KR20190022211A - Semiconductor device, light semiconducotr device package - Google Patents

Abstract

The present invention provides a semiconductor device package or a light emitting device package which can increase light extraction efficiency and electrical characteristics. According to an embodiment of the present invention, the semiconductor device package comprises: first and second frames having first and second opening units; a body arranged between the first and second frames; a light emitting device including first and second bonding pads; and a conductive layer in the first and second opening units. At least one of the first and second bonding pads faces the first and second frames, overlaps the first and second opening units, includes a contact region which is in contact with the conductive layer and a first noncontact region which is not in contact with the conductive layer and prevents damage to an electrode by the conductive layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a semiconductor device and a semiconductor device package,

The embodiments relate to a semiconductor device, a semiconductor device package, a method of manufacturing a semiconductor device package, and a light source device.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a Group III-V or Group II-VI compound semiconductor material can be used for a variety of applications such as red, Blue and ultraviolet rays can be realized. In addition, a light emitting device such as a light emitting diode or a laser diode using a Group III-V or Group-VI-VI compound semiconductor material can realize a white light source having high efficiency by using a fluorescent material or combining colors. Such a light emitting device has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environment friendliness compared with conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a Group III-V or Group-VI-VI compound semiconducting material, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. Further, such a light receiving element has advantages of fast response speed, safety, environmental friendliness and easy control of element materials, and can be easily used for power control or microwave circuit or communication module.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diode (LED) lighting devices, automotive headlights, traffic lights, and gas and fire sensors. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

The light emitting device can be provided as a pn junction diode having a characteristic in which electric energy is converted into light energy by using a group III-V element or a group II-VI element in the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, a blue light emitting element, a green light emitting element, an ultraviolet (UV) light emitting element, and a red (RED) light emitting element using a nitride semiconductor are commercially available and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm. It is used for sterilizing and purifying in the wavelength band, short wavelength, Can be used.

 Ultraviolet rays can be divided into UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm) and UV-C (200nm ~ 280nm) in the long wavelength order. UV-A (315nm ~ 400nm) is applied in various fields such as UV curing for industrial use, curing of printing ink, exposure machine, discrimination of counterfeit, photocatalytic disinfection and special illumination (aquarium / ) Area is used for medical use, and UV-C (200nm ~ 280nm) area is applied to air purification, water purification, sterilization products and the like.

On the other hand, a semiconductor device capable of providing a high output has been requested, and a semiconductor device capable of increasing a power by applying a high power source has been studied.

In addition, studies are being made on a method for improving the light extraction efficiency of a semiconductor device and improving the light intensity at a package end in a semiconductor device package. In addition, studies have been made on a method for improving the bonding strength between a package electrode and a semiconductor device in a semiconductor device package.

In addition, studies have been made on a method for reducing the manufacturing cost and improving the manufacturing yield by improving the process efficiency and changing the structure in the semiconductor device package.

Embodiments can provide a semiconductor device package or a light emitting device package in which an electrode of a semiconductor element or a light emitting element facing an opening of a frame has a contact region and an open region or a non-contact region.

Embodiments provide a semiconductor device package or a light emitting device package in which a semiconductor element or an electrode of a light emitting element facing an opening of a frame is provided in a contact region and a non-contact region to disperse the adhesive force with the conductive layer.

Embodiments can provide a semiconductor device package or a light emitting device package capable of improving light extraction efficiency and electrical characteristics.

Embodiments can provide a semiconductor device package or a light emitting device package capable of reducing manufacturing cost and improving manufacturing yield by improving process efficiency and presenting a new package structure.

Embodiments can provide a semiconductor device package or a light emitting device package capable of preventing a re-melting phenomenon from occurring in a bonding region of a semiconductor device package in a process of re-bonding the semiconductor device package to a substrate or the like.

A light emitting device package according to an embodiment includes: a first frame having a first opening; A second frame having a second opening; A body disposed between the first and second frames; A light emitting device including a first bonding pad and a second bonding pad; A first conductive layer in the first opening; And a second conductive layer on the second opening, the first opening passing through the upper surface and the lower surface of the first frame, the second opening passing through the upper surface and the lower surface of the second frame, Wherein the first electrode faces the first frame and overlaps with the first opening, the second electrode faces the second frame and overlaps with the second opening, and the first electrode overlaps with the first frame on the first opening, And may have a first contact region in contact with the first conductive layer and a first non-contact region in non-contact with the first conductive layer.

According to an embodiment, the second electrode may include a second contact region in contact with the second conductive layer on the second opening, and a second non-contact region in non-contact with the second conductive layer.

According to an embodiment, the first and second conductive layers include a solder paste, and the body may be an insulating material.

According to an embodiment of the present invention, at least one of the first and second electrodes may have an area of each of the first and second contact regions that is at least twice the area of particles of the first and second conductive layers. At least one of the first and second electrodes may have an area of each of the first and second non-contact areas of at least 1.5 times the area of the particles of the first and second conductive layers.

According to an embodiment of the present invention, the area of the first contact area of the first bonding pad is smaller than the area of the top surface of the first opening, and the area of the second contact area of the second electrode is smaller than the top surface area of the second opening have.

According to the embodiment, the first contact areas of the first bonding pads are arranged on the first openings in one or more than one, and the second contact areas of the second electrodes are arranged on the second openings in one or plural Wherein the first non-contact regions of the first bonding pads are disposed on the first openings in a single or plurality of areas and have an area smaller than an area of the first contact regions, May be disposed on the second opening portion in one or more than two and may have an area smaller than the area of the second contact region.

According to an embodiment of the present invention, the first and second conductive layers may have a concave curved surface on the first and second non-contact regions, and include at least one of an adhesive and a resin portion disposed between the body and the light emitting element .

According to an embodiment of the present invention, the body includes a recess recessed from a top surface in a downward direction, the adhesive is disposed in the recess, and the adhesive is applied to an upper surface of the body, As shown in FIG.

According to an embodiment of the present invention, at least one of the adhesive and the resin part may be disposed outside the non-contact area of the first and second electrodes.

According to an embodiment, the first and second frames are conductive frames, and the adhesive may be formed of an insulating resin material.

According to the embodiment, the body may have a concave cavity around the light emitting device.

According to the semiconductor device package and the method for fabricating a semiconductor device package according to the embodiments, the contact area and the non-contact area are provided in the electrodes corresponding to the openings of the package body in the electrodes of the light emitting device, have.

According to the semiconductor device package and the method for fabricating a semiconductor device package according to the embodiments, the light extraction efficiency, electrical characteristics and reliability can be improved.

According to the semiconductor device package and the method for manufacturing a semiconductor device package according to the embodiments, the process efficiency is improved and a new package structure is presented, which is advantageous in that the manufacturing cost can be reduced and the manufacturing yield can be improved.

The semiconductor device package according to the embodiment has an advantage that the reflector can be prevented from being discolored by providing the body with high reflectance, thereby improving the reliability of the semiconductor device package.

According to the semiconductor device package and the method for manufacturing a semiconductor device according to the embodiments, it is possible to prevent the re-melting phenomenon from occurring in the bonding area of the semiconductor device package in the process of re-bonding the semiconductor device package to the substrate .

The reliability of the semiconductor device package or the light emitting device package according to the embodiment can be improved.

1 is a plan view of a light emitting device package according to a first embodiment of the present invention.
2 is a bottom view of the light emitting device package shown in FIG.
3 is a cross-sectional view taken along line DD of the light emitting device package shown in FIG.
4 is a cross-sectional view along the line EE of the light emitting device package shown in FIG.
5 is a cross-sectional view along the FF line of the light emitting device package shown in FIG.
6 is a detailed view showing a first bonding pad and a first conductive layer of the light emitting device of FIG.
7 is a detailed view showing a second electrode and a second conductive layer of the light emitting device of FIG.
8 is a partial enlarged view of the light emitting device package of Fig.
9 is a view for explaining contact and non-contact areas between the first and second electrodes and the first and second conductive layers of the light emitting device of FIG.
10 is another example of the first and second electrodes and openings of the light emitting device of FIG.
11 is a first modification of the electrode of the light emitting device according to the embodiment.
12 is an example of arrangement of the electrode and the opening of the body of the light emitting element of Fig.
13 is a second modification of the electrode of the light emitting element of Fig.
Fig. 14 is an example of arrangement of the electrode and the opening of the body of the light emitting device of Fig.
FIGS. 15 to 17 show another modification of the electrode of the light emitting device according to the embodiment.
19 to 22 show examples of openings of the light emitting device according to the embodiment.
23 is a first modification of the light emitting device package of Fig.
Fig. 24 is a second modification of the light emitting device package of Fig. 3;
25 is an example of a module in which the light emitting device package of Fig. 3 is disposed on a circuit board.
Fig. 26 is an example of a module in which the light emitting device package of Fig. 3 is disposed on a circuit board.
27 is a side cross-sectional view of a light emitting device package according to a second embodiment of the present invention.
28 is another sectional side view of the light emitting device package of Fig.
29 is a plan view of a light emitting device according to the embodiment.
30 is a plan view showing another example of the light emitting device according to the embodiment.
31 (a) and 31 (b) are cross-sectional views showing a first bonding pad and a second bonding pad according to an AA line cross-section of the light emitting device of FIG. 29;

Hereinafter, embodiments will be described with reference to the accompanying drawings. In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. In addition, the criteria for the top, bottom, or bottom of each layer will be described with reference to drawings, but the embodiment is not limited thereto.

Hereinafter, a semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The semiconductor device of the semiconductor device package may include a light emitting device that emits light of an ultraviolet ray, an infrared ray, or a visible ray. Hereinafter, a case where a light emitting device is applied as an example of a semiconductor device will be described, and a package or a light source device to which the light emitting device is applied includes a non-light emitting device such as a zener diode or a sensing device for monitoring wavelength or heat Hereinafter, a semiconductor device package or a light emitting device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. Hereinafter, a case where a light emitting device is applied as an example of a semiconductor device will be described.

≪ Embodiment 1 >

FIG. 1 is a plan view of a light emitting device package according to a first embodiment of the present invention, FIG. 2 is a bottom view of the light emitting device package shown in FIG. 1, FIG. 4 is a cross-sectional view taken along line EE of the light emitting device package shown in FIG. 1, FIG. 5 is a cross-sectional view along the FF line of the light emitting device package shown in FIG. 1, 7 is a detailed view showing a second electrode and a second conductive layer of the light emitting device of FIG. 5, and FIG. 8 is a detailed view of a portion of the light emitting device package of FIG. 1 And FIG. 9 is a view for explaining contact and non-contact regions between the first and second electrodes and the first and second conductive layers of the light emitting device of FIG.

1 to 5, an element package 100 according to an embodiment includes a package body 110 having a plurality of frames 111 and 112 and a body 113 disposed between the plurality of frames 111 and 112, And a semiconductor device, for example, a light emitting device 120, disposed on the plurality of frames 111 and 112. Hereinafter, the device package 100 will be described as a light emitting device package in which the light emitting device 120 is disposed.

≪ Package body 110 >

The plurality of frames 111 and 112 may include at least two first frames 111 and a second frame 112, for example. The first frame 111 and the second frame 112 may be spaced apart from each other. The first and second frames 111 and 112 may be spaced apart in the X-axis direction.

The package body 110 may include a body 113. The body 113 may be disposed between the first frame 111 and the second frame 112. The body 113 may function as an electrode separation line. The body 113 may be referred to as an insulating member. The body 113 may be arranged in the Y axis direction orthogonal to the X axis direction between the frames 111 and 112.

The body 113 may be disposed on the first frame 111. In addition, the body 113 may be disposed on the second frame 112. The body 113 may provide an inclined surface disposed on the first frame 111 and the second frame 112. A wall portion 110A having a cavity C may be provided on the first frame 111 and the second frame 112 by an inclined surface of the body 113. [ The wall portion 110A may be integrally formed with the body 113 or may be formed separately. According to the embodiment, the package body 110 may be provided with a cavity C, or may be provided with a flat upper surface without a cavity C. The wall portion 110A can be removed.

For example, the body 113 may be formed of a material selected from the group consisting of polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide 9T, silicone, epoxy molding compound, And may be formed of at least one selected from the group including silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. In addition, the body 113 may include a high refractive index filler such as TiO ₂ and SiO ₂ .

