening TH2. The second conductive layer 322 may be disposed under the second bonding pad 122 . The width and length of the second conductive layer 322 in the X and Y directions may be smaller than those of the second bonding pad 122 . The second bonding pad 122 may have a width W13 in the X direction perpendicular to the Z direction in which the second opening TH2 is formed. A width W13 of the second bonding pad 122 in the X direction may be greater than a width W14 of the second opening TH2 in the X direction.

The second conductive layer 322 may be disposed in direct contact with the lower surface of the second bonding pad 122 . The second conductive layer 322 may be electrically connected to the second bonding pad 122 . The second frame 112 may be disposed around the second conductive layer 322 .

The first conductive layer 321 and the second conductive layer 322 are a material selected from a group including Ag, Au, Pt, Sn, Cu, Zn, In, Bi, contact, Ti, or the like, or an alloy thereof. can include A material capable of securing a conductive function may be used as the first conductive layer 321 and the second conductive layer 322 . The first and second conductive layers 321 and 322 are solder paste and may be formed by mixing powder particles or particle particles and flux. The solder paste may include Sn-Ag-Cu, and the weight % of each metal may vary.

For example, the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, and the like, and may be composed of multiple layers composed of different materials or multiple layers or single layers composed of alloys.

In the light emitting device package 100 according to the embodiment, power is connected to the first bonding pad 121 through the first conductive layer 321 of the first opening TH1, and Power may be connected to the second bonding pad 122 through the second conductive layer 322 . When the first and second frames 111 and 112 are made of a conductive material, the first and second frames 111 and 112 may be electrically connected to the bonding pads 121 and 122 of the light emitting device 120 . The electrodes 121 and 122 of the light emitting element 120 may be electrically connected to at least one or all of the first and second conductive layers 321 and 322 and the frames 111 and 112 . Accordingly, the light emitting element 120 can be driven by driving power supplied through the first bonding pad 121 and the second bonding pad 122 . In addition, light emitted from the light emitting device 120 may be provided in an upper direction of the package body 110 .

<Lower Recess (R10, R20)>

Also, the light emitting device package 100 according to the embodiment may include a first lower recess R10 and a second lower recess R20 as shown in FIGS. 1 to 3 . The first lower recess R10 and the second lower recess R20 may be spaced apart from each other.

The first lower recess R10 may be provided on a lower surface of the first frame 111 . The first lower recess R10 may be provided to be concave from the lower surface of the first frame 111 toward the upper surface. The first lower recess R10 may be spaced apart from the first opening TH1. A resin part may be provided in the first lower recess R10. The resin part filled in the first lower recess R10 may be provided with the same material as the body 113, for example. The resin part may be provided by being selected from materials having poor adhesion and wettability with the first and second conductive layers 321 and 322 . Alternatively, the resin part may be provided by being selected from materials having low surface tension with the first and second conductive layers 321 and 322 . For example, the resin part filled in the first lower recess R10 may be provided in a process in which the first frame 111, the second frame 112, and the body 113 are formed through an injection process or the like. can

The resin portion filled in the first lower recess R10 may be disposed around a lower surface area of the first frame 111 providing the first opening TH1 . An area of the lower surface of the first frame 111 providing the first opening TH1 may be disposed separately from the lower surface forming the surrounding first frame 111 in a kind of island shape. For example, as shown in FIG. 2 , the lower surface area of the first frame 111 providing the first opening TH1 includes a resin part filled in the first lower recess R10 and the body 113 ), it can be isolated from the surrounding first frame 111.

Therefore, the resin part is made of a material having poor adhesion or wettability with the first and second conductive layers 321 and 322 or a material having low surface tension between the resin part and the first and second conductive layers 321 and 322. When disposed, the first and second conductive layers 321 and 322 provided in the first and second openings TH1 and TH2 deviate from the first and second openings TH1 and TH2, and the first and second lower portions Diffusion beyond the resin part filled in the recesses R10 and R20 or the body 113 can be prevented. This is because the adhesive relationship between the first and second conductive layers 321 and 322 and the resin part and the body 113 or the wettability and surface tension between the resin part and the first and second conductive layers 321 and 322 are poor. It uses what is not. That is, the materials constituting the first and second conductive layers 321 and 322 may be selected to have good adhesion properties with the first and second frames 111 and 112 . In addition, materials constituting the first and second conductive layers 321 and 322 may be selected to have poor adhesion properties with the resin part and the body 113 .

Accordingly, the first conductive layer 321 overflows from the first opening TH1 in the direction of the area where the resin part or the body 113 is provided, outside the area where the resin part or the body 113 is provided. is prevented from overflowing or spreading, and the first conductive layer 321 can be stably disposed in the region provided with the first opening TH1. Therefore, when the first conductive layer 321 disposed in the first opening TH1 overflows, the first conductive layer 321 flows to the outer region of the first lower recess R10 provided with the resin part or the body 113. The expansion of the conductive layer 321 may be prevented. In addition, the first conductive layer 321 can be stably connected to the lower surface of the first bonding pad 121 within the first opening TH1. Therefore, when the light emitting device package is mounted on a circuit board, it is possible to prevent a short circuit problem in which the first conductive layer 321 and the second conductive layer 322 come into contact with each other, and the first and second conductive layers ( In the process of disposing the first and second conductive layers 321 and 322 , it may be very easy to control the amounts of the first and second conductive layers 321 and 322 .

The first conductive layer 321 may be disposed to extend from the first opening TH1 to the first lower recess R10. Accordingly, the first conductive layer 321 and/or the resin part may be disposed in the first lower recess R10 . The second lower recess R20 may be provided on a lower surface of the second frame 112 . The second lower recess R20 may be provided to be concave from the lower surface of the second frame 112 toward the upper surface. The second lower recess R20 may be spaced apart from the second opening TH2. For example, the resin part filled in the first and second lower recesses R10 and R20 is formed by the first frame 111, the second frame 112, and the body 113 through an injection process or the like. can be provided in the process.

The resin portion filled in the second lower recess R20 may be disposed around a lower surface area of the second frame 112 providing the second opening TH2 . An area of the lower surface of the second frame 112 providing the second opening TH2 may be disposed separately from the lower surface forming the surrounding second frame 112 in a kind of island shape. For example, as shown in FIG. 2 , the lower surface area of the second frame 112 providing the second opening TH2 includes a resin part filled in the second lower recess R20 and the body 113 ), it can be isolated from the surrounding second frame 112. Accordingly, the second conductive layer 322 overflows from the second opening TH2 in the direction of the area where the resin part or the body 113 is provided, outside the area where the resin part or the body 113 is provided. overflowing or spreading is prevented, and the second conductive layer 322 can be stably disposed in the region provided with the second opening TH2. Therefore, when the second conductive layer 322 disposed in the second opening TH2 overflows, the second conductive layer 322 flows to the outer region of the second lower recess R20 provided with the resin part or the body 113. The expansion of the conductive layer 322 may be prevented. In addition, the second conductive layer 322 can be stably connected to the lower surface of the second bonding pad 122 within the second opening TH2.

Therefore, when the light emitting device package is mounted on a circuit board, it is possible to prevent a short circuit problem in which the first conductive layer 321 and the second conductive layer 322 come into contact with each other, and the first and second conductive layers ( In the process of disposing the first and second conductive layers 321 and 322 , it may be very easy to control the amounts of the first and second conductive layers 321 and 322 .

Also, the second conductive layer 322 may be disposed to extend from the second opening TH2 to the second lower recess R20. Accordingly, the second conductive layer 321 and/or the resin part may be disposed in the second lower recess R20. One or a plurality of the lower recesses R10 and R20 may be disposed in each of the frames 111 and 112 .

<Contact and non-contact areas with the conductive layer in the electrode of the light emitting device>

In the embodiment, when the conductive layers 321 and 322 are filled in the openings TH1 and TH2 and then cured, the bonding pad ( 121,122) is generated. When the conductive layers 321 and 322 attract the bonding pads 121 and 122 of the light emitting element 120, a problem occurs in which the bonding pads 121 and 122 are partially separated from the light emitting part 123, for example, a semiconductor layer. , the electrode contact may be reduced and the power supply efficiency may be lowered. This may cause the interface between the semiconductor layer and the bonding pads 121 and 122 to be separated, and as a result, power supplied to the bonding pads 121 and 122 may not be smoothly supplied to the semiconductor layer, thereby reducing reliability of the device.

In the embodiment, the contact area of the bonding pads 121 and 122 of the light emitting element 120 is dispersed into non-contact areas or partially contacted with the conductive layers 321 and 322, thereby reducing the contact area with the conductive layers 321 and 322. . In this case, since sufficient die shear strength (DST) is secured by the conductive layers 321 and 322 and the adhesive 130, the light emitting element 120 is dispersed or partially contacted with the conductive layers 321 and 322, It is possible to prevent the adhesive force of the light emitting element 120 from falling below a predetermined standard.

