CN1716646A - Packaging structure of power type LED lighting light source - Google Patents
Packaging structure of power type LED lighting light source Download PDFInfo
- Publication number
- CN1716646A CN1716646A CNA2004100278210A CN200410027821A CN1716646A CN 1716646 A CN1716646 A CN 1716646A CN A2004100278210 A CNA2004100278210 A CN A2004100278210A CN 200410027821 A CN200410027821 A CN 200410027821A CN 1716646 A CN1716646 A CN 1716646A
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- Prior art keywords
- substrate
- pit
- encapsulating structure
- plastic casing
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000004806 packaging method and process Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000004033 plastic Substances 0.000 claims abstract description 25
- 229920003023 plastic Polymers 0.000 claims abstract description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 239000005304 optical glass Substances 0.000 claims abstract description 8
- 238000002360 preparation method Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 14
- 238000005538 encapsulation Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000001746 injection moulding Methods 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 230000004907 flux Effects 0.000 abstract description 6
- 238000012856 packing Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000009422 external insulation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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Abstract
The high power LED light source packing structure with high light flux, high reliability and low heat resistor includes substrate, plastic casing, focusing lens, and LED chip. The substrate is made of metal plate, preferably copper plate, with high heat conductivity, has required shape, and has turned conic notches for fixing LED chips. The plastic casing coats the middle part of the substrate and has stepped holes corresponding to the notches. The focusing lens is adhered to the step and is made with optical plastic or optical glass. In addition, one YAG layer may be coated to the bottom of the focusing lens to alter the color or color temperature of light. The present invention also provides the preparation process of the semiconductor light source with the structure.
Description
Technical field
The present invention relates to semiconductor technology, being specifically related to light emitting diode is a kind of lighting source of main element; The invention still further relates to the encapsulating structure of this lighting source, utilize this structure to prepare the method for lighting source.
Technical background
The light emitting diode of visible light (LED) originates from the nineties in 20th century, it is the expansion of ultra-high brightness LED application, 1991, the practicability of red, orange, yellow AlGaInN class high-brightness LED has been opened the new table of contents of LED development, make the application of LED move towards outdoor from indoor, success be applied to various traffic lights, automobile tail light, indicator and outdoor information display screen.Succeeding in developing in succession of blue, green AlGaInN class ultra-high brightness LED realized panchromaticization of super brightness of LED.Yet being used to throw light on then is the another uncharted field that ultra-high brightness LED is expanded, and replaces the developing goal that traditional glass bulb illuminating lamps such as incandescent lamp and fluorescent lamp have become the new century with LED semiconductor solid light source.
This shows that the research and development of power type semiconductor solid light source and industrialization will become another important directions of Future Development, its key problem in technology is the luminous flux that improves constantly luminous efficiency (lm/W) and each device (assembly).The used epitaxial material of power-type LED adopts growth technology and the multi-quantum pit structure of MOCVD, though its internal quantum efficiency also needs further to improve, the biggest obstacle that obtains high luminous flux is still chip, and to get optical efficiency very low.Because semiconductor differs bigger with the refractive index of encapsulation epoxy, cause the inner cirtical angle of total reflection very little, the light that active layer produces has only fraction to be removed, and major part is absorbed through repeatedly reflecting at chip internal, becomes the ultra-high brightness LED chip and gets the very low basic reason of optical efficiency.
Owing to continued to use traditional indicator light type LED manufacturing process and encapsulating structure, operating current is generally 20mA at present, and its packaging thermal resistance can not satisfy the requirement of abundant heat radiation up to 300 ℃/W, causes the temperature of led chip to raise, and causes the device optical attenuation to accelerate.The epoxy resin flavescence also will make light output reduce in addition.Power-type LED according to this conventional theory design and making can't reach high efficiency and high-throughout requirement at all, thereby can not reach the requirement of lighting source.
Power-type LED produces than the big 10-20 of φ 5mm white light LEDs luminous flux doubly under big electric current, therefore must the encapsulating material of deterioration solves the optical attenuation problem by using effective heat radiation and adopting not, shell and encapsulation have become one of key technology of development power-type LED, and brand-new LED power-type package design theory mainly reduces two classes: the one, and the encapsulation of single-chip power-type; Another is the encapsulation of multicore sheet power-type.