The first frame 111 and the second frame 112 may be provided as a conductive frame. The first frame 111 and the second frame 112 can stably provide the structural strength of the package body 110 and can be electrically connected to the light emitting device 120. When the first frame 111 and the second frame 112 are conductive frames, the first frame 111 and the second frame 112 may be defined as a lead frame and may radiate heat or reflect light generated from the light emitting device 120.

As another example, the first frame 111 and the second frame 112 may be provided as an insulating frame. When the first frame 111 and the second frame 112 are insulative frames, the structural strength of the package body 110 can be stably provided. When the first frame 111 and the second frame 112 are insulative frames, the body 113 and the frames 111 and 112 may be integrally formed of the same material or may be made of different materials. The difference between the case where the first frame 111 and the second frame 112 are formed of an insulating frame and the case of forming a conductive frame will be described later.

When the first and second frames 111 and 112 are made of a conductive material, a metal such as Pt, Ti, Ni, Cu, Au, , Aluminum (Al), and silver (Ag), and may be a single layer or a multi-layer having different metal layers.

When the first and second frames 111 and 112 are made of an insulating material, the first and second frames 111 and 112 may be made of a resin material or an insulating material. Examples of the material include polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer PA9T (Polyamide9T), silicone, an epoxy molding compound (EMC: epoxy molding compound), at least one selected from a group which includes a silicone molding compound (SMC), a ceramic, PSG (photo sensitive glass), sapphire (Al ₂ O ₃₎ . In addition, the first and second frames 111 and 112 may include a high refractive index filler such as TiO ₂ and SiO ₂ as an epoxy material. The first and second frames 111 and 112 may be made of a reflective resin.

As shown in FIGS. 1 and 2, the first frame 111 may protrude further outward than the first side of the package body 110. The second frame 112 may protrude further than the second side opposite the first side of the package body 110.

<Light Emitting Device 120>

According to the embodiment, the light emitting device 120 may include a plurality of bonding pads 121 and 122, and a light emitting unit 123 having a semiconductor layer. One or a plurality of the light emitting devices 120 may be disposed on the first and second frames 111 and 112.

The semiconductor layer of the light emitting portion 123 may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first bonding pad 121 may be electrically connected to the first conductive semiconductor layer. In addition, the second bonding pad 122 may be electrically connected to the second conductive semiconductor layer.

According to the embodiment, the semiconductor layer of the light emitting portion 123 may be provided as a compound semiconductor. The semiconductor layer may be provided, for example, as a Group 2-VI-6 or Group-3-Group compound semiconductor. For example, the semiconductor layer may be provided with at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As) . The semiconductor layer may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

The first and second conductivity type semiconductor layers may be formed of at least one of Group III-V-Vs or Group V-VIs compound semiconductors. The first and second conductivity type semiconductor layers are formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? . For example, the first and second conductive semiconductor layers may include at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, . The first conductive semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se or Te. The second conductive semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr or Ba.

The active layer may be formed of a compound semiconductor. The active layer may be implemented, for example, in at least one of Group 3-Group-5 or Group-6-Group compound semiconductors. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of alternately arranged well layers and a plurality of barrier layers, and may be In _x Al _y Ga _{1 -x- y} N , 0? Y? 1, 0? X + y? 1). For example, the active layer may be selected from the group consisting of InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / InGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, And may include at least one.

The light emitting device 120 may be disposed on the package body 110. The light emitting device 120 may be disposed on the first frame 111 and the second frame 112. The light emitting device 120 may overlap the first frame 111 and the second frame 112 in the vertical direction, for example, in the Z axis direction. The light emitting device 120 may be disposed in the cavity C.

The bonding pads 121 and 122 of the light emitting device 120 may be spaced apart from each other below the light emitting unit 123. The bonding pads 121 and 122 may face the frames 111 and 112 in the vertical direction. The first bonding pad 121 may be disposed on the first frame 111. The second bonding pad 122 may be disposed on the second frame 112. The first bonding pad 121 may face the first frame 111 and the second bonding pad 122 may face the second frame 112. The first bonding pad 121 and the second bonding pad 122 may be spaced apart from each other on the lower surface of the light emitting device 120.

The first bonding pad 121 may be disposed between the semiconductor layer of the light emitting unit 123 and the first frame 111. The second bonding pad 122 may be disposed between the semiconductor layer of the light emitting unit 123 and the second frame 112. The first bonding pad 121 may be disposed between the first conductive type semiconductor layer and the first frame 111. The second bonding pad 122 may be disposed between the second conductive type semiconductor layer and the second frame 112.

The first bonding pad 121 and the second bonding pad 122 may be formed of one selected from the group consisting of Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Layer or an alloy using at least one material or alloy selected from the group consisting of Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / And may be formed in multiple layers.

<Openings (TH1 and TH2) of the body>

2 to 5, the light emitting device package 100 according to the embodiment may include at least two openings, for example, a first opening TH1 and a second opening TH2. The first frame 111 may include the first opening TH1. The second frame 112 may include the second opening TH2.

The first opening (TH1) may be provided in the first frame (111) or one or more. The first opening (TH1) may be provided through the first frame (111). The first opening TH1 may be provided through the upper surface and the lower surface of the first frame 111 in the Z direction.

The first opening TH1 may be disposed below the first bonding pad 121 of the light emitting device 120. [ The first opening TH1 may be provided in the Z direction overlapping with the first bonding pad 121 of the light emitting device 120. [ The first opening TH1 may be provided in a manner overlapping with the first bonding pad 121 of the light emitting device 120 in the Z direction toward the lower surface from the upper surface of the first frame 111. [

The second opening (TH2) may be provided in the second frame (112) or one or more. The second opening (TH2) may be provided through the second frame (112). The second opening portion TH2 may be provided through the upper surface and the lower surface of the second frame 112 in the Z direction.

The second opening TH2 may be disposed below the second bonding pad 122 of the light emitting device 120. [ The second opening portion TH2 may be provided to overlap with the second bonding pad 122 of the light emitting device 120. [ The second opening portion TH2 may be provided in a superimposed manner with the second bonding pad 122 of the light emitting device 120 in the direction from the upper surface to the lower surface of the second frame 112. [

The first opening TH1 and the second opening TH2 may be spaced apart from each other. The first opening portion TH1 and the second opening portion TH2 may be spaced apart from each other below the lower surface of the light emitting device 120. [ The first opening TH1 and the second opening TH2 may overlap the light emitting device 120 in the Z axis direction. The first opening TH1 and the second opening TH2 may be disposed in a region overlapping the light emitting device 120 and may be spaced apart from the body 113. [

3 and 8, the width W2 of the upper region of the first opening TH1 in the X direction is smaller than or equal to the width W1 of the first bonding pad 121, Can be provided. In addition, the width of the upper region of the second opening portion TH2 in the X direction may be less than or equal to the width of the second bonding pad 122. The widths of the first and second openings TH1 and TH2 in the X direction may be the same or different from each other. The widths of the first and second bonding pads 121 and 122 in the X direction may be the same or different from each other.

4 and 8, when the length W12 of the upper region of the first opening TH1 in the Y direction is smaller than or equal to the length W11 of the first bonding pad 121, Can be provided. The length W13 of the upper region of the second opening TH2 in the Y direction may be less than or equal to the length W14 of the second bonding pad 122 as shown in FIG. The lengths W2 and W5 in the Y direction of the first and second openings TH1 and TH2 may be different or the same. The lengths W1 and W6 of the first and second bonding pads 121 and 122 in the Y direction may be different or the same. Here, when the lengths of the bonding pads 121 and 122 are W13? W11, the lengths of the openings TH1 and TH2 may have a relationship of W12? W14. The upper surface area of each of the openings TH1 and TH2 may have a range of 50% to 110% of the lower surface area of the bonding pads 121 and 122, for example. Each of the openings TH1 and TH2 and each of the bonding pads 121 and 122 may have a non-overlapping region that does not face a partially overlapping region. Accordingly, the first bonding pad 121 and the first frame 111 of the light emitting device 120 can be attached by the material provided by the first opening TH1. Also, the second bonding pad 122 and the second frame 112 of the light emitting device 120 may be attached by the material provided by the first opening TH1.

The distance from the upper region of the second opening TH2 to the side end of the second bonding pad 122 in the X direction may be 40 micrometers or more, for example, 40 to 60 micrometers. It is possible to secure a process margin for preventing the second bonding pad 122 from being exposed at the bottom of the second opening portion TH2 when the distance is 40 micrometers or more. In addition, when the distance is less than 60 micrometers, the area of the second bonding pad 122 exposed to the second opening portion TH2 can be secured, and the second bonding portion exposed by the second opening portion TH2 The resistance of the pad 122 can be lowered and current injection can be smoothly performed to the second bonding pad 122 exposed by the second opening portion TH2.

The width W2 in the X direction of the upper region of the first opening TH1 may be smaller than the width of the lower region of the first opening TH1 as shown in FIGS. 8 and 19, TH3). &Lt; / RTI &gt; The width of the upper area of the second opening TH2 may be smaller than the width of the lower area of the second opening TH2 or may be provided in the opening TH3 having the same width as shown in Fig. As shown in Fig. 19, the circumferential surfaces of the openings TH1 and TH2 may be convex curved surfaces S1, or may be a plane S2 perpendicular to Fig.

The openings TH1, TH2, TH3, and TH5 may be provided in such a shape that the width in the X or Y direction gradually decreases from the lower region to the upper region, as shown in Figs. 19, 21, and 22. The circumferential surfaces S1, S3 and S4 between the upper and lower regions of the first and second openings TH1 and TH2 may be a plurality of inclined planes S3 having different slopes or curved surfaces S1 ) Or a curved surface S4 having a different curvature. The openings TH1, TH2, TH3, TH4 and TH5 may be at least one of a circumferential surface, an inclined surface and a curved surface. When the material of the frames 111 and 112 is an insulating material, And may be provided with a structure as shown in Figs. 19 to 22 in the case of a conductive material.

The interval between the first opening portion TH1 and the second opening portion TH2 in the lower surface region of the first frame 111 and the second frame portion 112 may be 100 micrometers or more, 150 micrometers. &Lt; / RTI &gt; The gap between the openings TH1 and TH2 may be a minimum distance for preventing electrical short between the electrodes when the light emitting device package 100 is mounted on a circuit board, .

<Adhesive (130)>

3 to 5, the light emitting device package 100 according to the embodiment may include an adhesive 130. The adhesive 130 may be disposed between the body 113 and the light emitting device 120. The adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120. The adhesive 130 may be superimposed in the Z axis direction perpendicular to the light emitting device 120. The adhesive 130 may be adhered to the light emitting device 120 and the body 113. The adhesive 130 may be disposed between the first bonding pad 121 and the second bonding pad 122 of the light emitting device 120 or may be in contact with the first and second bonding pads 121 and 122.

<Body recess (R)>

The light emitting device package 100 according to the embodiment may include a recess R as shown in FIGS. 1, 2 to 5. The recess R may be provided on the body 113 or the body 113. The recess R may be provided between the first opening TH1 and the second opening TH2. The recess (R) may be recessed in a downward direction from an upper surface of the body (113). One or more recesses (R) may be disposed under the light emitting device 120. The recesses R may be provided to overlap with the light emitting device 120 in the Z direction. The adhesive 130 may be disposed in the recess R, for example. The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110. The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113. The adhesive 130 may be disposed, for example, in direct contact with the upper surface of the body 113. In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120.

For example, the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material . Also, as an example, if the adhesive 130 comprises a reflective function, the adhesive may comprise a white silicone.

The adhesive 130 may provide a stable clamping force between the body 113 and the light emitting device 120. When the light is emitted to the lower surface of the light emitting device 120, It is possible to provide a light diffusion function between the bodies 113. [ When the light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the adhesive 130 may improve the light extraction efficiency of the light emitting device package 100 by providing a light diffusion function. In addition, the adhesive 130 may reflect light emitted from the light emitting device 120. When the adhesive 130 includes a reflection function, the adhesive 130 may be formed of a material including TiO ₂ , Silicone, and the like.

3, according to the embodiment, the depth T1 of the recess R is smaller than the depth T2 of the first opening portion TH1 or the depth T2 of the second opening portion TH2 Can be provided. The depth T1 of the recess R may be determined in consideration of the adhesive force of the adhesive 130. The depth T1 of the recess R may be determined by taking into consideration the stable strength of the body 113 and / or by applying heat to the light emitting device package 100 by heat emitted from the light emitting device 120. [ Can be determined not to occur.