In the embodiment, at least one or both of the bonding pads 121 and 122 of the light emitting device 120 may be provided with non-contact regions with the conductive layers 321 and 322 in the openings TH1 and TH2. At least one or both of the bonding pads 121 and 122 may include areas in contact with the conductive layers 321 and 322 and areas not in contact with the openings TH1 and TH2 . For convenience of description below, it is a contact area in contact with the conductive layers 321 and 322, and a non-contact area may be defined as a non-contact area. The contact area may include one or a plurality of areas, and the non-contact area may include one or a plurality of areas. The contact area is a part of lower surface areas of the bonding pads 121 and 122, and the non-contact area may be an open area without the electrode or an area where an insulating material is formed on the surface of the electrode.

Referring to FIGS. 4 , 8 and 9 , the first bonding pad 121 of the light emitting device 120 may include first contact areas 21 and 22 and first non-contact areas 23 . The first contact areas 21 and 22 may be separated into one or a plurality of areas, and the plurality of first contact areas 21 and 22 may be connected to each other by a first connection part 24 . The first connection portion 24 may contact or not contact the conductive layers 321 and 322 . The first connection portion 24 connects power between the plurality of first contact areas 21 and 22, so that even if some areas have low contact with the conductive layers 321 and 322, the first connection portion 24 Power can be delivered to other areas through The first non-contact area 23 may be an empty area or filled with a resin part.

In the first bonding pad 121 , the first non-contact area 23 may be adjacent to the first contact areas 21 and 22 or disposed between the first contact areas 21 and 22 . An area of the first non-contact area 23 may be smaller than an area of an upper surface of the first opening TH1. The first non-contact area 23 may be smaller than or equal to the width W11 in the X direction or the length W1 in the Y direction of the first bonding pad 121 . One or a plurality of first non-contact areas 23 may be disposed among areas overlapping the first opening TH1.

Referring to FIG. 8 , the width W12 in the X direction of the first opening TH1 may be smaller than or equal to the length W2 in the Y direction. The width W14 in the X direction of the second opening TH2 may be smaller than or equal to the length W6 in the Y direction. An area of a virtual line connecting the outer edges of the first bonding pad 121 may be larger than an area of the top surface of the first opening TH1. An area of a virtual line connecting the outer edges of the second bonding pad 122 may be greater than an area of a top surface of the second opening TH2 . The upper surface area of the first bonding pad 121 may be smaller than or equal to the upper surface area of the second bonding pad 122, but is not limited thereto.

The second bonding pad 122 of the light emitting device 120 may include second contact areas 31 and 32 and a second non-contact area 33 . The second non-contact area 33 may be an empty area or filled with a resin part. The second contact areas 31 and 32 may be separated into one or a plurality of areas, and the plurality of second contact areas 31 and 32 may be connected to each other by a second connection part 34 . The second connection portion 34 may contact or not contact the conductive layers 321 and 322 . The second connection part 34 connects power between the plurality of second contact areas 31 and 32, so even if some areas have low contact with the conductive layers 321 and 322, the second connection part 34 Power can be delivered to other areas through

In the second bonding pad 122 , the second non-contact area 33 may be adjacent to the second contact areas 31 and 32 or disposed between the second contact areas 31 and 32 . An area of the second non-contact area 33 may be smaller than an area of an upper surface of the second opening TH2. The second non-contact area 33 may be smaller than or equal to the width W13 in the X direction or the length W6 in the Y direction of the second bonding pad 122 . One or a plurality of the second non-contact areas 33 may be disposed among areas overlapping the second opening TH2.

Referring to FIG. 8 , the width W12 in the X direction of the first opening TH1 may be smaller than or equal to the length W2 in the Y direction. The width W14 in the X direction of the second opening TH2 may be smaller than or equal to the length W6 in the Y direction. Here, it may have a relationship of W12 < W11 and W14 < W13 in the X direction, and may have a relationship of W2 < W1 and W5 < W6 in the Y direction. Accordingly, the contact regions 21, 22 and 31, 32 of the conductive layers 321 and 322 and the electrodes 121 and 122 can be dispersed through the first and second openings TH1 and TH2, thereby forming bonding pads 121 and 122. The transmitted external force can be dispersed.

Here, as shown in FIG. 4 , the first bonding pad 121 is in contact with the first conductive layer 321 whose first contact areas 21 and 22 fill the first opening TH1 , The contact area 33 may overlap the first opening TH1 and the first conductive layer 321 in the Z direction. Since the first non-contact area 33 corresponds to the first conductive layer 321 , the first contact areas 21 and 22 may be separated from the first conductive layer 321 . An upper surface of the first conductive layer 321 corresponding to the first non-contact area 23 may have a concave curved surface C1. The first non-contact area 33 may be disposed between the first contact areas 21 and 22 in the Y direction, or disposed adjacent to the center of the light emitting device 120 rather than an edge portion in the Y direction.

As shown in FIG. 5 , the second bonding pad 122 has second contact areas 31 and 32 in contact with the second conductive layer 322 filled in the first opening TH1, and the second non-contact area. Region 33 may overlap the second opening TH2 and the second conductive layer 322 in the Z direction. Since the second non-contact area 33 corresponds to the second conductive layer 322 , the second contact areas 31 and 32 may be separated from the second conductive layer 322 . An upper surface of the second conductive layer 322 corresponding to the second non-contact area 33 may include a concave curved surface C1. The second non-contact area 33 may be disposed between the second contact areas 31 and 32 in the Y direction, or disposed adjacent to the center of the light emitting device 120 rather than an edge portion in the Y direction.

At least one of the adhesive 130 and the resin part 135 shown in FIG. 23 may be disposed outside the first and second non-contact areas 23 and 33 of the first and second bonding pads 121 and 122, The flow of the conductive layer can be blocked.

A contact area between the conductive layers 321 and 322 and the bonding pads 121 and 122 may be smaller than the top surface area of each of the openings TH1 and TH2 due to the non-contact area. Each contact area of the bonding pads 121 and 122 may have a circular shape, a polygonal shape, an elliptical shape, or a curved or straight line. The non-contact area of each of the bonding pads 121 and 122 is open in a downward direction and may be open in at least one of an X direction, a Y direction, and a diagonal direction, and the bottom view shape is circular, polygonal, elliptical, or irregular. may contain shapes.

8 and 9 , when the first and second conductive layers 321 and 322 come into contact with the first and second contact regions 21, 22, 31 and 32 of the bonding pads 121 and 122, the first and second conductive layers 321 and 322 are in contact with each other. , The area of the second contact area 21, 22, 31, 32 is the area of the portion 20, 30 overlapping the first and second openings TH1, TH2, and the first and second conductive layers 321 and 322 It may be larger than the area of the particle 320 or powder (hereinafter described as a particle) constituting the . The particle 320 may have a size of 10 micrometers or more, for example, a range of 10 to 40 micrometers or a range of 20 to 40 micrometers. If the material of the particles 320 is out of the above range, printability and wettability of the solder paste filled in the openings TH1 and TH2 may be deteriorated, so that a high degree of reliability cannot be maintained.

The area of the portions 20 and 30 overlapping the first and second openings TH1 and TH2 in the first and second contact regions 21, 22, 31, and 32 of the bonding pads 121 and 122 is the particle 320 ) may be more than twice the area of . For example, when the radius of the particle 320 is r, the minimum area of each contact region 21, 22, 32, 33 in contact with the first and second conductive layers 321 and 322 is obtained as π×r ² The area of the particle may be twice or more, for example, an area of n×π×r ² or more, and may be more than n≥2. Since the first and second contact areas 21, 22, 31, and 32 of the first and second bonding pads 121 and 122 are provided at least twice the area of the particle 320, the printability of the solder paste, The wettability can be improved and a high degree of reliability can be maintained.

A minimum area overlapping the first and second openings TH1 and TH2 in the first and second non-contact regions 23 and 33 of the bonding pads 121 and 122 may be 1.5 times or more the size of the particle 320. there is. For example, when the radius of the particle 320 is r, the minimum area of the non-contact areas 23 and 33 that are not in contact with the first and second conductive layers 321 and 322, respectively, is the area obtained by π×r ² It can be 1.5 times or more. Since the first and second non-contact areas 23 and 33 of the first and second bonding pads 121 and 122 are provided at least 1.5 times the area of the particle 320, the first and second conductive layers 321 and 322 ) can reduce the area in contact with the bonding pads 121 and 122 on the openings TH1 and TH2, and can distribute the force pulling each of the bonding pads 121 and 122, resulting in poor contact between the bonding pads 121 and 122. and improve reliability.

