WO2018121103A1 - Ultraviolet led packaging method - Google Patents
Ultraviolet led packaging method Download PDFInfo
- Publication number
- WO2018121103A1 WO2018121103A1 PCT/CN2017/110634 CN2017110634W WO2018121103A1 WO 2018121103 A1 WO2018121103 A1 WO 2018121103A1 CN 2017110634 W CN2017110634 W CN 2017110634W WO 2018121103 A1 WO2018121103 A1 WO 2018121103A1
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- WO
- WIPO (PCT)
- Prior art keywords
- ultraviolet led
- parts
- packaging method
- quartz lens
- adhesive
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 29
- 239000000853 adhesive Substances 0.000 claims abstract description 29
- 230000001070 adhesive effect Effects 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000010453 quartz Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000005476 soldering Methods 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 239000003822 epoxy resin Substances 0.000 claims description 16
- 229920000647 polyepoxide Polymers 0.000 claims description 16
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 229910052918 calcium silicate Inorganic materials 0.000 claims description 10
- 239000000378 calcium silicate Substances 0.000 claims description 10
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 claims description 10
- 239000000835 fiber Substances 0.000 claims description 10
- RZVINYQDSSQUKO-UHFFFAOYSA-N 2-phenoxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC1=CC=CC=C1 RZVINYQDSSQUKO-UHFFFAOYSA-N 0.000 claims description 9
- 239000011230 binding agent Substances 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 239000004841 bisphenol A epoxy resin Substances 0.000 claims description 7
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 6
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 239000011265 semifinished product Substances 0.000 claims description 6
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 6
- 239000012279 sodium borohydride Substances 0.000 claims description 6
- BOXSVZNGTQTENJ-UHFFFAOYSA-L zinc dibutyldithiocarbamate Chemical compound [Zn+2].CCCCN(C([S-])=S)CCCC.CCCCN(C([S-])=S)CCCC BOXSVZNGTQTENJ-UHFFFAOYSA-L 0.000 claims description 5
- MZRQZJOUYWKDNH-UHFFFAOYSA-N diphenylphosphoryl-(2,3,4-trimethylphenyl)methanone Chemical compound CC1=C(C)C(C)=CC=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 MZRQZJOUYWKDNH-UHFFFAOYSA-N 0.000 claims description 4
- 239000000047 product Substances 0.000 claims description 4
- 230000004224 protection Effects 0.000 claims description 4
- CRBJBYGJVIBWIY-UHFFFAOYSA-N 2-isopropylphenol Chemical compound CC(C)C1=CC=CC=C1O CRBJBYGJVIBWIY-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- -1 hydroxyisopropyl benzene peroxide Chemical class 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- XVKKIGYVKWTOKG-UHFFFAOYSA-N diphenylphosphoryl(phenyl)methanone Chemical compound C=1C=CC=CC=1P(=O)(C=1C=CC=CC=1)C(=O)C1=CC=CC=C1 XVKKIGYVKWTOKG-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 230000032683 aging Effects 0.000 abstract description 11
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- SLMZOFAGPBXVCB-UHFFFAOYSA-N 2-hydroxypropan-2-yl benzoate Chemical compound CC(C)(O)OC(=O)C1=CC=CC=C1 SLMZOFAGPBXVCB-UHFFFAOYSA-N 0.000 description 1
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 1
- ZYUVGYBAPZYKSA-UHFFFAOYSA-N 5-(3-hydroxybutan-2-yl)-4-methylbenzene-1,3-diol Chemical compound CC(O)C(C)C1=CC(O)=CC(O)=C1C ZYUVGYBAPZYKSA-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- YFPJFKYCVYXDJK-UHFFFAOYSA-N Diphenylphosphine oxide Chemical compound C=1C=CC=CC=1[P+](=O)C1=CC=CC=C1 YFPJFKYCVYXDJK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- NHADDZMCASKINP-HTRCEHHLSA-N decarboxydihydrocitrinin Natural products C1=C(O)C(C)=C2[C@H](C)[C@@H](C)OCC2=C1O NHADDZMCASKINP-HTRCEHHLSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SRWMQSFFRFWREA-UHFFFAOYSA-M zinc formate Chemical compound [Zn+2].[O-]C=O SRWMQSFFRFWREA-UHFFFAOYSA-M 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Definitions
- the invention belongs to the field of LED packaging, and in particular relates to an ultraviolet LED packaging method.
- semiconductor lighting As a new generation of lighting technology, semiconductor lighting has many advantages: energy saving, environmental protection, long life, fast response, etc., which has developed very rapidly in recent years.
- Ultraviolet LED has the advantages of small specific product, long life and high efficiency, and has broad application prospects. At present, the luminous power of the ultraviolet LED is relatively low, and in addition to the improvement in the level of chip fabrication, the packaging technology also has an important influence on the characteristics of the LED.
