KR20220061927A - Semiconductor device, light semiconducotr device package - Google Patents

Abstract

According to an embodiment, provided is a semiconductor element package, which includes: first and second frames having first and second openings; a body disposed between the first and second frames; a light emitting element including a first bonding pad and a second bonding pad; and a conductive layer in the first and second openings. At least one of the first and second bonding pads faces the first and second frames, overlaps the first and second openings, and includes a contact area in contact with the conductive layer and a first non-contact area in contact with the conductive layer. Damage to the electrode due to the conductive layer can be prevented.

Description

Semiconductor device and semiconductor device package {SEMICONDUCTOR DEVICE, LIGHT SEMICONDUCOTR DEVICE PACKAGE}

Embodiments relate to a semiconductor device, a semiconductor device package, a method for manufacturing a semiconductor device package, and a light source device.

A semiconductor device including a compound such as GaN or AlGaN has many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials have developed red, green, and It has the advantage of being able to implement light of various wavelength bands, such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material may be implemented as a white light source with good efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light receiving device such as a photodetector or a solar cell is manufactured using a group 3-5 or group 2-6 compound semiconductor material, a photocurrent is generated by absorbing light in various wavelength ranges through the development of the device material. By doing so, light of various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, such a light receiving element has advantages of fast response speed, safety, environmental friendliness, and easy adjustment of element materials, and thus can be easily used in power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace a light emitting diode backlight, a fluorescent lamp or an incandescent light bulb that replaces a cold cathode fluorescence lamp (CCFL) constituting a transmission module of an optical communication means and a backlight of a liquid crystal display (LCD) display device. The application is expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device may be extended to high-frequency application circuits, other power control devices, and communication modules.

A light emitting device (Light Emitting Device) may be provided as a p-n junction diode having a characteristic in which electric energy is converted into light energy by using, for example, a group 3-5 element or a group 2-6 element on the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors are receiving great attention in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet (UV) light emitting device, and a red light emitting device using a nitride semiconductor have been commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that emits light distributed in a wavelength range of 200 nm to 400 nm. can be used

Ultraviolet rays can be divided into UV-A (315nm~400nm), UV-B (280nm~315nm), and UV-C (200nm~280nm) in the order of the longest wavelength. The UV-A (315nm~400nm) area is applied in various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit detection, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm~315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as a semiconductor device capable of providing a high output is requested, research on a semiconductor device capable of increasing the output by applying a high power is being conducted.

In addition, in a semiconductor device package, research is being conducted on a method for improving the light extraction efficiency of the semiconductor device and improving the luminous intensity at the package end. In addition, in a semiconductor device package, research is being conducted on a method for improving the bonding force between the package electrode and the semiconductor device.

In addition, in a semiconductor device package, research is being conducted on a method for reducing manufacturing cost and improving manufacturing yield by improving process efficiency and changing the structure.

The embodiment may provide a semiconductor device package or a light emitting device package in which an electrode of a semiconductor device or a light emitting device facing an opening of a frame has a contact region and an open region or a non-contact region.

The embodiment provides a semiconductor device package or a light emitting device package in which an electrode of a semiconductor device or a light emitting device facing an opening of a frame is provided as a contact region and a non-contact region, thereby dispersing adhesive force with a conductive layer.

The embodiment may provide a semiconductor device package or a light emitting device package capable of improving light extraction efficiency and electrical characteristics.

The embodiment may provide a semiconductor device package or a light emitting device package capable of improving process efficiency and suggesting a new package structure to reduce manufacturing cost and improve manufacturing yield.

The embodiment may provide a semiconductor device package or a light emitting device package capable of preventing a re-melting phenomenon from occurring in a bonding region of the semiconductor device package while the semiconductor device package is re-bonded to a substrate or the like.

A light emitting device package according to an embodiment includes: a first frame having a first opening; a second frame having a second opening; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; a first conductive layer in the first opening; and a second conductive layer in the second opening, wherein the first opening passes through upper and lower surfaces of the first frame, and the second opening passes through the upper and lower surfaces of the second frame, and the second opening passes through the upper and lower surfaces of the second frame. A first bonding pad faces the first frame and overlaps the first opening, the second electrode faces the second frame and overlaps the second opening, and the first electrode is disposed on the first opening It may have a first contact region in contact with the first conductive layer and a first non-contact region in non-contact with the first conductive layer.

According to an embodiment, the second electrode may include a second contact region in contact with the second conductive layer on the second opening and a second non-contact region in contact with the second conductive layer.

According to an embodiment, the first and second conductive layers may include a solder paste, and the body may be made of an insulating material.

According to an embodiment, in at least one of the first and second electrodes, the area of each of the first and second contact regions may be twice or more of the area of particles constituting the first and second conductive layers. In at least one of the first and second electrodes, an area of each of the first and second non-contact regions may be 1.5 times or more of an area of particles constituting the first and second conductive layers.

According to an embodiment, the area of the first contact region of the first bonding pad may be smaller than the area of the upper surface of the first opening, and the area of the second contact region of the second electrode may be smaller than the area of the upper surface of the second opening. there is.

According to an embodiment, one or a plurality of first contact areas of the first bonding pad are disposed on the first opening, and one or a plurality of second contact areas of the second electrode are disposed on the second opening. one or more first non-contact areas of the first bonding pad are disposed on the first opening, have an area smaller than an area of the first contact area, and a second non-contact area of the second electrode may be disposed on the second opening in one or a plurality and may have an area smaller than an area of the second contact area.

According to an embodiment, the first and second conductive layers may have concave curved surfaces on the first and second non-contact regions, and may include at least one of an adhesive and a resin part disposed between the body and the light emitting device. can

According to an embodiment, the body includes a recess concave in a direction from an upper surface to a lower surface, the adhesive is disposed in the recess, and the adhesive is an upper surface of the body, a lower surface of the light emitting device, and the first and second electrodes can be in contact with

In an embodiment, at least one of the adhesive and the resin part may be disposed outside the non-contact area of the first and second electrodes.

According to an embodiment, the first and second frames may be conductive frames, and the adhesive may be formed of an insulating resin material.

According to an embodiment, the body may have a concave cavity around the light emitting device.

According to the semiconductor device package and the semiconductor device package manufacturing method according to the embodiment, a contact area and a non-contact area are provided for the electrodes of the light emitting device in a region corresponding to the opening of the package body, thereby reducing damage to the electrodes. there is.

According to the semiconductor device package and the semiconductor device package manufacturing method according to the embodiment, there is an advantage in that light extraction efficiency, electrical characteristics, and reliability can be improved.

According to the semiconductor device package and the semiconductor device package manufacturing method according to the embodiment, there is an advantage in that process efficiency can be improved and a new package structure can be proposed, thereby reducing the manufacturing cost and improving the manufacturing yield.

The semiconductor device package according to the embodiment has an advantage in that it is possible to prevent discoloration of the reflector by providing a body having a high reflectance, thereby improving the reliability of the semiconductor device package.

According to the semiconductor device package and the semiconductor device manufacturing method according to the embodiment, it is possible to prevent a re-melting phenomenon from occurring in the bonding region of the semiconductor device package in the process of re-bonding the semiconductor device package to a substrate or the like. There is this.

The reliability of the semiconductor device package or the light emitting device package according to the embodiment may be improved.

1 is a plan view of a light emitting device package according to a first embodiment of the present invention.
FIG. 2 is a bottom view of the light emitting device package shown in FIG. 1 .
3 is a cross-sectional view taken along line DD of the light emitting device package shown in FIG. 1 .
FIG. 4 is a cross-sectional view taken along line EE of the light emitting device package shown in FIG. 1 .
5 is a cross-sectional view taken along line FF of the light emitting device package shown in FIG. 1 .
FIG. 6 is a detailed view showing a first bonding pad and a first conductive layer of the light emitting device of FIG. 4 .
7 is a detailed view showing a second electrode and a second conductive layer of the light emitting device of FIG. 5 .
FIG. 8 is a partially enlarged view of the light emitting device package of FIG. 1 .
9 is a view for explaining a contact and non-contact region between the first and second electrodes and the first and second conductive layers of the light emitting device of FIG. 8 .
10 is another example of the first and second electrodes and the opening of the light emitting device of FIG. 8 .
11 is a first modified example of an electrode of a light emitting device according to an embodiment.
12 is an example of arrangement of the electrode of the light emitting device of FIG. 11 and the opening of the body.
13 is a second modified example of the electrode of the light emitting device of FIG. 11 .
14 is an example of arrangement of the electrode of the light emitting device of FIG. 11 and the opening of the body.
15 to 17 are other modified examples of the electrode of the light emitting device according to the embodiment.
19 to 22 are examples of openings of the light emitting device according to the embodiment.
23 is a first modified example of the light emitting device package of FIG. 3 .
24 is a second modified example of the light emitting device package of FIG. 3 .
25 is an example of a module in which the light emitting device package of FIG. 3 is disposed on a circuit board.
26 is an example of a module in which the light emitting device package of FIG. 3 is disposed on a circuit board.
27 is a side cross-sectional view of a light emitting device package according to a second embodiment of the present invention.
28 is another cross-sectional view of the light emitting device package of FIG. 27 .
29 is an example of a plan view of a light emitting device according to an embodiment.
30 is a plan view illustrating another example of a light emitting device according to an embodiment.
31A and 31B are cross-sectional views illustrating the first bonding pad and the second bonding pad taken along line AA of the light emitting device of FIG. 29 .

Hereinafter, an embodiment will be described with reference to the accompanying drawings. In the description of embodiments, each layer (film), region, pattern or structure is “on/over” or “under” the substrate, each layer (film), region, pad or pattern. In the case of being described as being formed on, “on/over” and “under” include both “directly” or “indirectly” formed through another layer. do. In addition, the reference for the upper / upper or lower of each layer will be described with reference to the drawings, but the embodiment is not limited thereto.

Hereinafter, a semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The semiconductor device of the semiconductor device package may include a light emitting device that emits light of ultraviolet, infrared, or visible light. Hereinafter, as an example of a semiconductor device, a light emitting device is applied as an example, and a non-light emitting device, for example, a Zener diode, or a sensing device for monitoring wavelength or heat is included in a package or a light source device to which the light emitting device is applied. Hereinafter, a semiconductor device package or a light emitting device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. Hereinafter, a case in which a light emitting device is applied as an example of a semiconductor device will be described.

<First embodiment>

1 is a plan view of a light emitting device package according to a first embodiment of the present invention, FIG. 2 is a bottom view of the light emitting device package shown in FIG. 1, and FIG. 3 is a line D-D of the light emitting device package shown in FIG. 4 is a cross-sectional view taken along the line E-E of the light emitting device package shown in FIG. 1 , FIG. 5 is a cross-sectional view taken along the line F-F of the light emitting device package shown in FIG. 1 , and FIG. 6 is the light emitting device of FIG. A detailed view showing the first bonding pad and the first conductive layer of FIG. 7 is a detailed view showing the second electrode and the second conductive layer of the light emitting device of FIG. 5 , FIG. 8 is a part of the light emitting device package of FIG. 1 and FIG. 9 is a view for explaining a contact and non-contact region between the first and second electrodes and the first and second conductive layers of the light emitting device of FIG. 8 .

1 to 5 , the device package 100 according to the embodiment includes a package body 110 having a plurality of frames 111 and 112 and a body 113 disposed between the plurality of frames 111 and 112 and , a semiconductor device disposed on the plurality of frames 111 and 112 , for example, the light emitting device 120 may be included. Hereinafter, the device package 100 is a package in which the light emitting device 120 is disposed, and will be described as a light emitting device package.

<Package body 110>

The plurality of frames 111 and 112 may include at least two, for example, a first frame 111 and a second frame 112 . The first frame 111 and the second frame 112 may be disposed to be spaced apart from each other. The first and second frames 111 and 112 may be spaced apart from each other in the X-axis direction.

The package body 110 may include a body 113 . The body 113 may be disposed between the first frame 111 and the second frame 112 . The body 113 may function as an electrode separation line. The body 113 may be referred to as an insulating member. The body 113 may be disposed between the frames 111 and 112 in the Y-axis direction orthogonal to the X-axis direction.

The body 113 may be disposed on the first frame 111 . Also, the body 113 may be disposed on the second frame 112 . The body 113 may provide an inclined surface disposed on the first frame 111 and the second frame 112 . A wall portion 110A having a cavity C may be provided on the first frame 111 and the second frame 112 by the inclined surface of the body 113 . The wall portion 110A may be formed integrally with the body 113 or may be formed separately. According to an embodiment, the package body 110 may be provided in a structure having a cavity (C) or may be provided in a structure having a flat top surface without the cavity (C). The wall portion 110A may be removed.