As shown in FIG. 8 , when the non-contact areas 23 and 33 are formed in the X direction of the bonding pads 121 and 122, the widths W31, W41 and W42 of the contact areas 21, 22, 31 and 32 in the Y direction are It may be twice or more than twice the diameter of the particle, for example, it may be in the range of 2 to 4 times. The widths W31, W41, and W42 may be formed in a range of 40 micrometers or more, for example, 40 to 100 micrometers. Widths W32 and W43 of the non-contact areas 23 and 33 in the Y direction may be 1.5 times or more than the diameter of the particle diameter. The Y-direction widths W32 and W43 of the non-contact areas 23 and 33 may be formed in a range of 30 micrometers or more, for example, 30 micrometers to 80 micrometers. The X-direction width of the non-contact areas 23 and 33 may be equal to or greater than the Y-direction widths W32 and W43. When the contact areas 21, 22, 31, 32 and the non-contact areas 23, 33 of the bonding pads 121 and 122 have the above widths, each contact area 21, 22, 31, 32 has the above width. The force pulling the bonding pads 121 and 122 can be dispersed, reducing defects of the bonding pads 121 and 122 and improving reliability.

As shown in FIG. 6 , a protective layer 129 may be disposed around the first bonding pad 121 . The protective layer 129 may expose a region that does not cover the bottom surface of the first bonding pad 121 , for example, a region facing the first frame 111 . The protective layer 129 may have a thickness smaller than that of the first bonding pad 121 and support and protect the first bonding pad 121 . The adhesive forces F1 and F2 between the first conductive layer 321 and the first bonding pad 121 may be distributed within the first opening TH1. The non-contact area 23 of the first bonding pad 121 may be disposed on the protective layer 129 and face the conductive layers 321 and 322 . The second bonding pad 122 and the protective layer 129 disposed around the second bonding pad 122 may have the same configuration as the above, and the above description will be referred to.

As shown in FIG. 7 , a protective layer 129 may be disposed around the first bonding pad 121 . The protective layer 129 may cover an outer circumference of the bottom surface of the first bonding pad 121 and expose an inner region of the bottom surface of the first bonding pad 121 . When the first conductive layer 321 contacts the bottom surface of the first bonding pad 121 , the protective layer 129 may support the first bonding pad 121 . Here, the protective layer 129 may partially contact or non-contact with the first conductive layer 321 , or may include a contacted portion and a non-contacted portion. The adhesive forces F1 and F2 between the first conductive layer 321 and the first bonding pad 121 may be distributed within the first opening TH1. The area of the non-contact region 23 can be adjusted by the protective layer 129 disposed on the first bonding pad 121 . The non-contact area 23 of the first bonding pad 121 may be disposed on the protective layer 29 and face the first conductive layer 321 . For the second bonding pad 122 and the protective layer 129 disposed around the second bonding pad 122, the above description will be referred to, and the above description will be referred to.

As shown in FIGS. 4 and 5 , when the first and second openings TH1 and TH2 are filled with the conductive layers 321 and 322 , the filled conductive layers 321 and 322 form contact areas 21 and 22 of the bonding pads 121 and 122 . , 31 , 32 ) and may leak through the non-contact areas 23 , 33 in the lateral direction. For example, as shown in FIG. 8 , the conductive layers 321 and 322 may flow out in lateral directions F3 and F4 in which the non-contact regions 23 and 33 of the bonding pads 121 and 122 are open. At this time, as shown in FIG. 3 , the adhesive 130 is brought into contact between the light emitting device 120 and the body 113 to prevent the conductive layers 321 and 322 from leaking in the direction of the adhesive 130 .

As shown in FIG. 8 , the connection parts 124 and 134 of the bonding pads 121 and 122 are adjacent to the frames 111 and 112 or adhered to the conductive layers 321 and 322 to prevent the conductive layers 321 and 322 from flowing out as shown in FIG. 3 . there is.

10 shows another example of the opening and the electrode, and the Y-direction length W2 of the first opening TH1 may be greater than the Y-direction length W1 of the first bonding pad 121 . The Y-direction length W5 of the second opening TH2 may be greater than the Y-direction length W6 of the second bonding pad 122 . This means that the Y-direction lengths W1 and W5 of at least one of the first and second bonding pads 121 and 122 may be smaller than the Y-direction lengths W2 and W6 of at least one of the first and second openings TH1 and TH2. there is. In this case, non-contact areas of the bonding pads 121 and 122 may be further increased.

As shown in FIG. 11, at least one of the plurality of electrodes 121 has an inner contact area 21A and an outer contact area 21B, and the inner contact area 21A and the outer contact area 21B A non-contact area 23 may be disposed between them. The non-contact area 23 may separate the inner and outer contact areas 21A and 21B. When the bonding pads 121 are separated into internal and external contact areas 21A and 21B, they may be connected to each other in a different pattern. The electrode may be applied to the first and second electrodes as shown in FIG. 12 .

As shown in FIG. 12 , the first bonding pad 121 may have a non-contact area 123 disposed between the inner and outer contact areas 121A and 121B. In this case, the external contact area 121B may be electrically connected to the frame 111 . In the second bonding pad 122 , a non-contact area 33 may be disposed between the inner and outer contact areas 31A and 32A, and may be electrically connected to the frame 122 . In this case, the contact areas 121A, 122A, 131A, and 132A of the first and second bonding pads 121 and 122 may be larger in contact area with the frame 111 and 112 than in contact with the conductive layers 321 and 322 . Accordingly, even if the contact areas 121A, 122A, 131A, and 132A of the respective bonding pads 121 and 122 are separated, deterioration in electrical characteristics can be prevented and force pulling the electrodes can be reduced. The width of the outer contact areas 21B and 32A may be twice or more than the diameter of the pipe, so that they may be stably connected to the frames 111 and 112.

The top surface area of the first bonding pad 121 may be equal to or smaller than the top surface area of the second bonding pad 122 . A top surface area of the first opening TH1 may be equal to or smaller than a top surface area of the second opening TH2 .

Referring to FIG. 13 , at least one of the plurality of electrodes may be connected to a plurality of contact regions 21A and 21B through a connection part 24 . The location of the connecting portion 24 may be a center location of the plurality of contact areas 21A and 21B, but is not limited thereto. The connecting portion 24 may extend in a vertical or inclined direction with respect to each of the contact areas 21A and 21B, but is not limited thereto. The connecting portion 24 may be one or plural. The connection part 24 may be a region in contact with the conductive layers 321 and 322 . The shape of the electrode may be applied as shown in FIG. 14 .

Referring to FIG. 14 , the first bonding pad 121 may include a connection portion 24 between the plurality of contact areas 21A and 21B, and non-contact areas 23 on both sides of the connection portion 24. there is. The first bonding pad 121 may come into contact with the conductive layer by connecting the connection portion 24 between the plurality of contact regions 21A and 21B. The non-contact area 23 of the first bonding pad 121 may be separated into both sides by the connection part 24 . The minimum width of the connecting portion 24 may be larger or smaller than the particle diameter, but is not limited thereto. The first bonding pad 121 may have connection portions 24 disposed between the plurality of contact regions 21A and 21B, respectively, and may come into contact with the conductive layer. The first bonding pad 121 may have a width in the X direction and a length in the Y direction greater than those of the opening.

The second bonding pad 122 may include a connection portion 34 between the plurality of contact areas 31A and 31B, and non-contact areas 33 on both sides of the connection portion 34 . In the second bonding pad 122 , connection portions 34 are disposed between the plurality of contact regions 31A and 31B, respectively, and may be in contact with the conductive layer. The second bonding pad 122 may have a width in the X direction and a length in the Y direction greater than those of the opening.

The top surface area of the first bonding pad 121 may be equal to or smaller than the top surface area of the second bonding pad 122 . A top surface area of the first opening TH1 may be equal to or smaller than a top surface area of the second opening TH2 .

15 to 18 are modified examples of an electrode according to an embodiment.

As shown in FIG. 15 , the bonding pads 121 and 122 may have an internal contact area 25 and an external contact area 26 connected in a diagonal direction by a connecting portion 27 . In the external contact area 26 , two or more non-contact areas 28 may be disposed by a connection part 27 . The minimum width of the non-contact area 28 may be 1.5 times or more of the particle diameter, and the minimum width of the contact areas 25 and 26 may be 2 times or more of the particle diameter. Due to the dispersed contact areas 25 and 26, printability and wettability of the solder paste, which is a conductive layer, can be improved and high reliability can be maintained. The inner and outer contact areas 25 and 26 may have a circular shape or a polygonal shape.

As shown in FIG. 16 , the plurality of contact areas 35 and 36 of the bonding pads 121 and 122 may be disposed at the corners of the polygonal shape, and each contact area 35 and 36 may be connected to each other through a connection part 37 . Each of the contact areas 35 and 36 may have a circular shape, a polygonal shape, or an elliptical shape. Each of the contact areas 35 and 36 may include a curved shape or a straight line shape. A non-contact area 37 may be provided between each of the contact areas 35 and 36 . The minimum width of the non-contact area 37 may be 1.5 times or more of the particle diameter, and the minimum width of the contact areas 35 and 36 may be 2 times or more of the particle diameter. Printability and wettability of the solder paste, which are the conductive layers 321 and 322, can be improved and high reliability can be maintained.