- UV LEDs are mainly available in epoxy and metal and glass lens packages. The former is mainly applied to near-ultraviolet LEDs of around 400 nm, but ultraviolet light has a great influence on the aging of materials. The latter is mainly used for UV LEDs with wavelengths less than 380 nm.
- Packaging materials are another important aspect of LED packaging technology. LED packaging materials mainly include glass lenses, epoxy resins and silicone resins.
- Quartz glass softening point temperature is 1600 ° C
- hot processing temperature is 1700 ⁇ 2000 ° C
- quartz glass is not suitable for sealing LED chips
- epoxy resin high temperature heat resistance, UV resistance, poor light output efficiency Low using organic materials such as silicone or epoxy resin, it will have aging and other aging conditions when exposed to high temperatures.
- the object of the present invention is to provide an ultraviolet LED packaging method for overcoming the above deficiencies of the prior art, which uses a specific adhesive to improve the service life of the LED.
- An ultraviolet LED packaging method includes the following steps:
- Step 1 the ultraviolet LED chip is fixed on the substrate containing the printed circuit layer, the substrate is provided with a continuous boss around the substrate, and the upper surface of the boss is provided with a stepped support surface for placing the quartz lens;
- Step 2 using a gold wire to connect the chip to the substrate electrode
- Step 3 applying an adhesive to the stepped support surface
- Step 4 placing a quartz lens on the stepped support surface, applying an adhesive on the gap between the quartz lens and the stepped support surface to obtain an LED semi-finished product;
- step 5 the LED semi-finished product is bonded and fixed by reflow soldering to obtain a finished LED product.
- the ultraviolet LED chip in the step 1 is vertical.
- the binder in the step 3 is prepared from the following components by weight: 50-60 parts of bisphenol A type epoxy resin, trimethylbenzoyl group- 0.5-1 part of diphenylphosphine oxide, 1-3 parts of polyoxyethylene ether, 2-5 parts of 2-phenoxyethyl acrylate, 0.1-0.3 parts of hydroxyisopropyl benzoate, 2-4 parts of zinc oxide , sodium borohydride 0.3-0.6 parts, 1-2 parts of calcium silicate, 1-2 parts of nano boron fiber, 1-2 parts of zinc dibutyl dithiocarbamate, 1-4 parts of polyborosiloxane.
- zinc oxide and calcium silicate in the adhesive component are both nanometer grade.
- the preparation method of the adhesive is as follows:
- Step one mixing 2-phenoxyethyl acrylate, calcium silicate, nano boron fiber and bisphenol A epoxy resin in the reaction kettle, and then heating to 120-130 ° C under vacuum, maintaining 200 -300 minutes, then adding polyborosiloxane, and maintaining for 30-50 minutes to obtain a modified epoxy resin;
- Step two the polyoxyethylene ether, hydroxy cumene peroxide, zinc oxide, zinc dibutyl dithiocarbamate and the modified epoxy resin are uniformly mixed, and the temperature is raised to 70-80 ° C under the protection of inert gas. After maintaining for 50-60 minutes, trimethylbenzoyl-diphenylphosphine oxide and sodium borohydride are added, and the temperature is raised to 90-95 ° C for 20-30 minutes to obtain a binder.
- the vacuum degree in the first step of the binder preparation method is 0.04-0.06 MPa.
- the quartz lens in step 4 is a solid quartz lens.
- the space around the ultraviolet LED chip is evacuated or filled with gas.
- the adhesive provided by the invention has good ultraviolet aging resistance and heat resistance, and the luminous power attenuation rate is less than 0.3% after the LED is operated for 100 hours, and the attenuation rate is 2.3% or less after 500 hours of operation, and the common adhesives currently used.
- the decay rate is generally above 5% after 100 hours of operation.
- the modification provided by the present invention for the modification of the bisphenol A type epoxy resin in the preparation step 1 is the key to the stable high temperature and light aging resistance of the adhesive provided by the present invention, and the bisphenol A type is obtained in the first step.
- the modification of epoxy resin forms a special micro-composite structure with bisphenol A epoxy resin as the main body and nano boron fiber and 2-phenoxyethyl acrylate as the carrier, forming nanometer calcium silicate. a dense body in which a special crystalline structure of 2-phenoxyethyl acrylate, nano boron silicate fiber and bisphenol A type epoxy resin is cross-linked with each other, which can well block the penetration of ultraviolet light and has excellent High temperature and light aging resistance.
- 1 is a package obtained by the ultraviolet LED packaging method provided by the present invention, wherein 1 is an ultraviolet LED chip, 2 is a substrate, 3 is a boss, 31 is a stepped support surface, 4 is a quartz lens, and 5 is an ultraviolet LED chip. Space.
- This embodiment provides an ultraviolet LED packaging method, including the following steps:
- Step 1 the ultraviolet LED chip is fixed on the substrate containing the printed circuit layer, the substrate is provided with a continuous boss around the substrate, and the upper surface of the boss is provided with a stepped support surface for placing the quartz lens;
- Step 2 using a gold wire to connect the chip to the substrate electrode
- Step 3 applying an adhesive to the stepped support surface
- Step 4 placing a quartz lens on the stepped support surface, applying an adhesive on the gap between the quartz lens and the stepped support surface to obtain an LED semi-finished product;
- step 5 the LED semi-finished product is bonded and fixed by reflow soldering to obtain a finished LED product.
