CN202384394U - Heat-dissipation ceramic substrate capable of improving light-emitting diode (LED) luminous efficiency - Google Patents
Heat-dissipation ceramic substrate capable of improving light-emitting diode (LED) luminous efficiency Download PDFInfo
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- CN202384394U CN202384394U CN2011205644399U CN201120564439U CN202384394U CN 202384394 U CN202384394 U CN 202384394U CN 2011205644399 U CN2011205644399 U CN 2011205644399U CN 201120564439 U CN201120564439 U CN 201120564439U CN 202384394 U CN202384394 U CN 202384394U
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Abstract
The utility model discloses a heat-dissipation ceramic substrate capable of improving light-emitting diode (LED) luminous efficiency, which comprises a ceramic embryo body and a ceramic reflecting ring. A heat conduction column is arranged on the ceramic embryo body, one end of the heat conduction column is combined with a heat conduction metal layer, and heat is dissipated into the air through the heat conduction metal layer, thereby remarkably improving the heat-dissipation effect of the ceramic substrate. In addition, the ceramic reflecting ring is provided with a cone-shaped or arc-shaped metal layer reflecting surface, light absorption of the reflecting surface of the reflecting ring can be reduced, the proportion of lumen emitted by a chip is improved, and accordingly the luminance and luminous efficiency of the LED chip are improved. Therefore, the heat-dissipation ceramic substrate capable of improving the LED luminous efficiency can be widely applied to automobile illumination, traffic lights, display backlight, indoor and outdoor illumination and the like.
Description
Technical field
The present invention relates to a kind of heat radiation ceramic substrate of the LED of raising light efficiency, be specifically related to a kind ofly both can improve the LED light efficiency, can improve the ceramic substrate of heat dispersion again.This product can be widely used in fields such as automotive lighting, traffic lights, display backlight, indoor and outdoor lighting.
Background technology
Global energy shortage and environmental issue have become the strategic problem that influences future world economy and social development, receive national governments, scientific and technological circle and enterpriser's very big concern and great attention.Light-emitting diode (light emitting diode) LED product has that energy-saving and environmental protection, life-span are long, start-up time weak point, sound construction, volume advantage such as little, efficient; Be widely used in fields such as demonstration, illumination, become the advanced technology that leads following illumination.Analyzing according to Displaybank, will grow up with annual 19% growth rate fast in global LED market, along with the demand of LED is urgent day by day, how solves the high-capacity LED heat dissipation problem and improves forward position and the focus that luminous efficiency has become semiconducter research.
And lumination of light emitting diode spectrum or light characteristic; Mainly be to determine by constituting the light-emitting diode chip for backlight unit compound semiconductor; It is very big that the characteristic of light such as luminous efficiency, luminosity or field-of-view angle is influenced by the encapsulating structure of light-emitting diode chip for backlight unit then, determining the characteristics such as light, heat, life-span and secondary light-distribution of led chip.In the LED encapsulation is made; The principal element that influences light efficiency is die size, distribution of electrodes and position, solid crystal type, fluorescent material, substrate etc.; Wherein substrate is one of key factor that influences the LED light efficiency; Especially the reflectivity of the radiating effect of substrate and tore of reflection all will directly influence the light efficiency of LED.If the substrate radiating effect is not good, then can influences the spectrum that led chip, fluorescent material excite, thereby influence the light efficiency of LED bright dipping.The treatment process that different board structures is different with employing; And the roughness on tore of reflection surface, smoothness, tore of reflection coating thickness and quality quality; The capital influences tore of reflection to the light reflecting effect, forms different reflectivity, thereby influences the light efficiency of LED bright dipping.
At present in order to improve the LED radiating effect, generally adopt low-temperature co-fired ceramic substrate (Low-temperature Co-fired Ceramic, LTCC) as the LED heat-radiating substrate, there are following problem in existing LTCC ceramic substrate design, technology:
(1) design problem of ceramic substrate structure.The design of vertical-type tore of reflection, its opening angle limits the ray cast scope sent of led chip, so the light that led chip sends only externally throws the problem that causes led chip ray cast scope to increase with vertical direction.
