CN204011471U - A kind of deep ultraviolet LED device encapsulation structure - Google Patents

A kind of deep ultraviolet LED device encapsulation structure Download PDF

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Publication number
CN204011471U
CN204011471U CN201420396320.9U CN201420396320U CN204011471U CN 204011471 U CN204011471 U CN 204011471U CN 201420396320 U CN201420396320 U CN 201420396320U CN 204011471 U CN204011471 U CN 204011471U
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CN
China
Prior art keywords
deep ultraviolet
ceramics bracket
quartz lens
encapsulation
ultraviolet led
Prior art date
Application number
CN201420396320.9U
Other languages
Chinese (zh)
Inventor
闫国松
段君芃
李涛
杨飞
鱼武鹏
范杨广
Original Assignee
陕西光电科技有限公司
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Application filed by 陕西光电科技有限公司 filed Critical 陕西光电科技有限公司
Priority to CN201420396320.9U priority Critical patent/CN204011471U/en
Application granted granted Critical
Publication of CN204011471U publication Critical patent/CN204011471U/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

The utility model discloses a kind of deep ultraviolet LED device encapsulation structure, comprise ceramics bracket, and be located at the deep ultraviolet chip on ceramics bracket base die bond position, deep ultraviolet chip is connected to positive and negative electrode by silver-colored line; On described ceramics bracket, be bonded with quartz lens by adhesives, between quartz lens and ceramics bracket base, be filled with protective gas layer.After lens and ceramics bracket sealing-in, form airtight chip guard space, the protective gas of filling has been avoided oxygen and the corrosion of steam to deep ultraviolet chip, has extended the life-span of device; In addition the good heat dispersion of ceramics bracket, the conduction of the heat that produces while having accelerated chip operation, has improved the working life of device, and adopts the packaging of SMD pattern support to be applicable to pipelining, has improved production efficiency.

Description

A kind of deep ultraviolet LED device encapsulation structure

Technical field

The utility model relates to a kind of encapsulating structure of deep ultraviolet LED device, and realizes the special construction of ceramics bracket that this structure adopts and the special construction of quartz glass lens, and realizes the feature of protective gas that this structure is used and binding agent.

Background technology

Because the wavelength of deep ultraviolet LED is shorter, energy is very strong, causes material property deteriorated serious, so require harsh to encapsulation technology and encapsulating material.Deep ultraviolet LED encapsulating products in the market is mainly encapsulated as master so that the TO with glass lens is solid, although its life-span is longer, compared with SMD type LED lamp pearl, shortcoming is to be not suitable for carrying out mass, pipelining in application end; And the deep ultraviolet lamp pearl of traditional SMD type and imitative lumen type, because chip surface and gold thread do not have protective layer, the life-span of lamp pearl is shorter, and practical application inconvenience, is easy to cause chip damage and gold thread to rupture.

Utility model content

In order to address the above problem; the utility model provides a kind of novel deep ultraviolet LED device encapsulation structure; this technical optimization has been improved the encapsulation technology of deep ultraviolet LED device; the quartz lens of special construction carries out sealing-in by special binder material with the special ceramics support matching in specific protective atmosphere; the protective gas that forms airtight chip guard space and filling has completely cut off steam and the corrosion of oxygen to deep ultraviolet chip; extended the working life of device, and SMD encapsulation pattern is applicable to the pipelining of mass.

The technical scheme that the utility model adopts is as follows:

A kind of deep ultraviolet LED device encapsulation structure that the utility model embodiment provides, comprises ceramics bracket, and is located at the deep ultraviolet chip on ceramics bracket base die bond position, deep ultraviolet chip is connected to positive and negative electrode by silver-colored line; On described ceramics bracket, be bonded with quartz lens by adhesives, between quartz lens and ceramics bracket base, be filled with protective gas layer.

Preferably, described ceramics bracket comprises support cup wall and bracket base, and the bowl cup cavity being surrounded by described support cup wall is located on bracket base, and described support cup wall is provided with rack groove, and rack groove inner side is provided with quartz lens limiting stand.

Preferably, the external diameter of described rack groove is identical with the external diameter of quartz lens, and the internal diameter of described rack groove is identical with the internal diameter of quartz lens, and the degree of depth of described rack groove is identical with the periphery boss degree of depth of quartz lens.

Preferably, described quartz lens bottom inside is provided with outer frustum, and the tapering of outer frustum is identical with the tapering of described rack groove inner side.

Preferably, described protective gas layer is nitrogen or the argon gas inert gas that can tolerate deep ultraviolet radiation.

Preferably, described layer of adhesive material is dimethyl silicone polymer or SiO 2it is the binding agent of main material.