For example, the body 113 may include polyphthalamide (PPA: Polyphthalamide), PCT (Polychloro Triphenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy molding compound (EMC), At least one selected from a group including a silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), and sapphire (Al ₂ O ₃ ) may be formed. Also, the body 113 may include a high refractive filler such as TiO ₂ and SiO ₂ .

The first frame 111 and the second frame 112 may be provided as conductive frames. The first frame 111 and the second frame 112 may stably provide structural strength of the package body 110 and may be electrically connected to the light emitting device 120 . When the first frame 111 and the second frame 112 are conductive frames, they may be defined as lead frames, and may radiate heat generated from the light emitting device 120 or reflect light.

As another example, the first frame 111 and the second frame 112 may be provided as insulating frames. When the first frame 111 and the second frame 112 are insulating frames, structural strength of the package body 110 may be stably provided. When the first frame 111 and the second frame 112 are insulating frames, the body 113 and the frames 111 and 112 may be integrally formed of the same material or may be made of different materials. Differences between a case in which the first frame 111 and the second frame 112 are formed of an insulating frame and a case that the second frame 112 are formed of a conductive frame will be described later.

When the first and second frames 111 and 112 are conductive, a metal such as platinum (Pt), titanium (Ti), nickel (Ni), copper (Cu), gold (Au), tantalum (Ta), or aluminum It may include at least one of (Al) and silver (Ag), and may be formed as a single layer or a multi-layer having different metal layers.

When the first and second frames 111 and 112 are made of an insulating material, they may be made of a resin material or an insulating material, for example, polyphthalamide (PPA: Polyphthalamide), PCT (Polychloro Triphenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy molding compound (EMC), silicon molding compound (SMC), ceramic, PSG (photo sensitive glass), sapphire (Al ₂ O ₃ ) at least one selected from the group consisting of can be formed. In addition, the first and second frames 111 and 112 may include a high refractive index filler such as TiO ₂ and SiO ₂ in an epoxy material. The first and second frames 111 and 112 may be made of a reflective resin material.

1 and 2 , the first frame 111 may protrude more outward than the first side of the package body 110 . The second frame 112 may protrude more outward than the second side opposite to the first side of the package body 110 .

<Light emitting element 120>

According to an embodiment, the light emitting device 120 may include a plurality of bonding pads 121 and 122 and a light emitting unit 123 having a semiconductor layer. One or a plurality of the light emitting devices 120 may be disposed on the first and second frames 111 and 112 .

The semiconductor layer of the light emitting part 123 may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The first bonding pad 121 may be electrically connected to the first conductivity type semiconductor layer. In addition, the second bonding pad 122 may be electrically connected to the second conductivity type semiconductor layer.

According to an embodiment, the semiconductor layer of the light emitting part 123 may be provided as a compound semiconductor. The semiconductor layer may be provided as, for example, a Group 2-6 or Group 3-5 compound semiconductor. For example, the semiconductor layer may include at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). . The semiconductor layer may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

The first and second conductivity-type semiconductor layers may be implemented with at least one of a group 3-5 or group 2-6 compound semiconductor. The first and second conductivity type semiconductor layers are formed of, for example, a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). can be For example, the first and second conductivity-type semiconductor layers may include at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. . The first conductivity-type semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductivity-type semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The active layer may be implemented with a compound semiconductor. The active layer may be embodied as, for example, at least one of a group 3-5 or group 2-6 compound semiconductor. When the active layer is implemented in a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers that are alternately disposed, and In _x Al _y Ga _1-xy N (0≤x≤1, 0 It may be disposed as a semiconductor material having a compositional formula of ≤y≤1, 0≤x+y≤1). For example, the active layer is selected from the group consisting of InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, InP/GaAs. It may include at least one.

The light emitting device 120 may be disposed on the package body 110 . The light emitting device 120 may be disposed on the first frame 111 and the second frame 112 . The light emitting device 120 may overlap the first frame 111 and the second frame 112 in a vertical direction, for example, in a Z-axis direction. The light emitting device 120 may be disposed in the cavity (C).

The bonding pads 121 and 122 of the light emitting device 120 may be disposed under the light emitting part 123 to be spaced apart from each other. The bonding pads 121 and 122 may face the frames 111 and 112 in a vertical direction. The first bonding pad 121 may be disposed on the first frame 111 . The second bonding pad 122 may be disposed on the second frame 112 . The first bonding pad 121 may face the first frame 111 , and the second bonding pad 122 may face the second frame 112 . The first bonding pad 121 and the second bonding pad 122 may be disposed to be spaced apart from each other on the lower surface of the light emitting device 120 .

The first bonding pad 121 may be disposed between the semiconductor layer of the light emitting part 123 and the first frame 111 . The second bonding pad 122 may be disposed between the semiconductor layer of the light emitting part 123 and the second frame 112 . The first bonding pad 121 may be disposed between the first conductive semiconductor layer and the first frame 111 . The second bonding pad 122 may be disposed between the second conductive semiconductor layer and the second frame 112 .

The first bonding pad 121 and the second bonding pad 122 are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au , Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO using one or more materials or alloys selected from the group consisting of a single layer or It may be formed in multiple layers.

<Body opening (TH1, TH2)>

Meanwhile, the light emitting device package 100 according to the embodiment may include at least two openings, for example, a first opening TH1 and a second opening TH2, as shown in FIGS. 2 to 5 . The first frame 111 may include the first opening TH1 . The second frame 112 may include the second opening TH2 .

One or a plurality of the first openings TH1 may be provided in the first frame 111 . The first opening TH1 may be provided through the first frame 111 . The first opening TH1 may be provided through the upper and lower surfaces of the first frame 111 in the Z direction.

The first opening TH1 may be disposed under the first bonding pad 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding pad 121 of the light emitting device 120 in the Z direction. The first opening TH1 may be provided to overlap the first bonding pad 121 of the light emitting device 120 in the Z direction from the upper surface to the lower surface of the first frame 111 .

One or a plurality of the second openings TH2 may be provided in the second frame 112 . The second opening TH2 may be provided through the second frame 112 . The second opening TH2 may be provided through the upper and lower surfaces of the second frame 112 in the Z direction.

The second opening TH2 may be disposed under the second bonding pad 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding pad 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding pad 122 of the light emitting device 120 in a direction from an upper surface to a lower surface of the second frame 112 .

The first opening TH1 and the second opening TH2 may be spaced apart from each other. The first opening TH1 and the second opening TH2 may be disposed to be spaced apart from each other under the lower surface of the light emitting device 120 . The first opening TH1 and the second opening TH2 may overlap the light emitting device 120 in the Z-axis direction. The first opening TH1 and the second opening TH2 may be disposed in a region overlapping the light emitting device 120 and may be spaced apart from the body 113 .

According to an embodiment, as shown in FIGS. 3 and 8 , the width W2 of the upper region of the first opening TH1 in the X direction is smaller than or equal to the width W1 of the first bonding pad 121 . can be provided. Also, the width of the upper region of the second opening TH2 in the X direction may be smaller than or equal to the width of the second bonding pad 122 . The widths of the first and second openings TH1 and TH2 in the X direction may be the same or different from each other. The widths in the X direction of the first and second bonding pads 121 and 122 may be the same or different from each other.

According to an embodiment, as shown in FIGS. 4 and 8 , the length W12 of the upper region of the first opening TH1 in the Y direction is smaller than or equal to the length W11 of the first bonding pad 121 . can be provided. 5 , the length W13 of the upper region of the second opening TH2 in the Y direction may be less than or equal to the length W14 of the second bonding pad 122 . The lengths W2 and W5 in the Y direction of the first and second openings TH1 and TH2 may be different or the same. The lengths W1 and W6 in the Y direction of the first and second bonding pads 121 and 122 may be different from or the same as each other. Here, when the bonding pads 121 and 122 have a length of W13 and W11, the lengths of the openings TH1 and TH2 may have a relationship of W12 and W14. The upper area of each of the openings TH1 and TH2 may have a range of 50% or more of the area of the lower surface of each of the bonding pads 121 and 122, for example, 50% to 110%. In addition, each of the openings TH1 and TH2 and each of the bonding pads 121 and 122 may have a non-overlapping area that partially faces and does not face each other. Accordingly, the first bonding pad 121 of the light emitting device 120 and the first frame 111 may be attached to each other by a material provided by the first opening TH1 . In addition, the second bonding pad 122 and the second frame 112 of the light emitting device 120 may be attached to each other by a material provided by the first opening TH1 .

The distance from the upper region of the second opening TH2 to the side end of the second bonding pad 122 in the X direction may be 40 micrometers or more, for example, 40 to 60 micrometers. When the distance is 40 micrometers or more, a process margin for preventing the second bonding pad 122 from being exposed from the bottom of the second opening TH2 may be secured. In addition, when the distance is 60 micrometers or less, the area of the second bonding pad 122 exposed to the second opening TH2 may be secured, and the second bonding exposed by the second opening TH2 may be secured. Since the resistance of the pad 122 may be lowered, current may be smoothly injected into the second bonding pad 122 exposed by the second opening TH2 .

8 and 19, the width W2 of the upper region of the first opening TH1 in the X direction is smaller than the width of the lower region of the first opening TH1, or the opening ( TH3) may be provided with the same width. In addition, the width of the upper region of the second opening TH2 may be smaller than the width of the lower region of the second opening TH2 or may be provided as the opening TH3 having the same width as in FIG. 20 . 19 , the peripheral surfaces of the openings TH1 and TH2 may be a convex curved surface S1 or a vertical plane S2 as illustrated in FIG. 20 .

19, 21 and 22 , the openings TH1, TH2, TH3, and TH5 may be provided in a shape in which the width in the X or Y direction gradually decreases from the lower region to the upper region. The circumferential surfaces S1, S3, and S4 between the upper and lower regions of the first and second openings TH1 and TH2 are a plurality of inclined planes S3 having different inclinations, or a curved surface S1 having a curvature. ) or a curved surface S4 having different curvatures. The openings TH1, TH2, TH3, TH4, and TH5 may have at least one of a flat surface, an inclined surface, or a curved surface. It may be provided with a material, and in the case of a conductive material, it may be provided with the structure shown in FIGS. 19 to 22 .

A distance between the first opening TH1 and the second opening TH2 in the lower surface of the first frame 111 and the second frame 112 is, for example, 100 micrometers or more, for example, 100 micrometers to 150 micrometers can be provided. The distance between the openings TH1 and TH2 may be a minimum distance for preventing an electrical short between electrodes when the light emitting device package 100 is mounted on a circuit board or a sub-mount. .

<Adhesive 130>

3 to 5 , the light emitting device package 100 according to the embodiment may include an adhesive 130 . The adhesive 130 may be disposed between the body 113 and the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120 . The adhesive 130 may overlap the light emitting device 120 in a vertical Z-axis direction. The adhesive 130 may be adhered to the light emitting device 120 and the body 113 . The adhesive 130 may be disposed between the first bonding pad 121 and the second bonding pad 122 of the light emitting device 120 or may be in contact with the first and second bonding pads 121 and 122 .

<Recess of body (R)>

The light emitting device package 100 according to the embodiment may include a recess R as shown in FIGS. 1 and 2 to 5 . The recess R may be provided in the body 113 or an upper portion of the body 113 . The recess R may be provided between the first opening TH1 and the second opening TH2. The recess (R) may be provided to be concave in the direction from the upper surface to the lower surface of the body (113). One or a plurality of the recesses R may be disposed under the light emitting device 120 . The recess R may be provided to overlap the light emitting device 120 in the Z direction. The adhesive 130 may be disposed in the recess R, for example. The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed in direct contact with the upper surface of the body 113 , for example. In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120 .

For example, the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. . Also, as an example, when the adhesive 130 includes a reflective function, the adhesive may include white silicone.

The adhesive 130 may provide a stable fixing force between the body 113 and the light emitting device 120 , and when light is emitted to a lower surface of the light emitting device 120 , the light emitting device 120 and the light emitting device 120 . A light diffusion function may be provided between the body 113 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120 , the adhesive 130 provides a light diffusion function, thereby improving the light extraction efficiency of the light emitting device package 100 . In addition, the adhesive 130 may reflect light emitted from the light emitting device 120 . When the adhesive 130 includes a reflective function, the adhesive 130 may be made of a material including TiO ₂ , Silicone, and the like.