The recess R may provide a suitable space under which an under-fill process may be performed under the light emitting device 120. The underfilling process may be a process of mounting the light emitting device 120 on the package body 110 and disposing the adhesive 130 under the light emitting device 120, 120 may be arranged in the recess R to be mounted on the package body 110 through the adhesive 130 after the adhesive 130 is mounted on the package body 110, have. The recess R may be provided at a depth greater than the first depth so that the adhesive 130 may be sufficiently provided between the lower surface of the light emitting device 120 and the upper surface of the body 113. In addition, the recesses R may be provided at a second depth or less to provide stable strength of the body 113.

The depth T1 of the recess R and the width W4 in the X direction may affect the forming position and fixing force of the adhesive 130. [ The depth T1 and the width W4 of the recess R may be determined so that a sufficient fixing force can be provided by the adhesive 130 disposed between the body 113 and the light emitting device 120 . By way of example, the depth T1 of the recess R may be provided in a range of 40 micrometers or more, for example, 40 to 60 micrometers.

The width W4 of the recess R may be narrower than the gap between the first bonding pad 121 and the second bonding pad 122 in the X direction of the light emitting device 120, Meter, for example, in the range of 140 to 160 micrometers. The length of the recess R in the Y direction may be greater or smaller than the length of the light emitting device 120 in the Y direction to guide the formation of the adhesive 130 and enhance the adhesive force in the Y direction.

The depth T2 of the first opening TH1 may be equal to the thickness of the first frame 111. [ The depth T2 of the first opening TH1 may be provided to a thickness sufficient to maintain a stable strength of the first frame 111. [ The depth T2 of the second opening portion TH2 may be the same as the thickness of the second frame 112. The depth T2 of the second opening portion TH2 may be provided to a thickness that can maintain stable strength of the second frame 112.

The depth T2 of the first opening TH1 and the depth T2 of the second opening TH2 may be the same as the thickness of the body 113. [ The depth T2 of the first opening portion TH1 and the depth T2 of the second opening portion TH2 may be provided to maintain a stable strength of the body 113. [ For example, the depth T2 of the first opening TH1 may be provided in a range of 180 micrometers or more, for example, 180 to 220 micrometers. By way of example, the difference in thickness of the depth (T2-T1) may be selected to be at least 100 micrometers or more. This is in consideration of the thickness of the injection process capable of providing crack free of the body 113.

According to the embodiment, the ratio of the T1 depth to the T2 depth (T2 / T1) may be provided from 2 to 10. As an example, if the depth of T2 is provided at 200 micrometers, the depth of T1 may be provided at 20 micrometers to 100 micrometers.

<Molding part 140>

The light emitting device package 100 according to the embodiment may include a molding part 140, as shown in FIGS. 1, 2 to 5. The molding part 140 may be provided on the light emitting device 120. The molding part 140 may be disposed on the first frame 111 and the second frame 112. The molding part 140 may be disposed in the cavity C provided by the package body 110.

The molding part 140 may include an insulating material. The molding unit 140 may include wavelength conversion means for receiving light emitted from the light emitting device 120 and providing wavelength-converted light. For example, the molding unit 140 may include at least one selected from the group including phosphors, quantum dots, and the like. The light emitting device 120 may emit light of blue, green, red, white, infrared, or ultraviolet rays. The above-mentioned phosphors or quantum dots may emit blue, green and red light. The molding part 140 may not be formed.

<Conductive layers 321 and 322>

The light emitting device package 100 according to the embodiment may include a first conductive layer 321 and a second conductive layer 322 as shown in FIGS. The first conductive layer 321 may be spaced apart from the second conductive layer 322.

The first conductive layer 321 may be provided in the first opening TH1. The first conductive layer 321 may be disposed below the first bonding pad 121. The width and length of the first conductive layer 321 in the X and Y directions may be smaller than the width and length of the first bonding pad 121.

The first bonding pad 121 may have a width in the X direction perpendicular to the Z direction in which the first opening TH1 is formed. The width of the first bonding pad 121 may be greater than the width W2 of the first opening TH1 in the X direction.

The first conductive layer 321 may be disposed in direct contact with the lower surface of the first bonding pad 121. The first conductive layer 321 may be electrically connected to the first bonding pad 121. The first frame 111 may be disposed around the first conductive layer 321.

The second conductive layer 322 may be provided in the second opening TH2. The second conductive layer 322 may be disposed under the second bonding pad 122. The width and length of the second conductive layer 322 in the X and Y directions may be smaller than the width and length of the second bonding pad 122. The second bonding pad 122 may have a width W13 in the X direction perpendicular to the Z direction in which the second opening portion TH2 is formed. The width W13 of the second bonding pad 122 in the X direction may be greater than the width W14 of the second opening TH2 in the X direction.

The second conductive layer 322 may be disposed in direct contact with the lower surface of the second bonding pad 122. The second conductive layer 322 may be electrically connected to the second bonding pad 122. The second frame 112 may be disposed around the second conductive layer 322.

The first conductive layer 321 and the second conductive layer 322 may be formed of one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, Zn, In, Bi, . &Lt; / RTI &gt; The first conductive layer 321 and the second conductive layer 322 may be formed of a material capable of ensuring a conductive function. The first and second conductive layers 321 and 322 are solder pastes, and may be formed by mixing powder particles or particle particles with flux. The solder paste may include Sn-Ag-Cu, and the weight percentage of each metal may be varied.

For example, the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste. The conductive paste may include a solder paste, a silver paste, or the like, and may be composed of a multi-layer or an alloy composed of different materials or a single layer.

The light emitting device package 100 according to the embodiment is connected to the first bonding pad 121 through the first conductive layer 321 of the first opening TH1, Power can be coupled to the second bonding pad 122 through the second conductive layer 322. When the first and second frames 111 and 112 are made of a conductive material, the first and second frames 111 and 112 may be electrically connected to the bonding pads 121 and 122 of the light emitting device 120. The electrodes 121 and 122 of the light emitting device 120 may be electrically connected to at least one or both of the first and second conductive layers 321 and 322 and the frames 111 and 112. Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding pad 121 and the second bonding pad 122. The light emitted from the light emitting device 120 may be provided in an upward direction of the package body 110.

&Lt; Lower recess (R10, R20) >

1 to 3, the light emitting device package 100 according to the embodiment may include a first lower recess R10 and a second lower recess R20. The first lower recess R10 and the second lower recess R20 may be spaced apart from each other.

The first lower recess (R10) may be provided on the lower surface of the first frame (111). The first lower recess R10 may be concave in the upper surface direction on the lower surface of the first frame 111. [ The first lower recess R10 may be spaced apart from the first opening TH1. A resin part may be provided in the first lower recess (R10). The resin portion filled in the first lower recess R10 may be provided with the same material as the body 113, for example. The resin part may be provided with a material selected from materials having poor adhesion and wettability with the first and second conductive layers 321 and 322. Alternatively, the resin portion may be selected and provided from a material having a low surface tension with respect to the first and second conductive layers 321 and 322. For example, a resin part filled in the first lower recess R10 may be provided in the process of forming the first frame 111, the second frame 112, and the body 113 through an injection process or the like .

The resin part filled in the first lower recess R10 may be disposed around the lower surface area of the first frame 111 providing the first opening TH1. The lower surface of the first frame 111 providing the first opening TH1 may be disposed in a form of an island in a shape separated from a lower surface of the first frame 111 surrounding the first frame 111. [ 2, the lower surface of the first frame 111 providing the first opening TH1 is divided into a resin portion filled in the first lower recess R10 and a lower portion of the body 113 The second frame 111 may be isolated from the surrounding first frame 111. [

Accordingly, the resin part may be formed of a material having poor adhesion to the first and second conductive layers 321 and 322, a poor wettability, or a material having a low surface tension between the resin part and the first and second conductive layers 321 and 322 The first and second conductive layers 321 and 322 provided in the first and second openings TH1 and TH2 are separated from the first and second openings TH1 and TH2, Can be prevented from diffusing beyond the resin portion filled in the recesses R10 and R20 or the body 113. [ This is because the adhesion between the first and second conductive layers 321 and 322 and the resin part and the body 113 or the wettability between the resin part and the first and second conductive layers 321 and 322, . That is, the material of the first and second conductive layers 321 and 322 may be selected to have good adhesion properties with the first and second frames 111 and 112. The material of the first and second conductive layers 321 and 322 may be selected to have poor adhesion properties with the resin and the body 113.

The first conductive layer 321 may flow over the first opening TH1 in the direction of the region where the resin or the body 113 is provided so that the resin or the body 113 And the first conductive layer 321 can be stably disposed in the region provided with the first opening TH1. When the first conductive layer 321 disposed in the first opening TH1 overflows, the first conductive layer 321 is electrically connected to the outer region of the first lower recess R10 provided with the resin or the body 113, The conductive layer 321 can be prevented from expanding. In addition, the first conductive layer 321 can be stably connected to the lower surface of the first bonding pad 121 in the first opening TH1. Therefore, when the light emitting device package is mounted on the circuit board, the first conductive layer 321 and the second conductive layer 322 can be prevented from being in contact with each other to be short-circuited, and the first and second conductive layers 321 and 322 can be controlled, the amount of the first and second conductive layers 321 and 322 can be very easily controlled.

The first conductive layer 321 may extend from the first opening TH1 to the first lower recess R10. Therefore, the first conductive layer 321 and / or the resin portion may be disposed in the first lower recess R10. The second lower recess R20 may be provided on the lower surface of the second frame 112. [ The second lower recess R20 may be concave on the lower surface of the second frame 112 in the upper surface direction. The second lower recess R20 may be spaced apart from the second opening TH2. For example, a resin part filled in the first and second lower recesses R10 and R20 is formed by the injection molding process of the first frame 111, the second frame 112, and the body 113 In the process.

The resin portion filled in the second lower recess R20 may be disposed around the lower surface area of the second frame 112 that provides the second opening TH2. The lower surface of the second frame 112 providing the second opening TH2 may be disposed in a form of an island in a shape separated from the lower surface of the second frame 112 surrounding the second frame 112. [ 2, the lower surface of the second frame 112, which provides the second opening TH2, has a resin portion filled in the second lower recess R20 and a lower portion of the body 113 May be isolated from the second frame 112 in the vicinity. The second conductive layer 322 overflows from the second opening TH2 in the direction of the region where the resin or the body 113 is provided so that the resin or the body 113 And the second conductive layer 322 can be stably disposed in the region where the second opening portion TH2 is provided. When the second conductive layer 322 disposed in the second opening TH2 overflows, the second conductive layer 322 is electrically connected to the outside region of the second lower recess R20 provided with the resin or the body 113, The conductive layer 322 can be prevented from expanding. In addition, the second conductive layer 322 can be stably connected to the lower surface of the second bonding pad 122 in the second opening portion TH2.

Therefore, when the light emitting device package is mounted on the circuit board, the first conductive layer 321 and the second conductive layer 322 can be prevented from being in contact with each other to be short-circuited, and the first and second conductive layers 321 and 322 can be controlled, the amount of the first and second conductive layers 321 and 322 can be very easily controlled.

Also, the second conductive layer 322 may extend from the second opening TH2 to the second lower recess R20. Therefore, the second conductive layer 321 and / or the resin portion may be disposed in the second lower recess R20. The lower recesses R10 and R20 may be arranged in one or more of the frames 111 and 112. [

<Contact between the electrode of the light emitting element and the conductive layer and non-contact region>

322 are filled with the conductive layers 321 and 322 and cured after the conductive layers 321 and 322 are filled in the openings TH1 and TH2, the bonding pads 321 and 322 of the light emitting device 120 contacted with the conductive layers 321 and 322 by the conductive layers 321 and 322, 121 and 122 are generated. When the conductive layers 321 and 322 attract the bonding pads 121 and 122 of the light emitting device 120, the bonding pads 121 and 122 are partially separated from the light emitting part 123, for example, , Electrode contact is reduced and power supply efficiency may be lowered. This makes it possible to separate the interface between the semiconductor layer and the bonding pads 121 and 122 so that power supplied to the bonding pads 121 and 122 can not be smoothly supplied to the semiconductor layer,

The contact area of the bonding pads 121 and 122 of the light emitting device 120 may be dispersed as a non-contact region or partially contacted with the conductive layers 321 and 322 to reduce the contact area with the conductive layers 321 and 322 . In this case, since the light emitting element 120 secures a sufficient shearing force (DST: Die Shear Strength) by the conductive layers 321 and 322 and the adhesive 130, even if the light emitting element 120 is dispersed or partially contacted with the conductive layers 321 and 322, It is possible to prevent the adhesive strength of the light emitting element 120 from dropping below a predetermined standard.