- the ultraviolet LED chip is a vertical LED chip.
- 1 is a package structure obtained by the above packaging method, in which a substrate 2 and a surrounding boss 3 surround a space, the ultraviolet LED chip 1 is disposed on the substrate 2 inside the space, and the upper surface of the boss 3 is provided with a stepped support surface. 31.
- the quartz lens 4 is placed on the stepped support surface 31.
- the quartz lens 4 is a solid quartz lens. In the space 5 around the ultraviolet LED chip surrounded by the substrate 2, the boss 3, and the quartz lens 4, It is also possible to fill the gas with a vacuum.
- the present invention also provides an adhesive for packaging, which is prepared from the following components by weight: double 50-60 parts of phenol A type epoxy resin, 0.5-1 part of trimethylbenzoyl-diphenylphosphine oxide, 1-3 parts of polyoxyethylene ether, 2-5 parts of 2-phenoxyethyl acrylate , 0.1-0.3 parts of cumene hydroperoxide, 2-4 parts of zinc oxide, 0.3-0.6 parts of sodium borohydride, 1-2 parts of calcium silicate, 1-2 parts of nano boron fiber, dibutyldithioamino 1-2 parts of zinc formate and 1-4 parts of polyborosiloxane.
- both zinc oxide and calcium silicate are on the nanometer scale.
- the above adhesive preparation method is as follows:
- 2-phenoxyethyl acrylate, calcium silicate, nano boron fiber and bisphenol A epoxy resin are uniformly mixed in the reaction kettle, and then heated to 120-degree under vacuum degree of 0.04-0.06 MPa. 130 ° C, hold for 200-300 minutes, then add polyborosiloxane, continue to hold for 30-50 minutes, to obtain a modified epoxy resin;
- Step two the polyoxyethylene ether, hydroxy cumene peroxide, zinc oxide, zinc dibutyl dithiocarbamate and the modified epoxy resin are uniformly mixed, and the temperature is raised to 70-80 ° C under the protection of inert gas. After maintaining for 50-60 minutes, trimethylbenzoyl-diphenylphosphine oxide and sodium borohydride are added, and the temperature is raised to 90-95 ° C for 20-30 minutes to obtain a binder.
- the ultraviolet LED encapsulation method provided by the present invention was carried out using the adhesive obtained in the above test examples, and the properties of the adhesive were tested. The results were as follows:
- the adhesive provided by the invention has good ultraviolet aging resistance and heat resistance, and the luminous power attenuation rate is 0.3% or less after the LED is operated for 100 hours, and the attenuation rate is 2.3% or less after 500 hours of operation.
- the commonly used ordinary adhesives generally have a decay rate of more than 5% after 100 hours of operation.
- the modification of the bisphenol A type epoxy resin in the preparation step 1 of the adhesive provided by the present invention is the key to the stable high temperature and light aging resistance of the adhesive provided by the present invention.
- the bisphenol A epoxy resin is mainly composed of nano boron fiber and 2-phenoxyethyl group.
- Acrylate is a special carrier structure of "carrier", which forms a special crystalline structure of calcium nanosilicate silicate, 2-phenoxyethyl acrylate, nano boron fiber and bisphenol A epoxy resin.
- the ultraviolet LED packaging method uses a specific adhesive to improve material resistance and improve the service life of the LED lamp after packaging.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Led Device Packages (AREA)
- Epoxy Resins (AREA)
Abstract
An ultraviolet LED packaging method comprises: fixing an ultraviolet LED chip (1) to a substrate (2) comprising a printed circuit layer, continuous protruding members (3) being provided around the substrate, a stepped supporting face (31) being arranged at an upper surface of the protruding member for placement of a quartz lens (4); using a gold wire to connect the chip with a substrate electrode; applying an adhesive to the stepped supporting face; placing the quartz lens at the stepped supporting face, and applying an adhesive to a gap between the quartz lens and the stepped supporting face to obtain a semi-finished LED; and adhering and fixing the semi-finished LED by means of reflow soldering to obtain a finished LED product. The packaging method adopts a specific packaging adhesive. The packaging adhesive has favorable high temperature and ultraviolet aging resistance, thereby extending service life of an LED lamp.
Description
本发明属于LED封装领域，具体涉及一种紫外LED封装方法。The invention belongs to the field of LED packaging, and in particular relates to an ultraviolet LED packaging method.
半导体照明作为新一代的照明技术，具有很多优点：节能、环保、长寿命、响应快等，近年来发展非常迅速。As a new generation of lighting technology, semiconductor lighting has many advantages: energy saving, environmental protection, long life, fast response, etc., which has developed very rapidly in recent years.