3 , according to the embodiment, the depth T1 of the recess R is smaller than the depth T2 of the first opening TH1 or the depth T2 of the second opening TH2. can be provided. The depth T1 of the recess R may be determined in consideration of the adhesive force of the adhesive 130 . In addition, the recess R has a depth T1 in consideration of the stable strength of the body 113 and/or cracks in the light emitting device package 100 by heat emitted from the light emitting device 120 . ) can be determined not to occur.

The recess R may provide an appropriate space under the light emitting device 120 in which a kind of underfill process may be performed. Here, the under fill process may be a process of mounting the light emitting device 120 on the package body 110 and then disposing the adhesive 130 under the light emitting device 120 , and the light emitting device ( 120) may be a process of disposing the light emitting device 120 after disposing the adhesive 130 in the recess R in order to be mounted through the adhesive 130 in the process of mounting the package body 110 there is. The recess R may be provided at a first depth or more so that the adhesive 130 may be sufficiently provided between the lower surface of the light emitting device 120 and the upper surface of the body 113 . In addition, the recess (R) may be provided to a second depth or less in order to provide a stable strength of the body (113).

The depth T1 of the recess R and the width W4 in the X direction may affect the formation position and fixing force of the adhesive 130 . A depth T1 and a width W4 of the recess R may be determined to provide sufficient fixing force by the adhesive 130 disposed between the body 113 and the light emitting device 120 . . For example, the depth T1 of the recess R may be 40 micrometers or more, for example, in a range of 40 to 60 micrometers.

The width W4 of the recess R may be provided to be narrower than the distance between the first bonding pad 121 and the second bonding pad 122 in the X direction of the light emitting device 120, and may be 140 micrometers. Meters or more may be provided, for example, in the range of 140 to 160 micrometers. The Y-direction length of the recess R may be greater or smaller than the Y-direction length of the light emitting device 120 , thereby guiding the formation of the adhesive 130 and strengthening the Y-direction adhesive force.

A depth T2 of the first opening TH1 may be the same as a thickness of the first frame 111 . A depth T2 of the first opening TH1 may be provided to have a thickness capable of maintaining a stable strength of the first frame 111 . A depth T2 of the second opening TH2 may be equal to a thickness of the second frame 112 . A depth T2 of the second opening TH2 may be provided to a thickness capable of maintaining a stable strength of the second frame 112 .

A depth T2 of the first opening TH1 and a depth T2 of the second opening TH2 may be equal to the thickness of the body 113 . A depth T2 of the first opening TH1 and a depth T2 of the second opening TH2 may be provided to have a thickness capable of maintaining a stable strength of the body 113 . For example, the depth T2 of the first opening TH1 may be 180 micrometers or more, for example, 180 to 220 micrometers. For example, the thickness difference between the depths T2-T1 may be selected to be at least 100 micrometers or more. This is in consideration of the thickness of the injection process that can provide crack free (crack free) of the body (113).

According to an embodiment, the ratio (T2/T1) of the depth T1 to the depth T2 may be 2 to 10. For example, when the depth of T2 is provided as 200 micrometers, the depth of T1 may be provided as 20 micrometers to 100 micrometers.

<Molding part 140>

The light emitting device package 100 according to the embodiment may include a molding unit 140 as shown in FIGS. 1 and 2 to 5 . The molding part 140 may be provided on the light emitting device 120 . The molding unit 140 may be disposed on the first frame 111 and the second frame 112 . The molding part 140 may be disposed in the cavity C provided by the package body 110 .

The molding part 140 may include an insulating material. In addition, the molding unit 140 may include a wavelength conversion unit that receives the light emitted from the light emitting device 120 and provides wavelength-converted light. For example, the molding unit 140 may be formed of at least one selected from a group including a phosphor, a quantum dot, and the like. The light emitting device 120 may emit blue, green, red, white, infrared or ultraviolet light. The phosphor or quantum dot may emit blue, green, or red light. The molding part 140 may not be formed.

<Conductive layer (321, 322)>

The light emitting device package 100 according to the embodiment may include a first conductive layer 321 and a second conductive layer 322 as shown in FIGS. 3 to 5 . The first conductive layer 321 may be disposed to be spaced apart from the second conductive layer 322 .

The first conductive layer 321 may be provided in the first opening TH1 . The first conductive layer 321 may be disposed under the first bonding pad 121 . The width and length of the first conductive layer 321 in the X and Y directions may be smaller than the width and length of the first bonding pad 121 .

The first bonding pad 121 may have a width in an X direction perpendicular to a Z direction in which the first opening TH1 is formed. A width of the first bonding pad 121 may be greater than a width W2 of the first opening TH1 in the X direction.

The first conductive layer 321 may be disposed in direct contact with the lower surface of the first bonding pad 121 . The first conductive layer 321 may be electrically connected to the first bonding pad 121 . The first frame 111 may be disposed around the first conductive layer 321 .

The second conductive layer 322 may be provided in the second opening TH2 . The second conductive layer 322 may be disposed under the second bonding pad 122 . The width and length of the second conductive layer 322 in the X and Y directions may be smaller than the width and length of the second bonding pad 122 . The second bonding pad 122 may have a width W13 in the X direction perpendicular to the Z direction in which the second opening TH2 is formed. A width W13 of the second bonding pad 122 in the X direction may be greater than a width W14 of the second opening TH2 in the X direction.

The second conductive layer 322 may be disposed in direct contact with the lower surface of the second bonding pad 122 . The second conductive layer 322 may be electrically connected to the second bonding pad 122 . The second frame 112 may be disposed around the second conductive layer 322 .

The first conductive layer 321 and the second conductive layer 322 may include one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, Zn, In, Bi, contact, Ti, etc. or an alloy thereof. may include A material capable of securing a conductive function may be used as the first conductive layer 321 and the second conductive layer 322 . The first and second conductive layers 321 and 322 are solder pastes, and may be formed of powder particles or a mixture of particle particles and flux. The solder paste may include Sn-Ag-Cu, and the weight % of each metal may vary.

For example, the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, or the like, and may be configured as a multi-layer made of different materials or a multi-layer or a single layer made of an alloy.

In the light emitting device package 100 according to the embodiment, power is connected to the first bonding pad 121 through the first conductive layer 321 of the first opening TH1, and the Power may be connected to the second bonding pad 122 through the second conductive layer 322 . When the first and second frames 111 and 112 are made of a conductive material, the first and second frames 111 and 112 may be electrically connected to the bonding pads 121 and 122 of the light emitting device 120 . The electrodes 121 and 122 of the light emitting device 120 may be electrically connected to at least one or both of the first and second conductive layers 321 and 322 and the frames 111 and 112 . Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding pad 121 and the second bonding pad 122 . In addition, the light emitted from the light emitting device 120 can be provided in an upper direction of the package body 110 .

<Lower recess (R10, R20)>

In addition, the light emitting device package 100 according to the embodiment may include a first lower recess R10 and a second lower recess R20 as shown in FIGS. 1 to 3 . The first lower recess R10 and the second lower recess R20 may be disposed to be spaced apart from each other.

The first lower recess R10 may be provided on a lower surface of the first frame 111 . The first lower recess R10 may be provided to be concave from a lower surface to an upper surface of the first frame 111 . The first lower recess R10 may be disposed to be spaced apart from the first opening TH1 . A resin part may be provided in the first lower recess R10. The resin part filled in the first lower recess R10 may be made of, for example, the same material as that of the body 113 . The resin part may be provided by being selected from materials having poor adhesion and wettability to the first and second conductive layers 321 and 322 . Alternatively, the resin part may be provided by being selected from materials having a low surface tension with the first and second conductive layers 321 and 322 . For example, the resin part filled in the first lower recess R10 may be provided in a process in which the first frame 111 , the second frame 112 , and the body 113 are formed through an injection process or the like. can

The resin part filled in the first lower recess R10 may be disposed around a lower surface area of the first frame 111 providing the first opening TH1 . The lower surface area of the first frame 111 providing the first opening TH1 may have an island shape and may be disposed separately from the surrounding lower surface of the first frame 111 . For example, as shown in FIG. 2 , the lower surface area of the first frame 111 providing the first opening TH1 includes a resin part filled in the first lower recess R10 and the body 113 . ) may be isolated from the first frame 111 around it.

Therefore, the resin part is made of a material having poor adhesion and wettability with the first and second conductive layers 321 and 322, or a material having a low surface tension between the resin part and the first and second conductive layers 321 and 322. When disposed, the first and second conductive layers 321 and 322 provided in the first and second openings TH1 and TH2 are separated from the first and second openings TH1 and TH2, and the first and second lower portions It can be prevented from spreading beyond the resin part filled in the recesses R10 and R20 or the body 113 . This is because the adhesive relationship between the first and second conductive layers 321 and 322 and the resin part and the body 113 or the wettability and surface tension between the resin part and the first and second conductive layers 321 and 322 is poor. It uses a point that is not. That is, materials forming the first and second conductive layers 321 and 322 may be selected to have good adhesion properties to the first and second frames 111 and 112 . In addition, a material constituting the first and second conductive layers 321 and 322 may be selected to have poor adhesion properties to the resin part and the body 113 .

Accordingly, the first conductive layer 321 overflows from the first opening TH1 in the direction of the region where the resin part or the body 113 is provided, and is outside the region where the resin part or the body 113 is provided. It is prevented from overflowing or spreading, and the first conductive layer 321 can be stably disposed in the region in which the first opening TH1 is provided. Accordingly, when the first conductive layer 321 disposed in the first opening TH1 overflows, the first conductive layer 321 flows into the outer region of the first lower recess R10 provided with the resin part or the body 113 . It is possible to prevent the conductive layer 321 from expanding. In addition, the first conductive layer 321 can be stably connected to the lower surface of the first bonding pad 121 in the first opening TH1 . Therefore, when the light emitting device package is mounted on a circuit board, it is possible to prevent the problem that the first conductive layer 321 and the second conductive layer 322 come into contact with each other and short circuit, and the first and second conductive layers ( In the process of disposing 321 and 322 , it may be very easy to control the amounts of the first and second conductive layers 321 and 322 .

The first conductive layer 321 may be disposed to extend from the first opening TH1 to the first lower recess R10 . Accordingly, the first conductive layer 321 and/or the resin part may be disposed in the first lower recess R10 . The second lower recess R20 may be provided on a lower surface of the second frame 112 . The second lower recess R20 may be provided to be concave from a lower surface to an upper surface of the second frame 112 . The second lower recess R20 may be spaced apart from the second opening TH2. For example, the resin parts filled in the first and second lower recesses R10 and R20 are formed by the first frame 111 , the second frame 112 , and the body 113 through an injection process or the like. It can be provided in the process of becoming.

The resin part filled in the second lower recess R20 may be disposed around a lower surface area of the second frame 112 providing the second opening TH2 . The lower surface area of the second frame 112 providing the second opening TH2 may have an island shape and may be disposed separately from the lower surface constituting the surrounding second frame 112 . For example, as shown in FIG. 2 , the lower surface area of the second frame 112 providing the second opening TH2 includes a resin part filled in the second lower recess R20 and the body 113 . ) may be isolated from the second frame 112 around it. Accordingly, the second conductive layer 322 overflows from the second opening TH2 in the direction of the region where the resin part or the body 113 is provided, and is outside the region where the resin part or the body 113 is provided. It is prevented from overflowing or spreading, and the second conductive layer 322 can be stably disposed in the region where the second opening TH2 is provided. Accordingly, when the second conductive layer 322 disposed in the second opening TH2 overflows, the second conductive layer 322 flows into an area outside the second lower recess R20 in which the resin part or the body 113 is provided. It is possible to prevent the conductive layer 322 from expanding. In addition, the second conductive layer 322 may be stably connected to the lower surface of the second bonding pad 122 in the second opening TH2 .

Therefore, when the light emitting device package is mounted on a circuit board, it is possible to prevent a problem that the first conductive layer 321 and the second conductive layer 322 come into contact with each other and short circuit, and the first and second conductive layers ( In the process of disposing 321 and 322 , it may be very easy to control the amounts of the first and second conductive layers 321 and 322 .

Also, the second conductive layer 322 may be disposed to extend from the second opening TH2 to the second lower recess R20 . Accordingly, the second conductive layer 321 and/or the resin part may be disposed in the second lower recess R20 . One or a plurality of the lower recesses R10 and R20 may be disposed in each of the frames 111 and 112 .