The patent documentation of relevant LED is a lot, and for example JP8-102550 does not early have concrete narration to be used for the encapsulation of lighting source.Same CN1296296 has in addition narrated the LED device that upside-down mounting is welded.CN1215503 and 1315057 discloses LED device and preparation thereof, wherein makes some miniature projections so that reduce electrode size and improve connection on electrode, and they all use resin-encapsulated.JP10-200186 uses the parabola reflective surface, but it is vertical installation.JP2001-156330 is chromium-doped so that at the 550nm place absorption is arranged in Sapphire Substrate, and bullet cut shell snoot is arranged.But above patent does not have one piece of public use copper base to encapsulate, and uses optical glass to encapsulate; Clearly LED is not used for lighting source yet.
Summary of the invention
The object of the present invention is to provide a kind of encapsulating structure with power-type LED lighting source of high luminous flux, high reliability and low thermal resistance.
Another object of the present invention provides a kind of method of utilizing this structure to prepare the semiconductor solid light source.
Lighting source of the present invention comprises substrate 1, plastic casing 2, collector lens 3 and led chip 4.
The material of substrate 1 is the high metal substrate of thermal conductivity, the preferably copper substrate, and its shape can be arbitrary shape, determines as required, is preferably rectangle; There is a back taper pit 11 at the center of substrate 1 upper surface, and the diameter of this pit and the degree of depth determine there is not strict restriction as required; Led chip 4 is fixed on the base plane of this pit 11, and the quantity of led chip can be one or more as required; Substrate 1 upper surface has inner insulating layer 12 from the inside to surface successively, covers copper layer 13, electrode layer 14 and external insulation layer 15, needs to distribute according to circuit.
Plastic casing 2 is wrapped in the middle part of substrate 1, and perforate and form step 21 above pit on the substrate 11, and collector lens 3 is bonded in 21 li on the step on plastic casing 2 tops.
In addition, the present invention also applies one deck YAG layer 7 in the lower surface of collector lens 3 alternatively, changes the color or the colour temperature of light.
The encapsulation preparation method of lighting source of the present invention comprises step:
1. preparation metal substrate, there is a back taper pit at the center of upper surface of base plate, and the diameter of this pit and the degree of depth determine that as required the big I on pit bottom plane is held led chip; And on substrate, forming corresponding circuit and electrode according to the encapsulation needs, the metal substrate circuit board technology is very general known technology at electronic applications, has nothing to do with the application's inventive point, need not to give unnecessary details.
2. the method with injection moulding forms plastic casing in the substrate stage casing;
3. with adhesive led chip is fixed on the plane of the pit bottom of upper surface of base plate;
4. with corresponding electrode on the electrode of spun gold welding led chip and the substrate;
5. the preparation collector lens also places these lens in the step of plastic casing, by adhesive or alternate manner they is fixed.
6. before collector lens was installed, the present invention also applied one deck YAG powder in the lower surface of collector lens alternatively.
The material of metal substrate does not have strict restriction, generally uses copper base, aluminium base or its alloy, and preferably copper substrate wherein, thermal conductivity is higher, helps the heat radiation of led chip.The shape of metal substrate does not have strict restriction yet, in order to be beneficial to encapsulation, preferred rectangle.The back taper pit surface has higher fineness, so that strengthen reflective; Base plane makes things convenient for fixed L ED chip.Circuit on the substrate generally forms with covering the corrosion of copper layer, and electrode is gold-plated; Material of each layer and thickness on the substrate, the arranging of circuit, the quantity of electrode, shape and position can be according to using the needs design.Can pass through the bonding way fixed chip, that preferably uses high thermal conductivity gluingly connects fixingly, can effectively reduce the thermal resistance of structure like this.As required, chip can be one or more.Above structure can be protected and reinforce to the injection-moulded plastic shell, and provide the installation site for collector lens.Because key of the present invention is that low thermal resistance, Stability Analysis of Structures and energy are high temperature resistant, therefore, except that using the gluing of high thermal conductivity to connect the chip, the material of collector lens is got rid of resin, general optical plastic or the optical glass of using, can be according to the material of the power selection lens of led chip, lower-powered (as 1W) uses optical plastic, and what power was bigger (uses optical glass as 3～5W).Their mechanical performance, thermal conductivity, light transmission and resistance to elevated temperatures all are better than resin, and its advantage is self-evident.Apply one deck YAG in the base plane of collector lens alternatively, the chip of the light by sending specific wavelength excites YAG, can obtain the light of different colours.Certainly, different additive changes different color and lusters or other performances.Traditional can influence the radiating effect of chip greatly to the direct mode that is overlying on the chip of dripping of additive, thereby influences the performance of light source.