紫外LED具体积小、寿命长和效率高等优点,具有广泛的应用前景。目前紫外LED的发光功率较低,除了芯片制作水平的提高外,封装技术对LED的特性也有重要的影响。目前,紫外LED主要有环氧树脂封装和金属与玻璃透镜封装。前者主要应用于400nm左右的近紫外LED,但紫外光对材料的老化影响较大。后者主要应用于波长小于380nm的紫外LED,封装材料是LED封装技术的另一个重要方面。LED封装材料主要有玻璃透镜、环氧树脂和硅树脂等。石英玻璃软化点温度为1600℃,热加工温度为1700～2000℃,从工艺的角度,石英玻璃不适合用来密封LED芯片；环氧树脂高温耐热性能一般,耐紫外光性能较差出光效率低，使用硅胶或者环氧树脂之类的有机材质，在受到高温时会有黄化等衰老状况。Ultraviolet LED has the advantages of small specific product, long life and high efficiency, and has broad application prospects. At present, the luminous power of the ultraviolet LED is relatively low, and in addition to the improvement in the level of chip fabrication, the packaging technology also has an important influence on the characteristics of the LED. Currently, UV LEDs are mainly available in epoxy and metal and glass lens packages. The former is mainly applied to near-ultraviolet LEDs of around 400 nm, but ultraviolet light has a great influence on the aging of materials. The latter is mainly used for UV LEDs with wavelengths less than 380 nm. Packaging materials are another important aspect of LED packaging technology. LED packaging materials mainly include glass lenses, epoxy resins and silicone resins. Quartz glass softening point temperature is 1600 ° C, hot processing temperature is 1700 ~ 2000 ° C, from the process point of view, quartz glass is not suitable for sealing LED chips; epoxy resin high temperature heat resistance, UV resistance, poor light output efficiency Low, using organic materials such as silicone or epoxy resin, it will have aging and other aging conditions when exposed to high temperatures.
发明内容Summary of the invention
本发明的目的在于为了克服以上现有技术的不足而提供一种紫外LED封装方法，封装采用特定的粘合剂，提高了LED使用寿命。The object of the present invention is to provide an ultraviolet LED packaging method for overcoming the above deficiencies of the prior art, which uses a specific adhesive to improve the service life of the LED.
本发明的技术方案如下：The technical solution of the present invention is as follows:
一种紫外LED封装方法，包括以下步骤：An ultraviolet LED packaging method includes the following steps:
步骤1，将紫外LED芯片固定于含有印刷电路层的基板上，基板四周设置有连续凸台，凸台上表面设置有用于放置石英透镜的台阶式支撑面； Step 1, the ultraviolet LED chip is fixed on the substrate containing the printed circuit layer, the substrate is provided with a continuous boss around the substrate, and the upper surface of the boss is provided with a stepped support surface for placing the quartz lens;
步骤2，使用金线将芯片与基板电极连接；Step 2, using a gold wire to connect the chip to the substrate electrode;
步骤3，将粘合剂涂抹在台阶式支撑面上； Step 3, applying an adhesive to the stepped support surface;
步骤4，将石英透镜放置于台阶式支撑面上，在石英透镜与台阶式支撑面的相接触的间隙上涂抹粘合剂，得到LED半成品； Step 4, placing a quartz lens on the stepped support surface, applying an adhesive on the gap between the quartz lens and the stepped support surface to obtain an LED semi-finished product;
步骤5，将LED半成品通过回流焊进行粘结固定，得到LED成品。In step 5, the LED semi-finished product is bonded and fixed by reflow soldering to obtain a finished LED product.
进一步地，所述的紫外LED封装方法，步骤1中紫外LED芯片为垂直型。Further, in the ultraviolet LED packaging method, the ultraviolet LED chip in the step 1 is vertical.
进一步地，所述的紫外LED封装方法，步骤3中的粘合剂为由以下重量份计的组分制备而成：双酚A型环氧树脂50-60份，三甲基苯甲酰基-二苯基氧化膦0.5-1份，聚氧乙烯醚1-3份，2-苯氧基乙基丙烯酸酯2-5份，过氧化羟基异丙苯0.1-0.3份，氧化锌2-4份，硼氢化钠0.3-0.6份，硅酸钙1-2份，纳米硼纤维1-2份，二丁基二硫代氨基甲酸锌1-2份，聚硼硅氧烷1-4份。Further, in the ultraviolet LED encapsulation method, the binder in the step 3 is prepared from the following components by weight: 50-60 parts of bisphenol A type epoxy resin, trimethylbenzoyl group- 0.5-1 part of diphenylphosphine oxide, 1-3 parts of polyoxyethylene ether, 2-5 parts of 2-phenoxyethyl acrylate, 0.1-0.3 parts of hydroxyisopropyl benzoate, 2-4 parts of zinc oxide , sodium borohydride 0.3-0.6 parts, 1-2 parts of calcium silicate, 1-2 parts of nano boron fiber, 1-2 parts of zinc dibutyl dithiocarbamate, 1-4 parts of polyborosiloxane.