<Contact and non-contact area with conductive layer in electrode of light emitting device>

In the embodiment, when the conductive layers 321 and 322 are filled in the openings TH1 and TH2 and then cured, the bonding pad ( 121,122), a pulling force is generated. When the conductive layers 321 and 322 attract the bonding pads 121 and 122 of the light emitting device 120, there is a problem that the bonding pads 121 and 122 are partially separated from the light emitting unit 123, for example, the semiconductor layer. , electrode contact is reduced and the power supply efficiency may be reduced. In this case, the interface between the semiconductor layer and the bonding pads 121 and 122 may be separated, and thus power supplied to the bonding pads 121 and 122 may not be smoothly supplied to the semiconductor layer, thereby reducing device reliability.

In the embodiment, the contact area of the bonding pads 121 and 122 of the light emitting device 120 may be dispersed to a non-contact area or may be in partial contact with the conductive layers 321 and 322, thereby reducing the contact area with the conductive layers 321 and 322. . In this case, in the light emitting device 120 , since sufficient Die Shear Strength (DST) is secured by the conductive layers 321 and 322 and the adhesive 130 , the conductive layers 321 and 322 are dispersed or in partial contact, even if the It is possible to prevent the adhesive force of the light emitting device 120 from falling below a predetermined standard.

In an embodiment, a non-contact region with the conductive layers 321 and 322 in the openings TH1 and TH2 may be provided in at least one or both of the bonding pads 121 and 122 of the light emitting device 120 . At least one or both of the bonding pads 121 and 122 may include regions on the openings TH1 and TH2 that are in contact with the conductive layers 321 and 322 and are not in contact with each other. For convenience of description below, a contact region in contact with the conductive layers 321 and 322 may be defined as a non-contact region. The contact area may include one or a plurality of areas, and the non-contact area may include one or a plurality of areas. The contact area is a part of the lower surface area of the bonding pads 121 and 122 , and the non-contact area may be an open area without the electrode or an area in which an insulating material is formed on the electrode surface.

4, 8, and 9 , the first bonding pad 121 of the light emitting device 120 may include first contact regions 21 and 22 and a first non-contact region 23 . The first contact areas 21 and 22 may be divided into one or a plurality of areas, and the plurality of first contact areas 21 and 22 may be connected to each other by a first connection part 24 . The first connection part 24 may be in contact with or not in contact with the conductive layers 321 and 322 . The first connection part 24 connects power between the plurality of first contact regions 21 and 22, so that even if some regions have low contact with the conductive layers 321 and 322, the first connection part 24 Power can be delivered to another area through The first non-contact region 23 may be an empty region or may be filled with a resin part.

In the first bonding pad 121 , the first non-contact area 23 may be adjacent to the first contact areas 21 and 22 or disposed between the first contact areas 21 and 22 . An area of the first non-contact area 23 may be smaller than an area of a top surface of the first opening TH1 . The first non-contact area 23 may be smaller than or equal to the width W11 in the X direction or the length W1 in the Y direction of the first bonding pad 121 . One or more of the first non-contact regions 23 may be disposed among regions overlapping the first opening TH1 .

Referring to FIG. 8 , the width W12 in the X direction of the first opening TH1 may be less than or equal to the length W2 in the Y direction. The width W14 in the X direction of the second opening TH2 may be less than or equal to the length W6 in the Y direction. An area of an imaginary line connecting the outer edges of the first bonding pad 121 may be larger than an area of a top surface of the first opening TH1 . An area of an imaginary line connecting the outer edges of the second bonding pad 122 may be larger than an area of a top surface of the second opening TH2 . The upper surface area of the first bonding pad 121 may be smaller than or equal to the upper surface area of the second bonding pad 122, but is not limited thereto.

The second bonding pad 122 of the light emitting device 120 may include second contact regions 31 and 32 and a second non-contact region 33 . The second non-contact region 33 may be an empty region or may be filled with a resin part. The second contact areas 31 and 32 may be divided into one or a plurality of areas, and the plurality of second contact areas 31 and 32 may be connected to each other by a second connection part 34 . The second connection part 34 may be in contact with or not in contact with the conductive layers 321 and 322 . The second connection part 34 connects power between the plurality of second contact regions 31 and 32, so that even if some regions have low contact with the conductive layers 321 and 322, the second connection part 34 Power can be delivered to another area through

In the second bonding pad 122 , the second non-contact region 33 may be disposed adjacent to the second contact regions 31 and 32 or between the second contact regions 31 and 32 . An area of the second non-contact area 33 may be smaller than an area of a top surface of the second opening TH2 . The second non-contact area 33 may be smaller than or equal to the width W13 in the X direction or the length W6 in the Y direction of the second bonding pad 122 . One or a plurality of the second non-contact regions 33 may be disposed among regions overlapping the second opening TH2 .

Referring to FIG. 8 , the width W12 in the X direction of the first opening TH1 may be less than or equal to the length W2 in the Y direction. The width W14 in the X direction of the second opening TH2 may be less than or equal to the length W6 in the Y direction. Here, it may have a relationship of W12 < W11 and W14 < W13 in the X direction, and may have a relationship of W2 < W1 and W5 < W6 in the Y direction. Accordingly, the contact areas 21, 22, 31, 32 of the conductive layers 321 and 322 and the electrodes 121 and 122 can be dispersed through the first and second openings TH1 and TH2, so that the bonding pads 121 and 122 are formed. It can distribute the transmitted external force.

Here, as shown in FIG. 4 , the first bonding pad 121 is in contact with the first conductive layer 321 in which the first contact regions 21 and 22 are filled in the first opening TH1, The contact area 33 may overlap the first opening TH1 and the first conductive layer 321 in the Z direction. Since the first non-contact region 33 corresponds to the first conductive layer 321 , the first contact regions 21 and 22 may be spaced apart from the first conductive layer 321 . An upper surface of the first conductive layer 321 corresponding to the first non-contact region 23 may have a concave curved surface C1 . The first non-contact region 33 may be disposed between the first contact regions 21 and 22 in the Y direction or may be disposed adjacent to a center of the light emitting device 120 rather than an edge portion in the Y direction.

As shown in FIG. 5 , the second bonding pad 122 is in contact with the second conductive layer 322 in which the second contact regions 31 and 32 are filled in the first opening TH1, and the second non-contact The region 33 may overlap the second opening TH2 and the second conductive layer 322 in the Z direction. Since the second non-contact region 33 corresponds to the second conductive layer 322 , the second contact regions 31 and 32 may be spaced apart from the second conductive layer 322 . An upper surface of the second conductive layer 322 corresponding to the second non-contact region 33 may include a concave curved surface C1 . The second non-contact region 33 may be disposed between the second contact regions 31 and 32 in the Y-direction, or may be disposed adjacent to the center of the light emitting device 120 rather than an edge portion in the Y-direction.

At least one of the adhesive 130 and the resin part 135 as shown in FIG. 23 may be disposed outside the first and second non-contact areas 23 and 33 of the first and second bonding pads 121 and 122, It is possible to block the flow of the conductive layer.

A contact area between the conductive layers 321 and 322 and the bonding pads 121 and 122 may be smaller than a top surface area of each of the openings TH1 and TH2 due to a non-contact area. Each contact area of the bonding pads 121 and 122 may have a circular shape, a polygonal shape, an elliptical shape, or a shape having a curved line or a straight line. A non-contact area of each of the bonding pads 121 and 122 may be opened downward and may be opened in at least one of an X direction, a Y direction, and a diagonal direction, and the bottom view shape may have a circular shape, a polygonal shape, an elliptical shape, or an irregular shape. It may include a shape.

8 and 9 , when the first and second conductive layers 321 and 322 are in contact with the first and second contact regions 21 , 22 , 31 and 32 of the bonding pads 121 and 122 , the first Areas of the ,2 contact regions 21, 22, 31, and 32 are the areas of the portions 20 and 30 overlapping the first and second openings TH1 and TH2, and are the areas of the first and second conductive layers 321 and 322. It may be larger than the area of the particles 320 or powder (hereinafter described as particles) constituting the . The particle 320 may include a range of 10 micrometers or more, for example, a range of 10 to 40 micrometers, and a range of 20 to 40 micrometers. When the material of the particle 320 is out of the above range, printability and wettability of the solder paste filled in the openings TH1 and TH2 may be deteriorated, and thus high reliability may not be maintained.

Areas of portions 20 and 30 overlapping the first and second openings TH1 and TH2 in the first and second contact regions 21 , 22 , 31 and 32 of the bonding pads 121 and 122 are equal to the area of the particles 320 . ) may be more than twice the area of the For example, when the radius of the particle 320 is r, the minimum area of each contact region 21 , 22 , 32 , 33 in contact with each of the first and second conductive layers 321 and 322 is a particle obtained by ðХr ² . It may be more than twice the area, for example, more than the area of nХðХr ² , and may be greater than or equal to n Cheng2. Since the first and second contact areas 21, 22, 31, and 32 of the first and second bonding pads 121 and 122 are provided at least twice the area of the particle 320, the printability of the solder paste, Wettability can be improved and a high degree of reliability can be maintained.

The minimum area overlapping the first and second openings TH1 and TH2 in the first and second non-contact areas 23 and 33 of the bonding pads 121 and 122 may be 1.5 times or more of the size of the particle 320 . there is. For example, when the radius of the particle 320 is r, the minimum area of the non-contact regions 23 and 33 that are not in contact with each of the first and second conductive layers 321 and 322 is 1.5 times the area obtained by ðХr ² . may be more than Since the first and second non-contact areas 23 and 33 of the first and second bonding pads 121 and 122 are provided to be at least 1.5 times the area of the particle 320, the first and second conductive layers 321 and 322 ) can reduce the area in contact with the bonding pads 121 and 122 on the openings TH1 and TH2, and can distribute the force pulling each bonding pad 121 and 122, resulting in poor contact between the bonding pads 121 and 122. can be reduced and reliability can be improved.

As shown in FIG. 8 , when the non-contact areas 23 and 33 are formed in the X direction in the bonding pads 121 and 122 , the widths W31 , W41 and W42 of the contact areas 21 , 22 , 31 and 32 in the Y direction are It may be more than twice the particle diameter, for example, it may be in the range of 2 times to 4 times. The widths W31, W41, and W42 may be formed in a range of 40 micrometers or more, for example, 40 to 100 micrometers. The widths W32 and W43 in the Y direction of the non-contact regions 23 and 33 may be 1.5 times or more of the diameter of the particle diameter. The widths W32 and W43 in the Y direction of the non-contact regions 23 and 33 may be formed in a range of 30 micrometers or more, for example, 30 micrometers to 80 micrometers. The width of the non-contact regions 23 and 33 in the X direction may be equal to or greater than the widths W32 and W43 in the Y direction. When the contact areas 21 , 22 , 31 , 32 and the non-contact areas 23 and 33 of the bonding pads 121 and 122 have the above widths, each of the contact areas 21 , 22 , 31 and 32 is It is possible to distribute the pulling force of the bonding pads 121 and 122 , thereby reducing defects of the bonding pads 121 and 122 and improving reliability.

6 , a protective layer 129 may be disposed around the first bonding pad 121 . The protective layer 129 may expose a region that does not cover the bottom surface of the first bonding pad 121 , for example, a region that faces the first frame 111 . The protective layer 129 may have a thickness smaller than that of the first bonding pad 121 and may support and protect the first bonding pad 121 . Adhesive forces F1 and F2 between the first conductive layer 321 and the first bonding pad 121 may be dispersed in the first opening TH1. The non-contact region 23 of the first bonding pad 121 may be disposed on the passivation layer 129 to face the conductive layers 321 and 322 . The second bonding pad 122 and the protective layer 129 disposed around the second bonding pad 122 may have the same configuration as described above, and the above description will be referred to.

7 , a protective layer 129 may be disposed around the first bonding pad 121 . The protective layer 129 may cover an outer periphery of the bottom surface of the first bonding pad 121 and expose an inner region of the bottom surface of the first bonding pad 121 . When the first conductive layer 321 is in contact with the bottom surface of the first bonding pad 121 , the protective layer 129 may support the first bonding pad 121 . Here, the protective layer 129 may partially contact the first conductive layer 321 , or may include a non-contacting portion or a non-contacting portion. Adhesive forces F1 and F2 between the first conductive layer 321 and the first bonding pad 121 may be dispersed in the first opening TH1. The area of the non-contact region 23 may be adjusted by the protective layer 129 disposed on the first bonding pad 121 . The non-contact region 23 of the first bonding pad 121 may be disposed on the passivation layer 29 to face the first conductive layer 321 . The second bonding pad 122 and the protective layer 129 disposed around the second bonding pad 122 will be referred to above, and the above description will also be referred to.