As shown in FIG. 17 , the plurality of contact areas 41 and 42 of the bonding pads 121 and 122 may be arranged in a matrix form, and the contact areas 41 and 42 may be connected by a connection part 44 . A non-contact area 43 may be provided between each of the contact areas 41 and 42 . Two or more of the non-contact areas 43 may be separated by a connection part 44 . The contact areas 41 and 42 are disposed to surround at least three sides of the non-contact area 43 , and the area of the non-contact area 43 may be smaller than that of the contact areas 41 and 42 .

The minimum width of the non-contact area 43 may be 1.5 times or more of the particle diameter, and the minimum width of the contact areas 41 and 42 may be 2 times or more of the particle diameter. By disposing the contact areas 35 and 36 around the non-contact area 38, printability and wettability of the solder paste can be improved and high reliability can be maintained during bonding with the conductive layer.

As shown in FIG. 18 , a contact area 45 of the bonding pads 121 and 122 may be disposed around the non-contact area 47 . The contact area 45 blocks the circumference of the non-contact area 47 and may be disposed larger than the area of the non-contact area 47 . The minimum width of the non-contact area 47 may be 1.5 times or more of the particle diameter, and the minimum width of the contact area 45 may be 2 times or more of the particle diameter. By disposing the contact area 45 around the non-contact area 47, printability and wettability of the solder paste can be improved and high reliability can be maintained during bonding with the conductive layer.

In an embodiment, the first and second bonding pads 121 and 122 may be connected to the conductive layer through a contact area, and may be separated from the conductive layer on an opening through a non-contact area. The contact area may be electrically connected to the frame through the conductive layer. In this case, the contact area of the first and second bonding pads 121 and 122 may be larger than the contact area with the conductive layer. Accordingly, even if contact regions of the respective electrodes are separated, deterioration in electrical characteristics can be prevented and force pulling the electrodes can be reduced. The width of the external contact area may be twice or more than the diameter of the pipe, so that it can be stably connected to the frame.

As another example, the light emitting device package 100 according to the embodiment may include a resin part 135 as shown in FIG. 23 . The resin part 135 may be disposed between the first frame 111 and the light emitting device 120 . The resin part 135 may be disposed between the second frame 112 and the light emitting element 120 . The resin part 135 may be provided on a bottom surface of the cavity C provided in the package body 110 .

The resin part 135 may be disposed on a side surface of the first bonding pad 121 . The resin part 135 may be disposed on a side surface of the second bonding pad 122 . The resin part 135 may be disposed below the semiconductor layer 123 .

For example, the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. there is. In addition, the resin part 135 may be a reflection part that reflects light emitted from the light emitting element 120, for example, it may be a resin containing a reflective material such as TiO ₂ or white silicone. can include

The resin part 135 may be disposed under the light emitting element 120 to perform a sealing function. In addition, the resin part 135 may improve adhesion between the light emitting device 120 and the first frame 111 . The resin part 135 may improve adhesion between the light emitting device 120 and the second frame 112 .

The resin part 135 may seal around the first bonding pad 121 and the second bonding pad 122 . In the resin part 135, the first conductive layer 321 and the second conductive layer 322 are outside the first opening TH1 area and the second opening TH2 area, and the light emitting element 120 It is possible to prevent diffusion and movement in the direction of the outer surface. When the first and second conductive layers 321 and 322 diffuse and move in the direction of the outer surface of the light emitting device 120, the first and second conductive layers 321 and 322 are active layers of the light emitting device 120 and It can come into contact with it, which can cause defects due to short circuits. Therefore, when the resin part 135 is disposed, a short circuit between the first and second conductive layers 321 and 322 and the active layer can be prevented, thereby improving reliability of the light emitting device package according to the embodiment.

In addition, when the resin part 135 includes a material having a reflective property such as white silicon, the resin part 135 directs the light provided from the light emitting device 120 toward the upper portion of the package body 110. It is possible to improve the light extraction efficiency of the light emitting device package 100 by reflecting the light into the light emitting device package 100 .

On the other hand, according to another example of the light emitting device package according to the embodiment of the present invention, the resin part 135 is not provided separately, and the molding part 140 is the first frame 111 and the second frame ( 112) may be arranged to be in direct contact with.

24 is another example of a light emitting device package according to an embodiment.

Referring to FIG. 24 , the light emitting device package may include a first upper recess R3 on the first frame 111 and a second upper recess R4 on the second frame 112 . The first upper recess R3 may be provided on an upper surface of the first frame 111 . The first upper recess R3 may be provided to be concave from the upper surface to the lower surface of the first frame 111 . The first upper recess R3 may be spaced apart from the first opening TH1. The first upper recess R3 may be provided adjacent to three sides of the first bonding pad 121 in a top view shape. For example, the first upper recess R3 may be provided in a shape surrounding three or more sides of the first bonding pad 121 .

The second upper recess R4 may be provided on an upper surface of the second frame 112 . The second upper recess R4 may be provided to be concave from the upper surface to the lower surface of the second frame 112 . The second upper recess R4 may be spaced apart from the second opening TH2. The second upper recess R4 may be provided adjacent to three sides of the second bonding pad 122 in a top view shape. For example, the second upper recess R4 may be formed along the circumferences of three sides of the second bonding pad 122 .

The resin part 135 may be provided in the first upper recess R3 and the second upper recess R4. The resin part 135 may be disposed on a side surface of the first bonding pad 121 . The resin part 135 may be provided in the first upper recess R3 and may extend to an area where the first bonding pad 121 is disposed. The resin part 135 may be disposed below the semiconductor layer 123 .

A distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 may be less than several hundred micrometers. For example, the distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 may be equal to or smaller than 200 micrometers.

The distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting element 120 is determined by the viscosity of the resin part 135 filled in the first upper recess R3. can be determined by

The distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting element 120 is such that the resin part 135 applied to the first upper recess R3 1 may be selected as a distance that can be formed by extending to the area where the bonding pad 121 is disposed.

Also, the resin part 135 may be disposed on a side surface of the second bonding pad 122 . The resin part 135 may be provided in the second upper recess R4 and may extend to an area where the second bonding pad 122 is disposed. The resin part 135 may be disposed below the semiconductor layer 123 .

In addition, the resin part 135 may also be provided on the side surface of the semiconductor layer 123 . Since the resin part 135 is disposed on the side surface of the semiconductor layer 123 , movement of the first and second conductive layers 321 and 322 to the side surface of the semiconductor layer 123 can be effectively prevented. In addition, when the resin part 135 is disposed on the side surface of the semiconductor layer 123, it may be disposed under the active layer of the semiconductor layer 123, and accordingly, the light extraction efficiency of the light emitting element 120 can improve

The first upper recess R3 and the second upper recess R4 may provide sufficient space for the resin part 135 to be provided. For example, the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. there is. In addition, the resin part 135 may include a reflective material, for example, TiO ₂ and/or may include white silicone including silicone.

The resin part 135 may be disposed under the light emitting element 120 to perform a sealing function. In addition, the resin part 135 may improve adhesion between the light emitting device 120 and the first frame 111 . The resin part 135 may improve adhesion between the light emitting device 120 and the second frame 112 .

The resin part 135 may seal around the first bonding pad 121 and the second bonding pad 122 . In the resin part 135, the first conductive layer 321 and the second conductive layer 322 are outside the first opening TH1 area and the second opening TH2 area, and the light emitting element 120 It can be prevented from spreading and moving in the direction.

When the resin part 135 includes a material having a reflective property such as white silicon, the resin part 135 reflects the light provided from the light emitting device 120 toward the top of the package body 110. Thus, light extraction efficiency of the light emitting device package 100 may be improved.

Meanwhile, in the light emitting device package, the first conductive layer 321 and the second conductive layer 322 are first formed in the opening, and the resin part 135 and the molding part 140 are formed, or the number of The branch portion 135 and the molding portion 140 may be formed first, and the first conductive layer 321 and the second conductive layer 322 may be formed later. Also, according to another example of the light emitting device package manufacturing method according to the embodiment, the resin part 135 may not be formed, and only the molding part 140 may be formed in the cavity of the package body 110 .

The light emitting device package 100 according to the embodiment described above may be supplied mounted on a submount or a circuit board. However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high-temperature process such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in a bonding area between the lead frame provided in the light emitting device package and the light emitting device, so that stability of electrical connection and physical coupling may be weakened. However, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first bonding pad and the second bonding pad of the light emitting device according to the embodiment may receive driving power through the conductive layer disposed in the opening. . Also, the melting point of the conductive layer disposed in the opening may be selected to have a higher melting point than that of a general bonding material.

Therefore, even when the light emitting device device package 100 according to the embodiment is bonded to the main substrate through a reflow process, since a re-melting phenomenon does not occur, electrical connection and physical bonding strength are not deteriorated. There are advantages to not

In addition, according to the light emitting device package 100 according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored due to exposure to high temperatures.