(2) the production method problem that adopts.Mainly contain boring processing method, pressing and pressing method etc. at present.Above-mentioned processing mode cost is high, and the tore of reflection inclined-plane of processing is coarse, unfavorable light reflection, and reflecting effect is relatively poor, causes a lot of light to be absorbed in the echo area, can't reflex to exiting surface effectively, thereby causes the luminous efficiency after the final packaging on the low side.
In order to overcome the problems referred to above, this patent reduces the reflector degree of depth on the one hand through the structure of more rational design optimization tore of reflection, reduces the propagation distance of light in tore of reflection, reduces the absorption to light; Through adjustment tore of reflection end face or bottom surface radius of circle, increase the subtended angle of tore of reflection on the other hand, to reduce light, reduce the ratio of light generation total reflection, thereby improved the luminous efficiency of led chip through arriving the angle of tore of reflection end face behind the tore of reflection.Adopt comparatively advanced technology simultaneously; The mode that reflector is taked to electroplate reduces the roughness on tore of reflection inclined-plane; Improve the smoothness of tore of reflection reflecting surface; Reduce of the absorption of tore of reflection reflecting surface, reduce light in the back reflective ring is propagated in tore of reflection end face generation total reflection and the loss that causes, thereby improve reflecting effect light.Above approach can extract the light that chip sends efficiently to be derived outside the LED body, improves the logical ratio of light that chip penetrates, and reduces light and absorbs, and improves the luminous efficiency of LED finished product.This technology not only can solve the heat dissipation problem of high-capacity LED effectively, improves the luminous efficiency of LED significantly, and the more traditional LTCC ceramic substrate of its overall performance is more superior.This design and craft cost is lower, and the effect that improves luminous efficiency is remarkable, is with a wide range of applications.
The utility model content
The objective of the invention is to overcome the defective that existing ceramic substrate structure exists; Solve the deficiency of prior art; A kind of heat radiation ceramic substrate of the LED of raising light efficiency is provided; Improve reflecting effect through appropriate design ceramic substrate tore of reflection structure and employing electroplating technology, both improved ceramic substrate LED radiating effect, improve the light efficiency of LED again.
Another object of the present invention is to adopt the method for radium-shine boring on ceramic idiosome, to get out micropore, and pass through the filling perforation technology of implanted metal; Form the heating column reinforced heat conduction, improve the radiating effect of ceramic substrate, thereby improve the life-span of LED; Reduce the light decay of LED, improve the light efficiency of LED.
The present invention realizes above-mentioned purpose through following technical scheme.
A kind of heat radiation ceramic substrate that improves the LED light efficiency of the present invention comprises a ceramic idiosome, has at least one pair of first electrode, a pair of second electrode, solid brilliant metal level, heating column and a conductive layer; One ceramic reflecting ring has a metal layer reflection face.
The pottery idiosome can be the ceramic idiosome of an aluminium oxide idiosome, an aluminium nitride idiosome or a low temperature co-fired knot.
The pottery idiosome has at least one pair of first electrode, and chip is through the gold thread and first electrode conduction.First electrode can electrically connect at test phase and external circuit, thereby whether the test led chip is normally luminous.
The pottery idiosome has a pair of second electrode, electrically connects through the conductive layer and first electrode.Second electrode can electrically connect in order to direct and circuit board, thereby makes ceramic substrate become a kind of surface adhesive type (surface mount device, SMD) electronic component.
The present invention pottery idiosome has at least one heating column, be arranged in this pottery idiosome, and an end of this heating column with consolidate brilliant metal level and combine, the other end combines with heat-conducting metal layer.The heat that led chip produces passes to heat-conducting metal layer by solid brilliant metal level, heating column, looses in air rapidly by heat-conducting metal layer again, thus the radiating effect of raising ceramic substrate.
A kind of heat radiation ceramic substrate that improves the LED light efficiency of the present invention, described reflecting surface ring has the reflecting surface of a taper or an arcuation.The angle of radius, the degree of depth, reflecting surface and ceramic idiosome through appropriate design ceramic reflecting ring adopts mechanical punching mode to process.For reaching the purpose that improves the LED light efficiency, reflecting surface is polished back re-plating metal level, improve the smooth smoothness of reflecting surface, reduce the absorption of reflecting surface to light, improve the logical ratio of light that chip penetrates, thereby improve the LED light efficiency.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the utility model is further specified.