As shown in FIGS. 4 and 5 , when the conductive layers 321 and 322 are filled in the first and second openings TH1 and TH2 , the filled conductive layers 321 and 322 are the contact areas 21 and 22 of the bonding pads 121 and 122 . , 31 , 32 ), and may leak laterally through the non-contact regions 23 , 33 . For example, as shown in FIG. 8 , the conductive layers 321 and 322 may flow out in the lateral directions F3 and F4 in which the non-contact areas 23 and 33 of the bonding pads 121 and 122 are opened. At this time, as shown in FIG. 3 , the adhesive 130 may be in contact between the light emitting device 120 and the body 113 to prevent the conductive layers 321 and 322 from leaking in the adhesive 130 direction.

As shown in FIG. 8 , the connection parts 124 and 134 of the bonding pads 121 and 122 are adjacent to the frames 111 and 112 or are adhered to the conductive layers 321 and 322 , so that the conductive layers 321 and 322 can be blocked from flowing out as shown in FIG. 3 . there is.

10 illustrates another example of the opening and the electrode, the Y-direction length W2 of the first opening TH1 may be greater than the Y-direction length W1 of the first bonding pad 121 . The Y-direction length W5 of the second opening TH2 may be greater than the Y-direction length W6 of the second bonding pad 122 . This means that the lengths W1 and W5 of at least one of the first and second bonding pads 121 and 122 in the Y direction may be smaller than the lengths W2 and W6 of at least one of the first and second openings TH1 and TH2 in the Y direction. there is. In this case, the non-contact areas of the bonding pads 121 and 122 may be further increased.

11 , at least one of the plurality of electrodes 121 includes an inner contact area 21A and an outer contact area 21B, and the inner contact area 21A and the outer contact area 21B. A non-contact area 23 may be disposed therebetween. The non-contact area 23 may separate the inner and outer contact areas 21A and 21B. When the bonding pads 121 are separated into inner and outer contact areas 21A and 21B, they can be connected to each other in different patterns. The electrode may be applied to the first and second electrodes as shown in FIG. 12 .

12 , a non-contact area 123 may be disposed between the inner and outer contact areas 121A and 121B of the first bonding pad 121 . In this case, the external contact area 121B may be electrically connected to the frame 111 . The second bonding pad 122 may have a non-contact area 33 disposed between the inner and outer contact areas 31A and 32A, and may be electrically connected to the frame 122 . In this case, the contact areas 121A, 122A, 131A, and 132A of the first and second bonding pads 121 and 122 may have a contact area with the frames 111 and 112 larger than a contact area with the conductive layers 321 and 322 . Accordingly, even when the contact areas 121A, 122A, 131A, and 132A of the bonding pads 121 and 122 are separated, deterioration of electrical characteristics can be prevented and the force of pulling the electrodes can be reduced. The width of the outer contact regions 21B and 32A may be more than twice the diameter of the pike, so that they may be stably connected to the frames 111 and 112 .

A top area of the first bonding pad 121 may be the same as or smaller than a top area of the second bonding pad 122 . A top area of the first opening TH1 may be the same as or smaller than a top area of the second opening TH2 .

Referring to FIG. 13 , in at least one of the plurality of electrodes, a plurality of contact areas 21A and 21B may be connected to each other by a connection part 24 . The position of the connection part 24 may be a center position of the plurality of contact areas 21A and 21B, but is not limited thereto. The connecting portion 24 may extend in a direction perpendicular to or inclined with respect to each of the contact areas 21A and 21B, but is not limited thereto. The connection part 24 may be one or plural. The connection part 24 may be a region in contact with the conductive layers 321 and 322 . The shape of the electrode may be applied as shown in FIG. 14 .

Referring to FIG. 14 , the first bonding pad 121 may include a connection part 24 between the plurality of contact regions 21A and 21B, and a non-contact region 23 on both sides of the connection part 24 . there is. The first bonding pad 121 may have a connection portion 24 connected between the plurality of contact regions 21A and 21B to be in contact with the conductive layer. The non-contact area 23 of the first bonding pad 121 may be separated on both sides by the connection part 24 . The minimum width of the connection part 24 may be larger or smaller than the particle diameter, but is not limited thereto. The first bonding pad 121 may have a connection portion 24 disposed between the plurality of contact regions 21A and 21B, respectively, and may be in contact with a conductive layer). The width of the first bonding pad 121 in the X direction and the length in the Y direction may be greater than that of the opening.

In the second bonding pad 122 , a connection part 34 may be disposed between the plurality of contact regions 31A and 31B, and a non-contact region 33 may be disposed on both sides of the connection part 34 . The second bonding pad 122 has a connection portion 34 disposed between the plurality of contact regions 31A and 31B, respectively, and may be in contact with the conductive layer. The second bonding pad 122 may have a width in an X-direction and a length in the Y-direction greater than that of the opening.

A top area of the first bonding pad 121 may be the same as or smaller than a top area of the second bonding pad 122 . A top area of the first opening TH1 may be the same as or smaller than a top area of the second opening TH2 .

15 to 18 are modified examples of the electrode according to the embodiment.

15 , in the bonding pads 121 and 122 , the inner contact area 25 and the outer contact area 26 may be connected to each other by the connecting portion 27 in a diagonal direction. In the external contact area 26 , two or more non-contact areas 28 may be disposed by the connection part 27 . The minimum width of the non-contact area 28 may be 1.5 times or more of the particle diameter, and the minimum width of the contact area 25 and 26 may be 2 times or more of the particle diameter. Printability and wettability of the solder paste serving as the conductive layer may be improved by the dispersed contact regions 25 and 26, and high reliability may be maintained. The inner and outer contact regions 25 and 26 may have a circular shape or a polygonal shape.

As shown in FIG. 16 , in the bonding pads 121 and 122 , a plurality of contact areas 35 and 36 may be disposed at corners of a polygonal shape, and the contact areas 35 and 36 may be connected to each other by a connection part 37 . Each of the contact areas 35 and 36 may have a circular shape, a polygonal shape, or an elliptical shape. Each of the contact areas 35 and 36 may include a shape having a curved line or a straight line. A non-contact area 37 may be formed between the respective contact areas 35 and 36 . The minimum width of the non-contact area 37 may be 1.5 times or more of the particle diameter, and the minimum width of the contact areas 35 and 36 may be twice or more of the particle diameter. Printability and wettability of the solder paste serving as the conductive layers 321 and 322 may be improved, and high reliability may be maintained.

17 , in the bonding pads 121 and 122 , a plurality of contact areas 41 and 42 may be arranged in a matrix form, and the id contact areas 41 and 42 may be connected to each other by a connection part 44 . A non-contact area 43 may be formed between the respective contact areas 41 and 42 . Two or three or more of the non-contact areas 43 may be separated by the connection part 44 . The contact areas 41 and 42 are disposed to surround at least three sides of the non-contact area 43 , and the non-contact area 43 may be smaller than an area of the contact areas 41 and 42 .

The minimum width of the non-contact region 43 may be 1.5 times or more of the particle diameter, and the minimum width of the contact regions 41 and 42 may be twice or more of the particle diameter. By disposing the contact regions 35 and 36 around the non-contact region 38, printability and wettability of the solder paste during bonding with the conductive layer can be improved and high reliability can be maintained.

18 , in the bonding pads 121 and 122 , a contact area 45 may be disposed around the non-contact area 47 . The contact area 45 blocks the circumference of the non-contact area 47 , and may be disposed to be larger than an area of the non-contact area 47 . The minimum width of the non-contact area 47 may be 1.5 times or more of the particle diameter, and the minimum width of the contact area 45 may be 2 times or more of the particle diameter. By disposing the contact area 45 around the non-contact area 47 , printability and wettability of the solder paste during bonding with the conductive layer can be improved and high reliability can be maintained.

In an embodiment, the first and second bonding pads 121 and 122 may be connected to the conductive layer through the contact region, and may be separated from the conductive layer through the opening through the non-contact region. The contact region may be electrically connected to the frame through the conductive layer. In this case, in the contact area of the first and second bonding pads 121 and 122 , an area in contact with the frame may be larger than an area in contact with the conductive layer. Accordingly, even when the contact regions of the respective electrodes are separated, deterioration of electrical properties can be prevented and the force of pulling the electrodes can be reduced. The width of the outer contact area may be more than twice the diameter of the pike, so that it may be stably connected to the frame.

As another example, the light emitting device package 100 according to the embodiment may include a resin part 135 as shown in FIG. 23 . The resin part 135 may be disposed between the first frame 111 and the light emitting device 120 . The resin part 135 may be disposed between the second frame 112 and the light emitting device 120 . The resin part 135 may be provided on the bottom surface of the cavity C provided in the package body 110 .

The resin part 135 may be disposed on a side surface of the first bonding pad 121 . The resin part 135 may be disposed on a side surface of the second bonding pad 122 . The resin part 135 may be disposed under the semiconductor layer 123 .

For example, the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. there is. In addition, the resin part 135 may be a reflective part that reflects the light emitted from the light emitting device 120 , for example, may be a resin including a reflective material such as TiO ₂ , or may be made of white silicone. may include

The resin part 135 may be disposed under the light emitting device 120 to perform a sealing function. In addition, the resin part 135 may improve adhesion between the light emitting device 120 and the first frame 111 . The resin part 135 may improve adhesion between the light emitting device 120 and the second frame 112 .

The resin part 135 may seal the periphery of the first bonding pad 121 and the second bonding pad 122 . In the resin part 135 , the first conductive layer 321 and the second conductive layer 322 leave the first opening TH1 region and the second opening TH2 region in the light emitting device 120 . It can be prevented from spreading and moving in the direction of the outer surface. When the first and second conductive layers 321 and 322 diffuse and move toward the outer surface of the light emitting device 120 , the first and second conductive layers 321 and 322 are formed between the active layer of the light emitting device 120 and It may come into contact with it and cause a defect due to a short circuit. Accordingly, when the resin part 135 is disposed, it is possible to prevent a short circuit between the first and second conductive layers 321 and 322 and the active layer, thereby improving the reliability of the light emitting device package according to the embodiment.

In addition, when the resin part 135 includes a material having a reflective characteristic, such as white silicon, the resin part 135 transmits the light provided from the light emitting device 120 in the upper direction of the package body 110 . It is possible to improve the light extraction efficiency of the light emitting device package 100 by reflecting it.

On the other hand, according to another example of the light emitting device package according to the embodiment of the present invention, the resin part 135 is not provided separately, and the molding part 140 is formed between the first frame 111 and the second frame ( 112) may be arranged to be in direct contact.

24 is another example of a light emitting device package according to an embodiment.

Referring to FIG. 24 , in the light emitting device package, a first upper recess R3 may be disposed on the first frame 111 and a second upper recess R4 may be disposed on the second frame 112 . The first upper recess R3 may be provided on an upper surface of the first frame 111 . The first upper recess R3 may be provided to be concave in a direction from an upper surface to a lower surface of the first frame 111 . The first upper recess R3 may be spaced apart from the first opening TH1. The first upper recess R3 may have a top view shape adjacent to three sides of the first bonding pad 121 . For example, the first upper recess R3 may be provided in a shape surrounding three or more sides of the first bonding pad 121 .

The second upper recess R4 may be provided on the upper surface of the second frame 112 . The second upper recess R4 may be provided to be concave in a direction from an upper surface to a lower surface of the second frame 112 . The second upper recess R4 may be spaced apart from the second opening TH2. The second upper recess R4 may have a top view shape adjacent to three sides of the second bonding pad 122 . For example, the second upper recess R4 may be formed along three sides of the second bonding pad 122 .

The resin part 135 may be provided in the first upper recess R3 and the second upper recess R4 . The resin part 135 may be disposed on a side surface of the first bonding pad 121 . The resin part 135 may be provided in the first upper recess R3 , and may extend to a region where the first bonding pad 121 is disposed. The resin part 135 may be disposed under the semiconductor layer 123 .

A distance L11 from an end of the first upper recess R3 to an adjacent end of the light emitting device 120 may be several hundred micrometers or less. For example, a distance L11 from an end of the first upper recess R3 to an adjacent end of the light emitting device 120 may be equal to or smaller than 200 micrometers.

The distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 is determined by the viscosity of the resin part 135 filled in the first upper recess R3, etc. can be determined by

The distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 is determined by the amount of the resin part 135 applied to the first upper recess R3 of the second upper recess R3. 1 It may be selected as a distance that can be formed by extending to an area in which the bonding pad 121 is disposed.

Also, the resin part 135 may be disposed on a side surface of the second bonding pad 122 . The resin part 135 may be provided in the second upper recess R4 , and may extend to an area where the second bonding pad 122 is disposed. The resin part 135 may be disposed under the semiconductor layer 123 .