Accordingly, the range of selection for the material constituting the body 113 can be widened. According to the embodiment, the body 113 may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic. For example, the body 113 includes at least one material selected from the group consisting of PolyPhtal Amide (PPA) resin, PolyCyclohexylenedimethylene Terephthalate (PCT) resin, Epoxy Molding Compound (EMC) resin, and Silicone Molding Compound (SMC) resin. can do.

<Light source module>

Referring to FIG. 25 , in the light source module 300 according to the embodiment, one or a plurality of light emitting device packages 100 may be disposed on a circuit board 310 .

The circuit board 310 may include a first pad 311 , a second pad 312 , and a substrate 313 . A power supply circuit for controlling driving of the light emitting device 120 may be provided on the substrate 313 .

Power is supplied to the first bonding pad 121 by being connected to the first pad 311 of the circuit board 310 through the first conductive layer 321 of the first opening TH1 of the light emitting device package 100. Then, the circuit board 310 is connected to the second pad 312 through the second conductive layer 322 of the second opening TH2 so that power can be connected to the second bonding pad 122 . The substrate 313 of the circuit board 310 may be a flexible or non-flexible member.

The package body 110 may be disposed on the circuit board 310 . The first pad 311 and the first bonding pad 121 may be electrically connected. The second pad 312 and the second bonding pad 122 may be electrically connected. The first pad 311 and the second pad 312 may include a conductive material. For example, the first pad 311 and the second pad 312 are selected from a group including Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, and Al. It may include at least one selected material or alloy thereof. The first pad 311 and the second pad 312 may be provided in a single layer or multiple layers.

When the first frame 111 and the second frame 112 are formed of insulating frames, power may be supplied through the first and second conductive layers 321 and 322 . When the first frame 111 and the second frame 112 are formed as conductive frames, power may be supplied through the first and second conductive layers 321 and 322 and the first and second frames 111 and 112.

26 is another example of a light source module having a light emitting device package according to an embodiment.

Referring to FIG. 26 , one or a plurality of light emitting device packages 100 may be disposed on the circuit board 410 . The circuit board 410 may include a first pad 411 , a second pad 412 , and a substrate 413 . A power supply circuit for controlling driving of the light emitting device 120 may be provided on the substrate 313 .

The package body 110 may be disposed on the circuit board 410 . The first pad 411 and the first bonding pad 121 may be electrically connected. The second pad 412 and the second bonding pad 122 may be electrically connected.

According to the embodiment, the first pad 411 of the circuit board 410 and the first conductive layer 321 may be electrically connected. Also, the second pad 412 of the circuit board 410 and the second conductive layer 322 may be electrically connected. The first pad 411 may be electrically connected to the first frame 111 . Also, the second pad 412 may be electrically connected to the second frame 112 . According to the embodiment, a separate bonding layer may be additionally provided between the first pad 411 and the first frame 111 . In addition, a separate bonding layer may be additionally provided between the second pad 412 and the second frame 112 . According to the light emitting device package according to the embodiment, the first bonding pad and the second bonding pad of the light emitting device may receive driving power through the conductive layer disposed in the opening. Also, the melting point of the conductive layer disposed in the opening may be selected to have a higher melting point than that of a general bonding material. The light emitting device device package according to the embodiment has an advantage in that electrical connection and physical bonding force are not deteriorated because a re-melting phenomenon does not occur even when bonded to a main substrate or the like through a reflow process. According to the light emitting device package according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored due to exposure to high temperatures.

The light emitting device package 100 according to the embodiment may be supplied mounted on a submount or a circuit board. However, when a conventional light emitting device package is mounted on a submount or a circuit board, a high-temperature process such as reflow may be applied. At this time, in the reflow process, a re-melting phenomenon occurs in the bonding area between the frame provided in the light emitting device package and the light emitting device, and thus the stability of electrical connection and physical coupling may be weakened. Accordingly, the position of the light emitting device may be weakened. Since may change, optical and electrical characteristics and reliability of the light emitting device package may be deteriorated. However, according to the light emitting device package according to the embodiment, the first bonding pad and the second bonding pad of the light emitting device according to the embodiment may receive driving power through the conductive layer disposed in the opening. Also, the melting point of the conductive layer disposed in the opening may be selected to have a higher melting point than that of a general bonding material. Therefore, even when the light emitting device device package 100 according to the embodiment is bonded to the main substrate through a reflow process, since a re-melting phenomenon does not occur, electrical connection and physical bonding strength are not deteriorated. There are advantages to not

<Second Embodiment>

27 and 28 are side cross-sectional views of a light emitting device package according to a second embodiment.

As shown in FIGS. 27 and 28 , the light emitting device package 300 may include a body 110B and a light emitting device 120 .

The body 110B may provide a concave cavity C at an upper portion. The cavity C may reflect incident light upward. The cavity (C) may have a side surface inclined with respect to the bottom surface. The body 110B is polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide9T (PA9T), silicone, epoxy molding compound (EMC), silicone molding compound (SMC), ceramics, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. In addition, the body 110B may include a high refractive index filler such as TiO ₂ and SiO ₂ .

According to an embodiment, the light emitting device 120 may include a first bonding pad 121, a second bonding pad 122, and a light emitting unit 123 having a semiconductor layer. The configuration of the light emitting device 120 will refer to the description of the embodiment disclosed above. As shown in FIGS. 29 and 30 , the first bonding pad 1172 may have a different size depending on the contact area. FIG. 30 is an example in which the size of the contact area and the non-contact area is changed by modifying the shape and size of the first and second bonding pads 1172 and 1171 of FIG. 29 .

The light emitting device 120 may be disposed on the body 110 . The first bonding pad 121 may be disposed on a lower surface of the light emitting device 120 . The second bonding pad 122 may be disposed on a lower surface of the light emitting device 120 .

The body 110B may include a plurality of openings, for example, a first opening TH1 and a second opening TH2. The first opening TH1 may be disposed below the first bonding pad 121 of the light emitting device 120 and may pass through a lower portion of the body 110B. The first opening TH1 may overlap the first bonding pad 121 of the light emitting device 120 . The second opening TH2 may be disposed below the second bonding pad 122 of the light emitting element 120 and may pass through a lower portion of the body 110B. The second opening TH2 may overlap with the second bonding pad 122 of the light emitting device 120 .

At least one or both of the first bonding pad 121 and the second bonding pad 122 may include the above-described contact area and non-contact area, and a detailed description will refer to the above description. . For example, as shown in FIG. 28 , the first bonding pad 121 may include first contact areas 21 and 22 and first non-contact areas 33 and 23 .

The body 110B may include a recess R. The recess R may be provided concavely from the bottom surface of the cavity C to the bottom surface of the body 110B. The recess R may be disposed under the light emitting device 120 and may be disposed to overlap a region between the first and second bonding pads 121 and 122 .

An adhesive 130 may be disposed in the recess R. The adhesive 130 may be disposed between the light emitting device 120 and the bottom surface of the cavity (C). The adhesive 130 may be disposed between the first bonding pad 121 and the second bonding pad 122 . For example, the adhesive 130 may be placed in contact with the side surfaces of the first bonding pad 121 and the side surface of the second bonding pad 122 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 110B. For example, the adhesive 130 may be placed in direct contact with the bottom surface of the cavity C of the body 110 . In addition, the adhesive 130 may be placed in direct contact with the lower surface of the light emitting device 120 . For example, the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. .

When light is emitted from the lower surface of the light emitting element 120, the adhesive 130 may provide a light diffusion function between the light emitting element and the body. When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the adhesive 130 provides a light diffusing function, thereby improving the light extraction efficiency of the light emitting device package 300.

According to the embodiment, the depth T1 of the recess R may be smaller than the depth T2 of the openings TH1 and TH2. The depth T1 of the recess R may be determined in consideration of the adhesive strength of the adhesive 130 . In addition, the depth T1 of the recess R considers the stable strength of the mount part 111 and/or prevents cracks in the light emitting device package 300 due to heat emitted from the light emitting device 120. It can be decided not to happen.

The recess R may provide an appropriate space in which a kind of underfill process can be performed under the light emitting device 120 . For example, the depth T1 of the recess R may be 40 micrometers or more, for example, 40 to 60 micrometers.

180 micrometers or more of the first and second openings TH1 and TH2 may be provided, for example, 180 to 220 micrometers. As an example, the depth (T2-T1) may be selected to be at least 100 micrometers or more. According to an embodiment, the ratio (T2/T1) of the T1 depth to the T2 depth may be provided as 2 to 10. For example, if the depth of T2 is provided as 200 micrometers, the depth of T1 may be provided as 20 micrometers to 100 micrometers.

A length of the recess R in the Y direction may be greater than that of the first and second openings TH1 and TH2. Lengths of the first and second openings TH1 and TH2 in the Y direction may be smaller than the length of the light emitting device 120 in the short axis direction. Also, the length of the recess R in the Y direction may be greater or smaller than the length of the light emitting device 120 in the short axis direction.