更进一步地，所述的紫外LED封装方法，粘合剂组分中氧化锌和硅酸钙均为纳米级别。Further, in the ultraviolet LED packaging method, zinc oxide and calcium silicate in the adhesive component are both nanometer grade.
更进一步地，所述的紫外LED封装方法，粘合剂的制备方法如下：
Further, in the ultraviolet LED packaging method, the preparation method of the adhesive is as follows:
步骤一，将2-苯氧基乙基丙烯酸酯，硅酸钙，纳米硼纤维和双酚A型环氧树脂于反应釜中混合均匀，然后在真空条件下升温至120-130℃，保持200-300分钟，然后加入聚硼硅氧烷，继续保持30-50分钟，得到改性环氧树脂；Step one, mixing 2-phenoxyethyl acrylate, calcium silicate, nano boron fiber and bisphenol A epoxy resin in the reaction kettle, and then heating to 120-130 ° C under vacuum, maintaining 200 -300 minutes, then adding polyborosiloxane, and maintaining for 30-50 minutes to obtain a modified epoxy resin;
步骤二，将聚氧乙烯醚，过氧化羟基异丙苯，氧化锌，二丁基二硫代氨基甲酸锌和改性环氧树脂混合均匀，在惰性气体保护条件下升温至70-80℃，保持50-60分钟，然后加入三甲基苯甲酰基-二苯基氧化膦和硼氢化钠，升温至90-95℃，保持20-30分钟，得到粘合剂。Step two, the polyoxyethylene ether, hydroxy cumene peroxide, zinc oxide, zinc dibutyl dithiocarbamate and the modified epoxy resin are uniformly mixed, and the temperature is raised to 70-80 ° C under the protection of inert gas. After maintaining for 50-60 minutes, trimethylbenzoyl-diphenylphosphine oxide and sodium borohydride are added, and the temperature is raised to 90-95 ° C for 20-30 minutes to obtain a binder.
更进一步地，所述的紫外LED封装方法，粘合剂制备方法步骤一中真空度为0.04-0.06MPa。Further, in the ultraviolet LED packaging method, the vacuum degree in the first step of the binder preparation method is 0.04-0.06 MPa.
进一步地，所述的紫外LED封装方法，步骤4中石英透镜为实心式石英透镜。Further, in the ultraviolet LED packaging method, the quartz lens in step 4 is a solid quartz lens.
进一步地，所述的紫外LED封装方法，步骤4中将石英透镜放置于台阶式支撑面上后，紫外LED芯片周围的空间抽真空或填充气体。Further, in the ultraviolet LED packaging method, after the quartz lens is placed on the stepped support surface in step 4, the space around the ultraviolet LED chip is evacuated or filled with gas.
本发明提供的粘合剂具有良好的耐紫外老化和耐热性，在LED工作100h后发光功率衰减率为0.3％以下，工作500h后衰减率为2.3％以下，而目前常用的普通粘合剂工作100h后衰减率一般在5％以上。The adhesive provided by the invention has good ultraviolet aging resistance and heat resistance, and the luminous power attenuation rate is less than 0.3% after the LED is operated for 100 hours, and the attenuation rate is 2.3% or less after 500 hours of operation, and the common adhesives currently used. The decay rate is generally above 5% after 100 hours of operation.
本发明提供的粘合剂对于制备步骤一中双酚A型环氧树脂的改性是本发明提供的粘合剂发挥稳定的耐高温耐光老化性能的关键，通过步骤一中对双酚A型环氧树脂的改性，形成了以双酚A型环氧树脂为主体，以纳米硼纤维和2-苯氧基乙基丙烯酸酯为“载体”的特殊微观复合结构，形成了纳米硅酸钙、2-苯氧基乙基丙烯酸酯、纳米硼纤维和双酚A型环氧树脂的特殊晶态结构相互复合交联的致密体，其能够很好地阻挡紫外光的穿透，同时具有优良的耐高温耐光老化性能。The modification provided by the present invention for the modification of the bisphenol A type epoxy resin in the preparation step 1 is the key to the stable high temperature and light aging resistance of the adhesive provided by the present invention, and the bisphenol A type is obtained in the first step. The modification of epoxy resin forms a special micro-composite structure with bisphenol A epoxy resin as the main body and nano boron fiber and 2-phenoxyethyl acrylate as the carrier, forming nanometer calcium silicate. a dense body in which a special crystalline structure of 2-phenoxyethyl acrylate, nano boron silicate fiber and bisphenol A type epoxy resin is cross-linked with each other, which can well block the penetration of ultraviolet light and has excellent High temperature and light aging resistance.