Also, the resin part 135 may be provided on a side surface of the semiconductor layer 123 . Since the resin part 135 is disposed on the side surface of the semiconductor layer 123 , it is possible to effectively prevent the first and second conductive layers 321 and 322 from moving to the side surface of the semiconductor layer 123 . In addition, when the resin part 135 is disposed on the side surface of the semiconductor layer 123 , it may be disposed under the active layer of the semiconductor layer 123 , and thus the light extraction efficiency of the light emitting device 120 . can improve

The first upper recess R3 and the second upper recess R4 may provide a sufficient space for the resin part 135 to be provided. For example, the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. there is. Also, the resin part 135 may include a reflective material, for example, TiO ₂ and/or white silicone including silicone.

The resin part 135 may be disposed under the light emitting device 120 to perform a sealing function. In addition, the resin part 135 may improve adhesion between the light emitting device 120 and the first frame 111 . The resin part 135 may improve adhesion between the light emitting device 120 and the second frame 112 .

The resin part 135 may seal the periphery of the first bonding pad 121 and the second bonding pad 122 . In the resin part 135 , the first conductive layer 321 and the second conductive layer 322 leave the first opening TH1 region and the second opening TH2 region in the light emitting device 120 . It can be prevented from spreading and moving in the direction.

When the resin part 135 includes a material having a reflective characteristic, such as white silicon, the resin part 135 reflects the light provided from the light emitting device 120 in an upward direction of the package body 110 . Thus, the light extraction efficiency of the light emitting device package 100 can be improved.

Meanwhile, in the light emitting device package, the first conductive layer 321 and the second conductive layer 322 are first formed in the opening, and the resin part 135 and the molding part 140 are formed, or the number The branch 135 and the molding part 140 may be formed first, and the first conductive layer 321 and the second conductive layer 322 may be formed later. In addition, according to another example of the method for manufacturing a light emitting device package according to the embodiment, the resin part 135 may not be formed, but only the molding part 140 may be formed in the cavity of the package body 110 .

The light emitting device package 100 according to the embodiment described above may be supplied by being mounted on a sub-mount or a circuit board. However, when a conventional light emitting device package is mounted on a sub-mount or a circuit board, a high-temperature process such as reflow may be applied. In this case, in the reflow process, a re-melting phenomenon occurs in the bonding region between the light emitting device and the lead frame provided in the light emitting device package, so that the stability of electrical connection and physical bonding may be weakened. However, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first bonding pad and the second bonding pad of the light emitting device according to the embodiment may receive driving power through the conductive layer disposed in the opening. . In addition, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than that of a general bonding material.

Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main board or the like through a reflow process, a re-melting phenomenon does not occur, so electrical connection and physical bonding force are not deteriorated. There is no advantage.

In addition, according to the light emitting device package 100 according to the embodiment, there is no need to expose the package body 110 to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature.

Accordingly, the selection range for materials constituting the body 113 can be widened. According to an embodiment, the body 113 may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material. For example, the body 113 includes at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin, and SMC (Silicone Molding Compound) resin. can do.

<Light source module>

Referring to FIG. 25 , in the light source module 300 according to the embodiment, one or a plurality of light emitting device packages 100 may be disposed on a circuit board 310 .

The circuit board 310 may include a first pad 311 , a second pad 312 , and a substrate 313 . A power supply circuit for controlling driving of the light emitting device 120 may be provided on the substrate 313 .

It is connected to the first pad 311 of the circuit board 310 through the first conductive layer 321 of the first opening TH1 of the light emitting device package 100 to supply power to the first bonding pad 121 . The circuit board 310 may be connected to the second pad 312 through the second conductive layer 322 of the second opening TH2 , such that power may be connected to the second bonding pad 122 . The substrate 313 of the circuit board 310 may be a flexible or non-flexible member.

The package body 110 may be disposed on the circuit board 310 . The first pad 311 and the first bonding pad 121 may be electrically connected to each other. The second pad 312 and the second bonding pad 122 may be electrically connected to each other. The first pad 311 and the second pad 312 may include a conductive material. For example, the first pad 311 and the second pad 312 may be selected from among Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, and Al. It may include at least one selected material or an alloy thereof. The first pad 311 and the second pad 312 may be provided in a single layer or in multiple layers.

When the first frame 111 and the second frame 112 are formed of an insulating frame, power may be supplied through the first and second conductive layers 321 and 322 . When the first frame 111 and the second frame 112 are formed of conductive frames, power may be supplied through the first and second conductive layers 321 and 322 and the first and second frames 111 and 112 .

26 is another example of a light source module having a light emitting device package according to an embodiment.

Referring to FIG. 26 , one or a plurality of light emitting device packages 100 may be disposed on a circuit board 410 . The circuit board 410 may include a first pad 411 , a second pad 412 , and a substrate 413 . A power supply circuit for controlling driving of the light emitting device 120 may be provided on the substrate 313 .

The package body 110 may be disposed on the circuit board 410 . The first pad 411 and the first bonding pad 121 may be electrically connected to each other. The second pad 412 and the second bonding pad 122 may be electrically connected to each other.

According to an embodiment, the first pad 411 of the circuit board 410 may be electrically connected to the first conductive layer 321 . Also, the second pad 412 of the circuit board 410 may be electrically connected to the second conductive layer 322 . The first pad 411 may be electrically connected to the first frame 111 . Also, the second pad 412 may be electrically connected to the second frame 112 . According to an embodiment, a separate bonding layer may be additionally provided between the first pad 411 and the first frame 111 . In addition, a separate bonding layer may be additionally provided between the second pad 412 and the second frame 112 . According to the light emitting device package according to the embodiment, the first bonding pad and the second bonding pad of the light emitting device may receive driving power through the conductive layer disposed in the opening. In addition, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than that of a general bonding material. The light emitting device package according to the embodiment has an advantage in that electrical connection and physical bonding strength are not deteriorated because a re-melting phenomenon does not occur even when bonding to a main substrate or the like through a reflow process. According to the light emitting device package according to the embodiment, there is no need to expose the package body 110 to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature.

The light emitting device package 100 according to the embodiment may be supplied by being mounted on a sub-mount or a circuit board. However, when a conventional light emitting device package is mounted on a sub-mount or a circuit board, a high-temperature process such as reflow may be applied. In this case, in the reflow process, a re-melting phenomenon may occur in the bonding region between the frame provided in the light emitting device package and the light emitting device, and thus the stability of electrical connection and physical coupling may be weakened, and thus the position of the light emitting device may change, and optical and electrical characteristics and reliability of the light emitting device package may be deteriorated. However, according to the light emitting device package according to the embodiment, the first bonding pad and the second bonding pad of the light emitting device according to the embodiment may receive driving power through the conductive layer disposed in the opening. In addition, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than that of a general bonding material. Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main board or the like through a reflow process, a re-melting phenomenon does not occur, so electrical connection and physical bonding force are not deteriorated. There is no advantage.

<Second embodiment>

27 and 28 are side cross-sectional views of a light emitting device package according to the second embodiment.

27 and 28 , the light emitting device package 300 may include a body 110B and a light emitting device 120 .

The body 110B may provide a concave cavity C in the upper portion. The cavity C may reflect incident light in an upward direction. The cavity C may have a side inclined with respect to the bottom surface. The body 110B includes polyphthalamide (PPA: Polyphthalamide), PCT (Polychloro Triphenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy molding compound (EMC), and silicone molding compound. (SMC), ceramic, PSG (photo sensitive glass), sapphire (Al ₂ O ₃ ) It may be formed of at least one selected from the group consisting of. Also, the body 110B may include a high refractive filler such as TiO ₂ and SiO ₂ .

According to an embodiment, the light emitting device 120 may include a first bonding pad 121 , a second bonding pad 122 , and a light emitting unit 123 having a semiconductor layer. The configuration of the light emitting device 120 will be referred to the description of the embodiment disclosed above. 29 and 30 , the first bonding pad 1172 may have a different size depending on the area of the contact area. 30 is an example in which the sizes of the contact area and the non-contact area are changed by changing the shapes and sizes of the first and second bonding pads 1172 and 1171 of FIG. 29 .

The light emitting device 120 may be disposed on the body 110 . The first bonding pad 121 may be disposed on a lower surface of the light emitting device 120 . The second bonding pad 122 may be disposed on a lower surface of the light emitting device 120 .

The body 110B may include a plurality of openings, for example, a first opening TH1 and a second opening TH2. The first opening TH1 may be disposed under the first bonding pad 121 of the light emitting device 120 and penetrate through the lower portion of the body 110B. The first opening TH1 may be provided to overlap the first bonding pad 121 of the light emitting device 120 . The second opening TH2 may be disposed under the second bonding pad 122 of the light emitting device 120 and may be provided through a lower portion of the body 110B. The second opening TH2 may be provided to overlap the second bonding pad 122 of the light emitting device 120 .

At least one or both of the first bonding pad 121 and the second bonding pad 122 may include the contact area and the non-contact area described above, and for detailed description, reference will be made to the description disclosed above. . For example, the first bonding pad 121 may include first contact regions 21 and 22 and first non-contact regions 33 and 23 as shown in FIG. 28 .

The body 110B may include a recess (R). The recess R may be provided concavely from the bottom surface of the cavity C to the lower surface of the body 110B. The recess R may be disposed under the light emitting device 120 , and may be disposed to overlap a region between the first and second bonding pads 121 and 122 .

The adhesive 130 may be disposed in the recess (R). The adhesive 130 may be disposed between the light emitting device 120 and the bottom surface of the cavity (C). The adhesive 130 may be disposed between the first bonding pad 121 and the second bonding pad 122 . For example, the adhesive 130 may be disposed in contact with the side surface of the first bonding pad 121 and the side surface of the second bonding pad 122 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 110B. The adhesive 130 may be disposed, for example, in direct contact with the bottom surface of the cavity C of the body 110 . In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120 . For example, the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. .

The adhesive 130 may provide a light diffusion function between the light emitting device and the body when light is emitted to the lower surface of the light emitting device 120 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120 , the adhesive 130 provides a light diffusion function, thereby improving the light extraction efficiency of the light emitting device package 300 .

According to an embodiment, the depth T1 of the recess R may be smaller than the depth T2 of the openings TH1 and TH2. The depth T1 of the recess R may be determined in consideration of the adhesive force of the adhesive 130 . In addition, the recess (R) depth (T1) is a crack in the light emitting device package 300 due to the heat emitted from the light emitting device 120 and/or considering the stable strength of the mount portion 111 and / or may be decided not to occur.

The recess R may provide an appropriate space under the light emitting device 120 in which a kind of underfill process may be performed. For example, the depth T1 of the recess R may be 40 micrometers or more, for example, 40 to 60 micrometers.

180 micrometers or more, for example, 180 to 220 micrometers, of the first and second openings TH1 and TH2 may be provided. By way of example, the depth T2-T1 may be selected to be at least 100 micrometers or more. According to an embodiment, the ratio (T2/T1) of the depth T1 to the depth T2 may be 2 to 10. For example, when the depth of T2 is provided as 200 micrometers, the depth of T1 may be provided as 20 micrometers to 100 micrometers.

The Y-direction length of the recess R may be greater than the length of the first and second openings TH1 and TH2). The lengths in the Y direction of the first and second openings TH1 and TH2 may be smaller than the length in the short axis direction of the light emitting device 120 . Also, the Y-direction length of the recess R may be greater or smaller than the short-axis length of the light emitting device 120 .

Conductive layers 411 and 412 may be disposed in the first and second openings TH1 and TH2, and the conductive layers 411 and 412 are conductive materials, and may be connected to and in contact with the first and second bonding pads 121 and 122. . The conductive layers 411 and 412 may include one material selected from the group consisting of Ag, Au, Pt, Sn, Cu, Zn, In, Bi, contact, Ti, or an alloy thereof. The conductive layers 411 and 412 are solder paste, and may be formed of powder or a mixture of particles and flux. The solder paste may include Sn-Ag-Cu, and the weight % of each metal may vary. For example, the first conductive layer 411 and the second conductive layer 412 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, or the like, and may be configured as a multi-layer made of different materials or a multi-layer or a single layer made of an alloy.

The conductive layers 411 and 412 may contact the contact area of each bonding pad 121 and 122 on the openings TH1 and TH2 and may not contact the non-contact area. For this configuration, reference will be made to the description of the first embodiment. Since the conductive layers 411 and 412 have a non-contact area with the bonding pads 121 and 122 on each of the openings TH1 and TH2, damage to the bonding pads 121 and 122 by the conductive layers 411 and 412 can be blocked. That is, since the conductive layers 411 and 412 can disperse the force pulling the bonding pads 121 and 122 , damage to the electrodes can be prevented.