Conductive layers 411 and 412 may be disposed in the first and second openings TH1 and TH2 , and the conductive layers 411 and 412 are made of a conductive material and may be connected to and in contact with the first and second bonding pads 121 and 122 . . The conductive layers 411 and 412 may include one material selected from a group including Ag, Au, Pt, Sn, Cu, Zn, In, Bi, contact, Ti, and the like, or an alloy thereof. The conductive layers 411 and 412 are solder paste, and may be formed by mixing powder or particles and flux. The solder paste may include Sn-Ag-Cu, and the weight % of each metal may vary. For example, the first conductive layer 411 and the second conductive layer 412 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, and the like, and may be composed of multiple layers composed of different materials or multiple layers or single layers composed of alloys.

The conductive layers 411 and 412 may contact contact areas of the respective bonding pads 121 and 122 and may not contact non-contact areas on the openings TH1 and TH2. This configuration will refer to the description of the first embodiment. Since the conductive layers 411 and 412 have a non-contact area with the bonding pads 121 and 122 on each opening TH1 and TH2, damage to the bonding pads 121 and 122 caused by the conductive layers 411 and 412 can be prevented. That is, since the conductive layers 411 and 412 can disperse the force of pulling the bonding pads 121 and 122, damage to the electrode can be prevented.

The packages of FIGS. 28 and 29 may include the resin portion described above, or may include the resin portion and the upper recess.

<light emitting device>

As an example, a flip chip light emitting device may be provided in the light emitting device package according to the embodiment. For example, the flip chip light emitting device may be provided as a transmissive type flip chip light emitting device that emits light in six directions, or may be provided as a reflection type flip chip light emitting device that emits light in five directions. The reflective flip chip light emitting device emitting light in the direction of the five surfaces may have a structure in which an insulating layer is disposed in a direction close to the body. For example, the reflective flip-chip light emitting device has an insulating insulating layer (eg Distributed Bragg Reflector, Omni Directional Reflector, etc.) and/or a conductive insulating layer (eg Ag, Al, Ni, Au, etc.) can include In addition, the flip chip light emitting device that emits light in the six-plane direction has a first bonding pad electrically connected to the first conductive semiconductor layer and a second bonding pad electrically connected to the second conductive semiconductor layer, It may be provided as a horizontal type light emitting device in which light is emitted between the first bonding pad and the second bonding pad.

In addition, the flip chip light emitting device emitting light in the six-plane direction is a transmissive flip chip light emitting device including both a reflective area in which an insulating layer is disposed between the first and second bonding pads and a transmissive area through which light is emitted. can be provided as

Here, the transmissive flip chip light emitting device means a device that emits light through six surfaces including an upper surface, four side surfaces, and a lower surface. In addition, the reflective flip chip light emitting device refers to a device that emits light from an upper surface and 5 surfaces of 4 side surfaces.

Then, an example of a flip chip light emitting device applied to a light emitting device package according to an embodiment of the present invention will be described with reference to the accompanying drawings.

First, a light emitting device according to an embodiment of the present invention will be described with reference to FIGS. 29 to 31 . 29 is a plan view showing a light emitting device according to an embodiment of the present invention, FIG. 30 is an example in which the first and second electrodes of FIG. 29 are arranged in different sizes, and FIG. 31 (a) (b) is a It is a drawing for explaining the first bonding pad and the second bonding pad along the A-A line.

29 , the first electrode and the second bonding pad 1171 are disposed under the first bonding pad 1172 and the second bonding pad 1171, but are electrically connected to the first bonding pad 1172. ) is shown so that the second electrode electrically connected to can be seen.

The light emitting device 1100 according to the embodiment may include a light emitting structure 1110 disposed on a substrate 1105 as shown in FIG. 31 . The substrate 1105 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, a concave-convex pattern may be formed on the top surface of the substrate 1105, and may be provided as, for example, PSS (Patterned Sapphire Substrate).

The light emitting structure 1110 may include a first conductivity type semiconductor layer 1111 , an active layer 1112 , and a second conductivity type semiconductor layer 1113 . The active layer 1112 may be disposed between the first conductivity type semiconductor layer 1111 and the second conductivity type semiconductor layer 1113 . For example, the active layer 1112 may be disposed on the first conductivity-type semiconductor layer 1111 , and the second conductivity-type semiconductor layer 1113 may be disposed on the active layer 1112 .

According to an embodiment, the first conductivity type semiconductor layer 1111 may be provided as an n-type semiconductor layer, and the second conductivity type semiconductor layer 1113 may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity type semiconductor layer 1111 may be provided as a p-type semiconductor layer, and the second conductivity type semiconductor layer 1113 may be provided as an n-type semiconductor layer.

The light emitting device 1100 according to the embodiment may include an ohmic contact layer. The ohmic contact layer may increase light output by improving current diffusion. For example, the ohmic contact layer may include at least one selected from a group including a metal, a metal oxide, and a metal nitride. The ohmic contact layer may include a light-transmitting material. The ohmic contact layer may be, for example, ITO (indium tin oxide), IZO (indium zinc oxide), IZON (IZO nitride), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide) oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/ It may include at least one selected from the group including Au/ITO, Pt, Ni, Au, Rh, and Pd.

As shown in FIGS. 29 and 31 , the light emitting device 1100 according to the embodiment may include an insulating layer. The insulating layer may include a first insulating layer and a second insulating layer. The insulating layer may be disposed on the ohmic contact layer. The first insulating layer may include a plurality of second openings exposing an upper surface of the first conductivity-type semiconductor layer 1111 . The second insulating layer may include a first opening exposing the ohmic contact layer. The second insulating layer may include a plurality of first openings disposed on the ohmic contact layer. Light emitted between the first insulating layer and the second insulating layer may be incident on the adhesive 130 disposed in the recess (R) region. The light emitted in the downward direction of the light emitting element can be light diffused by the adhesive (130 in FIG. 3), and the light extraction efficiency can be improved. Another insulating layer may be further disposed between the first and second insulating layers to reflect light incident toward the adhesive.

At least one of the insulating layers may be provided as an insulating insulating layer. For example, the insulating insulating layer may be provided as a DBR (Distributed Bragg Reflector) layer. In addition, the insulating insulating layer may be provided as an Omni Directional Reflector (ODR) layer. In addition, the insulating insulating layer may be provided by stacking a DBR layer and an ODR layer.

As shown in FIG. 29 , the light emitting device 1100 according to the embodiment may include a first electrode and a second electrode. The first electrode may be electrically connected to the first conductive semiconductor layer 1111 inside the second opening. The first electrode may be disposed on the first conductivity type semiconductor layer 1111 . The first electrode penetrates the second conductivity-type semiconductor layer 1113 and the active layer 1112 and extends to a partial region of the first conductivity-type semiconductor layer 1111 in a recess disposed in the first conductivity-type semiconductor layer. (1111) can be placed on the upper surface. The first electrode may be electrically connected to an upper surface of the first conductive semiconductor layer 1111 through a second opening provided in the first insulating layer. The second opening and the recess may vertically overlap each other. For example, as shown in FIGS. 29 and 31 , the first conductive semiconductor layer 1111 may be formed in a plurality of recess regions. ) can be directly contacted with the upper surface of the

The second electrode may be electrically connected to the second conductivity type semiconductor layer 1113 . The second electrode may be disposed on the second conductivity type semiconductor layer 1113 . According to an embodiment, the ohmic contact layer may be disposed between the second electrode and the second conductivity type semiconductor layer 1113 .

The second electrode may be electrically connected to the second conductive semiconductor layer 1113 through a first opening provided in the second insulating layer. For example, as shown in FIG. 31 , the second electrode may be electrically connected to the second conductivity type semiconductor layer 1113 through the ohmic contact layer in a plurality of P regions. As shown in FIG. 31 , the second electrode may directly contact the upper surface of the ohmic contact layer through a plurality of first openings provided in the second insulating layer in a plurality of P regions.

According to the embodiment, as shown in FIGS. 28 and 20 , the first electrode and the second electrode may have polarities and may be spaced apart from each other. The first electrode may be provided in the shape of a plurality of lines, for example. In addition, the second electrode may be provided in a plurality of line shapes, for example. The first electrode may be disposed between a plurality of adjacent second electrodes. The second electrode may be disposed between a plurality of adjacent first electrodes.

When the first electrode and the second electrode have different polarities, they may have different numbers of electrodes. For example, when the first electrode is composed of n electrodes and the second electrode is composed of p electrodes, the number of second electrodes may be greater than that of the first electrodes. When the electrical conductivity and/or resistance of the second conductivity type semiconductor layer 1113 and the first conductivity type semiconductor layer 1111 are different from each other, the light emitting structure 1110 is formed by the first electrode and the second electrode. It is possible to balance the electrons and holes injected into the light emitting device, and thus the optical characteristics of the light emitting device can be improved.