图1为本发明提供的紫外LED封装方法得到的封装件，其中1为紫外LED芯片，2为基板，3为凸台，31为台阶式支撑面，4为石英透镜，5为紫外LED芯片周围的空间。1 is a package obtained by the ultraviolet LED packaging method provided by the present invention, wherein 1 is an ultraviolet LED chip, 2 is a substrate, 3 is a boss, 31 is a stepped support surface, 4 is a quartz lens, and 5 is an ultraviolet LED chip. Space.
实施例1Example 1
本实施例提供一种紫外LED封装方法，包括以下步骤：This embodiment provides an ultraviolet LED packaging method, including the following steps:
步骤1，将紫外LED芯片固定于含有印刷电路层的基板上，基板四周设置有连续凸台，凸台上表面设置有用于放置石英透镜的台阶式支撑面； Step 1, the ultraviolet LED chip is fixed on the substrate containing the printed circuit layer, the substrate is provided with a continuous boss around the substrate, and the upper surface of the boss is provided with a stepped support surface for placing the quartz lens;
步骤2，使用金线将芯片与基板电极连接；Step 2, using a gold wire to connect the chip to the substrate electrode;
步骤3，将粘合剂涂抹在台阶式支撑面上； Step 3, applying an adhesive to the stepped support surface;
步骤4，将石英透镜放置于台阶式支撑面上，在石英透镜与台阶式支撑面的相接触的间隙上涂抹粘合剂，得到LED半成品； Step 4, placing a quartz lens on the stepped support surface, applying an adhesive on the gap between the quartz lens and the stepped support surface to obtain an LED semi-finished product;
步骤5，将LED半成品通过回流焊进行粘结固定，得到LED成品。In step 5, the LED semi-finished product is bonded and fixed by reflow soldering to obtain a finished LED product.
以上封装方法中，紫外LED芯片为垂直型LED芯片。图1为以上封装方法得到的封装结构，其中由基板2和四周的凸台3围成一个空间，紫外LED芯片1设置于空间内部的基板2上，凸台3上表面设置有台阶式支撑面31，石英透镜4放置于台阶式支撑面31上。该石英透镜4为实心式石英透镜。在由基板2、凸台3和石英透镜4围成的紫外LED芯片周围的空间5中，可
以抽成真空，也可以填充气体。In the above packaging method, the ultraviolet LED chip is a vertical LED chip. 1 is a package structure obtained by the above packaging method, in which a substrate 2 and a surrounding boss 3 surround a space, the ultraviolet LED chip 1 is disposed on the substrate 2 inside the space, and the upper surface of the boss 3 is provided with a stepped support surface. 31. The quartz lens 4 is placed on the stepped support surface 31. The quartz lens 4 is a solid quartz lens. In the space 5 around the ultraviolet LED chip surrounded by the substrate 2, the boss 3, and the quartz lens 4,
It is also possible to fill the gas with a vacuum.
实施例2Example 2
为了解决现有的常用紫外LED封装胶黏剂耐高温与耐老化性差的问题，本发明还提供了一种用于封装的粘合剂，其由以下重量份计的组分制备而成：双酚A型环氧树脂50-60份，三甲基苯甲酰基-二苯基氧化膦0.5-1份，聚氧乙烯醚1-3份，2-苯氧基乙基丙烯酸酯2-5份，过氧化羟基异丙苯0.1-0.3份，氧化锌2-4份，硼氢化钠0.3-0.6份，硅酸钙1-2份，纳米硼纤维1-2份，二丁基二硫代氨基甲酸锌1-2份，聚硼硅氧烷1-4份。In order to solve the problem that the conventional ultraviolet LED package adhesive has poor high temperature resistance and aging resistance, the present invention also provides an adhesive for packaging, which is prepared from the following components by weight: double 50-60 parts of phenol A type epoxy resin, 0.5-1 part of trimethylbenzoyl-diphenylphosphine oxide, 1-3 parts of polyoxyethylene ether, 2-5 parts of 2-phenoxyethyl acrylate , 0.1-0.3 parts of cumene hydroperoxide, 2-4 parts of zinc oxide, 0.3-0.6 parts of sodium borohydride, 1-2 parts of calcium silicate, 1-2 parts of nano boron fiber, dibutyldithioamino 1-2 parts of zinc formate and 1-4 parts of polyborosiloxane.
以上组分中，氧化锌和硅酸钙均为纳米级别。Among the above components, both zinc oxide and calcium silicate are on the nanometer scale.