A kind of heat radiation ceramic substrate that improves the LED light efficiency of the present invention.
A kind of cut-away view that improves the heat radiation ceramic substrate of LED light efficiency of Fig. 1 the present invention.
A kind of heat radiation ceramic substrate vertical view that improves the LED light efficiency of Fig. 2 the present invention.
A kind of heat radiation ceramic substrate upward view that improves the LED light efficiency of Fig. 3 the present invention.
Symbol description among the figure: 1 ceramic reflecting ring; 2 reflectings surface; 3 first electrodes; 4 ceramic idiosomes; 5 conductive layers; 6 second electrodes; 7 solid brilliant metal levels; The 8LED chip; 9 heating columns; 10 gold threads; 11 heat-conducting metal layers; 12 lens.
Embodiment
Below be the content of the heat radiation ceramic substrate of a kind of LED of raising light efficiency of the present invention, combine accompanying drawing that preferred embodiment of the present invention is described in detail at present.
As shown in Figure 1, a kind of heat radiation ceramic substrate that improves the LED light efficiency of embodiments of the invention, it comprises: a ceramic idiosome 4, and a ceramic reflecting ring 1.Pottery idiosome 4, it can be an aluminium oxide idiosome, an aluminium nitride idiosome or a LTCC idiosome.Because ceramic idiosome 4 has good thermal conductivity, the heat energy that therefore can effectively led chip 8 be produced spreads out of, thus the useful life of improving led chip 8, and the luminous efficiency that improves LED.
As shown in Figure 1, ceramic idiosome has at least one pair of first electrode, 3, one solid brilliant metal level 7 and conductive layer 5.Gu brilliant metal level 7 is in order to led chip 8 to be set, led chip 8 is through gold thread 10 and 3 conductings of first electrode.First electrode 3 can electrically connect at test phase and external circuit, thereby whether test led chip 8 is normally luminous.Second electrode 6 electrically connects through the conductive layer 5 and first electrode 3.Second electrode 6 can electrically connect in order to direct and circuit board, thereby makes ceramic substrate become a kind of surface adhesive type (surface mount device, SMD) electronic component.
As shown in Figure 1, ceramic reflecting ring 1 has a reflecting surface 2, and reflecting surface 2 is a taper reflecting surface or an arc like reflection face.For luminosity and the light efficiency that improves led chip 8; Reflecting surface 2 electroplated metal layers are handled, and the surface of metal plated layer back reflection face 2 is smooth more smooth, reduces the absorption of 2 pairs of light of ceramic reflecting ring 1 reflecting surface; Improve the logical ratio of light that led chip 8 penetrates, thereby improve the LED light efficiency.
As shown in Figure 1, in order to improve the radiating effect of ceramic substrate, can in ceramic idiosome 4, design at least one heating column 9, an end of heating column 9 combines with heat-conducting metal layer 11, and an end combines with solid brilliant metal level 7.The heat that led chip 8 produces passes to heat-conducting metal layer 11 by solid brilliant metal level 7 and heating column 9, promptly rejects heat in the air by heat-conducting metal layer 11 again, thus the heat dispersion of raising ceramic substrate.The area of heat-conducting metal layer is big more, and its radiating effect is good more.
Claims (5)
1. heat radiation ceramic substrate that improves the LED light efficiency is characterized in that comprising: a ceramic idiosome, and it has at least one pair of first electrode, solid brilliant metal level, heating column and a conductive layer; One ceramic reflecting ring has a metal layer reflection face.
2. a kind of heat radiation ceramic substrate that improves the LED light efficiency according to claim 1 is characterized in that wherein said ceramic idiosome is an aluminium oxide idiosome, an aluminium nitride idiosome or a LTCC idiosome.
3. a kind of heat radiation ceramic substrate that improves the LED light efficiency according to claim 1; It is characterized in that wherein said ceramic idiosome has at least one heating column; Be arranged in this pottery idiosome, and an end of this heating column combines with heat-conducting metal layer, an end combines with solid brilliant metal level.