The first electrode and the second electrode may be formed in a single-layer or multi-layer structure. For example, the first electrode and the second electrode may be ohmic electrodes. For example, the first electrode and the second electrode may be ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al , Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or at least one or an alloy of two or more of these materials.

The light emitting device 1100 according to the embodiment may include a protective layer on a surface. The passivation layer may include a plurality of third openings exposing the second electrode, and may be disposed to correspond to a plurality of branch electrodes provided to the second electrode. The third opening may be a branch electrode according to an embodiment, and an area covered with the protective layer may be a non-contact area.

The protective layer may include a plurality of fourth openings exposing the first electrode. The plurality of fourth openings may be disposed to correspond to the plurality of branch electrodes provided in the first electrode. The protective layer may be disposed on the insulating layer. For example, the protective layer may be provided with an insulating material. For example, the protective layer is Si _x O _y , SiO _x N _y , It may be formed of at least one material selected from the group including Si _x N _y and Al _x O _y .

As shown in (a) (b) of FIGS. 29 and 31, the light emitting device 1100 according to the embodiment includes a first bonding pad 1172 and a second bonding pad 1171 disposed on the protective layer. can include The first bonding pad 1172 may be disposed on the first insulating layer. Also, the second bonding pad 1171 may be disposed on the second insulating layer. The first bonding pad 1172 may contact the upper surface of the first electrode through the plurality of fourth openings provided in the protective layer in the plurality of branch electrodes. The plurality of branch regions may be disposed to be vertically offset from the second opening. When the plurality of branch electrodes and the second opening are vertically displaced from each other, the current injected into the first bonding pad 1172 can spread evenly in the horizontal direction of the first electrode, and thus in the plurality of branch electrodes. Current can be evenly injected.

Also, the second bonding pad 1171 may contact the upper surface of the second electrode through the plurality of third openings. When the plurality of PB regions and the plurality of first openings are not vertically overlapped, the current injected into the second bonding pad 1171 can spread evenly in the horizontal direction of the second electrode, and thus the plurality of Current can be evenly injected in the PB region.

In this way, according to the light emitting device 1100 according to the embodiment, the first bonding pad 1172 and the first electrode may be in contact with each other in the plurality of fourth opening regions. Also, the second bonding pad 1171 and the second electrode may contact each other in a plurality of areas. Accordingly, according to the embodiment, since power can be supplied through a plurality of regions, there is an advantage in that a current dissipation effect occurs and an operating voltage can be reduced according to the increase in the contact area and the dispersion of the branch electrodes.

In addition, according to the light emitting device 1100 according to the embodiment, as shown in FIG. 31, the first insulating layer is disposed under the first electrode, and the second insulating layer is disposed under the second electrode. do. Accordingly, the first insulating layer and the second insulating layer reflect light emitted from the active layer 1112 of the light emitting structure 1110 to minimize light absorption at the first electrode and the second electrode, thereby increasing the light intensity. (Po) can be improved. For example, the first insulating layer and the second insulating layer may be made of an insulating material, but a material having high reflectivity, for example, a DBR structure, may be formed to reflect light emitted from the active layer 1112 .

The first insulating layer and the second insulating layer may form a DBR structure in which materials having different refractive indices are repeatedly disposed. For example, the first insulating layer and the second insulating layer may be disposed in a single layer or stacked structure including at least one of TiO ₂ , SiO ₂ , Ta ₂ O ₅ , and HfO ₂ .

In addition, according to another embodiment, without limitation, the first insulating layer and the second insulating layer reflect the light emitted from the active layer 1112 according to the wavelength of the light emitted from the active layer 1112. can be freely chosen to adjust the

Also, according to another embodiment, the first insulating layer and the second insulating layer may be provided as ODR layers. According to another embodiment, the first insulating layer and the second insulating layer may be provided in a kind of hybrid form in which a DBR layer and an ODR layer are stacked.

When the light emitting device according to the embodiment is implemented as a light emitting device package by being mounted in a flip chip bonding method, light provided from the light emitting structure 1110 may be emitted through the substrate 1105 . Light emitted from the light emitting structure 1110 may be reflected from the first insulating layer and the second insulating layer and emitted toward the light-transmitting substrate 1105 .

In addition, light emitted from the light emitting structure 1110 may also be emitted in a lateral direction of the light emitting structure 1110 . In addition, light emitted from the light emitting structure 1110 is bonded to the first bonding pad 1172 and the second bonding pad 1172 among the surfaces on which the first bonding pad 1172 and the second bonding pad 1171 are disposed. The pad 1171 may be emitted to the outside through an area where the pad 1171 is not provided.

Accordingly, the light emitting device 1100 according to the embodiment can emit light in six directions surrounding the light emitting structure 1110, and can significantly improve the luminous intensity.

Meanwhile, according to the light emitting device according to the embodiment, when viewed from the upper direction of the light emitting device 1100, the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is The pad 1171 and the second bonding pad 1171 may be provided equal to or smaller than 60% of the total area of the upper surface of the light emitting device 1100 . The first bonding pad 1171 is the first bonding pad 1172

For example, the total area of the upper surface of the light emitting device 1100 may correspond to an area defined by the horizontal and vertical lengths of the lower surface of the first conductivity type semiconductor layer 1111 of the light emitting structure 1110. . Also, the entire area of the upper surface of the light emitting device 1100 may correspond to the area of the upper or lower surface of the substrate 1105 .

In this way, the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is provided equal to or smaller than 60% of the total area of the light emitting device 1100, so that the first bonding The amount of light emitted to the surface where the pad 1172 and the second bonding pad 1171 are disposed can be increased. Accordingly, according to the embodiment, since the amount of light emitted in the direction of the six surfaces of the light emitting device 1100 increases, the light extraction efficiency can be improved and the luminous intensity Po can be increased. The first bonding pad 1172 and the second bonding pad 1171 have the same area ratio, or the area of the first bonding pad 1172 is 1% or less than the area of the second bonding pad 1171, for example, 1 to 1 It can be as small as 40%. The first bonding pad 1172 may be spaced apart from a side surface of the chip by a predetermined distance (W).

The first bonding pad 1172 may include a first concave portion (non-contact area in FIG. 9 ) concave in a first direction, and the second bonding pad 1171 may include a first concave portion concave in a first direction. A second concave portion (non-contact area in FIG. 9 ) concave in the opposite direction may be provided. The first concave portion and the second concave portion may be disposed so as not to overlap each other in the first direction.

In addition, when viewed from the top of the light emitting element, the sum of the area of the first bonding pad 1172 and the area of the second bonding pad 1171 is 30% of the total area of the light emitting element 1100. It can be provided equal or greater. In this way, the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is equal to or larger than 30% of the total area of the light emitting device 1100, thereby providing the first bonding Stable mounting can be performed through the pad 1172 and the second bonding pad 1171, and electrical characteristics of the light emitting element 1100 can be secured.

In the light emitting device 1100 according to the embodiment, in consideration of light extraction efficiency and bonding stability, the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is the light emitting device 1100 ) can be selected to be 30% or more and 60% or less of the total area of ).

That is, when the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is greater than or equal to 30% and less than or equal to 100% of the total area of the light emitting device 1100, the light emitting device 1100 Stable mounting can be performed by securing electrical characteristics and securing bonding force to be mounted on the light emitting device package.

In addition, when the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is more than 0% and less than 60% of the total area of the light emitting device 1100, the first bonding pad 1172 ) and the second bonding pad 1171 are disposed, the light extraction efficiency of the light emitting device 1100 may be improved and the light intensity Po may be increased.

In the embodiment, the areas of the first bonding pad 1172 and the second bonding pad 1171 are secured to secure electrical characteristics of the light emitting device 1100 and bonding force mounted on the light emitting device package, and to increase light intensity. The sum of was selected to be 30% or more to 60% or less of the total area of the light emitting device 1100.

When the area of the third insulating layer () is 10% or more of the total upper surface of the light emitting device 1100, discoloration or cracking of the package body disposed under the light emitting device can be prevented, and 25% In the case of the following, it is advantageous to secure light extraction efficiency to emit light from the six sides of the light emitting device.

For example, the area of the first insulating layer may be provided in a size sufficient to completely cover the area of the first bonding pad 1172 . Considering the process error, the length of one side of the first insulating layer may be greater than the length of one side of the first bonding pad 1172 by, for example, about 4 micrometers to about 10 micrometers. For example, the area of the second insulating layer may be provided with a size sufficient to completely cover the area of the second bonding pad 1171 . Considering process error, the length of one side of the second insulating layer may be greater than the length of one side of the second bonding pad 1171 by, for example, about 4 micrometers to about 10 micrometers.

According to the embodiment, light emitted from the light emitting structure 1110 is not incident on the first bonding pad 1172 and the second bonding pad 1171 by the first insulating layer and the second insulating layer. and can be reflected. Accordingly, according to the embodiment, loss of light generated and emitted from the light emitting structure 1110 incident to the first bonding pad 1172 and the second bonding pad 1171 can be minimized.