Special ceramics bracket has been processed in the utility model design, the quartz glass lens that design processing is corresponding with described ceramics bracket.In the glove box of specific protective gas, ceramics bracket and quartz lens after adopting special binder material to die bond bond, because form airtight chip guard space after lens and ceramics bracket sealing-in, the protective gas of filling has been avoided oxygen and the corrosion of steam to deep ultraviolet chip, has extended the life-span of device; In addition the good heat dispersion of ceramics bracket, the conduction of the heat that produces while having accelerated chip operation, has improved the working life of device, and adopts the packaging of SMD pattern support to be applicable to pipelining, has improved production efficiency.

Brief description of the drawings

Accompanying drawing described herein is used to provide further understanding of the present utility model, and it forms the application's a part, but does not form improper restriction of the present utility model.In the accompanying drawings:

Fig. 1 is encapsulating structure schematic diagram of the present utility model.

Fig. 2 is special ceramics supporting structure schematic diagram of the present utility model.

Fig. 3 is that special ceramics support concrete structure size of the present utility model limits schematic diagram.

Fig. 4 is special quartz glass lens arrangement schematic diagram of the present utility model.

Fig. 5 is special quartz glass lens sizes limiting structure schematic diagram of the present utility model.

In figure: 1-ceramics bracket; 2-quartz lens; 3-inert gas; 4-bonding agent; 5-deep ultraviolet chip; 6-lead-in wire; 101-support cup wall; 2-rack groove; 103-support lead plate; 104-deep ultraviolet chip base; 105-quartz lens limiting stand; 106-bracket base.

Embodiment

Describe the utility model in detail below in conjunction with accompanying drawing and specific embodiment, be used for explaining the utility model in this illustrative examples of the present utility model and explanation, but not as to restriction of the present utility model.

As shown in Figure 1, a kind of deep ultraviolet LED device encapsulation structure, comprises ceramics bracket 1, and is located at the deep ultraviolet chip 5 on ceramics bracket 1 base die bond position, and deep ultraviolet chip 5 is connected to positive and negative electrode by silver-colored line 6; On ceramics bracket 1, be bonded with quartz lens 2 by adhesives 4, between quartz lens 2 and ceramics bracket 1 base, be filled with protective gas layer 3, protective gas layer 3 is for tolerating nitrogen or the argon gas inert gas of deep ultraviolet radiation.

As shown in Figure 2, ceramics bracket 1 comprises support cup wall 101 and bracket base 106, the bowl cup cavity being surrounded by described support cup wall 101 is located on bracket base 106, support cup wall 101 is provided with rack groove 102, rack groove 102 inner sides are provided with quartz lens limiting stand 105, and support lead plate 103 and deep ultraviolet chip base 104 are located at respectively on bowl cup cavity bottom surface.

As shown in Figure 3, the external diameter of rack groove 102 is identical with the external diameter of quartz lens 2, and the internal diameter of rack groove 102 is identical with the internal diameter of quartz lens 2, and the degree of depth of rack groove 102 is identical with the periphery boss degree of depth of quartz lens 2.

As shown in Figure 4,5, quartz lens 2 bottom inside are provided with outer frustum, and the tapering of outer frustum is identical with the tapering of described rack groove 102 inner sides.

The layer of adhesive material 4 using in this structure is dimethyl silicone polymer or SiO 2it is the binding agent of main material.The utility model adopts the quartz lens of special construction and the ceramics bracket matching to carry out sealing-in by special binder material in specific protective atmosphere.

Embodiment: design processing ceramics bracket as shown in Figure 3, the SMD pattern ceramics bracket design processing that support is special construction quartz glass lens as shown in Figure 5.In the glove box of high pure nitrogen atmosphere, adopt ceramics bracket and the quartz lens of OE6370M after to die bond to carry out sealing-in, then baking-curing in the hot-blast oven of high pure nitrogen atmosphere.Because form airtight chip guard space after lens and ceramics bracket sealing-in, the high pure nitrogen protective gas of filling, has avoided the corrosion to deep ultraviolet chip of oxygen and steam, has extended the life-span of device; In addition the good heat dispersion of ceramics bracket, the conduction of the heat that produces while having accelerated chip operation, has improved the working life of device, and adopts the packaging of SMD pattern support to be applicable to pipelining, has improved production efficiency.

Above content is in conjunction with concrete preferred implementation further detailed description of the utility model; can not assert that embodiment of the present utility model only limits to this; for the utility model person of an ordinary skill in the technical field; without departing from the concept of the premise utility; can also make some simple deduction or replace, all should be considered as belonging to the utility model and determine scope of patent protection by submitted to claims.