The embodiment can provide a non-contact area with at least one or both of the bonding pads 121 and 122 of the light emitting device 120 with the conductive layers 321 and 322 in the openings TH1 and TH2. At least one or both of the bonding pads 121 and 122 may include a region that is not in contact with a region where the conductive layers 321 and 322 are in contact with the openings TH1 and TH2. For convenience of explanation, it is a contact region to be in contact with the conductive layers 321 and 322, and a non-contact region can be defined as a non-contact region. The contact region includes one or a plurality of regions, and the non-contact region may include one or a plurality of regions. The contact area may be a part of the lower surface of the bonding pads 121 and 122, and the non-contact area may be an open area without the electrode or an area where an insulating material is formed on the electrode surface.

Referring to FIGS. 4, 8 and 9, the first bonding pad 121 of the light emitting device 120 may include a first contact region 21, 22 and a first non-contact region 23. The first contact areas 21 and 22 may be separated into one or a plurality of areas and the plurality of first contact areas 21 and 22 may be connected to each other by a first connection part 24. [ The first connection part 24 may be in contact with or not in contact with the conductive layers 321 and 322. The first connection part 24 connects power between the plurality of first contact areas 21 and 22 so that the first connection part 24 can be electrically connected to the conductive layers 321 and 322, To provide power to other areas. The first non-contact area 23 may be an empty area or the resin part may be filled.

A first non-contact area 23 in the first bonding pad 121 may be adjacent to or disposed between the first contact areas 21, 22. The area of the first non-contact area 23 may be smaller than the area of the top surface of the first opening TH1. The first non-contact region 23 may be smaller than or equal to the width W11 of the first bonding pad 121 in the X direction or the length W1 of the first bonding pad 121 in the Y direction. The first non-contact region 23 may be disposed in one or a plurality of regions overlapping the first opening portion TH1.

Referring to FIG. 8, the width W12 of the first opening TH1 in the X direction may be smaller than or equal to the length W2 of the Y direction. The width W14 of the second opening TH2 in the X direction may be smaller than or equal to the length W6 of the Y direction. The area of the imaginary line connecting the outer rim of the first bonding pad 121 may be larger than the area of the top surface of the first opening TH1. The area of the imaginary line connecting the outer rim of the second bonding pad 122 may be larger than the area of the top surface of the second opening TH2. The top surface area of the first bonding pad 121 may be smaller than or equal to the top surface area of the second bonding pad 122, but the present invention is not limited thereto.

The second bonding pad 122 of the light emitting device 120 may include a second contact region 31, 32 and a second non-contact region 33. The second non-contact area 33 may be an empty area or the resin part may be filled. The second contact areas 31 and 32 may be separated into one or a plurality of areas and the plurality of second contact areas 31 and 32 may be connected to each other by a second connection part 34. [ The second connection portion 34 may be in contact with or not in contact with the conductive layers 321 and 322. The second connection portion 34 connects the power source between the plurality of second contact regions 31 and 32 so that the second connection portion 34 can be electrically connected to the conductive layers 321 and 322, To provide power to other areas.

The second non-contact area 33 in the second bonding pad 122 may be disposed adjacent to the second contact area 31 or 32 or between the second contact areas 31 and 32. The area of the second non-contact area (33) may be smaller than the area of the top surface of the second opening (TH2). The second non-contact area 33 may be less than or equal to the width W13 of the second bonding pad 122 in the X direction or the length W6 of the second bonding pad 122 in the Y direction. The second non-contact region 33 may be disposed in one or more regions overlapping the second opening portion TH2.

Referring to FIG. 8, the width W12 of the first opening TH1 in the X direction may be smaller than or equal to the length W2 of the Y direction. The width W14 of the second opening TH2 in the X direction may be smaller than or equal to the length W6 of the Y direction. Here, W12 < W11 and W14 < W13 in the X direction and W2 < W1 and W5 < W6 in the Y direction. Accordingly, the contact regions 21 and 22 (31 and 32) between the conductive layers 321 and 322 and the electrodes 121 and 122 can be dispersed through the first and second openings TH1 and TH2, It is possible to disperse the transmitted external force.

As shown in FIG. 4, the first bonding pad 121 is in contact with the first conductive layer 321 filled in the first opening TH1, and the first contact region 21, The contact region 33 may overlap the first opening TH1 and the first conductive layer 321 in the Z direction. Since the first non-contact region 33 corresponds to the first conductive layer 321, the first contact regions 21 and 22 may be separated from the first conductive layer 321. The upper surface of the first conductive layer 321 corresponding to the first non-contact region 23 may have a concave curved surface C1. The first non-contact area 33 may be disposed between the first contact areas 21 and 22 in the Y direction or may be disposed adjacent to the center rather than the Y direction edge part of the light emitting device 120.

The second bonding pad 122 is in contact with the second conductive layer 322 filled in the first opening TH1 and the second contact region 31 and 32 are in contact with the second non- The region 33 may overlap the second opening portion TH2 and the second conductive layer 322 in the Z direction. The second non-contact region 33 corresponds to the second conductive layer 322, so that the second contact region 31 and 32 may be spaced apart from the second conductive layer 322. The upper surface of the second conductive layer 322 corresponding to the second non-contact region 33 may include a concave curved surface C1. The second non-contact region 33 may be disposed between the second contact regions 31 and 32 in the Y direction or may be disposed adjacent to the center rather than the Y direction edge portion of the light emitting device 120.

At least one of the adhesive 130 and the resin part 135 as shown in FIG. 23 may be disposed outside the first and second non-contact areas 23 and 33 of the first and second bonding pads 121 and 122, The flow of the conductive layer can be blocked.

The contact area between the conductive layers 321 and 322 and the bonding pads 121 and 122 may be smaller than the top surface area of each of the openings TH1 and TH2 due to the non-contact area. Each of the contact areas of the bonding pads 121 and 122 may have a circular shape, a polygonal shape, an elliptical shape, or a shape having a curved line or a straight line. The non-contact areas of the bonding pads 121 and 122 may be opened downward and open in at least one of the X direction, the Y direction, and the diagonal direction, and the bottom view shape may be circular, polygonal, Shape.

8 and 9, when the first and second conductive layers 321 and 322 contact the first and second contact regions 21, 22, 31 and 32 of the bonding pads 121 and 122, The second contact regions 21, 22, 31 and 32 are the areas of the portions 20 and 30 overlapping the first and second openings TH1 and TH2. The first and second conductive layers 321 and 322, May be larger than the area of the particles 320 or the powder (hereinafter, referred to as particles) The piclet 320 may include a range of 10 micrometers or more, for example, 10 to 40 micrometers, and a range of 20 to 40 micrometers. When the material of the particle 320 is out of the above range, the printability and wettability of the solder paste filled in the openings TH1 and TH2 may be lowered and high reliability can not be maintained.

The areas of the first and second contact areas 21 and 22 overlapping with the first and second openings TH1 and TH2 of the bonding pads 121 and 122, ) Of the surface area of the substrate. For example, when the radius of the particle (320) is r, the minimum area of the contact areas (21,22,32,33) in contact with each of the first and second conductive layers (321 322) is obtained as π × r ² May be at least twice the area of the particle, for example, the area of n x pi x r2, and n &gt; / = ² or more. Since the first and second contact areas 21, 22, 31 and 32 of the first and second bonding pads 121 and 122 are provided at least twice the area of the picl 320, The wettability can be improved and a high reliability can be maintained.

The minimum area overlapping the first and second openings TH1 and TH2 in the first and second non-contact areas 23 and 33 of the bonding pads 121 and 122 may be 1.5 times or more the size of the particle 320 have. For example, when the radius of the particles 320, the r, of the first and second conductive layers (321 322) the area determined by the minimum area of π × r ² of the non-contact areas (23,33) respectively and the non-contact 1.5 times or more. Since the first and second non-contact regions 23 and 33 of the first and second bonding pads 121 and 122 are provided at least 1.5 times the area of the picl 320, the first and second conductive layers 321 and 322 Can reduce the contact area between the bonding pads 121 and 122 on the openings TH1 and TH2 and disperse the pulling force of the bonding pads 121 and 122, And reliability can be improved.

8, the widths W31, W41 and W42 of the contact regions 21, 22, 31 and 32 in the Y direction, when the non-contact regions 23 and 33 in the bonding pads 121 and 122 are formed in the X direction, May be at least two times the particle diameter, and may range, for example, from two to four times. The widths W31, W41 and W42 may be in the range of 40 micrometers or more, for example, 40 to 100 micrometers. The widths W32 and W43 in the Y direction of the non-contact areas 23 and 33 may be at least 1.5 times the diameter of the particle diameter. The widths W32 and W43 of the non-contact areas 23 and 33 in the Y direction may be in the range of 30 micrometers or more, for example, 30 micrometers to 80 micrometers. The widths of the non-contact areas 23 and 33 in the X direction may be equal to or greater than the widths W32 and W43 in the Y direction. In the case where the contact areas 21, 22, 31 and 32 of the bonding pads 121 and 122 and the non-contact areas 23 and 33 have the widths described above, It is possible to disperse the pulling force of the bonding pads 121 and 122, thereby reducing the defects of the bonding pads 121 and 122 and improving the reliability.

As shown in FIG. 6, a protective layer 129 may be disposed around the first bonding pad 121. The protective layer 129 may expose a region that does not cover the bottom surface of the first bonding pad 121, for example, a region facing the first frame 111. The protective layer 129 may have a thickness smaller than the thickness of the first bonding pad 121 and may support and protect the first bonding pad 121. The adhesive force F1 or F2 between the first conductive layer 321 and the first bonding pad 121 may be dispersed in the first opening TH1. The non-contact region 23 of the first bonding pad 121 may be disposed on the protective layer 129 to face the conductive layers 321 and 322. The second bonding pad 122 and the protective layer 129 disposed around the second bonding pad 122 may be the same as those described above and will be described with reference to the above description.

As shown in FIG. 7, a protective layer 129 may be disposed around the first bonding pad 121. The protective layer 129 may cover the outer circumference of the bottom surface of the first bonding pad 121 and expose an inner region of the bottom surface of the first bonding pad 121. When the first conductive layer 321 contacts the bottom surface of the first bonding pad 121, the protective layer 129 may support the first bonding pad 121. Here, the protective layer 129 may include a portion that is in partial contact with the first conductive layer 321, or a portion that is not in contact with the first conductive layer 321 or a portion that is not in contact with the first conductive layer 321. The adhesive force F1 or F2 between the first conductive layer 321 and the first bonding pad 121 may be dispersed in the first opening TH1. The area of the non-contact region 23 can be adjusted by the protective layer 129 disposed on the first bonding pad 121. The non-contact region 23 of the first bonding pad 121 may be disposed on the passivation layer 29 to face the first conductive layer 321. The second bonding pad 122 and the protective layer 129 disposed around the second bonding pad 122 will be described with reference to the above description, and the above description will be referred to.

4 and 5, when the conductive layers 321 and 322 are filled in the first and second openings TH1 and TH2, the conductive layers 321 and 322 are filled with the contact areas 21 and 22 of the bonding pads 121 and 122 , 31,32 and may leak laterally through the non-contact areas 23,33. For example, as shown in FIG. 8, the conductive layers 321 and 322 may flow out in the lateral directions F3 and F4 in which the non-contact areas 23 and 33 of the bonding pads 121 and 122 are opened. 3, the adhesive 130 contacts between the light emitting device 120 and the body 113 to prevent the conductive layers 321 and 322 from leaking toward the adhesive 130.

The connection portions 124 and 134 of the bonding pads 121 and 122 may be adjacent to the frames 111 and 112 or may be bonded to the conductive layers 321 and 322 to prevent the conductive layers 321 and 322 from flowing out as shown in FIG. have.