According to the light emitting device 1100 according to the embodiment, since the third insulating layer 1172 is disposed between the first bonding pad 1172 and the second bonding pad 1171, the first bonding pad 1172 And the amount of light emitted between the second bonding pad 1171 can be adjusted.

As described above, the light emitting device 1100 according to the embodiment may be mounted in a flip chip bonding method and provided in the form of a light emitting device package. At this time, when the package body in which the light emitting device 1100 is mounted is made of resin or the like, the package body is discolored by strong short-wavelength light emitted from the light emitting device 1100 in the lower region of the light emitting device 1100. or cracks may occur.

According to the light emitting device 1100 according to the embodiment, a plurality of contact holes C31, C32, and C33 may be provided in the ohmic contact layer. The second conductivity type semiconductor layer 1113 and the insulating layer may be bonded through the plurality of contact holes C31 , C32 , and C33 provided in the ohmic contact layer. Since the insulating layer ( ) can directly contact the second conductivity type semiconductor layer 1113 , adhesive strength can be improved compared to when the insulating layer ( ) is in contact with the ohmic contact layer.

When the insulating layer ( ) directly contacts only the ohmic contact layer, the bonding force or adhesive force between the insulating layer ( ) and the ohmic contact layer may be weakened. For example, when the insulating layer and the metal layer are bonded, bonding strength or adhesive strength between materials may be weakened.

For example, when the bonding force or adhesive force between the insulating layer ( ) and the ohmic contact layer is weak, peeling may occur between the two layers. In this way, when peeling occurs between the insulating layer ( ) and the ohmic contact layer, the characteristics of the light emitting device 1100 may be deteriorated, and reliability of the light emitting device 1100 cannot be secured.

The ohmic contact layer may include a first region R11, a second region R12, and a third region R13. The first region R11 and the second region R12 may be spaced apart from each other. Also, the third region R13 may be disposed between the first region R11 and the second region R12.

The first region R11 may include a plurality of openings provided in an area corresponding to the mesa opening of the light emitting structure 1110 . Also, the first region R11 may include a plurality of first contact holes C31. For example, a plurality of first contact holes C31 may be provided around the opening.

The second region R12 may include a plurality of openings provided in an area corresponding to the mesa opening of the light emitting structure 1110 . Also, the second region R12 may include a plurality of second contact holes C32. For example, a plurality of second contact holes C32 may be provided around the opening.

The third region R13 may include a plurality of openings provided in an area corresponding to the mesa opening of the light emitting structure 1110 . Also, the first region R11 may include a plurality of first contact holes C31. For example, a plurality of first contact holes C31 may be provided around the opening. According to an embodiment, the first contact hole C31, the second contact hole C32, and the third contact hole C33 may have a diameter of 7 micrometers to 20 micrometers, for example. The first contact hole C31, the second contact hole C32, and the third contact hole C33 may be provided in various shapes such as an ellipse or a polygon as well as a circular shape.

According to the embodiment, the second conductivity type semiconductor layer 1113 disposed under the ohmic contact layer by the first contact hole C31, the second contact hole C32, and the third contact hole C33. ) can be exposed.

In this way, according to the light emitting device 1100 according to the embodiment, the first bonding pad 1172 and the first electrode may be in contact with each other in a plurality of areas. Also, the second bonding pad 1171 and the second electrode may contact each other in a plurality of areas. Accordingly, according to the embodiment, since power can be supplied through a plurality of regions, there is an advantage in that a current dispersion effect occurs and an operating voltage can be reduced according to the increase in the contact area and the dispersion of the contact area.

As described above, according to the light emitting device package according to the embodiment, at least one or all of the electrodes of the light emitting device according to the embodiment may correspond to the opening of the body, and at least one of the electrodes corresponding to the opening One is a region in contact with the conductive layer and a region not in contact with the conductive layer, and may correspond to the opening. Accordingly, the electrode of the light emitting device may receive driving power through the frame or/and the conductive layer. Since the contact area between the conductive layer and the electrode is smaller than the upper surface area of the opening, the adhesive force between the conductive layer and the electrode can be alleviated, thereby preventing interface separation between the electrode and the semiconductor layer. .

Also, the melting point of the conductive layer disposed in the opening may be selected to have a higher melting point than that of a general bonding material. Therefore, the light emitting device device package according to the embodiment has the advantage of not deteriorating electrical connection and physical bonding force because a re-melting phenomenon does not occur even when bonded to a main substrate or the like through a reflow process. there is.

In addition, according to the light emitting device package according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored due to exposure to high temperatures.

As described above, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first bonding pad and the second bonding pad of the light emitting device according to the embodiment are driven by power through the conductive layer disposed in the opening. can be provided. Also, the melting point of the conductive layer disposed in the opening may be selected to have a higher melting point than that of a general bonding material.

Therefore, the light emitting device device package according to the embodiment has the advantage of not deteriorating electrical connection and physical bonding force because a re-melting phenomenon does not occur even when bonded to a main substrate or the like through a reflow process. there is.

In addition, according to the light emitting device package according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored due to exposure to high temperatures. Accordingly, it is possible to widen the range of selection of materials constituting the body. According to an embodiment, the body may be provided using a relatively inexpensive resin material as well as an expensive material such as ceramic.

Meanwhile, the light emitting device package according to the embodiment may be applied to a light source device.

In addition, the light source device may include a display device, a lighting device, a head lamp, and the like according to industrial fields.

As an example of the light source device, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module that emits light and includes a light emitting element, and a light emitting module disposed in front of the reflector and guiding light emitted from the light emitting module forward. A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying image signals to the display panel, A color filter disposed on the front side may be included. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. In addition, the display device may have a structure in which light emitting elements emitting red, green, and blue light are respectively disposed without including a color filter.

As another example of a light source device, a headlamp includes a light emitting module including a light emitting device package disposed on a substrate, a reflector for reflecting light emitted from the light emitting module in a predetermined direction, for example, forward, and a light reflected by the reflector. It may include a lens that refracts light forward, and a shade that blocks or reflects a part of the light reflected by the reflector and directed to the lens to achieve a light distribution pattern desired by a designer.

A lighting device, which is another example of a light source device, may include a cover, a light source module, a radiator, a power supply unit, an inner case, and a socket. Also, the light source device according to the embodiment may further include at least one of a member and a holder. The light source module may include a light emitting device package according to an embodiment.

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified with respect to other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to these combinations and variations should be interpreted as being included in the scope of the embodiments.

Although the above has been described centering on the embodiment, this is only an example and is not intended to limit the embodiment, and those skilled in the art to which the embodiment belongs may find various things not exemplified above to the extent that they do not deviate from the essential characteristics of the present embodiment. It will be appreciated that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

110: package body
111: first frame
112: second frame
113: body
120: light emitting element
121: first bonding pad
122: second bonding pad
123: light emitting part
130: adhesive
135: resin part
140: molding part
310: circuit board
311: first pad
312 second pad
321: first conductive layer
322: second conductive layer
R: recess
TH1: first opening
TH2: second opening

Claims (10)

a first frame having a first opening;
a second frame having a second opening;
a body disposed between the first frame and the second frame;
a light emitting device including a first bonding pad and a second bonding pad;
a first conductive layer disposed in the first opening; and
A second conductive layer disposed in the second opening;
The first opening penetrates the upper and lower surfaces of the first frame,
The second opening penetrates the upper and lower surfaces of the second frame,
The first bonding pad includes a first contact area contacting the first conductive layer and at least one first non-contact area not physically contacting the first conductive layer on the first opening. According to claim 1,
A plurality of the first contact areas are connected by a first connection part. According to claim 1,
The second bonding pad includes a second contact area contacting the second conductive layer and a second non-contact area not physically contacting the second conductive layer on the second opening. According to claim 1,
A protective layer is disposed around the first bonding pad and the second bonding pad. According to claim 1,
the first contact area surrounds the first non-contact area;
The light emitting device package of claim 1 , wherein an area of the first contact region is greater than an area of the first non-contact region. According to claim 1,
The first contact area includes an inner contact area and an outer contact area,
The first non-contact area is disposed between the inner contact area and the outer contact area. According to claim 1,
A plurality of the first contact areas are disposed at corners of a polygonal shape;
The at least one first non-contact area is disposed between a plurality of the first contact areas. According to claim 1,
a plurality of said first contact areas are arranged in a matrix;
the at least one first non-contact area is disposed between a plurality of the first contact areas;
The plurality of first contact areas are disposed to surround at least three sides of the first non-contact area. According to claim 3,
An area of the first contact region or the second contact region is at least twice the area of particles constituting the first conductive layer or the second conductive layer. According to claim 3,
Areas of the first non-contact region and the second non-contact region are at least 1.5 times the area of particles constituting the first conductive layer or the second conductive layer.

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