The package of FIGS. 28 and 29 may include the resin part as disclosed above, or may include the resin part and the upper recess.

<Light emitting element>

In the light emitting device package according to the embodiment, for example, a flip chip light emitting device may be provided. For example, the flip chip light emitting device may be provided as a transmissive flip chip light emitting device that emits light in six directions, or may be provided as a reflective flip chip light emitting device that emits light in five directions. The reflective flip-chip light emitting device that emits light in the five-side direction may have a structure in which an insulating layer is disposed in a direction close to the body. For example, in the reflective flip-chip light emitting device, an insulating insulating layer (eg, Distributed Bragg Reflector, Omni Directional Reflector, etc.) and/or a conductive insulating layer (eg, Ag, Al, Ni, Au, etc.) may include In addition, the flip-chip light emitting device emitting light in the six-sided direction has a first bonding pad electrically connected to the first conductivity type semiconductor layer, and a second bonding pad electrically connected to the second conductivity type semiconductor layer, It may be provided as a horizontal light emitting device that emits light between the first bonding pad and the second bonding pad.

In addition, the flip-chip light emitting device emitting light in the six-plane direction is a transmissive flip-chip light emitting device including both a reflective region in which an insulating layer is disposed between the first and second bonding pads and a transmissive region through which light is emitted. can be provided as

Here, the transmissive flip-chip light emitting device refers to a device that emits light to the upper surface, four side surfaces, and six surfaces of the lower surface. In addition, the reflective flip-chip light emitting device refers to a device that emits light to five surfaces of the upper surface and four side surfaces.

Then, an example of a flip-chip light emitting device applied to a light emitting device package according to an embodiment of the present invention will be described with reference to the accompanying drawings.

First, a light emitting device according to an embodiment of the present invention will be described with reference to FIGS. 29 to 31 . 29 is a plan view showing a light emitting device according to an embodiment of the present invention, FIG. 30 is an example in which the sizes of the first and second electrodes of FIG. 29 are arranged differently, and (a) (b) of FIG. 31 is a view of FIG. It is a diagram for explaining the first bonding pad and the second bonding pad along the A-A line.

In FIG. 29 , the first electrode and the second bonding pad 1171 are disposed under the first bonding pad 1172 and the second bonding pad 1171 , but are electrically connected to the first bonding pad 1172 . ) is shown so that the second electrode electrically connected to the can be seen.

The light emitting device 1100 according to the embodiment may include a light emitting structure 1110 disposed on a substrate 1105 as shown in FIG. 31 . The substrate 1105 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 1105 may have a concave-convex pattern formed on an upper surface thereof, and may be provided as, for example, a patterned sapphire substrate (PSS).

The light emitting structure 1110 may include a first conductivity type semiconductor layer 1111 , an active layer 1112 , and a second conductivity type semiconductor layer 1113 . The active layer 1112 may be disposed between the first conductivity-type semiconductor layer 1111 and the second conductivity-type semiconductor layer 1113 . For example, the active layer 1112 may be disposed on the first conductivity-type semiconductor layer 1111 , and the second conductivity-type semiconductor layer 1113 may be disposed on the active layer 1112 .

According to an embodiment, the first conductivity-type semiconductor layer 1111 may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 1113 may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity-type semiconductor layer 1111 may be provided as a p-type semiconductor layer, and the second conductivity-type semiconductor layer 1113 may be provided as an n-type semiconductor layer.

The light emitting device 1100 according to the embodiment may include an ohmic contact layer. The ohmic contact layer may improve current diffusion to increase light output. For example, the ohmic contact layer may include at least one selected from the group consisting of a metal, a metal oxide, and a metal nitride. The ohmic contact layer may include a light-transmitting material. The ohmic contact layer is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), or indium gallium zinc (IGZO). oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/ It may include at least one selected from the group including Au/ITO, Pt, Ni, Au, Rh, and Pd.

The light emitting device 1100 according to the embodiment may include an insulating layer as shown in FIGS. 29 and 31 . The insulating layer may include a first insulating layer and a second insulating layer. The insulating layer may be disposed on the ohmic contact layer. The first insulating layer may include a plurality of second openings exposing an upper surface of the first conductivity-type semiconductor layer 1111 . The second insulating layer may include a first opening exposing the ohmic contact layer. The second insulating layer may include a plurality of first openings disposed on the ohmic contact layer. Light emitted between the first insulating layer and the second insulating layer may be incident on the adhesive 130 disposed in the recess R region. The light emitted in the downward direction of the light emitting device may be diffused by the adhesive (130 in FIG. 3 ), and light extraction efficiency may be improved. Another insulating layer may be further disposed between the first and second insulating layers to reflect light incident in the direction of the adhesive.

At least one of the insulating layers may be provided as an insulating insulating layer. For example, the insulating insulating layer may be provided as a DBR (Distributed Bragg Reflector) layer. In addition, the insulating insulating layer may be provided as an ODR (Omni Directional Reflector) layer. In addition, the insulating insulating layer may be provided by stacking a DBR layer and an ODR layer.

As shown in FIG. 29 , the light emitting device 1100 according to the embodiment may include a first electrode and a second electrode. The first electrode may be electrically connected to the first conductivity-type semiconductor layer 1111 inside the second opening. The first electrode may be disposed on the first conductivity-type semiconductor layer 1111 . The first electrode passes through the second conductivity type semiconductor layer 1113 and the active layer 1112 and extends to a partial region of the first conductivity type semiconductor layer 1111 in a recess of the first conductivity type semiconductor layer. 1111 may be disposed on the upper surface. The first electrode may be electrically connected to the upper surface of the first conductivity-type semiconductor layer 1111 through a second opening provided in the first insulating layer. The second opening and the recess may vertically overlap. For example, the first electrode may include the first conductivity type semiconductor layer 1111 in the plurality of recess regions as shown in FIGS. 29 and 31 . ) can be in direct contact with the upper surface of

The second electrode may be electrically connected to the second conductivity-type semiconductor layer 1113 . The second electrode may be disposed on the second conductivity-type semiconductor layer 1113 . In an embodiment, the ohmic contact layer may be disposed between the second electrode and the second conductivity-type semiconductor layer 1113 .

The second electrode may be electrically connected to the second conductivity-type semiconductor layer 1113 through a first opening provided in the second insulating layer. For example, as shown in FIG. 31 , the second electrode may be electrically connected to the second conductivity-type semiconductor layer 1113 in the plurality of P regions through the ohmic contact layer. As shown in FIG. 31 , the second electrode may directly contact the upper surface of the ohmic contact layer through the plurality of first openings provided in the second insulating layer in the plurality of P regions.

According to an embodiment, as shown in FIGS. 28 and 20 , the first electrode and the second electrode may have polarities and may be disposed to be spaced apart from each other. The first electrode may be provided in a plurality of line shapes, for example. In addition, the second electrode may be provided, for example, in the shape of a plurality of lines. The first electrode may be disposed between a plurality of adjacent second electrodes. The second electrode may be disposed between a plurality of adjacent first electrodes.

When the first electrode and the second electrode have different polarities, different numbers of electrodes may be disposed. For example, when the first electrode is an n electrode and the second electrode is a p electrode, the number of the second electrodes may be greater than that of the first electrode. When the electrical conductivity and/or resistance of the second conductivity type semiconductor layer 1113 and the first conductivity type semiconductor layer 1111 are different from each other, the light emitting structure 1110 is formed by the first electrode and the second electrode. It is possible to balance the electrons and holes injected into the light emitting device, and thus the optical properties of the light emitting device may be improved.

The first electrode and the second electrode may be formed in a single-layer or multi-layer structure. For example, the first electrode and the second electrode may be ohmic electrodes. For example, the first electrode and the second electrode are ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al , Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf may be at least one or an alloy of two or more of these materials.

The light emitting device 1100 according to the embodiment may include a protective layer on the surface. The protective layer may include a plurality of third openings exposing the second electrode, and may be disposed to correspond to a plurality of branch electrodes provided on the second electrode. The third opening may be a branch electrode according to an embodiment, and the region covered with the passivation layer may be a non-contact region.

The protective layer may include a plurality of fourth openings exposing the first electrode. The plurality of fourth openings may be disposed to correspond to the plurality of branch electrodes provided on the first electrode. The protective layer may be disposed on the insulating layer. For example, the protective layer may be provided with an insulating material. For example, the protective layer is Si _x O _y , SiO _x N _y , It may be formed of at least one material selected from the group including Si _x N _y and Al _x O _y .

The light emitting device 1100 according to the embodiment has a first bonding pad 1172 and a second bonding pad 1171 disposed on the protective layer, as shown in FIGS. 29 and 31 (a) (b). may include The first bonding pad 1172 may be disposed on the first insulating layer. Also, the second bonding pad 1171 may be disposed on the second insulating layer. The first bonding pad 1172 may be in contact with the upper surface of the first electrode through the plurality of fourth openings provided in the passivation layer in the plurality of branch electrodes. The plurality of branch regions may be vertically shifted from the second opening. When the plurality of branch electrodes and the second opening are vertically shifted from each other, the current injected into the first bonding pad 1172 may be evenly spread in the horizontal direction of the first electrode, and thus, in the plurality of branch electrodes Current may be uniformly injected.

Also, the second bonding pad 1171 may contact the upper surface of the second electrode through the plurality of third openings. When the plurality of PB regions and the plurality of first openings do not overlap vertically, the current injected into the second bonding pad 1171 may be evenly spread in the horizontal direction of the second electrode, and thus A current may be uniformly injected in the PB region.

As described above, according to the light emitting device 1100 according to the embodiment, the first bonding pad 1172 and the first electrode may contact each other in the plurality of fourth opening regions. Also, the second bonding pad 1171 and the second electrode may contact each other in a plurality of regions. Accordingly, according to the embodiment, since power can be supplied through a plurality of regions, there is an advantage that a current dispersion effect is generated and an operating voltage can be reduced according to an increase in the contact area and dispersion of the branch electrodes.

In addition, according to the light emitting device 1100 according to the embodiment, as shown in FIG. 31 , the first insulating layer is disposed under the first electrode, and the second insulating layer is disposed under the second electrode. do. Accordingly, the first insulating layer and the second insulating layer reflect light emitted from the active layer 1112 of the light emitting structure 1110 to minimize light absorption at the first electrode and the second electrode, thereby reducing the luminous intensity. (Po) can be improved. For example, the first insulating layer and the second insulating layer may be made of an insulating material, and a material having a high reflectivity, for example, a DBR structure, may be formed in order to reflect light emitted from the active layer 1112 .

The first insulating layer and the second insulating layer may form a DBR structure in which materials having different refractive indices are repeatedly disposed. For example, the first insulating layer and the second insulating layer may be disposed in a single-layer or multilayer structure including at least one of TiO ₂ , SiO ₂ , Ta ₂ O ₅ , and HfO ₂ .

In addition, according to another embodiment, without being limited thereto, the first insulating layer and the second insulating layer reflect the light emitted from the active layer 1112 according to the wavelength of the light emitted from the active layer 1112 . can be freely selected to adjust

Also, according to another embodiment, the first insulating layer and the second insulating layer may be provided as an ODR layer. According to another embodiment, the first insulating layer and the second insulating layer may be provided in a hybrid form in which a DBR layer and an ODR layer are stacked.

When the light emitting device according to the embodiment is mounted in a flip-chip bonding method and implemented as a light emitting device package, the light provided from the light emitting structure 1110 may be emitted through the substrate 1105 . Light emitted from the light emitting structure 1110 may be reflected from the first insulating layer and the second insulating layer to be emitted toward the light-transmitting substrate 1105 .

In addition, light emitted from the light emitting structure 1110 may also be emitted in a lateral direction of the light emitting structure 1110 . In addition, the light emitted from the light emitting structure 1110 may emit light between the first bonding pad 1172 and the second bonding pad 1172 among the surfaces on which the first bonding pad 1172 and the second bonding pad 1171 are disposed. The pad 1171 may be discharged to the outside through an area where the pad 1171 is not provided.

Accordingly, the light emitting device 1100 according to the embodiment can emit light in six directions surrounding the light emitting structure 1110, and the luminous intensity can be remarkably improved.

On the other hand, according to the light emitting device according to the embodiment, when viewed from the upper direction of the light emitting device 1100, the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is the first bonding The pad 1171 and the second bonding pad 1171 may be provided equal to or smaller than 60% of the total area of the upper surface of the light emitting device 1100 on which the second bonding pad 1171 is disposed. The first bonding pad 1171 is the first bonding pad 1172 .