10 shows another example of the opening and the electrode. The length W2 in the Y direction of the first opening TH1 may be greater than the length W1 of the first bonding pad 121 in the Y direction. The length W5 of the second opening TH2 in the Y direction may be greater than the length W6 of the second bonding pad 122 in the Y direction. At least one of the first and second bonding pads 121 and 122 may have a length W1 and W5 in the Y direction smaller than a length W2 and W6 in the Y direction of at least one of the first and second openings TH1 and TH2 have. In this case, the non-contact areas of the bonding pads 121 and 122 can be further increased.

11, at least one of the plurality of electrodes 121 has an inner contact area 21A and an outer contact area 21B, and the inner contact area 21A and the outer contact area 21B are formed, The non-contact region 23 can be disposed between the contact regions. The non-contact area 23 may separate the inner and outer contact areas 21A and 21B. If the bonding pads 121 are separated into the inner and outer contact regions 21A and 21B, they may be connected to each other in different patterns. The electrode may be applied to the first and second electrodes as shown in FIG.

As shown in FIG. 12, the first bonding pad 121 may include a non-contact region 123 between the inner and outer contact regions 121A and 121B. In this case, the external contact area 121B may be electrically connected to the frame 111. [ The second bonding pad 122 may be disposed in a non-contact area 33 between the inner and outer contact areas 31A and 32A and may be electrically connected to the frame 122. [ In this case, the contact areas 121A, 122A, 131A, and 132A of the first and second bonding pads 121 and 122 may be larger than the contact areas of the first and second bonding pads 121 and 122 with the first and second conductive pads 111 and 112, respectively. Accordingly, even if the contact regions 121A, 122A, 131A, and 132A of the bonding pads 121 and 122 are separated from each other, a reduction in electrical characteristics can be prevented and a pulling force of the electrodes can be reduced. The width of the outer contact areas 21B and 32A may be twice or more the diameter of the fiber, and the outer contact areas 21B and 32A may be stably connected to the frames 111 and 112.

The top surface area of the first bonding pad 121 may be equal to or less than the top surface area of the second bonding pad 122. The top surface area of the first opening TH1 may be equal to or smaller than the top surface area of the second opening TH2.

Referring to FIG. 13, at least one of the plurality of electrodes may be connected to a plurality of contact areas 21A and 21B by a connection part 24. The position of the connecting portion 24 may be a center position of the plurality of contact areas 21A and 21B, but is not limited thereto. The connection portion 24 may extend in a direction perpendicular or inclined to the contact regions 21A and 21B, but is not limited thereto. The connection portion 24 may be one or more. The connection portion 24 may be in contact with the conductive layers 321 and 322. The shape of the electrode can be applied as shown in Fig.

14, the first bonding pad 121 may include a connection portion 24 between a plurality of contact regions 21A and 21B and a non-contact region 23 on both sides of the connection portion 24. [ have. The first bonding pad 121 may be connected to a connection portion 24 between a plurality of contact regions 21A and 21B to be in contact with the conductive layer. The non-contact region 23 of the first bonding pad 121 may be separated by the connection portion 24 on both sides. The minimum width of the connecting portion 24 may be larger or smaller than the particle diameter, but the present invention is not limited thereto. The first bonding pad 121 may be in contact with the conductive layer) in which the connection portions 24 are disposed between the plurality of contact regions 21A and 21B, respectively. The width of the first bonding pad 121 in the X direction and the length in the Y direction may be larger than the opening.

The second bonding pad 122 may include a connection portion 34 between a plurality of contact regions 31A and 31B and a non-contact region 33 on both sides of the connection portion 34. [ The second bonding pad 122 is provided with a connection portion 34 between a plurality of contact regions 31A and 31B and may be in contact with the conductive layer. The width of the second bonding pad 122 in the X direction and the length in the Y direction may be larger than the opening.

The top surface area of the first bonding pad 121 may be equal to or less than the top surface area of the second bonding pad 122. The top surface area of the first opening TH1 may be equal to or smaller than the top surface area of the second opening TH2.

15 to 18 are modifications of the electrode according to the embodiment.

As shown in FIG. 15, the bonding pads 121 and 122 may be connected to the inner contact area 25 and the outer contact area 26, respectively, in the diagonal direction by the connecting part 27. At least two non-contact areas 28 may be arranged in the outer contact area 26 by a connecting part 27. The minimum width of the non-contact region 28 may be at least 1.5 times the particle diameter, and the minimum width of the contact regions 25, 26 may be at least twice the particle diameter. By the dispersed contact regions 25 and 26, the printability and wettability of the solder paste as the conductive layer can be improved, and high reliability can be maintained. The inner and outer contact areas 25 and 26 may include circular or polygonal shapes.

As shown in FIG. 16, the bonding pads 121 and 122 are arranged in the corner portions of the polygonal shape of the plurality of contact regions 35 and 36, and the contact regions 35 and 36 can be connected to each other through the connection portion 37. The contact regions 35 and 36 may be circular, polygonal, or elliptical. Each of the contact areas 35 and 36 may include a shape having a curved line or a straight line. The non-contact region 37 may be between the contact regions 35 and 36. The minimum width of the non-contact region 37 may be at least 1.5 times the particle diameter, and the minimum width of the contact regions 35 and 36 may be at least twice the particle diameter. The printability and wettability of the solder paste as the conductive layers 321 and 322 can be improved and high reliability can be maintained.

As shown in FIG. 17, the bonding pads 121 and 122 may have a plurality of contact areas 41 and 42 arranged in a matrix, and the contact areas 41 and 42 may be connected to the connection part 44. The non-contact region 43 may be between the contact regions 41 and 42. The non-contact region 43 may be separated by two or three or more connection portions 44. The contact areas 41 and 42 are arranged to surround at least three sides of the non-contact area 43 and the non-contact area 43 may be smaller than the area of the contact areas 41 and 42.

The minimum width of the non-contact area 43 may be at least 1.5 times the particle diameter, and the minimum width of the contact areas 41 and 42 may be at least twice the particle diameter. By disposing the contact areas 35 and 36 around the non-contact area 38, the printability and wettability of the solder paste can be improved when bonded to the conductive layer, and high reliability can be maintained.

As shown in FIG. 18, the bonding pads 121 and 122 may be provided with the contact regions 45 around the non-contact regions 47. The contact region 45 cuts off the periphery of the non-contact region 47 and may be disposed larger than the area of the non-contact region 47. The minimum width of the non-contact area 47 may be at least 1.5 times the particle diameter, and the minimum width of the contact area 45 may be at least twice the particle diameter. By disposing the contact region 45 around the non-contact region 47, the printability and wettability of the solder paste can be improved when bonded to the conductive layer, and high reliability can be maintained.

The first and second bonding pads 121 and 122 may be connected to the conductive layer through the contact region and separated from the conductive layer through the non-contact region. The contact region may be electrically connected to the frame through the conductive layer. In this case, the contact area of the first and second bonding pads 121 and 122 may be larger than the contact area of the first and second bonding pads 121 and 122 with the conductive layer. Accordingly, even if the contact regions of the respective electrodes are separated, deterioration of the electrical characteristics can be prevented, and the force of attracting the electrodes can be reduced. The width of the outer contact area may be at least twice the diameter of the fiber, so that it can be stably connected to the frame.

As another example, the light emitting device package 100 according to the embodiment may include the resin part 135 as shown in FIG. The resin part 135 may be disposed between the first frame 111 and the light emitting device 120. The resin part 135 may be disposed between the second frame 112 and the light emitting device 120. The resin part 135 may be provided on the bottom surface of the cavity C provided in the package body 110.

The resin part 135 may be disposed on a side surface of the first bonding pad 121. The resin part 135 may be disposed on a side surface of the second bonding pad 122. The resin part 135 may be disposed under the semiconductor layer 123.

For example, the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicone-based material have. The resin part 135 may be a reflecting part that reflects light emitted from the light emitting device 120, and may be a resin including a reflective material such as TiO ₂ or a white silicone. .

The resin part 135 may be disposed below the light emitting device 120 to perform a sealing function. In addition, the resin part 135 can improve adhesion between the light emitting device 120 and the first frame 111. The resin part 135 can improve the adhesion between the light emitting device 120 and the second frame 112.

The resin part 135 may seal the periphery of the first bonding pad 121 and the second bonding pad 122. The resin part 135 may be formed on the light emitting device 120 such that the first conductive layer 321 and the second conductive layer 322 are out of the first opening area TH1 and the second opening area TH2, And can be prevented from being diffused and moved outwardly. When the first and second conductive layers 321 and 322 are diffused and moved in the outer surface direction of the light emitting device 120, the first and second conductive layers 321 and 322 are electrically connected to the active layer of the light emitting device 120 Which can lead to failure due to a short circuit. Accordingly, when the resin part 135 is disposed, the first and second conductive layers 321 and 322 and the active layer can be prevented from being short-circuited, thereby improving the reliability of the light emitting device package according to the embodiment.

When the resin part 135 includes a material having a reflective property such as white silicon, the resin part 135 may reflect light emitted from the light emitting element 120 toward the upper part of the package body 110 The light extraction efficiency of the light emitting device package 100 can be improved.

According to another embodiment of the light emitting device package according to the embodiment of the present invention, the resin part 135 is not provided separately, and the molding part 140 is formed between the first frame 111 and the second frame 112, respectively.

24 is another example of the light emitting device package according to the embodiment.

Referring to FIG. 24, the light emitting device package may have a first upper recess R3 on the first frame 111 and a second upper recess R4 on the second frame 112. In FIG. The first upper recess R3 may be provided on the upper surface of the first frame 111. [ The first upper recess R3 may be recessed from the upper surface of the first frame 111 in a downward direction. The first upper recess R3 may be spaced apart from the first opening TH1. The first upper recess R3 may be provided in a top view shape adjacent to three sides of the first bonding pad 121. [ For example, the first upper recess R3 may be provided in a shape to cover at least three sides of the first bonding pad 121. [

The second upper recess R4 may be provided on the upper surface of the second frame 112. [ The second upper recess R4 may be recessed in a downward direction from the upper surface of the second frame 112. [ The second upper recess R4 may be spaced apart from the second opening TH2. The second upper recess R4 may be provided such that a top view shape is provided adjacent to three sides of the second bonding pad 122. As an example, the second upper recess R4 may be formed along the three sides of the second bonding pad 122.

The resin part 135 may be provided to the first upper recess R3 and the second upper recess R4. The resin part 135 may be disposed on a side surface of the first bonding pad 121. The resin part 135 may be provided to the first upper recess R3 and extended to a region where the first bonding pad 121 is disposed. The resin part 135 may be disposed under the semiconductor layer 123.

The distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 may be several hundred micrometers or less. For example, the distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 may be equal to or less than 200 micrometers.

The distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 is set to a value equal to the distance L11 between the end of the first upper recess R3 and the tip of the light emitting element 120, .

The distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 is set such that the resin portion 135 applied to the first upper recess R3 1 bonding pad 121 is disposed in the region where the bonding pad 121 is disposed.

The resin part 135 may be disposed on a side surface of the second bonding pad 122. The resin part 135 may be provided to the second upper recess R4 and extended to a region where the second bonding pad 122 is disposed. The resin part 135 may be disposed under the semiconductor layer 123.

Also, the resin part 135 may be provided on the side surface of the semiconductor layer 123. It is possible to effectively prevent the first and second conductive layers 321 and 322 from moving to the side surface of the semiconductor layer 123 by disposing the resin part 135 on the side surface of the semiconductor layer 123. [ When the resin part 135 is disposed on the side surface of the semiconductor layer 123, the resin part 135 can be disposed under the active layer of the semiconductor layer 123, Can be improved.

The first upper recess R3 and the second upper recess R4 may provide sufficient space for the resin part 135 to be provided. For example, the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicone-based material have. In addition, the resin part 135 may include a reflective material, for example, and may include a white silicone including TiO ₂ and / or Silicone.

The resin part 135 may be disposed below the light emitting device 120 to perform a sealing function. In addition, the resin part 135 can improve adhesion between the light emitting device 120 and the first frame 111. The resin part 135 can improve the adhesion between the light emitting device 120 and the second frame 112.