以上粘合剂制备方法如下：The above adhesive preparation method is as follows:
步骤一，将2-苯氧基乙基丙烯酸酯，硅酸钙，纳米硼纤维和双酚A型环氧树脂于反应釜中混合均匀，然后在真空度为0.04-0.06MPa下升温至120-130℃，保持200-300分钟，然后加入聚硼硅氧烷，继续保持30-50分钟，得到改性环氧树脂；In the first step, 2-phenoxyethyl acrylate, calcium silicate, nano boron fiber and bisphenol A epoxy resin are uniformly mixed in the reaction kettle, and then heated to 120-degree under vacuum degree of 0.04-0.06 MPa. 130 ° C, hold for 200-300 minutes, then add polyborosiloxane, continue to hold for 30-50 minutes, to obtain a modified epoxy resin;
步骤二，将聚氧乙烯醚，过氧化羟基异丙苯，氧化锌，二丁基二硫代氨基甲酸锌和改性环氧树脂混合均匀，在惰性气体保护条件下升温至70-80℃，保持50-60分钟，然后加入三甲基苯甲酰基-二苯基氧化膦和硼氢化钠，升温至90-95℃，保持20-30分钟，得到粘合剂。Step two, the polyoxyethylene ether, hydroxy cumene peroxide, zinc oxide, zinc dibutyl dithiocarbamate and the modified epoxy resin are uniformly mixed, and the temperature is raised to 70-80 ° C under the protection of inert gas. After maintaining for 50-60 minutes, trimethylbenzoyl-diphenylphosphine oxide and sodium borohydride are added, and the temperature is raised to 90-95 ° C for 20-30 minutes to obtain a binder.
对于以上粘合剂的组分选择，进行了如下实验：For the component selection of the above adhesives, the following experiment was carried out:
| 项目project | 试验例1Test example 1 | 试验例2Test example 2 | 试验例3Test Example 3 | 试验例4Test Example 4 |
使用以上试验例得到的粘合剂进行本发明提供的紫外LED封装方法，并对粘合剂的性能进行测试，结果如下：
The ultraviolet LED encapsulation method provided by the present invention was carried out using the adhesive obtained in the above test examples, and the properties of the adhesive were tested. The results were as follows:
从以上结果可以看出，本发明提供的粘合剂具有良好的耐紫外老化和耐热性，在LED工作100h后发光功率衰减率为0.3％以下，工作500h后衰减率为2.3％以下，而目前常用的普通粘合剂工作100h后衰减率一般在5％以上。It can be seen from the above results that the adhesive provided by the invention has good ultraviolet aging resistance and heat resistance, and the luminous power attenuation rate is 0.3% or less after the LED is operated for 100 hours, and the attenuation rate is 2.3% or less after 500 hours of operation. At present, the commonly used ordinary adhesives generally have a decay rate of more than 5% after 100 hours of operation.
为了说明以上提供的粘合剂的性能，本发明在研究过程中进行了一系列对照试验，以下选取部分进行说明：To illustrate the performance of the adhesives provided above, the present invention conducted a series of controlled trials during the course of the study, the following sections of which are illustrated:
从以上结果可以看出，本发明提供的粘合剂对于制备步骤一中双酚A型环氧树脂的改性是本发明提供的粘合剂发挥稳定的耐高温耐光老化性能的关键，通过步骤一中对双酚A型环氧树脂的改性，形成了以双酚A型环氧树脂为主体，以纳米硼纤维和2-苯氧基乙基
丙烯酸酯为“载体”的特殊微观复合结构，形成了纳米硅酸钙、2-苯氧基乙基丙烯酸酯、纳米硼纤维和双酚A型环氧树脂的特殊晶态结构相互复合交联的致密体，其能够很好地阻挡紫外光的穿透，同时具有优良的耐高温耐光老化性能。It can be seen from the above results that the modification of the bisphenol A type epoxy resin in the preparation step 1 of the adhesive provided by the present invention is the key to the stable high temperature and light aging resistance of the adhesive provided by the present invention. In the modification of bisphenol A epoxy resin, the bisphenol A epoxy resin is mainly composed of nano boron fiber and 2-phenoxyethyl group.
Acrylate is a special carrier structure of "carrier", which forms a special crystalline structure of calcium nanosilicate silicate, 2-phenoxyethyl acrylate, nano boron fiber and bisphenol A epoxy resin. A dense body that can block the penetration of ultraviolet light and has excellent high temperature and light aging resistance.
综上所述，本发明提供的紫外LED封装方法，采用了特定的粘合剂，提升了材料耐受性，提高了封装后LED灯的使用寿命。
In summary, the ultraviolet LED packaging method provided by the present invention uses a specific adhesive to improve material resistance and improve the service life of the LED lamp after packaging.
Claims (8)
- 一种紫外LED封装方法，其特征在于，包括以下步骤：An ultraviolet LED packaging method, comprising the steps of:步骤1，将紫外LED芯片固定于含有印刷电路层的基板上，基板四周设置有连续凸台，凸台上表面设置有用于放置石英透镜的台阶式支撑面；Step 1, the ultraviolet LED chip is fixed on the substrate containing the printed circuit layer, the substrate is provided with a continuous boss around the substrate, and the upper surface of the boss is provided with a stepped support surface for placing the quartz lens;步骤2，使用金线将芯片与基板电极连接；Step 2, using a gold wire to connect the chip to the substrate electrode;步骤3，将粘合剂涂抹在台阶式支撑面上；Step 3, applying an adhesive to the stepped support surface;步骤4，将石英透镜放置于台阶式支撑面上，在石英透镜与台阶式支撑面的相接触的间隙上涂抹粘合剂，得到LED半成品；Step 4, placing a quartz lens on the stepped support surface, applying an adhesive on the gap between the quartz lens and the stepped support surface to obtain an LED semi-finished product;步骤5，将LED半成品通过回流焊进行粘结固定，得到LED成品。In step 5, the LED semi-finished product is bonded and fixed by reflow soldering to obtain a finished LED product.