For example, the total area of the upper surface of the light emitting device 1100 may correspond to an area defined by the horizontal length and vertical length of the lower surface of the first conductivity-type semiconductor layer 1111 of the light emitting structure 1110 . . Also, the total area of the upper surface of the light emitting device 1100 may correspond to the area of the upper surface or the lower surface of the substrate 1105 .

In this way, by providing the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 equal to or smaller than 60% of the total area of the light emitting device 1100, the first bonding The amount of light emitted to the surface on which the pad 1172 and the second bonding pad 1171 are disposed can be increased. Accordingly, according to the embodiment, since the amount of light emitted in the direction of six surfaces of the light emitting device 1100 is increased, the light extraction efficiency is improved and the luminous intensity (Po) can be increased. The first bonding pad 1172 and the second bonding pad 1171 have the same area ratio, or the area of the first bonding pad 1172 is less than 1% of the area of the second bonding pad 1171, for example, 1 to 1 It can be as small as 40%. The first bonding pad 1172 may be spaced apart from the side of the chip by a predetermined distance (W).

The first bonding pad 1172 may include a first concave portion (non-contact region in FIG. 9 ) concave in a first direction, and the second bonding pad 1171 may include a first concave portion concave in the first direction. A second concave portion (non-contact region in FIG. 9 ) concave in the opposite direction may be provided. The first concave portion and the second concave portion may be disposed so as not to overlap in the first direction.

In addition, when viewed from the upper direction of the light emitting device, the sum of the area of the first bonding pad 1172 and the area of the second bonding pad 1171 is 30% of the total area of the light emitting device 1100 . The same or greater may be provided. In this way, the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is provided to be equal to or larger than 30% of the total area of the light emitting device 1100, so that the first bonding pad 1172 is provided. Stable mounting can be performed through the pad 1172 and the second bonding pad 1171 , and electrical characteristics of the light emitting device 1100 can be secured.

In the light emitting device 1100 according to the embodiment, the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is the light emitting device 1100 in consideration of securing light extraction efficiency and bonding stability. ) of 30% or more of the total area and may be selected as 60% or less.

That is, when the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is 30% or more to 100% or less of the total area of the light emitting device 1100, the Stable mounting can be performed by securing electrical characteristics and securing bonding force to be mounted on the light emitting device package.

In addition, when the sum of the areas of the first bonding pad 1172 and the second bonding pad 1171 is greater than 0% to 60% or less of the total area of the light emitting device 1100, the first bonding pad 1172 ) and the amount of light emitted to the surface on which the second bonding pad 1171 is disposed increases, so that the light extraction efficiency of the light emitting device 1100 may be improved, and the luminous intensity Po may be increased.

In the embodiment, the area of the first bonding pad 1172 and the second bonding pad 1171 is to secure the electrical characteristics of the light emitting device 1100 and the bonding force to be mounted on the light emitting device package, and to increase the luminous intensity. A sum of 30% or more to 60% or less of the total area of the light emitting device 1100 was selected.

When the area of the third insulating layer () is 10% or more of the entire upper surface of the light emitting device 1100, it is possible to prevent discoloration or cracks in the package body disposed under the light emitting device 1100, 25% In the following case, it is advantageous to secure light extraction efficiency to emit light on six surfaces of the light emitting device.

For example, the area of the first insulating layer may be large enough to completely cover the area of the first bonding pad 1172 . In consideration of the process error, the length of one side of the first insulating layer may be, for example, 4 micrometers to 10 micrometers greater than the length of one side of the first bonding pad 1172 . For example, the area of the second insulating layer may be large enough to completely cover the area of the second bonding pad 1171 . In consideration of the process error, the length of one side of the second insulating layer may be, for example, 4 micrometers to 10 micrometers greater than the length of one side of the second bonding pad 1171 .

According to an embodiment, the light emitted from the light emitting structure 1110 is not incident on the first bonding pad 1172 and the second bonding pad 1171 by the first insulating layer and the second insulating layer. and can be reflected. Accordingly, according to the embodiment, it is possible to minimize loss of light generated and emitted from the light emitting structure 1110 by being incident on the first bonding pad 1172 and the second bonding pad 1171 .

According to the light emitting device 1100 according to the embodiment, since the third insulating layer ( ) is disposed between the first bonding pad 1172 and the second bonding pad 1171 , the first bonding pad 1172 . and the amount of light emitted between the second bonding pad 1171 and the second bonding pad 1171 can be adjusted.

As described above, the light emitting device 1100 according to the embodiment may be mounted by, for example, a flip chip bonding method and provided in the form of a light emitting device package. At this time, when the package body on which the light emitting device 1100 is mounted is provided with resin or the like, the package body is discolored by strong light of a short wavelength emitted from the light emitting device 1100 in the lower region of the light emitting device 1100 . or cracks may occur.

According to the light emitting device 1100 according to the embodiment, a plurality of contact holes C31, C32, and C33 may be provided in the ohmic contact layer. The second conductivity-type semiconductor layer 1113 and the insulating layer ( ) may be adhered to each other through a plurality of contact holes C31 , C32 , and C33 provided in the ohmic contact layer. Since the insulating layer ( ) can be in direct contact with the second conductivity-type semiconductor layer 1113 , adhesive strength can be improved compared to that of the insulating layer ( ) in contact with the ohmic contact layer.

When the insulating layer ( ) is in direct contact with only the ohmic contact layer, the bonding force or adhesion between the insulating layer ( ) and the ohmic contact layer may be weakened. For example, when the insulating layer and the metal layer are combined, the bonding force or adhesive force between the materials may be weakened.

For example, when the bonding or adhesive strength between the insulating layer ( ) and the ohmic contact layer is weak, peeling may occur between the two layers. As such, when peeling occurs between the insulating layer ( ) and the ohmic contact layer, the characteristics of the light emitting device 1100 may be deteriorated, and reliability of the light emitting device 1100 may not be secured.

The ohmic contact layer may include a first region R11 , a second region R12 , and a third region R13 . The first region R11 and the second region R12 may be spaced apart from each other. Also, the third region R13 may be disposed between the first region R11 and the second region R12 .

The first region R11 may include a plurality of openings provided in a region corresponding to the mesa opening of the light emitting structure 1110 . Also, the first region R11 may include a plurality of first contact holes C31 . For example, a plurality of the first contact holes C31 may be provided around the opening.

The second region R12 may include a plurality of openings provided in a region corresponding to the mesa opening of the light emitting structure 1110 . Also, the second region R12 may include a plurality of second contact holes C32 . For example, a plurality of the second contact holes C32 may be provided around the opening.

The third region R13 may include a plurality of openings provided in a region corresponding to the mesa opening of the light emitting structure 1110 . Also, the first region R11 may include a plurality of first contact holes C31 . For example, a plurality of the first contact holes C31 may be provided around the opening. According to an embodiment, the first contact hole C31 , the second contact hole C32 , and the third contact hole C33 may have, for example, a diameter of 7 micrometers to 20 micrometers. The first contact hole C31 , the second contact hole C32 , and the third contact hole C33 may be provided not only in a circular shape but also in various shapes such as an ellipse or a polygon.

According to an embodiment, the second conductivity type semiconductor layer 1113 is disposed under the ohmic contact layer by the first contact hole C31 , the second contact hole C32 , and the third contact hole C33 . ) may be exposed.

As described above, according to the light emitting device 1100 according to the embodiment, the first bonding pad 1172 and the first electrode may contact each other in a plurality of regions. Also, the second bonding pad 1171 and the second electrode may contact each other in a plurality of regions. Accordingly, according to the embodiment, since power can be supplied through a plurality of regions, there is an advantage that a current dispersion effect occurs and an operating voltage can be reduced according to an increase in the contact area and dispersion of the contact region.

As described above, according to the light emitting device package according to the embodiment, at least one or all of the electrodes of the light emitting device according to the embodiment may correspond to the opening of the body, and at least among the electrodes corresponding to the opening One is a region that is in contact with the conductive layer and a region that is not in contact with the conductive layer, and may correspond to the opening. Accordingly, the electrode of the balgo ㅘ ㅇ device may receive driving power through the frame and/or the conductive layer. Since the contact area between the conductive layer and the electrode is provided in an area smaller than the upper surface area of the opening, the adhesive force between the conductive layer and the electrode can be relaxed, thereby preventing interfacial separation between the electrode and the semiconductor layer. .

Also, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than that of a general bonding material. Therefore, since the light emitting device package according to the embodiment does not cause a re-melting phenomenon even when bonding to the main board or the like through a reflow process, the electrical connection and physical bonding force are not deteriorated. there is.

In addition, according to the light emitting device package according to the embodiment, there is no need to expose the package body 110 to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature.

As described above, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first bonding pad and the second bonding pad of the light emitting device according to the embodiment provide driving power through the conductive layer disposed in the opening. can be provided. In addition, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than that of a general bonding material.

Therefore, since the light emitting device package according to the embodiment does not cause a re-melting phenomenon even when bonding to the main board or the like through a reflow process, the electrical connection and physical bonding force are not deteriorated. there is.

In addition, according to the light emitting device package according to the embodiment, there is no need to expose the package body 110 to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature. Accordingly, the selection range for materials constituting the body can be widened. According to an embodiment, the body may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material.

Meanwhile, the light emitting device package according to the embodiment may be applied to a light source device.

In addition, the light source device may include a display device, a lighting device, a head lamp, etc. according to an industrial field.

As an example of the light source device, the display device includes a bottom cover, a reflecting plate disposed on the bottom cover, a light emitting module that emits light and includes a light emitting element, and is disposed in front of the reflecting plate and guides light emitted from the light emitting module to the front A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel; It may include a color filter disposed in front. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. Also, the display device may have a structure in which light emitting devices emitting red, green, and blue light are respectively disposed without including a color filter.

As another example of the light source device, the head lamp is a light emitting module including a light emitting device package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, and is reflected by the reflector It may include a lens that refracts light forward, and a shade that blocks or reflects a portion of light reflected by the reflector and directed to the lens to form a light distribution pattern desired by a designer.

A lighting device, which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply unit, an inner case, and a socket. Also, the light source device according to the embodiment may further include any one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by a person skilled in the art to which the embodiments belong. Therefore, the contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiment.

In the above, the embodiment has been mainly described, but this is only an example and not a limitation on the embodiment, and those of ordinary skill in the art to which the embodiment belongs may find several not illustrated above within the range that does not deviate from the essential characteristics of the embodiment. It can be seen that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And the differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

110: package body
111: first frame
112: second frame
113: body
120: light emitting device
121: first bonding pad
122: second bonding pad
123: light emitting unit
130: adhesive
135: resin part
140: molding unit
310: circuit board
311: first pad
312: second pad
321: first conductive layer
322: second conductive layer
R: recess
TH1: first opening
TH2: second opening

Claims (10)

a first frame having a first opening;
a second frame having a second opening;
a body disposed between the first frame and the second frame;
a light emitting device including a first bonding pad and a second bonding pad;
a first conductive layer disposed in the first opening; and
a second conductive layer disposed in the second opening;
The first opening passes through the upper surface and the lower surface of the first frame,
The second opening passes through the upper and lower surfaces of the second frame,
The first bonding pad includes a first contact region in contact with the first conductive layer and at least one first non-contact region not in physical contact with the first conductive layer on the first opening. According to claim 1,
The plurality of first contact regions are connected to each other by a first connection part. According to claim 1,
The second bonding pad may include a second contact region in contact with the second conductive layer and a second non-contact region not in physical contact with the second conductive layer on the second opening. 4. The method of claim 3,
The protective layer is a light emitting device package disposed around the first bonding pad and the second bonding pad. According to claim 1,
the first contact area surrounds the first non-contact area;
An area of the first contact region is larger than an area of the first non-contact region. According to claim 1,
the first contact area comprises an inner contact area and an outer contact area;
The first non-contact area is a light emitting device package disposed between the inner contact area and the outer contact area. According to claim 1,
The plurality of first contact areas are disposed at corners of a polygonal shape,
The at least one first non-contact area is a light emitting device package disposed between the plurality of first contact areas. According to claim 1,
a plurality of said first contact areas are arranged in a matrix;
the at least one first non-contact area is disposed between a plurality of the first contact areas;
The plurality of first contact regions is a light emitting device package disposed to surround at least three sides of the first non-contact region. 4. The method of claim 3,
An area of the first contact region or the second contact region is at least twice an area of particles constituting the first conductive layer or the second conductive layer. 4. The method of claim 3,
The area of the first non-contact region and the second non-contact region is at least 1.5 times the area of particles constituting the first conductive layer or the second conductive layer.

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