The resin part 135 may seal the periphery of the first bonding pad 121 and the second bonding pad 122. The resin part 135 may be formed on the light emitting device 120 such that the first conductive layer 321 and the second conductive layer 322 are out of the first opening area TH1 and the second opening area TH2, And can be prevented from being moved.

When the resin part 135 includes a material having a reflection characteristic such as white silicon, the resin part 135 reflects light provided from the light emitting element 120 toward the upper part of the package body 110 The light extraction efficiency of the light emitting device package 100 can be improved.

In the light emitting device package, the first conductive layer 321 and the second conductive layer 322 are formed first in the opening portion, the resin portion 135 and the molding portion 140 are formed, The first conductive layer 321 and the second conductive layer 322 may be formed on the backside of the substrate 135 and the molding part 140. Referring to FIG. According to another embodiment of the method of manufacturing a light emitting device package according to the embodiment, only the molding part 140 may be formed in the cavity of the package body 110 without forming the resin part 135.

The light emitting device package 100 according to the embodiment described above may be mounted on a submount, a circuit board, or the like. However, since a conventional light emitting device package is mounted on a submount, a circuit board or the like, a high temperature process such as a reflow process can be applied. At this time, in the reflow process, a re-melting phenomenon occurs in the bonding region between the lead frame and the light emitting device provided in the light emitting device package, so that the stability of electrical connection and physical coupling can be weakened. However, according to the light emitting device package and the method of manufacturing the light emitting device package according to the embodiment, the first bonding pad and the second bonding pad of the light emitting device according to the embodiment can receive driving power through the conductive layer disposed in the opening portion . And, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material.

Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main substrate through a reflow process, re-melting phenomenon does not occur, so that electrical connection and physical bonding force are not deteriorated There is no advantage.

In addition, according to the light emitting device package 100 according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.

As a result, the selection range for the material constituting the body 113 can be widened. According to the embodiment, the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials. For example, the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.

<Light source module>

Referring to FIG. 25, one or a plurality of light emitting device packages 100 may be disposed on a circuit board 310 in the light source module 300 according to the embodiment.

The circuit board 310 may include a first pad 311, a second pad 312, and a substrate 313. The substrate 313 may be provided with a power supply circuit for controlling the driving of the light emitting device 120.

The first bonding pad 121 is connected to the first pad 311 of the circuit board 310 through the first conductive layer 321 of the first opening TH1 of the light emitting device package 100, And the circuit board 310 may be connected to the second pad 312 through the second conductive layer 322 of the second opening TH2 so that power may be connected to the second bonding pad 122. [ The substrate 313 of the circuit board 310 may be a flexible or non-flexible member.

The package body 110 may be disposed on the circuit board 310. The first pad 311 and the first bonding pad 121 may be electrically connected to each other. The second pad 312 and the second bonding pad 122 may be electrically connected to each other. The first pad 311 and the second pad 312 may include a conductive material. For example, the first pad 311 and the second pad 312 may be formed of a material selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, At least one selected material or alloy thereof. The first pad 311 and the second pad 312 may be provided as a single layer or a multilayer.

When the first frame 111 and the second frame 112 are formed as an insulating frame, power may be supplied through the first and second conductive layers 321 and 322. When the first frame 111 and the second frame 112 are formed of a conductive frame, power may be supplied through the first and second conductive layers 321 and 322 and the first and second frames 111 and 112.

26 is another example of a light source module having a light emitting device package according to the embodiment.

Referring to FIG. 26, one or more light emitting device packages 100 may be disposed on the circuit board 410. The circuit board 410 may include a first pad 411, a second pad 412, and a substrate 413. The substrate 313 may be provided with a power supply circuit for controlling the driving of the light emitting device 120.

The package body 110 may be disposed on the circuit board 410. The first pad 411 and the first bonding pad 121 may be electrically connected to each other. The second pad 412 and the second bonding pad 122 may be electrically connected.

According to the embodiment, the first pad 411 of the circuit board 410 and the first conductive layer 321 may be electrically connected. Also, the second pad 412 of the circuit board 410 and the second conductive layer 322 may be electrically connected. The first pad 411 may be electrically connected to the first frame 111. Also, the second pad 412 may be electrically connected to the second frame 112. According to the embodiment, a separate bonding layer may be additionally provided between the first pad 411 and the first frame 111. Further, a separate bonding layer may be additionally provided between the second pad 412 and the second frame 112. According to the light emitting device package of the embodiment, the first bonding pad and the second bonding pad of the light emitting device can receive driving power through a conductive layer disposed in the opening. And, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material. The light emitting device package according to the embodiment has an advantage that the electrical connection and the physical bonding force are not deteriorated because the re-melting phenomenon does not occur even when the light emitting device package according to the embodiment is bonded to the main substrate through a reflow process. According to the light emitting device package according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.

The light emitting device package 100 according to the embodiment may be mounted on a submount, a circuit board, or the like. However, since a conventional light emitting device package is mounted on a submount, a circuit board or the like, a high temperature process such as a reflow process can be applied. At this time, in the reflow process, re-melting phenomenon occurs in the bonding region between the frame and the light emitting device provided in the light emitting device package, so that the stability of electrical connection and physical coupling can be weakened, And the optical and electrical characteristics and reliability of the light emitting device package may be deteriorated. However, according to the light emitting device package according to the embodiment, the first bonding pad and the second bonding pad of the light emitting device according to the embodiment can receive driving power through a conductive layer disposed in the opening. And, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material. Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main substrate through a reflow process, re-melting phenomenon does not occur, so that electrical connection and physical bonding force are not deteriorated There is no advantage.

&Lt; Embodiment 2 >

27 and 28 are side sectional views of a light emitting device package according to the second embodiment.

As shown in FIGS. 27 and 28, the light emitting device package 300 may include a body 110B and a light emitting device 120. FIG.

The body 110B may provide a concave cavity C at the top. The cavity (C) can reflect the incident light upward. The cavity C may have an inclined side surface with respect to the bottom surface. The body 110B may be formed of a material such as polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide 9T, silicone, epoxy molding compound, (SMC), ceramics, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. Further, the body (110B) may include a high refractive index filler, such as TiO ₂ and SiO _2.

The light emitting device 120 may include a first bonding pad 121, a second bonding pad 122, and a light emitting portion 123 having a semiconductor layer. The configuration of the light emitting device 120 will be described with reference to the description of the embodiments disclosed above. As shown in FIGS. 29 and 30, the first bonding pads 1172 may be provided with different sizes of contact regions depending on regions. 30 shows an example in which the shape and size of the first and second bonding pads 1172 and 1171 of FIG. 29 are modified to change the sizes of the contact area and the non-contact area.

The light emitting device 120 may be disposed on the body 110. The first bonding pad 121 may be disposed on the lower surface of the light emitting device 120. The second bonding pad 122 may be disposed on the lower surface of the light emitting device 120.

The body 110B may include a plurality of openings, for example, a first opening TH1 and a second opening TH2. The first opening TH1 may be disposed below the first bonding pad 121 of the light emitting device 120 and may penetrate through a lower portion of the body 110B. The first opening TH1 may be provided in a state of overlapping with the first bonding pad 121 of the light emitting device 120. [ The second opening portion TH2 may be disposed under the second bonding pad 122 of the light emitting device 120 and may be provided through the lower portion of the body 110B. The second opening portion TH2 may be provided to overlap with the second bonding pad 122 of the light emitting device 120. [

At least one or both of the first bonding pad 121 and the second bonding pad 122 may include the contact region and the non-contact region described above, and a detailed description will be made with reference to the above description . For example, the first bonding pad 121 may include first contact regions 21 and 22 and first non-contact regions 33 and 23, as shown in FIG.

The body 110B may include a recess (R). The recess R may be recessed from the bottom surface of the cavity C to the lower surface of the body 110B. The recess R may be disposed below the light emitting device 120 and may overlap the region between the first and second bonding pads 121 and 122.

The adhesive 130 may be disposed in the recess R. [ The adhesive 130 may be disposed between the light emitting device 120 and the bottom surface of the cavity C. The adhesive 130 may be disposed between the first bonding pad 121 and the second bonding pad 122. For example, the adhesive 130 may be disposed in contact with a side surface of the first bonding pad 121 and a side surface of the second bonding pad 122. The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 110B. The adhesive 130 may be placed in direct contact with the bottom surface of the cavity C of the body 110, for example. In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120. For example, the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material .

When the light is emitted to the lower surface of the light emitting device 120, the adhesive 130 may provide a light diffusion function between the light emitting device and the body. When the light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the adhesive 130 may improve the light extraction efficiency of the light emitting device package 300 by providing a light diffusion function.

According to the embodiment, the depth T1 of the recess R may be smaller than the depth T2 of the openings TH1 and TH2. The depth T1 of the recess R may be determined in consideration of the adhesive force of the adhesive 130. The depth T1 of the recess R may be determined by taking into consideration the stable strength of the mount 111 and / or by causing cracks in the light emitting device package 300 due to heat emitted from the light emitting device 120. [ Can be determined not to occur.

The recess R may provide a suitable space under which a kind of underfill process may be performed under the light emitting device 120. By way of example, the depth T1 of the recess R may be provided at 40 micrometers or more, for example, 40 to 60 micrometers.

For example, 180 to 220 micrometers of the first and second openings TH1 and TH2. By way of example, the depth (T2-T1) may be selected to be at least 100 micrometers or more. According to the embodiment, the ratio of the T1 depth to the T2 depth (T2 / T1) may be provided from 2 to 10. As an example, if the depth of T2 is provided at 200 micrometers, the depth of T1 may be provided at 20 micrometers to 100 micrometers.

The length in the Y direction of the recess R may be greater than the length of the first and second openings TH1 and TH2. The Y-direction length of the first and second openings TH1 and TH2 may be smaller than the length of the light emitting device 120 in the short axis direction. The length of the recess R in the Y direction may be greater or smaller than the length of the light emitting device 120 in the minor axis direction.

The conductive layers 411 and 412 may be disposed on the first and second openings TH1 and TH2 and the conductive layers 411 and 412 may be connected to the first and second bonding pads 121 and 122, . The conductive layers 411 and 412 may include one material or an alloy thereof selected from the group consisting of Ag, Au, Pt, Sn, Cu, Zn, In, Bi, The conductive layers 411 and 412 are solder pastes, and may be formed of a powder or a mixture of particles and flux. The solder paste may include Sn-Ag-Cu, and the weight percentage of each metal may be varied. For example, the first conductive layer 411 and the second conductive layer 412 may be formed using a conductive paste. The conductive paste may include a solder paste, a silver paste, or the like, and may be composed of a multi-layer or an alloy composed of different materials or a single layer.

These conductive layers 411 and 412 may be in contact with the contact areas of the bonding pads 121 and 122 on the openings TH1 and TH2 and may be in non-contact with the non-contact areas. This configuration will be described with reference to the description of the first embodiment. Since the conductive layers 411 and 412 have a non-contact area with the bonding pads 121 and 122 on the openings TH1 and TH2, damage to the bonding pads 121 and 122 can be prevented by the conductive layers 411 and 412. That is, the conductive layers 411 and 412 can disperse the pulling force of the bonding pads 121 and 122, thereby preventing electrode damage.

The package of Figs. 28 and 29 described above may include the resin portion described above, or may include the resin portion and the upper recess.

&Lt; Light emitting element &

In the light emitting device package according to the embodiment, for example, a flip chip light emitting device may be provided. For example, the flip chip light emitting device may be provided as a transmissive flip chip light emitting device that emits light in six plane directions, or may be provided as a reflective flip chip light emitting device that emits light in five plane directions. The reflection type flip chip light emitting device in which light is emitted in the five-sided direction may have a structure in which an insulating layer is disposed in a direction close to the body. For example, the reflection type flip chip light emitting device may include an insulating insulating layer (e.g., a Distributed Bragg Reflector) and / or a conductive insulating layer (e.g., Ag, Al, Ni, . The flip chip light emitting device may include a first bonding pad electrically connected to the first conductive semiconductor layer and a second bonding pad electrically connected to the second conductive semiconductor layer, And may be provided as a horizontal light emitting device in which light is emitted between the first bonding pad and the second bonding pad.

The flip chip light emitting device having the six-sided light emitting device may further include a transmission type flip chip light emitting device including both a reflection region in which an insulating layer is disposed between the first and second bonding pads and a transmission region in which light is emitted, Lt; / RTI &gt;

Here, the transmissive flip chip light emitting device refers to a device that emits light to the top surface, four side surfaces, and six surfaces of the bottom surface. In addition, the reflection type flip chip light emitting device means an element that emits light to the upper surface and the four side surfaces.