Description of drawings
Fig. 1 is the profile of metal substrate among the present invention;
Fig. 2 is the stereogram of metal substrate among the present invention;
Fig. 3 is the stereogram of plastic casing among the present invention;
Fig. 4 is the stereogram of the encapsulating structure of power-type LED lighting source of the present invention.
Fig. 5 is the profile of the encapsulating structure of power-type LED lighting source of the present invention.
Fig. 6 is a kind of combined light source schematic diagram of using this practical power-type LED lighting source.
Embodiment
Be described in further detail the present invention with reference to the accompanying drawings in conjunction with the embodiments.
The encapsulating structure of one one kinds of power-type LED lighting sources of embodiment
See also Fig. 1 and Fig. 2, wherein metal substrate 1 is the rectangular copper substrate.The shape with back taper pit 11 is made with die stamping or lathe car in the center of copper base 1 upper surface, and this pit surface has higher fineness, forms a smooth reflecting surface.According to forming corresponding circuit and positive and negative electrode on the encapsulation needs substrate, wherein 141 and 142 are and led chip 4 and the electrode that is connected, and 143 and 144 is the electrodes that are connected with external circuit.Circuit forms by covering the corrosion of copper layer, and it is gold-plated that each organizes electrode surface.Copper base also has two installing holes 161 and 162.
See also Fig. 3, form plastic casing 2 in copper base 1 stage casing, and perforate and form step 21 above pit on the substrate 11, be used for placing and fixing collector lens 3 with the method for injection moulding.Substrate is not all wrapped up by plastic casing, but two ends expose, and favourable to dispelling the heat, the electrode 143 and 144 that is connected with external circuit on the substrate also is exposed.
The glue of led chip 4 usefulness high thermal conductivities directly is fixed on the plane of back taper pit 11 bottoms, and the heat that makes chip 4 produce can spread out of rapidly by copper base 1; The power of led chip is 3W.
Gold-plated electrode 141 on the electrode of led chip 4 and the substrate 1 and 142 is by spun gold 5 welding.
See also Fig. 4 and Fig. 5, the optical glass that size is suitable is fired into collector lens 3; This collector lens 3 is placed plastic casing 2 tops, and embed in the step 21, fix with suitable glue in the junction.
The encapsulating structure of embodiment two another kind of power-type LED lighting sources
Substantially according to the step identical with embodiment one, the power of different is led chip 4 is 1W, and is to be installed on the copper base 1 by 8 chip portfolios; Wherein apply one deck YAG powder 7 in the lower surface of collector lens, the chip of the light by sending specific wavelength excites the YAG powder, to obtain the light of required color.
The encapsulating structure of embodiment three another power-type LED lighting sources
Substantially according to the step identical with embodiment one, the material of different is collector lens 3 is optical plastic PMMA (acryl), the injection moulding manufacturing.
41 kinds of combined light sources of using a plurality of power-type LED lighting sources of the present invention of embodiment
See also Fig. 6, make an aluminium base 8, have square groove on it,, be beneficial to heat and distribute so that the copper base of each power type semiconductor solid light source can be fitted with aluminium base; Be fixed on the aluminium base by the installing hole on the copper base 161,162 by 8 power type semiconductor solid light sources, connect corresponding electrode and circuit then.
The present invention has following advantage:
1) owing to adopt metal substrate, and chip directly is fixed in the bottom of this metal substrate pit with the glue of high thermal conductivity, and the heat that chip is produced can spread out of rapidly;
2) chip places the back taper pit bottom of metal substrate, and this pit surface is a smooth reflecting surface, and the light that chip is sent reflects upward, can reduce the loss of light, improves and gets optical efficiency;
3) the collector lens material adopts the higher optical glass of thermal conductivity or optical plastic and the non-traditional low optical resin of thermal conductivity, thereby makes the better heat radiation under high-power situation of this power type semiconductor solid light source;
4), can increase the brightness of this power type semiconductor solid light source and improve the directive property of light, and lens material stability is high, is not prone to phenomenons such as aging decay because the setting of lens;
5) apply one deck additive in the base plane of lens, rather than directly drip and be overlying on the chip, can improve the radiating effect of chip.