4. according to claim 1 or 3 described a kind of heat radiation ceramic substrates that improve the LED light efficiency, it is characterized in that wherein said ceramic idiosome has a heat-conducting metal layer, and this heat-conducting metal layer is to combine with this heating column one end.
5. a kind of heat radiation ceramic substrate that improves the LED light efficiency according to claim 1 is characterized in that wherein said reflecting surface is the metal layer reflection face of a taper or an arcuation.
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CN2011205644399U CN202384394U (en) | 2011-12-29 | 2011-12-29 | Heat-dissipation ceramic substrate capable of improving light-emitting diode (LED) luminous efficiency |
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CN2011205644399U CN202384394U (en) | 2011-12-29 | 2011-12-29 | Heat-dissipation ceramic substrate capable of improving light-emitting diode (LED) luminous efficiency |
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Cited By (8)
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CN105611724A (en) * | 2015-09-22 | 2016-05-25 | 乐健集团有限公司 | A printed circuit board with a heat dissipation device, a power conductor assembly and a printed circuit board preparing method |
CN106505051A (en) * | 2016-11-22 | 2017-03-15 | 南通沃特光电科技有限公司 | A kind of power device with Graphene |
CN107705713A (en) * | 2017-10-13 | 2018-02-16 | 上海天马微电子有限公司 | A kind of display panel and display device |
CN109148671A (en) * | 2018-08-24 | 2019-01-04 | 江西新正耀光学研究院有限公司 | One kind being suitable for the luminous deep ultraviolet LED package support in side and its production technology |
CN109699115A (en) * | 2017-10-23 | 2019-04-30 | 苏州旭创科技有限公司 | Optical module |
CN110473952A (en) * | 2018-05-09 | 2019-11-19 | 深圳市聚飞光电股份有限公司 | Circuit LED support and LED |
CN110473945A (en) * | 2018-05-09 | 2019-11-19 | 深圳市聚飞光电股份有限公司 | LED support and LED with circuit |
CN111613710A (en) * | 2020-06-29 | 2020-09-01 | 松山湖材料实验室 | Electronic equipment, semiconductor device, packaging structure, support and manufacturing method thereof |
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2011
- 2011-12-29 CN CN2011205644399U patent/CN202384394U/en not_active Expired - Fee Related
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105611724A (en) * | 2015-09-22 | 2016-05-25 | 乐健集团有限公司 | A printed circuit board with a heat dissipation device, a power conductor assembly and a printed circuit board preparing method |
CN105611724B (en) * | 2015-09-22 | 2018-08-10 | 乐健科技(珠海)有限公司 | Printed circuit board, power semiconductor assembly with radiator and printed circuit board preparation method |
CN106505051A (en) * | 2016-11-22 | 2017-03-15 | 南通沃特光电科技有限公司 | A kind of power device with Graphene |
CN106505051B (en) * | 2016-11-22 | 2019-02-05 | 南通壹选工业设计有限公司 | A kind of power device with graphene |
CN107705713A (en) * | 2017-10-13 | 2018-02-16 | 上海天马微电子有限公司 | A kind of display panel and display device |
CN109699115A (en) * | 2017-10-23 | 2019-04-30 | 苏州旭创科技有限公司 | Optical module |
CN110473952A (en) * | 2018-05-09 | 2019-11-19 | 深圳市聚飞光电股份有限公司 | Circuit LED support and LED |
CN110473945A (en) * | 2018-05-09 | 2019-11-19 | 深圳市聚飞光电股份有限公司 | LED support and LED with circuit |
CN109148671A (en) * | 2018-08-24 | 2019-01-04 | 江西新正耀光学研究院有限公司 | One kind being suitable for the luminous deep ultraviolet LED package support in side and its production technology |
CN111613710A (en) * | 2020-06-29 | 2020-09-01 | 松山湖材料实验室 | Electronic equipment, semiconductor device, packaging structure, support and manufacturing method thereof |
CN111613710B (en) * | 2020-06-29 | 2021-08-13 | 松山湖材料实验室 | Electronic equipment, semiconductor device, packaging structure, support and manufacturing method thereof |
US11881548B2 (en) | 2020-06-29 | 2024-01-23 | Songshan Lake Materials Laboratory | Electronic device, semiconductor device, packaging structure, bracket and method of manufacturing the bracket |
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