Hereinafter, an example of a flip chip light emitting device applied to a light emitting device package according to an embodiment of the present invention will be described with reference to the accompanying drawings.

29 to 31, a light emitting device according to an embodiment of the present invention will be described. 29 is a plan view showing a light emitting device according to an embodiment of the present invention, FIG. 30 shows an example in which the sizes of the first and second electrodes in FIG. 29 are differently arranged, FIG. 31 (a) AA lines of the first bonding pad and the second bonding pad.

29, a first electrode electrically connected to the first bonding pad 1172 and a second electrode electrically connected to the second bonding pad 1171, which are disposed under the first bonding pad 1172 and the second bonding pad 1171, The second electrode being electrically connected to the second electrode.

The light emitting device 1100 according to the embodiment may include the light emitting structure 1110 disposed on the substrate 1105 as shown in FIG. The substrate 1105 may be selected from the group consisting of a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. For example, the substrate 1105 may have a concavo-convex pattern on its upper surface, and may be provided as a patterned sapphire substrate (PSS), for example.

The light emitting structure 1110 may include a first conductive semiconductor layer 1111, an active layer 1112, and a second conductive semiconductor layer 1113. The active layer 1112 may be disposed between the first conductive semiconductor layer 1111 and the second conductive semiconductor layer 1113. For example, the active layer 1112 may be disposed on the first conductive semiconductor layer 1111, and the second conductive semiconductor layer 1113 may be disposed on the active layer 1112.

According to an embodiment, the first conductivity type semiconductor layer 1111 may be provided as an n-type semiconductor layer, and the second conductivity type semiconductor layer 1113 may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity type semiconductor layer 1111 may be provided as a p-type semiconductor layer, and the second conductivity type semiconductor layer 1113 may be provided as an n-type semiconductor layer.

The light emitting device 1100 according to the embodiment may include an ohmic contact layer. The ohmic contact layer can improve current diffusion and increase light output. For example, the ohmic contact layer may include at least one selected from the group consisting of a metal, a metal oxide, and a metal nitride. The ohmic contact layer may include a light-transmitting material. The ohmic contact layer may be formed of, for example, ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO ITO, Ni / IrOx / Au, Ni / IrOx / ITO, IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx / Au / ITO, Pt, Ni, Au, Rh, and Pd.

The light emitting device 1100 according to the embodiment may include an insulating layer, as shown in FIGS. 29 and 31. The insulating layer may include a first insulating layer and a second insulating layer. The insulating layer may be disposed on the ohmic contact layer. The first insulating layer may include a plurality of second openings exposing the upper surface of the first conductive type semiconductor layer 1111. The second insulating layer may include a first opening exposing the ohmic contact layer. The second insulating layer may include a plurality of first openings disposed on the ohmic contact layer. Light emitted between the first insulating layer and the second insulating layer may be incident on the adhesive 130 disposed in the recess region. The light emitted in the lower direction of the light emitting device can be optically diffused by the adhesive 130 (FIG. 3), and the light extraction efficiency can be improved. Another insulating layer may be further disposed between the first and second insulating layers to reflect light incident on the adhesive.

At least one of the insulating layers may be provided as an insulating insulating layer. For example, the insulating insulating layer may be provided as a DBR (Distributed Bragg Reflector) layer. The insulating insulating layer may be provided as an ODR (Omni Directional Reflector) layer. Also, the insulating insulating layer may be provided by stacking a DBR layer and an ODR layer.

The light emitting device 1100 according to the embodiment may include a first electrode and a second electrode, as shown in FIG. The first electrode may be electrically connected to the first conductivity type semiconductor layer 1111 within the second opening. The first electrode may be disposed on the first conductive type semiconductor layer 1111. The first electrode is electrically connected to the second conductivity type semiconductor layer 1113 through the active layer 1112 and the first conductivity type semiconductor layer 1111, (Not shown). The first electrode may be electrically connected to the upper surface of the first conductive type semiconductor layer 1111 through a second opening provided in the first insulating layer. The second opening and the recess may vertically overlap. For example, the first electrode may be formed in the plurality of recessed regions, as shown in FIGS. 29 and 31, so that the first conductive semiconductor layer 1111 ). &Lt; / RTI &gt;

The second electrode may be electrically connected to the second conductive type semiconductor layer 1113. The second electrode may be disposed on the second conductive type semiconductor layer 1113. According to the embodiment, the ohmic contact layer may be disposed between the second electrode and the second conductivity type semiconductor layer 1113.

The second electrode may be electrically connected to the second conductive type semiconductor layer 1113 through a first opening provided in the second insulating layer. For example, the second electrode may be electrically connected to the second conductivity type semiconductor layer 1113 through the ohmic contact layer in a plurality of P regions, as shown in FIG. The second electrode may be in direct contact with the upper surface of the ohmic contact layer through a plurality of first openings provided in the second insulating layer in a plurality of P regions, as shown in FIG.

According to the embodiment, as shown in FIGS. 28 and 20, the first electrode and the second electrode may have polarities with each other, and may be disposed apart from each other. The first electrode may be provided in a plurality of line shapes as an example. Also, the second electrode may be provided in a plurality of line shapes as an example. The first electrode may be disposed between a plurality of neighboring second electrodes. The second electrode may be disposed between a plurality of neighboring first electrodes.

When the first electrode and the second electrode have different polarities, they may be arranged in different numbers of electrodes. For example, when the first electrode is an n-electrode and the second electrode is a p-electrode, the number of the second electrodes may be greater than the first electrode. When the electric conductivity and / or the resistance of the second conductivity type semiconductor layer 1113 and the first conductivity type semiconductor layer 1111 are different from each other, the light emitting structure 1110 may be separated by the first electrode and the second electrode, So that the optical characteristics of the light emitting device can be improved.

The first electrode and the second electrode may be formed as a single layer or a multilayer structure. For example, the first electrode and the second electrode may be ohmic electrodes. For example, the first electrode and the second electrode may include at least one selected from the group consisting of ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, , Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, or an alloy of two or more of them.

The light emitting device 1100 according to the embodiment may include a protective layer on its surface. The protective layer may include a plurality of third openings exposing the second electrode, and may be disposed corresponding to the plurality of branch electrodes provided on the second electrode. The third opening may be a branch electrode according to an embodiment, and the region covered with the protective layer may be a non-contact region.

The protective layer may include a plurality of fourth openings exposing the first electrode. The plurality of fourth openings may be arranged corresponding to the plurality of branched electrodes provided on the first electrode. The protective layer may be disposed on the insulating layer. By way of example, the protective layer may be provided as an insulating material. For example, the protective layer can be made of Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y And at least one material selected from the group consisting of:

29 and 31 (a) and 31 (b), the light emitting device 1100 according to the embodiment includes a first bonding pad 1172 and a second bonding pad 1171 disposed on the protective layer, . &Lt; / RTI &gt; The first bonding pad 1172 may be disposed on the first insulating layer. In addition, the second bonding pad 1171 may be disposed on the second insulating layer. The first bonding pad 1172 may be in contact with the upper surface of the first electrode through a plurality of the fourth openings provided in the protective layer at a plurality of branched electrodes. The plurality of branch regions may be arranged to be vertically offset from the second opening. When the plurality of branch electrodes and the second openings are vertically offset from each other, a current injected into the first bonding pad 1172 can be uniformly distributed in the horizontal direction of the first electrode, A current can be injected evenly.

The second bonding pad 1171 may be in contact with the upper surface of the second electrode through the plurality of third openings. When the plurality of PB regions and the plurality of first openings are not vertically overlapped, a current injected into the second bonding pad 1171 can be uniformly distributed in the horizontal direction of the second electrode, Current can be evenly injected in the PB region.

According to the light emitting device 1100 of the embodiment, the first bonding pad 1172 and the first electrode may be in contact with each other in the plurality of fourth opening regions. Also, the second bonding pad 1171 and the second electrode may be in contact with each other in a plurality of regions. Accordingly, since power can be supplied through a plurality of regions, the current dispersion effect can be generated according to the increase of the contact area and the dispersion of the branch electrodes, and the operation voltage can be reduced.

31, the first insulating layer is disposed under the first electrode, and the second insulating layer is disposed under the second electrode, as shown in FIG. 31. According to the light emitting device 1100 according to the embodiment, do. Accordingly, the first insulating layer and the second insulating layer reflect light emitted from the active layer 1112 of the light emitting structure 1110 to minimize the occurrence of light absorption at the first electrode and the second electrode, (Po) can be improved. For example, the first insulating layer and the second insulating layer are made of an insulating material, and a material having a high reflectivity, for example, a DBR structure, may be formed to reflect light emitted from the active layer 1112.

The first insulating layer and the second insulating layer may have a DBR structure in which materials having different refractive indexes are repeatedly arranged. For example, the first insulating layer and the second insulating layer may be formed of TiO ₂ , SiO ₂ , Ta ₂ O ₅ , HfO ₂ Or a laminated structure including at least one of them.

In addition, according to another embodiment, the first insulating layer and the second insulating layer are not limited to reflectivity for light emitted from the active layer 1112 according to the wavelength of light emitted from the active layer 1112, Can be freely selected.

According to another embodiment, the first insulating layer and the second insulating layer may be provided as an ODR layer. According to another embodiment, the first insulating layer and the second insulating layer may be provided in a hybrid type in which a DBR layer and an ODR layer are stacked.

When the light emitting device according to the embodiment is mounted by a flip chip bonding method and is implemented as a light emitting device package, the light provided from the light emitting structure 1110 may be emitted through the substrate 1105. Light emitted from the light emitting structure 1110 may be reflected by the first insulating layer and the second insulating layer and may be emitted toward the transparent substrate 1105.

Also, the light emitted from the light emitting structure 1110 may be emitted in the lateral direction of the light emitting structure 1110. The light emitted from the light emitting structure 1110 may be incident on the first bonding pad 1172 and the second bonding pad 1172 among the surfaces on which the first bonding pad 1172 and the second bonding pad 1171 are disposed. The pad 1171 may be discharged to the outside through an area not provided.

Accordingly, the light emitting device 1100 according to the embodiment can emit light in six directions surrounding the light emitting structure 1110, and the light intensity can be remarkably improved.

The sum of the area of the first bonding pad 1172 and the area of the second bonding pad 1171 in the upper direction of the light emitting device 1100 may be smaller than the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171. [ Is equal to or smaller than 60% of the total area of the upper surface of the light emitting device 1100 in which the pad 1171 and the second bonding pad 1171 are disposed. The first bonding pad 1171 is electrically connected to the first bonding pad 1172

For example, the total area of the upper surface of the light emitting device 1100 may correspond to an area defined by a lateral length and a longitudinal length of the lower surface of the first conductive semiconductor layer 1111 of the light emitting structure 1110 . The total area of the upper surface of the light emitting device 1100 may correspond to the area of the upper surface or the lower surface of the substrate 1105.

By thus providing the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 equal to or smaller than 60% of the total area of the light emitting device 1100, The amount of light emitted to the surface on which the pad 1172 and the second bonding pad 1171 are disposed can be increased. Accordingly, according to the embodiment, since the amount of light emitted toward the six surfaces of the light emitting device 1100 is increased, the light extraction efficiency can be improved and the light intensity Po can be increased. The first bonding pad 1172 and the second bonding pad 1171 may have the same area ratio or the area of the first bonding pad 1172 may be 1% or less of the area of the second bonding pad 1171, 40%. &Lt; / RTI &gt; The first bonding pad 1172 may be spaced a predetermined distance W from the chip side.

The first bonding pad 1172 may have a first concave portion (a non-contact region of FIG. 9) recessed in a first direction, and the second bonding pad 1171 may have a first concave portion And a second concave portion (non-contact region in Fig. 9) concave in the opposite direction. The first concave portion and the second concave portion may be disposed so as not to overlap in the first direction.

The sum of the area of the first bonding pad 1172 and the area of the second bonding pad 1171 is preferably less than 30% of the total area of the light emitting device 1100, The same or larger. As such, since the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is equal to or greater than 30% of the total area of the light emitting device 1100, Stable mounting can be performed through the pad 1172 and the second bonding pad 1171 and the electrical characteristics of the light emitting device 1100 can be secured.

The sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is greater than the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 in consideration of the light extraction efficiency and the stability of bonding, ) And not more than 60%.

That is, when the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is 30% or more to 100% or less of the total area of the light emitting device 1100, The electrical characteristics can be ensured and the bonding force to be mounted on the light emitting device package can be ensured, so that stable mounting can be performed.

If the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is more than 0% and not more than 60% of the total area of the light emitting device 1100, The light extraction efficiency of the light emitting device 1100 can be improved and the light intensity Po can be increased by increasing the amount of light emitted to the surface on which the second bonding pad 1171 and the second bonding pad 1171 are disposed.

In order to secure the electrical characteristics of the light emitting device 1100 and the bonding force to be mounted on the light emitting device package and increase the light intensity, the area of the first bonding pad 1172 and the second bonding pad 1171 Is not less than 30% and not more than 60% of the total area of the light emitting element 1100.

When the area of the third insulating layer is 10% or more of the entire upper surface of the light emitting device 1100, the package body disposed under the light emitting device may be discolored or cracked, , It is advantageous to secure the light extraction efficiency to emit light to the six surfaces of the light emitting element.

For example, the area of the first insulating layer may be sufficiently large to cover the area of the first bonding pad 1172. The length of one side of the first insulating layer may be greater than the length of one side of the first bonding pad 1172 by about 4 micrometers to 10 micrometers, for example. For example, the area of the second insulating layer may be sufficiently large to cover the area of the second bonding pad 1171. The length of one side of the second insulating layer may be greater than the length of one side of the second bonding pad 1171 by about 4 micrometers to 10 micrometers, for example.

The light emitted from the light emitting structure 1110 may not be incident on the first bonding pad 1172 and the second bonding pad 1171 due to the first insulating layer and the second insulating layer So that it can be reflected. Accordingly, according to the embodiment, light generated and emitted from the light emitting structure 1110 can be minimized by being incident on the first bonding pad 1172 and the second bonding pad 1171.

Since the third insulating layer is disposed between the first bonding pad 1172 and the second bonding pad 1171 according to the embodiment of the present invention, The amount of light emitted between the first bonding pad 1171 and the second bonding pad 1171 can be controlled.

As described above, the light emitting device 1100 according to the embodiment may be mounted, for example, in a flip chip bonding manner to provide a light emitting device package. In this case, when the package body on which the light emitting device 1100 is mounted is provided by resin or the like, strong light of a short wavelength emitted from the light emitting device 1100 in the lower region of the light emitting device 1100 causes discoloration Or cracks may occur.

In the light emitting device 1100 according to the embodiment, a plurality of contact holes C31, C32, and C33 may be provided in the ohmic contact layer. The second conductive type semiconductor layer 1113 and the insulating layer can be bonded through the plurality of contact holes C31, C32, and C33 provided in the ohmic contact layer. The insulating layer can be in direct contact with the second conductive type semiconductor layer 1113 so that the adhesive force can be improved as compared with the case where the insulating layer is in contact with the ohmic contact layer.

When the insulating layer directly contacts only the ohmic contact layer, the bonding force or adhesion force between the insulating layer and the ohmic contact layer may be weakened. For example, when the insulating layer and the metal layer are combined, the bonding force or adhesion between the materials may be weakened.

For example, if the bonding force or adhesive force between the insulating layer () and the ohmic contact layer is weak, peeling may occur between the two layers. If peeling occurs between the insulating layer and the ohmic contact layer, the characteristics of the light emitting device 1100 may deteriorate and the reliability of the light emitting device 1100 can not be secured.

The ohmic contact layer may include a first region R11, a second region R12, and a third region R13. The first region R11 and the second region R12 may be spaced apart from each other. The third region R13 may be disposed between the first region R11 and the second region R12.

The first region R11 may include a plurality of openings provided in a region corresponding to the mesa opening of the light emitting structure 1110. [ In addition, the first region R11 may include a plurality of first contact holes C31. For example, the plurality of first contact holes C31 may be provided around the opening.

The second region R12 may include a plurality of openings provided in a region corresponding to the mesa opening of the light emitting structure 1110. [ In addition, the second region R12 may include a plurality of second contact holes C32. For example, the second contact holes C32 may be provided in plural around the opening.

The third region R13 may include a plurality of openings provided in a region corresponding to the mesa opening of the light emitting structure 1110. [ In addition, the first region R11 may include a plurality of first contact holes C31. For example, the plurality of first contact holes C31 may be provided around the opening. According to the embodiment, the first contact hole C31, the second contact hole C32, and the third contact hole C33 may be provided with a diameter of, for example, 7 micrometers to 20 micrometers. The first contact hole C31, the second contact hole C32 and the third contact hole C33 may be provided in various shapes such as an elliptical shape or a polygonal shape as well as a circular shape.

The second conductive type semiconductor layer 1113 disposed below the ohmic contact layer by the first contact hole C31, the second contact hole C32, and the third contact hole C33 may be formed on the ohmic contact layer. ) Can be exposed.

According to the light emitting device 1100 according to the embodiment, the first bonding pad 1172 and the first electrode can be contacted in a plurality of regions. Also, the second bonding pad 1171 and the second electrode may be in contact with each other in a plurality of regions. Thus, according to the embodiment, power can be supplied through a plurality of regions, so that current dispersion effect is generated according to increase of the contact area and dispersion of the contact region, and operation voltage can be reduced.

As described above, according to the light emitting device package according to the embodiment, at least one or all of the electrodes of the light emitting device according to the embodiment may correspond to the opening of the body, and at least one of the electrodes corresponding to the opening One of which may correspond to the opening with a region that is not in contact with the conductive layer. Accordingly, the electrode of the device can be supplied with driving power through the frame or / and the conductive layer. Since the contact area between the conductive layer and the electrode is smaller than the upper surface area of the opening, the adhesive force between the conductive layer and the electrode can be relaxed, thereby preventing the interface separation between the electrode and the semiconductor layer .

And the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material. Therefore, the light emitting device package according to the embodiment has advantages such that the electrical connection and the physical bonding force are not deteriorated because the re-melting phenomenon does not occur even when the light emitting device package according to the embodiment is bonded to the main substrate through a reflow process have.

In addition, according to the light emitting device package according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.

As described above, according to the light emitting device package and the method of manufacturing the light emitting device package according to the embodiment, the first bonding pad and the second bonding pad of the light emitting device according to the embodiment are electrically connected to the driving power . And, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material.

Therefore, the light emitting device package according to the embodiment has advantages such that the electrical connection and the physical bonding force are not deteriorated because the re-melting phenomenon does not occur even when the light emitting device package according to the embodiment is bonded to the main substrate through a reflow process have.

In addition, according to the light emitting device package according to the embodiment, the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored. Thus, the selection range for the material constituting the body can be widened. According to the embodiment, the body may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.

Meanwhile, the light emitting device package according to the embodiment can be applied to the light source device.

Further, the light source device may include a display device, a lighting device, a head lamp, and the like depending on an industrial field.

An example of the light source device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module that emits light and includes a light emitting element, a light emitting module disposed in front of the reflector, An optical sheet including a light guide plate, prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, And may include a color filter disposed in front thereof. Here, the bottom cover, the reflection plate, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. The display device may have a structure in which light emitting elements emitting red, green, and blue light are disposed, respectively, without including a color filter.

As another example of the light source device, the head lamp includes a light emitting module including a light emitting device package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, A lens that refracts light forward, and a shade that reflects off a portion of the light that is reflected by the reflector and that is directed to the lens to provide the designer with a desired light distribution pattern.

The lighting device, which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply, an inner case, and a socket. Further, the light source device according to the embodiment may further include at least one of a member and a holder. The light source module may include the light emitting device package according to the embodiment.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or scope of the invention.

110: Package body
111: 1st frame
112: second frame
113: Body
120: Light emitting element
121: first bonding pad
122: 2nd bonding pad
123:
130: Adhesive
135:
140: Molding part
310: circuit board
311: first pad
312: second pad
321: first conductive layer
322: second conductive layer
R: The recess
TH1: first opening
TH2: second opening

Claims (15)

An active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a second conductive type semiconductor layer formed between the second conductive type semiconductor layer and the active layer, A light emitting structure including a plurality of recesses exposing a partial region of the one conductivity type semiconductor layer;
A first insulating layer disposed on the light emitting structure and having a plurality of first openings in a region overlapping the plurality of recesses in a first direction;
And a plurality of second openings disposed on the first insulating layer and overlapping the plurality of first openings in the first direction and a plurality of third openings spaced apart from the plurality of second openings, 2 insulating layer;
A first bonding pad disposed on the second insulating layer and electrically connected to the first conductive type semiconductor layer in the second opening;
A second bonding pad disposed on the second insulating layer and electrically connected to the second conductive type semiconductor layer in the third opening;
A third insulating layer disposed on the first and second bonding pads and having a plurality of fourth and fifth openings in a region overlapping with a portion of the first and second bonding pads in the first direction; And
First and second bonding pads disposed on the third insulating layer and electrically connected to the first and second bonding pads in the fourth and fifth openings, respectively; Lt; / RTI &gt;
The first and second bonding pads each include a plurality of first and second branched electrodes extending in a second direction,
Wherein the first bonding pad includes a first concave portion concaved in the second direction in which the plurality of second branched electrodes extend,
Wherein the second bonding pad includes a second concave portion concaved in the second direction in which the plurality of first branched electrodes are extended,
Wherein the first direction is a thickness direction of the light emitting structure, and the second direction is a direction perpendicular to the first direction. A first frame having a first opening;
A second frame having a second opening;
A body disposed between the first and second frames;
A light emitting device including a first bonding pad and a second bonding pad;
A first conductive layer in the first opening; And
And a second conductive layer in the second opening,
The first opening passes through the upper surface and the lower surface of the first frame,
The second opening passes through the upper surface and the lower surface of the second frame,
Wherein the first bonding pad faces the first frame and overlaps with the first opening,
The second electrode facing the second frame and overlapping the second opening,
Wherein the first bonding pad comprises a first contact region in contact with the first conductive layer on the first opening and a first non-contact region in non-contact with the first conductive layer. 3. The method of claim 2,
Wherein the second electrode has a second contact region in contact with the second conductive layer on the second opening and a second non-contact region in non-contact with the second conductive layer. The method of claim 3,
Wherein the first and second conductive layers comprise solder paste. 5. The method of claim 4,
Wherein at least one of the first and second electrodes has an area of each of the first and second contact regions that is at least twice the area of particles constituting the first and second conductive layers. The method according to claim 4 or 5,
Wherein at least one of the first and second electrodes has an area of each of the first and second non-contact areas being at least 1.5 times the area of particles constituting the first and second conductive layers. 6. The method according to any one of claims 3 to 5,
Wherein an area of the first contact region of the first bonding pad is smaller than a top surface area of the first opening,
And an area of a second contact region of the second electrode is smaller than a top surface area of the second opening. 8. The method of claim 7,
Wherein a first contact region of the first bonding pad is disposed on the first opening,
And a second contact region of the second electrode is disposed on the second opening in one or more than one,
Wherein a first non-contact area of the first bonding pad is disposed on the first opening part or a plurality of areas and has an area smaller than an area of the first contact area,
And a second non-contact region of the second electrode is disposed on the second opening in one or more than two and has an area smaller than an area of the second contact region. 8. The method of claim 7,
Wherein the first and second conductive layers have concave curved surfaces on the first and second non-contact regions. 8. The method of claim 7,
And at least one of an adhesive and a resin portion disposed between the body and the light emitting element. 11. The method of claim 10,
Wherein the body includes a recess recessed from a top surface in a downward direction,
Wherein the adhesive is disposed in the recess,
Wherein the adhesive contacts the upper surface of the body, the lower surface of the light emitting element, and the first and second electrodes. 11. The method of claim 10,
Wherein at least one of the adhesive and the resin part is disposed outside the non-contact area of the first and second electrodes. 8. The method of claim 7,
The first and second frames are conductive frames,
Wherein the adhesive is formed of an insulating resin material. 8. The method of claim 7,
Wherein the first and second frames are insulative frames and are formed of the same material as the body. 8. The method of claim 7,
Wherein the body has a cavity recessed around the light emitting element.

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