From the above, the present invention provide a kind of thermal resistance low, reliability height, the power-type LED lighting source encapsulating structure that luminous flux is high, and a kind of method of utilizing this structure to prepare the semiconductor solid light source is provided.More than be described in detail encapsulating structure of the present invention, obviously, those skilled in the art can do many improvement and conversion, and for example variation of Feng Zhuan structure and size and material etc. all falls into spiritual scope of the present invention.
Claims (9)
1. the encapsulating structure of a power-type LED lighting source comprises substrate, plastic casing, collector lens and led chip.
2. according to the described encapsulating structure of claim 1, the material that it is characterized in that substrate is the high metal substrate of thermal conductivity, the preferably copper substrate, and its shape can be arbitrary shape, determines as required, is preferably rectangle.
3. according to the described encapsulating structure of claim 1, there is a back taper pit at the center that it is characterized in that upper surface of base plate, the diameter of this pit and the degree of depth are determined as required, there is not strict restriction, led chip is fixed on the base plane of this pit, and the quantity of led chip can be one or more as required.
4. according to the described encapsulating structure of claim 1, it is characterized in that plastic casing is wrapped in the middle part of substrate, and perforate and form step above pit on the substrate, collector lens is bonded in the step on plastic casing top.
5. according to the described encapsulating structure of claim 1, it is characterized in that substrate is not all wrapped up by plastic casing, but two ends are exposed.
6. according to the described encapsulating structure of claim 1, it is characterized in that the collector lens material uses optical plastic or optical glass.
7. according to the described encapsulating structure of claim 1, the base plane that further is included in collector lens applies one deck and changes the color of light or the YAG layer of colour temperature.
8. the encapsulation preparation method of a power-type LED lighting source comprises step:
The preparation metal substrate, there is a back taper pit at the center of upper surface of base plate, and the diameter of this pit and the degree of depth determine that as required the big I on pit bottom plane is held led chip, and form corresponding circuit and electrode according to the encapsulation needs on substrate;
Method with injection moulding forms plastic casing in the substrate stage casing;
Led chip is fixed on the plane of the pit bottom of upper surface of base plate with adhesive;
With corresponding electrode on the electrode of spun gold welding led chip and the substrate;
The preparation collector lens also places these lens in the step of plastic casing, by adhesive or alternate manner they is fixed.
9. method according to Claim 8, the lower surface that further is included in collector lens applies one deck YAG powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100278210A CN100341161C (en) | 2004-06-30 | 2004-06-30 | Packaging structure of power type LED lighting light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100278210A CN100341161C (en) | 2004-06-30 | 2004-06-30 | Packaging structure of power type LED lighting light source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1716646A true CN1716646A (en) | 2006-01-04 |
| CN100341161C CN100341161C (en) | 2007-10-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100278210A Expired - Fee Related CN100341161C (en) | 2004-06-30 | 2004-06-30 | Packaging structure of power type LED lighting light source |
Country Status (1)
| Country | Link |
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| CN (1) | CN100341161C (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100583473C (en) * | 2007-07-27 | 2010-01-20 | 李氏工业有限公司 | Method for encapsulating LED wafer |
| CN101452977B (en) * | 2007-12-05 | 2010-06-02 | 亿光电子工业股份有限公司 | Light emitting construction and LED chip fixture apparatus |
| US7745840B2 (en) | 2007-11-29 | 2010-06-29 | Foxsemicon Integrated Technology, Inc. | Solide-state light source |
| CN1945803B (en) * | 2006-10-27 | 2010-08-18 | 杭州中宙光电有限公司 | Packaging method for high power LED expansion light source device |