Claims (6)

1. a deep ultraviolet LED device encapsulation structure, it is characterized in that: comprise ceramics bracket (1), and being located at the deep ultraviolet chip (5) on ceramics bracket (1) base die bond position, deep ultraviolet chip (5) is connected to positive and negative electrode by silver-colored line (6); Described ceramics bracket (1) is upper is bonded with quartz lens (2) by adhesives (4), between quartz lens (2) and ceramics bracket (1) base, is filled with protective gas layer (3).
2. deep ultraviolet LED device encapsulation structure according to claim 1, it is characterized in that: described ceramics bracket (1) comprises support cup wall (101) and bracket base (106), the bowl cup cavity being surrounded by described support cup wall (101) is located on bracket base (106), described support cup wall (101) is provided with rack groove (102), and rack groove (102) inner side is provided with quartz lens limiting stand (105).
3. deep ultraviolet LED device encapsulation structure according to claim 2, it is characterized in that: the external diameter of described rack groove (102) is identical with the external diameter of quartz lens (2), the internal diameter of described rack groove (102) is identical with the internal diameter of quartz lens (2), and the degree of depth of described rack groove (102) is identical with the periphery boss degree of depth of quartz lens (2).
4. deep ultraviolet LED device encapsulation structure according to claim 2, is characterized in that: described quartz lens (2) bottom inside is provided with outer frustum, and the tapering of outer frustum is identical with the tapering of described rack groove (102) inner side.
5. deep ultraviolet LED device encapsulation structure according to claim 1, is characterized in that: described protective gas layer (3) is for tolerating nitrogen or the argon gas inert gas of deep ultraviolet radiation.
6. deep ultraviolet LED device encapsulation structure according to claim 1, is characterized in that: described layer of adhesive material (4) is dimethyl silicone polymer or SiO 2it is the binding agent of main material.
CN201420396320.9U 2014-07-17 2014-07-17 A kind of deep ultraviolet LED device encapsulation structure CN204011471U (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106299042A (en) * 2016-08-30 2017-01-04 江苏稳润光电有限公司 A kind of ultraviolet LED light source inorganic encapsulated method
CN106684227A (en) * 2016-12-30 2017-05-17 江苏稳润光电有限公司 Ultraviolet LED package method
CN106816202A (en) * 2017-02-15 2017-06-09 山东圣泉新材料股份有限公司 A kind of Graphene denatured conductive silver paste and preparation method thereof
CN108198930A (en) * 2017-12-29 2018-06-22 佛山市南海区联合广东新光源产业创新中心 One kind is easily installed fixed deep ultraviolet LED encapsulation structure
US10134963B2 (en) 2015-12-04 2018-11-20 Industrial Techology Research Institute Package structure of an ultraviolet light emitting diode
CN109103319A (en) * 2018-08-21 2018-12-28 华中科技大学鄂州工业技术研究院 A kind of deep ultraviolet LED encapsulation structure and its packaging method
CN109411587A (en) * 2018-12-10 2019-03-01 邱凡 A kind of purple LED production method and its purple LED containing silica-gel lens
CN109786535A (en) * 2018-12-17 2019-05-21 旭宇光电(深圳)股份有限公司 Deep-UV light-emitting device
CN110197865A (en) * 2019-05-14 2019-09-03 湖北深紫科技有限公司 A kind of deep ultraviolet LED packaging of liquid-packing and preparation method thereof

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10134963B2 (en) 2015-12-04 2018-11-20 Industrial Techology Research Institute Package structure of an ultraviolet light emitting diode
CN106299042A (en) * 2016-08-30 2017-01-04 江苏稳润光电有限公司 A kind of ultraviolet LED light source inorganic encapsulated method
CN106684227A (en) * 2016-12-30 2017-05-17 江苏稳润光电有限公司 Ultraviolet LED package method
CN106684227B (en) * 2016-12-30 2018-05-11 江苏稳润光电有限公司 A kind of ultraviolet LED method for packing
WO2018121103A1 (en) * 2016-12-30 2018-07-05 江苏稳润光电有限公司 Ultraviolet led packaging method
CN106816202A (en) * 2017-02-15 2017-06-09 山东圣泉新材料股份有限公司 A kind of Graphene denatured conductive silver paste and preparation method thereof
CN106816202B (en) * 2017-02-15 2018-12-04 山东圣泉新材料股份有限公司 A kind of graphene denatured conductive silver paste and preparation method thereof
CN108198930A (en) * 2017-12-29 2018-06-22 佛山市南海区联合广东新光源产业创新中心 One kind is easily installed fixed deep ultraviolet LED encapsulation structure
CN109103319A (en) * 2018-08-21 2018-12-28 华中科技大学鄂州工业技术研究院 A kind of deep ultraviolet LED encapsulation structure and its packaging method
CN109411587A (en) * 2018-12-10 2019-03-01 邱凡 A kind of purple LED production method and its purple LED containing silica-gel lens
CN109786535A (en) * 2018-12-17 2019-05-21 旭宇光电(深圳)股份有限公司 Deep-UV light-emitting device
CN110197865A (en) * 2019-05-14 2019-09-03 湖北深紫科技有限公司 A kind of deep ultraviolet LED packaging of liquid-packing and preparation method thereof

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20141210

Termination date: 20180717