- 根据权利要求1所述的紫外LED封装方法，其特征在于，步骤1中紫外LED芯片为垂直型。The ultraviolet LED packaging method according to claim 1, wherein the ultraviolet LED chip in the step 1 is vertical.
- 根据权利要求1所述的紫外LED封装方法，其特征在于，步骤3中的粘合剂为由以下重量份计的组分制备而成：双酚A型环氧树脂50-60份，三甲基苯甲酰基-二苯基氧化膦0.5-1份，聚氧乙烯醚1-3份，2-苯氧基乙基丙烯酸酯2-5份，过氧化羟基异丙苯0.1-0.3份，氧化锌2-4份，硼氢化钠0.3-0.6份，硅酸钙1-2份，纳米硼纤维2-3份，二丁基二硫代氨基甲酸锌1-2份，聚硼硅氧烷1-4份。The ultraviolet LED packaging method according to claim 1, wherein the binder in the step 3 is prepared from the following components by weight: bisphenol A type epoxy resin 50-60 parts, top three 0.5-1 part of benzoyl-diphenylphosphine oxide, 1-3 parts of polyoxyethylene ether, 2-5 parts of 2-phenoxyethyl acrylate, 0.1-0.3 parts of hydroxyisopropyl benzene peroxide, oxidation 2-4 parts of zinc, 0.3-0.6 parts of sodium borohydride, 1-2 parts of calcium silicate, 2-3 parts of nano boron fiber, 1-2 parts of zinc dibutyl dithiocarbamate, polyborosiloxane 1 -4 parts.
- 根据权利要求3所述的紫外LED封装方法，其特征在于，粘合剂组分中氧化锌和硅酸钙均为纳米级别。The ultraviolet LED encapsulation method according to claim 3, wherein both the zinc oxide and the calcium silicate in the binder component are on the order of nanometers.
- 根据权利要求3所述的紫外LED封装方法，其特征在于，粘合剂的制备方法如下：The ultraviolet LED packaging method according to claim 3, wherein the adhesive is prepared as follows:步骤一，将2-苯氧基乙基丙烯酸酯，硅酸钙，纳米硼纤维和双酚A型环氧树脂于反应釜中混合均匀，然后在真空条件下升温至120-130℃，保持200-300分钟，然后加入聚硼硅氧烷，继续保持30-50分钟，得到改性环氧树脂；Step one, mixing 2-phenoxyethyl acrylate, calcium silicate, nano boron fiber and bisphenol A epoxy resin in the reaction kettle, and then heating to 120-130 ° C under vacuum, maintaining 200 -300 minutes, then adding polyborosiloxane, and maintaining for 30-50 minutes to obtain a modified epoxy resin;步骤二，将聚氧乙烯醚，过氧化羟基异丙苯，氧化锌，二丁基二硫代氨基甲酸锌和改性环氧树脂混合均匀，在惰性气体保护条件下升温至70-80℃，保持50-60分钟，然后加入三甲基苯甲酰基-二苯基氧化膦和硼氢化钠，升温至90-95℃，保持20-30分钟，得到粘合剂。Step two, the polyoxyethylene ether, hydroxy cumene peroxide, zinc oxide, zinc dibutyl dithiocarbamate and the modified epoxy resin are uniformly mixed, and the temperature is raised to 70-80 ° C under the protection of inert gas. After maintaining for 50-60 minutes, trimethylbenzoyl-diphenylphosphine oxide and sodium borohydride are added, and the temperature is raised to 90-95 ° C for 20-30 minutes to obtain a binder.
- 根据权利要求5所述的紫外LED封装方法，其特征在于，粘合剂制备方法步骤一中真空度为0.04-0.06MPa。The ultraviolet LED packaging method according to claim 5, wherein the vacuum degree in the first step of the binder preparation method is 0.04-0.06 MPa.
- 根据权利要求1所述的紫外LED封装方法，其特征在于，步骤4中石英透镜为实心式石英透镜。The ultraviolet LED packaging method according to claim 1, wherein the quartz lens in step 4 is a solid quartz lens.
- 根据权利要求1所述的紫外LED封装方法，其特征在于，步骤4中将石英透镜放置于台阶式支撑面上后，紫外LED芯片周围的空间抽真空或填充气体。 The ultraviolet LED packaging method according to claim 1, wherein after the quartz lens is placed on the stepped support surface in step 4, the space around the ultraviolet LED chip is evacuated or filled with gas.
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| CN106684227A (en) | 2017-05-17 |
| CN106684227B (en) | 2018-05-11 |
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