| CN101345278B (en) * | 2007-07-13 | 2011-01-12 | 陈金汉 | LED chip encapsulation |
| CN102130110A (en) * | 2010-12-24 | 2011-07-20 | 哈尔滨工业大学 | Multi-chipset high-power LED encapsulation structure |
| US8067781B2 (en) | 2007-11-22 | 2011-11-29 | Everlight Electronics Co., Ltd. | Light emitting structure and securing device thereof |
| CN102376844A (en) * | 2010-08-16 | 2012-03-14 | 展晶科技(深圳)有限公司 | Light emitting diode package structure and manufacturing method thereof |
| CN102478170A (en) * | 2011-07-27 | 2012-05-30 | 深圳市日上光电有限公司 | Full-plastic-packaged light emitting diode (LED) module |
| CN102832298A (en) * | 2011-06-17 | 2012-12-19 | 弘凯光电股份有限公司 | Manufacturing method of light emitting diode packaging structure |
| CN105371170A (en) * | 2015-11-23 | 2016-03-02 | 安徽恒利机电科技有限公司 | Assembly technique for LED mining lamp base |
| WO2018121103A1 (en) * | 2016-12-30 | 2018-07-05 | 江苏稳润光电有限公司 | Ultraviolet led packaging method |
| CN109411587A (en) * | 2018-12-10 | 2019-03-01 | 邱凡 | A kind of purple LED production method and its purple LED containing silica-gel lens |
| CN110786817A (en) * | 2019-11-13 | 2020-02-14 | 山西医科大学 | Two-waveband optical molecular image light source device based on LED efficient refrigeration |
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| CN102544337B (en) * | 2011-08-24 | 2015-03-04 | 福建省两岸照明节能科技有限公司 | Encapsulation structure for improving luminous efficiency of light-emitting diode (LED) chip through utilizing concave lens-shaped transparent yttrium aluminum garnet (YAG) ceramics or crystals |
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| US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
| TW488085B (en) * | 1999-11-26 | 2002-05-21 | High Elevation Corp | Manufacturing method of arc and flat-bottomed concave-cup LED |
| JP2004095609A (en) * | 2002-08-29 | 2004-03-25 | Matsushita Electric Ind Co Ltd | Packaged varistor |
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2004
- 2004-06-30 CN CNB2004100278210A patent/CN100341161C/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945803B (en) * | 2006-10-27 | 2010-08-18 | 杭州中宙光电有限公司 | Packaging method for high power LED expansion light source device |
| CN101345278B (en) * | 2007-07-13 | 2011-01-12 | 陈金汉 | LED chip encapsulation |
| CN100583473C (en) * | 2007-07-27 | 2010-01-20 | 李氏工业有限公司 | Method for encapsulating LED wafer |
| US8067781B2 (en) | 2007-11-22 | 2011-11-29 | Everlight Electronics Co., Ltd. | Light emitting structure and securing device thereof |
| US7745840B2 (en) | 2007-11-29 | 2010-06-29 | Foxsemicon Integrated Technology, Inc. | Solide-state light source |
| CN101452977B (en) * | 2007-12-05 | 2010-06-02 | 亿光电子工业股份有限公司 | Light emitting construction and LED chip fixture apparatus |
| CN102376844A (en) * | 2010-08-16 | 2012-03-14 | 展晶科技(深圳)有限公司 | Light emitting diode package structure and manufacturing method thereof |
| CN102130110A (en) * | 2010-12-24 | 2011-07-20 | 哈尔滨工业大学 | Multi-chipset high-power LED encapsulation structure |
| CN102832298A (en) * | 2011-06-17 | 2012-12-19 | 弘凯光电股份有限公司 | Manufacturing method of light emitting diode packaging structure |
| CN102478170A (en) * | 2011-07-27 | 2012-05-30 | 深圳市日上光电有限公司 | Full-plastic-packaged light emitting diode (LED) module |
| CN102478170B (en) * | 2011-07-27 | 2014-12-17 | 深圳市日上光电股份有限公司 | Full-plastic-packaged light emitting diode (LED) module |
| CN105371170A (en) * | 2015-11-23 | 2016-03-02 | 安徽恒利机电科技有限公司 | Assembly technique for LED mining lamp base |
| WO2018121103A1 (en) * | 2016-12-30 | 2018-07-05 | 江苏稳润光电有限公司 | Ultraviolet led packaging method |
| CN109411587A (en) * | 2018-12-10 | 2019-03-01 | 邱凡 | A kind of purple LED production method and its purple LED containing silica-gel lens |
| CN109411587B (en) * | 2018-12-10 | 2020-11-27 | 浙江单色电子科技有限公司 | Production method of purple light LED containing silica gel lens and purple light LED |
| CN110786817A (en) * | 2019-11-13 | 2020-02-14 | 山西医科大学 | Two-waveband optical molecular image light source device based on LED efficient refrigeration |
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| CN100341161C (en) | 2007-10-03 |
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Owner name: CHANGZHI HUAGUANG LIGHTING CO., LTD. Free format text: FORMER OWNER: CHANGZHI HI-TECH. INDUSTRY INVESTMENT CO., LTD. Effective date: 20140825 |
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